Power supply device for driving and supplying power to silicon carbide field effect transistor

Abstract

The embodiment of the invention discloses a power supply device for driving power supply of a silicon carbide field effect transistor. The power supply device comprises a control module, at least one transformer and at least one output module, the transformer comprises a primary winding and a secondary winding unit, the control module is connected with the primary winding, the secondary winding unit comprises at least one secondary winding, each secondary winding comprises a positive winding and a negative winding, and each output module comprises a positive rectification filtering unit and a negative rectification filtering unit. The positive winding is connected with the positive rectification filtering unit to output a positive driving voltage required by the silicon carbide field effect transistor, and the negative winding is connected with the negative rectification filtering unit to output a negative driving voltage required by the silicon carbide field effect transistor. The problems that the negative voltage is unstable and the charging speed of the negative voltage capacitor is low due to the influence of the capacitor can be avoided, and it can be ensured that Sic Mos stably works in a high-frequency state.

Description

Technical Field

[0001] This invention relates to the field of power supply technology, and in particular to a power supply device for driving silicon carbide field-effect transistors. Background Technology

[0002] With the construction of next-generation industrial infrastructure such as AI, Industrial IoT, data centers, and new energy supercharging stations, the performance requirements for high-power power electronic devices are facing higher demands. Switching power supplies, as core components of electronic devices, are encountering unprecedented challenges. The market urgently needs products with long lifespan, high reliability, high efficiency, small size, low heat generation, low electromagnetic interference, and low cost. Against this backdrop, wide-bandgap power devices based on third-generation semiconductors have gained development opportunities due to their high-performance characteristics. Among them, SiC MOSFETs (Silicon Carbide Field-Effect Transistors) have outstanding advantages such as stable high-temperature performance, fast switching speed, and low parasitic capacitance, and are widely used in high-performance, high-frequency, high-power power supplies. However, SiC MOSFETs require negative voltage for reliable turn-off, with typical drive voltages of +18V and -5V. This power supply requirement necessitates the design of two power supply channels.

[0003] In existing SiC MOSFET driver power supply solutions, such as Figure 1 As shown, the output side typically uses an isolation winding L0 to form a positive voltage +V01 and a negative voltage -V02 through capacitors C01 and C02. However, the negative voltage -V02 is affected by the size of the capacitor and is prone to instability. In addition, the negative voltage capacitor charges slowly, which affects the establishment of the negative voltage and causes the SiC MOSFET to be unable to work at high frequencies. Summary of the Invention

[0004] This invention provides a power supply device for driving silicon carbide field-effect transistors. By using two windings to output positive and negative driving voltages respectively, the problem of unstable negative voltage caused by capacitor influence and slow charging speed of negative voltage capacitors can be avoided, thus ensuring that the SiC MOSFET operates stably at high frequency.

[0005] To achieve the above objectives, embodiments of the present invention provide a power supply device for driving silicon carbide field-effect transistors, including a control module, at least one transformer, and at least one output module;

[0006] The transformer includes a primary winding and a secondary winding unit. The control module is connected to the primary winding and is used to convert the DC power input to the primary winding into AC power. The secondary winding unit includes at least one secondary winding, and each secondary winding includes a positive winding and a negative winding. Each output module includes a positive rectifier and a negative rectifier and a filter unit. The positive winding is connected to the positive rectifier and filter unit to output the positive drive voltage required by the silicon carbide field-effect transistor, and the negative winding is connected to the negative rectifier and filter unit to output the negative drive voltage required by the silicon carbide field-effect transistor.

[0007] Furthermore, both the positive winding and the negative winding include an output terminal and a ground terminal. The positive winding and the negative winding are independent of each other, and the ground terminal of the positive winding and the ground terminal of the negative winding are connected and connected to a reference ground.

[0008] Furthermore, the secondary winding is a winding with a center tap, and the secondary winding is divided into a positive winding and a negative winding with the center tap as the dividing point.

[0009] Furthermore, the control module includes a control chip IC1, capacitors C1, C2, and C3, resistors R1, R2, R3, and R4, diode D1, and Zener diode D2; the primary winding includes a first input terminal and a second input terminal.

[0010] The EN and VIN pins of the control chip IC1, the positive terminal of capacitor C1, the positive terminal of Zener diode D2, and the first input terminal of the primary winding are all connected to the positive terminal of DC power. The GND pin of the control chip IC1, the negative terminal of capacitor C1, and the negative terminal of DC power are all grounded. The VCC pin of the control chip IC1 is grounded through capacitor C2. The SW pin of the control chip IC1 is connected to the positive terminal of DC power through resistor R1 and capacitor C3 in sequence. The second input terminal of the primary winding is connected to the SW pin, and the second input terminal is also connected to the RFB pin of the control chip IC1 through resistor R2. The negative terminal of Zener diode D2 is connected to the negative terminal of diode D1, and the positive terminal of diode D1 is connected to the second input terminal. The REF pin of the control chip IC1 is grounded through resistor R4 and connected to the TC pin of the control chip IC1 through resistor R3.

[0011] Furthermore, there are multiple transformers, and the primary windings of the multiple transformers are connected in series. The first input terminal of the primary winding of the first transformer is connected to the positive terminal of DC power, and the second input terminal of the primary winding of the last transformer is connected to the SW pin of the control chip IC1.

[0012] Furthermore, the number of transformers is two. The first and second input terminals of the primary winding of one transformer are respectively connected to the positive terminal of DC power and the first input terminal of the primary winding of the other transformer. The second input terminal of the primary winding of the other transformer is connected to the SW pin of the control chip IC1.

[0013] Each of the transformer's secondary winding units includes three secondary windings, and the number of output modules is the same as the number of secondary windings. Each secondary winding outputs a positive drive voltage and a negative drive voltage through an output module.

[0014] Furthermore, both the positive winding and the negative winding include an output terminal and a ground terminal; the positive rectifier filter unit includes a positive rectifier diode, a positive filter capacitor, and a positive Zener diode. The anode of the positive rectifier diode is connected to the output terminal of the positive winding, and the cathode of the positive rectifier diode is connected to the anode of the positive filter capacitor and the cathode of the positive Zener diode and is used to output a positive drive voltage. The cathode of the positive filter capacitor and the anode of the positive Zener diode are both connected to a reference ground.

[0015] The negative rectifier filter unit includes a negative rectifier diode, a negative filter capacitor, and a negative Zener diode. The negative terminal of the negative rectifier diode is connected to the output terminal of the negative winding. The positive terminal of the negative rectifier diode is connected to the negative terminal of the negative filter capacitor and the positive terminal of the negative Zener diode and is used to output a negative drive voltage. The positive terminals of the negative filter capacitor and the negative terminals of the negative Zener diode are both connected to the reference ground.

[0016] Beneficial Effects: The present invention provides a power supply device for driving silicon carbide MOSFETs, comprising a control module, at least one transformer, and at least one output module. The transformer includes a primary winding and a secondary winding unit. The control module is connected to the primary winding and is used to convert the DC power input to the primary winding into AC power. The secondary winding unit includes at least one secondary winding, each secondary winding including a positive winding and a negative winding. Each output module includes a positive rectifier and a negative rectifier and a filter unit. The positive winding is connected to the positive rectifier and filter unit to output the positive drive voltage required by the silicon carbide MOSFET, and the negative winding is connected to the negative rectifier and filter unit to output the negative drive voltage required by the silicon carbide MOSFET. Thus, this solution, by setting two windings (positive and negative) in the secondary winding to output the positive drive voltage and the negative drive voltage respectively, eliminates the need for capacitor voltage division, thereby avoiding the problems of unstable negative voltage and slow charging speed of negative voltage capacitors caused by capacitor influence, and ensuring that the SiC MOSFET operates stably at high frequencies. Attached Figure Description

[0017] The technical solution and its beneficial effects of the present invention will become apparent from the following detailed description of specific embodiments in conjunction with the accompanying drawings.

[0018] Figure 1This is a partial structural diagram of a SiC MOSFET drive power supply device in the prior art;

[0019] Figure 2 This is a schematic diagram of a power supply device for driving silicon carbide field-effect transistors according to the present invention.

[0020] Figure 3 This is a circuit diagram of a power supply device for driving silicon carbide field-effect transistors according to the present invention.

[0021] Figure 4 This is another structural schematic diagram of a power supply device for driving silicon carbide field-effect transistors according to the present invention. Detailed Implementation

[0022] Please refer to the diagrams, where the same component symbols represent the same components. The principles of the invention are illustrated by way of example implemented in a suitable computing environment. The following description is based on the illustrative specific embodiments of the invention and should not be construed as limiting the invention to other specific embodiments not detailed herein.

[0023] See Figure 2 A power supply device 100 for driving silicon carbide field-effect transistors according to an embodiment of the present invention includes a control module 10, at least one transformer and at least one output module 30.

[0024] Taking a transformer as an example, the power supply device 100 includes a transformer T1. The transformer T1 includes a primary winding L1 and at least one secondary winding unit, such as... Figure 2 The secondary winding unit shown is a single unit. The control module 10 is connected to the primary winding L1 and is used to convert the DC power input to the primary winding L1 into AC power. This causes the primary winding to generate a magnetic field, and the secondary winding unit generates an induced electromotive force under the action of this magnetic field, thereby supplying power to the load. Further, the secondary winding unit includes at least one secondary winding 201. Each secondary winding 201 includes a positive winding L21 and a negative winding L22. Each output module 30 includes a positive rectifier filter unit 31 and a negative rectifier filter unit 32. The positive winding L21 is connected to the positive rectifier filter unit 31 to output the positive drive voltage +V11 required by the silicon carbide field-effect transistor, and the negative winding L22 is connected to the negative rectifier filter unit 32 to output the negative drive voltage -V21 required by the silicon carbide field-effect transistor.

[0025] It is understandable that different positive drive voltages can be obtained by setting different turns ratio n1 between the primary winding L1 and the positive winding L21, and different negative drive voltages can be obtained by setting different turns ratio n2 between the primary winding L1 and the negative winding L22. The specific settings can be made according to actual needs.

[0026] In this embodiment of the invention, by setting the turns ratio n1 and utilizing the positive rectifier filter unit 31, a positive drive voltage +V11, such as +18V, can be output. By setting the turns ratio n2 and utilizing the negative rectifier filter unit 32, a negative drive voltage -V21, such as -5V, can be output, thereby providing the required drive voltage for the SiC MOSFET. The turns ratio can be determined according to the actual required voltage. Therefore, by setting two windings, positive and negative, in the secondary winding 201 to output the positive and negative drive voltages respectively, this invention eliminates the need for voltage division by capacitors. This avoids the problems of unstable negative voltage and slow charging speed of negative capacitors caused by capacitor interference, ensuring that the SiC MOSFET operates stably at high frequencies.

[0027] Furthermore, such as Figure 2 As shown, the secondary winding 201 is a winding with a center tap. The secondary winding 201 is divided into a positive winding L21 and a negative winding L22 with the center tap as the dividing point. The center tap is connected to the reference ground. In some embodiments, the positive winding L21 and the negative winding L22 can also be two independent windings, both of which include an output terminal and a ground terminal. The ground terminal of the positive winding L21 and the ground terminal of the negative winding L22 are connected to each other and connected to the reference ground.

[0028] See Figure 3 In one embodiment of the present invention, the secondary winding unit of transformer T1 may include three secondary windings, namely secondary winding 201, secondary winding 202 and secondary winding 203. Correspondingly, there are also three output modules, each output module, such as output module 30, being connected to one secondary winding 201.

[0029] The control module 10 includes a control chip IC1, capacitors C1, C2, and C3, resistors R1, R2, R3, and R4, diode D1, and Zener diode D2; the primary winding L1 includes a first input terminal and a second input terminal.

[0030] The EN and VIN pins of control chip IC1, the positive terminal of capacitor C1, the positive terminal of Zener diode D2, and the first input terminal of primary winding L1 are all connected to the positive terminal IN+ of DC power. The GND pin of control chip IC1, the negative terminal of capacitor C1, and the negative terminal IN- of DC power are all grounded. The VCC pin of control chip IC1 is grounded through capacitor C2. The SW pin of control chip IC1 is connected to the positive terminal IN+ of DC power through resistor R1 and capacitor C3 in sequence. The second input terminal of primary winding L1 is connected to the SW pin, and the second input terminal is also connected to the RFB pin of control chip IC1 through resistor R2. The negative terminal of Zener diode D2 is connected to the negative terminal of diode D1, and the positive terminal of diode D1 is connected to the second input terminal. The REF pin of control chip IC1 is grounded through resistor R4, and is connected to the TC pin of control chip IC1 through resistor R3.

[0031] The control chip IC1 can be either a CSV7136 chip or a CS3832 chip. IC1 integrates a field-effect transistor (FET), which controls the switching on and off of the FET to convert the direct current (DC) applied to the primary winding L1 into alternating current (AC), providing the energy source for the secondary winding.

[0032] Each output module's positive rectification and filtering unit includes a positive rectifier diode, a positive filter capacitor, and a positive Zener diode. The anode of the positive rectifier diode is connected to the output terminal of the positive winding, and the cathode of the positive rectifier diode is connected to the anode of the positive filter capacitor and the cathode of the positive Zener diode, and is used to output a positive drive voltage. The cathodes of the positive filter capacitor and the positive Zener diode are both connected to reference ground. The negative rectification and filtering unit includes a negative rectifier diode, a negative filter capacitor, and a negative Zener diode. The cathode of the negative rectifier diode is connected to the output terminal of the negative winding, and the anode of the negative rectifier diode is connected to the cathode of the negative filter capacitor and the anode of the negative Zener diode, and is used to output a negative drive voltage. The cathodes of the negative filter capacitor and the negative Zener diode are both connected to reference ground.

[0033] like Figure 3As shown, taking output module 30 as an example, in output module 30, the positive rectification and filtering unit includes a positive rectifier diode D3, a positive filter capacitor C4, and a positive Zener diode D5. The positive terminal of the positive rectifier diode D3 is connected to the output terminal of the positive winding L21, and the negative terminal of the positive rectifier diode D3 is connected to the positive terminal of the positive filter capacitor C4 and the negative terminal of the positive Zener diode D5 and is used to output a positive drive voltage of +18V-A. The negative terminals of the positive filter capacitor C4 and the positive terminal of the positive Zener diode D5 are both connected to the reference ground SGNG-A. The negative rectification and filtering unit includes a negative rectifier diode D4, a negative filter capacitor C5, and a negative Zener diode D6. The negative terminal of the negative rectifier diode D4 is connected to the output terminal of the negative winding L22, and the positive terminal of the negative rectifier diode D4 is connected to the negative terminal of the negative filter capacitor C5 and the positive terminal of the negative Zener diode D6 and is used to output a negative drive voltage of -5V-A. The positive terminals of the negative filter capacitor C5 and the negative terminal of the negative Zener diode D6 are both connected to the reference ground SGNG-A. For details on the structure and connection relationships of other output modules, please refer to the appendix. Figure 3 I will not go into detail here.

[0034] The AC output from the positive winding L21 is rectified into positive DC by the positive rectifier diode D3. This positive DC is then filtered by the positive filter capacitor C4, and finally, the positive Zener diode D5 eliminates the floating voltage caused by leakage inductance, resulting in a stable positive drive voltage. Similarly, the AC output from the negative winding L22 is rectified into negative DC by the negative rectifier diode D4. This negative DC is then filtered by the positive filter capacitor C5, and finally, the positive Zener diode D6 eliminates the floating voltage caused by leakage inductance, resulting in a stable negative drive voltage.

[0035] Therefore, through the above embodiments, three sets of positive drive voltages and negative drive voltages can be output.

[0036] In other embodiments of the present invention, there may be multiple transformers, with their primary windings connected in series. The first input terminal of the primary winding of the first transformer is connected to the positive terminal of the direct current, and the second input terminal of the primary winding of the last transformer is connected to the SW pin of the control chip IC1. More specifically, as... Figure 4 As shown, there are, for example, two transformers, namely transformer T1 and transformer T2. The first input terminal of the primary winding L1 of transformer T1 is connected to the positive terminal IN+ of DC power. The second input terminal of the primary winding L1 is connected to the first input terminal of the primary winding L3 of transformer T2. The second input terminal of the primary winding L3 of transformer T2 is connected to the SW pin of control chip IC1.

[0037] Each transformer's secondary winding unit includes three secondary windings. The number of output modules is the same as the number of secondary windings. Each secondary winding outputs a positive drive voltage and a negative drive voltage through one output module. The structure of the output module in transformer T2 is the same as that in transformer T1, and will not be described in detail here; please refer to the implementation of transformer T1.

[0038] The present invention provides a power supply device for driving silicon carbide field-effect transistors. By setting two windings, positive and negative, in the secondary winding to output positive and negative driving voltages respectively, the device eliminates the need for voltage division by capacitors. This avoids the problems of unstable negative voltage and slow charging speed of negative voltage capacitors caused by capacitor influence, and ensures that the SiC MOSFET operates stably at high frequencies.

[0039] This document uses specific examples to illustrate the principles and implementation methods of the present invention. The descriptions of the above embodiments are only for the purpose of helping to understand the method and core ideas of the present invention. At the same time, for those skilled in the art, there will be changes in the specific implementation methods and application scope based on the ideas of the present invention. Therefore, the content of this specification should not be construed as a limitation of the present invention.

Claims

1. A power supply device for driving silicon carbide field-effect transistors, characterized in that, Includes a control module, at least one transformer, and at least one output module; The transformer includes a primary winding and a secondary winding unit. The control module is connected to the primary winding and is used to convert the DC power input to the primary winding into AC power. The secondary winding unit includes at least one secondary winding, and each secondary winding includes a positive winding and a negative winding. Each output module includes a positive rectifier and a negative rectifier and a filter unit. The positive winding is connected to the positive rectifier and filter unit to output the positive drive voltage required by the silicon carbide field-effect transistor, and the negative winding is connected to the negative rectifier and filter unit to output the negative drive voltage required by the silicon carbide field-effect transistor.

2. The power supply device according to claim 1, characterized in that, Both the positive winding and the negative winding include an output terminal and a ground terminal. The positive winding and the negative winding are independent of each other, and the ground terminal of the positive winding and the ground terminal of the negative winding are connected to a reference ground.

3. The power supply device according to claim 1, characterized in that, The secondary winding is a winding with a center tap, and the secondary winding is divided into a positive winding and a negative winding with the center tap as the dividing point.

4. The power supply device according to claim 1, characterized in that, The control module includes a control chip IC1, capacitors C1, C2, and C3, resistors R1, R2, R3, and R4, diode D1, and Zener diode D2; the primary winding includes a first input terminal and a second input terminal. The EN and VIN pins of the control chip IC1, the positive terminal of capacitor C1, the positive terminal of Zener diode D2, and the first input terminal of the primary winding are all connected to the positive terminal of DC power. The GND pin of the control chip IC1, the negative terminal of capacitor C1, and the negative terminal of DC power are all grounded. The VCC pin of the control chip IC1 is grounded through capacitor C2. The SW pin of the control chip IC1 is connected to the positive terminal of DC power through resistor R1 and capacitor C3 in sequence. The second input terminal of the primary winding is connected to the SW pin, and the second input terminal is also connected to the RFB pin of the control chip IC1 through resistor R2. The negative terminal of Zener diode D2 is connected to the negative terminal of diode D1, and the positive terminal of diode D1 is connected to the second input terminal. The REF pin of the control chip IC1 is grounded through resistor R4 and connected to the TC pin of the control chip IC1 through resistor R3.

5. The power supply device according to claim 4, characterized in that, The transformers are multiple, and their primary windings are connected in series. The first input terminal of the primary winding of the first transformer is connected to the positive terminal of DC power, and the second input terminal of the primary winding of the last transformer is connected to the SW pin of the control chip IC1.

6. The power supply device according to claim 5, characterized in that, The number of transformers is two. The first and second input terminals of the primary winding of one transformer are respectively connected to the positive terminal of DC power and the first input terminal of the primary winding of the other transformer. The second input terminal of the primary winding of the other transformer is connected to the SW pin of the control chip IC1. Each of the transformer's secondary winding units includes three secondary windings, and the number of output modules is the same as the number of secondary windings. Each secondary winding outputs a positive drive voltage and a negative drive voltage through an output module.

7. The power supply device according to claim 1, characterized in that, Both the positive winding and the negative winding include an output terminal and a ground terminal; the positive rectifier and filter unit includes a positive rectifier diode, a positive filter capacitor, and a positive Zener diode. The anode of the positive rectifier diode is connected to the output terminal of the positive winding, and the cathode of the positive rectifier diode is connected to the anode of the positive filter capacitor and the cathode of the positive Zener diode and is used to output a positive drive voltage. The cathode of the positive filter capacitor and the anode of the positive Zener diode are both connected to a reference ground. The negative rectifier filter unit includes a negative rectifier diode, a negative filter capacitor, and a negative Zener diode. The negative terminal of the negative rectifier diode is connected to the output terminal of the negative winding. The positive terminal of the negative rectifier diode is connected to the negative terminal of the negative filter capacitor and the positive terminal of the negative Zener diode and is used to output a negative drive voltage. The positive terminals of the negative filter capacitor and the negative terminals of the negative Zener diode are both connected to the reference ground.

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