Magnetic sensor and manufacturing method thereof

Abstract

A magnetic sensor is provided with: a support member including a first inclined surface and a second inclined surface that are inclined with respect to a reference plane and face different directions; a first MR element disposed on the first inclined surface; a second MR element disposed on the second inclined surface; and a first electrode connecting the first MR element and the second MR element, and including a portion overlapping a center of gravity of the first MR element and a center of gravity of the second MR element when viewed from a direction perpendicular to the reference plane.

Description

Technical Field

[0001] The present invention relates to a magnetic sensor comprising a magnetoresistive element disposed on an inclined surface and a method thereof. Background Technology

[0002] In recent years, magnetic sensors have been used in various applications. Among known magnetic sensors are those employing a spin-valve type magnetoresistive element disposed on a substrate. The spin-valve type magnetoresistive element comprises a magnetization fixed layer whose magnetization direction is fixed, a free layer whose magnetization direction can change according to the direction of the applied magnetic field, and a gap layer disposed between the magnetization fixed layer and the free layer. Spin-valve type magnetoresistive elements disposed on a substrate are mostly configured to be sensitive to magnetic fields in a direction parallel to one side of the substrate. Therefore, such magnetoresistive elements are suitable for detecting magnetic fields whose direction varies in a plane parallel to one side of the substrate.

[0003] On the other hand, in systems incorporating magnetic sensors, it is sometimes necessary to detect magnetic fields containing a component perpendicular to one side of the substrate using a magnetoresistive element disposed on a substrate. In this case, by arranging the magnetoresistive element on an inclined surface formed on the substrate, it is possible to detect the magnetic field containing a component perpendicular to one side of the substrate. For example, Japanese Patent Application Laid-Open No. 2006-261401 discloses a magnetic sensor on an inclined surface of multiple protrusions on a substrate, in which a Z-axis sensor is disposed. The magnetic sensing portion of the giant magnetoresistive element constituting the Z-axis sensor is disposed along the long side of the inclined surface.

[0004] To suppress the effects of noise, increasing the number of magnetoresistive elements is effective. As with the magnetic sensor disclosed in Patent Document 1, in a magnetic sensor where magnetoresistive elements are arranged on an inclined surface, the sensitivity of the magnetic sensor can be improved by arranging multiple magnetoresistive elements on one inclined surface. Here, it is considered to connect multiple magnetoresistive elements arranged on one inclined surface in series using wiring. In this case, the width of the wiring is smaller than the width of the inclined surface.

[0005] However, the miniaturization of devices equipped with magnetic sensors also necessitates the miniaturization of the magnetic sensors themselves. When miniaturizing magnetic sensors, the width of the wiring connecting multiple magnetoresistive elements decreases. As a result, the ratio of the wiring's resistance to the resistance of the magnetoresistive elements increases, leading to a decrease in the sensitivity of the magnetic sensor. This problem becomes particularly pronounced when multiple magnetoresistive elements connected in series are arranged on an inclined plane. Summary of the Invention

[0006] The purpose of this invention is to provide a magnetic sensor that can reduce the resistance value of the wiring connecting the magnetoresistive element.

[0007] The present invention provides a magnetic sensor comprising: a support member including a first inclined surface and a second inclined surface that are respectively inclined relative to a reference plane and oriented in different directions; a first magnetoresistive element disposed on the first inclined surface; a second magnetoresistive element disposed on the second inclined surface; and a first electrode connecting the first magnetoresistive element and the second magnetoresistive element, and including a portion that overlaps with the center of gravity of the first magnetoresistive element and the center of gravity of the second magnetoresistive element when viewed from a first direction perpendicular to the reference plane.

[0008] This invention provides a method for manufacturing a magnetic sensor, including steps of forming a first magnetoresistive element and a second magnetoresistive element. The first and second magnetoresistive elements each comprise a magnetization-fixed layer whose magnetization direction is fixed, and a free layer whose magnetization direction can change according to an applied magnetic field. The steps of forming the first and second magnetoresistive elements include: a step of forming a laminated film comprising an initial magnetization-fixed layer that subsequently becomes the magnetization-fixed layer and a free layer; and a fixing step of fixing the magnetization direction of the initial magnetization-fixed layer using a laser and an external magnetic field. The fixing step includes a first step of fixing the magnetization direction of the initial magnetization-fixed layer in the portion of the laminated film that subsequently becomes the first magnetoresistive element, and a second step of fixing the magnetization direction of the initial magnetization-fixed layer in the portion of the laminated film that subsequently becomes the second magnetoresistive element after the first step.

[0009] In the magnetic sensor of the present invention, the first electrode includes a portion that overlaps with the centroid of a first magnetoresistive element disposed on a first inclined surface and the centroid of a second magnetoresistive element disposed on a second inclined surface. Therefore, according to the present invention, the resistance value of the wiring connecting the magnetoresistive elements can be reduced.

[0010] Other objects, features and advantages of the present invention will become fully apparent from the following description. Attached Figure Description

[0011] Figure 1 This is a top view showing the magnetic sensor according to the first embodiment of the present invention.

[0012] Figure 2 This is a circuit diagram showing the circuit structure of the magnetic sensor according to the first embodiment of the present invention.

[0013] Figure 3 This is a top view showing a portion of the magnetic sensor according to the first embodiment of the present invention.

[0014] Figure 4 This is a cross-sectional view showing a portion of the magnetic sensor according to the first embodiment of the present invention.

[0015] Figure 5This is an explanatory diagram schematically showing the resistor section in the first embodiment of the present invention.

[0016] Figure 6 This is a top view showing a plurality of magnetoresistive effect elements, a plurality of lower electrodes, and a plurality of upper electrodes in the first embodiment of the present invention.

[0017] Figure 7 This is a perspective view showing the magnetoresistive effect element in the first embodiment of the present invention.

[0018] Figure 8 This is a perspective view of the magnetic sensor system according to the first embodiment of the present invention.

[0019] Figure 9 This is a cross-sectional view showing a portion of the magnetic sensor according to the second embodiment of the present invention.

[0020] Figure 10 This is a top view showing a plurality of magnetoresistive effect elements, a plurality of lower electrodes, and a plurality of upper electrodes in the second embodiment of the present invention. Detailed Implementation

[0021] [First Implementation Method]

[0022] Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. First, referring to... Figure 1 and Figure 2 The general structure of the magnetic sensor according to the first embodiment of the present invention will be described. Figure 1 This is a top view showing the magnetic sensor 1 of this embodiment. Figure 2 This is a circuit diagram showing the circuit structure of the magnetic sensor 1 in this embodiment.

[0023] The magnetic sensor 1 of this embodiment includes four resistive sections R1, R2, R3, R4, a power supply terminal V, a ground terminal G, a first output terminal E1, and a second output terminal E2. Each of the resistive sections R1 to R4 includes multiple magnetoresistive elements (hereinafter referred to as MR elements). The resistive sections R1 to R4, the power supply terminal V, the ground terminal G, and the first and second output terminals E1 and E2 are disposed on a substrate.

[0024] like Figure 2 As shown, resistor R1 is disposed between the power supply terminal V and the first output terminal E1 in the circuit structure. Resistor R2 is disposed between the ground terminal G and the first output terminal E1 in the circuit structure. Resistor R3 is disposed between the ground terminal G and the second output terminal E2 in the circuit structure. Resistor R4 is disposed between the power supply terminal V and the second output terminal E2 in the circuit structure. Furthermore, in this application, the expression "in the circuit structure" refers to the arrangement in the circuit diagram, not the physical structure.

[0025] A specific voltage or current is applied to the power supply terminal V. The ground terminal G is grounded.

[0026] Here, as Figure 1 As shown, the X, Y, and Z directions are defined. The X, Y, and Z directions are orthogonal to each other. Furthermore, the direction opposite to the X direction is defined as the -X direction, the direction opposite to the Y direction as the -Y direction, and the direction opposite to the Z direction as the -Z direction. In this embodiment, in particular, the direction perpendicular to one side of the substrate on which the resistors R1-R4, the power supply terminal V, the ground terminal G, and the first and second output terminals E1 and E2 are disposed is defined as the Z direction.

[0027] Furthermore, hereinafter, the position at the front end of the Z-direction relative to the reference point will be referred to as "above," and the position at the opposite side of the reference point relative to "above" will be referred to as "below." Regarding the components of the magnetic sensor 1, the side located at the Z-direction end will be referred to as the "upper surface," and the side located at the -Z-direction end will be referred to as the "lower surface." Additionally, the expression "when viewed from a specific direction (e.g., the Z-direction)" refers to viewing the object from a position in the specific direction or a direction parallel to the specific direction.

[0028] Figure 1 This example illustrates the arrangement of resistors R1 to R4. In this example, resistors R1 and R2 are arranged in a direction parallel to the X direction. Resistor R2 is positioned at the front end of resistor R1 in the X direction.

[0029] Resistors R3 and R4 are arranged parallel to the X-direction. Resistor R4 is positioned at the leading edge in the -X-direction relative to resistor R3. Resistor R3 is positioned at the leading edge in the -Y-direction relative to resistor R2. Resistor R4 is positioned at the leading edge in the -Y-direction relative to resistor R1.

[0030] Furthermore, the arrangement of resistors R1 to R4 is not limited to... Figure 1 The example shown. For instance, resistors R1 to R4 are arranged in a specific order in a direction parallel to the X direction or in a direction parallel to the Y direction.

[0031] Next, refer to Figure 3 and Figure 4 The specific structure of magnetic sensor 1 will be described in detail. Figure 3 This is a top view showing a portion of magnetic sensor 1. Figure 4 express Figure 3 A portion of the cross section at the location indicated by line 4-4.

[0032] The magnetic sensor 1 also includes wiring 40. Resistor R1 is electrically connected to power terminal V and first output terminal E1 via wiring 40. Resistor R2 is electrically connected to ground terminal G and first output terminal E1 via wiring 40. Resistor R3 is electrically connected to ground terminal G and second output terminal E2 via wiring 40. Resistor R4 is electrically connected to power terminal V and second output terminal E2 via wiring 40.

[0033] The resistive sections R1 to R4 each include a plurality of first MR elements 20A, a plurality of second MR elements 20B, and a plurality of lower electrodes 41 and a plurality of upper electrodes 42 that connect the plurality of first MR elements 20A and the plurality of second MR elements 20B, respectively. The resistive sections R1 to R4 are constituent elements of the magnetic sensor 1; therefore, it can also be said that the magnetic sensor 1 includes a plurality of first MR elements 20A, a plurality of second MR elements 20B, a plurality of lower electrodes 41, and a plurality of upper electrodes 42. The lower electrodes 41 and upper electrodes 42 form part of the wiring 40. Hereinafter, any MR element will be indicated by reference numeral 20.

[0034] In each of the resistor sections R1 to R4, a plurality of first MR elements 20A and a plurality of second MR elements 20B are electrically connected by a plurality of lower electrodes 41 and a plurality of upper electrodes 42. The connection method between the plurality of first MR elements 20A and the plurality of second MR elements 20B will be described in detail below.

[0035] Here, as Figure 4 As shown, the U direction and V direction are defined as follows. The U direction is the direction of rotation from the X direction toward the Z direction. The V direction is the direction of rotation from the X direction toward the -Z direction. In this embodiment, the U direction is specifically defined as the direction after rotating α from the X direction toward the Z direction, and the V direction is defined as the direction after rotating α from the X direction toward the -Z direction. Furthermore, α is an angle greater than 0° and less than 90°. In addition, the direction opposite to the U direction is defined as the -U direction, and the direction opposite to the V direction is defined as the -V direction. The U direction and V direction are both orthogonal to the Y direction.

[0036] like Figure 4 As shown, the magnetic sensor 1 includes a substrate 31 having an upper surface 31a, and insulating layers 32, 33, 34, 35, 36, and 37. The upper surface 31a of the substrate 31 is parallel to the XY plane. Furthermore, the upper surface 31a of the substrate 31 corresponds to the "reference plane" in this invention. The Z direction is also a direction perpendicular to the upper surface 31a of the substrate 31.

[0037] Insulating layers 32 and 33 are sequentially stacked on substrate 31. A plurality of lower electrodes 41 are disposed on insulating layer 33. An insulating layer 34 is disposed on insulating layer 33 around the plurality of lower electrodes 41. A plurality of first MR elements 20A and a plurality of second MR elements 20B are disposed on the plurality of lower electrodes 41. An insulating layer 35 is disposed on the plurality of lower electrodes 41 and insulating layer 34 around the plurality of first MR elements 20A and the plurality of second MR elements 20B. A plurality of upper electrodes 42 are disposed on the plurality of first MR elements 20A, the plurality of second MR elements 20B, and insulating layer 35. An insulating layer 36 is disposed on insulating layer 35 around the plurality of upper electrodes 42. An insulating layer 37 is disposed on the plurality of upper electrodes 42 and insulating layer 36.

[0038] The magnetic sensor 1 includes a support member that supports a plurality of first MR elements 20A and a plurality of second MR elements 20B. The support member has at least one inclined surface that is inclined relative to the upper surface 31a of the substrate 31. In this embodiment, the support member is specifically formed of an insulating layer 33. Furthermore, in… Figure 3 The diagram shows the components of the magnetic sensor 1, including an insulating layer 33, a plurality of first MR elements 20A, and a plurality of second MR elements 20B.

[0039] The insulating layer 33 has a plurality of convex surfaces 33c extending in a direction (Z direction) away from the upper surface 31a of the substrate 31. The plurality of convex surfaces 33c extend in a direction parallel to the Y direction. The overall shape of the convex surfaces 33c is such that... Figure 4 The convex surface 33c shown is a semi-cylindrical curved surface formed by moving its curved shape (arch shape) along a direction parallel to the Y direction. Furthermore, multiple convex surfaces 33c are arranged at predetermined intervals along a direction parallel to the X direction.

[0040] Each of the plurality of convex surfaces 33c has an upper end portion furthest from the upper surface 31a of the substrate 31. In this embodiment, the upper end portion of each of the plurality of convex surfaces 33c extends in a direction parallel to the Y direction. Here, focus is placed on any one of the plurality of convex surfaces 33c. The convex surface 33c includes inclined surfaces 33a and 33b facing mutually different directions. Inclined surface 33a is the portion of the convex surface 33c that is closer to the -X direction side than the upper end portion of the convex surface 33c. Inclined surface 33b is the portion of the convex surface 33c that is closer to the X direction side than the upper end portion of the convex surface 33c. Figure 3 In the diagram, the boundary between inclined surfaces 33a and 33b is represented by dashed lines.

[0041] The upper end of the convex surface 33c can also be the boundary between the inclined surfaces 33a and 33b. In this case, Figure 3 The dashed line shown represents the upper end of the convex surface 33c.

[0042] The upper surface 31a of the substrate 31 is parallel to the XY plane. Inclined surfaces 33a and 33b are inclined relative to the upper surface 31a of the substrate 31, i.e., the XY plane. In a cross section of the substrate 31 perpendicular to the upper surface 31a, the distance between the inclined surfaces 33a and 33b decreases as the distance moves away from the upper surface 31a of the substrate 31.

[0043] In this embodiment, since there are multiple convex surfaces 33c, there are also multiple inclined surfaces 33a and 33b. The insulating layer 33 has multiple inclined surfaces 33a and multiple inclined surfaces 33b.

[0044] The insulating layer 33 may also have non-convex surfaces 33d surrounding the plurality of convex surfaces 33c. The non-convex surface 33d may be a side parallel to the upper surface 31a of the substrate 31, or it may not be a side parallel to the upper surface 31a of the substrate 31. In this embodiment, the non-convex surface 33d is a side parallel to the upper surface 31a of the substrate 31, i.e., a plane parallel to the XY plane. Each of the plurality of convex surfaces 33c protrudes from the non-convex surface 33d in the Z direction. Furthermore, in this embodiment, the plurality of convex surfaces 33c are arranged at intervals. Therefore, a non-convex surface 33d exists between two adjacent convex surfaces 33c in the X direction.

[0045] Multiple lower electrodes 41 are disposed on multiple inclined surfaces 33a and multiple inclined surfaces 33b. As described above, since inclined surfaces 33a and 33b are inclined relative to the upper surface 31a of the substrate 31, i.e., the XY plane, the upper surfaces of each of the multiple lower electrodes 41 are also inclined relative to the XY plane. Therefore, it can be said that multiple first MR elements 20A and multiple second MR elements 20B are disposed on inclined surfaces inclined relative to the XY plane. The insulating layer 33 is a component for supporting the multiple first MR elements 20A and multiple second MR elements 20B respectively as inclined relative to the XY plane.

[0046] Next, refer to Figure 5 The arrangement of the plurality of first MR elements 20A and the plurality of second MR elements 20B in each of the resistor sections R1 to R4 will be described. Figure 5This is an explanatory diagram schematically showing any of the resistor sections R1 and R3. Multiple first MR elements 20A and multiple second MR elements 20B are arranged in multiples in both directions parallel to the X direction and parallel to the Y direction. Here, the group of multiple first MR elements 20A arranged in a row along the direction parallel to the Y direction is called a first element row, and the group of multiple second MR elements 20B arranged in a row along the direction parallel to the Y direction is called a second element row. Resistor sections R1 to R4 each contain multiple first element rows and multiple second element rows. The multiple first element rows and multiple second element rows can also be configured such that the first element rows and second element rows alternate along the direction parallel to the X direction.

[0047] Alternatively, the plurality of first MR elements 20A and the plurality of second MR elements 20B can be configured such that the first MR elements 20A and the second MR elements 20B are alternately arranged in a direction parallel to the X direction. Here, the group of the plurality of first MR elements 20A and the plurality of second MR elements 20B arranged in a row in a direction parallel to the X direction is called a third element column. Resistor sections R1 to R4 each include a plurality of third element columns. Wiring 40 electrically connects the plurality of first MR elements 20A and the plurality of second MR elements 20B respectively included in the plurality of third element columns, and connects the plurality of third element columns in series. In each of the resistor sections R1 to R4, the shape of wiring 40 when viewed from the Z direction is a meandering shape.

[0048] Next, refer to Figure 4 and Figure 6 The connection method of the plurality of first MR elements 20A and the plurality of second MR elements 20B in each of the resistor sections R1 to R4 is described in detail. Figure 6 This is a top view showing multiple first MR elements 20A, multiple second MR elements 20B, multiple lower electrodes 41, and multiple upper electrodes 42.

[0049] Here, as Figure 6 As shown, the first and second MR elements 20A and 20B, disposed on the inclined surfaces 33a and 33b of one of the two adjacent convex surfaces 33c, are respectively designated by reference numerals 20A1 and 20B1, and the first and second MR elements 20A and 20B, disposed on the inclined surfaces 33a and 33b of the other of the two adjacent convex surfaces 33c, are respectively designated by reference numerals 20A2 and 20B2. A plurality of lower electrodes 41 extend along the upper surface of the insulating layer 33 in a direction parallel to the X direction, connecting groups of the first and second MR elements 20A1 and 20B1 and groups of the first and second MR elements 20A2 and 20B2.

[0050] Multiple upper electrodes 42 extend along the upper surface of the insulating layer 33 in a direction parallel to the X-direction, connecting groups of first and second MR elements 20A and 20B disposed on one of the two lower electrodes 41 and groups of first and second MR elements 20A and 20B disposed on the other of the two lower electrodes 41. Each upper electrode 42 is connected to a group of first and second MR elements 20A1 and 20B1 connected to a lower electrode 41 and to a group of first and second MR elements 20A2 and 20B2. In this way, multiple groups of first and second MR elements 20A and 20B are connected in series.

[0051] Here, the lower electrode 41 connecting the group of first and second MR elements 20A1, 20B1 and the group of first and second MR elements 20A2, 20B2 is referred to as the first lower electrode 41, the upper electrode 42 connected to the group of first and second MR elements 20A1, 20B1 is referred to as the first upper electrode 42, and the upper electrode 42 connected to the group of first and second MR elements 20A2, 20B2 is referred to as the second upper electrode 42. The group of first and second MR elements 20A1, 20B1 is disposed between the first lower electrode 41 and the first upper electrode 42, and is connected in parallel by the first lower electrode 41 and the first upper electrode 42. The group of first and second MR elements 20A2, 20B2 is disposed between the first lower electrode 41 and the second upper electrode 42, and is connected in parallel by the first lower electrode 41 and the second upper electrode 42.

[0052] The first upper electrode 42 is not directly connected to the group of first and second MR elements 20A2, 20B2 disposed on the first lower electrode 41. The second upper electrode 42 is not directly connected to the group of first and second MR elements 20A1, 20B1 disposed on the first lower electrode 41. The first upper electrode 42 and the second upper electrode 42 each include a portion located on the convex surface 33c and a portion located on the non-convex surface 33d. One end of the first upper electrode 42 in the direction parallel to the X direction and one end of the second upper electrode 42 in the direction parallel to the X direction are located on the non-convex surface 33d, which is located between the two convex surfaces 33c. In addition, the aforementioned ends of the first upper electrode 42 and the aforementioned ends of the second upper electrode 42 are disposed at a distance from each other on the non-convex surface 33d.

[0053] The first lower electrode 41 includes a portion located above the convex surface 33c and a portion located above the non-convex surface 33d. Both ends of the first lower electrode 41 in the direction parallel to the X direction are located above the non-convex surface 33d. In addition, one end of the first lower electrode 41 in the direction parallel to the X direction is located above the non-convex surface 33d and is arranged at a distance from the end of the other lower electrode 41 in the direction parallel to the X direction.

[0054] exist Figure 6 In the attached drawing, reference numeral C1 indicates the center of gravity of the first MR element 20A when viewed from the Z direction, and reference numeral C2 indicates the center of gravity of the second MR element 20B when viewed from the Z direction. The lower electrode 41 and the upper electrode 42 respectively include portions that overlap with the center of gravity C1 of the first MR element 20A and the center of gravity C2 of the second MR element 20B when viewed from the Z direction. Figure 6 In the example shown, especially when viewed from the Z direction, the lower electrode 41 and the upper electrode 42 can also overlap with the entire first MR element 20A and the entire second MR element 20B, respectively.

[0055] As described above, the multiple convex surfaces 33c extend in directions parallel to the Y direction. Therefore, the inclined surfaces 33a and 33b also extend in directions parallel to the Y direction. Furthermore, when viewed from the Z direction, the lower electrode 41 and the upper electrode 42 extend in directions parallel to the X direction. The size of the lower electrode 41 in the direction parallel to the Y direction can also be larger than the sizes of the inclined surfaces 33a and 33b in the direction parallel to the X direction. Similarly, the size of the upper electrode 42 in the direction parallel to the Y direction can also be larger than the sizes of the inclined surfaces 33a and 33b in the direction parallel to the X direction.

[0056] The dimensions of the lower electrode 41 in the direction parallel to the Y direction can be constant or variable. Similarly, the dimensions of the upper electrode 42 in the direction parallel to the Y direction can be constant or variable.

[0057] Next, refer to Figure 7 The structure of MR element 20 will be described. Figure 7 This is a perspective view of the MR element 20. The MR element 20 is a spin valve type MR element. The MR element 20 may also have a magnetized fixed layer 22 with a fixed magnetization direction, a free layer 24 whose magnetization direction can change according to the direction of the applied magnetic field, and a gap layer 23 disposed between the magnetized fixed layer 22 and the free layer 24. The MR element 20 can be a TMR (tunneling magnetoresistance) element or a GMR (giant magnetoresistance) element. In a TMR element, the gap layer 23 is a tunnel barrier layer. In a GMR element, the gap layer 23 is a non-magnetic conductive layer. In the MR element 20, the resistance value varies according to the angle formed by the magnetization direction of the free layer 24 and the magnetization direction of the magnetized fixed layer 22. The resistance value is at its minimum when the angle is 0° and at its maximum when the angle is 180°.

[0058] The MR element 20 can also have a shape that is longer in one direction. Figure 7In the example shown, the MR element 20 has a shape that is longer in a direction parallel to the Y direction. Therefore, the free layer 24 of the MR element 20 has a shape anisotropy where the easy magnetization axis is parallel to the Y direction.

[0059] The MR element 20 also has an antiferromagnetic layer 21. The antiferromagnetic layer 21, the magnetization fixation layer 22, the gap layer 23, and the free layer 24 are sequentially stacked. The antiferromagnetic layer 21 is made of an antiferromagnetic material and generates exchange coupling with the magnetization fixation layer 22, fixing the magnetization direction of the magnetization fixation layer 22. Furthermore, the magnetization fixation layer 22 can also be a so-called self-pinned fixation layer (SFP layer). A self-pinned fixation layer has a stacked ferrite structure consisting of a stacked ferromagnetic layer, a non-magnetic intermediate layer, and a ferromagnetic layer, where two ferromagnetic layers are antiferromagnetically coupled. When the magnetization fixation layer 22 is a self-pinned fixation layer, the antiferromagnetic layer 21 can be omitted.

[0060] Furthermore, the vertical arrangement of the layers 21-24 of each MR element 20 can also be aligned with... Figure 7 The configuration shown is reversed top to bottom.

[0061] Next, refer to Figure 2 and Figure 4 The magnetization directions of the magnetization fixing layer 22 are explained. The principal component of the magnetization of the magnetization fixing layer 22 of the first MR element 20A of each of the resistors R1 and R3 is in the U direction. The principal component of the magnetization of the magnetization fixing layer 22 of the second MR element 20B of each of the resistors R1 and R3 is in the -V direction. The principal component of the magnetization of the magnetization fixing layer 22 of the first MR element 20A of each of the resistors R2 and R4 is in the -U direction. The principal component of the magnetization of the magnetization of the second MR element 20B of each of the resistors R2 and R4 is in the V direction.

[0062] Furthermore, the magnetization direction of the magnetization fixing layer 22 can be consistent with the direction of the principal component of magnetization, or it can deviate slightly from the direction of the principal component of magnetization. In the following description, the magnetization direction of the magnetization fixing layer 22 refers to the direction of the principal component of magnetization of the magnetization fixing layer 22.

[0063] In this embodiment, inclined surfaces 33a and 33b are curved surfaces. Therefore, the first and second MR elements 20A and 20B are curved along the curved surfaces (inclined surfaces 33a and 33b), respectively. In this embodiment, for convenience, the magnetization directions of the magnetization fixing layers 22 of the first and second MR elements 20A and 20B are defined as linear directions as described above. The magnetization directions of the magnetization fixing layers 22 of the first MR element 20A, namely the U direction and the -U direction, are also the directions of the wiring extension in the inclined surface 33a that are in contact with the portion near the first MR element 20A. The magnetization directions of the magnetization fixing layers 22 of the second MR element 20B, namely the V direction and the -V direction, are also the directions of the wiring extension in the inclined surface 33b that are in contact with the portion near the second MR element 20B.

[0064] Here, the direction in which the magnetization direction of the magnetization fixing layer 22 of the first MR element 20A is projected perpendicularly onto the upper surface 31a of the substrate 31, i.e., the reference plane (XY plane), is called the first magnetization direction, and the direction in which the magnetization direction of the magnetization fixing layer 22 of the second MR element 20B is projected perpendicularly onto the upper surface 31a of the substrate 31, i.e., the reference plane (XY plane), is called the second magnetization direction. Figure 2 In the diagram, the arrow drawn in a manner that overlaps with the first MR element 20A indicates the first magnetization direction, and the arrow drawn in a manner that overlaps with the second MR element 20B indicates the second magnetization direction.

[0065] In this embodiment, the first magnetization direction and the second magnetization direction can also be opposite to each other. Figure 2 In the example shown, the first magnetization direction of resistors R1 and R3 is the X direction. The second magnetization direction of resistors R1 and R3 is the -X direction. The first magnetization direction of resistors R2 and R4 is the -X direction. The second magnetization direction of resistors R2 and R4 is the X direction.

[0066] Furthermore, the direction in which the magnetization direction of the magnetization fixing layer 22 of the first MR element 20A is projected perpendicularly onto the YZ plane is called the third magnetization direction, and the direction in which the magnetization direction of the magnetization fixing layer 22 of the second MR element 20B is projected perpendicularly onto the YZ plane is called the fourth magnetization direction. The third and fourth magnetization directions of resistors R1 and R3 are both in the Z direction. The third and fourth magnetization directions of resistors R2 and R4 are both in the -Z direction.

[0067] Next, refer to Figure 8 The structure of the magnetic sensor system 100, which includes the magnetic sensor 1, will be described. Figure 8This is a perspective view of a magnetic sensor system 100. The magnetic sensor system 100 includes a magnetic sensor 1 and a magnetic field generating unit 2 that generates a magnetic field. In this embodiment, the magnetic field generating unit 2 is a magnet, configured to apply a portion of the magnetic field generated by the magnetic sensor 1, i.e., a partial magnetic field. This partial magnetic field includes a first magnetic field component Hz parallel to the Z direction and a second magnetic field component Hy parallel to the Y direction.

[0068] The magnetization direction of the magnetic field generating unit 2 is the Y direction, and the direction of the second magnetic field component Hy is the -Y direction. When the magnetic field generating unit 2 moves from a specific position in the Y direction, the direction of the first magnetic field component Hz becomes the Z direction, and when the magnetic field generating unit 2 moves from a specific position in the -Y direction, the direction of the first magnetic field component Hz becomes the -Z direction.

[0069] Next, refer to Figure 2 , Figure 4 and Figure 8 The function of the magnetic sensor 1 will be explained. The first magnetic field component Hz that the multiple first MR elements 20A receive can be divided into components parallel to the U direction and components orthogonal to the U direction. The first magnetic field component Hz that the multiple second MR elements 20B receive can be divided into components parallel to the V direction and components orthogonal to the V direction.

[0070] In the state where the first magnetic field component Hz is absent, the magnetization direction of the free layer 24 of each of the plurality of first MR elements 20A and the plurality of second MR elements 20B becomes a direction parallel to the Y direction. When the direction of the first magnetic field component Hz is the Z direction, a magnetic field component in the U direction of the first magnetic field component Hz is actually applied to each of the plurality of first MR elements 20A, and a magnetic field component in the -V direction of the first magnetic field component Hz is actually applied to each of the plurality of second MR elements 20B. In this case, the magnetization direction of the free layer 24 of each of the plurality of first MR elements 20A tilts from a direction parallel to the Y direction toward the U direction, and the magnetization direction of the free layer 24 of each of the plurality of second MR elements 20B tilts from a direction parallel to the Y direction toward the -V direction. As a result, compared with the state where the first magnetic field component Hz is absent, the resistance values ​​of each of the plurality of first MR elements 20A and the plurality of second MR elements 20B constituting resistive sections R1 and R3 decrease, and the resistance values ​​of each of the plurality of first MR elements 20A and the plurality of second MR elements 20B constituting resistive sections R2 and R4 increase. As a result, the resistance values ​​of resistors R1 and R3 decrease, while the resistance values ​​of resistors R2 and R4 increase.

[0071] When the direction of the first magnetic field component Hz is in the -Z direction, the direction of the magnetic field component applied to the plurality of first MR elements 20A, the direction of the magnetic field component applied to the plurality of second MR elements 20B, and the change in the resistance value of each of the resistors R1 to R4 are opposite to the case where the direction of the first magnetic field component Hz is in the Z direction.

[0072] The change in resistance value of each of the resistors R1 to R4 depends on the strength of the magnetic field components experienced by the plurality of first MR elements 20A and the plurality of second MR elements 20B. When the strength of the magnetic field component increases, the resistance value of each of the resistors R1 to R4 changes in the direction of either increasing or decreasing by a larger amount. When the strength of the magnetic field component decreases, the resistance value of each of the resistors R1 to R4 changes in the direction of either increasing or decreasing by a smaller amount. The strength of the magnetic field component depends on the strength of the first magnetic field component Hz.

[0073] Thus, when the direction and intensity of the first magnetic field component Hz change, the resistance values ​​of resistors R1 to R4 change such that the resistance values ​​of resistors R2 and R4 decrease as the resistance values ​​of resistors R1 and R3 increase, or the resistance values ​​of resistors R2 and R4 increase as the resistance values ​​of resistors R1 and R3 decrease. Consequently, the potential at the connection point of resistors R1 and R2 (i.e., the potential of the first output terminal E1) and the potential at the connection point of resistors R3 and R4 (i.e., the potential of the second output terminal E2) change. The magnetic sensor 1 can also generate a signal corresponding to the potential of the first output terminal E1 and a signal corresponding to the potential of the second output terminal E2 as detection signals. Alternatively, the magnetic sensor 1 can also generate a signal corresponding to the potential difference between the first output terminal E1 and the second output terminal E2 as a detection signal. In this case, the magnetic sensor 1 can also include a differential amplifier (differential detector) that outputs a signal corresponding to the potential difference between the first output terminal E1 and the second output terminal E2 as a detection signal.

[0074] The magnetic sensor system 100 may also include a processor (not shown). The processor (not shown) may be configured to receive one or two detection signals output from the magnetic sensor 1 and generate a detection value corresponding to the intensity of the first magnetic field component Hz or a detection value corresponding to the position of the magnetic field generating unit 2.

[0075] Next, a brief description of the manufacturing method of the magnetic sensor 1 according to this embodiment will be given. The manufacturing method of the magnetic sensor 1 includes a process of forming a plurality of first MR elements 20A and a plurality of second MR elements 20B, a process of forming a plurality of lower electrodes 41, a process of forming a plurality of upper electrodes 42, and a process of forming insulating layers 32 to 37.

[0076] The process of forming a plurality of first MR elements 20A and a plurality of second MR elements 20B includes the process of forming a plurality of laminated films that subsequently become a plurality of first MR elements 20A and a plurality of second MR elements 20B. Each of the plurality of laminated films includes at least an initial magnetization layer that subsequently becomes a magnetization fixation layer 22, a free layer 24, and a gap layer 23.

[0077] The process of forming multiple first MR elements 20A and multiple second MR elements 20B also includes a fixing step of fixing the magnetization direction of the laminated films using a laser and an external magnetic field of a specific direction. The fixing step includes a first step and a second step that follows the first step.

[0078] In the first step, while applying an external magnetic field in the X or -X direction to portions of the multiple laminated films that will later become multiple first MR elements 20A, the multiple laminated films are irradiated with a laser. When the laser irradiation is complete, the magnetization direction of the initial magnetization fixing layer is fixed to the U or -U direction. Thus, the initial magnetization fixing layer becomes the magnetization fixing layer 22, and the multiple laminated films become multiple first MR elements 20A.

[0079] In the first step, after the magnetization of the magnetization fixing layer 22 that fixes the plurality of first MR elements 20A, a second step is performed to magnetize the magnetization fixing layer 22 that fixes the plurality of second MR elements 20B. In the second step, while applying an external magnetic field in the X direction or -X direction to the portion of the plurality of laminated films that will subsequently become the plurality of second MR elements 20B, the plurality of laminated films are irradiated with a laser. When the laser irradiation is completed, the magnetization direction of the initial magnetization fixing layer is fixed to the V direction or -V direction. Thus, the initial magnetization fixing layer becomes the magnetization fixing layer 22, and the plurality of laminated films become the plurality of second MR elements 20B.

[0080] Alternatively, the magnetization of the magnetization fixing layer 22 of multiple second MR elements 20B can be fixed in the first process, and the magnetization of the magnetization fixing layer 22 of multiple first MR elements 20A can be fixed in the second process. Alternatively, at least one laminated film can be formed instead of multiple laminated films. In this case, the first and second processes are performed using at least one laminated film. The at least one laminated film is patterned by etching such that, after performing the first and second processes, the at least one laminated film becomes multiple first MR elements 20A and multiple second MR elements 20B.

[0081] The process of forming multiple lower electrodes 41 includes a process of forming a metal film and a process of patterning the metal film by etching so that the metal film becomes multiple lower electrodes 41. The process of forming multiple upper electrodes 42 includes a process of forming a metal film and a process of patterning the metal film by etching so that the metal film becomes multiple upper electrodes 42.

[0082] Next, the effect of the magnetic sensor 1 in this embodiment will be explained. In this embodiment, the lower electrode 41 and the upper electrode 42 respectively include portions that overlap with the centroid C1 of the first MR element 20A disposed on the inclined surface 33a and the centroid C2 of the second MR element 20B disposed on the inclined surface 33b. Here, we consider the case where multiple lower electrodes and multiple upper electrodes are connected in series with multiple first MR elements 20A disposed on the inclined surface 33a. In this case, the dimensions of the multiple lower electrodes and multiple upper electrodes in the short side direction (the direction parallel to the X direction) are limited by the dimensions of the inclined surface 33a in the short side direction (the direction parallel to the X direction). Therefore, in this case, the dimensions of the multiple lower electrodes and multiple upper electrodes in the short side direction cannot be sufficiently increased, and as a result, the resistance value of the wiring 40 cannot be sufficiently reduced.

[0083] In contrast, according to this embodiment, the dimensions of the short side direction (parallel to the X direction) of each of the inclined surfaces 33a and 33b are not restricted, and the dimensions of the short side direction (parallel to the Y direction) of the plurality of lower electrodes 41 and the plurality of upper electrodes 42 can be specified. Therefore, according to this embodiment, the resistance value of the wiring 40 can be reduced. As a result, according to this embodiment, the sensitivity of the magnetic sensor 1 can be improved.

[0084] Furthermore, in this embodiment, each of the plurality of MR elements 20 has a shape that is longer in the direction parallel to the Y direction, and when viewed from the Z direction, the plurality of lower electrodes 41 and the plurality of upper electrodes 42 overlap with the entire MR element 20. Thus, according to this embodiment, the dimensions of the plurality of lower electrodes 41 and the plurality of upper electrodes 42 in the short side direction (the direction parallel to the Y direction) can be sufficiently increased.

[0085] Furthermore, according to this embodiment, the dimensions of the short sides (directions parallel to the X direction) of the inclined surfaces 33a and 33b can be reduced without reducing the dimensions of the short sides (directions parallel to the Y direction) of the plurality of lower electrodes 41 and the plurality of upper electrodes 42. When comparing the areas of the upper surface 31a of the substrate 31 to be the same, according to this embodiment, the number of MR elements 20 per unit area can be increased, resulting in improved sensitivity of the magnetic sensor 1 and improved noise immunity. Additionally, when comparing the number of MR elements 20 to be the same, according to this embodiment, the magnetic sensor 1 can be miniaturized.

[0086] Furthermore, in this embodiment, one end of one of the two lower electrodes 41 and one end of the other of the two lower electrodes 41 are arranged spaced apart on the non-convex surface 33d. Therefore, according to this embodiment, compared to the case where one end of one of the two lower electrodes 41 and one end of the other of the two lower electrodes 41 are on the convex surface 33c, the subsequent etching of the metal film that forms a plurality of lower electrodes 41 becomes easier.

[0087] The above description of the lower electrode 41 also applies to the upper electrode 42.

[0088] [Second Implementation]

[0089] Next, refer to Figure 9 and Figure 10 The second embodiment of the present invention will be described. Figure 9 This is a cross-sectional view showing a portion of the magnetic sensor in this embodiment. Figure 10 This is a top view showing a portion of the magnetic sensor in this embodiment.

[0090] The following describes the differences in structure between the magnetic sensor 1 of this embodiment and the first embodiment. The magnetic sensor 1 of this embodiment includes a plurality of lower electrodes 43 and a plurality of upper electrodes 44, replacing the plurality of lower electrodes 41 and a plurality of upper electrodes 42 in the first embodiment. In the resistive portions R1 to R4 (refer to…) Figure 2 Each of the plurality of first MR elements 20A and the plurality of second MR elements 20B is electrically connected by a plurality of lower electrodes 43 and a plurality of upper electrodes 44.

[0091] Multiple lower electrodes 43 are disposed on multiple inclined surfaces 33a and multiple inclined surfaces 33b of insulating layer 33. Insulating layer 34 is disposed on insulating layer 33 around the multiple lower electrodes 43. Multiple first MR elements 20A and multiple second MR elements 20B are disposed on the multiple lower electrodes 43. Insulating layer 35 is disposed on the multiple lower electrodes 43 and insulating layer 34 around the multiple first MR elements 20A and around the multiple second MR elements 20B. Multiple upper electrodes 44 are disposed on the multiple first MR elements 20A, the multiple second MR elements 20B, and insulating layer 35. Insulating layer 36 is disposed on insulating layer 35 around the multiple upper electrodes 44. Insulating layer 37 is disposed on the multiple upper electrodes 44 and insulating layer 36.

[0092] like Figure 10As shown, reference numerals 20A1 and 20B1 denote the first and second MR elements 20A and 20B disposed on the inclined surfaces 33a and 33b of one of the two adjacent convex surfaces 33c, respectively, and reference numerals 20A2 and 20B2 denote the first and second MR elements 20A and 20B disposed on the inclined surfaces 33a and 33b of the other of the two adjacent convex surfaces 33c, respectively. A plurality of lower electrodes 43 extend along the upper surface of the insulating layer 33 in a direction parallel to the X direction, and connect the second MR element 20B1 and the first MR element 20A2. A plurality of upper electrodes 44 extend along the upper surface of the insulating layer 33 in a direction parallel to the X direction, and connect groups of the first MR elements 20A1 and the second MR elements 20B1, or groups of the first MR elements 20A2 and the second MR elements 20B2. Thus, a plurality of first MR elements 20A and a plurality of second MR elements 20B are connected in series.

[0093] Here, the lower electrode 43 connecting the second MR element 20B1 and the first MR element 20A2 is referred to as the first lower electrode 43, the upper electrode 44 connecting the second MR element 20B1 and the first MR element 20A1 is referred to as the first upper electrode 44, and the upper electrode 44 connecting the first MR element 20A2 and the second MR element 20B2 is referred to as the second upper electrode 44.

[0094] The second MR element 20B1 is disposed between the first lower electrode 43 and the first upper electrode 44.

[0095] The first MR element 20A2 is disposed between the first lower electrode 43 and the second upper electrode 44.

[0096] The first MR element 20A1 is disposed between another lower electrode 43 and the first upper electrode 44.

[0097] The second MR element 20B2 is disposed between the lower electrode 43 and the upper electrode 44.

[0098] The first upper electrode 44 is not directly connected to the first MR element 20A2 disposed above the first lower electrode 43. The second upper electrode 44 is not directly connected to the second MR element 20B1 disposed above the first lower electrode 43. The first upper electrode 44 and the second upper electrode 44 each include a portion located above the convex surface 33c and a portion located above the non-convex surface 33d. One end of the first upper electrode 44 in the direction parallel to the X direction and one end of the second upper electrode 44 in the direction parallel to the X direction are located above the non-convex surface 33d, which is located between the two convex surfaces 33c. In addition, the aforementioned ends of the first upper electrode 44 and the aforementioned ends of the second upper electrode 44 are disposed spaced apart on the non-convex surface 33d.

[0099] The first lower electrode 43 includes a portion located above the convex surface 33c and a portion located above the non-convex surface 33d. Both ends of the first lower electrode 43 in the direction parallel to the X direction are located above the convex surface 33c. In addition, one end of the first lower electrode 43 in the direction parallel to the X direction is located above the convex surface 33c and near the boundary between the inclined surfaces 33a and 33b (the upper end of the convex surface 33c), and is spaced apart from one end of the other lower electrode 43 in the direction parallel to the X direction.

[0100] The lower electrode 43 and the upper electrode 44 respectively include portions that overlap with the centroid C1 of the first MR element 20A and the centroid C2 of the second MR element 20B when viewed from the Z direction. Figure 10 In the example shown, especially when viewed from the Z direction, the lower electrode 43 and the upper electrode 44 overlap with the entirety of the first MR element 20A and the entirety of the second MR element 20B, respectively.

[0101] When viewed from the Z direction, the lower electrode 43 and the upper electrode 44 extend in directions parallel to the X direction. The size of the lower electrode 43 in the direction parallel to the Y direction is larger than the size of the inclined surface 33a and the inclined surface 33b in the direction parallel to the X direction. Similarly, the size of the upper electrode 44 in the direction parallel to the Y direction is larger than the size of the inclined surface 33a and the inclined surface 33b in the direction parallel to the X direction.

[0102] The dimensions of the lower electrode 43, which is parallel to the Y direction, can be constant or variable. Similarly, the dimensions of the upper electrode 44, which is parallel to the Y direction, can be constant or variable.

[0103] The other structures, functions, and effects of this embodiment are the same as those of the first embodiment.

[0104] Furthermore, the present invention is not limited to the embodiments described above and various modifications are possible. For example, as long as the requirements of the claims are met, the shape, arrangement, and number of the MR element 20, the lower electrodes 41 and 43, and the upper electrodes 42 and 44 are not limited to the examples shown in the embodiments and are arbitrary. The planar shape (shape viewed from the Z direction) of the MR element 20 is not limited to a rectangle that is longer in one direction, but can also be an ellipse, an oblong, or a polygon that is longer in one direction. Alternatively, the planar shape of the MR element 20 can also be a circle or a square.

[0105] Alternatively, the insulating layer 33 may have multiple grooves recessed from the flat surface toward the -Z direction. In this case, the multiple grooves may each have two inclined surfaces facing different directions.

[0106] Furthermore, the magnetic sensor of the present invention can also be part of a geomagnetic sensor for detecting geomagnetism. In addition to the magnetic sensor of the present invention, the geomagnetic sensor may also include a magnetic sensor configured to detect magnetic field components in a direction parallel to the X-direction and a magnetic sensor configured to detect magnetic field components in a direction parallel to the Y-direction.

[0107] As described above, the magnetic sensor of the present invention includes: a support member comprising a first inclined surface and a second inclined surface that are respectively inclined relative to a reference plane and oriented in different directions; a first magnetoresistive element disposed on the first inclined surface; a second magnetoresistive element disposed on the second inclined surface; and a first electrode that connects the first magnetoresistive element and the second magnetoresistive element, and includes a portion that overlaps with the center of gravity of the first magnetoresistive element and the center of gravity of the second magnetoresistive element when viewed from a first direction perpendicular to the reference plane.

[0108] In the magnetic sensor of the present invention, the first magnetoresistive element and the second magnetoresistive element may each include a magnetization fixed layer whose magnetization direction is fixed, and a free layer whose magnetization direction can change according to the applied magnetic field. The direction of the magnetization of the magnetization fixed layer of the first magnetoresistive element when projected perpendicularly onto the reference plane, and the direction of the magnetization of the magnetization fixed layer of the second magnetoresistive element when projected perpendicularly onto the reference plane, may also be opposite to each other.

[0109] Furthermore, in the magnetic sensor of the present invention, the first magnetoresistive element and the second magnetoresistive element may also be arranged along a second direction parallel to the reference plane. The first magnetoresistive element and the second magnetoresistive element may also each have a shape that is longer in a third direction orthogonal to the second direction and parallel to the reference plane. The size of the first electrode in the third direction orthogonal to the second direction and parallel to the reference plane may also be larger than the size of the first inclined surface in the second direction and the size of the second inclined surface in the second direction.

[0110] Furthermore, in the magnetic sensor of the present invention, when viewed from the first direction, the first electrode may also overlap with the entire first magnetoresistive element and the entire second magnetoresistive element.

[0111] Furthermore, the magnetic sensor of the present invention may also include a third magnetoresistive element, a fourth magnetoresistive element, and a second electrode. The support member may also have a first convex surface and a second convex surface extending away from the reference plane, respectively. The first convex surface may also include a first inclined surface and a second inclined surface. The second convex surface may also include a third inclined surface and a fourth inclined surface that are respectively inclined relative to the reference plane and oriented in mutually different directions. The third magnetoresistive element may also be disposed on the third inclined surface. The fourth magnetoresistive element may also be disposed on the fourth inclined surface. The second electrode may also connect the third magnetoresistive element and the fourth magnetoresistive element, and include a portion that overlaps with the center of gravity of the third magnetoresistive element and the center of gravity of the fourth magnetoresistive element when viewed from a first direction. The first electrode may also connect the first magnetoresistive element, the second magnetoresistive element, the third magnetoresistive element, and the fourth magnetoresistive element. The magnetic sensor of the present invention may also include a third electrode that connects the first magnetoresistive element and the second magnetoresistive element, and includes a portion that overlaps with the center of gravity of the first magnetoresistive element and the center of gravity of the second magnetoresistive element when viewed from a first direction. The second electrode may not be directly connected to the first and second magnetoresistive elements. Similarly, the third electrode may not be directly connected to the third and fourth magnetoresistive elements. The support member may also have a non-convex surface located between the first and second convex surfaces. One end of the second electrode and one end of the third electrode may also be spaced apart on the non-convex surface. The first and second magnetoresistive elements may also be disposed between the first and third electrodes. The third and fourth magnetoresistive elements may also be disposed between the first and second electrodes.

[0112] In the case where the magnetic sensor of the present invention includes third and fourth magnetoresistive elements and a second electrode, the magnetic sensor of the present invention may further include a third electrode that connects the second and third magnetoresistive elements and includes a portion that overlaps with the centroids of the second and third magnetoresistive elements when viewed from a first direction. The support member may also have a non-convex surface located between the first and second convex surfaces. One end of the first electrode and one end of the second electrode may also be spaced apart on the non-convex surface. The magnetic sensor of the present invention may further include a fourth electrode that is connected to the first magnetoresistive element and includes a portion that overlaps with the centroid of the first magnetoresistive element when viewed from a first direction. One end of the third electrode and one end of the fourth electrode may also be spaced apart near the boundary between the first and second inclined surfaces. The second magnetoresistive element may also be disposed between the first and third electrodes. The third magnetoresistive element may also be disposed between the second and third electrodes.

[0113] The method for manufacturing the magnetic sensor of the present invention includes steps of forming a first magnetoresistive element and a second magnetoresistive element. The first and second magnetoresistive elements each comprise a magnetization-fixed layer whose magnetization direction is fixed, and a free layer whose magnetization direction can change according to an applied magnetic field. The steps of forming the first and second magnetoresistive elements include a step of forming a laminated film comprising an initial magnetization-fixed layer and a free layer that subsequently become the magnetization-fixed layer, and a fixing step of fixing the magnetization direction of the initial magnetization-fixed layer using a laser and an external magnetic field. The fixing step includes a first step of fixing the magnetization direction of the initial magnetization-fixed layer in the portion of the laminated film that subsequently becomes the first magnetoresistive element, and a second step of fixing the magnetization direction of the initial magnetization-fixed layer in the portion of the laminated film that subsequently becomes the second magnetoresistive element, after the first step.

[0114] As can be seen from the above description, various methods and variations of the present invention can be implemented. Therefore, within the scope of the claims, the present invention can be implemented even in ways other than those described above.

Claims

1. A magnetic sensor, characterized in that, have: A support component, comprising a first inclined surface and a second inclined surface that are inclined relative to a reference plane and oriented in different directions; A first magnetoresistive element is disposed on the first inclined surface; A second magnetoresistive element is disposed on the second inclined surface; and A first electrode connects the first magnetoresistive element and the second magnetoresistive element, and includes a portion that overlaps with the centroid of the first magnetoresistive element and the centroid of the second magnetoresistive element when viewed from a first direction perpendicular to the reference plane.

2. The magnetic sensor according to claim 1, characterized in that, The first magnetoresistive element and the second magnetoresistive element each include a magnetization fixed layer whose magnetization direction is fixed, and a free layer whose magnetization direction can change according to the applied magnetic field. The direction of magnetization of the magnetization fixing layer of the first magnetoresistive effect element when projected perpendicularly onto the reference plane is opposite to the direction of magnetization of the magnetization fixing layer of the second magnetoresistive effect element when projected perpendicularly onto the reference plane.

3. The magnetic sensor according to claim 1, characterized in that, The first magnetoresistive element and the second magnetoresistive element are arranged along a second direction parallel to the reference plane. The first magnetoresistive element and the second magnetoresistive element each have a shape that is longer in a third direction orthogonal to the second direction and parallel to the reference plane.

4. The magnetic sensor according to claim 1, characterized in that, The first magnetoresistive element and the second magnetoresistive element are arranged along a second direction parallel to the reference plane. The size of the first electrode in the third direction, which is orthogonal to the second direction and parallel to the reference plane, is greater than the size of the first inclined surface in the second direction and the size of the second inclined surface in the second direction.

5. The magnetic sensor according to claim 1, characterized in that, When viewed from the first direction, the first electrode overlaps with the entirety of the first magnetoresistive element and the entirety of the second magnetoresistive element.

6. The magnetic sensor according to claim 1, characterized in that, It also has: Third magnetoresistive effect element; The fourth magnetoresistive element; and Second electrode, The support member has a first convex surface and a second convex surface that extend in a direction away from the reference plane, respectively. The first convex surface includes the first inclined surface and the second inclined surface. The second convex surface includes a third inclined surface and a fourth inclined surface that are respectively inclined relative to the reference plane and oriented in different directions. The third magnetoresistive element is disposed on the third inclined surface. The fourth magnetoresistive element is disposed on the fourth inclined surface. The second electrode connects the third magnetoresistive element and the fourth magnetoresistive element, and includes a portion that overlaps with the center of gravity of the third magnetoresistive element and the center of gravity of the fourth magnetoresistive element when viewed from the first direction.

7. The magnetic sensor according to claim 6, characterized in that, The first electrode connects the first magnetoresistive element, the second magnetoresistive element, the third magnetoresistive element, and the fourth magnetoresistive element.

8. The magnetic sensor according to claim 7, characterized in that, It also includes: a third electrode that connects the first magnetoresistive element and the second magnetoresistive element, and includes a portion that overlaps with the center of gravity of the first magnetoresistive element and the center of gravity of the second magnetoresistive element when viewed from the first direction. The second electrode is not directly connected to the first magnetoresistive element or the second magnetoresistive element. The third electrode is not directly connected to the third magnetoresistive effect element or the fourth magnetoresistive effect element.

9. The magnetic sensor according to claim 8, characterized in that, The support member further comprises a non-convex surface located between the first convex surface and the second convex surface. One end of the second electrode and one end of the third electrode are arranged spaced apart on the non-convex surface.

10. The magnetic sensor according to claim 8, characterized in that, The first magnetoresistive element and the second magnetoresistive element are disposed between the first electrode and the third electrode. The third magnetoresistive element and the fourth magnetoresistive element are disposed between the first electrode and the second electrode.

11. The magnetic sensor according to claim 6, characterized in that, It also includes: a third electrode that connects the second magnetoresistive element and the third magnetoresistive element, and includes a portion that overlaps with the center of gravity of the second magnetoresistive element and the center of gravity of the third magnetoresistive element when viewed from the first direction.

12. The magnetic sensor according to claim 11, characterized in that, The support member further comprises a non-convex surface located between the first convex surface and the second convex surface. One end of the first electrode and one end of the second electrode are arranged at a distance from each other on the non-convex surface.

13. The magnetic sensor according to claim 11, characterized in that, It also includes: a fourth electrode, which is connected to the first magnetoresistive effect element and includes a portion that overlaps with the center of gravity of the first magnetoresistive effect element when viewed from the first direction.

14. The magnetic sensor according to claim 13, characterized in that, One end of the third electrode and one end of the fourth electrode are disposed at a distance from each other near the boundary between the first inclined surface and the second inclined surface.

15. The magnetic sensor according to claim 11, characterized in that, The second magnetoresistive element is disposed between the first electrode and the third electrode. The third magnetoresistive element is disposed between the second electrode and the third electrode.

16. A method for manufacturing a magnetic sensor, characterized in that, The method for manufacturing the magnetic sensor as described in claim 1. The manufacturing method includes the steps of forming the first magnetoresistive element and the second magnetoresistive element. The first magnetoresistive element and the second magnetoresistive element each include a magnetization fixed layer whose magnetization direction is fixed, and a free layer whose magnetization direction can change according to the applied magnetic field. The steps for forming the first magnetoresistive element and the second magnetoresistive element include: The process of forming a laminated film comprising an initial magnetized fixed layer that subsequently becomes the magnetized fixed layer, and the free layer; and A fixing process that uses lasers and external magnetic fields to fix the direction of magnetization of the initial magnetization fixing layer. The fixing process includes: a first step of fixing the magnetization direction of the initial magnetization fixing layer in the portion of the laminated film that later becomes the first magnetoresistive effect element; and a second step of fixing the magnetization direction of the initial magnetization fixing layer in the portion of the laminated film that later becomes the second magnetoresistive effect element after the first step.

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