Electronic device and method of manufacturing same

Abstract

An electronic device and a method of manufacturing the electronic device. An electronic device includes an embedded module that includes a module assembly that includes a first terminal and a second terminal. A first module substrate is coupled to the first terminal through a first bonding layer, and a second module substrate is coupled to the second component terminal through a second bonding layer. A module encapsulant covers the module assembly and the first and second module substrates. A first device substrate is coupled to the first module substrate and a second device substrate is coupled to the second module substrate. A device terminal is coupled to the module assembly, and a device encapsulant covers the embedded module, the device terminal, and the first and second device substrates. The first bonding layer includes a first sintered material, the second bonding layer includes a second sintered material, and portions of the first device substrate and the device terminal are exposed from the device encapsulant.

Description

Technical Field

[0001] This disclosure generally relates to electronic devices, and more specifically, to electronic devices and methods of manufacturing electronic devices. Background Technology

[0002] Previous semiconductor packaging methods and methods for forming semiconductor packages are inappropriate, for example, resulting in excessive cost, reduced reliability, relatively low performance, or excessively large package size. By comparing such methods with this disclosure and referring to the drawings, those skilled in the art will understand other limitations and disadvantages of conventional and traditional methods. Summary of the Invention

[0003] This specification contains structures and associated methods, as well as other features, related to electronic devices having embedded modules and heat transfer or cooling structures. In some instances, when manufactured in a multi-module substrate matrix format, the electronic device includes embedded modules with module assemblies attached to module substrates, without spacers or with a reduced number of spacers. In some instances, the use of spacers is avoided or reduced by an attachment process that minimizes movement of the module substrate during bonding. In some instances, a sintering material comprising solder material and metal particles is used in the attachment process, which has been experimentally found to maintain more uniform bonding thickness and flatness during sintering compared to existing reflow processes. By eliminating or reducing the use of spacers, higher density packaging can be achieved, manufacturing costs can be reduced, manufacturing cycle times and efficiency can be improved, and higher power density can be achieved. In some instances, the module substrate is coupled to device terminals, and a conductive substrate is coupled to the opposite side of the embedded module. In some instances, the device terminals may include lead frames. In some instances, the conductive substrate may be thermally conductive. In some instances, the conductive substrate may be both thermally and electrically conductive.

[0004] In this example, the electronic device includes a first embedded module, which comprises: a first module assembly including a first side of the first module assembly, a second side of the first module assembly opposite to the first side, a lateral side of the first module assembly, a first component terminal adjacent to the first side of the first module assembly, and a second component terminal adjacent to the second side of the first module assembly; a first module substrate coupled to the first component terminal via a first bonding layer; a second module substrate coupled to the second component terminal via a second bonding layer; and a first module encapsulation encapsulating a portion of the first module assembly, the first module substrate, and the second module substrate. A first device substrate is coupled to the first module substrate, and a second device substrate is coupled to the second module substrate. A device terminal is coupled to the first module assembly, and the device encapsulation encapsulates the first embedded module, the device terminal, the first device substrate, and the second device substrate. In this example, the first bonding layer includes a first sintered material, the second bonding layer includes a second sintered material, a portion of the first device substrate is exposed from the device encapsulation, and a portion of the device terminal is exposed from the device encapsulation.

[0005] In this example, the electronic device includes an embedded module comprising a first module assembly having a first module assembly first side, a first module assembly second side opposite to the first module assembly first side, a first component lateral side, a first component terminal adjacent to the first module assembly first side, and a second component terminal adjacent to the first module assembly second side. A first leadframe substrate is coupled to the first component terminal via a first bonding layer. A second leadframe substrate is coupled to the second component terminal via a second bonding layer. A module encapsulation encapsulates the first module assembly, portions of the first leadframe substrate, and portions of the second leadframe substrate. A first device substrate is coupled to the first leadframe substrate, and a second device substrate is coupled to the second leadframe substrate. A device terminal is coupled to the first module assembly, and a device encapsulation encapsulates the embedded module, the device terminal, the first device substrate, and the second device substrate. In this example, the first bonding layer includes a first sintering material, which includes a first solder material and first metal particles.

[0006] In one example, a method of manufacturing an electronic device includes providing an embedded module comprising: a first module assembly including a first module assembly first side, a first module assembly second side opposite to the first module assembly first side, a first component lateral side, a first component terminal adjacent to the first module assembly first side, and a second component terminal adjacent to the first module assembly second side; a first lead frame substrate coupled to the first component terminal via a first bonding layer; a second lead frame substrate coupled to the second component terminal via a second bonding layer; and a module encapsulation encapsulating a portion of the first module assembly, the first lead frame substrate, and the second lead frame substrate. The method includes providing a first device substrate coupled to the first lead frame substrate. The method includes providing a second device substrate coupled to the second lead frame substrate. The method includes providing a device terminal coupled to the first module assembly. The method includes providing a device encapsulation encapsulating the embedded module, the device terminal, the first device substrate, and the second device substrate. In this example, the first bonding layer includes a first sintering. Attached Figure Description

[0007] Figure 1A A cross-sectional view of an example electronic device is shown.

[0008] Figure 1B A cross-sectional view of an example embedded module in an electronic device is shown.

[0009] Figure 2A , Figure 2B , Figure 2C , Figure 2D , Figure 2E , Figure 2F , Figure 2G and Figure 2H A cross-sectional view is shown of an instance method for manufacturing an instance embedded module.

[0010] Figure 3A A top view of the substrate of the example module is shown.

[0011] Figure 3B A partial cross-sectional view of the peripheral portion of an example module substrate with optional spacers is shown.

[0012] Figure 4A , Figure 4B , Figure 4C , Figure 4D , Figure 4E , Figure 4F and Figure 4G A cross-sectional view is shown of an example method for manufacturing an example electronic device. Detailed Implementation

[0013] The following describes various examples of providing semiconductor devices and methods of manufacturing semiconductor devices. These examples are not limiting, and the scope of the appended claims should not be limited to the specific examples disclosed. In the following discussion, the terms "example" and "for example" are non-limiting.

[0014] The figures illustrate general construction methods and may omit descriptions and details of well-known features and techniques to avoid unnecessarily obscuring this disclosure. Furthermore, elements in the figures are not necessarily drawn to scale. For example, some elements in the figures may be enlarged relative to other elements to aid in understanding the examples discussed in this disclosure. The same reference numerals in different figures denote the same elements.

[0015] The term "or" refers to any one or more items in a list connected by "or". As an example, "x or y" means any element in the three-element set {(x),(y),(x,y)}. As another example, "x, y or z" means any element in the seven-element set {(x),(y),(z),(x,y),(x,z),(y,z),(x,y,z)}.

[0016] The terms “comprises / comprising” and / or “includes / including” are “open” terms and specify the presence of the stated feature, but do not exclude the presence or addition of one or more other features.

[0017] The terms “first,” “second,” etc., may be used herein to describe various elements, and these elements should not be limited by these terms. These terms are used only to distinguish one element from another. Thus, for example, without departing from the teachings of this disclosure, a first element discussed herein may be referred to as a second element.

[0018] Unless otherwise specified, the term "coupled" can be used to describe two elements that are in direct contact with each other or to describe two elements that are indirectly connected by one or more other elements. For example, if element A is coupled to element B, then element A may be in direct contact with element B or indirectly connected to element B by intervening element C. Similarly, the terms "above" or "on" can be used to describe two elements that are in direct contact with each other or to describe two elements that are indirectly connected by one or more other elements.

[0019] Other examples are included in this disclosure. Such examples can be found in the figures, claims, or description of this disclosure.

[0020] Figure 1A A cross-sectional view of example electronic device 1 is shown, and Figure 1BA cross-sectional view of an example embedded module 11 in electronic device 1 is shown. Figure 1A and 1B In the example shown, electronic device 1 may include embedded module 11, device substrates 12 and 13, device terminals 14, and device enclosure 15.

[0021] Embedded module 11 may include a first module substrate 111, a second module substrate 112, a module encapsulation 114, and a module assembly 115. The first module substrate 111 may include a conductive structure 1111. In some embodiments, the conductive structure 1111 may include an inward terminal 1111i, an outward terminal 1111o, and a trace 1111t. The second module substrate 112 may include a conductive structure 1121. The conductive structure 1121 may include an inward terminal 1121i and an outward terminal 1121o. In some embodiments, each of the module assemblies 115 may include component terminals 1151, 1152, and 1153.

[0022] The embedded module 11 may further include a bonding layer 116b coupling the module assembly 115 to the first module substrate 111. The embedded module 11 may further include a bonding layer 116t coupling the second module substrate 112 to the module assembly 115. The bonding layer 116b may include, or be referred to as, a bottom-side bonding layer, and the bonding layer 116t may include, or be referred to as a top-side bonding layer.

[0023] The first module substrate 111, the second module substrate 112, and the module enclosure 114 may include, or be referred to as, an electronic package, a semiconductor package, or a package. The electronic package provides protection for the module assembly 115 from exposure to external components or the environment. The electronic package may also provide coupling between the module assembly 115 and external components or other electronic packages.

[0024] Device substrate 12 may include an inward metal layer 121, an outward metal layer 122, and a core layer 123. The inward metal layer 121 may include an inward terminal 121i and a trace 121t. Device substrate 13 may include an inward metal layer 131, an outward metal layer 132, and a core layer 133. The inward metal layer 131 may include an inward terminal 131i and a trace 131t.

[0025] The electronic device 1 may further include a conductive adhesive 113b for electrically connecting device terminals 14 to device substrate 12. The electronic device 1 may further include a conductive adhesive 113t for electrically connecting device substrate 13 to device terminals 14. The conductive adhesive 113b may include, or be referred to as, a bottom-side conductive adhesive, and the conductive adhesive 113t may include, or be referred to as a top-side conductive adhesive.

[0026] Device substrates 12 and 13, device terminals 14, and device enclosure 15 may include, or be referred to as, an electronic package, a semiconductor package, or a package. The electronic package provides protection for the embedded module 11 from exposure to external components or the environment. The electronic package may also provide electrical coupling between external electronic components and the embedded module 11.

[0027] Figure 2A , Figure 2B , Figure 2C , Figure 2D , Figure 2E , Figure 2F , Figure 2G and Figure 2H This illustrates the use of embedded modules for manufacturing examples, such as... Figure 1A and Figure 1B A cross-sectional view of the instance method of embedded module 11. Figure 2A A cross-sectional view of the embedded module 11 during the early manufacturing stage is shown.

[0028] exist Figure 2A In the examples shown, a first module substrate 111 may be provided. In some examples, the first module substrate 111 may include, or be referred to as, a leadframe substrate, a conventional laminated substrate, a molded substrate, a cut micro-leadframe (sMLF), a punched-out MLF, or a wireable micro-leadframe (rtMLF). In some examples, the first module substrate 111 may include copper, a copper alloy, nickel, a nickel alloy, iron, an iron-nickel alloy, or a tin-copper alloy. In some examples, the method for manufacturing the first module substrate 111 may include a stamping method or an etching method. As an example, in the stamping method, the leadframe may be manufactured by stamping or sawing the conductive structure 1111 while sequentially transferring it using a sequential transfer type die-casting device. As an example, in the etching method, the leadframe may be manufactured by chemically etching the conductive structure 1111. In some examples, the etching process may include dry etching (e.g., plasma etching, reactive ion etching (RIE), or sputtering etching) or wet etching (e.g., immersion and spraying). Due to the manufacturing method, the conductive structure 1111 may include conductive paths, leads, terminals, pads, traces, or vias. In some instances, the conductive structure 1111 may include an inward terminal 1111i provided substantially in the upper region, an outward terminal 1111o provided substantially in the lower region, and a trace 1111t connecting the inward terminal 1111i and the outward terminal 1111o. The thickness of the first module substrate 111 may range from about 125 micrometers (µm) to about 250 micrometers. In some instances, the first module substrate 111 may provide a current flow path between the module assembly 115 and the device substrate 12 (FIG. 1).

[0029] Figure 2B A cross-sectional view of the embedded module 11 during the later stages of manufacturing is shown. Figure 2B In the examples shown, a bottom-side sintered material 116b' may be provided. In some examples, the bottom-side sintered material 116b' may include, or be referred to as, a bonding material, a sintered material, a sintered material, or a sintered structure. Figure 2B In the illustrated example, the bottom-side sintered material 116b' may be disposed on or near the inward terminal 1111i. The bottom-side sintered material 116b' may be disposed on the inward terminal 1111i by coating methods such as doctor blade coating, casting, brushing, spraying, slot-fitting coating, curtain coating, slant coating, or blade coating; printing methods such as screen printing, pad printing, or gravure printing; using intermediate techniques between coating and printing such as flexographic printing, offset printing, or inkjet printing; or by directly attaching a conductive adhesive film or conductive adhesive tape. In some examples, the bottom-side sintered material 116b' may comprise a sintering paste, a sintering film, or a sintering tape, the sintering tape comprising sinterable metal particles and solder material that can melt at a lower temperature than the metal particles.

[0030] In some instances, the metal particles may include solderless materials. In some instances, the metal particles may include silver, gold, copper, nickel, or aluminum particles. In some instances, the metal particles may include nano- or micron-sized particles. In some instances, the particle size of the metal particles may range from about 1 nanometer (nm) to about 10 micrometers. In some instances, the metal particles may have a particle diameter greater than about 10 micrometers. In some instances, the solder material may include Sn-based solder, Pb-based solder, or Au-based solder. In some instances, Sn-based solder (lead-free solder) may include pure Sn, Sn-Ag, Sn-Ag-Cu, or Sn-Cu. In some instances, Pb-based solder (lead solder) may include Sn-Pb. In some instances, Au-based solder (hard solder) may include Au-Sn. The solder material may include Sn as a primary constituent material. In some instances, the Sn content in the solder material may be greater than about 90 wt%. However, the specific composition and composition ratio of solder materials can vary according to predetermined specifications.

[0031] In some instances, when the sintering material includes a mixed paste, the ratio (by weight) of solder material to metal particles can be greater than about 1:2.5. In some instances, the ratio (by weight) of solder material to metal particles in the mixed paste can be in the range of about 1:3 to about 1:10. When the content of metal particles (wt%) is greater than 2.5 times or about 3 times the content of solder material (wt%), intermetallic compounds can be readily formed through the reaction therein. The ratio of solder material to metal particles can be varied depending on the type of solder material and metal particles and the type of intermetallic compound. In some instances, in addition to metal particles and solder material, the mixed paste may further include a binder or solvent. The thickness of the sintering material, i.e., the mixed paste, applied to the inward terminals 1111i can be in the range of about 10 micrometers to about 100 micrometers. In some instances, the thickness of the sintering material can be in the range of about 15 micrometers to about 30 micrometers. The sintering material or mixed paste can bond the component terminals 1151 and 1152 ( Figure 1B It is temporarily attached to the inward terminal 1111i of the first module substrate 111.

[0032] Figure 2C A cross-sectional view of the embedded module 11 during the later stages of manufacturing is shown. Figure 2C In the example shown, module component 115 can be provided. Figure 2C In the illustrated example, module assembly 115 may be disposed on a first module substrate 111. In some examples, module assembly 115 may include, or be referred to as, a power component, power device, metal-oxide-semiconductor field-effect transistor (MOSFET), insulated-gate bipolar transistor (IGBT), diode, thyristor, transistor, semiconductor die, semiconductor chip, or semiconductor package. In some examples, module assembly 115 may include component terminals 1151, 1152, and 1153. Component terminals 1151 and 1152 of module assembly 115 may be positioned on a sintered material 116b' disposed on an inward terminal 1111i of the first module substrate 111. The thickness of module assembly 115 may range from about 55 micrometers to about 250 micrometers. In some examples, the thickness of component terminals 1151, 1152, and 1153 may range from about 0.68 micrometers to about 6.55 micrometers. In some examples, module assembly 115 may be configured as a power supply component. In some instances, module component 115 can reliably switch power from tens to hundreds of volts or tens of amperes.

[0033] According to various examples, module assembly 115 is then coupled to first module substrate 111. In some examples, a sintering process can be performed to couple module assembly 115 (e.g., component terminals 1151 and 1152) to inward terminals 1111i of the first module substrate 111. In some examples, the sintering process can be performed while component terminals 1151 and 1152 are temporarily in contact with a mixed paste disposed on the inward terminals 1111i of the first module substrate 111. The sintering process may include a heating process. In some examples, a temperature higher than the melting point of the solder material in the mixed paste can be provided to simultaneously perform a sintering process of metal particles and a soldering process of solder material within the mixed paste. Thus, metal particles can be sintered, and simultaneously, metal particles and solder material can react to form an intermetallic compound. In some examples, the heating temperature or high temperature in the sintering process can be in the range of about 150°C to about 300°C. In some examples, the bonding process can be performed without pressing module assembly 115 onto the first module substrate 111 within the aforementioned temperature range.

[0034] This sintering process forms a bottom-side bonding layer 116b between the module assembly 115 and the first module substrate 111. In some instances, the bottom-side bonding layer 116b may include, or be referred to as, a bonding structure or attachment structure. In some instances, the bottom-side bonding layer 116b may be disposed between the component terminals 1151 and 1152 and the inward terminals 1111i of the first module substrate 111, thereby electrically connecting the component terminals 1151 and 1152 to the inward terminals 1111i of the first module substrate 111. The bottom-side bonding layer 116b may include an intermetallic compound formed by the reaction between metal particles and solder material. In some instances, when the metal particles contain Ag particles and the solder material contains Sn, the reaction may form Ag3Sn. The content of the intermetallic compound in the bottom-side bonding layer 116b may be higher than about 50 wt% or about 60 wt%. The intermetallic compound may be uniformly or relatively uniformly distributed throughout the bottom-side bonding layer 116b. In some instances, the final thickness of the bottom bonding layer 116b can range from about 10 micrometers to about 100 micrometers. In some instances, the final thickness of the bottom bonding layer 116b can range from about 15 micrometers to about 30 micrometers.

[0035] Figure 2D A cross-sectional view of the embedded module 11 during the later stages of manufacturing is shown. Figure 2D In the examples shown, a top-side sintered material 116t' (e.g., a mixed paste) may be provided. In some examples, the top-side sintered material 116b' may include, or be referred to as, a bonding material, a sintered material, or a sintered structure. Figure 2EIn the illustrated example, the top-side sintered material 116t' can be disposed on the component terminal 1153 of the module assembly 115. The top-side sintered material 116t' can be disposed on the component terminal 1153 by coating methods such as doctor blade coating, casting, brushing, spraying, slot extrusion coating, curtain coating, slant coating, or blade coating; printing methods such as screen printing, pad printing, or gravure printing; using intermediate techniques between coating and printing such as flexographic printing, offset printing, or inkjet printing; or directly attaching a conductive adhesive film or conductive adhesive tape. In some examples, similar to the bottom-side sintered material 116b', the top-side sintered material 116t' may also include a sintering paste, a sintering film, or a sintering tape containing sinterable metal particles and solder material. According to this specification, the top-side sintered material 116t' can melt at a lower temperature than the metal particles. The thickness of the sintered material, i.e., the mixture paste 116t', applied to the component terminal 1153 can range from about 10 micrometers to about 100 micrometers. In some instances, the thickness of the sintered material 116t' can range from about 15 micrometers to about 30 micrometers. The sintered material or mixture paste 116t' can temporarily attach the second module substrate 112 to the component terminal 1153. In some instances, the material and properties of the top-side sintered material 116t' can be similar to the material and properties of the bottom-side sintered material 116b' previously described.

[0036] Figure 2E A cross-sectional view of the embedded module 11 during the later stages of manufacturing is shown. Figure 2E In the illustrated example, a second module substrate 112 may be provided. In some examples, the second module substrate 112 may include, or be referred to as, a leadframe substrate, a conventional laminated substrate, a molded substrate, an sMLF, a die-cut MLF, or an rtMLF. In some examples, the second module substrate 112 may include copper, a copper alloy, nickel, a nickel alloy, iron, an iron-nickel alloy, or a tin-copper alloy. In some examples, the material, thickness, and shape of the second module substrate 112 may be similar to the material, thickness, and shape of the first module substrate 111. The second module substrate 112 may include a conductive structure 1121. The conductive structure 1121 may include conductive paths, leads, terminals, pads, traces, or vias. In some examples, the conductive structure 1121 may include an inward terminal 1121i generally disposed in the lower region and an outward terminal 1121o generally disposed in the upper region. The thickness of the second module substrate 112 may range from about 125 micrometers to about 250 micrometers. The second module substrate 112 can provide a current flow path between the module assembly 115 and the device substrate 13 (FIG. 1).

[0037] Figure 2F A cross-sectional view of the embedded module 11 during the later stages of manufacturing is shown. Figure 2FIn the example shown, a second module substrate 112 may be disposed on and coupled to module assembly 115. In some examples, a sintering process may be performed to couple module assembly 115 (e.g., component terminal 1153) to the inward terminal 1121i of the second module substrate 112. For example, the inward terminal 1121i of the second module substrate 112 may be placed on component terminal 1153 of module assembly 115 by sintering material, and then a sintering process may be performed. The sintering process may be related to the above reference. Figure 2C The sintering processes described are similar or identical.

[0038] In some instances, temperatures above the melting point of the solder material in the sintering material can be provided to simultaneously perform the sintering process of the metal particles and the welding process of the solder material within the sintering material. Through this process, the metal particles can be sintered, and simultaneously, the metal particles and the solder material can react to form an intermetallic compound. In some instances, the heating temperature in the sintering process can be in the range of approximately 150°C to approximately 300°C. In some instances, the bonding process can be performed without pressing the module assembly 115 onto the second module substrate 112 within the aforementioned temperature range.

[0039] This sintering process forms a top-side bonding layer 116t between the second module substrate 112 and the module assembly 115. In some instances, the top-side bonding layer 116t may include, or be referred to as, a bonding structure or attachment structure. In some instances, the top-side bonding layer 116t may be disposed between the inward terminal 1112i of the second module substrate 112 and the assembly terminal 1153, thereby electrically connecting the inward terminal 1112i of the second module substrate 112 to the assembly terminal 1153. The top-side bonding layer 116t may include an intermetallic compound formed by the reaction between metal particles and solder material. The final thickness of the top-side bonding layer 116t may range from about 10 micrometers to about 100 micrometers. In some instances, the final thickness of the top-side bonding layer 116t may range from about 15 micrometers to about 30 micrometers.

[0040] Although the bottom-side sintering process for forming the bottom-side bonding layer 116b and the top-side sintering process for forming the top-side bonding layer 116t have been described above as being performed separately, the bottom-side and top-side sintering processes can also be performed simultaneously. In some instances, after placing the module assembly 115 on the bottom-side sintering material 116b' on the first module substrate 111 without performing a sintering process, the top-side sintering material 116t' can then be placed on either the module assembly 115 or the second module substrate 112, and the second module substrate 112 can be placed on the module assembly 115. Next, the sintering processes for the bottom-side sintering material 116b' and the top-side sintering material 116t' can be performed simultaneously. Therefore, through these simultaneous sintering processes, the bottom-side bonding layer 116b and the top-side bonding layer 116t can be provided simultaneously.

[0041] In this way, by replacing the traditional reflow process with the sintering process according to this specification, precise thickness control is possible, while the bonding layer is formed from sintered material or a mixed paste. In fact, although the bonding layer is formed from a mixed paste, the thickness variation is minimal or negligible. In contrast, when using conventional reflow materials, the process involves pressing the module assembly or second module substrate to improve bonding characteristics (jointability), resulting in lateral diffusion of the reflow material and making precise thickness control difficult. Therefore, when the second module substrate is attached to the module assembly, spacers (e.g., copper core balls) must be placed around the module assembly to suppress thickness reduction in the bonding layer. Consequently, spacers, which are not part of device operation, are conventionally placed around the module assembly, and after the embedded module is completed, a process involving the removal of the spacers is required, complicating the manufacturing process and resulting in a larger footprint.

[0042] While the first module substrate 111 and the second module substrate 112 have been described as leadframe substrates, it is conceivable and understood that in some instances, the first module substrate 111 or the second module substrate 112 may comprise another type of substrate, such as a laminated substrate or a preformed substrate. The preformed substrate may be fabricated prior to attachment to an electronic device and may include a dielectric layer between respective conductive layers. The conductive layer may include, for example, copper and may be formed using an electroplating process. The dielectric layer may be a non-optically definable layer and may be attached in the form of a preformed thin film rather than a liquid, and may contain a resin with fillers such as strands, fabrics, or other inorganic particles for rigid or structural support. Because the dielectric layer is non-optically definable, features such as through-holes or openings may be formed using drilling or lasers. In some instances, the dielectric layer may include a prepreg material or an ajinomoto deposited film (ABF). The preformed substrate may contain a permanent core structure or carrier, such as a dielectric material comprising bismaleimide triazine (BT) or FR4, and the dielectric and conductive layers may be formed on the permanent core structure. In other instances, the preform substrate may be a coreless substrate omitting the permanent core structure, and the dielectric and conductive layers may be formed on the sacrificial carrier and removed after the formation of the dielectric and conductive layers and before attachment to an electronic device. The preform substrate may be referred to as a printed circuit board (PCB) or a laminated substrate. Such preform substrates can be formed using semi-additive or modified semi-additive processes.

[0043] Figure 2G A cross-sectional view of the embedded module 11 during the later stages of manufacturing is shown. Figure 2GIn the illustrated example, a module encapsulation 114 may be provided. The module encapsulation 114 may be disposed between a first module substrate 111 and a second module substrate 112. The module encapsulation 114 may encapsulate, surround, or contact the lateral sides of the module assembly 115, the lateral sides of the component terminals 1151, 1152, and 1153, the lateral sides of the bottom bonding layer 116b, and the lateral sides of the top bonding layer 116t. In some examples, the module encapsulation 114 may contact the conductive structure 1111 of the first module substrate 111 and the conductive structure 1121 of the second module substrate 112. In some examples, the module encapsulation 114 is laterally inserted between adjacent traces 1111t of the conductive structure 1111. The module encapsulation 114 may include, or be referred to as, an epoxy molding compound, a resin, a filler-reinforced polymer, a Class B pressure film, or a gel. In some examples, the module encapsulation 114 may be provided by a film-assisted molding process, a transfer molding process, or a compression molding process. In some instances, the thickness of the module enclosure 114 can range from about 75 micrometers to about 450 micrometers. In some instances, the module enclosure 114 can protect the module assembly 115 from exposure to external factors or the environment. In some instances, the module enclosure 114 can be part of, contact with, or surround the device enclosure 15 (see [link to device enclosure 15]). Figure 1A ).

[0044] In some instances, the first module substrate 111, the second module substrate 112, the module encapsulation 114, and the module assembly 115 may be referred to as the embedded module 11. In some instances, the embedded module 11 may include a power module or an embedded power module. In some instances, the thickness of the embedded module 11 may range from approximately 225 micrometers to approximately 950 micrometers. In some instances, the combined thickness of the first module substrate 111, the second module substrate 112, and the module assembly 115 (or the module encapsulation 114) may be defined as the thickness of the embedded module 11. In some instances, the outward terminals 1111o of the first module substrate 111 and the outward terminals 1121o of the second module substrate 112 may be exposed from the module encapsulation 114. In some instances, the bottom side of the outward terminals 1111o of the first module substrate 111 may be coplanar with the bottom side of the module encapsulation 114. In some instances, the top side of the outward terminal 1121o of the second module substrate 112 may be coplanar with the top side of the module enclosure 114.

[0045] Figure 2H A cross-sectional view of the embedded module 11 during the later stages of manufacturing is shown. Figure 2HIn the example shown, a single-cut process can be performed. After the encapsulation process is completed, the individual embedded modules 11 can be separated (i.e., single-cut) by making a single cut along a single-cut line 117a located between adjacent embedded modules. In some instances, during the single-cut process, a sawing tool, such as a diamond blade wheel or a laser beam, can be used to cut through the first module substrate 111, the module encapsulation 114, and the second module substrate 112 to provide the individual embedded modules 11. In some instances, the single-cut process provides the lateral sides of the first module substrate 111, the module encapsulation 114, and the second module substrate 112 in a coplanar configuration.

[0046] Figure 3A A top view of the example module substrate panel 111' or 112' is shown. Figure 3A In the examples shown, module substrate panels 111' or 112' may include a first module substrate unit 111 or a second module substrate unit 112. To achieve high yield, module substrate units 111 or 112 may have rows and columns and may be provided in a matrix format. As described above, in the sintering process according to this disclosure, since the thickness of the bonding layers (e.g., bonding layers 116b and 116t) changes almost continuously, it is not necessary to place spacers between the first module substrate 111 and the second module substrate 112 during the sintering process, thus increasing the area for manufacturing the embedded modules 11 in the module substrates 111 or 112. In some instances, more embedded modules 11 can be provided within the same size module substrate panels 111' or 112' than in the prior art. According to this specification, module substrate panels 112' or 111' may be coupled to the module assembly 115 without or in the absence of any spacers as used in previous module devices. Such spacers include, but are not limited to, copper core solder balls. Figure 3B In some examples shown in the partial cross-sectional views, spacer 310 can be used only around the periphery 11AA of the module substrate panel, with no spacers in the inner portion 11BB. Both approaches increase the usable area of ​​the module substrate panel, reduce the number of parts containing spacers, and avoid the additional processing steps and associated costs required to place spacers onto the module substrate panel. When spacers are used only around the periphery 11AA of the module substrate panel, fewer spacers are required, and placing spacers on the inner portion 11BB of the module substrate panel is avoided, allowing module assemblies to be placed closer together.

[0047] Figure 4A , Figure 4B , Figure 4C , Figure 4D , Figure 4E , Figure 4F and Figure 4G This illustrates the use of examples of electronic devices, such as... Figure 1A A cross-sectional view of an example method of the electronic device 1 shown. Figure 4A A cross-sectional view of electronic device 1 during the early manufacturing stage is shown.

[0048] exist Figure 4A In the illustrated example, a device substrate 12 may be provided. The device substrate 12 may include, or be referred to as, a direct copper-clad substrate, a direct copper-plated substrate, a heat-dissipating substrate, a ceramic substrate, or an active metal brazing (AMB) substrate. In some examples, the device substrate 12 is configured to support the embedded module 11 and the device terminal 14. Figure 1A In some instances, the device substrate 12 can transfer or dissipate heat generated by the embedded module 11 away from the embedded module 11 to a lower portion of the electronic device 1. In some instances, the thickness of the device substrate 12 can range from about 650 micrometers to about 2600 micrometers. The area (or footprint) of the device substrate 12 can be larger than the area (or footprint) of the embedded module 11. The device substrate 12 may include an inward metal layer 121, an outward metal layer 122, and a core layer 123.

[0049] The inward metal layer 121 may include, or be referred to as, a metal plane, metal path, lead, terminal, pad, or trace. The inward metal layer 121 may include a metal, such as copper, aluminum, palladium, titanium, tungsten, titanium / tungsten, nickel, gold, or silver. The inward metal layer 121 may be disposed on the top side of the core layer 123. In some embodiments, the thickness of the inward metal layer 121 may range from about 200 micrometers to about 800 micrometers.

[0050] The inward metal layer 121 can be coupled to the core layer 123 and can be formed by covering the entire top side of the core layer 123 and then etching or removing a portion of the inward metal layer 121 to form an inward terminal 121i and a trace 121t above the top side of the core layer 123. In some instances, the inward terminal 121i may have plating (e.g., Sn) on both the top and lateral sides. The trace 121t may extend to and contact the inward terminal 121i or the device terminal 14. Figure 1A ).

[0051] The outer metal layer 122 may include, or be referred to as, a metal plane, metal path, lead, terminal, pad, or trace. The outer metal layer 122 may include a metal, such as copper, aluminum, palladium, titanium, tungsten, titanium / tungsten, nickel, gold, or silver. The outer metal layer 122 may be disposed on the bottom side of the core layer 123. In some embodiments, the outer metal layer 122 may be formed by covering the entire bottom side of the core layer 123. In some embodiments, the outer metal layer 122 may transfer or dissipate heat generated by the embedded module 11 to the lower portion of the electronic device 1. In some embodiments, the thickness of the outer metal layer 122 may range from about 200 micrometers to about 800 micrometers.

[0052] The core layer 123 may include, or be referred to as, ceramic, a thermally conductive material, or a dielectric. The core layer 123 may support an inward metal layer 121 and an outward metal layer 122. In some instances, the core layer 123 may transfer heat generated from the embedded module 11 to the outward metal layer 122. In some instances, the area (or footprint) of the core layer 123 may be larger than the area (or footprint) of either the inward metal layer 121 or the outward metal layer 122. In some instances, the thickness of the core layer 123 may range from about 250 micrometers to about 1000 micrometers. In some instances, a portion of the inward metal layer 121 and a portion of the outward metal layer 122 may be coupled to each other via one or more conductive vias extending through the core layer 123.

[0053] Figure 4B A cross-sectional view of electronic device 1 during the later stages of manufacturing is shown. Figure 4BIn the illustrated example, a bottom-side conductive adhesive 113b' may be provided. The bottom-side conductive adhesive 113b' may be disposed on the top side of the inward-facing metal layer 121. In some examples, the bottom-side conductive adhesive 113b' may be disposed on the region of the inward-facing metal layer 121 where the embedded module 11 or device terminal 14 is electrically coupled to the device substrate 12. In some examples, the bottom-side conductive adhesive 113b' may include, or is referred to as, solder material or sintering material. In some examples, the bottom-side conductive adhesive 113b' may include Sn, Ag, Pb, Cu, Sn-Pb, Sn37-Pb, Sn95-Pb, Sn-Pb-Ag, Sn-Cu, SnAg, Sn-Au, Sn-Bi, or Sn-Ag-Cu. In some examples, the bottom-side conductive adhesive 113b' may include the sintering material described above for the bottom-side bonding layer 116b of the embedded module 11. In some instances, a bottom-side conductive adhesive 113b' can be provided by coating methods such as blade coating, casting, brushing, spraying, slot extrusion coating, curtain coating, slant coating, or knife-edge coating; printing methods such as screen printing, pad printing, or gravure printing; the use of intermediate techniques between coating and printing such as flexographic printing, offset printing, or inkjet printing; or by directly attaching a conductive adhesive film or conductive adhesive tape to the top side of the inward metal layer 121.

[0054] Figure 4C A cross-sectional view of electronic device 1 during the later stages of manufacturing is shown. Figure 4CIn the illustrated example, embedded module 11 and device terminals 14 may be disposed on device substrate 12. Embedded module 11 may be coupled to device substrate 12 via bottom-side conductive adhesive 113b'. In some examples, conductive structures 1111 of the first module substrate 111 (e.g., outward terminals 1111o) may be coupled to inward metal layers 121 (e.g., inward terminals 121i) of device substrate 12 via bottom-side conductive adhesive 113b'. In some examples, device substrate 12 may couple embedded module 11 to device terminals 14 or to each other. For example, inward metal layers 121 may couple embedded module 11 to device terminals 14. In some examples, inward metal layers 121 may transmit signals from embedded module 11 to device terminals 14, or may transmit signals received by device terminals 14 to embedded module 11. Device terminals 14 may be spaced apart from each other and may be mounted on the outer edge or periphery of device substrate 12. Device terminal 14 can be coupled to the inward metal layer 121 of device substrate 12 (e.g., inward terminal 121i or trace 121t) via bottom-side conductive adhesive 113b'. Device terminal 14 can protrude outward from device substrate 12. In some instances, device terminal 14 can be spaced apart from embedded module 11 and can be disposed outside or external to embedded module 11. In some instances, device terminal 14 can include, or be referred to as, a lead, lead frame, or pin. In some instances, device terminal 14 can include copper, copper alloy, nickel, nickel alloy, iron, or iron-nickel alloy. In some instances, the thickness of device terminal 14 can range from about 125 micrometers to about 800 micrometers. Device terminal 14 can be provided as an electrical contact between electronic device 1 and external components.

[0055] According to various examples, after the embedded module 11 and device terminal 14 are mounted on the device substrate 12, a bonding process can be performed to couple the embedded module 11 and device terminal 14 to the device substrate 12. In some examples, the embedded module 11 and device terminal 14 can be coupled to the device substrate 12 using, for example, a reflow process or a sintering process. In some examples, the reflow process may include providing solder material onto the device substrate 12 as described above, and then providing a heat source, such as hot air, infrared light, or a laser beam, to melt the solder material, thereby allowing the embedded module 11 and device terminal 14 to be electrically coupled to the device substrate 12. In some examples, the sintering process may include providing sintering material onto the device substrate 12 as described above, and then providing a heat source to sinter the sintering material, thereby allowing the embedded module 11 and device terminal 14 to be electrically coupled to the device substrate 12. The sintering process described herein may be similar to the sintering process described in the manufacturing process of the embedded module 11 described above.

[0056] Figure 4D A cross-sectional view of electronic device 1 during the later stages of manufacturing is shown. Figure 4D In the examples shown, a top-side conductive adhesive 113t' may be provided. In some examples, the top-side conductive adhesive 113t' may be disposed on the top side of the embedded module 11 and the device terminal 14. In some examples, the top-side conductive adhesive 113t' may be disposed on the second module substrate 112 of the embedded module 11. In some examples, the top-side conductive adhesive 113t' may be disposed on the conductive structure 1121 of the second module substrate 112. In some examples, the top-side conductive adhesive 113t' may be disposed on the outward terminal 1121o of the conductive structure 1121. The top-side conductive adhesive 113t' may also be disposed on the top side of the device terminal 14. In some examples, the materials and methods for providing the top-side conductive adhesive 113t' may be similar to the materials and methods for providing the bottom-side conductive adhesive 113b' described above.

[0057] Figure 4E A cross-sectional view of electronic device 1 during the later stages of manufacturing is shown. Figure 4E In the illustrated example, device substrate 13 may be disposed on embedded module 11 and device terminal 14. In some examples, device substrate 13 may be disposed on second module substrate 112 of embedded module 11 by top-side conductive adhesive 113t', and on top side of device terminal 14 by top-side conductive adhesive 113t'. In some examples, device substrate 13 may be coupled to embedded module 11 and device terminal 14.

[0058] In some instances, device substrate 13 may include, or be referred to as, a direct copper-clad substrate, a direct copper-plated substrate, a heat-dissipating substrate, a ceramic substrate, or an AMB. In some instances, device substrate 13 may transfer or dissipate heat generated by embedded module 11 to the top portion of electronic device 1 or device terminal 14. In some instances, the thickness of device substrate 13 may range from about 650 micrometers to about 2600 micrometers. In some instances, the area (or footprint) of device substrate 13 may be the same as, greater than, or smaller than the area (or footprint) of device substrate 12. Device substrate 13 may include an inward metal layer 131, an outward metal layer 132, and a core layer 133.

[0059] The inward metal layer 131 may include, or be referred to as, a metal plane, metal path, lead, terminal, pad, or trace. The inward metal layer 131 may include a metal, such as copper, aluminum, palladium, titanium, tungsten, titanium / tungsten, nickel, gold, or silver. The inward metal layer 131 may be disposed on the bottom side of the core layer 133. In some embodiments, the inward metal layer 131 may be coupled to the top side of the conductive structure 1121 (e.g., the outward terminal 1121o) of the second module substrate 112 and the device terminal 14. In some embodiments, the thickness of the inward metal layer 131 may range from about 200 micrometers to about 800 micrometers.

[0060] In some instances, the inward metal layer 131 can be formed by covering the entire bottom side of the core layer 133 and then etching or removing a portion of the inward metal layer 131 to form an inward terminal 131i and a trace 131t above the bottom side of the core layer 133. The inward terminal 131i can be coupled to an outward terminal 1121o of the second module substrate 112. In some instances, the inward terminal 131i can have a plating. The trace 131t can extend to and contact the inward terminal 131i or the device terminal 14.

[0061] In some instances, the outer metal layer 132 may include, or be referred to as, a metal plane, metal path, lead, terminal, pad, or trace. The outer metal layer 132 may include a metal such as copper, aluminum, palladium, titanium, tungsten, titanium / tungsten, nickel, gold, or silver. The outer metal layer 132 may be disposed on the top side of the core layer 133. In some instances, the outer metal layer 132 may cover the entire top side of the core layer 133. In some instances, the outer metal layer 132 may transfer or dissipate heat generated from the embedded module 11 to the lower portion of the electronic device 1. In some instances, the thickness of the outer metal layer 132 may range from about 200 micrometers to about 800 micrometers.

[0062] In some instances, the core layer 133 may include, or be referred to as, ceramic, a thermally conductive material, or a dielectric. The core layer 133 may support an inward metal layer 131 and an outward metal layer 132. In some instances, the core layer 133 may transfer heat generated from the embedded module 11 to the outward metal layer 132. In some instances, the area (or footprint) of the core layer 133 may be larger than the area (or footprint) of either the inward metal layer 131 or the outward metal layer 132. In some instances, the thickness of the core layer 133 may range from about 250 micrometers to about 1000 micrometers. In some instances, a portion of the inward metal layer 131 and a portion of the outward metal layer 132 may be coupled to each other via one or more conductive vias extending through the core layer 133.

[0063] According to various examples, after the device substrate 13 is disposed on the embedded module 11 and the device terminal 14, a bonding process can be performed to couple the device substrate 13 to the embedded module 11 and the device terminal 14. In some examples, the device substrate 13 can be coupled to the embedded module 11 and the device terminal 14 via a reflow process or a sintering process. In some examples, the reflow process or sintering process can be similar to... Figure 4C The process described in the document.

[0064] Figure 4F A cross-sectional view of electronic device 1 during the later stages of manufacturing is shown. Figure 4FIn the illustrated example, a device enclosure 15 may be provided. The device enclosure 15 may encapsulate the embedded module 11, device substrates 12 and 13, and device terminal 14. A portion of the device terminal 14 may extend from or be exposed from the device enclosure 15. For example, the device terminal 14 may protrude outwards from the device enclosure 15. In some embodiments, the outward metal layer 122 of the device substrate 12 and the outward metal layer 132 of the device substrate 13 may be exposed from the device enclosure 15. In some embodiments, the top side of the device enclosure 15 may be coplanar with the outward metal layer 132, and the bottom side of the device enclosure 15 may be coplanar with the outward metal layer 122.

[0065] In some instances, the device encapsulation 15 may include, or be referred to as, a resin, a polymer with fillers, a molding compound, a protective material, or a molding material. In some instances, the device encapsulation 15 may be provided by a film-assisted molding process, a compression molding process, or a transfer molding process. In some instances, the height (or thickness) of the device encapsulation 15 may range from about 1650 micrometers to about 6350 micrometers. The thickness of the device encapsulation 15 may be defined as the thickness of the electronic device 1. In some instances, the device encapsulation 15 may protect the embedded module 11 from exposure to external factors or the environment.

[0066] Figure 4G A cross-sectional view of electronic device 1 during the later stages of manufacturing is shown. Figure 4G In the examples shown, a single-cut process can be performed. In some examples, the individual electronic devices 1 can be separated (i.e., single-cut) by single-cutting along the single-cut line 117b in a matrix-type or strip-type lead frame. In some examples, a sawing tool, such as a diamond blade wheel or a laser beam, can be used in the single-cut process. In some examples, during the single-cut, the device terminals 14 can be cut off and separated into individual electronic devices 1.

[0067] In summary, structures and associated methods related to packaged electronic devices with improved reliability and manufacturability have been disclosed herein. More specifically, structures and methods for improving the manufacturability of packaged electronic devices, when manufactured in a multi-module substrate matrix format, utilize embedded modules with module components attached to module substrates, without spacers or with a reduced number of spacers. In some instances, the use of spacers is avoided or reduced by an attachment process that reduces movement of the module substrate during bonding. In some instances, a sintering material comprising solder material and metal particles is used in the attachment process, which has been experimentally found to maintain more uniform bonding thickness and planarity during sintering compared to existing reflow processes. By eliminating or reducing the use of spacers, higher density packaging can be achieved, manufacturing costs reduced, manufacturing cycle times and efficiency improved, and higher power density achieved. In some instances, the module substrate is coupled to device terminals, and a conductive substrate is coupled to the opposite side of the embedded module. In some instances, the device terminals may include lead frames. In some instances, the conductive substrate may be thermally conductive. In some instances, the conductive substrate can be both thermally and electrically conductive.

[0068] This disclosure contains references to certain examples; however, those skilled in the art will understand that various changes can be made and equivalents can be substituted without departing from the scope of this disclosure. Furthermore, modifications can be made to the disclosed examples without departing from the scope of this disclosure. Therefore, it is intended that this disclosure be limited to the disclosed examples, but rather to include all examples falling within the scope of the appended claims.

Claims

1. An electronic device, characterized in that, include: A first embedded module, the first embedded module comprising: The first module component includes a first module component first side, a first module component second side opposite to the first module component first side, a first module component lateral side, a first component terminal adjacent to the first module component first side, and a second component terminal adjacent to the first module component second side; A first module substrate, wherein the first module substrate is coupled to the first component terminal via a first bonding layer; A second module substrate, the second module substrate being coupled to the second component terminal via a second bonding layer; and A first module encapsulation material encapsulates a portion of the first module component, a portion of the first module substrate, and a portion of the second module substrate. A first device substrate, the first device substrate being coupled to the first module substrate; A second device substrate, the second device substrate being coupled to the second module substrate; Device terminals, said device terminals being coupled to the first module assembly; and A device encapsulation that encapsulates the first embedded module, the device terminals, the first device substrate, and the second device substrate; in: The first bonding layer includes a first sintered material; The second bonding layer includes a second sintered material; A portion of the first device substrate is exposed from the device encapsulation; and A portion of the device terminals is exposed from the device enclosure.

2. The electronic device according to claim 1, characterized in that: The first sintering material includes a first solder material and first metal particles; and The weight ratio of the first solder material to the first metal particles is in the range of 1:3 to 1:

10.

3. The electronic device according to claim 2, characterized in that: The second sintering material includes a second solder material and second metal particles.

4. The electronic device according to claim 2, characterized in that: The first metal particles include particles ranging in size from 1 nanometer to 10 micrometers.

5. The electronic device according to claim 4, characterized in that: The first metal particle includes one or more of silver, gold, copper, nickel, or aluminum.

6. The electronic device according to claim 2, characterized in that: The first solder material includes Sn-based solder.

7. The electronic device according to claim 1, characterized in that: The first module encapsulation includes a first side and a second side opposite to the first side; The first module encapsulation encapsulates the lateral side of the first module component, a portion of the first component terminal, a portion of the first bonding layer, a portion of the second component terminal, and a portion of the second bonding layer; A portion of the first module substrate is exposed from the first side of the first module encapsulation; and A portion of the second module substrate is exposed from the second side of the first module encapsulation.

8. The electronic device according to claim 1, characterized in that: The first module substrate includes a first lead frame substrate.

9. The electronic device according to claim 8, characterized in that: The second module substrate includes a second lead frame substrate.

10. The electronic device according to claim 1, characterized in that, Further includes: The second module component includes a first side of the second module component, a second side of the second module component opposite to the first side of the second module component, a lateral side of the second module component, a third component terminal adjacent to the first side of the second module component, and a fourth component terminal adjacent to the second side of the second module component. in: The first module encapsulation includes the second module component on the lateral side of the second module component.

11. The electronic device according to claim 1, characterized in that: The first embedded module does not have a spacer extending between the first module substrate and the second module substrate.

12. An electronic device, characterized in that, include: An embedded module, the embedded module comprising: The first module component includes a first module component first side, a first module component second side opposite to the first module component first side, a first component lateral side, a first component terminal adjacent to the first module component first side, and a second component terminal adjacent to the first module component second side; A first lead frame substrate, the first lead frame substrate being coupled to the first component terminal via a first bonding layer; A second lead frame substrate, the second lead frame substrate being coupled to the second component terminal via a second bonding layer; and A module encapsulation material that encapsulates a portion of the first module assembly, a portion of the first lead frame substrate, and a portion of the second lead frame substrate; A first device substrate, the first device substrate being coupled to the first lead frame substrate; A second device substrate, the second device substrate being coupled to the second lead frame substrate; Device terminals, said device terminals being coupled to the first module assembly; and A device encapsulation that encapsulates the embedded module, the device terminals, the first device substrate, and the second device substrate; in: The first bonding layer includes a first sintered material, the first sintered material comprising: First solder material; and First metal particle.

13. The electronic device according to claim 12, characterized in that: The first metal particle comprises one or more of silver, gold, copper, nickel, or aluminum; and The weight ratio of the first solder material to the first metal particles is greater than 1:2.

5.

14. The electronic device according to claim 12, characterized in that, The first bonding layer comprises an intermetallic compound, wherein the weight percentage of the intermetallic compound is greater than 50%.

15. The electronic device according to claim 14, characterized in that: The intermetallic compound is uniformly distributed throughout the first bonding layer.

16. The electronic device according to claim 12, characterized in that: The embedded module has no spacers.

17. The electronic device according to claim 12, characterized in that: The second bonding layer includes the first sintered material.

18. A method for manufacturing an electronic device, characterized in that, include: An embedded module is provided, the embedded module comprising: The first module component includes a first module component first side, a first module component second side opposite to the first module component first side, a first component lateral side, a first component terminal adjacent to the first module component first side, and a second component terminal adjacent to the first module component second side; A first lead frame substrate, the first lead frame substrate being coupled to the first component terminal via a first bonding layer; A second lead frame substrate, the second lead frame substrate being coupled to the second component terminal via a second bonding layer; and A module encapsulation material that encapsulates a portion of the first module assembly, a portion of the first lead frame substrate, and a portion of the second lead frame substrate; A first device substrate is provided, the first device substrate being coupled to the first lead frame substrate; A second device substrate is provided, the second device substrate being coupled to the second lead frame substrate; Provide device terminals, said device terminals being coupled to the first module assembly; and A device encapsulation is provided, the device encapsulation encapsulating the embedded module, the device terminals, the first device substrate, and the second device substrate; in: The first bonding layer includes a first sintered material; and The second bonding layer includes a second sintered material.

19. The method according to claim 18, characterized in that, The embedded module includes: The first sintering material is provided, the first sintering material comprising a first solder material and first metal particles; The second sintering material is provided, the second sintering material comprising a second solder material and second metal particles; The first lead frame substrate is attached to the first component terminal using the first sintering material; The second lead frame substrate is attached to the second component terminal using the second sintering material; Exposing the first sintering material to a high temperature causes the first solder material and the first metal particles to react to form a first intermetallic compound; and The second sintering material is exposed to the high temperature to cause the second solder material and the second metal particles to react to form a second intermetallic compound.

20. The method according to claim 19, characterized in that: The high temperature is in the range of 150°C to 300°C; and The exposure of the first sintered material and the exposure of the second sintered material are performed without the use of spacers between the first lead frame substrate and the second lead frame substrate.

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