A multi-mode resonant based single pole single throw switch

Abstract

The application provides a single-pole single-throw switch based on multi-mode resonance, and a transmission pole and a transmission zero point are generated through a multi-mode resonance unit. When the switch is turned on, a first loading capacitor, a first series diode and a second loading inductor generate series resonance, thereby generating a transmission pole. Through parallel resonance of the first loading capacitor, the first series diode and the second loading inductor, an additional transmission zero point is generated in the band. When the switch is turned on, a second transmission pole is generated through a low-pass circuit formed by the multi-mode resonance unit and a second parallel diode. The bandwidth is expanded, and the isolation of the switch is increased. The effect of multi-mode resonance is realized through multiplexing of the first loading capacitor, the first loading capacitor participates in series resonance in the on state and participates in parallel resonance in the off state, and the first loading capacitor participates in direct current bias as a direct current blocking capacitor. The application realizes excellent performance of the switch in terms of insertion loss, isolation and bandwidth, and ensures miniaturization.

Description

TECHNICAL FIELD

[0001] The present application relates to the field of radio frequency integrated circuit design, and particularly to a single-pole single-throw switch based on multi-mode resonance. BACKGROUND

[0002] In the field of millimeter wave technology, the design of traditional millimeter wave switches is mostly based on single-stage transistor series / parallel architecture or two-stage series-parallel transistor architecture. Specifically, the single-stage series architecture has the advantage of a wider working frequency band, but its high-frequency insertion loss is significant, and the isolation performance is weak. The single-stage parallel architecture has a narrower working frequency band, and although it can achieve smaller high-frequency insertion loss, it has higher isolation. The two-stage series-parallel architecture attempts to combine the advantages of single-stage series and single-stage parallel architectures, and compensates for the performance shortcomings of a single architecture through structural optimization. However, in practical applications, it is still difficult to simultaneously achieve low insertion loss and high isolation.

[0003] A DC-20GHz absorption type single-pole single-throw switch with the feature of including a series transistor, two parallel transistors, a series transistor, two parallel transistors, a 7-stage switch transistor structure of the series transistor, is disclosed in Chinese Patent No. 201720859921.2. The structure of multiple transistors is used to achieve high isolation and large bandwidth, and the performance is not optimized by resonance to generate zero and pole points. The overall insertion loss is more than 1dB, and the switch size is also large.

[0004] A millimeter wave single-pole single-throw switch is disclosed in Chinese Patent No. 202310820107.X, which features three switch modules, each module including a transistor and a resistor. Essentially, it is still a series-parallel transistor structure, and does not use multi-mode resonance, so it cannot simultaneously achieve low insertion loss and high isolation, and the passband isolation can only reach more than -10dB.

[0005] A millimeter wave single-pole single-throw switch is disclosed in Chinese Patent No. 202210401214.4, which features a parallel reflection structure of two parallel transistors, a series resonance structure of a transistor and a parallel inductor, and a series-parallel absorption structure of two transistors. Although a resonance is used to generate a transmission zero point in the off state to increase the isolation, the on state does not generate a transmission pole point through resonance, so the performance of insertion loss and bandwidth is general, and the overall insertion loss is greater than 1.2dB.

[0006] In summary, the disclosed single-pole single-throw switch needs to be improved in the following aspects: 1) the performance is improved only by single-series resonance or parallel resonance, without using a resonance structure to simultaneously generate series resonance and parallel resonance to optimize the performance; 2) the general structure has weak ability to realize zero-pole points, without using element multiplexing to realize multi-mode resonance function; 3) the structure using multiple transistor cascades only considers isolation, but the insertion loss is poor, generally higher than 1.2 dB, and the size is large. SUMMARY

[0007] To solve the problems in the background art, the present application provides a single-pole single-throw switch based on multi-mode resonance, which realizes multi-mode resonance through multiplexing of a first loading capacitor, generates zero-pole points in the on and off states to realize excellent performance of the switch in insertion loss, isolation and bandwidth, and ensures miniaturization of the size. The technical solutions provided by the present application are as follows:

[0008] A single-pole single-throw switch based on multi-mode resonance, a first radio frequency port, an input matching circuit, a multi-mode resonance unit with direct current ground, an output matching circuit, and a second radio frequency port are connected in series, and a direct current control unit is connected in parallel at the connection between the multi-mode resonance unit with direct current ground and the output matching circuit.

[0009] The multi-mode resonance unit with direct current ground is composed of a first loading inductor and a parallel unit with direct current ground connected in series.

[0010] The parallel unit with direct current ground includes a first loading capacitor, a first series diode, a second loading inductor, a third shielding inductor, an input end A and an output end B; one end of the first loading capacitor is connected to the input end A, and the other end is connected to one end of the first series diode; the other end of the first series diode is connected to the output end B; one end of the second loading inductor is connected to the input end A, and the other end is connected to the output end B; one end of the third shielding inductor is connected at the connection between the first loading capacitor and the first series diode, and the other end is grounded.

[0011] The direct current control unit includes a fourth shielding inductor and a second blocking capacitor; one end of the fourth shielding inductor is connected at the connection between the multi-mode resonance unit with direct current ground and the output matching circuit, and the other end is connected to the second blocking capacitor; the other end of the second blocking capacitor is grounded; an input signal V1 is applied at the end connected between the fourth shielding inductor and the second blocking capacitor.

[0012] When a logic level is applied, the switch is in the on state, the first loading capacitor, the first series diode and the first loading inductor generate series resonance to generate a transmission pole; when the opposite logic level is applied, the switch is in the off state, the first loading capacitor, the first series diode and the second loading inductor generate parallel resonance to generate a transmission zero point, thereby optimizing the isolation performance of the switch.

[0013] Preferably, a second parallel diode is connected at the connection of the multi-mode resonant unit with DC and the output matching circuit, and the other end of the second parallel diode is grounded.

[0014] Preferably, the input matching circuit and the output matching circuit are pure inductance, pure capacitance or matching circuits composed of capacitance and inductance.

[0015] Preferably, the inductance in the input matching circuit and the output matching circuit is microstrip line inductance or stripline inductance or spiral inductance.

[0016] Preferably, the capacitance in the input matching circuit and the output matching circuit is microstrip line capacitance or metal-insulator-metal capacitance or metal-oxide-metal capacitance or plate capacitance or interdigital capacitance.

[0017] Preferably, the input signal V1 is a positive and negative level signal.

[0018] Preferably, the grounding of the diode and the grounding of one end of the capacitance and the inductance are realized by end-coupling metalized grounding holes.

[0019] A high-order single-pole single-throw switch based on multi-mode resonance includes n single-pole single-throw switches and n-1 coupled inductors, wherein n is an integer and n≥2, and the coupled inductors are connected in series between two single-pole single-throw switches.

[0020] Compared with the prior art, the present application has the beneficial effects that: a transmission pole and a transmission zero point are generated by the multi-mode resonant unit. When the switch is turned on, the first loading capacitance, the first series diode and the first loading inductance generate series resonance, generating a transmission pole. Through parallel resonance of the first loading capacitance, the first series diode and the second loading inductance, an additional transmission zero point is generated in the passband.

[0021] When the switch is turned on, a second transmission pole is generated by the multi-mode resonant unit and the second parallel diode forming a low-pass circuit. The bandwidth is expanded, and the isolation of the switch is also increased. The effect of multi-mode resonance is achieved by multiplexing the first loading capacitance, which participates in series resonance in the on state and parallel resonance in the off state, and also participates in DC bias as a DC blocking capacitor. BRIEF DESCRIPTION OF DRAWINGS

[0022] The accompanying drawings are included to provide a further understanding of the present application, and constitute a part of the specification, illustrate the present application and are used to explain the present application, and do not constitute a limitation on the present application. In the drawings:

[0023] Figure 1 is a general form structure schematic diagram of the single-pole single-throw switch proposed by the present application;

[0024] Figure 2is a first structure schematic diagram of embodiment 1 of the present application;

[0025] Figure 3 is a second structure schematic diagram of embodiment 1 of the present application;

[0026] Figure 4 is a simulation curve diagram of the scattering parameter and the frequency in the on state of embodiment 1 of the present application;

[0027] Figure 5 is a simulation curve diagram of the scattering parameter and the frequency in the off state of embodiment 1 of the present application;

[0028] Figure 6 is a structure schematic diagram of embodiment 2 of the present application;

[0029] Figure 7 is a simulation curve diagram of the scattering parameter and the frequency in the on state of embodiment 2 of the present application;

[0030] Figure 8 is a simulation curve diagram of the scattering parameter and the frequency in the off state of embodiment 2 of the present application;

[0031] Figure 9 is a structure schematic diagram of embodiment 3 of the present application; DETAILED DESCRIPTION

[0032] The technical solutions in the embodiments of the present application will be described clearly and completely below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative labor fall within the scope of protection of the present application.

[0033] In order to make the above-mentioned purposes, features and effects of the present application more obvious and easy to understand, the present application will be further described in detail below with reference to the drawings and specific embodiments.

[0034] Embodiment 1: A single-pole single-throw switch based on multi-mode resonance, which has a general form circuit as shown in Figure 1 The first radio frequency port P1, the input matching circuit X in , the multi-mode resonance unit 1 with DC ground, the output matching circuit X out , and the second radio frequency port P2 are connected in series, and the DC control unit 3 is connected in parallel at the connection between the multi-mode resonance unit 1 with DC ground and the output matching circuit X out .

[0035] The multi-mode resonance unit with DC ground is composed of the first loading inductor L1 and the parallel unit 2 with DC ground in series, wherein the first loading inductor L1 can be located in the input matching circuit X inone end (as shown in Figure 2 the output matching circuit X out one end (as shown in Figure 3 ); the DC-grounded parallel unit 2 comprises a first loading capacitor C1, a first series diode D1, a second loading inductor L2, a third blocking inductor L3, an input end A and an output end B; one end of the first loading capacitor C1 is connected to the input end A, and the other end is connected to one end of the first series diode D1; the other end of the first series diode D1 is connected to the output end B; one end of the second loading inductor L2 is connected to the input end A, and the other end is connected to the output end B; one end of the third blocking inductor L3 is connected at the connection between the first loading capacitor C1 and the first series diode D1, and the other end is grounded.

[0036] The DC control unit 3 comprises a fourth blocking inductor L4 and a second blocking capacitor C2; one end of the fourth blocking inductor L4 is connected at the connection between the DC-grounded multi-mode resonant unit 1 and the output matching circuit X out , and the other end is connected to the second blocking capacitor C2; the other end of the second blocking capacitor C2 is grounded; an input signal V1 is applied between the fourth blocking inductor L4 and the second blocking capacitor C2; the input signal V1 is a positive and negative level signal.

[0037] The input matching circuit X in and the output matching circuit X out are matching circuits composed of pure inductors, pure capacitors or capacitors and inductors; the inductors in the input matching circuit X in and the output matching circuit X out are microstrip inductors or stripline inductors or spiral inductors; the capacitors in the input matching circuit X in and the output matching circuit X out are microstrip capacitors or metal-insulator-metal capacitors or metal-oxide-metal capacitors or plate capacitors or interdigital capacitors.

[0038] The grounding of the arbitrary diode and the grounding of one end of the capacitor and the inductor are realized by end-coupling metalized grounding holes.

[0039] The first loading capacitor C1 participates in series resonance in the on state and parallel resonance in the off state, and the first loading capacitor C1 participates in DC bias as a blocking capacitor. When a logic level is applied, the switch is in the on state, the first loading capacitor C1, the first series diode D1 and the first loading inductor L1 produce series resonance to generate a transmission pole; when an opposite logic level is applied, the switch is in the off state, parallel resonance is generated through the first loading capacitor C1, the first series diode D1 and the second loading inductor L2, and a transmission zero point is generated in the passband, thereby optimizing the isolation performance of the switch.

[0040] Figure 4 This is a simulation curve of the relationship between scattering parameters and frequency in the conduction state of Example 1. In the conduction state, one transmission pole is generated in the passband. Figure 5 This is a simulation curve of the relationship between scattering parameters and frequency in the off state of Embodiment 1 of the present invention; in the off state, a transmission zero is generated in the band through multimode resonance.

[0041] Example 2: As Figure 6 As shown, based on Embodiment 1, the multimode resonant unit 1 with DC ground and the output matching circuit X are... out The connection point is connected to a second parallel diode D2, and the other end of the second parallel diode D2 is grounded.

[0042] In the on state, the added second parallel diode D2 forms a low-pass circuit, generating a second transmission pole, thereby increasing isolation and improving bandwidth.

[0043] Figure 7 This is a simulation curve of the relationship between scattering parameters and frequency in the conduction state of Example 2. In the conduction state, two transmission poles are generated in the passband, which optimizes the in-band performance and expands the bandwidth. The insertion loss is less than 1dB and the return loss is greater than 20dB. Figure 8 This is a simulation curve of the relationship between scattering parameters and frequency in the off state of Example 2. In the off state, a transmission zero is generated in the band through multimode resonance, which optimizes the isolation performance of the switch and the overall isolation is greater than 17dB.

[0044] Example 3: Connect n multimode resonant units 1 with DC ground and n-1 coupled inductors in series, and achieve multimode resonance by reusing the first loading capacitor C1 to optimize in-band performance. Figure 9 One example is given (n=2), such as Figure 9 As shown, a high-order single-pole single-throw switch based on multimode resonance includes a first RF port P1 and an input matching circuit X. in The system consists of: a first multimode resonant unit with DC ground, a DC control unit 3, a second parallel diode D2, a fifth coupling inductor L5, a third parallel diode D3, a second multimode resonant unit with DC ground, and an output matching circuit X. out Second radio frequency port P2.

[0045] Compared to Embodiment 2, Embodiment 3 has a multimode resonant unit with DC ground and an output matching circuit X. outThe fifth coupling inductance L5, the third parallel diode D3 and the second DC-grounded multi-mode resonant unit are added between the first and the second. Specifically, one end of the eighth loading inductance L8 is connected with the second radio frequency port P2, and the other end is connected with the third loading capacitor C3. The other end of the third loading capacitor C3 is connected with the first end of the fourth series diode D4 and the seventh loading inductance L7. The other end of the seventh loading inductance L7 is grounded. The other end of the fourth series diode D4 is connected with the sixth loading inductance L6. The other end of the sixth loading inductance L6 is connected with the connection point of the third loading capacitor C3 and the eighth loading inductance L8. One end of the fifth coupling inductance L5 is connected with the connection point of the first series diode D1 and the second loading inductance L2, and the other end is connected with the connection point of the fourth series diode D4 and the sixth loading inductance L6. One end of the third parallel diode D3 is connected with the connection point of the fifth coupling inductance L5 and the fourth series diode D4, and the other end is grounded.

[0046] The above only describes the preferred embodiments of the present application and is not used to limit the present application. Although the present application is described in detail with reference to the foregoing embodiments, those skilled in the art can modify the technical solutions recorded in the foregoing embodiments or replace some technical features equivalently. Any modification, equivalent replacement, improvement, etc. within the spirit and principle of the present application shall be included in the protection scope of the present application.

Claims

1. A multi-mode resonance based single pole single throw switch, characterized by, The first radio frequency port, the input matching circuit, the multi-mode resonant unit with DC ground, the output matching circuit and the second radio frequency port are connected in series, and the DC control unit is connected in parallel at the connection between the multi-mode resonant unit with DC ground and the output matching circuit. The multi-mode resonant unit with DC ground is composed of a first loading inductor and a parallel unit with DC ground in series. The parallel unit with DC ground comprises a first loading capacitor, a first series diode, a second loading inductor, a third shielding inductor, an input end A and an output end B; one end of the first loading capacitor is connected to the input end A, and the other end is connected to one end of the first series diode; the other end of the first series diode is connected to the output end B; one end of the second loading inductor is connected to the input end A, and the other end is connected to the output end B; one end of the third shielding inductor is connected at the connection between the first loading capacitor and the first series diode, and the other end is grounded. The DC control unit comprises a fourth shielding inductor and a second DC blocking capacitor; one end of the fourth shielding inductor is connected at the connection between the multi-mode resonant unit with DC ground and the output matching circuit, and the other end is connected to the second DC blocking capacitor; the other end of the second DC blocking capacitor is grounded; and an input signal V1 is applied at the end connected to the fourth shielding inductor and the second DC blocking capacitor. When a logic level is applied, the switch is in an on state, the first loading capacitor, the first series diode and the first loading inductor produce series resonance, and a transmission pole is generated; when an opposite logic level is applied, the switch is in an off state, the first loading capacitor, the first series diode and the second loading inductor produce parallel resonance, and a transmission zero point is generated, thereby optimizing the isolation performance of the switch.

2. A multi-mode resonant based single pole single throw switch according to claim 1, wherein, A second parallel diode is connected at the connection between the multi-mode resonant unit with DC ground and the output matching circuit, and the other end of the second parallel diode is grounded.

3. A multi-mode resonant based single pole single throw switch as claimed in claim 1, wherein, The input matching circuit and the output matching circuit are matching circuits composed of pure inductors, pure capacitors or capacitors and inductors.

4. A multi-mode resonant based single pole single throw switch as claimed in claim 1, wherein, The inductors in the input matching circuit and the output matching circuit are microstrip line inductors or stripline inductors or spiral inductors.

5. A multi-mode resonant based single pole single throw switch as claimed in claim 1, wherein, The capacitors in the input matching circuit and the output matching circuit are microstrip line capacitors or metal-insulator-metal capacitors or metal-oxide-metal capacitors or plate capacitors or interdigital capacitors.

6. A multi-mode resonant based single pole single throw switch as claimed in claim 1, wherein, The input signal V1 is a positive and negative level signal.

7. A multi-mode resonant based single pole single throw switch as claimed in claim 2, wherein, The grounding of the diode and the grounding of one end of the capacitor and the inductor are realized by end-coupling metalized grounding vias.

8. A high-order multi-mode resonant based single pole single throw switch, characterized in that, The multi-mode resonant based single-pole single-throw switch comprises n multi-mode resonant based single-pole single-throw switches according to any one of claims 1 to 7 and n-1 coupling inductors, wherein n is an integer and n≥2, and the coupling inductors are connected in series between two single-pole single-throw switches.

9. A multi-mode resonance based single pole multi throw switch, characterized by, The multi-mode resonant based single-pole single-throw switch comprises a multi-mode resonant based single-pole single-throw switch according to any one of claims 1 to 7.

10. A radio frequency front-end circuit, characterized by The multi-mode resonant based single-pole single-throw switch comprises a multi-mode resonant based single-pole single-throw switch according to any one of claims 1 to 7.

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