Quasi-BIC chiral metasurface device based on refractive index modulation and preparation method and application thereof

By controlling the refractive index of the optical medium layer in the subwavelength structure partition, the symmetry is broken, solving the problems of high Q value and high CD value of existing chiral metasurface devices, realizing high-precision large-area fabrication and material compatibility, and applicable to a variety of optical devices.

CN120972394AActive Publication Date: 2025-11-18WESTLAKE INSTITUTE FOR OPTOELECTRONICS
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Patent Information

Application Number
CN202511510257.6
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2025-10-22
Publication Date
2025-11-18
Estimated Expiration
2045-10-22

AI Technical Summary

Technical Problem

Existing chiral metasurface devices struggle to achieve high Q and high CD optical responses, and are difficult to fabricate with low precision, making them incompatible with various materials and large-area processing.

Method used

By modulating the refractive index of the optical medium layer in the subwavelength structure partitioning, breaking the in-plane and out-of-plane symmetry, and using a combination of optical medium layers with different refractive indices, combined with the lift-off process, high-precision large-area fabrication can be achieved.

Benefits of technology

It achieves a strong intrinsic chiral response with high Q value (1200~1800) and high CD value (0.98~0.99), is compatible with a variety of materials, is suitable for a variety of optical devices, and is easy to process.

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Abstract

The invention relates to a quaii-BIC chiral metasurface device based on refractive index modulation and a preparation method and application thereof.The chiral metasurface device comprises a plurality of sub-wavelength structure partitions which are sequentially arranged along the X axis, and every two adjacent sub-wavelength structure partitions are rotationally and symmetrically arranged relative to the Y axis; a sub-wavelength structure in the sub-wavelength structure partition comprises at least two optical dielectric layers which are stacked along the Z axis, at least one sub-wavelength structure in the sub-wavelength structure partition is obliquely arranged relative to the Y axis, and a refractive index difference exists between the at least two optical dielectric layers, so that the metasurface device realizes intrinsic chirality. The metasurface device realizes tunable strong intrinsic chirality at multiple wavelengths, and the preparation method has the advantages that the processing difficulty is low, the thickness of the optical dielectric layer is low, the thickness and the inclination angle of the optical dielectric layer do not need to be accurately controlled, the lift-off process is compatible, and high-precision large-area metasurface device preparation can be realized.
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