A semiconductor laser

Abstract

The application provides a semiconductor laser, which comprises, from bottom to top, a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer and an upper limiting layer, a nanoscale pre-strain regulating layer is arranged between the lower waveguide layer and the active layer of the semiconductor laser, and a plurality of atomic scale strain regulating layers are arranged in the active layer, so that the mismatch stress between the quantum well layer and the barrier layer of the active layer and the mismatch stress between the quantum well and the upper waveguide layer and the mismatch stress between the quantum well and the lower waveguide layer can be regulated, the laser emission width of the slow axis direction of the active layer of the laser is increased, the slow axis divergence angle of the laser is increased, and the slow axis angle is improved; meanwhile, the fast axis substrate mode leakage generated by the strain polarization of the active layer can be inhibited.

Description

TECHNICAL FIELD

[0001] The present application relates to the field of semiconductor optoelectronic devices, and in particular to a semiconductor laser. BACKGROUND

[0002] Laser is widely used in laser display, laser television, laser projector, communication, medical treatment, weapon, guidance, ranging, spectrum analysis, cutting, precision welding, high-density optical storage and other fields. There are many types of lasers, and the classification methods are also various. The main types of lasers include solid, gas, liquid, semiconductor and dye lasers. Compared with other types of lasers, all-solid-state semiconductor lasers have the advantages of small size, high efficiency, light weight, good stability, long service life, simple and compact structure, and miniaturization.

[0003] There are great differences between laser and nitride semiconductor light-emitting diode:

[0004] 1) Laser is generated by stimulated emission of carriers, with small spectral half-width and high brightness. The output power of a single laser can reach W level, while the output power of a single nitride semiconductor light-emitting diode is in mW level.

[0005] 2) The current density of laser is up to KA / cm 2 , which is more than 2 orders of magnitude higher than that of nitride light-emitting diode, resulting in stronger electron leakage, more serious Auger recombination, stronger polarization effect, more serious electron-hole mismatch, and more serious efficiency decay Droop effect;

[0006] 3) Light-emitting diode is spontaneously transitioned and radiated without external action, from high energy level to low energy level, producing incoherent light. Laser is stimulated transition and radiation, and the energy of induced photon should be equal to the difference between the energy levels of electron transition, producing homochromatic coherent light.

[0007] 4) Different principles: Light-emitting diode is under the action of external voltage, and electron-hole transition occurs in the active layer or p-n junction to produce radiation recombination and light emission. Laser needs to meet the lasing conditions to lase, and must meet the carrier inversion distribution in the active region. The stimulated radiation light oscillates back and forth in the resonant cavity, propagates in the gain medium to amplify the light, and finally outputs laser when the gain is greater than the loss and the threshold condition is met.

[0008] The nitride semiconductor laser has the following problems: the slow-axis divergence angle of the GaN green laser is small, which makes the small power single-mode green laser applied to the 360-degree level gauge have a low ratio of bright line to dark line, and affects the display effect of the dark line; meanwhile, the longer the green wavelength is, the stronger the human eye feels, and in order to obtain an ultralong-wave green laser, a traditional method is to reduce the growth temperature of the well layer of the active layer and increase the thickness of the well layer to increase the In component of the quantum well layer of the active layer, but reducing the temperature will cause the crystal quality of the well layer of the laser to decrease, the defect density to increase, and the quenching probability of the laser to increase, meanwhile, the In component of the quantum well layer increases, the lattice mismatch and strain of the well layer and the barrier layer increase, the lattice strain increases, which further reduces the crystal quality of the active layer and the slow-axis divergence angle, thereby further reducing the dark line display effect of the green laser in the 360-degree level gauge.

[0009] GaN is usually grown by MOCVD (metal organic chemical vapor deposition) or MBE (molecular beam epitaxy), and if the ratio of Ga source (such as TMGa) to N source (such as NH3) is unbalanced (Ga-rich condition) during the process, the N atom supply is insufficient, which easily leads to N atom lattice point vacancies in the lattice, forming N vacancy defects. As a non-radiative recombination center, N vacancy defects capture conduction band electrons and valence band holes and recombine, releasing energy (in the form of heat or photons), and high concentration of N vacancies will cause laser quenching. In the process of growing an ultralong-wave green laser, the ratio of NH3 to VIII needs to be adjusted to improve the In atom incorporation efficiency and In component, which may introduce N vacancy defects. N interstitial defects (Nitrogen Interstitial, denoted as Ni) refer to intrinsic defects formed by N atoms deviating from normal lattice points and occupying interstitial positions in the lattice. In a N-rich growth environment: during GaN growth (such as MOCVD, MBE), if the partial pressure of the N source (such as NH3) is too high, the Ga / N ratio is unbalanced (excess N source), and the excess N atoms cannot occupy normal N lattice points, they are easily squeezed into interstitial positions in the lattice to form N interstitial defects. At low temperatures, the diffusion ability of lattice atoms is weak, and the excess N atoms are difficult to migrate to normal lattice points and are easily "frozen" in interstitial positions; rapid cooling also inhibits the migration of N atoms and promotes the retention of N interstitial defects. In order to grow an ultralong-wave green laser, the NH3 source and the growth temperature need to be adjusted, especially the growth temperature needs to be reduced to improve the In atom incorporation efficiency and the In component, thereby obtaining an ultralong-wave green wavelength, which inevitably increases the probability of generating N interstitial defects, thereby causing problems such as laser quenching. SUMMARY

[0010] To solve one of the above technical problems, the application provides a semiconductor laser.

[0011] The embodiment of the present application provides a semiconductor laser, which comprises, from bottom to top, a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer and an upper limiting layer, a nanoscale pre-strain control layer is arranged between the lower waveguide layer and the active layer, the active layer comprises a first quantum well and a second quantum well, the first quantum well is located above the second quantum well, the first quantum well comprises, from top to bottom, a first barrier layer, a first atomic scale strain control layer, a first well layer and a second atomic scale strain control layer, the second quantum well comprises, from top to bottom, a second barrier layer, a third atomic scale strain control layer, a second well layer, a fourth atomic scale strain control layer and a third barrier layer, the thickness and strain control precision of the nanoscale pre-strain control layer are nanoscale, and the thickness and strain control precision of the first atomic scale strain control layer, the second atomic scale strain control layer, the third atomic scale strain control layer and the fourth atomic scale strain control layer are atomic scale.

[0012] The present application has the following beneficial effects: the nanoscale pre-strain control layer arranged between the lower waveguide layer and the active layer and the plurality of atomic scale strain control layers arranged in the active layer can control the mismatch stress between the well layer and the barrier layer of the active layer, the mismatch stress between the quantum well and the upper waveguide layer and the mismatch stress between the quantum well and the lower waveguide layer of the active layer, increase the laser emission width of the slow axis direction of the active layer of the laser, increase the slow axis divergence angle of the laser, and improve the slow axis angle; meanwhile, the fast axis substrate mode leakage generated by the strain polarization of the active layer can be inhibited. BRIEF DESCRIPTION OF DRAWINGS

[0013] The drawings described herein are used to provide further understanding of the present application, constitute a part of the present application, the schematic embodiments of the present application and the description thereof are used to explain the present application, and do not constitute improper limitation on the present application. In the drawings:

[0014] Figure 1 The structure schematic diagram of the semiconductor laser described in the embodiment of the present application;

[0015] Figure 2 The SIMS secondary ion mass spectrum of the semiconductor laser described in the embodiment of the present application;

[0016] Figure 3 The emission spectrum comparison diagram of the semiconductor laser described in the embodiment of the present application when the semiconductor laser is a semiconductor green laser and a super-long wave green laser respectively;

[0017] Figure 4 The indium element relative intensity curve diagram of the active layer region of the semiconductor green laser described in the embodiment of the present application obtained by EDX test;

[0018] Figure 5A partial amplification SIMS secondary ion mass spectrum of the semiconductor green laser is shown, and the x-axis and y-axis coordinate positions are marked;

[0019] Figure 6 An In element relative intensity graph and a linear fitting graph of EDX testing of the first atomic-level strain regulation layer, the second atomic-level strain regulation layer, the third atomic-level strain regulation layer and the fourth atomic-level strain regulation layer of the semiconductor green laser are shown;

[0020] Figure 7 A slow-axis divergence angle comparison graph of the semiconductor green laser and a traditional green laser is shown;

[0021] Figure 8 A fast-axis divergence angle and substrate mode leakage comparison graph of the semiconductor green laser and a traditional green laser is shown, and the area shown by the box in the graph is the substrate mode leakage area;

[0022] Figure 9 A TEM test graph of the active layer region of the semiconductor green laser is shown;

[0023] Figure 10 A 360-degree horizontal light-dark line power ratio comparison graph of the semiconductor green laser and a traditional green laser is shown;

[0024] Figure 11 An In / (In+Ga) element ratio graph and a linear fitting graph of EDX testing of the first atomic-level strain regulation layer, the second atomic-level strain regulation layer, the third atomic-level strain regulation layer and the fourth atomic-level strain regulation layer of the semiconductor green laser are shown;

[0025] Figure 12 An N / (N+In+Ga) element ratio graph and a linear fitting graph of EDX testing of the first atomic-level strain regulation layer, the second atomic-level strain regulation layer, the third atomic-level strain regulation layer and the fourth atomic-level strain regulation layer of the semiconductor green laser are shown;

[0026] Figure 13 An In element relative intensity curve graph of EDX testing of the active layer region of the super-long-wave green laser is shown;

[0027] Figure 14 An In element relative intensity graph and a linear fitting graph of EDX testing of the first atomic-level strain regulation layer, the second atomic-level strain regulation layer, the third atomic-level strain regulation layer and the fourth atomic-level strain regulation layer of the super-long-wave green laser are shown;

[0028] Figure 15 TEM test diagram of the active layer region of the super-long-wave green laser of the embodiment of the present application;

[0029] Figure 16 EDX test In / (In+Ga) element ratio diagram and linear fitting diagram of the first atomic-level strain regulating layer, the second atomic-level strain regulating layer, the third atomic-level strain regulating layer and the fourth atomic-level strain regulating layer of the super-long-wave green laser of the embodiment of the present application;

[0030] Figure 17 EDX test N / (N+In+Ga) element ratio diagram and linear fitting diagram of the first atomic-level strain regulating layer, the second atomic-level strain regulating layer, the third atomic-level strain regulating layer and the fourth atomic-level strain regulating layer of the super-long-wave green laser of the embodiment of the present application.

[0031] Reference signs:

[0032] 100, substrate, 101, lower confinement layer, 102, lower waveguide layer, 103, nanoscale pre-strain regulating layer, 104, active layer, 105, upper waveguide layer, 106, upper confinement layer;

[0033] 1041, first quantum well, 1042, second quantum well;

[0034] 104a, first barrier layer, 104b, first atomic-level strain regulating layer, 104c, first well layer, 104d, second atomic-level strain regulating layer, 104e, second barrier layer, 104f, third atomic-level strain regulating layer, 104g, second well layer, 104h, fourth atomic-level strain regulating layer, 104j, third barrier layer. DETAILED DESCRIPTION

[0035] In order to make the technical solutions and advantages of the embodiments of the present application clearer, the exemplary embodiments of the present application are further described in detail below with reference to the accompanying drawings. Obviously, the described embodiments are only some of the embodiments of the present application, not all the embodiments. It should be noted that the embodiments in the present application and the features in the embodiments can be combined with each other without conflict.

[0036] Embodiment 1

[0037] As shown in Figure 1 The present embodiment proposes a semiconductor laser, which comprises, from bottom to top, a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 104, an upper waveguide layer 105 and an upper confinement layer 106. The semiconductor laser further comprises a nanoscale pre-strain regulating layer 103 and an atomic-level strain regulating layer.

[0038] Specifically, in the embodiment, the semiconductor laser is sequentially provided with a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 104, an upper waveguide layer 105, and an upper confinement layer 106 from bottom to top. A nanoscale pre-strain regulation layer 103 is arranged between the lower waveguide layer 102 and the active layer 104. The thickness and strain regulation precision of the nanoscale pre-strain regulation layer 103 are in nanometer scale, and the thickness of the nanoscale pre-strain regulation layer 103 is 5 nm to 20 nm.

[0039] In the embodiment, the active layer 104 includes two quantum wells, i.e., a first quantum well 1041 and a second quantum well 1042. The first quantum well 1041 is located above the second quantum well 1042. Both the first quantum well 1041 and the second quantum well 1042 are periodic structures composed of barrier layers and well layers. An atomic-scale strain regulation layer is arranged between the barrier layers and the well layers. Specifically, the first quantum well 1041 includes a first barrier layer 104a, a first atomic-scale strain regulation layer 104b, a first well layer 104c, and a second atomic-scale strain regulation layer 104d, which are sequentially arranged from top to bottom. The second quantum well 1042 includes a second barrier layer 104e, a third atomic-scale strain regulation layer 104f, a second well layer 104g, a fourth atomic-scale strain regulation layer 104h, and a third barrier layer 104j, which are sequentially arranged from top to bottom. The thickness and strain regulation precision of the first atomic-scale strain regulation layer 104b, the second atomic-scale strain regulation layer 104d, the third atomic-scale strain regulation layer 104f, and the fourth atomic-scale strain regulation layer 104h are all in atomic scale, and the thickness is 2 angstroms to 50 angstroms.

[0040] In some optional embodiments, as shown in Figure 2 The materials of the first atomic-scale strain regulation layer 104b, the second atomic-scale strain regulation layer 104d, the third atomic-scale strain regulation layer 104f, and the fourth atomic-scale strain regulation layer 104h are InGaN materials, and the In component ranges from 0.05 to 0.80.

[0041] The substrate 100 is a GaN single crystal substrate.

[0042] The lower confinement layer 101 is any one of AlmGa1-mN / InGaN / AlnGa1-nN / GaN or AlmGa1-mN / AlnGa1-nN / GaN or GaN / AlnGa1-nN / GaN, and the Al component is 0≤m≤n≤0.5.

[0043] The lower waveguide layer 102 is any one of InGaN or GaN / InGaN or GaN / InGaN / GaN or InGaN / GaN or GaN.

[0044] The nanoscale pre-strain regulation layer 103 is any one of GaN or InGaN or InGaN / GaN.

[0045] The active layer 104 is InGaN / GaN quantum well.

[0046] The upper waveguide layer 105 is any one of InGaN or GaN / InGaN or GaN / InGaN / GaN or InGaN / GaN or GaN.

[0047] The upper confinement layer 106 is any one of AlGaN or AlGaN / GaN or AlN / AlGaN / GaN or AlN / AlInGaN / AlGaN / GaN or AlInGaN / AlGaN / GaN.

[0048] Embodiment 2

[0049] On the basis of Embodiment 1, the semiconductor laser in this embodiment can be a semiconductor green laser. The wavelength range of the semiconductor green laser is 510 nm to 525 nm, as shown in FIG. 2. When the semiconductor laser is a semiconductor green laser, the indium element of the first atomic-level strain regulation layer 104b, the second atomic-level strain regulation layer 104d, the third atomic-level strain regulation layer 104f, and the fourth atomic-level strain regulation layer 104h has certain variation characteristics. Figure 3 Specifically, as shown in FIG. 3, when the semiconductor laser is a semiconductor green laser, the rising angle of the indium element of the first atomic-level strain regulation layer 104b is a, the falling angle of the indium element of the second atomic-level strain regulation layer 104d is β, the rising angle of the indium element of the third atomic-level strain regulation layer 104f is γ, and the falling angle of the indium element of the fourth atomic-level strain regulation layer 104h is θ, where 30°≤ θ≤ a≤ β≤ γ≤ 85°.

[0050] Figure 4 Specifically, as shown in FIG. 3, when the semiconductor laser is a semiconductor green laser, the rising angle of the indium element of the first atomic-level strain regulation layer 104b is a, the falling angle of the indium element of the second atomic-level strain regulation layer 104d is β, the rising angle of the indium element of the third atomic-level strain regulation layer 104f is γ, and the falling angle of the indium element of the fourth atomic-level strain regulation layer 104h is θ, where 30°≤ θ≤ a≤ β≤ γ≤ 85°.

[0051] In this embodiment, the variation angle of the curve is defined as the tangent angle of the starting position of the layer along the curve, and the relative intensity of the indium element is tested by EDX in the SEM device. EDX is Energy Dispersive X-ray Spectroscopy.

[0052] In some optional embodiments, when the semiconductor laser is a semiconductor green laser, the linear fitting curve of the relative intensity of the indium element of the first atomic-level strain regulation layer 104b is y1=G1x1-H1, the slope is G1, and the intercept is H1, where 0.2≤ G1≤ 0.5.

[0053] The linear fitting curve of the relative intensity of the indium element of the second atomic-level strain regulation layer 104d is y2=-G2x2+H2, the slope is G2, and the intercept is H2, where 0.4≤ G2≤ 0.7.​

[0054] The linear fitting curve of the relative intensity of indium elements of the third atomic-level strain regulation layer 104f is y3=G3x3-H3, the slope is G3, and the intercept is H3, where 0.4≤G3≤0.7;

[0055] The linear fitting curve of the relative intensity of indium elements of the fourth atomic-level strain regulation layer 104h is y4=-G4x4+H4, the slope is G4, and the intercept is H4, where 0.2≤G4≤0.5;

[0056] Wherein, 0.2≤G4≤G1≤G3≤G2≤0.7; y1, y2, y3, y4 are the relative intensity of indium elements of the first atomic-level strain regulation layer 104b, the second atomic-level strain regulation layer 104d, the third atomic-level strain regulation layer 104f and the fourth atomic-level strain regulation layer 104h of the semiconductor green laser, respectively; x1, x2, x3, x4 are the thicknesses of the first atomic-level strain regulation layer 104b, the second atomic-level strain regulation layer 104d, the third atomic-level strain regulation layer 104f and the fourth atomic-level strain regulation layer 104h of the semiconductor green laser, respectively; the origin of the coordinate axis is the boundary between the active layer 104 and the upper waveguide layer 105, and the terminal of the coordinate axis is the boundary between the active layer 104 and the nanoscale pre-strain regulation layer 103, as shown in Figure 5 .

[0057] For a semiconductor green laser with a laser wavelength of 515 nm, as shown in Figure 6 , the linear fitting curve of the relative intensity of indium elements of the first atomic-level strain regulation layer 104b is y1=0.3857x1-1.133, the slope G1=0.3857, as shown in Figure 6 (a) of FIG. 1; the linear fitting curve of the relative intensity of indium elements of the second atomic-level strain regulation layer 104d is y2=-0.5326x2+5.8938, the slope G2=0.5326, as shown in Figure 6 (b) of FIG. 1; the linear fitting curve of the relative intensity of indium elements of the third atomic-level strain regulation layer 104f is y3=0.5307x3-6.0613, the slope G3=0.5307, as shown in Figure 6 (c) of FIG. 1; the linear fitting curve of the relative intensity of indium elements of the fourth atomic-level strain regulation layer 104h is y4=-0.3835x4+7.145, the slope G4=0.3835, as shown in Figure 6As shown in FIG. d, 0.2≤G4=0.3835≤G1=0.3857≤G3=0.5307≤G2=0.5326≤0.7. By precisely controlling the first atomic-level strain regulation layer 104b, the second atomic-level strain regulation layer 104d, the third atomic-level strain regulation layer 104f, and the fourth atomic-level strain regulation layer 104h, the mismatch stress between the quantum well layer and the barrier layer of the active layer 104 and the mismatch stress between the quantum well and the upper waveguide layer 105 and the lower waveguide layer 102 are regulated, the laser emission width in the slow axis direction of the laser active layer 104 is increased, the slow axis divergence angle of the laser is increased from 5.5° to 7.9°, the slow axis angle is increased by 43.6%, as shown in FIG. a; at the same time, the precise regulation of the atomic-level strain can inhibit the fast axis substrate 100 mode leakage generated by the strain polarization of the active layer 104, compared with the traditional green laser, the fast axis substrate 100 mode leakage of the semiconductor green laser with atomic-level strain regulation layer of the embodiment is reduced from 0.69 to 0.38, the substrate 100 mode leakage is reduced by about 45%, as shown in FIG. b. Figure 7 Figure 8

[0058] In some optional embodiments, when the semiconductor laser is a semiconductor green laser, the fitting curve of the indium intensity relative intensity curve of the first quantum well 1041 of the active layer 104 satisfies the following function relationship: y5=B5+A5×sin 2 (π(x5-C5) / 2×W5), wherein 0.2≤B5≤0.5, 1.0≤A5≤3.0, 2≤C5≤6, 5≤W5≤9.

[0059] The fitting curve of the indium intensity relative intensity curve of the second quantum well 1042 of the active layer 104 satisfies the following function relationship: y6=B6+A6×sin 2 (π(x6-C6) / 2×W6), wherein 0.2≤B6≤0.5, 1.0≤A6≤3.0, 3≤C6≤7, 5≤W6≤9.

[0060] Wherein, A is the amplitude parameter, W is the width parameter, C is the center position parameter, B is the baseline offset, y5 and y6 are the relative intensity of the indium element of the first quantum well 1041 and the second quantum well 1042 of the semiconductor green laser respectively, x5 and x6 are the thickness of the first quantum well 1041 and the second quantum well 1042 of the semiconductor green laser respectively, the origin of the coordinate axis is the boundary between the active layer 104 and the upper waveguide layer 105, and the end of the coordinate axis is the boundary between the active layer 104 and the nanoscale pre-strain regulation layer 103.

[0061] ​​For the semiconductor green laser with a laser wavelength of 515 nm, by precisely regulating the strain of the quantum well layer and the barrier layer of the active layer 104 and the change trend of the indium element of the atomic-level strain regulating layer, the fitting curve of the relative intensity curve of the indium element of the first quantum well 1041 of the active layer 104 of the semiconductor green laser with a laser wavelength of 515 nm of the embodiment satisfies the following function relationship: y5=0.3+1.8×sin 2 (π(x5-4) / 2×7), and the fitting curve of the relative intensity curve of the indium intensity of the second quantum well 1042 of the active layer 104 satisfies the following function relationship: y6=0.3+1.3×sin 2 (π(x6-5) / 2×6.5), as shown in Figure 4 and Figure 9 By more precise atomic-level control of the relative intensity curve of the indium element, the mismatch stress release of the active layer 104 satisfies the design requirements, and the slow-axis divergence angle and the fast-axis divergence angle and the substrate 100 mode leakage are more precisely regulated, so that the semiconductor green laser of the embodiment increases the laser lasing width in the slow-axis direction of the laser active layer 104, and the slow-axis divergence angle of the laser is increased from 5.5° to 7.9°, the slow-axis angle is increased by 43.6%, as shown in Figure 7 Meanwhile, by precisely regulating the atomic-level strain, the fast-axis substrate 100 mode leakage generated by the strain polarization of the active layer 104 can be suppressed. Compared with the traditional green laser, the fast-axis substrate 100 mode leakage of the semiconductor green laser with an atomic-level strain regulating layer of the embodiment is reduced from 0.69 to 0.38, which reduces the substrate 100 mode leakage by about 45%, as shown in Figure 8 Thus, the bright-dark line power ratio of the semiconductor green laser of the embodiment applied to the 360-degree level meter is reduced from 4.80 to 2.89, which is reduced by about 39.6%, which improves the dark line brightness of the 360-degree level meter, reduces the display difference between the bright line and the dark line by about 39.6%, and enhances the display effect of the 360-degree level meter, as shown in Figure 10 .

[0062] It should be noted that the fitting of the embodiment adopts the Sinesqr function y=B+A×sin 2 (π(x-C) / 2×W), A is the amplitude parameter, W is the width parameter, C is the center position parameter, and B is the baseline offset. The Sinesqr function is often parameterized to describe waves or pulses with a specific shape, and its general form usually includes baseline offset, center position, width, amplitude, etc. Since this is a function known to those skilled in the art, the embodiment will not be described in more detail here.

[0063] In some alternative embodiments, when the semiconductor laser is a semiconductor green laser, the linear fitting curve of the In / (In+Ga) element relative intensity ratio of the first atomic-level strain regulation layer 104b is y 13 =G 13 x1-H 13 , the slope is G 13 , the intercept is H 13 , wherein 0.01≤G 13 ≤0.05;

[0064] The linear fitting curve of the In / (In+Ga) element relative intensity ratio of the second atomic-level strain regulation layer 104d is y 14 =-G 14 x2+H 14 , the slope is G 14 , the intercept is H 14 , wherein 0.03≤G 14 ≤0.08;

[0065] The linear fitting curve of the In / (In+Ga) element relative intensity ratio of the third atomic-level strain regulation layer 104f is y 15 =G 15 x3-H 15 , the slope is G 15 , the intercept is H 15 , wherein 0.03≤G 15 ≤0.08;

[0066] The linear fitting curve of the In / (In+Ga) element relative intensity ratio of the fourth atomic-level strain regulation layer 104h is y 16 =-G 16 x4+H 16 , the slope is G 16 , the intercept is H 16 , wherein 0.01≤G 16 ≤0.05;

[0067] wherein, 0.01≤G 13 ≤G 16 ≤G 14 ≤G 15 ≤0.8, y 13 , y 14 , y 15 , y 16The In / (In+Ga) element relative intensity ratio of the first atomic-level strain regulation layer 104b, the second atomic-level strain regulation layer 104d, the third atomic-level strain regulation layer 104f and the fourth atomic-level strain regulation layer 104h of the semiconductor green laser is respectively shown in the coordinate axis starting point of the boundary of the active layer 104 and the upper waveguide layer 105, and the coordinate axis ending point of the boundary of the active layer 104 and the nanoscale pre-strain regulation layer 103.

[0068] For the semiconductor green laser with a laser wavelength of 515 nm, the linear fitting curve of the In / (In+Ga) element relative intensity ratio of the first atomic-level strain regulation layer 104b tested by EDX is y 13 =0.0368x1-0.1102, the slope is G 13 =0.0368, as shown in (a) of FIG. Figure 11 The linear fitting curve of the In / (In+Ga) element relative intensity ratio of the second atomic-level strain regulation layer 104d is y 14 =-0.0514x2+0.5714, the slope is G 14 =0.0514, as shown in (b) of FIG. Figure 11 The linear fitting curve of the In / (In+Ga) element relative intensity ratio of the third atomic-level strain regulation layer 104f is y 15 =0.0538x3-0.6154, the slope is G 15 =0.0538, as shown in (c) of FIG. Figure 11 The linear fitting curve of the In / (In+Ga) element relative intensity ratio of the fourth atomic-level strain regulation layer 104h is y 16 =-0.0378x4+0.707, the slope is G 16 =0.0378, as shown in (d) of FIG. Figure 11 Wherein, 0.01≤G 13 =0.0368≤G 16 =0.0378≤G 14 =0.0514≤G 15 =0.0538≤0.8.

[0069] In some optional embodiments, when the semiconductor laser is a semiconductor green laser, the linear fitting curve of the N / (N+In+Ga) element relative intensity ratio of the first atomic-level strain regulation layer 104b is y 21 =G 21 x1+H 21 , the slope is G 21 , and the intercept is H 21 , wherein 0.001≤G 21 ≤0.005, and the fitting curve approaches a straight line.

[0070] The linear fitting curve of the N / (N+In+Ga) element relative intensity ratio of the second atomic-level strain regulation layer 104d is y 22 =-G 22 x2+H 22 , the slope is G 22 , and the intercept is H 22 , wherein 0.001≤G 22 ≤0.005, and the fitting curve approaches a straight line.

[0071] The linear fitting curve of the N / (N+In+Ga) element relative intensity ratio of the third atomic-level strain regulation layer 104f is y 23 =G 23 x3+H 23 , the slope is G 23 , and the intercept is H 23 , wherein 0.0005≤G 23 ≤0.001, and the fitting curve approaches a straight line.

[0072] The linear fitting curve of the N / (N+In+Ga) element relative intensity ratio of the fourth atomic-level strain regulation layer 104h is y 24 =-G 24 x4+H 24 , the slope is G 24 , and the intercept is H 24 , wherein 0.00005≤G 24 ≤0.0005, and the fitting curve approaches a straight line.

[0073] , wherein 0.00005≤G 24 ≤G 23 ≤G 22 ≤G 21 ≤0.005; y 21 , y 22 , y 23 , and y 24 are the N / (N+In+Ga) element relative intensity ratio values of the first atomic-level strain regulation layer 104b, the second atomic-level strain regulation layer 104d, the third atomic-level strain regulation layer 104f, and the fourth atomic-level strain regulation layer 104h of the semiconductor green laser, respectively, and the starting point of the coordinate axis is the boundary between the active layer 104 and the upper waveguide layer 105, and the end point of the coordinate axis is the boundary between the active layer 104 and the nanoscale pre-strain regulation layer 103.

[0074] For a semiconductor green laser with a laser wavelength of 515 nm, the linear fitting curve of the N / (N+In+Ga) element relative intensity ratio of the first atomic-level strain regulation layer 104b tested by EDX is y 21= 0.0022x1 + 0.1832, slope G 21 = 0.0022, the fitting curve approaches a straight line as shown in Figure 12 (b) of FIG. 2; the linear fitting curve of the relative intensity ratio of the N / (N+In+Ga) element of the second atomic-level strain regulation layer 104d is y 22 = -0.0012x2 + 0.2199, slope G 22 = 0.0012, the fitting curve approaches a straight line as shown in Figure 12 (b) of FIG. 2; the linear fitting curve of the relative intensity ratio of the N / (N+In+Ga) element of the third atomic-level strain regulation layer 104f is y 23 = 0.0008x3 + 0.1956, slope G 23 = 0.0008, the fitting curve approaches a straight line as shown in Figure 12 (c) of FIG. 2; the linear fitting curve of the relative intensity ratio of the N / (N+In+Ga) element of the fourth atomic-level strain regulation layer 104h is y 24 = -0.0001x4 + 0.214, slope G 24 = 0.0001, the fitting curve approaches a straight line as shown in Figure 12 (d) of FIG. 2; wherein, 0.00005≤G 24 = 0.0001≤G 23 = 0.0008≤G 22 = 0.0012≤G 21 = 0.0022≤0.005.

[0075] Embodiment 3

[0076] Based on Embodiment 1 and Embodiment 2, the semiconductor laser in this embodiment can also be a super-long-wave green laser. The wavelength range of the super-long-wave green laser is 525nm to 545nm, as shown in Figure 3 When the semiconductor laser is a super-long-wave green laser, the indium element of the first atomic-level strain regulation layer 104b, the second atomic-level strain regulation layer 104d, the third atomic-level strain regulation layer 104f and the fourth atomic-level strain regulation layer 104h has certain variation characteristics.

[0077] Specifically, as shown in Figure 13 When the semiconductor laser is a super-long-wave green laser, the indium element of the first atomic-level strain regulation layer 104b has an upward angle of p, the indium element of the second atomic-level strain regulation layer 104d has a downward angle of d, the indium element of the third atomic-level strain regulation layer 104f has an upward angle of y, and the indium element of the fourth atomic-level strain regulation layer 104h has a downward angle of f, wherein: 15°≤p≤d≤y≤f≤75°.

[0078] In this embodiment, the change angle of the curve is defined as the tangent angle of the starting position of the layer along the curve, and the relative intensity of indium elements is tested by EDX in the SEM device, and EDX is Energy Dispersive X-ray Spectroscopy.

[0079] In some optional embodiments, when the semiconductor laser is an ultra-long-wave green laser, the linear fitting curve of the relative intensity of indium elements of the first atomic-level strain regulation layer 104b is y7=G7x7+H7, the slope is G7, and the intercept is H7, where 0.01≤G7≤0.1;

[0080] The linear fitting curve of the relative intensity of indium elements of the second atomic-level strain regulation layer 104d is y8=-G8x8+H8, the slope is G8, and the intercept is H8, where 0.02≤G8≤0.2;

[0081] The linear fitting curve of the relative intensity of indium elements of the third atomic-level strain regulation layer 104f is y9=G9x9-H9, the slope is G9, and the intercept is H9, where 0.1≤G9≤0.5;

[0082] The linear fitting curve of the relative intensity of indium elements of the fourth atomic-level strain regulation layer 104h is y 10 =-G 10 x 10 +H 10 , the slope is G 10 , and the intercept is H 10 , where 0.1≤G 10 ≤0.5;

[0083] Wherein, 0.01≤G7≤G8≤G9≤G 10 ≤0.5, and 0.01≤G7 / G1≤G8 / G2≤G9 / G3≤G 10 / G4≤0.50 and form a gradient change; y7, y8, y9, y 10 are the relative intensity of indium elements of the first atomic-level strain regulation layer 104b, the second atomic-level strain regulation layer 104d, the third atomic-level strain regulation layer 104f, and the fourth atomic-level strain regulation layer 104h of the ultra-long-wave green laser, respectively, x7, x8, x9, x 10 are the thicknesses of the first atomic-level strain regulation layer 104b, the second atomic-level strain regulation layer 104d, the third atomic-level strain regulation layer 104f, and the fourth atomic-level strain regulation layer 104h of the ultra-long-wave green laser, respectively, and the starting point of the coordinate axis is the boundary between the active layer 104 and the upper waveguide layer 105, and the end point of the coordinate axis is the boundary between the active layer 104 and the nanoscale pre-strain regulation layer 103.

[0084] In order to obtain the super-long wave green laser, the indium component of the quantum well layer of the active layer 104 needs to be increased. The traditional method is to reduce the growth temperature of the active layer 104 and increase the indium source flow, but both of them will damage the crystal quality of the active layer 104 and increase the defect density, resulting in that the laser cannot be lased or quenched. In order to increase the indium component of the active layer 104 of the laser without reducing the crystal quality of the active layer 104, the embodiment increases the atomic level strain regulation layer, accurately controls the change curve of indium and the change curve of indium element of the active layer 104, increases the incorporation efficiency of indium atoms, and thus realizes the super-long wave green laser with a wavelength of 540 nm.

[0085] For the super-long wave green laser with a laser wavelength of 540 nm, the linear fitting curve of the relative intensity of the indium element of the first atomic level strain regulation layer 104b is y7=0.0217x7+0.1357, the slope is G7=0.0217, as shown in the graph (a) in FIG. 7; Figure 14 The linear fitting curve of the relative intensity of the indium element of the second atomic level strain regulation layer 104d is y8=-0.0589x8+1.0191, the slope is G8=0.0589, as shown in the graph (b) in FIG. 7; Figure 14 The linear fitting curve of the relative intensity of the indium element of the third atomic level strain regulation layer 104f is y9=0.1142x9-1.6218, the slope is G9=0.1142, as shown in the graph (c) in FIG. 7; Figure 14 The linear fitting curve of the relative intensity of the indium element of the fourth atomic level strain regulation layer 104h is y 10 =-0.1359x 10 +3.066, the slope is G 10 =0.1359, as shown in the graph (d) in FIG. 7; Figure 14 Wherein, 0.01≤G7=0.0217≤G8=0.0589≤G9=0.1142≤G 10 =0.1359≤0.5. Compared with 0.2≤G4=0.3835≤G1=0.3857≤G3=0.5307≤G2=0.5326≤0.7 of the 515 nm semiconductor green laser, the slope G7=0.0217 of the first atomic level strain regulation layer 104b of the 540 nm super-long wave green laser is lower than G1=0.3857 of the 515 nm semiconductor green laser, that is, the slope ratio of G7 / G1 must be reduced to 0.056, so that the change of the indium element of the first atomic level strain regulation layer 104b is more gentle, thereby reducing the well barrier strain and increasing the incorporation efficiency of the indium element of the active layer 104;

[0086] The slope G8 of the second atomic-level strain regulating layer 104d of the 540 nm super-long wave green laser is 0.0589, and the slope G2 of the second atomic-level strain regulating layer 104d of the 515 nm semiconductor laser is 0.5326, so that G8 / G2=0.11, the indium element of the second atomic-level strain regulating layer 104d changes more gently, thereby reducing the well-barrier strain, and increasing the indium element incorporation efficiency of the active layer 104;

[0087] The slope G9 of the third atomic-level strain regulating layer 104f of the 540 nm super-long wave green laser is 0.1142, and the slope G3 of the third atomic-level strain regulating layer 104f of the 515 nm semiconductor laser is 0.5307, so that G9 / G3=0.215, the indium element of the third atomic-level strain regulating layer 104f changes more gently, thereby reducing the well-barrier strain, and increasing the indium element incorporation efficiency of the active layer 104;

[0088] The slope G 10 of the fourth atomic-level strain regulating layer 104h of the 540 nm super-long wave green laser is 0.1359, and the slope G 10 of the fourth atomic-level strain regulating layer 104h of the 515 nm semiconductor laser is 0.3853, so that G 10 / G4=0.353, the indium element of the fourth atomic-level strain regulating layer 104h changes more gently, thereby reducing the well-barrier strain, and increasing the indium element incorporation efficiency of the active layer 104;

[0089] The slope ratio of the first atomic-level strain regulating layer 104b, the second atomic-level strain regulating layer 104d, the third atomic-level strain regulating layer 104f, and the fourth atomic-level strain regulating layer 104h of the 540 nm super-long wave green laser and the 515 nm semiconductor green laser is accurately controlled, and G7 / G1=0.056≤G8 / G2=0.11≤G9 / G3=0.215≤G 10 / G4=0.353 is formed, further regulating the strain of the well layer and the barrier layer of the active layer 104 and the upper waveguide layer 105 and the lower waveguide layer 102, reducing the influence of each layer on the strain of the active layer 104, further improving the indium element incorporation efficiency of the active layer 104, so that the laser emission wavelength of the semiconductor green laser is increased from 515 nm to 540 nm of the super-long wave green laser.

[0090] In some optional embodiments, when the semiconductor laser is a super-long wave green laser, the fitting curve of the relative intensity curve of the indium element of the first quantum well 1041 of the active layer 104 satisfies the following function relationship: y 11 =B 11 +A 11 ×sin 2 (π(x 11 -C11 ) / 2xW 11 , wherein 0.1≤B 11 ≤0.4, 0.1≤A 11 ≤0.6, 4≤C 11 ≤8, 7≤W 11 ≤11;

[0091] The fitting curve of the indium element relative intensity curve of the second quantum well 1042 of the active layer 104 satisfies the following function relationship: y 12 =B 12 +A 12 xsin 2 (π(x 12 -C 12 ) / 2xW 12 ), wherein 0.1≤B 12 ≤0.4, 0.1≤A 12 ≤0.5, 6≤C 12 ≤10, 5≤W 12 ≤9;

[0092] wherein A is an amplitude parameter, W is a width parameter, C is a center position parameter, B is a baseline offset, y 11 , y 12 are the indium element relative intensities of the first quantum well 1041 and the second quantum well 1042 of the super-long wave green laser respectively, x 11 , x 12 are the thicknesses of the first quantum well 1041 and the second quantum well 1042 of the super-long wave green laser respectively, and the origin of the coordinate axis is the boundary between the active layer 104 and the upper waveguide layer 105, and the end of the coordinate axis is the boundary between the active layer 104 and the nanoscale pre-strain regulation layer 103.

[0093] For a super-long wave green laser with a laser wavelength of 540 nm, the fitting curve of the indium element relative intensity curve of the first quantum well 1041 of the active layer 104 satisfies the following function relationship: y 11 =0.2+0.3xsin 2 (π(x 11 -6) / 2x9), and the fitting curve of the indium element relative intensity curve of the second quantum well 1042 of the active layer 104 satisfies the following function relationship: y 12 =0.2+0.3xsin 2 (π(x 12 -8) / 2x7), as shown in FIGS. Figure 13 and Figure 15 Through more accurate atomic-level indium element curve design and control, the strain of the active layer 104 is effectively regulated at the atomic scale, the efficiency of indium atoms is increased, and the wavelength of the green laser is increased from 515 nm to 540 nm.

[0094] In some optional embodiments, when the semiconductor laser is an ultra-long-wave green laser, the linear fitting curve of the In / (In+Ga) element relative intensity ratio of the first atomic-level strain regulation layer 104b is y 17 =G 17 x7+H 17 , the slope is G 17 , and the intercept is H 17 , wherein 0.001≤G 17 ≤0.005;

[0095] The linear fitting curve of the In / (In+Ga) element relative intensity ratio of the second atomic-level strain regulation layer 104d is y 18 =-G 18 x8+H 18 , the slope is G 18 , and the intercept is H 18 , wherein 0.005≤G 18 ≤0.03;

[0096] The linear fitting curve of the In / (In+Ga) element relative intensity ratio of the third atomic-level strain regulation layer 104f is y 19 =G 19 x9-H 19 , the slope is G 19 , and the intercept is H 19 , wherein 0.01≤G 19 ≤0.03;

[0097] The linear fitting curve of the In / (In+Ga) element relative intensity ratio of the fourth atomic-level strain regulation layer 104h is y 20 =-G 20 x 10 +H 20 , the slope is G 20 , and the intercept is H 20 , wherein 0.01≤G 20 ≤0.05;

[0098] wherein, 0.0001≤G 17 ≤G 18 ≤G 19 ≤G 20 ≤0.8, and 5≤G 13 / G 17 ≤15, 1≤G 14 / G 18 ≤7, 1≤G 15 / G 19 ≤4, 0.5≤G 16 / G 20 ≤3, and 0.5≤G16 / G 20 ≤G 15 / G 19 ≤G 14 / G 18 ≤G 13 / G 17 ≤15, y 17 y 18 y 19 y 20 The values ​​represent the relative intensity ratios of the In / (In+Ga) elements in the first atomic-level strain control layer 104b, the second atomic-level strain control layer 104d, the third atomic-level strain control layer 104f, and the fourth atomic-level strain control layer 104h of the ultra-long wavelength green laser. The starting point of the coordinate axis is the boundary between the active layer 104 and the upper waveguide layer 105, and the ending point of the coordinate axis is the boundary between the active layer 104 and the nanoscale pre-strain control layer 103.

[0099] To realize an ultra-long wavelength green laser, it is necessary to increase the indium incorporation efficiency of the active layer 104 of the semiconductor laser. By finely controlling the slope of the In / (In+Ga) element intensity ratio in the atomically strain-controlled layer of the ultra-long wavelength green laser, the slope ratio between the ultra-long wavelength green laser and the semiconductor green laser can satisfy the following relationship. This allows for atomically fine-tuning of the stress in the active layer 104, improving the indium incorporation efficiency and the quality of the active layer 104, where: 5≤G 13 / G 17 ≤15, 1≤G 14 / G 18 ≤7, 1≤G 15 / G 19 ≤4, 0.5≤G 16 / G 20 ≤3, and 0.5≤G 16 / G 20 ≤G 15 / G 19 ≤G 14 / G 18 ≤G 13 / G 17 ≤15.

[0100] For an ultra-long-wavelength green laser with a wavelength of 540 nm, the linear fitting curve of the relative intensity ratio of In / (In+Ga) elements in the first atomic-level strain-controlled layer 104b, measured by EDX, is y. 17 =0.0042x7+0.0298, slope is G 17 =0.0042, as Figure 16 As shown in Figure (a), the linear fitting curve of the relative intensity ratio of In / (In+Ga) elements in the second atomic-level strain-controlled layer 104d is y. 18= -0.0121x8 + 0.2088, slope G 18 = 0.0121, as shown in Figure 16 (b) of the figure; the linear fitting curve of the In / (In+Ga) element relative intensity ratio of the third atomic-level strain regulation layer 104f is y19=0.023x9-0.3272, slope G 19 = 0.023, as shown in Figure 16 (c) of the figure; the linear fitting curve of the In / (In+Ga) element relative intensity ratio of the fourth atomic-level strain regulation layer 104h is y 20 = -0.0274x 10 + 0.6155, slope G 20 = 0.0274, as shown in Figure 16 (d) of the figure; wherein 0.0001≤G 17 = 0.0042≤G 18 = 0.0121≤G 19 = 0.023≤G 20 = 0.0274≤0.8.

[0101] In order to realize the super-long wave green laser, it is necessary to increase the indium element incorporation efficiency of the semiconductor laser active layer 104, control the slope of the In / (In+Ga) element intensity ratio of the atomic-level strain regulation layer of the super-long wave green laser, and make the super-long wave green laser and the semiconductor green laser satisfy the following relationship: 5≤G 13 / G 17 = 8.76≤15, 1≤G 14 / G 18 = 4.28≤7, 1≤G 15 / G 19 = 2.34≤4, 0.5≤G 16 / G 20 = 1.38≤3, control the slope of the In / (In+Ga) element intensity ratio of the atomic-level strain regulation layer of the super-long wave green laser, regulate the strain of the active layer 104 well and the barrier layer, accurately regulate the stress at the atomic level, optimize the indium atom incorporation efficiency, and improve the wavelength of the super-long wave green laser. At the same time, control the slope ratio and change trend of the In / (In+Ga) element intensity ratio of the atomic-level strain regulation layer of the super-long wave green laser and the semiconductor green laser 0.5≤G 16 / G 20 = 1.38≤G 15 / G 19 = 2.34≤G 14 / G 18 = 4.28≤G 13 / G 17 =8.76≤15, forming a slope proportional gradient, further regulating the atomic level stress variation of the active layer 104 quantum well layer and the upper waveguide layer 105 and the lower waveguide layer 102, further improving the indium atom incorporation efficiency of the quantum well layer, and under the condition of not reducing the crystal quality of the active layer 104, the laser emission wavelength of the active layer 104 is increased from 515 nm to 540 nm.

[0102] In some optional embodiments, when the semiconductor laser is an ultra-long-wave green laser, the linear fitting curve of the relative intensity ratio of N / (N+In+Ga) elements of the first atomic level strain regulating layer 104b is y 25 =-G 25 x7+H 25 , the slope is G 25 , and the intercept is H 25 , wherein 0.001≤G 25 ≤0.005;

[0103] The linear fitting curve of the relative intensity ratio of N / (N+In+Ga) elements of the second atomic level strain regulating layer 104d is y 26 =G 26 x8+H 26 , the slope is G 26 , and the intercept is H 26 , wherein 0.0003≤G 26 ≤0.0009;

[0104] The linear fitting curve of the relative intensity ratio of N / (N+In+Ga) elements of the third atomic level strain regulating layer 104f is y 27 =-G 27 x9+H 27 , the slope is G 27 , and the intercept is H 27 , wherein 0.001≤G 27 ≤0.005;

[0105] The linear fitting curve of the relative intensity ratio of N / (N+In+Ga) elements of the fourth atomic level strain regulating layer 104h is y 28 =-G 28 x 10 +H 28 , the slope is G 28 , and the intercept is H 28 , wherein 0.001≤G 28 ≤0.005;

[0106] wherein, 0.0001≤G 26 ≤G 28 ≤G 25 ≤G 27≤0.8, and 0.5≤G 21 / G 25 ≤2, 1≤G 22 / G 26 ≤3, 0.1≤G 23 / G 27 ≤0.6, 0.02≤G 24 / G 28 ≤0.1, and 0.5≤G 24 / G 28 ≤G 23 / G 27 ≤G 21 / G 25 ≤G 22 / G 26 ≤15, y 25 , y 26 , y 27 , y 28 are the N / (N+In+Ga) element relative intensity ratio values of the first atomic-level strain control layer 104b, the second atomic-level strain control layer 104d, the third atomic-level strain control layer 104f, and the fourth atomic-level strain control layer 104h of the super-long-wave green laser, respectively, and the coordinate axis origin is the boundary between the active layer 104 and the upper waveguide layer 105, and the coordinate axis end is the boundary between the active layer 104 and the nanoscale pre-strain control layer 103.

[0107] In order to realize the super-long-wave green laser, after increasing the incorporation efficiency of the indium element of the semiconductor laser active layer 104, because the increase of the indium component will reduce the crystal quality and N vacancy defects and N interstitial defects of the active layer 104, by controlling the slope of the N / (N+In+Ga) element intensity ratio of the atomic-level strain control layer of the super-long-wave green laser, the N / (N+In+Ga) element intensity ratio fitting curve tends to be a straight line, the super-long-wave green laser and the semiconductor green laser satisfy the following relationship, the active layer 104 stress can be fine-tuned at the atomic level, the formation and diffusion of N vacancy defects and N interstitial defects are suppressed, thereby reducing the density of N vacancy defects and N interstitial defects, reducing deep-level impurities, reducing the capture probability of carriers in the active layer 104 by N vacancy defects and N interstitial defects, reducing the quenching ratio of the super-long-wave green laser, and at the same time, improving the incorporation efficiency of the indium element and the quality and quantum efficiency of the active layer 104, wherein: 0.5≤G 21 / G 25 ≤2, 1≤G 22 / G 26 ≤3, 0.1≤G 23 / G 27 ≤0.6, 0.02≤G 24 / G 28 ≤0.1, and 0.5≤G 24 / G28 ≤G 23 / G 27 ≤G 21 / G 25 ≤G 22 / G 26 ≤15.

[0108] For an ultra-long-wavelength green laser with a wavelength of 540 nm, the linear fitting curve of the relative intensity ratio of N / (N+In+Ga) elements in the first atomically strain-controlled layer 104b, measured using EDX, is y. 25 =-0.0022x7+0.236, slope is G 25 =0.0022, such as Figure 17 As shown in Figure (a), the linear fitting curve of the relative intensity ratio of N / (N+In+Ga) elements in the second atomic-level strain-controlled layer 104d is y. 26 =0.0007x8+0.2071, the slope is G 26 =0.0007, such as Figure 17 As shown in Figure (b), the linear fitting curve of the relative intensity ratio of N / (N+In+Ga) of the third atomic-level strain-controlled layer 104f is y. 27 =-0.0024x9+0.2616, slope is G 27 =0.0024, such as Figure 17 As shown in Figure (c), the linear fitting curve of the relative intensity ratio of N / (N+In+Ga) elements in the fourth atomic-level strain-controlled layer 104h is y. 28 =-0.0019x 10 +0.2493, slope is G 28 =0.0019, such as Figure 17 As shown in Figure (d); where 0.0001≤G 26 =0.0007≤G 28 =0.001≤G 25 =0.0022≤G 27 =0.0024≤0.8.

[0109] To realize an ultra-long wavelength green laser, increasing the indium incorporation efficiency of the active layer 104 of the semiconductor laser reduces the crystal quality and N-vacancy and interstitial defects of the active layer 104. By coarsely controlling the slope of the N / (N+In+Ga) intensity ratio in the atomically strain-controlled layer of the ultra-long wavelength green laser, the N / (N+In+Ga) intensity ratio fitting curve is made to trend towards a straight line. The slope ratio and gradient change relationship of the N / (N+In+Ga) intensity of the ultra-long wavelength green laser and the semiconductor green laser are shown, where: 0.5≤G 21 / G25 =1≤2, 1≤G 22 / G 26 =1.71≤3, 0.1≤G 23 / G 27 =0.33≤0.6, 0.02≤G 24 / G 28 =0.1≤0.1, and 0.5≤G 24 / G 28 =0.1≤G 23 / G 27 =0.33≤G 21 / G 25 =1≤G 22 / G 26 =1.71≤15, the stress of the active layer 104 can be fine-tuned at the atomic level, the formation and diffusion of N-vacancy defects and N-interstitial defects can be suppressed, the density of N-vacancy defects and N-interstitial defects can be reduced, deep-level impurities can be reduced, the capture probability of carriers in the active layer 104 by N-vacancy defects and N-interstitial defects can be reduced, the quenching ratio of the super-long-wave green laser can be reduced, and meanwhile, the incorporation efficiency of indium elements and the quality and quantum efficiency of the active layer 104 can be improved.

[0110] Obviously, various modifications and changes can be made to the present application by those skilled in the art without departing from the spirit and scope of the present application. Accordingly, it is intended to include all such modifications and changes in the scope of the present application and its equivalents.

Claims

1. A semiconductor laser comprising, from bottom to top, a substrate, a lower confinement layer, a lower waveguide layer, an active layer, an upper waveguide layer, and an upper confinement layer, characterized in that, The nanoscale pre-strain regulation layer is arranged between the lower waveguide layer and the active layer, the active layer comprises a first quantum well and a second quantum well, the first quantum well is located above the second quantum well, the first quantum well comprises a first barrier layer, a first atomic scale strain regulation layer, a first well layer and a second atomic scale strain regulation layer arranged in sequence from top to bottom, the second quantum well comprises a second barrier layer, a third atomic scale strain regulation layer, a second well layer, a fourth atomic scale strain regulation layer and a third barrier layer arranged in sequence from top to bottom, the thickness and strain regulation precision of the nanoscale pre-strain regulation layer are nanoscale, and the thickness and strain regulation precision of the first atomic scale strain regulation layer, the second atomic scale strain regulation layer, the third atomic scale strain regulation layer and the fourth atomic scale strain regulation layer are atomic scale; The semiconductor laser is a semiconductor green laser or an ultralong-wave green laser; When the semiconductor laser is a semiconductor green laser, an upward angle of indium elements of the first atomic scale strain regulation layer is α, a downward angle of indium elements of the second atomic scale strain regulation layer is β, an upward angle of indium elements of the third atomic scale strain regulation layer is γ, and a downward angle of indium elements of the fourth atomic scale strain regulation layer is θ, and 30°≤θ≤α≤β≤γ≤85°; When the semiconductor laser is an ultralong-wave green laser, an upward angle of indium elements of the first atomic scale strain regulation layer is ρ, a downward angle of indium elements of the second atomic scale strain regulation layer is δ, an upward angle of indium elements of the third atomic scale strain regulation layer is ψ, and a downward angle of indium elements of the fourth atomic scale strain regulation layer is φ, and 15°≤ρ≤δ≤ψ≤φ≤75°.

2. The semiconductor laser of claim 1, wherein When the semiconductor laser is a semiconductor green laser, a linear fitting curve of relative intensity of indium elements of the first atomic scale strain regulation layer is y1=G1x1-H1, a slope is G1, and an intercept is H1, and 0.2≤G1≤0.5; A linear fitting curve of relative intensity of indium elements of the second atomic scale strain regulation layer is y2=-G2x2+H2, a slope is G2, and an intercept is H2, and 0.4≤G2≤0.7; A linear fitting curve of relative intensity of indium elements of the third atomic scale strain regulation layer is y3=G3x3-H3, a slope is G3, and an intercept is H3, and 0.4≤G3≤0.7; A linear fitting curve of relative intensity of indium elements of the fourth atomic scale strain regulation layer is y4=-G4x4+H4, a slope is G4, and an intercept is H4, and 0.2≤G4≤0.5; Wherein, 0.2≤G4≤G1≤G3≤G2≤0.7; y1, y2, y3, y4 are the relative intensity of indium elements of the first atomic-level strain regulating layer, the second atomic-level strain regulating layer, the third atomic-level strain regulating layer and the fourth atomic-level strain regulating layer of the semiconductor green laser respectively; x1, x2, x3, x4 are the thickness of the first atomic-level strain regulating layer, the second atomic-level strain regulating layer, the third atomic-level strain regulating layer and the fourth atomic-level strain regulating layer of the semiconductor green laser respectively; the starting point of the coordinate axis is the boundary between the active layer and the upper waveguide layer; and the end point of the coordinate axis is the boundary between the active layer and the nanoscale pre-strain regulating layer.

3. The semiconductor laser of claim 1, wherein, When the semiconductor laser is a semiconductor green laser, a fitting curve of a relative intensity curve of indium intensity of the first quantum well of the active layer satisfies the following function relationship: y5=B5+A5*sin 2 (π(x5-C5) / 2×W5), wherein 0.2≤B5≤0.5, 1.0≤A5≤3.0, 2≤C5≤6, and 5≤W5≤9. The fitting curve of the relative strength curve of the indium strength of the second quantum well of the active layer satisfies the following function relationship: y6=B6+A6×sin 2 (π(x6-C6) / 2×W6), wherein 0.2≤B6≤0.5, 1.0≤A6≤3.0, 3≤C6≤7, 5≤W6≤9; Wherein, A is an amplitude parameter, W is a width parameter, C is a center position parameter, B is a baseline offset, y5, y6 are the relative intensity of indium elements of the first quantum well and the second quantum well of the semiconductor green laser respectively, x5, x6 are the thickness of the first quantum well and the second quantum well of the semiconductor green laser respectively, the starting point of the coordinate axis is the boundary between the active layer and the upper waveguide layer, and the end point of the coordinate axis is the boundary between the active layer and the nanoscale pre-strain regulating layer.

4. The semiconductor laser of claim 1, wherein, The wavelength range of the semiconductor green laser is 510nm to 525nm; The linear fitting curve of the relative intensity ratio of In / (In+Ga) elements of the first atomically strained regulation layer is y 13 =G 13 x1-H 13 , the slope is G 13 , and the intercept is H 13 , wherein 0.01≤G 13 ≤0.05; The linear fitting curve of the relative intensity ratio of In / (In+Ga) elements of the second atomically strained regulation layer is y 14 =-G 14 x2+H 14 , the slope is G 14 , and the intercept is H 14 , wherein 0.03≤G 14 ≤0.

08. A linear fitting curve of the relative intensity ratio of In / (In+Ga) elements of the third atomically strained regulation layer is y 15 =G 15 x3-H 15 , the slope is G 15 , the intercept is H 15 , wherein 0.03 15 ≤G ≤0.08; The linear fitting curve of the relative intensity ratio of In / (In+Ga) elements of the fourth atomically strained regulation layer is y 16 =-G 16 x4+H 16 , the slope is G 16 , and the intercept is H 16 , wherein 0.01≤G 16 ≤0.

05. wherein 0.01≤G 13 wherein 0.01≤G 16 wherein 0.01≤G 14 wherein 0.01≤G 15 wherein 0.01≤G 13 wherein 0.01≤G 14 wherein 0.01≤G 15 wherein 0.01≤G 16 are the In / (In+Ga) element relative intensity ratio values of the first atomic-level strain regulating layer, the second atomic-level strain regulating layer, the third atomic-level strain regulating layer and the fourth atomic-level strain regulating layer of the semiconductor green laser, respectively, the coordinate axis starting point is the boundary between the active layer and the upper waveguide layer, and the coordinate axis end point is the boundary between the active layer and the nanoscale pre-strain regulating layer.

5. The semiconductor laser of claim 1, wherein, When the semiconductor laser is a semiconductor green laser, the linear fitting curve of the relative intensity ratio of the N / (N+In+Ga) element in the first atomic-level strain-controlled layer is y. 21 =G 21 x1+H 21 The slope is G 21 The intercept is H 21 , where 0.001≤G 21 ≤0.005; A linear fitting curve of the relative intensity ratio of the N / (N+In+Ga) element of the second atomically strained regulation layer is y 22 =-G 22 x2+H 22 , the slope is G 22 , and the intercept is H 22 , wherein 0.001≤G 22 ≤0.

005. The linear fitting curve of the relative intensity ratio of the N / (N+In+Ga) element of the third atomically strained regulation layer is y 23 =G 23 x3+H 23 , the slope is G 23 , the intercept is H 23 , wherein 0.0005≤G 23 ≤0.001; A linear fitting curve of the relative intensity ratio of the N / (N+In+Ga) element of the fourth atomically strained regulation layer is y 24 =-G 24 x4+H 24 , the slope is G 24 , and the intercept is H 24 , wherein 0.00005≤G 24 ≤0.0005. wherein 0.00005≤G 24 wherein 0.00005≤G 23 wherein 0.00005≤G 22 wherein 0.00005≤G 21 wherein 0.00005≤G 21 wherein 0.00005≤G 22 wherein 0.00005≤G 23 wherein 0.00005≤G 24 are the N / (N+In+Ga) element relative intensity proportion values of the first atomic-level strain regulating layer, the second atomic-level strain regulating layer, the third atomic-level strain regulating layer and the fourth atomic-level strain regulating layer of the semiconductor green laser respectively, the coordinate axis starting point is the boundary of the active layer and the upper waveguide layer, and the coordinate axis end point is the boundary of the active layer and the nanoscale pre-strain regulating layer.

6. The semiconductor laser of claim 2, wherein, When the semiconductor laser is an ultralong-wave green laser, the linear fitting curve of the relative intensity of indium elements of the first atomic-level strain regulating layer is y7=G7x7+H7, the slope is G7, and the intercept is H7, wherein 0.01≤G7≤0.1; The linear fitting curve of the relative intensity of indium elements of the second atomic-level strain regulating layer is y8=-G8x8+H8, the slope is G8, and the intercept is H8, wherein 0.02≤G8≤0.2; The linear fitting curve of the relative intensity of indium elements of the third atomic-level strain regulating layer is y9=G9x9-H9, the slope is G9, and the intercept is H9, wherein 0.1≤G9≤0.5; The linear fitting curve of the relative intensity of indium element of the fourth atomically strained regulation layer is y 10 = -G 10 x 10 + H 10 , the slope is G 10 , and the intercept is H 10 , wherein 0.1≤G 10 ≤0.

5. Wherein, 0.01≤G7≤G8≤G9≤G 10 ≤0.5, and 0.01≤G7 / G1≤G8 / G2≤G9 / G3≤G 10 / G4≤0.50 and form a gradient change; y7, y8, y9, y 10 are the relative intensities of the indium element of the first atomic-level strain control layer, the second atomic-level strain control layer, the third atomic-level strain control layer, and the fourth atomic-level strain control layer of the super-long wave green laser, respectively, x7, x8, x9, x 10 are the thicknesses of the first atomic-level strain control layer, the second atomic-level strain control layer, the third atomic-level strain control layer, and the fourth atomic-level strain control layer of the super-long wave green laser, respectively, with the origin of the coordinate axis being the boundary between the active layer and the upper waveguide layer, and the terminal point of the coordinate axis being the boundary between the active layer and the nanoscale pre-strain control layer.

7. The semiconductor laser of claim 1, wherein, When the semiconductor laser is an ultra-long-wave green laser, a fitting curve of a relative intensity curve of indium elements of the first quantum well of the active layer satisfies the following function relationship: y 11 =B 11 +A 11 ×sin 2 (π(x 11 -C 11 ) / 2×W 11 ), wherein 0.1≤B 11 ≤0.4, 0.1≤A 11 ≤0.6, 4≤C 11 ≤8, 7≤W 11 ≤11. A fitted curve of the indium element relative intensity curve of the second quantum well of the active layer satisfies the following function relationship: y 12 =B 12 +A 12 ×sin 2 (π(x 12 -C 12 ) / 2×W 12 ), wherein 0.1≤B 12 ≤0.4, 0.1≤A 12 ≤0.5, 6≤C 12 ≤10, 5≤W 12 ≤9; Wherein, A is an amplitude parameter, W is a width parameter, C is a center position parameter, B is a baseline offset, y 11 , y 12 are the relative strengths of indium elements of the first quantum well and the second quantum well of the super-long wave green laser respectively, x 11 , x 12 are the thicknesses of the first quantum well and the second quantum well of the super-long wave green laser respectively, the origin of the coordinate axis is the boundary of the active layer and the upper waveguide layer, and the terminal of the coordinate axis is the boundary of the active layer and the nanoscale pre-strain regulation layer.

8. The semiconductor laser of claim 4, wherein, The wavelength range of the ultralong-wave green laser is 525nm-545nm; The linear fitting curve of the relative intensity ratio of In / (In+Ga) elements of the first atomically strained regulation layer is y 17 =G 17 x7+H 17 , the slope is G 17 , and the intercept is H 17 , wherein 0.001≤G 17 ≤0.005; A linear fitting curve of the In / (In+Ga) element relative intensity ratio of the second atomically strained regulation layer is y 18 =-G 18 x8+H 18 , the slope is G 18 , and the intercept is H 18 , wherein 0.005≤G 18 ≤0.03; The linear fitting curve of the relative intensity ratio of In / (In+Ga) elements of the third atomically strained regulation layer is y 19 =G 19 x9-H 19 , the slope is G 19 , and the intercept is H 19 , wherein 0.01≤G 19 ≤0.03; The linear fitting curve of the relative intensity ratio of In / (In+Ga) elements of the fourth atomically strained regulation layer is y 20 =-G 20 x 10 +H 20 , the slope is G 20 , and the intercept is H 20 , wherein 0.01≤G 20 ≤0.

05. wherein 0.0001≤G 17 wherein 0.0001≤G 18 wherein 0.0001≤G 19 wherein 0.0001≤G 20 wherein 0.0001≤G 13 wherein 0.0001≤G 17 wherein 0.0001≤G 14 wherein 0.0001≤G 18 wherein 0.0001≤G 15 wherein 0.0001≤G 19 wherein 0.0001≤G 16 wherein 0.0001≤G 20 wherein 0.0001≤G 16 wherein 0.0001≤G 20 wherein 0.0001≤G 15 wherein 0.0001≤G 19 wherein 0.0001≤G 14 wherein 0.0001≤G 18 wherein 0.0001≤G 13 wherein 0.0001≤G 17 wherein 0.0001≤G 17 wherein 0.0001≤G 18 wherein 0.0001≤G 19 wherein 0.0001≤G 20 are the In / (In+Ga) element relative intensity ratio values of the first atomic-level strain control layer, the second atomic-level strain control layer, the third atomic-level strain control layer and the fourth atomic-level strain control layer of the ultra-long-wave green laser, respectively, the coordinate axis origin is the boundary of the active layer and the upper waveguide layer, and the coordinate axis end is the boundary of the active layer and the nanoscale pre-strain control layer.

9. The semiconductor laser of claim 5, wherein, When the semiconductor laser is an ultra-long-wave green laser, a linear fitting curve of a relative intensity ratio of N / (N+In+Ga) elements of the first atomically-strained regulation layer is y 25 =-G 25 x7+H 25 , a slope of the linear fitting curve is G 25 , and an intercept of the linear fitting curve is H 25 , wherein 0.001≤G 25 ≤0.

005. A linear fitting curve of the relative intensity ratio of the N / (N+In+Ga) element of the second atomically strained regulation layer is y 26 =G 26 x8+H 26 , the slope is G 26 , the intercept is H 26 , wherein 0.0003 26 ≤G 26 ≤0.0009; The linear fitting curve of the relative intensity ratio of the N / (N+In+Ga) element of the third atomically strained regulation layer is y 27 = -G 27 x + H 27 , the slope is G 27 , and the intercept is H 27 , wherein 0.001≤G 27 ≤0.

005. The linear fitting curve of the relative intensity ratio of the N / (N+In+Ga) element of the fourth atomically strained regulation layer is y 28 =-G 28 x 10 +H 28 , the slope is G 28 , and the intercept is H 28 , wherein 0.001≤G 28 ≤0.

005. wherein 0.0001≤G 26 wherein 0.0001≤G 28 wherein 0.0001≤G 25 wherein 0.0001≤G 27 wherein 0.0001≤G 21 wherein 0.0001≤G 25 wherein 0.0001≤G 22 wherein 0.0001≤G 26 wherein 0.0001≤G 23 wherein 0.0001≤G 27 wherein 0.0001≤G 24 wherein 0.0001≤G 28 wherein 0.0001≤G 24 wherein 0.0001≤G 28 wherein 0.0001≤G 23 wherein 0.0001≤G 27 wherein 0.0001≤G 21 wherein 0.0001≤G 25 wherein 0.0001≤G 22 wherein 0.0001≤G 26 wherein 0.0001≤G 25 wherein 0.0001≤G 26 wherein 0.0001≤G 27 wherein 0.0001≤G 28 are the N / (N+In+Ga) element relative intensity ratio values of the first atomic-level strain control layer, the second atomic-level strain control layer, the third atomic-level strain control layer, and the fourth atomic-level strain control layer of the ultra-long-wave green laser, respectively, the coordinate axis origin is the boundary between the active layer and the upper waveguide layer, and the coordinate axis end is the boundary between the active layer and the nanoscale pre-strain control layer.

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