Tantalum nitride film growth method and tantalum nitride film
By growing tantalum nitride thin films on complex-shaped substrates using atomic layer deposition, the problem of poor film flatness in existing technologies has been solved, achieving atomic-level thickness uniformity and performance consistency, thus improving the film quality of microelectronic devices.
Patent Information
- Application Number
- CN202510881715.0
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-06-27
- Publication Date
- 2025-11-04
AI Technical Summary
In the existing technology, vapor deposition is difficult to achieve uniform deposition of tantalum nitride films on substrates with complex shapes, resulting in poor film flatness and limiting its application in microelectronic devices.
Atomic layer deposition (ALD) is employed, which involves alternating the introduction of a target tantalum source, a nitrogen source, and an inert gas, combined with precise process parameter control, to perform N cycles of deposition followed by annealing, thereby forming a tantalum nitride film with atomically uniform thickness.
It achieves consistent surface properties on complex substrates, improves the thickness uniformity and conductivity of thin films, and meets the low resistance requirements of microelectronic devices.
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Abstract
Description
TECHNICAL FIELD
[0001] The application relates to the field of semiconductor technology research, and particularly relates to a tantalum nitride film growth method and a tantalum nitride film. BACKGROUND
[0002] With the continuous development of microelectronic and semiconductor technology, the demand for high-performance thin film materials is increasing, and the tantalum nitride (TaN) film as an important material has a wide application prospect in the fields of microelectronic devices and semiconductor manufacturing due to its excellent conductivity, good thermal stability and chemical stability, for example, can be used as a barrier layer of metal interconnection lines to prevent the diffusion of metal atoms from adversely affecting the performance of semiconductor devices.
[0003] In the prior art, there are various methods for preparing the tantalum nitride film, such as physical vapor deposition (PVD) and chemical vapor deposition (CVD); however, these traditional methods have certain limitations in preparing the thin film; for example, the PVD method has a relatively fast deposition rate, and it is difficult to achieve precise thickness control. The CVD method is greatly affected by the gas flow, and there is also a problem of non-uniform deposition of the thin film, and the reaction by-products may be difficult to effectively remove, which affects the purity and performance of the thin film; therefore, the PVD and CVD methods are difficult to achieve uniform deposition of the thin film on a complex-shaped substrate, which limits the application of the tantalum nitride film in microelectronic devices.
[0004] Therefore, it is urgent to design a more advanced tantalum nitride film growth method to solve the problem of poor flatness of the thin film formed by the gas phase deposition method in the prior art. SUMMARY
[0005] The application aims to provide a tantalum nitride film growth method and a tantalum nitride film, which comprises the following steps: providing a target substrate; determining a deposition environment in a target reaction chamber based on target process parameters; using a target tantalum source as a precursor, a target nitrogen source as a reactant and a target inert gas as a purge gas, performing N times of cyclic deposition on the target substrate placed in the target reaction chamber according to a preset atomic layer deposition method until a preset deposition time is reached, to obtain a target thickness of a grown tantalum nitride film layer; and performing annealing treatment on the target thickness of the grown tantalum nitride film layer to obtain a target tantalum nitride film. The application realizes the growth of a tantalum nitride film with atomic-level thickness uniformity, guarantees the consistency of the performance of a complex substrate surface, and solves the problem of poor flatness of the thin film formed by the gas phase deposition method in the prior art.
[0006] In order to achieve the above-mentioned purpose, the application provides the following technical scheme:
[0007] In a first aspect, the present application provides a method for growing a tantalum nitride film, which can include:
[0008] providing a target substrate;
[0009] determining a deposition environment in a target reaction chamber based on target process parameters;
[0010] performing N times of cyclic deposition on the target substrate placed in the target reaction chamber according to a preset atomic layer deposition method, until a preset deposition time is reached, to obtain a target thickness of a grown tantalum nitride film layer, wherein the atomic layer deposition method uses a target tantalum source as a precursor, a target nitrogen source as a reactant, and a target inert gas as a purge gas.
[0011] performing annealing treatment on the target thickness of the grown tantalum nitride film layer to obtain a target tantalum nitride film.
[0012] Preferably, the preset atomic layer deposition method can include:
[0013] for any one atomic layer deposition, inputting the target tantalum source into the target reaction chamber for a first pulse time to perform precursor atomic layer deposition and obtain a tantalum deposition layer;
[0014] inputting the target inert gas into the target reaction chamber for a second pulse time to perform purging;
[0015] inputting the target nitrogen source into the target reaction chamber for a third pulse time to perform chemical reaction with the tantalum deposition layer and obtain a deposited tantalum nitride film layer;
[0016] inputting the target inert gas into the target reaction chamber for the second pulse time to perform purging.
[0017] Preferably, the determination of the deposition environment in the target reaction chamber based on the target process parameters can include:
[0018] determining the target process parameters according to the growth and reaction characteristics of the target tantalum source and the target nitrogen source, wherein the target process parameters at least include a target chamber temperature and a target chamber pressure of the target reaction chamber.
[0019] Preferably, the method can further include: determining the first pulse time, the second pulse time, and the third pulse time according to the growth and reaction characteristics of the target tantalum source and the target nitrogen source, in combination with the target process parameters.
[0020] Preferably, when the target nitrogen source is inputted for the third pulse time, a target power plasma can be used to provide reaction energy for the target nitrogen source.
[0021] Preferably, the target tantalum source can be pentakis(dimethylamino) tantalum.
[0022] The target nitrogen source can include any one of ammonia, a mixed gas of ammonia and hydrogen, or a mixed gas of nitrogen and hydrogen.
[0023] Preferably, the thickness of the film obtained by any one atomic layer deposition is 0.1 nm to 0.3 nm.
[0024] Preferably, the annealing treatment of the grown tantalum nitride film layer with the target thickness can include:
[0025] Based on the target annealing time and the target annealing time, the grown tantalum nitride film layer with the target thickness is annealed to obtain the target tantalum nitride film.
[0026] Preferably, the target substrate can include a silicon substrate, a sapphire substrate or a silicon carbide substrate after pre-treatment.
[0027] The pre-treatment can at least include cleaning or flatness treatment.
[0028] In a second aspect, the present application provides a tantalum nitride film, which is prepared by the tantalum nitride film growth method of the first aspect.
[0029] Compared with the prior art, the present application provides a tantalum nitride film growth method, which provides a target substrate and determines the deposition environment in a target reaction chamber based on target process parameters; further, a target tantalum source is used as a precursor, a target nitrogen source is used as a reactant, and a target inert gas is used as a purge gas, and the target substrate placed in the target reaction chamber is subjected to N times of cyclic deposition according to a predetermined atomic layer deposition method until a predetermined deposition time is reached, to obtain a grown tantalum nitride film layer with a target thickness; finally, the grown tantalum nitride film layer with the target thickness is annealed to obtain a target tantalum nitride film; based on this, the present application uses the atomic layer deposition method to cyclically deposit the tantalum nitride film on the substrate surface by using the target tantalum source as the precursor, the target nitrogen source as the reactant, and the target inert gas as the purge gas in the target reaction chamber after setting the target process parameters such as deposition temperature, pressure, and precursor pulse time and removal time, which can accurately control the deposition thickness and improve the step coverage, obtain the tantalum nitride film with atomic-level thickness uniformity, and guarantee the consistency of the complex substrate surface performance; and solve the problem of poor flatness of the film formed by the vapor deposition method in the prior art. BRIEF DESCRIPTION OF DRAWINGS
[0030] The accompanying drawings, which are included to provide a further understanding of the application and are incorporated in and constitute a part of this application, illustrate embodiments of the application and together with the description serve to explain the application. In the drawings:
[0031] Figure 1 A schematic diagram of the main process of a method for growing a tantalum nitride film according to the present application;
[0032] Figure 2 A schematic diagram of an electron microscope image of a tantalum nitride film grown according to the method for growing a tantalum nitride film according to the present application. DETAILED DESCRIPTION
[0033] In order to clearly describe the technical solutions of the embodiments of the present application, in the embodiments of the present application, the terms "first", "second", etc. are used to distinguish the same or similar items with basically the same function and effect. For example, the first threshold and the second threshold are only used to distinguish different thresholds, and do not limit the order of execution. Those skilled in the art can understand that the terms "first", "second", etc. do not limit the number and execution order, and the terms "first", "second", etc. also do not necessarily mean different.
[0034] It should be noted that in the present application, the words "exemplary" or "for example" are used to mean serving as an example, instance, or illustration. Any embodiment or design described as "exemplary" or "for example" in the present application should not be interpreted as being more preferred or advantageous than other embodiments or design solutions. Rather, the use of the words "exemplary" or "for example" is intended to present concepts in a concrete manner.
[0035] In the present application, "at least one" means one or more, and "multiple" means two or more. The association relationship between the associated objects is described by "and / or", which means that there can be three relationships, for example, A and / or B, which can represent the following three cases: A exists alone, A and B exist together, B exists alone, where A and B can be singular or plural. The character " / " generally represents a "or" relationship between the associated objects. "At least one of the following" or similar expressions means any combination of these items, including any combination of single or multiple items. For example, at least one of a, b or c can represent: a, b, c, the combination of a and b, the combination of a and c, the combination of b and c, or the combination of a, b and c, where a, b and c can be single or multiple.
[0036] The physical vapor deposition method in the prior art is a technology of converting solid material into gas state by physical method, and then depositing on the surface of the substrate to form a thin film. The core principle is to gasify the source material by high-energy means (such as heating, sputtering or arc), and then condense into a film in a vacuum environment. The chemical vapor deposition method is a technology of generating a solid thin film on the surface of the substrate by gas phase chemical reaction. The core principle is that the precursor gas generates chemical reaction under the energy excitation of high temperature or plasma, and generates the target material and deposits on the substrate. In practical application, it is difficult for both methods to realize uniform deposition of thin film on the substrate with complex shape, which limits the application of the tantalum nitride thin film in microelectronic devices.
[0037] Therefore, the present application provides a tantalum nitride thin film growth method and a tantalum nitride thin film. The atomic layer deposition method is used to grow a tantalum nitride thin film with atomic level thickness uniformity on a target substrate, which improves the flatness of the grown thin film. The problem of poor flatness of the thin film formed by the gas phase deposition method in the prior art is solved.
[0038] It should be noted that the atomic layer deposition (ALD) technology is a new thin film preparation method, which provides an effective solution for preparing high-quality tantalum nitride thin film due to its unique layer-by-layer deposition mechanism. The ALD technology realizes accurate thin film thickness control and uniform thickness distribution by alternately introducing different precursor gases, so that the gas molecules react with the surface of the substrate. This layer-by-layer deposition method is especially suitable for preparing thin films with complex structure, such as the fine structure in three-dimensional integrated circuits.
[0039] Next, the technical solutions of the present application will be described in detail in combination with the drawings:
[0040] Please refer to Figure 1 , Figure 1 The main flowchart of a tantalum nitride thin film growth method provided by the present application. The execution subject of the method is the equipment provided by the present application.
[0041] In Figure 1 , the method can include:
[0042] Step 110: providing a target substrate.
[0043] In step 110, the target substrate is a substrate structure, and the substrate structure is a complex-shaped substrate (base), which generally refers to those substrates that have been specially treated or have special functions to meet the needs of specific applications. Silicon substrate, SOI (Silicon On Insulator) substrate, multi-substrate or hetero-substrate, etc.; among them, the SOI (Silicon On Insulator) substrate is a structure that introduces a layer of buried oxide (Buried Oxide, BOX) between the top layer of silicon and the back substrate. This structure has the advantages of small parasitic capacitance, high integration density, high speed, simple process, small short channel effect, and is particularly suitable for low-voltage and low-power circuits; the hetero-substrate refers to the use of different materials as the substrate to achieve specific electronic or optoelectronic properties. For example, using sapphire (Sapphire) as a substrate to grow GaN (Gallium Nitride) thin film to manufacture high-power, high-frequency electronic devices or light-emitting diodes.
[0044] Step 120: based on the target process parameters, determine the deposition environment in the target reaction chamber.
[0045] In step 120, based on the target process parameters determined in advance according to the precursor and the reactant, the parameters of the reaction chamber are set, so as to obtain the deposition environment in the target reaction chamber that meets the requirements for generating the corresponding thin film.
[0046] Step 130: using the target tantalum source as the precursor, the target nitrogen source as the reactant, and the target inert gas as the purge gas, depositing the target substrate placed in the target reaction chamber N times according to the preset atomic layer deposition method until the preset deposition time is reached, to obtain a grown tantalum nitride thin film layer with a target thickness.
[0047] Step 140: annealing the grown tantalum nitride thin film layer with a target thickness to obtain a target tantalum nitride thin film.
[0048] In steps 130 to 140, using the target tantalum source as the precursor, the target nitrogen source as the reactant, and the target inert gas as the purge gas, depositing the target substrate placed in the target reaction chamber N times according to the preset atomic layer deposition method until the preset deposition time is reached, to obtain a grown tantalum nitride thin film layer with a target thickness; then annealing the grown tantalum nitride thin film layer with a target thickness, so as to obtain a tantalum nitride thin film with atomic-level thickness uniformity. Among them, the atomic layer deposition method (ALD) alternately introduces precursor gas, each precursor reacts with the substrate surface to form a monolayer, and the reaction automatically stops after the formation of a monolayer. For example: S1: precursor A is adsorbed on the substrate surface to form a monolayer after saturation. S2: inert gas purges excess precursors. S3: precursor B is introduced and reacts with A to form a thin film and release by-products. S4: purge again to complete one cycle.
[0049] Based on the above, the application provides a method for growing a tantalum nitride film, which can prepare a tantalum nitride film with atomic-level thickness uniformity, guaranteeing the consistency of the performance of a complex substrate surface; solving the problem of poor flatness of the film formed by the gas phase deposition method in the prior art; the film has more excellent performance, the thickness uniformity is significantly improved, the physical and chemical properties such as conductivity are enhanced, and the demand for low resistance in the field of microelectronics is met.
[0050] Preferably, in step 110, the target substrate can include a complex substrate after pretreatment, for example, a silicon substrate, a sapphire substrate or a silicon carbide substrate; the pretreatment at least includes cleaning or flatness treatment, so as to ensure the cleanliness and flatness of the surface of the target substrate, and more conducive to the uniform growth of the tantalum nitride film.
[0051] Preferably, before step 120, that is, based on the target process parameters, the deposition environment in the target reaction cavity is determined, which can include the following steps: determining the target process parameters according to the growth and reaction characteristics of the target tantalum source and the target nitrogen source; the target process parameters at least include the target chamber temperature and the target chamber pressure of the target reaction cavity; and determining the first pulse time, the second pulse time and the third pulse time according to the growth and reaction characteristics of the target tantalum source and the target nitrogen source, combined with the target process parameters. Therefore, the selection of the precursor, the reactant and the deposition process parameters are optimized, which further improves the crystallinity and density of the film and reduces the resistivity.
[0052] Specifically, first, the target tantalum source, the target nitrogen source and the inert gas corresponding to the generation of the tantalum nitride film are selected, and then the growth and reaction characteristics of the target tantalum source and the target nitrogen source can be analyzed according to the test data, historical test data and research reports of the target tantalum source, the target nitrogen source and the inert gas, so as to determine the target process parameters; the target process parameters at least include the deposition temperature, the pressure control, the precursor pulse time, the reactant pulse time and the purge removal time.
[0053] For example, the common tantalum source can also include tantalum halides such as pentachloride tantalum (TaF5, TaCl5, and TaBr5, etc.) and metal organics of Ta. The deposition temperature required for the halide tantalum source is higher, and the generated product is corrosive, which has a great influence on the quality of the film. The conductive performance of the film thus grown is not as good as that of the film grown by the metal organics. PDMAT has less impurities and can generate a dense conductive film, and therefore, the preferred tantalum source in the present application is pentakis(dimethylamino) tantalum, i.e., the target tantalum source is pentakis(dimethylamino) tantalum. Further, the target nitrogen source can use any one of ammonia, a mixture of ammonia and hydrogen, or a mixture of nitrogen and hydrogen; test data show that ammonia can react with PDMAT efficiently to generate a high-quality tantalum nitride film, and therefore, ammonia is preferred in the present application. The inert gas is high-purity argon.
[0054] Then, according to the test data, historical test data, and research reports of pentakis(dimethylamino) tantalum, ammonia, and high-purity argon, the growth and reaction characteristics of the target tantalum source and the target nitrogen source are analyzed; the test data show that:
[0055] (1) Deposition temperature: At a lower temperature, the reactants cannot be activated, and the deposition effect is poor. At a higher temperature, PDMAT will decompose at high temperature, affecting the growth of the film, and increasing the content of carbon impurities. When the chamber temperature is set to 250-300°C, this temperature range helps the precursors to react fully, while avoiding damage to the substrate material.
[0056] (2) Pressure control: Maintaining the pressure in the deposition chamber at 0.1 torr can ensure good contact and reaction of the precursor gas with the substrate surface.
[0057] (3) Pulse time: If the pulse time is too short, the reactants cannot fill the reaction chamber and fully adhere to the substrate to react, resulting in uneven films; while a too long time will cause waste of reactants, which are deposited in the equipment pipeline, increasing the maintenance and cleaning cost, and will cause excessive adsorption of reactants. When the pulse times of PDMAT and ammonia are set to 0.4-0.6 s and 10-15 s, respectively, it can ensure that each pulse can provide sufficient amount of precursor molecules to uniformly cover the substrate surface.
[0058] (4) Purge time: After each precursor or reactant pulse, high-purity argon is used for purging, and the time is set to 15 s-20 s, which can completely remove the unreacted precursors and reaction byproducts in the chamber, preventing cross-contamination between the precursors.
[0059] Based on this, the first pulse time in the method for growing the tantalum nitride film is preferably 0.4-0.6s; the second pulse time is preferably 10-15s; the third pulse time is preferably 15s-20s, the deposition temperature is preferably 250-300℃, and the pressure is controlled at 0.1torr; so that uniform growth of the tantalum nitride film can be achieved.
[0060] Preferably, in step 130, the preset atomic layer deposition method can include:
[0061] For any one atomic layer deposition, a target tantalum source is input into a target reaction cavity for a first pulse time to perform precursor atomic layer deposition, so as to obtain a tantalum deposition layer; a target inert gas is input into the target reaction cavity for a second pulse time to perform purging; a target nitrogen source is input into the target reaction cavity for a third pulse time to perform chemical reaction with the tantalum deposition layer, so as to obtain a deposited tantalum nitride film layer; and the target inert gas is input into the target reaction cavity for the second pulse time to perform purging. When the target nitrogen source is input for the third pulse time, a target power plasma is used to provide reaction energy for the target nitrogen source.
[0062] Specifically, the cycle number is determined according to the required film thickness or according to the process requirement time. In actual application, the growth rate can be calibrated on a silicon wafer first to obtain the actual growth thickness of a single cycle, and then the cycle number is flexibly adjusted in combination with the design and requirements of a device to obtain a film with the required thickness. In order to ensure complete reaction of the precursor, a reaction time of 3-5s can be added after the precursor is input, and then purging is performed; that is, after ammonia is input into the target reaction cavity for the third pulse time, a reaction interval time of 3-5s can be added, and then the target inert gas is input into the target reaction cavity for the second pulse time to perform purging. It should be noted that when ammonia is input into the target reaction cavity for the third pulse time, a plasma with a power of 100-200W is used to provide reaction energy for ammonia. The plasma enhances the effect of ordinary thermal atomic layer deposition, so that a film with better conductivity and fewer impurities can be obtained, and the performance of the tantalum nitride film is further improved.
[0063] Preferably, the film thickness obtained for any one atomic layer deposition can be 0.1nm-0.3nm. Thus, the problem of affecting the overall performance of the deposited film due to too thick or too thin film thickness can be avoided.
[0064] Preferably, in step 140, the annealing treatment of the grown tantalum nitride film layer with the target thickness to obtain the target tantalum nitride film can include: based on a target annealing time and a target annealing temperature, annealing treatment is performed on the grown tantalum nitride film layer with the target thickness to obtain the target tantalum nitride film.
[0065] Specifically, the sample at the end of growth can be annealed at 500-800℃ for 10-60 minutes, the film quality of the sample is significantly improved, and a high uniformity and low resistivity film is obtained.
[0066] To sum up, the method for growing a tantalum nitride film provided by the application realizes atomic-level thickness uniformity of the tantalum nitride film, guarantees consistency of the performance of a complex substrate surface, optimizes precursor selection and process parameters, improves film crystallinity and density, reduces resistivity, and meets the demand for low resistivity in the field of microelectronics.
[0067] In a second aspect, the application provides a tantalum nitride film, please refer to Figure 2 , Figure 2 The electron microscope image of the tantalum nitride film grown by the method for growing a tantalum nitride film provided by the application is shown in the schematic diagram. The tantalum nitride film is obtained after the film is prepared by the method for growing a tantalum nitride film provided by the first aspect.
[0068] From Figure 2 It can be concluded without doubt that the tantalum nitride film prepared by the method for growing a tantalum nitride film provided by the application has good uniformity and reaches atomic-level thickness uniformity, significantly improves the superconducting performance, thickness uniformity, and defect control level of the film, and solves the problem of poor flatness of the film formed by the gas phase deposition method in the prior art.
[0069] Although the application has been described herein with reference to particular embodiments, those skilled in the art will understand that other variations and modifications can be made in the application claimed in the claims without departing from the spirit and scope of the application. In the claims, the word "comprising" does not exclude other components or steps, and "a" or "one" does not exclude a plurality. A single processor or other unit can implement several functions listed in the claims. Some measures described in mutually different dependent claims can be combined and produce good results.
[0070] Although the application has been described herein with reference to particular features and embodiments thereof, it will be apparent that various modifications and combinations can be made thereto without departing from the spirit and scope of the application. Accordingly, the description and drawings are to be regarded in an illustrative manner, and the scope of the application is to be defined by the appended claims. Obviously, those skilled in the art can make various modifications and changes to the application without departing from the spirit and scope of the application. Thus, if these modifications and changes belong to the scope of the claims of the application and their equivalent technologies, the application is intended to include these modifications and changes.
Claims
1. A method for growing a thin film of tantalum nitride, comprising: The method comprises the following steps: providing a target substrate; determining a deposition environment in a target reaction cavity based on target process parameters; carrying out N times of cyclic deposition on the target substrate placed in the target reaction cavity according to a preset atomic layer deposition method, until a preset deposition time is reached, to obtain a grown tantalum nitride film layer with a target thickness, wherein the atomic layer deposition method uses a target tantalum source as a precursor, a target nitrogen source as a reactant, and a target inert gas as a purge gas; carrying out annealing treatment on the grown tantalum nitride film layer with the target thickness to obtain a target tantalum nitride film.
2. The method for growing a tantalum nitride film according to claim 1, wherein The preset atomic layer deposition method comprises the following steps: for any one atomic layer deposition, inputting the target tantalum source into the target reaction cavity for a first pulse time to carry out precursor atomic layer deposition and obtain a tantalum deposition layer; inputting the target inert gas into the target reaction cavity for a second pulse time to carry out purging; inputting the target nitrogen source into the target reaction cavity for a third pulse time to carry out chemical reaction with the tantalum deposition layer and obtain a deposited tantalum nitride film layer; inputting the target inert gas into the target reaction cavity for the second pulse time to carry out purging.
3. The method for growing a tantalum nitride film according to claim 2, wherein Before the step of determining the deposition environment in the target reaction cavity based on the target process parameters, the method further comprises the following steps: determining the target process parameters according to growth and reaction characteristics of the target tantalum source and the target nitrogen source, wherein the target process parameters at least include a target chamber temperature and a target chamber pressure of the target reaction cavity.
4. The method for growing a tantalum nitride film according to claim 3, wherein The method further comprises the following steps: determining the first pulse time, the second pulse time, and the third pulse time according to the growth and reaction characteristics of the target tantalum source and the target nitrogen source in combination with the target process parameters.
5. The method for growing a tantalum nitride film according to claim 2, wherein When the target nitrogen source is inputted for the third pulse time, a target power plasma is used to provide reaction energy for the target nitrogen source.
6. The method for growing a tantalum nitride film according to claim 1, wherein The target tantalum source is pentakis(dimethylamido)tantalum. The target nitrogen source includes any one of ammonia, a mixed gas of ammonia and hydrogen, or a mixed gas of nitrogen and hydrogen.
7. The method for growing a tantalum nitride film according to claim 1, wherein The thickness of the film obtained for any one atomic layer deposition is 0.1 nm to 0.3 nm.
8. The method for growing a tantalum nitride film according to claim 1, wherein The method further comprises the following steps: carrying out annealing treatment on the grown tantalum nitride film layer with the target thickness based on a target annealing time and a target annealing temperature to obtain the target tantalum nitride film.
9. The method for growing a tantalum nitride film according to claim 1, wherein The target substrate includes a silicon substrate, a sapphire substrate, or a silicon carbide substrate after pretreatment. The pretreatment at least includes cleaning or flatness treatment.
10. A thin film of tantalum nitride, characterized by, The tantalum nitride film is obtained by using the tantalum nitride film growth method in any one of claims 1 to 9.