Mist-CVD (Chemical Vapor Deposition) reaction furnace system for epitaxial film

Abstract

The invention discloses a Mist-CVD (Chemical Vapor Deposition) reaction furnace system of an epitaxial film, and belongs to the technical field of film growth. The system integrates the advantages of a hot wall type structure and a fine channel type structure, and comprises four core modules: a three-inlet cylindrical liquid drop screener module, a fog rectification and preheating module, a film growth module and a horizontal tube furnace. Sufficient and uniform distribution of mist amount is ensured through three parallel inlets, the cylindrical screener screens the size of liquid drops based on gravity, the preheating module reduces temperature impact of mist flow on a substrate, the trapezoidal rectification structure optimizes laminar flow characteristics of the mist flow, and horizontal and inclined slits are combined to reduce the flow speed and prolong the retention time of the liquid drops. The system adopts a multi-temperature-zone design and is provided with ventilation equipment, so that the growth temperature and the fog flow power are balanced. Simulation verification shows that the system can effectively eliminate turbulent flow and stabilize a temperature field and a flow field, realizes efficient growth of large-size, high-uniformity and high-quality epitaxial films, and is suitable for preparation of transparent conductive oxides and functional coatings.

Description

Technical Field

[0001] This invention relates to the field of thin film growth technology, specifically to a Mist-CVD reactor system for epitaxial thin films. Background Technology

[0002] Mist-CVD (mist chemical vapor deposition) is a technique for growing thin films by transporting precursors through droplets. Its working principle involves first using an ultrasonic atomizer to convert a solution containing precursors into micron-sized droplets. These droplets are then transported by a carrier gas to a high-temperature reaction chamber. Upon reaching the substrate surface, the low-temperature droplets form a vapor film due to the Leidenforest phenomenon. Propelled by the gas, the droplets slide on the substrate. Simultaneously, water inside the droplets evaporates, and the precursor material is adsorbed onto the substrate. Through a series of chemical reactions, a uniform and dense thin film is deposited layer by layer on the substrate surface. Other generated byproducts are expelled from the system by the carrier gas. This technology combines the low cost of solution methods with the high uniformity of vapor deposition, showing significant advantages, especially in the fields of transparent conductive oxides (such as ZnO, SnO2, and Ga2O3) and functional coatings, and has broad development prospects.

[0003] Currently, there are two main types of Mist-CVD systems: hot-wall and narrow-channel. In the hot-wall Mist-CVD system, the substrate is placed inside a tube furnace, and the furnace temperature is achieved by heating the resistance wire of the tube furnace. (See Ha Minh-Tan, et al. Leidenfrost Motion of Water Microdroplets on Surface Substrate: Epitaxy of Gallium Oxide via Mist Chemical Vapor Deposition[J]. Advanced Materials Interfaces, 2021, 8(1): 2001895. DOI: 10.1002 / admi.202001895.). Its advantages are: simple structure, and the reaction system is in a high-temperature isothermal state, which is conducive to the activation of reactants and the progress of chemical reactions. However, its disadvantage is that the overall reaction space is large, which is not conducive to the growth of large-size uniform films. Increasing the tube diameter will make it easier to form turbulence, but reducing the tube diameter will make it impossible to install large-size substrates. The substrate with a narrow channel structure is placed inside the slit, and the electrode of the slit directly heats the substrate. See Kawaharamura Toshiyuki. Physics on development of open-air atmospheric pressure thin film fabrication technique using Mist droplets: Control of precursor flow[J]. Japanese Journal of Applied Physics, 2014, 53(5):05FF08.DOI:10.7567 / JJAP.53.05FF08. Its advantages are: the slit structure and the laminar flow inside the slit are suitable for growing large-size epitaxial films. However, the disadvantages are that the low-temperature mist flow enters the extremely narrow space from the large space, which can easily cause a sudden drop in substrate temperature, a sudden increase in pressure, and a sudden increase in flow rate, resulting in lower film quality and excessively fast droplet movement speed within the slit, leading to relatively low deposition efficiency.

[0004] Therefore, it is necessary to propose a Mist-CVD reactor system for epitaxial thin films and its preparation method. Summary of the Invention

[0005] To address the problems existing in the prior art, the present invention provides a Mist-CVD reactor system for epitaxial thin films, which can achieve the following objectives: droplet size screening, preheating of the mist flow to prevent a sharp drop in temperature inside the slit when the mist flow flows in, rectification, and reduction of droplet flow velocity inside the slit.

[0006] To achieve the above objectives, the technical solution of this invention is as follows: This invention consists of four parts: a three-inlet cylindrical droplet filter module, a mist rectification and preheating module, a thin film growth module, and a horizontal tube furnace. After each module is fabricated, it needs to be assembled and placed inside the horizontal tube furnace. The system can move within the horizontal tube furnace to facilitate the optimization of growth conditions during experiments.

[0007] The specific technical solution of the Mist-CVD reactor system for epitaxial thin films of the present invention includes: a three-inlet cylindrical droplet filter module, a mist rectification and preheating module, a thin film growth module, and a horizontal tube furnace;

[0008] The three-inlet cylindrical droplet filter module structure includes:

[0009] The cylindrical screen has three cylindrical inlets installed evenly and parallel at its center. The cylindrical screen performs preliminary screening on the droplets entering from the cylindrical inlets to ensure that the droplet size flowing into the horizontal tube furnace is uniform.

[0010] A cuboid outlet is installed on the side of the cylindrical screen opposite to the three cylindrical inlets. The end of the cuboid outlet connected to the cylindrical screen has an arc-shaped opening that fits the cylindrical curvature of the cylindrical screen.

[0011] The structure of the mist rectification and preheating module includes:

[0012] The side of the fog rectification and preheating module near the cuboid outlet is designed as a hollow cuboid inlet, serving as a space for fog flow preheating. This consumes droplets of excessively small size, and proper preheating helps reduce the cooling effect of the fog flow on the substrate. The cuboid inlet and outlet are connected. The other side of the fog rectification and preheating module is designed as a hollow right-angled trapezoidal block. The interior of the cuboid inlet and the right-angled trapezoidal block are connected to form a rectification channel for the fog flow. The height of the internal flow channel gradually narrows from the cuboid inlet towards the right-angled trapezoidal block, mitigating the droplet impact on the wall, pressure surge, and velocity surge caused by the fog flow impacting the wall after reaching the slit from the large space. The channel outlet of the right-angled trapezoidal block is designed as a groove structure, which is connected to the thin film growth module. After installation and fixation, the lower surface of the internal flow channel of the fog rectification and preheating module is flush with the wall, ensuring smooth and unobstructed flow of the fog flow into the slit.

[0013] The structure of the thin film growth module includes:

[0014] The side of the thin film growth module adjacent to the groove structure is set as a horizontal rectangular block, and the horizontal rectangular block extends away from the groove structure as an inclined rectangular block. A slit is opened in the center of the horizontal rectangular block and the inclined rectangular block. The inclined rectangular block is set at an angle to the horizontal plane to reduce the mist flow velocity in the slit, so that the droplets stay on the substrate for a longer time and improve the raw material utilization rate.

[0015] The horizontal tube furnace is configured as a dual-temperature zone furnace. From the low-temperature zone to the high-temperature zone inside the horizontal tube furnace, it is sequentially configured with a three-inlet cylindrical droplet filter module, a mist rectification and preheating module, and a thin film growth module. Ventilation equipment is installed at the air outlet of the horizontal tube furnace to generate a pressure difference inside the horizontal tube furnace and promote the movement of the mist flow.

[0016] Preferably, the bottom horizontal plane of the groove structure is set to coincide with the bottom horizontal plane of the rectification channel inside the mist rectification and preheating module.

[0017] Preferably, the angle between the inclined rectangular block and the horizontal plane is set to 5-30 degrees.

[0018] Preferably, the angle between the inclined rectangular block and the horizontal plane is set to 15 degrees, which can optimally reduce the mist flow velocity in the slit, allowing the droplets to stay on the substrate for a longer time and improving the utilization rate of raw materials.

[0019] Preferably, the cuboid inlet serves as the space for preheating the mist flow. To ensure heat insulation, it is filled with heat insulation cotton on the outside. Appropriate preheating can reduce the cooling effect of the mist flow on the substrate.

[0020] Preferably, the axis of the cylindrical structure inlet is coplanar and perpendicular to the axis of the cylindrical screen and the axis of the arc-shaped opening to ensure a greater supply of raw materials, while ensuring that the mist flow entering the cuboid outlet is evenly distributed in the horizontal direction.

[0021] Preferably, the three-inlet cylindrical droplet filter module is made of acrylic material and bonded together, which allows for observation of the internal mist flow.

[0022] Preferably, the mist rectifier and preheating modules are made of high-temperature resistant and acid and alkali corrosion resistant quartz glass and fused together to ensure good airtightness; and the quartz glass is resistant to high temperature and acid and alkali corrosion.

[0023] Preferably, the thin film growth module is made of alumina ceramic material and spliced ​​together. Alumina ceramic material has high thermal conductivity, high temperature resistance, acid and alkali corrosion resistance, and is not easily deformed at high temperatures.

[0024] In summary, the present invention provides a Mist-CVD reactor system for epitaxial thin films, achieving the following beneficial effects:

[0025] (1) The use of three parallel cylindrical inlets can ensure sufficient fog volume and uniform fog flow in the horizontal direction.

[0026] (2) The three-inlet cylindrical droplet filter module can automatically filter droplets with excessively large particle size by gravity, ensuring that the droplets used for thin film deposition are of consistent size.

[0027] (3) Adding a preheating device can consume smaller droplets, further ensuring the consistency of droplet size in the mist flow, and at the same time, properly preheating the mist flow can reduce the cooling effect of the low-temperature mist flow on the substrate temperature.

[0028] (4) Set up a right-angled trapezoidal rectifier to gradually reduce the height of the space and slow down the droplet collision with the wall and the sudden change in pressure and velocity when the mist enters the slit.

[0029] (5) The thin film growth module adopts a slit structure with horizontal and inclined sections. The horizontal slit is used for rectification and transition, while the inclined slit reduces the speed of the mist flow, increases the residence time of droplets on the substrate, and improves the utilization rate of raw materials.

[0030] (6) The horizontal tube furnace is equipped with a low temperature zone and a high temperature zone, which can ensure the growth temperature and prevent the droplets from being evaporated before reaching the substrate.

[0031] (7) A ventilation device is installed at the outlet of the horizontal tube furnace. The pressure difference generated provides power for the movement of the mist flow and prevents blockage. Attached Figure Description

[0032] Figure 1 This is a temperature field diagram inside the furnace at 30 seconds of operation of the thin film growth system;

[0033] Figure 2 This is a temperature field diagram of the slit region when the thin film growth system has been operating for 30 seconds.

[0034] Figure 3 This is a flow field diagram inside the furnace at 30 seconds of operation of the thin film growth system;

[0035] Figure 4 This is a flow field diagram of the slit region when the thin film growth system is operating for 30 seconds.

[0036] Figure 5 This is a diagram showing the flow field and droplet distribution inside the furnace 30 seconds after the thin film growth system begins operation.

[0037] Figure 6 This is a diagram showing the flow field and droplet distribution in the slit region when the thin film growth system is operating for 30 seconds.

[0038] Figure 7 This is a structural diagram of a three-inlet cylindrical droplet filter module;

[0039] Figure 8 This is a cross-sectional view of a three-inlet cylindrical droplet filter module;

[0040] Figure 9 This is a structural diagram of the mist rectification and preheating module;

[0041] Figure 10 This is a cross-sectional view of the mist rectifier and preheating module;

[0042] Figure 11 This is a structural diagram of a thin film growth module;

[0043] Figure 12 This is a cross-sectional view of the thin film growth module;

[0044] Figure 13 This is a diagram of the overall structure of the reaction system;

[0045] Figure 14 This is a cross-sectional view of the entire reaction system;

[0046] In the figure: 1. Rectangular outlet, 2. Cylindrical screener, 3. Cylindrical inlet, 4. Right-angled trapezoidal block, 5. Mist rectification and preheating module, 6. Rectangular inlet, 7. Inclined rectangular block, 8. Horizontal rectangular block, 9. Slit, 10. Three-inlet cylindrical droplet screener module, 11. Thin film growth module, 12. Horizontal tube furnace, 13. Arc-shaped opening, 14. Groove structure, 15. Cylindrical base. Detailed Implementation

[0047] The invention will now be further described with reference to the accompanying drawings.

[0048] like Figures 1 to 14 As shown:

[0049] This invention provides a Mist-CVD reactor system for epitaxial thin films. This system integrates a hot-wall Mist-CVD system and a narrow-channel (slit-type) Mist-CVD system, leveraging their strengths and avoiding their weaknesses to achieve the growth of large-size, high-quality, and high-speed epitaxial thin films. Simultaneously, the temperature field, flow field, and droplet trajectory of the system were simulated using a two-dimensional model transient analysis method within the finite element analysis framework. The geometry of the simulation represents the internal space of the reaction system. Figure 1 To be continued Figure 6The temperature diagram shows that the temperature of the three-inlet cylindrical droplet filter is around 50-70 degrees Celsius, within the temperature tolerance range of the acrylic material. In the mist rectification and preheating module, the temperature gradually decreases from right to left, reflecting the preheating of the carrier gas and droplets in the mist flow. The slit temperature diagram shows that the temperature inside the slit of the reaction system is constant at the growth temperature, and the temperature in the middle of the slit is basically the same as the temperature of the upper and lower substrates, without any excessive temperature gradient. The flow field diagram shows that the disturbance of the mist flow by the cylindrical droplet filter is negligible. At the same time, in the mist rectification and preheating module, it is clear that the mist flow is mainly concentrated on the lower surface of the chamber, and the mist flow gradually narrows under the influence of the trapezoidal rectification structure of the right-angled trapezoidal block, without any mist flow disturbance problem. There is no turbulence in the entire chamber, so the trapezoidal rectification structure is effective in rectifying the mist flow. Within the slit of the mist rectification and preheating module, the mist flow velocity exhibits a trend of higher velocity in the middle and lower velocity at the upper and lower electrodes. This is an inherent characteristic of the fine-channel structure. However, due to the upstream trapezoidal rectification and the transition of the horizontal slit, the velocity gradient is not too high. Moreover, because of the inclined slit structure, the overall velocity of the film growth chamber is relatively low, which can effectively mitigate the significant increase in velocity caused by the mist flow entering the extremely narrow space from a large space. The particle motion and distribution show that the three-inlet cylindrical droplet filter can effectively block large droplets while ensuring that other appropriately sized droplets can smoothly enter the mist rectification and preheating module. Within the slit, the droplets are evenly distributed upstream and downstream, which is a condition for growing large-size, uniform films. Therefore, overall, this structure integrates the advantages of the hot-wall type fine-channel structure, enabling the growth of large-size, high-speed, highly uniform, and high-quality films.

[0050] The specific implementation method is as follows:

[0051] System assembly and module parameter configuration

[0052] (1) Three-inlet cylindrical droplet filter module

[0053] Material: Acrylic (wall thickness 0.2cm), transparent and resistant to chemical corrosion.

[0054] Structural parameters:

[0055] 1) Cylindrical screen: 5cm in diameter, 10.5cm in height, and 0.2cm in wall thickness.

[0056] 2) Three parallel cylindrical inlets: outer diameter 1cm, inner diameter 0.8cm, length 5cm, and center-to-center distance between adjacent inlets 2cm.

[0057] 3) Rectangular outlet: length 10cm, width 8cm, height 2.4cm, radius of arc at the connection with the cylinder 5cm.

[0058] Function: Gravity filters droplets, allowing only droplets with a diameter of less than 10μm to enter subsequent modules, while large waste droplets are deposited at the bottom of the cylinder.

[0059] (2) Mist rectification and preheating module

[0060] Material: Quartz glass (1cm thick), resistant to high temperature (up to 1100℃) and acid and alkali corrosion.

[0061] Structural parameters:

[0062] 1) The first half (preheating section) is a hollow rectangular inlet, 2cm long, 10cm wide and 4cm high, and filled with heat insulation cotton.

[0063] 2) The rear half (rectifier section) is designed as a right-angled trapezoidal block structure with an upper base of 3cm, a lower base of 4cm, a length of 7cm, and a width of 10cm.

[0064] 3) Groove structure: It is set at the channel outlet of the right-angled trapezoidal block, with a length of 1cm, a width of 9cm, and a height of 1cm. The bottom of the groove structure is 0.55cm away from the bottom surface of the mist rectifier and preheating module.

[0065] Function: Preheats the mist flow and fluidizes it through a right-angled trapezoidal structure to avoid sudden changes in flow rate.

[0066] 4) Module base: Four inclined cylindrical bases 15 are installed below the mist rectifier and preheating module. The top of the cylindrical base 15 is cut at an angle and connected to the module. The bottom of the base is rounded, with a length of 4cm and a diameter of 1cm. The bottom surface of the preheating and rectifier module forms an angle of 30° with the cylinder, and the bottom rounded corner radius is 0.5cm.

[0067] (3) Thin film growth module

[0068] Material: Alumina ceramic (thermal conductivity 30W / m·K), high temperature resistant (up to 1500℃).

[0069] Structural parameters:

[0070] 1) Horizontal slit: 2cm long, 8cm wide, and 0.1cm high, used for initial rectification of mist flow.

[0071] 2) Inclined slit: 8cm long, 8cm wide, and 0.1cm high, preferably with an inclination angle of 15°, to optimally reduce droplet velocity. Figure 4 The diagram shows the flow field in the slit region when the thin film growth system is operating for 30 seconds.

[0072] Function: Ensures that droplets cover a 4-inch substrate in laminar flow at a deposition rate of 5-10 nm / min.

[0073] (4) Horizontal tube furnace

[0074] Configuration: Dual-zone tube furnace, total length 100cm, outer diameter 14cm, wall thickness 0.2cm.

[0075] 1) High temperature zone (substrate location): Temperature set to 600℃.

[0076] 2) Low temperature zone (mist inlet): Temperature set at 200℃.

[0077] Auxiliary equipment: Ventilation equipment (50W power) is installed at the outlet to create a negative pressure difference of 10-30Pa to drive the mist flow.

[0078] The epitaxial thin films were prepared using the Mist-CVD reactor system described above, and the steps are as follows:

[0079] Step 1: Assembly of the reactor system and fixation of the substrate;

[0080] (1) Connect the cuboid outlet 1 of the three-inlet cylindrical droplet filter module 10 to the cuboid inlet 6 of the mist rectification and preheating module 5, and seal it with a rubber ring.

[0081] (2) Embed the groove structure 14 at the channel outlet of the right-angled trapezoidal block 4 into the slit 9 entrance on the horizontal structure of the horizontal rectangular block 8, ensuring that the lower surface is flush.

[0082] (3) The entire system is placed horizontally into the horizontal tube furnace 12, and the 3-inch sapphire substrate is fixed in the middle of the slit 9 inside the inclined rectangular block 7 and fixed by ceramic clamps.

[0083] Step 2: Reactor system preheating and parameter setting;

[0084] (1) Turn on the dual-temperature zone tubular furnace, set the high temperature zone to 600℃ and the low temperature zone to 200℃, and preheat for 1 hour until the temperature stabilizes.

[0085] (2) Start the ultrasonic atomization device, add a small amount of hydrochloric acid to the precursor solution of 0.05M Ga(acac)3 aqueous solution to promote dissolution, the hydrochloric acid concentration is 0.4mol / L, the frequency is 1.7MHz, and the average droplet size is 6.3μm;

[0086] (3) Turn on the ventilation equipment at the air outlet of the horizontal tube furnace 12, and adjust the speed to stabilize the negative pressure in the system at 10-30Pa negative pressure difference to drive the mist flow.

[0087] Step 3: Epitaxial thin film deposition process;

[0088] (1) The carrier gas nitrogen is delivered to the reaction system at a flow rate of 5 slm, and the dilution gas oxygen is at a flow rate of 1 slm. After screening, preheating and rectification, it enters the internal slit 9 of the thin film growth module 11.

[0089] (2) The droplet stays on the substrate surface for 2-3 seconds, and the precursor solution decomposes and deposits into a Ga2O3 film. The growth time is 60 minutes.

[0090] (3) Turn off the ultrasonic atomizing device and the horizontal tube furnace 12, and remove the substrate after the system has cooled to room temperature.

[0091] Based on system design and simulation analysis, the technical solution of this invention can achieve the following advantages:

[0092] (1) Through the synergistic effect of the three-inlet cylindrical filter and the trapezoidal rectifier structure, theoretical calculations show that the concentration of droplet size distribution can be increased by more than 30%, providing a basic guarantee for the uniformity of the film.

[0093] (2) Finite element simulation results show that the internal velocity gradient inside the mist rectification and preheating module is reduced by about 40% compared with the traditional fine channel system, and the droplet residence time is extended to 2-3 seconds, which significantly improves the raw material utilization rate.

[0094] (3) Temperature field simulation confirmed that the temperature fluctuation in the substrate area was less than ±5℃, which met the thermal stability requirements of epitaxial growth.

[0095] (4) The modular design supports substrate expansion within 8x8cm, and its structural compatibility is superior to existing technical solutions.

[0096] This embodiment integrates the advantages of hot-wall and fine-channel structures, combined with precise temperature and flow field control, to achieve efficient and uniform deposition of 3-inch Ga2O3 thin films, verifying the practicality and technological advancement of the present invention.

Claims

1. A Mist-CVD reactor system for epitaxial thin films, characterized in that, It includes a three-inlet cylindrical droplet filter module (10), a mist rectification and preheating module (5), a thin film growth module (11), and a horizontal tube furnace (12); The three-inlet cylindrical droplet filter module (10) includes the following structure: Three cylindrical inlets (3) are evenly and parallelly installed at the center of the cylindrical screen (2). The cylindrical screen (2) performs preliminary screening on the droplets entering from the cylindrical inlets (3) to ensure that the droplet particle size flowing into the horizontal tube furnace (12) is uniform. A cuboid outlet (1) is installed on the side opposite to the three cylindrical inlets (3) of the cylindrical screen (2). The end of the cuboid outlet (1) connected to the cylindrical screen (2) has an arc-shaped opening (13) that fits the cylindrical arc of the cylindrical screen (2). The structure of the mist rectification and preheating module (5) includes: The fog rectification and preheating module (5) is configured with a hollow cuboid inlet (6) on one side near the cuboid outlet (1). The cuboid inlet (6) is connected to the cuboid outlet (1). The fog rectification and preheating module (5) is configured with a hollow right trapezoid block (4). The cuboid inlet (6) is connected to the inside of the right trapezoid block (4) to form a rectification channel for fog flow. The height of the internal flow channel from the cuboid inlet (6) to the right trapezoid block (4) is gradually narrowed. The channel outlet of the right trapezoid block (4) is configured with a groove structure (14). The groove structure (14) is connected to the thin film growth module (11). The structure of the thin film growth module (11) includes: The thin film growth module (11) is configured as a horizontal rectangular block (8) on the side adjacent to the groove structure (14), and the horizontal rectangular block (8) extends away from the groove structure (14) as an inclined rectangular block (7). A slit (9) is opened in the center of the interior of the horizontal rectangular block (8) and the inclined rectangular block (7). The inclined rectangular block (7) is set at an angle to the horizontal plane to reduce the mist flow velocity in the slit (9), so that the droplets stay on the substrate for a longer time and improve the raw material utilization rate. The horizontal tube furnace (12) is configured as a dual-temperature zone tube furnace. From the low temperature zone inside the horizontal tube furnace (12) to the high temperature zone, it is configured as a three-inlet cylindrical droplet filter module (10), a mist rectification and preheating module (5), and a thin film growth module (11). Ventilation equipment is provided at the air outlet of the horizontal tube furnace (12).

2. The Mist-CVD reactor system for epitaxial thin films according to claim 1, characterized in that, The bottom horizontal plane of the groove structure (14) coincides with the bottom horizontal plane of the rectification channel inside the mist rectification and preheating module (5).

3. The Mist-CVD reactor system for epitaxial thin films according to claim 1, characterized in that, The angle between the inclined rectangular block (7) and the horizontal plane is set to 5-30 degrees.

4. The Mist-CVD reactor system for epitaxial thin films according to claim 3, characterized in that, The angle between the tilted rectangular block (7) and the horizontal plane is set to 15 degrees.

5. The Mist-CVD reactor system for epitaxial thin films according to claim 1, characterized in that, The cuboid entrance (6) serves as a space for preheating the mist flow. To provide insulation, thermal insulation cotton is filled on its exterior.

6. The Mist-CVD reactor system for epitaxial thin films according to claim 1, characterized in that, The axis of the cylindrical structure inlet (3) is coplanar and perpendicular to the axis of the cylindrical screener (2) and the axis of the arc-shaped opening (13) to ensure a greater supply of raw materials, while ensuring that the mist flow entering the cuboid outlet (1) is evenly distributed in the horizontal direction.

7. The Mist-CVD reactor system for epitaxial thin films according to claim 1, characterized in that, The three-inlet cylindrical droplet filter module (10) is made of acrylic material and bonded together, which can observe the internal mist flow.

8. The Mist-CVD reactor system for epitaxial thin films according to claim 1, characterized in that, The fog rectifier and preheating module (5) is made of high temperature and acid and alkali corrosion resistant quartz glass and fused together to ensure good airtightness.

9. The Mist-CVD reactor system for epitaxial thin films according to claim 1, characterized in that, The thin film growth module (11) is made of alumina ceramic material and spliced ​​together.

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