Angle detection device and detection method

Abstract

According to the angle detection device and method, based on a built-in processing program of a processing chip and the magnetic field characteristics of an anisotropic magnetoresistor, after voltage signals of a Hall element and the anisotropic magnetoresistor are received, the offset of the angle can be accurately calculated through the device and method, and compared with an existing solution, the angle detection device and method have the advantages that the detection accuracy is high, and the detection cost is low. According to the device and the method provided by the invention, through specific structural design and circuit arrangement, on the premise of maintaining the cost advantage, the complexity and maintenance requirements and the manufacturing cost are lower, and the high angle resolution is realized while the miniaturization and integration requirements are realized.

Description

Technical Field

[0001] This invention relates to the field of angle detection technology, specifically to an angle detection device and detection method. Background Technology

[0002] As a core component in industrial automation, automotive electronics, robotics, and other fields, magnetoelectric angle sensors have made significant progress in material innovation, technology integration, and application scenario expansion in recent years. However, they also face challenges in accuracy and environmental adaptability. Summary of the Invention

[0003] To address these issues, this invention proposes an angle detection device and detection method.

[0004] According to one aspect of the present invention, an angle detection device is provided, comprising a first relative rotating body and a second relative rotating body. The first relative rotating body is provided with a magnet, which rotates relative to the second relative rotating body. The second relative rotating body is provided with a first Hall element, a first to third anisotropic magnetoresistive resistors (AMRs), three second resistors, and three third resistors. The first to third AMRs are respectively located at the trisection points of the same virtual circle, with one end grounded and the other end connected to one end of one of the second resistors and one end of each of the three third resistors. The other ends of the three second resistors are connected to an input voltage. The line connecting the center of the virtual circle and the location of the first AMR is perpendicular to the line connecting the center of the virtual circle and the location of the first Hall element and intersects the center of the virtual circle.

[0005] According to one aspect of the present invention, an angle detection method is proposed, utilizing the angle detection device described in the first aspect, comprising the following steps: S1, obtain the voltage value of the first Hall element corresponding to the rotation angle of the magnet and the voltage difference between the first and third AMR anisotropic magnetoresistances; S2, determine the range of rotation angles corresponding to the magnet based on the voltage value of the first Hall element; S3, divide the angle of the magnet's half-rotation around its rotation center into six consecutive angle intervals, and define the compensation amount and output voltage value corresponding to each angle interval. Based on the voltage difference between the anisotropic magnetoresistance of the first to third AMRs, determine the angle interval corresponding to the rotation angle of the magnet, and obtain the corresponding compensation amount and output voltage value. S4. The rotation angle of the magnet is calculated based on the range of revolutions, angle interval, compensation amount, and output voltage value corresponding to the rotation angle of the magnet.

[0006] The advantages of this invention are: (1) Compared with existing solutions, the device and method proposed in this invention, through specific structural design and circuit layout, achieve lower complexity, maintenance requirements and manufacturing costs while maintaining cost advantages, and achieve high angular resolution while meeting the requirements of miniaturization and integration; (2) Based on the processing program built into the processing chip and the magnetic field characteristics of the anisotropic magnetoresistive field, after receiving the voltage signals from the Hall element and the anisotropic magnetoresistive field, the device and method proposed in this invention can accurately calculate the angular offset, which has the advantage of high sensitivity. At the same time, through specific circuit design, the processing chip processes the voltage difference between the anisotropic magnetoresistive fields under the same temperature conditions, which can eliminate the error caused by temperature conditions and ensure that the device has temperature stability and anti-interference ability. Attached Figure Description

[0007] The accompanying drawings are included to provide a further understanding of the embodiments and are incorporated in and constitute a part of this specification. The drawings illustrate embodiments and, together with the description, serve to explain the principles of the invention. Other embodiments and many anticipated advantages of the embodiments will be readily recognized as they become better understood through reference to the following detailed description. Elements in the drawings are not necessarily to scale. The same reference numerals refer to corresponding similar parts.

[0008] Figure 1 A cross-sectional structural schematic diagram of an angle detection device according to the present invention is shown; Figure 2 A schematic diagram of the surface structure of an angle detection device according to the present invention is shown; Figure 3 A schematic diagram of an angle detection device according to the present invention is shown, which measures the potential difference value using a Hall current sensor. Figure 4 A circuit equivalent schematic diagram of an angle detection device according to the present invention measuring potential difference via a Hall current sensor is shown. Figure 5 A schematic diagram of the differential arithmetic unit for measuring potential difference values ​​according to the present invention is shown; Figure 6 A circuit equivalent schematic diagram of an angle detection device according to the present invention measuring potential difference via a differential arithmetic unit is shown. Figure 7 A circuit equivalent schematic diagram is shown for measuring the number of zero-crossings of the voltage value of a first Hall element by a zero-crossing detection circuit according to an angle detection device of the present invention. Figure 8 A flowchart illustrating an angle detection method according to the present invention is shown; Figure 9A schematic diagram of the voltage-rotation angle relationship of a Hall element obtained by an angle detection method according to the present invention is shown. Figure 10 A schematic diagram of the voltage-rotation angle relationship of anisotropic magnetoresistance of an AMR obtained by an angle detection method according to the present invention is shown. Figure 11 A schematic diagram of the voltage difference-rotation angle relationship of anisotropic magnetoresistance (AMR) according to an angle detection method of the present invention is shown.

[0009] Explanation of reference numerals in the attached figures: 1. First relative rotating body; 101. Rotating shaft; 102. Magnet; 103. Bearing; 104. Fastening screw; 105. Processing chip; 2. Second relative rotating body; 201. First Hall element; 202. First AMR anisotropic magnetoresistive element; 203. Second AMR anisotropic magnetoresistive element; 204. Third AMR anisotropic magnetoresistive element; 205. Second resistor; 206. Third resistor; 207. Hall current sensor; 21. Non-inverting input terminal of differential arithmetic unit; 22. Inverting input terminal of differential arithmetic unit; 23. Output terminal of differential arithmetic unit; 24. Zero-crossing detection circuit; D1~D3, nodes; R1. First differential resistor; R2. Second differential resistor; ①. First angle interval; ②. Second angle interval; ③. Third angle interval; ④. Fourth angle interval; ⑤. Fifth angle interval; ⑥. Sixth angle interval. Detailed Implementation

[0010] The present application will now be described in further detail with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and not intended to limit it. Furthermore, it should be noted that, for ease of description, only the parts relevant to the invention are shown in the accompanying drawings.

[0011] Reference Figure 1 and Figure 2 According to a first aspect of the present invention, an angle detection device is provided, comprising a second relative rotating body 2 and a first relative rotating body 1.

[0012] The second relatively rotating body 2 is fixedly equipped with a first Hall element 201, a first AMR anisotropic magnetoresistive (AMR) 202, a second AMR anisotropic magnetoresistive (AMR) 203, a third AMR anisotropic magnetoresistive (AMR) 204, three second resistors 205, and three third resistors 206. The first to third AMR anisotropic magnetoresistives are respectively located at the trisection points of the same virtual circle, with one end grounded and the other end connected to one end of one of the second resistors 205 and one end of each of the three third resistors 206. The other ends of the three second resistors 205 are connected to the input voltage VCC. The line connecting the center of the virtual circle and the location of the first AMR anisotropic magnetoresistive (AMR) 202 is perpendicular to the line connecting the center of the virtual circle and the location of the first Hall element 201 and intersects the center of the virtual circle.

[0013] The device proposed in this invention has strict requirements on the relative positions of the Hall element and the AMR resistor, so that the amplitude and phase of the voltage signals generated on both sides of the AMR resistor and the Hall element correspond one-to-one, thereby ensuring high precision and accuracy of angle measurement.

[0014] The first relative rotating body 1 is provided with a magnet 102, and the magnet 102 rotates relative to the second relative rotating body 2.

[0015] In one embodiment, the first relative rotating body is provided with a rotating shaft 101, the magnet 102 is disposed on the end face of one end of the rotating shaft 101, and the center of the virtual circle is located on the center line of the magnet 102, and the rotating shaft 101 is rotatably connected to the first relative rotating body.

[0016] In one embodiment, the second relative rotating body 2 is fixedly disposed on the outer surface of the first relative rotating body 1, one end of the rotating shaft 101 is close to the inner surface of the first relative rotating body 1 relative to the second relative rotating body 2, and the other end of the rotating shaft 101 passes through the first relative rotating body 1 and is rotatably connected to the first relative rotating body 1.

[0017] The first relative rotating body 1 is also fixedly provided with a bearing 103 and a fastening screw 104. The other end of the rotating shaft 101 is inserted into the bearing 103 and the rotating shaft 101 is rotatably connected to the bearing 103 and fixed by the fastening screw 104.

[0018] The resistance of the third resistor 206 is set to be much greater than that of the second resistor 205, so as to facilitate the measurement of the potential difference of the anisotropic magnetoresistance of the AMR and the stabilization of the circuit.

[0019] The second relative rotating body 2 is provided with a processing chip 105, which is used to obtain the voltage value of the first Hall element corresponding to the rotation angle of the magnet and the voltage difference between the first to third AMR anisotropic magnetoresistance to calculate the rotation angle of the magnet 102.

[0020] Reference Figure 3 and Figure 4 In one embodiment, the second relative rotating body 2 is provided with three Hall current sensors, which are used to measure the current flowing through the three third resistors to calculate the voltage difference between the first and third AMR anisotropic magnetoresistors. Specifically, the potential difference V between the first AMR anisotropic magnetoresistor 202 and the second AMR anisotropic magnetoresistor 203 is measured. 12 For example, the Hall current sensor 207 measures the current in the branches corresponding to nodes D1 and D2. The potential difference V can be obtained by multiplying the obtained current value by the resistance value of the third resistor. 12 Similarly, when measuring the current in the branches corresponding to nodes D2 and D3, the potential difference V can be obtained by multiplying the obtained current value by the resistance value of the third resistor. 23 When measuring the current in the branches corresponding to nodes D3 and D1, the potential difference V can be obtained by multiplying the obtained current value by the resistance value of the third resistor. 31 .

[0021] Reference Figure 5 and Figure 6 In one embodiment, the second relative rotating body 2 is provided with three differential operators, which are used to calculate the voltage difference between the anisotropic magnetoresistances of the first to third AMRs. The structure of the differential operators is as follows: Figure 5 As shown, the potential difference V between the first AMR anisotropic magnetoresistance 202 and the second AMR anisotropic magnetoresistance 203 is measured. 12 For example, the branch corresponding to the non-inverting input 21 of the differential arithmetic unit and the branch corresponding to the inverting input 22 of the differential arithmetic unit are connected to nodes D1 and D2 respectively to measure the potential difference between nodes D1 and D2. The value is then output through the output terminal 23 of the differential arithmetic unit, and the potential difference V can be obtained through the calculation of the differential arithmetic unit. 12 In this circuit, R1 is the first differential resistor of the differential amplifier, and R2 is the second differential resistor. During measurement, setting the resistance of R1 equal to the resistance of R2 yields the potential difference V. 12 Similarly, the potential difference V between nodes D2 and D3 is measured using a differential arithmetic unit. 23 The potential difference V between nodes D3 and D1 is measured using a differential arithmetic unit. 31 .

[0022] like Figure 7 As shown, in one embodiment, the second relative rotating body 2 is provided with a zero-crossing detection circuit 24, which is used to obtain the number of zero-crossings of the voltage value of the first Hall element 201 based on the voltage value of the first Hall element 201, thereby determining the range of rotation angles corresponding to the magnet 102. In the prior art, there are various schemes for the specific circuit configuration of the zero-crossing detection circuit 24. When applied to the present invention, those skilled in the art can select and configure it according to the actual needs of the present invention.

[0023] Reference Figure 8 According to a second aspect of the present invention, an angle detection method is provided, comprising the following steps according to an angle detection device according to a first aspect: S1, obtain the voltage value of the first Hall element corresponding to the rotation angle of the magnet and the voltage difference between the first and third AMR anisotropic magnetoresistances; S2, determine the range of rotation angles corresponding to the magnet based on the voltage value of the first Hall element; S3, divide the angle of the magnet's half-rotation around its rotation center into six consecutive angle intervals, and define the compensation amount and output voltage value corresponding to each angle interval. Based on the voltage difference between the anisotropic magnetoresistance of the first to third AMRs, determine the angle interval corresponding to the rotation angle of the magnet, and obtain the corresponding compensation amount and output voltage value. S4. The rotation angle of the magnet is calculated based on the range of revolutions, angle interval, compensation amount, and output voltage value corresponding to the rotation angle of the magnet.

[0024] Specifically, S2 determines the range of rotation angles corresponding to the magnet's revolutions based on the voltage value of the first Hall element, including: Assume that when the magnet is in its initial position, the initial value of the rotation range flag is 0. When the number of zero-crossings of the voltage value of the first Hall element is detected to be an even number, the number of cycles flag = 0; When the number of zero-crossings of the voltage value of the first Hall element is detected to be an odd number, the number of cycles flag = 1.

[0025] S3 specifically includes: When (V) 12 <0 &V 23 ≥0 &V 31 When >0), the corresponding angle range =1, output voltage value V=V 23 The compensation amount α = 0°; When (V) 12 <0 &V 23>0 &V 31 When ≤0), the corresponding angle interval =2, output voltage value V=V 12 The compensation amount α = 30°; When (V) 12 ≥0 &V 23 >0 &V 31 When <0), the corresponding angle interval =3, output voltage value V=V 12 The compensation amount α = 60°; When (V) 12 >0 &V 23 ≤0 &V 31 When <0), the corresponding angle interval =4, output voltage value V=V 31 The compensation amount α = 90°; When (V) 12 >0 &V 23 <0 &V 31 When ≥0), the corresponding angle interval =5, output voltage value V=V 31 The compensation amount α = 120°; When (V) 12 ≤0 &V 23 <0 &V 31 When >0), the corresponding angle range =6, output voltage value V=V 23 The compensation amount α = 150°.

[0026] S4 specifically includes: When the rotation angle of the magnet corresponds to the number of revolutions range flag=0, the rotation angle of the magnet ; When the rotation angle of the magnet corresponds to the number of revolutions range flag=1, the rotation angle of the magnet ; in, Indicates the amount of compensation. This indicates the corresponding angle range. Indicates the output voltage value. This represents the maximum value of the anisotropic magnetoresistance voltage in an AMR.

[0027] The specific embodiment of the detection method of the above-mentioned angle detection device is as follows: When the angle detection device is running, as the magnet rotates, the Hall element outputs a sinusoidal voltage signal with an amplitude as follows: Figure 9As shown.

[0028] The rotation angle range can be determined by the voltage value of the first Hall element. Specifically, the rotation range is determined by the number of times the voltage value crosses zero during the process of the magnet moving from the initial position to the final stopping position. When the number of zero-crossings of the voltage value of the first Hall element is even, the rotation range flag = 0; when the number of zero-crossings of the voltage value of the first Hall element is odd, the rotation range flag = 1.

[0029] The resistivity of an anisotropic magnetoresistive (AMR) changes with the angle between the magnetization and the current direction. The resistance is minimum when the current direction is parallel to the magnetization and maximum when the current direction is perpendicular to the magnetization. Therefore, the three anisotropic magnetoresistive AMRs output voltage signals with a 60° phase difference, as shown in the graph. Figure 10 As shown, V1, V2, and V3 represent the voltages corresponding to the first, second, and third anisotropic magnetoresistors (AMRs), respectively. The processing chip calculates the potential difference between the voltage values ​​of each pair of AMRs, resulting in the image shown. Figure 11 As shown, after calculation, the voltage difference and the coefficient of increase or decrease of the rotation angle are approximately constant.

[0030] Therefore, by designing a specific arrangement of AMR resistors and Hall elements, the phase correspondence between the voltage values ​​of AMR resistors and Hall elements can be achieved, thereby determining the angular offset within the range of 0° to 360° through pairwise correspondence.

[0031] Based on the curve of the anisotropic magnetoresistance voltage difference in AMR, the angle of half a revolution of the magnet around its rotation center is divided into six consecutive angular intervals of 30°. According to the sign of the potential difference, these intervals are: the first angular interval, the second angular interval, the third angular interval, the fourth angular interval, the fifth angular interval, and the sixth angular interval. Figure 11 The line segments highlighted by the solid black line represent the function values ​​of the output voltage V in each angular interval. Figure 11 The numbers ①, ②, ③, ④, ⑤, and ⑥, marked with black dashed lines, correspond to the first, second, third, fourth, fifth, and sixth angle intervals, respectively. See below for details: The angle range of the first angle interval is The corresponding compensation amount When the angle is 0°, the output voltage V is equal to the voltage difference V between the second AMR anisotropic magnetoresistance and the third AMR anisotropic magnetoresistance. 23 ; The angle range of the second angle interval is The corresponding compensation amount The angle is equal to 30°, and the output voltage V is equal to the voltage difference V between the first AMR anisotropic magnetoresistance and the second AMR anisotropic magnetoresistance. 12 ; The angle range of the third angle interval is: The corresponding compensation amount The angle is equal to 60°, and the output voltage V is equal to the voltage difference V between the first AMR anisotropic magnetoresistance and the second AMR anisotropic magnetoresistance. 12 ; The angle range of the fourth angle interval is: The corresponding compensation amount The angle is equal to 90°, and the output voltage V is equal to the voltage difference V between the third AMR anisotropic magnetoresistance and the first AMR anisotropic magnetoresistance. 31 ; The angle range of the fifth angle interval is: The corresponding compensation amount The angle is equal to 120°, and the output voltage V is equal to the voltage difference V between the third AMR anisotropic magnetoresistance and the first AMR anisotropic magnetoresistance. 31 ; The angle range of the sixth angle interval is: The corresponding compensation amount The angle is equal to 150°, and the output voltage V is equal to the voltage difference V between the second AMR anisotropic magnetoresistance and the third AMR anisotropic magnetoresistance. 23 .

[0032] As the magnet rotates in the same direction, the output voltage V obtained by the processing chip does not change continuously and uniformly within the six equal angular intervals. Instead, it is a periodic function with a period of 60°, and the amplitude of each angular interval exhibits jumps. Furthermore, the value is positive in odd-numbered intervals and negative in even-numbered intervals. Therefore, the actual rotation angle can be obtained by using the defined proportional relationship between the output voltage V and the rotation angle, plus the corresponding compensation amount.

[0033] Within the 0°-180° range defined by the first to sixth angle intervals, when the magnet rotates to a certain position, once the corresponding angle interval is determined, the current rotation angle can be accurately calculated using the compensation amount and the output voltage value. Within the 180°-360° range, since the trend of the output voltage value V and the rotation angle is the same as in the first to sixth angle intervals, the rotation angle in the 180°-360° range can be calculated by adding 180° to the calculation of the 0°-180° range. Whether the rotation angle is greater than 180° can be determined by the voltage value of the Hall element.

[0034] Therefore, when the rotation angle of the magnet corresponds to the number of revolutions range flag=0, the rotation angle of the magnet... When the rotation angle of the magnet corresponds to the number of revolutions range flag=1, the rotation angle of the magnet... In this embodiment, the maximum voltage difference Vp = 1.

[0035] Assume the relationship between the three obtained anisotropic magnetoresistance voltage differences of the AMR is: V 12 <0, V 23 <0, V 31 >0, the voltage values ​​of the Hall element obtained are related as follows: if the number of zero crossings is even, it can be determined that the angle interval corresponding to the rotation angle is the sixth angle interval, flag=0, angle interval =6, output voltage value V=V 23 The compensation amount α = 150° .

[0036] The angle detection device designed in this scheme is based on the processing program built into the processing chip and the magnetic field characteristics of the anisotropic magnetoresistive field. After receiving the voltage signals from the Hall element and the anisotropic magnetoresistive field, the device and method proposed in this invention can accurately calculate the angle offset, exhibiting the advantage of high sensitivity. Simultaneously, through specific circuit design, the processing chip processes the voltage difference between the anisotropic magnetoresistive fields under the same temperature conditions, eliminating errors caused by temperature conditions and ensuring that the device has temperature stability and anti-interference capabilities.

[0037] It should be noted that, unless otherwise specified, the embodiments and features described in this application can be combined with each other. This application will now be described in detail with reference to the accompanying drawings and embodiments.

[0038] The above description is merely a preferred embodiment of this application and an explanation of the technical principles employed. Those skilled in the art should understand that the scope of the invention involved in this application is not limited to technical solutions formed by specific combinations of the above-described technical features, but should also cover other technical solutions formed by arbitrary combinations of the above-described technical features or their equivalents without departing from the above-described inventive concept. For example, technical solutions formed by substituting the above features with (but not limited to) technical features with similar functions disclosed in this application.

Claims

1. An angle detection device, characterized in that, The system includes a first relative rotating body and a second relative rotating body. The first relative rotating body is equipped with a magnet, which rotates relative to the second relative rotating body. The second relative rotating body is equipped with a first Hall element, a first to third AMR anisotropic magnetoresistive resistors, three second resistors, and three third resistors. The first to third AMR anisotropic magnetoresistive resistors are located at the trisection points of the same virtual circle, with one end grounded and the other end connected to one end of one of the second resistors and one end of each of the three third resistors, respectively. The other ends of the three second resistors are connected to the input voltage. The line connecting the center of the virtual circle and the location of the first AMR anisotropic magnetoresistive resistor is perpendicular to the line connecting the center of the virtual circle and the location of the first Hall element and intersects the center of the virtual circle.

2. The angle detection device according to claim 1, characterized in that, The first relative rotating body is provided with a rotating shaft, the magnet is disposed on the end face of one end of the rotating shaft, and the center of the virtual circle is located on the center line of the magnet. The rotating shaft is rotatably connected to the first relative rotating body.

3. The angle detection device according to claim 1, characterized in that, The second relative rotating body is provided with a processing chip for obtaining the voltage value of the first Hall element and the voltage difference between the first and third AMR anisotropic magnetoresistances to calculate the rotation angle of the magnet.

4. The angle detection device according to claim 3, characterized in that, The second relative rotating body is provided with three Hall current sensors, which are used to measure the current values ​​flowing through the three third resistors to calculate the voltage difference between the first to third AMR anisotropic magnetoresistance.

5. The angle detection device according to claim 3, characterized in that, The second relative rotating body is provided with three differential operators, which are used to calculate the voltage difference between the anisotropic magnetoresistance of the first to third AMRs.

6. The angle detection device according to claim 3, characterized in that, The second relative rotating body is provided with a zero-crossing detection circuit, which is used to obtain the number of zero-crossings of the voltage value of the first Hall element based on the voltage value of the first Hall element, thereby determining the range of rotation angles of the magnet.

7. An angle detection method, characterized in that, The method utilizes the angle detection device according to any one of claims 1-6, and includes the following steps: S1, obtain the voltage value of the first Hall element corresponding to the rotation angle of the magnet and the voltage difference between the first and third AMR anisotropic magnetoresistances; S2, determine the range of rotation angles corresponding to the magnet based on the voltage value of the first Hall element; S3, divide the angle of the magnet's half-rotation around its rotation center into six consecutive angle intervals, and define the compensation amount and output voltage value corresponding to each angle interval. Based on the voltage difference between the anisotropic magnetoresistance of the first to third AMRs, determine the angle interval corresponding to the rotation angle of the magnet, and obtain the corresponding compensation amount and output voltage value. S4. The rotation angle of the magnet is calculated based on the range of revolutions, angle interval, compensation amount, and output voltage value corresponding to the rotation angle of the magnet.

8. The angle detection method according to claim 7, characterized in that, The range of rotation angles corresponding to the magnet's rotation in S2, determined based on the voltage value of the first Hall element, specifically includes: Assume that when the magnet is in its initial position, the initial value of the rotation range flag is 0. When the number of zero-crossings of the voltage value of the first Hall element is detected to be an even number, the number of cycles flag = 0; When the number of zero-crossings of the voltage value of the first Hall element is detected to be an odd number, the number of cycles flag = 1.

9. The angle detection method according to claim 7, characterized in that, S3 specifically includes: When (V) 12 <0 &V 23 ≥0 &V 31 When >0), the corresponding angle range =1, output voltage value V=V 23 The compensation amount α = 0°; When (V) 12 <0 &V 23 >0 &V 31 When ≤0), the corresponding angle interval =2, output voltage value V=V 12 The compensation amount α = 30°; When (V) 12 ≥0 &V 23 >0 &V 31 When <0), the corresponding angle interval =3, output voltage value V=V 12 The compensation amount α = 60°; When (V) 12 >0 &V 23 ≤0 &V 31 When <0), the corresponding angle interval =4, output voltage value V=V 31 The compensation amount α = 90°; When (V) 12 >0 &V 23 <0 &V 31 When ≥0), the corresponding angle range =5, output voltage value V=V 31 The compensation amount α = 120°; When (V) 12 ≤0 &V 23 <0 &V 31 When >0), the corresponding angle range =6, output voltage value V=V 23 The compensation amount α = 150°.

10. The angle detection method according to claim 7, characterized in that, S4 specifically includes: When the rotation angle of the magnet corresponds to the number of revolutions range flag=0, the rotation angle of the magnet ； When the rotation angle of the magnet corresponds to the number of revolutions range flag=1, the rotation angle of the magnet ； in, Indicates the amount of compensation. This indicates the corresponding angle range. Indicates the output voltage value. This represents the maximum value of the anisotropic magnetoresistance voltage in an AMR.

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