Magnetron sputtering winding coating machine

Abstract

The invention discloses a magnetron sputtering winding coating machine, and belongs to the technical field of magnetron sputtering coating. The magnetron sputtering winding coating machine comprises: a vacuum system forming a vacuum chamber; the winding system is mounted in the vacuum chamber and is used for conveying the flexible base material; the magnetron sputtering device is installed in the vacuum cavity and comprises a plurality of magnetron sputtering assemblies, each magnetron sputtering assembly comprises a target material and a magnetic pole, glow discharge areas of the multiple magnetron sputtering assemblies of the same magnetron sputtering device at least partially coincide, and the arrangement directions of the multiple magnetron sputtering assemblies of the same magnetron sputtering device are relatively inclined. The central axes of all the magnetron sputtering assemblies of the same magnetron sputtering device intersect in the overlapped area of the glow discharge area. The multiple magnetron sputtering assemblies of the same magnetron sputtering device are obliquely arranged, and the glow discharge areas of the magnetron sputtering assemblies at least partially coincide, so that the production efficiency of sputter coating can be improved, and damage of sputtering particles to a deposited film layer is reduced.

Description

TECHNICAL FIELD

[0001] The application belongs to the technical field of magnetron sputtering coating, and particularly relates to a magnetron sputtering winding coating machine. BACKGROUND

[0002] The magnetron sputtering technology combines the magnetron principle with the ordinary sputtering technology, controls the electron motion trajectory in the electric field by using the special distribution of the magnetic field, and improves the sputtering process, so that the coating thickness and uniformity are controllable. In the related technology, the magnetron sputtering coating equipment mostly adopts the plane coating technology, the coating efficiency is low, the target material is seriously wasted, and the energy of the particle deposition is high. The high-energy particles will bombard the deposited film when depositing, damage the structure of the deposited film, and there is room for improvement. SUMMARY

[0003] The application aims to at least solve one of the technical problems in the related technology. To this end, the application provides a magnetron sputtering winding coating machine, which can improve the production efficiency of sputtering coating.

[0004] In a first aspect, the application provides a magnetron sputtering winding coating machine, comprising:

[0005] A vacuum system forms a vacuum chamber;

[0006] A winding system is installed in the vacuum chamber and is used for conveying a flexible substrate;

[0007] A magnetron sputtering device is installed in the vacuum chamber and comprises a plurality of magnetron sputtering assemblies. The magnetron sputtering assembly comprises a target material and a magnetic pole. The glow discharge regions of the plurality of magnetron sputtering assemblies of the same magnetron sputtering device at least partially overlap. The arrangement directions of the plurality of magnetron sputtering assemblies of the same magnetron sputtering device are relatively inclined. The central axes of each of the magnetron sputtering assemblies of the same magnetron sputtering device intersect in the overlapping region of the glow discharge region.

[0008] In the above technical solution, by inclining the plurality of magnetron sputtering assemblies of the same magnetron sputtering device and making the glow discharge regions of the plurality of magnetron sputtering assemblies of the same magnetron sputtering device at least partially overlap, the production efficiency of sputtering coating can be improved, and the damage of the sputtering particles to the deposited film layer can be reduced.

[0009] According to one embodiment of the application, the plurality of magnetron sputtering assemblies of the same magnetron sputtering device are symmetrically distributed, and the symmetric central axis is parallel to the normal line of the film-coated surface.

[0010] In the technical scheme, the plurality of magnetron sputtering assemblies of the same magnetron sputtering device are symmetrically distributed, and the symmetric central axis is parallel to the normal line of the surface to be coated, so that a more uniform sputtering effect can be generated, thereby improving the uniformity of the film layer.

[0011] According to an embodiment of the present application, the magnetic poles of the same polarity of the plurality of magnetron sputtering assemblies of the same magnetron sputtering device are arranged adjacently.

[0012] In the technical scheme, the magnetic poles of the same polarity of the plurality of magnetron sputtering assemblies of the same magnetron sputtering device are arranged adjacently, so that the mutual influence between the adjacent magnetic poles of the adjacent magnetron sputtering assemblies can be reduced.

[0013] According to an embodiment of the present application, the magnetic poles are rotatably assembled in the vacuum chamber.

[0014] In the technical scheme, reasonable magnetic field configuration can effectively improve the sputtering rate and the uniformity of the film layer, and improve the working efficiency of the equipment and the quality of the film layer.

[0015] According to an embodiment of the present application, the magnetron sputtering device comprises a plurality of magnetron sputtering devices arranged at intervals, and the plurality of magnetron sputtering devices are adapted to be distributed on both sides of the flexible substrate.

[0016] In the technical scheme, the plurality of magnetron sputtering devices are distributed on both sides of the flexible substrate, so that different production requirements can be met.

[0017] According to an embodiment of the present application, the winding system comprises a plurality of guide rollers for conveying the flexible substrate, the plurality of guide rollers are arranged to separate a first sputtering area and a second sputtering area in the vacuum chamber when conveying the flexible substrate, the glow discharge area of the magnetron sputtering device arranged in the first sputtering area is adapted to face the first surface of the flexible substrate, and the glow discharge area of the magnetron sputtering device arranged in the second sputtering area is adapted to face the second surface of the flexible substrate.

[0018] In the technical scheme, the plurality of guide rollers are arranged to separate the first sputtering area and the second sputtering area in the vacuum chamber when conveying the flexible substrate, so that the two sides of the flexible substrate can be coated respectively, and the mutual influence between the plurality of magnetron sputtering devices can be reduced.

[0019] According to an embodiment of the present application, the plurality of guide rollers comprise a first type of guide roller, the first type of guide roller has a plurality of air outlets, and is configured to form an air layer on the surface of the first type of guide roller to suspend and support the flexible substrate when rotating.

[0020] The guide roller, which is adjacent to the magnetron sputtering device, is located downstream of a corresponding glow discharge area and supports a surface of the flexible substrate that is the same as a corresponding film-coated surface of the magnetron sputtering device, and is a first type of guide roller.

[0021] In the above technical solution, the first type of guide roller suspends the flexible substrate, which can reduce the risk of scratching the surface film layer of the flexible substrate.

[0022] According to an embodiment of the present application, the air layer formed by the surface of the first type of guide roller is plasma.

[0023] In the above technical solution, the plasma layer can suspend the flexible substrate, which can reduce the risk of scratching the surface film layer of the flexible substrate, and can also perform surface cleaning treatment on the surface film layer of the flexible substrate.

[0024] According to an embodiment of the present application, the vacuum chamber is connected to a vacuum pump through a valve.

[0025] In the above technical solution, the valve can control the air flow between the vacuum pump and the vacuum chamber, thereby effectively controlling the air pressure in the vacuum chamber.

[0026] According to an embodiment of the present application, the vacuum system further comprises a low-temperature cold trap, which is located between the vacuum chamber and the vacuum pump.

[0027] In the above technical solution, the low-temperature cold trap mainly functions as a condensation and trapping gas.

[0028] Additional aspects and advantages of the present application will be in part apparent and in part pointed out hereinafter. BRIEF DESCRIPTION OF DRAWINGS

[0029] The above and / or additional aspects and advantages of the present application will become apparent and be readily appreciated from the following description, including the appended drawings.

[0030] Figure 1 is a structural schematic diagram of a magnetron sputtering winding film coating machine provided by an embodiment of the present application;

[0031] Figure 2 is a structural schematic diagram of a magnetron sputtering device provided by an embodiment of the present application;

[0032] Figure 3 is a structural schematic diagram of a magnetron sputtering assembly of a magnetron sputtering device provided by an embodiment of the present application;

[0033] Figure 4 is a structural schematic diagram of a winding system provided by an embodiment of the present application.

[0034] Reference Signs:

[0035] Magnetron sputtering winding coating machine 1;

[0036] Magnetron sputtering device 10;

[0037] Magnetron sputtering assembly 110, target material 111, magnetic pole 112, first magnetic pole 113, second magnetic pole 114;

[0038] Glow discharge region 120;

[0039] Target material power supply 130;

[0040] Flexible substrate 20, first surface 210, second surface 220;

[0041] Winding system 30;

[0042] First guide roller 310, second guide roller 320, third guide roller 330, fourth guide roller 340, fifth guide roller 350, sixth guide roller 360;

[0043] Vacuum system 40;

[0044] Vacuum chamber 410, first sputtering zone 411, second sputtering zone 412;

[0045] Vacuum pump 420, cryogenic trap 430. DETAILED DESCRIPTION

[0046] The embodiments of the present application are described in detail below, examples of which are shown in the accompanying drawings, wherein the same or similar reference signs represent the same or similar elements or elements having the same or similar functions throughout. The embodiments described below by referring to the accompanying drawings are exemplary, only for explaining the present application, and cannot be understood as a limitation of the present application.

[0047] The present application aims to solve at least one of the technical problems existing in the related art. To this end, the present application proposes a magnetron sputtering winding coating machine, which can improve the production efficiency of sputtering coating.

[0048] The following refers to Figures 1-4 A magnetron sputtering winding coating machine 1 according to an embodiment of the present application is described.

[0049] As Figures 1-3As shown, the magnetron sputtering roll-to-roll coating machine 1 includes a vacuum system 40, a winding system 30, and a magnetron sputtering device 10. The vacuum system 40 forms a vacuum chamber 410. The winding system 30 is installed in the vacuum chamber 410 for transporting the flexible substrate 20. The magnetron sputtering device 10 is installed in the vacuum chamber 410 and includes multiple magnetron sputtering components 110. Each magnetron sputtering component 110 includes a target material 111 and a magnetic pole 112. The glow discharge regions 120 of the multiple magnetron sputtering components 110 of the same magnetron sputtering device 10 at least partially overlap. The arrangement directions of the multiple magnetron sputtering components 110 of the same magnetron sputtering device 10 are relatively inclined. The central axes of each magnetron sputtering component 110 of the same magnetron sputtering device 10 intersect in the overlapping region of the glow discharge region 120.

[0050] The vacuum system 40 is mainly used to provide a vacuum environment for the coating process. For example, the vacuum system 40 can form a vacuum chamber 410 and reduce the pressure inside the vacuum chamber 410 by evacuating air, thereby reducing the interference of gas molecules during particle deposition and improving the quality and uniformity of the coating.

[0051] The winding system 30 is mainly used to transport the flexible substrate 20 and to unwind and rewind the flexible substrate 20. During the coating process, the winding system 30 is responsible for transporting the flexible substrate 20 to the sputtering area and maintaining the stable transport of the flexible substrate 20. Under the guidance of the winding system 30, the flexible substrate 20 passes through the sputtering source, thereby uniformly coating the surface of the flexible substrate 20.

[0052] In this embodiment, both the winding system 30 and the magnetron sputtering device 10 are located inside the vacuum chamber 410. The magnetron sputtering device 10 is mainly used to generate a particle stream that can be sputtered onto the surface of the flexible substrate 20 in a vacuum environment. The particle stream is deposited on the surface of the flexible substrate 20 to form a film layer.

[0053] Furthermore, such as Figure 2 As shown, the magnetron sputtering device 10 may include multiple magnetron sputtering components 110, and the glow discharge regions 120 of the multiple magnetron sputtering components 110 of the same magnetron sputtering device 10 at least partially overlap. The magnetron sputtering component 110 includes a target 111 and a magnetic pole 112, and the multiple magnetic poles 112 are symmetrically arranged on the side of the target 111 facing the flexible substrate 20 to form a uniformly distributed magnetic field. The uniformly distributed magnetic field can produce a more uniform sputtering effect, which helps to reduce the phenomenon of local over-sputtering or uneven sputtering.

[0054] For example, the targets 111 of multiple magnetron sputtering components 110 of the same magnetron sputtering device 10 are of the same type. For instance, if multiple magnetron sputtering components 110 of the same magnetron sputtering device 10 all include metal targets 111, then the magnetron sputtering device 10 is used to deposit a metal film layer. Or, if multiple magnetron sputtering components 110 of the same magnetron sputtering device 10 all include non-metallic targets 111, then the magnetron sputtering device 10 is used to deposit a non-metallic film layer.

[0055] For example, the magnetron sputtering apparatus 10 may also include a target power supply 130, which may be an RF sputtering power supply or a pulsed DC sputtering power supply.

[0056] In actual operation, after evacuating the vacuum chamber 410 until the vacuum level reaches the predetermined requirement, inert gases such as argon are injected into the vacuum chamber 410. Then, a voltage is applied to the inert gas to ionize it and generate plasma. The plasma bombards the target material 111 under the action of the magnetic field and electric field, causing the atoms of the target material 111 to detach and sputter onto the surface of the flexible substrate 20. The sputtered particles are deposited on the surface of the flexible substrate 20, thereby forming a thin film on the surface of the flexible substrate 20.

[0057] It should be noted that multiple symmetrically arranged magnetic poles 112 can generate stronger electron cyclotron motion on the surface of the target material 111, increase the plasma density, and thus improve the sputtering rate.

[0058] In addition, the region where the inert gas is broken down under the action of an electric field to generate plasma is the glow discharge region 120. The plasma in the glow discharge region 120 bombards the target material 111 and generates a particle stream that is sputtered onto the surface of the flexible substrate 20. The particle stream is also located in the glow discharge region 120.

[0059] It is understood that the glow discharge regions 120 of multiple magnetron sputtering components 110 of the same magnetron sputtering device 10 at least partially overlap, which can increase the plasma density in the overlapping part of the glow discharge region 120, thereby increasing the generation rate of sputtered particles and thus increasing the film deposition rate.

[0060] like Figure 2 As shown, the arrangement directions of the multiple magnetron sputtering components 110 of the same magnetron sputtering device 10 are relatively inclined, and the central axes of each magnetron sputtering component 110 of the same magnetron sputtering device 10 intersect in the overlapping area of ​​the glow discharge region 120.

[0061] That is, the multiple magnetron sputtering components 110 of the same magnetron sputtering device 10 are not arranged horizontally, but inclined. And because the adjacent magnetron sputtering components 110 are inclined, the central axes of the adjacent magnetron sputtering components 110 intersect, thereby forming the overlapping area of ​​the glow discharge region 120.

[0062] After the plurality of magnetron sputtering assemblies 110 of the same magnetron sputtering device 10 are arranged in a relative inclined manner, the adjacent magnetron sputtering assemblies 110 are arranged opposite to each other on one side of the flexible substrate 20, and under the action of the magnetic field of the plurality of magnetron sputtering assemblies 110 arranged in a relative inclined manner, the distribution range of the sputtering particles reaching the flexible substrate 20 at the same time is increased.

[0063] The arrangement direction between the plurality of magnetron sputtering assemblies 110 of the same magnetron sputtering device 10 is arranged in a relative inclined manner, so that the sputtering particles generated by the target materials 111 of different magnetron sputtering assemblies 110 of the same magnetron sputtering device 10 have different distribution ranges, and the interaction of the sputtering particles is enhanced, thereby increasing the sputtering range of the magnetron sputtering device 10 and improving the production efficiency of sputtering and film deposition, for example, the production efficiency of sputtering and film deposition and the utilization rate of the target material 111 can be improved by more than one time.

[0064] Further, the plurality of magnetron sputtering assemblies 110 arranged in a relative inclined manner in the same magnetron sputtering device 10 can increase the deposition angle of the sputtering particles, wherein the deposition angle is the angle between the sputtering particles reaching the surface of the flexible substrate 20 and the normal line of the flexible substrate 20. By increasing the deposition angle of the sputtering particles, the sputtering range of the magnetron sputtering device 10 can be increased, the production efficiency of sputtering and film deposition can be improved, and at the same time, the energy of the sputtering particles reaching the surface of the flexible substrate 20 can be reduced, thereby improving the quality of the film layer.

[0065] The magnetron sputtering technology combines the principle of magnetron with ordinary sputtering technology, controls the electron motion trajectory in the electric field by using the special distribution of the magnetic field, thereby improving the sputtering process, and making the film thickness and uniformity controllable. In the related art, most of the magnetron sputtering film deposition devices adopt planar film deposition technology, which has low film deposition efficiency, resulting in serious waste of target materials, and the energy of particle deposition is high. High-energy particles will bombard the deposited film during deposition, destroy the structure of the deposited film, and there is room for improvement.

[0066] In the present application, the plurality of magnetron sputtering assemblies 110 of the same magnetron sputtering device 10 are arranged in a relative inclined manner, so that the glow discharge regions 120 of the plurality of magnetron sputtering assemblies 110 of the same magnetron sputtering device 10 at least partially overlap, which can increase the density of the plasma in the overlapping part of the glow discharge region 120, thereby improving the generation rate of the sputtering particles, and further improving the deposition rate of the film layer. At the same time, the distribution range of the sputtering particles reaching the flexible substrate 20 at the same time can be increased, thereby improving the production efficiency of sputtering and film deposition. In addition, the plurality of magnetron sputtering assemblies 110 arranged in a relative inclined manner in the same magnetron sputtering device 10 can increase the deposition angle of the sputtering particles, thereby reducing the energy of the sputtering particles reaching the surface of the flexible substrate 20, and reducing the damage of the sputtering particles to the deposited film layer.

[0067] According to the magnetron sputtering winding coating machine 1 provided by the embodiment of the present application, by arranging the plurality of magnetron sputtering assemblies 110 of the same magnetron sputtering device 10 in a tilted manner and making the glow discharge regions 120 of the plurality of magnetron sputtering assemblies 110 of the same magnetron sputtering device 10 at least partially overlap, the production efficiency of sputtering coating can be improved, and the damage of sputtering particles to the deposited film layer can be reduced.

[0068] In some embodiments, as shown in Figure 2 The plurality of magnetron sputtering assemblies 110 of the same magnetron sputtering device 10 are symmetrically distributed, and the symmetric central axis is parallel to the normal line of the film deposition surface.

[0069] In this embodiment, the plurality of magnetron sputtering assemblies 110 of the same magnetron sputtering device 10 are symmetrically distributed, and the symmetric central axis is parallel to the normal line of the film deposition surface. The plurality of magnetron sputtering assemblies 110 of the same magnetron sputtering device 10 are tilted towards the symmetric central axis, and the tilting degrees of the magnetron sputtering assemblies 110 are the same.

[0070] In addition, one end of each magnetron sputtering assembly 110 is close to the film deposition surface of the flexible substrate 20, and the other end is close to each other. From the end of the magnetron sputtering assembly 110 close to each other to the end close to the film deposition surface, the vertical distance of the magnetron sputtering assembly 110 to the symmetric central axis gradually increases.

[0071] It can be understood that the symmetric distribution of the plurality of magnetron sputtering assemblies 110 of the same magnetron sputtering device 10 and the parallel of the symmetric central axis to the normal line of the film deposition surface can produce a more uniform sputtering effect, thereby improving the uniformity of the film layer.

[0072] In some embodiments, as shown in Figure 2 and Figure 3 The same polarity magnetic poles 112 of the plurality of magnetron sputtering assemblies 110 of the same magnetron sputtering device 10 are arranged adjacent to each other.

[0073] In this embodiment, the magnetron sputtering assembly 110 includes a target material 111 and a magnetic pole 112, wherein the magnetic pole 112 is located on the side of the target material 111 facing the flexible substrate 20, and the magnetic pole 112 is divided into a first magnetic pole 113 and a second magnetic pole 114. The first magnetic pole 113 and the second magnetic pole 114 are respectively located at both ends of the target material 111, and the polarities of the first magnetic pole 113 and the second magnetic pole 114 are different.

[0074] In addition, among the plurality of magnetron sputtering assemblies 110 of the same magnetron sputtering device 10, the same polarity magnetic poles 112 of adjacent magnetron sputtering assemblies 110 are arranged adjacent to each other, such as the first magnetic poles 113 of adjacent magnetron sputtering assemblies 110 or the second magnetic poles 114 of adjacent magnetron sputtering assemblies 110.

[0075] It can be understood that the magnetic poles 112 of the same polarity in the plurality of magnetron sputtering assemblies 110 of the same magnetron sputtering device 10 are arranged adjacently, which can reduce the mutual influence between the adjacent magnetic poles 112 of the adjacent magnetron sputtering assemblies 110.

[0076] In some embodiments, the magnetic poles 112 are rotatably arranged in the vacuum chamber 410.

[0077] In this embodiment, the magnetron sputtering assembly 110 includes the target material 111 and the magnetic poles 112, wherein the magnetic poles 112 are located on the side of the target material 111 facing the flexible substrate 20, and the magnetic poles 112 are divided into the first magnetic pole 113 and the second magnetic pole 114, the first magnetic pole 113 and the second magnetic pole 114 are respectively located at the two ends of the target material 111, and the polarities of the first magnetic pole 113 and the second magnetic pole 114 are different.

[0078] The first magnetic pole 113 and the second magnetic pole 114 are rotatably arranged in the vacuum chamber 410, and the first magnetic pole 113 and the second magnetic pole 114 rotate as a whole, and the relative positions of the first magnetic pole 113 and the second magnetic pole 114 remain unchanged during rotation.

[0079] In addition, the normal line of the target material 111 of the magnetron sputtering assembly 110 is the rotation axis, and the first magnetic pole 113 and the second magnetic pole 114 rotate around the rotation axis, and the first magnetic pole 113 and the second magnetic pole 114 can change the magnetic field by rotation, thereby controlling the sputtering direction of the particle flow.

[0080] It should be noted that the first magnetic pole 113 and the second magnetic pole 114 are kept stationary after being rotated to a predetermined angle.

[0081] It can be understood that reasonable magnetic field configuration can effectively improve the sputtering rate and the uniformity of the film layer, and improve the working efficiency of the equipment and the quality of the film layer.

[0082] In some embodiments, as shown in FIG. 1, the magnetron sputtering device 10 includes a plurality of magnetron sputtering assemblies 110 arranged at intervals, and the plurality of magnetron sputtering devices 10 are suitable for being distributed on both sides of the flexible substrate 20. Figure 1

[0083] In this embodiment, the plurality of magnetron sputtering devices 10 are suitable for being distributed on both sides of the flexible substrate 20, that is, different magnetron sputtering devices 10 can respectively deposit films on different sides of the flexible substrate 20, the flexible substrate 20 can be deposited on one side or both sides, and different magnetron sputtering devices 10 can form the same type of film layer or different types of film layer.

[0084] In some embodiments, the magnetron sputtering device 10 has multiple usage modes, including but not limited to:

[0085] Example one, the magnetron sputtering device 10 is used for depositing a metal film layer on at least one side of the flexible substrate 20.​

[0086] In this embodiment, the magnetron sputtering device 10 can include metal target materials 111, i.e., the target materials 111 of the plurality of magnetron sputtering assemblies 110 of the same magnetron sputtering device 10 are all metal target materials 111, and the metal types of the target materials 111 of the plurality of magnetron sputtering assemblies 110 of the same magnetron sputtering device 10 can be different.

[0087] In actual work process, after the inert gas ions are accelerated by the electric field, they impact the metal target material 111, so that the atoms of the metal target material 111 are separated and sputtered to the surface of the flexible substrate 20, and the sputtered particles are deposited on the surface of the flexible substrate 20, thereby forming a metal thin film on the surface of the flexible substrate 20.

[0088] It should be noted that when one of the adjacent magnetron sputtering devices 10 is not working and the other is working, the working magnetron sputtering device 10 is used to plate a metal film layer on the corresponding side of the flexible substrate 20, and the side of the flexible substrate 20 corresponding to the non-working magnetron sputtering device 10 is not plated with a film, or when both adjacent magnetron sputtering devices 10 are working, both sides of the flexible substrate 20 are plated with a metal film layer.

[0089] Example II, the magnetron sputtering device 10 is used to plate a non-metal film layer on at least one side of the flexible substrate 20.

[0090] In this embodiment, the magnetron sputtering device 10 can include non-metal target materials 111, i.e., the target materials 111 of the plurality of magnetron sputtering assemblies 110 of the same magnetron sputtering device 10 are all non-metal target materials 111, and the non-metal types of the target materials 111 of the plurality of magnetron sputtering assemblies 110 of the same magnetron sputtering device 10 can be different.

[0091] In actual work process, after the inert gas ions are accelerated by the electric field, they impact the non-metal target material 111, so that the atoms of the non-metal target material 111 are separated and sputtered to the surface of the flexible substrate 20, and the sputtered particles are deposited on the surface of the flexible substrate 20, thereby forming a non-metal thin film on the surface of the flexible substrate 20.

[0092] It should be noted that when one of the adjacent magnetron sputtering devices 10 is not working and the other is working, the working magnetron sputtering device 10 is used to plate a non-metal film layer on the corresponding side of the flexible substrate 20, and the side of the flexible substrate 20 corresponding to the non-working magnetron sputtering device 10 is not plated with a film, or when both adjacent magnetron sputtering devices 10 are working, both sides of the flexible substrate 20 are plated with a non-metal film layer.

[0093] In addition, in the case where the magnetron sputtering device 10 is used to plate a non-metal film layer, the magnetron sputtering device 10 can solve the problem of discharge sparking and arc drawing, prolong the service life of the target material 111, reduce the replacement frequency of the target material 111, and improve the operation efficiency of the equipment.

[0094] Example 3: The magnetron sputtering apparatus 10 is used to deposit a metal film layer on one side of the flexible substrate 20 and a non-metal film layer on the other side of the flexible substrate 20.

[0095] In this embodiment, the magnetron sputtering device 10 may include a non-metallic target 111 or a metallic target 111, that is, one of adjacent magnetron sputtering devices 10 includes a non-metallic target 111 and the other includes a metallic target 111, and the target 111 of multiple magnetron sputtering components 110 in the same magnetron sputtering device 10 is of the same type.

[0096] In actual operation, inert gas ions are accelerated by an electric field and then collide with the target material 111, causing the atoms of the target material 111 to detach and sputter onto the surface of the flexible substrate 20. The sputtered particles are deposited on the surface of the flexible substrate 20, thereby forming a thin film on the surface of the flexible substrate 20.

[0097] It should be noted that when both adjacent magnetron sputtering devices 10 are working, a metal film layer is deposited on one side of the flexible substrate 20, and a non-metal film layer is deposited on the other side.

[0098] Understandably, multiple magnetron sputtering devices 10 are distributed on both sides of the flexible substrate 20 to meet different production needs. For example, the flexible substrate 20 can be coated with a metal film on one side and a non-metal film on the other side.

[0099] In some embodiments, such as Figure 1 and Figure 4 As shown, the winding system 30 includes multiple guide rollers (e.g., ...) for transporting the flexible substrate 20. Figure 4 The first guide roller 310, the second guide roller 320, the third guide roller 330, the fourth guide roller 340, the fifth guide roller 350 and the sixth guide roller 360 are configured to separate a first sputtering region 411 and a second sputtering region 412 within the vacuum chamber 410 when the flexible substrate 20 is being transported. The glow discharge region 120 of the magnetron sputtering device 10 provided in the first sputtering region 411 is adapted to face the first surface 210 of the flexible substrate 20, and the glow discharge region 120 of the magnetron sputtering device 10 provided in the second sputtering region 412 is adapted to face the second surface 220 of the flexible substrate 20.

[0100] In this embodiment, the plurality of guide rollers includes a first type of guide roller (e.g., Figure 4 The third guide roller 330 and the fifth guide roller 350) and the second type of guide roller (e.g. Figure 4 The first type of guide roller 310, the second type of guide roller 320, the fourth type of guide roller 340 and the sixth type of guide roller 360 are included. The first type of guide roller is a pneumatic guide roller and the second type of guide roller is an electric guide roller. An air layer can be formed on the surface of the first type of guide roller to suspend and support the flexible substrate 20. The second type of guide roller is in direct contact with the flexible substrate 20.

[0101] The plurality of guide rollers are arranged to divide the vacuum chamber 410 into a first sputtering zone 411 and a second sputtering zone 412 in the process of transporting the flexible substrate 20, and the first sputtering zone 411 and the second sputtering zone 412 are respectively provided with the magnetron sputtering device 10, and the glow discharge region 120 of the magnetron sputtering device 10 arranged in the first sputtering zone 411 faces the first surface 210 of the flexible substrate 20, and the glow discharge region 120 of the magnetron sputtering device 10 arranged in the second sputtering zone 412 faces the second surface 220 of the flexible substrate 20.

[0102] Further, as shown in Figure 2 and Figure 4 , the two ends of the vacuum chamber 410 along the length direction are defined as a first end and a second end, and the flexible substrate 20 is fed and discharged at the same end of the vacuum chamber 410, and the winding system 30 and the magnetron sputtering device 10 can be respectively fed and discharged from the same end of the equipment, or the equipment can be made into a symmetrical double-row chamber, so that the production efficiency of the equipment is improved to more than twice without increasing the length of the equipment.

[0103] Taking the example that the feeding port and the discharging port are distributed along the height direction of the vacuum chamber 410 at the first end of the vacuum chamber 410, a plurality of first type guide rollers and a plurality of second type guide rollers are distributed in the vacuum chamber 410, and the plurality of first type guide rollers and the plurality of second type guide rollers jointly constitute the moving path of the flexible substrate 20 in the vacuum chamber 410.

[0104] Exemplarily, the guide rollers arranged in sequence along the transportation direction of the flexible substrate 20 are defined as the first guide roller 310 to the sixth guide roller 360, and the flexible substrate 20 passes through these guide rollers in sequence in the process of transportation, wherein the third guide roller 330 and the fifth guide roller 350 are the first type guide rollers, the first guide roller 310, the second guide roller 320, the fourth guide roller 340 and the sixth guide roller 360 are the second type guide rollers, the first guide roller 310 and the second guide roller 320 are distributed in the height direction and at the second end of the vacuum chamber 410, and the first guide roller 310 is flush with the feeding port in the height direction of the vacuum chamber 410, and the second guide roller 320 is flush with the discharging port in the height direction of the vacuum chamber 410, the second guide roller 320, the third guide roller 330, the fourth guide roller 340, the fifth guide roller 350 and the sixth guide roller 360 are sequentially and spacedly distributed from the first end to the second end of the vacuum chamber 410, and the second guide roller 320, the third guide roller 330 and the sixth guide roller 360 are flush with the discharging port in the height direction of the vacuum chamber 410, and the fourth guide roller 340 and the fifth guide roller 350 are at the same height and located between the feeding port and the discharging port in the height direction of the vacuum chamber 410, and close to the discharging port in the height direction.

[0105] Furthermore, the first guide roller 310, the second guide roller 320, and the third guide roller 330 are located in the first sputtering area 411. The glow discharge region 120 of the magnetron sputtering device 10 provided in the first sputtering area 411 faces the first surface 210 of the flexible substrate 20. The first guide roller 310, the second guide roller 320, the third guide roller 330, and the sixth guide roller 360 all face the first surface 210 of the flexible substrate 20 and rotate in a counterclockwise direction. The fourth guide roller 340 and the fifth guide roller 350 are located in the second sputtering area 412. The glow discharge region 120 of the magnetron sputtering device 10 provided in the second sputtering area 412 faces the second surface 220 of the flexible substrate 20. The fourth guide roller 340 and the fifth guide roller 350 both face the second surface 220 of the flexible substrate 20 and rotate in a clockwise direction.

[0106] It should be noted that the magnetron sputtering device 10 in the first sputtering region 411 is located between the second guide roller 320 and the third guide roller 330 in the length direction of the vacuum chamber 410, and the magnetron sputtering device 10 in the second sputtering region 412 is located between the fourth guide roller 340 and the fifth guide roller 350 in the length direction of the vacuum chamber 410. The third guide roller 330 and the fifth guide roller 350 are first-type guide rollers, respectively located downstream of the corresponding glow discharge region 120. After the flexible substrate 20 passes through the glow discharge region 120 of the magnetron sputtering device 10, the coated flexible substrate 20 first passes through the first-type guide roller, and an air layer is formed on the surface of the first-type guide roller. The surface film of the flexible substrate 20 does not contact the surface of the first-type guide roller, which can reduce the risk of damage to the surface film of the flexible substrate 20.

[0107] In some embodiments, such as Figure 4 As shown, the plurality of guide rollers include a first type of guide roller, which has a plurality of air outlet holes and is configured to form an air layer on the surface of the first type of guide roller during rotation to suspend and support the flexible substrate 20; the guide roller adjacent to the magnetron sputtering device 10, located downstream of the corresponding glow discharge region 120, and whose support surface is the same as the coating surface corresponding to the magnetron sputtering device 10 as the flexible substrate 20 is the first type of guide roller.

[0108] In this embodiment, the plurality of guide rollers includes a first type of guide roller, which is configured adjacent to the magnetron sputtering device 10 and is arranged in a one-to-one correspondence with the magnetron sputtering device 10. At the same time, the support surface of the first type of guide roller and the coating surface of the corresponding magnetron sputtering device 10 are the same surface of the flexible substrate 20.

[0109] Furthermore, the first type of guide roller is located downstream of the corresponding glow discharge region 120, that is, the first type of guide roller is located downstream of the glow discharge region 120 of the corresponding magnetron sputtering device 10 along the transport direction of the flexible substrate 20. During the coating process, the first type of guide roller rotates, driving the flexible substrate 20 to be transported. After the flexible substrate 20 is coated in the glow discharge region 120, the coated area on the flexible substrate 20 moves to the first type of guide roller located downstream of the glow discharge region 120. The surface of the first type of guide roller has multiple uniformly distributed air vents, which can form an air layer on the surface. The air layer is located between the flexible substrate 20 and the first type of guide roller, making the flexible substrate 20 suspend, thereby reducing the risk of scratches on the film layer of the flexible substrate 20.

[0110] Furthermore, the first type of guide roller is fixedly installed in the vacuum chamber 410, and the air layer formed on the surface of the first type of guide roller is plasma. For example, electrodes can be provided in the first type of guide roller to form an electric field that ionizes the air, thereby forming a plasma layer on the surface of the first type of guide roller. The plasma layer can suspend and support the flexible substrate 20, reduce the risk of scratches on the surface film of the flexible substrate 20, and can also perform surface cleaning treatment on the surface film of the flexible substrate 20.

[0111] In some embodiments, such as Figure 1 As shown, the vacuum system 40 also includes a vacuum pump 420 and a cryogenic cold trap 430. Both the vacuum pump 420 and the cryogenic cold trap 430 are located outside the vacuum chamber 410. The vacuum chamber 410 is connected to the vacuum pump 420 through a valve, and the cryogenic cold trap 430 is located between the vacuum container and the vacuum pump 420.

[0112] In this embodiment, the vacuum pump 420 is mainly used to extract the gas in the vacuum chamber 410 to reduce the pressure inside the chamber. The vacuum pump 420 is usually located outside the vacuum chamber 410 and is connected to the vacuum chamber 410 through a valve. The valve is used to control the airflow between the vacuum pump 420 and the vacuum chamber 410. During operation, the valve can adjust the airflow and effectively control the gas pressure inside the vacuum chamber 410.

[0113] For example, vacuum pump 420 can be a molecular pump, etc.

[0114] The cryogenic cold trap 430 is usually located between the vacuum container and the vacuum pump 420. It can condense and capture gas molecules with a condensation point temperature higher than the cold trap temperature through the cryogenic surface, thereby playing the role of gas separation. For example, the cryogenic cold trap 430 can condense water vapor and other condensable gases in the gas, thereby removing impurities and moisture in the vacuum chamber 410.

[0115] In some embodiments, the winding system 30 may further include an adjustment device and a plurality of motors, and the plurality of electrodes respectively perform winding and unwinding of the flexible substrate 20.

[0116] In this embodiment, the adjusting device is mainly used to adjust the torsion and tension. By measuring the tension of the flexible substrate 20 during the transmission process, the adjusting device controls the rotating speed of the motor, so that the speed and tension of the flexible substrate 20 during the transmission process remain unchanged, which helps to keep the surface of the flexible substrate 20 flat during winding and reduce the surface scratches of the flexible substrate 20 caused by uneven tension.

[0117] In addition, the winding system 30 can also include an electrically conductive device for reducing the risk of excessive accumulation of surface charges of the flexible substrate 20.

[0118] The terms "first", "second", etc. in the description and claims of the present application are used to distinguish similar objects, and are not used to describe a specific order or sequence. It should be understood that the data used in this way can be interchanged under appropriate circumstances, so that the embodiments of the present application can be implemented in an order other than those illustrated or described herein, and the objects distinguished by "first", "second", etc. are generally of a kind and do not limit the number of objects, for example, the first object can be one or more. In addition, "and / or" in the description and claims means at least one of the connected objects, and the character " / " generally indicates that the objects before and after are in an "or" relationship.

[0119] In the description of the present application, it should be understood that the terms "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential" and the like indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings, and are only used to facilitate the description of the present application and simplify the description, and do not indicate or imply that the devices or elements referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as limiting the present application.

[0120] In the description of the present application, "first feature" and "second feature" can include one or more features.

[0121] In the description of the present application, "a plurality of" means two or more.

[0122] In the description of the present application, "above" or "below" the first feature and the second feature can include direct contact between the first and second features, or indirect contact between the first and second features through another feature therebetween.

[0123] In the description of the application, above, over and on are used to indicate that the first feature is above, over or on the second feature, either directly or obliquely, or simply that the first feature is higher than the second feature.

[0124] In the description of the application, references to "one embodiment", "some embodiments", "an illustrative embodiment", "an example", "a specific example", or "some examples" means that a particular feature, structure, material, or characteristic being described is included in at least one embodiment or example of the application. The appearances of the phrases "in one embodiment", "in some embodiments", "in an illustrative embodiment", "an example", "a specific example", or "some examples" in various places in the specification are not necessarily all referring to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics can be combined in any suitable manner in one or more embodiments or examples.

[0125] Although embodiments of the application have been illustrated and described, it will be clear to those of ordinary skill in the art that various changes, modifications, substitutions, and alterations can be made therein without departing from the principles and the spirit of the application. The scope of the application is limited only by the claims and the equivalents thereof.

Claims

1. A magnetron sputtering winding coating machine, characterized in that, The application relates to a vacuum system for coating a flexible substrate, comprising: a vacuum chamber; a winding system installed in the vacuum chamber for conveying the flexible substrate; a magnetron sputtering device installed in the vacuum chamber, comprising a plurality of magnetron sputtering assemblies, each of which comprises a target and a magnetic pole, and the glow discharge regions of the plurality of magnetron sputtering assemblies of the same magnetron sputtering device at least partially overlap, the arrangement directions of the plurality of magnetron sputtering assemblies of the same magnetron sputtering device are relatively inclined, and the central axes of the magnetron sputtering assemblies of the same magnetron sputtering device intersect in the overlapping region of the glow discharge regions.

2. The magnetron sputter web coater of claim 1, wherein The plurality of magnetron sputtering assemblies of the same magnetron sputtering device are symmetrically distributed, and the symmetric central axes are parallel to the normal line of the surface to be coated.

3. The magnetron sputter web coater of claim 1, wherein The magnetic poles of the same polarity of the plurality of magnetron sputtering assemblies of the same magnetron sputtering device are arranged adjacently.

4. The magnetron sputter web coater of claim 1, wherein The magnetic poles are rotatably assembled in the vacuum chamber.

5. The magnetron sputter web coater according to any of claims 1 to 4, characterized in that The magnetron sputtering device comprises a plurality of magnetron sputtering devices which are arranged at intervals, and the plurality of magnetron sputtering devices are suitable for being distributed on both sides of the flexible substrate.

6. The magnetron sputter web coater of claim 5, wherein The winding system comprises a plurality of guide rollers for conveying the flexible substrate, and the plurality of guide rollers are arranged to separate a first sputtering area and a second sputtering area in the vacuum chamber during the conveying of the flexible substrate, the glow discharge region of the magnetron sputtering device arranged in the first sputtering area is suitable for being directed to the first surface of the flexible substrate, and the glow discharge region of the magnetron sputtering device arranged in the second sputtering area is suitable for being directed to the second surface of the flexible substrate.

7. The magnetron sputter web coater according to claim 6, characterized in that The plurality of guide rollers comprise first guide rollers, the first guide rollers have a plurality of air outlets, and are configured to form an air layer on the surface of the first guide rollers to support the flexible substrate in suspension during rotation; The guide rollers adjacent to the magnetron sputtering device and located downstream of the corresponding glow discharge region and supporting the same surface of the flexible substrate as the corresponding coating surface of the magnetron sputtering device are the first guide rollers.

8. The magnetron sputter web coater according to claim 7, characterized in that The air layer formed on the surface of the first guide rollers is a plasma.

9. The magnetron sputter web coater of claim 6, wherein The vacuum chamber is connected to a vacuum pump through a valve.

10. The magnetron sputter web coater of claim 9, wherein The vacuum system further comprises a low-temperature cold trap between the vacuum chamber and the vacuum pump.

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