A method and system for removing single indium balls within an indium array

Abstract

The application belongs to the technical field of semiconductors, and provides an indium array single-indium ball removal method and system, which comprises the following steps: fuzzy positioning, height data measurement, final circuit thickness data calculation, original readout circuit fixing, cross wire alignment, height drop information calculation, vacuum extraction and heating, tungsten-platinum alloy cold needle puncture, target abnormal indium ball removal, and cooling and pressurization; the single-indium ball in the readout circuit array is removed through positioning, heating and cold extraction, which avoids the occurrence of readout circuit scrapping and photosensitive layer cracking, improves the utilization rate of the readout circuit and the yield of large-area array devices, and reduces the cost.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor, in particular to a method and system for removing single indium ball in indium array. BACKGROUND

[0002] In an infrared focal plane device, a silicon-based readout circuit is an important component that cannot be replaced, and its electrical connection with photosensitive material is realized by indium prepared on its surface.

[0003] Currently, the development of infrared focal plane devices tends to be small and large array, and the uniformity of the indium preparation process on the surface of the original readout circuit may be poor, resulting in uneven size of the indium column after balling, and even individual large indium balls leading to readout circuit scrap and device photosensitive layer cracking. SUMMARY

[0004] In order to overcome the shortcomings of the prior art, the purpose of the present application is to provide a method and system for removing single indium ball in indium array, which solves the problem of readout circuit scrap or photosensitive layer cracking caused by poor uniformity of the indium preparation process.

[0005] To achieve the above-mentioned purpose, the present application provides the following solutions:

[0006] A method for removing single indium ball in indium array, comprising:

[0007] Placing the original readout circuit after balling on a metallographic microscope, screening the indium ball region on the original readout circuit whose indium ball morphology does not conform to the preset indium ball parameter range, and obtaining fuzzy positioning data;

[0008] Measuring the target abnormal indium ball according to the fuzzy positioning data using a laser focusing device, and obtaining height data;

[0009] Measuring the thickness of the readout circuit on a non-contact thickness gauge, and obtaining first thickness data;

[0010] Measuring the electrode thickness of the accompanying piece in the readout circuit preparation process using a step meter, obtaining second thickness data, and adding the first thickness data and the second thickness data to obtain final circuit thickness data;

[0011] Placing the original readout circuit at the upper left corner in the groove on the silicon carbide substrate clamp platform;

[0012] Aligning the target abnormal indium ball on the original readout circuit with the crosshair on the computer according to the fuzzy positioning data by adjusting the lens visual window;

[0013] Adding the height data, the final circuit thickness data and the preset vertical axis coordinates of the mechanical arm to obtain the lowering height information;

[0014] closing the chamber cover where the original readout circuit is located, vacuumizing the vacuum chamber where the original readout circuit is located to 5E-2 Pa or above, and heating the silicon carbide substrate clamp platform to 157℃;

[0015] after heating the original readout circuit to a preset heating duration, if the pressure value in the vacuum chamber does not exceed 1E-1 Pa, then according to the height data, the tungsten-platinum alloy cold needle is used to puncture the target abnormal indium ball;

[0016] after puncturing the target abnormal indium ball to a preset puncture duration, the tungsten-platinum alloy cold needle is used to strip the target abnormal indium ball, and an optimized readout circuit is obtained;

[0017] after the stripping of the target abnormal indium ball is completed, the heating of the silicon carbide substrate clamp platform is stopped, the silicon carbide substrate clamp platform is cooled to room temperature, nitrogen is filled into the vacuum chamber, and after the air pressure in the vacuum chamber recovers to atmospheric pressure, the optimized readout circuit is taken out.

[0018] Preferably, the original readout circuit after balling is placed on a metallographic microscope, and the indium ball region on the original readout circuit whose indium ball morphology does not conform to the preset indium ball parameter range is screened to obtain fuzzy positioning data, including:

[0019] After the target indium column of the original readout circuit is prepared, the indium column is converted into a spherical indium by using an indium column balling process;

[0020] The original readout circuit is placed on a metallographic microscope, and the indium ball morphology on the surface of the original readout circuit is checked by using the metallographic microscope under 10 to 50 times magnification. The indium ball region that does not conform to the preset indium ball parameter range is marked as the target abnormal indium ball, and the region where the target abnormal indium ball is located is recorded to obtain the fuzzy positioning data.

[0021] Preferably, according to the fuzzy positioning data, a laser focusing device is used to measure the target abnormal indium ball to obtain height data, including:

[0022] The original readout circuit is placed on a laser confocal microscope, and the region where the target abnormal indium ball is located is positioned by using the laser confocal microscope under 10 times magnification according to the fuzzy positioning data;

[0023] The laser confocal microscope under 50 times magnification is used to perform laser measurement on the target abnormal indium ball to obtain the height data.

[0024] Preferably, the original readout circuit is placed in the upper left corner of the groove on the silicon carbide substrate clamp platform, including:

[0025] The original readout circuit where the target abnormal indium ball exists is placed in the upper left corner of the groove on the silicon carbide substrate clamp platform, and the silicon carbide substrate clamp platform is fixed by a fixed module;

[0026] The initial position of the mechanical arm is positioned to the upper left corner of the silicon carbide substrate clamp platform, and the upper left corner of the silicon carbide substrate clamp platform is set as the origin;

[0027] The silicon carbide substrate clamp platform is divided into horizontal and vertical coordinates according to the origin at a grid precision of 1

[0028] Preferably, the target abnormal indium ball on the original readout circuit and the crosshair on the operation computer are aligned by adjusting the lens visual window according to the fuzzy positioning data, including:

[0029] The area where the target abnormal indium ball is located is positioned by a 20x lens according to the fuzzy positioning data;

[0030] The crosshair on the operation computer is aligned with the center of the target abnormal indium ball by a 50x or 100x lens.

[0031] Preferably, the chamber cover where the original readout circuit is located is closed, the vacuum chamber where the original readout circuit is located is pumped to above 5E-2 Pa, and the silicon carbide substrate clamp platform is heated to 157℃, including:

[0032] When the pressure value of the vacuum chamber exceeds 1E-1 Pa, an error prompt is sent to the staff.

[0033] Preferably, an indium array single indium ball removal system, including: a grounded anti-static component, a silicon carbide substrate clamp platform, a fixed module, a mechanical arm, a guide rail, a stepper motor, a reducer, a multi-magnification microscope, a tungsten-platinum alloy cold needle fixing platform, a tungsten-platinum alloy cold needle, a liquid cooling circulation module, a vacuum chamber, and an operation computer;

[0034] The grounded anti-static component is connected with the silicon carbide substrate clamp platform; the fixed module is placed on the silicon carbide substrate clamp platform; the mechanical arm is placed on the guide rail; the mechanical arm is connected with the stepper motor and the reducer respectively; the multi-magnification microscope, the tungsten-platinum alloy cold needle fixing platform, and the tungsten-platinum alloy cold needle are all fixed on the mechanical arm; the liquid cooling circulation module is connected with the silicon carbide substrate clamp platform; the vacuum chamber and the silicon carbide substrate clamp platform form a sealed space; the operation computer is connected with the mechanical arm, the stepper motor, the reducer, the multi-magnification microscope, and the tungsten-platinum alloy cold needle respectively.​

[0035] The silicon carbide substrate clamp platform is used for placing the readout circuit to be optimized; the fixing module is used for fixing the silicon carbide substrate clamp platform; the mechanical arm is used for moving the tungsten-platinum alloy cold needle to the target indium ball position; and the multiple magnification microscope is used for positioning the indium ball to be removed on the readout circuit.

[0036] The present application discloses the following technical effects:

[0037] The present application provides a method and system for removing a single indium ball in an indium array, which solves the problem of readout circuit scrapping or photosensitive layer cracking caused by poor uniformity of current indium preparation process through cross wire alignment, height information calculation, vacuum extraction and heating, tungsten-platinum alloy cold needle puncture, target abnormal indium ball removal, and cooling and pressurization, and realizes fine removal of target abnormal indium balls. BRIEF DESCRIPTION OF DRAWINGS

[0038] In order to more clearly illustrate the technical solutions in the embodiments of the present application or the prior art, the following will briefly introduce the drawings needed to be used in the embodiments. Obviously, the drawings in the following description are only some embodiments of the present application, and other drawings can be obtained by those skilled in the art without creative labor.

[0039] Figure 1 A single indium ball removal process diagram in an indium array is provided for the embodiments of the present application.

[0040] Figure 2 A substrate clamp platform plan view is provided for the embodiments of the present application.

[0041] Figure 3 A substrate clamp platform sectional view is provided for the embodiments of the present application. DETAILED DESCRIPTION

[0042] The technical solutions in the embodiments of the present application will be described clearly and completely below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only some embodiments of the present application, not all embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative labor are within the scope of protection of the present application.

[0043] The purpose of the present application is to provide a method and system for removing a single indium ball in an indium array, which solves the problem of readout circuit scrapping or photosensitive layer cracking caused by poor uniformity of current indium preparation process.

[0044] In order to make the above-mentioned purposes, features and advantages of the present application more obvious and easy to understand, the present application will be further described in detail below with reference to the drawings and specific embodiments.

[0045] Figure 1 A schematic diagram of the indium array single indium ball removal process provided by the embodiment of the present application is shown in FIG. 1, and the present application provides an indium array single indium ball removal method, comprising the following steps: Figure 1

[0046] Step 100: Place the original readout circuit after balling on a metallographic microscope, screen the indium ball region on the original readout circuit whose indium ball morphology does not conform to the preset indium ball parameter range, and obtain fuzzy positioning data;

[0047] Step 200: Measure the target abnormal indium ball according to the fuzzy positioning data using a laser focusing device, and obtain height data;

[0048] Step 300: Measure the thickness of the readout circuit on a non-contact thickness gauge, and obtain first thickness data;

[0049] Step 400: Measure the electrode thickness of the accompanying piece in the readout circuit preparation process using a step gauge, obtain second thickness data, and add the first thickness data and the second thickness data to obtain final circuit thickness data;

[0050] Step 500: Place the original readout circuit in the upper left corner of the groove on the silicon carbide substrate clamp platform;

[0051] Step 600: Align the target abnormal indium ball on the original readout circuit with the crosshair on the computer according to the fuzzy positioning data by adjusting the lens visual window;

[0052] Step 700: Add the height data, the final circuit thickness data, and the preset vertical axis coordinates of the mechanical arm to obtain the lowering height information;

[0053] Step 800: Close the chamber cover where the original readout circuit is located, evacuate the vacuum chamber where the original readout circuit is located to above 5E-2Pa, and heat the silicon carbide substrate clamp platform to 157℃;

[0054] Step 900: After heating the original readout circuit to a preset heating duration, if the pressure value in the vacuum chamber does not exceed 1E-1Pa, then according to the lowering height information, use the tungsten-platinum alloy cold needle to puncture the target abnormal indium ball;

[0055] Step 1000: After puncturing the target abnormal indium ball to a preset puncture duration, use the tungsten-platinum alloy cold needle to strip the target abnormal indium ball, and obtain an optimized readout circuit;

[0056] ​Step 1100: When the target abnormal indium ball peeling is completed, stop heating the silicon carbide substrate clamp platform, cool the silicon carbide substrate clamp platform to room temperature, fill nitrogen into the vacuum chamber, and take out the optimized readout circuit when the pressure in the vacuum chamber returns to atmospheric pressure.

[0057] Further, the original readout circuit after balling is placed on a metallographic microscope, and indium ball regions on the original readout circuit that do not meet the preset indium ball parameter range are screened to obtain fuzzy positioning data, including:

[0058] After the target indium column of the original readout circuit is prepared, the target indium column is converted into a spherical indium by an indium column balling process;

[0059] The original readout circuit is placed on a metallographic microscope, and the indium ball morphology on the surface of the original readout circuit is checked by the metallographic microscope under 10 to 50 times, and the indium ball regions that do not meet the preset indium ball parameter range are marked as target abnormal indium balls, and the regions where the target abnormal indium balls are located are recorded to obtain the fuzzy positioning data.

[0060] Specifically, the target abnormal indium ball is measured by a laser focusing device according to the fuzzy positioning data to obtain height data, including:

[0061] The original readout circuit is placed on a laser confocal microscope, and the region where the target abnormal indium ball is located is positioned by the laser confocal microscope under a 10 times objective according to the fuzzy positioning data;

[0062] The laser confocal microscope under a 50 times objective is used to measure the target abnormal indium ball to obtain the height data.

[0063] Specifically, the original readout circuit is placed in the upper left corner in the groove on the silicon carbide substrate clamp platform, including:

[0064] The original readout circuit with the target abnormal indium ball is placed in the upper left corner in the groove on the silicon carbide substrate clamp platform, and the silicon carbide substrate clamp platform is fixed by a fixing module;

[0065] The initial position of the mechanical arm is positioned to the upper left corner of the silicon carbide substrate clamp platform, and the upper left corner of the silicon carbide substrate clamp platform is set as an origin;

[0066] According to the origin, the groove on the silicon carbide substrate clamp platform is divided into horizontal and vertical coordinates with a grid accuracy of 1

[0067] ​Further, aligning the target abnormal indium ball on the original readout circuit and the crosshair on the operation computer by adjusting the lens visual window according to the fuzzy positioning data, comprising:

[0068] Positioning the area where the target abnormal indium ball is located by using a 20 times lens according to the fuzzy positioning data;

[0069] Aligning the center of the target abnormal indium ball with the crosshair on the operation computer by using a 50 times or 100 times lens.

[0070] Further, closing the chamber cover where the original readout circuit is located, vacuumizing the vacuum chamber where the original readout circuit is located to 5E-2 Pa or above, and heating the silicon carbide substrate clamp platform to 157℃, comprising:

[0071] When the pressure value of the vacuum chamber exceeds 1E-1 Pa, an error prompt is sent to the staff.

[0072] Specifically, an indium array single indium ball removal system, comprising: a grounded anti-static component, a silicon carbide substrate clamp platform, a fixing module, a mechanical arm, a guide rail, a stepping motor, a reducer, a multi-magnification microscope, a tungsten-platinum alloy cold needle fixing platform, a tungsten-platinum alloy cold needle, a liquid cooling circulation module, a vacuum chamber, and an operation computer;

[0073] The grounded anti-static component is connected with the silicon carbide substrate clamp platform; the fixing module is placed on the silicon carbide substrate clamp platform; the mechanical arm is placed on the guide rail; the mechanical arm is connected with the stepping motor and the reducer respectively; the multi-magnification microscope, the tungsten-platinum alloy cold needle fixing platform, and the tungsten-platinum alloy cold needle are all fixed on the mechanical arm; the liquid cooling circulation module is connected with the silicon carbide substrate clamp platform; the vacuum chamber and the silicon carbide substrate clamp platform constitute a closed space; the operation computer is connected with the mechanical arm, the stepping motor, the reducer, the multi-magnification microscope, and the tungsten-platinum alloy cold needle respectively;

[0074] The silicon carbide substrate clamp platform is used to place the readout circuit to be optimized; the fixing module is used to fix the silicon carbide substrate clamp platform; the mechanical arm is used to move the tungsten-platinum alloy cold needle to the target indium ball position; the multi-magnification microscope is used to position the indium ball to be removed on the readout circuit.

[0075] Preferably, the system comprises the following components: a device overall grounding anti-static component; a silicon carbide substrate clamp platform, which can conduct infrared heat, adapt to various sizes of readout circuits; an ultra-high precision six-direction moving mechanical arm, including a guide rail, an ultra-high precision stepper motor, a reducer, a 20 / 50 / 100 times combined microscope, a tungsten-platinum alloy cold needle fixing platform, a tungsten-platinum alloy cold needle, and a liquid cooling circulation system; a vacuum chamber, including the silicon carbide substrate clamp platform and the ultra-high precision six-direction moving mechanical arm; a visual system calibration block; and an operation computer.

[0076] Further, the components require that the silicon carbide substrate clamp platform is 5 inches, with a roughness range of ±0.01 μm. The substrate clamp platform is referenced Figure 2 . The ultra-high six-direction moving mechanical arm and the guide rail are made of stainless steel, and the moving parts use solid lubricant or dry film lubrication. The ultra-high precision stepper motor requires an accuracy of not less than 1 micrometer, and uses solid lubricant. The operation computer is equipped with control software, including accurate positioning, mechanical arm control, readout circuit parameter input, temperature setting, vacuum setting, visual switching, and visual calibration.

[0077] Specifically, the implementation steps are as follows:

[0078] 1) After the readout circuit is prepared with an indium column, the columnar indium is changed into spherical indium through an indium column balling process. After balling, the indium reduces the top layer contact area and increases the indium column height, which will increase the electrical conductivity.

[0079] 2) The readout circuit after balling is placed on a metallographic microscope, and the indium ball morphology on the surface of the readout circuit is screened under 10 to 50 times magnification. If the morphology of some individual indium balls after balling is greater than 30% of the designed morphology, the area after flip-chip interconnection will probably produce a blind spot; or greater than 50% to 70%, the area may produce cracks after thinning. The indium balls with a volume larger than other indium balls are screened out, and the approximate area where they are located is recorded for fuzzy positioning.

[0080] 3) The large indium balls for fuzzy positioning are placed on a laser confocal microscope. First, the precise position is found using a 10 times objective lens, and then a high magnification lens is used to measure the height of the large indium ball in cooperation with laser focusing, and the data is recorded.

[0081] 4) A non-contact thickness gauge is used to measure the thickness data of the readout circuit, and the readout circuit electrode growth height is confirmed with the metal electrode preparation process. The final readout circuit thickness is obtained by adding the readout circuit thickness and the electrode thickness.

[0082] 5) The readout circuit screened out for having large indium balls is placed in the upper left corner of the groove on the silicon carbide substrate clamp platform, and the fixing module is placed.

[0083] 6) At this time, the initial position of the mechanical arm is at the upper left corner of the substrate clamp platform. The system will set the groove as the plane origin coordinate, and the system will set the groove as 1 The precision of each grid is divided into horizontal and vertical coordinates, which facilitates plane accurate positioning and six-direction positioning with the stepping motor of the mechanical arm.

[0084] 7) On the computer, use the control software to adjust the up and down position of the mechanical arm, so as to observe whether the mechanical arm is in the fuzzy positioning area of the readout circuit. At this time, the system will record the spatial coordinate position of the mechanical arm.

[0085] 8) In the lens visual window, use a 20x lens to adjust the focal length, and further observe the accurate position of the large indium ball. Then use a 50x lens to adjust the focal length, and align the crosshair on the screen to the center of the large indium ball. If the magnification effect of the 50x lens is not enough, a 100x lens can be used.

[0086] 9) Input the final circuit thickness and indium ball height into the system. The system automatically calculates the height to be lowered according to the current six-direction coordinates and the length of the tungsten-platinum alloy cold needle, and pops up a dialog box to confirm the lowering height information with the operator.

[0087] 10) Close the chamber cover, start the vacuum system, and the system automatically evacuates the chamber to above 5E-2 Pa, opens the substrate and heats it to the indium melting point temperature of 157℃. If the vacuum degree is less than 1E-1 Pa, the system will prompt an error.

[0088] 11) After heating for 1 to 3 minutes and the vacuum is maintained below 1E-1 Pa, press the start piercing button on the system after it changes from gray (not clickable) to green (clickable), and the mechanical arm with the tungsten-platinum alloy cold needle starts to slowly pierce the indium ball, but does not touch the electrode of the readout circuit.

[0089] 12) Set the piercing time to 1 to 3 minutes. The mechanical arm is equipped with a liquid cooling cycle to provide low temperature for the cold needle. The cooling liquid can provide a constant temperature of -10℃ for the cold needle. After the cold needle is pierced, theoretically, under the large temperature difference, the indium will quickly condense on the cold needle, realizing the peeling of a single indium ball. After the indium condenses on the tungsten-platinum alloy cold needle, the tungsten-platinum alloy cold needle is lifted and returns to the initial position. The large indium ball is peeled off from the indium array of the readout circuit.

[0090] 13) Turn off the heating on the operation system, open the substrate cooling, and turn off the cooling after the substrate temperature reaches room temperature.

[0091] 14) Press the break vacuum button, the chamber starts to fill with nitrogen, and after the chamber pressure returns to atmospheric pressure, press the break vacuum button again to stop the nitrogen filling.

[0092] 15) Remove the fixed module on the substrate clamp platform, and take out the readout circuit after the large indium ball is peeled off.

[0093] Preferably, the rejection principle is realized. In the preparation process of the infrared focal plane detector, since the metal indium still has good ductility at low temperature and is easy to prepare a large-area array, the infrared focal plane detector usually adopts indium to realize the electrical and mechanical connection between the photosensitive layer and the readout circuit. Due to the excellent ductility, the thermal mismatch between the photosensitive layer and the silicon readout circuit under cold and hot impact can also be buffered. Although indium has plasticity, the tensile limit is low, and the viscosity is large. When the photosensitive material and the readout circuit are cold pressure welded, the large indium ball may damage the diode structure of the photosensitive material, and the photosensitive elements around the large indium ball region may not be successfully connected with the normal volume of indium ball under normal interconnection conditions, resulting in electrical connection failure. And because the indium ball is too large, the large indium ball after pressure welding will connect the adjacent photosensitive elements around it, resulting in the appearance of invalid blind spot. The single indium ball removal system first finds the location of the large indium ball through the early screening fuzzy positioning and six-direction coordinate precise positioning, and then forms a vacuum state in the chamber and heats the substrate to the melting point of indium. The melting point of indium is 156.6℃ at standard atmospheric pressure. According to the Clausius-Clapeyron equation, the melting point is affected by pressure. However, for indium metal, the change of the melting point can be ignored, so when the air pressure is greater than or equal to 5E-2Pa, the melting point is 157 degrees. After keeping for 1 to 3 minutes, when the indium ball changes from solid to liquid, due to the large surface tension of liquid indium, about 559mN / m, it tends to form a spherical droplet. In a vacuum environment, the melted indium is first prevented from being oxidized. Under the constraint of the base material and the pattern, the indium morphology will remain relatively consistent with the indium ball morphology after the ball forming process. And the vapor pressure of indium is relatively low, about 10E-10mbar at 156.6℃, and the evaporation amount is very small in a short time, which can be ignored. After the tungsten-platinum alloy cold needle punctures for 1 minute and is lifted up, the melted indium ball is adsorbed on the tungsten-platinum alloy cold needle by using the temperature gradient difference and is below the melting point, so that the large indium ball can be completely or mostly removed. After the substrate cools down, the remaining indium ball constraint solidification can maintain a relatively complete form.

[0094] The beneficial effects of the present application are as follows:

[0095] The present application removes a single indium ball in the readout circuit array by positioning, heating and cold extraction, avoids the occurrence of readout circuit scrapping and photosensitive layer cracking, improves the utilization rate of readout circuit and the yield of large-area device, and reduces the cost.

[0096] The various embodiments in the specification are described in a progressive manner, and each embodiment focuses on the difference from other embodiments. The same or similar parts between the various embodiments can be referred to each other.

[0097] The principles and implementation manners of the present application are described by using specific examples in the present application, and the above examples are only used to help understand the method of the present application and its core idea; meanwhile, for the general technical personnel in the art, the specific implementation manners and application ranges will be changed according to the idea of the present application. In conclusion, the content of the present specification should not be understood as the limitation of the present application.

Claims

1. A method for removing a single indium ball within an indium array, characterized in that, include: The original readout circuit after sphere formation is placed on a metallographic microscope, and the indium sphere regions on the original readout circuit whose indium sphere morphology does not conform to the preset indium sphere parameter range are screened to obtain fuzzy positioning data; Based on the fuzzy positioning data, the target anomalous indium sphere is measured using a laser focusing device to obtain height data; The thickness of the readout circuit is measured using a non-contact thickness gauge to obtain the first thickness data; The electrode thickness of the pad in the readout circuit fabrication process is measured using a step meter to obtain second thickness data. The first thickness data and the second thickness data are added together to obtain the final circuit thickness data. The original readout circuit is placed in the upper left corner of the groove on the silicon carbide substrate fixture platform; Based on the fuzzy positioning data, the target abnormal indium sphere on the original readout circuit and the crosshairs on the operating computer are aligned by adjusting the lens visual window; The descent height information is obtained by adding the height data, the final circuit thickness data, and the preset vertical axis coordinates of the robotic arm. Close the chamber cover where the original readout circuit is located, evacuate the vacuum chamber where the original readout circuit is located to a vacuum level of 5E-2Pa or higher, and heat the silicon carbide substrate clamping platform to 157°C; After the original readout circuit is heated for a preset heating time, if the pressure value in the vacuum chamber does not exceed 1E-1Pa, then the tungsten-platinum alloy cold needle is used to puncture the abnormal indium ball of the target according to the descent height information. After the target abnormal indium ball is punctured for a preset puncture time, the target abnormal indium ball is peeled off using the tungsten-platinum alloy cold needle to obtain the optimized readout circuit. After the target abnormal indium ball is peeled off, the heating of the silicon carbide substrate clamping platform is stopped, the silicon carbide substrate clamping platform is cooled to room temperature, nitrogen is filled into the vacuum chamber, and the optimized readout circuit is removed after the gas pressure in the vacuum chamber returns to atmospheric pressure.

2. The method for removing a single indium ball within an indium array according to claim 1, characterized in that, The original readout circuit after sphere formation is placed under a metallographic microscope. Regions on the original readout circuit whose indium sphere morphology does not conform to the preset indium sphere parameter range are screened to obtain fuzzy positioning data, including: After the target indium pillar is fabricated in the original readout circuit, the target indium pillar is transformed into spherical indium using an indium pillar sphericalization process; The original readout circuit is placed on a metallographic microscope, and the morphology of the indium spheres on the surface of the original readout circuit is inspected using the metallographic microscope at a magnification of 10 to 50. Indium sphere areas that do not conform to the preset indium sphere parameter range are marked as the target abnormal indium spheres, and the location of the target abnormal indium spheres is recorded to obtain the fuzzy positioning data.

3. The method for removing a single indium ball within an indium array according to claim 2, characterized in that, Based on the fuzzy positioning data, a laser focusing device is used to measure the height of the target anomalous indium sphere, including: The original readout circuit is placed on a laser confocal microscope, and the location of the target abnormal indium sphere is located using the laser confocal microscope under a 10x objective lens based on the fuzzy positioning data. The height data was obtained by laser measurement of the target anomalous indium sphere using a laser confocal microscope under a 50x objective lens.

4. The method for removing a single indium ball within an indium array according to claim 3, characterized in that, The original readout circuit is placed in the upper left corner of a groove on a silicon carbide substrate fixture platform, including: The original readout circuit containing the target abnormal indium ball is placed in the upper left corner of the groove on the silicon carbide substrate clamping platform, and the silicon carbide substrate clamping platform is fixed using a fixing module. The initial position of the robotic arm is located at the upper left corner of the silicon carbide substrate clamping platform, and the upper left corner of the silicon carbide substrate clamping platform is set as the origin. Based on the origin, with 1 To achieve the desired mesh accuracy, the grooves on the silicon carbide substrate fixture platform are divided into horizontal and vertical coordinates.

5. The method for removing a single indium ball within an indium array according to claim 4, characterized in that, Based on the fuzzy positioning data, the target abnormal indium sphere on the original readout circuit and the crosshairs on the operating computer are aligned by adjusting the lens vision window, including: Based on the fuzzy positioning data, the location of the target anomalous indium sphere is determined using a 20x magnification lens; Use a 50x or 100x lens to align the crosshairs on the operating computer with the center of the target abnormal indium sphere.

6. The method for removing a single indium ball within an indium array according to claim 5, characterized in that, Close the chamber cover containing the original readout circuit, evacuate the vacuum chamber containing the original readout circuit to a level above 5E-2Pa, and heat the silicon carbide substrate clamping platform to 157°C, including: When the pressure in the vacuum chamber exceeds 1E-1Pa, an error message is sent to the staff.

7. A single indium ball removal system within an indium array, characterized in that, include: Grounding anti-static components, silicon carbide substrate clamping platform, fixing module, robotic arm, guide rail, stepper motor, reducer, multi-magnification microscope, tungsten-platinum alloy cold needle fixing platform, tungsten-platinum alloy cold needle, liquid cooling circulation module, vacuum chamber and operating computer; The grounding anti-static component is connected to the silicon carbide substrate clamping platform; the fixing module is placed on the silicon carbide substrate clamping platform; the robotic arm is placed on the guide rail; the robotic arm is connected to the stepper motor and the reducer respectively; the multi-magnification microscope, the tungsten-platinum alloy cold needle fixing platform, and the tungsten-platinum alloy cold needle are all fixed on the robotic arm; the liquid cooling circulation module is connected to the silicon carbide substrate clamping platform; the vacuum chamber and the silicon carbide substrate clamping platform form a sealed space; the operating computer is connected to the robotic arm, the stepper motor, the reducer, the multi-magnification microscope, and the tungsten-platinum alloy cold needle respectively; The silicon carbide substrate clamping platform is used to place the readout circuit to be optimized; the fixing module is used to fix the silicon carbide substrate clamping platform; the robotic arm is used to move the tungsten-platinum alloy cold needle to the target indium ball position; and the multi-magnification microscope is used to locate the indium ball to be removed on the readout circuit.

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