Semiconductor laser element and light emitting device

Abstract

The invention relates to the technical field of lasers, in particular to a semiconductor laser element and a light emitting device. The semiconductor laser element includes a substrate, an epitaxial structure, an isolation layer, and an insulating layer. The epitaxial structure is located on the substrate; a ridge part is formed on one side, far away from the substrate, of the epitaxial structure; the isolation layer at least covers the table top and the side wall of the ridge part; the insulating layer covers the epitaxial structure and at least part of the isolation layer. Through the arrangement, the material of the insulating layer can be effectively prevented from diffusing into the epitaxial structure, and the reliability of the semiconductor laser element is improved.

Description

Technical Field

[0001] This invention relates to the field of semiconductor manufacturing technology, and in particular to a semiconductor laser element and a light emitting device. Background Technology

[0002] Semiconductor lasers are light source devices widely used in communications, sensing, medical, and industrial processing. Their core working principle relies on the refractive index difference between the waveguide layer and the confinement layer in their internal structure to limit the lasing mode, thereby ensuring the stability of the laser's far-field spot characteristics and output power.

[0003] In the fabrication of semiconductor lasers, a typical process involves etching a ridge structure and then covering both sides with an insulating layer to form a current injection channel. This structural design helps ensure efficient current transmission and confinement within the laser. However, when the insulating layer is deposited directly on both sides of the GaN ridge, Si atoms can easily diffuse into the epitaxial layer, thus affecting the laser's performance and reliability. Summary of the Invention

[0004] In view of at least one deficiency of the prior art, the purpose of this application is to provide a semiconductor laser element that can avoid the diffusion phenomenon of insulating materials, thereby improving the performance and reliability of the laser element.

[0005] In a first aspect, embodiments of this application provide a semiconductor laser element, the semiconductor laser element comprising at least a substrate; An epitaxial structure is located on the substrate; the epitaxial structure has a mesa on the side away from the substrate, the mesa having a ridge, the ridge having an upper surface and a side surface connecting the upper surface and the mesa; An isolation layer covers the side surface of the ridge, or covers both the side and top surfaces of the ridge; the isolation layer comprises a metal layer structure; An insulating layer, at least covering the mesa of the epitaxial structure and at least a portion of the isolation layer, wherein the insulating layer is made of Si.

[0006] Secondly, this application also provides a light emitting device, which employs a semiconductor laser element as described in the above embodiments.

[0007] Based on the above, compared with the prior art, the semiconductor laser element provided in this application can effectively prevent the material in the insulating layer from diffusing into the epitaxial structure through the structural design of the isolation layer, reduce the diffusion phenomenon and effectively achieve heat dissipation, thereby effectively improving the performance and reliability of the semiconductor laser.

[0008] Other features and beneficial effects of this application will be set forth in the following description and will be apparent in part from the description or may be learned by practicing this application. Attached Figure Description

[0009] To more clearly illustrate the technical solutions in the embodiments of this application or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0010] Figure 1 This is a top view schematic diagram of a semiconductor laser element provided in an embodiment of this application; Figure 2 yes Figure 1 A sectional view along the dashed line A; Figures 3-7 These are cross-sectional views of various deformations of a semiconductor laser element provided in the embodiments of this application.

[0011] Figure label: 10-Substrate; 20-Epipolar structure; 21-First semiconductor layer; 21a-First cladding layer; 21b-First waveguide layer; 22-Active layer; 23-Second semiconductor layer; 23a-Second waveguide layer; 23b-Second cladding layer; 20a-Ridge; 30-Isolation layer; 40-Insulating layer; 50-Ohmic contact layer; 61-First electrode; 62-Second electrode. Detailed Implementation

[0012] To make the objectives, technical solutions, and advantages of the embodiments of this application clearer, the technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings; the technical features designed in the different embodiments of this application described below can be combined with each other as long as they do not conflict with each other.

[0013] This application provides a semiconductor laser element, which includes at least a substrate 10, an epitaxial structure 20, an isolation layer 30, and an insulating layer 40. The epitaxial structure 20 is located on the substrate 10; the epitaxial structure 20 has a mesa on the side away from the substrate 10, the mesa forming a ridge 20a, the ridge 20a having an upper surface and a side surface connecting the upper surface and the mesa; the isolation layer 30 covers the side surface of the ridge 20a, or covers both the side surface and the upper surface of the ridge 20a; the isolation layer 30 includes a metal layer structure; the insulating layer 40 at least covers the mesa of the epitaxial structure 20 and at least a portion of the isolation layer 30, the insulating layer 40 being made of Si.

[0014] The design of the isolation layer 30 described above can effectively prevent the Si material in the insulating layer 40 from diffusing from the ridge 20a into the epitaxial structure 20, which would lead to a decrease in carrier mobility and an increase in voltage. At the same time, the isolation layer 30 with a metal layer structure can improve the thermal conductivity and achieve heat dissipation. Furthermore, the introduced isolation layer 30 can effectively reduce the interface loss between the insulating layer 40 and the ridge 20a and avoid phase abrupt changes at the interface.

[0015] In some embodiments, the isolation layer 30 extends from the side surface of the ridge 20a toward the platform to further isolate Si diffusion while effectively improving current diffusion capability and promoting current flow.

[0016] In some embodiments, the distance from the farthest end of the insulating layer 30 extending from the side surface of the ridge 20a toward the table surface to the side surface of the ridge 20a is between 0 and 2 μm, which can effectively avoid the risk of leakage due to excessive distance.

[0017] In some embodiments, the isolation layer 30 extends from the side surface of the ridge 20a toward the mesa, and the surface of the isolation layer 30 on the mesa away from the epitaxial structure 20 is flush with the surface of the insulating layer 40 on the side away from the epitaxial structure 20, so as to further improve the heat dissipation capability of the device.

[0018] In some embodiments, when viewed from above the semiconductor laser element, the projection of the ridge 20a falls within the projection range of the isolation layer 30, and the distance between the projection outline of the ridge 20a and the projection outline of the isolation layer 30 is between 0 and 2 μm, so as to ensure the effect while avoiding the risk of leakage.

[0019] In some embodiments, the isolation layer 30 is selected from a single metal layer, a metal laminate, or a composite laminate. The material of the single metal layer includes one metal selected from Al, Ti, Cr, Pt, Pd, Ni, and Au. The metal laminate includes at least two single metal layers selected from Al, Ti, Cr, Pt, Pd, Ni, and Au. The composite laminate includes a laminate structure composed of an ohmic contact layer 50 and at least one single metal layer selected from Al, Ti, Cr, Pt, Pd, Ni, and Au.

[0020] In some embodiments, the refractive index of the isolation layer 30 is between that of the insulating layer 40 and the refractive index of the epitaxial structure 20, so as to better reduce more interface reflection loss and improve beam quality.

[0021] In some embodiments, an ohmic contact layer 50 is also included, which covers the upper surface of the ridge 20a to reduce contact resistance and improve current conduction capability.

[0022] In some embodiments, an ohmic contact layer 50 is further included, which covers the upper surface of the ridge 20a and extends to cover the side surface of the ridge 20a, and the isolation layer 30 covers the surface of the ohmic contact layer 50 located on the side surface of the ridge 20a.

[0023] In some embodiments, the included angle β formed between the side surface of the ridge 20a and the platform is between 40° and 90°.

[0024] In some embodiments, the thermal conductivity of the isolation layer 30 is greater than that of the insulation layer 40, so as to effectively improve the heat dissipation effect.

[0025] In some embodiments, the semiconductor laser further includes a first electrode 61 and a second electrode 62, wherein the first electrode 61 is located on the surface of the substrate 10 away from the epitaxial structure 20, and the second electrode 62 is located on the surface of the insulating layer 40 away from the epitaxial structure 20; the isolation layer 30 is located within the top view projection range of the first electrode 61.

[0026] In some embodiments, the epitaxial structure 20 includes at least a first cladding layer 21a, a first waveguide layer 21b, an active layer 22, a second waveguide layer 23a, and a second cladding layer 23b stacked sequentially on the substrate 10; the ridge 20a extends from the surface of the epitaxial structure 20 away from the substrate 10 to the surface closer to the substrate 10 to expose the second cladding layer 23b or the second waveguide layer 23a.

[0027] In some embodiments, the epitaxial structure 20 further includes an electron blocking layer located in the second waveguide layer 23a to enhance electron confinement and further avoid the risk of leakage.

[0028] In some embodiments, the first cladding layer 21a comprises an N-type doped gallium-containing nitride, the first waveguide layer 21b comprises an N-type doped gallium-containing nitride, the second confinement layer comprises a P-type doped gallium-containing nitride, and the second waveguide layer 23a comprises a P-type doped gallium-containing nitride.

[0029] This application also provides a light emitting device that employs a semiconductor laser element as described in any of the above embodiments, so as to effectively improve the performance and reliability of the light emitting device.

[0030] The technical solution of this application will be clearly and completely described below with reference to the accompanying drawings in the embodiments of this application and through various specific implementation methods.

[0031] Example 1 Please see Figure 1 , Figure 1 This is a top view schematic diagram of a semiconductor laser element provided in an embodiment of this application. To achieve at least one or more of the aforementioned advantages, an embodiment of this application provides a semiconductor laser element that includes at least a substrate 10, an epitaxial structure 20, an ohmic contact layer 50, and an insulating layer 40.

[0032] like Figure 1 As shown, the semiconductor laser element includes a first direction X and a second direction Y, which are perpendicular to each other.

[0033] Semiconductor laser elements can have polygonal shapes, such as triangular, hexagonal, rectangular, or square shapes. For example... Figure 1 As shown, the size of the semiconductor laser element can be, for example, a square shape or a rectangular shape of similar size with dimensions of 1200μm×200μm, 600μm×200μm, 600μm×150μm, 1200μm×150μm, 1100μm×120μm, 800μm×200μm and 800μm×150μm, but is not particularly limited thereto.

[0034] The substrate 10 includes, but is not limited to, gallium nitride substrate 10, gallium arsenide substrate 10, sapphire substrate 10, silicon carbide substrate 10, etc. In this embodiment, the substrate 10 can be a growth substrate 10 or a support substrate 10. The thickness of the substrate 10 is, for example, at least 40 μm and / or at most 400 μm, preferably 50 μm, 60 μm, 80 μm, 100 μm, 120 μm, and 150 μm.

[0035] The epitaxial structure 20 is located on the substrate 10. In the embodiments of this application, the epitaxial structure 20 can be formed on the substrate 10 by metal-organic chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE), hydride vapor deposition (HVPE), physical vapor deposition (PVD), or ion plating.

[0036] In this embodiment, the epitaxial structure 20 preferably includes at least a first semiconductor layer 21, an active layer 22, and a second semiconductor layer 23, which are sequentially stacked on the substrate 10 from bottom to top. The first semiconductor layer 21 includes at least a first cladding layer 21a and a first waveguide layer 21b, and the second semiconductor layer 23 includes at least a second waveguide layer 23a and a second cladding layer 23b. Specifically, the second cladding layer 23b is an N-type doped material, used to confine the light field in the direction towards the substrate 10; the first cladding layer 21a is a P-type doped material, used to confine the light field in the direction away from the substrate 10. The N-type doping of the second waveguide layer 23a and the P-type doping of the first waveguide layer 21b enhance the confinement of charge carriers, increase the distribution of charge carriers in the active layer 22, improve the light confinement factor, reduce the threshold current, and improve the luminous efficiency. Preferably, the first waveguide layer 21b, the second waveguide layer 23a, the first cladding layer 21a, and the second cladding layer 23b are any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, and BN. Further preferably, the first cladding layer 21a comprises an N-type doped gallium-containing nitride, the first waveguide layer 21b comprises an N-type doped gallium-containing nitride, the second confinement layer comprises a P-type doped gallium-containing nitride, and the second waveguide layer 23a comprises a P-type doped gallium-containing nitride.

[0037] The active layer 22 can be a single quantum well layer composed of indium gallium nitride / gallium nitride, or a multiple quantum well layer composed of indium gallium nitride / gallium nitride grown in multiple alternating periods, to provide optical gain.

[0038] Of course, the epitaxial structure 20 may also include other functional layers. For example, the first semiconductor layer 21 may also include a buffer layer (not shown). The buffer layer may be an n-type material layer made of GaN-based group III-V nitride semiconductor, or an undoped material layer. More specifically, for example, the buffer layer is an n-GaN layer, and Si is suitable as an n-type dopant. For example, the second semiconductor layer 23 may also include an electron blocking layer, a contact layer (not shown), etc., but this embodiment is not limited thereto. The carrier blocking layer is formed on the second waveguide layer 23a, and the carrier blocking layer is composed of a gallium nitride-based semiconductor layer with added p-type dopant. More specifically, for example, the electron blocking layer may be composed of a p-type AlGaN layer, etc., and Mg is suitable as a p-type dopant. It should be noted that in one embodiment of the present invention, the electron blocking layer may be formed between the active layer 22 and the second waveguide layer 23a, or may be formed in the middle of the second waveguide layer 23a. In addition, a structure in which the electron blocking layer is not provided in the epitaxial structure 20 may be adopted. Even without an electron blocking layer, it retains its function as a semiconductor laser element.

[0039] The epitaxial structure 20 has a mesa on the side away from the substrate 10, and the mesa has a ridge 20a formed thereon, thereby enabling the formation of an effective refractive index waveguide. The ridge 20a extends along a first direction X of the semiconductor laser element. In this embodiment, the ridge 20a and the mesa are formed by selective etching on the epitaxial structure 20. Specifically, the epitaxial structure 20 is formed by removing only a portion of the first semiconductor layer 21, or simultaneously removing the first semiconductor layer 21, the active layer 22, and a portion of the second semiconductor layer 23. For example, the epitaxial structure 20 is removed until the cladding layer, waveguide layer, or electron blocking layer is exposed. The specific design is made according to actual needs, and this embodiment does not limit this.

[0040] The ridge 20a has an upper surface and a side surface connecting the upper surface and the mesa. In this embodiment, the upper surface of the ridge 20a is the surface of the second semiconductor layer 23, and the mesa exposes a portion of the second semiconductor layer 23. For example, the width of the ridge 20a along the second direction Y is between 2 and 45 μm. The thickness of the ridge 20a is between 0.3 and 0.7 μm.

[0041] The shape of the ridge 20a is not limited to a trapezoidal frustum shape that is wide on the bottom side and gradually narrows as it approaches the top strip. The base angles of this trapezoidal frustum shape are 40° to 90°. Figure 2As shown, the included angle β formed between the side surface of the ridge 20a and the platform is between 40° and 90°; the shape of the ridge 20a can also be an inverted trapezoidal truncated shape that gradually narrows as it approaches the bottom surface; in addition, the shape of the ridge 20a can also be a column with a side surface perpendicular to the platform, and the specific design can be reasonably set according to actual needs. This embodiment does not limit the design here.

[0042] The semiconductor laser further includes a first electrode 61 and a second electrode 62. The first electrode 61 is located on the surface of the substrate 10 away from the epitaxial structure 20, and the second electrode 62 is located on the surface of the insulating layer 40 away from the epitaxial structure 20. The first electrode 61 is electrically connected to the first semiconductor layer 21, and the second electrode 62 is electrically connected to the second semiconductor layer 23. Simultaneously, the first electrode 61 and the second electrode 62 are typically made of metal and electrically connected to the outside environment to control the conduction of the semiconductor laser.

[0043] The material of the second electrode 62 may include any one of Pd, Pt, Ni, Au, Ti, W, Cu, Ag, Zn, Sn, In, Al, Ir, Rh, or ITO. The material of the first electrode 61 may include any one or a combination of two or more of Ni, Ti, Pd, Pt, Au, Al, TiN, ITO, and IGZO, and is not limited thereto.

[0044] To effectively address the issue of insulating material diffusing into the epitaxial structure 20 through the ridge 20a during the deposition process in the prior art, this application embodiment designs an isolation layer 30 containing a metal layer structure at the ridge 20a location.

[0045] Specifically, the isolation layer 30 covers the side surface of the ridge 20a, or covers both the side and top surfaces of the ridge 20a. The isolation layer 30, which includes a metal layer structure, effectively prevents Si atoms from diffusing from the insulation into the epitaxial structure 20, thereby preventing the Si atoms from causing a compensation effect on p-type Mg doping and affecting hole current injection. Simultaneously, since the thermal conductivity of the metal layer structure is superior to that of the insulating layer 40, the coverage of the isolation layer 30 improves the heat dissipation of the device, further enhancing its reliability and lifespan. Furthermore, the design based on the isolation layer 30 effectively protects the ridge 20a from damage caused during high-temperature electrode fabrication or other processes.

[0046] Furthermore, if the sidewall of the ridge 20a is directly covered by the insulating layer 40, the significant difference in refractive index between the ridge 20a and the insulating layer 40 can easily introduce more interface reflection loss, potentially leading to a phase abrupt change at the interface, causing multimode oscillation or mode competition, and reducing beam quality. Therefore, in this embodiment, by introducing the isolation layer 30, interface loss can be effectively reduced, phase abrupt changes at the interface can be avoided, and beam quality can be improved. Preferably, the refractive index of the isolation layer 30 is between the refractive index of the insulating layer 40 and the refractive index of the epitaxial structure 20.

[0047] In this embodiment, the isolation layer 30 covers the side surface of the ridge 20a away from the semiconductor laser cavity surface, such as... Figure 1 As shown, the insulating layer 30 covers the side surfaces of the ridge 20a on both sides along the second direction Y to isolate the insulating layer 40 from direct contact with the ridge 20a. In addition, the insulating layer 30 extends to cover the upper surface of the ridge 20a, which not only further isolates the insulating layer 40 material, but also effectively improves the current spreading capability of the ridge 20a and promotes the flow of current between the ridge 20a and the electrode.

[0048] Optionally, the isolation layer 30 may employ, but is not limited to, a metal layer structure capable of forming good adhesion with the epitaxial structure 20, having a large work function, and being able to block the diffusion of Si atoms. Furthermore, the thermal conductivity of the isolation layer 30 is greater than that of the insulating layer 40, thereby facilitating heat dissipation.

[0049] As an example, the isolation layer 30 is selected from a single-element metal layer, a metal laminate, or a composite laminate. The single-element metal layer is composed of one metal selected from Al, Ti, Cr, Pt, Pd, Ni, and Au. The metal laminate is composed of at least two single-element metal layers selected from Al, Ti, Cr, Pt, Pd, Ni, and Au. The composite laminate is a stacked structure composed of an ohmic contact layer 50 and at least one single-element metal layer selected from Al, Ti, Cr, Pt, Pd, Ni, and Au. Further, the thickness of each layer in the metal laminate or composite laminate is between 0 and 1000 nm to avoid excessive thickness affecting device performance.

[0050] It should be understood that this embodiment is not limited to the metal materials mentioned above. Based on the concept of this application, those skilled in the art can also replace the metal materials mentioned above with other metal materials that can isolate the diffusion of Si atoms, all of which fall within the protection scope of this application.

[0051] Furthermore, such as Figure 3 As shown, the isolation layer 30 extends from the side surface of the ridge 20a toward the platform to ensure that the bottom corner of the ridge 20a can be adequately isolated from the diffusion of insulating material, while also further improving the heat dissipation effect.

[0052] In a preferred embodiment, the isolation layer 30 is located within the top-view projection range of the first electrode 61 to avoid leakage risk and improve device reliability. Preferably, as... Figure 4 As shown, the distance d from the farthest end of the insulating layer 30 extending from the side surface of the ridge 20a towards the platform to the side surface of the ridge 20a is between 0 and 2 μm. This limitation effectively avoids the risk of leakage due to excessive distance. Alternatively, as... Figure 1 As shown, when viewed from above the semiconductor laser element, the projection of the ridge 20a falls within the projection range of the isolation layer 30, and the distance W between the projection outline of the ridge 20a and the projection outline of the isolation layer 30 is between 0 and 2 μm.

[0053] In another embodiment, the insulating layer 30 extends from the side surface of the ridge 20a toward the platform, and the surface of the insulating layer 30 on the platform, away from the epitaxial structure 20, is flush with the surface of the insulating layer 40 on the same side. Specifically, as follows... Figure 5 , 6 As shown in Figure 7, when the isolation layer 30 on the platform is at the same height as the insulating layer 40, the second electrode 62 located above the ridge 20a extends from the upper surface of the ridge 20a toward the side wall of the isolation layer 30 and extends to cover the insulating layer 40. Compared with the design where the isolation layer 30 on the platform is lower than the insulating layer 40, this allows the second electrode 62 on the ridge 20a to have a larger contact area with the isolation layer 30, thereby further improving the heat dissipation capacity of the device.

[0054] In this embodiment, the insulating layer 40 at least covers the mesa of the epitaxial structure 20 and at least a portion of the isolation layer 30 to prevent current leakage. The insulating layer 40 is made of Si, for example, silicon oxide or silicon nitride. The film thickness of the insulating layer 40 is preferably between 100 nm and 500 nm. The insulating layer 40 can be selectively applied according to actual needs; in this embodiment, the insulating layer 40 preferably extends to cover the sidewalls of the epitaxial structure 20.

[0055] The semiconductor laser element also includes an electron blocking layer, which prevents electrons in the active layer 22 from escaping from the second cladding layer 23b when the semiconductor laser is forward-biased, thereby affecting the output power of the semiconductor laser. Preferably, the electron blocking layer is a P-type semiconductor layer with the same conductivity type as the second cladding layer 23b and / or the second waveguide layer 23a, including but not limited to P-type doped aluminum gallium nitride, to form a potential barrier between the second waveguide layer 23a and the second cladding layer 23b, preventing electrons from escaping from the active layer 22. Unlike the above, in this embodiment, the electron blocking layer is preferably located inside the second waveguide layer 23a. That is, by placing the electron blocking layer deeper inside the second waveguide layer 23a, the electron confinement is enhanced, effectively avoiding the leakage risk that may occur at the bottom corner of the ridge 20a when the isolation layer 30 extends to the mesa, thereby achieving the goal of avoiding Si atom diffusion, improving heat dissipation, and reducing leakage risk.

[0056] Based on the above embodiments, the semiconductor laser element further includes an ohmic contact layer 50, the material of which includes, but is not limited to, ITO, ZnO, IZO, Ga2O3, etc.

[0057] In one embodiment, the ohmic contact layer 50 covers the upper surface of the ridge 20a. By providing the ohmic contact layer 50, the formation of a Schottky contact between the ridge 20a and the second electrode 62 can be effectively avoided, reducing ohmic contact resistance and improving current conduction capability. Figure 6 As shown, when the ohmic contact layer 50 covers the upper surface of the ridge 20a, the isolation layer 30 may cover only the side surface of the ridge 20a, or it may cover the side surface of the ridge 20a and extend to cover the tabletop.

[0058] In another embodiment, the ohmic contact layer 50 covers the upper surface of the ridge 20a and extends to cover the side surface of the ridge 20a, and the insulating layer 30 covers the surface of the ohmic contact layer 50 located on the side surface of the ridge 20a. Figure 7 As shown, when the ohmic contact layer 50 extends from the upper surface of the ridge 20a to cover the side surface of the ridge 20a, the insulating layer 30 can either cover only the surface of the ohmic contact layer 50 located on the side surface of the ridge 20a, or it can extend to cover the table surface. This not only effectively reduces the contact resistance, but also further prevents the diffusion of Si material in the insulating layer 40.

[0059] Example 2 This application also provides a light emitting device, which includes at least one semiconductor laser element as described in Embodiment 1 above, which can effectively improve the light emission performance and can be applied to light emitting devices using semiconductor laser elements in various industries.

[0060] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of this application, and are not intended to limit them. Although this application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some or all of the technical features therein. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of this application.

Claims

1. A semiconductor laser element, characterized in that, The semiconductor laser element includes: Substrate; An epitaxial structure is located on the substrate; the epitaxial structure has a mesa on the side away from the substrate, the mesa having a ridge, the ridge having an upper surface and a side surface connecting the upper surface and the mesa; An isolation layer covers the side surface of the ridge, or covers both the side and top surfaces of the ridge; the isolation layer comprises a metal layer structure; An insulating layer, at least covering the mesa of the epitaxial structure and at least a portion of the isolation layer, wherein the insulating layer is made of Si.

2. The semiconductor laser element according to claim 1, characterized in that: The isolation layer extends from the side surface of the ridge toward the platform.

3. The semiconductor laser element according to claim 1, characterized in that: The distance from the farthest end of the isolation layer extending from the side surface of the ridge towards the platform to the side surface of the ridge is between 0 and 2 μm.

4. The semiconductor laser element according to claim 1, characterized in that: The insulating layer extends from the side surface of the ridge toward the platform, and the surface of the insulating layer on the platform away from the epitaxial structure is flush with the surface of the insulating layer on the side away from the epitaxial structure.

5. The semiconductor laser element according to claim 1, characterized in that: Viewed from above the semiconductor laser element, the projection of the ridge falls within the projection range of the isolation layer, and the distance between the projection outline of the ridge and the projection outline of the isolation layer is between 0 and 2 μm.

6. The semiconductor laser element according to claim 1, characterized in that: The isolation layer is selected from a single metal layer, a metal laminate, or a composite laminate. The single metal layer is composed of one metal selected from Al, Ti, Cr, Pt, Pd, Ni, and Au. The metal laminate is composed of at least two single metal layers selected from Al, Ti, Cr, Pt, Pd, Ni, and Au. The composite laminate is a laminate structure composed of an ohmic contact layer and at least one single metal layer selected from Al, Ti, Cr, Pt, Pd, Ni, and Au.

7. The semiconductor laser element according to claim 1, characterized in that: The refractive index of the isolation layer is between that of the insulating layer and the refractive index of the epitaxial structure.

8. The semiconductor laser element according to claim 1, characterized in that: It also includes an ohmic contact layer that covers the upper surface of the ridge.

9. The semiconductor laser element according to claim 1, characterized in that: It also includes an ohmic contact layer that covers the upper surface of the ridge and extends to cover the side surface of the ridge, and the isolation layer covers the surface of the ohmic contact layer located on the side surface of the ridge.

10. The semiconductor laser element according to claim 1, characterized in that: The included angle β between the side surface of the ridge and the platform is between 40° and 90°.

11. The semiconductor laser element according to claim 1, characterized in that: The thermal conductivity of the isolation layer is greater than that of the insulation layer.

12. The semiconductor laser element according to claim 1, characterized in that: The semiconductor laser further includes a first electrode and a second electrode, the first electrode being located on the surface of the substrate away from the epitaxial structure, and the second electrode being located on the surface of the insulating layer away from the epitaxial structure; the isolation layer is located within the top view projection range of the first electrode.

13. The semiconductor laser element according to claim 1, characterized in that: The epitaxial structure includes at least a first cladding layer, a first waveguide layer, an active layer, a second waveguide layer, and a second cladding layer stacked sequentially on the substrate; the ridge extends from the epitaxial structure on the surface away from the substrate to the surface closer to the substrate until the second cladding layer or the second waveguide layer is exposed.

14. The semiconductor laser element according to claim 13, characterized in that: The epitaxial structure further includes an electron blocking layer located in the second waveguide layer.

15. The semiconductor laser element according to claim 13, characterized in that: The first cladding layer comprises an N-type doped gallium-containing nitride, the first waveguide layer comprises an N-type doped gallium-containing nitride, the second confinement layer comprises a P-type doped gallium-containing nitride, and the second waveguide layer comprises a P-type doped gallium-containing nitride.

16. A light emitting device, characterized in that: The semiconductor laser element described in any one of claims 1-15 is used.

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