Groove type semiconductor structure and manufacturing method thereof

Abstract

The invention relates to a trench type semiconductor structure and a manufacturing method thereof. The trench-type semiconductor structure includes a semiconductor material layer having a first surface, a second surface and a first conductivity type; the first groove structure extends from the first surface to the second surface and comprises a first electrode and a first gate electrode, and the first electrode comprises a first part adjacent to the first gate electrode and a second part located below the first part and the first gate electrode and connected with the first part; the first doped region is positioned on the semiconductor material layer, is adjacent to the first surface and the first part, and has the second conductivity type; the interlayer dielectric layer is located on the first surface and covers the first groove structure; the shielding metal layer covers the interlayer dielectric layer and the first doped region and is in contact with the first electrode; and a metal layer on the interlayer dielectric layer and the first doped region. The first part of the first electrode is located between the first doped region and the first gate, and the first electrode and the first doped region are both in contact with the shielding metal layer and are electrically connected with the metal layer.

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