Plasma processing device and equipment thereof

Abstract

The invention discloses a plasma treatment device and equipment thereof, and belongs to the technical field of plasma treatment.The plasma treatment device comprises a furnace tube body, a furnace tube process cavity and a plasma reaction cavity are formed in the furnace tube body, and an air inlet pipe and an electrode bar are installed in the plasma reaction cavity; the gas inlet pipe is located on the side, away from the furnace tube process cavity, of the electrode bar, two electrode plates are arranged in the furnace tube body and located on the two sides of the electrode bar respectively, the bottom end of the gas inlet pipe is a gas inlet end used for introducing reaction gas, and the top end of the gas inlet pipe is a gas pipe tail end. Gas outlet units are arranged on the gas inlet pipe, and reaction gas in the gas inlet pipe is sprayed out through the gas outlet units and is uniformly distributed in the length direction of the electrode bar. The plasma ionization device has the effects of high ionization efficiency and uniform plasma distribution.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of plasma processing, and particularly relates to a plasma processing device and equipment thereof. BACKGROUND

[0002] Atomic layer deposition technology is a key process technology of semiconductors, and particularly, plasma enhanced atomic layer deposition technology. In the process, the reaction gas needs to be ionized, and the ionized gas forms plasma and then reacts with the source gas to form the required thin film.

[0003] At present, the chamber required for forming plasma is generally composed of a gas inlet pipe, an electrode rod and an electrode plate. The reaction gas enters the chamber through the gas inlet pipe, and the electrode rod and the electrode plate form an electric field in the chamber. The reaction gas is ionized into plasma under the action of the electric field. However, since the reaction gas enters the chamber from the gas inlet pipe, the reaction gas is unevenly distributed under the action of gravity, and then the ionized plasma is unevenly distributed in the chamber, which affects the deposition effect on the upper and lower wafer surfaces of the furnace tube. SUMMARY

[0004] In order to improve the problem of uneven distribution of plasma, the present application provides a plasma processing device and equipment thereof.

[0005] The plasma processing device and equipment thereof provided by the present application adopt the following technical scheme: A plasma processing device and equipment thereof, comprising a furnace tube body, a furnace tube process cavity and a plasma reaction cavity are arranged in the furnace tube body, a gas inlet pipe and an electrode rod are installed in the plasma reaction cavity, the gas inlet pipe is located on the side of the electrode rod away from the furnace tube process cavity, two electrode plates are arranged in the furnace tube body, the two electrode plates are respectively located on the two sides of the electrode rod, the bottom end of the gas inlet pipe is a gas inlet end for introducing reaction gas, the top end of the gas inlet pipe is a gas pipe end, a gas outlet unit is arranged on the gas inlet pipe, and the reaction gas in the gas inlet pipe is sprayed out through the gas outlet units and uniformly distributed along the length direction of the electrode rod.

[0006] By adopting the above technical scheme, the electrode rod and the gas inlet pipe are surrounded by the plasma reaction cavity on three sides. After the reaction gas is introduced from the gas inlet end of the gas inlet pipe, the reaction gas enters the plasma reaction cavity through the gas outlet units, and then is ionized under the action of the electric field formed by the electrode rod and the electrode plate. After the reaction gas is ionized into plasma, it enters the furnace tube process cavity. Since the amount of gas sprayed out by the gas outlet units is uniformly distributed, the plasma is uniformly distributed, which provides a uniform gas flow environment for the subsequent thin film deposition process. In addition, the gas inlet pipe is located on the side of the electrode rod away from the furnace tube process cavity, so that the reaction gas must be ionized before entering the furnace tube process cavity, thereby avoiding waste of the reaction gas and ensuring ionization efficiency.

[0007] Preferably, the gas outlet unit comprises a plurality of gas outlet holes, the plurality of gas outlet holes are arranged at equal intervals along the length direction of the gas inlet pipe, and the diameters of the plurality of gas outlet holes gradually increase from the gas inlet end to the gas pipe end.

[0008] By adopting the above technical solution, under the action of gravity, the amount of gas sprayed by the gas outlet hole close to the gas inlet end is larger, and the amount of gas sprayed by the gas outlet hole far from the gas inlet end is smaller. Since the diameters of the gas outlet holes gradually increase from the gas inlet end to the gas pipe end, the amounts of gas sprayed by the gas outlet holes are relatively uniform, thereby improving the non-uniform distribution of plasma caused by gravity and providing a uniform gas flow environment for the subsequent film deposition process.

[0009] Preferably, the gas outlet hole is arranged at the center of the side of the gas inlet pipe close to the electrode rod.

[0010] By adopting the above technical solution, the gas outlet hole is arranged at the center of the side of the gas inlet pipe close to the electrode rod, which helps the reaction gas to flow more smoothly near the electrode rod, so that the reaction gas can be fully ionized when passing through the plasma reaction chamber.

[0011] Preferably, the gas outlet unit is provided with two groups, the two groups of gas outlet units are arranged at intervals along the circumference of the gas inlet pipe, the included angle between the two groups of gas outlet units is not greater than 60°, and the distances between the two groups of gas outlet units and the electrode rod are equal.

[0012] By adopting the above technical solution, the arrangement of the two groups of gas outlet units makes the reaction gas enter the plasma reaction chamber more efficiently. After the reaction gas enters the plasma reaction chamber through the two groups of gas outlet units, it can diffuse around the electrode rod. The electrode rod hinders the reaction gas from directly entering the furnace pipe process chamber, so the reaction gas must pass through the ionization zone formed by the electrode rod and the electrode plate before entering the furnace pipe process chamber, thereby improving the ionization efficiency.

[0013] Preferably, the gas outlet unit comprises a plurality of gas hole units, the plurality of gas hole units are arranged at equal intervals along the length direction of the gas inlet pipe, the gas hole unit comprises a plurality of gas outlet round holes arranged at equal intervals along the length direction of the gas inlet pipe, and the diameters of the gas outlet round holes of the plurality of gas hole units gradually increase from the gas inlet end to the gas pipe end.

[0014] By adopting the above technical solution, the plurality of groups of gas outlet round holes with different diameters help to maintain the consistency of the gas flow and avoid uneven distribution of the reaction gas flow. Meanwhile, grouping the plurality of gas outlet round holes can improve the processing convenience and reduce the processing cost.

[0015] Preferably, the air outlet hole is centrally arranged on the side of the air inlet pipe close to the electrode rod.

[0016] By adopting the above technical scheme, the air outlet hole is arranged at the central position of the side of the air inlet pipe close to the electrode rod, which helps the reaction gas to flow more smoothly to the vicinity of the electrode rod, so that the reaction gas can be fully ionized when passing through the plasma reaction cavity.

[0017] Preferably, the air outlet unit is provided in two groups, and the two groups of air outlet units are arranged on the side of the air inlet pipe close to the electrode rod, the included angle between the two groups of air outlet units is not greater than 60°, and the distance between the two groups of air outlet units and the electrode rod is equal.

[0018] By adopting the above technical scheme, the two groups of air outlet units are arranged on the side of the air inlet pipe close to the electrode rod, which helps to better and uniformly distribute the airflow, and by controlling the airflow direction through the included angle, the time for the airflow to bypass the electrode rod can be changed, thereby improving the fullness of the ionization of the reaction gas.

[0019] Preferably, the bottom of the plasma reaction cavity is provided with a carrier gas inlet for introducing inert gas, and the carrier gas inlet is located directly below the electrode rod.

[0020] By adopting the above technical scheme, after the reaction gas enters the plasma reaction cavity from the air inlet pipe, the reaction gas directly contacts the electrode rod, and the inert gas is introduced from the bottom of the electrode rod through the carrier gas inlet. The inert gas can push the reaction gas at the bottom to move upward to balance the concentration of the reaction gas at the bottom. At the same time, the inert gas can carry away a certain amount of heat, thereby prolonging the service life of the electrode rod.

[0021] Preferably, an adjusting sleeve is rotatably installed in the air inlet pipe, a through groove is formed in the outer side surface of the adjusting sleeve, the through groove is arranged along the axial direction of the adjusting sleeve, a reset block is fixed to the outer peripheral surface of the adjusting sleeve, an arc-shaped groove is formed in the inner peripheral surface of the air inlet pipe, the reset block is slidably connected to the air inlet pipe along the circumferential direction of the reset block through the arc-shaped groove, a reset spring is fixed to the inner wall of the arc-shaped groove, and the other end of the reset spring is fixedly connected to the side surface of the reset block. A recess groove is formed in the inner top surface of the air inlet pipe, a limiting circular plate is vertically slidably installed in the recess groove of the air inlet pipe, two limiting blocks are fixed to the outer peripheral surface of the limiting circular plate, a limiting groove is formed in the inner wall of the recess groove, the limiting blocks are vertically slidably connected to the air inlet pipe through the limiting groove, a positioning groove for inserting the limiting blocks is formed in the top surface of the adjusting sleeve, and a limiting spring is fixed to the top surface of the limiting circular plate, and the top end of the limiting spring is fixedly connected to the inner top surface of the recess groove.

[0022] By adopting the technical scheme, when the gas inlet pipe is not connected with the reaction gas, the limiting disc moves downward under the elastic force of the limiting spring, and the limiting block is inserted into the positioning groove, and the through groove is not communicated with the gas outlet hole; the reaction gas is continuously connected into the gas inlet pipe, and after the reaction gas in the gas inlet pipe is filled, the limiting disc moves upward under the gas pressure of the reaction gas, the limiting block is separated from the positioning groove, the adjusting sleeve rotates under the elastic force of the reset spring, so that the through groove is communicated with the gas outlet hole, so that the reaction gas in the gas inlet pipe can uniformly enter the plasma reaction cavity through each gas outlet hole.

[0023] To sum up, the present application includes at least one of the following beneficial technical effects: 1. The electrode rod and the gas inlet pipe are surrounded by the plasma reaction cavity on three sides. After the reaction gas is connected into the gas inlet pipe from the gas inlet end, the reaction gas enters the plasma reaction cavity through the gas outlet unit, and then is ionized under the electric field formed by the electrode rod and the electrode plate. After the reaction gas is ionized into plasma, it enters the furnace tube process cavity. Due to the uniform distribution of the gas volume sprayed by the gas outlet unit, the plasma is uniformly distributed, providing a uniform gas flow environment for the subsequent film deposition process. The gas inlet pipe is located on the side of the electrode rod away from the furnace tube process cavity, so that the reaction gas must be ionized before entering the furnace tube process cavity, avoiding waste of the reaction gas and ensuring ionization efficiency. 2. The flow of the reaction gas connected from the gas inlet end is constant. Under the action of gravity, the gas volume sprayed by the gas outlet hole close to the gas inlet end is larger, and the gas volume sprayed by the gas outlet hole away from the gas inlet end is smaller. Due to the fact that the diameter of the gas outlet hole increases from the gas inlet end to the end of the gas pipe, the gas volume sprayed by each gas outlet hole is relatively uniform, thereby improving the uneven distribution of plasma caused by gravity and providing a uniform gas flow environment for the subsequent film deposition process. 3. The gas outlet hole is arranged at the center of the side of the gas inlet pipe close to the electrode rod, which helps the reaction gas to flow more smoothly near the electrode rod, so that the reaction gas can be fully ionized when passing through the plasma reaction cavity. BRIEF DESCRIPTION OF DRAWINGS

[0024] Figure 1 is the overall structure schematic diagram of embodiment 1 of the present application.

[0025] Figure 2 is the sectional view of the furnace tube body in embodiment 1 of the present application.

[0026] Figure 3 is Figure 2 is the enlarged schematic diagram of A in

[0027] Figure 4 is the structure schematic diagram of the carrier gas inlet and the electrode rod in embodiment 1 of the present application.

[0028] Figure 5 is a structural schematic diagram of the gas inlet pipe in Embodiment 1 of the present application.

[0029] Figure 6 is a structural schematic diagram of the gas outlet unit in Embodiment 1 of the present application.

[0030] Figure 7 is a structural schematic diagram of the gas outlet unit in Embodiment 2 of the present application.

[0031] Figure 8 is a structural schematic diagram of the gas outlet unit in Embodiment 3 of the present application.

[0032] Figure 9 is a structural schematic diagram of the gas outlet unit in Embodiment 4 of the present application.

[0033] Figure 10 is a structural schematic diagram of the gas inlet pipe and the adjusting sleeve in Embodiment 5 of the present application.

[0034] Figure 11 is a structural schematic diagram of the adjusting sleeve and the reset block in Embodiment 5 of the present application.

[0035] Reference signs: 1, furnace pipe body; 11, furnace pipe process cavity; 2, plasma reaction cavity; 21, electrode rod; 22, electrode plate; 23, carrier gas inlet; 3, gas inlet pipe; 31, gas inlet end; 32, gas pipe end; 4, gas outlet unit; 41, gas outlet hole; 5, gas hole unit; 51, gas outlet round hole; 6, adjusting sleeve; 61, through slot; 62, reset block; 63, arc-shaped slot; 64, reset spring; 65, accommodation slot; 66, positioning slot; 7, limiting round plate; 71, limiting block; 72, limiting slot; 73, limiting spring. DETAILED DESCRIPTION

[0036] The following will be described in detail in combination with the accompanying drawings. Figures 1-11 The present application will be further described in detail.

[0037] The present application discloses a plasma processing device and equipment thereof.

[0038] Embodiment 1 Reference will be made to Figure 1 , Figure 2 and Figure 3The plasma processing device and the equipment thereof include a furnace tube body 1, a furnace tube process cavity 11 and a plasma reaction cavity 2 are arranged in the furnace tube body 1, an electrode rod 21 and a gas inlet pipe 3 are arranged in the plasma reaction cavity 2, the electrode rod 21 and the gas inlet pipe 3 are parallel to each other, and the gas inlet pipe 3 is located on the side of the electrode rod 21 away from the furnace tube process cavity 11. Two electrode plates 22 are arranged in the furnace tube body 1, and the two electrode plates 22 are located on the two sides of the electrode rod 21 respectively. The plasma reaction cavity 2 is arranged between the electrode plate 22 and the electrode rod 21, and the material of the plasma reaction cavity 2 is quartz. The bottom end of the gas inlet pipe 3 is a gas inlet end 31 for introducing a reaction gas, and the top end of the gas inlet pipe 3 is a gas pipe end 32. The gas inlet pipe 3 is provided with a gas outlet unit 4, and the reaction gas in the gas inlet pipe 3 is sprayed out through the gas outlet unit 4 and uniformly distributed along the length direction of the electrode rod 21.

[0039] The electrode rod 21 and the gas inlet pipe 3 are surrounded by the plasma reaction cavity 2 on three sides. After the reaction gas is introduced from the gas inlet end 31 of the gas inlet pipe 3, the reaction gas enters the plasma reaction cavity 2 through the gas outlet unit 4, and then is ionized under the action of the electric field formed by the electrode rod 21 and the electrode plate 22. After the reaction gas is ionized into plasma, it enters the furnace tube process cavity 11. Since the gas inlet pipe 3 is located on the side of the electrode rod 21 away from the furnace tube process cavity 11, the reaction gas must be ionized before entering the furnace tube process cavity 11, thereby avoiding waste of the reaction gas and ensuring ionization efficiency.

[0040] Referring to Figure 4 The bottom of the plasma reaction cavity 2 is provided with a carrier gas inlet 23 for introducing an inert gas, and the carrier gas inlet 23 is located directly below the electrode rod 21. After the reaction gas enters the plasma reaction cavity 2 from the gas inlet pipe 3, the reaction gas directly contacts the electrode rod 21, and the inert gas is introduced from the bottom of the electrode rod 21 through the carrier gas inlet 23. The inert gas can push the reaction gas at the bottom to move upward to balance the concentration of the reaction gas at the bottom. At the same time, the inert gas can carry away a certain amount of heat to prolong the service life of the electrode rod 21.

[0041] Referring to Figure 5 and Figure 6 The gas outlet unit 4 includes a plurality of gas outlet holes 41, and the plurality of gas outlet holes 41 are arranged at equal intervals along the length direction of the gas inlet pipe 3. The diameters of the plurality of gas outlet holes 41 increase from the gas inlet end 31 to the gas pipe end 32, and the gas outlet holes 41 are arranged centrally on the side of the gas inlet pipe 3 close to the electrode rod 21.

[0042] The implementation principle of the embodiment 1 of the application is that the flow of the reaction gas flowing into the gas inlet end 31 is constant, under the action of gravity, the gas amount sprayed by the gas outlet holes 41 close to the gas inlet end 31 is relatively large, and the gas amount sprayed by the gas outlet holes 41 far from the gas inlet end 31 is relatively small, since the diameters of the gas outlet holes 41 increase successively from the gas inlet end 31 to the gas pipe end 32, the gas amount sprayed by each gas outlet hole 41 is relatively uniform, thereby the non-uniform distribution of the plasma caused by gravity can be improved, and a uniform gas flow environment for the subsequent film deposition process is provided.

[0043] Embodiment 2 With reference to Figure 7 The difference between the embodiment and the embodiment 1 is that the gas outlet unit 4 is provided with two groups, and the two groups of gas outlet units 4 are arranged at intervals along the circumference of the gas inlet pipe 3. The included angle of the two groups of gas outlet units 4 is 60°, and the distance between the two groups of gas outlet units 4 and the electrode rod 21 is equal.

[0044] The implementation principle of the embodiment 2 of the application is that the arrangement of the two groups of gas outlet units 4 makes the reaction gas enter the plasma reaction cavity 2 more efficiently, after the reaction gas enters the plasma reaction cavity 2 through the two groups of gas outlet units 4, the reaction gas can diffuse around the electrode rod 21, the electrode rod 21 hinders the reaction gas from directly entering the furnace pipe process cavity, so that the reaction gas must pass through the ionization zone formed by the electrode rod 21 and the electrode plate 22, and after ionization, the reaction gas can enter the furnace pipe process cavity, thereby improving the ionization efficiency.

[0045] Embodiment 3 With reference to Figure 8 The difference between the embodiment and the embodiment 1 is that the gas outlet unit 4 includes a plurality of groups of gas hole units 5, and the plurality of groups of gas hole units 5 are arranged at equal intervals along the length direction of the gas inlet pipe 3. The gas hole unit 5 includes a plurality of gas outlet circular holes 51 arranged at equal intervals along the length direction of the gas inlet pipe 3, the diameters of the gas outlet circular holes 51 of the plurality of groups of gas hole units 5 increase successively from the gas inlet end 31 to the gas pipe end 32, and the gas outlet circular holes 51 are arranged centrally on the side of the gas inlet pipe 3 close to the electrode rod 21.

[0046] The implementation principle of the embodiment 3 of the application is that the plurality of groups of gas hole units 5 with different diameters of the gas outlet circular holes 51 help to keep the consistency of the gas flow, avoid the non-uniform distribution of the reaction gas flow, and at the same time, grouping the plurality of gas outlet circular holes 51 can improve the processing convenience and reduce the processing cost.

[0047] Embodiment 4 With reference to Figure 9 The difference between the embodiment and the embodiment 3 is that the gas outlet unit 4 is provided with two groups, and the two groups of gas outlet units 4 are arranged on the side of the gas inlet pipe 3 close to the electrode rod 21. The included angle of the two groups of gas outlet units 4 is 60°, and the distance between the two groups of gas outlet units 4 and the electrode rod 21 is equal.

[0048] The implementation principle of the embodiment 4 of the application is that two groups of the gas outlet units 4 are arranged on the side of the gas inlet pipe 3 close to the electrode rod 21, which helps to change the time of the gas flow around the electrode rod 21 and improve the sufficiency of the reaction gas ionization.

[0049] Embodiment 5 With reference to Figure 10 and Figure 11 , the difference between the embodiment and the embodiment 1 is that the adjusting sleeve 6 is rotatably arranged in the gas inlet pipe 3, the outer side of the adjusting sleeve 6 is provided with the through slot 61 arranged along the axial direction of the adjusting sleeve 6, the outer circumferential surface of the adjusting sleeve 6 is fixedly provided with the reset block 62, the inner circumferential surface of the gas inlet pipe 3 is provided with the arc-shaped slot 63, the reset block 62 is slidably arranged along the circumferential direction of the reset block 62 in the arc-shaped slot 63, the inner wall of the arc-shaped slot 63 is fixedly provided with the reset spring 64, and the other end of the reset spring 64 is fixedly connected with the side surface of the reset block 62.

[0050] With reference to Figure 10 and Figure 11 , the inner top surface of the gas inlet pipe 3 is provided with the accommodation slot 65, and the gas inlet pipe 3 is vertically slidably arranged in the accommodation slot 65 and is provided with the limiting circular plate 7. The outer circumferential surface of the limiting circular plate 7 is fixedly provided with the two limiting blocks 71, the inner wall of the accommodation slot 65 is provided with the limiting slot 72, the limiting blocks 71 are vertically slidably arranged in the limiting slot 72, and the top surface of the adjusting sleeve 6 is provided with the positioning slot 66 for inserting the limiting blocks 71. The top surface of the limiting circular plate 7 is fixedly provided with the limiting spring 73, and the top end of the limiting spring 73 is fixedly connected with the inner top surface of the accommodation slot 65.

[0051] The implementation principle of the embodiment 5 of the application is that when the reaction gas is not introduced into the gas inlet pipe 3, the limiting circular plate 7 moves downward under the elastic force of the limiting spring 73, the limiting blocks 71 are inserted into the positioning slot 66, and the through slot 61 is not communicated with the gas outlet hole 41; the reaction gas is continuously introduced into the gas inlet pipe 3, the reaction gas in the gas inlet pipe 3 is filled after the reaction gas is continuously introduced into the gas inlet pipe 3, the limiting circular plate 7 moves upward under the gas pressure of the reaction gas, the limiting blocks 71 are separated from the positioning slot 66, the adjusting sleeve 6 rotates under the elastic force of the reset spring 64, the through slot 61 is communicated with the gas outlet hole 41, and the reaction gas in the gas inlet pipe 3 uniformly enters the plasma reaction cavity 2 through the gas outlet holes 41.

[0052] The above are the preferred embodiments of the application, which do not limit the protection scope of the application, so that: any equivalent changes made on the structure, shape and principle of the application should be covered within the protection scope of the application.

Claims

1. A plasma processing device and equipment, characterized in that: The furnace tube body (1) includes a furnace tube process chamber (11) and a plasma reaction chamber (2) inside the furnace tube body (1). An inlet pipe (3) and an electrode rod (21) are installed inside the plasma reaction chamber (2). The inlet pipe (3) is located on the side of the electrode rod (21) away from the furnace tube process chamber (11). Two electrode plates (22) are installed inside the furnace tube body (1). The two electrode plates (22) are located on both sides of the electrode rod (21). The bottom end of the inlet pipe (3) is an inlet end (31) for introducing reaction gas. The top end of the inlet pipe (3) is a gas pipe end (32). An outlet unit (4) is provided on the inlet pipe (3). The reaction gas in the inlet pipe (3) is ejected through several outlet units (4) and evenly distributed along the length direction of the electrode rod (21).

2. The plasma processing device and equipment according to claim 1, characterized in that: The air outlet unit (4) includes a plurality of air outlet holes (41), which are equally spaced along the length of the air inlet pipe (3), and the diameter of the plurality of air outlet holes (41) increases sequentially from the air inlet end (31) to the end of the air pipe (32).

3. The plasma processing device and equipment according to claim 2, characterized in that: The air outlet (41) is located in the center of the air inlet pipe (3) on the side near the electrode rod (21).

4. The plasma processing apparatus and equipment according to claim 2, characterized in that: The air outlet unit (4) is provided in two sets. The two sets of air outlet units (4) are arranged at intervals along the circumference of the air inlet pipe (3). The included angle between the two sets of air outlet units (4) is no greater than 60°. The distance between the two sets of air outlet units (4) and the electrode rod (21) is equal.

5. The plasma processing apparatus and equipment according to claim 1, characterized in that: The air outlet unit (4) includes several sets of air hole units (5). The several air hole units (5) are arranged at equal intervals along the length direction of the air inlet pipe (3). The air hole unit (5) includes several air outlet round holes (51) arranged at equal intervals along the length direction of the air inlet pipe (3). The diameter of the air outlet round holes (51) of the several air hole units (5) increases sequentially from the air inlet end (31) to the end of the air pipe (32).

6. The plasma processing apparatus and equipment according to claim 5, characterized in that: The air outlet hole (51) is located in the center of the air inlet pipe (3) on the side near the electrode rod (21).

7. The plasma processing apparatus and equipment according to claim 5, characterized in that: The air outlet unit (4) is provided in two sets. The two sets of air outlet units (4) are located on the side of the air inlet pipe (3) close to the electrode rod (21). The included angle between the two sets of air outlet units (4) is no greater than 60°, and the distance between the two sets of air outlet units (4) and the electrode rod (21) is equal.

8. The plasma processing apparatus and equipment according to claim 1, characterized in that: The bottom of the plasma reaction chamber (2) is provided with a carrier gas inlet (23) for introducing inert gas, and the carrier gas inlet (23) is located directly below the electrode rod (21).

9. A plasma processing apparatus and device according to claim 2, characterized in that: An adjusting sleeve (6) is rotatably installed inside the air intake pipe (3). A through groove (61) is provided on the outer side of the adjusting sleeve (6). The through groove (61) is arranged along the axial direction of the adjusting sleeve (6). A reset block (62) is fixed on the outer circumferential surface of the adjusting sleeve (6). An arc groove (63) is provided on the inner circumferential surface of the air intake pipe (3). The reset block (62) slides and engages with the air intake pipe (3) along its circumferential direction through the arc groove (63). A reset spring (64) is fixed on the inner wall of the arc groove (63). The other end of the reset spring (64) is fixedly connected to the side of the reset block (62). The inner top surface of the air intake pipe (3) is opened A clearance groove (65) is provided, and the intake pipe (3) slides vertically through the clearance groove (65) to install a limiting circular plate (7). Two limiting blocks (71) are fixed on the outer circumferential surface of the limiting circular plate (7). A limiting groove (72) is opened on the inner wall of the clearance groove (65). The limiting block (71) slides vertically with the intake pipe (3) through the limiting groove (72). A positioning groove (66) for inserting the limiting block (71) is opened on the top surface of the adjusting sleeve (6). A limiting spring (73) is fixed on the top surface of the limiting circular plate (7). The top end of the limiting spring (73) is fixedly connected to the inner top surface of the clearance groove (65).

Images