Fluid discharge device and semiconductor process equipment

Abstract

The invention discloses a fluid discharge device and semiconductor process equipment, and relates to the technical field of semiconductor preparation, and the disclosed fluid discharge device comprises a box body and a separation part; the partition part is arranged in the box body and divides the box body into a first space and a second space, the bottoms of the first space and the second space are communicated with each other, a first fluid inlet is formed in the box body corresponding to the first space, the first fluid inlet is used for being communicated with the fluid discharge port, a liquid discharge port and an exhaust port are formed in the box body corresponding to the second space, and the liquid discharge port is used for being communicated with a factory liquid discharge pipeline; the exhaust port is used for communicating with a factory exhaust pipeline; the exhaust port is higher than the liquid discharge port, the liquid discharge port is higher than the bottom plate of the box body, the lower edge of the separation part and the bottom plate are arranged at an interval, and at least part of the separation part can move up and down in the box body and can form a liquid seal structure with the liquid level in the box body, so that waste gas in the factory exhaust pipeline can be prevented from flowing back into the semiconductor process chamber.

Description

Technical Field

[0001] This application relates to the field of semiconductor fabrication technology, and in particular to a fluid discharge device and semiconductor process equipment. Background Technology

[0002] Semiconductor silicon wafers, as the main raw material for manufacturing components such as chips and solar cells, are widely used in communications, power generation, lighting, and medical fields. During processing, semiconductor silicon wafers need to undergo cleaning and drying processes within process chambers. Inevitably, waste gas and waste liquid are generated within these chambers. Furthermore, to improve production efficiency, multiple process chambers are often set up to perform processes simultaneously. Waste liquid and waste gas generated in different process chambers are collected through plant drainage and exhaust pipes for unified treatment and discharge. However, when the exhaust system in the plant exhaust pipes malfunctions, waste gas emitted from multiple process chambers can accumulate within the exhaust pipes, and this waste gas can easily flow back into the process chambers, contaminating the process chambers and the semiconductor silicon wafers within them. Summary of the Invention

[0003] This application discloses a fluid discharge device and semiconductor process equipment to solve the problem in related technologies where waste gas is backflowed into the process chamber, causing contamination of the process chamber and the semiconductor silicon wafers inside the process chamber.

[0004] To solve the above-mentioned technical problems, this application is implemented as follows:

[0005] In a first aspect, embodiments of this application disclose a fluid discharge device applied to a semiconductor process chamber, the fluid discharge device comprising a housing and a partition;

[0006] The partition is located inside the box and divides the box into a first space and a second space that are interconnected at the bottom. The box corresponding to the first space is provided with a first fluid inlet, which is used to communicate with the fluid discharge port of the semiconductor process chamber. The box corresponding to the second space is provided with a drain port and an exhaust port.

[0007] The exhaust port is higher than the drain port, the drain port is higher than the bottom plate of the box, the lower edge of the partition is spaced apart from the bottom plate, and at least a portion of the partition can move up and down inside the box.

[0008] Secondly, embodiments of this application disclose a semiconductor process apparatus, which includes a semiconductor process chamber and the aforementioned fluid discharge device. The semiconductor process chamber is provided with a fluid discharge port, which is connected to the first fluid inlet.

[0009] The technical solution adopted in this application can achieve the following technical effects:

[0010] The fluid discharge device disclosed in this application improves upon related technologies by providing a partition within the housing, dividing the housing into a first space and a second space that are interconnected at their bottoms. The first space has a first fluid inlet connected to a fluid discharge port. The second space has a drain port and an exhaust port. The drain port connects to a plant drainage pipeline, and the exhaust port connects to a plant exhaust pipeline. The exhaust port is higher than the drain port and higher than the bottom plate of the housing. The lower edge of the partition is spaced apart from the bottom plate, and at least a portion of the partition can move vertically within the housing. When waste gas and waste liquid are discharged into the housing from the semiconductor process chamber through the first fluid inlet, the waste liquid accumulates at the bottom of the housing, and the lower edge of the partition extends into the waste liquid, thus forming a liquid-sealed partition between the plant exhaust pipeline and the semiconductor process chamber. If the plant exhaust pipeline is under normal negative pressure, the exhaust gas can still be discharged into the plant exhaust pipeline through the first fluid inlet, the first space, the lower edge of the partition, the second space, and the exhaust port under negative pressure. If the plant exhaust pipeline is blocked, the liquid seal of the partition can prevent the exhaust gas in the plant exhaust pipeline from flowing back into the semiconductor process chamber, thereby avoiding the problem of exhaust gas backflow causing contamination to the semiconductor process chamber and the semiconductor silicon wafers in the semiconductor process chamber. Attached Figure Description

[0011] Figure 1 This is a schematic diagram of the structure of the semiconductor process equipment disclosed in the embodiments of this application;

[0012] Figure 2 This is a schematic diagram of the structure of the fluid discharge device disclosed in the embodiments of this application;

[0013] Figure 3 This is an exploded view of the fluid discharge device disclosed in the embodiments of this application;

[0014] Figure 4 This is a cross-sectional view of the fluid discharge device disclosed in the embodiments of this application;

[0015] Figure 5 This is one of the structural schematic diagrams of the baffle mechanism disclosed in the embodiments of this application;

[0016] Figure 6 This is an exploded view of the baffle mechanism disclosed in the embodiments of this application;

[0017] Figure 7 This is a second schematic diagram of the baffle mechanism disclosed in the embodiments of this application;

[0018] Figure 8 This is the third schematic diagram of the baffle mechanism disclosed in the embodiments of this application;

[0019] Figure 9 This is a cross-sectional view of the baffle mechanism disclosed in the embodiments of this application.

[0020] Explanation of reference numerals in the attached figures:

[0021] 100-Fluid discharge device, 110-Box body, 111-First space, 112-Second space, 1121-First subspace, 1122-Second subspace, 113-First fluid inlet, 114-Drain port, 115-Exhaust port, 116-Box body, 1161-Bottom plate, 1162-Side plate, 117-Cover plate, 118-Second fluid inlet, 119-Mounting section, 120-Separation section, 121-First partition, 122-Second partition, 123-First float, 12 4-First guide section, 130-Baffle mechanism, 131-Baffle body, 132-Shaft, 133-Mounting bracket, 1331-First mounting groove, 1332-Second mounting groove, 134-First limiting member, 135-Second limiting member, 140-Sealing gasket, 150-Vacuum pump, 160-Pipe connection flange, 170-First valve, 180-Second valve, 190-Third partition, 191-Flow port, 192-Second float, 193-Second guide section, 1931-Guide rod;

[0022] 200 - Semiconductor process chamber, 210 - Fluid discharge port, 220 - Chamber body, 230 - Process tank, 231 - Drain valve. Detailed Implementation

[0023] To make the objectives, technical solutions, and advantages of this application clearer, the technical solutions of this application will be clearly and completely described below in conjunction with specific embodiments and corresponding drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of them. All other embodiments obtained by those skilled in the art based on the embodiments of this application without creative effort are within the scope of protection of this application.

[0024] The terms "first," "second," etc., used in the specification and claims of this application are used to distinguish similar objects and are not used to describe a specific order or sequence. It should be understood that such data can be interchanged where appropriate so that embodiments of this application can be implemented in orders other than those illustrated or described herein, and the objects distinguished by "first," "second," etc., are generally of the same class and are not limited in number; for example, a first object can be one or more.

[0025] The technical solutions disclosed in the various embodiments of this application are described in detail below with reference to the accompanying drawings.

[0026] During semiconductor fabrication, waste gas and waste liquid are inevitably generated within the semiconductor process chamber 200. Taking the semiconductor cleaning and drying process as an example, liquid chemical solvents are used to etch and dissolve contaminants, organic matter, and metal ion contaminants on the semiconductor surface. After cleaning, the semiconductor surface is dried using IPA (Isopropyl Alcohol). During these cleaning and drying processes, a significant amount of waste liquid and waste gas is generated within the semiconductor process chamber 200. This waste liquid and waste gas need to be discharged through pipelines to the plant drainage pipeline and plant exhaust pipeline, respectively, for collection and treatment. Furthermore, to improve production efficiency, the plant drainage pipeline and plant exhaust pipeline are connected to multiple semiconductor process chambers 200, allowing for unified collection and treatment of waste liquid and waste gas emitted from multiple semiconductor process chambers 200.

[0027] During the exhaust gas discharge process of the semiconductor process chamber 200, the fan in the plant exhaust duct generates negative pressure inside the plant exhaust duct, thereby guiding the exhaust gas from the semiconductor process chamber 200 into the plant exhaust duct. If the fan malfunctions, the exhaust gas discharged from the semiconductor process chamber 200 will accumulate in the plant exhaust duct. When the exhaust gas accumulates to a certain amount, it can easily backflow into the semiconductor process chamber 200 through the exhaust passage, causing contamination to the components and semiconductor silicon wafers inside the semiconductor process chamber 200.

[0028] Based on the above, please refer to Figures 1 to 9 This application discloses a fluid discharge device 100, which is applied to the semiconductor process chamber 200 described above. The semiconductor process chamber 200 is provided with a fluid discharge port 210, which can be used to discharge waste gas or waste liquid separately, or to discharge waste gas and waste liquid simultaneously.

[0029] like Figures 1 to 4 As shown, the disclosed fluid discharge device 100 may include a housing 110 and a partition 120. The housing 110 may be made of resin, and the partition 120 may be made of the same material as the housing 110. The housing 110 has an inner cavity, and the partition 120 is disposed inside the housing 110. A certain gap is reserved between the lower edge of the partition 120 and the bottom plate 1161 of the housing 110. The other edges of the partition 120 are fitted and connected to the inner wall of the housing 110, thereby dividing the inner cavity of the housing 110 into a first space 111 and a second space 112 that are interconnected at the bottom. The connection method between the housing 110 and the partition 120 may be bonding, welding, etc.

[0030] The first space 111 has a first fluid inlet 113 on its housing 110, which is used to connect with the fluid discharge port 210 of the semiconductor process chamber 200. The second space 112 has a drain port 114 and an exhaust port 115 on its housing 110. The drain port 114 is used to connect with the plant drainage pipeline, and the exhaust port 115 is used to connect with the plant exhaust pipeline. The waste gas and waste liquid discharged from the semiconductor process chamber 200 will flow into the first space 111 through the fluid discharge port 210 and the first fluid inlet 113, and at the same time flow into the second space 112 through the gap between the lower edge of the partition 120 and the bottom plate 1161 of the housing 110. The waste gas and waste liquid can also be separated in the second space 112. The waste gas will be discharged to the plant exhaust pipeline through the exhaust port 115, and the waste liquid will be discharged to the plant drainage pipeline through the drain port 114.

[0031] It should be noted that the fluid discharge port 210 and the first fluid inlet 113 can be used to discharge waste gas or waste liquid separately, or to discharge waste gas and waste liquid simultaneously. When the fluid discharge port 210 and the first fluid inlet 113 are used to discharge waste liquid at a large flow rate, the waste liquid will occupy more pipeline space, and the amount of waste gas discharged will be less. When the fluid discharge port 210 and the first fluid inlet 113 are used to discharge waste liquid at a small flow rate, the waste liquid will only occupy a part of the pipeline space, allowing for the simultaneous discharge of waste liquid and waste gas. Of course, when there is no need to discharge waste liquid, the fluid discharge port 210 and the first fluid inlet 113 can also be used only for the discharge of waste gas.

[0032] The vent 115 is higher than the drain 114, ensuring that the venting and draining processes do not interfere with each other. Furthermore, the drain 114 is higher than the bottom plate 1161 of the housing 110; that is, the lowest point of the drain 114 is higher than the bottom plate 1161 of the housing 110. The height difference between the lowest point of the drain 114 and the bottom plate 1161 can be 20mm-100mm. When draining through the fluid discharge port 210 and the first fluid inlet 113, because the drain 114 is higher than the bottom plate 1161 of the housing 110, the liquid will not be completely discharged from the housing 110 and will accumulate at the bottom of the housing 110 to form a liquid surface. The lower edge of the partition 120 (the edge of the partition 120 near the bottom plate 1161 of the housing 110) is spaced apart from the bottom plate 1161, and at least a portion of the partition 120 can move vertically within the housing 110. The partition 120 can adopt a telescopic structure, adjusting the distance between its lower edge and the base plate 1161 by changing its length. When the waste liquid in the tank 110 accumulates to a certain height, the lower edge of the partition 120 can extend below the liquid surface to form a liquid seal structure.

[0033] When the fluid discharge port 210 and the first fluid inlet 113 are used for large-flow waste liquid discharge, the waste liquid will enter the first space 111 from the first fluid inlet 113. There will be a large liquid level difference on both sides of the partition 120. Under the action of gravity, the waste liquid will flow from the lower edge of the partition 120 into the second space 112 and be discharged into the plant drainage pipeline through the discharge port 114. In this scenario, the amount of waste gas emission can be basically ignored. It should be added that when discharging waste liquid at a large flow rate, the waste liquid will first enter the first space 111. In order to improve the waste liquid discharge efficiency, the first space 111 can occupy two-thirds of the volume of the tank 110, and the second space 112 can occupy one-third of the volume of the tank 110.

[0034] When the fluid discharge port 210 and the first fluid inlet 113 are used for small-flow discharge of waste liquid, the waste liquid will only occupy a part of the pipeline space, allowing for the simultaneous discharge of waste liquid and waste gas. The waste liquid will collect at the bottom of the housing 110 and form a liquid seal with the partition 120, with a small liquid level difference on both sides of the partition 120. Since the plant exhaust pipeline is under negative pressure, a small gas passage can be formed between the lower edge of the partition 120 and the liquid surface under the negative pressure, allowing the waste gas to flow from the first space 111 to the second space 112 and be discharged into the plant exhaust pipeline through the exhaust port 115. When the fan in the plant exhaust pipeline fails, the negative pressure disappears, the gas passage between the lower edge of the partition 120 and the liquid surface is closed, and the waste gas inside the plant exhaust pipeline can only reach the second space and cannot continue to enter the first space, thus preventing the waste gas in the plant exhaust pipeline from flowing back into the semiconductor process chamber 200.

[0035] When there is no need to discharge waste liquid and the fluid discharge port 210 and the first fluid inlet 113 are only used for the discharge of waste gas, liquid can be added to the inside of the housing 110 to form a liquid surface at the bottom of the housing 110 and form a liquid seal with the lower edge of the partition 120, which can also prevent the waste gas in the plant exhaust pipe from flowing back into the semiconductor process chamber 200.

[0036] As described above, the fluid discharge device 100 disclosed in this application improves upon related technologies. When the semiconductor process chamber 200 discharges waste gas and waste liquid into the housing 110 through the first fluid inlet 113, the waste liquid will collect at the bottom of the housing 110, and the lower edge of the partition 120 will extend into the waste liquid, thereby forming a liquid seal between the plant exhaust pipe and the semiconductor process chamber 200. If the plant exhaust pipe is under normal negative pressure, the waste gas can still be discharged into the plant exhaust pipe through the first fluid inlet 113, the first space 111, the lower edge of the partition 120, the second space 112, and the exhaust port 115 under negative pressure. If the plant exhaust pipe is blocked, the liquid seal of the partition 120 can prevent the waste gas in the plant exhaust pipe from flowing back into the semiconductor process chamber 200, thereby avoiding the problem of waste gas backflow causing contamination to the semiconductor process chamber 200 and the semiconductor silicon wafers inside the semiconductor process chamber 200.

[0037] like Figures 1 to 4 As shown, the partition 120 may specifically include a first partition 121, a second partition 122, and a first float 123. The first partition 121 is disposed in the upper space of the housing 110, and the edge of the first partition 121 is attached to the inner wall of the housing 110. The lower edge of the first partition 121 is spaced apart from the bottom plate 1161. The second partition 122 is disposed close to the bottom plate 1161 and is slidably connected to the first partition 121. Thus, the overall size of the first partition 121 and the second partition 122 can be changed by the relative sliding of the second partition 122 and the first partition 121, so as to adjust the spacing distance between the lower edge of the second partition 122 (the edge of the second partition 122 close to the bottom plate 1161) and the bottom plate 1161. The sliding connection between the first partition 121 and the second partition 122 can be achieved by the cooperation of a sliding groove and a sliding rail, or by setting pulleys on the first partition 121 or the second partition 122 to achieve relative sliding between the first partition 121 and the second partition 122.

[0038] When the waste liquid discharge volume is large, the second partition 122 can be slid upward, increasing the gap between the lower edge of the second partition 122 and the bottom plate 1161, thereby increasing the flow area and allowing the waste liquid to quickly pass under the second partition 122 and enter the second space 112. When the waste liquid discharge volume is small, the second partition 122 can be slid downward, reducing the gap between the lower edge of the second partition 122 and the bottom plate 1161, ensuring that the lower edge of the second partition 122 is always below the liquid surface to form a liquid seal structure.

[0039] The relative sliding of the second partition 122 and the first partition 121 can be manually controlled, or it can be controlled by a drive mechanism such as a motor or cylinder. In one optional embodiment of this application, such as... Figure 4As shown, a first float 123 can be provided near the bottom plate 1161 of the second partition 122. The first float 123 can be made of a material with low density or can be hollow, as long as it can float on the liquid surface. The shape of the first float 123 can be spherical, cuboid, cube, etc., and the connection method between the first float 123 and the second partition 122 can be adhesive, snap-fit, etc.

[0040] Because the first float 123 can float on the liquid surface, its position can change with the liquid level in the tank 110. When the waste liquid discharge is large, the liquid level in the tank 110 is high, the first float 123 rises, and simultaneously drives the second partition 122 to slide upward, increasing the distance between the lower edge of the second partition 122 and the bottom plate 1161. When the waste liquid discharge is small, the liquid level in the tank 110 is low, the first float 123 descends, and simultaneously drives the second partition 122 to slide downward, decreasing the distance between the lower edge of the second partition 122 and the bottom plate 1161. The sliding direction of the second partition 122 can be vertical or at a certain angle to the vertical direction.

[0041] With the above-described structure of the partition 120, the first float 123 can control the gap between the lower edge of the second partition 122 and the bottom plate 1161 in real time according to the amount of waste liquid discharged. While ensuring the efficiency of waste liquid discharge, it can also keep the lower edge of the second partition 122 below the liquid surface, thereby improving the stability of the liquid seal.

[0042] like Figures 1 to 4 As shown, to constrain the upward and downward sliding process of the second partition 122, the partition 120 may further include a first guide portion 124. Since the side of the second partition 122 facing away from the first partition 121 lacks support and restraint, the first guide portion 124 can be disposed on the side of the second partition 122 facing away from the first partition 121. The first guide portion 124 itself can be fixed to the inner wall of the housing 110. By utilizing the guiding cooperation between the second partition 122 and the first guide portion 124, the stability of the upward and downward sliding process of the second partition 122 can be improved. The guiding cooperation between the second partition 122 and the first guide portion 124 can be a sliding cooperation between a groove and a slider, or a sliding cooperation between a bushing and a shaft. For example, a groove can be provided on one of the second partition 122 and the first guide portion 124, and a slider can be provided on the other. The slider is embedded in the groove and slidably connected to the groove. By utilizing the limiting and guiding effect of the groove and the slider, the second partition 122 can slide stably.

[0043] Furthermore, to ensure that the lower edge of the second partition 122 can always extend below the liquid surface to form a stable liquid seal structure, when setting the first float 123, a certain space can be reserved between the first float 123 and the lower edge of the second partition 122, so that the lower edge of the second partition 122 can protrude from the first float 123. When the first float 123 floats above the liquid surface, the lower edge of the second partition 122 can still stably extend below the liquid surface.

[0044] The above solution can solve the problem of waste gas backflow into the semiconductor process chamber 200. However, there is also a risk of backflow during the waste liquid discharge process. Specifically, the plant drainage pipeline connects to multiple semiconductor process chambers 200 to collect and treat the waste liquid discharged from these chambers. If the plant drainage pipeline becomes blocked, the waste liquid will accumulate in the plant drainage pipeline and the second space 112. If the level of the accumulated waste liquid is higher than the exhaust port 115, it can easily enter the plant exhaust pipeline through the exhaust port 115, causing losses.

[0045] Based on the above situation, such as Figures 1 to 4 As shown, the fluid discharge device 100 may further include a third partition 190 and a sealing structure. The third partition 190 can be placed parallel to the liquid surface. The third partition 190 is connected to the partition 120 and the inner wall of the housing 110 respectively, and divides the second space 112 into a first subspace 1121 and a second subspace 1122. The first subspace 1121 is located above the second subspace 1122. The housing 110 corresponding to the first subspace 1121 is provided with an exhaust port 115, and the housing 110 corresponding to the second subspace 1122 is provided with a drain port 114.

[0046] The bottom of the first space 111 is connected to the bottom of the second subspace 1122. Waste liquid can flow from the first space 111 into the second subspace 1122 and be discharged into the plant drainage pipeline through the drain port 114. The sealing structure is located in the second subspace 1122.

[0047] The third partition 190 is provided with a flow port 191. The first subspace 1121 and the second subspace 1122 are connected through the flow port 191. Exhaust gas can enter the second subspace 1122 from the first space 111, and then enter the first subspace 1121 through the flow port 191, before being discharged into the plant exhaust pipeline through the exhaust port 115. If the liquid level in the second subspace 1122 rises, to prevent waste liquid from entering the first subspace 1121 through the flow port 191 and flowing back into the plant exhaust pipeline, a sealing structure can be used to block the flow port 191. The sealing structure can be a valve body, a gasket, a cover plate, etc., as long as it can block the flow port 191 and prevent waste liquid from entering the first subspace 1121 through the flow port 191.

[0048] In one optional embodiment of this application, the sealing structure may include a second float 192, which is disposed within the second subspace 1122 and is capable of floating on the liquid surface of the second subspace 1122. The shape of the second float 192 may be spherical, cuboid, cube, etc. When the second float 192 and the third partition 190 are in a first relative position, the outlet 191 is in an open state, and there is a gap between the second float 192 and the third partition 190 for gas to pass through. When the second float 192 and the third partition 190 are in a second relative position, the second float blocks the outlet 191, so that the outlet 191 is in a closed state, which can prevent waste liquid from entering the first subspace 1121 from the outlet.

[0049] In practical applications, when the liquid level in the second subspace 1122 is low, the position of the second float 192 is also low, and there is a gap between the second float 192 and the third baffle 190 for gas to pass through. When the liquid level in the second subspace 1122 rises, the second float 192 rises until it blocks the overflow port 191. If the plant drain pipe is blocked, the waste liquid will converge in the plant drain pipe and the second subspace 1122. The converged waste liquid will raise the second float 192, causing the overflow port 191 to be closed, thereby preventing the waste liquid from further intruding into the first subspace 1121, and thus preventing the waste liquid from entering the plant exhaust pipe from the exhaust port 115.

[0050] like Figure 4 As shown, during the upward movement of the second float 192, in order to ensure accurate docking between the second float 192 and the outlet 191, the fluid discharge device 100 may further include a second guide portion 193. The second guide portion 193 is located within the second subspace 1122 and is connected to the inner wall of the housing 110 and the third partition 190, respectively. The second guide portion 193 forms a guide space, which is connected to the outlet 191. The second float 192 is located within the guide space. During the rise and fall of the liquid level, the second float 192 can rise and sink according to a preset path under the action of the liquid level and the guide space, thereby improving the accuracy and stability of docking between the second float 192 and the outlet 191.

[0051] The second guide portion 193 can be a hollow cylindrical structure, cage structure, etc. In an optional embodiment of this application, the second guide portion 193 can include at least three guide rods 1931. The three guide rods 1931 are respectively connected to the inner wall of the housing 110 and the third partition 190 to achieve positioning and installation. The guide rods 1931 can also be connected to the third partition 190 to further improve the stability of the installation. The three guide rods 1931 are parallel to each other and form the aforementioned guide space. The three guide rods 1931 can limit the second float 192, causing it to float and sink according to a preset path. Since the three guide rods 1931 are spaced relatively far apart, they will not obstruct the normal venting and drainage process. In addition, the number of guide rods 1931 can also be four, five, etc., which can be selected according to the size of the second float 192.

[0052] The above solution can solve the problem of waste liquid flowing back into the plant exhaust pipe. However, if the liquid level of the accumulated waste liquid is higher than the first fluid inlet 113, it is easy to flow back into the semiconductor process chamber 200 through the first fluid inlet 113, causing contamination to the components and semiconductor silicon wafers in the semiconductor process chamber 200.

[0053] Based on the above situation, such as Figures 3 to 9 As shown, the fluid discharge device 100 may further include a baffle mechanism 130, which is disposed within the first space 111 and rotatably connected to the side wall of the housing 110. The baffle mechanism 130 is positioned near the first fluid inlet 113. The baffle mechanism 130 and the side wall of the housing 110 can be connected via a rotating shaft or a flexible connector, as long as relative rotation between the baffle mechanism 130 and the housing 110 is possible. This embodiment does not limit the specific connection. The baffle mechanism 130 has a first position and a second position, and can switch between the first and second positions by rotating relative to the side wall of the housing 110.

[0054] When the baffle mechanism 130 is in the first position, it engages with the side of the first fluid inlet 113 closest to the first space 111, thus closing the first fluid inlet 113. In specific scenarios, when there is no need to discharge waste gas or waste liquid, the baffle mechanism 130, under its own gravity, is in the first position, closing the first fluid inlet 113 and preventing waste liquid from flowing back into the semiconductor process chamber 200 through the first fluid inlet 113. Alternatively, if the plant drain pipe is blocked, the waste liquid collected in the drain pipe will flow back into the tank 110 through the drain port 114. If the waste liquid level is higher than the baffle mechanism 130, the waste liquid will push against the baffle mechanism 130 towards the side of the first fluid inlet 113, thus placing the baffle mechanism 130 in the aforementioned first position. Due to the obstruction of the baffle mechanism 130, the waste liquid cannot flow back into the semiconductor process chamber 200 through the first fluid inlet 113.

[0055] When the baffle mechanism 130 is in the second position, there is a gap between the baffle mechanism 130 and the first fluid inlet 113 for fluid to pass through. In a specific scenario, when waste liquid and waste gas are discharged through the fluid discharge port 210 and the first fluid inlet 113, the waste liquid and waste gas exert a certain thrust on the baffle mechanism 130, thereby creating a gap between the baffle mechanism 130 and the first fluid inlet 113, allowing the waste liquid and waste gas to pass through smoothly.

[0056] Furthermore, such as Figures 4 to 9 As shown, the baffle mechanism 130 may include a baffle body 131, a shaft portion 132, and a mounting bracket 133. The size of the baffle body 131 matches the size of the first fluid inlet 113 so that the baffle body 131 can completely cover the first fluid inlet 113. Mounting bracket 133 is used to mount baffle body 131 to the side wall of housing 110. Shaft portion 132 is provided on one side of baffle body 131, and both ends of shaft portion 132 protrude from the side of baffle body 131. Mounting bracket 133 is provided on the side wall of housing 110. Mounting bracket 133 is provided with first mounting groove 1331 and second mounting groove 1332. First mounting groove 1331 and second mounting groove 1332 are respectively located on both sides of first fluid inlet 113. Both ends of shaft portion 132 are respectively provided in first mounting groove 1331 and second mounting groove 1332. Shaft portion 132 is rotatably connected to first mounting groove 1331 and second mounting groove 1332 respectively, so that baffle body 131 can be engaged with first fluid inlet 113 by rotation or have a certain gap.

[0057] like Figures 4 to 9As shown, to prevent the baffle body 131 from detaching from the mounting bracket 133, the baffle mechanism 130 may further include a first limiting member 134 and a second limiting member 135. The first limiting member 134 is disposed in the opening of the first mounting groove 1331, and the second limiting member 135 is disposed in the opening of the second mounting groove 1332, thereby limiting both ends of the shaft portion 132 and making it difficult for the baffle body 131 to detach from the mounting bracket 133. The first limiting member 134 and the second limiting member 135 may be screws, clips, rivets, etc.

[0058] In some alternative embodiments, such as Figures 2 to 4 As shown, the housing 110 may include a housing body 116 and a cover plate 117. The cover plate 117 covers the side of the housing body 116 with an opening. The cover plate 117 and the housing 110 can be fixed by bolts, snap-fit, riveting, or other methods. The partition 120 is connected to the side wall of the housing body 116 and the cover plate 117 respectively. The first fluid inlet 113 is located on the housing body 116 corresponding to the first space 111. The drain port 114 and the exhaust port 115 are both located on the housing body 116 corresponding to the second space 112.

[0059] In addition, regarding the structure of the housing body 116, such as Figures 2 to 4 As shown, the main body 116 of the enclosure may further include a bottom plate 1161 and side plates 1162. The bottom plate 1161 is connected to the cover plate 117 through the side plates 1162. The first fluid inlet 113, the drain outlet 114, and the vent outlet 115 are all located on the side plates 1162. Taking a rectangular enclosure 110 as an example, the main body 116 of the enclosure includes a bottom plate 1161 and four side plates 1162. The first fluid inlet 113, the drain outlet 114, and the vent outlet 115 can be respectively located on two opposite side plates 1162 along the length of the enclosure 110.

[0060] like Figure 3 As shown, in order to improve the sealing performance of the enclosure 110, a sealing gasket 140 can be provided between the enclosure body 116 and the cover plate 117. The sealing gasket 140 can be a silicone sealing gasket, a rubber sealing gasket, etc.

[0061] In semiconductor drying processes, a vacuum environment is created within the semiconductor process chamber 200 to enhance the drying effect. Based on this, in one optional embodiment of this application, such as... Figures 1 to 4As shown, the fluid discharge device 100 may further include a vacuum pump 150. A second fluid inlet 118 is provided on the housing 110 corresponding to the second space 112. The inlet and outlet of the vacuum pump 150 are respectively connected to the fluid discharge port 210 and the second fluid inlet 118. On one hand, the vacuum pump 150 can extract waste gas from the semiconductor process chamber 200 and discharge it through the second fluid inlet 118 into the second space 112 of the housing 110, and then discharge it to the plant exhaust pipeline through the exhaust port 115. On the other hand, when there is residual waste liquid in the semiconductor process chamber 200, the vacuum pump 150 can also discharge the waste liquid through the second fluid inlet 118 into the second space 112 of the housing 110, and then discharge it to the plant drainage pipeline through the drain port 114. Furthermore, the inlet and outlet of the vacuum pump 150 can be connected to the fluid discharge port 210 and the second fluid inlet 118 through pipes, respectively.

[0062] The second fluid inlet 118 can be opened on the side plate 1162 of the housing body 116 or on the cover plate 117. In this embodiment, the second fluid inlet 118 is located on the cover plate 117, which can reduce interference with the first fluid inlet 113, the drain port 114 and the exhaust port 115, and make reasonable use of the space of the housing 110.

[0063] like Figures 1 to 4 As shown, to reduce the difficulty of connecting the fluid discharge device 100 with the semiconductor process chamber 200 and the plant piping, pipe connection flanges 160 can be installed at the first fluid inlet 113, the second fluid inlet 118, the drain port 114, and the exhaust port 115, thereby achieving communication between the two parts. The pipe connection flanges 160 can be installed on the housing 110 by welding, bonding, bolting, or other methods.

[0064] like Figure 1 As shown, to facilitate precise control of the discharge process of waste gas and waste liquid, a first valve 170 can be installed on the pipeline between the fluid discharge port 210 and the first fluid inlet 113, and a second valve 180 can be installed on the pipeline between the inlet of the vacuum pump 150 and the first fluid inlet 113. The first valve 170 and the second valve 180 can be manual valves or solenoid valves. The first valve 170 is used to control the opening or closing of the pipeline between the fluid discharge port 210 and the first fluid inlet 113, and the second valve 180 is used to control the opening or closing of the pipeline between the fluid discharge port 210 and the second fluid inlet 118.

[0065] Based on the actual application scenario, after the cleaning process is completed, the cleaning waste liquid needs to be discharged through the fluid discharge port 210 and the first fluid inlet 113. At this time, the first valve 170 can be opened and the second valve 180 can be closed at the same time. After the cleaning waste liquid is discharged, a vacuum environment needs to be generated in the semiconductor process chamber 200 to facilitate the subsequent drying process. Therefore, the first valve 170 can be closed, the second valve 180 can be opened, and the vacuum pump 150 can be started to run at the same time.

[0066] To facilitate the installation and fixation of the enclosure 110, a mounting part 119 can be provided at the bottom of the enclosure 110. The mounting part 119 can specifically be a mounting leg, mounting plate, etc. For example, protruding mounting plates are provided around the bottom of the enclosure 110, and through holes are provided on the mounting plates. Bolts or other fasteners can be used to fix the enclosure 110 to a bearing surface to achieve stable installation of the enclosure 110. The bearing surface can be the ground, a machine table, etc.

[0067] Please refer to Figures 1 to 9 This application also discloses a semiconductor process apparatus, which may include a semiconductor process chamber 200 and the aforementioned fluid discharge device 100. The semiconductor process chamber 200 is provided with a fluid discharge port 210, which is connected to a first fluid inlet 113. Furthermore, the semiconductor process chamber 200 may include a chamber body 220 and a process tank 230 disposed inside the chamber body 220. The process tank 230 has an open design, and a drain hole is provided below the process tank 230. The drain hole is also provided with a drain valve 231 for controlling the opening or closing of the drain hole.

[0068] In conjunction with specific process steps:

[0069] (1) Close the second valve 180 and the drain valve 231. The liquid required for semiconductor cleaning is filled into the process tank 230 through the liquid inlet on the process tank 230.

[0070] (2) When the liquid in the process tank 230 is full, a small amount of liquid continuously overflows into the main body of the chamber 220 and is discharged from the fluid discharge port 210 at the bottom of the main body of the chamber 220. The first valve 170 is opened, and the liquid flows into the first space 111 of the box 110 through the first valve 170 and the first fluid inlet 113. After being gathered, it is discharged to the plant drainage pipeline through the second space 112 and the drain port 114.

[0071] (3) When the cleaning process is completed, the drain valve 231 at the bottom of the process tank 230 is opened, and the liquid is quickly discharged from the process tank 230 into the main body of the chamber 220 and discharged from the fluid discharge port 210 at the bottom of the main body of the chamber 220. The liquid flows into the first space 111 of the box 110 through the first valve 170 and the first fluid inlet 113. The liquid level in the first space 111 rises, the first float 123 floats up and drives the second partition 122 to slide up, the flow area increases, the liquid quickly enters the second space 112, and is then discharged to the plant drainage pipeline through the drain port 114.

[0072] (4) After the liquid in the process tank 230 is basically drained, close the drain valve 231 and the first valve 170, open the second valve 180, and at the same time turn on the vacuum pump 150 to extract the small amount of residual liquid and gas in the main body of the chamber 220. The gas enters the second space 112 from the second fluid inlet 118 of the box 110, and is discharged to the plant pipeline through the exhaust port 115 and the drain port 114 respectively.

[0073] As described above, the fluid discharge device 100 disclosed in this application improves upon related technologies. When the semiconductor process chamber 200 discharges waste gas and waste liquid into the housing 110 through the first fluid inlet 113, the waste liquid will collect at the bottom of the housing 110, and the lower edge of the partition 120 will extend into the waste liquid, thereby forming a liquid seal between the plant exhaust pipe and the semiconductor process chamber 200. If the plant exhaust pipe is under normal negative pressure, the waste gas can still be discharged into the plant exhaust pipe through the first fluid inlet 113, the first space 111, the lower edge of the partition 120, the second space 112, and the exhaust port 115 under negative pressure. If the plant exhaust pipe is blocked, the liquid seal of the partition 120 can prevent the waste gas in the plant exhaust pipe from flowing back into the semiconductor process chamber 200, thereby avoiding the problem of waste gas backflow causing contamination to the semiconductor process chamber 200 and the semiconductor silicon wafers inside the semiconductor process chamber 200.

[0074] The above embodiments of this application focus on describing the differences between the various embodiments. As long as the different technical features between the various embodiments are not contradictory, they can be combined to form more specific embodiments. For the sake of brevity, they will not be described in detail here.

[0075] The embodiments of this application have been described above with reference to the accompanying drawings. However, this application is not limited to the specific embodiments described above. The specific embodiments described above are merely illustrative and not restrictive. Those skilled in the art can make many other forms under the guidance of this application without departing from the spirit and scope of the claims, and all of these forms are within the protection scope of this application.

Claims

1. A fluid exhaust apparatus applied to a semiconductor process chamber (200), characterized in that, The fluid discharge device (100) comprises a box (110) and a partition (120); The partition (120) is arranged in the box (110) and separates the box (110) into a first space (111) and a second space (112) which are in communication with each other, the first space (111) is provided with a first fluid inlet (113) on the box (110) corresponding to the first space (111), the first fluid inlet (113) is used for communicating with a fluid discharge port (210) of the semiconductor process chamber (200), and the second space (112) is provided with a liquid discharge port (114) and an exhaust port (115) on the box (110) corresponding to the second space (112); The exhaust port (115) is higher than the liquid discharge port (114), the liquid discharge port (114) is higher than a bottom plate (1161) of the box (110), a lower edge of the partition (120) is arranged in a spaced manner with the bottom plate (1161), and at least part of the partition (120) is movable up and down in the box (110).

2. The fluid discharge device of claim 1, wherein The partition (120) comprises a first partition plate (121), a second partition plate (122) and a first floating body (123); An upper edge of the first partition plate (121) is connected with an inner wall of the box (110), and a lower edge of the first partition plate (121) is arranged in a spaced manner with the bottom plate (1161), the second partition plate (122) is slidably connected with the first partition plate (121), the first floating body (123) is connected to a position of the second partition plate (122) close to the bottom plate (1161), and the first floating body (123) is used for driving the second partition plate (122) to slide relative to the first partition plate (121) according to the height of the liquid level in the box (110).

3. The fluid discharge device of claim 2, wherein, The partition (120) further comprises a first guide portion (124), the first guide portion (124) is arranged on a side of the second partition plate (122) away from the first partition plate (121) and is fixedly connected with the box (110), one of the second partition plate (122) and the first guide portion (124) is provided with a sliding groove, and the other is provided with a sliding block, the sliding block is slidably connected with the sliding groove, so that the second partition plate (122) slides relative to the first partition plate (121).

4. The fluid discharge device of claim 2, wherein An edge of the second partition plate (122) close to the bottom plate (1161) protrudes from the first floating body (123).

5. The fluid discharge device of claim 1, wherein The fluid discharge device (100) further comprises a third partition plate (190) and a sealing structure, the third partition plate (190) is connected with the partition (120) and the inner wall of the box (110) respectively, and the second space (112) is divided into a first subspace (1121) and a second subspace (1122), the first subspace (1121) is located above the second subspace (1122), the first subspace (1121) is provided with the exhaust port (115) on the box (110) corresponding to the first subspace (1121), the second subspace (1122) is provided with the liquid discharge port (114) on the box (110) corresponding to the second subspace (1122), and the bottom of the first space (111) and the bottom of the second subspace (1122) are in communication with each other. The third partition plate (190) is provided with a flow port (191), the first subspace (1121) and the second subspace (1122) are communicated through the flow port (191), and the sealing structure is arranged in the second subspace (1122), in the case that the liquid level in the second subspace (1122) rises, the sealing structure blocks the flow port (191).

6. The fluid discharge device of claim 5, wherein The sealing structure comprises a second floating body (192), the second floating body (192) is arranged in the second subspace (1122), in the case that the second floating body (192) and the third partition plate (190) are in a first relative position, the flow port (191) is in an open state, and in the case that the second floating body (192) and the third partition plate (190) are in a second relative position, the flow port (191) is in a closed state.

7. The fluid discharge device of claim 6, wherein The fluid discharge device (100) further comprises a second guide portion (193), the second guide portion (193) is arranged in the second subspace (1122) and connected with the third partition plate (190) and the inner wall of the box (110) respectively, the second guide portion (193) surrounds a guide space, the guide space is communicated with the flow port (191), and the second floating body (192) is arranged in the guide space.

8. The fluid discharge device of claim 7, wherein The second guide portion (193) comprises at least three guide rods (1931), the three guide rods (1931) are connected with the third partition plate (190) and the inner wall of the box (110) respectively, and surround the guide space.

9. The fluid discharge device of claim 1, wherein, The fluid discharge device (100) further comprises a baffle mechanism (130), the baffle mechanism (130) is arranged in the first space (111) and rotationally connected with the side wall of the box (110), the baffle mechanism (130) has a first position and a second position; When the baffle mechanism (130) is in the first position, the baffle mechanism (130) is buckled with the side of the first fluid inlet (113) close to the first space (111), and when the baffle mechanism (130) is in the second position, the baffle mechanism (130) and the first fluid inlet (113) have a gap for fluid to pass through.

10. The fluid discharge device of claim 9, wherein, The baffle mechanism (130) comprises a baffle body (131), a shaft portion (132), a mounting bracket (133), a first limiting piece (134) and a second limiting piece (135); The shaft portion (132) is arranged at one side of the baffle body (131), and both ends of the shaft portion (132) protrude from the side of the baffle body (131), the mounting bracket (133) is arranged on the side wall of the box body (110), the mounting bracket (133) is provided with a first mounting groove (1331) and a second mounting groove (1332), the first mounting groove (1331) and the second mounting groove (1332) are respectively arranged on both sides of the first fluid inlet (113), both ends of the shaft portion (132) are respectively arranged in the first mounting groove (1331) and the second mounting groove (1332) and are rotatably connected with the first mounting groove (1331) and the second mounting groove (1332), the first limiting piece (134) is arranged in the slot of the first mounting groove (1331), and the second limiting piece (135) is arranged in the slot of the second mounting groove (1332).

11. The fluid discharge device of claim 1, wherein The box body (110) comprises a box body (116) and a cover plate (117), the cover plate (117) is arranged on the side of the box body (116) provided with an opening, the partition portion (120) is connected with the side wall of the box body (116) and the cover plate (117), the first fluid inlet (113) is arranged on the box body (116) corresponding to the first space (111), and the liquid discharge port (114) and the gas discharge port (115) are both arranged on the box body (116) corresponding to the second space (112).

12. The fluid discharge device of claim 11, wherein, The box body (116) comprises the bottom plate (1161) and the side plate (1162), the bottom plate (1161) is connected with the cover plate (117) through the side plate (1162), and the first fluid inlet (113), the liquid discharge port (114) and the gas discharge port (115) are all arranged on the side plate (1162).

13. The fluid discharge device of claim 11, wherein, The fluid discharge device (100) further comprises a vacuum pump (150), a second fluid inlet (118) is arranged on the cover plate (117) corresponding to the second space (112), and the inlet and the outlet of the vacuum pump (150) are respectively communicated with the fluid discharge port (210) and the second fluid inlet (118); A first valve (170) is arranged on the pipeline between the fluid discharge port (210) and the first fluid inlet (113), and a second valve (180) is arranged on the pipeline between the inlet of the vacuum pump (150) and the first fluid inlet (113).

14. A semiconductor process apparatus characterized by comprising: The fluid discharge device (100) comprises a semiconductor process chamber (200) and the fluid discharge device (100) of any one of claims 1-13, and the semiconductor process chamber (200) is provided with a fluid discharge port (210), and the fluid discharge port (210) is communicated with the first fluid inlet (113).

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