Gas detection system

Abstract

The embodiment of the invention provides a gas detection system, and aims to realize simultaneous detection of the concentration of multi-element gas and improve the detection efficiency of the gas detection system. In the gas detection system provided by the invention, a gas enrichment chip is located in a detection chamber, the gas enrichment chip comprises a plurality of micro enrichment units, different micro enrichment units are respectively used for adsorbing different gases in the detection chamber, and the micro enrichment units are also used for releasing the adsorbed gases into the detection chamber again; the gas detection chip is also located in the detection chamber and comprises a plurality of miniature semiconductor gas sensors, and the miniature semiconductor gas sensors are used for detecting gas in different detection chambers respectively. For the detection requirement of low-concentration gas, the gas enrichment chip quickly releases the pre-enriched gas into the closed micro detection chamber, and the gas detection chip detects the gas, so that the concentration of different gases can be detected at the same time, and the detection efficiency of the gas detection system is improved.

Description

Technical Field

[0001] This application relates to the field of gas detection technology, and more particularly to a gas detection system. Background Technology

[0002] Metal-oxide-semiconductor (MOS) gas sensors are characterized by high sensitivity, fast response, miniaturization, and low cost, making them suitable for portable gas detection applications. However, in fields such as residual gas detection and trace gas detection, where there are multiple target gases, very low concentrations of target gases, and small sample sizes, the detection capabilities of portable gas detection devices based on MOS gas sensors are exceeded, necessitating improvements. Currently, gas detection systems for multi-element trace gas detection use gas enrichment devices to increase gas concentration. Traditional gas enrichment devices are bulky, use a single enrichment material resulting in a limited number of gas components that can be enriched, require high heating power to release the gas, and necessitate large detection chambers with external gas cylinders or pumps. This leads to high gas consumption, low sample utilization, and waste of samples during the detection process. Summary of the Invention

[0003] This application provides a gas detection system designed to simultaneously detect the concentration of multiple gases, thereby reducing power consumption and size, and improving the detection efficiency of the gas detection system.

[0004] On one hand, embodiments of this application provide a gas detection system, including a detection chamber, a gas enrichment chip, and a gas detection chip. Both the gas enrichment chip and the gas detection chip belong to microelectromechanical system chips. The detection chamber is provided with an air inlet and an air outlet. The gas enrichment chip is located in the detection chamber and includes multiple micro-enrichment units, which are used to adsorb different gases in the detection chamber. The micro-enrichment units are also used to release the adsorbed gases back into the detection chamber. The gas detection chip is also located in the detection chamber and includes multiple micro-semiconductor gas sensors, which are used to detect gases in different detection chambers.

[0005] A gas detection system according to an embodiment of this application is manufactured by the following steps:

[0006] Step 1: Multiple micro-heating elements for the gas detection chip are fabricated on a silicon wafer using microelectromechanical systems (MEMS) fabrication technology. In this embodiment, the micro-heating elements are suspended dielectric films with embedded platinum thin-film heating resistance wires. The dielectric film material is a double-layer film of silicon oxide and silicon nitride, with a thickness of 1–3 micrometers. Each gas detection chip has four micro-heating elements, and the heating area of ​​each micro-heating element is a square with a side length of 100 micrometers. Each gas detection chip has a side length of 1 millimeter.

[0007] Step 2: Multiple micro-heating elements and electrothermal actuators for the gas enrichment chip are fabricated on a silicon wafer using microelectromechanical systems (MEMS) fabrication technology. In this embodiment, the micro-heating elements and electrothermal actuators are suspended dielectric films with embedded platinum thin-film heating resistance wires. The dielectric film material is a bilayer film of silicon oxide and silicon nitride, with a thickness of 1–3 micrometers. Each gas enrichment chip has four micro-heating elements, and the heating area of ​​each micro-heating element is a square with a side length of 500 micrometers. The electrothermal actuator is located in the middle of the bridge arm connecting the micro-heating element and the chip substrate. Each gas enrichment chip has a side length of 2 millimeters.

[0008] Step 3: Using electrohydrodynamic printing technology, four thin-film gas-sensitive materials with different gas-sensing properties are printed on the four micro-heating elements on the gas detection chip. This completes the fabrication of the micro-semiconductor gas sensor. Using electrohydrodynamic printing technology, four thick-film porous materials with different gas adsorption properties are printed on the four micro-heating elements on the gas enrichment chip, completing the fabrication of the MEMS micro-hotplate gas enrichment array chip.

[0009] Step 4: Install the gas enrichment chip and the gas detection chip on the upper surface of the electronic device's circuit board. The electrical connection between them and the electronic device is achieved through the metal wires on the circuit board.

[0010] Step 5: Use microelectromechanical processes to etch the cavity of the gas detection system, as well as the air inlet and outlet, onto the glass plate to complete the cover plate processing.

[0011] Step 6: Bond the cover plate to the electronic device, with the gas enrichment chip and gas detection chip located inside the cavity of the cover plate.

[0012] Step 7: Attach the Teflon tubing to the air inlet and outlet of the cavity.

[0013] The gas detection system provided in this application includes a gas enrichment chip comprising multiple micro-enrichment units, each used to adsorb different gases in a detection chamber. These micro-enrichment units also release the adsorbed gases back into the detection chamber. A gas detection chip, also located within the detection chamber, includes multiple micro-semiconductor gas sensors. These sensors work together to detect gases in different detection chambers. This allows for the simultaneous detection of different gas concentrations, improving integration, reducing power consumption, extending the gas detection lower limit, and enhancing the detection efficiency of the gas detection system.

[0014] In some embodiments, the gas detection system further includes a circuit board, which is independently set apart from the detection chamber, and the miniature enrichment unit and the miniature semiconductor gas sensor are both electrically connected to the circuit board.

[0015] In some implementations, the circuit board is located on one side of the detection chamber, and the gas enrichment chip and the gas detection chip connected to the circuit board are arranged at intervals along the inner wall of the detection chamber, that is, the gas enrichment chip and the gas detection chip are arranged at intervals in the horizontal direction.

[0016] In other embodiments, two circuit boards may be provided, located on the upper and lower sides of the detection chamber respectively. The gas enrichment chip is electrically connected to one of the circuit boards, and the gas detection chip is electrically connected to the other circuit board. The gas enrichment chip and the gas detection chip are respectively positioned on two opposite inner walls of the detection chamber. The micro-enrichment units on the gas enrichment chip and the micro-semiconductor gas sensors on the gas detection chip are positioned opposite each other, facilitating the detection of the gas concentration released by the micro-enrichment units by the micro-semiconductor gas sensors. In this embodiment, multiple micro-enrichment unit arrays and multiple micro-semiconductor gas sensor arrays are arranged, with each micro-enrichment unit and each micro-semiconductor gas sensor corresponding to the others, meaning that one micro-enrichment unit and one micro-semiconductor gas sensor are positioned opposite each other in the arrangement direction of the gas enrichment chip and the gas detection chip.

[0017] In some embodiments, the micro-enrichment unit is provided with an adsorbent material, including a porous polymer resin based on 2,6-diphenylfuran, activated carbon, MOF material, or zeolite material. Specifically, the thickness of the adsorbent material in the micro-enrichment unit is 30–100 micrometers, and the side length is 200–800 micrometers.

[0018] The above configuration allows different micro-enrichment units to adsorb different gas components, enabling simultaneous detection of different gas concentrations and improving the detection efficiency of the gas detection system. Specifically, porous polymer resins based on 2,6-diphenylfuran are used to adsorb highly volatile organic compounds, activated carbon is used to adsorb non-polar and weakly polar organic compounds, MOF materials are used to adsorb hydrogen and methane, and zeolite materials are used to adsorb polar small molecule gases (e.g., ammonia, hydrogen sulfide, sulfur dioxide, etc.).

[0019] In some embodiments, the miniature semiconductor gas sensor is equipped with a gas-sensitive material, including but not limited to tin dioxide, palladium- and antimony-doped tin dioxide, cobalt oxide, and palladium-doped tungsten trioxide. This configuration allows different miniature semiconductor gas sensors to generate different gas-sensitive signals for different gas components, enabling simultaneous detection of different gas concentrations and improving the detection efficiency of the gas detection system. Specifically, tin dioxide is more sensitive to highly volatile organic compounds, methane, and hydrogen; palladium- and antimony-doped tin dioxide is more sensitive to hydrogen sulfide and sulfur dioxide; cobalt oxide is more sensitive to methane; and palladium-doped tungsten trioxide is more sensitive to ammonia and nitrogen oxides.

[0020] In some embodiments, the micro-enrichment unit includes a micro-heating element, an electrothermal drive element, and an adsorbent material, with the adsorbent material located on the side of the micro-heating element facing the micro-semiconductor gas sensor. When the micro-heating element of the micro-enrichment unit is in a non-heating state and the electrothermal drive element is in a resting state, the adsorbent material can adsorb the corresponding components in the gas; when the micro-heating element of the micro-enrichment unit is in a heating state, the adsorbent material of the micro-enrichment unit releases the corresponding components in the gas. Simultaneously, the electrothermal drive element is in an AC drive state, causing the micro-enrichment unit to vibrate, causing the gas components to break free from the adsorbent material and be released into the cavity. With the above configuration, the micro-enrichment unit can be controlled to adsorb or release gas by the micro-heating element and the electrothermal drive element. The total power of the micro-heating element and the electrothermal drive element is 0.05–0.2 W. Since the gas enrichment chip is a microelectromechanical system, the power of the micro-heating element and the electrothermal drive element can also be reduced, thereby reducing the energy consumption of the gas detection system during the detection process.

[0021] In some embodiments, the gas detection system further includes an inlet pipe, an outlet pipe, a syringe, and two valves; the inlet pipe connects the syringe and the inlet, the outlet pipe connects to the outlet, and the two valves are respectively disposed on the inlet pipe and the outlet pipe for controlling the connection or disconnection of the inlet pipe and the outlet pipe. The syringe includes a first syringe and a second syringe, which are detachably connected to the inlet pipe. The first syringe is used to inject clean air into the detection chamber, and the second syringe is used to inject the gas to be detected into the detection chamber.

[0022] In some embodiments, the gas detection system further includes an electronic device electrically connected to the gas detection chip. The electronic device receives electrical signals generated by the gas detection chip; for example, the electronic device may include a computer, a microcontroller, etc. Attached Figure Description

[0023] Figure 1 This is a schematic diagram of the gas detection system in the embodiments of this application. Figure 1 ;

[0024] Figure 2 This is a schematic diagram of the gas detection system in the embodiments of this application. Figure 2 ;

[0025] Figure 3 This is a schematic diagram of the structure of the gas detection chip in the gas detection system of this application embodiment;

[0026] Figure 4 This is a schematic diagram of the structure of the gas enrichment chip in the gas detection system of this application embodiment.

[0027] Reference numerals: 100, gas detection system; 20, gas detection chip; 21, miniature semiconductor gas sensor; 30, gas enrichment chip; 31, miniature enrichment unit; 40, electronic device; 50, circuit board; 60, inlet pipe; 70, outlet pipe; 80, syringe; 90, valve. Detailed Implementation

[0028] To better understand the technical solutions provided in the embodiments of this specification, the technical solutions of the embodiments of this specification will be described in detail below with reference to the accompanying drawings and specific embodiments. It should be understood that the embodiments of this specification and the specific features in the embodiments are detailed descriptions of the technical solutions of the embodiments of this specification, rather than limitations on the technical solutions of this specification. In the absence of conflict, the embodiments of this specification and the technical features in the embodiments can be combined with each other.

[0029] In this document, relational terms such as "first" and "second" are used merely to distinguish one entity or operation from another, without necessarily requiring or implying any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes said element. The term "two or more" includes two or more cases.

[0030] Reference Figure 1 and Figure 2 This application provides a gas detection system 100, which includes a detection chamber 10 and a gas detection chip 20. The detection chamber 10 contains gas; the gas detection chip 20 is located within the detection chamber 10 and is a microelectromechanical system (MEMS) chip. The gas detection chip 20 detects a certain component in the gas within the detection chamber 10. The gas detection chip 20 has a preset concentration threshold. When the concentration of a certain component in the gas reaches the preset concentration threshold, the gas detection chip 20 generates an electrical signal. Furthermore, when the concentration of a certain component in the gas is greater than the preset concentration threshold, the greater the difference between the concentration of the certain component and the preset concentration threshold, the stronger the electrical signal generated by the gas detection chip 20 (exemplarily, the electrical signal can be expressed as a voltage value or a current value).

[0031] When the concentration of a certain component in the gas does not reach a preset concentration threshold, the gas detection chip 20 will not generate an electrical signal. The gas detection system 100 provided in this embodiment also includes a gas enrichment chip 30, located within the detection chamber 10. The gas enrichment chip 30 is also a microelectromechanical system (MEMS) chip. It is used to adsorb a certain component from the gas within the detection chamber 10. When the gas enrichment chip 30 adsorbs a certain amount of the component, it can release the component back into the detection chamber 10, thereby increasing the concentration of the component within the detection chamber 10 and ensuring that its concentration reaches the preset concentration threshold. The concentration of the component in the gas is detected by the operating time of the gas enrichment chip 30 and the electrical signal generated by the gas detection chip 20.

[0032] In the above embodiments, the gas detection system 100 further includes an electronic device 40, which is electrically connected to the gas detection chip 20. The electronic device 40 is used to receive and transmit electrical signals generated by the gas detection chip 20. For example, the electronic device 40 may include a computer, a microcontroller, a Bluetooth module, etc. The electronic device 40 is electrically connected to the gas detection chip 20 via a circuit board 50.

[0033] In the above embodiments, the detection chamber 10 is provided with an air inlet and an air outlet; the gas enrichment chip 30 includes multiple micro-enrichment units 31, which are respectively used to adsorb different gases in the detection chamber 10, and the micro-enrichment units 31 are also used to release the adsorbed gas back into the detection chamber 10. The gas detection chip 20 includes multiple micro-semiconductor gas sensors 21, which are respectively used to detect gases in different detection chambers 10.

[0034] In the gas detection system 100 provided in this application, the gas enrichment chip 30 is a microelectromechanical system chip (MEMS) comprising multiple micro-enrichment units 31. Each micro-enrichment unit 31 is used to adsorb different gases in the detection chamber 10, and each micro-enrichment unit 31 is also used to release the adsorbed gas back into the detection chamber 10. The gas detection chip 20 is also a MEMS chip located within the detection chamber 10. The gas detection chip 20 includes multiple micro-semiconductor gas sensors 21, each of which is used to detect gases in different detection chambers 10. This enables simultaneous detection of different gas concentrations, improves integration, reduces power consumption, extends the lower limit of gas detection, and improves the detection efficiency of the gas detection system 100.

[0035] In the above embodiments, the volume of the detection chamber 10 is 0.6ml-1.2ml. For example, the detection chamber 10 can be a cavity with a length, width, and height of 1cm, 1cm, and 0.6cm, respectively. Multiple micro-enrichment units 31 and multiple micro-semiconductor gas sensors 21 are integrated in the detection chamber 10. By reducing the volume of the detection chamber 10 and implementing the gas enrichment chip 30 and the gas detection chip 20 in a chip manner, the requirement of the detection chamber 10 for detection samples can be reduced, thereby reducing the waste of detection samples during the detection process.

[0036] In the above embodiments, the gas detection system 100 further includes a circuit board 50, which is independently disposed from the detection chamber 10. The miniature enrichment unit 31 and the miniature semiconductor gas sensor 21 are both electrically connected to the circuit board 50. In some embodiments, refer to... Figure 1 The circuit board 50 is located on one side of the detection chamber 10. The gas enrichment chip 30 and the gas detection chip 20, which are connected to the circuit board 50, are spaced apart along the inner wall of the detection chamber 10, that is, the gas enrichment chip 30 and the gas detection chip 20 are spaced apart in the horizontal direction. In other embodiments, refer to... Figure 2 Two circuit boards 50 can be provided, with the two circuit boards 50 located on the upper and lower sides of the detection chamber 10 respectively. The gas enrichment chip 30 is electrically connected to one of the circuit boards 50, and the gas detection chip 20 is electrically connected to the other circuit board 50. The gas enrichment chip 30 and the gas detection chip 20 are respectively set on two opposite inner walls of the detection chamber 10, and the micro-enrichment unit 31 on the gas enrichment chip 30 is set opposite to the micro-semiconductor gas sensor 21 on the gas detection chip 20, so that the micro-semiconductor gas sensor 21 can quickly detect the gas concentration released by the micro-enrichment unit 31.

[0037] Continue to refer to Figure 1 and Figure 2 In the above embodiment, the micro-enrichment unit 31 includes a micro-heating element and an adsorbent material, with the adsorbent material located on the side of the micro-heating element facing the micro-semiconductor gas sensor 21. When the micro-heating element is not heated, the adsorbent material adsorbs corresponding components in the gas; when the micro-heating element is heated and the electrothermal drive is vibrating, the adsorbent material releases corresponding components from the gas. Through this configuration, the micro-enrichment unit 31 can be controlled to adsorb or release gas via the micro-heating element. The total power of the micro-heating element and the electrothermal drive of the micro-enrichment unit is 0.05–0.1 W. Since the gas enrichment chip 30 is implemented using a chip, the power of the micro-heating element and the electrothermal drive can be reduced, thereby reducing the energy consumption of the gas detection system 100 during the detection process.

[0038] The aforementioned electronic device 40 is used to provide power to the miniature heating element and the electrothermal drive element. By integrating the miniature heating element and the electrothermal drive element into the gas enrichment chip 30, the conventional use of external miniature heating elements and external airflow drive devices can be replaced, which can reduce the demand for test samples in the detection chamber 10, thereby reducing the waste of test samples during the detection process.

[0039] In embodiments where the gas enrichment chip 30 includes multiple micro-enrichment units 31, each micro-enrichment unit 31 may have different adsorption materials, including porous polymer resins based on 2,6-diphenylfuran, activated carbon materials, MOF materials, and zeolite materials. This allows different enrichment chips to adsorb different gas components, enabling simultaneous detection of different gas concentrations and improving the detection efficiency of the gas detection system 100. Specifically, the porous polymer resin based on 2,6-diphenylfuran is used to adsorb highly volatile organic compounds, activated carbon is used to adsorb non-polar and weakly polar organic compounds, MOF materials are used to adsorb methane, and zeolite materials are used to adsorb polar small molecule gases (e.g., ammonia, hydrogen sulfide, sulfur dioxide, etc.).

[0040] In an embodiment where the gas detection chip 20 includes multiple miniature semiconductor gas sensors 21, each miniature semiconductor gas sensor 21 includes a miniature heating element and a gas-sensitive material, with the gas-sensitive material located on the side of the miniature heating element facing the miniature enrichment unit 31. The miniature heating element provides an optimal operating temperature for the gas-sensitive material. Each miniature semiconductor gas sensor 21 may have a thin-film gas-sensitive material with different gas-sensitive properties. The thin-film gas-sensitive material includes, but is not limited to, doped or pure metal oxide semiconductors such as tin oxide, tungsten oxide, cobalt oxide, and copper oxide. The doped material includes, but is not limited to, materials such as platinum, gold, palladium, and antimony.

[0041] In some embodiments, the gas detection system 100 further includes an inlet pipe 60, an outlet pipe 70, a syringe 80, and valves 90. The inlet pipe 60 connects the syringe 80 and the inlet, the outlet pipe 70 connects to the outlet, and two valves 90 are respectively disposed on the inlet pipe 60 and the outlet pipe 70 for controlling the connection or disconnection of the inlet pipe 60 and the outlet pipe 70. The syringe 80 includes a first syringe and a second syringe, which are detachably connected to the inlet pipe 60. The first syringe is used to inject clean air into the detection chamber 10, and the second syringe is used to inject the gas to be detected into the detection chamber 10. The first syringe and the second syringe are uniquely connected to the inlet pipe; that is, when the first syringe is connected to the inlet pipe 60, the second syringe is not connected to the inlet pipe 60, and when the second syringe is connected to the inlet pipe 60, the first syringe is not connected to the inlet pipe 60.

[0042] Both the first and second syringes can be 5-20 ml micro-syringes 80, and the first and second syringes can inject gas into the detection chamber 10 at an injection rate of 0.02-0.2 ml / s.

[0043] The gas detection system 100 process includes a cleaning phase and a detection phase.

[0044] Cleaning stage: First, the valves 90 on the inlet pipe 60 and outlet pipe 70 need to be opened to connect the inside and outside of the detection chamber 10; then, clean air needs to be injected into the detection chamber 10 through the first syringe, and the waste gas in the detection chamber 10 needs to be discharged through the outlet pipe 70; during this process, the micro heating element can be heated to ensure that the gas adsorbed in the adsorbent material is completely discharged and there are no residual components in the adsorbent material.

[0045] Detection phase: The gas to be tested is injected into the detection chamber 10 through the second syringe.

[0046] If the concentration of a certain component in the gas to be detected is greater than or equal to the preset concentration threshold of the corresponding micro semiconductor gas sensor 21, the micro semiconductor gas sensor 21 generates an electrical signal and transmits it to the electronic device 40.

[0047] If the concentration of a certain component in the gas to be detected is less than the preset concentration threshold of the corresponding micro-semiconductor gas sensor 21, and the micro-enrichment unit 31 does not generate an electrical signal, the process continues for a period of time while the micro-enrichment unit 31 adsorbs the component. After setting the enrichment time, the valves 90 on the inlet pipe 60 and outlet pipe 70 are closed, and the gas enrichment unit is driven into the gas release state. If the corresponding micro-semiconductor gas sensor 21 still cannot generate an electrical signal, the experiment is repeated, and the set enrichment time is increased until the micro-semiconductor gas sensor 21 can generate an electrical signal after the gas enrichment unit enters the gas release state. It can be understood that the longer the set enrichment time, the lower the concentration of the component in the gas corresponding to the same amplitude electrical signal generated by the micro-semiconductor gas sensor 21.

[0048] It should be noted that the descriptions of each embodiment in the above embodiments have different focuses. For parts that are not described in detail in a certain embodiment, please refer to the relevant descriptions in other embodiments.

[0049] The above embodiments are only used to illustrate the technical solutions of this application, and are not intended to limit them. Although this application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of this application.

[0050] Although preferred embodiments have been described in this specification, those skilled in the art, upon learning the basic inventive concept, can make other changes and modifications to these embodiments. Therefore, the appended claims are intended to be interpreted as including the preferred embodiments as well as all changes and modifications falling within the scope of this specification.

[0051] Obviously, those skilled in the art can make various modifications and variations to this specification without departing from its spirit and scope. Therefore, if such modifications and variations fall within the scope of the claims and their equivalents, this specification is also intended to include such modifications and variations.

Claims

1. A gas detection system, characterized in that, include: The testing chamber is equipped with an air inlet and an air outlet; A gas enrichment chip, which is a microelectromechanical system chip, is located in the detection chamber. The gas enrichment chip includes multiple micro-enrichment units, which are used to adsorb gases in the detection chamber and to release the adsorbed gases back into the detection chamber. A gas detection chip, which is a microelectromechanical system chip, is also located in the detection chamber. The gas detection chip includes multiple miniature semiconductor gas sensors, which have cross-sensitivity and are used together to detect gases in different detection chambers.

2. The gas detection system according to claim 1, characterized in that, The gas detection system also includes a circuit board, which is independently set up from the detection chamber. The micro enrichment unit and the micro semiconductor gas sensor are both electrically connected to the circuit board.

3. The gas detection system according to claim 2, characterized in that, The gas enrichment chip and the gas detection chip are respectively disposed on two opposite inner walls of the detection chamber; a plurality of micro-enrichment unit arrays and a plurality of micro-semiconductor gas sensor arrays are disposed, and the plurality of micro-enrichment units and the plurality of micro-semiconductor gas sensors are disposed correspondingly.

4. The gas detection system according to any one of claims 1-3, characterized in that, The micro-enrichment unit is provided with an adsorption material, which includes, but is not limited to, porous polymer resin based on 2,6-diphenylfuran, activated carbon material, MOF material, and zeolite material; the micro-semiconductor gas sensor is provided with a gas-sensitive material, which includes, but is not limited to, tin dioxide, cobalt oxide, palladium-doped tin dioxide, and palladium-doped tungsten trioxide.

5. The gas detection system according to claim 4, characterized in that, The micro-enrichment unit includes a suspended dielectric film with embedded micro-heating elements and electrothermal driving elements. Under the combined action of the micro-heating elements and electrothermal driving elements, the adsorbent material on the micro-enrichment unit releases the pre-enriched gas.

6. The gas detection system according to claim 5, characterized in that, The total heating power of the micro heating element and the electrothermal drive element is 0.05 to 0.2 W.

7. The gas detection system according to any one of claims 1-3, characterized in that, The volume of the testing chamber is 0.6ml-1.2ml.

8. The gas detection system according to any one of claims 1-3, characterized in that, The gas detection system also includes an inlet pipe, an outlet pipe, a syringe, and two valves; The air inlet pipe connects the syringe and the air inlet, and the air outlet pipe connects the air outlet. Two valves are respectively installed on the air inlet pipe and the air outlet pipe to control the connection or disconnection of the air inlet pipe and the air outlet pipe.

9. The gas detection system according to claim 8, characterized in that, The syringe includes a first syringe and a second syringe, which are detachably connected to the air inlet pipe. The first syringe is used to inject clean air into the detection chamber, and the second syringe is used to inject the gas to be tested into the detection chamber.

10. The gas detection system according to any one of claims 1-3, characterized in that, The gas detection system also includes an electronic device, which is electrically connected to the gas detection chip.

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