Miniature spectrometer sensor for on-line, on-tool, distributed deposition or spectral monitoring

Abstract

Embodiments disclosed herein include a semiconductor processing tool. In one embodiment, the semiconductor processing tool includes a chamber, and a diagnostic device integrated with the chamber. In one embodiment, the diagnostic device includes a plate, a spectrometer on the plate, and a housing around the plate.

Description

[0001] Cross-reference to related applications

[0002] This application claims priority to U.S. Patent Application No. 18 / 128,032, filed March 29, 2023, the entire contents of which are incorporated herein by reference. Technical Field

[0003] The implementation relates to the field of semiconductor manufacturing, and more specifically, to a sensor (or sensor array) integrated in a chamber for measuring surface and / or plasma parameters within the chamber. Background Technology

[0004] In semiconductor manufacturing environments, chambers are typically used to deposit materials onto substrates, etch materials onto substrates, or process material layers on substrates. During various processing operations, the characteristics of the chambers may change. For example, material may be deposited onto the surface of the internal chamber. In some cases, the layer may be a coating on the surface of the internal chamber. The coating may be partially etched or excess material may be deposited on a drying layer. Changes to the internal surface of the chamber often lead to changes in the processing outcome of the substrate processed within the chamber. Therefore, it is desirable to monitor changes to the internal surface of the chamber.

[0005] To monitor conditions within the chamber, spectrometers, reflectometers, or diagnostic substrates can be used. However, common spectrometers (e.g., optical emission spectrometer (OES) sensors) are bulky and large instruments mounted externally to the chamber. Spectrometers are also limited to measuring the properties of the plasma and cannot provide information about the chamber coating. The optical path passes through a window within the chamber. Some diagnostic substrates have also been developed in the past by integrating CMOS or CCD imagers onto the substrate. However, such diagnostic substrates lack the ability to analyze the light beam to generate a spectrum. Therefore, only limited details of the internal surface or volume of the chamber can be obtained. Summary of the Invention

[0006] The embodiments disclosed herein include a semiconductor processing tool. In one embodiment, the semiconductor processing tool includes a chamber and a diagnostic device integrated with the chamber. In another embodiment, the diagnostic device includes a plate, a spectrometer on the plate, and a housing surrounding the plate.

[0007] The embodiments disclosed herein also include a semiconductor processing tool comprising a chamber and a set of diagnostic devices integrated with the chamber. In one embodiment, the integrated diagnostic devices are configured to provide layer thickness measurement, layer composition measurement, and / or plasma property measurement.

[0008] The embodiments disclosed herein also include a method for processing a semiconductor device. In one embodiment, the method includes: initiating a process in a chamber having an array of integrated diagnostic devices distributed within the chamber; and generating feedback data using the array of diagnostic devices, the feedback data including one or more of the following: the material composition of a layer, the thickness of the layer, and the spectrum of a plasma in the chamber. In one embodiment, the method further includes using the feedback data to control processing parameters of the process within the chamber. Attached Figure Description

[0009] Figure 1A This is a cross-sectional diagram of a sensor according to one embodiment that can be used to monitor layer and / or plasma parameters within a processing chamber.

[0010] Figure 1B This is a cross-sectional diagram of a sensor having components on both sides of a plate according to one embodiment.

[0011] Figure 1C This is a plan view illustration of a sensor with an optically transparent window according to one embodiment.

[0012] Figure 2 This is a cross-sectional diagram of a sensor having multiple light sources coupled to a single detector, according to one embodiment.

[0013] Figure 3 This is a cross-sectional diagram of a chamber including multiple integrated sensors distributed throughout the chamber, according to one embodiment.

[0014] Figure 4A This is a cross-sectional diagram of a gas pipeline including deposits along its internal surface, according to one embodiment.

[0015] Figure 4B This is a cross-sectional diagram of a gas pipeline with an integrated sensor according to one embodiment.

[0016] Figure 4C This is a cross-sectional diagram of a gas pipeline having a sensor provided above a window of the gas pipeline, according to one embodiment.

[0017] Figure 5 This is a plan view illustration of a sensor having a single light source coupled to multiple repeaters according to one embodiment.

[0018] Figure 6 This is a cross-sectional diagram of a chamber having a sensor coupled to a controller, according to one embodiment.

[0019] Figure 7 It is a process flow diagram according to one embodiment, which depicts a process for controlling processing parameters in response to feedback data generated by an array of sensors.

[0020] Figure 8 A block diagram of an exemplary computer system that can be used in conjunction with a processing tool according to one embodiment is shown. Detailed Implementation

[0021] The system described herein includes a sensor substrate comprising a reflectometer or spectrometer for measuring surfaces or plasma within a chamber. Several specific details are set forth in the following description to provide a thorough understanding of the embodiments. It will be apparent to those skilled in the art that embodiments can be practiced without such specific details. In other instances, well-known aspects have not been described in detail to avoid unnecessarily obscuring the embodiments. Furthermore, it will be understood that the various embodiments shown in the accompanying drawings are illustrative representations and are not necessarily drawn to scale.

[0022] As mentioned above, careful monitoring of the internal surfaces or volume of semiconductor processing chambers is necessary to maintain tightly controlled processing output. However, existing chamber monitoring solutions are limited. External optical emission spectroscopy (OES) sensors can be mounted on the wall to include the light path through windows in the chamber. Therefore, the location of the monitored chamber is limited to the light path through the windows. Consequently, spatial monitoring within the chamber is not possible. Furthermore, in existing diagnostic substrate devices, cameras or linear sensors are often used. Such cameras are limited to optical imaging (detecting only light intensity, not wavelength) and are therefore unsuitable for detecting layer thickness or layer composition.

[0023] Therefore, the embodiments disclosed herein include diagnostic devices or sensors capable of providing spectral reflectance analysis of the surfaces of an internal chamber and providing enhanced details (film thickness, refractive index, etc.) of the internal chamber layers. Embodiments may also allow analysis of the properties of plasma formed within the chamber. In one embodiment, a sensor array may be integrated throughout the chamber. The sensor array allows monitoring of various surfaces within the chamber, as well as spatial differences in the plasma (e.g., center-to-edge variations). In one embodiment, the sensor may have a compact form factor and a robust housing that allows integration in various locations (e.g., sidewalls, covers, gaskets, gas lines, etc.). That is, unlike being located only outside the chamber, the sensor may be provided inside the chamber.

[0024] In one embodiment, the sensor described herein includes one or more integrated spectrometers. The spectrometers can detect the spectrum of light reflected from the internal surfaces of the chamber to be projected onto the sensor. Embodiments may include multiple light sources to provide spatial detail without requiring sensor movement. Unlike optical cameras, using spectrometers allows for obtaining detailed information about the internal surface layers (e.g., composition, thickness, etc.). Spectrometers can also be used to detect plasma properties. It will be understood that the spectral reflectance obtained by the sensor can be used to determine the material composition. For example, different material compositions will have different refractive indices that can be used for material composition determination. Furthermore, spectral reflectance can be used to measure layer thickness and / or provide information about the plasma. In the case of plasma detection, the sensor may not require a light source because the plasma emits light that can be directly measured.

[0025] In one embodiment, processing operations (e.g., etching, deposition, treatment, etc.) may be performed within a chamber. The processing operations may be partially controlled by feedback data generated by a sensor array. For example, the feedback data may be used to tune one or more processing parameters of the processing operation to provide more optimized processing results.

[0026] See now Figure 1A According to one embodiment, a cross-sectional view of sensor 100 is illustrated. In one embodiment, sensor 100 may include a board 110, such as a printed circuit board (PCB). Board 110 may include electrical wiring (e.g., traces, pads, etc.) for electrical coupling between components of sensor 100.

[0027] In one embodiment, spectrometer 120 is provided on plate 110. In one embodiment, spectrometer 120 can be any suitable spectrometer architecture. Spectrometer 120 can be a low-profile spectrometer 120. For example, the thickness of spectrometer 120 can be about 5 mm or less, or about 1 mm or less. Similarly, the area occupied by spectrometer 120 can also be relatively small. For example, the area occupied can be about 20 mm by about 20 mm or less. In one embodiment, the area occupied by spectrometer 120 is about 5 mm by about 5 mm or less. The low profile and small area of ​​spectrometer 120 allow sensor 100 to be integrated into various locations within the processing chamber, which will be described in more detail below. In one embodiment, any type of spectrometer 120 can be used, which can be manufactured as a low-profile and small-area device. For example, spectrometer 120 can include diffraction and / or grating type spectrometers, photonic crystal and / or filter type spectrometers, multispectral imager type spectrometers, or interferometer-based spectrometers. In one embodiment, the spectrometer 120 may be replaced by a reflectometer, or both the spectrometer 120 and the reflectometer may be used.

[0028] In one embodiment, the spectrometer 120 is communicatively coupled to the processor 125. Figure 1A The processor 125 is located adjacent to the spectrometer 120 and near the edge of the plate 110. However, it will be understood that the processor 125 can be provided at any desired location. In one embodiment, the processor 125 can be communicatively coupled to the spectrometer 120 via any suitable interconnect architecture. In one embodiment, a cable or flexible circuit (not shown) is provided between the spectrometer 120 and the processor 125. In other embodiments, the spectrometer 120 can be coupled to the processor 125 through the plate 110.

[0029] Processor 125 may include dies suitable for processing spectra obtained by spectrometer 120. Processor 125 may also include functionality for controlling and / or processing data from spectrometer 120. For example, processor 125 may instruct spectrometer 120 when to collect data. In embodiments with light source 122, processor 125 may also control the light source. In one embodiment, light source 122 may be any suitable light source architecture. In a particular embodiment, light source 122 is a light-emitting diode (LED), but in other embodiments it may include a light source with a different spectrum.

[0030] Processor 125 may include memory or use external memory to store data. In other embodiments, processor 125 may include a wireless communication interface (e.g., a wireless transceiver) to transmit data (raw spectral data or processed data) to an external device. However, when sensor 100 is hardwired to the processing chamber, wired input / output connections may also be used to send and / or receive data. In one embodiment, sensor 100 may be powered by power supply 127. Power supply 127 may be a battery or the like. However, in some embodiments, sensor 100 may be directly wired to power the processing chamber, and a dedicated power supply 127 may not be required.

[0031] In one embodiment, the sensor 100 may further include a housing 111. The housing 111 may be made of a material resistant to the processing conditions within a given chamber. The housing 111 protects the internal components of the sensor 100 from damage. For example, the housing 111 may be made of ceramic, metallic, or any other suitable material. The housing 111 may have dimensions that allow for easy integration into various locations within the chamber. For example, the housing 111 may have dimensions of approximately 75 mm by approximately 75 mm by approximately 15 mm. However, smaller or larger dimensions may also be provided. In one embodiment, a window 112 may be provided within the housing 111. The window 112 may be optically transparent.

[0032] exist Figure 1AIn this illustration, sensor 100 is shown as a fixed sensor configured to be mounted at various locations within the processing tool. However, the implementation is not limited to this configuration. For example, board 110 may have a wafer form factor (e.g., 200 mm, 300 mm, 450 mm, etc.) or any other form factor. Sensor 100 on wafer form factor board 110 can be inserted into and removed from the chamber to provide spatial monitoring throughout the chamber. In this manner, sensor 100 can be described as an instrumentation substrate, such as an instrumentation wafer.

[0033] See now Figure 1B The illustration shows a cross-sectional view of a sensor 100 according to an additional embodiment. In one embodiment, in addition to the dimensions of the plate 110 and the layout of the components, Figure 1B The sensor 100 in the middle can be substantially similar to Figure 1A The sensor 100 is located on one side of the plate 110. Instead of having all components on one side, one or more components are movable to the back side of the plate 110. For example, the processor 125 and power supply 127 are movable to the back side of the plate 110. In this embodiment, through-holes (not shown) may be provided through the plate 110 to communicatively and electrically couple the components together. Moving one or more components to the back side of the plate 110 allows for a reduction in the size of the plate 110. However, this embodiment may come at the cost of a thicker Z-height. In one embodiment, a window 112 may be provided within the housing 111. The window 112 may be optically transparent.

[0034] See now Figure 1C The illustration shows a plan view of a sensor 100 according to one embodiment. The sensor 100 may include a housing 111. The housing 111 may have a window 112 provided above a spectrometer 120. One or more light sources 122 may also be exposed through the window 112. The window 112 may be optically transparent. This allows electromagnetic radiation to pass through the housing 111. For example, the window 112 may be any optically transparent material, such as sapphire, quartz, or the like. In some embodiments, the window 112 may also include an anti-reflective coating. In the illustrated embodiment, the window 112 is illustrated as circular. However, rectangular or other shaped windows may be used. Furthermore, although in Figure 1C The diagram illustrates a single window 112, but multiple windows 112 can be used. For example, in the case where multiple spectrometers 120 are distributed on the plate 110, each spectrometer 120 can have a dedicated window. Although in Figure 1C The diagram illustrates window 112. It will be understood that housing 111 may comprise optically transparent materials (e.g., sapphire, quartz, etc.). In this example, a dedicated window 112 can be omitted because the entire housing 111 is optically transparent.

[0035] See now Figure 2 The illustration shows a cross-sectional view of a sensor 200 inside a chamber body 281 according to one embodiment. In a particular embodiment, layer 285 may be deposited on the inner surface of the chamber body 281. Layer 285 may be a conditioning layer or may be the result of deposition of byproducts of processing operations (e.g., etching byproducts, redeposition, etc.). Although illustrated as a single layer 285, it will be understood that multiple layers of different materials may also be included as part of layer 285.

[0036] In one embodiment, sensor 200 may be integrated into a portion of a chamber. For example, sensor 200 may be provided as part of a chamber wall, liner, cover, base, or the like. In one embodiment, sensor 200 may include a housing 211 having a window 212. In one embodiment, plate 210 may be provided within housing 211. In one embodiment, spectrometer 220 is illustrated on plate 210.

[0037] In one embodiment, multiple light sources 222 may be provided on plate 210. In another embodiment, each light source 222 may be optically coupled to a single spectrometer 220. For example, an optical path 225 may begin at each of the light sources 222, reflect from different locations on layer 285, and terminate at the spectrometer 220. Thus, multiple locations on layer 285 can be analyzed without requiring lateral movement of sensor 200. Each of the light sources 222 may include a lens 226 to focus light such that the optical path 225 terminates at spectrometer 220. In the illustrated embodiment, six light sources 222 are shown. However, it will be understood that any number of light sources 222 (e.g., two or more light sources 222) may be used to provide spatial analysis of layer 285.

[0038] See now Figure 3 The illustration shows a cross-sectional view of a chamber 350 according to one embodiment. In one embodiment, the chamber 350 may include a chamber body 351. The chamber body 351 may include a housing for processing a semiconductor substrate (e.g., a wafer) 355 or the like. In the illustrated embodiment, the chamber body 351 is illustrated as a substantially monolithic chamber. However, it will be understood that the plasma processing chamber 350 may include separate components to fabricate the chamber body 351. For example, a cover or spray nozzle 353 may be provided as a component distinct from the sidewalls of the chamber body 351. In one embodiment, other components may be provided within the chamber body 351. For example, chamber liners, processing rings, etc., may be included within the chamber body. In one embodiment, a base 352 may be used to support the substrate 355.

[0039] In one embodiment, chamber 350 may be any chamber suitable for processing a semiconductor substrate or other substrates useful in the context of semiconductor manufacturing. For example, chamber 350 may be a plasma chamber, such as a plasma deposition or plasma etching chamber. In other embodiments, chamber 350 may be a chemical vapor deposition (CVD) chamber, an atomic layer deposition (ALD) chamber, a physical vapor deposition (PVD) chamber, a thermal processing chamber (e.g., a rapid thermal processing (RTP) chamber), a CMP tool with a polishing pad, or any other processing chamber used in a semiconductor processing environment. In one embodiment, chamber 350 may be one chamber in a cluster of tools. That is, multiple chambers 350 may be coupled together through a central chamber.

[0040] In one embodiment, an array of sensors 300 may be provided throughout the chamber 350. For example, five sensors 3001-3005 are present. Figure 3 The sensor 300 is integrated into or onto a component of multiple different chambers 350. As used herein, "integrated into" can mean a sensor embedded, partially embedded, or disposed in a cavity on the surface of a component within chamber 350. Integration can also mean electrical coupling (e.g., to provide power or data communication).

[0041] In one embodiment, the first sensor 3001 and the second sensor 3002 may be integrated with the cover 353. Sensors 3001 and 3002 may have a face downwards toward the base 352, as indicated by the dashed lines. In some embodiments, the surface of the base 352 can be studied when the substrate 355 is absent. Sensors 3001 and 3002 of the cover 353 can also be used to study the properties of a plasma formed in the chamber 350 above the base. Sensor 3001 can analyze the center of the plasma, and sensor 3002 can analyze the edges of the plasma to determine the center-to-edge difference in the plasma.

[0042] In one embodiment, the third sensor 3003 and the fourth sensor 3004 may be integrated with the sidewall of the chamber body 351. The third sensor 3003 and the fourth sensor 3004 may be oriented to determine surface conditions on the chamber body 351 on opposite sides of the chamber 350. Furthermore, the offset height of the third sensor 3003 and the fourth sensor 3004 may be used to determine top-to-bottom differences in the plasma. In one embodiment, a fifth sensor 3005 may be provided along the bottom of the chamber body 351. The fifth sensor 3005 may monitor a portion of the base 352 or other surfaces beneath the substrate 355. In some embodiments, the sensor 300 may also be configured to provide measurements of the surface of the cover 353.

[0043] In addition to monitoring chamber 350, embodiments may also include the ability to monitor the gas line 460 fed into chamber 350. For example, in Figure 4A The diagram illustrates a cross-sectional view of gas line 460. In one embodiment, gas line 460 may be part of a source gas system that supplies gas to chamber 350. In other embodiments, gas line 460 may be part of an exhaust line that removes gas and other byproducts from chamber 350.

[0044] In one embodiment, the gas line 460 may include an inner surface 461. During gas flow through the inner surface 461, deposits 463 may form on the inner surface 461. The deposits 463 may affect the gas flow through the gas line 460 or be a source of contamination for the gas flowing through the gas line 460. Therefore, it is desirable to monitor the inner surface 461 of the gas line 460 (e.g., to determine the material composition and / or thickness of the deposits 463).

[0045] See now Figure 4B The figure illustrates a cross-sectional view of a gas line 460 according to one embodiment. As shown, the gas line 460 may include an integrated sensor 400. The sensor 400 is positioned within the thickness of the gas line 460 such that the top surface of the gas line 460 is substantially coplanar with the inner surface 461 of the gas line 460. However, the top surface of the sensor 400 may be positioned above or away from the inner surface 461 of the gas line 460. As shown, the wall thickness of the gas line 460 may be non-uniform. For example, a thicker portion of the gas line 460 may be provided to accommodate the sensor 400. In some embodiments, the thicker portion may include a coupling unit for the sensor 400. The coupling unit may be connected to the gas line 460 on both the left and right sides. That is, the sensor 400 may be a discrete component of the gas line 460.

[0046] In one embodiment, sensor 400 may be similar to any of the sensor architectures described in more detail herein. For example, sensor 400 may include a plate 410. Spectrometer 420 and one or more light sources 422 may be located on the surface of plate 410. Other components (such as processors, power supplies, communication modules, etc.) may also be included on plate 410. In one embodiment, plate 410, spectrometer 420, and light sources 422 may be enclosed by housing 411. Window 412 may be provided in housing 411 to allow light from light source 422 to enter the interior of gas line 460 and be reflected back to spectrometer 420.

[0047] See now Figure 4C The illustration shows a cross-sectional view of a gas line 460 according to an additional embodiment. In one embodiment, the gas line 460 may be substantially similar to... Figure 4A The gas line 460 is modified, but a sensor 400 is added. Instead of integrating the sensor 400 into the wall of the gas line 460 (e.g., similar to...),... Figure 4B Sensor 400 may be provided outside gas line 460. A window 465 extending through the thickness of gas line 460 provides an optical inlet / outlet for studying the internal surface 461 of gas line 460. Sensor 400 may be provided on the outer surface of window 465. Sensor 400 may be substantially similar to the above description regarding... Figure 4B The sensor 400 is described.

[0048] See now Figure 5 The illustration shows a plan view of a sensor 500 according to an additional embodiment. As shown, the sensor 500 includes a plate 510. In the illustrated embodiment, for simplicity, only a light source 522, a set of repeaters 529 or additional light sources, and a spectrometer 520 are shown. However, similar to the embodiments described above, the sensor 500 may also include a processor, a power supply, and the like.

[0049] In one embodiment, a single light source 522 can be used to feed light to multiple repeaters 529. For example, Figure 5 The diagram illustrates three repeaters. Each repeater 529 can be coupled to a different spectrometer 520. In other embodiments, multiple repeaters 529 can be coupled to a single spectrometer 520. In one embodiment, a repeater 529 is optically coupled to a light source 522 via an optical waveguide 527. Repeaters 529 may include lenses or the like for optical coupling to spectrometer 520.

[0050] See now Figure 6The figure illustrates a cross-sectional view of a system 650 according to one embodiment. As shown, the system 650 may include a chamber body 651. A gas inlet 6601 and a gas outlet 6602 may be connected to the chamber body 651. A base 652 may support a substrate 655 beneath a plasma 657. In one embodiment, the system 650 may include a plurality of sensors 6001-6003. Sensor 600 may be similar to any of the sensor architectures described in more detail herein. For example, sensor 600 may include a spectrometer. Sensor 600 may be a small-form-factor device. Therefore, sensor 600 may be integrated into various locations throughout the system 650.

[0051] In one embodiment, a first sensor 6001 is coupled to a gas inlet 6601, and a second sensor 6002 is integrated into a chamber body 651 to sense one or more properties within the chamber body 651. Although illustrated on a sidewall, it will be understood that the sensor 600 can be formed at any location within the chamber body 651 (e.g., sidewall, cover, gasket, processing ring, bottom, etc.). Furthermore, although a single second sensor 6002 is illustrated, it will be understood that, similar to the embodiments described above, an array of sensors can be integrated with the chamber body 651. In one embodiment, a third sensor 6003 may be provided at a gas outlet 6602.

[0052] In one embodiment, sensor 600 may be communicatively coupled to controller 658 (as indicated by the dashed line). The communicative coupling may be implemented wirelessly or via a hardwired connection. Controller 658 may be used to control processing parameters (e.g., pressure, temperature, plasma properties, etc.) within chamber body 651. Controller 658 may use feedback data generated by one or more sensors 600 to modify the processing parameters to improve the uniformity of results across individual substrates 655 (e.g., improve layer thickness uniformity or the like).

[0053] See now Figure 7 The illustration shows a process flow diagram of a process 780 carried out in a chamber according to one embodiment. In one embodiment, process 780 may begin with operation 781, which includes initiating a process in a chamber having an array of integrated diagnostic devices distributed throughout the chamber. The diagnostic devices may be any of the sensors described in more detail herein. For example, the sensor may be integrated into the chamber body at various locations (e.g., walls, covers, gaskets, bottoms, processing rings, etc.). The sensor may also be included in a gas inlet or outlet (i.e., an exhaust device). The sensor may include a spectrometer and optionally a light source. The sensor's form factor allows for easy integration into various locations within the chamber. In some embodiments, the sensor is wirelessly coupled to a controller or hardwired to a controller.

[0054] In one embodiment, the process within the chamber can be any process suitable for semiconductor manufacturing operations. For example, the process can be a deposition process (e.g., ALD, CVD, or PVD, all of which can be performed with or without plasma), an etching process, or a processing process (e.g., thermal treatment, plasma treatment, etc.) or a polishing process (CMP). In a particular embodiment, the process can be a chamber cleaning or chamber drying process. Chamber cleaning or drying processes can be performed to modify the coating along the inner surface of the chamber.

[0055] In one embodiment, process 780 can continue at operation 782, which includes using an array of diagnostic devices to generate feedback data, including one or more of the following: the material composition of the layers, the thickness of the layers, and the spectrum of the plasma in the chamber. Such feedback data types can be used to improve the process results of the wafer within the chamber. Furthermore, due to the use of the array of diagnostic devices, a spatial mapping of the chamber and / or plasma can be obtained. Therefore, parameters (such as center-to-edge measurements) can also be generated as part of the feedback data to provide even better wafer uniformity results.

[0056] In one embodiment, process 780 can continue at operation 783, which includes using feedback data to control the processing parameters of the process within the chamber. For example, the feedback data can be used as input to control the processing parameters, such as, but not limited to, gas flow rate, pressure, temperature, voltage of different electrodes, and the like.

[0057] In one particular implementation, feedback data can be used to provide closed-loop control of the process within the chamber. That is, feedback data can be repeatedly supplied to the controller to modify processing parameters throughout the process implemented in the chamber. In some implementations, feedback data can be used as endpoint detection. For example, the process can be terminated when a layer reaches a specific thickness or material composition.

[0058] See now Figure 8A block diagram of an exemplary computer system 800 of a processing tool is shown according to one embodiment. In one embodiment, the computer system 800 is coupled to and controls processing within the processing tool. The computer system 800 may be connected (e.g., networked) to other machines in a local area network (LAN), an intranet network, an extranet network, or the Internet. The computer system 800 may operate in a client-server network environment within the capabilities of a server or client machine, or as a peer machine in a peer-to-peer (or distributed) network environment. The computer system 800 may be a personal computer (PC), a tablet PC, a set-top box (STB), a personal digital assistant (PDA), a cellular phone, a network device, a server, a network router, a switch or bridge, or any machine capable of executing a set of instructions (continuously or otherwise) that specifies actions to be taken by that machine. Furthermore, although only a single machine of computer system 800 is shown, the term "machine" should also be considered to include any set of machines (e.g., computers) that independently or jointly execute instruction sets (or multiple instruction sets) to perform any one or more methodologies described herein.

[0059] Computer system 800 may include a computer program product or software 822 having a non-transitory machine-readable medium thereon storing instructions that can be used to program computer system 800 (or other electronic device) to perform a process according to an implementation. Machine-readable medium includes any mechanism for storing or transmitting information in a form readable by a machine (e.g., a computer). For example, machine-readable (e.g., computer-readable) media include machine-readable (e.g., computer-readable) storage media (e.g., read-only memory (“ROM”), random access memory (“RAM”), disk storage media, optical storage media, flash memory devices, etc.), machine-readable (e.g., computer-readable) transmission media (electrical, optical, acoustic, or other forms of propagated signals (e.g., infrared signals, digital signals, etc.)), etc.

[0060] In one embodiment, the computer system 800 includes a system processor 802, main memory 804 (e.g., read-only memory (ROM), flash memory, dynamic random access memory (DRAM), such as synchronous DRAM (SDRAM) or Rambus DRAM (RDRAM), etc.), static memory 806 (e.g., flash memory, static random access memory (SRAM), etc.), and auxiliary memory 818 (e.g., data storage device), which communicate with each other via a bus 830.

[0061] System processor 802 represents one or more general-purpose processing devices, such as a microsystem processor, a central processing unit, or the like. More specifically, the system processor may be a complex instruction set computing (CISC) microsystem processor, a reduced instruction set computing (RISC) microsystem processor, a very long instruction word (VLIW) microsystem processor, or a system processor implementing other instruction sets, or a system processor implementing a combination of instruction sets. System processor 802 may also be one or more special-purpose processing devices, such as an application-specific integrated circuit (ASIC), a field-programmable gate array (FPGA), a digital signal system processor (DSP), a network system processor, or the like. System processor 802 is configured to execute processing logic 826 for performing the operations described herein.

[0062] The computer system 800 may further include a system network interface device 808 for communicating with other devices or machines. The computer system 800 may also include a video display unit 810 (e.g., a liquid crystal display (LCD), a light emitting diode display (LED), or a cathode ray tube (CRT)), an alphanumeric input device 812 (e.g., a keyboard), a cursor control device 814 (e.g., a mouse), and a signal generation device 816 (e.g., a speaker).

[0063] Auxiliary memory 818 may include machine-accessible storage medium 832 (or more specifically, computer-readable storage medium) storing one or more instruction sets (e.g., software 822) embodying any of the methodologies or functions described herein. Software 822 may also reside wholly or at least partially within main memory 804 and / or system processor 802 during its execution, via computer system 800, main memory 804, and system processor 802, which also constitute machine-readable storage media. Software 822 may further be transmitted or received over network 860 via system network interface device 808. In one embodiment, network interface device 808 may operate using RF coupling, optical coupling, acoustic coupling, or inductive coupling.

[0064] Although machine-accessible storage medium 832 is shown as a single medium in the exemplary embodiment, the term "machine-readable storage medium" should be considered to include a single medium or multiple media (e.g., a centralized or distributed database, and / or associated caches and servers) that store one or more instruction sets. The term "machine-readable storage medium" should also be considered to include any medium capable of storing or encoding instruction sets for execution by a machine and causing the machine to execute any one or more methodologies. The term "machine-readable storage medium" should therefore be considered to include, but is not limited to, solid-state memory, as well as optical and magnetic media.

[0065] Specific exemplary embodiments have been described in the foregoing specification. It is obvious that various modifications can be made thereto without departing from the scope of the following claims. The specification and drawings are therefore to be considered illustrative rather than restrictive.

Claims

1. A semiconductor processing tool, the semiconductor processing tool comprising: Chambers; and A diagnostic device, integrated with the chamber, wherein the diagnostic device comprises: plate; Spectrometer, the spectrometer on the plate; and The outer casing surrounds the plate.

2. The semiconductor processing tool of claim 1, wherein the diagnostic device is integrated into the wall, cover, clamp, or liner of the chamber.

3. The semiconductor processing tool of claim 1, wherein the diagnostic device is integrated into a gas line entering or exiting the chamber.

4. The semiconductor processing tool of claim 1, further comprising: Multiple diagnostic devices are integrated into the chamber.

5. The semiconductor processing tool of claim 1, further comprising: A light source is located on the plate.

6. The semiconductor processing tool of claim 5, wherein a plurality of light sources are configured to be optically coupled to the spectrometer.

7. The semiconductor processing tool of claim 1, further comprising: Multiple spectrometers are located on the plate.

8. The semiconductor processing tool of claim 1, wherein the housing includes a window, and wherein the window is optically transparent and / or wherein the window is coated with an anti-reflective coating.

9. The semiconductor processing tool of claim 1, wherein the diagnostic device includes an internal power supply.

10. The semiconductor processing tool of claim 1, wherein the diagnostic device comprises a wireless transceiver.

11. A semiconductor processing tool, the semiconductor processing tool comprising: Chambers; and A set of diagnostic devices integrated with the chamber, wherein the integrated diagnostic devices are configured to provide layer thickness measurement, layer composition measurement, and / or plasma property measurement.

12. The semiconductor processing tool of claim 11, wherein the integrated diagnostic device is configured to provide spatial mapping of layer thickness, spatial mapping of plasma properties, and / or spatial mapping of the layer composition within the chamber.

13. The semiconductor processing tool of claim 11, wherein the group diagnostic apparatus comprises a plurality of spectrometers and / or reflectometers.

14. The semiconductor processing tool of claim 13, wherein the group diagnostic device comprises one or more light sources.

15. The semiconductor processing tool of claim 12, wherein the group diagnostic apparatus comprises at least one diagnostic device along a gas inlet line and / or an exhaust line.

16. A method of processing a semiconductor device, the method comprising: The process is initiated in the chamber having an array of integrated diagnostic devices distributed within the chamber; The array of diagnostic devices is used to generate feedback data, which includes one or more of the following: the material composition of a layer, the thickness of the layer, and the spectrum of the plasma in the chamber; and The feedback data is used to control the processing parameters of the process within the chamber.

17. The method of claim 16, wherein the process is a chamber cleaning process or a chamber drying process.

18. The method of claim 16, wherein determining the spectrum of the plasma comprises: The spatial distribution of plasma material within the chamber was discovered.

19. The method of claim 16, wherein the feedback data is used to provide closed-loop control of the process.

20. The method of claim 16, further comprising: The process ends when the spatial distribution of the material composition and / or thickness or spectrum of the layer is at a predetermined value.

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