Multi-wavelength light emitting diode chip, chip set thereof and display module

Abstract

The invention provides a multi-wavelength light-emitting diode chip, a chip set thereof and a display module, and relates to the technical field of semiconductors, the multi-wavelength light-emitting diode chip is characterized in that N light-emitting layers are stacked between an N-type electrode and a P-type electrode, and an electric field is formed between the N-type electrode and the P-type electrode; according to the multi-wavelength light-emitting diode chip, the light-emitting layer is regulated and controlled to emit light with different numbers of wavelengths by regulating and controlling voltage / current, so that the problems of preparation difficulty, yield, cost and the like in a process represented by mass transfer in an ultra-high-density pixel display product can be solved, and the multi-wavelength light-emitting diode chip is simple in preparation process, low in preparation difficulty, high in photoelectric conversion efficiency and high in yield. The light-emitting diode is simple in structure and low in light loss, can flexibly adjust the sizes of the multi-wavelength light-emitting diode chip and the RGB full-color chip group, and widens the application scenes and application boundaries of the light-emitting diode, the chip group thereof and the display module.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor technology, and in particular to a multi-wavelength light emitting diode chip and a chip set and a display module thereof. BACKGROUND

[0002] In the field of semiconductor lighting technology, a light emitting diode (LED) as a light emitting device for converting electrical energy into light energy has the advantages of energy saving, environmental protection, long service life and high luminous efficiency, and is widely used in indication, display, decoration, lighting and other fields.

[0003] In the display field, ultra-high-density display products mainly using micro light emitting diodes (micro LED) and mini LED usually use three independent single chips to form a pixel unit, that is, three single-chip single-color single-pixel are used to form a pixel unit. The number of chips in the micro LED or mini LED is huge and the chip size is small. In the process, a large number of transfer processes are required. The use of single-chip multi-color chips can solve the problems of process, yield and cost caused by the large number of transfer processes, but the single-chip multi-color chips in the prior art usually need to be prepared by using multiple epitaxy technologies or multiple PN junctions and adding tunnel junctions, or by using multiple light emitting layers stacked and adding a filter layer.

[0004] However, the multiple epitaxy technologies are complex and affect the light efficiency, which is difficult to mass-produce. Multiple PN junctions and adding tunnel junctions will complicate the preparation process. The single-chip multi-color chip obtained by using multiple light emitting layers stacked and adding a filter layer uses carriers commonly by multiple light emitting layers, and the light efficiency is low. After passing through the filter layer, the photoelectric conversion efficiency is further reduced, resulting in high light loss. In particular, the light efficiency of long wavelengths such as red light is low, and the use of multiple light emitting layers to share carriers and the filter layer design will further reduce the light efficiency, so that it cannot be normally applied in products. SUMMARY

[0005] The embodiments of the present application provide a multi-wavelength light emitting diode chip and a chip set and a display module thereof, which can reduce the number and difficulty of large-scale transfer, thereby overcoming the problems of preparation difficulty, yield and cost in the process represented by large-scale transfer in ultra-high-density pixel display products. The multi-wavelength light emitting diode chip is a single-chip multi-color chip, which has simple preparation process, low preparation difficulty, high photoelectric conversion efficiency and low light loss. At the same time, the size of the multi-wavelength light emitting diode chip and the RGB full-color chip set can be flexibly adjusted, which widens the application scenarios and application boundaries of the light emitting diode, the chip set and the display module.

[0006] In a first aspect, the embodiments of the present application provide a multi-wavelength light-emitting diode chip, comprising: an N-type electrode, a P-type electrode, and N light-emitting layers. The N light-emitting layers are stacked between the N-type electrode and the P-type electrode and are electrically connected to the N-type electrode and the P-type electrode, respectively; the sum of the thicknesses of the N light-emitting layers is less than the hole diffusion length of the P-type electrode. The number of light-emitting wavelengths of the N light-emitting layers is n; N and n are both positive integers greater than or equal to 2.

[0007] An electric field is formed between the N-type electrode and the P-type electrode; the multi-wavelength light-emitting diode chip is configured to emit light of different numbers of wavelengths according to different voltage values or current values of the electric field, and the number of wavelengths is greater than or equal to 1.

[0008] In the multi-wavelength light-emitting diode chip described above, optionally, the plurality of light-emitting layers form m sub-pixels, m is a positive integer greater than or equal to 2; m is greater than or equal to n; the m sub-pixels are arranged in an array along a direction perpendicular to the N-type electrode to the P-type electrode.

[0009] In the multi-wavelength light-emitting diode chip described above, optionally, the m sub-pixels are arranged at intervals along a direction perpendicular to the N-type electrode to the P-type electrode; an isolation structure is arranged between adjacent sub-pixels.

[0010] In the multi-wavelength light-emitting diode chip described above, optionally, the isolation structure comprises a trench; or, the isolation structure comprises a trench and an isolation material arranged in the trench; or, the isolation structure is an ion implantation layer.

[0011] In the multi-wavelength light-emitting diode chip described above, optionally, further comprising an N-type semiconductor layer stacked on a side of the light-emitting layer close to the N-type electrode and connected to the N-type electrode; the light-emitting layer is electrically connected to the N-type electrode through the N-type semiconductor layer.

[0012] In the multi-wavelength light-emitting diode chip described above, optionally, further comprising a P-type semiconductor layer stacked on a side of the light-emitting layer close to the P-type electrode and connected to the P-type electrode; the light-emitting layer is electrically connected to the P-type electrode through the P-type semiconductor layer.

[0013] In the multi-wavelength light-emitting diode chip described above, optionally, further comprising a light modulation layer arranged on a side of the N-type electrode away from the light-emitting layer or arranged on a side of the P-type electrode away from the light-emitting layer.

[0014] In the multi-wavelength light-emitting diode chip described above, optionally, the light modulation layer comprises a filter or a Bragg reflection layer.

[0015] In the multi-wavelength light-emitting diode chip described above, optionally, the light-emitting layer is configured to:

[0016] The greater the voltage value or current value of the electric field, the more wavelengths of light emitted by the light-emitting layer;

[0017] The light-emitting layer emits light with one wavelength when the voltage value or current value of the electric field is the smallest.

[0018] In the multi-wavelength light-emitting diode chip described above, optionally, the N-type electrode includes m sub-N-type electrodes that are separate from each other; and the N-type semiconductor layer includes m sub-N-type semiconductor layers that are separate from each other.

[0019] The m sub-pixels, which are close to one side of the N-type semiconductor layer, are in one-to-one correspondence with the m sub-N-type semiconductor layers and are in conductive contact with the m sub-N-type semiconductor layers; and the m sub-N-type semiconductor layers are in one-to-one correspondence with the m sub-N-type electrodes.

[0020] In the multi-wavelength light-emitting diode chip described above, optionally, the partial isolation structure extends into the P-type semiconductor layer.

[0021] In the multi-wavelength light-emitting diode chip described above, optionally, the P-type electrode includes m sub-P-type electrodes that are separate from each other; the P-type semiconductor layer includes m sub-P-type semiconductor layers that are separate from each other; the m sub-pixels, which are close to one side of the P-type semiconductor layer, are in one-to-one correspondence with the m sub-P-type semiconductor layers and are in conductive contact with the m sub-P-type semiconductor layers; and the m sub-P-type semiconductor layers are in one-to-one correspondence with the m sub-P-type electrodes.

[0022] In the multi-wavelength light-emitting diode chip described above, optionally, the partial isolation structure extends into the N-type semiconductor layer.

[0023] In the multi-wavelength light-emitting diode chip described above, optionally, the light-adjusting layer includes a plurality of sub-light-adjusting layers, and the plurality of sub-light-adjusting layers are arranged in one-to-one correspondence with the other sub-pixels, except for the sub-pixel with the maximum light-emitting wavelength.

[0024] In the multi-wavelength light-emitting diode chip described above, optionally, the m sub-pixels form x pixel subgroups; and x is a positive integer greater than or equal to 1.

[0025] In the multi-wavelength light-emitting diode chip described above, optionally, when x is greater than 1, the x pixel subgroups are arranged in an array along a direction perpendicular to the N-type electrode and the P-type electrode.

[0026] In the multi-wavelength light-emitting diode chip described above, optionally, one pixel subgroup includes at least two sub-pixels; and in the same pixel subgroup, at least some of the sub-pixels have different light-emitting wavelengths.

[0027] In the multi-wavelength light-emitting diode chip described above, optionally, the number of light-emitting wavelengths of the multi-wavelength light-emitting diode chip is 2.

[0028] In the multi-wavelength light emitting diode chip, optionally, the light emitting wavelengths of the sub-pixels in the same pixel sub-group are all different; the number of the sub-pixels in the pixel sub-group is n, and is equal to 2, and the number of the sub-pixels of the multi-wavelength light emitting diode chip is 2x.

[0029] In the multi-wavelength light emitting diode chip, optionally, the light emitting wavelengths of the sub-pixels in the same pixel sub-group are all different; the number of the sub-pixels in the pixel sub-group is n, and is equal to 2, and the number of the sub-pixels of the multi-wavelength light emitting diode chip is 2x.

[0030] In the multi-wavelength light emitting diode chip, optionally, the number of the light emitting wavelengths of the multi-wavelength light emitting diode chip is greater than or equal to 3.

[0031] In the multi-wavelength light emitting diode chip, optionally, the light emitting wavelengths of the sub-pixels in the same pixel sub-group are all different; the number of the sub-pixels in the pixel sub-group is n; n sub-pixels form a pixel unit, and the number of the sub-pixels of the multi-wavelength light emitting diode chip is nx.

[0032] Or, n+1 sub-pixels form a pixel unit, and the number of the sub-pixels of the multi-wavelength light emitting diode chip is (n+1)x.

[0033] Or, n+y sub-pixels form a pixel unit, and the number of the sub-pixels of the multi-wavelength light emitting diode chip is (n+y)x; wherein, y is a positive integer greater than or equal to 2.

[0034] Or, at least part of the pixel units share 2 sub-pixels, and the number of the sub-pixels of the multi-wavelength light emitting diode chip is (2n-2)x.

[0035] In the multi-wavelength light emitting diode chip, optionally, the following definitions at least meet one of the following:

[0036] The size of the multi-wavelength light emitting diode chip is greater than or equal to 50 microns;

[0037] The shape of the multi-wavelength light emitting diode chip is any one of rectangle, square, circle, ellipse, triangle, rhombus, parallelogram and polygon with more than four sides;

[0038] The size of the sub-pixel ranges from 0.001 microns to 200 microns;

[0039] The shape of the sub-pixel is any one of rectangle, square, circle, ellipse, triangle, rhombus, parallelogram and polygon with more than four sides;

[0040] The shapes of different sub-pixels are the same or different;

[0041] The sizes of the different sub-pixels are equal or unequal.

[0042] In the multi-wavelength light emitting diode chip, optionally, the multi-wavelength light emitting diode chip further comprises a buffer layer, a current spreading layer, a reflective layer and a first insulating layer.

[0043] The buffer layer and the N-type semiconductor layer are stacked, the light emitting layer is arranged on a side of the N-type semiconductor layer away from the buffer layer, and the P-type semiconductor layer is arranged on a side of the light emitting layer away from the buffer layer.

[0044] The current spreading layer is in contact with a side of the P-type semiconductor layer away from the buffer layer, the N-type electrode is in contact with the N-type semiconductor layer, and the P-type electrode is in contact with the P-type semiconductor layer and the current spreading layer.

[0045] The first insulating layer is arranged on a side of the current spreading layer away from the buffer layer.

[0046] The reflective layer is arranged on a side of the buffer layer away from the light emitting layer, or the reflective layer is arranged on a side of the first insulating layer away from the buffer layer, and a second insulating layer is further arranged on a side of the reflective layer away from the buffer layer.

[0047] In the multi-wavelength light emitting diode chip, optionally, the multi-wavelength light emitting diode chip further comprises a substrate, and the substrate is arranged on a side of the buffer layer away from the light emitting layer.

[0048] When the reflective layer is arranged on a side of the buffer layer away from the light emitting layer, the reflective layer is arranged on a side of the substrate away from the buffer layer.

[0049] In the multi-wavelength light emitting diode chip, optionally, the multi-wavelength light emitting diode chip further comprises a bonding substrate, a bonding layer and a reflective layer.

[0050] The bonding substrate and the bonding layer are sequentially arranged on the P-type electrode, the P-type semiconductor layer is arranged on a side of the bonding layer away from the bonding substrate and in contact with the bonding layer, the light emitting layer is arranged on a side of the P-type semiconductor layer away from the bonding substrate, the N-type semiconductor layer is arranged on a side of the light emitting layer away from the bonding substrate, the N-type electrode is in contact with a side of the N-type semiconductor layer away from the bonding substrate, and the reflective layer is arranged on a side of the P-type semiconductor layer close to the bonding substrate.

[0051] In the multi-wavelength light emitting diode chip, optionally, the N light emitting layers comprise:

[0052] The red light emitting layer, the green light emitting layer and the blue light emitting layer are stacked between the N-type semiconductor layer and the P-type semiconductor layer.

[0053] In a second aspect, the embodiments of the present application provide a multi-wavelength light emitting diode chip group comprising a plurality of multi-wavelength light emitting diode chips, and the plurality of multi-wavelength light emitting diode chips are arranged in an array.

[0054] The two adjacent multi-wavelength light emitting diode chips include a first multi-wavelength light emitting diode chip and a second multi-wavelength light emitting diode chip, and part of the sub-pixels of the first multi-wavelength light emitting diode chip and part of the sub-pixels of the second multi-wavelength light emitting diode chip jointly constitute a pixel unit.

[0055] In the multi-wavelength light emitting diode chip set, optionally, the two sub-pixels of the first multi-wavelength light emitting diode chip and the one sub-pixel of the second multi-wavelength light emitting diode chip have different light emitting wavelengths.

[0056] In the multi-wavelength light emitting diode chip set, optionally, the two sub-pixels of the first multi-wavelength light emitting diode chip and the one sub-pixel of the second multi-wavelength light emitting diode chip have different light emitting wavelengths.

[0057] In the multi-wavelength light emitting diode chip set, optionally, the two sub-pixels of the first multi-wavelength light emitting diode chip and the one sub-pixel of the second multi-wavelength light emitting diode chip have different light emitting wavelengths.

[0058] In the multi-wavelength light emitting diode chip set, optionally, in the at least two sub-pixels of the first multi-wavelength light emitting diode chip and the at least two sub-pixels of the second multi-wavelength light emitting diode chip, the light emitting wavelengths of part of the sub-pixels are the same;

[0059] and the at least two sub-pixels of the first multi-wavelength light emitting diode chip and the at least two sub-pixels of the second multi-wavelength light emitting diode chip jointly constitute a pixel unit.

[0060] In the multi-wavelength light emitting diode chip set, optionally, the first multi-wavelength light emitting diode chip and the second multi-wavelength light emitting diode chip are both shaped, the first multi-wavelength light emitting diode chip has a convex region, and the second multi-wavelength light emitting diode chip has a concave region;

[0061] The convex region and the concave region are shaped to match and fit each other.

[0062] In the multi-wavelength light emitting diode chip set, optionally, a third multi-wavelength light emitting diode chip is further included, and the first multi-wavelength light emitting diode chip, the second multi-wavelength light emitting diode chip and the third multi-wavelength light emitting diode chip are arranged in sequence and adjacent to each other;

[0063] The first sub-pixel of the first multi-wavelength light-emitting diode chip, the second sub-pixel of the first multi-wavelength light-emitting diode chip, and the first sub-pixel of the second multi-wavelength light-emitting diode chip have different light-emitting wavelengths and jointly form a first pixel unit; the second sub-pixel of the second light-emitting diode chip, the first sub-pixel of the third multi-wavelength light-emitting diode chip, and the second sub-pixel of the third multi-wavelength light-emitting diode chip have different light-emitting wavelengths and jointly form a second pixel unit.

[0064] The first multi-wavelength light-emitting diode chip, the second multi-wavelength light-emitting diode chip, and the third multi-wavelength light-emitting diode chip jointly form a chip group; and a plurality of multi-wavelength light-emitting diode chips form a plurality of chip groups arranged in an array.

[0065] In the multi-wavelength light-emitting diode chip group, optionally, a plurality of multi-wavelength light-emitting diode chips form a plurality of chip groups arranged in an array and a plurality of pixel units arranged in an array; the spacing between adjacent sub-pixels in the same multi-wavelength light-emitting diode chip is d1; the spacing between adjacent chip groups is d2; the spacing between adjacent pixel units is d3; and the spacing between adjacent multi-wavelength light-emitting diode chips is d4.

[0066] When the pixel unit includes an odd number of sub-pixels, d1, d2, d3, and d4 are all equal.

[0067] When the pixel unit includes an even number of sub-pixels, d1, d2, d3, and d4 are all equal, or d1, d2, d3, and d4 are all different from each other.

[0068] In a third aspect, an embodiment of the present application provides a display module, which includes a driving backboard and a multi-wavelength light-emitting diode chip group; the multi-wavelength light-emitting diode chip group is arranged on the driving backboard and is electrically connected to the driving backboard.

[0069] In the display module, optionally, the multi-wavelength light-emitting diode chip group includes a plurality of multi-wavelength light-emitting diode chip groups.

[0070] The plurality of multi-wavelength light-emitting diode chip groups are arranged in an array on the driving backboard.

[0071] Alternatively, the driving backboard includes a driving substrate and a plurality of driving units; one driving unit is electrically connected to one multi-wavelength light-emitting diode chip group; and the plurality of driving units are all electrically connected to the driving substrate.

[0072] In a fourth aspect, an embodiment of the present application provides a light-emitting device, which includes:

[0073] The multi-wavelength light-emitting diode chip described above.

[0074] at least one fluorescent layer arranged on the surface of the light emitting side of the multi-wavelength light emitting diode chip, or at least one quantum dot color conversion layer arranged on the surface of the light emitting side of the multi-wavelength light emitting diode chip, for converting at least part of the light of at least one color emitted by the multi-wavelength light emitting diode chip into light of another color or multiple colors.

[0075] The multi-wavelength light emitting diode chip and the chip set and the display module provided by the embodiments of the present application can stack N light emitting layers between the N-type electrode and the P-type electrode, electrically connect the N-type electrode and the P-type electrode, and set the sum of the thicknesses of the N light emitting layers to be less than the hole diffusion length of the P-type electrode, so that the electrons provided by the N-type electrode and the holes provided by the P-type electrode recombine in each light emitting layer and excite the light emitting material in the light emitting layer to emit light. The light emitting mechanism of each light emitting layer is electroluminescence, which can improve the photoelectric conversion efficiency of the light emitting layer and reduce the light loss of the emitted light. Moreover, the preparation difficulty of the multi-wavelength light emitting diode chip can be effectively reduced, and the number and difficulty of mass transfer can be reduced, so that the problems of preparation difficulty, yield and cost in the process represented by mass transfer in the ultra-high-density pixel display product can be overcome.

[0076] By adjusting the voltage value or the current value of the electric field between the N-type electrode and the P-type electrode, the light emitting layer can emit light of different numbers of wavelengths. In this way, the multi-wavelength light emitting diode chip as a single-chip multi-color chip only needs to be epitaxially grown once and does not need a tunnel junction, so the preparation process is simple, the preparation difficulty is low, the photoelectric conversion efficiency is high, and the light loss is low. At the same time, for the emitted light of a longer wavelength, a lower voltage can be used, which is more energy-saving. Moreover, when the multi-wavelength light emitting diode chip is in an independent driving mode, the sub-pixel corresponding to the longer wavelength does not need to be additionally provided with a dimming layer, which not only can reduce the cost but also can improve the light efficiency. When the multi-wavelength light emitting diode chip is in a common driving mode, different wavelengths of light can be obtained by adjusting the voltage value or the current value, and the number of wavelengths of the emitted light can be flexibly adjusted. Therefore, the driving mode is simple, and the packaging structure is simple.

[0077] The size of the multi-wavelength light emitting diode chip and the chip set in the embodiments of the present application is flexibly adjustable, which effectively widens the application scenarios and application boundaries of the light emitting diode, the chip set and the display module.

[0078] The multi-wavelength light emitting diode chip is applied to a light emitting device, which can effectively improve the light emitting effect and provide light of diversified wavelengths.

[0079] The structure of the present application and other inventive purposes and beneficial effects will be more apparent and easier to understand through the description of the preferred embodiments in conjunction with the accompanying drawings. BRIEF DESCRIPTION OF DRAWINGS

[0080] In order to more clearly illustrate the technical solutions in the embodiments of the present application or the prior art, the accompanying drawings needed to be used in the embodiments or prior art description will be briefly introduced as follows. Obviously, the accompanying drawings in the following description are some embodiments of the present application, and for those skilled in the art, other drawings can also be obtained based on these drawings without creative labor.

[0081] Figure 1 A cross-sectional view of a multi-wavelength light emitting diode chip provided by an embodiment of the present application;

[0082] Figure 2 A top view of a multi-wavelength light emitting diode chip with a shared N-type electrode provided by an embodiment of the present application;

[0083] Figure 3 A cross-sectional view of a first multi-wavelength light emitting diode chip with a shared N-type electrode provided by an embodiment of the present application;

[0084] Figure 4 A cross-sectional view of a second multi-wavelength light emitting diode chip with a shared N-type electrode provided by an embodiment of the present application;

[0085] Figure 5 A cross-sectional view of a third multi-wavelength light emitting diode chip with a shared N-type electrode provided by an embodiment of the present application;

[0086] Figure 6 A top view of a multi-wavelength light emitting diode chip with a shared N-type electrode and an added isolation material provided by an embodiment of the present application;

[0087] Figure 7 A cross-sectional view of a first multi-wavelength light emitting diode chip with a shared N-type electrode and an added isolation material provided by an embodiment of the present application;

[0088] Figure 8 A cross-sectional view of a second multi-wavelength light emitting diode chip with a shared N-type electrode and an added isolation material provided by an embodiment of the present application;

[0089] Figure 9 A cross-sectional view of a fourth multi-wavelength light emitting diode chip with a shared N-type electrode provided by an embodiment of the present application;

[0090] Figure 10 A cross-sectional view of a fifth multi-wavelength light emitting diode chip with a shared N-type electrode provided by an embodiment of the present application;

[0091] Figure 11 A top view of a multi-wavelength light emitting diode chip with a shared P-type electrode provided by an embodiment of the present application;

[0092] Figure 12A cross-sectional view of a multi-wavelength light emitting diode chip with a common P-type electrode according to an embodiment of the present application;

[0093] Figure 13 A cross-sectional view of a multi-wavelength light emitting diode chip with a common P-type electrode according to an embodiment of the present application;

[0094] Figure 14 A cross-sectional view of a multi-wavelength light emitting diode chip with a common P-type electrode according to an embodiment of the present application;

[0095] Figure 15 A top view of a multi-wavelength light emitting diode chip with a common P-type electrode and isolation material according to an embodiment of the present application;

[0096] Figure 16 A cross-sectional view of a multi-wavelength light emitting diode chip with a common P-type electrode and isolation material according to an embodiment of the present application;

[0097] Figure 17 A cross-sectional view of a multi-wavelength light emitting diode chip with a common P-type electrode and isolation material according to an embodiment of the present application;

[0098] Figure 18 A cross-sectional view of a multi-wavelength light emitting diode chip with a common P-type electrode according to an embodiment of the present application;

[0099] Figure 19 A schematic diagram of a light emitting principle of a multi-wavelength light emitting diode chip with a common N-type electrode according to an embodiment of the present application;

[0100] Figure 20 A top view of a multi-wavelength light emitting diode chip with two sub-pixels according to an embodiment of the present application;

[0101] Figure 21 A top view of a multi-wavelength light emitting diode chip with two sub-pixels according to an embodiment of the present application;

[0102] Figure 22 A top view of a multi-wavelength light emitting diode chip with two sub-pixels according to an embodiment of the present application;

[0103] Figure 23 A top view of a multi-wavelength light emitting diode chip with two sub-pixels according to an embodiment of the present application;

[0104] Figure 24 A top view of a multi-wavelength light emitting diode chip with two sub-pixels according to an embodiment of the present application;

[0105] Figure 25A top view of a fourth multi-wavelength light emitting diode chip with four sub-pixels provided by an embodiment of the present application;

[0106] Figure 26 A top view of a first multi-wavelength light emitting diode chip with three sub-pixels provided by an embodiment of the present application;

[0107] Figure 27 A top view of a second multi-wavelength light emitting diode chip with three sub-pixels provided by an embodiment of the present application;

[0108] Figure 28 A top view of a first multi-wavelength light emitting diode chip with four sub-pixels provided by an embodiment of the present application;

[0109] Figure 29 A top view of a second multi-wavelength light emitting diode chip with four sub-pixels provided by an embodiment of the present application;

[0110] Figure 30 A top view of a third multi-wavelength light emitting diode chip with four sub-pixels provided by an embodiment of the present application;

[0111] Figure 31 A top view of a fourth multi-wavelength light emitting diode chip with four sub-pixels provided by an embodiment of the present application;

[0112] Figure 32 A top view of a first multi-wavelength light emitting diode chip with four sub-pixels sharing part of N-type electrodes provided by an embodiment of the present application;

[0113] Figure 33 A top view of a first multi-wavelength light emitting diode chip with four sub-pixels sharing all N-type electrodes provided by an embodiment of the present application;

[0114] Figure 34 A top view of a second multi-wavelength light emitting diode chip with four sub-pixels sharing part of N-type electrodes provided by an embodiment of the present application;

[0115] Figure 35 A top view of a second multi-wavelength light emitting diode chip with four sub-pixels sharing all N-type electrodes provided by an embodiment of the present application;

[0116] Figure 36 A top view of a pixel unit formed by a 2*2 type multi-wavelength light emitting diode chip provided by an embodiment of the present application;

[0117] Figure 37 A top view of a pixel unit formed by a 2*3 type multi-wavelength light emitting diode chip provided by an embodiment of the present application;

[0118] Figure 38A top view of a pixel unit formed by a 2*5 type multi-wavelength light emitting diode chip provided for an embodiment of the present application;

[0119] Figure 39 A top view of a pixel unit formed by a 2*8 type multi-wavelength light emitting diode chip provided for an embodiment of the present application;

[0120] Figure 40 A top view of a first multi-wavelength light emitting diode chip containing three sub-pixels provided for an embodiment of the present application;

[0121] Figure 41 A top view of a second multi-wavelength light emitting diode chip containing three sub-pixels provided for an embodiment of the present application;

[0122] Figure 42 A top view of a third multi-wavelength light emitting diode chip containing three sub-pixels provided for an embodiment of the present application;

[0123] Figure 43 A top view of a fourth multi-wavelength light emitting diode chip containing three sub-pixels provided for an embodiment of the present application;

[0124] Figure 44 A top view of a fifth multi-wavelength light emitting diode chip containing three sub-pixels provided for an embodiment of the present application;

[0125] Figure 45 A top view of a sixth multi-wavelength light emitting diode chip containing three sub-pixels provided for an embodiment of the present application;

[0126] Figure 46 A top view of a seventh multi-wavelength light emitting diode chip containing three sub-pixels provided for an embodiment of the present application;

[0127] Figure 47 A top view of an eighth multi-wavelength light emitting diode chip containing three sub-pixels provided for an embodiment of the present application;

[0128] Figure 48 A top view of a ninth multi-wavelength light emitting diode chip containing three sub-pixels provided for an embodiment of the present application;

[0129] Figure 49 A top view of a tenth multi-wavelength light emitting diode chip containing three sub-pixels provided for an embodiment of the present application;

[0130] Figure 50 A top view of an eleventh multi-wavelength light emitting diode chip containing three sub-pixels provided for an embodiment of the present application;

[0131] Figure 51 A top view of a twelfth multi-wavelength light emitting diode chip containing three sub-pixels provided for an embodiment of the present application;

[0132] Figure 52 a top view of a twelfth multi-wavelength light emitting diode chip with three sub-pixels provided by an embodiment of the present application;

[0133] Figure 53 a top view of a thirteenth multi-wavelength light emitting diode chip with three sub-pixels provided by an embodiment of the present application;

[0134] Figure 54 a top view of a fourteenth multi-wavelength light emitting diode chip with three sub-pixels provided by an embodiment of the present application;

[0135] Figure 55 a top view of a fifteenth multi-wavelength light emitting diode chip with three sub-pixels provided by an embodiment of the present application;

[0136] Figure 56 a top view of a sixteenth multi-wavelength light emitting diode chip with three sub-pixels provided by an embodiment of the present application;

[0137] Figure 57 a top view of a seventeenth multi-wavelength light emitting diode chip with three sub-pixels provided by an embodiment of the present application;

[0138] Figure 58 a top view of an eighteenth multi-wavelength light emitting diode chip with three sub-pixels provided by an embodiment of the present application;

[0139] Figure 59 a top view of a first multi-wavelength light emitting diode chip with four sub-pixels provided by an embodiment of the present application;

[0140] Figure 60 a top view of a second multi-wavelength light emitting diode chip with four sub-pixels provided by an embodiment of the present application;

[0141] Figure 61 a top view of a third multi-wavelength light emitting diode chip with four sub-pixels provided by an embodiment of the present application;

[0142] Figure 62 a top view of a fourth multi-wavelength light emitting diode chip with four sub-pixels provided by an embodiment of the present application;

[0143] Figure 63 a top view of a fifth multi-wavelength light emitting diode chip with five sub-pixels provided by an embodiment of the present application;

[0144] Figure 64 a top view of a sixth multi-wavelength light emitting diode chip with five sub-pixels provided by an embodiment of the present application;

[0145] Figure 65A top view of a multi-wavelength light emitting diode chip containing eight sub-pixels provided for an embodiment of the present application;

[0146] Figure 66 A top view of a multi-wavelength light emitting diode chip containing 5*x sub-pixels provided for an embodiment of the present application;

[0147] Figure 67 A top view of a multi-wavelength light emitting diode chip with first pixel unit sharing sub-pixels provided for an embodiment of the present application;

[0148] Figure 68 A top view of a multi-wavelength light emitting diode chip with second pixel unit sharing sub-pixels provided for an embodiment of the present application;

[0149] Figure 69 A top view of a multi-wavelength light emitting diode chip with third pixel unit sharing sub-pixels provided for an embodiment of the present application;

[0150] Figure 70 A top view of a multi-wavelength light emitting diode chip with fourth pixel unit sharing sub-pixels provided for an embodiment of the present application;

[0151] Figure 71 A top view of a multi-wavelength light emitting diode chip with fifth pixel unit sharing sub-pixels provided for an embodiment of the present application;

[0152] Figure 72 A top view of a multi-wavelength light emitting diode chip with first pixel unit sharing two sub-pixels provided for an embodiment of the present application;

[0153] Figure 73 A top view of a multi-wavelength light emitting diode chip with second pixel unit sharing two sub-pixels provided for an embodiment of the present application;

[0154] Figure 74 A top view of a multi-wavelength light emitting diode chip with third pixel unit sharing two sub-pixels provided for an embodiment of the present application;

[0155] Figure 75 A top view of a multi-wavelength light emitting diode chip before the first shaped sub-pixel is spliced provided for an embodiment of the present application;

[0156] Figure 76 A top view of a multi-wavelength light emitting diode chip after the first shaped sub-pixel is spliced provided for an embodiment of the present application;

[0157] Figure 77 A top view of a multi-wavelength light emitting diode chip after the second shaped sub-pixel is spliced provided for an embodiment of the present application;

[0158] Figure 78A top view of a third multi-wavelength light-emitting diode chip with special-shaped sub-pixels provided by an embodiment of the present application is shown in the figure;

[0159] Figure 79 A top view of a fourth multi-wavelength light-emitting diode chip with special-shaped sub-pixels provided by an embodiment of the present application is shown in the figure;

[0160] Figure 80 A top view of a fifth multi-wavelength light-emitting diode chip with special-shaped sub-pixels provided by an embodiment of the present application is shown in the figure;

[0161] Figure 81 A size diagram of a first multi-wavelength light-emitting diode chip set provided by an embodiment of the present application is shown in the figure;

[0162] Figure 82 A size diagram of a second multi-wavelength light-emitting diode chip set provided by an embodiment of the present application is shown in the figure;

[0163] Figure 83 A size diagram of a third multi-wavelength light-emitting diode chip set provided by an embodiment of the present application is shown in the figure;

[0164] Figure 84 A size diagram of a fourth multi-wavelength light-emitting diode chip set provided by an embodiment of the present application is shown in the figure;

[0165] Figure 85 A size diagram of a fifth multi-wavelength light-emitting diode chip set provided by an embodiment of the present application is shown in the figure;

[0166] Figure 86 A size diagram of a sixth multi-wavelength light-emitting diode chip set provided by an embodiment of the present application is shown in the figure;

[0167] Figure 87 A size diagram of a seventh multi-wavelength light-emitting diode chip set provided by an embodiment of the present application is shown in the figure;

[0168] Figure 88 A size diagram of an eighth multi-wavelength light-emitting diode chip set provided by an embodiment of the present application is shown in the figure;

[0169] Figure 89 An architecture diagram of a first multi-wavelength light-emitting diode chip provided by an embodiment of the present application is shown in the figure;

[0170] Figure 90 An architecture diagram of a second multi-wavelength light-emitting diode chip provided by an embodiment of the present application is shown in the figure;

[0171] Figure 91 An architecture diagram of a third multi-wavelength light-emitting diode chip provided by an embodiment of the present application is shown in the figure;

[0172] Figure 92A fourth multi-wavelength light emitting diode chip architecture schematic diagram provided for an embodiment of the present application;

[0173] Figure 93 A first multi-wavelength light emitting diode chip group top view provided for an embodiment of the present application;

[0174] Figure 94 A second multi-wavelength light emitting diode chip group top view provided for an embodiment of the present application;

[0175] Figure 95 A third multi-wavelength light emitting diode chip group top view provided for an embodiment of the present application;

[0176] Figure 96 A fourth multi-wavelength light emitting diode chip group top view provided for an embodiment of the present application;

[0177] Figure 97 A fifth multi-wavelength light emitting diode chip group top view provided for an embodiment of the present application;

[0178] Figure 98 A sixth multi-wavelength light emitting diode chip group top view provided for an embodiment of the present application;

[0179] Figure 99 A seventh multi-wavelength light emitting diode chip group top view provided for an embodiment of the present application;

[0180] Figure 100 An eighth multi-wavelength light emitting diode chip group top view provided for an embodiment of the present application;

[0181] Figure 101 A ninth multi-wavelength light emitting diode chip group top view provided for an embodiment of the present application;

[0182] Figure 102 A tenth multi-wavelength light emitting diode chip group top view provided for an embodiment of the present application;

[0183] Figure 103 An eleventh multi-wavelength light emitting diode chip group top view provided for an embodiment of the present application;

[0184] Figure 104 A twelfth multi-wavelength light emitting diode chip group top view provided for an embodiment of the present application;

[0185] Figure 105 A thirteenth multi-wavelength light emitting diode chip group top view provided for an embodiment of the present application;

[0186] Figure 106 A fourteenth multi-wavelength light emitting diode chip group top view provided for an embodiment of the present application;

[0187] Figure 107 A top view of a twenty-first multi-wavelength light emitting diode chip set according to an embodiment of the present application;

[0188] Figure 108 A top view of a twenty-second multi-wavelength light emitting diode chip set according to an embodiment of the present application;

[0189] Figure 109 A top view of a twenty-third multi-wavelength light emitting diode chip set according to an embodiment of the present application;

[0190] Figure 110 A top view of a twenty-fourth multi-wavelength light emitting diode chip set according to an embodiment of the present application;

[0191] Figure 111 A top view of a twenty-fifth multi-wavelength light emitting diode chip set according to an embodiment of the present application;

[0192] Figure 112 A top view of a twenty-sixth multi-wavelength light emitting diode chip set according to an embodiment of the present application;

[0193] Figure 113 A top view of a twenty-seventh multi-wavelength light emitting diode chip set according to an embodiment of the present application;

[0194] Figure 114 A top view of a twenty-eighth multi-wavelength light emitting diode chip set according to an embodiment of the present application;

[0195] Figure 115 A top view of a twenty-ninth multi-wavelength light emitting diode chip set according to an embodiment of the present application;

[0196] Figure 116 A top view of a thirtieth multi-wavelength light emitting diode chip set according to an embodiment of the present application;

[0197] Figure 117 A top view of a thirty-first multi-wavelength light emitting diode chip set according to an embodiment of the present application;

[0198] Figure 118 A top view of a thirty-second multi-wavelength light emitting diode chip set according to an embodiment of the present application;

[0199] Figure 119 A top view of a thirty-third multi-wavelength light emitting diode chip set according to an embodiment of the present application;

[0200] Figure 120 A top view of a thirty-fourth multi-wavelength light emitting diode chip set according to an embodiment of the present application;

[0201] Figure 121A principle schematic diagram of a multi-wavelength light-emitting diode chip for adjusting voltage or current values provided by an embodiment of the present application;

[0202] Figure 122 A principle schematic diagram of a multi-wavelength light-emitting diode chip for adjusting voltage or current values provided by an embodiment of the present application;

[0203] Figure 123 A cross-sectional view of a first display module provided by an embodiment of the present application;

[0204] Figure 124 A cross-sectional view of a second display module provided by an embodiment of the present application.

[0205] Legend of reference signs:

[0206] 100, substrate; 101, buffer layer; 102, N-type electrode; 103, N-type semiconductor layer; 104, P-type electrode; 105, P-type semiconductor layer; 106, current spreading layer; 107, reflective layer; 108, first insulating layer; 109, second insulating layer; 110, bonding substrate; 111, bonding layer; 112, color conversion layer; 113, protective layer; 114, first light modulation layer; 115, second light modulation layer; 116, isolation material; 117, light-emitting layer; 117-1, first light-emitting layer; 117-2, second light-emitting layer; 117-N, Nth light-emitting layer; 200, driving backplane; 201, driving substrate; 202, driving unit. DETAILED DESCRIPTION

[0207] In an LED display product, three single-chip single-color single-pixel chips are usually used to form a pixel unit. In an ultra-high-density display product represented by micro LED and mini LED, the size of a single chip is small, and the number of overall chips constituting the display product is large. In the process of the display product, the micro LED or mini LED chip needs to be grown on a wafer, and then transferred to a specific substrate through a mass transfer technology to complete the bonding assembly. In the mass transfer process, due to the small size and large number of chips, the transfer operation is difficult, the operation times are numerous, and the operation alignment on the substrate is high. Therefore, the process of the micro LED and mini LED display product is difficult, the yield is low, the production cycle is long, and the cost is high.

[0208] In the related art, in an LED display product, several chips are packaged together through a MIP (Micro LED in Package) packaging process to form an integrated chip group that can emit multiple wavelengths. The traditional MIP packaging process is suitable for LED display products with a pixel size greater than 0.3 mm. In the MIP packaging process, the size of the single-core single-color sub-pixel chip used needs to be relatively large, i.e., the size of the sub-pixel is relatively large, due to the limitation of the existing mass transfer technology capability. A single chip group is usually a RGB pixel unit, and the number of chips and chip groups used in the application end is relatively large.

[0209] In the related art, a single-core multi-color chip is also used to form a pixel unit. In this structure, multiple epitaxy technologies or multiple PN junctions and tunnel junctions are usually used for preparation, or a filter layer is added after multiple light-emitting layers are stacked.

[0210] In the chip structure prepared by the multiple epitaxy technologies, there is a problem of defect accumulation, which affects the light-emitting efficiency of the multi-wavelength light-emitting diode chip, and the process is complex and difficult to mass-produce. The preparation method of multiple PN junctions and tunnel junctions has a high process difficulty and increases the preparation cost, and both of them are difficult to mass-produce. The single-core multi-color chip obtained by stacking multiple light-emitting layers and adding a filter layer has a low light efficiency because the carriers are used by multiple light-emitting layers, and the photoelectric conversion efficiency is further reduced after the filter layer, resulting in high light loss. In particular, the light efficiency of long-wavelength such as red light is extremely low, so it cannot be normally applied in products. In this structure, all the chips of different wavelengths need to be driven by a relatively large voltage to ensure the light-emitting effect, and the chip driving power consumption is high, and the energy-saving effect is poor.

[0211] The multi-wavelength light-emitting diode chip and the chip group and the display module provided by the embodiments of the present application have the following advantages. N light-emitting layers are stacked between an N-type electrode and a P-type electrode, are electrically connected to the N-type electrode and the P-type electrode, and the sum of the thicknesses of the N light-emitting layers is less than the hole diffusion length of the P-type electrode, so that the holes provided by the P-type electrode can enter the light-emitting layers. The multi-wavelength light-emitting diode chip has only one P-type semiconductor layer and one N-type semiconductor layer, and the multiple light-emitting layers are stacked between the P-type semiconductor layer and the N-type semiconductor layer, which only needs single epitaxy and does not need a tunnel junction, so the structure and process are simple, the preparation difficulty is low, and the multi-wavelength light-emitting diode chip is a single-core multi-color chip, which can reduce the number of transfers and the transfer difficulty in mass transfer, so as to overcome the problems of preparation difficulty, yield, and cost in the process of ultra-high-density pixel display products represented by mass transfer.

[0212] Compared with the related art adopting the single-core multi-color chip mode, the application embodiment can make the light-emitting layer emit different numbers of wavelengths of light by adjusting the voltage value or the current value of the electric field between the N-type electrode and the P-type electrode. The multi-wavelength light-emitting diode chip as a single-core multi-color chip only needs one epitaxy and does not need a tunnel junction, and thus has simple preparation process, low preparation difficulty, high photoelectric conversion efficiency, and low light loss. Meanwhile, for the outgoing light of a longer wavelength, a lower voltage can be used, and thus the power consumption is lower and the energy is more saved. Moreover, when the multi-wavelength light-emitting diode chip is in the independent driving mode, the sub-pixel corresponding to the longer wavelength does not need to add a dimming layer, which not only can reduce the cost but also can improve the light efficiency; when the multi-wavelength light-emitting diode chip is in the common driving mode, different wavelengths of light can be obtained by adjusting the voltage value or the current value, and the number of wavelengths of light can be flexibly adjusted, and thus a plurality of different chips do not need to be matched with a complex driving circuit, and thus the driving mode is simple and the packaging structure is simple.

[0213] The multi-wavelength light-emitting diode chip and the chip group in the application embodiment are flexibly adjustable in size, and effectively broaden the application scenarios and application boundaries of the light-emitting diode and the chip group and the display module. In this way, the number of wavelengths of light of the multi-wavelength light-emitting diode chip is flexibly adjusted to form a multi-wavelength light-emitting diode chip and an RGB full-color chip group flexibly adjustable in size, which effectively broaden the application scenarios and application boundaries of the light-emitting diode and the chip group and the display module.

[0214] The multi-wavelength light-emitting diode chip with a single-core multi-color multi-sub-pixel in the application, and the multi-wavelength light-emitting diode chip group formed thereby, can ensure that the size of the multi-wavelength light-emitting diode chip is flexibly adjustable under the condition of the same light-emitting area and the same pixel density (Pixels Per Inch, PPI) and a small sub-pixel size, and the number of the multi-wavelength light-emitting diode chip is greatly reduced, thereby overcoming the problems of great preparation process difficulty, low product yield, and high preparation cost, and helping to promote the mass production of miniLED and micro LED as soon as possible.

[0215] When the multi-wavelength light-emitting diode chip with a single-core multi-color multi-sub-pixel in the application forms a full-color integrated chip group (for example, three 2*n combination chips form one chip group), n*2 pixel units can be obtained, and when combined with a backboard, the chip group used is 1 / 2n of a traditional MIP package, which greatly reduces the preparation time, reduces the process and raw material cost, and greatly improves the yield. Further, the pixel size applicable to the full-color integrated package in the application can be flexibly adjusted, and can be much smaller than the pixel size applicable to the traditional MIP process.

[0216] In order to make the purpose, technical scheme and advantages of the present application clearer, the technical scheme in the embodiments of the present application will be described in more detail below with reference to the drawings in the preferred embodiments of the present application. In the drawings, the same or similar notations represent the same or similar parts or parts having the same or similar functions throughout. The described embodiments are part of the embodiments of the present application, not all of the embodiments. The embodiments described below by reference to the drawings are exemplary and are intended to explain the present application, and cannot be understood as limiting the present application. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without creative labor fall within the scope of protection of the present application. The embodiments of the present application will be described in detail below with reference to the drawings.

[0217] In the present application, some nouns can be understood as the following meaning explanation:

[0218] Sub pixel (SP): a single blue pixel, or a single green pixel, or a single red pixel is called a sub pixel. In the present patent, a sub pixel can also be a single arbitrary wavelength.

[0219] Pixel sub group (PSG): a plurality of sub pixels form a combination.

[0220] Pixel unit (PU): a unit including blue, green and red sub pixels.

[0221] Single-core single-color single-sub-pixel chip: a single multi-wavelength light-emitting diode chip can only emit light of one wavelength, and only contains one sub-pixel, such as one blue sub-pixel, or one green sub-pixel, or one red sub-pixel.

[0222] Single-core single-color multi-sub-pixel chip: a single chip can only emit light of one wavelength, but contains more than or equal to two sub-pixels, such as two red sub-pixels, three red sub-pixels, or more red sub-pixels.

[0223] Single-core dual-color multi-sub-pixel chip: a single chip can emit light of two different wavelengths, and contains more than or equal to two sub-pixels, such as one red sub-pixel + one green sub-pixel, two red sub-pixels + two green sub-pixels, multiple blue sub-pixels + multiple red sub-pixels, multiple green sub-pixels + multiple blue sub-pixels, or multiple green sub-pixels + multiple red sub-pixels.

[0224] Multi-wavelength light-emitting diode chip (Chip, C): a kind of solid-state semiconductor device with a light-emitting layer between P-type electrode and N-type electrode.

[0225] Multi-wavelength light-emitting diode chip group (Chip group, CG for short): composed of two or more single-core double (single) color multi-pixel chip, containing one or more pixel units.

[0226] Micro display module (Display mini block, DMB for short): multi-wavelength light-emitting diode chip group and driving backplane electrically connected to form a display device.

[0227] Referring to Figure 1 As shown in the first aspect, the multi-wavelength light-emitting diode chip provided by the embodiments of the present application comprises: an N-type electrode (not shown in the figure), a P-type electrode (not shown in the figure) and N light-emitting layers. The N light-emitting layers are stacked between the N-type electrode and the P-type electrode and are electrically conductive with the N-type electrode and the P-type electrode respectively; the sum of the thicknesses of the N light-emitting layers is less than the hole diffusion length of the P-type electrode. The number of light-emitting wavelengths of the N light-emitting layers is n; N and n are both positive integers greater than or equal to 2.

[0228] An electric field is formed between the N-type electrode and the P-type electrode; the multi-wavelength light-emitting diode chip is configured to emit light of different number of wavelengths according to different voltage values or current values of the electric field, and the number of wavelengths is greater than or equal to 1.

[0229] It should be noted that an electric field is formed between the N-type electrode and the P-type electrode, and the light-emitting layer is arranged between the N-type electrode and the P-type electrode, which can be understood as the light-emitting layer being located in the electric field. In the thickness direction of the chip, all the light-emitting layers or part of the light-emitting layers are located between the N-type electrode and the P-type electrode. The light-emitting layer is electrically conductive with the N-type electrode and the P-type electrode respectively, which can mean that the light-emitting layer is in contact with the N-type electrode and the P-type electrode for conduction.

[0230] The multi-wavelength light-emitting diode chip further comprises an N-type semiconductor layer stacked on the side of the light-emitting layer close to the N-type electrode and connected with the N-type electrode; the light-emitting layer is electrically conductive with the N-type electrode through the N-type semiconductor layer.

[0231] The multi-wavelength light-emitting diode chip further comprises a P-type semiconductor layer stacked on the side of the light-emitting layer close to the P-type electrode and connected with the P-type electrode; the light-emitting layer is electrically conductive with the P-type electrode through the P-type semiconductor layer. In the above multi-wavelength light-emitting diode chip, optionally, it further comprises a P-type semiconductor layer stacked on the side of the light-emitting layer close to the P-type electrode and connected with the P-type electrode; the light-emitting layer is electrically conductive with the P-type electrode through the P-type semiconductor layer.

[0232] Based on the sum of thicknesses of the N light-emitting layers, the hole diffusion length is less than the P-type electrode. When the N-type electrode and the P-type electrode are in an energized state, the P-type electrode excites the P-type semiconductor layer to generate holes, and the holes can only migrate to all the light-emitting layers. The N-type electrode excites the N-type semiconductor layer to generate electrons, and the electrons can also migrate to all the light-emitting layers. Based on this, the electrons and the holes can recombine to emit light in all the light-emitting layers. Therefore, the light-emitting layers in the embodiments of the present application can all realize the electroluminescence light-emitting mechanism.

[0233] Further, compared with the multi-wavelength light-emitting diode chip in the related art, the multi-wavelength light-emitting diode chip in the embodiments of the present application can make the carriers only in a certain light-emitting layer or part of the light-emitting layers in the light-emitting layers by regulating the voltage / current, thereby obtaining higher light efficiency. In particular, the maximum wavelength of the multi-wavelength light-emitting diode chip in the embodiments of the present application does not need to increase the light modulation layer, and the light loss can be further reduced, and the light emission effect is more excellent.

[0234] Figure 1 In the embodiments of the present application, the light-emitting layer includes a first light-emitting layer, a second light-emitting layer, a third light-emitting layer,..., and an Nth light-emitting layer, and is sequentially stacked in the direction from the N-type semiconductor layer to the P-type semiconductor layer.

[0235] In the embodiments of the present application, the light-emitting layer includes a first light-emitting layer, a second light-emitting layer, a third light-emitting layer,..., and an Nth light-emitting layer, and is sequentially stacked in the direction from the N-type semiconductor layer to the P-type semiconductor layer.

[0236] Vf = Eg / 1ev, Eg = 1.24 / λ

[0237] Based on the above formula, the greater the operating voltage of the light-emitting layer, that is, the greater the voltage required for the light-emitting layer to emit light of a corresponding wavelength. Assuming that the operating voltage Vf1, the operating voltage Vf2, the operating voltage Vf3,..., and the operating voltage VfN satisfy the relationship: Vf1 < Vf2 < Vf3 <... < VfN. And, assuming that the wavelengths of the light emitted by the first light-emitting layer to the Nth light-emitting layer are sequentially increased, that is, the wavelength of the light emitted by the Nth light-emitting layer is the largest.

[0238] Therefore, when the operating voltage Vf1 is applied to the light-emitting layer, the Nth light-emitting layer in the light-emitting layer emits light with a wavelength λN through the electroluminescence mechanism.

[0239] When the operating voltage Vf2 is applied to the light-emitting layer, the N-1th light-emitting layer in the light-emitting layer emits light with a wavelength λN-1 through the electroluminescence mechanism, and the Nth light-emitting layer is excited to emit light with λN through the photoluminescence mechanism. At this time, the multi-wavelength light-emitting diode chip can emit mixed light of two wavelengths. It should be noted that at this time, the Nth light-emitting layer may also exist electroluminescence.

[0240] By analogy, the multi-wavelength light-emitting diode chip provided by the embodiment of the present application can adjust the working voltage applied to the light-emitting layer to control the light-emitting layer to emit different amounts of light.

[0241] The N light-emitting layers can emit n amounts of wavelengths, and n can be greater than or equal to 2. That is, at least two light-emitting layers have different light-emitting wavelengths. Based on the difference in the voltage value or the current value of the electric field, part of the light-emitting layers can not emit light. Therefore, when the N-type electrode and the P-type electrode of the multi-wavelength light-emitting diode chip are in a powered-on state, the light-emitting layer at least has light with one wavelength.

[0242] Specifically, the light-emitting layer is configured to: the greater the voltage value or the current value of the electric field, the more the number of wavelengths of light emitted by the light-emitting layer; and the light-emitting layer emits light with one wavelength when the voltage value or the current value of the electric field is the smallest.

[0243] In this way, the number of light-emitting wavelengths of the multi-wavelength light-emitting diode chip can be flexibly adjusted to form a multi-wavelength light-emitting diode chip with flexible and adjustable outgoing light and size, and an RGB full-color chip set, effectively widening the application scenarios and application boundaries of the light-emitting diode and its chip set and display module.

[0244] In the multi-wavelength light-emitting diode chip provided by the embodiment of the present application, the same technical effect can also be achieved by adjusting the applied working current, which will not be described here. In the above light-emitting layer, based on the fact that electrons and holes can reach each light-emitting layer, the stacking order of the first light-emitting layer, the second light-emitting layer, the third light-emitting layer, and the Nth light-emitting layer can not be limited to the above and the illustration, and the stacking positions can be exchanged.

[0245] In the multi-wavelength light-emitting diode chip provided by the embodiment of the present application, the plurality of light-emitting layers form m sub-pixels, m is a positive integer greater than or equal to 2; m is greater than or equal to n; and the m sub-pixels are arranged in an array along a direction perpendicular to the N-type electrode to the P-type electrode.

[0246] Referring to Figure 1 As shown in the figure, the multi-wavelength light-emitting diode chip can form m sub-pixels, and the m sub-pixels can be electrically connected to the same N-type electrode and the same P-type electrode to form a multi-wavelength light-emitting diode chip of a common driving type. In the common driving mode, the multi-wavelength light-emitting diode chip can be used as an atmosphere lamp, and different wavelengths of light can be obtained by adjusting the working voltage or current. Moreover, the multi-wavelength light-emitting diode chip does not need to use multiple different chips to match a complex driving circuit, and the packaging structure is simpler and the driving mode is simple.

[0247] The multi-wavelength light emitting diode chip provided by the embodiment of the present application further comprises a light adjusting layer, which is arranged on the side of the N-type electrode away from the light emitting layer or on the side of the P-type electrode away from the light emitting layer.

[0248] It should be noted that the light adjusting layer is arranged on the light emitting side of the multi-wavelength light emitting diode chip. That is, the light emitting layer can be arranged on the side of the N-type electrode away from the light emitting layer, and the multi-wavelength light emitting diode chip is in a flip-chip structure. The light emitting layer can also be arranged on the side of the P-type electrode away from the light emitting layer, and the multi-wavelength light emitting diode chip is in a normal structure.

[0249] Optionally, the light adjusting layer comprises a filter or a Bragg reflection layer (or a distributed Bragg reflector, DBR for short). Both the filter and the Bragg reflection layer can filter the light passing through the light adjusting layer by wavelength, so as to emit light with different wavelengths. Taking the Bragg reflection layer as an example, it can be formed by alternately stacking two materials of aluminum nitride and gallium nitride, or by alternately stacking two materials of titanium oxide and silicon oxide. Optionally, the thickness of the Bragg reflection layer is 2-6 microns, and in other embodiments, the thickness value can be adjusted as needed, which is not limited in the present application.

[0250] The light adjusting layer comprises a plurality of sub-light adjusting layers, which are respectively opposite to a plurality of sub-pixel positions, so as to filter the light emitted by different sub-pixels, so as to adjust the wavelength of the light emitted by the multi-wavelength light emitting diode chip.

[0251] Referring to Figures 2 to 5 As shown in the figure, the P-type electrode comprises m sub-P-type electrodes which are separate from each other; the P-type semiconductor layer comprises m sub-P-type semiconductor layers which are separate from each other; the m sub-pixels are in contact with the m sub-P-type semiconductor layers one by one on the side close to the P-type semiconductor layer; and the m sub-P-type semiconductor layers are connected with the m sub-P-type electrodes one by one.

[0252] It should be noted that the m sub-P-type electrodes which are separate from each other comprise a first sub-P-type electrode P1, a second sub-P-type electrode P2, a third sub-P-type electrode P3, and an mth sub-P-type electrode Pm. The first sub-P-type electrode P1, the second sub-P-type electrode P2, the third sub-P-type electrode P3, and the mth sub-P-type electrode Pm are respectively electrically conductive with a first sub-pixel SP1, a second sub-pixel SP2, a third sub-pixel SP3, and an mth sub-pixel SPm. The first sub-pixel SP1, the second sub-pixel SP2, the third sub-pixel SP3, and the mth sub-pixel SPm are electrically conductive with the same N-type electrode.

[0253] When the first sub-P-type electrode P1, the second sub-P-type electrode P2, the third sub-P-type electrode P3...the m-th sub-P-type electrode Pm and the N-type electrode are energized, the first sub-pixel SP1, the second sub-pixel SP2, the third sub-pixel SP3...the m-th sub-pixel SPm can be driven independently to emit light of different wavelengths. In this way, a multi-wavelength light-emitting diode chip with independent driving mode can be formed.

[0254] Reference Figure 3 As shown, each sub-pixel can include a first emissive layer, a second emissive layer, a third emissive layer, ..., an Nth emissive layer. (Refer to...) Figure 4 As shown, the first light-emitting layer, the second light-emitting layer, the third light-emitting layer... the Nth light-emitting layer can form a light-emitting layer group. Each sub-pixel can include n light-emitting layer groups that are periodically and repeatedly stacked. For example, it can include 2 groups of stacked light-emitting layer groups, or 3 groups of stacked light-emitting layer groups, or more groups of stacked light-emitting layer groups. In each light-emitting layer group, the stacking order of the first light-emitting layer, the second light-emitting layer, the third light-emitting layer... the Nth light-emitting layer can be the same or different.

[0255] In one possible implementation, the N light-emitting layers include a red light-emitting layer, a green light-emitting layer, and a blue light-emitting layer. The red, green, and blue light-emitting layers are stacked between an N-type semiconductor layer and a P-type semiconductor layer. The stacking order of the red, green, and blue light-emitting layers is not limited. For example, along the direction from the N-type semiconductor layer to the P-type semiconductor layer, the stacking order of the red, green, and blue light-emitting layers can be: red light-emitting layer, green light-emitting layer, and blue light-emitting layer; or red light-emitting layer, blue light-emitting layer, and green light-emitting layer; or blue light-emitting layer, green light-emitting layer, and blue light-emitting layer; or blue light-emitting layer, blue light-emitting layer, and green light-emitting layer; or green light-emitting layer, blue light-emitting layer, and red light-emitting layer; or green light-emitting layer, red light-emitting layer, and blue light-emitting layer.

[0256] Reference Figures 2 to 8 As shown, m sub-pixels are spaced apart along a direction perpendicular to the N-type electrode to the P-type electrode; an isolation structure is provided between adjacent sub-pixels. This isolation structure may include a channel (CN) and an isolation material disposed in the channel.

[0257] In some embodiments, refer to Figures 2 to 5 As shown, the isolation structure can also consist only of channels, meaning the channels may not be filled with isolation material. These channels can spatially isolate adjacent sub-pixels. Combined with... Figures 6 to 8As shown, the channel CN is filled with electrically insulating isolation material 116, such as silicon nitride or silicon oxide, etc. In some embodiments, the electrically insulating isolation material 116 can also have a light blocking effect, such as black photoresist, etc., so that the light mixing between adjacent sub-pixels can be reduced or avoided, and the light emitting effect of the multi-wavelength light emitting diode chip can be improved. In other embodiments, the isolation structure can also be an ion implantation layer, which is formed by an ion implantation process and has an electrically insulating effect and a light blocking effect.

[0258] Referring to Figure 5 and Figure 8 As shown, the isolation structure extends into the N-type semiconductor layer. The isolation structure can also extend into the N-type electrode. In this way, the isolation effect of the isolation structure on adjacent sub-pixels can be improved. It should be noted that when at least part of the isolation structure extends into the N-type semiconductor or the N-type electrode, the isolation structure can only be located in the part of the N-type semiconductor or the N-type electrode close to the light emitting layer, and does not penetrate the N-type semiconductor or the N-type electrode along the thickness direction of the N-type semiconductor or the N-type electrode.

[0259] Referring to Figure 9 and Figure 10 As shown, in the independent driving mode, in the multi-wavelength light emitting diode chip of the present application, a number of sub-light adjusting layers are arranged one by one corresponding to other sub-pixels, except for the sub-pixel with the maximum light emitting wavelength. That is, the sub-pixel with the maximum light emitting wavelength does not need to be provided with a light adjusting layer.

[0260] That is, the mth sub-pixel has the maximum light emitting wavelength, and the remaining sub-pixels are all provided with a filter light adjusting layer. For example, the first sub-pixel is provided with a first light adjusting layer CF1, the second sub-pixel is provided with a second light adjusting layer CF2, the third sub-pixel is provided with a third light adjusting layer CF3, and the (m-1)th sub-pixel is provided with an (m-1)th light adjusting layer CFm-1. Each light adjusting layer can be arranged on the side of the sub-P-type electrode away from the light emitting layer Figure 9 ), or can be arranged on the side of the N-type electrode away from the light emitting layer Figure 10 . Among them, Figure 9 As shown is a multi-wavelength light emitting diode chip in a normal architecture. Figure 10 As shown is a multi-wavelength light emitting diode chip in a vertical flip architecture.

[0261] This is because, taking red light as an example, the multi-wavelength light emitting diode chip can adjust the minimum voltage so that only in the red light emitting layer there is a combination of electrons and holes, and red light is emitted. The light emitting surface corresponding to the sub-pixel can not need to be provided with a red light adjusting layer, and the emission of red light can be ensured. If a red light adjusting layer is used, the light emitting efficiency of the red light will be reduced. Therefore, such a setting can effectively reduce the preparation cost and improve the light efficiency.

[0262] The following will compare the multi-wavelength electroluminescent light-emitting diode chip (hereinafter referred to as EL multi-wavelength chip) in the related art with the multi-wavelength electroluminescent light-emitting diode chip (hereinafter referred to as EL modulation multi-wavelength chip) provided in the embodiments of the present application, which can be adjusted in voltage / current, as shown in Table 1.

[0263] As shown in Table 1, the existing EL multi-wavelength chip has a working voltage range, and only in the working voltage range, the brightness is adjusted by adjusting the voltage, and the number of wavelengths is not adjusted. In the embodiments of the present application, the EL modulation multi-wavelength chip is adjusted in voltage / current to achieve the purpose of adjusting the number of wavelengths.

[0264] Table 1 Comparison of EL multi-wavelength chip and EL modulation multi-wavelength chip

[0265]

[0266] Further, compared with the EL multi-wavelength chip, in the common driving mode, the number of wavelengths can be controlled by adjusting the voltage / current in the EL modulation multi-wavelength chip provided in the embodiments of the present application. Taking the sub-pixels including red light sub-pixels, blue light sub-pixels and green light sub-pixels as an example, in the common driving mode and the independent driving mode, the red light sub-pixels and the green light sub-pixels can be driven by a lower voltage than the blue light sub-pixels, so the overall driving power consumption is lower, which helps to improve the energy saving effect.

[0267] Referring to Figures 11 to 18 As shown in FIG. 1, the N-type electrode includes m sub-N-type electrodes which are separate from each other; the N-type semiconductor layer includes m sub-N-type semiconductor layers which are separate from each other; the m sub-pixels close to one side of the N-type semiconductor layer are in one-to-one correspondence with the m sub-N-type semiconductor layers for contact conduction; and the m sub-N-type semiconductor layers are in one-to-one correspondence with the m sub-N-type electrodes.

[0268] It should be noted that the m sub-N-type electrodes which are separate from each other include a first sub-N-type electrode N1, a second sub-N-type electrode N2, a third sub-N-type electrode N3, …, and an mth sub-N-type electrode Nm. The first sub-N-type electrode N1, the second sub-N-type electrode N2, the third sub-N-type electrode N3, …, and the mth sub-N-type electrode Nm are respectively electrically conductive with a first sub-pixel SP1, a second sub-pixel SP2, a third sub-pixel SP3, …, and an mth sub-pixel SPm. The first sub-pixel SP1, the second sub-pixel SP2, the third sub-pixel SP3, …, and the mth sub-pixel SPm are electrically conductive with the same P-type electrode.

[0269] When the first sub N-type electrode N1, the second sub N-type electrode N2, the third sub N-type electrode N3, …, the mth sub N-type electrode Nm, and the P-type electrode are in the energized state, the first sub-pixel SP1, the second sub-pixel SP2, the third sub-pixel SP3, …, and the mth sub-pixel SPm can be independently driven, respectively, to emit light rays of different wavelengths. In this way, another independently driven multi-wavelength light-emitting diode chip in another independently driven mode can also be formed.

[0270] Referring to Figure 12 As shown in FIG. 1, each sub-pixel can include a first light-emitting layer, a second light-emitting layer, a third light-emitting layer, …, and an Nth light-emitting layer. Referring to Figure 13 As shown in FIG. 1, the first light-emitting layer, the second light-emitting layer, the third light-emitting layer, …, and the Nth light-emitting layer can form a light-emitting layer group. Each sub-pixel can include n light-emitting layer groups stacked periodically, for example, 2 groups of stacked light-emitting layer groups, or 3 groups of stacked light-emitting layer groups, or more groups of stacked light-emitting layer groups. The stacking order of the first light-emitting layer, the second light-emitting layer, the third light-emitting layer, …, and the Nth light-emitting layer in each light-emitting layer group can be the same or different.

[0271] Referring to Figures 11 to 17 As shown in FIG. 1, an isolation structure can also be provided between adjacent sub-pixels. The specific structure and arrangement of the isolation structure are the same as described above, and will not be described again here.

[0272] Referring to Figure 14 and Figure 17 As shown in FIG. 1, the isolation structure extends into the P-type semiconductor layer. The isolation structure can also extend into the P-type electrode. In this way, the isolation effect of the isolation structure on adjacent sub-pixels can be improved. It should be noted that when at least part of the isolation structure extends into the P-type semiconductor or the P-type electrode, the isolation structure can be located only in the part of the P-type semiconductor or the P-type electrode close to the light-emitting layer, and does not penetrate the P-type semiconductor or the P-type electrode along the thickness direction of the P-type semiconductor or the P-type electrode.

[0273] Referring to Figure 18 As shown in FIG. 1, in the other independently driven mode, in the multi-wavelength light-emitting diode chip of the present application, a number of sub-light-adjusting layers are arranged one-to-one corresponding to other sub-pixels, except for the sub-pixel with the longest light-emitting wavelength. That is, the sub-pixel with the longest light-emitting wavelength does not need to be provided with a light-adjusting layer.

[0274] That is, the m-th sub-pixel emits the largest wavelength, and all other sub-pixels are respectively equipped with a dimming filter layer. For example, the first sub-pixel is equipped with a first dimming layer CF1, the second sub-pixel with a second dimming layer CF2, the third sub-pixel with a third dimming layer CF3, and so on, with the (m-1)-th sub-pixel equipped with the (m-1)-th dimming layer CFm-1. Each dimming layer can be located on the side of the N-type electrode facing away from the light-emitting layer (not shown), or it can be located on the side of the P-type electrode facing away from the light-emitting layer. Figure 18 The reasons for this setup and its technical effects are the same as those described above, and will not be repeated here.

[0275] Reference Figure 19 As shown, the light-emitting layer includes a blue light-emitting layer 117-B, a green light-emitting layer 117-G, and a red light-emitting layer 117-R. Along the direction from the N-type electrode to the P-type electrode, the red light-emitting layer 117-R, the green light-emitting layer 117-G, and the blue light-emitting layer 117-B are stacked sequentially. The light-emitting layer formed by the red light-emitting layer 117-R, the green light-emitting layer 117-G, and the blue light-emitting layer 117-B includes a first light-emitting region Q-1, a second light-emitting region Q-2, and a third light-emitting region Q-3. These three regions share an N-type electrode and are electrically connected to the first sub-P-type electrode P1, the second sub-P-type electrode P2, and the third sub-P-type electrode P3, respectively, forming an independent driving mode.

[0276] Specifically, the red light emitting layer 117-R has a red light operating voltage Vfr ranging from 1.8V to 2.2V. The green light emitting layer 117-G has a green light operating voltage Vfg ranging from 2.3V to 2.6V. The blue light emitting layer 117-B has a blue light operating voltage Vfb ranging from 2.7V to 3V.

[0277] As one feasible implementation, the red light operating voltage Vfr of the red light emitting layer 117-R can be 1.984V, the green light emitting layer 117-G can have a green light operating voltage Vfg of 2.4V, and the blue light emitting layer 117-B can have a blue light operating voltage Vfb of 2.755V.

[0278] When a voltage Vfr is applied to the third emitting region Q-3 of the multi-wavelength LED chip, the red emitting layer 117-R in the multi-wavelength LED chip emits red light through electroluminescence. This red light emission from the third emitting region Q-3 eliminates the need for a dimming layer corresponding to the red light wavelength. In the diagram, h represents a hole and e represents an electron. Holes and electrons recombine only in the red emitting layer 117-R, exciting it to emit light and forming the electroluminescence of the red emitting layer 117-R. The principle of electroluminescence described below is similar.

[0279] When a voltage Vfg is applied to the second light-emitting region Q-2 of the multi-wavelength LED chip, the green light-emitting layer 117-G in the multi-wavelength LED chip emits green light through electroluminescence, and photoexcites the red light-emitting layer 117-R to produce red light. The red light is filtered out by the green light dimming layer CF-G, leaving only green light emitted. It should be noted that the red light-emitting layer 117-R may also exhibit electroluminescence.

[0280] When a voltage Vfb is applied to the first light-emitting region Q-1 of the multi-wavelength LED chip, the blue light-emitting layer 117-B in the chip electroluminescently emits blue light, and photo-excites the red light-emitting layer 117-R and the green light-emitting layer 117-G to produce red and green light, respectively. After passing through the blue light dimming layer CF-B, the green and red light are filtered out, leaving only blue light emitted. It should be noted that the red light-emitting layer 117-R and the green light-emitting layer 117-G may also exhibit electroluminescence.

[0281] Combination Figure 121 and Figure 123 As shown, taking a single-core, three-wavelength, three-sub-pixel as an example, in the shared driving mode, by adjusting the voltage or current value and using a dimming layer, each sub-pixel can also be driven independently.

[0282] Reference Figure 121 As shown, when a voltage Vfr is applied to the multi-wavelength LED chip, the red light-emitting layer 117-R in the multi-wavelength LED chip emits red light through electroluminescence. This red light is filtered out when passing through the blue light dimming layer CF-B and the green light dimming layer CF-G. Only when passing through the red light dimming layer CF-R is the red light emitted.

[0283] Reference Figure 123 As shown, when a voltage Vfg is applied to the multi-wavelength LED chip, the green emitting layer 117-G in the chip electroluminescently emits green light, and photo-excites the red emitting layer 117-R to produce red light. The red light is filtered out by the blue dimming layer CF-B. Only the red dimming layer CF-R emits red light, and the green dimming layer CF-G emits green light. It should be noted that the red emitting layer 117-R may also exhibit electroluminescence.

[0284] In the multi-wavelength light-emitting diode chip of this application embodiment, m sub-pixels form x pixel subgroups; x is a positive integer greater than or equal to 1. When x is greater than 1, the x pixel subgroups are arranged in an array along the direction perpendicular to the N-type electrode to the P-type electrode.

[0285] A pixel subgroup comprises at least two subpixels; within the same pixel subgroup, at least a portion of the subpixels emit different wavelengths. Thus, this multi-wavelength LED chip can form RGB full-color pixel units through the arrangement of pixel subgroups, thereby forming an RGB full-color chipset.

[0286] In the multi-wavelength light-emitting diode chip of this application embodiment, the number of emission wavelengths of the multi-wavelength light-emitting diode chip is 2.

[0287] As one feasible implementation, in the same pixel subgroup, the emission wavelength of each subpixel is different; the number of subpixels in the pixel subgroup is n and equal to 2, and the number of subpixels in the multi-wavelength light-emitting diode chip is 2x.

[0288] Reference Figures 20 to 25 As shown, when x is 1, the number of sub-pixels in the multi-wavelength light-emitting diode chip is 2, which can specifically include sub-pixel B and sub-pixel G. Figure 20 The chip C1 shown, or sub-pixel R and sub-pixel B ( Figure 21 The chip C2 shown, or sub-pixel G and sub-pixel R ( Figure 22 The chip C3 shown, or sub-pixel G and sub-pixel B ( Figure 23 The chip C4 shown, or sub-pixel R and sub-pixel G ( Figure 24 The chip C5 shown, or sub-pixel B and sub-pixel R ( Figure 25 The chip shown is C6.

[0289] As another feasible implementation, in the same pixel subgroup, a number of subpixels have the same emission wavelength; the number of subpixels in the pixel subgroup is n and greater than 2, and the number of subpixels in the multi-wavelength light-emitting diode chip is nx.

[0290] Reference Figures 26 to 31 As shown, when x is 1, the number of sub-pixels in a multi-wavelength LED chip can be 3. Two of these sub-pixels emit the same wavelength, and the third sub-pixel emits a different wavelength. Figure 26 and Figure 27 As shown, the multi-wavelength light-emitting diode chip includes two light-emitting layers 117-1 with a first light-emitting wavelength and a light-emitting layer 117-2 with a second light-emitting wavelength. The arrangement of the three sub-pixels formed is not limited.

[0291] A multi-wavelength light-emitting diode chip can have four sub-pixels, with two sub-pixels emitting the same wavelength and the other two sub-pixels emitting a different wavelength. Figures 28 to 31 As shown, the multi-wavelength light-emitting diode chip includes two light-emitting layers 117-1 with two first light-emitting wavelengths and two light-emitting layers 117-2 with two second light-emitting wavelengths, and the arrangement of the four sub-pixels formed is not limited.

[0292] The multi-wavelength light emitting diode chip can be driven in a common driving mode or in an independent driving mode. Referring to FIGS. 1A and 1B, in the independent driving mode, a part of the sub-pixels can share a sub-N-type electrode. For example, as shown in FIG. 1A, two sub-pixels formed by the light emitting layer 117-1 and the light emitting layer 117-2 share the sub-N-type electrode N1, and another two sub-pixels formed by the light emitting layer 117-1 and the light emitting layer 117-2 share the sub-N-type electrode N2. The four sub-pixels are respectively connected to the sub-P-type electrode P11, the sub-P-type electrode P12, the sub-P-type electrode P21, and the sub-P-type electrode P22. Figure 32 and Figure 34 Referring to FIGS. 1A and 1B, in the independent driving mode, a part of the sub-pixels can share a sub-N-type electrode. For example, as shown in FIG. 1A, two sub-pixels formed by the light emitting layer 117-1 and the light emitting layer 117-2 share the sub-N-type electrode N1, and another two sub-pixels formed by the light emitting layer 117-1 and the light emitting layer 117-2 share the sub-N-type electrode N2. The four sub-pixels are respectively connected to the sub-P-type electrode P11, the sub-P-type electrode P12, the sub-P-type electrode P21, and the sub-P-type electrode P22. Figure 32 Referring to FIGS. 1A and 1B, in the independent driving mode, a part of the sub-pixels can share a sub-N-type electrode. For example, as shown in FIG. 1A, two sub-pixels formed by the light emitting layer 117-1 and the light emitting layer 117-2 share the sub-N-type electrode N1, and another two sub-pixels formed by the light emitting layer 117-1 and the light emitting layer 117-2 share the sub-N-type electrode N2. The four sub-pixels are respectively connected to the sub-P-type electrode P11, the sub-P-type electrode P12, the sub-P-type electrode P21, and the sub-P-type electrode P22.

[0293] Figure 33 Referring to FIGS. 1A and 1B, in the independent driving mode, a part of the sub-pixels can share a sub-N-type electrode. For example, as shown in FIG. 1A, two sub-pixels formed by the light emitting layer 117-1 and the light emitting layer 117-2 share the sub-N-type electrode N1, and another two sub-pixels formed by the light emitting layer 117-1 and the light emitting layer 117-2 share the sub-N-type electrode N2. The four sub-pixels are respectively connected to the sub-P-type electrode P11, the sub-P-type electrode P12, the sub-P-type electrode P21, and the sub-P-type electrode P22. Figure 35 Figure 33 Referring to FIGS. 1A and 1B, in the independent driving mode, a part of the sub-pixels can share a sub-N-type electrode. For example, as shown in FIG. 1A, two sub-pixels formed by the light emitting layer 117-1 and the light emitting layer 117-2 share the sub-N-type electrode N1, and another two sub-pixels formed by the light emitting layer 117-1 and the light emitting layer 117-2 share the sub-N-type electrode N2. The four sub-pixels are respectively connected to the sub-P-type electrode P11, the sub-P-type electrode P12, the sub-P-type electrode P21, and the sub-P-type electrode P22.

[0294] In some embodiments, if the multi-wavelength light emitting diode chip is directly applied, all the sub-pixels can share a P-type electrode or share an N-type electrode. If the multi-wavelength light emitting diode chip is packaged first and then applied, the size of the P-type electrode shared by multiple sub-pixels and the size of the N-type electrode shared by multiple sub-pixels can be controlled within 1 mm.

[0295] Referring to FIGS. 1A and 1B, in the independent driving mode, a part of the sub-pixels can share a sub-N-type electrode. For example, as shown in FIG. 1A, two sub-pixels formed by the light emitting layer 117-1 and the light emitting layer 117-2 share the sub-N-type electrode N1, and another two sub-pixels formed by the light emitting layer 117-1 and the light emitting layer 117-2 share the sub-N-type electrode N2. The four sub-pixels are respectively connected to the sub-P-type electrode P11, the sub-P-type electrode P12, the sub-P-type electrode P21, and the sub-P-type electrode P22. Figure 36 Referring to FIGS. 1A and 1B, in the independent driving mode, a part of the sub-pixels can share a sub-N-type electrode. For example, as shown in FIG. 1A, two sub-pixels formed by the light emitting layer 117-1 and the light emitting layer 117-2 share the sub-N-type electrode N1, and another two sub-pixels formed by the light emitting layer 117-1 and the light emitting layer 117-2 share the sub-N-type electrode N2. The four sub-pixels are respectively connected to the sub-P-type electrode P11, the sub-P-type electrode P12, the sub-P-type electrode P21, and the sub-P-type electrode P22.

[0296] Figure 37 Referring to FIGS. 1A and 1B, in the independent driving mode, a part of the sub-pixels can share a sub-N-type electrode. For example, as shown in FIG. 1A, two sub-pixels formed by the light emitting layer 117-1 and the light emitting layer 117-2 share the sub-N-type electrode N1, and another two sub-pixels formed by the light emitting layer 117-1 and the light emitting layer 117-2 share the sub-N-type electrode N2. The four sub-pixels are respectively connected to the sub-P-type electrode P11, the sub-P-type electrode P12, the sub-P-type electrode P21, and the sub-P-type electrode P22. Figure 38 Figure 39 Referring to FIGS. 1A and 1B, in the independent driving mode, a part of the sub-pixels can share a sub-N-type electrode. For example, as shown in FIG. 1A, two sub-pixels formed by the light emitting layer 117-1 and the light emitting layer 117-2 share the sub-N-type electrode N1, and another two sub-pixels formed by the light emitting layer 117-1 and the light emitting layer 117-2 share the sub-N-type electrode N2. The four sub-pixels are respectively connected to the sub-P-type electrode P11, the sub-P-type electrode P12, the sub-P-type electrode P21, and the sub-P-type electrode P22.

[0297] ​​​​As another feasible implementation, the number of emission wavelengths of the multi-wavelength light-emitting diode chip is greater than or equal to 3.

[0298] In the same pixel subgroup, each subpixel emits a different wavelength; the number of subpixels in the pixel subgroup is n; n subpixels form one pixel unit, and the number of subpixels in a multi-wavelength light-emitting diode chip is nx.

[0299] Reference Figures 40 to 45 As shown, when n is 3 and x is 1, the number of sub-pixels in the multi-wavelength LED chip is 3. Specifically, the sub-pixels of the multi-wavelength LED chip can include sub-pixel B, sub-pixel G, and sub-pixel R. Figure 40 The chip C1 shown, or sub-pixel B, sub-pixel R and sub-pixel G ( Figure 41 The chip C2 shown, or sub-pixels G, B, and R ( Figure 42 The chip C3 shown, or sub-pixel G, sub-pixel R and sub-pixel B ( Figure 43 The chip C4 shown, or sub-pixels R, B, and G ( Figure 44 The chip C5 shown, or sub-pixels R, G, and B ( Figure 45 The chip shown is C6.

[0300] Reference Figures 46 to 51 As shown, when n is 3 and x is 2, the number of sub-pixels in the multi-wavelength LED chip is 6. Specifically, the sub-pixels of the multi-wavelength LED chip can include sub-pixels B, G, R, B, G, and R(…). Figure 46 The chip C1 shown, or sub-pixel B, sub-pixel R, sub-pixel G, sub-pixel B, sub-pixel R and sub-pixel G ( Figure 47 The chip C2 shown, or sub-pixels G, B, R, G, B, and R ( Figure 48 The chip C3 shown, or sub-pixels G, R, B, G, R, and B ( Figure 49 The chip C4 shown, or sub-pixels R, B, G, R, B, and G ( Figure 50 The chip C5 shown, or sub-pixels R, G, B, R, G, and B ( Figure 51 The chip shown is C6.

[0301] Reference Figures 52 to 57 As shown, when n is 3 and x is greater than 2, the number of sub-pixels in the multi-wavelength LED chip is 3*x. The specific sub-pixels of the multi-wavelength LED chip are shown in the diagram and will not be repeated here.

[0302] ReferenceFigure 58 As shown in FIG. 8, when n is 3 and x is 1, the number of sub-pixels of the multi-wavelength light emitting diode chip is 2. The sub-pixels of the multi-wavelength light emitting diode chip can specifically include sub-pixel R, sub-pixel B, sub-pixel G and sub-pixel R (as shown in chip C1), or sub-pixel G, sub-pixel B, sub-pixel B and sub-pixel R (as shown in chip C2), or sub-pixel G, sub-pixel B, sub-pixel G and sub-pixel R (as shown in chip C3). The position order of the above-mentioned sub-pixels can be exchanged, and the application is not limited to the above-mentioned arrangement.

[0303] As another implementable embodiment, n+1 sub-pixels form one pixel unit, and the number of sub-pixels of the multi-wavelength light emitting diode chip is (n+1)x.

[0304] Referring to FIG. 9, Figures 59-61 As shown in FIG. 9, when n is 3 and x is 1, the number of sub-pixels of the multi-wavelength light emitting diode chip is 2. The sub-pixels of the multi-wavelength light emitting diode chip can specifically include sub-pixel R, sub-pixel B, sub-pixel G and sub-pixel R (as shown in chip C1), or sub-pixel G, sub-pixel B, sub-pixel B and sub-pixel R (as shown in chip C2), or sub-pixel G, sub-pixel B, sub-pixel G and sub-pixel R (as shown in chip C3). The position order of the above-mentioned sub-pixels can be exchanged, and the application is not limited to the above-mentioned arrangement. Figure 59 As shown in FIG. 9, when n is 3 and x is 1, the number of sub-pixels of the multi-wavelength light emitting diode chip is 2. The sub-pixels of the multi-wavelength light emitting diode chip can specifically include sub-pixel R, sub-pixel B, sub-pixel G and sub-pixel R (as shown in chip C1), or sub-pixel G, sub-pixel B, sub-pixel B and sub-pixel R (as shown in chip C2), or sub-pixel G, sub-pixel B, sub-pixel G and sub-pixel R (as shown in chip C3). The position order of the above-mentioned sub-pixels can be exchanged, and the application is not limited to the above-mentioned arrangement. Figure 60 As shown in FIG. 9, when n is 3 and x is 1, the number of sub-pixels of the multi-wavelength light emitting diode chip is 2. The sub-pixels of the multi-wavelength light emitting diode chip can specifically include sub-pixel R, sub-pixel B, sub-pixel G and sub-pixel R (as shown in chip C1), or sub-pixel G, sub-pixel B, sub-pixel B and sub-pixel R (as shown in chip C2), or sub-pixel G, sub-pixel B, sub-pixel G and sub-pixel R (as shown in chip C3). The position order of the above-mentioned sub-pixels can be exchanged, and the application is not limited to the above-mentioned arrangement. Figure 61 As shown in FIG. 9, when n is 3 and x is 1, the number of sub-pixels of the multi-wavelength light emitting diode chip is 2. The sub-pixels of the multi-wavelength light emitting diode chip can specifically include sub-pixel R, sub-pixel B, sub-pixel G and sub-pixel R (as shown in chip C1), or sub-pixel G, sub-pixel B, sub-pixel B and sub-pixel R (as shown in chip C2), or sub-pixel G, sub-pixel B, sub-pixel G and sub-pixel R (as shown in chip C3). The position order of the above-mentioned sub-pixels can be exchanged, and the application is not limited to the above-mentioned arrangement.

[0305] Referring to FIG. 10, Figure 62 As shown in FIG. 10, when n is 3 and x is greater than 2, the number of sub-pixels of the multi-wavelength light emitting diode chip is 4*x. The sub-pixels of the multi-wavelength light emitting diode chip can specifically refer to the illustration, and will not be repeated here.

[0306] Referring to FIG. 11, Figure 63 As shown in FIG. 11, when n is 4 and x is greater than 2, the number of sub-pixels of the multi-wavelength light emitting diode chip is 5*x. The sub-pixels of the multi-wavelength light emitting diode chip can specifically refer to the illustration, and will not be repeated here.

[0307] As another implementable embodiment, n+y sub-pixels form one pixel unit, and the number of sub-pixels of the multi-wavelength light emitting diode chip is (n+y)x; wherein y is a positive integer greater than or equal to 2.

[0308] Referring to FIG. 12, Figures 64 to 66 As shown in FIG. 12, when n is 3, x is 1, and y is 2, the number of sub-pixels of the multi-wavelength light emitting diode chip is 4. The sub-pixels of the multi-wavelength light emitting diode chip can specifically include sub-pixel R, sub-pixel B, sub-pixel R, sub-pixel G and sub-pixel B (as shown in chip C). Figure 64 As shown in FIG. 12, when n is 3, x is 1, and y is 2, the number of sub-pixels of the multi-wavelength light emitting diode chip is 4. The sub-pixels of the multi-wavelength light emitting diode chip can specifically include sub-pixel R, sub-pixel B, sub-pixel R, sub-pixel G and sub-pixel B (as shown in chip C).

[0309] Referring to FIG. 13, Figure 65 As shown in FIG. 13, when n is 3, x is 1, and y is 5, the number of sub-pixels of the multi-wavelength light emitting diode chip is 8. The sub-pixels of the multi-wavelength light emitting diode chip can specifically refer to the illustration, and will not be repeated here.

[0310] Referring to Figure 66 As shown in FIG. 1, when n is 3 and x is greater than 2, y is 2, the number of sub-pixels of the multi-wavelength light emitting diode chip is 5*x. The sub-pixels of the multi-wavelength light emitting diode chip are specifically shown in the figure, and will not be described here again.

[0311] As another implementable embodiment, at least part of the number of pixel units share 2 sub-pixels, and the number of sub-pixels of the multi-wavelength light emitting diode chip is (2n-2)x.

[0312] Referring to Figures 67 to 69 As shown in FIG. 2, when n is 3 and x is 1, part of the number of sub-pixels are shared. The sub-pixels of the multi-wavelength light emitting diode chip can specifically include sub-pixel B, sub-pixel G, sub-pixel R and sub-pixel G (chip C1 shown in FIG. 3), and the shared sub-pixels are sub-pixel R and sub-pixel B. Figure 67

[0313] The sub-pixels of the multi-wavelength light emitting diode chip can specifically include sub-pixel R, sub-pixel G, sub-pixel B and sub-pixel G (chip C2 shown in FIG. 4), and the shared sub-pixels are sub-pixel R and sub-pixel B. Figure 68

[0314] The shared sub-pixel B and sub-pixel R are larger in size than the unshared sub-pixel G.

[0315] Referring to Figure 69 As shown in FIG. 5, the multi-wavelength light emitting diode chip described above can be arranged in an array.

[0316] Referring to Figure 70 As shown in FIG. 6, the shared sub-pixels can also be sub-pixel R and sub-pixel G. As shown in FIG. 7, the shared sub-pixels can also be sub-pixel B and sub-pixel G. The size of the shared sub-pixels can also be the same as the size of the unshared sub-pixels. Figure 71 Referring to

[0317] As shown in FIG. 8, when n is 4 and x is 1, the shared sub-pixels can be two. Among them, sub-pixel G1 and sub-pixel G2 are sub-pixels with different light emitting wavelengths. The shared sub-pixels can be sub-pixel G1 and sub-pixel R, or sub-pixel G2 and sub-pixel R, or sub-pixel G1 and sub-pixel B, or sub-pixel G2 and sub-pixel B, or sub-pixel G1 and sub-pixel G2, or sub-pixel R and sub-pixel B. Figures 72 to 74 Next, the light emitting wavelengths of the multi-wavelength light emitting diode chip provided by the embodiments of the present application are described.

[0318]

[0319] ​​​In the multiple light-emitting layers, the first light-emitting layer can be any first wavelength, the second light-emitting layer can be any second wavelength except the first wavelength, the third light-emitting layer can be any third wavelength except the first wavelength and the second wavelength, and so on, and the Nth light-emitting layer can be any Nth wavelength except the first wavelength, the second wavelength, the third wavelength, and so on.

[0320] For example, a single-core dual-wavelength multi-wavelength light-emitting diode chip is taken as an example. The multi-wavelength light-emitting diode chip includes 2 sub-pixels: specifically, sub-pixel B + sub-pixel G, sub-pixel B + sub-pixel R, sub-pixel R + sub-pixel G, sub-pixel UVA + sub-pixel B, sub-pixel B1 + sub-pixel B2, or a 450 nm wavelength sub-pixel + a 480 nm wavelength sub-pixel, and the like.

[0321] The multi-wavelength light-emitting diode chip includes 4 sub-pixels: specifically, sub-pixel B + sub-pixel G (+ sub-pixel G + sub-pixel B); sub-pixel B + sub-pixel R + sub-pixel B + sub-pixel R, sub-pixel G + sub-pixel R + sub-pixel G + sub-pixel R, sub-pixel UVA + sub-pixel B (+ sub-pixel B + sub-pixel UVA); or a 450 nm wavelength sub-pixel + a 480 nm wavelength sub-pixel (+ a 450 nm wavelength sub-pixel + a 480 nm wavelength sub-pixel), and the like.

[0322] For example, a single-core three-color multi-sub-pixel is taken as an example. The multi-wavelength light-emitting diode chip includes 3 sub-pixels: specifically, sub-pixel R + sub-pixel G + sub-pixel B, sub-pixel magenta + sub-pixel cyan + sub-pixel light yellow; a 450 nm wavelength sub-pixel + a 460 nm wavelength sub-pixel + a 480 nm wavelength sub-pixel, and the like.

[0323] The multi-wavelength light-emitting diode chip includes 6 sub-pixels: specifically, sub-pixel R + sub-pixel G + sub-pixel B + sub-pixel R + sub-pixel G + sub-pixel B, sub-pixel magenta + sub-pixel cyan + sub-pixel light yellow + sub-pixel magenta + sub-pixel cyan + sub-pixel light yellow; a 450 nm wavelength sub-pixel + a 460 nm wavelength sub-pixel + a 480 nm wavelength sub-pixel (+ a 450 nm wavelength sub-pixel + a 460 nm wavelength sub-pixel + a 480 nm wavelength sub-pixel), and the like.

[0324] Next, the shape and size of the multi-wavelength light-emitting diode chip and the sub-pixel provided by the embodiments of the present application are described.

[0325] The size of the multi-wavelength light-emitting diode chip is greater than or equal to 50 microns. The shape of the multi-wavelength light-emitting diode chip is any one of a rectangle, a square, a circle, an ellipse, a triangle, a rhombus, a parallelogram, and a polygon with more than four sides;

[0326] The size of the sub-pixel ranges from 0.001 to 200 microns. The shape of the sub-pixel is any one of a rectangle, a square, a circle, an ellipse, a triangle, a rhombus, a parallelogram, and a polygon with more than four sides.

[0327] The shapes of different sub-pixels are the same or different; the sizes of different sub-pixels are equal or different.

[0328] The "size" mentioned above can be understood as the extension length of a certain extension direction of the sub-pixel, for example, the length or width of a rectangular sub-pixel, the major axis length or minor axis length of an elliptical sub-pixel, or the diameter of a circular sub-pixel, etc.

[0329] In some embodiments, the size of the pixel sub-group is greater than or equal to 50 microns. The size of the multi-wavelength light-emitting diode chip composed of the pixel sub-group can also be greater than or equal to 50 microns. For example, it can be 50-100 microns, or 100-150 microns, or greater than 150 microns. Of course, in some embodiments, the size of the multi-wavelength light-emitting diode chip can also be less than 50 microns. The multi-wavelength light-emitting diode chip can be selected to have different sizes according to different use scenarios.

[0330] In some embodiments, the size of the sub-pixel ranges from 0.001 to 200 microns. When the size of the sub-pixel is 0.001-0.1 microns, the size of the sub-pixel is at the nanometer level, which is a nano LED. In the preparation process, the arrangement of the single-core double-color multi-sub-pixel can be referred to, which helps to increase the size of the single chip containing multiple nano LEDs, so that the size of the single chip approaches or falls within the size range of the LED chip that can be operated by the current mass transfer process, thereby reducing the operation difficulty of the nano LED preparation process and improving the operability.

[0331] In other embodiments, for example, a multi-wavelength light-emitting diode chip using 2*2 combined sub-pixels applied to a large television, the size of a single sub-pixel can be 50 microns, and the spacing between adjacent two sub-pixels is 10 microns. The length and width of the multi-wavelength light-emitting diode chip are both 110 microns, and the size of the multi-wavelength light-emitting diode chip can be counted as 110*110 microns. The multi-wavelength light-emitting diode chip with such a size can use the packaging process of miniLED.

[0332] The size of the multi-wavelength light-emitting diode chip and the size of the sub-pixel will be different according to the use scenario of the multi-wavelength light-emitting diode chip. In the following, the size of the multi-wavelength light-emitting diode chip and the size of the sub-pixel in different use scenarios are exemplarily described.

[0333] When the multi-wavelength light emitting diode chip is applied to display products such as home televisions and desktop computers, when the pixel density is 50-150, the size (pitch) of a pixel unit composed of a plurality of sub-pixels in the multi-wavelength light emitting diode chip can be 150-700 microns, the size (sub-pitch) of a sub-pixel in the multi-wavelength light emitting diode chip can be less than 250 microns, and the size of the multi-wavelength light emitting diode chip can be greater than 100 microns.

[0334] When the multi-wavelength light emitting diode chip is applied to display products such as notebook computers and tablet computers, when the pixel density is 150-250, the size of a sub-pixel can be less than 70 microns, the size of a pixel unit can be 100-200 microns, and the size of the multi-wavelength light emitting diode chip can be greater than 60 microns.

[0335] When the multi-wavelength light emitting diode chip is applied to display products such as mobile phones and electronic watches, when the pixel density is greater than 300, the size of a sub-pixel can be less than 30 microns, the size of a pixel unit can be less than 100 microns, and the size of the multi-wavelength light emitting diode chip can be greater than 50 microns.

[0336] Therefore, the multi-wavelength light emitting diode chip provided by the embodiments of the present application adopts a single-chip double-color multi-sub-pixel arrangement mode, the size of the sub-pixel and the size range of the multi-wavelength light emitting diode chip are relatively large, and the multi-wavelength light emitting diode chip can be applied to different use scenarios, thereby increasing the applicability of the multi-wavelength light emitting diode chip.

[0337] In the following, other structures and arrangement modes of the multi-wavelength light emitting diode chip are described in detail.

[0338] Referring to FIG. 1, Figure 89 The multi-wavelength light emitting diode chip provided by the embodiments of the present application further includes a buffer layer 101, an N-type semiconductor layer 103, a P-type semiconductor layer 105, a current spreading layer 106, a reflective layer 107, and a first insulating layer 108. The buffer layer 101 and the N-type semiconductor layer 103 are stacked, a light emitting layer is arranged on a side of the N-type semiconductor layer 103 away from the buffer layer 101, and the P-type semiconductor layer 105 is arranged on a side of the light emitting layer away from the buffer layer 101; the current spreading layer 106 is in contact with a side of the P-type semiconductor layer 105 away from the buffer layer 101, an N-type electrode 102 is in contact with the N-type semiconductor layer 103, and a P-type electrode 104 is in contact with the P-type semiconductor layer 105 and the current spreading layer 106; and the first insulating layer 108 is arranged on a side of the current spreading layer 106 away from the buffer layer 101. In this way, a multi-wavelength light emitting diode chip in a thin film flip chip structure can be formed. The light emitting layer includes a first light emitting layer, a second light emitting layer, and a third light emitting layer which are stacked.

[0339] Optionally, the reflective layer 107 is arranged on the side of the buffer layer 101 away from the light-emitting layer, so that the light-emitting direction of the multi-wavelength light-emitting diode chip is away from the direction of the buffer layer 101. Optionally, referring to Figure 89 The reflective layer 107 is arranged on the side of the first insulating layer 108 away from the buffer layer 101, and the side of the reflective layer 107 away from the buffer layer 101 is further provided with a second insulating layer 109. In this way, the light-emitting direction of the multi-wavelength light-emitting diode chip is toward the direction of the buffer layer 101, that is, the downward arrow direction shown in the figure.

[0340] The material of the buffer layer 101 can be one or more of gallium nitride, aluminum gallium nitride, and aluminum indium gallium nitride, and the thickness of the buffer layer 101 can be 10-40 nanometers. The material of the N-type semiconductor layer 103 can be N-type doped gallium nitride, and the material of the P-type semiconductor layer 105 can be P-type doped gallium nitride. The material of the current spreading layer 106 can be a transparent conductive material (indium tin oxide, ITO) or silver, etc., which can improve the distribution ability of the P-type electrode and make the holes as uniformly distributed as possible in the region where the P-type semiconductor layer 105 is located. The material of the first insulating layer 108 can be silicon oxide or silicon nitride.

[0341] Referring to Figure 90 On the basis of the above-mentioned thin-film multi-wavelength light-emitting diode chip, the multi-wavelength light-emitting diode chip further comprises a substrate 100 arranged on the side of the buffer layer 101 away from the light-emitting layer. The material of the substrate 100 can be one or more of sapphire, gallium nitride, aluminum nitride, silicon, and silicon carbide.

[0342] Referring to Figure 91 When the reflective layer 107 is arranged on the side of the buffer layer 101 away from the light-emitting layer, the reflective layer 107 is arranged on the side of the substrate 100 away from the buffer layer 101. Figure 91 The light-emitting direction of the multi-wavelength light-emitting diode chip is the upward direction indicated by the arrow in the figure, forming a normal structure, Figure 90 The light-emitting direction of the multi-wavelength light-emitting diode chip is the downward direction indicated by the arrow in the figure, forming a flip-chip structure.

[0343] Referring to Figure 92As shown in FIG. 1, the multi-wavelength light emitting diode chip can further include a bonding substrate 110, a bonding layer 111, an N-type semiconductor layer 103, a P-type semiconductor layer 105, and a reflective layer 107. The bonding substrate 110 and the bonding layer 111 are sequentially arranged on the P-type electrode 104, the P-type semiconductor layer 105 is arranged on a side of the bonding layer 111 away from the bonding substrate 110 and contacts the bonding layer 111, the light emitting layer is arranged on a side of the P-type semiconductor layer 105 away from the bonding substrate 110, the N-type semiconductor layer 103 is arranged on a side of the light emitting layer away from the bonding substrate 110, the N-type electrode 102 contacts a side of the N-type semiconductor layer 103 away from the bonding substrate 110, and the reflective layer 107 is arranged on a side of the P-type semiconductor layer 105 close to the bonding substrate 110. The light emitting direction of the multi-wavelength light emitting diode chip can be an upward direction indicated by an arrow in the figure. The multi-wavelength light emitting diode chip with a vertical structure is formed.

[0344] Referring to FIG. 1, Figure 90 and Figure 91 As shown in FIG. 1, the multi-wavelength light emitting diode chip can further include a bonding substrate 110, a bonding layer 111, an N-type semiconductor layer 103, a P-type semiconductor layer 105, and a reflective layer 107. The bonding substrate 110 and the bonding layer 111 are sequentially arranged on the P-type electrode 104, the P-type semiconductor layer 105 is arranged on a side of the bonding layer 111 away from the bonding substrate 110 and contacts the bonding layer 111, the light emitting layer is arranged on a side of the P-type semiconductor layer 105 away from the bonding substrate 110, the N-type semiconductor layer 103 is arranged on a side of the light emitting layer away from the bonding substrate 110, the N-type electrode 102 contacts a side of the N-type semiconductor layer 103 away from the bonding substrate 110, and the reflective layer 107 is arranged on a side of the P-type semiconductor layer 105 close to the bonding substrate 110. The light emitting direction of the multi-wavelength light emitting diode chip can be an upward direction indicated by an arrow in the figure. The multi-wavelength light emitting diode chip with a vertical structure is formed.

[0345] Referring to FIG. 1, Figure 91 As shown in FIG. 1, the multi-wavelength light emitting diode chip can further include a bonding substrate 110, a bonding layer 111, an N-type semiconductor layer 103, a P-type semiconductor layer 105, and a reflective layer 107. The bonding substrate 110 and the bonding layer 111 are sequentially arranged on the P-type electrode 104, the P-type semiconductor layer 105 is arranged on a side of the bonding layer 111 away from the bonding substrate 110 and contacts the bonding layer 111, the light emitting layer is arranged on a side of the P-type semiconductor layer 105 away from the bonding substrate 110, the N-type semiconductor layer 103 is arranged on a side of the light emitting layer away from the bonding substrate 110, the N-type electrode 102 contacts a side of the N-type semiconductor layer 103 away from the bonding substrate 110, and the reflective layer 107 is arranged on a side of the P-type semiconductor layer 105 close to the bonding substrate 110. The light emitting direction of the multi-wavelength light emitting diode chip can be an upward direction indicated by an arrow in the figure. The multi-wavelength light emitting diode chip with a vertical structure is formed. Figure 91 The light emitting direction of the multi-wavelength light emitting diode chip is a downward direction indicated by an arrow in the figure, and the multi-wavelength light emitting diode chip with a flip-chip structure is formed. Figure 90 The light emitting direction of the multi-wavelength light emitting diode chip is a downward direction indicated by an arrow in the figure, and the multi-wavelength light emitting diode chip with a flip-chip structure is formed.

[0346] Referring to FIG. 1, Figure 92 As shown in FIG. 1, the multi-wavelength light emitting diode chip can further include a bonding substrate 110, a bonding layer 111, an N-type semiconductor layer 103, a P-type semiconductor layer 105, and a reflective layer 107. The bonding substrate 110 and the bonding layer 111 are sequentially arranged on the P-type electrode 104, the P-type semiconductor layer 105 is arranged on a side of the bonding layer 111 away from the bonding substrate 110 and contacts the bonding layer 111, the light emitting layer is arranged on a side of the P-type semiconductor layer 105 away from the bonding substrate 110, the N-type semiconductor layer 103 is arranged on a side of the light emitting layer away from the bonding substrate 110, the N-type electrode 102 contacts a side of the N-type semiconductor layer 103 away from the bonding substrate 110, and the reflective layer 107 is arranged on a side of the P-type semiconductor layer 105 close to the bonding substrate 110. The light emitting direction of the multi-wavelength light emitting diode chip can be an upward direction indicated by an arrow in the figure. The multi-wavelength light emitting diode chip with a vertical structure is formed.

[0347] It should be noted that in the above thin film forward, thin film flip, forward and flip structure, the P-type electrode 104 can also include a pad, the P-type electrode 104 and the P-type semiconductor layer 105 are in contact, which can be understood as the pad and the P-type semiconductor layer 105 are directly connected. The P-type electrode 104 can be in direct contact with the current spreading layer 106.

[0348] The N-type electrode 102 can also include a pad, the N-type electrode 102 and the N-type semiconductor layer 103 are in contact, which can be understood as the pad and the N-type semiconductor layer 103 are directly connected.

[0349] In a second aspect, the embodiments of the present application provide a multi-wavelength light emitting diode chip set, comprising a plurality of multi-wavelength light emitting diode chips, the plurality of multi-wavelength light emitting diode chips are arranged in an array.

[0350] The adjacent two multi-wavelength light emitting diode chips include a first multi-wavelength light emitting diode chip and a second multi-wavelength light emitting diode chip, and part of the number of sub-pixels of the first multi-wavelength light emitting diode chip and part of the number of sub-pixels of the second multi-wavelength light emitting diode chip together constitute a pixel unit.

[0351] It should be noted that the part of the number of sub-pixels of the first multi-wavelength light emitting diode chip and the second multi-wavelength light emitting diode chip constituting the pixel unit can be all or part of the sub-pixels in the same pixel sub-group. Alternatively, the two sub-pixels of the first multi-wavelength light emitting diode chip and the sub-pixel of the second multi-wavelength light emitting diode chip have different light emitting wavelengths. In this way, a pixel unit with multiple light emitting wavelengths can be formed.

[0352] The multi-wavelength light emitting diode chip set provided by the embodiments of the present application, the first multi-wavelength light emitting diode chip and the second multi-wavelength light emitting diode chip are both special-shaped, the first multi-wavelength light emitting diode chip has a protruding area, and the second multi-wavelength light emitting diode chip has a recessed area; the protruding area and the recessed area are shaped to match and fit each other.

[0353] Referring to Figures 81 to 86 The shapes of different multi-wavelength light emitting diode chips can be the same and regular.

[0354] Referring to Figures 75 to 80As shown in the multi-wavelength light emitting diode chip set provided in the embodiment, the first multi-wavelength light emitting diode chip C1 and the second multi-wavelength light emitting diode chip C2 can also be shaped differently, the first multi-wavelength light emitting diode chip C1 has a convex region, and the second multi-wavelength light emitting diode chip C2 has a concave region. The convex region can be a cube, a cone, a hemisphere or other irregular shape, and the convex region and the concave region are shaped to fit together. The number of the convex region and the concave region can be one, two or more, and the number of the convex region and the concave region is equal.

[0355] It should be noted that the first multi-wavelength light emitting diode chip C1 and the second multi-wavelength light emitting diode chip C2 are taken as examples for description. Figure 75 and Figure 76 The first multi-wavelength light emitting diode chip C1 and the second multi-wavelength light emitting diode chip C2 are both stepped, the convex region A2 of the step of the first multi-wavelength light emitting diode chip C1 is opposite to the concave region A1 of the step of the second multi-wavelength light emitting diode chip C2, and the two are fit together in this way. In this way, the first multi-wavelength light emitting diode chip C1, the second multi-wavelength light emitting diode chip C2 and the third multi-wavelength light emitting diode chip C3 are fit together. The sizes of the sub-pixels in the first multi-wavelength light emitting diode chip C1 are the same. In the present application, the convex region and the concave region are fit together by being opposite to each other, which can form a structure similar to a mortise and tenon joint, thereby facilitating the self-alignment assembly of different multi-wavelength light emitting diode chips, reducing the difficulty of alignment, and improving the preparation efficiency and yield.

[0356] Of course, the shape of the multi-wavelength light emitting diode chip can also be a convex shape or a concave shape (as shown in Figure 77 ), or the multi-wavelength light emitting diode chip has an arc-shaped edge (as shown in Figure 78 ), or the multi-wavelength light emitting diode chip has a jagged edge (as shown in Figure 79 ), or the sizes of different sub-pixels in the stepped multi-wavelength light emitting diode chip are different (as shown in Figure 80 ).

[0357] Referring to Figure 81 , the multi-wavelength light emitting diode chip set includes a first multi-wavelength light emitting diode chip C1, a second multi-wavelength light emitting diode chip C2 and a third multi-wavelength light emitting diode chip C3 arranged in sequence. The first multi-wavelength light emitting diode chip C1, the second multi-wavelength light emitting diode chip C2 and the third multi-wavelength light emitting diode chip C3 each include a pixel sub-group.

[0358] The first sub-pixel B and the second sub-pixel G of the first multi-wavelength LED chip C1 (pixel subgroup in the first row and first column), and the first sub-pixel R of the second multi-wavelength LED chip C2 (pixel subgroup in the first row and second column) emit different wavelengths and together form a first pixel unit. Similarly, the second sub-pixel B of the second LED chip C2, and the first sub-pixel G and the second sub-pixel R of the third multi-wavelength LED chip C3 (pixel subgroup in the first row and third column) emit different wavelengths and together form a second pixel unit. The first multi-wavelength LED chip C1, the second multi-wavelength LED chip C2, and the third multi-wavelength LED chip C3 together form a chip group CG1.

[0359] Multiple multi-wavelength light-emitting diode chips are arranged in an array to form multiple chip groups. These multiple chip groups may also include chip group CG2, chip group CG3, and chip group CG4.

[0360] Among them, reference Figure 81 As shown, along the second direction y, in chipset CG1, the sum of the size of the first sub-pixel B of the first multi-wavelength LED chip and the spacing between the first sub-pixel B and the second sub-pixel G of the first multi-wavelength LED chip is the first dimension. The size of the first sub-pixel B of the first multi-wavelength LED chip is a, the spacing between the first sub-pixel B and the second sub-pixel G of the first multi-wavelength LED chip is b, the first dimension = a + b, and the first dimension is the sub-pixel size (sub pitch) of the first sub-pixel B.

[0361] The second dimension is the sum of the size of the second sub-pixel G of the first multi-wavelength LED chip and the distance between the second sub-pixel G and the first sub-pixel R of the second multi-wavelength LED chip. The size of the second sub-pixel G of the first multi-wavelength LED chip is c, and the distance between the second sub-pixel G and the first sub-pixel R of the first multi-wavelength LED chip is d. The second dimension = c + d, and the second dimension is the sub-pixel size of the second sub-pixel G.

[0362] The sum of the size of the first sub-pixel R of the second multi-wavelength LED chip and the distance between the first sub-pixel R and the second sub-pixel B of the second multi-wavelength LED chip is the third dimension. The size of the first sub-pixel R of the second multi-wavelength LED chip is e, the distance between the first sub-pixel R and the second sub-pixel B of the second multi-wavelength LED chip is f, and the third dimension = e + f, where the third dimension is the sub-pixel size of the first sub-pixel R.

[0363] The size of the second sub-pixel B of the second multi-wavelength light emitting diode chip and the sum of the interval between the second sub-pixel B of the second multi-wavelength light emitting diode chip and the first sub-pixel G of the third multi-wavelength light emitting diode chip is a fourth size. The size of the second sub-pixel B of the second multi-wavelength light emitting diode chip is a, the interval between the second sub-pixel B of the second multi-wavelength light emitting diode chip and the first sub-pixel G of the third multi-wavelength light emitting diode chip is g, the fourth size = a + g, and the fourth size is the sub-pixel size of the second sub-pixel B.

[0364] The size of the first sub-pixel G of the third multi-wavelength light emitting diode chip and the sum of the interval between the first sub-pixel G of the third multi-wavelength light emitting diode chip and the second sub-pixel R of the third multi-wavelength light emitting diode chip is a fifth size. The size of the first sub-pixel G of the third multi-wavelength light emitting diode chip is c, the interval between the first sub-pixel G of the third multi-wavelength light emitting diode chip and the second sub-pixel R of the third multi-wavelength light emitting diode chip is h, the fifth size = c + h, and the fifth size is the sub-pixel size of the first sub-pixel G.

[0365] The sum of the interval between the first sub-pixel B of the first multi-wavelength light emitting diode chip and the edge of the chip group CG1, the size of the second sub-pixel R of the third multi-wavelength light emitting diode chip, the interval between the second sub-pixel R of the third multi-wavelength light emitting diode chip and the edge of the chip group CG1, and the interval between the adjacent chip group CG1 and the chip group CG2 is a sixth size.

[0366] The interval between the first sub-pixel B of the first multi-wavelength light emitting diode chip and the edge of the chip group CG1 is k, the size of the second sub-pixel R of the third multi-wavelength light emitting diode chip is e, the interval between the second sub-pixel R of the third multi-wavelength light emitting diode chip and the edge of the chip group CG1 is i, and the interval between the adjacent chip group CG1 and the chip group CG2 is l. The sixth size = k + e + i + l.

[0367] Optionally, the first size, the second size, the third size, the fourth size, the fifth size and the sixth size are all equal; the sum of the first size, the second size and the third size is equal to the sum of the fourth size, the fifth size and the sixth size. The sum of the first size, the second size and the third size can be the pixel size (Pitch) of a pixel unit composed of the first sub-pixel B of the first multi-wavelength light emitting diode chip, the second sub-pixel G of the first multi-wavelength light emitting diode chip and the first sub-pixel R of the second multi-wavelength light emitting diode chip. Similarly, the sum of the fourth size, the fifth size and the sixth size can be the pixel size of a pixel unit composed of the second sub-pixel B of the second multi-wavelength light emitting diode chip, the first sub-pixel G of the third multi-wavelength light emitting diode chip and the second sub-pixel R of the third multi-wavelength light emitting diode chip. Of course, in other embodiments, the first size, the second size, the third size, the fourth size, the fifth size and the sixth size can not be equal.

[0368] With reference to FIG. 1, the chip group CG1 is taken as an example. The chip group CG1 is composed of the first multi-wavelength light emitting diode chip, the second multi-wavelength light emitting diode chip and the third multi-wavelength light emitting diode chip. Figure 81 Along the first direction x, in the chip group CG1, the size of the first sub-pixel B of the first multi-wavelength light emitting diode chip is m. The spacing between the first sub-pixel B of the first multi-wavelength light emitting diode chip of the chip group CG1 and the first sub-pixel B of the first multi-wavelength light emitting diode chip of the chip group CG3 is n.

[0369] The first sub-pixel B, the second sub-pixel G of the first multi-wavelength light emitting diode chip and the first sub-pixel R of the second multi-wavelength light emitting diode chip of the chip group CG1 can constitute a pixel unit. The sum of m and n can be the pixel size of the pixel unit along the first direction x. The sum of a, b, c, d, e and f can be the pixel size of the pixel unit along the second direction y. The sum of m and n can be equal to the sum of a, b, c, d, e and f, or can not be equal.

[0370] With reference to FIG. 1, the chip group CG1 is taken as an example. The chip group CG1 is composed of the first multi-wavelength light emitting diode chip, the second multi-wavelength light emitting diode chip and the third multi-wavelength light emitting diode chip. Figure 82 Along the first direction x, in the chip group CG1, the size of the first sub-pixel B of the first multi-wavelength light emitting diode chip is m1, and the spacing between the first sub-pixel B of the first multi-wavelength light emitting diode chip of the chip group CG1 and the first sub-pixel B of the first multi-wavelength light emitting diode chip of the chip group CG3 is n1.

[0371] In the chip group CG1, the size of the third sub-pixel B of the first multi-wavelength light emitting diode chip is m2, and the spacing between the third sub-pixel B of the first multi-wavelength light emitting diode chip of the chip group CG1 and the first sub-pixel B of the first multi-wavelength light emitting diode chip of the chip group CG2 is n2.

[0372] In the chip group CG2, the size of the first sub-pixel B of the first multi-wavelength light emitting diode chip is m3, and the spacing between the first sub-pixel B of the first multi-wavelength light emitting diode chip of the chip group CG2 and the third sub-pixel B of the first multi-wavelength light emitting diode chip of the chip group CG2 is n3.

[0373] wherein m1+n1, m2+n2 and m3+n3 can be equal or unequal. m1, m2 and m3 can be equal or unequal. n1, n2 and n3 can be equal or unequal.

[0374] The above size limitation is also applicable to Figure 87 and Figure 88 the chip group structure shown.

[0375] In the embodiments of the present application, a plurality of multi-wavelength light emitting diode chips form a plurality of chip groups arranged in an array and a plurality of pixel units arranged in an array. Taking an example of a multi-wavelength light emitting diode chip including one pixel sub-group, one pixel sub-group including two sub-pixels, and a plurality of multi-wavelength light emitting diode chips forming a multi-wavelength light emitting diode chip group, in the composition of a pixel unit, the number of sub-pixels in the pixel unit will be different, which will be described in detail below.

[0376] Referring to Figure 83 and Figure 84 As shown, the multi-wavelength light emitting diode chip group CG1 and the multi-wavelength light emitting diode chip group CG2 each include a multi-wavelength light emitting diode chip C1, a multi-wavelength light emitting diode chip C2 and a multi-wavelength light emitting diode chip C3.

[0377] The formed pixel unit includes an odd number of sub-pixels. For example, referring to Figure 83 As shown, the formed pixel unit PU1, the pixel unit PU2, the pixel unit PU3 and the pixel unit PU4 each include 3 sub-pixels. Referring to Figure 84 As shown, the formed pixel unit PU1 and the pixel unit PU2 each include 5 sub-pixels. In other embodiments, the number of sub-pixels in the pixel unit can also be 7, 9, 11 or more odd numbers.

[0378] wherein in each multi-wavelength light emitting diode chip, the spacing between two adjacent sub-pixels can be d1. The spacing between adjacent chip groups can be d2. The spacing between adjacent pixel units can be d3. The spacing between two adjacent multi-wavelength light emitting diode chips can be d4. When the number of sub-pixels in the pixel unit is an odd number, d1, d2, d3 and d4 are all equal, which can ensure the uniformity of light emission of each multi-wavelength light emitting diode chip.

[0379] Referring to Figure 85 and Figure 86As shown, the multi-wavelength light emitting diode chip set CG1 and the multi-wavelength light emitting diode chip set CG2 also each include the multi-wavelength light emitting diode chip C1, the multi-wavelength light emitting diode chip C2 and the multi-wavelength light emitting diode chip C3.

[0380] The formed pixel unit includes an even number of sub-pixels. For example, referring to Figure 85 As shown, the formed pixel unit PU1, the pixel unit PU2 and the pixel unit PU3 each have 4 sub-pixels. For example, referring to Figure 86 As shown, the formed pixel unit PU1 and the pixel unit PU2 each have 6 sub-pixels. In other embodiments, the number of sub-pixels in a pixel unit can also be 8, 10 or more even numbers.

[0381] When the number of sub-pixels in a pixel unit is an even number, d1, d2, d3 and d4 can each be equal or unequal to each other. That is, d1 can not be equal to d2, d3 or d4; d2 can not be equal to d3 or d4; and d3 can not be equal to d4. Among them, d3 can be determined by the PPI of the full-color display screen prepared by the multi-wavelength light emitting diode chip set, and the flexible adjustment of d3 can realize efficient layout for various applications from watches to large-size televisions.

[0382] In this way, d1 can be smaller than d3, and the pitch of the sub-pixels in the multi-wavelength light emitting diode chip can be flexibly adjusted, so as to adjust the arrangement area of the multi-wavelength light emitting diode chip and avoid waste of the arrangement area. Moreover, d2 can be greater than d1, so as to facilitate the arrangement between the multi-wavelength light emitting diode chips and facilitate assembly. Of course, when d1, d2, d3 and d4 are equal, the arrangement regularity of each sub-pixel, each multi-wavelength light emitting diode chip, each multi-wavelength light emitting diode chip set and each pixel unit can be effectively improved, and the light uniformity can be improved.

[0383] Next, the multi-wavelength light emitting diode chip set formed by the multi-wavelength light emitting diode chips with different arrangements to form a pixel unit and the multi-wavelength light emitting diode chip with double colors and multiple sub-pixels in the present embodiment will be described in detail.

[0384] As a first implementable embodiment, the entire area of two sub-pixels of the first multi-wavelength light emitting diode chip and the entire area of one sub-pixel of the second multi-wavelength light emitting diode chip jointly constitute a pixel unit, and the starting sub-pixel can be any one, such as R, B or G, and the arrangement order of the sub-pixels in the pixel unit can be arbitrarily changed.

[0385] For example, referring to Figures 93 to 100As shown, the light emitting wavelengths of the two sub-pixels of the first multi-wavelength light emitting diode chip and the one sub-pixel of the second multi-wavelength light emitting diode chip are different.

[0386] The entire area of the two sub-pixels of the first multi-wavelength light emitting diode chip and the entire area of the one sub-pixel of the second multi-wavelength light emitting diode chip jointly constitute one pixel unit.

[0387] Referring to Figures 93 to 100 As shown, the multi-wavelength light emitting diode chip group further comprises a third multi-wavelength light emitting diode chip, and the first multi-wavelength light emitting diode chip, the second multi-wavelength light emitting diode chip and the third multi-wavelength light emitting diode chip are arranged in sequence.

[0388] The light emitting wavelengths of the first sub-pixel, the second sub-pixel of the first multi-wavelength light emitting diode chip and the first sub-pixel of the second multi-wavelength light emitting diode chip are different, and jointly constitute a first pixel unit; the light emitting wavelengths of the second sub-pixel of the second multi-wavelength light emitting diode chip, the first sub-pixel and the second sub-pixel of the third multi-wavelength light emitting diode chip are different, and jointly constitute a second pixel unit.

[0389] The first multi-wavelength light emitting diode chip, the second multi-wavelength light emitting diode chip and the third multi-wavelength light emitting diode chip jointly constitute one chip group; wherein a plurality of multi-wavelength light emitting diode chips form a plurality of chip groups arranged in an array.

[0390] Taking one chip comprising two light emitting wavelengths and one pixel unit comprising three sub-pixels of different wavelengths as an example. Referring to Figure 93 As shown, the chip C1, the chip C2 and the chip C3 are arranged directly to form a chip group. Alternatively, referring to Figure 94 As shown, the chip C1, the chip C2 and the chip C3 first form a chip group, and a plurality of chip groups are arranged in an array.

[0391] Referring to Figures 95 to 100 As shown, taking one chip group as an example, different arrangement modes of sub-pixels contained in the chip are taken as examples for illustration, and chip groups of various structures are formed.

[0392] Referring to Figures 101 to 103 As shown, taking two chip groups as an example, different arrangement modes of sub-pixels contained in each chip are taken as examples for illustration, and chip groups of various structures are formed.

[0393] Referring to Figures 104 to 107 As shown, among the at least two sub-pixels of the first multi-wavelength light emitting diode chip and the at least two sub-pixels of the second multi-wavelength light emitting diode chip, the light emitting wavelengths of a part of the sub-pixels are the same; and the at least two sub-pixels of the first multi-wavelength light emitting diode chip and the at least two sub-pixels of the second multi-wavelength light emitting diode chip jointly constitute one pixel unit.

[0394] Take an example of one chip including 2 emitting wavelengths, and one pixel unit including 4 sub-pixels of different wavelengths. Refer to FIG. 1, an example of 1 chip group is taken as an example, and different sub-pixel arrangement modes in the chip are taken as examples to illustrate the chip group in various structures. 4 sub-pixels form 1 pixel unit, which can be 2 sub-pixels R, 2 sub-pixels B, 2 sub-pixels G, and other two wavelengths of sub-pixels, wherein the order and position of the sub-pixels can be exchanged. Figures 104 to 106

[0395] Take an example of one chip including more than 2 emitting wavelengths, and one pixel unit including 5 sub-pixels. Refer to FIG. 2, an example of 1 chip group is taken as an example for illustration. The example can be 2 sub-pixels R + 2 sub-pixels B + 1 sub-pixel G to form 1 pixel unit, or 4 sub-pixels R, 2 sub-pixels B, 2 sub-pixels G to form 1 RGB pixel unit. According to this idea, the size ratio of each sub-pixel can be designed to achieve the desired light mixing effect of the pixel unit. Figure 107

[0396] Take an example of one chip including more than 2 emitting wavelengths, and one pixel unit including 8 sub-pixels. Refer to FIG. 3, an example of 1 chip group is taken as an example for illustration. Figure 108

[0397] Take an example of one chip including more than 2 emitting wavelengths, and one pixel unit including n*2 sub-pixels. Refer to FIG. 4, an example of 1 chip group is taken as an example for illustration. The example takes 1 pixel unit including 4 sub-pixels as an example, which can be 2 sub-pixels R + 1 sub-pixel B + 1 sub-pixel G to form 1 pixel unit. The specific number of sub-pixels and the number of different color sub-pixels are allocated according to the actual situation. Alternatively, 5 sub-pixels can be 2 sub-pixels R + 2 sub-pixels B + 1 sub-pixel G to form 1 pixel unit, 3 sub-pixels R + 1 sub-pixel B + 1 sub-pixel G to form 1 pixel unit, etc. Figure 109 Refer to FIG. 5, each chip can also be formed into a chip group first, and each chip group is arranged in an array.

[0398] Figure 110 Refer to FIG. 6, in the case that the light emitting efficiency of sub-pixels of different wavelengths is not the same, the light emitting efficiency of three wavelengths in the pixel unit can also be ensured to be consistent. Moreover, using multiple sub-pixels of the same wavelength reduces the difficulty of subsequent maintenance and facilitates replacement and repair. For example, 2 sub-pixels R, one of which is broken, can be replaced by another sub-pixel R.

[0399] Refer to FIG. 7, in the case that the light emitting efficiency of sub-pixels of different wavelengths is not the same, the light emitting efficiency of three wavelengths in the pixel unit can also be ensured to be consistent. Moreover, using multiple sub-pixels of the same wavelength reduces the difficulty of subsequent maintenance and facilitates replacement and repair. For example, 2 sub-pixels R, one of which is broken, can be replaced by another sub-pixel R.

[0400] Refer to FIG. 8, in the case that the light emitting efficiency of sub-pixels of different wavelengths is not the same, the light emitting efficiency of three wavelengths in the pixel unit can also be ensured to be consistent. Moreover, using multiple sub-pixels of the same wavelength reduces the difficulty of subsequent maintenance and facilitates replacement and repair. For example, 2 sub-pixels R, one of which is broken, can be replaced by another sub-pixel R. Figures 111 to 115 ​​​​As shown, the partial areas of two sub-pixels of the first multi-wavelength light emitting diode chip and the partial area of one sub-pixel of the second multi-wavelength light emitting diode chip jointly constitute one pixel unit.

[0401] Referring to Figures 111 to 113 As shown, different pixel units can share the sub-pixel B and the sub-pixel R. Referring to Figure 113 As shown, the chips can also be arranged in an array after forming a chip group, so as to share the sub-pixels to form pixel units.

[0402] Referring to Figure 114 As shown, different pixel units can share the sub-pixel G and the sub-pixel R.

[0403] Referring to Figure 115 As shown, different pixel units can share the sub-pixel G and the sub-pixel B.

[0404] Taking the single-chip three-color multi-sub-pixel as an example, the same chips can be periodically arranged and combined.

[0405] Referring to Figure 116 As shown, one chip includes one pixel unit including three-color sub-pixels, and the chips are arranged in an array to form a chip group. The specific periodic arrangement can be that a chips are repeatedly arranged in the horizontal direction and b chips are repeatedly arranged in the vertical direction, to form a chip group including a*b chips. The sum of a and b is a positive integer greater than or equal to 2, and a and b can be equal or not equal.

[0406] Referring to Figure 117 As shown, the pixel units formed by the plurality of chips can also be in a special-shaped structure, which can be a triangular shape as shown or other shapes. The specific periodic arrangement can be that a chips are repeatedly arranged in the horizontal direction and b chips are repeatedly arranged in the vertical direction, to form a chip group including a*b chips.

[0407] Referring to Figure 118 As shown, one chip can also include four sub-pixels. The specific periodic arrangement can be that a chips are repeatedly arranged in the horizontal direction and b chips are repeatedly arranged in the vertical direction, to form a chip group including a*b chips.

[0408] Referring to Figure 119 As shown, one chip can also include eight sub-pixels. The specific periodic arrangement can be that a chips are repeatedly arranged in the horizontal direction and b chips are repeatedly arranged in the vertical direction, to form a chip group including a*b chips.

[0409] Referring to Figure 120As shown, one chip includes 8 sub-pixels, and some sub-pixels can be shared, for example, sub-pixel B and sub-pixel R are shared, and the specific periodic arrangement can be a transverse a-chip repeating arrangement and a vertical b-chip repeating arrangement, forming a chip group including a*b chips. The shared sub-pixels can also be sub-pixel B and sub-pixel G, or sub-pixel R and sub-pixel G.

[0410] In a third aspect, the embodiments of the present application provide a display module. The display module includes a driving backboard and the above-mentioned multi-wavelength light-emitting diode chip group, and the multi-wavelength light-emitting diode chip group is arranged on the driving backboard and electrically connected with the driving backboard.

[0411] The driving backboard can be a TFT (Thin Film Transistor) driving backboard or a CMOS (Complementary Metal Oxide Semiconductor) driving backboard.

[0412] As a first implementable embodiment, refer to Figure 123 As shown, the multi-wavelength light-emitting diode chip group has a plurality of multi-wavelength light-emitting diode chip groups arranged in an array on the driving backboard 200. The driving backboard 200 can provide driving current for the plurality of multi-wavelength light-emitting diode chip groups, thereby driving the plurality of multi-wavelength light-emitting diode chip groups to emit light. Figure 123 As shown in FIG. 2, the multi-wavelength light-emitting diode chip group CG1 and the multi-wavelength light-emitting diode chip group CG2 are arranged on the driving backboard 200. In some embodiments, there can be 3, 4 or more multi-wavelength light-emitting diode chip groups, and the plurality of multi-wavelength light-emitting diode chip groups are arranged in an array.

[0413] The multi-wavelength light-emitting diode chip group CG1 and the multi-wavelength light-emitting diode chip group CG2 each include a multi-wavelength light-emitting diode chip C1, a multi-wavelength light-emitting diode chip C2 and a multi-wavelength light-emitting diode chip C3. Each multi-wavelength light-emitting diode chip includes a pixel sub-group, and the pixel sub-group includes two sub-pixels. In some embodiments, the number of multi-wavelength light-emitting diode chips in the multi-wavelength light-emitting diode chip group, and the number of pixel sub-groups and sub-pixels in the multi-wavelength light-emitting diode chip can be adjusted, and the present embodiment does not limit this.

[0414] As a second implementable embodiment, refer to Figure 124 As shown, the driving backboard 200 includes a driving substrate 201 and a plurality of driving units 202, one driving unit 202 is electrically connected with one multi-wavelength light-emitting diode chip group, and the plurality of driving units 202 are electrically connected with the driving substrate 201. The driving unit 202 and the driving substrate 201 can also be TFT and CMOS.

[0415] One driving unit 202 and one multi-wavelength LED chip group can form one micro display module, Figure 124 The micro display module DBM1 and the micro display module DBM2 are shown in the figure, both of which are electrically connected to the driving substrate 201, which can provide driving current for the driving unit 202 in the micro display module, so as to drive the multi-wavelength LED chip group to emit light through the driving unit 202. In some embodiments, the number of micro display modules can be 3, 4, 5 or more, and the specific value of the number is not limited in the embodiment.

[0416] Figure 124 The multi-wavelength LED chip group CG1 and the multi-wavelength LED chip group CG2 are electrically connected to two different driving units 202 respectively, and the two driving units 202 are electrically connected to the driving substrate 201. The multi-wavelength LED chip group CG1 and the multi-wavelength LED chip group CG2 each include a multi-wavelength LED chip C1, a multi-wavelength LED chip C2 and a multi-wavelength LED chip C3. Each multi-wavelength LED chip includes a pixel sub-group, and the pixel sub-group includes two sub-pixels. In the embodiment, the number of multi-wavelength LED chip groups, the number of multi-wavelength LED chips in the multi-wavelength LED chip group, and the number of pixel sub-groups and sub-pixels in the multi-wavelength LED chip can be adjusted, and the embodiment is not limited in this regard.

[0417] In a fourth aspect, the embodiment of the present application provides a full-color display screen, which can be packaged by using the display module described above.

[0418] In a fifth aspect, the embodiment of the present application provides a light-emitting device, which includes the multi-wavelength LED chip described above.

[0419] At least one fluorescent layer is arranged on the surface of the light-emitting side of the multi-wavelength LED chip, or at least one quantum dot color conversion layer is arranged on the surface of the light-emitting side of the multi-wavelength LED chip, which is used to convert at least part of the light of at least one color emitted by the multi-wavelength LED chip into light of another color or multiple colors.

[0420] Taking the fluorescent material and the quantum dot material as an example, the color conversion material can be added in the encapsulating glue and directly placed on the light-emitting surface of the chip by coating or other methods, or a color conversion film can be formed and attached to the light-emitting surface of the chip.

[0421] The color conversion material can be one or more. When there are multiple color conversion materials, the multiple color conversion materials can be independently added into the encapsulation glue, form multiple encapsulation glues, and then be placed on the light-emitting surface of the chip. Alternatively, the multiple color conversion materials can be mixed and added into the encapsulation glue, form one encapsulation glue, and then be placed on the light-emitting surface of the chip.

[0422] Similarly, the multiple color conversion materials can form multiple independent monochromatic color conversion films, or form one polychromatic color conversion film, or form several monochromatic color conversion films, or form several polychromatic color conversion films.

[0423] In this way, the light-emitting device can provide light with a more abundant number of wavelengths. The light-emitting device can be a backlight device or a lighting device. The lighting device can include the multiple-wavelength light-emitting diode chip described above. The lighting device can be an indoor lighting device, such as a ceiling lamp or a table lamp, an outdoor lighting device, such as a street lamp or a landscape lamp, or an industrial lighting device, such as an emergency lamp or an explosion-proof lamp.

[0424] In a sixth aspect, an electronic device is provided, which includes the full-color display screen described above. The electronic device can be a television, an electronic watch, an electronic book, a desktop computer, a notebook computer, a tablet computer, a mobile phone, an AR device (Augmented Reality), or a VR device (Virtual Reality), etc. When the multiple-wavelength light-emitting diode chip of the electronic device includes an ultraviolet light pixel, the electronic device can also be an ultraviolet curing lamp or an ultraviolet detection lamp, etc.

[0425] In the description of the embodiments of the present application, it should be understood that, unless specifically defined and limited otherwise, the terms "mount", "connect", "connection" should be interpreted broadly, for example, can be fixedly connected, or indirectly connected through an intermediate medium, or the internal communication of two elements or the interaction relationship between two elements. For those skilled in the art, the specific meaning of the above terms in the present application can be understood according to the specific circumstances. The terms "upper", "lower", "front", "back", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc. indicate the orientation or positional relationship shown in the drawings, and are only used to facilitate the description of the present application and simplify the description, and do not indicate or imply that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as a limitation on the present application. In the description of the present application, the meaning of "multiple" is two or more, unless otherwise specified.

[0426] The terms "first", "second", "third", "fourth" and the like in the description and in the claims of the present application, if any, are used for distinguishing between similar elements and not necessarily for describing a sequential or chronological order. It is to be understood that the use of these terms herein is to be construed to cover the embodiments of the application whether or not the embodiments are described with the same term. For example, a reference to a "first" element is a reference to one element first described and is not necessarily an absolute reference to the timing of the elements. The terms "comprise", "have" and any variations thereof are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises, has or includes a list of elements is not necessarily limited to those elements, but can include other elements not expressly listed or inherent to such process, method, article, or apparatus.

[0427] Finally, it should be noted that the above-described embodiments are merely intended to illustrate the technical solutions of the present application, but not to limit the same; even though the present application has been described in detail with reference to the above embodiments, those skilled in the art should understand that the technical solutions recorded in the above embodiments can still be modified, or some or all of the technical features can be replaced by equivalents; and these modifications or replacements do not cause the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present application.

Claims

1. A multi-wavelength light emitting diode chip, characterized by, Comprise: N-type electrode; P-type electrode; N light-emitting layers, the N light-emitting layers are stacked between the N-type electrode and the P-type electrode and are electrically connected with the N-type electrode and the P-type electrode respectively; The sum of the thicknesses of the N light-emitting layers is less than the hole diffusion length of the P-type electrode; the number of light-emitting wavelengths of the N light-emitting layers is n; N and n are both positive integers greater than or equal to 2; An electric field is formed between the N-type electrode and the P-type electrode; The multi-wavelength light-emitting diode chip is configured to emit light of different numbers of wavelengths according to different voltage values or current values of the electric field, and the number of wavelengths is greater than or equal to 1.

2. The multi-wavelength light emitting diode chip of claim 1, wherein, The plurality of light-emitting layers form m sub-pixels, and m is a positive integer greater than or equal to 2; m is greater than or equal to n; Along a direction perpendicular to the N-type electrode to the P-type electrode, the m sub-pixels are arranged in an array.

3. The multi-wavelength light emitting diode chip of claim 2, wherein, Along a direction perpendicular to the N-type electrode to the P-type electrode, the m sub-pixels are arranged at intervals. An isolation structure is arranged between adjacent sub-pixels.

4. The multi-wavelength light emitting diode chip of claim 3, wherein, The isolation structure comprises a trench; or, the isolation structure comprises a trench and an isolation material arranged in the trench; or, the isolation structure is an ion implantation layer.

5. The multi-wavelength light emitting diode chip according to any one of claims 1-4, wherein, Further comprise: An N-type semiconductor layer is stacked on a side of the light-emitting layer close to the N-type electrode and is connected with the N-type electrode; The light-emitting layer is electrically connected with the N-type electrode through the N-type semiconductor layer; A P-type semiconductor layer is stacked on a side of the light-emitting layer close to the P-type electrode and is connected with the P-type electrode; the light-emitting layer is electrically connected with the P-type electrode through the P-type semiconductor layer.

6. The multi-wavelength light emitting diode chip of claim 5, wherein, Further comprise a light modulation layer, the light modulation layer is arranged on a side of the N-type electrode away from the light-emitting layer, or the light modulation layer is arranged on a side of the P-type electrode away from the light-emitting layer.

7. The multi-wavelength light emitting diode chip of claim 6, wherein, The light modulation layer comprises a filter or a Bragg reflection layer.

8. The multi-wavelength light emitting diode chip of any one of claims 1-4, wherein, The light-emitting layer is configured to: The greater the voltage value or current value of the electric field, the greater the number of wavelengths of light emitted by the light-emitting layer; When the voltage value or current value of the electric field is the smallest, the light-emitting layer emits light with one wavelength.

9. The multi-wavelength light emitting diode chip according to claim 3 or 4, characterized in that The N-type electrode comprises m sub-N-type electrodes which are separate from each other; the N-type semiconductor layer comprises m sub-N-type semiconductor layers which are separate from each other; On a side of the m sub-pixels close to the N-type semiconductor layer, the m sub-pixels are in one-to-one correspondence with the m sub-N-type semiconductor layers; The m sub-N-type semiconductor layers are in one-to-one correspondence with the m sub-N-type electrodes.

10. The multi-wavelength light emitting diode chip of claim 9, wherein, Part of the isolation structure extends into the P-type semiconductor layer.

11. The multi-wavelength light emitting diode chip according to claim 3 or 4, characterized in that The P-type electrode comprises m sub-P-type electrodes which are separate from each other; the P-type semiconductor layer comprises m sub-P-type semiconductor layers which are separate from each other; On a side of the m sub-pixels close to the P-type semiconductor layer, the m sub-pixels are in one-to-one correspondence with the m sub-P-type semiconductor layers; The m sub-P-type semiconductor layers are in one-to-one correspondence with the m sub-P-type electrodes.

12. The multi-wavelength light emitting diode chip of claim 11, wherein, Part of the isolation structure extends into the N-type semiconductor layer.

13. The multi-wavelength light emitting diode chip of claim 6, wherein, The light modulation layer comprises a plurality of sub-light modulation layers, and each of the sub-light modulation layers corresponds to one of the sub-pixels except the sub-pixel with the maximum light emission wavelength.

14. The multi-wavelength light emitting diode chip of any of claims 2-4, wherein, The m sub-pixels form x pixel subgroups; x is a positive integer greater than or equal to 1.

15. The multi-wavelength light emitting diode chip of claim 14, wherein, When x is greater than 1, the x pixel subgroups are arranged in an array along a direction perpendicular to the N-type electrode to the P-type electrode.

16. The multi-wavelength light emitting diode chip of claim 14, wherein, One pixel subgroup comprises at least two sub-pixels. In the same pixel subgroup, at least part of the sub-pixels have different light emission wavelengths.

17. The multi-wavelength light emitting diode chip of claim 16, wherein, The number of light emission wavelengths of the multi-wavelength light emitting diode chip is 2.

18. The multi-wavelength light emitting diode chip of claim 17, wherein, In the same pixel subgroup, the light emission wavelengths of the sub-pixels are all different. The number of sub-pixels in the pixel subgroup is n, and n is equal to 2, and the number of sub-pixels of the multi-wavelength light emitting diode chip is 2x.

19. The multi-wavelength light emitting diode chip of claim 17, wherein, In the same pixel subgroup, part of the sub-pixels have the same light emission wavelength. The number of sub-pixels in the pixel subgroup is n, and n is greater than 2, and the number of sub-pixels of the multi-wavelength light emitting diode chip is nx.

20. The multi-wavelength light emitting diode chip of claim 16, wherein, The number of light emission wavelengths of the multi-wavelength light emitting diode chip is greater than or equal to 3.

21. The multi-wavelength light emitting diode chip of claim 20, wherein, In the same pixel subgroup, the light emission wavelengths of the sub-pixels are all different, and the number of sub-pixels in the pixel subgroup is n. The n sub-pixels form one pixel unit, and the number of sub-pixels of the multi-wavelength light emitting diode chip is nx. Or, n+1 sub-pixels form one pixel unit, and the number of sub-pixels of the multi-wavelength light emitting diode chip is (n+1)x. Or, n+y sub-pixels form one pixel unit, and the number of sub-pixels of the multi-wavelength light emitting diode chip is (n+y)x; wherein y is a positive integer greater than or equal to 2. Or, at least part of the pixel units share 2 sub-pixels, and the number of sub-pixels of the multi-wavelength light emitting diode chip is (2n-2)x.

22. The multi-wavelength light emitting diode chip of any of claims 2-4, wherein, The following limitations at least satisfy one of the following: The size of the multi-wavelength light emitting diode chip is greater than or equal to 50 microns; The shape of the multi-wavelength light emitting diode chip is any one of a rectangle, a square, a circle, an ellipse, a triangle, a rhombus, a parallelogram, and a polygon with more than four sides; The size of the sub-pixel ranges from 0.001 microns to 200 microns; The shape of the sub-pixel is any one of a rectangle, a square, a circle, an ellipse, a triangle, a rhombus, a parallelogram, and a polygon with more than four sides; The shapes of different sub-pixels are the same or different; The sizes of different sub-pixels are equal or different.

23. The multi-wavelength light emitting diode chip of claim 5, wherein, It also comprises a buffer layer, a current spreading layer, a reflective layer, and a first insulating layer. The buffer layer and the N-type semiconductor layer are stacked, the light emitting layer is arranged on the side of the N-type semiconductor layer away from the buffer layer, and the P-type semiconductor layer is arranged on the side of the light emitting layer away from the buffer layer. The current spreading layer is in contact with the P-type semiconductor layer on the side away from the buffer layer, the N-type electrode is in contact with the N-type semiconductor layer, and the P-type electrode is in contact with the P-type semiconductor layer and the current spreading layer; The first insulating layer is arranged on the side of the current spreading layer away from the buffer layer; The reflective layer is arranged on the side of the buffer layer away from the light-emitting layer, or the reflective layer is arranged on the side of the first insulating layer away from the buffer layer, and the side of the reflective layer away from the buffer layer is further provided with a second insulating layer.

24. The multi-wavelength light emitting diode chip of claim 23, wherein, Further comprising a substrate, which is arranged on the side of the buffer layer away from the light-emitting layer; When the reflective layer is arranged on the side of the buffer layer away from the light-emitting layer, the reflective layer is arranged on the side of the substrate away from the buffer layer.

25. The multi-wavelength light emitting diode chip of claim 5, wherein, Further comprising a bonding substrate, a binding layer and a reflective layer; The bonding substrate and the binding layer are arranged on the P-type electrode in sequence, the P-type semiconductor layer is arranged on the side of the binding layer away from the bonding substrate and is in contact with the binding layer; The light-emitting layer is arranged on the side of the P-type semiconductor layer away from the bonding substrate, the N-type semiconductor layer is arranged on the side of the light-emitting layer away from the bonding substrate, and the N-type electrode is in contact with the side of the N-type semiconductor layer away from the bonding substrate; The reflective layer is arranged on the side of the P-type semiconductor layer close to the bonding substrate.

26. The multi-wavelength light emitting diode chip of claim 5, wherein, N light-emitting layers comprise: A red light-emitting layer, a green light-emitting layer and a blue light-emitting layer, which are arranged in layers between the N-type semiconductor layer and the P-type semiconductor layer.

27. A multi-wavelength light emitting diode chip set, comprising: A plurality of multi-wavelength light-emitting diode chips as claimed in any one of claims 1-26, wherein the plurality of multi-wavelength light-emitting diode chips are arranged in an array; Two adjacent multi-wavelength light-emitting diode chips comprise a first multi-wavelength light-emitting diode chip and a second multi-wavelength light-emitting diode chip, and a part of the sub-pixels of the first multi-wavelength light-emitting diode chip and a part of the sub-pixels of the second multi-wavelength light-emitting diode chip together form a pixel unit.

28. The multi-wavelength light emitting diode chip set of claim 27, wherein, The two sub-pixels of the first multi-wavelength light-emitting diode chip and the one sub-pixel of the second multi-wavelength light-emitting diode chip have different light-emitting wavelengths.

29. The multi-wavelength light emitting diode chip set of claim 28, wherein, The entire area of the two sub-pixels of the first multi-wavelength light-emitting diode chip and the entire area of the one sub-pixel of the second multi-wavelength light-emitting diode chip together form a pixel unit.

30. The multi-wavelength light emitting diode chip set of claim 28, wherein, A part of the area of the two sub-pixels of the first multi-wavelength light-emitting diode chip and a part of the area of the one sub-pixel of the second multi-wavelength light-emitting diode chip together form a pixel unit.

31. The multi-wavelength light emitting diode chip set of claim 27, wherein, In the at least two sub-pixels of the first multi-wavelength light-emitting diode chip and the at least two sub-pixels of the second multi-wavelength light-emitting diode chip, a part of the sub-pixels have the same light-emitting wavelength. And the at least two sub-pixels of the first multi-wavelength light-emitting diode chip and the at least two sub-pixels of the second multi-wavelength light-emitting diode chip together form a pixel unit.

32. The multi-wavelength light emitting diode chip set of any of claims 27-31, wherein, The first multi-wavelength light emitting diode chip and the second multi-wavelength light emitting diode chip are both shaped, the first multi-wavelength light emitting diode chip has a convex area, and the second multi-wavelength light emitting diode chip has a concave area; The convex area and the concave area are shaped to match and fit each other.

33. The multi-wavelength light emitting diode chip set of claim 27, wherein, Further comprising a third multi-wavelength light emitting diode chip, the first multi-wavelength light emitting diode chip, the second multi-wavelength light emitting diode chip and the third multi-wavelength light emitting diode chip are arranged in sequence and adjacent to each other; The first sub-pixel, the second sub-pixel of the first multi-wavelength light emitting diode chip and the first sub-pixel of the second multi-wavelength light emitting diode chip have different light emitting wavelengths and together form a first pixel unit; The second sub-pixel of the second multi-wavelength light emitting diode chip, the first sub-pixel and the second sub-pixel of the third multi-wavelength light emitting diode chip have different light emitting wavelengths and together form a second pixel unit; The first multi-wavelength light emitting diode chip, the second multi-wavelength light emitting diode chip and the third multi-wavelength light emitting diode chip together form a chip group; Among them, a plurality of multi-wavelength light emitting diode chips form a plurality of chip groups arranged in an array.

34. The multi-wavelength light emitting diode chip set of claim 27, wherein, A plurality of multi-wavelength light emitting diode chips form a plurality of chip groups arranged in an array and a plurality of pixel units arranged in an array; in the same multi-wavelength light emitting diode chip, the spacing between adjacent sub-pixels is d1; the spacing between adjacent chip groups is d2; the spacing between adjacent pixel units is d3; and the spacing between adjacent multi-wavelength light emitting diode chips is d4; When the pixel unit includes an odd number of sub-pixels, d1, d2, d3 and d4 are all equal; When the pixel unit includes an even number of sub-pixels, d1, d2, d3 and d4 are all equal, or d1, d2, d3 and d4 are all different from each other.

35. A display module, characterized by It comprises a driving backboard and a multi-wavelength light emitting diode chip group according to any one of claims 27-34, and the multi-wavelength light emitting diode chip group is arranged on the driving backboard and electrically connected with the driving backboard.

36. The display module of claim 35, wherein, The multi-wavelength light emitting diode chip group has a plurality of multi-wavelength light emitting diode chips; A plurality of multi-wavelength light emitting diode chip groups are arranged in an array on the driving backboard; Or, the driving backboard comprises a driving substrate and a plurality of driving units, one driving unit corresponds to one multi-wavelength light emitting diode chip group and is electrically connected with the multi-wavelength light emitting diode chip group, and a plurality of driving units are electrically connected with the driving substrate.

37. A light-emitting device, characterized in that, It comprises: The multi-wavelength light emitting diode chip according to any one of claims 1-26; At least one fluorescent layer arranged on the surface of the light emitting side of the multi-wavelength light emitting diode chip, or at least one quantum dot color conversion layer arranged on the surface of the light emitting side of the multi-wavelength light emitting diode chip, for converting at least part of the light of at least one color emitted by the multi-wavelength light emitting diode chip into light of another color or multiple colors.

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