Substrate processing apparatus and substrate processing method

Abstract

An apparatus for processing a substrate is provided. The apparatus includes: a first body; a second body combined with the first body to define a processing space; a lifting unit for moving the second body between an open position and a closed position; and a first substrate support and a second substrate support, the first substrate support being mounted in the first body and the second substrate support being mounted in the second body, in which a groove is formed in an edge region of a lower wall of the second body, and when the second body is moved to the closed position, the groove is formed in the edge region of the lower wall of the second body. The first substrate support is located in the recess. According to an embodiment of the present invention, when the substrate is dried, the substrate can be uniformly processed by uniformly forming a flow of fluid on the substrate.

Description

Technical Field

[0001] The present invention relates to a substrate processing apparatus, and more particularly, to an apparatus for processing a substrate using a supercritical fluid. Background Technology

[0002] As design rules for integrated circuit devices become increasingly restrictive, there is a need for processes to form deep and narrow patterns with high aspect ratios, as well as the resulting cleaning and drying processes. In particular, methods have been proposed for using supercritical fluids to perform predetermined processes, such as etching, cleaning, and drying, on substrates with high aspect ratio patterns.

[0003] In one example, the cleaning process is performed by cleaning the upper surface of the substrate with volatile organic compounds, and the drying process is performed by supplying a fluid containing supercritical carbon dioxide (CO2), or by supplying a gaseous fluid and then changing the phase to a supercritical state to remove the volatile organic compounds remaining on the substrate.

[0004] In a typical drying process, fluid is supplied from the lower part of the chamber, and the supplied fluid flows from the edge region of the substrate to the center region. In order to dry the substrate uniformly, the fluid must flow evenly across the substrate.

[0005] Figure 1 This is a schematic diagram illustrating the processing of a substrate in a typical drying chamber, and Figure 2 It schematically shows the fluid in Figure 1 A schematic diagram of flow on a substrate. (Reference) Figure 1 and Figure 2 When the fluid stored in the storage source 1 is supplied to the drying chamber 3 via the lower supply line 2, and the substrate support 4 supports the edge region of the substrate W on one side of the substrate W, the problem is that the flow of the fluid is obstructed and the fluid cannot flow uniformly on the substrate. Summary of the Invention

[0006] This invention aims to provide a substrate processing apparatus and a substrate processing method that can uniformly dry the substrate during the drying process.

[0007] The present invention also aims to provide a substrate processing apparatus and a substrate processing method that can uniformly form a fluid flow on the substrate during the drying process.

[0008] The present invention also aims to provide a substrate processing apparatus and a substrate processing method, wherein when the substrate is dried, the support member supporting the edge region of the substrate does not obstruct the flow of fluid.

[0009] The problems to be solved by the present invention are not limited to those described above, and those skilled in the art will clearly understand from the following description any problems not mentioned.

[0010] An exemplary embodiment of the present invention is an apparatus for processing a substrate, the apparatus comprising: a chamber for providing a processing space for processing the substrate; a fluid supply unit for supplying fluid into the processing space; a discharge unit for discharging fluid from the processing space; a first substrate support placed in the processing space, and a robot for transporting the substrate placing the substrate on the first substrate support; and a second substrate support placed in the processing space and supporting the substrate while it is being processed in the processing space, wherein the chamber comprises: a first body; a second body combined with the first body to define the processing space; and a lifting member for moving the second body relative to the first body, and the lifting member moving the second body between an open position and a closed position, the open position being a position in which a substrate is loaded into or unloaded from the processing space by opening the processing space, and the closed position being a position in which the processing space is sealed for processing the substrate, the first substrate support comprising: a plurality of fixed rods mounted in the chamber; and a bracket mounted on the rods and on which the substrate is placed, the second substrate support comprising a support plate opposite to the substrate supported on the first substrate support, and the bracket being located below the support plate when the second body can be in the closed position.

[0011] According to an exemplary embodiment of the present invention, a first substrate support is fixedly connected to a first body, a second substrate support is fixedly connected to a second body, and the first body may be located above the second body.

[0012] According to an exemplary embodiment of the present invention, a groove is formed in the region corresponding to the bracket on the lower wall of the chamber, and in the closed position, the bracket may be located within the groove.

[0013] According to an exemplary embodiment of the present invention, the bottom surface adjacent to the processing space in the lower wall of the chamber includes: a central base surface in the central region of the bottom surface; a groove base surface, which is the bottom surface of the groove; and a floor surface disposed above the base surface in the region between the central base surface and the groove base surface, and the fluid supply unit may include a fluid supply line that supplies fluid to a lower supply port formed on the central base surface.

[0014] According to an exemplary embodiment of the present invention, the second substrate support can be mounted on a floor surface.

[0015] According to an exemplary embodiment of the present invention, the second substrate support is larger than the outer diameter of the central substrate surface and may be smaller than the inner diameter of the groove substrate surface.

[0016] According to an exemplary embodiment of the present invention, the region in which the second substrate support supports the substrate may be a region further inward than the region in which the first substrate support supports the substrate.

[0017] According to an exemplary embodiment of the present invention, when viewed from above, the second substrate support may be located outside the first substrate support.

[0018] According to an exemplary embodiment of the present invention, the support includes: a base; a plurality of extension portions extending from the base; and a plurality of support pins respectively mounted on the extension portions, and a substrate is placed on the plurality of support pins, and in a closed position, the upper end of the support pins may be lower than the support plate.

[0019] According to an exemplary embodiment of the present invention, when viewed from above, the diameter of the support plate can be set to be smaller than the diameter of the circle passing through the support pin.

[0020] An exemplary embodiment of the present invention is a method for processing a substrate, the method comprising: a loading operation, wherein a transfer robot loads a substrate into a processing space defined by an upper body and a lower body in an open state; a closing operation, wherein, after the loading operation, the processing space is closed by moving either the upper body or the lower body relative to the other; and a processing operation, wherein, after the closing operation, the substrate is processed by supplying fluid to the processing space, wherein, in the loading operation, the transfer robot places the substrate on a first substrate support coupled to the upper body, and in the processing operation, the substrate placed on the first substrate support can be transferred to a second substrate support coupled to the lower body for processing.

[0021] According to an exemplary embodiment of the present invention, a substrate can be transferred from a first substrate support to a second substrate support by moving one of the upper body and the lower body relative to the other.

[0022] According to an exemplary embodiment of the present invention, the transfer of the substrate from the first substrate support to the second substrate support can be performed during a shutdown operation.

[0023] According to an exemplary embodiment of the present invention, during the loading operation, the position of the first substrate support is higher than that of the second substrate support, and during the processing operation, the position of the first substrate support may be lower than that of the second substrate support.

[0024] According to an exemplary embodiment of the present invention, during the closing operation, the first substrate support may be located in a groove formed in the lower wall of the lower body.

[0025] According to an exemplary embodiment of the present invention, a second substrate support may be mounted on a bottom surface extending from the upper portion of the groove.

[0026] According to an exemplary embodiment of the present invention, during processing, fluid is supplied through a lower supply port formed in the lower wall of the chamber, and the lower supply port may be formed in the central region of the lower wall of the chamber.

[0027] An exemplary embodiment of the present invention is an apparatus for processing a substrate, the apparatus comprising: a chamber for providing a processing space for processing the substrate; a fluid supply unit for supplying fluid into the processing space; a discharge unit for discharging fluid from the processing space; a first substrate support placed in the processing space, and a robot for transporting the substrate placing the substrate on the first substrate support; and a second substrate support placed in the processing space and supporting the substrate while it is being processed in the processing space, wherein the chamber comprises: an upper body; a lower body combined with the upper body to define the processing space; and a lifting member for moving the lower body relative to the upper body. The lower body moves between an open position and a closed position. The open position is where a substrate is loaded into or unloaded from the processing space by opening the processing space, and the closed position is where the processing space is sealed to process the substrate. A first substrate support disposed on the upper body includes: a plurality of rods mounted on the upper body; and a bracket mounted on the rods and on which the substrate is placed. A second substrate support mounted on the lower body includes a support plate opposite to the substrate supported on the first substrate support. A groove is formed in a region of the lower wall of the lower body corresponding to the bracket, and the bracket is located within the groove in the closed position and may be located below the support plate.

[0028] According to an exemplary embodiment of the present invention, the bottom surface adjacent to the processing space in the lower wall of the chamber includes: a floor surface formed in an intermediate region, the intermediate region being the region between the central region of the bottom surface and the base surface, the base surface being the bottom surface of the groove, and the floor surface being configured to be higher than the base surface; a fluid supply unit including a fluid supply line supplying fluid to a lower supply port formed in the central region of the lower wall of the chamber; and a second substrate support being larger than the outer diameter of the central base surface and smaller than the inner diameter of the groove base surface, and being mountable on the floor surface.

[0029] According to an exemplary embodiment of the present invention, the support includes: a base; a plurality of extensions extending from the base; and a plurality of support pins respectively mounted on the extensions, and a substrate is placed on the plurality of support pins, and when viewed from above, the diameter of the support plate is set to be smaller than the diameter of the circle passing through the support pins, and in the closed position, the upper end of the support pin may be lower than the support plate.

[0030] According to an exemplary embodiment of the present invention, when the substrate is dried, the substrate can be dried uniformly.

[0031] According to an exemplary embodiment of the present invention, when the substrate is dried, the flow of fluid on the substrate can be uniformly shaped.

[0032] The effects of this disclosure are not limited to those described above, and those skilled in the art will clearly understand any effects not mentioned based on this specification and the accompanying drawings. Attached Figure Description

[0033] Various features and advantages of the non-limiting exemplary embodiments of this specification will become apparent upon reading the detailed description in conjunction with the accompanying drawings. The drawings are for illustrative purposes only and should not be construed as limiting the scope of the claims. Unless explicitly stated otherwise, the drawings are not considered to be drawn to scale. Various dimensions in the drawings may be enlarged for clarity.

[0034] Figure 1 This is a schematic diagram illustrating the processing of substrates in a typical drying chamber.

[0035] Figure 2 It is shown schematically. Figure 1 A diagram showing the flow of fluid on a substrate.

[0036] Figure 3 This is a diagram schematically illustrating an exemplary embodiment of the substrate processing apparatus of the present invention.

[0037] Figure 4 It is shown schematically. Figure 2 A figure showing an exemplary embodiment of the liquid handling chamber.

[0038] Figure 5 This is a graph showing the phase transition curve of carbon dioxide.

[0039] Figure 6 It is shown schematically. Figure 2 A figure showing an exemplary embodiment of the drying chamber.

[0040] Figure 7 This is a schematic diagram showing the second body in the open position during the loading operation.

[0041] Figure 8 This is a schematic diagram showing the second body in the closed position during the closing operation.

[0042] Figure 9 This is a schematic diagram illustrating the flow of fluid on a substrate during a processing operation.

[0043] Figure 10 It is shown schematically. Figure 2A figure showing another exemplary embodiment of the drying chamber. Detailed Implementation

[0044] Exemplary embodiments will now be described more fully with reference to the accompanying drawings. Exemplary embodiments are provided so that this disclosure will be thorough and will fully convey the scope to those skilled in the art. Numerous specific details, such as examples of particular components, apparatuses, and methods, are set forth to provide a thorough understanding of embodiments of this disclosure. It will be apparent to those skilled in the art that specific details are not required, exemplary embodiments may be embodied in many different forms, and neither should be construed as limiting the scope of this disclosure. In some exemplary embodiments, well-known processes, well-known apparatus structures, and well-known techniques have not been described in detail.

[0045] The terminology used herein is for the purpose of describing particular exemplary embodiments only and is not restrictive. As used herein, the singular form may also be intended to include the plural form unless the context clearly indicates otherwise. The terms “comprising,” “including,” and “having” are inclusive and therefore specify the presence of said features, integers, steps, operations, elements, and / or components, but do not exclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and / or groups thereof. Unless specifically identified as an order of execution, the method steps, processes, and operations described herein should not be construed as requiring them to be performed in the particular order discussed or described. It should also be understood that additional or alternative steps may be employed.

[0046] When an element or layer is referred to as “on,” “joined,” “connected,” or “linked” to another element or layer, it may be directly “on,” “joined,” “connected,” or “linked” to the other element or layer, or there may be intermediate elements or layers. Conversely, when an element is referred to as “directly on,” “directly joined to,” “directly connected to,” or “directly linked to” to another element or layer, there may be no intermediate elements or layers. Other words used to describe relationships between elements should be interpreted in a similar manner (e.g., “between” vs. “directly between,” “adjacent” vs. “directly adjacent,” etc.). As used herein, the term “and / or” includes any and all combinations of one or more of the related listed items.

[0047] Although the terms first, second, third, etc., may be used herein to describe various elements, components, regions, layers, and / or segments, these elements, components, regions, layers, and / or segments should not be limited by these terms. These terms may be used only to distinguish one element, component, region, layer, and / or segment from another. Unless the context clearly indicates otherwise, terms such as “first,” “second,” and other numerical terms used herein do not imply sequence or order. Therefore, the first element, component, region, layer, or segment discussed below may be referred to as a second element, component, region, layer, or segment without departing from the teachings of the exemplary embodiments.

[0048] To facilitate the description of the relationship between one element or feature and another element or feature as shown in the figures, spatial relative terms such as “inside,” “outside,” “below,” “below,” “below,” “above,” and “on top” may be used herein. In addition to the orientations shown in the figures, spatial relative terms may be intended to cover different orientations of the device in use or operation. For example, if the device in the figures is flipped, an element described as “below” or “below” other elements or features will be oriented “on top” of other elements or features. Thus, the example term “below” can include both above and below orientations. The device may be oriented in other ways (rotated 90 degrees or rotated in other orientations), and the spatial relative descriptors used herein shall be interpreted accordingly.

[0049] When the terms “same” or “equivalent” are used in the description of the example embodiments, it should be understood that some imprecision may exist. Therefore, when an element or value is said to be the same as another element or value, it should be understood that the element or value is the same as the other element or value within manufacturing or operational tolerances (e.g., ±10%).

[0050] When the terms “about” or “substantially” are used in conjunction with numerical values, it should be understood that the relevant numerical values ​​include manufacturing or operational tolerances (e.g., ±10%) near the stated values. Furthermore, when the terms “usually” and “substantially” are used in conjunction with geometry, it should be understood that precision of the geometry is not required, but rather the range of shapes is within the scope of this disclosure.

[0051] Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which these exemplary embodiments pertain. It should also be understood that terms (including those defined in common dictionaries) should be interpreted as having the same meaning as they have in the context of the relevant field and should not be interpreted in an idealized or overly formal sense, unless expressly defined herein.

[0052] In this exemplary embodiment, a wafer will be described as an example of an object to be processed. However, the spirit of the invention can also be applied to apparatuses using other types of substrates, in addition to wafers.

[0053] In the following description, exemplary embodiments of the present invention will be described with reference to the accompanying drawings.

[0054] Figure 3 This is a diagram schematically illustrating an exemplary embodiment of the substrate processing apparatus of the present invention. (See reference...) Figure 3 The substrate processing apparatus 1 includes a transposition module 10 and a processing module 20. According to an exemplary embodiment, the transposition module 10 and the processing module 20 are disposed in one direction. Hereinafter, the direction in which the transposition module 10 and the processing module 20 are disposed is defined as a first direction 2. When viewed from above, the direction perpendicular to the first direction 2 is defined as a second direction 4, and the direction perpendicular to the plane including both the first direction 2 and the second direction 4 is defined as a third direction 6.

[0055] The transposition module 10 transfers the substrate W from the cassette C containing the substrate W to the processing module 20, which processes the substrate W. The transposition module 10 then receives the substrate W, which has already been fully processed in the processing module 20, into the cassette C. The longitudinal direction of the transposition module 10 is arranged in the second direction 4. The transposition module 10 includes a loading port 110 and a transposition frame 140.

[0056] The housing C containing the substrate W is located in the loading port 120. The loading port 120 is located on the opposite side of the processing module 20 based on the transposition frame 140. Multiple loading ports 120 can be provided. The multiple loading ports 120 can be arranged in a row along the second direction 4. The number of loading ports 120 can be increased or decreased according to the processing efficiency and footprint of the processing module 20.

[0057] The housing C has multiple slots (not shown). The substrate W can be located in the slots (not shown). The multiple slots (not shown) can be spaced apart from each other in a third direction 6. The substrate W can be located in each slot (not shown) and accommodated in the housing C in a horizontal position relative to the ground.

[0058] An airtight container, such as a front-opening unified pod (FOUP), can be used as box C. Box C can be placed on loading port 120 by a conveying device (not shown) (such as an overhead conveyor, overhead transport, or automated guided vehicle) or by an operator.

[0059] The indexing track 142 and the indexing robot 144 are disposed inside the indexing frame 140. The indexing track 142 is disposed in the indexing frame 140 along the second direction 4 in its longitudinal direction. The indexing robot 144 can transfer the substrate W. The indexing robot 144 can transfer the substrate W between the indexing module 10 and the buffer unit 220, which will be described later.

[0060] The indexing robot 120 includes an indexing hand 146. A substrate W is placed on the indexing hand 146. The indexing hand 146 can be configured to move along a second direction 4 on an indexing track 142. Therefore, the indexing hand 146 can move back and forth along the indexing track 142. Furthermore, the indexing hand 146 can be configured to rotate about a third direction 6, which is an axis. Additionally, the indexing hand 146 can be configured to move vertically along the third direction 6. Multiple indexing hands 146 can be provided. The multiple indexing hands 146 can be spaced apart from each other in the upward and downward directions. The multiple indexing hands 146 can move forward, backward, and rotate independently of each other.

[0061] The controller 30 can control the substrate processing apparatus 1. The controller 30 may include a process controller formed by a microprocessor (computer) that executes control of the substrate processing apparatus 1; a user interface formed by a keyboard through which an operator performs command input operations to manage the substrate processing apparatus 1; a display for visualizing and displaying the operating status of the substrate processing apparatus 1; and a storage unit for storing control programs for executing processes performed on the substrate processing apparatus 1 under the control of the process controller, or programs (i.e., processing recipes) for executing processes in each component according to various data and processing conditions. Furthermore, the user interface and storage unit can be connected to the process controller. The processing recipe can be stored in a storage medium in the storage unit, and the storage medium can be a hard disk, a portable disk (such as a CD-ROM or DVD), or a semiconductor memory (such as flash memory).

[0062] The controller 30 can control the substrate processing apparatus 1 to perform the substrate processing methods described below. For example, the controller 30 can control the configuration provided in the drying chamber 400 to perform the substrate processing methods described below.

[0063] Processing module 20 includes a buffer unit 220, a transfer frame 240, a liquid processing chamber 300, and a drying chamber 400. The buffer unit 220 provides a buffer space in which substrates W loaded into and unloaded from processing module 20 temporarily reside. The transfer frame 240 provides a transfer space for transferring substrates M between the buffer unit 220, the liquid processing chamber 300, and the drying chamber 400.

[0064] Liquid processing chamber 300 performs a liquid treatment process by supplying liquid to substrate W to treat substrate W. Drying chamber 400 performs a drying process to remove any residual liquid on substrate W. Liquid processing chamber 300 and drying chamber 400 can perform cleaning processes. Cleaning processes can be performed sequentially in liquid processing chamber 300 and drying chamber 400. For example, liquid processing chamber 300 can treat substrate W by supplying chemicals, rinsing solutions, and / or organic solvents to substrate W. For example, in drying chamber 400, drying can be performed using supercritical fluid to remove any residual liquid on substrate W.

[0065] A buffer unit 220 may be disposed between the indexing frame 140 and the transfer frame 240. The buffer unit 220 may be located at one end of the transfer frame 240. A slot (not shown) for placing the substrate W is disposed inside the buffer unit 220. Multiple slots (not shown) are provided. The multiple slots (not shown) may be spaced apart from each other along a third direction 6. The front and rear of the buffer unit 220 are open. The front may be the side facing the indexing frame 140, and the rear may be the side facing the transfer frame 240. The indexing robot 144 can access the buffer unit 220 through the front, and the transfer robot 244, which will be described later, can access the buffer unit 220 through the rear.

[0066] The conveyor frame 240 can be arranged along a first direction 2 in its longitudinal direction. The liquid handling chamber 300 and the drying chamber 400 can be arranged on both sides of the conveyor frame 240. The liquid handling chamber 300 and the drying chamber 400 can be arranged on the transverse portion of the conveyor frame 240. The conveyor frame 240 and the liquid handling chamber 300 can be arranged along a second direction 4. Furthermore, the conveyor frame 240 and the drying chamber 400 can be arranged along the second direction 4.

[0067] In one example, the liquid processing chamber 300 is disposed on opposite sides of the conveyor frame 240, and the drying chamber 400 is disposed on opposite sides of the conveyor frame 240. The liquid processing chamber 300 may be disposed closer to the buffer unit 220 than the drying chamber 400. On one side of the conveyor frame 240, the liquid processing chambers 300 may be arranged in an A×B pattern (each of A and B is a natural number 1 or greater than 1) along the first direction 2 and the third direction 6. Here, A is the number of liquid processing chambers 300 arranged in a row along the first direction 2, and B is the number of liquid processing chambers 300 arranged in a row along the third direction 6. For example, when four liquid processing chambers 300 are disposed on one side of the conveyor frame 240, the liquid processing chambers 300 may be arranged in a 2×2 pattern. The number of liquid processing chambers 300 may be increased or decreased. As described above, the liquid processing chambers 300 may be disposed only on one side of the conveyor frame 240, and the drying chamber 400 may be disposed only on the opposite side. Furthermore, the liquid handling chamber 300 and the drying chamber 400 can be arranged in a single layer on one side and the opposite side of the conveying frame 240.

[0068] The transfer frame 240 includes a guide rail 242 and a transfer robot 244. The guide rail 242 and the transfer robot 244 are disposed inside the transfer frame 240. The guide rail 242 may be arranged along its length in a first direction 2. The transfer robot 244 may be configured to move linearly along the guide rail 242 in the first direction 2. The transfer robot 244 transfers the substrate W between the buffer unit 220, the liquid handling chamber 300, and the drying chamber 400.

[0069] The transfer robot 244 includes a transfer hand 246 on which a substrate W is placed. The transfer hand 246 can be configured to move linearly along a first direction 2 on a guide rail 242. Therefore, the transfer hand 246 can move forward and backward along the guide rail 242. Furthermore, the transfer hand 246 can be configured to rotate about a third direction 6 and move along that third direction 6. Multiple transfer hands 246 can be provided. The multiple transfer hands 246 can be configured to be spaced apart from each other in the vertical direction. The multiple transfer hands 246 can move forward, backward, and rotate independently of each other.

[0070] Liquid processing chamber 300 performs liquid processing processes on substrate W. For example, liquid processing chamber 300 may be a chamber that performs a cleaning process to remove impurities (such as process byproducts or particles) adhering to substrate W. Liquid processing chambers 260 may have different structures depending on the type of process used to process substrate W. In contrast, each of the liquid processing chambers 300 may have the same structure.

[0071] Figure 4 It is shown schematically. Figure 3 A cross-sectional view of the structure of the liquid handling chamber. (Reference) Figure 4The liquid handling chamber 300 includes a chamber 310, a handling container 320, a support member 330, and a liquid supply unit 340.

[0072] Chamber 310 has an internal space. Chamber 310 is configured in a generally cubic shape. An opening (not shown) is formed on one side of chamber 310. The opening (not shown) serves as an inlet port through which transfer robot 244 loads substrate W into and unloads substrate W from the internal space of chamber 310. Processing container 320, support member 330, and liquid supply unit 340 are disposed within the internal space of chamber 310.

[0073] The processing container 320 has a processing space with an open upper portion. The processing container 320 may be a bowl with a processing space. The processing container 320 may be configured to surround the processing space. The processing space of the processing container 320 is configured as a space for a substrate W supported and rotated by a support member 330, described later. Furthermore, the processing space is configured as a space for a liquid supply unit 340, described later, to supply liquid onto the substrate W for processing.

[0074] According to the example, the processing container 320 may have a guide wall 321 and multiple recovery containers 323, 325, and 327. Each of the recovery containers 323, 325, and 327 collects a different liquid from the liquid used to process the substrate W. The recovery containers 323, 325, and 327 may each have a recovery space for recovering the liquid used to process the substrate W.

[0075] Guide walls 321 and recovery containers 323, 325, and 327 are arranged in the form of an annular ring surrounding support member 330. When liquid is supplied to substrate W, liquid splashed due to the rotation of substrate W can enter the recovery space through inlets 323a, 325a, and 327a of recovery containers 323, 325, and 327, as described below. Different types of liquids can be introduced into recovery containers 323, 325, and 327, respectively.

[0076] The processing container 320 has a guide wall 320, a first recycling container 323, a second recycling container 325, and a third recycling container 327. The guide wall 321 is arranged in an annular shape surrounding the support member 330. The first recycling container 323 is arranged in an annular shape surrounding the guide wall 321. The second recycling container 325 is arranged in an annular shape surrounding the first recycling container 323. The third recycling container 327 is arranged in an annular shape surrounding the second recycling container 325.

[0077] The space between guide wall 321 and first recycling container 323 serves as a first inlet 323a through which liquid is introduced. The space between first recycling container 323 and second recycling container 325 serves as a second inlet 325a through which liquid is introduced. The space between second recycling container 325 and third recycling container 327 serves as a third inlet 327a through which liquid is introduced. The second inlet 325a may be located above the first inlet 323a, and the third inlet 327a may be located above the second inlet 325a. The liquid introduced into the first inlet 323a, the liquid introduced into the second inlet 325a, and the liquid introduced into the third inlet 327a may be different types of liquid.

[0078] The space between the bottom of guide wall 321 and the first recovery container 323 serves as a first outlet 323b through which impurities and gaseous gases generated by the liquid are discharged. The space between the bottom of the first recovery container 323 and the second recovery container 325 serves as a second outlet 325b through which impurities and gaseous gases generated by the liquid are discharged. The space between the bottom of the second recovery container 325 and the third recovery container 327 serves as a third outlet 327b through which impurities and gaseous gases generated by the liquid are discharged. Impurities and gaseous gases discharged from the first outlet 323b, the second outlet 325b, and the third outlet 327b are discharged to the outside of the liquid processing chamber 300 via the discharge unit 370, which will be described later.

[0079] Vertically downward-extending recovery lines 323c, 325c, and 327c are connected to the bottom surfaces of recovery containers 323, 325, and 327, respectively. Recovery lines 323c, 325c, and 327c discharge liquids introduced through recovery containers 323, 325, and 327, respectively. The discharged treated liquids can be reused via an external liquid recovery system (not shown).

[0080] The support member 330 supports and rotates the substrate W within the processing space. The support member 330 may have a rotary chuck 331, a support pin 333, a chuck pin 335, a rotation shaft 337, and a driver 339.

[0081] When viewed from above, the rotary chuck 331 has a generally circular top surface. The top surface of the rotary chuck 331 may have a diameter larger than that of the substrate W.

[0082] Multiple support pins 333 are provided. The support pins 333 are disposed on the top surface of the rotary chuck 331. The support pins 333 are spaced at regular intervals at the edge portions of the top surface of the rotary chuck 331. The support pins 333 are formed to project upwards from the top surface of the rotary chuck 331. The support pins 333 are arranged in combination to form an integral annular shape. The support pins 333 support the edge region of the rear surface of the substrate W, such that the substrate W is spaced apart from the top surface of the rotary chuck 331 by a predetermined distance.

[0083] Multiple chuck pins 335 are provided. The chuck pins 335 are positioned relatively further from the center of the rotary chuck 331 than the support pins 333. The chuck pins 335 project upwards from the top surface of the rotary chuck 331. The chuck pins 335 support the lateral region of the substrate W to prevent the substrate W from laterally deviating from its fixed position as it rotates.

[0084] A rotating shaft 337 is connected to a rotating chuck 331. The rotating shaft 337 is coupled to the bottom surface of the rotating chuck 331. The rotating shaft 337 can be configured to face a third direction 6 in the longitudinal direction. The rotating shaft 337 is configured to be rotatable by receiving power from a driver 339. The rotating shaft 337 rotates via the driver 339, and the rotating chuck 331 rotates via the rotating shaft 337. The driver 339 rotates the rotating shaft 337. The driver 339 is capable of changing the rotational speed of the rotating shaft 337. The driver 339 can be a motor providing the driving force. However, the driver is not limited to this and can be provided in various variations with any known means of providing driving force.

[0085] Liquid supply unit 340 supplies liquid to substrate W. Liquid supply unit 340 supplies liquid to substrate W supported on support member 330. Liquid supplied to substrate W by liquid supply unit 340 can be provided in various types. Liquid supply unit 340 may include support rod 341, arm 342, actuator 343, first liquid supply nozzle 344 and second liquid supply nozzle 345.

[0086] Support rod 341 is located within the interior space of chamber 310. Support rod 341 may be located on one side of processing container 320 within the interior space. Support rod 341 may be rod-shaped, with its longitudinal direction facing the third direction 6. Support rod 341 is configured to be rotatable by actuator 343, which will be described later.

[0087] Arm 342 is connected to the upper end of support rod 341. Arm 342 extends vertically from the longitudinal direction of support rod 341. Arm 342 can be positioned along its length in a third direction 6. At the end of arm 342, a first liquid supply nozzle 344, a second liquid supply nozzle 345, and a third liquid supply nozzle 346 can be fixedly connected.

[0088] Arm 342 can be configured to move forward and backward along its longitudinal direction. Arm 342 can be oscillated via support rod 341 by a drive 343 that rotates support rod 341. By rotating arm 342, the first liquid supply nozzle 344, the second liquid supply nozzle 345, and the third liquid supply nozzle 346 can also oscillate and move between a processing position and a standby position.

[0089] The processing position can be a position in which any one of the first liquid supply nozzle 344, the second liquid supply nozzle 345, and the third liquid supply nozzle 346 is opposite to the substrate W supported on the support member 330. In one example, the processing position can be a position in which the center of any one of the first liquid supply nozzle 344, the second liquid supply nozzle 345, and the third liquid supply nozzle 346 is opposite to the center of the substrate W supported on the support member 330. The standby position can be a position in which the first liquid supply nozzle 344, the second liquid supply nozzle 345, and the third liquid supply nozzle 346 are all offset from the processing position.

[0090] The actuator 343 is connected to the support rod 341. The actuator 343 may be mounted on the bottom surface of the chamber 310. The actuator 343 provides the driving force for rotating the support rod 341. The actuator 343 may be configured as a known motor providing the driving force.

[0091] A first liquid supply nozzle 344 supplies a first liquid to the substrate W. The first liquid supply nozzle 344 can also supply the first liquid to the substrate W supported on the support member 330. A second liquid supply nozzle 345 supplies a second liquid to the substrate W. The second liquid supply nozzle 345 supplies the second liquid to the substrate W supported on the support member 330. A third liquid supply nozzle 346 supplies a third liquid to the substrate W. The third liquid supply nozzle 346 supplies the third liquid to the substrate W supported on the support member 330.

[0092] According to an exemplary embodiment, the first liquid, the second liquid, and the third liquid can be any of a chemical, a rinsing liquid, and an organic solvent. For example, chemicals can include diluted sulfuric acid (H₂SO₄), phosphoric acid (P₂O₅), hydrofluoric acid (HF), and ammonium hydroxide (NH₄OH). For example, a rinsing liquid can include water or deionized water (DIW). For example, an organic solvent can include alcohol, such as isopropanol (IPA). According to an exemplary embodiment, the first liquid can be a chemical. Furthermore, the second liquid can be a rinsing liquid. Additionally, the third liquid can be an organic solvent.

[0093] As an example, the invention has been described based on the case in which the first liquid supply nozzle 344, the second liquid supply nozzle 345, and the third liquid supply nozzle 346 are all coupled to the arm 342 in the liquid supply unit 340 according to an exemplary embodiment of the invention, but the invention is not limited thereto. For example, each of the first liquid supply nozzle 344, the second liquid supply nozzle 345, and the third liquid supply nozzle 346 may independently have an arm, a support rod, and an actuator, and may independently swing and move back and forth to move between a processing position and a standby position.

[0094] A lifting unit 350 is disposed within the interior space of chamber 310. The lifting unit 350 adjusts the relative height between the processing container 320 and the support member 330. The lifting unit 350 can move the processing container 320 linearly in a third direction 6. Therefore, since the heights of the recovery containers 323, 325, and 327 for recovering liquid change according to the type of liquid supplied to the substrate W, the liquid can be separated and collected. As described above, the processing container 320 is fixedly mounted, and the lifting unit 350 can move the support member 330 in an upward or downward direction to change the relative height between the support member 330 and the processing container 320.

[0095] The discharge unit 370 discharges impurities generated in the processing space. Impurities generated during liquid processing of the substrate W are discharged by a decompression unit (not shown) disposed in the discharge unit 370. The discharge unit 370 may be coupled to the bottom surface of the processing container 320. In one example, the discharge unit 370 may be disposed in the space between the rotation shaft 337 and the inner wall of the processing container 320.

[0096] The drying chamber 400 may be a processing chamber that is sealed and isolated from the external environment. The drying chamber 400 utilizes a processing fluid to remove any residual liquid on the substrate W. In one example, the drying chamber 400 uses a supercritical fluid to remove a third liquid (e.g., an organic solvent) remaining on the substrate W. In the drying chamber 400, a supercritical process is performed by utilizing the properties of the supercritical fluid. Representative examples include supercritical drying and supercritical etching processes. Hereinafter, supercritical processes will be described based on the supercritical drying process. However, this is merely for ease of understanding, and the drying chamber 400 may perform other supercritical processes besides supercritical drying. In an exemplary embodiment, the supercritical fluid may be supercritical carbon dioxide (scCO2).

[0097] Figure 5 This is a graph showing the phase transition curve of carbon dioxide. (Reference) Figure 5Carbon dioxide has a critical temperature of 31.1°C and a relatively low critical pressure of 7.38 MPa, making it easy to transform into a supercritical state. The phase transition of carbon dioxide can be easily controlled by adjusting temperature and pressure, and carbon dioxide is inexpensive. Furthermore, carbon dioxide is non-toxic and harmless to humans, and is non-flammable and inert. Compared to water or other organic solvents, supercritical carbon dioxide has a diffusion coefficient approximately 10 to 100 times higher, resulting in rapid permeation and quick replacement by organic solvents. Additionally, due to its almost non-existent surface tension, supercritical carbon dioxide is advantageous for drying substrates, including those with fine circuit patterns. Moreover, various chemical reaction byproducts of supercritical carbon dioxide can be recovered, and it can be converted back to gas after the supercritical drying process, allowing for the separation and reuse of organic solvents, thus reducing environmental pollution.

[0098] Figure 6 It is shown schematically. Figure 3 A diagram illustrating an exemplary embodiment of the drying chamber. (Refer to...) Figure 6 The drying chamber 400 may include a shell 410, a first substrate support 420, a fluid supply unit 430, a fluid discharge unit 470, a heating unit 480, and a second substrate support 490.

[0099] The housing 410 has a processing space 401 therein. A drying process can be performed on the substrate W in the processing space 401. The housing 410 may include a first body 412, a second body 414, and a lifting member 416.

[0100] The first body 412 and the second body 414 are vertically arranged. In an exemplary embodiment, the first body 412 may be located above the second body 414. The first body 412 may be an upper body. The first body 412 and the second body 414 are combined with each other to define a processing space 401. The first body 412 and the second body 414 may be combined with each other to have a generally cylindrical shape. The first body 412 and the second body 414 can open and close the processing space 401. The first body 412 and the second body 414 can close the processing space 401.

[0101] The first body 412 includes an upper wall 413. A groove 413a may be formed in the edge region of the upper wall 413. The groove 413a may be formed adjacent to the processing space 401. Furthermore, a first substrate support 420, which will be described later, may be mounted on the upper wall 413.

[0102] The second body 414 may be a lower body. The second body 414 includes a lower wall 415. The lower wall 415 may have a curved cross-section. A groove 415a may be formed in the edge region of the lower wall 415. The groove 415a may be formed in the region of the lower wall 415 corresponding to the first substrate support 420, which will be described later. When the second body 414 is in the closed position, the first substrate support 420 may be located in the groove 415a.

[0103] The lower wall 415 includes a bottom surface 416. The bottom surface 416 may be one side of the lower wall 415 adjacent to the processing space 401. The bottom surface 416 may be the top surface of the lower wall 415. The bottom surface 416 includes a central base surface 416a, a groove base surface 416b, and a floor surface 416c. The central base surface 416a is located in the central region of the bottom surface 416. The central base surface 416a may have a second supply port 414a and an exhaust port 414b, which will be described later. The diameter of the central base surface 416a may be set to be smaller than the diameter of the support plate 491, which will be described later. The groove base surface 416b is formed in the edge region of the bottom surface 416. The groove base surface 416b corresponds to the bottom surface of the surface forming the groove 415a. The groove base surface 416b is located at the same height as the central base surface 416a. The inner diameter of the groove base surface 416b may be set to be equal to or greater than the diameter of the support plate 491. The inner diameter of the groove base surface 416b can be set to be smaller than the diameter of the circle formed by the extension portion 424b, as will be described later. A floor surface 416c is formed between the base surfaces 415a and 415b. The floor surface 416c can be set to be higher than the central base surface 416a and the groove base surface 416b relative to a third direction 6. Therefore, the floor surface 416c can be set to protrude from the floor surface 416. The central base surface 416a and the floor surface 416c, as well as the floor surface 416c and the groove base surface 416b, can be connected by an inclined plane. The floor surface 416c can be provided with a second substrate support 490, as will be described later.

[0104] The first body 412 and the second body 414 may have supply ports 412a and 414a respectively formed on the first body 412 and the second body 414. According to an exemplary embodiment, when viewed from above, the first supply port 412a formed on the first body 412 may be formed in the central region of the first body 412. Furthermore, when viewed from above, the second supply port 414a formed in the second body 414 may be formed in the central region of the second body 414. Additionally, a discharge port 414b may be formed on the second body 414. When viewed from above, the discharge port 414b may be formed at a position eccentrically located at a distance from the central axis of the second body 414. For example, the discharge port 414b may be formed at a position spaced a distance from the position where the supply port 414a is formed.

[0105] The lifting member 416 moves the second body 414 up and down. The lifting member 416 may include a lifting cylinder 419 and a lifting rod 418. The lifting cylinder 419 may be connected to the second body 414. According to an exemplary embodiment, by connecting the lifting cylinder 419 to the second body 414, the second body 414 can move up and down. Conversely, the first body 412 can be fixed in place.

[0106] The lifting cylinder 419 can move the second body 414 to a closed position. The closed position is where the second body 414 engages with the first body 412 to close the processing space 401. The lifting cylinder 419 moves the second body 414 to the closed position, bringing the first body 412 and the second body 414 into close contact. The lifting cylinder 419 seals and isolates the processing space 401 from the external environment. Therefore, when performing a drying process on the substrate W, the pressure in the processing space 401 can be maintained at a critical pressure or a higher pressure.

[0107] The lifting cylinder 419 can move the second body 414 to an open position. The open position is where the second body 414 and the first body 412 are spaced apart to allow the substrate W to be loaded into or unloaded from the processing space 401. The lifting cylinder 419 can move the second body 414 to the open position so that the first body 412 and the second body 414 are spaced apart from each other. When the first body 412 and the second body 414 are spaced apart from each other, the processing space 401 is open. When the processing space 401 is open, the substrate W can be loaded into or unloaded from the processing space 401. The substrate W loaded into the processing space 401 can be a substrate W that has already been completely liquid-treated in the liquid processing chamber 300. For example, the substrate W loaded into the processing space 401 can be a substrate W with organic solvent residue on its top surface.

[0108] Lifting rod 418 generates a lifting force. For example, lifting rod 418 can generate a force to move in a third direction 6. Lifting rod 418 can be oriented with its longitudinal direction facing the third direction 6. One end of lifting rod 418 can be inserted into lifting cylinder 419. The other end of lifting rod 418 can be connected to first body 412. The relative lifting movement of lifting cylinder 419 and lifting rod 418 can cause second body 414 to move in the third direction 6. When second body 414 moves in the vertical direction (e.g., third direction 6), lifting rod 418 prevents first body 412 and second body 414 from moving in the horizontal direction (e.g., first direction 2 and second direction 4). Lifting rod 418 guides second body 414 in the vertical direction of movement. Lifting rod 418 can prevent first body 412 and second body 414 from disengaging from their fixed positions relative to each other.

[0109] In one example of the invention described above, the invention has been based on a case where the second body 414 moves in a vertical direction to seal the processing space 401, but is not limited thereto. For example, the first body 412 and the second body 414 can move upward and downward, respectively. Furthermore, the first body 412 can be movable in both the upward and downward directions, and the second body 414 can be fixed.

[0110] Unlike the example above, a single housing 410 may be provided, having an opening (not shown) formed on one side of the housing 410 through which the substrate W is loaded and unloaded. The housing 410 may be provided with a door (not shown). The door (not shown) may be movable in the vertical direction to open and close the opening (not shown) and keep the housing 410 in a sealed state.

[0111] The first substrate support 420 supports the substrate W within the processing space 401. The first substrate support 420 can be fixedly mounted on the first body 412. The first substrate support 420 may have a fixing rod 422 and a bracket 424.

[0112] A fixing rod 422 is fixedly mounted on the first body 412. The fixing rod 422 may be formed to protrude from the upper wall 413 of the first body 412 toward the processing space. The fixing rod 422 may have a rod shape. The fixing rod 422 is provided with an upward and a downward longitudinal direction. Multiple fixing rods 422 may be provided. The multiple fixing rods 422 are spaced apart from each other. The multiple fixing rods 422 are positioned such that they do not interfere with the substrate W when loading or unloading the substrate W. A bracket 424 is connected to the lower end of the fixing rod 422.

[0113] The substrate W is mounted on a support 424. The support 424 supports an edge region of the lower surface of the substrate W. The support 424 supports one side of the edge region of the substrate W and also supports the other side facing that side. The support 424 includes a base 424a, an extension 424b, and a support protrusion 424c.

[0114] The base 424a is connected to the fixing rod 422. When viewed from above, the base 424a can be configured in an arc shape or a straight shape. As an example, the invention will be described based on the case where the base is configured in an arc shape. The inner diameter of the base 424a can be configured to be larger than the diameter of the substrate W. When viewed from above, the base 424a can be positioned in a location that does not overlap with the substrate W. The base 424a can have a vertical cross-section formed by a horizontal portion and a vertical portion. In one example, the vertical cross-section of the base 424a can be configured as follows: Shape. Multiple bases 424a may be provided. In one example, two bases 424a may be provided. In the following description, by way of example, the invention has been described based on the case in which two bases 424a are provided. The respective bases 424a may be positioned facing each other. The respective bases 424a may be arranged in a shape that is symmetrical to each other. Each base 424a may be part of an imaginary ring shape. Furthermore, the bases 424a may be connected to an extension 424b.

[0115] The extension portion 424b has a shape that protrudes from the base 424a. The extension portion 424b can extend in a direction toward the space surrounded by the fixing rod 422. The extension portion 424b can be provided at both ends of the base 424a. Multiple extension portions 424b can be provided. According to the example, four extension portions 424b can be provided.

[0116] Support protrusions 424c support the lower surface of substrate W. Support protrusions 424c are mounted on extensions 424b. Multiple support protrusions 424c can be provided. The number of support protrusions 424c can be set to correspond to the number of extensions 424b. According to the example, four support protrusions 424c can be provided.

[0117] Due to the above structure, the entire upper surface region of substrate W, the central region of the lower surface of substrate W, and a portion of the edge region of the lower surface of substrate W can be exposed to the fluid supplied to the processing space 401.

[0118] In processing operation S30, which will be described later, fluid supply unit 430 supplies fluid to processing space 401. In an exemplary embodiment, the fluid may be supercritical carbon dioxide (scCO2). Hereinafter, for ease of description, as an example, the invention will be described based on the case in which fluid supply unit 430 supplies a supercritical fluid comprising supercritical carbon dioxide (scCO2) to processing space 401.

[0119] Refer again Figure 6 The fluid supply unit 430 may include a main supply pipe 432, a first fluid supply unit 440, and a second fluid supply unit 450.

[0120] The main supply pipe 432 can supply supercritical fluid to the first fluid supply unit 440 and the second fluid supply unit 450. One end of the main supply pipe 432 is connected to a storage source (not shown) in which the supercritical fluid is stored. According to an exemplary embodiment, the storage source (not shown) can be a reservoir. The other end of the main supply pipe 432 can branch into the first supply pipe 442 and the second supply pipe 452, which will be described later. A second heater 484, which will be described later, can be installed in the main supply pipe 432.

[0121] A first fluid supply unit 440 supplies supercritical fluid to a processing space 401. The first fluid supply unit 440 supplies supercritical fluid to the processing space 401 via a first supply port 412a formed in the first body 412. According to an exemplary embodiment, the first fluid supply unit 440 can supply supercritical fluid to the upper region of the processing space 401. The first fluid supply unit 440 can supply supercritical fluid in a direction toward the upper surface of the substrate W supported by the support unit 430.

[0122] The first fluid supply unit 440 may include a first supply pipe 442 and a first valve 444. One end of the first supply pipe 442 branches off from the main supply pipe 432. The other end of the first supply pipe 442 is connected to a first supply port 412a. The first supply pipe 442 receives supercritical fluid from the main supply pipe 432 and supplies the supercritical fluid to the processing space 401 through the first supply port 412a.

[0123] A first valve 444 is installed at a first supply pipe 442. The first valve 444 can be configured to selectively open and close an on / off valve of the first supply pipe 442. When the first valve 444 is open, supercritical fluid stored in a storage source (not shown) can be supplied to the processing space 401 via the main supply pipe 432, the first supply pipe 442, and the first supply port 412a.

[0124] A first valve 444 is installed at the first supply pipe 442. The first valve 444 can be configured to selectively open and close the first supply pipe 442 as an on / off valve. When the first valve 444 is open, supercritical fluid stored in a storage source (not shown) can be supplied to the processing space 401 through the main supply pipe 442, the first supply pipe 442, and the upper supply port 412a.

[0125] In the above example, the invention has been described based on the case where the first valve 444 is an open / close valve, but the invention is not limited thereto, and the first valve 444 can be a flow rate control valve. As the flow rate control valve regulates the flow rate inside the first supply conduit 442, the flow rate of the supercritical fluid supplied to the processing space 401 per unit time can be changed. Changing the flow rate of the supercritical fluid supplied to the processing space 401 per unit time allows for changes in the pressure of the supercritical fluid within the first supply conduit 432 and within the processing space 401.

[0126] The second fluid supply unit 450 supplies supercritical fluid to the processing space 401. The second fluid supply unit 450 supplies supercritical fluid to the processing space 401 via a second supply port 414a formed in the second body 414. According to an exemplary embodiment, the second fluid supply unit 450 can supply supercritical fluid to the lower region of the processing space 401. The second fluid supply unit 450 can supply supercritical fluid in a direction toward the lower surface of the substrate W supported by the second substrate support 490.

[0127] The second fluid supply unit 450 may include a second supply pipe 452 and a second valve 454. One end of the second supply pipe 452 branches off from the main supply pipe 432. The other end of the second supply pipe 452 is connected to a second supply port 414a. The second supply pipe 452 receives supercritical fluid from the main supply pipe 432 and supplies the received supercritical fluid to the processing space 401 through the second supply port 414a.

[0128] A second valve 454 is installed in a second supply conduit 452. The second valve 454 can be configured to selectively open and close an on / off valve of the second supply conduit 452. When the second valve 454 is open, supercritical fluid stored in a storage source (not shown) can be supplied to the processing space 401 via the main supply conduit 432, the second supply conduit 452, and the second supply port 414a.

[0129] In the foregoing example, the invention has been described as an example based on the case where the second valve 454 is an open / close valve, but the invention is not limited thereto, and the second valve 454 can be a flow rate control valve. As the flow rate control valve adjusts the opening flow rate, the flow rate of the supercritical fluid supplied to the processing space 401 per unit time can be changed. Changing the flow rate of the supercritical fluid supplied to the processing space 401 per unit time allows for a change in the pressure of the supercritical fluid within the second supply conduit 452 and within the processing space 401.

[0130] The aforementioned flow rate control valve can be provided as a metering valve. Optionally, the flow rate control valve can be configured as a swing valve or a butterfly valve. However, the type of flow rate control valve is not limited to this, and various modifications can be made, and it can be provided as a known flow rate control valve capable of controlling the fluid flow rate. In the foregoing example, the invention has been described based on the case where the first valve 444 and the second valve 454 are configured as flow rate control valves, but the invention is not limited thereto, and the first valve 444 and the second valve 454 can be configured as open and close valves, and the first flow rate control valve (not shown) and the second flow rate control valve (not shown) can be provided separately.

[0131] The fluid discharge unit 470 discharges the atmosphere from the processing space 401. Additionally, the fluid discharge unit 470 discharges the supercritical fluid supplied to the processing space 401. The fluid discharge unit 470 may include a discharge conduit 472, a pressure reducing member 474, and a discharge valve 476.

[0132] One end of the discharge pipe 472 is connected to the discharge port 414b formed in the second body 414. The other end of the discharge pipe 472 is connected to the pressure reducing member 474. The pressure reducing member 474 can be configured as a motor that provides negative pressure. The supercritical fluid supplied to the processing space 401 is sequentially discharged to the outside of the housing 410 through the discharge port 414b and the discharge pipe 472. In addition, a discharge valve 476 is installed in the discharge pipe 472. The discharge valve 476 can be configured as an open / close valve.

[0133] Heating unit 480 changes the temperature of the supercritical fluid. According to an exemplary embodiment, heating unit 480 can be provided as a heater. Heating unit 480 may include a first heater 482 and a second heater 484.

[0134] According to an exemplary embodiment, the first heater 482 can be mounted on the side wall of the housing 410. For example, the first heater 482 can be embedded in the side wall of at least one of the first body 412 and the second body 414. The first heater 482 can change the temperature of the supercritical fluid flowing through the processing space 401 by changing the temperature of the processing space 401. The first heater 482 can heat the supercritical fluid supplied to the processing space 401 to a critical temperature or higher and maintain the supercritical fluid phase. Furthermore, when the supercritical fluid supplied to the processing space 401 is liquefied, the first heater 482 can heat the supercritical fluid supplied to the processing space 401 to change the phase back to the supercritical phase.

[0135] According to an exemplary embodiment, a second heater 484 may be installed in the fluid supply unit 430. For example, the second heater 484 may be installed in the main supply pipe 432. The second heater 484 can change the internal temperature of the main supply pipe 432 to change the temperature of the supercritical fluid flowing within the main supply pipe 432. The second heater 484 can heat the supercritical fluid flowing within the main supply pipe 432 to a critical temperature or higher and maintain the supercritical fluid phase. Furthermore, when the supercritical fluid flowing within the main supply pipe 432 is liquefied, the second heater 484 can increase the internal temperature of the main supply pipe 432 to change it back to the supercritical phase.

[0136] In the above example, the invention has been described as an example based on the case where the second heater 484 is installed in the main supply pipe 432, but the invention is not limited thereto. For example, the second heater 484 may be installed in at least one of the main supply pipe 432, the first supply pipe 442, and the second supply pipe 452.

[0137] The second substrate support 490 supports the substrate W. The second substrate support 490 supports the substrate W, which is supported by the first substrate support 420. The second substrate support 490 supports the substrate W at a higher height than the first substrate support 420. The second substrate support 490 supports the substrate W when the second body 414 changes from an open position to a closed position. The second substrate support 490 includes a support plate 491, a support pin 493, and a support rod 495.

[0138] The support plate 491 can be configured as a circular plate. The diameter of the support plate 491 can be larger than the diameter of the central substrate surface 416a. The diameter of the support plate 491 can be smaller than the diameter of the substrate W. When the second body 414 is moved to the closed position, the dimensions of the support plate 491 can be configured not to interfere with the extension portion 424b. According to the example, the diameter of the support plate 491 can be smaller than the diameter of the circle formed by the plurality of extension portions 424b.

[0139] A support plate 491 is disposed in the processing space 401. The support plate 491 can be positioned along the path of the supercritical fluid supplied from the second supply port 414a. When viewed from above, the support plate 491 can be installed at a position overlapping the second supply port 414a and the discharge port 414b formed in the second body 414. The support plate 491 prevents the supercritical fluid supplied from the second supply port 414a from being discharged directly toward the substrate W and prevents damage to the bottom surface of the substrate W.

[0140] Support pin 493 supports the bottom surface of substrate W. Support pin 493 is disposed on the upper surface of support plate 491. According to the example, support pin 493 can be configured to support the central region of substrate W. Multiple support pins 493 can be provided. The multiple support pins 493 are configured to be spaced apart from each other by a predetermined distance.

[0141] Support rod 495 is connected to the lower end of support plate 491. Support rod 495 is mounted such that the longitudinal direction is vertical. According to the example, support rod 495 can be provided in rod shape. Multiple support rods 495 can be provided. Multiple support rods 495 are arranged to be spaced apart from each other by a predetermined distance. Support rod 495 is connected to the bottom surface 416 of second body 414. Support rod 495 is connected to floor surface 416c. Support rod 495 is provided with a length in which support plate 491 is spaced apart from second supply port 414a. Furthermore, when second body 414 is in the closed position, support rod 495 is provided with a length in which support pin 495 supports substrate W at a position higher than first substrate support 420.

[0142] The substrate processing method according to an exemplary embodiment of the present invention will be described in detail below. The substrate processing method described below can be performed in the drying chamber 400. Furthermore, the controller 30 can perform the substrate processing method described below by controlling the components of the drying chamber 400.

[0143] The substrate processing method includes loading operation S10, shutting down operation S20, and processing operation S30. Figure 7 The diagram schematically shows the second body in the open position during the loading operation, and Figure 8 This is a schematic diagram showing the second body in the closed position during the closing operation.

[0144] refer to Figure 7 Loading operation S10 is the operation of loading the substrate W into the processing space 401. In loading operation S10, the second body 414 is lowered to the open position. In loading operation S10, the processing space 401 is open. Subsequently, the transfer robot 244 loads the substrate W into the processing space 401. The transfer robot 244 enters the processing space 401. For ease of understanding, Figure 7The diagram shows a transfer robot 244 entering the processing space 401 along a first direction 2. However, the invention is not limited to this, and the transfer robot 244 may also enter the processing space 401 along a second direction 4. The transfer robot 244 transfers the substrate W to the first substrate support 420. The transfer robot 244 withdraws from the processing space 401, and the substrate W is supported by the first substrate support 420. Afterward, a closing operation S20 can be performed.

[0145] refer to Figure 8 The closing operation S20 is an operation to close the processing space 401. In the closing operation S20, the second body 414 rises. In the closing operation S20, the second body 414 moves to the closed position. Therefore, the second body 414, together with the first body 412, seals the processing space 401.

[0146] When the second substrate 414 rises, the second substrate support 490 rises together. The second substrate support 490 lifts the substrate W as it rises. The substrate W moves from the first substrate support 420 to the second substrate support 490. Therefore, the substrate W is supported by the second substrate support 490. Furthermore, the first substrate support 420 is located in a groove 415b formed in the lower wall 415. Thereafter, processing operation S30 can be performed.

[0147] Figure 9 This is a schematic diagram illustrating the flow of fluid on a substrate during a processing operation. (Reference) Figure 9 Processing operation S30 involves treating the substrate W with a fluid. The fluid may be a fluid containing carbon dioxide. According to an exemplary embodiment, the fluid may be a supercritical fluid. Fluid may be supplied preferentially from the second supply port 414a. Therefore, the pressure of the processing space 401 can be increased. Subsequently, when the pressure of the processing space 401 becomes a predetermined pressure or higher, fluid may be supplied from the first supply port 412a. Thereafter, when the fluid supply is sufficient, the substrate W is processed by the fluid. According to an example, the liquid film formed on the substrate W may be dried. The liquid film may contain an organic solvent. The organic solvent may be isopropanol (IPA).

[0148] According to an exemplary embodiment of the present invention, since the first substrate support 420 is located in the groove 415b of the lower body 414 when processing the substrate W, the fluid can flow uniformly to the substrate W without being disturbed by the first substrate support 420. The fluid flows uniformly on the substrate W, and thus the in-plane processing uniformity of the substrate W can be improved.

[0149] In the above example, by way of illustration, the invention has been described based on the lower wall 415 being configured in a curved shape. However, the invention is not limited thereto, and the lower wall 415 may be configured in a shape in which the floor surface 416c protrudes, such as... Figure 10 As shown.

[0150] The foregoing detailed description illustrates the present invention. Furthermore, the foregoing has shown and described exemplary embodiments of the invention, and the invention can be used in various other combinations, modifications, and environments. That is, modifications or alterations can be made to the foregoing within the scope of the inventive concept disclosed in this specification, its equivalents, and / or within the scope of the art or knowledge. The foregoing exemplary embodiments describe the optimal state for realizing the technical spirit of the invention, and various variations are possible for specific fields of application and uses of the invention. Therefore, the above detailed description of the invention is not intended to limit the invention to the disclosed exemplary embodiments. Furthermore, the appended claims should be interpreted to include other exemplary embodiments as well.

Claims

1. An apparatus for processing a substrate, the apparatus comprising: A chamber, the chamber being used to provide processing space for a substrate; A fluid supply unit for supplying fluid to the processing space; A discharge unit for discharging the fluid from the processing space; A first substrate support is placed in the processing space, and a robot that transports the substrate places the substrate on the first substrate support. as well as A second substrate support is disposed within the processing space and supports the substrate during processing within the processing space. The chamber includes: First subject; A second entity, which is combined with the first entity to define the processing space; and A lifting member for moving the second body relative to the first body, and The lifting component moves the second body between the open position and the closed position. The opening position is the location where the substrate is loaded into or unloaded from the processing space by opening the processing space. The closed position is the position where the processing space is sealed to process the substrate, and the first substrate support includes: Multiple fixing rods, said multiple fixing rods being installed in the chamber; and A bracket, mounted on the rod, on which the substrate is placed, and a second substrate support, comprising a support plate opposite to the substrate supported on the first substrate support. When the second body is in the closed position, the bracket is located below the support plate.

2. The device according to claim 1, wherein the first substrate support is fixedly connected to the first body. The second substrate support is fixedly connected to the second body, and The first body is located above the second body.

3. The device according to claim 2, wherein a groove is formed in the region corresponding to the support on the lower wall of the chamber, and In the closed position, the bracket is located within the groove.

4. The apparatus of claim 3, wherein the bottom surface of the lower wall of the chamber adjacent to the processing space comprises: The central base surface of the central region of the bottom surface; The groove base surface, wherein the groove base surface is the bottom surface of the groove; as well as A floor surface, wherein the floor surface is configured to be higher than the base surface in the region between the central base surface and the groove base surface, and The fluid supply unit includes a fluid supply line that supplies fluid to a lower supply port formed on the surface of the central base.

5. The device of claim 4, wherein the second substrate support is mounted on the floor surface.

6. The device of claim 5, wherein the second substrate support is larger than the outer diameter of the central substrate surface and smaller than the inner diameter of the groove substrate surface.

7. The device according to claim 1, wherein, The region in which the second substrate support supports the substrate is a region further inward than the region in which the first substrate support supports the substrate.

8. The device of claim 7, wherein, when viewed from above, the second substrate support is located outside the first substrate support.

9. The device according to claim 8, wherein the support comprises: Base; Multiple extension portions, the multiple extension portions extending from the base; as well as Multiple support pins are respectively mounted on the extension portion, and the substrate is placed on the multiple support pins. In the closed position, the upper end of the support pin is lower than the support plate.

10. The device according to claim 9, wherein, when viewed from above, the diameter of the support plate is set to be smaller than the diameter of the circle passing through the support pin.

11. A method for processing a substrate, the method comprising: A loading operation in which a transfer robot loads a substrate into the processing space defined by the upper and lower main bodies, with the processing space open. The closing operation, following the loading operation, involves closing the processing space by moving either the upper body or the lower body relative to the other; and The processing operation, following the shutdown operation, involves processing the substrate by supplying fluid to the processing space. During the loading operation, the transfer robot places the substrate onto a first substrate support attached to the upper body, and In the processing operation, the substrate is processed while the substrate placed on the first substrate support is transferred to the second substrate support connected to the lower body.

12. The method of claim 11, wherein the substrate is transferred from the first substrate support to the second substrate support by moving the other relative to the upper body and the lower body.

13. The method of claim 12, wherein during the shutdown operation, the substrate is transferred from the first substrate support to the second substrate support.

14. The method of claim 13, wherein during the loading operation, the first substrate support is positioned higher than the second substrate support, and In the processing operation, the position of the first substrate support is lower than that of the second substrate support.

15. The method of claim 14, wherein during the closing operation, the first substrate support is located in a groove formed in the lower wall of the lower body.

16. The method of claim 15, wherein the second substrate support is mounted on a bottom surface extending from the upper portion of the groove.

17. The method of claim 16, wherein in the processing operation, the fluid is supplied through a lower supply port formed in the lower wall of the chamber, and The lower supply port is formed in the central region of the lower wall of the chamber.

18. An apparatus for processing a substrate, the apparatus comprising: A chamber, the chamber being used to provide processing space for a substrate; A fluid supply unit for supplying fluid to the processing space; A discharge unit for discharging the fluid from the processing space; A first substrate support is placed in the processing space, and a robot that transports the substrate places the substrate on the first substrate support. as well as A second substrate support is disposed within the processing space and supports the substrate during processing within the processing space. The chamber includes: upper body; The lower main body, which is combined with the upper main body to define the processing space; and A lifting member is used to move the lower body relative to the upper body. The lifting component moves the lower body between the open and closed positions. The opening position is the location where the substrate is loaded into or unloaded from the processing space by opening the processing space. The closed position is the position where the processing space is sealed to process the substrate, and the first substrate support disposed on the upper body includes: Multiple rods, said multiple rods being mounted on the upper body; and A support, which is mounted on the rod and on which the substrate is placed, is used. The second substrate support mounted on the lower body includes a support plate opposite to the substrate supported on the first substrate support. A groove is formed in the region corresponding to the bracket on the lower wall of the lower body, and In the closed position, the bracket is located within the groove and below the support plate.

19. The apparatus of claim 18, wherein the bottom surface of the lower wall of the chamber adjacent to the processing space comprises: A floor surface is formed in an intermediate region, which is the area between the central region of the bottom surface and the base surface, the base surface being the bottom surface of the groove, and the floor surface is configured to be higher than the base surface. The fluid supply unit includes a fluid supply line that supplies fluid to a lower supply port formed in the central region of the lower wall of the chamber. The second substrate support is larger than the outer diameter of the central base surface and smaller than the inner diameter of the groove base surface, and the second substrate support is mounted on the floor surface.

20. The device of claim 19, wherein the support comprises: Base; Multiple extension portions, the multiple extension portions extending from the base; as well as Multiple support pins are respectively mounted on the extension portion, and the substrate is placed on the multiple support pins. When viewed from above, the diameter of the support plate is set to be smaller than the diameter of the circle passing through the support pin, and In the closed position, the upper end of the support pin is lower than the support plate.

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