Atomic layer deposition apparatus and method for coating substrate
By setting a dielectric layer and blocking the gas flow path in the plasma ALD reaction chamber, the problem of electrical short circuits forming between the electrode and the reaction chamber wall was solved, thus achieving stability and safety in the deposition process.
Patent Information
- Application Number
- CN202480024865.3
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Priority Date
- 2023-04-11
- Filing Date
- 2024-04-10
- Publication Date
- 2025-11-11
AI Technical Summary
In a plasma ALD reaction chamber, the coating not only forms on the surface of the deposited object, but also on the walls of the reaction chamber, causing an electrical short circuit between the electrode and the reaction chamber wall.
A dielectric layer is placed between the top wall of the reaction chamber and the electrode assembly, and a blocking gas is supplied through a gas supply opening to form a gap to block the gas flow path, prevent the precursor gas from entering the gap, and avoid the formation of a coating between the electrode and the reaction chamber.
This effectively prevents electrical short circuits between the electrode assembly and the reaction chamber, ensuring the stability and safety of the deposition process.
Smart Images
Figure CN120936742A_ABST
Abstract
Description
Technical Field
[0001] The present invention relates to an atomic layer deposition apparatus for continuously processing the surface of a substrate using at least a first precursor and a second precursor according to the principle of atomic layer deposition, and more particularly, to an apparatus as defined in the preamble of independent claim 1.
[0002] The present invention also relates to a method for coating a substrate in a plasma ALD reaction chamber, as defined in the preamble of independent claim 11, by subjecting the surface of the substrate to a continuous surface reaction of a first precursor and a second precursor in accordance with the principle of atomic layer deposition. Background Technology
[0003] In existing solutions, when a conductive coating is deposited in a plasma ALD reaction chamber, the coating is formed not only on the surface to which it is deposited but also on the walls of the reaction chamber. When a coating is formed between the electrode and the walls of the reaction chamber to connect them, an electrical short circuit occurs. Summary of the Invention
[0004] The purpose of this invention is to provide an apparatus and method that solves or at least alleviates the shortcomings of the prior art.
[0005] The object of the present invention is achieved by an apparatus and method characterized by the features set forth in the independent claims. Preferred embodiments of the invention are disclosed in the dependent claims.
[0006] The present invention is based on the concept of providing a dielectric layer and a blockage gas flow associated with the dielectric layer to prevent the formation of a film between the reaction chamber and the electrode assembly, thereby preventing electrical short circuits.
[0007] According to the present invention, an atomic layer deposition apparatus is provided for continuously treating the surface of a substrate using at least a first precursor and a second precursor according to the principle of atomic layer deposition. The apparatus includes a reaction chamber having a top wall, a bottom wall, and at least one side wall, the walls forming a reaction space inside the reaction chamber. The apparatus further includes: an electrode assembly arranged to be connected to the top wall; a counter electrode arranged opposite the electrode assembly at a distance from the electrode assembly, such that a reaction zone is formed between the electrode assembly and the counter electrode; and a precursor supply opening through which the precursors are supplied to the reaction space. The device further includes: a connecting element disposed between the electrode assembly and the top wall of the reaction chamber, such that the electrode assembly is connected to the top wall via the connecting element; a dielectric layer disposed on the inner surface of the top wall of the reaction chamber; a gap formed between the upper surface of the electrode assembly and the dielectric layer on the inner surface of the top wall of the reaction chamber, for providing a flow path for a blocking gas to prevent the formation of a precursor film between the electrode assembly and the reaction chamber; and a gas supply opening extending into the gap for supplying blocking gas from a blocking gas channel to the gap. The gap extends between the connecting element and the outer periphery of the electrode assembly and opens into the reaction space through the outer periphery of the electrode assembly.
[0008] In other words, the electrode assembly and the electrode pair are arranged separately from each other, forming a reaction zone between the electrode assembly and the electrode pair for the reaction to occur during the plasma ALD process. When the electrode assembly is energized, the electrode pair is grounded. The precursor supply opening provides a flow path for the precursor from the precursor source to enter the reaction space inside the reaction chamber. The electrode is connected to the top wall of the reaction chamber by a connecting element, such that the connecting element is arranged between the top wall of the reaction chamber and the electrode. Thus, a gap is formed between the top wall of the reaction chamber and the electrode. The distance between the top wall of the reaction chamber and the electrode is preferably only a few millimeters, for example, 0.2 mm to 5 mm, and preferably 0.3 mm to 2 mm, such that the maximum distance between the top wall of the reaction chamber and the electrode is 5 mm, and preferably 2 mm, and the minimum distance between the top wall of the reaction chamber and the electrode is only 0.2 mm, and preferably 0.3 mm. The top wall includes a dielectric layer, which may be in the form of a dielectric coating, a dielectric plate, a dielectric sheet, or any other dielectric covering over the top wall, such that the top wall is covered with an electrical insulator to prevent charge from flowing through the covering. The gap formed between the top wall of the reaction chamber and the electrode assembly is thus formed between the dielectric layer on the top wall of the reaction chamber and the upper surface of the electrode assembly. A gas supply opening extends into the gap, thus providing a flow path for the blocking gas from the blocking gas channel to the gap. The gas supply opening, providing a flow path for the blocking gas to the gap, together with the dielectric layer, prevents precursor gas from entering the gap from the reaction zone, and particularly prevents the formation of a coating at the connection between the top wall of the reaction chamber and the electrode assembly, thereby preventing the possibility of an electrical short circuit. The gap between the dielectric layer disposed on the upper surface of the electrode assembly and the inner surface of the top wall of the reaction chamber extends parallel to the upper surface of the electrode assembly between the connecting element and the outer periphery of the electrode assembly. The connecting element may include additional structures for shortening the length of the gap, such that the gap extends from the outer periphery of the electrode assembly to the connecting element, and possible structures surrounding the connecting element, these structures forming opposite ends of the gap relative to the outer periphery of the electrode assembly. The outer periphery of the electrode assembly is the edge of the electrode assembly closest to at least one sidewall of the reaction chamber. In other words, the outer periphery of the electrode assembly forms the end edge of the upper surface of the electrode assembly. The gap is opened to the reaction space through the outer periphery of the electrode assembly such that the electrode assembly is arranged at a distance from at least one sidewall of the reaction chamber, thereby forming a flow path for the blocking gas from the gap to the reaction space between the at least one sidewall and the electrode assembly. The electrode assembly has an outer peripheral surface, meaning that the flow path for the blocking gas is formed between the at least one sidewall of the reaction chamber and the outer peripheral surface of the electrode assembly.
[0009] According to the invention, the blocking gas channel is arranged to extend inside the electrode assembly such that the gas supply opening is located on the upper surface of the electrode assembly, and the blocking gas is supplied from the blocking gas channel to the gap through the gas supply opening.
[0010] In other words, the gas supply opening is located on the upper surface of the electrode assembly, extends through the upper surface of the electrode assembly into the gap, and the blocking gas channel extends inside the electrode assembly, such that the blocking gas channel is in flow connection with a gas source outside the reaction chamber. The gas source can provide an inert gas as the blocking gas or a precursor gas as the blocking gas.
[0011] According to the invention, the blocking gas channel is arranged to extend through the top wall of the reaction chamber, such that the gas supply opening is located on the inner surface of the top wall of the reaction chamber having the dielectric layer, and the blocking gas is supplied from the blocking gas channel to the gap through the gas supply opening.
[0012] In other words, the gas supply opening is located on the inner surface of the top wall of the reaction chamber, extends through the top wall of the reaction chamber into the gap, and the blocking gas channel extends inside the top wall of the reaction chamber, such that the blocking gas channel is in flow connection with a gas source outside the reaction chamber. The gas source can provide an inert gas as the blocking gas or a precursor gas as the blocking gas. In a preferred embodiment of the invention, a vacuum chamber surrounds the reaction chamber, and the blocking gas channel extends through the top wall of the reaction chamber between the gap and the vacuum chamber, and the blocking gas supplied through the blocking gas channel is the inert gas in the vacuum chamber.
[0013] According to the invention, the gas supply opening is arranged closer to the connection element than the outer periphery of the electrode assembly.
[0014] In other words, the gas supply opening that provides the flow path of the blocking gas from the blocking gas channel to the gap is located on the upper surface of the electrode assembly, such that the gas supply opening is closer to the connecting element on the upper surface of the electrode assembly than on the outer periphery of the electrode assembly, and preferably closer to the connecting element on the upper surface of the electrode assembly.
[0015] According to the invention, the electrode assembly includes an upper surface facing the top wall of the reaction chamber, a lower surface facing the bottom wall of the reaction chamber, and a peripheral surface facing the at least one side wall of the reaction chamber. The electrode assembly is arranged at a distance from the at least one side wall such that the flow path extends from the first gap through the outer periphery of the upper surface of the electrode assembly to a second gap located between the peripheral surface of the electrode assembly and the at least one side wall of the reaction chamber.
[0016] In other words, the flow path of the blocking gas extends within the reaction chamber from the gas supply opening through the gap between the upper surface of the electrode assembly and the inner surface of the top wall of the reaction chamber, including the dielectric layer (i.e., a first gap extending parallel to the upper surface of the electrode assembly) to the gap between at least one side wall of the reaction chamber and the outer peripheral surface of the electrode assembly (i.e., a second gap extending parallel to the at least one side wall of the reaction chamber). Thus, the first gap and the second gap extend laterally relative to each other.
[0017] According to the invention, the dielectric layer is arranged to extend from the inner surface of the top wall of the reaction chamber to at least one side wall of the reaction chamber.
[0018] In other words, the dielectric layer covers the inner surface of the top wall of the reaction chamber and extends to the inner surface of the at least one side wall of the reaction chamber. In a preferred embodiment of the invention, there is no discontinuity in the dielectric layer when moving from the top wall to the at least one side wall. The dielectric layer is preferably disposed on the at least one side wall of the reaction chamber in a region opposite to the outer peripheral surface of the electrode assembly.
[0019] According to the invention, the dielectric layer is arranged to extend from the inner surface of the top wall of the reaction chamber to at least one side wall of the reaction chamber, such that the dielectric layer at the at least one side wall of the reaction chamber forms the second gap between the dielectric layer and the peripheral surface of the electrode assembly.
[0020] In other words, the dielectric layer covers the inner surface of the top wall of the reaction chamber and extends to the inner surface of the at least one side wall of the reaction chamber. In a preferred embodiment of the invention, there is no discontinuity in the dielectric layer when moving from the top wall to the at least one side wall. Preferably, the dielectric layer is disposed in the region opposite to the outer peripheral surface of the electrode assembly at the at least one side wall of the reaction chamber, such that the dielectric layer is provided along the region of the second gap.
[0021] According to the invention, the device further includes a spray head for supplying a precursor to the reaction space, the spray head including the precursor supply opening and the electrode assembly.
[0022] In other words, the device includes a spray head that serves as a nozzle for supplying precursors into the reaction space inside the reaction chamber through a plurality of precursor supply openings. The precursor supply openings are thus located at the spray head. The spray head includes a supply surface having the precursor supply openings. The supply surface faces the pair of electrodes, such that the reaction zone is formed between the supply surface of the spray head and the pair of electrodes. The spray head further includes an electrode assembly that forms part of the spray head. The electrode assembly forms the upper portion of the spray head, and the upper surface of the electrode assembly faces the top wall of the reaction chamber.
[0023] According to the invention, the device further includes a blocking gas channel having a gas supply opening that opens into a gap for supplying blocking gas from the blocking gas channel to the gap, and the blocking gas channel is arranged to extend inside the spray head such that the gas supply opening is located at the upper surface of the electrode assembly, and the blocking gas is supplied from the blocking gas channel to the gap through the gas supply opening.
[0024] In other words, the blocking gas channel extends inside the spray head to supply blocking gas from a gas source to the gap between the dielectric layer located on the upper surface of the electrode assembly and the inner surface of the top wall of the reaction chamber. This blocking gas channel extending inside the spray head may be a separate gas channel from the precursor supply channel, which extends inside the spray head and forms a flow connection with the reaction space through the precursor supply opening for supplying precursor from the precursor source to the reaction zone. Alternatively, the blocking gas channel may be part of the precursor supply channel, which supplies precursor from the precursor source outside the reaction chamber to both the reaction zone and the gap. The precursor supplied to the gap will not form a film in the absence of plasma or one or more co-reactant precursors, as is performed in the reaction zone.
[0025] According to the invention, the device further includes a vacuum chamber, and the reaction chamber is arranged inside the vacuum chamber.
[0026] In other words, the vacuum chamber surrounds the reaction chamber.
[0027] According to the present invention, in a method for coating a substrate in a plasma ALD reaction chamber by subjecting the surface of a substrate to a continuous surface reaction of a first precursor and a second precursor according to the principle of atomic layer deposition, the reaction chamber includes: a top wall, a bottom wall, and at least one side wall forming a reaction space inside the reaction chamber; an electrode assembly arranged to be connected to the top wall; a counter electrode arranged opposite to the electrode assembly at a distance from the electrode assembly; a reaction zone disposed between the electrode assembly and the counter electrode; and a precursor supply opening through which the precursors are supplied to the reaction zone. The method includes: arranging the substrate in the reaction zone; supplying a blocking gas from a blocking gas channel to a gap between a dielectric layer formed on the upper surface of the electrode assembly and the inner surface of the top wall through a gas supply opening; supplying a precursor from a precursor gas source to the reaction zone through the precursor supply opening; guiding the blocking gas along the gap toward the reaction zone to prevent the precursor from entering the gap; and generating a plasma discharge in the reaction zone using the electrode assembly.
[0028] In other words, the method includes the step of supplying the blocking gas from the blocking gas channel through the gas supply opening into the gap, the gap being formed between the inner surface of the top wall of the reaction chamber having the dielectric layer and the upper surface of the electrode assembly. The method further includes the step of supplying a precursor from a precursor source into the reaction zone through the precursor supply opening, which may, for example, be disposed to at least one sidewall of the reaction chamber such that the precursor is supplied toward the opposite sidewall, or disposed to a spray head arranged to connect with the top wall of the reaction chamber such that the precursor is supplied toward the pair of electrodes. The method further includes the step of guiding the blocking gas along the gap (i.e., in a direction parallel to the top wall of the reaction chamber having the dielectric layer, or alternatively or additionally, in a direction parallel to the upper surface of the electrode assembly). The method further includes the step of guiding the blocking gas toward the reaction zone (meaning supplying the blocking gas toward the reaction zone along the gap and further at the end of the gap parallel to the surface of at least one sidewall of the reaction chamber, the reaction zone being located on the side of the electrode assembly opposite to the upper surface).
[0029] According to the present invention, the method further includes supplying a precursor from the precursor gas source to a spray head having the precursor supply opening, and further supplying the precursor from the spray head through the precursor supply opening to the reaction zone.
[0030] In other words, the step of supplying the precursor includes supplying the precursor through a spray head having a precursor supply opening. The spray head preferably includes multiple precursor supply openings. The method includes supplying the precursor from the spray head to the reaction zone through the precursor supply openings, the reaction zone being disposed between the spray head and the electrode pair, the spray head including the electrode assembly.
[0031] According to the present invention, the method further includes supplying the precursor from the precursor source to the gap as the blocking gas through the blocking gas channel and further supplying the precursor from the precursor source to the reaction zone as plasma gas through the precursor supply opening.
[0032] In other words, the method includes the steps of: supplying a blocking gas, which is a precursor, into the gap; and supplying the same precursor into the reaction zone through the precursor supply opening. The precursor supplied to the reaction zone is activated by the plasma in the reaction zone to form a film on the surface of the substrate, while the precursor supplied to the gap does not form a film on the inner surface of the top wall of the reaction chamber or the upper surface of the electrode assembly because it is not activated by the plasma when supplied to the gap.
[0033] According to the present invention, the method further includes supplying an inert gas as the blocking gas from an inert gas source to the gap through the blocking gas channel.
[0034] In other words, the method includes the step of supplying a blocking gas into the gap, the blocking gas being an inert gas, such as nitrogen (N2). 2 ).
[0035] According to the invention, the reaction chamber is arranged inside a vacuum chamber, and the method further includes supplying an inert gas from the vacuum chamber through the top wall of the reaction chamber to the gap.
[0036] In other words, the method includes the step of supplying an inert gas from the vacuum chamber surrounding the reaction chamber to the gap through a blocking gas channel extending through the top wall of the reaction chamber. The inert gas is an inert gas that is prevalent in the vacuum chamber.
[0037] According to the invention, the method further includes guiding the blocking gas toward the reaction zone from the periphery of the upper surface of the electrode assembly along the gap and further along a path between the outer peripheral surface of the electrode assembly and the at least one sidewall of the reaction chamber.
[0038] In other words, the method includes the step of guiding the blocking gas along the gap parallel to the top wall of the reaction chamber toward the outer periphery of the upper surface of the electrode assembly, and further along the surface of the at least one side wall toward the reaction zone. This means that the method includes supplying the blocking gas along the top wall of the reaction chamber up to a corner region of the reaction chamber, and from there supplying the blocking gas along the surface of the at least one side wall of the reaction chamber, which protects the surface of the reaction chamber from film formation due to active precursors from the reaction zone.
[0039] According to the present invention, the method is performed using the apparatus described above.
[0040] One advantage of the present invention is that the dielectric layer, together with the blocking gas, prevents the formation of a film on the surface of the reaction chamber and prevents the possibility of an electrical short circuit between the electrode assembly and the reaction chamber due to the conductive coating. Attached Figure Description
[0041] The present invention will now be described in detail with reference to the accompanying drawings and specific embodiments, wherein... Figure 1 illustrates the device according to the present invention; Figure 2 shows the device according to the invention as seen from above; Figure 3 shows a device according to the invention, which also has a dielectric layer at the sidewalls; Figure 4 shows a device according to the invention, which has a gas supply opening at the top wall; Figure 5 shows a device according to the invention, which has a spray head and also has a dielectric layer on the sidewalls; Figure 6 illustrates a device with a spray head according to the present invention; and Figure 7 shows the device of the present invention with different geometries. Detailed Implementation
[0042] Figure 1 illustrates an apparatus 1 according to the invention, which has a reaction chamber 10 and a vacuum chamber 20 surrounding the reaction chamber 10. The reaction chamber 10 has a top wall 11, a bottom wall 12, and at least one side wall 13, which form a reaction space 15 inside the reaction chamber 10. The apparatus 1 further includes an electrode assembly 2 arranged to be connected to the top wall 11. The electrode assembly 2 has an upper surface 2a facing the top wall 11 of the reaction chamber 10, an outer periphery 22 having an outer peripheral surface 2b facing at least one side wall 13 of the reaction chamber 10, and a lower surface 2c facing the bottom wall 12. The reaction chamber 10 further includes a counter electrode 3, which is arranged opposite the electrode assembly 2 at a distance from the electrode assembly 2, such that a reaction zone 15a is formed between the electrode assembly 2 and the counter electrode 3. The counter electrode 3 is preferably configured to be connected to the bottom wall 12. The reaction chamber 10 further includes a precursor supply opening 4 through which a precursor is supplied into the reaction space 15, and particularly into the reaction zone 15a. Device 1 further includes a connecting element 14 that connects the electrode assembly 2 to the top wall 11 of the reaction chamber 10. Device 1 also includes a dielectric layer 5 disposed on the inner surface 11a of the top wall 11 of the reaction chamber 10. A gap 6 is formed between the top wall 11 of the reaction chamber 10 and the electrode assembly 2. In other words, the gap 6 is formed between the dielectric layer 5 disposed on the inner surface 11a of the top wall 11 and the upper surface 2a of the electrode assembly 2. All of the above applies to all devices shown in Figures 1 to 6.
[0043] Figure 1 further illustrates a gas supply opening 7 formed on the upper surface 2a of the electrode assembly 2, which opens into the gap 6 for supplying blocking gas from the blocking gas channel 17 to the gap 6. The blocking gas channel 17 extends inside the electrode assembly 2 and is flow-connected to a gas source outside the reaction chamber 10. The blocking gas channel 17 extends from inside the electrode assembly 2 through the connecting element 14 and further through the outside of the reaction chamber 10 and the vacuum chamber 20 to the gas source. When blocking gas is supplied from the gas supply opening 7 at the upper surface 2a of the electrode assembly 2, the flow path 8 of the blocking gas extends along the gap 6 parallel to the dielectric layer 5 to the outer periphery 22 of the electrode assembly 2, and along the outer peripheral surface 2b of the electrode assembly 2 toward the reaction zone 15. In Figure 1, a precursor supply opening 4 is arranged on the side wall 13 of the reaction chamber 10.
[0044] Figure 2 shows the device 1 shown in Figure 1 as viewed from above along line AA as seen in Figure 1. In this example, device 1 has a circular geometry with a vacuum chamber 20 surrounding a reaction chamber 10, which has sidewalls 13. A connecting element 14 forms a connection with the top wall (not shown in the figure) of the reaction chamber 10. Electrode assembly 2 has an upper surface 2a that blocks gas flow along the upper surface toward the outer periphery 22 of electrode assembly 2 and beyond the outer periphery 22 to a second gap located between at least one sidewall 13 and the outer peripheral surface 2b of electrode assembly 2. In this example, a gas supply opening 7 is located on the upper surface 2a of electrode assembly 2, close to the connecting element 14. However, the gas supply opening 7 is preferably always positioned closer to the end of the connecting element or gap 6 than the outer periphery 22 of electrode assembly 2.
[0045] Figure 3 shows a structure otherwise identical to device 1 as shown in Figure 1, but the dielectric layer 5 also extends to at least one sidewall 13 of the reaction chamber 10. The dielectric layer 5 preferably extends along the length of the second gap 9 between the sidewall 13 and the outer peripheral surface 2b of the electrode assembly 2. In Figure 3, a precursor supply opening 4 is arranged at the sidewall 13 of the reaction chamber 10.
[0046] Figure 4 shows a structure otherwise identical to device 1 as shown in Figure 1, except that the gas supply opening 7 is located on the top wall 11 of the reaction chamber 10, and the gas passage 17 extends from the vacuum chamber 20 through the top wall 11 of the reaction chamber 10 to the gap 6. The gas supply opening 7 is positioned closer to the connecting element 14 than the outer periphery 22 of the electrode assembly 2. In Figure 4, the precursor supply opening 4 is located on the side wall 13 of the reaction chamber 10.
[0047] Figure 5 illustrates a device 1 according to the invention, having the same structural components as described in conjunction with Figure 1, and is said to apply to all figures. The device shown in Figure 5 further includes a spray head 24 having a precursor supply opening 4 through which the precursor is supplied to a reaction zone 15 disposed between the spray head 24 and the counter electrode 3. The spray head 24 also includes an electrode assembly 2 having an upper surface 2a, an outer peripheral surface 2b, and a lower surface 2c. A gas supply opening 7 is formed at the upper surface 2a of the electrode assembly 2, opening into a gap 6 for supplying blocking gas from a blocking gas channel 17 to the gap 6. Since the electrode assembly 2 is part of the spray head 24, the blocking gas channel 17 extends inside the spray head 24 and is flowably connected to a gas source outside the reaction chamber 10 and outside the vacuum chamber 20. The blocking gas channel 17 extends from inside the electrode assembly 2 in the spray head 24 through a connecting element 14 and further through the outside of the reaction chamber 10 and the vacuum chamber 20 to the gas source. Alternatively, the blocking gas channel 17 may be part of a precursor channel that supplies the precursor to the spray head 24 and to the reaction zone 15 through the precursor supply opening 4. Thus, the gas source outside the vacuum chamber 20 is the precursor gas source, supplying the precursor as a blocking gas to both the reaction zone 15 and the gap 6. When the blocking gas is supplied from the gas supply opening 7 at the upper surface 2a of the electrode assembly 2 in the spray head 24, the flow path 8 of the blocking gas extends along the gap 6 parallel to the dielectric layer 5 to the outer periphery 22 of the electrode assembly 2, and extends along the outer peripheral surface 2b of the electrode assembly 2 toward the reaction zone 15. At least one sidewall 13 of the reaction chamber 10 also includes the dielectric layer 5 along a second gap 9 located between the sidewall 13 and the outer peripheral surface 2b of the electrode assembly 2 in the spray head 24.
[0048] Figure 6 illustrates a device 1 according to the invention, having the same structural components as described in conjunction with Figure 1, and reportedly applicable to all figures. The device shown in Figure 6 further includes a spray head 24 having a precursor supply opening 4 through which the precursor is supplied to a reaction zone 15 disposed between the spray head 24 and the counter electrode 3, similar to that described in conjunction with Figure 5. The spray head 24 also includes an electrode assembly 2 having an upper surface 2a, an outer peripheral surface 2b, and a lower surface 2c. A gas supply opening 7 is formed at the upper surface 2a of the electrode assembly 2, opening into a gap 6 for supplying blocking gas from a blocking gas channel 17 to the gap 6. Since the electrode assembly 2 is part of the spray head 24, the blocking gas channel 17 extends inside the spray head 24 and is flowably connected to a gas source outside the reaction chamber 10 and outside the vacuum chamber 20. The blocking gas channel 17 extends from inside the electrode assembly 2 in the spray head 24 through a connecting element 14 and further through the outside of the reaction chamber 10 and outside the vacuum chamber 20 to the gas source. Alternatively, the blocking gas channel 17 may be part of a precursor channel that supplies the precursor to the spray head 24 and to the reaction zone 15 through the precursor supply opening 4. Thus, the gas source outside the vacuum chamber 20 is the precursor gas source, supplying the precursor as blocking gas to both the reaction zone 15 and the gap 6. When blocking gas is supplied from the gas supply opening 7 at the upper surface 2a of the electrode assembly 2 in the spray head 24, the flow path 8 of the blocking gas extends along the gap 6 parallel to the dielectric layer 5 to the outer periphery 22 of the electrode assembly 2, and extends along the outer peripheral surface 2b of the electrode assembly 2 toward the reaction zone 15.
[0049] Figure 7 shows a cross-section of the above-presented device 1 according to the invention at the same point as shown in Figure 2, but with a different geometry. In this example, device 1 has a square geometry with a vacuum chamber 20 surrounding a reaction chamber 10, which has sidewalls 13. A connecting element 14 forms a connection with the top wall (not shown in the figure) of the reaction chamber 10. Electrode assembly 2 has an upper surface 2a along which a blocking gas flows toward the outer periphery 22 of electrode assembly 2 and through the outer periphery 22 to a second gap 9 located between at least one sidewall 13 and the outer periphery surface 2b of electrode assembly 2 (the outer periphery surface is not shown in the figure, but the outer periphery 22 is shown). In this example, a gas supply opening 7 is provided at the upper surface 2a of electrode assembly 2, close to the connecting element 14. The blocking gas is supplied from the gas supply opening 7 and flows toward the outer periphery 22 of electrode assembly 2 along the gap 6 in the flow path 8. The flow path 8 extends through the outer periphery 22 of the electrode assembly 2, where it reaches the second gap 9 extending along the outer periphery surface 2b of the electrode assembly 2 and along the sidewall 13 of the reaction chamber 10.
[0050] The invention has been described above with reference to the examples shown in the accompanying drawings. However, the invention is by no means limited to the above examples, but can be varied within the scope of the claims.
Claims
1. An atomic layer deposition apparatus (1) for continuously processing the surface of a substrate using at least a first precursor and a second precursor according to the atomic layer deposition principle, the apparatus (1) comprising: A reaction chamber (10) having a top wall (11), a bottom wall (12) and at least one side wall (13), the walls (11, 12, 13) forming a reaction space (15) inside the reaction chamber (10). Electrode assembly (2), the electrode assembly being arranged to connect with the top wall (11), Counter electrode (3), the counter electrode is arranged opposite to the electrode assembly (2) at a distance from the electrode assembly (2), such that a reaction zone (15a) is formed between the electrode assembly (2) and the counter electrode (3), and A precursor supply opening (4) is provided through which the precursor is supplied to the reaction space (15). The device is characterized in that it further comprises: A connecting element (14) is arranged between the electrode assembly (3) and the top wall (11) of the reaction chamber (10) such that the electrode assembly (2) is connected to the top wall (11) via the connecting element (14). A dielectric layer (5) is disposed on the inner surface (11a) of the top wall (11) of the reaction chamber (10). A gap (6) is formed between the dielectric layer (5) of the upper surface (2a) of the electrode assembly (2) and the inner surface (11a) of the top wall (11) of the reaction chamber (10) to provide a flow path (8) for blocking gas, thereby preventing the formation of a precursor film between the electrode assembly (2) and the reaction chamber (10). The gap (6) extends between the connecting element (14) and the outer periphery (22) of the electrode assembly (2) and opens through the outer periphery (22) of the electrode assembly to the reaction space (15). A gas supply opening (7) is provided, which extends into the gap (6) to supply blocking gas from the blocking gas channel (17) to the gap (6).
2. The atomic layer deposition apparatus (1) according to claim 1, characterized in that, The blocking gas channel (17) is arranged to extend inside the electrode assembly (2) such that the gas supply opening (7) is located on the upper surface (2a) of the electrode assembly (2), and the blocking gas is supplied from the blocking gas channel (17) to the gap (6) through the gas supply opening.
3. The atomic layer deposition apparatus (1) according to claim 1, characterized in that, The blocking gas channel (17) is arranged to extend through the top wall (11) of the reaction chamber, such that the gas supply opening (7) is located on the inner surface (11a) of the top wall (11) of the reaction chamber (10) having the dielectric layer (5), and the blocking gas is supplied from the blocking gas channel (17) to the gap (6) through the gas supply opening.
4. The atomic layer deposition apparatus (1) according to any of the preceding claims, characterized in that, The gas supply opening (7) is arranged closer to the connecting element (14) than the outer periphery (22) of the electrode assembly (2).
5. The atomic layer deposition apparatus (1) according to any of the preceding claims, characterized in that, The electrode assembly (2) includes an upper surface (2a) facing the top wall (11) of the reaction chamber (10), a lower surface (2c) facing the bottom wall (12) of the reaction chamber (10), and a peripheral surface (2b) facing at least one side wall (13) of the reaction chamber (10). The electrode assembly (2) is arranged at a distance from the at least one sidewall (13) such that the flow path (8) extends from the first gap (6) through the outer periphery (22) of the upper surface (2a) of the electrode assembly (2) to a second gap (9), the second gap being located between the peripheral surface (2b) of the electrode assembly (2) and at least one sidewall (13) of the reaction chamber (10).
6. The atomic deposition apparatus (1) according to any of the preceding claims, characterized in that, The dielectric layer (5) is arranged to extend from the inner surface (11a) of the top wall (11) of the reaction chamber (10) to at least one side wall (13) of the reaction chamber (10).
7. The atomic deposition apparatus (1) according to claim 5, characterized in that, The dielectric layer (5) is arranged to extend from the inner surface (11a) of the top wall (11) of the reaction chamber (10) to at least one side wall (13) of the reaction chamber (10), such that the dielectric layer (5) at at least one side wall (13) of the reaction chamber (10) forms the second gap (9) between the dielectric layer (5) and the peripheral surface (2b) of the electrode assembly (2).
8. The atomic deposition apparatus (1) according to any of the preceding claims, characterized in that, The device further includes a spray head (24) for supplying precursors to the reaction space (15), the spray head (24) including the precursor supply opening (4) and the electrode assembly (2).
9. The atomic deposition apparatus (1) according to claim 8, characterized in that, The device further includes a blocking gas channel (17) having a gas supply opening (7) that extends into the gap (6) for supplying blocking gas from the blocking gas channel (17) to the gap (6), and the blocking gas channel (17) is arranged to extend inside the spray head (24) such that the gas supply opening (7) is located at the upper surface (2a) of the electrode assembly (2), and the blocking gas is supplied from the blocking gas channel (17) to the gap (6) through the gas supply opening.
10. The atomic deposition apparatus (1) according to any of the preceding claims, characterized in that, The device further includes a vacuum chamber (20), and the reaction chamber (10) is arranged inside the vacuum chamber (20).
11. A method for coating a substrate in a plasma ALD reaction chamber (10) according to the principle of atomic layer deposition by subjecting the surface of a substrate to a continuous surface reaction of a first precursor and a second precursor, the reaction chamber comprising... The reaction chamber (10) comprises a top wall (11), a bottom wall (12), and at least one side wall (13), which form a reaction space (15) within the reaction chamber (10); an electrode assembly (2) arranged to be connected to the top wall (11); a counter electrode (3) arranged opposite to the electrode assembly (2), the counter electrode being located at a distance from the electrode assembly (2); a reaction zone (15a) disposed between the electrode assembly (2) and the counter electrode (3); and a precursor supply opening (4) through which the precursor is supplied to the reaction zone (15a), characterized in that, The method includes A substrate is arranged in the reaction zone (15a). Blocking gas is supplied from the blocking gas channel (17) to the gap (6) through the gas supply opening (7), the gap being formed between the upper surface (2a) of the electrode assembly (2) and the dielectric layer (5) disposed on the inner surface (11a) of the top wall (11). The precursor is supplied from the precursor gas source to the reaction zone (15a) through the precursor supply opening (4). The blocking gas is guided along the gap (6) toward the reaction zone (15a) to prevent the precursor from entering the gap (6), and The electrode assembly (2) is used to generate plasma discharge in the reaction zone (15a).
12. The method for processing a substrate according to claim 11, characterized in that, The method further includes: supplying a precursor from the precursor gas source to a spray head (24) having the precursor supply opening (4), and further supplying the precursor from the spray head (24) to the reaction zone (15a) through the precursor supply opening (4).
13. The method for processing a substrate according to claim 11 or 12, characterized in that, The method further includes: supplying the precursor from the precursor source to the gap (6) through the blocking gas channel (17) as the blocking gas, and further supplying the precursor from the precursor source to the reaction zone (15a) through the precursor supply opening (4) as the plasma gas.
14. The method for processing a substrate according to claim 12, characterized in that, The method further includes supplying inert gas as the blocking gas from an inert gas source to the gap (6) through the blocking gas channel (17).
15. The method for processing a substrate according to claim 14, characterized in that, The reaction chamber (10) is arranged inside the vacuum chamber (20), and the method further includes: Inert gas is supplied from the vacuum chamber (20) to the gap (6) through the top wall (11) of the reaction chamber (10).
16. The method for processing a substrate according to claim 14, characterized in that, The method further includes: The blocking gas is guided from the outside of the periphery of the upper surface (2a) of the electrode assembly (2) along the gap (6), and further guided towards the reaction zone (15a) along a path between the outer peripheral surface (2b) of the electrode assembly (2) and at least one sidewall (13) of the reaction chamber (10).
17. The method for processing a substrate according to any one of claims 11 to 16, characterized in that, The method is performed using the device according to any one of claims 1 to 10.