Power module and applicable power supply device thereof

Abstract

The invention provides a power module and an applicable power supply device thereof. The power module includes a first MOSFET, a second MOSFET, a first source pin, a first drain pin, and a second drain pin. The first MOSFET includes a first drain and a first source. The second MOSFET includes a second drain and a second source. The second MOSFET and the first MOSFET are stacked. The first source and the second source are connected inside the power module. The first source electrode pin is connected with the first source electrode and the second source electrode. The first drain electrode pin is connected with the first drain electrode. The second drain electrode pin is connected with the second drain electrode.

Description

Technical Field

[0001] This invention relates to an electronic device structure, and more particularly to a power module for power conversion and a power supply device suitable therefor. Background Technology

[0002] The widespread adoption of artificial intelligence has spurred the rapid development of data servers, leading to a continuous increase in the demand for server computing power and a corresponding surge in the current requirements of their computing chips. This enormous current demand poses a significant challenge to the voltage regulators responsible for powering the chips.

[0003] Voltage regulators typically require characteristics such as low output voltage, high current, high load transient performance, and high efficiency. To meet the demands of high load current, the number of SR-MOSFETs (Synchronous Rectifier MOSFETs) in voltage regulators is continuously increasing. Therefore, the packaging method of SR-MOSFETs has a significant impact on the performance parameters of voltage regulators.

[0004] In traditional voltage regulators, a common approach is to use two independently packaged SR-MOSFETs (SR-A and SR-B). The sources of SR-A and SR-B are interconnected via the PCB's ground network. AC (Alternating Current) current flows from the winding into the drain of SR-A, through the die, and out from the source of SR-A. Subsequently, the AC current must pass through the PCB's ground network into the source of SR-B, through the die, and then out from the drain of SR-A back to the winding. This AC loop configuration passes through two horizontally aligned, independently packaged MOSFETs, resulting in an AC loop length greater than the combined width of the two MOSFET packages. This excessively long AC loop leads to increased leakage inductance and PCB losses, negatively impacting the voltage regulator's efficiency.

[0005] Another traditional approach is to combine two SR-MOSFETs into a single package and connect them in parallel. However, in this configuration, the gates of the two MOSFETs are merged to the same pin, which cannot meet the requirement of separate timing control for each MOSFET. Furthermore, the parallel connection of the drains of the two MOSFETs cannot meet the design requirement of winding wiring between the drains of the two MOSFETs to enclose the magnetic core.

[0006] Furthermore, in traditional voltage regulators, the secondary side typically uses multiple MOSFETs connected in parallel, with each MOSFET placed on opposite sides of the circuit board. To meet the high current requirements at the output, the drains to ground are connected to each other via vertical holes inside the circuit board to reduce interlayer lateral current. However, because the pins connecting the gate and source in traditional MOSFET packages are asymmetrically distributed, the parallel MOSFETs need to be connected via cross traces, increasing wiring complexity and production costs.

[0007] Therefore, it is necessary to provide a power module for power conversion and a suitable power supply device to address the deficiencies of the prior art. Summary of the Invention

[0008] The purpose of this invention is to provide a power module for power conversion. The sources of two MOSFETs are interconnected within the power module, allowing AC current to flow directly from the source of one MOSFET to the source of the other without passing through the circuit board's ground network. This effectively shortens the AC loop length, significantly reducing leakage inductance and PCB losses, and improving the efficiency of the voltage regulator. The two MOSFETs in the power module can be stacked to form a compact structure, significantly reducing the space occupied on the circuit board and increasing power density. The drains of the two MOSFETs can be independently connected to different drain pins to allow for winding arrangements between the two drains, meeting the design requirements of a surrounding magnetic core. The gates of the two MOSFETs can be independently connected to different gate pins, allowing for different control signals to be input, thus enabling independent control and flexible application of the two MOSFETs.

[0009] Another object of the present invention is to provide a power supply device suitable for power modules. The power supply device includes a circuit board. A source pad and a drain pad are provided on both a first surface and a second surface of the circuit board. The source pad and the drain pad are respectively used to connect the source pin and the drain pin of the power module. The source pad on the first surface is perpendicular to the source pad on the second surface, and the drain pad on the first surface is perpendicular to the drain pad on the second surface. With the aforementioned configuration, the power supply device can eliminate the need for cross traces, effectively reducing the complexity of wiring, and simultaneously reducing losses caused by interlayer lateral current.

[0010] To achieve the aforementioned objectives, the present invention provides a power module. The power module includes a first MOSFET, a second MOSFET, a first source pin, a first drain pin, and a second drain pin. The first MOSFET includes a first drain and a first source. The second MOSFET includes a second drain and a second source. The second MOSFET and the first MOSFET are stacked. The first source and the second source are connected internally within the power module. The first source pin is connected to both the first and second sources. The first drain pin is connected to the first drain. The second drain pin is connected to the second drain.

[0011] In one embodiment, AC current enters the first MOSFET from the first drain, passes through the first and second sources to enter the second MOSFET, and then flows out through the second drain.

[0012] In one embodiment, the first drain pin and the second drain pin are connected to the winding.

[0013] In one embodiment, the first source pin, the first drain pin, and the second drain pin are located on the same side of the power module.

[0014] In one embodiment, the power module further includes a first gate pin and a second gate pin. The first MOSFET includes a first gate, and the second MOSFET includes a second gate. The first gate pin is connected to the first gate, and the second gate pin is connected to the second gate. The first gate pin and the second gate pin each receive different control signals.

[0015] To achieve the aforementioned objectives, the present invention further provides a MOSFET assembly. The MOSFET assembly includes a first MOSFET, a second MOSFET, and a circuit board. The first MOSFET includes a first drain and a first source. The second MOSFET includes a second drain and a second source. The second MOSFET and the first MOSFET are stacked, and the second source is connected to the first source. The first MOSFET and the second MOSFET are embedded within the circuit board.

[0016] In one embodiment, AC current enters the first MOSFET from the first drain, passes through the first and second sources to enter the second MOSFET, and then flows out through the second drain.

[0017] In one embodiment, the first drain and the second drain are connected to the winding.

[0018] In one embodiment, the circuit board includes a first wiring layer, a second wiring layer, and a third wiring layer. A first drain is connected to the first wiring layer. A second drain is connected to the third wiring layer. A first source and a second source are connected to the second wiring layer. The second wiring layer is located between the first and third wiring layers.

[0019] In one embodiment, the first drain, the second drain, the first source, and the second source are respectively connected to corresponding pads on the surface of the circuit board.

[0020] In one embodiment, the first MOSFET includes a first gate, and the second MOSFET includes a second gate. The first gate and the second gate each receive different control signals.

[0021] To achieve the aforementioned objectives, the present invention further provides a power supply device. The power supply device includes a circuit board, a first power module, a second power module, a first source pad, a first drain pad, a second drain pad, a second source pad, a third drain pad, and a fourth drain pad. The circuit board includes a first surface and a second surface opposite to each other. The first power module is disposed on the first surface and includes a first MOSFET, a second MOSFET, a first source pin, a first drain pin, and a second drain pin. The first MOSFET includes a first drain and a first source. The second MOSFET includes a second drain and a second source. The second MOSFET and the first MOSFET are stacked, and the second source and the first source are internally connected in the first power module. The first source pin is connected to the first source and the second source. The first drain pin is connected to the first drain. The second drain pin is connected to the second drain. The second power module is disposed on the second surface and includes a third MOSFET, a fourth MOSFET, a second source pin, a third drain pin, and a fourth drain pin. The third MOSFET includes a third drain and a third source. The third MOSFET and the first MOSFET are connected in parallel. The fourth MOSFET includes a fourth drain and a fourth source. The third and fourth MOSFETs are stacked, and the third and fourth sources are connected internally within the second power module. The fourth MOSFET and the second MOSFET are connected in parallel. The second source pin is connected to both the third and fourth sources. The third drain pin is connected to the third drain. The fourth drain pin is connected to the fourth drain. A first source pad is disposed on the first surface for connection to the first source pin. A first drain pad is disposed on the first surface for connection to the first drain pin. A second drain pad is disposed on the first surface for connection to the second drain pin. A second source pad is disposed on the second surface for connection to the second source pin. A third drain pad is disposed on the second surface for connection to the third drain pin. A fourth drain pad is disposed on the second surface for connection to the fourth drain pin. The vertical projections of the first and second source pads on the first surface at least partially overlap. The vertical projections of the first and third drain pads on the first surface at least partially overlap. The vertical projections of the second and fourth drain pads on the first surface at least partially overlap.

[0022] In one embodiment, the first power module further includes a first gate pin and a second gate pin. A first MOSFET includes a first gate, and a second MOSFET includes a second gate. The first gate pin is connected to the first gate, and the second gate pin is connected to the second gate. The second power module further includes a third gate pin and a fourth gate pin. The third MOSFET includes a third gate, and the fourth MOSFET includes a fourth gate. The third gate pin is connected to the third gate, and the fourth gate pin is connected to the fourth gate. The power supply device further includes a first gate pad, a second gate pad, a third gate pad, and a fourth gate pad. The first gate pad and the second gate pad are disposed on a first surface and connected to the first gate pin and the second gate pin, respectively. The third gate pad and the fourth gate pad are disposed on a second surface and connected to the third gate pin and the fourth gate pin, respectively. The vertical projections of the first gate pad and the third gate pad on the first surface at least partially overlap. The vertical projections of the second gate pad and the fourth gate pad on the first surface at least partially overlap.

[0023] In one embodiment, the power supply device further includes a third source pad and a fourth source pad, respectively disposed on the first surface and the second surface. The third source pad is connected to the first source pin. The fourth source pad is connected to the second source pin. The vertical projections of the third source pad and the fourth source pad on the first surface at least partially overlap.

[0024] In one embodiment, AC current enters the first MOSFET from the first drain, passes through the first and second sources to enter the second MOSFET, and then flows out through the second drain.

[0025] In one embodiment, the first drain pin and the second drain pin are connected to the winding.

[0026] In one embodiment, the first power module further includes a first gate pin and a second gate pin. The first MOSFET includes a first gate, and the second MOSFET includes a second gate. The first gate pin is connected to the first gate, and the second gate pin is connected to the second gate. The first gate pin and the second gate pin each receive different control signals.

[0027] The beneficial effects of this invention are that its embodiments provide a power module for power conversion and a suitable power supply device thereof. The power module has two MOSFETs stacked on top of each other, and the sources of the two MOSFETs are interconnected within the power module. This allows the power module to form a compact structural layout, significantly reducing the space occupied on the circuit board and increasing power density. The AC circuit length is also effectively shortened, thereby significantly reducing leakage inductance and PCB losses, and improving the efficiency of the voltage regulator. The drain and gate of the two MOSFETs are independently led out, meeting the design requirements of the surrounding magnetic core and enabling independent control and flexible application of the MOSFETs. The source and drain pads on the circuit board are perpendicularly aligned, eliminating cross traces, effectively reducing wiring complexity, and simultaneously reducing losses caused by interlayer lateral current. Attached Figure Description

[0028] The following detailed description of the present invention and the schematic diagrams of the embodiments are intended to enable those skilled in the art to better understand the above content, and are not intended to limit the present invention.

[0029] Figure 1 This is a cross-sectional view of the power module according to the first embodiment of the present invention;

[0030] Figure 2 This is a three-dimensional structural diagram of the power module according to the first embodiment of the present invention;

[0031] Figure 3 This is a circuit diagram of the power supply device according to the first embodiment of the present invention;

[0032] Figure 4A This is a cross-sectional view of the power supply device according to the second embodiment of the present invention;

[0033] Figure 4B This is a cross-sectional view of the first power module according to the second embodiment of the present invention;

[0034] Figure 4C This is a cross-sectional view of the second power module according to the second embodiment of the present invention;

[0035] Figure 5 This is a top view of the power supply device according to the second embodiment of the present invention;

[0036] Figure 6 This is a perspective structural diagram of the power supply device according to the second embodiment of the present invention;

[0037] Figure 7A This is an exploded view of the power supply device according to the second embodiment of the present invention;

[0038] Figure 7B An exploded view of the power supply device according to the second embodiment of the present invention from another perspective;

[0039] Figure 8This is a circuit diagram of the power supply device according to the second embodiment of the present invention;

[0040] Figure 9 This is a cross-sectional view of a MOSFET component according to a third embodiment of the present invention. Detailed Implementation

[0041] Some typical embodiments embodying the features and advantages of the present invention will be described in detail in the following description. It should be understood that the present invention can be varied in different ways without departing from its scope, and the descriptions and drawings herein are illustrative in nature and not intended to limit the invention. For example, if the following description of a first feature disposed on or above a second feature indicates that it includes embodiments where the first and second features are in direct contact, as well as embodiments where additional features may be disposed between the first and second features, so that the first and second features may not be in direct contact. Furthermore, different embodiments in this disclosure may use repeated reference numerals and / or markings. These repetitions are for simplification and clarity and are not intended to limit the relationships between the various embodiments and / or the described appearance structures. Moreover, to facilitate the description of the relationship between one component or feature in the drawings and another component(s) or feature(s), spatially related terms such as "upper," "lower," "top," "bottom," and similar terms may be used. In addition to the orientations illustrated in the accompanying drawings, spatially relevant terms are used to cover different orientations of the device in use or operation. The device may also be otherwise positioned (e.g., rotated 90 degrees or located in other orientations), and the descriptions of the spatially relevant terms used will be interpreted accordingly. Furthermore, when a component is referred to as "connected to" or "coupled to" another component, it may be directly connected to or coupled to the other component, or there may be intervening components. Additionally, it is understood that while terms such as "first," "second," etc., may be used in the claims to describe different components, these components should not be limited by these terms, and the components described accordingly in the embodiments are represented by different component symbols. These terms are used to distinguish different components. For example, a first component may be referred to as a second component, and similarly, a second component may be referred to as a first component without departing from the scope of the embodiments. The term "and / or" as thus used includes any or all combinations of one or more of the related listed items.

[0042] Please see Figure 1 as well as Figure 2 . Figure 1 This is a cross-sectional view of the power module according to the first embodiment of the present invention. Figure 2This is a perspective structural diagram of a power module according to a first embodiment of the present invention. In this embodiment, the power module 10 includes a molding compound 11, a first MOSFET 12, a second MOSFET 13, a first source pin 14, a first drain pin 15, and a second drain pin 16. The molding compound 11 includes a first surface 111 and a second surface 112. The first surface 111 and the second surface 112 are opposite to each other in a first direction (Z-axis direction). The first MOSFET 12 and the second MOSFET 13 are disposed, for example, between the first surface 111 and the second surface 112. The first MOSFET 12 includes a first wafer 121, a first source 122, and a first drain 123. The second MOSFET 13 includes a second wafer 131, a second source 132, and a second drain 133. The first MOSFET 12 is stacked on top of the second MOSFET 13. Specifically, the vertical projections of the first MOSFET 12 and the second MOSFET 13 on the second surface 112 at least partially overlap. In this embodiment, the first drain 123 is disposed on the top surface of the first wafer 121, and the first source 122 is disposed on the bottom surface of the first wafer 121. The second source 132 is disposed on the top surface of the second wafer 131, and the second drain 133 is disposed on the bottom surface of the second wafer 131. The bottom surface of the first wafer 121 and the top surface of the second wafer 131 are opposite to each other in a first direction (Z-axis direction). Thus, the first source 122 and the second source 132 are connected within the molding compound 11 of the power module 10.

[0043] In this embodiment, the first source pin 14 includes, for example, a first body portion 141 and a first extension portion 142 connected to each other. The first drain pin 15 includes a second body portion 151 and a second extension portion 152 connected to each other. The second drain pin 16 includes a third body portion 161 and a third extension portion 162 connected to each other. The first body portion 141, the second body portion 151, and the third body portion 161 are embedded in the encapsulation material 11, and the first extension portion 142, the second extension portion 152, and the third extension portion 162 are disposed and exposed on the surface of the encapsulation material 11. The first body portion 141 of the first source pin 14 is connected to the first source 122 and the second source 132. The second body portion 151 of the first drain pin 15 is connected to the first drain 123. The third body portion 161 of the second drain pin 16 is connected to the second drain 133. In this embodiment, the first body portion 141 is disposed, for example, between the first source 122 and the second source 132, but the invention is not limited thereto.

[0044] In this embodiment, the AC current enters the first chip 121 from the first drain 123. Then, it enters the second chip 131 through the first source 122 and the second source 132, and exits through the second drain 133. Specifically, the AC current enters the power module 10 through the first drain pin 15, sequentially passing through the first drain 123, the first chip 121, the first source 122, the first source pin 14, the second source 132, the second chip 131, and the second drain 133, finally exiting the power module 10 through the second drain pin 16. Of course, the direction of the AC current in this invention is not limited to this. In other embodiments, the direction of the AC current is, for example, opposite to the aforementioned current direction, i.e., entering the power module 10 through the second drain pin 16 and exiting the power module 10 through the first drain pin 15, which will not be elaborated here. In this embodiment, the first drain pin 15 and the second drain pin 16 are connected to the two ends of the winding (not shown) respectively, so as to surround the magnetic core (not shown) to realize power conversion. After the AC current flows out of the winding, it enters the power module 10 through the first drain pin 15, and returns to the winding after leaving the power module 10 through the second drain pin 16.

[0045] In this embodiment, the first extension 142 of the first source pin 14, the second extension 152 of the first drain pin 15, and the third extension 162 of the second drain pin 16 are all located on the second surface 112 of the molding compound 11 for contacting the pads to achieve electrical connection. In another embodiment, the first extension 142, the second extension 152, and the third extension 162 are all located on the first surface 111 of the molding compound 11. In other words, the first source pin 14, the first drain pin 15, and the second drain pin 16 of the power module 10 of the present invention are led out from the same surface of the power module 10. In this embodiment, the power module 10 also includes a first gate pin 17 and a second gate pin 18. The first gate pin 17 includes a fourth body portion (not shown) and a fourth extension 171 connected to each other. The second gate pin 18 includes a fifth body portion (not shown) and a fifth extension 181 connected to each other. The fourth and fifth body portions are embedded within the molding compound 11, and the fourth extension portion 171 and the fifth extension portion 181 are disposed and exposed on the surface of the molding compound 11. The first MOSFET 12 includes a first gate, and the second MOSFET 13 includes a second gate. The fourth body portion of the first gate pin 17 is connected to the first gate of the first MOSFET 12, and the fifth body portion of the second gate pin 18 is connected to the second gate of the second MOSFET 13. The first gate pin 17 and the second gate pin 18 receive different control signals.

[0046] In this embodiment, the second extension 152 of the first drain pin 15 and the third extension 162 of the second drain pin 16 are arranged symmetrically about the second surface 112, for example. The fourth extension 171 of the first gate pin 17 and the fifth extension 181 of the second gate pin 18 are arranged symmetrically about the second surface 112, for example. The axis of symmetry is, for example, parallel to the second direction (X-axis direction), but the invention is not limited thereto. By symmetrically arranging the exposed portions of the pins, it is advantageous to achieve vertical correspondence of terminals when two parallel power modules are arranged on the upper and lower surfaces of the circuit board, eliminating cross traces, effectively reducing the complexity of wiring, and reducing losses caused by interlayer lateral current.

[0047] Please see Figures 1 to 3 . Figure 3 This is a circuit diagram of a power supply device according to a first embodiment of the present invention. When the power supply device of the present invention is applied to, for example... Figure 8 In the circuit shown, the first MOSFET 12 of the power module 10 is an SR-MOSFET S1, and the second MOSFET 13 of the power module 10 is an SR-MOSFET S2. The first drain 123 of the first MOSFET 12 is connected to one end of the winding through the first drain pin 15, and the second drain 133 of the second MOSFET 13 is connected to the other end of the winding through the second drain pin 16. The first source 122 of the first MOSFET 12 and the second source 132 of the second MOSFET 13 are connected to each other through the first body portion 141 of the first source pin 14.

[0048] Please see Figures 4A to 7B . Figure 4A This is a cross-sectional view of the power supply device according to the second embodiment of the present invention. Figure 4B This is a cross-sectional view of the first power module according to the second embodiment of the present invention. Figure 4C This is a cross-sectional view of the second power module according to the second embodiment of the present invention. Figure 5 This is a top view of the power supply device according to the second embodiment of the present invention. Figure 6 This is a perspective structural diagram of the power supply device according to the second embodiment of the present invention. Figure 7A as well as Figure 7BThis is an exploded view of the power supply device according to a second embodiment of the present invention from different perspectives. In this embodiment, the power supply device 1 includes a first power module 10a, a second power module 10b, a circuit board 20, a first source pad 30a, a third source pad 40a, a first drain pad 50a, a second drain pad 60a, a second source pad 30b, a fourth source pad 40b, a third drain pad 50b, and a fourth drain pad 60b. The circuit board 20 includes a first circuit board surface 21 and a second circuit board surface 22 that are opposite to each other in a first direction (Z-axis direction). The circuit board 20 also includes a receiving groove 23 that extends through the first circuit board surface 21 and the second circuit board surface 22 along the first direction (Z-axis direction). The receiving groove 23 is used to receive a magnetic core (not shown) to realize power conversion. In this embodiment, the first power modules 10a and 10b and Figures 1 to 2 The power module 10 shown is similar. The first power module 10a includes a first MOSFET 12a, a second MOSFET 13a, a first source pin 14a, a first drain pin 15a, a second drain pin 16a, a first gate pin 17a, and a second gate pin 18a. The first MOSFET 12a includes a first source pin 122a and a first drain pin 123a. The second MOSFET 13a includes a second source pin 132a and a second drain pin 133a. The second power module 10b includes a third MOSFET 12b, a fourth MOSFET 13b, a first source pin 14b, a first drain pin 15b, a second drain pin 16b, a first gate pin 17b, and a second gate pin 18b. The third MOSFET 12b includes a third source pin 122b and a third drain pin 123b. The fourth MOSFET 13b includes a fourth source pin 132b and a fourth drain pin 133b. The components of the aforementioned first power module 10a and second power module 10b correspond to the first MOSFET 12, first source 122, first drain 123, second MOSFET 13, second source 132, second drain 133, first source pin 14, first drain pin 15, second drain pin 16, first gate pin 17, and second gate pin 18 of the power module 10, respectively, and have the same structure and function. Furthermore, the same component designations represent the same components, structures, and functions, which will not be elaborated further here. The first power module 10a is disposed on the surface 21 of the first circuit board. The second power module 10b is disposed on the surface 22 of the second circuit board. The second surface 112 of the first power module 10a faces the surface 21 of the first circuit board. The second surface 112 of the second power module 10b faces the surface 22 of the second circuit board. In this embodiment, the first MOSFET 12a of the first power module 10a and the third MOSFET 12b of the second power module 10b are connected in parallel. The second MOSFET 13a of the first power module 10a is connected in parallel with the fourth MOSFET 13b of the second power module 10b.

[0049] In this embodiment, a first source pad 30a, a third source pad 40a, a first drain pad 50a, and a second drain pad 60a are disposed on the surface 21 of a first circuit board. The first source pad 30a and the third source pad 40a are connected to the first source pin 14a of the first power module 10a. The first drain pad 50a is connected to the first drain pin 15a of the first power module 10a. The second drain pad 60a is connected to the second drain pin 16a of the first power module 10a. A second source pad 30b, a fourth source pad 40b, a third drain pad 50b, and a fourth drain pad 60b are disposed on the surface 22 of a second circuit board. The second source pad 30b and the fourth source pad 40b are connected to the second source pin 14b of the second power module 10b. The third drain pad 50b is connected to the third drain pin 15b of the second power module 10b. The fourth drain pad 60b is used to connect to the fourth drain pin 16b of the second power module 10b. In other embodiments, the power supply device 1 may also include, for example, only a first source pad 30a and a second source pad 30b, with the first source pad 30a connected to the first source pin 14a of the first power module 10a, and the second source pad 30b connected to the second source pin 14b of the second power module 10b.

[0050] In this embodiment, the vertical projections of the first source pad 30a and the second source pad 30b on the surface 21 of the first circuit board at least partially overlap. The vertical projections of the third source pad 40a and the fourth source pad 40b on the surface 21 of the first circuit board at least partially overlap. The vertical projections of the first drain pad 50a and the third drain pad 50b on the surface 21 of the first circuit board at least partially overlap. The vertical projections of the second drain pad 60a and the fourth drain pad 60b on the surface 21 of the first circuit board at least partially overlap. By symmetrically distributing the pads on the circuit board and corresponding to each other in the vertical direction, the power supply device 1 of the present invention can omit cross traces, effectively reducing the complexity of wiring and reducing losses.

[0051] In this embodiment, the power supply device 1 further includes a first gate pad 70a, a third gate pad 70b, a second gate pad 80a, and a fourth gate pad 80b. The first gate pad 70a and the second gate pad 80a are disposed on the surface 21 of a first circuit board. The first gate pad 70a is connected to the first gate pin 17a of the first power module 10a. The second gate pad 80a is connected to the second gate pin 18a of the first power module 10a. The third gate pad 70b and the fourth gate pad 80b are disposed on the surface 22 of a second circuit board. The third gate pad 70b is connected to the third gate pin 17b of the second power module 10b. The fourth gate pad 80b is connected to the fourth gate pin 18b of the second power module 10b. The vertical projections of the first gate pad 70a and the third gate pad 70b on the surface 21 of the first circuit board at least partially overlap. The vertical projections of the second gate pad 80a and the fourth gate pad 80b on the surface 21 of the first circuit board at least partially overlap. In this embodiment, the first gate pin 17a and the second gate pin 18a of the first power module 10a receive different control signals, and the third gate pin 17b and the fourth gate pin 18b of the second power module 10b receive different control signals. In this embodiment, the circuit board 20 also includes a winding 24. The winding is embedded inside the circuit board and surrounds a receiving slot 23 for accommodating a magnetic core (not shown). The first drain pad 50a and the third drain pad 50b are jointly connected to one end of the winding 24, and the second drain pad 60a and the fourth drain pad 60b are jointly connected to the other end of the winding 24. In this way, the first drain 123a of the first power module 10a and the third drain 123b of the second power module 10b are connected to one end of the winding 24 through the first drain pin 15a and the third drain pin 15b, respectively. The second drain 133a of the first power module 10a and the fourth drain 133b of the second power module 10b are connected to the other end of the winding 24 through the second drain pin 16a and the fourth drain pin 16b, respectively, thereby realizing power conversion.

[0052] In this embodiment, the power supply device 1 includes, for example, two first power modules 10a, two second power modules 10b, two first source pads 30a, two third source pads 40a, two first drain pads 50a, two second drain pads 60a, two second source pads 30b, two fourth source pads 40b, two third drain pads 50b, two fourth drain pads 60b, two first gate pads 70a, two first gate pads 70b, two second gate pads 80a, and two second gate pads 80b. The circuit board 20 includes, for example, two receiving slots 23. The number of the aforementioned components in this invention is not limited thereto.

[0053] Please see Figures 4A to 8 . Figure 8This is a circuit diagram of a power supply device according to a second embodiment of the present invention. When the power supply device 1 of the present invention is applied to, for example... Figure 8 In the circuit shown, the first MOSFET 12a of the first power module 10a is an SR-MOSFET S1, the second MOSFET 13a of the first power module 10a is an SR-MOSFET S2, the third MOSFET 12b of the second power module 10b is an SR-MOSFET S3, and the fourth MOSFET 13b of the second power module 10b is an SR-MOSFET S4. The first MOSFET 12a of the first power module 10a and the third MOSFET 12b of the second power module 10b are connected in parallel. The second MOSFET 13a of the first power module 10a and the fourth MOSFET 13b of the second power module 10b are connected in parallel. The first drain 123a of the first power module 10a and the third drain 123b of the second power module 10b are connected to one end of the winding 24 via the first drain pin 15a and the third drain pin 15b, respectively. The second drain 133a of the first power module 10a and the fourth drain 133b of the second power module 10b are connected to the other end of the winding 24 via the second drain pin 16a and the fourth drain pin 16b, respectively. The first source 122a and the second source 132a of the first power module 10a are connected to each other via the first source pin 14a. The third source 122b and the fourth source 132b of the second power module 10b are connected to each other via the second source pin 14b. The first source pin 14a of the first power module 10a and the second source pin 14b of the second power module 10b are connected to each other via the circuit board 20. After the AC current flows out of the winding 24, it enters the first power module 10a and the second power module 10b through the first drain pin 15a and the third drain pin 15b, respectively, and then returns to the winding 24 after leaving the first power module 10a and the second power module 10b through the second drain pin 16a and the fourth drain pin 16b, respectively.

[0054] Please see Figure 9 . Figure 9This is a cross-sectional view of a MOSFET assembly according to a third embodiment of the present invention. In this embodiment, the MOSFET assembly 9 includes a first MOSFET 91, a second MOSFET 92, and a circuit board 93. The circuit board 93 includes a first circuit board surface 931 and a second circuit board surface 932. The first circuit board surface 931 and the second circuit board surface 932 are opposite to each other in a first direction (Z-axis direction). The first MOSFET 91 and the second MOSFET 92 are embedded inside the circuit board 93, for example, located between the first circuit board surface 931 and the second circuit board surface 932. The first MOSFET 91 includes a first wafer 911, a first source 912, and a first drain 913. The second MOSFET 92 includes a second wafer 921, a second source 922, and a second drain 923. The first MOSFET 91 is stacked on top of the second MOSFET 92. Specifically, the vertical projections of the first MOSFET 91 and the second MOSFET 92 on the second circuit board surface 932 at least partially overlap. In this embodiment, the first drain 913 is disposed on the top surface of the first wafer 911, and the first source 912 is disposed on the bottom surface of the first wafer 911. The second source 922 is disposed on the top surface of the second wafer 921, and the second drain 923 is disposed on the bottom surface of the second wafer 921. The bottom surface of the first wafer 911 and the top surface of the second wafer 921 are opposite to each other in the first direction (Z-axis direction).

[0055] In this embodiment, AC current enters the first wafer 911 through the first drain 913, then flows through the first source 912 and the second source 922 into the second wafer 921, and finally flows out through the second drain 923. In this embodiment, the first drain 913 and the second drain 923 are connected, for example, to the two ends of a winding (not shown) to surround a magnetic core (not shown) and achieve power conversion. After flowing out of the winding, the AC current enters the first wafer 911 through the first drain 913, and returns to the winding after leaving the second wafer 921 through the second drain 923.

[0056] In this embodiment, the circuit board 93 further includes a first wiring layer 933, a second wiring layer 934, and a third wiring layer 935. A first drain 913 is connected to the first wiring layer 933. A second drain 923 is connected to the third wiring layer 935. A first source 912 and a second source 922 are connected to the second wiring layer 934. The second wiring layer 934 is located between the first wiring layer 933 and the third wiring layer 935. In this embodiment, the second wiring layer 934 is, for example, located between the first source 912 and the second source 922. The first wiring layer 933 is adjacent to the surface 931 of the first circuit board, and the third wiring layer 935 is adjacent to the surface 932 of the second circuit board. The first drain 913 is connected to one end of the winding, for example, through the first wiring layer 933, and the second drain 923 is connected to the other end of the winding through the third wiring layer 935.

[0057] In this embodiment, the first drain 913, the second drain 923, the first source 912, and the second source 922 are connected, for example, to corresponding pads (not shown) on the surface of the circuit board 93. In this embodiment, the first MOS 91 further includes a first gate (not shown), and the second MOS further includes a second gate (not shown). The first gate and the second gate are used to receive different control signals, respectively.

[0058] In summary, this invention provides a power module for power conversion and a suitable power supply device thereof. The power module comprises two stacked MOSFETs, with their sources interconnected internally. This allows for a compact layout, significantly reducing PCB space and increasing power density. The AC loop length is also effectively shortened, thereby greatly reducing leakage inductance and PCB losses, and improving voltage regulator efficiency. The drain and gate of each MOSFET are independently led out, meeting the design requirements of a surrounding magnetic core and enabling independent control and flexible application of the MOSFETs. The source and drain pads on the circuit board are perpendicularly aligned, eliminating cross traces, effectively reducing wiring complexity, and minimizing losses from interlayer lateral current.

[0059] This invention may be modified in various ways by those skilled in the art, but all such modifications shall not depart from the scope of protection sought by the claims of this invention.

Claims

1. A power module, comprising: A first MOSFET, comprising a first drain and a first source; A second MOSFET includes a second drain and a second source, wherein the second MOSFET is stacked with the first MOSFET, and the first source and the second source are connected inside the power module; A first source pin is connected to both the first source and the second source; A first drain pin, connected to the first drain; and A second drain pin is connected to the second drain.

2. The power module as claimed in claim 1, wherein an AC current enters the first MOSFET from the first drain, passes through the first source and the second source to enter the second MOSFET, and then flows out through the second drain.

3. The power module as claimed in claim 1, wherein the first drain pin and the second drain pin are connected to a winding.

4. The power module of claim 1, wherein the first source pin, the first drain pin, and the second drain pin are located on the same side of the power module.

5. The power module of claim 1, wherein the power module further comprises a first gate pin and a second gate pin, the first MOSFET includes a first gate, the second MOSFET includes a second gate, the first gate pin is connected to the first gate, the second gate pin is connected to the second gate, and the first gate pin and the second gate pin respectively receive different control signals.

6. A MOSFET component, comprising: A first MOSFET, comprising a first drain and a first source; A second MOSFET includes a second drain and a second source, wherein the second MOSFET is stacked with the first MOSFET, and the second source is connected to the first source; as well as A circuit board, wherein the first MOSFET and the second MOSFET are embedded inside the circuit board.

7. The MOSFET assembly of claim 6, wherein an AC current enters the first MOSFET from the first drain, passes through the first source and the second source to enter the second MOSFET, and then flows out through the second drain.

8. The MOSFET assembly of claim 6, wherein the first drain and the second drain are connected to a winding.

9. The MOSFET assembly of claim 6, wherein the circuit board includes a first wiring layer, a second wiring layer and a third wiring layer, the first drain is connected to the first wiring layer, the second drain is connected to the third wiring layer, the first source and the second source are connected to the second wiring layer, and the second wiring layer is located between the first wiring layer and the third wiring layer.

10. The MOSFET assembly of claim 6, wherein the first drain, the second drain, the first source, and the second source are respectively connected to corresponding pads on the surface of the circuit board.

11. The MOSFET assembly of claim 6, wherein the first MOSFET includes a first gate, the second MOSFET includes a second gate, and the first gate and the second gate respectively receive different control signals.

12. A power supply device, comprising: A circuit board, including a first surface and a second surface opposite to each other; A first power module is disposed on the first surface, the first power module comprising: A first MOSFET, comprising a first drain and a first source; A second MOSFET includes a second drain and a second source, wherein the second MOSFET is stacked with the first MOSFET, and the second source and the first source are connected inside the first power module; A first source pin is connected to both the first source and the second source; A first drain pin, connected to the first drain; and A second drain pin is connected to the second drain; A second power module is disposed on the second surface, the second power module comprising: A third MOSFET, including a third drain and a third source, wherein the third MOSFET is connected in parallel with the first MOSFET; A fourth MOSFET includes a fourth drain and a fourth source, wherein the third MOSFET and the fourth MOSFET are stacked, and the third source and the fourth source are connected inside the second power module, and the fourth MOSFET and the second MOSFET are connected in parallel; A second source pin is connected to the third and fourth source pins; A third drain pin, connected to the third drain; and A fourth drain pin is connected to the fourth drain; A first source pad is disposed on the first surface for connection with the first source pin; A first drain pad is disposed on the first surface for connection with the first drain pin; A second drain pad is disposed on the first surface for connection with the second drain pin; A second source pad is disposed on the second surface for connection with the second source pin; A third drain pad is disposed on the second surface for connection with the third drain pin; and A fourth drain pad is disposed on the second surface for connection with the fourth drain pin. The vertical projections of the first source pad and the second source pad on the first surface at least partially overlap, the vertical projections of the first drain pad and the third drain pad on the first surface at least partially overlap, and the vertical projections of the second drain pad and the fourth drain pad on the first surface at least partially overlap.

13. The power supply device of claim 12, wherein the first power module further comprises a first gate pin and a second gate pin, the first MOSFET includes a first gate, the second MOSFET includes a second gate, the first gate pin is connected to the first gate, and the second gate pin is connected to the second gate. The second power module further includes a third gate pin and a fourth gate pin. The third MOSFET includes a third gate, and the fourth MOSFET includes a fourth gate. The third gate pin is connected to the third gate, and the fourth gate pin is connected to the fourth gate. The power supply device further includes a first gate pad, a second gate pad, a third gate pad, and a fourth gate pad. The first gate pad and the second gate pad are disposed on the first surface and connected to the first gate pin and the second gate pin, respectively. The third gate pad and the fourth gate pad are disposed on the second surface and connected to the third gate pin and the fourth gate pin, respectively. The vertical projections of the first gate pad and the third gate pad on the first surface at least partially overlap, and the vertical projections of the second gate pad and the fourth gate pad on the first surface at least partially overlap.

14. The power supply device of claim 12, wherein the power supply device further comprises a third source pad and a fourth source pad, respectively disposed on the first surface and the second surface, the third source pad being connected to the first source pin, the fourth source pad being connected to the second source pin, and the vertical projections of the third source pad and the fourth source pad on the first surface at least partially overlapping.

15. The power supply device of claim 12, wherein an AC current enters the first MOSFET from the first drain, passes through the first source and the second source into the second MOSFET, and then flows out through the second drain.

16. The power supply device of claim 12, wherein the first drain pin and the second drain pin are connected to a winding.

17. The power supply device of claim 12, wherein the first power module further includes a first gate pin and a second gate pin, the first MOSFET includes a first gate, the second MOSFET includes a second gate, the first gate pin is connected to the first gate, the second gate pin is connected to the second gate, and the first gate pin and the second gate pin respectively receive different control signals.

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