Electronic device and manufacturing method thereof

Abstract

The invention provides an electronic device and a manufacturing method of the electronic device. The electronic device comprises a circuit substrate, a light absorption layer and an electronic element. The light absorption layer is arranged on the circuit substrate, and the light absorption layer comprises an opening. The electronic component is arranged in the opening and electrically connected with the circuit substrate. In a cutaway view of the electronic device, the outline of the side wall of the opening is provided with at least one arc-shaped edge, and the inclination angle between the extension line of the side wall of the opening and the horizontal line is between 75 degrees and 105 degrees. The electronic device provided by the invention has the advantages that the process cost can be reduced, and the reliability is relatively good.

Description

Technical Field

[0001] This disclosure relates to an electronic device and a method for manufacturing the electronic device. Background Technology

[0002] In existing electronic devices, reflectivity is reduced by setting a light-shielding layer, and the placement space of electronic components is defined by setting a pixel definition layer. If the aforementioned light-shielding layer and pixel definition layer can be integrated into one layer (hereinafter referred to as a light-absorbing layer), the number of process steps in forming the electronic device can be reduced, thereby improving the process efficiency of the electronic device and / or reducing the process cost of the electronic device.

[0003] However, during the formation of the light-absorbing layer, its relatively thick thickness and / or relatively low reflectivity will result in relatively poor light sensitivity at its bottom. Therefore, the formed light-absorbing layer will have a distinct inverted trapezoidal structure, which leads to a decrease in the reliability of electronic devices due to its unstable structure. Summary of the Invention

[0004] Some embodiments disclosed herein are directed to an electronic device that has reduced manufacturing costs and relatively good reliability.

[0005] An electronic device according to some embodiments of the present disclosure includes a circuit board, a light-absorbing layer, and electronic components. The light-absorbing layer is disposed on the circuit board and includes openings. Electronic components are disposed in the openings and electrically connected to the circuit board. In a cross-sectional view of the electronic device, the profile of the sidewall of the opening has at least one arcuate edge, and the extension line of the sidewall of the opening has an angle of inclination between 75 degrees and 105 degrees relative to the horizontal line.

[0006] Some embodiments disclosed herein pertain to a method for manufacturing an electronic device, which can improve process efficiency and enhance the reliability of the resulting electronic device.

[0007] A method for manufacturing an electronic device according to some embodiments of the present disclosure includes the following steps: Providing a circuit substrate. Coating a photoresist onto the circuit substrate. Measuring a first optical characteristic value of the photoresist before exposure. Exposing the photoresist. Measuring a second optical characteristic value of the photoresist after exposure. Patterning the photoresist to form openings. The patterning time of the photoresist is adjusted based on the difference between the first and second optical characteristic values.

[0008] In summary, in the electronic device and manufacturing method disclosed herein, the light-absorbing layer, which has relatively low reflectivity and defines the placement space for electronic components, can be formed using a relatively small number of process steps, thereby improving the process efficiency and / or reducing the process cost of the electronic device disclosed herein. Furthermore, the light-absorbing layer in the electronic device disclosed herein can maintain a relatively stable shape structure even with a desired thickness (the extension lines of the sidewalls of the openings have an inclination angle between 75 and 105 degrees relative to the horizontal line), thereby improving the reliability of the electronic device disclosed herein. Attached Figure Description

[0009] Figure 1 This is a partial cross-sectional schematic diagram of the electronic device according to the first embodiment of this disclosure;

[0010] Figure 2A Based on Figure 1 An enlarged top view of the first embodiment of region R;

[0011] Figure 2B Based on Figure 1 An enlarged top view of the second embodiment of region R;

[0012] Figure 2C Based on Figure 1 An enlarged top view of the third embodiment of region R;

[0013] Figure 2D Based on Figure 1 An enlarged top view of the fourth embodiment of region R;

[0014] Figure 2E Based on Figure 1 An enlarged top view of the fifth embodiment of region R;

[0015] Figure 3 This is a partial cross-sectional schematic diagram of an electronic device according to a second embodiment of the present disclosure. Detailed Implementation

[0016] Reference will now be made in detail to exemplary embodiments of the invention, examples of which are illustrated in the accompanying drawings. Wherever possible, the same element references are used in the drawings and description to denote the same or similar parts.

[0017] This disclosure can be understood by referring to the following detailed description in conjunction with the accompanying drawings. It should be noted that, for ease of understanding and for the sake of brevity, many of the drawings in this disclosure depict only a portion of the electronic device, and certain components in the drawings are not drawn to scale. Furthermore, the number and dimensions of the components in the drawings are for illustrative purposes only and are not intended to limit the scope of this disclosure.

[0018] Throughout this disclosure and in the appended claims, certain terms are used to refer to specific elements. Those skilled in the art will understand that electronic device manufacturers may use different names to refer to the same element. This document is not intended to distinguish between elements that have the same function but different names. In the following description and claims, words such as “comprising,” “containing,” and “having” are open-ended terms and should therefore be interpreted as “containing but not limited to…”. Thus, when the terms “comprising,” “containing,” and / or “having” are used in the description of this disclosure, they specify the presence of the corresponding feature, area, step, operation, and / or component, but do not exclude the presence of one or more of the corresponding feature, area, step, operation, and / or component.

[0019] The directional terms used herein, such as "up," "down," "front," "back," "left," and "right," are for reference only when referring to the accompanying drawings. Therefore, the directional terms used are illustrative and not intended to limit this disclosure. In the accompanying drawings, each figure illustrates general features of the methods, structures, and / or materials used in specific embodiments. However, these figures should not be construed as defining or limiting the scope or nature covered by these embodiments. For example, for clarity, the relative dimensions, thicknesses, and locations of various films, regions, and / or structures may be reduced or enlarged.

[0020] When a component (e.g., a membrane or region) is referred to as "on another component," it can be directly on that component, or there may be other components between them. Conversely, when a component is referred to as "directly on another component," there are no components between them unless otherwise specified in the specification. Furthermore, when a component is referred to as "on another component," the two components are vertically related in the planar view, and this component can be above or below the other component, depending on the orientation of the device.

[0021] The terms “equal to” or “same as”, “substantially” or “approximately” are generally interpreted as being within 20% of a given value or range, or as being within 10%, 5%, 3%, 2%, 1% or 0.5% of a given value or range.

[0022] The ordinal numbers used in the specification and claims, such as "first," "second," etc., to modify elements, do not in themselves imply or represent any prior ordinal number of that element (or those elements), nor do they represent the order of one element with another, or the order of manufacturing processes. The use of these ordinal numbers is solely to clearly distinguish one named element from another element with the same name. The claims and specification may not use the same terminology; therefore, a first element in the specification may be a second element in the claims.

[0023] It should be understood that the features in the following embodiments can be replaced, recombined, or mixed to complete other embodiments without departing from the spirit of this disclosure. Features between embodiments can be arbitrarily mixed and combined as long as they do not violate the spirit of the invention or conflict with it.

[0024] The electrical connection or connection described in this disclosure can refer to a direct connection or an indirect connection. In the case of a direct connection, the endpoints of the two circuit components are directly connected or connected to each other by a conductor segment. In the case of an indirect connection, there is a switch, diode, capacitor, inductor, other suitable component, or combination of the above components between the endpoints of the two circuit components, but not limited to these.

[0025] In this disclosure, the thickness, length, width, and area can be measured using an optical microscope, and the thickness can be measured from a cross-sectional image using an electron microscope, but these methods are not limited to these. Furthermore, any two values ​​or directions used for comparison may have a certain degree of error. If the first value equals the second value, it implies an error of approximately 10% between the two values; if the first direction is perpendicular to the second direction, the angle between the first and second directions may be between 80 and 100 degrees; if the first direction is parallel to the second direction, the angle between the first and second directions may be between 0 and 10 degrees.

[0026] The electronic devices described herein can be applied to display devices, light-emitting devices, backlight devices, splicing devices, virtual reality devices, augmented reality devices, antenna devices, or sensing devices, but are not limited thereto. The electronic devices can be bendable or flexible. The electronic devices may include, for example, liquid crystal, light-emitting diodes (LEDs), fluorescence, phosphorescence, other suitable display media, or combinations thereof, but are not limited thereto. Display devices can be non-self-emissive or self-emissive. Antenna devices can be liquid crystal type antenna devices or non-liquid crystal type antenna devices, and sensing devices can be sensing capacitance, light, heat, or ultrasound, but are not limited thereto. The electronic devices may include, for example, passive and active electronic components, such as capacitors, resistors, inductors, diodes, and transistors. Diodes may include light-emitting diodes or photodiodes. Light-emitting diodes (LEDs) may include, for example, organic light-emitting diodes (OLEDs), miniLEDs, microLEDs, or quantum dot LEDs, but are not limited thereto. Splicing devices may be, for example, display splicing devices or antenna splicing devices, but are not limited thereto. It should be noted that electronic devices may be any arrangement or combination of the foregoing, but are not limited thereto. Furthermore, the shape of the electronic device may be rectangular, circular, polygonal, with curved edges, or other suitable shapes. The electronic device may have peripheral systems such as a drive system, control system, and light source system to support display devices, antenna devices, wearable devices (e.g., augmented reality or virtual reality), automotive devices (e.g., automotive windshields), or splicing devices.

[0027] Figure 1 This is a partial cross-sectional schematic diagram of an electronic device according to the first embodiment of this disclosure.

[0028] Please refer to Figure 1 In this embodiment, the electronic device 10a includes a circuit board 100, a light-absorbing layer 200, and electronic components 300, which can be formed by performing the following steps, but this disclosure is not limited thereto.

[0029] Step (1): Provide a circuit board 100. In some embodiments, the circuit board 100 may include, for example, Figure 1 The substrate SB1 and the connection structure CS are shown, but this disclosure is not limited thereto.

[0030] The substrate SB1 may be made of, for example, glass, plastic, or a combination thereof. For instance, the substrate SB1 may be made of quartz, sapphire, silicon (Si), germanium (Ge), silicon carbide (SiC), gallium nitride (GaN), silicon germanium (SiGe), polymethyl methacrylate (PMMA), polycarbonate (PC), polyimide (PI), polyethylene terephthalate (PET), or other suitable materials or combinations thereof, and this disclosure is not limited thereto.

[0031] The connection structure CS is disposed, for example, on the substrate SB1. In some embodiments, the connection structure CS can be formed by performing the processes described below, but this disclosure is not limited thereto.

[0032] First, a conductive layer M1 is formed on the substrate SB1. In some embodiments, the conductive layer M1 can be formed by performing the following processes. For example, the conductive layer can be formed on the substrate SB1 first by a sputtering process, and then the conductive layer M1 can be formed by a photolithography process. In some embodiments, the material of the conductive layer M1 may include copper or other suitable metals, but this disclosure is not limited thereto.

[0033] Next, an insulating layer IL1 is formed on the substrate SB1. In some embodiments, the insulating layer IL1 can be formed by performing the following processes. For example, an insulating material layer (not shown) covering the conductive layer M1 can be formed first by performing a physical vapor deposition process or a chemical vapor deposition process, and then a patterning process can be performed on this insulating material layer to form an insulating layer IL1 having a plurality of openings OP1, wherein these openings OP1 expose a portion of the conductive layer M1. In some embodiments, the material of the insulating layer IL1 may include inorganic materials (e.g., silicon oxide, silicon nitride, or silicon oxynitride), but this disclosure is not limited thereto. In some embodiments, the insulating layer IL1 may be a single-layer structure or a multi-layer structure, and this disclosure is not limited thereto.

[0034] In this embodiment, the connection structure CS may further include a thin-film transistor (not shown), wherein the thin-film transistor is electrically connected to the conductive layer M1. More specifically, in this embodiment, a process for forming a thin-film transistor (not shown) may also be performed on the substrate SB1. For example, a buffer layer (not shown), a semiconductor layer (not shown), a first insulating layer (not shown), a gate (not shown), a second insulating layer (not shown), and a source (not shown) and a drain (not shown) may be sequentially formed on the substrate SB1 to form a thin-film transistor. More specifically, the thin-film transistor may, for example, include the aforementioned gate, source, drain, and semiconductor layer. The gate, for example, partially overlaps with the semiconductor layer in the top view z direction of the electronic device 10a, wherein the region where the semiconductor layer and the gate overlap can be considered a channel region, and the semiconductor layer may have a source region and a drain region located on opposite sides of the channel region. The source and drain are, for example, separate from each other and each electrically connected to the semiconductor layer. In some embodiments, the material of the semiconductor layer may include amorphous silicon, low-temperature polycrystalline silicon (LTPS), metal oxide, other suitable materials, or combinations thereof, wherein the metal oxide may include indium gallium zinc oxide (IGZO). In this embodiment, the source and drain may be electrically connected to the source and drain regions of the semiconductor layer respectively through vias (not shown) penetrating the first and second insulating layers, but this disclosure is not limited thereto. Although this embodiment uses a top-gate thin-film transistor as an example, this disclosure is not limited thereto.

[0035] In this embodiment, multiple cycles of the above-described method for forming the conductive layer and the insulating layer can be repeated to form a layer as described above. Figure 1 The connection structure CS shown can serve as a wiring layer for electronic component 300 to provide the required conductive transmission path. For example, as Figure 1 As shown, the connection structure CS may include a conductive layer M1, an insulating layer IL1 with multiple openings OP1, a conductive layer M2, an insulating layer IL2 with multiple openings OP2, a conductive layer M3, and an insulating layer IL3 with multiple openings OP3, but this disclosure is not limited thereto. It is worth noting that the materials comprising conductive layers M2 and M3 are, for example, the same or similar to the materials comprising conductive layer M1, and the materials comprising insulating layers IL2 and IL3 are, for example, the same or similar to the materials comprising insulating layer IL1.

[0036] Step (2): Apply photoresist to the circuit board 100.

[0037] In this embodiment, the photoresist material includes a photoresist composition and a photochromic material. The photoresist composition may, for example, include a suitable resin (e.g., siloxane, acrylic, or polyimide), a photosensitive component, and a solvent to provide a light-blocking effect; this disclosure is not limited thereto. The photochromic material may, for example, include a suitable organic compound. For instance, the photochromic material may include aralkyl compounds, stilbenes, nitrones, fulgides, spiropyrans, naphthopyrans, spiro-oxazines, quinones, or combinations thereof; this disclosure is not limited thereto. In some embodiments, the thickness of the photoresist is between 7.5 μm and 10.5 μm; this disclosure is not limited thereto.

[0038] Step (3): Measure the first optical characteristic value of the photoresist before exposure.

[0039] In some embodiments, the first optical characteristic value of the photoresist before exposure can be measured using a macroscopic inspection machine, a colorimeter, a spectrometer, or other suitable instruments. After measuring the first optical characteristic value of the photoresist before exposure, it can be represented using the CIE 1931 Yxy color space. For example, the chromaticity of the color of the photoresist before exposure can be described by two parameters x and y, and the luminance of the color of the photoresist before exposure can be described by Y in the trichromatic stimulus values, but this disclosure is not limited thereto. In this embodiment, the first optical characteristic value is the luminance value (Y), but this disclosure is not limited thereto.

[0040] Step (4): Expose the photoresist.

[0041] In some embodiments, the photoresist can be exposed using an exposure machine, wherein the exposure energy is 150 mJ / cm². 2 ~350mJ / cm 2 The photoresist is exposed under certain conditions, but this disclosure is not limited thereto. Since the photoresist in this embodiment includes a photochromic material, the original color of the photoresist can be changed after exposure, which can reduce the weak exposure energy received by the bottom of the photoresist during exposure.

[0042] In some embodiments, the photoresist may be pre-baked before exposure, but this disclosure is not limited thereto.

[0043] Step (5): Measure the second optical characteristic value of the photoresist after exposure.

[0044] In some embodiments, the second optical characteristic value of the photoresist after exposure can be measured using a macroscopic inspection machine, a colorimeter, a spectrometer, or other suitable instruments. After measuring the second optical characteristic value of the photoresist after exposure, it can also be expressed using the CIE 1931 Yxy color space, which will not be elaborated here. In this embodiment, the second optical characteristic value is the luminance value (Y), but this disclosure is not limited thereto.

[0045] In this embodiment, the difference between the first optical characteristic value and the second optical characteristic value is related to the exposure energy in the exposure step. Specifically, since the photoresist includes a photochromic material, the photoresist can have different chromaticities after being irradiated with light of different exposure energies. By observing and recording the difference between the first optical characteristic value and the second optical characteristic value, the degree of curing of the photoresist can be predicted. Based on this, in this embodiment, the process parameters used in the subsequent patterning of the photoresist in step (6) can be determined by measuring the difference between the brightness value of the photoresist before exposure (first optical characteristic value) and the brightness value of the photoresist after exposure (second optical characteristic value).

[0046] Step (6): Pattern the photoresist to create openings in the photoresist.

[0047] Patterning photoresist can be achieved, for example, through a development process, but this disclosure is not limited thereto. In this embodiment, after step (5), the difference between the first optical characteristic value and the second optical characteristic value is compared with a preset value to determine the development time. Specifically, after measuring the second optical characteristic value of the photoresist after exposure, a developer can be provided to the photoresist using a developer, and the break point, which is a multiple of the development time, is determined based on the comparison results described above. It is worth noting that the break point is defined, for example, as the time it takes for the unpolymerized portion of the photoresist to be completely removed from the developer.

[0048] Step (7): Curing the photoresist to form a light-absorbing layer 200.

[0049] In this embodiment, the photoresist undergoes a post-bake process to cure it. For example, the photoresist can be post-baked at a temperature of 200°C to 300°C for 30 to 60 minutes, but this disclosure is not limited thereto. In some embodiments, the optical density value of the cured photoresist (light-absorbing layer 200) is between 1.5 and 5. In other embodiments, the optical density value of the cured photoresist (light-absorbing layer 200) is between 2 and 5. That is, the light-absorbing layer 200 in this embodiment can have a relatively good light-blocking effect.

[0050] Based on this, in this embodiment, the development time in the development process of step (6) and the process conditions in the post-baking process of step (7) can be determined by comparing the difference between the first optical characteristic value and the second optical characteristic value with a preset value. For example, this preset value can be, for example, the black light-absorbing layer 200 with a relatively good curing degree obtained after the photoresist undergoes the exposure process of step (4), the development process of step (6), and the post-baking process of step (7). By comparing the difference between the first optical characteristic value and the second optical characteristic value with the preset value, the process conditions in the development process of step (6) and the post-baking process of step (7) can be determined after the photoresist undergoes the exposure process of step (4) with light of different exposure energies. For example, after the photoresist is irradiated with light of relatively low exposure energy in the exposure process of step (4), a development process with a relatively short development time can be performed in step (6), and a post-baking process with a relatively long curing time can be performed in step (7) to obtain a black light-absorbing layer 200 with a relatively good curing degree.

[0051] Table 1 below is an example of the process parameters for the photoresist in the exposure process of step (4), the development process of step (6), and the post-baking process of step (7), but this disclosure is not limited thereto.

[0052] [Table 1]

[0053]

[0054] (Note: X is 250mJ / cm) 2 )

[0055] Based on the above, the development time in the development process in step (6) and the process conditions in the post-baking process in step (7) can be adjusted by comparing the difference between the first optical characteristic value and the second optical characteristic value with a preset value, so as to obtain a light-absorbing layer 200 with substantially the same degree of curing and / or an optical density value between 1.5 and 5 (or 2 and 5).

[0056] Step (8): Place the electronic component 300 into the opening of the cured photoresist.

[0057] In detail, in this embodiment, the electronic component 300 is disposed in the opening 200_OP of the light-absorbing layer 200. In some embodiments, before disposing the electronic component 300 in the opening 200_OP of the light-absorbing layer 200, a bonding pad PAD can be formed in the opening 200_OP of the light-absorbing layer 200 as a component of the circuit board 100, wherein the bonding pad PAD is electrically connected to the conductive layer M3 in the connection structure CS. Based on this, the electronic component 300 subsequently disposed in the opening 200_OP of the light-absorbing layer 200 can be electrically connected to the connection structure CS through the bonding pad PAD. In some embodiments, the electronic component 300 includes a red light-emitting diode, a green light-emitting diode, and / or a blue light-emitting diode. For example, in this embodiment, the electronic component 300 includes a red light-emitting diode 300R, a green light-emitting diode 300G, and a blue light-emitting diode 300B, but this disclosure is not limited thereto.

[0058] Based on the above, the light-absorbing layer 200 formed in steps (2) to (7) can simultaneously have relatively low reflectivity and the characteristic of defining the placement space of electronic components 300, which can improve the process efficiency of electronic device 10a and / or reduce the process cost of electronic device 10a.

[0059] Step (9): Assemble the circuit board 100 and the opposing board 400a

[0060] The opposing substrate 400a is disposed opposite to the circuit board 100, for example. Specifically, in this embodiment, the electronic components 300 on the assembled circuit board 100 face the opposing substrate 400a. In some embodiments, the circuit board 100 and the opposing substrate 400a can be assembled using an adhesive layer AL. Specifically, the adhesive layer AL is disposed, for example, between the circuit board 100 and the opposing substrate 400a in the top view z direction of the electronic device 10a, so that the circuit board 100 and the opposing substrate 400a are bonded to each other.

[0061] Additionally, in some embodiments, a filling layer FL may be formed in the openings of the light-absorbing layer 200 before the paired circuit board 100 and the opposing substrate 400a. The filling layer FL may be disposed adjacent to or around the electronic component 300, for example, to serve to fix or protect the electronic component 300.

[0062] Thus, the fabrication of the electronic device 10a of this embodiment is completed, but the method of fabricating the electronic device 10a disclosed herein is not limited thereto.

[0063] The following will refer to Figure 1 as well as Figures 2A to 2EThis embodiment briefly describes the structure of the electronic device 10a, wherein... Figures 2A to 2E Each for themselves Figure 1 Different embodiments of region R of the electronic device 10a are shown, but this disclosure is not limited thereto.

[0064] Please refer to Figure 1 In this embodiment, the electronic device 10a has a single-board structure. Specifically, the electronic device 10a in this embodiment includes a circuit board 100, a light-absorbing layer 200, and electronic components 300.

[0065] The circuit board 100 may include, for example, a substrate SB1, a connection structure CS, and a bonding pad PAD. The description of the substrate SB1, the connection structure CS, and the bonding pad PAD can be found in the above embodiments and will not be repeated here. It is worth noting that the circuit board 100 in this embodiment may be a thin-film transistor array substrate. More specifically, the circuit board 100 may also include, for example, the aforementioned thin-film transistors (not shown), but this disclosure is not limited thereto. In other embodiments, the circuit board 100 may be provided with a plurality of micro-integrated circuits (micro ICs), and the electronic component 300 may be driven by the micro-integrated circuits.

[0066] The light-absorbing layer 200 is disposed, for example, on the circuit board 100. In this embodiment, the material of the light-absorbing layer 200 includes a photochromic material, and examples of photochromic materials can be found in the above embodiments, which will not be repeated here. By including a photochromic material in the light-absorbing layer 200, the photochromic mechanism of the photochromic material can be used to enhance the photosensitivity of the bottom of the light-absorbing layer 200 during the formation process, so that the sidewalls 200S of the formed light-absorbing layer 200 can have the following specific contour, thereby improving the stability of the light-absorbing layer 200, which will not be repeated here. In this embodiment, the material of the light-absorbing layer 200 also includes a photoresist composition, and examples of photoresist compositions can be found in the above embodiments, which will not be repeated here. Since the material of the light-absorbing layer 200 includes the above-mentioned photochromic material and photoresist composition, the optical density value of the light-absorbing layer 200 can be between 1.5 and 5 (or 2 and 5). That is, the light-absorbing layer 200 in this embodiment can have a relatively good light-blocking effect.

[0067] In this embodiment, the light-absorbing layer 200 includes a plurality of openings 200_OP, wherein the plurality of openings 200_OP of the light-absorbing layer 200 are formed by performing the above-described exposure process and patterning process.

[0068] To elaborate further, please refer to Figures 2A to 2D , Figures 2A to 2D Each of the multiple openings 200_OP in the light-absorbing layer 200 is shown at an exposure energy of 200 mJ / cm². 2 250mJ / cm2 300mJ / cm 2 and 350mJ / cm 2 It is formed by exposing the photoresist under certain conditions.

[0069] In some embodiments, Figures 2A to 2D In the cross-sectional view shown, the profile of the sidewall 200S of the opening 200_OP has at least one arcuate edge. In this embodiment, the sidewall 200S of the opening 200_OP of the light-absorbing layer 200 presents a cubic plane curve and has an inflection point. Specifically, the sidewall 200S of the opening 200_OP of the light-absorbing layer 200 has, for example, a first arcuate edge 200R1 and a second arcuate edge 200R2, wherein the first arcuate edge 200R1 and the second arcuate edge 200R2 are connected to each other and each has a protrusion 200B and a concave point 200C, and an inflection point 200I is located between the first arcuate edge 200R1 and the second arcuate edge 200R2.

[0070] In some embodiments, Figures 2A to 2D In the cross-sectional view shown, the extension line 200EL of the sidewall 200S of the opening 200_OP has an angle θ between 75 and 105 degrees relative to the horizontal line. In this embodiment, the extension line 200EL of the sidewall 200S is defined as finding two points d1 and d2 extending 1 μm from the inflection point 200I in the top view direction z of the electronic device 10a and in the opposite direction, and then connecting points d1 and d2 with a straight line. Furthermore, the horizontal line is, for example, a direction perpendicular to the top view direction z of the electronic device 10a.

[0071] In this embodiment, the position (height H1) of the inflection point 200I is located at 0.4 to 0.6 times the height H of the light-absorbing layer 200, the position (height H2) of the convex point 200B is located at 0.5 to 0.9 times the height H of the light-absorbing layer 200, and the position (height H3) of the concave point 200C is located at 0.1 to 0.4 times the height H of the light-absorbing layer 200. In some embodiments, the height H of the light-absorbing layer 200 is between 7.5 μm and 10.5 μm, but this disclosure is not limited thereto. In other embodiments, the height H of the light-absorbing layer 200 is between 5 μm and 10.5 μm, but this disclosure is not limited thereto. It is worth noting that the height H of the light-absorbing layer 200 is, for example, the height measured from the bottom to the top of the light-absorbing layer 200.

[0072] In other embodiments, the profile of the sidewall 200S of the opening 200_OP may be composed of three or more sets of slopes and two or more sets of included angles. Specifically, in... Figure 2EThe sectional view shown indicates that the profile of the sidewall 200S of the opening 200_OP is composed of 5 sets of slopes S′1, S′2, S′3, S′4, S′5 and 4 sets of included angles C′1, C′2, C′3, C′4. Among them, included angle C′1 is the angle between slope S′1 and slope S′2, included angle C′2 is the angle between slope S′2 and slope S′3, included angle C′3 is the angle between slope S′3 and slope S′4, and included angle C′4 is the angle between slope S′4 and slope S′5, but this disclosure is not limited thereto.

[0073] Electronic component 300 is disposed, for example, in an opening 200_OP in light-absorbing layer 200 and electrically connected to circuit substrate 100. In some embodiments, electronic component 300 includes a light-emitting element, which may include a diode, an organic light-emitting diode (OLED), an inorganic light-emitting diode (LED), such as a mini LED or micro LED, a quantum dot (QD), a quantum dot LED (QDLED), fluorescence, phosphorescence, other suitable materials, or combinations of the above materials. For example, electronic component 300 may include a light-emitting diode. In this embodiment, electronic component 300 is a flip-chip micro LED, but this disclosure is not limited thereto. Electronic component 300 may include, for example, an electrode 310, wherein electronic component 300 is bonded to a bonding pad PAD through the electrode 310, so that it can be electrically connected to a thin-film transistor of circuit substrate 100 through the bonding pad PAD, but this disclosure is not limited thereto. In some embodiments, the bonding pad PAD may include a bump PAD1 and a solder PAD2, wherein the solder PAD2 is disposed on the bump PAD1, and at least a portion of the bump PAD1 is electrically connected to the connection structure CS. Based on this, the electronic component 300 can be electrically connected to the thin-film transistor of the circuit board 100 via the bonding pad PAD. The material of the bump PAD1 may include, for example, metal or alloy. For example, the material of the bump PAD1 may be an alloy of gold and nickel, which can be formed by an electroless nickel immersion gold (ENIG) process, but this disclosure is not limited thereto. The material of the solder PAD2 may include, for example, tin, but this disclosure is not limited thereto. The electronic component 300 may also be a vertical micro-light-emitting diode. In this embodiment, the electronic component 300 may include a red light-emitting diode 300R, a green light-emitting diode 300G, and a blue light-emitting diode 300B, but this disclosure is not limited thereto. Electronic component 300 may be electrically connected, for example, to a thin-film transistor (not shown) in circuit board 100 to emit light under the control of the thin-film transistor. In some embodiments, electronic component 300 may each emit various suitable colors of light (e.g., red, green, blue, white, etc.), IR light, or UV light, but this disclosure is not limited thereto.

[0074] In this embodiment, the electronic device 10a further includes a counter substrate 400a, an adhesive layer AL, and a filler layer FL.

[0075] The opposing substrate 400a is disposed opposite to the circuit board 100, for example. The opposing substrate 400a may include, for example, anti-reflective, dustproof, scratch-resistant, and water / vapor intrusion effects to reduce the impact of the external environment on the internal components of the electronic device 10a, and may, for example, be light-transmitting. In some embodiments, the material of the opposing substrate 400a may include glass, wherein the type or composition of the glass is not particularly limited, and it may be, for example, aluminosilicate glass, lithium aluminosilicate glass, soda-lime silicate glass, aluminosilicate glass, quartz glass, or other light-transmitting glass, but this disclosure is not limited thereto. In other embodiments, the material of the opposing substrate 400a may include organic materials, such as resin, acrylic, polyimide, or other suitable organic materials. In other embodiments, the opposing substrate 400a may include a Bragg reflective layer to achieve an anti-reflective effect. In other embodiments, the opposing substrate 400a may include an anti-fouling layer, which may include, for example, a fluorine-containing compound.

[0076] An adhesive layer AL is disposed, for example, in the plan view z of the electronic device 10a between the circuit board 100 and the opposing substrate 400a to bond the circuit board 100 and the opposing substrate 400a together. In some embodiments, the material of the adhesive layer AL may include optically clear adhesive (OCA) or optically clear resin (OCR), such as acrylic resin, silicone resin, epoxy resin, or other suitable materials or combinations thereof, but this disclosure is not limited thereto. In some embodiments, in addition to the function of bonding the circuit board 100 and the opposing substrate 400a together, the adhesive layer AL may also have water and oxygen blocking properties, protective properties, or other properties, but this disclosure is not limited thereto.

[0077] The filler layer FL is disposed, for example, in the opening 200_OP of the light-absorbing layer 200, and is disposed, for example, adjacent to or surrounding the electronic component 300. The filler layer FL may be used, for example, to fix or protect the electronic component 300. In some embodiments, the filler layer FL may comprise a transparent material, a non-transparent material, or a combination thereof. For example, the material of the filler layer FL may include epoxy resin, acrylic, other suitable materials, or combinations thereof, but this disclosure is not limited thereto.

[0078] Figure 3 This is a partial cross-sectional schematic diagram of the electronic device according to the second embodiment of this disclosure. It should be noted that... Figure 3 The embodiments can be used Figure 1 The component references and partial contents of the embodiments are as follows, wherein the same or similar references are used to represent the same or similar components, and the description of the same technical content is omitted.

[0079] Please refer to Figure 3In this embodiment, the electronic device 10b has a dual-plate structure. Specifically, the main difference between the electronic device 10b and the electronic device 10a in this embodiment lies in the construction of the opposing substrate 400b.

[0080] In this embodiment, the electronic device 10b includes a circuit board 100, a light-absorbing layer 200, an electronic component 300, a counter substrate 400b, an adhesive layer AL, and a filling layer FL. The description of the circuit board 100, the light-absorbing layer 200, the electronic component 300, the adhesive layer AL, and the filling layer FL can be referred to the above embodiment, and will not be repeated here.

[0081] The opposing substrate 400b is disposed opposite to the circuit substrate 100, and may include, for example, a substrate SB2, a light-shielding pattern BM, and a color filter CF.

[0082] The material of substrate SB2 may be the same as or similar to the material of substrate SB1 of circuit board 100, for example, and will not be described in detail here.

[0083] A light-shielding pattern BM and a color filter CF are disposed, for example, on a substrate SB2. In some embodiments, the light-shielding pattern BM and the color filter CF are each disposed on the surface of the substrate SB2 facing the circuit board 100, but this disclosure is not limited thereto. In this embodiment, the light-shielding pattern BM is, for example, adjacent to or surrounding the color filter CF. For example, the light-shielding pattern BM may have multiple openings to form a grid structure, wherein the color filter CF may be disposed in the corresponding openings, but this disclosure is not limited thereto. The material of the light-shielding pattern BM may include, for example, black resin, black photoresist, metal, or combinations thereof, but this disclosure is not limited thereto. Based on this, the light-shielding pattern BM may be used, for example, to shield components and traces inside the electronic device 10b that are not intended to be seen by the user, thereby improving the display effect of the electronic device 10b. The color filter CF may include, for example, a red filter pattern, a green filter pattern, a blue filter pattern, filter patterns of other colors, or combinations thereof, thereby reducing the reflection of ambient light by the electronic device 10b and improving ambient contrast, but this disclosure is not limited thereto.

[0084] In summary, in the electronic devices and manufacturing methods disclosed in some embodiments of this disclosure, the light-absorbing layer, which has relatively low reflectivity and defines the placement space for electronic components, can be formed using a relatively small number of process steps, thereby improving the process efficiency and / or reducing the process cost of the electronic devices provided by this disclosure. Furthermore, by including a photochromic material in the light-absorbing layer, the photochromic mechanism of the material can be utilized during the formation process to enhance the photosensitivity of the bottom of the light-absorbing layer, so that the light-absorbing layer can maintain a relatively stable structure (the extension line of the sidewall of the opening has an inclination angle between 75 and 105 degrees relative to the horizontal line) even at a desired thickness, thereby improving the reliability of the electronic devices provided by this disclosure.

[0085] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it. Although the present invention has been described in detail with reference to the above embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the above embodiments, or replace some or all of the technical features therein with equivalents. However, these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. An electronic device, characterized in that, include: Circuit board; A light-absorbing layer is disposed on the circuit board, the light-absorbing layer including openings; and Electronic components are disposed in the opening and electrically connected to the circuit board. In the sectional view, the profile of the sidewall of the opening has at least one arcuate edge, and the extension line of the sidewall of the opening has an inclination angle between 75 degrees and 105 degrees relative to the horizontal line.

2. The electronic device of claim 1, wherein the profile of the sidewall of the opening has a first arcuate edge and a second arcuate edge, and there is a point of inflection between the first arcuate edge and the second arcuate edge.

3. The electronic device according to claim 2, wherein the position of the inflection point is located at 0.4 to 0.6 times the height of the light-absorbing layer.

4. The electronic device according to claim 2, wherein the first arcuate edge has a protrusion, and the protrusion is located at 0.5 to 0.9 times the height of the light-absorbing layer.

5. The electronic device according to claim 2, wherein the second arcuate edge has a concave point, and the concave point is located at a position of 0.1 to 0.4 times the height of the light-absorbing layer.

6. The electronic device according to claim 1, wherein the optical density value of the light-absorbing layer is between 1.5 and 5.

7. The electronic device of claim 1, wherein the light-absorbing layer comprises a photochromic material.

8. The electronic device according to claim 1, wherein the height of the light-absorbing layer is between 7.5 μm and 10.5 μm.

9. The electronic device of claim 1, wherein the circuit board includes a bonding pad, the electronic element includes an electrode, and the electronic element is bonded to the bonding pad via the electrode.

10. The electronic device according to claim 1, wherein the electronic component is a red light-emitting diode, a green light-emitting diode, or a blue light-emitting diode.

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