Semiconductor laser annealing device and heating component design method

Abstract

The invention relates to a semiconductor laser annealing device and a heating component design method, the semiconductor laser annealing device is used for annealing a semiconductor (101), the semiconductor (101) moves along a preset path so as to form a scanning path on the surface of the semiconductor (101), the semiconductor laser annealing device comprises a heating component (1), the preheating unit is configured to preheat a plurality of heating areas of the semiconductor (101), and the plurality of heating areas extend along the scanning path direction; and the first laser (2) is configured to emit laser to heat an area where a first light spot (10) is located to a first preset temperature, and in the moving process of the semiconductor (101), the first light spot (10) moves along the scanning path to perform scanning heating on the semiconductor (101).

Description

Technical Field

[0001] This disclosure relates to the field of semiconductor processing and manufacturing, and in particular to a semiconductor laser annealing apparatus and a design method for heating components. Background Technology

[0002] Semiconductor laser annealing is a semiconductor processing technology that uses a laser to rapidly heat a target area to a set temperature within a short time, followed by rapid cooling. In laser annealing, a heating plate first heats the wafer to a certain temperature, and then the laser scans it to raise it to the set temperature. This effectively reduces the laser load and wafer breakage rate. However, traditional heating plate resistance wires are distributed in a circular pattern, which results in poor temperature uniformity adjustment, leading to poor semiconductor yield and electrical parameters. Summary of the Invention

[0003] The embodiments of this disclosure provide a semiconductor laser annealing apparatus and a design method for heating components, which can improve the yield and electrical parameters of semiconductors.

[0004] According to one aspect of this disclosure, a semiconductor laser annealing apparatus is provided for annealing a semiconductor, wherein the semiconductor moves along a preset path to form a scanning path on its surface, and the semiconductor laser annealing apparatus includes:

[0005] A heating element is configured to preheat multiple heating regions of a semiconductor, the multiple heating regions extending along the scanning path direction; and

[0006] A first laser is configured to emit laser light to heat the area where a first light spot is located to a first preset temperature. During the movement of the semiconductor, the first light spot moves relative to the semiconductor along a scanning path to scan and heat the semiconductor.

[0007] In some embodiments, the scanning path includes a serpentine scanning path or an arc-shaped scanning path.

[0008] In some embodiments, the multiple heating regions include multiple heating bands that extend along the scanning path direction.

[0009] In some embodiments, the temperature of the multiple heating bands gradually decreases from the start of the scan path to the end of the scan path.

[0010] In some embodiments, a plurality of heating bands are spaced apart along a preset direction, and the temperature of the plurality of heating bands gradually decreases along the preset direction.

[0011] In some embodiments, the heating element is located on the side of the semiconductor away from the first laser.

[0012] In some embodiments, each heating band includes multiple heating points, each of which is configured to heat its area to a second preset temperature, which is lower than a first preset temperature. The heating points heat the corresponding areas to the second preset temperature sequentially from the start point to the end point of the scanning path and then stop heating. The time when the heating points stop heating always precedes the first preset time of the first light spot.

[0013] In some embodiments, the heating component includes a second laser configured to emit laser light to heat the area where the second spot is located to a third preset temperature. The second spot and the first spot are spaced apart by a preset distance. During the movement of the semiconductor, the second spot moves relative to the semiconductor along a scanning path. Multiple heating areas include multiple positions of the second spot in the semiconductor scanning. The second spot always leads the first spot by a preset distance. The third preset temperature is lower than the first preset temperature.

[0014] According to another aspect of this disclosure, a heating component design method is proposed for designing the heating component of the semiconductor laser annealing apparatus of the above embodiments. The heating component design method includes:

[0015] Obtain the linear relationship between the temperature of the heating element and the semiconductor resistance;

[0016] Based on the linear relationship and the upper and lower limits of the original resistance, the upper and lower limits of the original temperature are obtained, and the first difference between the upper and lower limits of the original temperature is calculated.

[0017] Based on the linear relationship and the upper and lower limits of the required resistance, the upper and lower limits of the required temperature are obtained, and the second difference between the upper and lower limits of the required temperature is calculated.

[0018] The number of heating elements is calculated based on the first and second differences.

[0019] Calculate the average resistance value of each heating zone, and calculate and set the temperature of each heating band of the heating element.

[0020] In some embodiments, the number of heating elements is calculated based on a first difference and a second difference: the first difference is divided by the second difference to obtain a quotient, and the number of heating elements is the quotient rounded up to the nearest integer.

[0021] Based on the above technical solution, the semiconductor laser annealing apparatus of this disclosure preheats multiple heating regions of the semiconductor through a heating component, and the multiple heating regions extend along the scanning path direction, which can accurately control the heating regions and heating temperature, and improve the uniformity of the preheating treatment before laser scanning; by adjusting the uniformity of the temperature of the heating regions, it can effectively avoid the stepwise change in resistance caused by the escape of easily diffusing ions, improve the uniformity of semiconductor resistance, optimize semiconductor performance, improve semiconductor yield and electrical parameters, and thus improve the uniformity of semiconductor production batches. Attached Figure Description

[0022] The accompanying drawings, which are included to provide a further understanding of this disclosure and form part of this application, illustrate exemplary embodiments of this disclosure and are used to explain this disclosure, but do not constitute an undue limitation of this disclosure. In the drawings:

[0023] Figure 1 This is a schematic diagram of the first embodiment of the heating component of the semiconductor laser annealing apparatus disclosed herein.

[0024] Figure 2 This is a schematic diagram of the second embodiment of the heating component of the semiconductor laser annealing apparatus disclosed herein.

[0025] Figure 3 This is a schematic diagram of the heating component of the semiconductor laser annealing apparatus disclosed herein.

[0026] Figure 4 This is a schematic diagram of the fourth embodiment of the heating component of the semiconductor laser annealing apparatus disclosed herein.

[0027] Figure 5 This is a schematic diagram of the coordinate distribution of semiconductor resistance values ​​in the prior art.

[0028] Figure 6 This is a schematic diagram showing the coordinate distribution of the semiconductor resistance values ​​in the semiconductor laser annealing apparatus disclosed herein.

[0029] Explanation of reference numerals in the attached figures

[0030] 1. Heating component; 2. First laser; 10. First light spot; 11. Heating belt; 110. Heating point; 12. Second laser; 120. Second light spot; 101. Semiconductor; x. Preset direction. Detailed Implementation

[0031] The present disclosure is described in detail below. In the following paragraphs, different aspects of the embodiments are defined in more detail. The aspects so defined may be combined with any other aspect or aspects unless expressly stated otherwise. In particular, any feature considered preferred or advantageous may be combined with one or more other features considered preferred or advantageous.

[0032] The terms "first" and "second" used in this disclosure are merely for ease of description and to distinguish different components with the same name, and do not indicate a sequential or primary / secondary relationship.

[0033] In the description of this disclosure, it should be understood that the terms "upper," "lower," "inner," or "outer," etc., indicating orientation or positional relationship, are defined based on heating components or semiconductors, etc., and are only for the convenience of describing this disclosure, and are not intended to indicate or imply that the device referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation on the scope of protection of this disclosure.

[0034] During their research, the inventors discovered that current heating plates mostly employ a method of heating with resistance wires distributed in inner and outer rings. Temperature uniformity can be adjusted by setting different temperatures for the inner and outer rings. Alternatively, they use a heating plate with fan-shaped resistance wire distribution, allowing temperature adjustment through multiple fan-shaped areas. However, these technical solutions have limited temperature adjustment capabilities, or their designs are not compatible with laser scanning paths, resulting in poor uniformity.

[0035] Laser annealing mostly employs serpentine or bow-shaped scanning methods. Even though traditional heating plates have temperature regulation capabilities, they cannot adapt to the laser scanning path. Because ion-implanted ions are less prone to diffusion after activation, the heating time for ions in the bottommost and bottommost regions of the wafer is longer than that for ions in the topmost region due to the time required for laser scanning. This results in some easily diffusing ions escaping more readily than in the topmost region, manifesting as a step-like increase in resistance from top to bottom (see...). Figure 5 ).

[0036] To address the aforementioned problems, this disclosure provides a semiconductor laser annealing apparatus for annealing semiconductor 101, such as... Figures 1 to 6 As shown, semiconductor 101 moves along a preset path to form a scanning path on its surface. The semiconductor laser annealing apparatus includes:

[0037] Heating component 1 is configured to preheat multiple heating regions of semiconductor 101, the multiple heating regions extending along the scanning path direction; and

[0038] The first laser 2 is configured to emit laser light to heat the area where the first spot 10 is located to a first preset temperature. During the movement of the semiconductor 101, the first spot 10 moves relative to the semiconductor 101 along the scanning path to scan and heat the semiconductor 101.

[0039] Specifically, by preheating multiple heating regions of the semiconductor 101 using the heating component 1, the load on the first laser 2 and the breakage rate of the semiconductor 101 can be reduced. Specifically, the multiple heating regions extend along the scanning path direction, enabling the formation of a heat treatment base on the semiconductor surface that matches the final laser scanning path.

[0040] Specifically, the first laser 2 emits a laser to heat the area where the first light spot 10 is located to a first preset temperature. The first light spot 10 gradually advances along the scanning path as the semiconductor 101 moves, enabling continuous and precise heating of the semiconductor surface. Optionally, the laser scanning path can completely coincide with the heating area or be parallel to the heating area.

[0041] Optionally, the semiconductor 101 can be a wafer, etc. Optionally, the heating element 1 can be a heating plate, an arc lamp, a laser, etc. Optionally, the first preset temperature can be 900-1300°C, and the heating element 1 can heat the semiconductor 101 to 400-455°C.

[0042] This embodiment uses heating component 1 to preheat multiple heating areas of semiconductor 101, and these multiple heating areas extend along the scanning path direction. This allows for precise control of the heating areas and heating temperatures, improving the uniformity of the preheating process before laser scanning. By adjusting the temperature uniformity of the heating areas, it is possible to effectively avoid stepwise changes in resistance caused by the escape of easily diffusing ions, thereby improving the uniformity of the resistance of semiconductor 101, optimizing semiconductor performance, increasing the yield and electrical parameters of semiconductor 101, and ultimately improving the uniformity of semiconductor production batches.

[0043] In some embodiments, the scan path includes a serpentine scan path or an arc-shaped scan path. Specifically, Figure 1 The heating element shown is suitable for serpentine scanning paths. Figure 2 The heating element shown is suitable for bow-shaped scanning paths.

[0044] This embodiment, by using a serpentine or arc-shaped scanning path, can reduce the overlapping area between adjacent scanning lines, ensure the heating uniformity of the entire semiconductor surface, and reduce thermal stress and potential local overheating problems.

[0045] In some embodiments, such as Figure 1 and Figure 2 As shown, the multiple heating areas include multiple heating bands 11, which extend along the scanning path. Optionally, the heating bands 11 can be implemented by setting resistance wires inside the heating plate, or by setting arc lamps.

[0046] Specifically, the heating band 11 extends along the scanning path. Before laser annealing, the heating band 11 preheats specific areas of the semiconductor, which can reduce the load on the first laser 2 and the breakage rate of the semiconductor 101. Specifically, multiple heating bands 11 can improve the uniformity of preheating, and the independent temperature control of each heating band 11 can realize customized heating temperature settings, improving the targeting of preheating.

[0047] Alternatively, the laser can scan and heat along the heating zone 11 completely, or multiple scanning paths can be set between two adjacent heating zones 11.

[0048] This embodiment, by arranging the heating belt 11 along the scanning path, can ensure the uniformity of preheating before laser scanning, improve annealing efficiency, improve the uniformity of the resistance of semiconductor 101, optimize semiconductor performance, and improve the yield and electrical parameters of semiconductor 101.

[0049] In some embodiments, such as Figures 1 to 3 As shown, the temperature of the multiple heating bands 11 gradually decreases from the start of the scanning path to the end of the scanning path.

[0050] Specifically, along the scanning path, since laser scanning requires a certain amount of time to complete, the preheating time of the endpoint region is longer than that of the starting region. By gradually decreasing the temperature of multiple heating bands 11 from the starting point to the endpoint of the scanning path, the preheating temperature of the endpoint region can be reduced, making the escape degree of easily diffusing ions in the entire semiconductor approximately the same, thereby avoiding a stepwise change in resistance (see...). Figure 6 ).

[0051] Optionally, each heating band 11 may include multiple heating points, and the temperature of each heating point in the heating band 11 may gradually decrease from the starting point to the ending point; alternatively, multiple resistance wires may be arranged from top to bottom, and the set temperature of the multiple resistance wires may decrease sequentially.

[0052] This embodiment reduces the preheating temperature in regions with longer preheating times by gradually decreasing the temperature of multiple heating bands 11 from the start to the end of the scanning path. This makes the easily diffusing ions in the entire semiconductor similar in terms of escape degree, thereby avoiding stepwise changes in resistance.

[0053] In some embodiments, such as Figure 1 and Figure 2 As shown, multiple heating bands 11 are spaced apart along a preset direction x, and the temperature of the multiple heating bands 11 gradually decreases along the preset direction x.

[0054] Specifically, the temperature of the multiple heating bands 11 gradually decreases along a preset direction x. Optionally, the heating bands 11 can be implemented by setting resistance wires. Optionally, one or more tracks can be set between two adjacent heating bands 11.

[0055] This embodiment employs a heating element 1 with a stepped temperature distribution. Taking a top-down scanning method as an example, by combining the stepped reduction of the temperature of the heating element 1 with a special heating band layout shape, it can effectively adjust the temperature uniformity and resistance uniformity, and reduce the problem of stepped resistance increase caused by different heating times for easily diffusing ions such as boron.

[0056] In some embodiments, the heating element 1 is disposed on the side of the semiconductor 101 away from the first laser 2. Optionally, the temperature difference between two adjacent heating bands 11 may be the same or different.

[0057] This embodiment, by arranging the heating component 1 and the first laser 2 on both sides of the semiconductor 101, can reduce the thermal interference that may exist between them and ensure precise control of the laser annealing process.

[0058] In some embodiments, such as Figure 3 As shown, each heating band 11 includes multiple heating points 110. Each heating point 110 is configured to heat its area to a second preset temperature, which is lower than a first preset temperature. The heating points 110 heat the corresponding areas to the second preset temperature sequentially from the start point to the end point of the scanning path and then stop heating. The time when the heating points 110 stop heating always precedes the first preset time of the first light spot 10.

[0059] Specifically, the first preset time is in the millisecond range, and the heating temperatures of multiple heating points 110 and multiple heating bands 11 are the same. Optionally, the heating points can be arc lamps, etc., for example, the heating point 110 instantly heats its area to the second preset temperature. Optionally, the multiple heating points 110 can be set at intervals or adjacent to each other.

[0060] This embodiment employs multiple heating points 110 to sequentially heat the corresponding regions to a second preset temperature along the scanning path from the start to the end of the scanning path. The heating point 110 stops heating at a time that always precedes the first light spot 10 by a first preset time. This ensures that the preheating time and temperature of each preheated region of the semiconductor 101 are the same, thereby avoiding the problem of resistance stepwise increase caused by different heating times for easily diffusing ions.

[0061] In some embodiments, such as Figure 4 As shown, the heating component 1 includes a second laser 12, which is configured to emit laser light to heat the area where the second spot 120 is located to a third preset temperature. The second spot 120 and the first spot 10 are spaced apart by a preset distance. During the movement of the semiconductor 101, the second spot 120 moves relative to the semiconductor 101 along the scanning path. The multiple heating areas include multiple positions of the second spot 120 scanned by the semiconductor 101. The second spot 120 always leads the first spot 10 by a preset distance. The third preset temperature is lower than the first preset temperature.

[0062] Optionally, the second laser 12 can be located on the same side of the semiconductor 101 as the first laser 2, or they can be located on opposite sides of the semiconductor 101. Optionally, the first preset temperature can be 900–1300°C, and the third preset temperature can be 400–455°C.

[0063] In this embodiment, the second light spot 120 heats the corresponding area of ​​the semiconductor 101 to a third preset temperature, and the second light spot 120 always leads the first light spot 10 by a preset distance. This enables the preheating time and preheating temperature of each preheating area of ​​the semiconductor 101 to be the same, thereby avoiding the problem of resistance step-by-step increase caused by the different heating time of easily diffusing ions.

[0064] Secondly, this disclosure proposes a heating component design method for designing the heating component of the semiconductor laser annealing apparatus of the above embodiments. The heating component design method includes:

[0065] Obtain the linear relationship between the temperature of the heating element and the semiconductor resistance;

[0066] Based on the linear relationship and the upper and lower limits of the original resistance, the upper and lower limits of the original temperature are obtained, and the first difference between the upper and lower limits of the original temperature is calculated.

[0067] Based on the linear relationship and the upper and lower limits of the required resistance, the upper and lower limits of the required temperature are obtained, and the second difference between the upper and lower limits of the required temperature is calculated.

[0068] The number of heating bands 11 is calculated based on the first difference and the second difference;

[0069] Calculate the average resistance value of each heating zone, and calculate and set the temperature of each heating band 11 of the heating element 1.

[0070] The heating component design method of this embodiment, by designing a heating component 1 with a stepped temperature distribution, taking the top-down scanning method as an example, can effectively adjust the temperature uniformity and resistance uniformity by combining the stepped reduction of the temperature of the heating component 1 with a special heating band layout shape, and avoid the problem of resistance step increase caused by the different heating time of easily diffusing ions.

[0071] In some embodiments, calculating the number of heating bands 11 based on a first difference and a second difference includes:

[0072] Divide the first difference by the second difference to get the quotient, and round up the quotient to get the number of heating bands 11.

[0073] The heating component design method of this embodiment determines the number of heating bands 11 by calculation, which can ensure that there are enough heating bands 11 to achieve the required temperature distribution, achieve precise temperature control, and improve the yield and electrical parameters of semiconductors. The greater the difference between the first difference and the required second difference in the prior art, the more heating bands 11 are set to make the temperature change more uniform, which can further improve the uniformity of the preheating temperature.

[0074] In some specific embodiments, the heating component 1 is a heating plate, and the heating band 11 is implemented by setting a resistance wire. The design method of the heating component includes:

[0075] Step 1: Obtain the relationship between the heating plate temperature and resistance: Rs = At ​​+ B (A and B are constants, and T is the variable temperature);

[0076] Step 2: Obtain the original resistance distribution map using the traditional top-down scanning method (see...). Figure 5 Substituting these values ​​into the relationship between temperature and resistance, we obtain the original upper and lower temperature limits t1 and t2.

[0077] Step 3: Based on the product requirements, obtain the required upper and lower limits of Rs, and substitute them into the relationship between temperature and resistance to obtain the required upper and lower limits of temperature t3, t4.

[0078] Step 4: Obtain the number of steps in the stepped temperature distribution laser annealing

[0079] Step 5: Using the relationship between heating plate temperature and resistance, calculate the average resistance values ​​of each heating zone as Rs1, Rs2, ..., Rs n ;

[0080] Step Six: Calculate and set the temperature of each resistance wire in the heating plate:

[0081]

[0082]

[0083] Among them, T n It is the set temperature of the resistance wire, T1 is selected according to the temperature and process requirements of the first laser 2.

[0084] The foregoing has provided a detailed description of a semiconductor laser annealing apparatus and a design method for a heating component provided in this disclosure. Specific embodiments have been used to illustrate the principles and implementation methods of this disclosure. The descriptions of these embodiments are merely illustrative and are intended to aid in understanding the method and core concepts of this disclosure. It should be noted that those skilled in the art can make various improvements and modifications to this disclosure without departing from its principles, and these improvements and modifications also fall within the scope of protection of the claims of this disclosure.

Claims

1. A semiconductor laser annealing apparatus, characterized in that, For annealing a semiconductor (101), the semiconductor (101) moves along a predetermined path to form a scanning path on its surface, the semiconductor laser annealing apparatus includes: A heating element (1) is configured to preheat a plurality of heating regions of the semiconductor (101), the plurality of heating regions extending along the scanning path direction; and A first laser (2) is configured to emit a laser to heat the area where the first spot (10) is located to a first preset temperature. During the movement of the semiconductor (101), the first spot (10) moves relative to the semiconductor (101) along the scanning path to scan and heat the semiconductor (101).

2. The semiconductor laser annealing apparatus according to claim 1, characterized in that, The scanning path includes a serpentine scanning path or an arc-shaped scanning path.

3. The semiconductor laser annealing apparatus according to claim 1, characterized in that, The plurality of heating regions include a plurality of heating bands (11) that extend along the scanning path direction.

4. The semiconductor laser annealing apparatus according to claim 3, characterized in that, The temperature of the plurality of heating bands (11) gradually decreases from the beginning of the scanning path to the end of the scanning path.

5. The semiconductor laser annealing apparatus according to claim 4, characterized in that, The plurality of heating bands (11) are spaced apart along a preset direction (x), and the temperature of the plurality of heating bands (11) gradually decreases along the preset direction (x).

6. The semiconductor laser annealing apparatus according to claim 5, characterized in that, The heating element (1) is located on the side of the semiconductor (101) away from the first laser (2).

7. The semiconductor laser annealing apparatus according to claim 3, characterized in that, Each heating band (11) includes multiple heating points (110), and each heating point (110) is configured to heat its area to a second preset temperature, which is lower than the first preset temperature. The heating point (110) heats the corresponding area to the second preset temperature sequentially from the start point to the end point of the scanning path and then stops heating. The heating point (110) stops heating at a time that always precedes the first light spot (10) by a first preset time.

8. The semiconductor laser annealing apparatus according to any one of claims 1 to 7, characterized in that, The heating component (1) includes a second laser (12), which is configured to emit laser light to heat the area where the second spot (120) is located to a third preset temperature. The second spot (120) and the first spot (10) are spaced apart by a preset distance. During the movement of the semiconductor (101), the second spot (120) moves relative to the semiconductor (101) along the scanning path. The plurality of heating areas include the second spot (120) at a plurality of positions scanned by the semiconductor (101). The second spot (120) always leads the first spot (10) by a preset distance. The third preset temperature is lower than the first preset temperature.

9. A design method for a heating component, characterized in that, A heating component for designing the semiconductor laser annealing apparatus of claim 6, the heating component design method comprising: Obtain the linear relationship between the temperature of the heating element and the semiconductor resistance; Based on the linear relationship and the upper and lower limits of the original resistance, the upper and lower limits of the original temperature are obtained, and the first difference between the upper and lower limits of the original temperature is calculated. Based on the linear relationship and the upper and lower limits of the required resistance, the upper and lower limits of the required temperature are obtained, and the second difference between the upper and lower limits of the required temperature is calculated. The number of heating bands (11) is calculated based on the first difference and the second difference; Calculate the average resistance value corresponding to each heating zone, and calculate and set the temperature of each heating band (11) of the heating component (1).

10. The heating component design method according to claim 9, characterized in that, The number of heating bands (11) is calculated based on the first difference and the second difference: Divide the first difference by the second difference to obtain a quotient value, and make the number of heating bands (11) the integer part of the quotient value.

Images