Substrate processing apparatus, substrate processing method, and storage medium

Abstract

The invention provides a substrate processing apparatus, a substrate processing method, and a storage medium, which can reduce the usage amount of a solvent used for cleaning a liquid discharge pipe. A substrate processing apparatus according to one aspect of the present disclosure performs predetermined processing on a substrate. The substrate processing apparatus includes: a holding unit configured to hold a substrate when liquid processing is performed on the substrate using a processing liquid; a cup part that is disposed so as to surround the holding part and that receives the processing liquid; a liquid discharge pipe for guiding the processing liquid used in the liquid processing to the outside of the substrate processing apparatus; a connection pipe for guiding the processing liquid from the cup part to the liquid discharge pipe; and an airtight part that maintains a state in which gas does not flow between the liquid discharge pipe and the connection pipe. The inside of the liquid discharge pipe is maintained in an atmosphere in which the solvent of the processing liquid can be removed.

Description

TECHNICAL FIELD

[0001] The present disclosure relates to a substrate processing apparatus, a substrate processing method, and a storage medium. BACKGROUND

[0002] A liquid processing apparatus is disclosed in Patent Literature 1, which includes a main drain pipe for draining liquid from a liquid processing unit, and a plurality of branch pipes for draining liquid, which are branched from the main drain pipe to each of a plurality of liquid processing units and connected to the respective liquid processing units.

[0003] PRIOR ART DOCUMENTS

[0004] PATENT LITERATURE

[0005] Patent Literature 1: Japanese Patent Application Publication No. 2012-142404 SUMMARY

[0006] PROBLEMS TO BE SOLVED BY THE INVENTION

[0007] The present disclosure provides a substrate processing apparatus, a substrate processing method, and a storage medium, which are useful for reducing the amount of solvent used for cleaning a drain pipe.

[0008] SOLUTION TO PROBLEM

[0009] The substrate processing apparatus according to one aspect of the present disclosure is an apparatus that performs a prescribed process on a substrate. The substrate processing apparatus includes a holding portion for holding the substrate when a liquid process is performed on the substrate using a processing liquid; a cup portion disposed so as to surround the holding portion, for receiving the processing liquid; a drain pipe for guiding the processing liquid after use in the liquid process to the outside of the substrate processing apparatus; a connection pipe for guiding the processing liquid from the cup portion to the drain pipe; and a gas-tight portion that maintains a state in which gas does not flow between the drain pipe and the connection pipe. The inside of the drain pipe is maintained in an atmosphere in which a solvent of the processing liquid can be removed.

[0010] EFFECT OF THE INVENTION

[0011] According to the present disclosure, a substrate processing apparatus, a substrate processing method, and a storage medium are provided, which are useful for reducing the amount of solvent used for cleaning a drain pipe. BRIEF DESCRIPTION OF DRAWINGS

[0012] Figure 1 is a plan view schematically showing an example of a substrate processing apparatus.

[0013] Figure 2 is a front view schematically showing an example of a substrate processing apparatus.

[0014] Figure 3 This is a schematic diagram showing an example of a liquid treatment device.

[0015] Figure 4 This is a schematic diagram illustrating an example of a drainage device.

[0016] Figure 5 This is a schematic diagram illustrating an example of a drainage device.

[0017] Figure 6 This is a schematic diagram showing an example of an airtight section.

[0018] Figure 7 This is a schematic diagram showing an example of an airtight section.

[0019] Figure 8 This is a schematic diagram showing an example of an airtight section.

[0020] Figure 9 This is a block diagram illustrating an example of the hardware structure of a control device.

[0021] Figure 10 (a) and Figure 10 (b) is a flowchart illustrating an example of the processing flow performed by the control device. Detailed Implementation

[0022] The wafer processing system, which is the substrate processing apparatus according to this embodiment, will now be described with reference to the accompanying drawings. Furthermore, in this specification, elements having substantially the same functional structure are labeled with the same reference numerals, thereby omitting repeated descriptions.

[0023] The wafer processing system, which is the substrate processing apparatus according to this embodiment, will now be described with reference to the accompanying drawings. Furthermore, in this specification, elements having substantially the same functional structure are labeled with the same reference numerals, thereby omitting repeated descriptions.

[0024] <Wafer Processing System>

[0025] First, the structure of the wafer processing system involved in this embodiment will be described. Figure 1 , Figure 2 These are a top view and a front view, schematically illustrating the general structure of the wafer processing system 1. The wafer processing system 1 is an apparatus for performing prescribed processes on a wafer W (substrate). In this embodiment, an example will be described using a photolithography system in which the wafer processing system 1 performs resist film formation and development processes on the wafer W.

[0026] like Figure 1As shown, the wafer processing system 1 includes: a cassette station 2 for loading and unloading cassettes C containing multiple wafers W; and a processing station 3 equipped with various processing devices for performing prescribed processing on the wafers W. Furthermore, the wafer processing system 1 has a structure that integrates the cassette station 2, the processing station 3, and the interface station 4, the interface station 4 being used for transferring wafers W between the processing station 3 and an exposure device (not shown) adjacent to the interface station 4 on the opposite side of the processing station 3. Additionally, as... Figure 1 As shown, two processing stations 3 are set between box station 2 and interface station 4, but one or more stations can also be set.

[0027] The cassette station 2 is equipped with multiple cassette placement stages 21 and wafer transfer devices 22 and 23. The cassette station 2 uses the wafer transfer devices 22 or 23 to transfer wafers between the cassette C placed on the placement stage 12 and the processing station 3. For this purpose, the wafer transfer devices 22 and 23 are equipped with drive mechanisms that have movement paths in various directions, such as horizontal (X and Y directions), vertical (Z direction), and around the vertical axis (θ direction), as needed, or they can be equipped with drive mechanisms that have movement paths in all directions.

[0028] At least one of the wafer transfer devices 22 and 23 is capable of transferring wafers to and from the cassette C, and also capable of transferring wafers to and from the processing station 3. Furthermore, the wafer transfer to and from the processing station 3 refers, for example, to the transfer of wafers to a third block G3 equipped with transfer devices accessible by the wafer transfer device 33 within the processing station 3 (described later). The third block G3 may have multiple transfer devices (not shown) arranged vertically.

[0029] In addition, an inspection device (not shown) for inspecting wafer W may be provided at a location accessible by either of the wafer transport devices 22 and 23.

[0030] Processing station 3 has multiple blocks, such as the first block G1, the second block G2, and the fourth block. Additionally, as... Figure 2 As shown, layer 31, which includes the first G1 and the second G2, has multiple layers stacked along the vertical direction. For example, on the front side of processing station 3 ( Figure 1 The first G1 is located on the negative X-direction side of the processing station 3. Figure 1 A second G2 is installed on the positive X-direction side. On the side of processing station 3 near interface station 4 ( Figure 1 A fourth G4 may be provided on the positive Y-direction side or in the connection between processing station 3 and other adjacent processing stations 3. The fourth G4 may also have multiple connecting devices arranged in the vertical direction. In addition, the aforementioned third G3 may also be provided inside processing station 3.

[0031] The first G1 is equipped with multiple processing devices, such as a patterning film forming apparatus and a developing apparatus, neither of which are shown in the figure. The patterning film forming apparatus may include, for example, an anti-reflective film forming apparatus in addition to a resist forming apparatus.

[0032] For example, multiple processing units can be arranged in a horizontal direction. Furthermore, the number, configuration, and type of these processing units can be arbitrarily selected.

[0033] In these patterning film forming apparatuses and developing apparatuses, for example, a prescribed processing liquid or a prescribed gas is supplied to the wafer W. In this way, the patterning film forming apparatus forms a resist film used as a mask when forming a pattern on the lower layer side, and an anti-reflective film for efficient light irradiation processing, such as exposure processing. On the other hand, in the developing apparatus, a portion of the exposed resist film is removed to form the uneven shape of the aforementioned mask. In the first piece G1, as an example of a patterning film forming apparatus, a liquid processing apparatus U1 can be provided to perform liquid processing using a processing liquid for forming the resist film.

[0034] For example, in the second G2, heat treatment equipment (not shown) for heating and cooling wafer W is arranged along the vertical and horizontal directions. Additionally, in the second G2, to improve the adhesion of the resist to wafer W, along the vertical direction ( Figure 2 The wafer W is equipped with a hydrophobic treatment device (for hydrophobic treatment) and a peripheral exposure device (for exposing the outer periphery of the wafer W) arranged in the Z-direction and horizontal direction, but neither is shown in the figure. The number and configuration of these heat treatment devices, hydrophobic treatment devices, and peripheral exposure devices can be arbitrarily selected.

[0035] like Figure 1 As shown, when viewed from above, the area sandwiched between the first G1 and the second G2 forms a wafer transport area 32. A wafer transport device 33, for example, is disposed in the wafer transport area 32.

[0036] The wafer transport device 33 has a transport arm that can move freely in, for example, the Y direction, the front-back direction, the θ direction, and the vertical direction. The wafer transport device 33 can move within the wafer transport area 32 to transport wafers W to designated devices within the surrounding first G1, second G2, third G3, and fourth G4. Figure 1 In the case where there are multiple processing stations 3 as shown, the wafer transfer device 33 of the processing station 3 located on the side near the interface station 4 can transfer wafers to the specified devices in the first G1, the second G2, and the fourth G3, and can also transfer wafers W to the specified devices in the fifth G5, which will be described later.

[0037] For example,Figure 2 As shown, the wafer conveyance devices 33 are arranged in the vertical direction. One wafer conveyance device 33 can convey a wafer W to a prescribed device at a height position of a plurality of layers 31 on the upper side in the vertical direction. Another wafer conveyance device 33 can convey a wafer W to a prescribed device at a height position of a plurality of layers 31 at a position lower than these layers 31. A plurality of wafer conveyance regions 32 are provided in a manner that enables such conveyance of wafers W. The number of wafer conveyance devices 33 and the number of layers 31 corresponding to one wafer conveyance device 33 can be arbitrarily selected, for example, one wafer conveyance device 33 can be provided for each layer 31.

[0038] In addition, the wafer conveyance region 32 or the first block G1 and the second block G2 can also have a shuttle conveyance device (not shown). The shuttle conveyance device linearly conveys a wafer W between a space adjacent to one side of the processing station 3 and another space adjacent to the opposite side thereof.

[0039] The interface station 4 is provided with a fifth block G5 having a plurality of transfer devices, wafer conveyance devices 41 and 42. The interface station 4 uses the wafer conveyance devices 41 or 42 to convey a wafer W between the fifth block G5, where the wafer W is transferred by the wafer conveyance devices 33, and the exposure device. For this reason, the wafer conveyance devices 41 and 42 each have a drive mechanism having a movement path in each of the horizontal direction (X direction, Y direction), the vertical direction (Z direction), and the rotation direction about the vertical axis (θ direction), as necessary, and can also have a drive mechanism having a movement path in all directions. At least either one of the wafer conveyance devices 41 and 42 can support a wafer W and convey the wafer W between a transfer device in the fifth block G5 and the exposure device.

[0040] A cleaning device that cleans the surface of a wafer W and the aforementioned peripheral exposure device can also be provided in the interface station 4 at a position accessible by either one of the wafer conveyance devices 41 and 42.

[0041] As described above, the inspection device can be provided in the cassette station 2, but can also be provided in the processing station 3 and the interface station 4 at a position accessible by either one of the conveyance arms 33, 41, and 42 provided in the interior of each interface station. Figure 1 or Figure 2 provided in the interior of each interface station.

[0042] A control device 100 is provided for the wafer processing system 1. The control device 100 is, for example, a computer having a program storage section (not shown). The program storage section stores a program for controlling the processing of the wafer W in the wafer processing system 1. In addition, the program storage section stores a program for controlling the operation of the drive system of the various processing devices, conveyance devices, etc. described above to realize the wafer processing in the wafer processing system 1. Further, the program described above can be recorded in a storage medium H that can be read by the computer, and installed in the control device 100 from the storage medium H. The storage medium H can include a ROM, a RAM, a hard disk, but is not limited to the configuration, type, and can be a temporary storage medium or a non-temporary storage medium. Further, the control device 100 can include a portion that performs the storage, readout, execution of the program for realizing the wafer processing, and communication related thereto, and the location of each portion can be disposed in either of the inside and outside of the wafer processing system 1. The control device 100 can be one or a plurality of circuits, and can be integrally provided or partially separated.

[0043] <Operation of Wafer Processing System>

[0044] The wafer processing system 1 is configured as described above. Next, an example of wafer processing using the wafer processing system 1 configured as described above will be described.

[0045] First, the cassette C in which a plurality of wafers W are accommodated is conveyed into the cassette station 2 of the wafer processing system 1, and placed on the cassette placement table 21. Next, each wafer W in the cassette C is sequentially taken out by the wafer conveyance device 22 or 23, and conveyed to the interface device of the third block G3.

[0046] The wafer W conveyed to the interface device of the third block G3 is supported by the wafer conveyance device 33, and conveyed to the hydrophobizing processing device provided in the second block G2 to perform hydrophobizing processing. Next, the wafer W is conveyed by the wafer conveyance device 33 to the resist film forming device (for example, the liquid processing device U1) to form a resist film on the wafer W, and then conveyed to the heat processing device to perform pre-baking processing, and then to the interface device of the fifth block G5. Further, in the case where a plurality of processing stations 3 exist as in Figure 1 、 Figure 2 In the case where a plurality of processing stations 3 exist as in

[0047] The wafer W that has been delivered to the delivery device of the fifth block G5 is delivered to the exposure device by the wafer delivery devices 41 and 42, and subjected to exposure processing in a predetermined pattern. Further, the wafer W can be cleaned by a cleaning device before the exposure processing.

[0048] The wafer W that has been subjected to the exposure processing is delivered to the delivery device of the fifth block G5 by the wafer delivery devices 41 and 42. Thereafter, the wafer W is delivered to the heat treatment device by the wafer delivery device 33 to perform post-exposure bake processing.

[0049] The wafer W that has been subjected to the post-exposure bake processing is delivered to the developing device by the wafer delivery device 33 to perform development. After the development, the wafer W is delivered to the heat treatment device by the wafer delivery device 33 to perform post-bake processing.

[0050] Thereafter, the wafer W is delivered to the delivery device of the third block G3 by the wafer delivery device 33, and delivered to the cassette C on the predetermined cassette mounting table 21 by the wafer delivery device 22 or 23 of the cassette station 2. By so doing, the series of photolithography processes ends.

[0051] Further, the wafer processing system in the present disclosure is not limited to the structure and the operation described above. For example, in the embodiment described above, the wafer processing system is directly connected to the exposure device and the delivery of the wafer W is performed between the interface station 4 and the exposure device, but the wafer processing system can not be directly connected to the exposure device. In this case, for example, the wafer W is delivered to the cassette station 2 again after being delivered from the cassette station 2 to the processing station 3 and subjected to necessary processing, to be carried out to the outside of the system. In addition, unnecessary devices among the devices cited as the processing devices can not be provided in the wafer processing system, or the processing in the devices can not be performed.

[0052] (Specific example of liquid processing device)

[0053] Next, a specific example of the liquid processing device U1 will be described with reference to Figure 3 The liquid processing device U1 supplies a processing liquid (hereinafter, referred to as "processing liquid L1") for forming a resist film to the wafer W to form a coating film of the processing liquid L1. The processing liquid L1 is a chemical liquid for forming a coating film of a resist on the surface Wa of the wafer W. By subjecting the coating film of the processing liquid L1 formed by the liquid processing device U1 to heat treatment, an after-film-formed state resist film is formed. The liquid processing device U1 has a housing 49, a rotation holding portion 50, a liquid supply portion 60, and a cleaning tank 80.

[0054] The housing 49 houses at least a part of various components included in the liquid processing apparatus U1. The wafer W is configured to be carried in and out with respect to the inside of the housing 49. For example, a carrying-in / out port for carrying in and out the wafer W is formed in the side wall of the housing 49. The wafer W is carried into the inside of the housing 49 by the wafer carrying device 33 via the carrying-in / out port, and is carried out to the outside of the housing 49 via the carrying-in / out port.

[0055] The rotation holding portion 50 is configured to hold and rotate the wafer W. The rotation holding portion 50 includes a rotation driving portion 52, a shaft 53, and a holding portion 54.

[0056] The rotation driving portion 52 is configured to rotate the shaft 53 based on an operation signal from the control device 100. The rotation driving portion 52 includes, for example, a power source such as a motor. The holding portion 54 is provided at the front end of the shaft 53. The wafer W is placed on the upper surface of the holding portion 54. The holding portion 54 is configured to hold the wafer W substantially horizontally, for example, by adsorption or the like. The holding portion 54 rotates the wafer W around a central axis (rotation axis) Ax1 perpendicular to the surface Wa of the wafer W in a state where the posture of the wafer W is substantially horizontal.

[0057] The liquid supply portion 60 supplies the processing liquid L1 to the surface Wa of the wafer W held by the rotation holding portion 50. The liquid supply portion 60 includes a liquid source 61, a pipe 62, a holding pedestal 63, a nozzle 64, and a nozzle driving portion 65. The liquid source 61 is a supply source of the processing liquid L1. The pipe 62 connects the liquid source 61 and the nozzle 64, and guides the processing liquid L1 from the liquid source 61 to the nozzle 64. A valve is provided in the pipe 62, and is configured to be opened and closed based on an operation signal from the control device 100.

[0058] The holding pedestal 63 is configured to hold the nozzle 64. The nozzle 64 is configured to be able to eject the processing liquid L1. The nozzle 64 is configured to eject the processing liquid L1 from the liquid source 61 toward the surface Wa of the wafer W in a state where the nozzle 64 is disposed above the wafer W held by the rotation holding portion 50. The nozzle driving portion 65 is connected to the holding pedestal 63. The nozzle driving portion 65 is configured to move the holding pedestal 63 in a horizontal direction or a vertical direction based on an operation signal from the control device 100. The nozzle 64 moves along with the movement of the holding pedestal 63.

[0059] The liquid supply portion 60 can include one or more other nozzles in addition to the nozzle 64. The one or more other nozzles can be held by the holding pedestal 63 together with the nozzle 64. In a case where one or more other nozzles are provided in addition to the nozzle 64, the liquid supply portion 60 can be configured to supply the wafer W with a plurality of kinds of processing liquids including the processing liquid L1, the kinds of the processing liquids being different from each other.

[0060] The cup portion 70 is disposed so as to surround the holding portion 54, and is a member for receiving the processing liquid Ll. The cup portion 70 forms a processing space S I which is open at the upper end. The wafer W is supplied with the processing liquid Ll in a state in which the wafer W is disposed in the processing space S I. The cup portion 70 receives the processing liquid Ll after the processing liquid Ll is supplied to the wafer W by the liquid supply portion 60. The cup portion 70 is configured to collect the processing liquid Ll which is scattered around from the outer periphery of the wafer W in a state in which the wafer W is rotated by the rotation holding portion 50. A liquid discharge port 71 and an exhaust port 72 are provided at the bottom of the cup portion 70.

[0061] The liquid discharge port 71 is an opening for discharging the processing liquid Ll collected by the cup portion 70 to the outside of the cup portion 70 (the outside of the processing space S I). A liquid discharge device which guides the processing liquid Ll to the outside of the wafer processing system 1 is connected to the liquid discharge port 71. Details of the liquid discharge device are described later. The exhaust port 72 is an opening for discharging gas in the cup portion 70 to the outside of the cup portion 70 (the outside of the processing space S I). For example, gas generated in association with the supply of the processing liquid Ll to the wafer W is discharged from the exhaust port 72. A pipe 79 for guiding the gas discharged from the cup portion 70 through the exhaust port 72 to the outside of the wafer processing system 1 can also be connected to the exhaust port 72.

[0062] The cleaning tank 80 is a member for cleaning the nozzle 64 with a cleaning liquid. Sometimes the processing liquid Ll is also sprayed from the nozzle 64 into the cleaning tank 80. The cleaning tank 80 is disposed at a position different from the cup portion 70 inside the housing 49. When viewed from above (from directly above), the cleaning tank 80 is disposed so as not to overlap the cup portion 70. The cleaning tank 80 includes a container which can accommodate a cleaning liquid for cleaning the nozzle 64. The container of the cleaning tank 80 forms a space S2 which is open at the upper end, and stores the cleaning liquid in the space S2. Cleaning of the nozzle 64 is performed by immersing at least a portion of the nozzle 64 in the cleaning liquid stored in the cleaning tank 80.

[0063] A liquid discharge port for discharging the cleaning liquid and the processing liquid Ll sprayed from the nozzle 64 is formed at the bottom of the container of the cleaning tank 80. A pipe for guiding the processing liquid Ll sprayed from the nozzle 64 and the cleaning liquid used after cleaning of the nozzle 64 from the space S2 of the cleaning tank 80 to the outside of the wafer processing system 1 is connected to the liquid discharge port.

[0064] In Figure 3The diagram shows a rotating holding section 50 and a corresponding cup section 70, but the liquid processing apparatus U1 may also have two rotating holding sections 50 and two cup sections 70. One set of rotating holding sections 50 and cup sections 70 is positioned differently from another set of rotating holding sections 50 and cup sections 70. Alternatively, the nozzle 64 may be movable between a position capable of spraying processing liquid L1 onto a wafer W held in a holding section 54 of one rotating holding section 50 and a position capable of spraying processing liquid L1 onto a wafer W held in a holding section 54 of another rotating holding section 50.

[0065] (drainage device)

[0066] like Figure 4 As shown, the wafer processing system 1 includes a drain device 110. The drain device 110 is a device that drains at least the processing liquid L1 to the outside of the wafer processing system 1. The drain device 110 drains the processing liquid L1 collected in at least one cup 70 to the outside of the wafer processing system 1. The drain device 110 may also drain the processing liquid L1 collected in two or more cups 70 respectively to the outside of the wafer processing system 1. Regarding the two or more cups 70, it may include two or more cups 70 included in one liquid processing device U1, or it may include one or more cups 70 included in one liquid processing device U1 and one or more other cups 70 included in another liquid processing device U1.

[0067] exist Figure 4 In the example shown, the draining device 110 drains the processed liquid L1 from two cup portions 70 (a total of four cup portions 70) of each of the two liquid processing devices U1 arranged in two adjacent layers 31 in the vertical direction. Furthermore, in Figure 4 The cleaning tank 80 is omitted. While considering the liquid processing unit U1 located in the upper layer, other liquid processing units U1 exist as other processing units in the lower layer 31. Therefore, it is difficult to place a portion of the piping used to guide the processing liquid L1 from the cup portion 70 of the liquid processing unit U1 located in the upper layer to the outside of the wafer processing system 1 inside the lower layer 31. Thus, in Figure 4 In the example shown, at least a portion of the piping included in the drainage device 110 is configured substantially horizontally.

[0068] Below, refer to Figures 5 to 8 A specific example of the draining device 110 will be described below. For ease of explanation, an example will be used in which the processing liquid L1 from two cups 70 provided in a liquid processing device U1 is drained to the outside of the wafer processing system 1. In the following description, one of the two cups 70 will be referred to as "cup 70A" and the other cup 70 will be referred to as "cup 70B". Figure 5The illustrated drain device 110 drains the treated liquid L1 from the cup portions 70A and 70B to the outside of the wafer processing system 1, and also drains the washed cleaning liquid disposed in the cleaning tank 80 of the liquid processing device U1 to the outside of the wafer processing system 1.

[0069] The drain device 110 includes a drain pipe 112, a connection pipe 120A, a connection pipe 120B, and a connection pipe 122. In the present disclosure, the expressions "upstream" and "downstream" are used with reference to the flow direction of the liquid including the treated liquid L1. In the drain device 110, the liquid including the treated liquid L1 moves from the upstream toward the downstream. The connection pipe 120A and the connection pipe 120B are sometimes collectively referred to as "connection pipe 120".

[0070] The drain pipe 112 is a pipe for guiding the treated liquid L1 after use in liquid processing by the liquid processing device U1 to the outside of the wafer processing system 1. The treated liquid L1 after liquid processing is introduced from the cup portions 70A and 70B to the drain pipe 112, and the treated liquid L1 and the cleaning liquid are introduced from the cleaning tank 80 to the drain pipe 112.

[0071] At least a portion of the drain pipe 112 is disposed substantially horizontally. In the present disclosure, the phrase "substantially horizontally disposed" means a state in which the angle (elevation angle) of the central axis of the pipe with respect to the horizontal plane is -5° to +5°. The angle of the substantially horizontally disposed portion of the drain pipe 112 with respect to the horizontal plane can be -3° to +3°, or -2° to +2°, or -1° to +1°. The substantially horizontal portion of the drain pipe 112 can also be disposed so as to be higher on the upstream side than on the downstream side.

[0072] The connection pipe 120A is a pipe for guiding the treated liquid L1 from the cup portion 70A to the drain pipe 112. The end portion of the upstream side of the connection pipe 120A is connected to the drain port 71 provided to the cup portion 70A. The treated liquid L1 is drained from the end portion of the downstream side of the connection pipe 120A. The connection pipe 120A is disposed in such a manner that the treated liquid L1 drained from the end portion of the downstream side of the connection pipe 120A is introduced to the drain pipe 112.

[0073] The connection pipe 120B is a pipe for guiding the treated liquid L1 from the cup portion 70B to the drain pipe 112. The end portion of the upstream side of the connection pipe 120B is connected to the drain port 71 provided to the cup portion 70B. The treated liquid L1 is drained from the end portion of the downstream side of the connection pipe 120B. The connection pipe 120B is disposed in such a manner that the treated liquid L1 drained from the end portion of the downstream side of the connection pipe 120B is introduced to the drain pipe 112.

[0074] The connection pipe 122 is a pipe for guiding the liquid containing the treatment liquid L1 from the cleaning tank 80 to the liquid discharge pipe 112. The end portion of the connection pipe 122 on the upstream side is connected to the liquid discharge port provided to the cleaning tank 80. The liquid containing the treatment liquid L1 is discharged from the end portion on the downstream side of the connection pipe 122. The connection pipe 122 is provided in such a manner that the liquid containing the treatment liquid L1 discharged from the end portion on the downstream side of the connection pipe 122 is introduced into the liquid discharge pipe 112.

[0075] In Figure 5 the example shown, in the flow path of the liquid discharge pipe 112, the introduction portions are arranged in the order of the introduction portion from which the treatment liquid L1 is introduced from the connection pipe 120A, the introduction portion from which the liquid containing the treatment liquid L1 is introduced from the connection pipe 122, and the introduction portion from which the treatment liquid L1 is introduced from the connection pipe 120B, from the upstream. The introduction portions can also be arranged in an order different from that of the example shown in the flow path of the liquid discharge pipe 112. Figure 5

[0076] The liquid discharge device 110 is provided with one or more air-tight portions 200. In Figure 5 the example shown, the liquid discharge device 110 is provided with four air-tight portions 200. The air-tight portion 200 is configured to be provided to a connection portion between the liquid discharge pipe 112 and another pipe, at which connection portion the liquid is allowed to move between the outside and the inside of the liquid discharge pipe 112, to prevent the inflow of gas from the outside to the inside of the liquid discharge pipe 112.

[0077] One air-tight portion 200 is arranged in correspondence with the cup portion 70A. For the sake of convenience of explanation, the air-tight portion 200 in correspondence with the cup portion 70A is described as "air-tight portion 200A". The air-tight portion 200A maintains a state in which gas is not allowed to pass between the liquid discharge pipe 112 and the connection pipe 120A. The air-tight portion 200A is configured not to allow gas to pass from the liquid discharge pipe 112 to the connection pipe 120A, and not to allow gas to pass from the connection pipe 120A to the liquid discharge pipe 112. In addition, the air-tight portion 200A allows the treatment liquid L1 to flow from the connection pipe 120A to the liquid discharge pipe 112.

[0078] One air-tight portion 200 is arranged in correspondence with the cup portion 70B. For the sake of convenience of explanation, the air-tight portion 200 in correspondence with the cup portion 70B is described as "air-tight portion 200B". The air-tight portion 200B maintains a state in which gas is not allowed to pass between the liquid discharge pipe 112 and the connection pipe 120B. The air-tight portion 200B is configured not to allow gas to pass from the liquid discharge pipe 112 to the connection pipe 120B, and not to allow gas to pass from the connection pipe 120B to the liquid discharge pipe 112. In addition, the air-tight portion 200B allows the treatment liquid L1 to flow from the connection pipe 120B to the liquid discharge pipe 112.

[0079] ​As described above, in the liquid discharge device 110, the connection pipe 120 and the airtight portion 200 are provided corresponding to each of the plurality of cup portions 70. The treatment liquid L1 discharged from each of the plurality of cup portions 70 is introduced into the liquid discharge pipe 112 via the corresponding connection pipe 120 and airtight portion 200.

[0080] An airtight portion 200 is provided corresponding to the cleaning tank 80. For convenience of explanation, the airtight portion 200 corresponding to the cleaning tank 80 is described as "airtight portion 200C". The airtight portion 200C (second airtight portion) maintains a state in which gas does not flow between the liquid discharge pipe 112 and the connection pipe 122 (second connection pipe). The airtight portion 200C is configured so as not to allow gas to flow from the liquid discharge pipe 112 to the connection pipe 122, and not to allow gas to flow from the connection pipe 122 to the liquid discharge pipe 112. In addition, the airtight portion 200C allows liquid containing the treatment liquid L1 to flow from the connection pipe 122 to the liquid discharge pipe 112.

[0081] The liquid discharge device 110 is connected to the liquid discharge apparatus 300. For example, the end portion of the liquid discharge pipe 112 on the downstream side of the liquid discharge device 110 is connected to the pipe of the liquid discharge apparatus 300. The liquid discharge apparatus 300 is an apparatus for collecting liquid discharge from a plurality of devices including the wafer processing system 1. The plurality of devices including the wafer processing system 1 can also include other wafer processing systems 1, and the liquid discharge collected at the liquid discharge apparatus 300 can also contain a chemical liquid other than the treatment liquid L1. Liquid containing the treatment liquid L1 is introduced from the end portion on the downstream side of the liquid discharge pipe 112 to the liquid discharge apparatus 300.

[0082] An airtight portion 200 is provided at the connection site between the liquid discharge apparatus 300 and the liquid discharge pipe 112. For convenience of explanation, the airtight portion 200 provided at the above-mentioned connection site is described as "airtight portion 200D". The airtight portion 200D (second airtight portion) maintains a state in which gas does not flow between the liquid discharge pipe 112 and the liquid discharge apparatus 300. The airtight portion 200D is configured so as not to allow gas to flow from the liquid discharge pipe 112 to the liquid discharge apparatus 300, and not to allow gas to flow from the liquid discharge apparatus 300 to the liquid discharge pipe 112. In addition, the airtight portion 200D allows liquid containing the treatment liquid L1 to flow from the liquid discharge pipe 112 to the liquid discharge apparatus 300.

[0083] In Figure 6A specific example of the gas-tight portion 200 configured in correspondence with the cup portion 70A or the cup portion 70B is shown in FIG. 6. The liquid discharge device 110 can also be provided with a joint portion 114 and a cover member 116. The joint portion 114 is provided on the flow path of the liquid discharge pipe 112 at a portion where the treatment liquid Ll from the connection pipe 120 is introduced. A portion of the liquid discharge pipe 112 and another portion of the liquid discharge pipe 112 are connected via the joint portion 114. The joint portion 114 is formed in a bottomed cylindrical shape to be able to receive the treatment liquid Ll from the connection pipe 120. The joint portion 114 forms a space that is open upward. The joint portion 114 includes a bottom wall and a side wall that extends upward from the outer edge of the bottom wall.

[0084] The end portion of the portion of the liquid discharge pipe 112 located on the upstream side from the joint portion 114 penetrates the above-mentioned side wall and is connected to the space inside the joint portion 114. The end portion of the portion of the liquid discharge pipe 112 located on the downstream side from the joint portion 114 penetrates the above-mentioned side wall and is connected to the space inside the joint portion 114. Liquid flowing from the upstream of the joint portion 114 moves in a manner that passes through the portion of the liquid discharge pipe 112, the joint portion 114, and the other portion of the liquid discharge pipe 112. The treatment liquid Ll introduced from the connection pipe 120 into the inside of the joint portion 114 moves to the portion of the liquid discharge pipe 112 connected at a position on the downstream side from the joint portion 114 after being introduced into the inside of the joint portion 114.

[0085] The cover member 116 is provided at the upper end of the joint portion 114 in a manner that does not allow external gas to flow into the space inside the joint portion 114. The connection pipe 120 penetrates the cover member 116 in a manner that the end portion on the downstream side of the connection pipe 120 is disposed in the space inside the joint portion 114.

[0086] The gas-tight portion 200 maintains a state in which gas does not flow between the liquid discharge pipe 112 and the connection pipe 120 by storing a liquid containing a solvent L2. The solvent L2 is a solvent capable of removing the treatment liquid Ll. The solvent L2 is, for example, an organic solvent such as a diluent. In a case where the treatment liquid Ll solidifies and adheres to the pipe, the solidified treatment liquid Ll is removed (dissolved) by causing the solvent L2 to flow through the pipe.

[0087] The gas-tight portion 200 can also include a container 202. The container 202 is disposed in the space formed by the joint portion 114 and the cover member 116. The container 202 stores a liquid containing the solvent L2. The container 202 is a bottomed cylinder that forms a space that is open upward. The container 202 is formed so that, when the amount of the liquid stored in the container 202 exceeds a prescribed level, a portion of the liquid is discharged to the outside of the container 202. For example, a discharge port or a cutout for discharge is formed in the side wall of the container 202. The container 202 can also be fixed to the cover member 116.

[0088] The end portion of the connection pipe 120 on the downstream side is configured to be immersed in the liquid containing the solvent L2 stored in the container 202. The portion of the connection pipe 120 including the end portion on the downstream side can extend in the vertical direction. The liquid containing the solvent L2 is stored in the container 202 in a manner such that the opening provided at the end portion of the connection pipe 120 on the downstream side is lower than the upper surface of the liquid. The liquid containing the solvent L2 is immersed in the end portion of the connection pipe 120 on the downstream side.

[0089] As described above, the liquid containing the solvent L2 is stored in the container 202, and the end portion of the connection pipe 120 on the downstream side is immersed in the liquid, whereby the space in the connection pipe 120 is partitioned from the space in the liquid discharge pipe 112 (the space in the joint portion 114) by the liquid in the container 202. The flow of the gas in the connection pipe 120 to the space in the liquid discharge pipe 112 is prevented by the liquid in the container 202. It can also be said that the connection site of the connection pipe 120 and the liquid discharge pipe 112 (the joint portion 114) is sealed or closed by the liquid in the container 202.

[0090] The gas-tight portion 200 is configured to introduce the liquid containing the solvent L2 discharged from the container 202 into the liquid discharge pipe 112. The treatment liquid L1 discharged from the cup portion 70 flows through the connection pipe 120 and flows into the container 202. When the treatment liquid L1 flows into the container 202, the liquid level in the container 202 rises, and a portion of the liquid in the container 202 is discharged into the joint portion 114 and introduced into the liquid discharge pipe 112. Thus, at least a portion of the solvent L2 stored in the container 202 is introduced into the liquid discharge pipe 112. The treatment liquid L1 introduced from the connection pipe 120 into the container 202 is mixed with the solvent L2.

[0091] In Figure 7 and Figure 8 , specific examples of the gas-tight portion 200 configured in correspondence with the cup portion 70A or the cup portion 70B are shown. In the examples shown in Figure 7 and Figure 8 , the container 202 is configured inside the liquid discharge pipe 112, not in the joint portion 114. The container 202 is fixed to the inner wall of the liquid discharge pipe 112, for example, by a fixing member. Figure 7 In , a case where the treatment liquid L1 is not discharged from the cup portion 70 is schematically illustrated. The space in the connection pipe 120 and the space in the liquid discharge pipe 112 are partitioned by the liquid stored in the container 202.

[0092] Figure 8 In Figure 8In the example shown, when the treatment liquid L1 is discharged into the container 202 via the connection pipe 120, the liquid in the container 202 overflows, and the overflowed liquid is introduced into the liquid accumulated in the inner wall of the liquid discharge pipe 112.

[0093] Returning to Figure 5 , the air-tight portion 200 (air-tight portion 200C) between the connection pipe 122 connected to the cleaning tank 80 and the liquid discharge pipe 112 can also have the configuration exemplified in Figure 6 or Figure 7 In the air-tight portion 200C, the end portion of the downstream side of the connection pipe 122 is immersed in the liquid in the container 202.

[0094] The air-tight portion 200 (air-tight portion 200D) between the end portion of the downstream side of the liquid discharge pipe 112 and the liquid discharge apparatus 300 can also have the configuration exemplified in Figure 6 or Figure 7 In the air-tight portion 200D, the end portion of the downstream side of the liquid discharge pipe 112 is immersed in the liquid in the container 202. In addition, the liquid discharged from the container 202 is introduced into the pipe of the liquid discharge apparatus 300, and not into the liquid discharge pipe 112.

[0095] In the liquid discharge device 110 configured as above, by the sealing by the air-tight portion 200, gas (air) does not flow from the outside of the liquid discharge pipe 112 into the liquid discharge pipe 112. Thereby, the inside of the liquid discharge pipe 112 is maintained as an atmosphere of the solvent L2 (for example, an atmosphere of a diluent). In this case, in the inside of the liquid discharge pipe 112, the components of the solvent L2 volatilized remain without flowing to the outside. Thereby, the treatment liquid L1 introduced into the liquid discharge pipe 112 does not easily solidify by drying in the inside of the liquid discharge pipe 112, and is discharged to the liquid discharge apparatus 300 together with the solvent L2.

[0096] The liquid discharge device 110 can also have one or more solvent replenishing portions 130. In the case where two or more air-tight portions 200 are provided, one solvent replenishing portion 130 is provided corresponding to each of the two or more air-tight portions 200. The solvent replenishing portion 130 is capable of replenishing the solvent L2 to the air-tight portion 200. The solvent replenishing portion 130 is configured to be capable of supplying the solvent L2 into the container 202 of the air-tight portion 200 (also refer to Figures 6 to 8 ). The solvent replenishing portion 130 can supply the solvent L2 into the container 202 via a portion of the pipe whose end portion of the downstream side is immersed in the liquid in the container 202. Even if the idle state in which the liquid discharge from the cup portion 70 and the cleaning tank 80 is not performed is not continued, the one or more solvent replenishing portions 130 can replenish the solvent L2 so that the solvent L2 remains in the liquid discharge pipe 112.

[0097] The attention is drawn to the air-tight portion 200 between the connection pipe 120 and the drain pipe 112. The surface of the liquid in the end portion on the downstream side of the connection pipe 120 is exposed to the atmosphere (external gas) outside the drain pipe 112 via the inside of the connection pipe 120. Therefore, if the idle state in which the treatment liquid L1 is not drained from the cup portion 70 via the connection pipe 120 continues, the water level of the liquid in the end portion on the downstream side of the connection pipe 120 gradually decreases. As a result, the water level of the liquid in the container 202 also decreases. It is assumed that when the water level of the liquid in the container 202 decreases to be lower than the position of the opening of the end portion on the downstream side of the connection pipe 120, the state sealed by the liquid in the container 202 (the state of being airtight) is released. To avoid this, the solvent replenishing portion 130 supplies the solvent L2 to the container 202 based on the operation signal from the control device 100 to replenish the solvent L2 in the container 202.

[0098] The drain device 110 can also be provided with an open line 140. The open line 140 is a line that can open the inside of the drain pipe 112 to the atmosphere (external gas). The open line 140 is provided with an open / close valve 140a. The open / close valve 140a is opened and closed based on the operation signal from the control device 100 to switch the inside of the drain pipe 112 between the state in which it is opened by the open line 140 and the state in which it is not opened by the open line 140. For example, during at least a part of the period in which the solvent L2 is replenished to the container 202 of the air-tight portion 200 by the solvent replenishing portion 130, the inside of the drain pipe 112 is opened to the atmosphere by the open line 140.

[0099] The inside of the drain pipe 112 is opened by the open line 140, and thus the state in which the inside of the drain pipe 112 is maintained as the solvent L2 atmosphere is temporarily released. As such, the inside of the drain pipe 112 is maintained as the solvent atmosphere does not necessarily mean that the solvent atmosphere is always maintained during the operation of the wafer processing system 1.

[0100] The drain device 110 can also be provided with a solvent supply portion 150. The solvent supply portion 150 is a portion that can supply the solvent L2 to the end portion on the upstream side of the drain pipe 112. The solvent L2 supplied by the solvent supply portion 150 passes through the inside of the drain pipe 112 and flows to the drain equipment 300. Thus, the inside of the drain pipe 112 is cleaned. The solvent supply portion 150 can supply a large amount of the solvent L2 to the inside of the drain pipe 112 from the end portion on the upstream side to clean the entire inside of the drain pipe 112. A member for preventing the backflow of the solvent L2 to the cup portion 70 and the cleaning tank 80 during the cleaning of the inside of the drain pipe 112 with the solvent L2 from the solvent supply portion 150 can be provided at each connection pipe of the drain device 110.

[0101] The number of cup portions 70 and the number of cleaning tanks 80 as targets of liquid discharge by the liquid discharge device 110 are not limited to those in the example shown in FIG. 1. The processing liquid L1 can be discharged from one cup portion 70 to the liquid discharge pipe 112 of the liquid discharge device 110, and the processing liquid L1 can be discharged from three or more cup portions 70. It can also be that the liquid from the cleaning tank 80 is not discharged to the liquid discharge pipe 112, and it can also be that the liquid from two or more cleaning tanks 80 is discharged to the liquid discharge pipe 112. The processing liquid L1 can be discharged from the cup portion 70 of each liquid processing device U1 provided in two or more liquid processing devices U1 to the liquid discharge pipe 112. Figure 5 The number of cup portions 70 and the number of cleaning tanks 80 as targets of liquid discharge by the liquid discharge device 110 are not limited to those in the example shown in FIG. 1. The processing liquid L1 can be discharged from one cup portion 70 to the liquid discharge pipe 112 of the liquid discharge device 110, and the processing liquid L1 can be discharged from three or more cup portions 70. It can also be that the liquid from the cleaning tank 80 is not discharged to the liquid discharge pipe 112, and it can also be that the liquid from two or more cleaning tanks 80 is discharged to the liquid discharge pipe 112. The processing liquid L1 can be discharged from the cup portion 70 of each liquid processing device U1 provided in two or more liquid processing devices U1 to the liquid discharge pipe 112.

[0102] (Hardware structure of control device)

[0103] Figure 9 is a block diagram illustrating a hardware structure of the control device 100. As shown in Figure 9 , the control device 100 has a circuit 101. The circuit 101 has a processor 102, a memory 103, a storage device 104, a timer 105, and an input / output port 106.

[0104] The storage device 104 is constituted by one or more non-volatile memory devices such as a flash memory or a hard disk. The storage device 104 stores a program for causing the wafer processing system 1 (device) to execute the substrate processing method described later. The memory 103 is constituted by one or more volatile memory devices such as a random access memory. The memory 103 temporarily stores the program loaded from the storage device 104.

[0105] The processor 102 is constituted by one or more arithmetic devices such as a CPU (Central Processing Unit) or a GPU (Graphics Processing Unit). The processor 102 executes the program loaded to the memory 103. The arithmetic result of the processor 102 is temporarily saved to the memory 103. The timer 105 measures elapsed time by counting of clock pulses. The input / output port 106 performs input and output of electric signals with the liquid processing device U1, the liquid discharge device 110, and the like in response to a request from the processor 102.

[0106] (Substrate processing method)

[0107] Next, an example of a substrate processing method of performing a prescribed process on the wafer W using the wafer processing system 1 will be described. The substrate processing method includes a liquid processing step, a discharge step, and a maintenance step. The liquid processing step includes performing liquid processing on the wafer W using the processing liquid L1 in a state where the wafer W is held by the holding portion 54 surrounded by the cup portion 70. The discharge step includes discharging the processing liquid L1 used in the liquid processing of the liquid processing step to the outside of the wafer processing system 1 via the liquid discharge pipe 112 and the connection pipe 120. The maintenance step includes maintaining the inside of the liquid discharge pipe 112 as an atmosphere capable of removing the solvent L2 of the processing liquid L1 while maintaining a state where gas does not flow between the liquid discharge pipe 112 and the connection pipe 120.

[0108] The control device 100 can also control the liquid discharge device 110 to perform the maintenance step concurrently with the discharge step. The control device 100 can also control the liquid discharge device 110 to perform the maintenance step during a period overlapping at least a part of a period during which the discharge step is not performed.

[0109] The above-described substrate processing method can also include a replenishment step. The replenishment step includes replenishing the gas-tight portion 200 with the solvent L2 from the solvent replenishment portion 130. In Figure 10 An example of a series of processes performed by the control device 100 in the replenishment step is illustrated in (a) above.

[0110] The control device 100 performs step S11 when an idle state in which the liquid discharge pipe 112 of the liquid discharge device 110 is not discharged from any member such as the cup portion 70 starts. In step S11, the control device 100 waits, for example, from a time point at which the idle state starts until a prescribed time elapses. The prescribed time is set to, for example, a time shorter than a time in which the sealing by the liquid containing the solvent L2 in the gas-tight portion 200 can be released.

[0111] Next, the control device 100 performs step S12. In step S12, the control device 100 switches, for example, the open-close valve 140a of the open line 140 from a closed state to an open state to open the atmosphere inside the liquid discharge pipe 112 to the atmosphere. Next, the control device 100 performs step S13. In step S13, the control device 100 controls, for example, the solvent replenishment portion 130 to replenish the container 202 of the gas-tight portion 200 with the solvent L2.

[0112] Next, the control device 100 performs step S14. In step S14, the control device 100 switches, for example, the open-close valve 140a from the open state to the closed state to stop the state of opening the inside of the liquid discharge pipe 112 to the atmosphere. By performing step S14, the inside of the liquid discharge pipe 112 returns to a state maintained as an atmosphere of the solvent L2.

[0113] In a case where the liquid discharge device 110 is provided with two or more air-tight portions 200, the control device 100 can also perform the series of processes of steps S11 to S14 for each air-tight portion 200. In this case, the prescribed time of step S11 can also be set for each air-tight portion 200. The control device 100 can also perform the series of processes of steps S11 to S14 for two or more air-tight portions 200. In this case, in step S13, the solvent L2 is supplied from the two or more solvent supply portions 130 to the two or more air-tight portions 200.

[0114] The substrate processing method described above can also include a cleaning process. The cleaning process includes supplying the solvent L2 from the solvent supply portion 150 to the end portion of the upstream side of the liquid discharge pipe 112 to clean the inside of the liquid discharge pipe 112. In Figure 10 The series of processes performed by the control device 100 in the cleaning process is exemplified in (b) of the above.

[0115] The control device 100 performs step S21 when an idle state in which no liquid is discharged from the liquid discharge pipe 112 by any of the cup portions 70 and the like is started. In step S21, the control device 100 waits, for example, until a user input is input to the control device 100 from an operator who instructs cleaning of the inside of the liquid discharge pipe 112. The operator such as the operator of the wafer processing system 1 observes the state of the liquid discharge pipe 112 to instruct cleaning of the inside of the liquid discharge pipe 112, for example.

[0116] Next, the control device 100 performs step S22. In step S22, the control device 100 controls the liquid discharge device 110 to close each of the connection pipes 120 and 122 connected to the liquid discharge pipe 112, for example, in order to prevent the solvent L2 from flowing backward from the liquid discharge pipe 112 to the cup portions 70 and the like. Next, the control device 100 performs step S23. In step S23, the control device 100 controls the solvent supply portion 150 to supply the solvent L2 into the liquid discharge pipe 112 to perform cleaning, for example.

[0117] <Modification Example>

[0118] The case where the liquid discharge device 110 discharges a treatment liquid L1 that is a chemical liquid for forming a resist film has been described, but the liquid discharge device 110 can also discharge a treatment liquid other than the chemical liquid for forming a resist film to the outside of the wafer processing system 1. The solvent for sealing in the air-tight portion 200 can be selected according to the kind of the chemical liquid discharged by the liquid discharge device 110. At least a part of the matters described in the other examples can be combined in one of the various examples described above.

[0119] <Summary of the Disclosure>

[0120] The present disclosure includes the structures and methods of (1) to (13) below.

[0121] [1] A substrate processing apparatus (1) that performs a prescribed process on a substrate (W), the substrate processing apparatus (1) comprising: a holding section (54) for holding the substrate (W) when performing a liquid process on the substrate (W) using a processing liquid (Ll); a cup section (70) disposed so as to surround the holding section (54) for receiving the processing liquid (Ll); a liquid discharge pipe (112) for guiding the processing liquid (Ll) after use in the liquid process to the outside of the substrate processing apparatus (1); a connection pipe (120, 120A, 120B) for guiding the processing liquid (Ll) from the cup section (70, 70A, 70B) to the liquid discharge pipe (112); and a gas-tight section (200, 200A, 200B) that maintains a state in which gas does not flow between the liquid discharge pipe (112) and the connection pipe (120, 120A, 120B), wherein the inside of the liquid discharge pipe (112) is maintained in an atmosphere in which a solvent (L2) of the processing liquid (Ll) is removed.

[0122] It is also possible to not seal the space inside the liquid discharge pipe, but to consider a method in which the processing liquid discharged from the cup section is guided to a liquid discharge device via the liquid discharge pipe to perform liquid discharge. In this method, outside air flows into the liquid discharge pipe, and thus the processing liquid is solidified by drying in the inside of the liquid discharge pipe, and the solidified product of the processing liquid adheres to the inner wall of the pipe. When solidified on the inner wall of the pipe, it causes clogging, and thus a large amount of a diluent or the like solvent needs to be supplied to the inside of the liquid discharge pipe to perform cleaning.

[0123] In contrast, in the above-described substrate processing apparatus (1), the inside of the liquid discharge pipe (112) is maintained in an atmosphere of the solvent (L2). Thus, even if the processing liquid Ll is discharged to the liquid discharge pipe 112, it is not easily solidified by drying, and the amount of the solidified product of the processing liquid Ll adhering to the inner wall of the pipe is reduced. As a result, it is possible to reduce the amount of the solvent used for cleaning the inside of the liquid discharge pipe. Thus, the above-described substrate processing apparatus (1) is useful for reducing the amount of use of the solvent (L2) used for cleaning the inside of the liquid discharge pipe.

[0124] [2] The substrate processing apparatus (1) according to the above-described [1], wherein the processing liquid (Ll) is a chemical liquid for forming a resist film on a surface (Wa) of the substrate (W).

[0125] As a result of the inventors of the present application verifying, even after several hours when the resist liquid is discharged into the drain piping opened to the atmosphere, a residue of the resist liquid was observed even when a diluent that is supplied in a relatively large amount was used as the solvent. That is, it was confirmed that a large amount of solvent is required to remove the solidified product of the resist liquid remaining in the drain piping using the solvent. On the other hand, in the substrate processing apparatus (1) described above, the resist liquid is less likely to solidify inside the drain piping (112). Therefore, the amount of use of the solvent (L2) such as a diluent for cleaning the residue from the resist liquid can be reduced.

[0126] [3] The substrate processing apparatus (1) according to the above [1], wherein the gas-tight portion (200, 200A, 200B) maintains a state in which the drain piping (112) and the connection piping (120, 120A, 120B) are not communicated with each other by storing a liquid containing the solvent (L2).

[0127] In this case, the drain piping (112) can be sealed in a manner that does not hinder the inflow of the processing liquid L1 from the connection piping (120) to the drain piping (112).

[0128] [4] The substrate processing apparatus (1) according to the above [3], wherein the gas-tight portion (200, 200A, 200B) includes a container (202) for storing the liquid, and an end portion of the connection piping (120) on a downstream side is configured to be immersed in the liquid in the container (202).

[0129] In this case, the inside of the connection piping 120 and the inside of the drain piping 112 are blocked by the liquid stored in the container (202). Thus, inflow of external gas to the drain piping (112) can be prevented.

[0130] [5] The substrate processing apparatus (1) according to the above [4], wherein the gas-tight portion (200, 200A, 200B) is configured to introduce the liquid discharged from the container (202) to the drain piping (112).

[0131] In this case, the processing liquid (L1) discharged from the cup portion (70) can be smoothly guided to the drain piping (112) while maintaining a state in which the drain piping (112) is sealed.

[0132] [6] The substrate processing apparatus (1) according to any one of the above [3] to [5], further comprising a solvent replenishing portion (130) that can replenish the gas-tight portion (200, 200A, 200B) with the solvent (L2).

[0133] A portion of the liquid containing the solvent (L2) stored in the airtight portion (200) is in contact with the outside air via the connection pipe (120). Therefore, if the state in which the treated liquid (L1) is not discharged is continued, the seal of the liquid to the airtight portion (200) can be released. In contrast, by replenishing the solvent (L2) using the solvent replenishing portion (130), it is possible to avoid the seal structure from not functioning due to the portion of the liquid being in contact with the outside air.

[0134] [7] The substrate processing apparatus (1) according to any one of the above [1] to [6], wherein at least a portion of the liquid discharge pipe (112) is arranged substantially horizontally.

[0135] From the viewpoint of discharging the treated liquid L2 to the downstream side, it is preferable to incline the liquid discharge pipe (112). On the other hand, from the viewpoint of compactification of the substrate processing apparatus 1, at times, at least a portion of the liquid discharge pipe (112) is arranged substantially horizontally. The solidification due to drying further becomes a problem with the treated liquid (L1) remaining at the portion arranged substantially horizontally. That is, it is necessary to clean the inside of the liquid discharge pipe with the solvent at a shorter interval. Therefore, it is more advantageous to maintain the inside of the liquid discharge pipe (112) as a solvent atmosphere as in the present substrate processing apparatus (1).

[0136] [8] The substrate processing apparatus (1) according to any one of the above [1] to [7], further comprising a solvent supply portion (150) capable of supplying the solvent (L2) to the end portion of the upstream side of the liquid discharge pipe (112).

[0137] In this case, even if the treated liquid L1 solidifies and adheres to the inner wall of the liquid discharge pipe (112), the adhered solidification can be removed.

[0138] [9] The substrate processing apparatus (1) according to any one of the above [1] to [8], further comprising: a cleaning tank (80) that cleans a nozzle (64) capable of discharging the treated liquid (L1); a second connection pipe (122) for guiding the liquid containing the treated liquid (L1) from the cleaning tank (80) to the liquid discharge pipe (112); and a second airtight portion (200, 200C) that maintains a state in which gas does not flow between the liquid discharge pipe (112) and the second connection pipe (122).

[0139] In this case, it is possible to close the liquid discharge pipe 112 while also discharging the liquid from the cleaning tank 80.

[0140]

[10] The substrate processing apparatus (1) according to any one of the above [1] to [8], wherein an end portion of the liquid discharge pipe (112) on a downstream side is connected to a liquid discharge device (300), liquid discharges from a plurality of apparatuses including the substrate processing apparatus (1) are collected at the liquid discharge device (300), and the substrate processing apparatus (1) further includes a second airtight portion (200, 200D) that maintains a state in which gas does not flow between the liquid discharge pipe (112) and the liquid discharge device (300).

[0141] In this case, even if air is to flow into the inside of the liquid discharge pipe (112) due to the liquid discharge device (300), the air is prevented by the second airtight portion (200, 200D). Thus, it is possible to set the liquid discharge pipe 112 in a state in which the liquid discharge pipe 112 is more reliably sealed.

[0142]

[11] The substrate processing apparatus (1) according to any one of the above [1] to

[10] , wherein the substrate processing apparatus (1) further includes a plurality of cup portions (70) including a cup portion (70), and a connection pipe (120) and an airtight portion (200) are provided corresponding to the plurality of cup portions (70), respectively.

[0143] In this case, it is possible to discharge the processing liquid (L1) from the plurality of cup portions (70), and thus it is possible to efficiently discharge the processing liquid (L1) in addition to being able to reduce the amount of use of the solvent.

[0144]

[12] A substrate processing method of performing a prescribed processing on a substrate (W) using a substrate processing apparatus (1), the substrate processing method including: performing a liquid processing on the substrate (W) using a processing liquid (L1) while the substrate (W) is held in a holding portion (54) surrounded by a cup portion (70); discharging the processing liquid (L1) used in the liquid processing to the outside of the substrate processing apparatus (1) via a connection pipe (120) connected to the cup portion (70) and a liquid discharge pipe (112); and maintaining the inside of the liquid discharge pipe (112) in an atmosphere in which a solvent (L2) of the processing liquid (L1) can be removed while maintaining a state in which gas does not flow between the liquid discharge pipe (112) and the connection pipe (120).

[0145] As with the above substrate processing apparatus (1), this substrate processing method is useful for reducing the amount of use of the solvent (L2) for cleaning the inside of the liquid discharge pipe.

[0146]

[13] A computer-readable storage medium storing a program for causing an apparatus to execute the substrate processing method according to the above

[12] .

[0147] Explanation of Reference Signs

[0148] 1: wafer processing system; W: wafer; Wa: surface; U1: liquid processing device; L1: processing liquid; 54: holding portion; 64: nozzle; 70, 70A, 70B: cup portion; 80: cleaning tank; 110: liquid discharge device; 112: liquid discharge pipe; 120, 120A, 120B, 122: connection pipe; 130: solvent replenishing portion; 150: solvent supply portion; 200, 200A, 200B, 200C, 200D: airtight portion; 202: container; L2: solvent; 300: liquid discharge apparatus.

Claims

1. A substrate processing apparatus for performing a predetermined process on a substrate, the substrate processing apparatus comprising: A holding section is used to hold the substrate when liquid treatment is performed on the substrate using a processing liquid; A cup portion, which is configured to surround the retaining portion, is used to receive the treatment liquid; A drain pipe for guiding the processed liquid after use in the liquid treatment to the outside of the substrate processing apparatus; A connecting pipe for guiding the treatment liquid from the cup to the draining pipe; as well as An airtight section maintains a state in which no gas flows between the drainage pipe and the connecting pipe. The interior of the drain pipe is maintained in an atmosphere capable of removing the solvent from the treatment liquid.

2. The substrate processing apparatus according to claim 1, wherein, The treatment solution is a chemical solution used to form a resist coating on the surface of the substrate.

3. The substrate processing apparatus according to claim 1, wherein, The airtight section maintains a state in which no gas flows between the drain pipe and the connecting pipe by storing a liquid containing the solvent.

4. The substrate processing apparatus according to claim 3, wherein, The airtight section includes a container for storing the liquid. The downstream end of the connecting pipe is configured to be immersed in the liquid within the container.

5. The substrate processing apparatus according to claim 4, wherein, The airtight section is configured to guide the liquid discharged from the container into the drainage pipe.

6. The substrate processing apparatus according to any one of claims 3 to 5, wherein, It also includes a solvent replenishment unit, which is capable of replenishing the solvent to the airtight part.

7. The substrate processing apparatus according to any one of claims 1 to 5, wherein, At least a portion of the drainage piping is configured substantially horizontally.

8. The substrate processing apparatus according to any one of claims 1 to 5, wherein, It also includes a solvent supply unit, which is capable of supplying the solvent to the upstream end of the drain pipe.

9. The substrate processing apparatus according to any one of claims 1 to 5, wherein, It also has: A cleaning tank that cleans nozzles capable of spraying the treatment liquid; A second connecting pipe is used to guide the liquid containing the treatment fluid from the cleaning tank to the draining pipe; as well as The second airtight section maintains a state in which no gas flows between the drain pipe and the second connecting pipe.

10. The substrate processing apparatus according to any one of claims 1 to 5, wherein, The downstream end of the drain pipe is connected to a draining device, where drain water from multiple devices, including the substrate processing apparatus, is collected. The substrate processing apparatus further includes a second airtight section, which maintains a state in which no gas flows between the drain pipe and the draining device.

11. The substrate processing apparatus according to any one of claims 1 to 5, wherein, It also includes multiple cup portions, including the aforementioned cup portion. The connecting pipes and the airtight parts are respectively provided corresponding to the plurality of cup parts.

12. A substrate processing method, which is a substrate processing method for performing a predetermined processing on a substrate using a substrate processing apparatus, wherein the substrate processing method includes the following steps: While holding the substrate in a holding portion surrounded by a cup portion, liquid treatment is performed on the substrate using a processing liquid; The processing liquid used in the liquid processing is discharged to the outside of the substrate processing device via a connecting pipe connected to the cup and a drain pipe. as well as While maintaining a state in which no gas flows between the drain pipe and the connecting pipe, the interior of the drain pipe is maintained in an atmosphere capable of removing the solvent from the treatment liquid.

13. A computer-readable storage medium storing a program for causing a device to perform the substrate processing method according to claim 12.

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