Radio frequency switch chip, radio frequency front-end module and electronic equipment

By setting multiple common ports and connecting lines in the RF switch chip, the length of the connecting line from the switch unit to the common port is shortened, which solves the problem of inconsistent switch unit parameters and improves the performance of the RF switch chip.

CN120882073APending Publication Date: 2025-10-31RADROCK (SHENZHEN) SEMICONDUCTOR LTD
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Patent Information

Application Number
CN202510895472.6
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2025-06-30
Publication Date
2025-10-31

AI Technical Summary

Technical Problem

In the RF front-end module, when multiple switching units of the RF switch chip are connected to the antenna port through the same port, the difference in signal transmission path leads to inconsistent parameters, which affects the chip performance.

Method used

Multiple common ports are set in the RF switch chip, and multiple switch units are connected to the common ports through connecting lines. This shortens the length of the connecting line between each switch unit and the common port, and makes the difference in the length of the connecting line between different switch units and the common port smaller.

Benefits of technology

It improves the parameter consistency of switching units in RF switch chips, reduces insertion loss, parasitic inductance and parasitic capacitance, and enhances chip performance.

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Abstract

The embodiment of the invention provides a radio frequency switch chip, a radio frequency front-end module and electronic equipment, the radio frequency switch chip comprises a plurality of switch units, a connecting line and a plurality of public ports, the connecting line is connected with the first ends of the switch units, the public ports are arranged at intervals and connected with the connecting line, and the connecting line is connected with the first ends of the switch units. And the plurality of public ports are used for connecting the same antenna port outside the radio frequency switch chip. The radio frequency switch chip comprises a plurality of common ports, and a plurality of switch units are connected with the plurality of common ports through connecting lines, so that the length of the connecting line between each switch unit and the common port in the radio frequency switch chip can be shortened; parameters such as insertion loss, parasitic inductance and / or parasitic capacitance of each switch unit in the radio frequency switch chip can be small; and the difference of the lengths of the connecting lines between different switch units and the common port is small, so that the consistency of various parameters of different switch units is higher, and the performance of the radio frequency switch chip can be further improved.
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Description

Technical Field

[0001] This application relates to the field of radio frequency technology, and in particular to a radio frequency switch chip, a radio frequency front-end module, and an electronic device. Background Technology

[0002] With the rapid development of new-generation information technology, technologies in various sub-fields are constantly being updated and improved, placing higher demands on the performance indicators of radio frequency (RF) front-end modules. RF front-end modules include RF switch chips, which contain multiple switching units. In related RF front-end modules, these multiple switching units are connected to the antenna port of the RF front-end module through the same port of the RF switch chip. Significant differences in signal transmission paths between different switching units and the antenna port can lead to inconsistencies in various parameters (such as parasitic effects) of different switching units, thus affecting the performance of the RF switch chip. Summary of the Invention

[0003] This application provides an RF switch chip, an RF front-end module, and an electronic device, which can improve parameters such as insertion loss of the switching units in the RF switch chip, and improve the consistency of parameters of different switching units, thereby improving the performance of the RF switch chip.

[0004] In a first aspect, embodiments of this application provide a radio frequency switch chip, the radio frequency switch chip comprising:

[0005] Multiple switching units;

[0006] A connecting line, wherein the connecting line connects to the first end of the plurality of switching units;

[0007] Multiple common ports are spaced apart and all connected to the connecting line. The multiple common ports are used to connect to the same antenna port outside the RF switch chip.

[0008] Secondly, this application provides a radio frequency front-end module, which includes a radio frequency switch chip and an antenna port. The radio frequency switch chip is the aforementioned radio frequency switch chip, and multiple common ports of the radio frequency switch chip are connected to the antenna port.

[0009] Thirdly, embodiments of this application provide an electronic device, which includes the radio frequency switch chip as described above, or includes the radio frequency front-end module as described above.

[0010] The RF switch chip, RF front-end module, and electronic device provided in this application embodiment include: the RF switch chip comprising: multiple switch units, connecting lines, and multiple common ports. The connecting lines connect to the first ends of the multiple switch units, and the multiple common ports are spaced apart and all connected to the connecting lines. The multiple common ports are used to connect to the same antenna port outside the RF switch chip. By setting the RF switch chip to include multiple common ports, and the multiple switch units being connected to the multiple common ports through connecting lines, the length of the connecting lines from each switch unit to the common port in the RF switch chip can be shortened. This results in smaller insertion loss, parasitic inductance, and / or parasitic capacitance parameters for each switch unit in the RF switch chip; and smaller differences in the length of the connecting lines from different switch units to the common ports, thereby improving the consistency of various parameters of different switch units and further enhancing the performance of the RF switch chip.

[0011] It should be understood that the above general description and the following detailed description are exemplary and explanatory only, and do not limit the disclosure of the embodiments of this application. Attached Figure Description

[0012] To more clearly illustrate the technical solutions of the embodiments of this application, the drawings used in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0013] Figure 1 This is a schematic diagram of a radio frequency switch chip provided in an embodiment of this application;

[0014] Figure 2 This is a schematic diagram of a radio frequency switch chip related to this technology;

[0015] Figures 3a to 5 These are schematic diagrams of the radio frequency front-end module in some embodiments of this application;

[0016] Figure 6 This is a schematic diagram of a switching unit in some embodiments of this application;

[0017] Figure 7 This is a schematic diagram of a radio frequency front-end module provided in an embodiment of this application;

[0018] Figure 8 These are schematic diagrams of the radio frequency front-end module in some embodiments of this application;

[0019] Figure 9 This is a schematic diagram of an electronic device provided in an embodiment of this application.

[0020] Explanation of reference numerals in the attached figures:

[0021] 10. RF switch chip; 101. First side; 102. Second side; 103. Third side; 11. Switching unit; 111. First switching unit; 112. Second switching unit; 113. Third switching unit; 114. Fourth switching unit; 115. Fifth switching unit; S1. First switching transistor; S2. Second switching transistor; 12. Connecting line; 1201. First connecting node; 121. First sub-connecting line; 122. Second sub-connecting line; 123. Third sub-connecting line; 13. Common port; 131. First common port; 132. Second common port; 133. Third common port; 134. Fourth common port; 135. Fifth common port; 14. Control circuit; 15. Signal input / output port; 16. Ground terminal; 20. Antenna port; 30. Metal trace; 40. Substrate. Detailed Implementation

[0022] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0023] It should be understood that this application can be implemented in various forms and should not be construed as being limited to the embodiments set forth herein. Rather, providing these embodiments will make the disclosure thorough and complete, and will fully convey the scope of this application to those skilled in the art. In the drawings, for clarity, the dimensions of layers and regions, as well as their relative dimensions, may be exaggerated. The same reference numerals denote the same elements throughout.

[0024] To fully understand this application, detailed structures and steps will be presented in the following description to illustrate the technical solutions proposed in this application. Preferred embodiments of this application are described in detail below; however, in addition to these detailed descriptions, this application may have other implementation methods.

[0025] The following detailed description of some embodiments of this application is provided in conjunction with the accompanying drawings. Unless otherwise specified, the following embodiments and features can be combined with each other.

[0026] Please see Figure 1 , Figure 1 This is a schematic diagram of a radio frequency switch chip 10 provided in an embodiment of this application.

[0027] like Figure 1 As shown, the RF switch chip 10 includes: multiple switch units 11, connecting lines 12, and multiple common ports 13.

[0028] The connecting line 12 connects to the first end of multiple switching units 11, and multiple common ports 13 are spaced apart and all connected to the connecting line 12. The multiple common ports 13 are used to connect to the same antenna port 20 outside the radio frequency switch chip 10.

[0029] Antenna port 20 is used to connect an antenna. When switch unit 11 is turned on, the radio frequency signal input to antenna port 20 can be transmitted to the circuit connected to the second terminal of switch unit 11, or the radio frequency signal output from the circuit connected to the second terminal of switch unit 11 can be transmitted to antenna port 20 so that the antenna can radiate the radio frequency signal. Optionally, one or more switch units 11 can be turned on at the same time, while the other switch units 11 are turned off.

[0030] like Figure 2 The diagram shows a schematic of a radio frequency switch chip 10 in the related technology. The connection line 12 of the radio frequency switch chip 10 connects to multiple switch units 11, and for the same antenna port 20, the radio frequency switch chip 10 only sets one common port 13 to connect to the antenna port 20.

[0031] according to Figure 2 It can be confirmed that Figure 2 In the RF switch chip 10 shown, the length of the connection line 12 between some switch units 11 and the common port 13 is relatively long, and the length of the connection line 12 between different switch units 11 and the common port 13 varies significantly. Especially when there are a large number of switch units 11 in the RF switch chip 10, the length of the connection line 12 between some switch units 11 and the common port 13 will further increase, and the difference between the length of the connection line 12 between some switch units 11 and at least one other switch unit 11 and the common port 13 will also further increase. This results in higher insertion loss, parasitic inductance, and / or parasitic capacitance parameters for some switch units 11, and the insertion loss, parasitic inductance, and / or parasitic capacitance parameters are inconsistent among different switch units 11, affecting the performance of the RF switch chip 10.

[0032] Please combine Figure 2 See Figure 1 In the RF switch chip 10 of this application embodiment, the length of the connecting line 12 between each switch unit 11 and the common port 13 is relatively small, which makes the parameters such as insertion loss, parasitic inductance and / or parasitic capacitance of each switch unit 11 relatively small; and the difference in the length of the connecting line 12 between different switch units 11 and the common port 13 is relatively small, and the consistency of various parameters (such as insertion loss, parasitic capacitance and / or parasitic inductance) of different switch units 11 is higher, which can further improve the performance of the RF switch chip 10.

[0033] like Figure 1As shown, the common port 13 of the RF switch chip 10 can be connected to the antenna port 20 via a metal trace 30. In some embodiments, the cross-sectional area of ​​the metal trace 30 is larger than that of the connecting line 12, for example, the line width of the metal trace 30 is larger than that of the connecting line 12, and / or the metal thickness of the metal trace 30 is larger than that of the connecting line 12. For example, both the RF switch chip 10 and the antenna port 20 are disposed on the substrate. The metal trace 30 between the common port 13 and the antenna port 20 is a metal wiring on the substrate, and its line width and metal thickness are much larger than the wiring inside the chip (including the connecting line 12). Therefore, it has little impact on parameters such as insertion loss, parasitic inductance, and / or parasitic capacitance of the switching unit 11. The insertion loss, parasitic inductance, and / or parasitic capacitance of the path of each switching unit 11 mainly depend on the length of the connecting line 12 from the switching unit 11 to the common terminal within the RF switch chip 10. In this embodiment, the RF switch chip is configured with... The RF switch chip 10 includes multiple common ports 13, and multiple switching units 11 are connected to the multiple common ports 13 via connecting lines 12. This can shorten the length of the connecting lines 12 between each switching unit 11 and the common port 13 in the RF switch chip 10, making the insertion loss, parasitic inductance, and / or parasitic capacitance of each switching unit 11 in the RF switch chip 10 relatively small. It also makes the difference in the length of the connecting lines 12 between different switching units 11 and the common port 13 relatively small, thereby making the consistency of various parameters of different switching units 11 higher, and further improving the performance of the RF switch chip 10.

[0034] In some implementations, such as Figures 3a-4 As shown, multiple common ports 13 are disposed on the connecting line 12, which can reduce parameters such as insertion loss, parasitic inductance, and / or parasitic capacitance between the common ports 13 and the connecting line 12. Of course, it is not limited to this. For example, in other embodiments, the common ports 13 may be disposed at intervals with the connecting line 12 and connected by other metal patterns or metal wires.

[0035] In some implementations, such as Figures 3a-4 As shown, at least one common port 13 is disposed between two adjacent switching units 11. The lengths of the connecting lines 12 between these two adjacent switching units 11 and the common port 13 are both relatively short, resulting in relatively small insertion loss, parasitic inductance, and / or parasitic capacitance parameters of these two adjacent switching units 11; and the difference in length between the connecting lines 12 between these two adjacent switching units 11 and the common port 13 is also small, leading to higher consistency in the parameters of these two adjacent switching units 11, which further improves the performance of the RF switch chip 10.

[0036] In some implementations, such as Figure 1As shown, each switch unit 11 has a common port 13 next to it. The length of the connecting line 12 between each switch unit 11 and the common port 13 is relatively small, which makes the parameters such as insertion loss, parasitic inductance and / or parasitic capacitance of the connecting line 12 between each switch unit 11 and the common port 13 relatively small. In addition, the difference in the length of the connecting line 12 between different switch units 11 and the adjacent common port 13 is also small, and the consistency of various parameters of different switch units 11 is higher.

[0037] In some embodiments, at least a portion of the switching units 11 are provided with a preset number of switching units 11 between them and the nearest common port 13, and the difference between the maximum and minimum preset number is less than or equal to 2. That is, the difference in the number of other switching units 11 between different switching units 11 and the nearest common port 13 is less than or equal to 2.

[0038] For example, if there are common ports 13 on both sides of the switch unit 11 along the extension direction of the connecting line 12, by comparing the lengths of the connecting lines 12 between the switch unit 11 and each common port 13, it can be determined that the common port 13 with the shortest corresponding connecting line length is the common port 13 closest to the switch unit 11. For example, if there is a common port 13 on the first side of the switch unit 11 and no common port 13 on the second side along the extension direction of the connecting line 12, it can be determined that the common port 13 on the first side of the switch unit 11 is the common port 13 closest to the switch unit 11. For example, if there are no other switch units 11 between the switch unit 11 and the common port 13, it can be determined that the common port 13 is the common port 13 closest to the switch unit 11.

[0039] By setting the difference between the maximum and minimum preset number to be less than or equal to 2, the difference in length of the connection line 12 between different switch units 11 and the nearest common port 13 can be smaller, and the consistency of various parameters of different switch units 11 can be higher, thereby improving the performance of the RF switch chip 10.

[0040] For example, the preset number is less than or equal to 3. For instance, the number of switching units 11 between each switching unit 11 in the RF switch chip 10 and the nearest common port 13 is less than or equal to 3, so that the length of the connection line 12 between each switching unit 11 and the corresponding common port 13 is relatively small, which can make the insertion loss, parasitic inductance and / or parasitic capacitance of each switching unit 11 in the RF switch chip 10 relatively small.

[0041] For example, at least some of the switch units 11 are provided with the same number of switch units 11 between them and the nearest common port 13. This makes the lengths of the connecting lines 12 between these switch units 11 and their respective corresponding common ports 13 equal or approximately equal, resulting in higher consistency of the parameters of these switch units 11.

[0042] For example, such as Figure 5 As shown, multiple switch units 11 include a first switch unit 111 and a second switch unit 112, and multiple common ports 13 include a first common port 131 and a second common port 132. The length of the connecting line 12 between the first switch unit 111 and the first common port 131 is less than the length of the connecting line 12 between the first switch unit 111 and other common ports 13, meaning the first common port 131 is the closest common port to the first switch unit 111. The length of the connecting line 12 between the second switch unit 112 and the second common port 132 is less than the length of the connecting line 12 between the second switch unit 112 and other common ports 13, meaning the second common port 132 is the closest common port to the second switch unit 112. N other switch units 11 are provided between the first switch unit 111 and the first common port 131, and N other switch units 11 are provided between the second switch unit 112 and the second common port 132, where N is a positive integer. For example, Figure 5 One additional switch unit 11 is provided between the first switch unit 111 and the first common port 131, and another additional switch unit 11 is provided between the second switch unit 112 and the second common port 132. This ensures that the lengths of the connecting lines 12 between the first switch unit 111 and the second switch unit 112 and their respective nearest common ports 13 are equal or approximately equal, thereby improving the consistency of various parameters between the first switch unit 111 and the second switch unit 112.

[0043] For example, with Figure 3a The nearest common port 13 to the switch unit 11 in the upper right corner is Figure 3a The common port 13 at the top left of the middle, a switch unit 11 is provided between the switch unit 11 and the common port 13; and Figure 3a The nearest common port 13 to the switch unit 11 in the lower right corner is Figure 3a The common port 13 is located at the bottom left of the middle section. A switch unit 11 is provided between the switch unit 11 and the common port 13. Figure 3a The switch unit 11 in the upper right corner and Figure 3a The lengths of the connecting lines 12 between the switch unit 11 in the lower right corner and its corresponding common port 13 are equal or approximately equal, which makes the parameters of the two switch units 11 more consistent.

[0044] In some implementations, please refer to Figure 3a The first end of the switching unit 11 is connected to the first connection node 1201 of the connection line 12. Along the extension direction of the connection line 12, the length of the connection line 12 between the first connection node 1201 and the nearest common port 13 is the first path length. The difference between the maximum and minimum values ​​of the first path length is less than or equal to a preset difference. This results in a smaller difference in the first path length between different switching units 11 and the common port 13 in the RF switching chip 10, leading to higher consistency in the parameters of different switching units 11 and improving the performance of the RF switching chip 10.

[0045] For example, the preset difference is less than or equal to 600 μm (micrometers), that is, the difference in distance between the first end of every two switching units 11 and the nearest common port 13 does not exceed 600 μm, so that the first path length between each switching unit 11 and the common port 13 in the RF switching chip 10 is relatively small, and the insertion loss, parasitic inductance and / or parasitic capacitance of the connection line 12 between each switching unit 11 and the common port 13 are relatively small.

[0046] In some implementations, please refer to Figure 3a or Figure 4 The radio frequency switch chip 10 has a first side 101 and a second side 102, with the first side 101 connected to the second side 102. For example, Figure 3a or Figure 4 The first side 101 of the RF switch chip 10 is the left side, and the second side 102 is the top side.

[0047] like Figures 3a to 4 As shown, the plurality of switch units 11 include a plurality of third switch units 113 and at least one fourth switch unit 114. The connecting line 12 includes a first sub-connecting line 121 and a second sub-connecting line 122. The first sub-connecting line 121 is arranged along a first direction, and the second sub-connecting line 122 is arranged along a second direction. The first end of the first sub-connecting line 121 is connected to the first end of the second sub-connecting line 122. The plurality of third switch units 113 are arranged along the first sub-connecting line 121, and the first sub-connecting line 121 is connected to the first end of the third switch unit 113. The at least one fourth switch unit 114 is arranged along the second sub-connecting line 122, and the second sub-connecting line 122 is connected to the first end of the fourth switch unit 114.

[0048] like Figure 3bAs shown, the multiple third switch units 113 and at least one fourth switch unit 114 are arranged in an L-shape. Compared with the multiple switch units 11 being arranged along the same direction, the length occupied by the multiple switch units 11 in the first direction can be shortened, and / or more switch units 11 can be arranged in the RF switch chip 10 to optimize the layout of each part in the RF switch chip 10.

[0049] For example, the RF switch chip 10 is rectangular, with the first side 101 being the long side of the rectangle, and the second side 102 and the third side 103 being the short sides of the rectangle. By arranging multiple third switch units 113 and at least one fourth switch unit 114 in an L-shaped layout, the ratio of the length (length direction parallel to the first direction) to the width (width direction parallel to the second direction) of the RF switch chip 10 can be reduced, i.e., the aspect ratio of the RF switch chip 10 can be reduced.

[0050] like Figure 3a or Figure 4 As shown, the multiple public ports 13 include at least multiple third public ports 133. The multiple third public ports 133 are arranged along the first sub-connection line 121, and the multiple third public ports 133 are all connected to the first sub-connection line 121. For example, the multiple third public ports 133 are all arranged on the first sub-connection line 121.

[0051] Optionally, the second sub-connection line 122 may not have a common port 13. For example, the fourth switch unit 114 can be connected to the first sub-connection line 121 via the second sub-connection line 122, and then connected to the third common port 133 via the first sub-connection line. For example, the number of fourth switch units 114 is less than the number of third switch units 113, and / or less than 3; this makes the length of the connection line 12 between the fourth switch unit 114 and the nearest third common port 133 shorter, thereby reducing parameters such as insertion loss, parasitic inductance, and / or parasitic capacitance of the connection line 12 between the fourth switch unit 114 and the third common port 133.

[0052] For example, the first direction is parallel to the first side 101, and the second direction is parallel to the second side 102. The first sub-connection line 121 and the third switching unit 113 are arranged along the first direction parallel to the first side 101, and the second sub-connection line 122 and the fourth switching unit 114 are arranged along the second direction parallel to the second side 102. Optionally, the first sub-connection line 121 and the third switching unit 113 may be arranged along the first side 101, and the second sub-connection line 122 and the fourth switching unit 114 may be arranged along the second side 102, so that the third switching unit 113 and the fourth switching unit 114 are arranged close to the side of the RF switching chip 10, so as to connect the third switching unit 113 and the fourth switching unit 114 to external circuits (such as matching units and / or filters), shortening the path length between the third switching unit 113 and the fourth switching unit 114 and the external circuits.

[0053] Optional, such as Figure 3a or Figure 4 As shown, the RF switch chip 10 also has a third side 103, which is connected to the first side 101 and opposite to the second side 102; the plurality of switch units 11 also include at least one fifth switch unit 115, the connecting line 12 also includes a third sub-connecting line 123, the third sub-connecting line 123 is arranged along a third direction, and the second end of the first sub-connecting line 121 is connected to the first end of the third sub-connecting line 123; at least one fifth switch unit 115 is arranged along the third sub-connecting line 123, and the third sub-connecting line 123 is connected to the first end of the fifth switch unit 115.

[0054] The multiple third switch units 113, at least one fourth switch unit 114, and at least one fifth switch unit 115 are arranged in a C-shape. Compared to multiple switch units 11 being arranged along the same direction, the length occupied by multiple switch units 11 in the first direction can be further shortened, and / or more switch units 11 can be arranged in the RF switch chip 10 to optimize the layout of each part in the RF switch chip 10. For example, the ratio of the length (length direction parallel to the first direction) to the width (width direction parallel to the second direction) of the RF switch chip 10 can be reduced, that is, the aspect ratio of the RF switch chip 10 can be reduced.

[0055] For example, the third direction is parallel to the second direction. The third sub-connection line 123 and the fifth switching unit 115 are arranged along the third direction parallel to the third side 103. Optionally, the third sub-connection line 123 and the fifth switching unit 115 can be arranged along the third side 103 to place the fifth switching unit 115 close to the side of the RF switching chip 10 so as to connect the fifth switching unit 115 to other circuits (such as matching units and / or filters) and shorten the path length between the fifth switching unit 115 and other circuits.

[0056] Optional, please refer to Figure 3a The first end of the first sub-connector 121 (e.g. Figure 3a The upper end of the middle) is provided with a third common port 133, and / or the second end of the first sub-connector 121 (such as Figure 3a The lower end of the first sub-connecting line 121 is provided with a third common port 133. For example, the fourth switching unit 114 can be connected to the third common port 133 at the first end of the first sub-connecting line 121 via the second sub-connecting line 122, which can shorten the length of the connecting line 12 between the fourth switching unit 114 and the nearest third common port 133, thereby reducing parameters such as insertion loss, parasitic inductance, and / or parasitic capacitance of the connecting line 12 between the fourth switching unit 114 and the third common port 133; for example, the fifth switching unit 115 can be connected to the third common port 133 at the second end of the first sub-connecting line 121 via the third sub-connecting line 123, which can shorten the length of the connecting line 12 between the fifth switching unit 115 and the nearest third common port 133, thereby reducing parameters such as insertion loss, parasitic inductance, and / or parasitic capacitance of the connecting line 12 between the fifth switching unit 115 and the third common port 133.

[0057] Optional, please refer to Figure 4 The plurality of public ports 13 also include a fourth public port 134, which is disposed along the second sub-connecting line 122 and connected to the second sub-connecting line 122; and / or the plurality of public ports 13 also include a fifth public port 135, which is disposed along the third sub-connecting line 123 and connected to the third sub-connecting line 123. For example, the fourth public port 134 and the third public port 133 are arranged in an L-shape, or the fifth public port 135 and the third public port 133 are arranged in an L-shape, or the fourth public port 134, the third public port 133 and the fifth public port 135 are arranged in a C-shape.

[0058] By setting a fourth common port 134 on the second sub-connection line 122, the distance between the fourth switching unit 114 and the fourth common terminal is smaller, which can reduce parameters such as insertion loss, parasitic inductance, and / or parasitic capacitance of the connection line 12 between the fourth switching unit 114 and the fourth common port 134; by setting a fifth common port 135 on the third sub-connection line 123, the distance between the fifth switching unit 115 and the fifth common terminal is smaller, which can reduce parameters such as insertion loss, parasitic inductance, and / or parasitic capacitance of the connection line 12 between the fifth switching unit 115 and the fifth common port 135. For example, when there are many switching units 11 in the RF switch chip 10, a large number of fourth switching units 114 can be set along the second sub-connection line 122 and a fourth common terminal can be set on the second sub-connection line 122, which can make the distance between the fourth switching unit 114 and the fourth common terminal in the RF switch chip 10 smaller, and / or a large number of fifth switching units 115 can be set along the third sub-connection line 123 and a fifth common terminal can be set on the third sub-connection line 123, which can make the distance between the fifth switching unit 115 and the fifth common terminal in the RF switch chip 10 smaller.

[0059] For example, if the number of switching units 11 in the RF switch chip 10 is small, and the number of fourth switching units 114 provided along the second sub-connection line 122 is small, then the fourth common port 134 does not need to be provided on the second sub-connection line 122. If the number of fifth switching units 115 provided along the third sub-connection line 123 is small, then the fifth common port 135 does not need to be provided on the third sub-connection line 123. For example, the common port 13 can be provided only on the first sub-connection line 121.

[0060] In some embodiments, the RF switch chip 10 further includes a control circuit 14 connected to the switch units 11, which outputs control signals to each switch unit 11 to control each switch unit 11 to be turned on or off. For example, the control circuit 14 can control some of the switch units 11 in the RF switch chip 10 to be turned on and the remaining switch units 11 to be turned off.

[0061] Optional, such as Figure 3a or Figure 4 As shown, the control circuit 14 is at least partially disposed in the area formed by the plurality of switching units 11. For example, when the plurality of third switching units 113 and at least one fourth switching unit 114 are arranged in an L-shape, at least part of the control circuit 14 is disposed in the area formed by the corner of the L-shape; or when the plurality of third switching units 113, at least one fourth switching unit 114 and at least one fifth switching unit 115 are arranged in a C-shape, at least part of the control circuit 14 is disposed in the area inside the C-shape, which can make the layout of the RF switch chip 10 more compact and is beneficial to the miniaturization of the RF switch chip 10.

[0062] In some implementations, please refer to Figure 3a , Figure 4 or Figure 5 Multiple switching units 11 are symmetrically arranged, and the virtual axis of symmetry of the multiple switching units 11 is parallel to the second side 102 of the RF switch chip 10; wherein, multiple common ports 13 are symmetrical about the virtual axis of symmetry of the multiple switching units 11. This makes the difference in the length of the connecting line 12 between different switching units 11 and the common port 13 smaller, and the consistency of various parameters (such as insertion loss, parasitic capacitance and / or parasitic inductance, etc.) of different switching units 11 is higher, which can further improve the performance of the RF switch chip 10.

[0063] For example, please combine Figure 6 See Figure 3a or Figure 3c The RF switch chip 10 also includes multiple signal input / output ports 15, each signal input / output port 15 corresponding to a switch unit 11; for example, the signal input / output port 15 is used to connect to a matching unit and / or circuits such as filters / power amplifiers / low noise amplifiers.

[0064] Optionally, the switching unit 11 includes a first switching transistor S1 and a second switching transistor S2. The first end of the first switching transistor S1 is connected to the connecting line 12, and the second end of the first switching transistor S1 and the first end of the second switching transistor S2 are connected to the corresponding signal input / output port 15. The second end of the second switching transistor S2 is grounded. The first switching transistor S1 and the second switching transistor S2 can be in an L-shaped configuration, where the first switching transistor S1 can be called a series switching transistor and the second switching transistor S2 can be called a parallel switching transistor. However, this is not a limitation. For example, the switching unit 11 can also include three or more switching transistors, and the configuration of the multiple switching transistors in the switching unit 11 is not limited to an L-shaped configuration; for example, it can also be a T-shaped or π-shaped configuration.

[0065] For example, the RF switch chip 10 has multiple ground terminals 16, and the second switching transistors S2 in at least two adjacent switching units 11 are connected to the same ground terminal 16. Figure 3a The third switch unit 113 in the middle, Figure 3a The second switch S2 in the two third switch units 113 on the upper middle side is connected to the same ground terminal 16. Figure 3a The second switching transistors S2 in the two third switching units 113 on the lower middle side are connected to the same ground terminal 16. This reduces the number of ground terminals 16 in the RF switch chip 10, thereby reducing the size of the RF switch chip 10.

[0066] For example, in at least one switching unit 11, the distance between the first switching transistor S1 and the nearest common port 13 of the switching unit 11 is less than the distance between the second switching transistor S2 and the nearest common port 13 of the switching unit 11. Figure 3a As shown, the first end of the first switch tube S1 is connected to the connecting line 12. By setting the third common port 133 close to the first switch tube S1 in the third switch unit 113, the distance between the switch unit 11 and the common port 13 can be shortened, thereby reducing signal transmission loss.

[0067] In some embodiments, the radio frequency switch chip 10 may include two or more connection lines 12, with each pair of connection lines 12 spaced apart; taking two connection lines as an example, some of the multiple switch units 11 are arranged along one of the connection lines 12, and the remaining switch units 11 are arranged along the other connection line 12; at least one of the two connection lines 12 is provided with multiple common ports 13.

[0068] For example, the RF front-end module may include an antenna port 20. When there is only one antenna port 20, the RF switch chip 10 may include one or more connecting lines 12. Each connecting line may have one or more common ports 30, and the common ports 30 on each connecting line 12 are all connected to the same antenna port 20. When there are a large number of switch units connected to the same antenna port 20, such as when there are more than 12 switch units, the multiple switch units are divided into two groups, each group is connected to a corresponding connecting line 12, and at least one connecting line 12 is provided with multiple common ports 30. This can further shorten the length of the connecting line 12 between each switch unit 11 and the common port 13 in the RF switch chip 10, and make the parameters such as insertion loss, parasitic inductance and / or parasitic capacitance of each switch unit 11 in the RF switch chip 10 relatively small; and further reduce the difference in the length of the connecting line 12 between different switch units 11 and the common port 13, so that the consistency of various parameters of different switch units 11 is higher.

[0069] For example, the RF front-end module may include multiple antenna ports 20. When the RF front-end module has multiple antenna ports 20, the RF switch chip 10 may include multiple connection lines 12. One antenna port 20 may correspond to one or more connection lines 12. At least one connection line 12 may have multiple common ports, and the remaining connection lines 12 may have one common terminal or multiple common ports.

[0070] Within the RF switch chip 10, all common ports 13 on the same connection line 12 are connected to the same antenna port 20 on the substrate. For example, the multiple antenna ports 20 include a first antenna port and a second antenna port. Exemplarily, each connection line 12 is provided with multiple common ports 13. The multiple common ports 13 on the first connection line 12 are all connected to the first antenna port, and the multiple common ports 13 on the second connection line 12 are all connected to the second antenna port.

[0071] For example, the multiple antenna ports 20 include a first antenna port and a second antenna port, a first connecting line 12 is provided with a plurality of common ports 13, and a second connecting line 12 is provided with a common port, wherein the plurality of common ports 13 on the first connecting line 12 are all connected to the first antenna port, and the common port 13 on the second connecting line 12 is connected to the second antenna port.

[0072] The radio frequency (RF) switch chip 10 provided in this application embodiment includes: multiple switch units 11, connecting lines 12, and multiple common ports 13. The connecting lines 12 connect to the first ends of the multiple switch units 11, and the multiple common ports 13 are spaced apart and all connected to the connecting lines 12. The multiple common ports 13 are used to connect to the same antenna port 20 outside the RF switch chip 10. By setting the RF switch chip 10 to include multiple common ports 13, and the multiple switch units 11 are connected to the multiple common ports 13 through the connecting lines 12, the length of the connecting lines 12 between each switch unit 11 and the common port 13 in the RF switch chip 10 can be shortened. This makes the insertion loss, parasitic inductance, and / or parasitic capacitance of each switch unit 11 in the RF switch chip 10 relatively small; and makes the difference in the length of the connecting lines 12 between different switch units 11 and the common port 13 relatively small, thereby making the consistency of various parameters of different switch units 11 higher, and further improving the performance of the RF switch chip 10.

[0073] Please refer to the foregoing embodiments. Figure 7 ,like Figure 7 The diagram shown is a schematic diagram of a radio frequency front-end module provided in an embodiment of this application; the radio frequency front-end module includes a radio frequency switch chip 10 and an antenna port 20. The radio frequency switch chip 10 is the radio frequency switch chip 10 of the aforementioned embodiment of this application, and multiple common ports 13 of the radio frequency switch chip 10 are connected to the antenna port 20.

[0074] In some embodiments, the RF front-end module includes a substrate 40, on which multiple pads (not shown) are disposed. At least some of the pads are connected to the antenna port 20 via metal traces 30 on the substrate 40. For example, the substrate 40 has multiple pads, and each common port 13 is connected to a corresponding pad on the substrate 40. These pads are connected to the antenna port 20 via metal traces 30 on the substrate 40. Optionally, the number of pads on the substrate 40 can be less than or equal to the number of common ports 13 of the RF switch chip 10. For example, three of the five common ports 13 are connected one-to-one with three pads on the substrate 40, or the five common ports 13 are connected one-to-one with five pads on the substrate 40; or at least one pad has a large area and can be connected to multiple common ports 13. The specific configuration can be adjusted according to the layout and performance specifications of the RF front-end module, offering high flexibility.

[0075] In some implementations, the radio frequency front-end module may include multiple antenna ports 20, for example, different antenna ports 20 are used to connect antennas corresponding to different frequency bands.

[0076] Optionally, when the RF front-end module has multiple antenna ports 20, the RF switch chip 10 may include multiple connecting lines 12, for example, multiple connecting lines 12 may be connected to multiple antenna ports 20 respectively. At least one connecting line 12 has multiple common ports 13 connected to the same antenna port 20. For example, the multiple antenna ports 20 include a first antenna port and a second antenna port. Optionally, each connecting line 12 is provided with multiple common ports 13. The multiple common ports 13 on the first connecting line 12 are all connected to the first antenna port, and the multiple common ports 13 on the second connecting line 12 are all connected to the second antenna port.

[0077] In some implementations, the RF front-end module may also include at least one RF power amplifier, low-noise amplifier, filter, etc., which can be integrated into a single module to improve integration and performance and reduce size.

[0078] In some implementations, such as Figure 8 As shown, the radio frequency front-end module includes a substrate and radio frequency front-end circuits arranged on the substrate. The radio frequency front-end circuits may include radio frequency switch chips, filters, low noise amplifiers and radio frequency power amplifiers between the radio frequency receiving port RX, the radio frequency transmitting port TX and the antenna port, and form a radio frequency signal transmission path through the above radio frequency devices.

[0079] The RF front-end circuit can choose to send RF signals to the antenna port or receive RF signals from the antenna port, thereby amplifying, filtering, and other processing of RF analog signals.

[0080] In one implementation, the RF front-end module may include multiple chips, at least one of which is an RF power amplifier chip. Furthermore, the RF front-end module may also include at least one other chip such as a low-noise amplifier chip, a control chip, an RF switch chip, and a filter chip.

[0081] For example, different chips can be manufactured using different processes. For instance, low-noise amplifier chips and control chips can be manufactured using at least one of the following processes: silicon on insulator (SOI), high electron mobility transistor (HEMT), and pseudomorphic HEMT (PHEMT). Radio frequency power amplifier chips can be manufactured using HBT (heterojunction bipolar transistor) technology, also known as HBT chips, and control chips can be manufactured using CMOS technology, also known as CMOS chips.

[0082] For example, the RF front-end module may also include a filter chip, which may integrate one or more filters to form a single filter, duplexer or multiplexer for filtering RF signals.

[0083] The specific principles and implementation methods of the RF front-end module provided in this application embodiment are similar to those of the RF power amplifier in the foregoing embodiments, and will not be repeated here. Furthermore, any parts not mentioned in this application embodiment can be referred to the relevant descriptions in the foregoing embodiments, and will not be repeated here.

[0084] Please refer to the foregoing embodiments. Figure 9 ,like Figure 9 The diagram shown is a schematic representation of an electronic device according to another embodiment of this application. The electronic device includes the aforementioned radio frequency switch chip; or includes the aforementioned radio frequency front-end module.

[0085] The electronic device can be a mobile phone, tablet computer, vehicle terminal, or other communication device. Of course, it can also be other communication devices with communication functions. The embodiments of this application do not limit the specific types of electronic devices.

[0086] The specific principles and implementation methods of the electronic devices provided in this application are similar to those of the RF power amplifiers or RF front-end modules in the foregoing embodiments, and will not be repeated here. Furthermore, any parts not mentioned in this application can be referred to the relevant descriptions in the foregoing embodiments, and will not be repeated here.

[0087] It should be understood that the terminology used herein is for the purpose of describing particular embodiments only and is not intended to limit the scope of the application.

[0088] It should be understood that when an element or layer is referred to as "on," "adjacent to," "connected to," or "coupled to" other elements or layers, it may be directly on, adjacent to, connected to, or coupled to other elements or layers, or there may be intervening elements or layers. Conversely, when an element is referred to as "directly on," "directly adjacent to," "directly connected to," or "directly coupled to" other elements or layers, there are no intervening elements or layers. It should be understood that although the terms first, second, third, etc., may be used to describe various elements, components, areas, layers, and / or portions, these elements, components, areas, layers, and / or portions should not be limited by these terms. These terms are only used to distinguish one element, component, area, layer, or portion from another element, component, area, layer, or portion. Therefore, without departing from the teachings of this application, the first element, component, area, layer, or portion discussed below may be referred to as a second element, component, area, layer, or portion.

[0089] Spatial relation terms such as “below,” “under,” “below,” “under,” “above,” “above,” etc., are used herein for convenience of description to describe the relationship between one element or feature shown in the figure and other elements or features. It should be understood that, in addition to the orientation shown in the figure, spatial relation terms are intended to also include different orientations of the device in use and operation. For example, if the device in the figure is flipped, then the element or feature described as “below,” “under,” or “below” other elements or features will be oriented “above” other elements or features. Therefore, the exemplary terms “below” and “under” can include both above and below orientations. The device may be otherwise oriented (rotated 90 degrees or otherwise) and the spatial descriptive terms used herein will be interpreted accordingly.

[0090] The terminology used herein is for the purpose of describing particular embodiments only and is not intended to limit the scope of this application. When used herein, the singular forms “a,” “an,” and “the” are also intended to include the plural forms unless the context clearly indicates otherwise. It should also be understood that the terms “comprising” and / or “including,” when used in this specification, identify the presence of the stated features, integers, steps, operations, elements, and / or components, but do not exclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and / or groups. When used herein, the term “and / or” includes any and all combinations of the associated listed items.

[0091] The above description is merely a specific embodiment of this application, but the scope of protection of this application is not limited thereto. Any person skilled in the art can easily conceive of various equivalent modifications or substitutions within the technical scope disclosed in this application, and these modifications or substitutions should all be covered within the scope of protection of this application. Therefore, the scope of protection of this application should be determined by the scope of the claims.

Claims

1. A radio frequency switch chip, characterized in that, The radio frequency switch chip includes: Multiple switching units; A connecting line, wherein the connecting line connects to the first end of the plurality of switching units; Multiple common ports are spaced apart and all connected to the connecting line. The multiple common ports are used to connect to the same antenna port outside the RF switch chip.

2. The radio frequency switch chip according to claim 1, characterized in that, At least one of the common ports is located between two adjacent switch units.

3. The radio frequency switch chip according to claim 1, characterized in that, At least some of the switch units are provided with a preset number of switch units between them and the nearest common port, and the difference between the maximum value and the minimum value of the preset number is less than or equal to 2.

4. The radio frequency switch chip according to claim 3, characterized in that, The preset quantity is less than or equal to 3.

5. The radio frequency switch chip according to claim 3, characterized in that, At least some of the switch units are provided with the same number of switch units between them and the nearest common port.

6. The radio frequency switch chip according to claim 5, characterized in that, The plurality of switching units include a first switching unit and a second switching unit, and the plurality of common ports include a first common port and a second common port; The length of the connection line between the first switch unit and the first common port is less than the length of the connection line between the first switch unit and other common ports. The length of the connection line between the second switch unit and the second common port is less than the length of the connection line between the second switch unit and other common ports; There are N other switching units between the first switching unit and the first common port, and N other switching units between the second switching unit and the second common port, where N is a positive integer.

7. The radio frequency switch chip according to any one of claims 1-6, characterized in that, The first end of the switch unit is connected to the first connection node of the connection line. Along the extension direction of the connection line, the length of the connection line between the first connection node and the nearest common port is the first path length. The difference between the maximum and minimum values ​​of the first path length is less than or equal to a preset difference.

8. The radio frequency switch chip according to claim 7, characterized in that, The preset difference is less than or equal to 600 micrometers.

9. The radio frequency switch chip according to any one of claims 1-6, characterized in that, The radio frequency switch chip has a first side and a second side, and the first side is connected to the second side; The plurality of switching units include a plurality of third switching units and at least one fourth switching unit, and the connecting line includes a first sub-connecting line and a second sub-connecting line. The first sub-connecting line is arranged along a first direction, and the second sub-connecting line is arranged along a second direction. The first end of the first sub-connecting line is connected to the first end of the second sub-connecting line. The plurality of third switch units are arranged along the first sub-connecting line, and the first sub-connecting line is connected to the first end of the third switch unit; the at least one fourth switch unit is arranged along the second sub-connecting line, and the second sub-connecting line is connected to the first end of the fourth switch unit. The plurality of public ports include at least a plurality of third public ports, which are arranged along the first sub-connection line and are all connected to the first sub-connection line.

10. The radio frequency switch chip according to claim 9, characterized in that, The first direction is parallel to the first side, and the second direction is parallel to the second side.

11. The radio frequency switch chip according to claim 9, characterized in that, The radio frequency switch chip also has a third side, which is connected to the first side and opposite to the second side; The plurality of switching units further includes at least one fifth switching unit, and the connecting line further includes a third sub-connecting line, the third sub-connecting line being arranged along a third direction, and the second end of the first sub-connecting line being connected to the first end of the third connecting line; The at least one fifth switch unit is disposed along the third sub-connecting line, and the third sub-connecting line is connected to the first end of the fifth switch unit.

12. The radio frequency switch chip according to claim 11, characterized in that, The third direction is parallel to the second direction.

13. The radio frequency switch chip according to claim 11, characterized in that, The radio frequency switch chip is rectangular, with the first side of the radio frequency switch chip being the long side of the rectangle, and the second and third sides of the radio frequency switch chip being the short sides of the rectangle.

14. The radio frequency switch chip according to claim 11, characterized in that, The first end of the first sub-connector is provided with the third common port, and / or the second end of the first sub-connector is provided with the third common port.

15. The radio frequency switch chip according to claim 11, characterized in that, The plurality of common ports further includes a fourth common port, which is disposed along the second sub-connecting line and connected to the second sub-connecting line; and / or The plurality of public ports also includes a fifth public port, which is disposed along the third sub-connecting line and is connected to the third sub-connecting line.

16. The radio frequency switch chip according to any one of claims 1-6, characterized in that, The radio frequency switch chip also includes a control circuit, which is connected to the switch unit. The control circuit is at least partially disposed within the area formed by the plurality of switching units.

17. The radio frequency switch chip according to any one of claims 1-6, characterized in that, The plurality of switching units are symmetrically arranged, and the virtual axis of symmetry of the plurality of switching units is parallel to the second side of the radio frequency switch chip; The plurality of common ports are symmetrical about the virtual axis of symmetry of the plurality of switching units.

18. The radio frequency switch chip according to any one of claims 1-6, characterized in that, The radio frequency switch chip also includes multiple signal input / output ports, each of which corresponds to one of the switch units; The switching unit includes a first switching transistor and a second switching transistor. The first end of the first switching transistor is connected to the connecting line, and the second end of the first switching transistor and the first end of the second switching transistor are connected to the corresponding signal input / output ports. The second end of the second switching transistor is grounded.

19. The radio frequency switch chip according to claim 18, characterized in that, The radio frequency switch chip has multiple ground terminals, and the second switch transistors in at least two adjacent switch units are connected to the same ground terminal.

20. The radio frequency switch chip according to claim 18, characterized in that, In at least one of the switching units, the distance between the first switching transistor and the nearest common port of the switching unit is less than the distance between the second switching transistor and the nearest common port of the switching unit.

21. The radio frequency switch chip according to any one of claims 1-6, characterized in that, The multiple public ports are located on the connection line.

22. A radio frequency front-end module, characterized in that, The radio frequency front-end module includes a radio frequency switch chip and an antenna port. The radio frequency switch chip is the radio frequency switch chip according to any one of claims 1-21, and multiple common ports of the radio frequency switch chip are connected to the antenna port.

23. The radio frequency front-end module according to claim 22, characterized in that, The radio frequency front-end module includes a substrate, on which a plurality of pads are provided, and at least a portion of the pads are connected to the antenna port through metal traces on the substrate.

24. An electronic device, characterized in that, The electronic device includes a radio frequency switch chip as described in any one of claims 1 to 21, or a radio frequency front-end module as described in any one of claims 22 to 23.