Power semiconductor module and power conversion device

Abstract

This power semiconductor module is provided with: a power semiconductor element; a first power line section and a second power line section electrically connected to the first electrode and the second electrode of the power semiconductor element, respectively; a heat dissipation plate capable of dissipating heat of the power semiconductor element; the sensor element is arranged on the surface of the heat dissipation plate; and a first sensor line portion and a second sensor line portion electrically connected to the sensor element, respectively. The heat dissipation plate has at least one through hole penetrating between the front surface and the back surface. The first sensor wire portion and the second sensor wire portion are led out to a region on the back surface of the heat dissipation plate through the through hole.

Description

Technical Field

[0001] This disclosure relates to power semiconductor modules and power conversion devices. Background Technology

[0002] Patent documents 1 and 2 disclose a technology related to a power semiconductor module for use in power conversion devices, etc. These patent documents describe the inclusion of a shunt resistor within the power semiconductor module for detecting the output current of the power semiconductor element.

[0003] Patent Document 1: Japanese Patent Application Publication No. 09-65662

[0004] Patent Document 2: Japanese Patent No. 4236909

[0005] The output voltage required by the aforementioned power conversion device is gradually increasing. As the output voltage increases, the voltage applied to the module components also increases. As a result, radiated noise (electromagnetic noise) from wires connected to the module components also increases. On the other hand, the detection signal of sensor elements such as shunt resistors located in the power semiconductor module is weak compared to the voltage applied to the power semiconductor components. Therefore, if the large radiated noise from wires connected to the power semiconductor components propagates to the terminals connected to sensor elements such as shunt resistors, the detection accuracy of the sensor elements decreases due to the noise. Summary of the Invention

[0006] Therefore, this disclosure describes a power semiconductor module and a power conversion device that can suppress the influence of radiated noise on the detection signal of a sensor element.

[0007] One aspect of this disclosure relates to a power semiconductor module comprising: a power semiconductor element having a first electrode, a second electrode, and a control electrode, wherein the first electrode and the second electrode are alternately switched between being conductive and non-conductive according to a control signal provided to the control electrode; a first power line portion and a second power line portion, respectively electrically connected to the first electrode and the second electrode, and transmitting power between the first electrode and the second electrode; a heat sink having a surface on which the power semiconductor element is disposed and a back surface opposite to the surface, and capable of dissipating heat from the power semiconductor element; a sensor element disposed on the surface of the heat sink; and a first sensor line portion and a second sensor line portion, respectively electrically connected to the sensor element; the heat sink including a shielding layer made of a material having at least one of electrical conductivity and magnetism; the heat sink having at least one through hole penetrating between the surface and the back surface; and only the first sensor line portion and the second sensor line portion being led out to the back surface of the heat sink through the through hole.

[0008] According to various methods of this disclosure, it is possible to suppress the influence of radiated noise on the detection signal of the sensor element. Attached Figure Description

[0009] Figure 1 This is a circuit diagram showing a power conversion device having a power semiconductor module with an implementation method.

[0010] Figure 2 It means Figure 1 A cross-sectional view of the power semiconductor module of the power conversion device.

[0011] Figure 3 Viewed from above Figure 2 A top view of the power semiconductor components of the power semiconductor module.

[0012] Figure 4 Viewed from above Figure 2 A top view of the shunt resistor of a power semiconductor module.

[0013] Figure 5 This is a simplified cross-sectional view of a power semiconductor module representing a comparative example.

[0014] Figure 6 It is a simplified representation Figure 2 A cross-sectional view of a power semiconductor module.

[0015] Figure 7 This is a cross-sectional view showing the power semiconductor module of Modified Example 1.

[0016] Figure 8 Viewed from above Figure 7 A top view of the shunt resistor of a power semiconductor module.

[0017] Figure 9 This is a cross-sectional view showing the power semiconductor module of Modified Example 2.

[0018] Figure 10 This is a cross-sectional view showing the power semiconductor module of Modified Example 3.

[0019] Figure 11 Viewed from above Figure 10 A top view of the shunt resistor of a power semiconductor module.

[0020] Figure 12 This is a cross-sectional view of the power semiconductor module in variation 4.

[0021] Figure 13 This is a cross-sectional view of the power semiconductor module in Modified Example 5.

[0022] Figure 14 This is a cross-sectional view showing the power semiconductor module of Modified Example 6. Detailed Implementation

[0023] One aspect of this disclosure relates to a power semiconductor module comprising: a power semiconductor element having a first electrode, a second electrode, and a control electrode, wherein the first electrode and the second electrode are alternately switched between being conductive and non-conductive according to a control signal provided to the control electrode; a first power line portion and a second power line portion, respectively electrically connected to the first electrode and the second electrode, and transmitting power between the first electrode and the second electrode; a heat sink having a surface on which the power semiconductor element is disposed and a back surface opposite to the surface, and capable of dissipating heat from the power semiconductor element; a sensor element disposed on the surface of the heat sink; and a first sensor line portion and a second sensor line portion, respectively electrically connected to the sensor element; the heat sink including a shielding layer made of a material having at least one of electrical conductivity and magnetism; the heat sink having at least one through hole penetrating between the surface and the back surface; and only the first sensor line portion and the second sensor line portion being led out to the back surface of the heat sink through the through hole.

[0024] In the aforementioned power semiconductor module, the conduction and non-conduction states between the first and second electrodes are alternately switched according to a control signal input to the control electrode. When the first and second electrodes are in the conduction state, a large electric current is applied, resulting in the radiation of large radiated noise from the first and second electric field lines connected to the first and second electrodes, respectively. In the aforementioned power semiconductor module, only the first and second sensor lines are led out to a region on the back side of the heat sink through at least one through-hole. Furthermore, the heat sink includes a shielding layer made of a material having at least one of electrical conductivity and magnetic properties. Therefore, the radiated noise radiated from the first and second electric field lines can be shielded using the heat sink. Therefore, in the aforementioned power semiconductor module, the first and second electric field lines on the surface of the heat sink, and the first and second sensor lines on the back of the heat sink, are separated by the heat sink, thereby suppressing the propagation of radiated noise from the first and second electric field lines through the heat sink to the first and second sensor lines. In this way, by utilizing the heat sink as a shield to block radiated noise, the propagation of large radiated noise from the first and second electric field lines to the first and second sensor lines connected to the sensor elements can be suppressed. Thus, the power semiconductor module can suppress the influence of radiated noise on the detection signal of the sensor elements.

[0025] In the aforementioned power semiconductor module, it can also be configured such that the sensor element is a shunt resistor for current measurement, electrically connected in series with the middle portion of the second power line section. As described above, a large power is applied to the first and second electrodes in the conducting state. On the other hand, for the shunt resistor used to detect the output current of the power semiconductor element, a shunt resistor with a small resistance value is used to suppress heat generation. Therefore, the voltage across the shunt resistor, which should be measured to detect the output current of the power semiconductor element, is extremely low compared to the high voltage applied to the power semiconductor element. Even when using such a shunt resistor, the power semiconductor module can suppress the influence of radiated noise on the detection signal of the shunt resistor (the voltage value across the shunt resistor). Therefore, in the power semiconductor module, the output current can be measured with greater accuracy using the shunt resistor.

[0026] In the aforementioned power semiconductor module, the shunt resistor can also be configured such that it is mounted on the surface of a heat sink, which dissipates heat from the shunt resistor. If current flows through the shunt resistor, it heats up. Even in this configuration, the power semiconductor module can utilize the heat sink to dissipate heat from the heated shunt resistor and shield against radiated noise.

[0027] In the power semiconductor module described above, at least one through-hole can be formed at a position that does not overlap with the first electric field line portion and the second electric field line portion when viewed from above. In this case, the power semiconductor module can suppress radiated noise from the first electric field line portion and the second electric field line portion from propagating to the back side of the heat sink through the through-hole.

[0028] In the aforementioned power semiconductor module, the heat sink can also be configured such that a through-hole is provided, through which the first sensor wire and the second sensor wire are led out to a region on the back side. By having both the first and second sensor wires pass through a single through-hole, the distance between them is reduced, and correspondingly, the area of ​​the loop formed by the first and second sensor wires is decreased. This reduction in loop area decreases the electromotive force generated when electromagnetic waves (radiated noise) interact with the loop. Therefore, the power semiconductor module can reduce the risk of large conducted noise being generated in the first and second sensor wires.

[0029] In the aforementioned power semiconductor module, the first and second sensor lines can also be led out to the back surface region through a through-hole while twisted together. In this case, it functions in such a way that even if radiated noise from the first and second power lines propagates to the first and second sensor lines, the conducted noise generated in the first and second sensor lines cancels out the conducted noise generated by the twisted portion in front of them. Therefore, the power semiconductor module can reduce the risk of large conducted noise being generated in the first and second sensor lines.

[0030] In the aforementioned power semiconductor module, the first sensor line and the second sensor line may also be configured such that a common-mode filter or transformer is included in the first sensor line and the second sensor line to remove the common-mode component of conducted noise transmitted in the first sensor line and the second sensor line, and the common-mode filter or transformer is disposed inside a through-hole. In this case, the common-mode component of conducted noise that may be generated in the first sensor line and the second sensor line can be removed, thereby suppressing the generation of fluctuations in the detection signal of the sensor element caused by the common-mode component. In addition, by disposing the common-mode filter or transformer inside the through-hole of the heat sink, the propagation of radiated noise from the first power line and the second power line to the first sensor line and the second sensor line via the common-mode filter or transformer can be suppressed.

[0031] Alternatively, the power semiconductor module described above may further include a cylindrical electromagnetic shielding member. This cylindrical electromagnetic shielding member is arranged to surround the first sensor line portion between its end on the sensor element side of the first sensor line portion and the opening of a through-hole on its surface, and includes a shielding layer made of a material having at least one of electrical conductivity and magnetism. In this case, the power semiconductor module can use the electromagnetic shielding member to shield radiated noise from the first and second electric field lines portions. Thus, the power semiconductor module can suppress the propagation of radiated noise into the first sensor line portion inside the electromagnetic shielding member.

[0032] In the aforementioned power semiconductor module, the heat sink can also be configured such that a first through-hole and a second through-hole are formed at different locations on the surface. A first sensor wire is led out to a region on the back side through the first through-hole, and a second sensor wire is led out to a region on the back side through the second through-hole. In this case, the first and second sensor wires can reach the first and second through-holes respectively with the shortest possible distance. Therefore, the portion of the first and second sensor wires exposed inside the housing that could transmit radiated noise can be minimized, thus reducing the risk of radiated noise propagating to the first and second sensor wires from inside the housing.

[0033] In the aforementioned power semiconductor module, at least one through-hole can also be formed at a location overlapping the sensor element when viewed from above the heat sink. In this case, the power semiconductor module enables the first sensor wire and the second sensor wire to reach the through-hole with the shortest possible distance. This minimizes the portion of the first and second sensor wires exposed inside the housing that could propagate radiated noise, thus reducing the risk of radiated noise propagating into the first and second sensor wires from inside the housing.

[0034] Alternatively, the power semiconductor module can be configured such that it includes a cover covering the surface of a heat sink on which the power semiconductor element is mounted. A first electric field line and a second electric field line extend from the first electrode and the second electrode toward the cover and are led out through the cover to the outside of the area covered by the cover. Alternatively, the cover can have sidewalls and a top plate opposite the surface, separated by the sidewalls. The first electric field line and the second electric field line extend from the first electrode and the second electrode toward the top plate and are led out through the top plate to the outside of the area covered by the cover. In such a configuration, the first sensor line and the second sensor line can be led out to the side opposite to the first electric field line and the second electric field line. This allows for more effective suppression of radiated noise propagating from the first electric field line and the second electric field line to the first sensor line and the second sensor line.

[0035] One aspect of this disclosure relates to a power conversion device comprising: a power conversion unit having any of the aforementioned power semiconductor modules, capable of converting a first form of power supplied by a power source into a second form of power required by a load device; and a control unit that sends control signals to the power semiconductor modules based on detection signals from sensor elements. This power conversion device includes any of the aforementioned power semiconductor modules. Therefore, the power conversion device can control the power conversion unit based on detection signals from sensor elements that suppress the effects of radiated noise.

[0036] The power semiconductor module and power conversion device of this disclosure will now be described in detail with reference to the accompanying drawings. In the description of the drawings, the same reference numerals are used to denote the same devices, and repeated descriptions are omitted.

[0037] Figure 1 The power conversion device 1 shown converts the power received from the power source B into the power required by the load device M. The power source B, for example, outputs direct current (DC) power. The power source B has a positive terminal B1 and a negative terminal B2. The load device M is, for example, a three-phase AC motor. The three-phase AC motor can be used as a power source to rotate the impeller. The power conversion device 1 can also be used as an electrical component such as an electric compressor or an electric blower. An electric compressor can also be mounted on a mobile body such as a vehicle.

[0038] The power conversion device 1 of this embodiment converts direct current (DC) power into alternating current (AC) power. That is, in this embodiment, DC power is exemplified as a first form of power, and AC power is exemplified as a second form of power. The power conversion device 1 can be an inverter in the narrow sense. The power conversion device 1 can also convert AC power to DC power. That is, the power conversion device 1 can also be a converter. The power conversion device 1 can also convert DC power of the first form into DC power of the second form.

[0039] The power conversion device 1 has a positive terminal A1 and a negative terminal A2 as input terminals. The positive terminal A1 is connected to the positive terminal B1 of the power supply. The negative terminal A2 is connected to the negative terminal B2 of the power supply. The power conversion device 1 also has output terminals D1, D2, and D3 as output terminals. These output terminals D1, D2, and D3 are connected to the load device M. For example, output terminals D1, D2, and D3 correspond to the U-phase, V-phase, and W-phase of a three-phase AC motor, respectively.

[0040] The power conversion device 1 includes a capacitor C and a switching circuit 2 (power conversion section) as electrical components. The capacitor C is connected between the power source B and the load device M. The capacitor C is, for example, a DC capacitor. The positive terminal C1 of the capacitor C is connected to the positive terminal B1 of the power source. The negative terminal C2 of the capacitor C is connected to the negative terminal B2 of the power source. The switching circuit 2 is connected between the capacitor C and the load device M. The switching circuit 2 converts DC power into pseudo-AC power. The switching circuit 2 includes power semiconductor elements 10A to 10F acting as switches and connection points P1 to P9.

[0041] Connection points P1, P4, and P7 are connected to the positive terminal C1 of capacitor C. Connection points P3, P6, and P9 are connected to the negative terminal C2 of capacitor C. Connection points P2, P5, and P8 are connected to output terminals D1, D2, and D3, respectively. Power semiconductor element 10A is connected to connection points P1 and P2. Power semiconductor element 10B is connected to connection points P2 and P3. Connection points P1, P2, and P3, along with power semiconductor elements 10A and 10B, constitute the first branch. Similarly, connection points P4, P5, and P6, along with power semiconductor elements 10C and 10D, constitute the second branch. Connection points P7, P8, and P9, along with power semiconductor elements 10E and 10F, constitute the third branch.

[0042] Power semiconductor devices 10A to 10F are, for example, semiconductor switches such as MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) or IGBTs (Insulated Gate Bipolar Transistors). Power semiconductor devices 10A to 10F are electrically connected to the control board 3 (control unit). Power semiconductor devices 10A to 10F respond to the control signal E1 (see reference) output from the control board 3. Figure 6 Switching between on and off. The control board 3 is, for example, a computer including a CPU, ROM, and RAM. Hereinafter, without distinguishing between power semiconductor elements 10A to 10F, each power semiconductor element 10A to 10F will be simply referred to as "power semiconductor element 10".

[0043] like Figure 2 As shown, the power semiconductor element 10 is housed inside the housing 20. The power semiconductor element 10 and the housing 20 constitute the power semiconductor module 5. In this embodiment, it is illustrated that all six power semiconductor elements 10A to 10F are housed in one housing 20. However, for example, it is also possible to house one power semiconductor element in each of the six housings (i.e., to house one power semiconductor element in one housing), or to house two power semiconductor elements in each of the three housings (i.e., to house two power semiconductor elements in one housing), or other methods.

[0044] Additionally, a shunt resistor (sensor element) 50 for current measurement is provided in the power semiconductor module 5. The shunt resistor 50 is housed inside the housing 20. The shunt resistor 50 serves as a current sensor for detecting the current output from the power conversion device 1. The shunt resistor 50 is electrically connected in series with the middle portion of the second electric field line 42 connected to the source electrode 12 of the power semiconductor element 10. The shunt resistor 50 is positioned relative to the second electric field line 42 of the power semiconductor element 10 to enable the detection of the current output from the power conversion device 1.

[0045] like Figure 2As shown, the housing 20 includes: a heat sink 21 on which the power semiconductor element 10 and the shunt resistor 50 are disposed; and a cover 22 covering the power semiconductor element 10 and the shunt resistor 50. The heat sink 21 is a plate-shaped component comprising a material with thermal conductivity capable of dissipating heat from the power semiconductor element 10 and the shunt resistor 50. The material with thermal conductivity capable of dissipating heat from the power semiconductor element 10 and the shunt resistor 50 can be a material with low thermal resistance, capable of transferring heat from the power semiconductor element 10 and the shunt resistor 50 to other constituent devices. The heat sink 21 is, for example, a metal plate made of a metallic material such as copper.

[0046] Such metallic materials possess electrical conductivity (conductivity) capable of shielding radiated noise. Therefore, the heat sink 21 also functions as a shielding plate for radiated noise. Radiated noise is electromagnetic noise generated by alternating electric and magnetic fields that propagate through space, for example, accompanying the switching operation of the power semiconductor element 10. The ability of the heat sink 21 to shield radiated noise means that the heat sink 21 has the function of preventing or suppressing the passage of radiated noise through the heat sink 21. Thus, the heat sink 21 possesses both thermal conductivity for dissipating heat from the power semiconductor element 10 and the shunt resistor 50, and electrical conductivity for shielding radiated noise. Thus, the heat sink 21 constitutes a shielding layer capable of shielding radiated noise as a whole. However, the heat sink 21 need not be entirely composed of a shielding layer. The heat sink 21 may also have a structure in which a shielding layer is included in a portion. The shielding layer may also be constructed from a thin plate, mesh, or other known shielding structure made of a material that shields radiated noise. For example, the heat sink 21 may also have a structure in which a metal layer is stacked on an electrically insulating layer as a shielding layer (plating). That is, the heat sink 21 may also have an insulating layer and a metal layer (shielding layer) stacked on the insulating layer. Furthermore, in addition to conductive materials, magnetic materials can also be used as materials capable of shielding radiated noise. Therefore, the heat sink 21 may be made of a magnetic material instead of a conductive material, or it may be made of a material that contains both conductive and magnetic properties. Even with such a structure, the heat sink 21 can shield radiated noise.

[0047] The heat sink 21 includes a surface 21a on which the power semiconductor element 10 and the shunt resistor 50 are disposed, a back surface 21b opposite to the surface 21a, and a through hole 21c extending from the surface 21a to the back surface 21b. The surface 21a and the back surface 21b can be, for example, mutually parallel planes. Regarding the power semiconductor element 10 being disposed on the surface 21a, in addition to the case where the power semiconductor element 10 is directly fixed to the surface 21a, there is also the case where the power semiconductor element 10 is indirectly fixed to the surface 21a via other components. In this embodiment, the power semiconductor element 10 is indirectly fixed to the surface 21a via an insulating layer 31 and a conductive layer 32. Regarding the shunt resistor 50 being disposed on the surface 21a, in addition to the case where the shunt resistor 50 is directly fixed to the surface 21a, there is also the case where the shunt resistor 50 is indirectly fixed to the surface 21a via other components. In this embodiment, the shunt resistor 50 is indirectly fixed to the surface 21a via an insulating layer 31. Hereinafter, the direction from surface 21a toward back surface 21b will be referred to as "down", and the direction from back surface 21b toward surface 21a will be referred to as "up". In addition, the view of surface 21a of heat sink 21 from above will be referred to as "top view".

[0048] The insulating layer 31 is, for example, a flat ceramic layer with high thermal conductivity. The insulating layer 31 includes a back surface 31b opposite to the back surface 21a and a surface 31a opposite to the back surface 21b. The conductive layer 32 is, for example, a flat copper plate, and is disposed on the surface 31a of the insulating layer 31. Conductive layers 33 and 34 are disposed on both sides of the surface 31a, separated by a shunt resistor 50 and the conductive layer 32. The conductive layers 33 and 34 can each be, for example, flat copper plates. The conductive layers 33 and 34 are separate from the conductive layer 32, thereby being electrically insulated from it. Alternatively, the conductive layer 34 can be integrated with the conductive layer 32 without being separated from it. In this case, the wire 41a used to connect the conductive layers 32 and 34 can be omitted.

[0049] Through holes 21c, 31c, 21d, 31d, and 21e, 31e are formed in the heat sink 21 and the insulating layer 31, respectively. For example, the through holes 31c, 31d, and 31e extend the insulating layer 31 from the surface 31a exposed between the conductive layer 32 and the conductive layer 33 to the back surface 31b. The through holes 21c, 21d, and 21e extend the heat sink 21 from the surface 21a to the back surface 21b at positions vertically connected to the through holes 31c, 31d, and 31e, respectively. The through holes 21c and 31c are sized to allow simultaneous insertion of the first control line portion 43 and the second control line portion 44, described later. In this disclosure, the through holes 21c and 31c constitute a single interconnected through hole; therefore, the through holes 21c and 31c are sometimes collectively referred to as "through hole H10". Similarly, through holes 21d and 31d are sometimes collectively referred to as "first through hole H20", and through holes 21e and 31e are collectively referred to as "second through hole H30".

[0050] The power semiconductor element 10 has a drain electrode 11 (first electrode), a source electrode 12 (second electrode), and a gate electrode 13 (control electrode) that are electrically insulated from each other. The source electrode 12 and the gate electrode 13 are located, for example, on the side opposite to the drain electrode 11 in the power semiconductor element 10. The arrangement of the source electrode 12, the gate electrode 13, and the drain electrode 11 is not limited to this structure and can be appropriately modified. In this embodiment, the power semiconductor element 10 is disposed on the conductive layer 32 with the drain electrode 11 facing the surface 21a of the heat sink 21. The situation where the drain electrode 11 faces the surface 21a includes not only the case where the drain electrode 11 is directly facing the surface 21a, but also the case where the drain electrode 11 faces the surface 21a via other components. In this embodiment, the drain electrode 11 faces the surface 21a via the conductive layer 32 and the insulating layer 31.

[0051] The gate electrode 13 and source electrode 12 are located on the opposite side of the surface 21a of the heat sink 21, separated from the drain electrode 11. Therefore, in this embodiment, the power semiconductor element 10 is disposed on the conductive layer 32 with the gate electrode 13 and source electrode 12 facing upwards. The gate electrode 13 and source electrode 12 are electrically connected to the control substrate 3 and are input with a control signal E1 output from the control substrate 3. The control signal E1 is a signal representing the gate voltage (or gate current) used to control the switching of conduction and insulation between the drain electrode 11 and the source electrode 12. The gate voltage represents the potential difference of the gate electrode 13 relative to the potential of the source electrode 12.

[0052] The cover 22 is disposed on the surface 21a of the heat sink 21 to cover the power semiconductor element 10 and the shunt resistor 50. The cover 22 serves, for example, to protect the power semiconductor element 10 from external moisture and dirt. The cover 22 is made, for example, of an electrically insulating resin material. The cover 22 has a top plate 22a and a side plate 22b (sidewall portion). The top plate 22a is a plate component that is vertically opposed to the surface 21a of the heat sink 21, with the power semiconductor element 10 and the shunt resistor 50 in between. The side plate 22b is a frame-shaped plate component that vertically connects the top plate 22a to the surface 21a and surrounds the power semiconductor element 10 and the shunt resistor 50. The cover 22 is mounted on the surface 21a of the heat sink 21 to cover the power semiconductor element 10 and the shunt resistor 50.

[0053] The power semiconductor module 5 further includes: a first power line section 41 electrically connected to the drain electrode 11; a second power line section 42 electrically connected to the source electrode 12; a first control line section 43 electrically connected to the gate electrode 13; and a second control line section 44 electrically connected to the source electrode 12. In this specification, "electrical connection" between a device and other devices means that the two devices are connected in a manner that enables signal transmission and power supply between them. Therefore, "electrical connection" includes both the case where two devices are directly connected to each other via wiring and the case where two devices are indirectly connected via other electrical components.

[0054] The first power line section 41 and the second power line section 42 constitute a main circuit for supplying power from the drain electrode 11 to the source electrode 12. The first power line section 41 and the second power line section 42 are each composed of one or more electrical conductors capable of transmitting power from the drain electrode 11 to the source electrode 12. The electrical conductors constituting the first power line section 41 and the second power line section 42 may be conductors such as wiring, wires, cables, or lead terminals. The first power line section 41 and the second power line section 42 extend upwards from the drain electrode 11 and the source electrode 12 toward the top plate 22a, and are led out through the top plate 22a from the area covered by the cover 22 in region R1 to the area outside that region. That is, the first power line section 41 and the second power line section 42 are led outwards from the inside of the housing 20 via the upper top plate 22a. More specifically, the first power line section 41 and the second power line section 42 are led outwards from the top plate 22a through through holes H1 and H2 formed in the top plate 22a.

[0055] The first power line section 41 is configured to include, for example, a wire 41a and a lead terminal 41b. The wire 41a connects the drain electrode 11 to the conductive layer 34. The base of the lead terminal 41b is connected to the conductive layer 34. The front end of the lead terminal 41b is led out to the outside of the cover 22 through a through hole H1 in the top plate 22a. The lead terminal 41b is electrically connected to the drain electrode 11 via the conductive layer 34 and the wire 41a. Therefore, the power applied to the lead terminal 41b is input to the drain electrode 11 via the conductive layer 34 and the wire 41a.

[0056] A shunt resistor 50 is electrically connected in series at the midpoint of the second power line section 42. Here, the shunt resistor 50 has a first terminal 50a and a second terminal 50b. The first terminal 50a and the second terminal 50b are electrically connected to each other through an electrical conductor having a predetermined resistance value. The second power line section 42 is configured to include, for example, wires 42a and 42b, and a lead terminal 42c. Wire 42a connects the source electrode 12 to the first terminal 50a of the shunt resistor 50. Wire 42b connects the second terminal 50b of the shunt resistor 50 to the conductive layer 33. The base of the lead terminal 42c is connected to the conductive layer 33. The front end of the lead terminal 42c is led out to the outside of the cover 22 through a through hole H2 in the top plate 22a. The lead terminal 42c is electrically connected to the source electrode 12 via the conductive layer 33, wire 42b, shunt resistor 50, and wire 42a. Therefore, the power output from the source electrode 12 is transmitted to the lead terminal 42c via the wire 42a, the shunt resistor 50, the wire 42b, and the conductive layer 33.

[0057] The first control line portion 43 and the second control line portion 44 constitute a control circuit for providing a control signal E1 to the gate electrode 13. The first control line portion 43 and the second control line portion 44 are each composed of one or more electrical conductors capable of transmitting the gate voltage represented by the control signal E1 to the gate electrode 13. The electrical conductors constituting the first control line portion 43 and the second control line portion 44 can be conductors such as wiring, wires, cables, or lead terminals. The first control line portion 43 and the second control line portion 44 are led out from the inside of the housing 20 through a through hole H10 in the lower heat sink 21 to the outside of the housing 20.

[0058] like Figure 2 and Figure 3 As shown, the through hole H10 through which the first control line portion 43 and the second control line portion 44 pass is formed at a position that does not overlap with the gate electrode 13 and the source electrode 12 when viewed from above, and more specifically, at a position away from the gate electrode 13 and the source electrode 12.

[0059] like Figure 2As shown, the first control line portion 43 is configured to include, for example, a wire 43a and a connection terminal 43b. The wire 43a is connected to the gate electrode 13. The wire 43a extends downward from the gate electrode 13 and is led out through the through hole H10 to region R2 on the back surface 21b of the heat sink 21. That is, the wire 43a is led out from the inside of the housing 20 through the heat sink 21 to the outside of the housing 20. The wire 43a led out to the bottom of the heat sink 21 is connected to the control board 3 via the connection terminal 43b.

[0060] The second control line portion 44 is configured to include, for example, a wire 44a and a connection terminal 44b. The wire 44a is connected to the source electrode 12 at a location different from the connection point of the wire 42a relative to the source electrode 12 (see reference). Figure 3 Wire 44a extends downward from the source electrode 12 and, together with wire 44a of the first control line portion 43, is led out through the through hole H10 to region R2 on the back surface 21b of the heat sink 21. That is, wire 44a and wire 43a are led out from the inside of the housing 20 to the outside of the housing 20 via the heat sink 21. Wire 44a led out to the bottom of the heat sink 21 is connected to the control board 3 via connection terminal 44b. A reference potential of control signal E1 is applied to the second control line portion 44. The reference potential is any arbitrarily determined reference potential and is not limited to zero V. The gate voltage represented by control signal E1 is expressed as the difference between the potential of the first control line portion 43 and the reference potential of the second control line portion 44.

[0061] If a control signal E1 is input to the gate electrode 13 via the first control line section 43 and the second control line section 44, the timing of turning the power semiconductor element 10 on or off is controlled. When the gate voltage represented by the control signal E1 is above the threshold voltage (e.g., 5V), the power semiconductor element 10 is turned on, and the drain electrode 11 and the source electrode 12 become conductive. At this time, a large power, such as several thousand A or several thousand V, is applied to the drain electrode 11 and the source electrode 12 via the first power line section 41 and the second power line section 42. On the other hand, when the gate voltage is below the threshold voltage, the power semiconductor element 10 is turned off, and the drain electrode 11 and the source electrode 12 become insulated. In this way, the conduction and insulation (non-conduction) between the drain electrode 11 and the source electrode 12 are switched according to the control signal E1, thereby switching the power mode using the power conversion device 1.

[0062] The power semiconductor module 5 also includes a first sensor line portion 51 and a second sensor line portion 52, which are electrically connected to the shunt resistor 50, respectively. The first sensor line portion 51 and the second sensor line portion 52 are each composed of an electrical conductor capable of transmitting the detection signal from the shunt resistor 50 to the control board 3. In this embodiment, the detection signal of the shunt resistor 50 refers to the voltage between the first terminal 50a and the second terminal 50b of the shunt resistor 50. The control board 3 can, for example, switch the conduction and insulation between the drain electrode 11 and the source electrode 12 based on the detection signal from the shunt resistor 50. The electrical conductors constituting the first sensor line portion 51 and the second sensor line portion 52 can be conductors such as wiring, wires, cables, or lead terminals. The first sensor line portion 51 and the second sensor line portion 52 are led out from the inside of the housing 20 through the first through hole H20 and the second through hole H30 of the heat sink 21 below, respectively, to the outside of the housing 20.

[0063] The first sensor wire portion 51 is configured to include, for example, a wire 51a and a connection terminal 51b. The wire 51a is connected to the first terminal 50a of the shunt resistor 50. The wire 51a extends downward from the first terminal 50a and is led out through the first through hole H20 to region R2 on the back surface 21b of the heat sink 21. The wire 51a leading out to the bottom of the heat sink 21 is connected to the control board 3 via the connection terminal 51b. The second sensor wire portion 52 is configured to include, for example, a wire 52a and a connection terminal 52b. The wire 52a is connected to the second terminal 50b of the shunt resistor 50. The wire 52a extends downward from the second terminal 50b and is led out through the second through hole H30 to region R2 on the back surface 21b of the heat sink 21. The wire 52a leading out to the bottom of the heat sink 21 is connected to the control board 3 via the connection terminal 52b.

[0064] In this embodiment, the first power line portion 41 and the second power line portion 42 are led out to the outside of the housing 20 through the upper cover 22. On the other hand, the first sensor line portion 51 and the second sensor line portion 52 are led out to the outside of the housing 20 through the lower heat sink 21. In other words, only the first sensor line portion 51 and the second sensor line portion 52 are led out to region R2 on the back surface 21b of the heat sink 21 through the first through hole H20 and the second through hole H30, respectively. As a result, region R1, where the first power line portion 41 and the second power line portion 42 are led out, and region R2, where the first sensor line portion 51 and the second sensor line portion 52 are led out, are separated by the heat sink 21. Region R1 may also be the region opposite to surface 21a of a pair of regions located on both sides of the heat sink 21. Region R2 may also be the region opposite to the back surface 21b of this pair of regions.

[0065] Therefore, the first sensor line portion 51 and the second sensor line portion 52 are led out to the side opposite to the first power line portion 41 and the second power line portion 42, separated by the heat sink 21. As a result, at least the front end portion of each of the first sensor line portion 51 and the second sensor line portion 52 is disposed in region R2 on the back surface 21b, and at least the front end portion of each of the first power line portion 41 and the second power line portion 42 is disposed in region R1. The front end of the first power line portion 41 refers to the end opposite to the base end of the first power line portion 41 connected to the drain electrode 11. The front end of the second power line portion 42 refers to the end opposite to the base end of the second power line portion 42 connected to the source electrode 12. The front end of the first sensor line portion 51 refers to the end opposite to the base end of the first sensor line portion 51 connected to the first terminal 50a. The front end of the second sensor line portion 52 refers to the end opposite to the base end of the second sensor line portion 52 connected to the second terminal 50b.

[0066] like Figure 2 and Figure 4 As shown, the first through hole H20 for the first sensor wire portion 51 to pass through is formed at a position that does not overlap with the first electric field line portion 41 and the second electric field line portion 42 when viewed from above, and more specifically, it is formed at a position away from the first electric field line portion 41 and the second electric field line portion 42. The second through hole H30 for the second sensor wire portion 52 to pass through is formed at a position that does not overlap with the first electric field line portion 41 and the second electric field line portion 42 when viewed from above, and more specifically, it is formed at a position away from the first electric field line portion 41 and the second electric field line portion 42.

[0067] Furthermore, the first through hole H20 is positioned closer to the first terminal 50a than the second through hole H30 when viewed from above. The second through hole H30 is positioned closer to the second terminal 50b than the first through hole H20 when viewed from above.

[0068] Hereinafter, the effects of the power semiconductor module 5 and the power conversion device 1 of this embodiment will be explained together with the problems of the comparative examples.

[0069] exist Figure 5 In the diagram, the power semiconductor element 110 is simplified as shown in the circuit diagram. Figure 5This is a simplified cross-sectional view of a power semiconductor module 105, representing a comparative example. The power semiconductor module 105 includes: a housing 120 having a heat sink 121 and a cover 122; a power semiconductor element 110 disposed on the surface 121a of the heat sink 121; a first power line portion 141 connected to the drain electrode 111; a second power line portion 142 connected to the source electrode 112; a first control line portion 143 connected to the gate electrode 113; and a second control line portion 144 connected to the source electrode 112. In the power semiconductor module 105, a control signal E1 is input to the gate electrode 113 via the first control line portion 143 and the second control line portion 144. Based on the control signal E1, the conduction and insulation between the drain electrode 111 and the source electrode 112 are alternately switched. The first power line section 141, the second power line section 142, the first control line section 143, and the second control line section 144 are all led out to the outside of the housing 120 through the upper cover 122.

[0070] In addition, the power semiconductor module 105 also includes: a shunt resistor 150, electrically connected in series with the middle portion of the second power line portion 142; a first sensor line portion 151, connected to the first terminal 150a of the shunt resistor 150; and a second sensor line portion 152, connected to the second terminal 150b of the shunt resistor 150. The first sensor line portion 151 and the second sensor line portion 152, together with the first power line portion 141 and the second power line portion 142, are led out to the outside of the housing 120 through the upper cover 122.

[0071] As with the power semiconductor module 105, when the first power line section 141, the second power line section 142, the first sensor line section 151, and the second sensor line section 152 all extend in the same direction, the large radiated noise N radiated from the first power line section 141 and the second power line section 142, which are subjected to a large power E2, may easily propagate to the first sensor line section 151 and the second sensor line section 152. The radiated noise N is an electromagnetic wave and therefore has the property of traveling in a straight line. Therefore, the radiated noise N radiated from the first power line section 141 and the second power line section 142 easily propagates to the first sensor line section 151 and the second sensor line section 152, which extend upwards together with the first power line section 141 and the second power line section 142. The radiated noise N propagating to the first sensor line section 151 and the second sensor line section 152 becomes a significant factor contributing to the noise that causes fluctuations in the detection signal of the shunt resistor 150.

[0072] A large electrical current E2, such as several thousand volts or several thousand amperes, is applied to the first electric field section 141 and the second electric field section 142. Therefore, there is a tendency for large radiated noise N to radiate from the first electric field section 141 and the second electric field section 142. On the other hand, for the shunt resistor 150, from the viewpoint of suppressing heat generation, a shunt resistor with a small resistance value is used. The voltage (potential difference) between the first terminal 150a and the second terminal 150b of the shunt resistor 150 is very small compared to the electrical current E2 applied to the first electric field section 141 and the second electric field section 142. Therefore, if the large radiated noise N radiated from the first electric field section 141 and the second electric field section 142 propagates to the first sensor line section 151 and the second sensor line section 152, the detection signal of the shunt resistor 150 becomes significantly turbulent. Consequently, it is impossible to accurately detect the current output from the power semiconductor module 105 using the shunt resistor 150.

[0073] On the other hand, in the power semiconductor module 5 involved in this embodiment, such as Figure 6 As shown, the first sensor line portion 51 and the second sensor line portion 52 are led out to the lower position opposite to the first power line portion 41 and the second power line portion 42. Furthermore, Figure 6 This is a simplified cross-sectional view of the power semiconductor module 5 involved in this embodiment, and the power semiconductor element 10 is simplified as a circuit diagram. Figure 6 As shown, the first sensor line 51 and the second sensor line 52 are led out to a region R2 on the opposite side of the region R1 from which the first electric field line 41 and the second electric field line 42 are led out, separated by a heat sink 21 which acts as a shielding plate to block radiated noise N. Thus, the large radiated noise N radiated from the first electric field line 41 and the second electric field line 42 is shielded by the heat sink 21 and does not propagate to the first sensor line 51 and the second sensor line 52.

[0074] Specifically, the radiated noise N emitted from the first electric field line section 41 and the second electric field line section 42 inside the housing 20 is shielded by the heat sink 21, and therefore will not propagate to the first sensor line section 51 and the second sensor line section 52 on the back surface 21b of the heat sink 21. Furthermore, the first sensor line section 51 and the second sensor line section 52 are not positioned in the direction in which the radiated noise N emitted from the first electric field line section 41 and the second electric field line section 42 propagates outside the housing 20. Therefore, such radiated noise N will also not propagate to the first sensor line section 51 and the second sensor line section 52. Thus, the first sensor line section 51 and the second sensor line section 52 are led out via the heat sink 21 to the side opposite to the first electric field line section 41 and the second electric field line section 42, and the heat sink 21 acts as a shielding plate, thereby suppressing the propagation of large radiated noise N emitted from the first electric field line section 41 and the second electric field line section 42 to the first sensor line section 51 and the second sensor line section 52. Therefore, the power semiconductor module 5 can suppress the influence of radiated noise N on the detection signal of the shunt resistor 50.

[0075] As described above, a large power is applied to the drain electrode 11 and source electrode 12 in the conduction state. On the other hand, for the shunt resistor 50 used to detect the output current of the power semiconductor module 5, a shunt resistor with a small resistance value is used to suppress heat generation. As a result, the voltage across the shunt resistor 50, which should be measured to detect the output current of the power semiconductor module 5, is extremely low compared to the high voltage applied to the power semiconductor element 10. As an example, the power handled by the power semiconductor element 10 is a large power such as hundreds of A or hundreds of V, while the power handled by the shunt resistor 50 is about one-thousandth of the power handled by the power semiconductor element 10. Thus, the number of digits of the power values ​​handled by the power semiconductor element 10 and the shunt resistor 50 are very different. As a result, the detection signal of the shunt resistor 50 is weak, and therefore the detection signal of the shunt resistor 50 is easily affected by radiated noise N. In the power semiconductor module 5 according to this embodiment, even when using such a shunt resistor 50, it is possible to suppress the influence of radiated noise N on the detection signal of the shunt resistor 50 (the voltage value across the shunt resistor). Therefore, in the power semiconductor module 5, the output current can be measured more accurately using the shunt resistor 50.

[0076] As in this embodiment, the shunt resistor 50 can also be configured such that it is disposed on the surface 21a of the heat sink 21, and the heat sink 21 can dissipate heat from the shunt resistor 50. If current flows in the shunt resistor 50, the shunt resistor 50 will generate heat. Even in this case, the power semiconductor module 5 can use the heat sink 21 to dissipate heat from the heated shunt resistor 50 and shield radiated noise N.

[0077] As in this embodiment, the first through-hole H20 and the second through-hole H30 can also be formed at positions that do not overlap with the first electric field line portion 41 and the second electric field line portion 42 when viewed from above. In this case, the power semiconductor module 5 can suppress the radiated noise N radiated from the first electric field line portion 41 and the second electric field line portion 42 from propagating to the back surface 21b of the heat sink 21 through the first through-hole H20 and the second through-hole H30.

[0078] As in this embodiment, the first power line portion 41 and the second power line portion 42 can also be led out to the region on the back surface 21b of the heat sink 21 through the first through hole H20 and the second through hole H30 formed at different locations. In this case, the first through hole H20 can be formed near the first terminal 50a of the shunt resistor 50. In addition, the second through hole H30 can be formed near the second terminal 50b of the shunt resistor 50. As a result, the first sensor line portion 51 and the second sensor line portion 52 can reach the first through hole H20 and the second through hole H30 respectively with the shortest distance. In this way, the portion of the first sensor line portion 51 and the second sensor line portion 52 exposed inside the housing 20 that can propagate radiated noise N can be minimized, thus reducing the risk of radiated noise N propagating to the first sensor line portion 51 and the second sensor line portion 52 inside the housing 20.

[0079] As in this embodiment, the first electric field line portion 41 and the second electric field line portion 42 can also extend from the source electrode 12 and the gate electrode 13 toward the top plate 22a of the cover 22, and be led out to the outside of the area covered by the cover 22 via the top plate 22a. In such a structure, the first sensor line portion 51 and the second sensor line portion 52 can be led out to the side opposite to the first electric field line portion 41 and the second electric field line portion 42, thus more effectively suppressing the propagation of radiated noise N from the first electric field line portion 41 and the second electric field line portion 42 to the first sensor line portion 51 and the second sensor line portion 52.

[0080] The above describes one embodiment of the present disclosure, but the present disclosure is not limited to the above embodiment.

[0081] <Variation Example 1>

[0082] Figure 7 This is a cross-sectional view showing the power semiconductor module 5A of Modified Example 1. In the above embodiment, a first through-hole H20 and a second through-hole H30 are formed in the heat sink 21, while in Modified Example 1, a through-hole H40 is formed in the heat sink 21A. Figure 7 and Figure 8As shown, the through-hole H40 is formed at a position that does not overlap with the first electric field line portion 41 and the second electric field line portion 42 when viewed from above, and more specifically, at a position away from the first electric field line portion 41 and the second electric field line portion 42. The through-hole H40 can be provided near the shunt resistor 50 when viewed from above. The second sensor line portion 52 and the second sensor line portion 52 are led out to the region R2 on the back surface 21b of the heat sink 21A through a through-hole H40.

[0083] Thus, in the power semiconductor module 5A, the first sensor line portion 51 and the second sensor line portion 52 pass through a through hole H40, thereby reducing the distance between them and consequently decreasing the area of ​​the loop formed by them. This smaller loop area reduces the electromotive force generated when electromagnetic waves (radiated noise N) interact with the loop. Therefore, the power semiconductor module 5A can reduce the risk of large conducted noise generated in the first sensor line portion 51 and the second sensor line portion 52.

[0084] <Variation Example 2>

[0085] Figure 9 This is a simplified cross-sectional view of the power semiconductor module 5B in Modified Example 2. (See attached image.) Figure 9 As shown, in the power semiconductor module 5B, the first sensor wire 51 and the second sensor wire 52 are twisted together. In the twisted state, the first sensor wire 51 and the second sensor wire 52 are led out from the inside of the housing 20 through the through hole H40 to the region R2 on the back side 21b of the heat sink 21A.

[0086] In this way, the first sensor wire 51 and the second sensor wire 52 are twisted. In this case, even if the radiated noise N from the first power line 41 and the second power line 42 propagates to the first sensor wire 51 and the second sensor wire 52, the conducted noise generated in the first sensor wire 51 and the second sensor wire 52 cancels out the conducted noise generated by the twisted portion in front of them. Therefore, the power semiconductor module 5B can reduce the risk of large conducted noise being generated in the first sensor wire 51 and the second sensor wire 52.

[0087] <Variation Example 3>

[0088] Figure 10 This is a simplified cross-sectional view of the power semiconductor module 5C in variant example 3. (See diagram below.) Figure 10 and Figure 11As shown, in the power semiconductor module 5C, the through-hole H50 is formed at a position that overlaps with the shunt resistor 50 when viewed from above. Furthermore, the through-hole H50 is formed at a position that does not overlap with the first electric field line portion 41 and the second electric field line portion 42 when viewed from above. The first sensor line portion 51 is connected to the first terminal 50a on the lower surface of the shunt resistor 50 (the surface opposite to the surface 21a of the heat sink 21C). The second sensor line portion 52 is connected to the second terminal 50b on the lower surface of the shunt resistor 50. The first sensor line portion 51 and the second sensor line portion 52 are led out from the inside of the housing 20 through the through-hole H50 to region R2 on the back surface 21b of the heat sink 21C. In the power semiconductor module 5C, when the shunt resistor 50 is viewed from above, the first sensor line portion 51, the second sensor line portion 52, and the through-hole H50 are covered by the shunt resistor 50.

[0089] In this configuration, the power semiconductor module 5C enables the first sensor line 51 and the second sensor line 52 to reach the through-hole H50 from the lower surface of the shunt resistor 50 with the shortest possible distance. This minimizes the portion of the first sensor line 51 and the second sensor line 52 exposed inside the housing 20 that could propagate radiated noise N, thus reducing the risk of radiated noise N propagating to the first sensor line 51 and the second sensor line 52 inside the housing 20. Furthermore, since the first sensor line 51 and the second sensor line 52 are covered by the shunt resistor 50, the risk of radiated noise N propagating to the first sensor line 51 and the second sensor line 52 is further reduced.

[0090] <Variation Example 4>

[0091] Figure 12 This is a simplified cross-sectional view of the power semiconductor module 5D in variant example 4. (See diagram below.) Figure 12As shown, the power semiconductor module 5D of Modified Example 5 includes a first magnetic shield 61 (magnetic shield) and a second magnetic shield 62 (magnetic shield) that respectively surround the first sensor wire portion 51 and the second sensor wire portion 52 inside the housing 20. The first magnetic shield 61 is a cylindrical component extending between the end of the first sensor wire portion 51 connected to the shunt resistor 50 and the opening of the first through hole H20 on the surface 21a of the housing 20. The first magnetic shield 61 is configured to surround the first sensor wire portion 51 inside the housing 20. The first sensor wire portion 51 is led out from the first through hole H20 through the interior of the first magnetic shield 61 to a region R2 on the back surface 21b of the heat sink 21. The second magnetic shield 62 is a cylindrical component extending between the end of the second sensor wire portion 52 connected to the shunt resistor 50 and the opening of the second through hole H30 on the surface 21a of the housing 20. The second magnetic shield 62 is configured to surround the second sensor wire portion 52 inside the housing 20. The second sensor line 52 is led out from the second through hole H30 through the interior of the second magnetic shield 62 to the region R2 on the back side 21b of the heat sink 21.

[0092] The first magnetic shielding member 61 and the second magnetic shielding member 62 are each configured to include a shielding layer capable of shielding radiated noise N radiated from the first electric field line portion 41 and the second electric field line portion 42. The first magnetic shielding member 61 and the second magnetic shielding member 62 may be entirely composed of the shielding layer, or they may be configured to include the shielding layer as a part of themselves. In addition to conductive materials, magnetic materials can also be used as shielding layers capable of shielding radiated noise N. Therefore, the shielding layers constituting the first magnetic shielding member 61 and the second magnetic shielding member 62 may be made of a magnetic material instead of a conductive material, or they may be made of a material that combines both conductivity and magnetism. The first magnetic shielding member 61 and the second magnetic shielding member 62 may, for example, be conductive tubes made of aluminum or copper. The first magnetic shielding member 61 and the second magnetic shielding member 62 may, for example, be conductive films such as aluminum foil or copper foil, or conductive tubular mesh woven with aluminum or copper wire.

[0093] According to this structure, the radiated noise N radiated from the first electric field line portion 41 and the second electric field line portion 42 is shielded by the first magnetic shield 61 and the second magnetic shield 62. Therefore, the power semiconductor module 5D can suppress the propagation of the radiated noise N into the first sensor line portion 51 inside the first magnetic shield 61 and the second sensor line portion 52 inside the second magnetic shield 62.

[0094] Furthermore, regarding the aforementioned variations, magnetic shielding members may also be provided inside the housing 20 to respectively surround the first sensor line portion 51 and the second sensor line portion 52, or magnetic shielding members that surround both the first sensor line portion 51 and the second sensor line portion 52.

[0095] <Variation Example 5>

[0096] Figure 13 This is a cross-sectional view of the power semiconductor module 5E in Modified Example 5. Figure 13 As shown, in the power semiconductor module 5E, the first sensor line 51 and the second sensor line 52 include a common-mode filter 70 capable of removing the common-mode component of conducted noise transmitted in the first sensor line 51 and the second sensor line 52. Conducted noise is electromagnetic noise transmitted in conductors used for power input and output, and is generated by the switching operation of the power semiconductor element 10.

[0097] The common-mode filter 70 is disposed, for example, inside the through-hole H60 provided in the heat sink 21E. That is, the common-mode filter 70 is disposed between the surface 21a and the back surface 21b of the heat sink 21E and is embedded inside the heat sink 21E. The first sensor line portion 51 is configured to include a line L1 connecting the first terminal 50a and the common-mode filter 70 inside the housing 20, the common-mode filter 70 inside the heat sink 21E, and a connection terminal 51b connecting the common-mode filter 70 and the connection terminal 51b outside the housing 20 (see reference). Figure 2 The second sensor line 52 is configured to include line L2, which connects the second terminal 50b and the common-mode filter 70 inside the housing 20; the common-mode filter 70 inside the heat sink 21E; and line L3, which connects the common-mode filter 70 and the connection terminal 52b outside the housing 20 (see reference). Figure 2 Line L4.

[0098] In this power semiconductor module 5E, the common-mode component of conducted noise that may be generated in the first sensor line 51 and the second sensor line 52 can be removed, thereby suppressing the generation of fluctuations in the detection signal of the shunt resistor 50 caused by the common-mode component. Furthermore, by distributing the common-mode filter 70 inside the through-hole H60, the propagation of radiated noise N from the first power line 41 and the second power line 42 to the first sensor line 51 and the second sensor line 52 via the common-mode filter 70 can be suppressed.

[0099] Furthermore, the common-mode filter 70 does not need to be disposed inside the through-hole H60. For example, the common-mode filter 70 can be disposed on the surface 21a or on the back surface 21b. When the common-mode filter 70 is disposed on the surface 21a, the first sensor line portion 51 and the second sensor line portion 52 between the shunt resistor 50 and the common-mode filter 70 can also be twisted together. When the common-mode filter 70 is disposed on the surface 21a, the first sensor line portion 51 and the second sensor line portion 52 between the shunt resistor 50 and the common-mode filter 70, and the common-mode filter 70 on the surface 21a can also be surrounded by an electromagnetic shield. The power semiconductor module 5E can also have a ferrite core instead of the common-mode filter 70. In this case, the first sensor line portion 51 and the second sensor line portion 52 can also pass straight through the annular ferrite core. Alternatively, the first sensor line portion 51 and the second sensor line portion 52 can be wound around the annular ferrite core, which can also form a common-mode choke coil.

[0100] <Variation Example 6>

[0101] Figure 14 This is a cross-sectional view of the power semiconductor module 5F in Modified Example 6. (See attached image.) Figure 14 As shown, in the power semiconductor module 5F, the first sensor line portion 51 and the second sensor line portion 52 include a transformer 80 capable of removing the common-mode component of conducted noise conducted in the first sensor line portion 51 and the second sensor line portion 52. The transformer 80 is disposed, for example, inside a through-hole H60 provided in the heat sink 21E. That is, the transformer 80 is disposed between the surface 21a and the back surface 21b of the heat sink 21E and is embedded inside the heat sink 21E. The first sensor line portion 51 is configured to include a line L1 connecting the first terminal 50a and the transformer 80 inside the housing 20, the transformer 80 inside the heat sink 21E, and a connection terminal 51b connecting the transformer 80 and the connection terminal 51b outside the housing 20 (see reference). Figure 2 The second sensor line 52 is configured to include line L2, which connects the second terminal 50b and the transformer 80 inside the housing 20; the transformer 80 inside the heat sink 21E; and the transformer 80 and the connection terminal 52b outside the housing 20 (see reference). Figure 2 Line L4.

[0102] In this power semiconductor module 5F, the common-mode component of conducted noise that may be generated in the first sensor line 51 and the second sensor line 52 can be removed, thus suppressing the generation of fluctuations in the detection signal of the shunt resistor 50 caused by this common-mode component. Furthermore, the transformer 80 is disposed inside the through-hole H60, thus suppressing the propagation of radiated noise N from the first power line 41 and the second power line 42 to the first sensor line 51 and the second sensor line 52 via the transformer 80. Additionally, if the transformer 80 is disposed inside the heat sink 21E, it can also provide electrical insulation between the interior and exterior of the housing 20.

[0103] Furthermore, the transformer 80 does not need to be disposed inside the through hole H60. For example, the transformer 80 can be disposed on the surface 21a or on the back surface 21b. When the transformer 80 is disposed on the surface 21a, the first sensor wire portion 51 and the second sensor wire portion 52 between the shunt resistor 50 and the transformer 80 can also be twisted together. When the transformer 80 is disposed on the surface 21a, the first sensor wire portion 51 and the second sensor wire portion 52 between the shunt resistor 50 and the transformer 80, and the transformer 80 on the surface 21a can also be surrounded by an electromagnetic shielding member.

[0104] This disclosure is not limited to the examples described above, and various other modifications are possible. In the above embodiments and modifications, the first and second electric field lines are shown to extend from the top plate to the outside of the housing. However, the first and second electric field lines may also extend from the side plates. In the above embodiments and modifications, the heat sink for arranging the semiconductor element is shown to be flat. However, the shape of the heat sink is not limited to flat; it may be other shapes (e.g., U-shaped). The heat sink may also have cooling holes separate from the through-holes for allowing refrigerant to pass through. In this case, the cooling holes may be made of an insulating material such as resin. Heat sink fins that exchange heat with the refrigerant may also be formed on the heat sink. In this case, the heat sink fins may be made of a material with high thermal conductivity and low electrical conductivity (e.g., graphite). The cover is not limited to resin materials and may be made of conductive materials such as metal.

[0105] The first and second sensor wires may not be directly connected to the shunt resistor. Alternatively, they can be connected to the shunt resistor via other devices. Specifically, in... Figure 2 In the example shown, the first sensor line 51 can also be connected to the wire 42a and electrically connected to the shunt resistor 50 via the wire 42a. Similarly, the second sensor line 52 can also be connected to the wire 42b and electrically connected to the shunt resistor 50 via the second power line 42.

[0106] The power semiconductor module incorporates a shunt resistor for current measurement as a sensor element. However, it is not limited to this; the power semiconductor module may also incorporate other sensor elements such as Hall effect sensors. Even in this case, the number of bits in the processed power value can sometimes differ significantly among the sensor elements other than the power semiconductor element and the shunt resistor. Even in such cases, the power semiconductor module can suppress the influence of radiated noise on the sensor element's detection signal.

[0107] At least some of the embodiments and various modifications described above can be combined arbitrarily.

[0108] The following outlines the main points of this disclosure.

[0109] [1] A power semiconductor module, wherein,

[0110] The aforementioned power semiconductor module includes:

[0111] A power semiconductor device has a first electrode, a second electrode, and a control electrode, and alternately switches between conduction and non-conduction between the first electrode and the second electrode according to a control signal provided to the control electrode.

[0112] The first power line portion and the second power line portion are electrically connected to the first electrode and the second electrode respectively, and transmit power between the first electrode and the second electrode.

[0113] The heat sink has a surface on which the power semiconductor element is disposed and a back surface opposite to the surface, and is capable of dissipating heat from the power semiconductor element.

[0114] A sensor element is disposed on the aforementioned surface of the aforementioned heat sink; and

[0115] The first sensor wire and the second sensor wire are electrically connected to the aforementioned sensor element, respectively.

[0116] The aforementioned heat sink includes a shielding layer made of a material having at least one of electrical conductivity and magnetism.

[0117] The aforementioned heat sink has at least one through hole that connects the aforementioned surface and the aforementioned back surface.

[0118] Of the aforementioned first power line portion, second power line portion, first sensor line portion, and second sensor line portion, only the first sensor line portion and the second sensor line portion are led out to the area on the back side of the heat sink through the aforementioned through hole.

[0119] [2] According to the power semiconductor module described in [1] above, wherein,

[0120] The aforementioned sensor element is a shunt resistor for current measurement, which is electrically connected in series with the middle section of the second power line section.

[0121] [3] According to the power semiconductor module described in [2] above, wherein,

[0122] The aforementioned shunt resistor is disposed on the aforementioned surface of the aforementioned heat sink.

[0123] The aforementioned heat sink can dissipate heat from the aforementioned shunt resistor.

[0124] [4] According to any one of [1] to [3] above, the power semiconductor module, wherein,

[0125] At least one of the aforementioned through holes is formed at a position that does not overlap with the aforementioned first power line portion and the aforementioned second power line portion when viewed from above the aforementioned heat sink.

[0126] [5] According to any one of [1] to [4] above, the power semiconductor module, wherein,

[0127] The aforementioned heat sink has one of the aforementioned through holes.

[0128] The first sensor wire and the second sensor wire are led out to the area on the back side through the through hole.

[0129] [6] According to the power semiconductor module described in [5] above, wherein,

[0130] The first sensor wire and the second sensor wire are led out to the area on the back side through the through hole while twisted together.

[0131] [7] According to the power semiconductor module described in [5] or [6] above, wherein,

[0132] The aforementioned first sensor line and the aforementioned second sensor line include a common-mode filter or transformer capable of removing the common-mode component of conducted noise transmitted in the aforementioned first sensor line and the aforementioned second sensor line.

[0133] The aforementioned common-mode filter or the aforementioned transformer is disposed inside one of the aforementioned through holes.

[0134] [8] According to any one of [1] to [7] above, the power semiconductor module, wherein,

[0135] It also includes a cylindrical electromagnetic shielding member, which is arranged to surround the first sensor line portion between the end of the first sensor line portion on the sensor element side and the opening of one of the through holes on the surface, and includes a shielding layer made of a material having at least one of electrical conductivity and magnetism.

[0136] [9] According to any one of [1] to [4] and [8] above, the power semiconductor module wherein,

[0137] The aforementioned heat sink has a first through hole and a second through hole formed at different positions on the aforementioned surface as the through holes.

[0138] The aforementioned first sensor wire is led out to the aforementioned area on the back side through the aforementioned first through hole.

[0139] The second sensor line is led out to the area on the back side through the second through hole.

[0140]

[10] According to any one of [1] to [9] above, the power semiconductor module, wherein,

[0141] At least one of the aforementioned through holes is formed at a position that overlaps with the aforementioned sensor element when viewed from above the aforementioned heat sink.

[0142]

[11] According to any one of [1] to

[10] above, the power semiconductor module, wherein,

[0143] It includes a cover that covers the surface of the heat sink on which the power semiconductor element is mounted.

[0144] The first electric field line portion and the second electric field line portion extend from the first electrode and the second electrode toward the cover, and are led out through the cover to the outside of the area covered by the cover.

[0145]

[12] According to the power semiconductor module described in

[11] above, wherein,

[0146] The cover has a side wall portion and a top plate that faces the surface across the side wall portion.

[0147] The first electric field line portion and the second electric field line portion extend from the first electrode and the second electrode toward the top plate, and are led out through the top plate to the outside of the area covered by the cover.

[0148]

[13] A power conversion device, wherein,

[0149] The aforementioned power conversion device includes:

[0150] The power conversion unit, having a power semiconductor module described in any one of [1] to

[12] above, converts the first form of power supplied by the power source into the second form of power required by the load device; and

[0151] The control unit sends control signals to the power semiconductor module based on the detection signals from the aforementioned sensor elements.

[0152] Explanation of reference numerals in the attached figures

[0153] 1…Power conversion device; 2…Switching circuit (power conversion unit); 3…Control board (control unit); 5, 5A, 5B, 5C, 5D, 5E, 5F…Power semiconductor module; 10, 10A, 10B, 10C, 10D, 10E, 10F…Power semiconductor element; 11…Drain electrode (first electrode); 12…Source electrode (second electrode); 13…Gate electrode (control electrode); 20…Housing; 21, 21A, 21C, 21E…Heat sink; 21a…Surface; 21b…Back side; 22…Cover; 22a…Top plate; 22b…Side plate (side wall) 41…First power line section; 42…Second power line section; 50…Shunt resistor (sensor element); 51…First sensor line section; 52…Second sensor line section; 61…First magnetic shield (electromagnetic shield); 62…Second magnetic shield (magnetic shield); 70…Common mode filter; 80…Transformer; B…Power supply; E1…Control signal; E2…Power; H10, H40, H50, H60…Through hole; H20…First through hole; H30…Second through hole; H40…Through hole; M…Load device; N…Radiated noise; R1, R2…Region.

Claims

1. A power semiconductor module, wherein, The power semiconductor module includes: A power semiconductor device has a first electrode, a second electrode, and a control electrode, and alternately switches between conduction and non-conduction between the first electrode and the second electrode according to a control signal provided to the control electrode; The first power line section and the second power line section are electrically connected to the first electrode and the second electrode, respectively, and transmit power between the first electrode and the second electrode; A heat sink has a surface on which the power semiconductor element is disposed and a back surface opposite to the surface, and is capable of dissipating heat from the power semiconductor element; A sensor element is disposed on the surface of the heat sink; as well as The first sensor wire and the second sensor wire are electrically connected to the sensor element, respectively. The heat sink includes a shielding layer made of a material having at least one of electrical conductivity and magnetism. The heat sink has at least one through hole that connects the surface and the back surface. Only the first sensor line portion and the second sensor line portion of the first power line portion, the second power line portion, the first sensor line portion, and the second sensor line portion are led out to the area on the back side of the heat sink through the through hole.

2. The power semiconductor module according to claim 1, wherein, The sensor element is a shunt resistor for current measurement, which is electrically connected in series with the middle part of the second power line section.

3. The power semiconductor module according to claim 2, wherein, The shunt resistor is disposed on the surface of the heat sink. The heat sink can dissipate heat from the shunt resistor.

4. The power semiconductor module according to claim 1, wherein, At least one of the through holes is formed at a position that does not overlap with the first power line portion and the second power line portion when the heat sink is viewed from above.

5. The power semiconductor module according to claim 1, wherein, The heat sink has one of the through holes. The first sensor wire and the second sensor wire are led out to the region on the back side through the through hole.

6. The power semiconductor module according to claim 5, wherein, The first sensor wire and the second sensor wire are led out to the area on the back side through a through hole while being twisted together.

7. The power semiconductor module according to claim 5, wherein, The first sensor line portion and the second sensor line portion include a common-mode filter or transformer capable of removing the common-mode component of conducted noise transmitted in the first sensor line portion and the second sensor line portion, respectively. The common-mode filter or the transformer is disposed inside one of the through holes.

8. The power semiconductor module according to claim 5, wherein, It also includes a cylindrical electromagnetic shielding member, which is arranged to surround the first sensor line portion between the end of the first sensor line portion on the sensor element side and the opening of the through hole on the surface, and includes a shielding layer made of a material having at least one of electrical conductivity and magnetism.

9. The power semiconductor module according to claim 1, wherein, The heat sink has a first through hole and a second through hole formed at different positions on the surface as the through holes. The first sensor wire is led out to the region on the back side through the first through hole. The second sensor wire is led out to the area on the back side through the second through hole.

10. The power semiconductor module according to claim 1, wherein, At least one of the through holes is formed at a location that overlaps with the sensor element when viewed from above the heat sink.

11. The power semiconductor module according to claim 1, wherein, The device includes a cover that covers the surface of the heat sink on which the power semiconductor element is mounted. The first electric field line portion and the second electric field line portion extend from the first electrode and the second electrode toward the cover, and are led out through the cover to the outside of the area covered by the cover.

12. The power semiconductor module according to claim 11, wherein, The cover has sidewall portions and a top plate that faces the surface across the sidewall portions. The first power line portion and the second power line portion extend from the first electrode and the second electrode toward the top plate, and are led out through the top plate to the outside of the area covered by the cover.

13. A power conversion device, wherein, The power conversion device includes: The power conversion unit includes a power semiconductor module as described in any one of claims 1 to 12, which converts the first form of power supplied by the power source into the second form of power required by the load device; and The control unit sends control signals to the power semiconductor module based on the detection signals from the sensor element.

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