Electronic paper structure and method of making the same

Abstract

An electronic paper structure and a manufacturing method thereof, the electronic paper structure comprising a first electrode layer, a composite insulating layer and ink; the composite insulating layer is stacked on the first electrode layer, and the composite insulating layer comprises an insulating layer and a plurality of deformation structures; the insulating layer comprises a first surface facing away from the first electrode layer, and the first surface is concavely provided with a plurality of grooves; the plurality of deformation structures are one-to-one correspondingly accommodated in the plurality of grooves; the ink is arranged on the composite insulating layer; and in the case that the first electrode layer is electrified, the deformation structures expand and deform and extend out of the first surface. The electronic paper structure can solve the aggregation phenomenon of the ink in the shrinkage process.

Description

Technical Field

[0001] This application relates to the field of display device technology, specifically to an electronic paper structure and its manufacturing method. Background Technology

[0002] Electro-wetting electronic paper is a novel type of display device. It utilizes the effect of interfacial charge on interfacial tension to alter the contact angle between charged ink droplets and the contact surface, causing the droplets to contract and expand, thus achieving the function of an optical switch. When no driving voltage is applied to the pixel electrode, black ink spreads uniformly on the insulating hydrophobic layer, and the pixel unit appears completely dark. When a driving voltage is applied to the pixel electrode, the ink contracts and shrinks to one side into a droplet shape, at which point the pixel unit appears white, resembling a reflective substrate.

[0003] However, ink inevitably aggregates during the shrinkage process, eventually causing the aggregated ink to form dark spots within pixels, affecting display quality. Furthermore, the location of ink aggregation is random, not fixed. Therefore, resolving this ink aggregation issue during shrinkage becomes crucial. Summary of the Invention

[0004] The purpose of this application is to provide an electronic paper structure and its manufacturing method to solve the problem of ink aggregation during the shrinkage process.

[0005] To achieve the objectives of this application, the following technical solution is provided:

[0006] In a first aspect, the present invention provides an electronic paper structure, comprising a first electrode layer, a composite insulating layer, and ink; wherein, the composite insulating layer is stacked on the first electrode layer, the composite insulating layer comprising an insulating layer and a plurality of deformable structures, the insulating layer comprising a first surface facing away from the first electrode layer, the first surface having a plurality of recesses, and the plurality of deformable structures being housed one-to-one in the plurality of recesses; the ink is disposed on the composite insulating layer; when the first electrode layer is energized, the deformable structures expand and deform and extend out of the first surface.

[0007] In some embodiments, when the first electrode layer is energized, the portion of the deformable structure extending beyond the first surface is an upwardly protruding curved surface.

[0008] In some embodiments, the deformable structure includes a deformable layer and a memory layer connected together. The deformable layer is housed in the groove. When the first electrode layer is not energized, the memory layer is housed in the groove. When the first electrode layer is energized, the deformable layer expands and deforms along the thickness direction, and the memory layer extends out of the groove.

[0009] In some embodiments, the deformation layer includes a first deformation layer and a second deformation layer connected together, the first deformation layer including a first material and the second deformation layer including a second material, the first material expanding when heated and the second material contracting when heated.

[0010] In some embodiments, the deformation layer includes a third deformation layer comprising the second material, the second deformation layer being connected to the memory layer, the first deformation layer being connected to the side of the second deformation layer opposite to the memory layer, and the third deformation layer being connected to the side of the first deformation layer opposite to the memory layer.

[0011] In some embodiments, the memory layer includes a first cross-linked region and a second cross-linked region, wherein the degree of cross-linking of the first cross-linked region is greater than that of the second cross-linked region, and the degree of thermal deformation of the first cross-linked region is less than that of the second cross-linked region; the first cross-linked region is wrapped around the outer periphery of the second cross-linked region along the circumferential direction of the memory layer.

[0012] In some embodiments, when the first electrode layer is energized, the deformable structure includes a first bump and a plurality of second bumps, the first bump protruding from the first surface, the plurality of second bumps connecting to the first bump, and the plurality of second bumps protruding from the surface of the first bump.

[0013] In some embodiments, the first electrode layer includes a plurality of energized regions arranged sequentially along a first direction; when the first electrode layer is energized, the plurality of energized regions are energized sequentially along the first direction, the first direction intersecting the thickness direction of the composite insulating layer.

[0014] In a second aspect, the present invention provides a method for manufacturing an electronic paper structure, the method being used to manufacture an electronic paper structure as described in any one of the embodiments of the first aspect, the method comprising: setting an insulating layer on a first electrode layer and forming a groove on the insulating layer; setting a deformation layer and a memory layer in the groove to obtain a composite insulating layer; and setting ink on the composite insulating layer.

[0015] In some embodiments, the memory layer is disposed on the deformation layer, including: coating the material of the memory layer onto the deformation layer to obtain a preform layer; performing crosslinking and etching treatment on the preform layer to obtain the memory layer; and performing thermomechanical training on the memory layer; wherein the memory layer includes a first crosslinking region and a second crosslinking region, the degree of crosslinking of the first crosslinking region is greater than the degree of crosslinking of the second crosslinking region, and the degree of thermal deformation of the first crosslinking region is less than the degree of thermal deformation of the second crosslinking region.

[0016] In some embodiments, the prefabricated layer is cross-linked, including: setting a mask on the prefabricated layer, wherein the transmittance of the mask is not all the same; subjecting the prefabricated layer to ultraviolet exposure treatment to cross-link the material of the memory layer; wherein, along the circumference of the memory layer, the first cross-linked region is wrapped around the outer periphery of the second cross-linked region.

[0017] In some embodiments, thermomechanical training of the memory layer includes: heating the memory layer to a first temperature and maintaining the first temperature; placing a template on the memory layer and applying pressure to the template; maintaining the applied pressure and cooling the memory layer to a second temperature before removing it from the template; wherein the first temperature is greater than the second temperature.

[0018] This invention provides an electronic paper structure with a composite insulating layer. Compared with existing electronic paper structures, this structure has multiple deformation structures on the insulating layer. When the first electrode layer is energized, the deformation structures expand and deform due to the electrothermal effect. The multiple deformation structures bulge upward to extend out of the first surface, forming multiple protrusions on the first surface. The surface of the composite insulating layer forms a microstructure similar to the surface of a lotus leaf. The protrusions can significantly increase the surface area of ​​the first surface, thereby increasing the contact angle of the ink at the first surface. Residual ink is more likely to form spherical droplets and roll to the edge, thus improving the problem of ink aggregation. Attached Figure Description

[0019] To more clearly illustrate the technical solutions in the embodiments of this application or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained from these drawings without creative effort.

[0020] Figure 1 This is a schematic diagram illustrating the display effects of an electronic paper structure in one embodiment when it is not powered on and when it is powered on.

[0021] Figure 2 This is a cross-sectional schematic diagram of an electronic paper structure in an unpowered state according to one embodiment;

[0022] Figure 3 This is a cross-sectional schematic diagram of an electronic paper structure in an electrically powered state, according to one embodiment.

[0023] Figure 4 This is a cross-sectional schematic diagram of a deformable structure in one embodiment;

[0024] Figure 5This is a cross-sectional schematic diagram of a deformable structure in one embodiment, from an unpowered state to a powered state;

[0025] Figure 6 This is a cross-sectional schematic diagram of a memory layer in an unpowered state according to one implementation method;

[0026] Figure 7 This is a top view of a memory layer in an unpowered state, representing one implementation method.

[0027] Figure 8 This is a cross-sectional schematic diagram of an electronic paper structure in a powered state, according to another embodiment.

[0028] Figure 9 This is a schematic cross-sectional view of the first electrode layer including the energized region in one embodiment;

[0029] Figure 10 This is a flowchart of a method for fabricating an electronic paper structure in another embodiment;

[0030] Figure 11 This is a flowchart of a method for fabricating an electronic paper structure according to one implementation;

[0031] Figure 12 This is a flowchart of step S200 of a method for manufacturing an electronic paper structure according to one embodiment;

[0032] Figure 13 This is a flowchart of step S220 of a method for manufacturing an electronic paper structure according to one embodiment;

[0033] Figure 14 This is a flowchart of step S222 of a method for manufacturing an electronic paper structure according to one embodiment;

[0034] Figure 15 This is a flowchart of step S223 of a method for manufacturing an electronic paper structure according to one implementation.

[0035] Explanation of reference numerals in the attached figures:

[0036] 100 - Electronic paper structure, 10 - First substrate, 20 - First electrode layer, 21 - Current-carrying area, 211 - First current-carrying area, 212 - Second current-carrying area, 213 - Third current-carrying area, 214 - Fourth current-carrying area, 30 - Composite insulating layer, 31 - Insulating layer, 311 - First surface, 312 - Groove, 32 - Deformation structure, 321 - Deformation layer, 3211 - First deformation layer, 3212 - Second deformation layer, 3213 - Third deformation layer, 322 - Memory layer, 3221 - First cross-linking area, 3222 - Second cross-linking area, 323 - First bump, 3231 - Arc surface, 324 - Second bump, 40 - Ink, 50 - Conductive liquid, 60 - Pixel wall, 70 - Second electrode layer, 80 - Second substrate, Z - Thickness direction, X - First direction. Detailed Implementation

[0037] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of them. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0038] It should be noted that when a component is said to be "fixed" to another component, it can be directly on the other component or it can be in a middle component. When a component is said to be "connected" to another component, it can be directly connected to the other component or it may be in a middle component.

[0039] Unless otherwise defined, all technical and scientific terms used in this application have the same meaning as commonly understood by one of ordinary skill in the art to which this application pertains. The terminology used in the specification of this application is for the purpose of describing particular embodiments only and is not intended to be limiting of the application. The term "and / or" as used in this application includes any and all combinations of one or more of the associated listed items.

[0040] The following detailed description of some embodiments of this application is provided in conjunction with the accompanying drawings. Unless otherwise specified, the following embodiments and features can be combined with each other.

[0041] Electrowetting electronic paper structures refer to the phenomenon where applying a voltage between upper and lower substrates alters the surface tension between a liquid and a solid, thereby changing the contact angle and causing the droplet to deform and shift. Electrowetting electronic paper structures can be specifically used in the fabrication of electronic paper.

[0042] Electrowetting electronic paper structures refer to the phenomenon where applying a voltage between upper and lower substrates alters the surface tension between a liquid and a solid, thereby changing the contact angle and causing the droplet to deform and shift. Electrowetting electronic paper structures can be specifically used in the fabrication of electronic paper.

[0043] In some embodiments, in the prior art, a conventional electrowetting electronic paper structure, from bottom to top along the thickness direction, includes: a lower substrate, a lower working electrode, a hydrophobic insulating layer, ink, pixel walls, a conductive liquid, an upper working electrode, and an upper protective substrate. The lower substrate, lower working electrode, and hydrophobic insulating layer are connected sequentially; the hydrophobic insulating layer and the upper working electrode are spaced apart; the ink, pixel walls, and conductive liquid are disposed between the hydrophobic insulating layer and the upper working electrode; ink is present between the pixel walls, and the space between the pixel walls constitutes a pixel unit. Please refer to [reference needed]. Figure 1 (1) of.

[0044] However, please refer to Figure 1 (2) When a driving voltage is applied to the pixel electrodes (lower working electrode and upper working electrode) of the conventional electrowetting electronic paper structure, ink inevitably aggregates during the shrinkage process, eventually causing the aggregated ink to form dark spots in the pixel. Figure 1 As shown in (2)A), the ink aggregation affects the display effect, and the location of ink aggregation is also random, not fixed. Therefore, how to solve the ink aggregation phenomenon during the shrinkage process has become the key. Based on this technical problem, the present invention provides an electronic paper structure that can solve the ink aggregation phenomenon during the shrinkage process.

[0045] [Electronic Paper Structure]

[0046] For some implementation methods, please refer to Figure 2 and Figure 3 The electronic paper structure 100 includes a first electrode layer 20, a composite insulating layer 30, and ink 40. The composite insulating layer 30 is stacked on the first electrode layer 20 and includes an insulating layer 31 and a plurality of deformable structures 32. The insulating layer 31 includes a first surface 311 facing away from the first electrode layer 20. The first surface 311 is recessed with a plurality of grooves 312, and the plurality of deformable structures 32 are housed in the plurality of grooves 312 in a one-to-one correspondence. The ink 40 is disposed on the composite insulating layer 30. When the first electrode layer 20 is energized, the deformable structures 32 expand and deform and extend out of the first surface 311.

[0047] In a specific embodiment, please refer to Figure 2 and Figure 3The electronic paper structure 100, from bottom to top along the thickness direction Z, includes: a first substrate 10, a first electrode layer 20, a composite insulating layer 30, a pixel wall 60, a second electrode layer 70, and a second substrate 80. The first substrate 10, the first electrode layer 20, and the composite insulating layer 30 are connected sequentially. The composite insulating layer 30 and the second electrode layer 70 are disposed at intervals. Ink 40, the pixel wall 60, and the conductive liquid 50 are disposed between the insulating layer 30 and the second electrode layer 70.

[0048] In a specific embodiment, the side of the insulating layer 31 facing away from the first electrode layer 20 is a first surface 311. A plurality of grooves 312 are formed on the first surface 311, meaning the openings of the grooves 312 are located on the first surface 311. The plurality of grooves 312 are independent of each other, meaning they are not interconnected, and there is a gap between each groove 312. The plurality of grooves 312 are arranged in an array on the first surface 311, meaning they are arranged in multiple rows and columns. In other embodiments, the plurality of grooves 312 may also be arranged in a ring array; or, the plurality of grooves 312 may be randomly arranged on the first surface 311.

[0049] In a specific embodiment, from a top view of the composite insulating layer 30, the groove 312 is quadrilateral in shape, preferably square; the deformable structure 32 is also quadrilateral in shape, preferably square. Optionally, multiple deformable structures 32 are arranged in multiple rows and columns, and from a top view of the composite insulating layer 30, the multiple deformable structures 32 are arranged in a square lattice on the insulating layer 31.

[0050] In a specific embodiment, the composite insulating layer 30 is made of a hydrophobic material, meaning that both the insulating layer 31 and the deformation structure 32 can be made of hydrophobic materials. The deformation structure 32 is also supported by a heat-deformable material, meaning it can deform in response to temperature changes. When the first electrode layer 20 is energized, the deformation structure 32 expands due to the electrothermal effect. Because the circumferential direction of the deformation structure 32 is restricted by the inner wall of the groove 312, the deformation structure 32 expands upwards along the thickness direction Z, protruding from the first surface 311.

[0051] In a specific embodiment, please refer to Figure 2 and Figure 3The electronic paper structure 100 includes an unpowered state and a powered state. In the unpowered state, the electronic paper structure 100 is not energized, so the deformable structure 32 does not deform due to the electrothermal effect, and its surface can be approximated as planar. In the powered state, the electronic paper structure 100 is energized, and the deformable structure 32 deforms due to the electrothermal effect, protruding upwards (towards the second electrode layer 70). Furthermore, because multiple deformable structures 32 protrude upwards, in the powered state, the first surface 311 forms multiple protruding structures, and the surface of the composite insulating layer 30 forms a microstructure similar to the surface of a lotus leaf. These protruding structures significantly increase the contact angle of the first surface 311.

[0052] In a specific embodiment, the deformation of the deformable structure 32 changes depending on whether the electronic paper structure 100 is in an unpowered or powered state, and the deformable structure 32 can switch between expansion and contraction. When the electronic paper structure 100 switches from an unpowered state to a powered state, the deformable structure 32 can expand and extend out of the groove 312. When the electronic paper structure 100 switches from a powered state to an unpowered state, due to the temperature drop, the deformable structure 32 can contract and return to the groove 312.

[0053] This invention provides an electronic paper structure 100 with a composite insulating layer 30. Compared with the electronic paper structure 100 in the prior art, the electronic paper structure 100 has multiple deformation structures 32 on the insulating layer 31. When the first electrode layer 20 is energized, the deformation structures 32 will expand and deform due to the electrothermal effect. The multiple deformation structures 32 protrude upward to extend out of the first surface 311, so that multiple protrusion structures are formed on the first surface 311. The surface of the composite insulating layer 30 forms a microstructure similar to the surface of a lotus leaf. The protrusion structures can significantly increase the surface area of ​​the first surface 311, thereby increasing the contact angle of the ink 40 at the first surface 311. The residual ink 40 is more likely to form spherical droplets and roll to the edge, thereby improving the problem of ink 40 aggregation.

[0054] For some implementation methods, please refer to Figure 2 and Figure 3 When the first electrode layer 20 is energized, the portion of the deformable structure 32 extending beyond the first surface 311 is an upwardly protruding curved surface. Specifically, in the unenergized state, the side of the deformable structure 32 facing away from the first electrode layer 20 is a flat surface. Figure 2 Preferably, the side of the deformable structure 32 facing away from the first electrode layer 20 is flush with the first surface 311.

[0055] In a specific embodiment, when energized, the deformable structure 32 extends beyond the first surface 311, and the side of the deformable structure 32 facing away from the first electrode layer 20 is curved. Figure 3That is, along the thickness direction Z, the cross-sectional shape of the part of the deformable structure 32 extending out of the first surface 311 is an arc shape, and the part of the deformable structure 32 extending out of the first surface 311 has a structure that is high in the middle and low around the edges.

[0056] The present invention improves the problem of ink aggregation by setting the portion of the deformable structure 32 extending from the first surface 311 as an upward-protruding curved surface. This is achieved by setting the portion of the deformable structure 32 extending from the first surface 311 as an upward-protruding curved surface.

[0057] For some implementation methods, please refer to Figure 4 and Figure 5 The deformable structure 32 includes a deformable layer 321 and a memory layer 322 connected to each other. The deformable layer 321 is housed in a groove 312. When the first electrode layer 20 is not energized, the memory layer 322 is housed in the groove 312. When the first electrode layer 20 is energized, the deformable layer 321 expands and deforms along the thickness direction Z, and the memory layer 322 extends out of the groove 312. Specifically, the deformable layer 321 first undergoes longitudinal deformation, making the memory layer 322 higher than the surrounding insulating layer 31. Then, after the memory layer 322 forms a small protrusion, it will not compress the surrounding insulating layer 31.

[0058] In a specific embodiment, the deformation structure 32 includes a deformation layer 321 and a memory layer 322 stacked together. The memory layer 322 is stacked on top of the deformation layer 321, that is, the deformation layer 321 is disposed on the bottom wall of the groove 312, or the deformation layer 321 is connected to the first electrode layer 20. In the unpowered state, both the deformation layer 321 and the memory layer 322 are housed in the groove 312, and the side of the memory layer 322 facing away from the deformation layer 321 is a plane flush with the first surface 311. Figure 5 (1)). Under energized conditions, the deformation layer 321 expands upward along the thickness direction Z, thereby lifting the memory layer 322 out of the groove 312 ( Figure 5 (2)

[0059] In this invention, the deformation structure 32 is configured as a deformation layer 321 and a memory layer 322, and only the deformation layer 321 expands and deforms along the thickness direction Z when energized. This limits the height of the protrusion of the deformation structure 32. After the memory layer 322 extends out of the groove 312, the memory layer 322 does not continue to expand due to the electrothermal effect. This not only avoids the deformation structure 32 from over-extending and blocking the ink 40, but also ensures that the memory layer 322 does not become over-deformed and unable to return to the groove 312.

[0060] In some embodiments, the deformation layer 321 includes a first material and a second material. The first material expands when heated, and the second material contracts when heated. Specifically, the deformation layer 321 is composed of at least two materials in a ratio of a first material to a second material. The first material is a thermally expanding material, meaning it expands when heated; the second material is a thermally contractile material, meaning it contracts when heated.

[0061] In a specific embodiment, conventional thermally expanding materials expand outwards when heated, making it difficult to control the expansion direction. The deformation layer 321 is disposed in the groove 312. If the deformation layer 321 expands laterally, it will compress the inner wall of the groove 312, damaging the insulating layer 31. Therefore, this invention uses a thermally shrinkable material to limit the lateral expansion of the thermally expanding material in the deformation layer 321 composed of two different materials.

[0062] In order to avoid lateral deformation of the material, the present invention combines a first material (thermally expanding material) and a second material (thermally shrinking material) to achieve "directional expansion" in a specific direction, which can suppress the lateral deformation of the overall material and make the deformation layer 321 expand and deform only in the thickness direction Z.

[0063] For some implementation methods, please refer to Figure 4 and Figure 5 The deformation layer 321 includes a first deformation layer 3211 and a second deformation layer 3212 connected together. The first deformation layer 3211 includes a first material, and the second deformation layer 3212 includes a second material. Specifically, the deformation layer 321 includes a first deformation layer 3211 and a second deformation layer 3212 stacked together. The first deformation layer 3211 may be disposed on the second deformation layer 3212, or the second deformation layer 3212 may be disposed on the first deformation layer 3211.

[0064] This invention involves fabricating a first material into a first deformation layer 3211 and a second material into a second deformation layer 3212. When the first deformation layer 3211 undergoes thermal expansion, the second deformation layer 3212 simultaneously generates a lateral contraction force. Since the first deformation layer 3211 and the second deformation layer 3212 are connected, the lateral contraction force generated by the second deformation layer 3212 will act on the first deformation layer 3211. The lateral expansion force of the first deformation layer 3211 and the lateral contraction force of the second deformation layer 3212 cancel each other out, so that the first deformation layer 3211 will not undergo lateral expansion.

[0065] For some implementation methods, please refer to Figure 4 and Figure 5The deformation layer 321 includes a third deformation layer 3213, which includes a second material. The second deformation layer 3212 is connected to the memory layer 322. The first deformation layer 3211 is connected to the side of the second deformation layer 3212 facing away from the memory layer 322. The third deformation layer 3213 is connected to the side of the first deformation layer 3211 facing away from the memory layer 322.

[0066] In a specific embodiment, a second deformation layer 3212 and a third deformation layer 3213 are respectively disposed on opposite sides of the first deformation layer 3211 in the thickness direction Z. Both the second deformation layer 3212 and the third deformation layer 3213 include a second material. Optionally, the second deformation layer 3212 and the third deformation layer 3213 have the same thickness, while the first deformation layer 3211 has a greater thickness than the second deformation layer 3212. The advantage of the larger thickness of the first deformation layer 3211 is that it has a larger volume to undergo longitudinal deformation, while the second deformation layer 3212 has a smaller thickness; even if the second deformation layer 3212 shrinks longitudinally, it will not affect the overall rising height of the deformation layer 321.

[0067] The present invention provides a second deformation layer 3212 and a third deformation layer 3213 on each side of the first deformation layer 3211, and the second deformation layer 3212 and the third deformation layer 3213 are identical, so that the second deformation layer 3212 and the third deformation layer 3213 can simultaneously apply a lateral contraction force, thereby ensuring that the lateral expansion force of the first deformation layer 3211 is offset.

[0068] In some embodiments, the first material includes one or more of polydimethylsiloxane and its derivatives, epoxy resin and its derivatives, and fluorinated polyimide and its derivatives. The second material includes Sc2W3O. 12 ZrW2O8, ZrV2O7, Y2W3O 12 One or more of them.

[0069] For some implementation methods, please refer to Figure 6 and Figure 7 The memory layer 322 includes a first cross-linked region 3221 and a second cross-linked region 3222. The degree of cross-linking of the first cross-linked region 3221 is greater than that of the second cross-linked region 3222, and the degree of thermal deformation of the first cross-linked region 3221 is less than that of the second cross-linked region 3222. Specifically, the memory layer 322 includes an organic cross-linked material, wherein the degree of cross-linking of the organic cross-linked material in the first cross-linked region 3221 is larger, and the degree of cross-linking of the organic cross-linked material in the second cross-linked region 3222 is smaller.

[0070] In a specific embodiment, the organic crosslinking material is an organic polymer, which has an important characteristic parameter: glass transition temperature (Tg, in °C). For polymers, the glass transition temperature is the temperature at which the polymer changes from a glassy state to a highly elastic state. At the glass transition temperature, the specific heat capacity, coefficient of thermal expansion, viscosity, refractive index, free volume, and elastic modulus of the polymer all undergo a sudden change.

[0071] In a specific embodiment, the degree of crosslinking of the organic crosslinked material affects the glass transition temperature by restricting the mobility of polymer chain segments: within the conventional crosslinking range, the higher the degree of crosslinking, the greater the resistance to chain segment movement, and the higher the glass transition temperature (Tg). Therefore, the glass transition temperature of the first crosslinked region 3221 is greater than that of the second crosslinked region 3222. Therefore, at the same temperature, the second crosslinked region 3222 undergoes greater thermal deformation.

[0072] The present invention provides a first crosslinked region 3221 and a second crosslinked region 3222 with different degrees of crosslinking on the memory layer 322, so that when the deformable structure 32 is deformed by heat, the second crosslinked region 3222 with a smaller degree of crosslinking can deform first with the first crosslinked region 3221, thereby forming an upwardly protruding curved surface on the top of the memory layer 322.

[0073] For some implementation methods, please refer to Figure 6 and Figure 7 Along the circumference of the memory layer 322, the first crosslinking region 3221 surrounds the outer periphery of the second crosslinking region 3222. Specifically, the top view shape of the memory layer 322 can be quadrilateral, the second crosslinking region 3222 is located in the middle of the memory layer 322, the first crosslinking region 3221 is located on the outer periphery of the second crosslinking region 3222, and the first crosslinking region 3221 can surround the second crosslinking region 3222.

[0074] By placing the first crosslinking region 3221 on the outer periphery of the second crosslinking region 3222, the present invention can restrict the lateral deformation of the second crosslinking region 3222 using the first crosslinking region 3221, so that the memory layer 322 bulges only in the middle position, such as... Figure 5 As shown in (3).

[0075] In some embodiments, the memory layer 322 may include a first metal layer and a second metal layer, both of which are made of metal but of different metals with different coefficients of thermal expansion. It should be noted that objects expand and contract due to temperature changes, and this expansion capacity is expressed as the change in length caused by a unit temperature change under isobaric conditions, using the coefficient of thermal expansion (unit: 1 / ℃ or ppm / ℃).

[0076] In a specific embodiment, the coefficient of thermal expansion is a physical quantity that characterizes the change in length or volume of an object due to temperature changes. A large coefficient of thermal expansion indicates that the material is more sensitive to temperature changes, and will produce significant volume or size changes when the temperature fluctuates. The different coefficients of thermal expansion of the first metal layer and the second metal layer also indicate that their sensitivity at the same temperature is different, and the volume or size changes produced by the first metal layer and the second metal layer are different when the temperature fluctuates.

[0077] In a specific embodiment, the coefficient of thermal expansion of the second metal layer is greater than that of the first metal layer. Therefore, the second metal layer, located on the upper layer, has a greater deformation capacity. After the electronic paper structure 100 is powered on, both the first and second metal layers bulge upwards due to the electrothermal effect, forming an arched structure. Because the second metal layer has a greater deformation capacity, it can form a larger arched structure.

[0078] For some implementation methods, please refer to Figure 8 When the first electrode layer 20 is energized, the deformable structure 32 includes a first protrusion 323 and a plurality of second protrusions 324. The first protrusion 323 protrudes from the first surface 311, and the plurality of second protrusions 324 are connected to the first protrusion 323, and the plurality of second protrusions 324 protrude from the surface of the first protrusion 323.

[0079] In a specific embodiment, when powered on, the memory layer 322 includes a first protrusion 323 and a second protrusion 324. Under the action of the deformation layer 321, the memory layer 322 extends upward beyond the groove 312, and the portion of the memory layer 322 protruding from the first surface 311 is hemispherical. The first protrusion 323 is the portion of the memory layer 322 protruding from the first surface 311. The first protrusion 323 includes an arcuate surface 3231, which is the upwardly protruding curved surface described in the above embodiment. The second protrusion 324 is connected to the arcuate surface 3231 and protrudes beyond the arcuate surface 3231.

[0080] In a specific embodiment, the portion of the second protrusion 324 protruding from the arcuate surface 3231 is hemispherical. The size of the second protrusion 324 is smaller than the size of the first protrusion 323, that is, the radius of curvature of the second protrusion 324 is smaller than the radius of curvature of the first protrusion 323. It can be understood that the radius of curvature of the first protrusion 323 is larger, therefore the area of ​​the arcuate surface 3231 is larger, and multiple second protrusions 324 can be formed on the arcuate surface 3231. The radius of curvature of the second protrusion 324 is smaller, therefore the second protrusion 324 forms a secondary structure on the first protrusion 323.

[0081] By forming a second protrusion 324 on the first protrusion 323, the present invention can further increase the microstructure on the first protrusion 323, increase the surface area of ​​the first surface 311, and increase the contact angle of the ink 40 at the first surface 311; when the first electrode layer 20 is energized, the ink 40 is pushed up to form a spherical shape, and the ink 40 is not easy to spread.

[0082] For some implementation methods, please refer to Figure 9 and Figure 10 The first electrode layer 20 includes a plurality of energized regions 21, which are arranged sequentially along the first direction X. When the first electrode layer 20 is energized, the plurality of energized regions 21 are energized sequentially along the first direction X. At least one deformable structure 32 is provided in the energized region 21. The first direction X is perpendicular to the thickness direction Z of the composite insulating layer 30 and is also parallel to the first surface 311.

[0083] In practice, the energizing process of the first electrode layer 20 is not performed simultaneously on the entire first electrode layer 20, but rather by energizing different energized areas 21 in stages. This allows multiple deformable structures 32 arranged along the first direction X to be activated sequentially and undergo expansion and deformation. This controls the direction of ink 40 shrinkage, allowing the ink 40 to shrink gradually in one direction, similar to a snowball rolling pattern, thus mitigating the problem of ink 40 agglomerating and remaining along the shrinkage path during the shrinkage process.

[0084] In specific implementation, please refer to Figure 9 Along the first direction X, the circuit includes a first energized region 211, a second energized region 212, a third energized region 213, and a fourth energized region 214. The first energized region 211 is energized first, so the deformation structure 32 within it expands and bulges upwards first, causing the ink 40 to roll towards the unexpanded energized region 214. Then, the second energized region 212 is energized, while the first energized region 211 remains energized, and the ink 40 rolls towards the third energized region 213, and so on until the fourth energized region is energized. In other embodiments, the number of energized regions 21 is not limited to four.

[0085] In specific implementation, please refer to Figure 10When the first electrode layer 20 is energized, multiple energized regions 21 are sequentially energized at both ends along the first direction X. Specifically, along the first direction X, there are a first energized region 211, a second energized region 212, and a third energized region 213; wherein, the second energized region 212 is energized first, so the deformation structure 32 in the second energized region 212 expands and bulges upward first, causing the ink 40 to roll towards the energized region 21 that has not expanded. Then, the first energized region 211 and the third energized region 213 are energized, while the second energized region 212 remains energized, and the ink 40 rolls towards the outermost energized region 21. In other embodiments, the number of energized regions 21 is not limited to three. This causes the ink 40 to shrink from the middle to both sides, shortening the shrinkage path, improving aggregation residue, and increasing the shrinkage rate.

[0086] In some implementations, the electronic paper structure 100 operates at a temperature of 70°C or less, which is a safe temperature for display. At this operating temperature, the deformable structure 32 can deform to produce an arched bending effect without affecting the display; and at this temperature, it will not damage other structural components.

[0087] In some embodiments, when the electronic paper structure 100 is not powered on, the ambient temperature is room temperature (e.g., 25°C); when powered on, the pixel driving voltage range of the electronic paper structure 100 is 12V to 22V, and the temperature change range due to electrothermal heating is 0°C to 45°C, that is, the operating temperature of the electronic paper structure 100 after being powered on can be less than or equal to 70°C.

[0088] In some embodiments, the total thickness H0 of the composite insulating layer 30 can be 500 nm to 3000 nm, and the length L of the composite insulating layer 30 can be 20 μm to 300 μm. Optionally, the total thickness H0 of the composite insulating layer 30 can be 500 nm, 1000 nm, 1500 nm, 2000 nm, 2500 nm, or 3000 nm; and the length L of the composite insulating layer 30 can be 20 μm, 50 μm, 100 μm, 150 μm, 200 μm, 250 μm, or 300 μm.

[0089] In some embodiments, the thickness H1 of the deformation layer 321 and the thickness H2 of the memory layer 322 are such that H1 + H2 = H0; optionally, H1:H2 = 9:1. Specifically, after the deformation layer 321 expands due to heat, the deformation in the thickness direction Z can be H2, that is, after the deformation layer 321 expands, it completely lifts the memory layer 322 out of the groove 312.

[0090] In a specific embodiment, the total thickness H0 of the composite insulating layer 30 is 1000 nm; wherein the thickness H1 of the deformation layer 321 and the thickness H2 of the memory layer 322 are in a ratio of 9:1. The first deformation layer 3211 is fabricated using modified polydimethylsiloxane (PDMS), epoxy resin, and fluorinated polyimide, respectively. A driving voltage of 12V is applied to the electronic paper structure 100 to achieve an operating temperature of 70°C, and the thickness of the first deformation layer 3211 at 25°C and 70°C is calculated, as shown in Table 1.

[0091] Table 1

[0092] Modified polydimethylsiloxane 800 1008 12.6％ Epoxy resin 800 1032 12.9％ Fluorinated polyimide 800 1060 13.3％

[0093] In some embodiments, the coefficient of thermal expansion of the first material is 270*10. -6 / K~310*10 -6 / K, the coefficient of thermal expansion of the second material is -4.0*10 -6 / K~-11*10 -6 / K. Optionally, the coefficient of thermal expansion of the first material can be 270*10. -6 / K、280*10 -6 / K、290*10 -6 / K、300*10 -6 / K、310*10 -6 / K; the coefficient of thermal expansion of the second material can be -4.0*10 -6 / K、-5.0*10 -6 / K、-6.0*10 -6 / K、-7.0*10 -6 / K、-8.0*10 -6 / K、-9.0*10 -6 / K、-10.0*10 -6 / K、-11*10 -6 / K.

[0094] In some embodiments, the thickness of the second deformation layer 3212 can be calculated from the thermal expansion coefficient of the first material, the thermal expansion coefficient of the second material, and the thickness of the first deformation layer 3211, wherein the thickness H of the second deformation layer 3212 is... n The calculation formula is shown in (1) below:

[0095]

[0096] Among them, E m E is the elastic modulus of the first material. m =10MPa; H m H is the thickness of the first deformation layer 3211. m=800nm; α m E is the coefficient of thermal expansion of the first material; n E represents the elastic modulus of the second material. n =70GPa; α n is the coefficient of thermal expansion of the second material.

[0097] In specific embodiments, Sc2W3O is used respectively. 12 ZrW2O8, ZrV2O7, Y2W3O 12 The second deformation layer 3212 and the third deformation layer 3213 are fabricated. The thickness of the second deformation layer 3212 made of the corresponding material is calculated using the above calculation formula (1), and the calculation results are shown in Table 2.

[0098] Table 2

[0099] <![CDATA[Sc2W3O 12 ]]> -11 1.4 2.8nm <![CDATA[ZrW2O8]]> -9 1.7 3.4nm <![CDATA[ZrV2O7]]> -7.5 2.1 4.2nm <![CDATA[Y2W3O 12 ]]> -4 3.9 7.8nm

[0100] In some embodiments, the length of the deformable structure 32 in the first direction X can be 3μm to 9μm, wherein the first direction X is perpendicular to the thickness direction Z of the composite insulating layer 30 and is also parallel to the first surface 311. Optionally, the length of the deformable structure 32 in the first direction X can be 3μm, 4μm, 5μm, 6μm, 7μm, 8μm, or 9μm.

[0101] In some embodiments, the spacing between two adjacent deformable structures 32 along the first direction X can be 3 μm, and the number of deformable structures 32 disposed along the first direction X can be 13 to 25. Optionally, the number of deformable structures 32 disposed along the first direction X can be 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, or 25.

[0102] In some embodiments, when the first electrode layer 20 is energized, the height of the deformable structure 32 after expansion and deformation can be 0.4 μm to 2.1 μm. Optionally, the height of the deformable structure 32 protruding from the first surface 311 can be 0.4 μm, 0.6 μm, 0.9 μm, 1.3 μm, 1.8 μm, or 2.1 μm.

[0103] In a specific embodiment, the height H of the deformable structure 32 after expansion deformation is... d The radius of curvature R of the surface formed by the deformable structure 32 in the first direction X can be positively correlated with the length of the deformable structure 32 in the first direction X. The increase in the contact angle of the deformable structure 32 can also be positively correlated with the length of the deformable structure 32 in the first direction X.

[0104] Among them, the height H of the deformable structure 32 after expansion deformation d The calculation formula is shown in (2) below, and the calculation formula for the radius of curvature R of the surface formed by the deformed structure 32 is shown in (3) below:

[0105]

[0106] Where k is the curvature, R = 1 / k; α low C is the coefficient of thermal expansion of the second cross-linked region 3222. high C is the crosslinking density scaling factor for the first crosslinking region 3221. high =0.7~0.9; C low C is the crosslinking density scaling factor for the second crosslinking region 3222. low =0.1~0.3; H2 is the thickness of memory layer 322; v is Poisson's ratio, v=0.35.

[0107] In some embodiments, the coefficient of thermal expansion of the second crosslinking region 3222 is 180*10. -6 / K~250*10 -6 / K. Optionally, the coefficient of thermal expansion of the second cross-linking region 3222 can be 180*10. -6 / K、190*10 -6 / K、200*10 -6 / K、210*10 -6 / K、220*10 -6 / K、230*10 -6 / K、240*10 -6 / K、250*10 -6 / K.

[0108] In a specific embodiment, deformable structures 32 with lengths of 3μm, 6μm, and 9μm in the first direction X are fabricated, and the deformable structures 32 are square. The height H of the deformable structure 32 after expansion deformation is calculated using the above calculation formulas (2) and (3). d The radius of curvature R of the surface formed by the deformed structure 32 is calculated, and the results are shown in Table 3.

[0109] Table 3

[0110] 3 0.4～0.6 2.3 75° 6 0.9～1.3 3.2 80° 9 1.8～2.1 3.7 87°

[0111] In some implementations, the response time of the electronic paper structure 100 during the transition from an unpowered state to a powered state is 30ms to 80ms, where the response time refers to the time taken for the display to cool down from a heated state. Optionally, the response time of the electronic paper structure 100 can be 30ms, 40ms, 50ms, 60ms, 70ms, or 80ms.

[0112] In a specific embodiment, the present invention provides an electronic paper structure 100 including 6 to 10 electrode blocks designed along the length L direction, each electrode block corresponding to 2 to 4 deformation structures 32; the electronic paper structure 100 is driven with a driving voltage of 12V and heated to 70°C; wherein the lengths of the deformation structures 32 in the first direction X are 3μm, 6μm, and 9μm, and the thickness H2 of the memory layer 322 is 350nm. The heating time and power-on time are shown in Table 4 below.

[0113] Table 4

[0114] Heating time (ms) 16 24 32 Time per electrode block (ms) 2 3 4 Cooling time (ms) 16 26 34 Increase in contact angle 75° 80° 87°

[0115] As can be seen from Table 4, the heating and cooling time of the electronic paper structure 100 provided by the present invention is 32ms to 66ms; while the response time of the conventional electrowetting electronic paper structure 100 is 80ms to 1200ms. Therefore, the response time of the electronic paper structure 100 provided by the present invention is comparable to that of the conventional electrowetting electronic paper structure 100.

[0116] [Methods for fabricating electronic paper structures]

[0117] In some embodiments, the present invention provides a method for manufacturing an electronic paper structure. This method is used to manufacture the electronic paper structure provided in the above embodiments. Please refer to... Figure 11 The production method is as follows:

[0118] Step S100: An insulating layer is formed on the first electrode layer, and a groove is formed on the insulating layer.

[0119] Step S200: A deformation structure is set in the groove to obtain a composite insulation layer.

[0120] Step S300: Apply ink to the composite insulating layer.

[0121] In a specific embodiment, in step S100, the insulating layer can be made of a conventional hydrophobic insulating material, and the insulating layer can be fabricated on the first electrode layer by coating or deposition. Optionally, the grooves on the insulating layer can be formed by etching, including but not limited to laser etching, chemical etching, etc.

[0122] For some implementation methods, please refer to Figure 12 In step S200, a deformation structure is set in the groove, specifically including the following steps:

[0123] Step S210: Set a deformation layer in the groove.

[0124] Step S220: Set a memory layer on the deformation layer.

[0125] In a specific embodiment, in step S210, the deformation layer in the groove can be formed by coating or deposition. Optionally, forming the deformation layer includes sequentially forming a third deformation layer, a first deformation layer, and a second deformation layer; wherein the materials of the third deformation layer, the first deformation layer, and the second deformation layer can refer to the above-described embodiments.

[0126] For some implementation methods, please refer to Figure 13 In step S220, a memory layer is set on the deformation layer, specifically including the following steps:

[0127] Step S221: The material of the memory layer is coated onto the deformation layer to obtain the prefabricated layer.

[0128] Step S222: Cross-link and etch the prefabricated layer to obtain the memory layer.

[0129] Step S223: Perform thermomechanical training on the memory layer.

[0130] In a specific embodiment, in step S221, the material of the memory layer needs to be configured so that the material of the memory layer can remain flat at room temperature (25°C) and form protrusions at high temperature (70°C). Optionally, the material of the memory layer includes liquid crystal monomers, fluorinated diacrylates, alkyl thiols, and photoinitiators. Therefore, in the method for manufacturing the memory layer provided by the present invention, the resulting memory layer can be controlled to achieve shrinkage recovery and expansion deformation at two fixed temperatures.

[0131] In a specific embodiment, the mass ratio of liquid crystal monomer, fluorinated diacrylate, alkyl thiol, and photoinitiator can be 60%:30%:8%:2%. The liquid crystal monomer provides the oriented building blocks, the fluorinated diacrylate acts as a high-Tg crosslinking agent (Tg≈110℃), the alkyl thiol acts as a low-Tg crosslinking agent (Tg≈45℃), and the photoinitiator is used to control gradient curing. In other embodiments, other materials can be selected as the low-Tg and high-Tg crosslinking agents.

[0132] In a specific embodiment, in step S222, the material in the coated preform layer is not cross-linked, so the preform layer cannot achieve the effect of thermal expansion. Therefore, the preform layer needs to be cross-linked. Optionally, the cross-linking treatment method includes, but is not limited to, photocross-linking and chemical cross-linking. After the cross-linking treatment, the cross-linked memory layer is array-etched so that the surface of the deformed structure is flush with the first surface.

[0133] In a specific embodiment, in step S223, the resulting memory layer has a memory function, that is, it can remember the shrinkage and recovery at room temperature (25°C) and the expansion and deformation at high temperature (70°C). Therefore, the present invention requires the memory layer to undergo pre-processed thermomechanical training so that the memory layer remembers the above two temperature points.

[0134] For some implementation methods, please refer to Figure 14 In step S222, the prefabricated layer undergoes a crosslinking treatment, specifically including the following steps:

[0135] Step S2221: Set a mask on the prefabricated layer. The transmittance of the masks is not all the same.

[0136] Step S2222: The preform layer is subjected to ultraviolet exposure treatment to crosslink the material of the memory layer.

[0137] In a specific embodiment, in step S2221, a photomask is used to block light; the photomask has a grayscale gradient grating, and the transmittance of the grayscale gradient grating changes in a gradient, with a linear gradient change of 10% to 90%. Optionally, the transmittance of the grayscale gradient grating changes in a ring-shaped gradient, corresponding to the first cross-linking region and the second cross-linking region mentioned above. The outermost part of the grayscale gradient grating has the highest transmittance, corresponding to the first cross-linking region, while the middle part of the grayscale gradient grating has the lowest transmittance, corresponding to the second cross-linking region.

[0138] In a specific embodiment, by setting a special grayscale gradient grating, the degree of cross-linking on the memory layer can be made to have a gradient change. Optionally, the degree of cross-linking of the memory layer gradually decreases from the outermost part of the memory layer towards the middle part. This results in the middle part of the memory layer having low cross-linking, making it easy to soften and expand; and the middle part of the memory layer having high cross-linking, maintaining rigidity.

[0139] For some implementation methods, please refer to Figure 15 In step S223, the memory layer undergoes thermomechanical training, specifically including the following steps:

[0140] Step S2231: Heat the memory layer to a first temperature and maintain the first temperature.

[0141] Step S2232: Set a template on the memory layer and apply pressure to the template.

[0142] Step S2233: Maintain the applied pressure and remove the template after cooling the memory layer to the second temperature.

[0143] In a specific embodiment, the first temperature can be the high temperature (70°C) described in the above embodiments, and the duration of maintaining the first temperature can be 5 minutes. The template can be a silica microsphere template (diameter 3μm~9μm), and the template is used to contact the surface of the memory layer. The pressure applied to the template can be 0.2 MPa, and the pressure is maintained for 30 seconds. The second temperature can be the room temperature (25°C) described in the above embodiments.

[0144] In other embodiments, the first temperature and the second temperature can be replaced with other temperatures, but the first temperature must be kept higher than the second temperature. It is understood that by configuring the memory layer material in the above embodiments, the specific temperatures for shrinkage recovery and expansion deformation can be controlled accordingly. Optionally, the first temperature can also be 50°C, 60°C, 80°C, etc., and the second temperature can also be 10°C, 20°C, 30°C, etc.

[0145] Electronic paper

[0146] In some embodiments, the present invention also provides an electronic paper, which includes the electronic paper structure provided in the above embodiments; or, the electronic paper includes an electronic paper structure manufactured by the method for manufacturing the electronic paper structure provided in the above embodiments.

[0147] It should be noted that the limitations on each step involved in this solution are not considered as limiting the order of steps, provided that they do not affect the implementation of the specific solution. The steps listed first can be executed first, later, or even simultaneously. As long as this solution can be implemented, it should be considered to fall within the scope of protection of this application.

[0148] The above-disclosed embodiments are merely preferred embodiments of this application and should not be construed as limiting the scope of this application. Those skilled in the art will understand that all or part of the processes for implementing the above embodiments and equivalent variations made in accordance with the claims of this application are still within the scope of this application.

Claims

1. An electronic paper structure, characterized in that, include: First electrode layer; A composite insulating layer is stacked on the first electrode layer. The composite insulating layer includes an insulating layer and a plurality of deformable structures. The insulating layer includes a first surface facing away from the first electrode layer. The first surface is recessed with a plurality of grooves. The plurality of deformable structures are housed in the plurality of grooves in a one-to-one correspondence. Ink is disposed on the composite insulating layer; When the first electrode layer is energized, the deformable structure expands and deforms and extends out of the first surface.

2. The electronic paper structure according to claim 1, characterized in that, When the first electrode layer is energized, the portion of the deformable structure extending beyond the first surface is an upward-protruding curved surface.

3. The electronic paper structure according to claim 1, characterized in that, The deformation structure includes a deformation layer and a memory layer connected together. The deformation layer is housed in the groove. When the first electrode layer is not energized, the memory layer is housed in the groove. When the first electrode layer is energized, the deformation layer expands and deforms along the thickness direction, and the memory layer extends out of the groove.

4. The electronic paper structure according to claim 3, characterized in that, The deformation layer includes a first deformation layer and a second deformation layer connected together. The first deformation layer includes a first material, and the second deformation layer includes a second material. The first material expands when heated, and the second material contracts when heated.

5. The electronic paper structure according to claim 4, characterized in that, The deformation layer includes a third deformation layer, which includes the second material. The second deformation layer is connected to the memory layer. The first deformation layer is connected to the side of the second deformation layer opposite to the memory layer. The third deformation layer is connected to the side of the first deformation layer opposite to the memory layer.

6. The electronic paper structure according to claim 3, characterized in that, The memory layer includes a first cross-linked region and a second cross-linked region, wherein the degree of cross-linking of the first cross-linked region is greater than that of the second cross-linked region, and the degree of thermal deformation of the first cross-linked region is less than that of the second cross-linked region. Along the circumference of the memory layer, the first cross-linked region is wrapped around the outer periphery of the second cross-linked region.

7. The electronic paper structure according to claim 1, characterized in that, When the first electrode layer is energized, the deformable structure includes a first bump and a plurality of second bumps, the first bump protruding from the first surface, the plurality of second bumps connecting to the first bump, and the plurality of second bumps protruding from the surface of the first bump; and / or, The first electrode layer includes multiple energized regions, which are arranged sequentially along a first direction; when the first electrode layer is energized, the multiple energized regions are energized sequentially along the first direction, which intersects with the thickness direction of the composite insulating layer.

8. A method for fabricating an electronic paper structure, characterized in that, The manufacturing method is used to manufacture the electronic paper structure as described in any one of claims 1-7, and the manufacturing method includes: An insulating layer is disposed on the first electrode layer, and a groove is formed on the insulating layer; A deformation layer and a memory layer are disposed in the groove to obtain a composite insulating layer; Ink is applied to the composite insulating layer.

9. The manufacturing method according to claim 8, characterized in that, The memory layer is disposed on the deformation layer, including: The material of the memory layer is coated onto the deformation layer to obtain the preformed layer; The prefabricated layer is cross-linked and etched to obtain the memory layer; The memory layer is subjected to thermomechanical training; The memory layer includes a first cross-linked region and a second cross-linked region. The degree of cross-linking of the first cross-linked region is greater than that of the second cross-linked region, and the degree of thermal deformation of the first cross-linked region is less than that of the second cross-linked region.

10. The manufacturing method according to claim 9, characterized in that, The preform layer is cross-linked, including: A photomask is placed on the prefabricated layer, and the transmittance of the photomask is not entirely the same; The prefabricated layer is subjected to ultraviolet exposure treatment to crosslink the material of the memory layer; Wherein, along the circumferential direction of the memory layer, the first cross-linked region surrounds the outer periphery of the second cross-linked region; and / or, Performing thermomechanical training on the memory layer includes: The memory layer is heated to a first temperature and maintained at the first temperature; A template is placed on the memory layer, and pressure is applied to the template; Maintain the applied pressure and remove the memory layer from the template after cooling it to the second temperature; Wherein, the first temperature is greater than the second temperature.

Images