Gas distribution device and processing equipment and method of semiconductor device

Abstract

The invention provides a gas distribution device, processing equipment of a semiconductor device and a processing method of the semiconductor device. The gas distribution device comprises a gas inlet pipeline and a gas distribution cavity. The gas distribution device further comprises a plurality of gas distribution branches which are connected with the gas distribution cavity so as to obtain branch gas of the gas distribution branches. The flow resistance adjusting pieces are arranged in the gas distribution branches so as to be connected with branch gas inlet sections and branch gas outlet sections of the gas distribution branches, each flow resistance adjusting piece comprises an adjusting hole channel, and the gas outlet flow resistance difference of the gas distribution branches is corrected by changing gaps between the adjusting hole channels and the branch gas outlet sections.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor manufacturing, a gas distribution device, a semiconductor device processing equipment, and a semiconductor device processing method. BACKGROUND

[0002] In the field of semiconductor manufacturing, thin film deposition processes such as chemical vapor deposition and atomic layer deposition are core links of chip manufacturing, which rely on the wafer transfer system of semiconductor process equipment to realize the transmission and process execution of wafers between multiple chambers. In order to meet the needs of synchronous deposition in multiple chambers, a single gas distribution component is usually used as the total process gas supply end in the prior art, and a main pipeline is connected to the gas distribution structure to distribute the process gas to each independent station of the equipment, providing a continuous and stable deposition gas source for the wafers in each station. This is the current gas supply architecture for batch production of multi-chamber semiconductor process equipment.

[0003] In actual application, due to the problems such as diameter deviation, uneven roughness of inner wall of each branch pipeline, the processing precision of the gas distribution structure is usually limited, and errors are easily caused in the sealing of branch connection and the consistency of pipeline length during assembly, resulting in significant differences in flow resistance of each gas distribution branch. Therefore, when each station starts radio frequency for thin film deposition, the flow rate and flow distribution of process gas in different flow resistance branches are unbalanced, which directly causes the thickness of deposited film on the surface of wafers in different stations to deviate, and finally leads to poor stability and consistency of chips produced in each station.

[0004] In order to overcome the above-mentioned defects existing in the prior art, there is an urgent need in the field for a gas distribution technology that can improve the uniformity of gas flow output of each gas distribution branch, thereby helping to improve the process effect and enhance the stability and consistency of thin film deposition in each process chamber. SUMMARY

[0005] The following presents a simplified summary of one or more aspects in order to provide a basic understanding of such aspects. This summary is not an extensive overview of all contemplated aspects, and is intended to neither identify key or critical elements of all aspects nor delineate the scope of any or all aspects. Its sole purpose is to present some concepts of one or more aspects in a simplified form as a prelude to the more detailed description that is presented later.

[0006] In order to overcome the above-mentioned defects existing in the prior art, the present application provides a gas distribution device, a semiconductor device processing equipment, and a semiconductor device processing method, which are used to adjust the flow resistance of each branch, thereby uniformly distributing the process gas flow of each gas distribution branch, and enhancing the stability and consistency of thin film deposition in each process chamber.

[0007] Specifically, the gas distribution device according to the first aspect of the present application comprises an air inlet pipeline and a gas distribution cavity. The gas distribution device further comprises a plurality of gas distribution branches connected to the gas distribution cavity to obtain branch gas of each gas distribution branch, and a flow resistance adjusting member arranged in each gas distribution branch to connect a branch air inlet section and a branch air outlet section of the gas distribution branch, wherein the flow resistance adjusting member comprises an adjusting hole, and the outflow resistance difference of each gas distribution branch is corrected by changing the gap between the adjusting hole and the branch air outlet section.

[0008] Further, in some embodiments of the present application, the air inlet of the adjusting hole is located in the air outlet area of the branch air inlet section, and the hole extension line of the adjusting hole intersects with the pipe wall of the branch air outlet section to change the gap between the air outlet of the adjusting hole and the pipe wall of the branch air outlet section during the movement of the flow resistance adjusting member.

[0009] Further, in some embodiments of the present application, the end pipe diameter of the branch air inlet section is less than or equal to the front end pipe diameter of the branch air outlet section, the air outlet of the adjusting hole is located outside the corresponding air inlet, and the hole extension line of the adjusting hole is inclined radially outward to intersect with the pipe wall of the branch air outlet section.

[0010] Further, in some embodiments of the present application, the end pipe diameter of the branch air inlet section is greater than the front end pipe diameter of the branch air outlet section, and the air outlet of the adjusting hole is on the same horizontal line as the corresponding air inlet, so that the hole extension line of the adjusting hole intersects with the pipe wall of the branch air outlet section.

[0011] Further, in some embodiments of the present application, the flow resistance adjusting member further comprises a main flow hole through which a first flow of branch gas is transmitted to the branch air outlet section, and the adjusting hole through which a second flow of branch gas is transmitted to the branch air outlet section, wherein the hole diameter of the main flow hole is greater than the hole diameter of the adjusting hole.

[0012] Further, in some embodiments of the present application, the gas distribution device comprises a compression nut arranged at the connection between the flow resistance adjusting member and the two ends of the branch air inlet section and the branch air outlet section, the compression nut is loosened to provide space for the left and right movement of the flow resistance adjusting member, and the compression nut is tightened to fix the position of the flow resistance adjusting member after the movement adjustment of the flow resistance adjusting member is completed.

[0013] Further, in some embodiments of the present application, a sealing ring is arranged between the compression nut and the flow resistance adjusting member to seal the compression nut and the flow resistance adjusting member, and a metal gasket is arranged between the compression nut and the sealing ring to block the compression nut and the sealing ring.

[0014] Further, the semiconductor device processing apparatus according to the second aspect of the present application comprises: a plurality of process chambers for performing a film deposition process; a gas tank for providing a process gas; and the gas distribution device according to any one of the first aspect of the present application, wherein the gas inlet line of the gas distribution device is connected to the gas tank, the process gas is distributed to a plurality of gas branch lines via the gas distribution chamber, and the flow resistance difference of each gas branch line is adjusted by the flow resistance adjusting member in each gas branch line, so that the gas distribution amount into each process chamber is the same.

[0015] Further, the semiconductor device processing method according to the third aspect of the present application is performed by the semiconductor device processing apparatus according to the second aspect of the present application, and comprises the following steps: providing a process gas to the gas inlet line of the gas distribution device by the gas tank, and distributing the process gas to a plurality of gas branch lines via the gas distribution chamber; adjusting the adjusting hole of each flow resistance adjusting member to a corresponding target gap with the initial gap of the branch outlet section, so as to adjust the flow resistance difference of each gas branch line; and introducing the branch gas with the same gas distribution amount into each process chamber via the branch outlet section of each gas branch line, so as to perform the film deposition process of the plurality of process chambers.

[0016] Further, in some embodiments of the present application, the step of adjusting the adjusting hole of each flow resistance adjusting member to a corresponding target gap with the initial gap of the branch outlet section, so as to adjust the flow resistance difference of each gas branch line, comprises: obtaining the initial flow resistance difference of the output of each gas branch line; obtaining the corresponding relationship between the gap value and the outlet flow resistance in each gas branch line by adjusting the gap between the adjusting hole and the branch outlet section in each gas branch line, wherein the outlet flow resistance is negatively related to the size of the gap value; and obtaining the target gap corresponding to each gas branch line according to the corresponding relationship, so as to compensate for the initial flow resistance difference of each gas branch line. BRIEF DESCRIPTION OF DRAWINGS

[0017] The above features and advantages of the present application will be better understood by reading the detailed description of the embodiments of the present application in conjunction with the following drawings, in which: the components are not necessarily drawn to scale, and components of similar or identical function or features can have the same or similar reference label.

[0018] Figure 1 The structural schematic diagram of the gas distribution device according to some embodiments of the present application is shown.

[0019] Figure 2 The device structural schematic diagram of the flow resistance adjusting member according to some embodiments of the present application is shown.

[0020] Figure 3AA three-dimensional structural diagram of the installation of a flow resistance adjustment component provided according to some embodiments of the present invention is shown.

[0021] Figure 3B A schematic cross-sectional view of the mounting structure of a flow resistance regulating member provided according to some embodiments of the present invention is shown.

[0022] Figure 4 A schematic diagram of the tilt adjustment channel provided according to some embodiments of the present invention is shown.

[0023] Figure 5 A schematic diagram of the structure of a horizontal adjustment channel provided according to some embodiments of the present invention is shown.

[0024] Figure 6 A schematic flowchart of a method for fabricating a semiconductor device according to some embodiments of the present invention is shown.

[0025] Figure label:

[0026] 10. Intake Pipe

[0027] 20 air chambers

[0028] 30 gas branch lines

[0029] 31 Branch intake section

[0030] 32 branch outlet sections

[0031] 40 Flow resistance adjustment component

[0032] 41 Adjustment channel

[0033] 42 Mainstream channels

[0034] 50. Compression nut

[0035] 60 sealing ring

[0036] 70 Metal gasket Detailed Implementation

[0037] The following specific embodiments illustrate the implementation of the present invention. Those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. Although the description of the present invention is presented in conjunction with preferred embodiments, this does not mean that the features of the invention are limited to these embodiments. On the contrary, the purpose of describing the invention in conjunction with embodiments is to cover other options or modifications that may be derived based on the claims of the present invention. To provide a thorough understanding of the invention, many specific details will be included in the following description. The invention may also be implemented without using these details. Furthermore, to avoid confusion or obscuring the focus of the invention, some specific details will be omitted in the description.

[0038] In the description of the present application, it should be noted that unless specifically stated and limited otherwise, the terms "mounting", "connected", "connection" should be understood broadly, for example, can be fixed connection, can also be detachable connection, or integrally connected; can be mechanical connection, can also be electrical connection; can be directly connected, can also be indirectly connected through an intermediate medium, can be the communication inside two elements. For those skilled in the art, the specific meaning of the above terms in the present application can be understood according to the specific circumstances.

[0039] In addition, "upper", "lower", "left", "right", "top", "bottom", "horizontal", "vertical" used in the following description should be understood as the orientation shown in the section and the related drawings. The relative terms are only for the convenience of description, and do not mean that the device described should be manufactured or operated in a particular orientation, so it should not be understood as a limitation on the present application.

[0040] It can be understood that although the terms "first", "second", "third" and the like can be used herein to describe various components, regions, layers and / or parts, these components, regions, layers and / or parts should not be limited by these terms, and these terms are only used to distinguish different components, regions, layers and / or parts. Therefore, the first component, region, layer and / or part discussed below can be referred to as the second component, region, layer and / or part without departing from some embodiments of the present application.

[0041] As described above, in actual application process, due to the problems of pipe diameter deviation, uneven roughness of inner wall of each branch pipeline, etc., the processing precision of the gas distribution structure is usually limited, and the sealing of branch connection and the consistency of pipeline length in the assembly process are prone to errors, resulting in significant differences in flow resistance of each gas distribution branch. Therefore, when each station starts radio frequency for thin film deposition, the flow rate and flow distribution of process gas in different flow resistance branches are unbalanced, which directly causes the thickness deviation of the deposited thin film on the wafer surface of different stations, and finally leads to poor stability and consistency of the output chips of each station.

[0042] In order to overcome the above-mentioned defects existing in the prior art, the present application provides a gas distribution device, a semiconductor device processing equipment and a semiconductor device processing method, which are used to adjust the flow resistance of each branch, thereby uniformly distributing the process gas flow of each gas distribution branch, so as to improve the stability and consistency of thin film deposition in each process chamber.

[0043] In some non-limiting embodiments, the gas distribution device provided by the first aspect of the present application can be configured in the semiconductor device processing equipment provided by the second aspect of the present application, and the above-mentioned semiconductor device processing equipment can be processed by the semiconductor device processing method provided by the third aspect of the present application.

[0044] Please refer to Figure 1 , Figure 1 A structural schematic diagram of a gas distribution device according to some embodiments of the present application is shown. Figure 2 A device structural schematic diagram of a flow resistance adjusting member according to some embodiments of the present application is shown. Figure 3A An installation structural schematic diagram of a flow resistance adjusting member according to some embodiments of the present application is shown. Figure 3B A cross-sectional structural schematic diagram of an installation structural schematic diagram of a flow resistance adjusting member according to some embodiments of the present application is shown.

[0045] As Figure 1-2 , Figure 3A-3B shown, in some embodiments of the present application, the gas distribution device includes a gas inlet pipeline 10, a gas distribution cavity 20, a plurality of gas distribution branches 30, and a flow resistance adjusting member 40. The plurality of gas distribution branches 30 are connected to the gas distribution cavity 20 to obtain branch gas of each gas distribution branch 30. The flow resistance adjusting member 40 is arranged in each gas distribution branch 30 to connect a branch gas inlet section 31 and a branch gas outlet section 32 of the gas distribution branch 30. The flow resistance adjusting member 40 includes an adjusting hole 41, and by changing the gap between the adjusting hole 41 and the branch gas outlet section 32, the outflow resistance difference of each gas distribution branch 30 is corrected. In this embodiment, by changing the gap between the adjusting hole 41 of the flow resistance adjusting member 40 and the branch gas outlet section 32 in each gas distribution branch 30, the outflow resistance difference of each branch due to machining and assembly errors can be accurately corrected, thereby uniformly distributing the process gas flow of each gas distribution branch 30 to improve the stability and consistency of thin film deposition in each process chamber.

[0046] In addition, in the above-mentioned embodiments, the flow resistance adjusting member 40 can be adjusted in situ under high temperature conditions, avoiding the cooling and re-heating process of the heating disc caused by disassembly and replacement of parts, thereby improving the efficiency of the adjustment.

[0047] Next, as Figure 2-3B shown, in some embodiments, for the branches with excessively large spacing and low flow resistance, the spacing can be reduced to increase the local resistance, and / or for the branches with excessively small spacing and high flow resistance, the spacing can be increased to reduce the local resistance. Further, for the branches with larger errors, the resistance can be accurately set by adjusting the gap after eliminating the gap, and finally the total flow resistance of each branch tends to be consistent, achieving uniform gas distribution.

[0048] As Figure 3B shown, in some optional embodiments, the gas inlet of the adjusting hole 41 is located in the gas outlet area of the branch gas inlet section 31, and the hole extension line of the adjusting hole 41 intersects with the pipe wall of the branch gas outlet section 32, so as to change the gap between the gas outlet of the adjusting hole 41 and the pipe wall of the branch gas outlet section 32 in the process of moving the flow resistance adjusting member 40.

[0049] Reference is made to Figure 4-5 , Figure 4 A structural diagram of the inclination adjustment hole is shown according to some embodiments of the present application. Figure 5 A structural diagram of the horizontal adjustment hole is shown according to some embodiments of the present application.

[0050] As Figure 4 shown, in some optional embodiments, the end pipe diameter of the branch inlet section 31 can be less than or equal to the front pipe diameter of the branch outlet section 32, the outlet of the adjustment hole 41 is located outside the corresponding inlet, so as to incline the hole extension line of the adjustment hole 41 radially outward, so as to intersect with the pipe wall of the branch outlet section 32. In this embodiment, a common specification pipe can be selected as the branch inlet section 31, so as to save cost.

[0051] In other alternative embodiments, as Figure 5 shown, the end of the branch inlet section 31 can be improved. The end pipe diameter of the end of the branch inlet section 31 can be greater than the front pipe diameter of the branch outlet section 32, the outlet of the adjustment hole 41 is located on the same horizontal line with the corresponding inlet, so as to make the hole extension line of the adjustment hole 41 intersect with the pipe wall of the branch outlet section 32. Here, the end pipe diameter of the end can be set as horizontal, radially outward or radially inward.

[0052] Those skilled in the art can understand that the specific structure of the branch inlet section 31 is only some non-limiting embodiments provided by the present application, which aims to clearly show the main concept of the present application and provide some specific schemes for the public to implement, but not to limit the overall function or working mode of the gas distribution device.

[0053] In addition, the flow resistance adjustment member 40 further comprises a main flow hole 42, via which the first flow of branch gas is transmitted to the branch outlet section 32, and via the adjustment hole 41, the second flow of branch gas is transmitted to the branch outlet section 32, wherein the hole diameter of the main flow hole 42 can be greater than the hole diameter of the adjustment hole 41.

[0054] Here, the main flow hole 42 can stably transmit a large flow of gas, and through the cooperation of the main flow hole 42 and the adjustment hole 41, the accuracy and stability of the flow resistance adjustment can be improved as a whole.

[0055] Specifically, the large flow rate gas flow can be stably transmitted via the main flow channel 42, so as to ensure that the core flow resistance characteristics of each branch are consistent, and avoid flow field fluctuations caused by small flow rate adjustment, such as pressure pulsation, flow rate sudden change, and interference with the basic flow resistance dominated by the large flow rate. Further, the small flow rate gas flow can be transmitted via the adjustment channel 41 as a flow resistance adjustment carrier, and the adjustable flow resistance characteristics of the small flow rate gas flow can improve the accuracy and stability of the overall flow resistance adjustment for each branch due to processing errors.

[0056] Please continue to refer to Figure 3B The gas distribution device includes a compression nut 50 arranged at the connection between the flow resistance adjustment member 40 and the branch inlet section 31 and the branch outlet section 32, respectively. The compression nut 50 is loosened to provide space for the left and right movement of the flow resistance adjustment member 40, and the compression nut 50 is tightened to fix the position of the flow resistance adjustment member 40 after the movement adjustment of the flow resistance adjustment member 40 is completed.

[0057] Further, a sealing ring 60 is arranged between the compression nut 50 and the flow resistance adjustment member 40 to seal the compression nut 50 and the flow resistance adjustment member 40, and a metal gasket 70 is arranged between the compression nut 50 and the sealing ring 60 to block the compression nut 50 and the sealing ring 60.

[0058] In addition, the second aspect of the present application provides a semiconductor device processing equipment, which includes a plurality of process cavities, a gas tank and the gas distribution device provided by the first aspect of the present application. The plurality of process cavities are used for carrying out film coating processes. The gas tank is used for providing process gas. The inlet pipeline 10 of the gas distribution device is connected to the gas tank, and the process gas is distributed to a plurality of branch gas distribution channels 30 via the gas distribution cavity 20, and the flow resistance adjustment members 40 in the branch gas distribution channels 30 are used to correct the outlet flow resistance difference of the branch gas distribution channels 30, so that the gas distribution amount into each process cavity is the same.

[0059] The working principle of the semiconductor device processing equipment will be described below in combination with some embodiments of the semiconductor device processing method. Those skilled in the art can understand that the embodiments of the semiconductor device processing method are only some non-limiting embodiments provided by the present application, which are intended to clearly show the main concept of the present application and provide some specific schemes for facilitating the public to implement, but not for limiting the whole function or the whole working mode of the semiconductor device processing equipment. Similarly, the semiconductor device processing equipment is also only some non-limiting embodiments provided by the present application, which does not limit the execution subject or the execution order of each step in the semiconductor device processing method.

[0060] Please refer to Figure 6 , Figure 6 A flowchart of a semiconductor device processing method according to some embodiments of the present application is shown.

[0061] AsFigure 6 As shown, the method for processing the semiconductor device can first perform step S1: providing the process gas to the gas inlet pipeline 10 of the gas distribution device through the gas tank, and distributing the process gas to the plurality of gas distribution branches 30 through the gas distribution cavity 20.

[0062] Subsequently, the method can perform step S2: adjusting the gap between the adjustment channel 41 of each flow resistance adjustment member 40 and the initial gap of the branch outlet section 32 to the corresponding target gap, so as to correct the initial outflow resistance difference of each gas distribution branch 30.

[0063] Specifically, the initial outflow resistance difference of each gas distribution branch 30 is obtained. Then, by adjusting the gap between the adjustment channel 41 and the branch outlet section 32 in each gas distribution branch 30, the corresponding relationship between the gap value and the outflow resistance of each gas distribution branch 30 is obtained, wherein the outflow resistance is negatively correlated with the size of the gap value. Finally, according to the corresponding relationship, the target gap corresponding to each gas distribution branch 30 is obtained to compensate for the initial outflow resistance difference of each gas distribution branch 30.

[0064] Finally, the method can perform step S3: introducing the branch gas with the same amount of gas into each process cavity through the branch outlet section 32 of each gas distribution branch 30, so as to perform the film deposition process of the plurality of process cavities.

[0065] In summary, the gas distribution device, the processing equipment for semiconductor devices, and the processing method for semiconductor devices provided by the present application can accurately correct the outflow resistance difference of each branch caused by processing and assembly errors by changing the gap between the adjustment channel of the flow resistance adjustment member and the branch outlet section in each gas distribution branch, thereby uniformly distributing the process gas flow of each gas distribution branch, so as to improve the stability and consistency of film deposition in each process chamber.

[0066] Although the above-described methods are illustrated and described as a series of acts for simplicity, it is to be understood and appreciated that the methods are not limited by the order of acts, as some acts may, in accordance with one or more embodiments, occur in different orders and / or concurrently with other acts from that shown and described herein. And / or, certain acts can be omitted.

[0067] The previous description of the disclosure has been provided so that any person skilled in the art can make or use the disclosure. Various modifications to the disclosure will be apparent to those skilled in the art, and the general principles defined herein can be applied to other variations without departing from the spirit or scope of the disclosure. Thus, the disclosure is not intended to be limited to the examples and designs described herein, but is to be given the broadest scope consistent with the principles and novel features disclosed herein.

Claims

1. A gas distribution device, comprising an intake pipe and a gas distribution chamber, characterized in that, The gas distribution device further includes: Multiple gas distribution branches are connected to the gas distribution chamber to obtain the branch gas of each gas distribution branch; and A flow resistance regulating component is disposed in each of the gas distribution branches to connect the branch inlet section and the branch outlet section of the gas distribution branch. The flow resistance regulating component includes an regulating channel, and by changing the gap between the regulating channel and the branch outlet section, the difference in outlet flow resistance of each gas distribution branch is corrected.

2. The gas separator as described in claim 1, characterized in that, The air inlet of the regulating channel is located in the air outlet area of ​​the branch air inlet section, and the extension line of the regulating channel intersects the pipe wall of the branch air outlet section, so as to change the gap between the air outlet of the regulating channel and the pipe wall of the branch air outlet section during the movement of the flow resistance regulating member.

3. The gas separator as described in claim 2, characterized in that, The end diameter of the branch air inlet section is less than or equal to the front diameter of the branch air outlet section. The outlet of the regulating channel is located outside its corresponding air inlet, and the extension line of the regulating channel is inclined radially outward so that it intersects with the pipe wall of the branch air outlet section.

4. The gas separator as described in claim 2, characterized in that, The end diameter of the branch air inlet section is larger than the front diameter of the branch air outlet section, and the air outlet of the regulating channel is at the same horizontal line as its corresponding air inlet, so that the extension line of the regulating channel intersects the pipe wall of the branch air outlet section.

5. The gas separator as described in claim 1, characterized in that, The flow resistance regulating component further includes a main flow channel through which branch gas of a first flow rate is transmitted to the branch outlet section, and a regulating channel through which branch gas of a second flow rate is transmitted to the branch outlet section, wherein the diameter of the main flow channel is larger than the diameter of the regulating channel.

6. The gas separator as described in claim 2, characterized in that, The gas distribution device includes a clamping nut, which is respectively located at the connection points of the flow resistance adjusting member with the branch inlet section and the branch outlet section. The clamping nut is loosened to provide space for the left and right movement of the flow resistance adjusting member, and after the flow resistance adjusting member has completed the movement adjustment, the clamping nut is tightened to fix the position of the flow resistance adjusting member.

7. The gas separator as described in claim 6, characterized in that, A sealing ring is provided between the clamping nut and the flow resistance adjusting component to seal the clamping nut and the flow resistance adjusting component, and a metal gasket is provided between the clamping nut and the sealing ring to block the clamping nut and the sealing ring.

8. A semiconductor device processing apparatus, characterized in that, include: Multiple process chambers are used for coating processes; Gas boxes are used to supply process gases; as well as The gas distribution device according to any one of claims 1 to 7, wherein the gas inlet pipe of the gas distribution device is connected to the gas box, and the process gas is distributed to multiple gas distribution branches via the gas distribution chamber, and the flow resistance difference of each gas distribution branch is corrected by the flow resistance adjustment element in each gas distribution branch so that the amount of gas entering each process chamber is the same.

9. A method for fabricating a semiconductor device, characterized in that, The processing method, implemented via the semiconductor device processing equipment as described in claim 8, includes the following steps: Process gas is supplied to the intake pipe of the gas distribution device through the gas box, and the process gas is distributed to multiple gas distribution branches through the gas distribution chamber. The initial gap between the adjustment channel of each flow resistance adjustment component and the outlet section of the branch is adjusted to the corresponding target gap to correct the difference in outlet flow resistance of each branch; and Through the branch outlet sections of each gas distribution branch, branch gas with the same distribution volume is introduced into each process chamber to carry out the coating process in multiple process chambers.

10. The processing method as described in claim 9, characterized in that, The step of adjusting the initial gap between the adjustment channel of each flow resistance adjusting component and the outlet section of the branch to the corresponding target gap, so as to correct the difference in outlet flow resistance of each branch, includes: Obtain the initial outlet airflow resistance difference of each of the gas branch lines; By adjusting the gap between the adjusting channel and the outlet section of each gas branch, the relationship between the gap value and the outlet air resistance in each gas branch is obtained, wherein the outlet air resistance is negatively correlated with the gap value; and Based on the correspondence, the target gap corresponding to each gas branch is obtained to compensate for the initial outflow resistance difference of each gas branch.

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