Packaging structure and manufacturing method thereof

Abstract

The invention provides a packaging structure and a manufacturing method thereof, and the manufacturing method comprises the following steps: a plurality of base layers are provided, each base layer comprises an electrical connection layer and a supporting layer located below the electrical connection layer, and the plurality of base layers comprise a first base layer and a second base layer; the face, provided with the electrical connection layer, of the second base layer is opposite to the face, provided with the electrical connection layer, of the first base layer; an electrical connection layer connecting the electrical connection layer of the second base layer and the first base layer; the support layer of the second base layer is removed to transfer the electrical connection layer of the second base layer onto the first base layer. According to the manufacturing method, multiple layers of electrical connection layers in a traditional multi-layer RDL structure are split and connected, and on the premise of the multi-layer RDL structure, repeated high-temperature baking of part of dielectric layers in the RDL layer is avoided, so that the working performance stability and reliability of the whole packaging structure are improved, and meanwhile the advanced packaging requirements of higher density and more layers are met. The working stability and reliability of the packaging structure are improved.

Description

TECHNICAL FIELD

[0001] The present application belongs to the field of semiconductor packaging structure and manufacturing, and relates to a packaging structure and a manufacturing method thereof. BACKGROUND

[0002] Chiplet technology is a new advanced packaging method developed by the semiconductor industry to continuously improve the integration and performance of chips in the face of the challenge of the slowing down of Moore's Law. By dividing a complex system-on-chip into multiple smaller and function-specific modules or chiplets according to IP functions, these chiplets can be independently manufactured based on their own characteristics to select the most suitable process to optimize cost and update performance. Then, chiplets performing different functions such as storage and processing are packaged to improve design flexibility and scalability.

[0003] In order to meet the requirements of high-bandwidth and high-performance for high-performance computing, advanced packaging technologies with high density and large bandwidth (such as ultra-high density fan-out packaging technology, 2.5D and 3D packaging technology, etc.) need to be developed to connect different chiplets. As one of the key technologies in advanced packaging technology, the multi-layer redistribution layer (RDL) is used to redistribute and connect the input / output (I / O) ports on the chip between different layers to achieve more complex interconnection and higher integration under the requirement of high-density line width and line spacing.

[0004] With the development of packaging technology, the increase in the number of RDL layers can provide higher interconnection density, thereby supporting more functional integration, smaller packaging size, and also improving signal transmission quality to reduce loss in signal transmission and improve the performance of the overall packaging structure. However, it is found in actual applications that the working stability and reliability of packaging structures with multiple RDL layers are usually lower than expected.

[0005] Therefore, how to provide a packaging structure and a manufacturing method thereof to improve the working stability and reliability of packaging structures with multiple RDL layers has become an important technical problem to be solved by those skilled in the art.

[0006] It should be noted that the above introduction to the technical background is only to facilitate a clear and complete description of the technical solutions of the present application, and to facilitate the understanding of those skilled in the art. The above technical solutions cannot be considered as known to those skilled in the art merely because they are described in the background section of the present application. SUMMARY

[0007] In view of the above-mentioned defects of the prior art, the purpose of the present application is to provide a packaging structure and a manufacturing method thereof, which are used to solve the problem that the working stability and reliability of the packaging structure with multiple RDLs in the prior art need to be improved.

[0008] To achieve the above-mentioned purpose and other related purposes, the present application provides a manufacturing method of a packaging structure, comprising the following steps:

[0009] providing multiple base layers, the base layers comprising an electrical connection layer and a support layer, the support layer being located below the electrical connection layer, and the multiple base layers comprising a first base layer and a second base layer;

[0010] arranging the side of the second base layer provided with the electrical connection layer to face the side of the first base layer provided with the electrical connection layer;

[0011] connecting the electrical connection layer of the second base layer with the electrical connection layer of the first base layer;

[0012] removing the support layer of the second base layer to transfer the electrical connection layer of the second base layer to the first base layer.

[0013] Optionally, the method of connecting the electrical connection layer of the second base layer with the electrical connection layer of the first base layer comprises at least one of a hybrid bonding method and a thermal compression bonding method.

[0014] Optionally, the base layer further comprises a release layer, which is located between the support layer and the electrical connection layer.

[0015] Optionally, the method of removing the support layer of the second base layer comprises laser debonding based on the release layer of the second base layer to separate the support layer of the second base layer from the electrical connection layer of the second base layer.

[0016] Optionally, the base layer further comprises a protective layer, which is located between the release layer and the electrical connection layer.

[0017] Optionally, the multiple base layers further comprise an i-th base layer, i being an integer greater than 2, and the manufacturing method further comprises the following steps:

[0018] arranging the i-th base layer above the first base layer so that the side of the i-th base layer provided with the electrical connection layer faces the side of the first base layer provided with the electrical connection layer;

[0019] connecting the electrical connection layer of the i-th base layer with the electrical connection layer of the i-1-th base layer transferred above the first base layer;

[0020] removing the support layer of the i-th base layer to transfer the i-th base layer electrically connecting layer to above the first base layer, the electrically connecting layers of the first base layer, the second base layer and the i-th base layer are sequentially stacked and connected to form a rewiring layer.

[0021] Optionally, the electrically connecting layer comprises at least one of a single-layer structure and a multi-layer structure.

[0022] Optionally, when the electrically connecting layer is a multi-layer structure, the method for forming the base layer comprises the following steps:

[0023] providing a support layer;

[0024] sequentially forming n initial electrically connecting layers above the support layer, the n initial electrically connecting layers are sequentially stacked from bottom to top to form the electrically connecting layer, 1 < n < 6.

[0025] Optionally, when the electrically connecting layer is a multi-layer structure, the method for forming the base layer comprises the following steps:

[0026] providing at least two initial layers, the initial layers comprising an initial electrically connecting layer and an initial support layer below the initial electrically connecting layer;

[0027] arranging the two initial layers with the initial electrically connecting layers facing each other;

[0028] connecting the two initial electrically connecting layers and removing one of the initial support layers.

[0029] The application further provides a packaging structure obtained by the method, the packaging structure comprising a rewiring layer, the rewiring layer comprising at least two electrically connecting layers, the two electrically connecting layers being connected to each other.

[0030] As described above, the method for manufacturing the packaging structure of the application avoids repeated high-temperature baking of part of the dielectric layers in the RDL layer by splitting and connecting the multi-layer electrically connecting layers in the traditional multi-layer RDL structure, thereby improving the working performance stability and reliability of the overall packaging structure by ensuring the stability and reliability of the dielectric layer structure, and easily breaking through the upper limit of the number of RDL layers to meet the increasing demand for advanced packaging with higher density and more layers. The packaging structure of the application has improved working performance stability and reliability compared to existing packaging structures with multi-layer RDL, and the manufacturing process is simple and suitable for large-scale production with low cost and high efficiency. BRIEF DESCRIPTION OF DRAWINGS

[0031] Figure 1A step flow chart showing the method of fabricating the package structure of the present application.

[0032] Figure 2 A cross-sectional view showing a base layer in the method of fabricating the package structure of the present application.

[0033] Figure 3 A cross-sectional view showing another base layer in the method of fabricating the package structure of the present application.

[0034] Figure 4 A cross-sectional view showing the structure after step S2 in the method of fabricating the package structure of the present application.

[0035] Figure 5 A cross-sectional view showing the structure after step S3 in the method of fabricating the package structure of the present application.

[0036] Figure 6 A cross-sectional view showing the structure after step S4 in the method of fabricating the package structure of the present application.

[0037] Figure 7 A cross-sectional view showing the structure after the i-th base layer is disposed above the first base layer in the method of fabricating the package structure of the present application.

[0038] Figure 8 A cross-sectional view showing the structure after the support layer of the i-th base layer is removed in the method of fabricating the package structure of the present application.

[0039] Figure 9 A cross-sectional view showing the redistribution layer in the package structure of the present application.

[0040] Figure 10 A cross-sectional view showing the package structure of the present application.

[0041] BRIEF DESCRIPTION OF DRAWINGS

[0042] 10 base layer

[0043] 10a first base layer

[0044] 10b second base layer

[0045] 10c i-th base layer

[0046] 11 electrically connecting layer

[0047] 11a, 11b sub-electrically connecting layer

[0048] 111 dielectric layer

[0049] 112 electrically connecting unit

[0050] 12 support layer

[0051] 13 release layer

[0052] 14 protection layer

[0053] 100 redistribution layer

[0054] 200 functional chip

[0055] 300 plastic encapsulation layer

[0056] 400 packaging substrate

[0057] S1-S4 steps DETAILED DESCRIPTION

[0058] The present application is herein described, by way of example only, with the application can be implemented or applied in other different embodiments, and the details thereof can be varied as desired, without departing from the spirit of the present application.

[0059] Reference will now be made to the drawings, wherein Figures 1 to 10 It is to be understood that the drawings are to be used only for purposes of illustration and that they are not to be used to construe the present application in a limited way. The drawings are not to be construed as limiting the spirit and scope of the present application.

[0060] After analyzing and verifying the problems mentioned in the background section, it is found that one of the important reasons for the above problems is that the current multi-layer RDL is made by repeatedly stacking, that is, repeatedly coating the medium layer, exposing, developing and high-temperature (e.g., 260°C) baking the medium layer (e.g., organic PI layer) to form a stacked RDL. With the increase of the number of RDL layers, the number of repeated baking of the first layer of medium layer also increases. For example, during the process of making a 6-layer RDL, the first layer of medium layer needs to be baked at least 5 times when the second to sixth layers of RDL medium layer are baked at high temperature in addition to the active high-temperature baking when the first layer of RDL is made. Correspondingly, the second layer of medium layer also needs to be baked at least 5 times. In repeated high-temperature baking, the medium layer material is heat aged due to long-term high-temperature process conditions, and its thermal stability is reduced due to repeated thermal cycling, which greatly increases the probability of heat aging, deformation and cracking. In addition to the possibility of damaging the insulation performance between layers, increasing the risk of short circuit or electric leakage and affecting the stability of the working performance, it also affects the long-term reliability and durability. In addition, due to the mismatch of the coefficient of thermal expansion (CTE) between the metal layer embedded in part of the medium layer and the metal layer, the risk and degree of RDL warping are increased, which affects the precision and yield of the packaging structure, and even affects the mechanical stability of the packaging structure due to the mismatch of the coefficient of thermal expansion between the packaging substrate and the chip inside the packaging structure during subsequent use.

[0061] Based on the analysis and multiple verifications of the above reasons, the present application proposes the following technical solutions to improve and enhance the overall working performance stability and reliability of the packaging structure from the perspective of avoiding repeated baking of the medium layer in the RDL.

[0062] Embodiment one

[0063] The present embodiment provides a method for making a packaging structure, please refer to Figure 1 , which is shown as a step flow chart of the method for making, including the following steps:

[0064] S1: providing a plurality of base layers, the base layer including an electrical connection layer and a support layer, the support layer being located below the electrical connection layer, the plurality of base layers including a first base layer and a second base layer;

[0065] S2: the second base layer is provided with an electrical connection layer, and the first base layer is provided with an electrical connection layer.

[0066] S3: connecting the electrical connection layer of the second base layer and the electrical connection layer of the first base layer.

[0067] S4: removing the support layer of the second base layer to transfer the electrical connection layer of the second base layer to the first base layer.

[0068] First, refer to Figure 2 and Figure 3 , respectively, show two basic layer structures, perform step S1 to provide a plurality of basic layers 10, which include an electrical connection layer 11 and a support layer 12 located below the electrical connection layer 11, a plurality of basic layers 10 including a first basic layer 10a and a second basic layer 10b (see Figure 4 ), that is, a plurality of basic layers 10 including at least a first basic layer 10a and a second basic layer 10b, and possibly including a third basic layer, …, an i-1 basic layer, an i basic layer 10c, etc. according to actual needs, each basic layer has the same overall structure, including an electrical connection layer and a support layer, based on high-density electrical interconnection and different between interconnection objects, some details of which may be different, such as the thickness of the electrical connection layer, the specific structure of the internal electrical connection unit (i.e. wiring method), the number of layers, etc. Details such as the thickness of the electrical connection layer, the specific structure of the internal electrical connection unit (i.e. wiring method), the number of layers, etc.

[0069] As an example, as shown in Figure 2 , the electrical connection layer 11 includes a dielectric layer 111 and an electrical connection unit 112 embedded in the dielectric layer 111, and after subsequent multi-layer stacking connection, the electrical connection units 112 in different electrical connection layers 11 are connected to each other to realize the transmission of electrical signals. The dielectric layer 111 includes an organic material such as PI. It should be noted that Figure 2 The structure shown is only an example to illustrate that the specific structure of the electrical connection unit is not necessarily the same as Figure 2 .

[0070] As an example, the support layer 12 includes at least one of a glass substrate, a silicon substrate, a ceramic substrate, and an organic substrate. In this embodiment, a glass substrate is used, which has the advantages of low cost, high strength, strong chemical and thermal stability, etc., and meets the repeated recycling needs, with negligible impact on the production cost of the packaging structure.

[0071] As an example, as shown in Figure 2 , the basic layer 10 further includes a release layer 13 located between the support layer 12 and the electrical connection layer 11. The release layer serves as an intermediate layer between the support layer and the electrical connection layer to facilitate subsequent separation of the two without damaging the electrical connection layer and support layer structure, which not only ensures the structure of the electrical connection layer is not affected, but also ensures the structural integrity of the support layer to achieve repeated use and reduce production costs.

[0072] As an example, as shown in Figure 2As shown, the base layer 10 further comprises a protective layer 14 between the release layer 13 and the electrical connection layer 11. Since the electrical connection layer is made above the release layer, the protective layer can prevent the release layer from being damaged or destroyed during the production of the electrical connection layer (e.g. being passively subjected to unnecessary etching and glue corrosion) and avoid the subsequent failure of the support layer release.

[0073] Further, the material of the protective layer comprises at least one of organic insulating material and inorganic insulating material, such as PI, and the thickness of the protective layer ranges from 1 to 10 μm, including but not limited to 4 μm, 6 μm and 8 μm. It should be noted that in the case of the protective layer, it is necessary to ensure that the protective layer can also be removed synchronously during the subsequent support layer release to avoid the influence of its residue on the complete transmission of the electrical signal between the adjacent two electrical connection layers and the overall structure flatness. Therefore, the material of the protective layer is preferably PI, and the thickness of the protective layer is preferably 2 to 5 μm, which can simultaneously satisfy the good protection of the release layer and the smooth release of the support layer.

[0074] Please refer to Figure 4 , step S2 is performed to arrange the side of the second base layer 10b provided with the electrical connection layer 11 opposite to the side of the first base layer 10a provided with the electrical connection layer 11. In the embodiment, the second base layer is inverted above the first base layer to arrange the electrical connection layers of the two layers opposite to each other. In actual application, other suitable arrangement modes can also be adopted under the premise of ensuring the opposite arrangement of the two layers to realize the subsequent connection, such as horizontally placing the two layers opposite to each other.

[0075] Please refer to Figure 5 , step S3 is performed to connect the electrical connection layer 11 of the second base layer 10b with the electrical connection layer 11 of the first base layer 10a.

[0076] As an example, the method for connecting the electrical connection layer 11 of the second base layer 10b with the electrical connection layer 11 of the first base layer 10a comprises at least one of hybrid bonding and thermal compression bonding.

[0077] Please refer to Figure 6 , step S4 is performed to remove the support layer 12 of the second base layer 10b to transfer the electrical connection layer 11 of the second base layer 10b to the first base layer 10a.

[0078] As an example, the method for removing the support layer 12 of the second base layer 10b includes laser debonding based on the release layer 13 of the second base layer 10b (or the release layer 13 and the protective layer 14 if the protective layer 14 is provided) to separate the support layer 12 of the second base layer 10b from the electrical connection layer 11 of the second base layer 10b. Specifically, the laser debonding is performed by applying a laser beam to the release layer to soften the release layer and make it fall off from the electrical connection layer, thereby removing the support layer. The laser debonding is selected for the following reasons: it has high accuracy and controllability, and can be performed at room temperature without causing negative effects on the electrical connection layer and other structural layers. Although thermal debonding, chemical debonding, thermal slip debonding, and mechanical peeling can also achieve the purpose of removing the support layer, the electrical connection layer has a dielectric layer, and the dielectric layer is prone to warping and reliability problems when subjected to high-temperature process environment multiple times. Therefore, the methods requiring high-temperature conditions are not very suitable for removing the top support layer of the present embodiment. The mechanical peeling and chemical debonding methods are prone to cause damage or destruction to the electrical connection layer and other structures. Therefore, the laser debonding method is preferred in the present embodiment.

[0079] As an example, please refer to Figures 7 to 9 The manufacturing method further includes the following steps:

[0080] As shown in Figure 7 The i-th base layer 10c is arranged above the first base layer 10a such that the side of the i-th base layer 10c provided with the electrical connection layer 11 faces the side of the first base layer 10a provided with the electrical connection layer 11 (i.e., the electrical connection layer 11 of the i-th base layer 10c is arranged opposite to the electrical connection layer 11 of the (i-1)-th base layer 10 transferred above the first base layer 10a);

[0081] As shown in Figure 8 The electrical connection layer 11 of the i-th base layer 10c is connected to the electrical connection layer 11 of the (i-1)-th base layer 10 transferred above the first base layer 10a;

[0082] As shown in Figure 9As shown, the support layer 12 of the i-th base layer 10c is removed to transfer the electrical connection layer 11 of the i-th base layer 10c above the first base layer 10a, and the electrical connection layers 11 of the first base layer 10a, the second base layer 10b, and the i-th base layer 10c are sequentially stacked and connected to form the rewiring layer 100. That is, the electrical connection layers of two base layers are first oppositely arranged and connected to transfer the electrical connection layer of one base layer above the other base layer to obtain a support layer-two-layer electrical connection layer structure, and then the electrical connection layer of a third base layer is arranged and connected toward the structure with two-layer electrical connection layers to obtain a support layer-three-layer electrical connection layer, and so on to finally obtain a support layer-i-layer electrical connection layer structure, and then the support layer is removed to obtain a multi-layer rewiring layer, and the number of layers of the multi-layer rewiring layer is i (i.e. the rewiring layer is composed of i layers of electrical connection layers including the electrical connection layer of the first base layer, the electrical connection layer of the second base layer, the electrical connection layer of the i-1-th base layer, and the electrical connection layer of the i-th base layer). In this embodiment, the method of connecting each electrical connection layer and the method of removing each support layer are preferably the same to ensure process stability. In addition, it should be noted that when the i-th base layer is included in the plurality of base layers, the i-1-th base layer is also included, when i is 3, the i-1-th base layer is the second base layer, when i is 4, the i-1-th base layer is the third base layer, and so on.

[0083] As an example, the electrical connection layer 11 includes a single-layer structure (such as Figure 2 a multi-layer structure (such as Figure 3As shown, the electrical connection layer 11 includes at least one of two sub-electrical connection layers 11a / 11b. The electrical connection layers of the plurality of base layers are the same, or partially the same and partially different, or all different. For example, the electrical connection layer of the first base layer is a single-layer structure, and the electrical connection layer of the second base layer is a multi-layer structure. If the electrical connection layers of the plurality of base layers are all single-layer structures, and the number of layers of the electrical connection layer in the target redistribution layer is relatively large (for example, m layers), it is equivalent to providing at least m base layers, and sequentially stacking and connecting the electrical connection layers of each base layer, and removing the support layer of each base layer after transferring the electrical connection layer of each base layer to the structure of the stacked and connected part. In this way, each electrical connection layer only needs to be subjected to a high-temperature baking process once, and will not be warped and deformed and the reliability will be weakened due to repeated high-temperature baking. The overall structural stability and reliability of the packaging structure are effectively guaranteed. However, this will face a problem, that is, it will greatly prolong the overall process time of the packaging structure and affect the production efficiency. If the electrical connection layers of the plurality of base layers are all multi-layer structures, the plurality of base layers are synchronously and parallelly manufactured through the manufacturing process and production plan arrangement of the electrical connection layers in the base layers, and then the plurality of electrical connection layers are stacked and connected. Compared with the former, the manufacturing time can be effectively shortened to improve the work efficiency.

[0084] In an example, when the electrical connection layer 11 of the base layer 10 is a multi-layer structure, the method for forming the base layer 10 includes the following steps: providing a support layer; sequentially forming n initial electrical connection layers (not shown in the figure, please refer to 11a or 11b in FIG. 1 for understanding) above the support layer, and the n initial electrical connection layers are sequentially stacked from bottom to top to constitute the electrical connection layer, 1 Figure 3

[0085] ​Further, forming the n initial electrically connecting layers includes the following steps: coating a sub-medium layer on the support layer; forming a photoresist layer on the sub-medium layer; patterning the photoresist layer to form etching windows; etching the sub-medium layer with the patterned photoresist layer as a mask to form openings; forming a conductive material layer in the sub-medium layer, the conductive material layer also filling into the openings; planarizing the conductive material layer to only keep the part filled into the openings as an electrically connecting structure (by this time, an initial electrically connecting layer is made, and the obtained overall structure can be regarded as a base layer when the electrically connecting layer is a single-layer structure); repeating the above steps n times to obtain the electrically connecting layer composed of n initial electrically connecting layers. The reason for setting the value of n in the above interval is that, according to production and research experience, the current redistribution layer is made by repeating the steps of coating a medium material, exposing and developing, and high-temperature baking to solidify the medium material to form a medium layer, and then filling an electrically connecting unit, which is similar to the above initial electrically connecting layer. Therefore, with each additional electrically connecting layer, the medium layer of the bottom layer is repeatedly baked for one layer. With the increase of the number of electrically connecting layers, the number of times of baking the medium layer at the bottom increases, which affects the reliability of the medium layer. In addition, under the condition of repeated high-temperature processes, the thermal expansion effect of the finally made redistribution layer increases, and the degree of warping deformation increases. Based on the current process conditions, the number of 6 layers is close to the limit of the structure and stability of the redistribution layer. Through verification, considering the production efficiency, production cost and reliability factors, n is preferably 2 to 3 layers. At this time, the structure of the medium layer in the electrically connecting layer is not baked enough to seriously affect the structure and performance stability, and the slight loss of reliability and the degree of warping are controllable.

[0086] In another example, when the electrically connecting layer 11 of the base layer 10 is a multi-layer structure, the method for forming the base layer 10 includes the following steps: providing at least two initial layers (which can be combined with the above steps for forming the initial electrically connecting layer); repeating the above steps n times to obtain the electrically connecting layer composed of n initial electrically connecting layers. Figure 2The initial layers include an initial electrically connecting layer and an initial supporting layer below the initial electrically connecting layer; the two initial layers are arranged with the initial electrically connecting layer of each facing the other; the two initial electrically connecting layers are connected, and one of the initial supporting layers is removed. This method is similar to grouping the initial layers (the number of initial layers in each group can be the same or different to adjust the specific structure of the redistribution layer and the production plan according to actual needs), stacking and connecting the initial electrically connecting layers of the initial layers in each group in turn, and removing the initial supporting layer in the initial layer corresponding to the initial electrically connecting layer when connecting each initial electrically connecting layer, so as to transfer the initial electrically connecting layer to the stacked part of the initial electrically connecting layer (for example, the method of stacking and connecting the electrically connecting layers of two base layers and then stacking a third base layer above the structure with two electrically connecting layers). In this way, the medium layer in each electrically connecting layer of the final packaging structure is subjected to baking for only one time, thereby guaranteeing the reliability and stability of the medium layer to the greatest extent, and the connection of the multiple groups of initial electrically connecting layers is performed synchronously, thereby improving the production efficiency.

[0087] As an example, please refer to Figure 10 After the redistribution layer 100 is formed, the method further includes the following steps: providing a functional chip 200; connecting the functional chip 200 above the redistribution layer 100 to form a functional module; and connecting the functional module to a packaging substrate 400, wherein the redistribution layer 100 serves as an intermediate layer electrically connecting the functional chip 200 and the packaging substrate 400.

[0088] Further, the method further includes the step of forming a plastic encapsulation layer 300, which encapsulates the functional chip 200 to achieve insulation and protection.

[0089] As an example, the functional chip 200 includes at least one of a CPU, a GPU, and a DRAM, or further includes other suitable functional chips.

[0090] As an example, the connection mode between the functional chip 200 and the redistribution layer 100 and the connection mode between the functional module and the packaging substrate 400 both include Flipchip (i.e., conductive bumps are arranged on the connection surface of the functional chip 200 and the connection surface of the functional module), and further, the side of the packaging substrate away from the functional module is also provided with conductive bumps to be electrically connected to an external structure.

[0091] The manufacturing method of the packaging structure of the embodiment splits and connects the multi-layer electrically connecting layers in the traditional multi-layer RDL structure, i.e. provides a plurality of base layers with electrically connecting layers (one or fewer layers of electrically connecting layers are manufactured on each support layer, which can ensure the performance of the electrically connecting layers without significantly increasing the process difficulty), and then connects the electrically connecting layers of each base layer. On the premise of manufacturing multi-layer RDL, it avoids repeatedly baking part of the dielectric layers in the RDL layer through high temperature, improves the working performance stability and reliability of the overall packaging structure by ensuring the stability and reliability of the dielectric layer structure, and can easily break through the upper limit of the number of RDL layers (the upper limit of the number of RDL layers in the traditional method is 6 layers, and the warping degree and reliability of RDL cannot meet the actual application after more than 6 layers), meet the increasing demand for higher density and more layers of advanced packaging.

[0092] Embodiment two

[0093] The embodiment provides a packaging structure, which is obtained by the manufacturing method in embodiment one or other suitable similar method, please refer to Figure 10 , which shows a cross-sectional schematic view of the packaging structure, which includes a redistribution layer 100, please refer to Figure 9 , the redistribution layer 100 includes at least two electrically connecting layers 11, and the two electrically connecting layers 11 are connected to each other.

[0094] As an example, the number of layers of the redistribution layer 100 is preferably greater than or equal to 6 layers (i.e. the number of electrically connecting layers it includes is greater than or equal to 6), and the specific number of layers is reasonably set based on actual needs, which can be 8 layers, 10 layers, 12 layers, etc. Of course, from the perspective of ensuring the structural stability and reliability of the dielectric layer in the redistribution layer to the greatest extent, the redistribution layer can also be less than 6 layers.

[0095] As an example, the packaging structure further includes a functional chip 200, a plastic encapsulation layer 300 and a packaging substrate 400, the functional chip 200 is connected to the redistribution layer 100 to form a functional module, the plastic encapsulation layer 300 encapsulates the functional chip 200, the functional module is connected above the packaging substrate 400, the functional chip 200 is electrically connected to the packaging substrate 400 based on the redistribution layer 100, and each connection mode includes Flipchip.

[0096] The packaging structure of the embodiment, since it is obtained by the method in embodiment one or similar method, compared with the existing packaging structure with multi-layer RDL, the working performance stability and reliability are improved and enhanced, and the manufacturing process is simple, which is suitable for low-cost and high-efficiency mass production.

[0097] In summary, the packaging structure manufacturing method of the present application, by splitting the multi-layer electrically connecting layer in the traditional multi-layer RDL structure, under the premise of manufacturing multi-layer RDL, avoids part of the medium layer in the RDL layer through repeated high-temperature baking, improves the working performance stability and reliability of the overall packaging structure by ensuring the stability and reliability of the medium layer structure, and can easily break through the upper limit of the current RDL layer number, meet the growing demand for higher density and more layers of advanced packaging. The packaging structure of the present application has improved and improved the working performance stability and reliability compared with the existing packaging structure with multi-layer RDL, and the manufacturing process is simple, suitable for low-cost and high-efficiency mass production. Therefore, the present application effectively overcomes the shortcomings of the prior art and has high industrial utilization value.

[0098] The above embodiments only exemplarily illustrate the principles and effects of the present application, and are not used to limit the present application. Any person skilled in the art can modify or change the above embodiments without departing from the spirit and scope of the present application. Therefore, all equivalent modifications or changes completed by those skilled in the art without departing from the spirit and technical idea disclosed by the present application should be covered by the claims of the present application.

Claims

1. A method for manufacturing an encapsulation structure, characterized in that, The method comprises the following steps: providing a plurality of base layers, the base layers comprising an electrical connection layer and a support layer, the support layer being located below the electrical connection layer, the plurality of base layers comprising a first base layer and a second base layer; arranging the second base layer with the electrical connection layer on one side thereof to face the first base layer with the electrical connection layer on one side thereof; connecting the electrical connection layer of the second base layer to the electrical connection layer of the first base layer; removing the support layer of the second base layer to transfer the electrical connection layer of the second base layer to the first base layer.

2. The method of claim 1, wherein: The method for connecting the electrical connection layer of the second base layer to the electrical connection layer of the first base layer comprises at least one of a hybrid bonding method and a hot-press bonding method.

3. The method of claim 1, wherein: The base layer further comprises a release layer, the release layer being located between the support layer and the electrical connection layer.

4. The method of claim 3, wherein: The method for removing the support layer of the second base layer comprises laser debonding based on the release layer of the second base layer to separate the support layer of the second base layer from the electrical connection layer of the second base layer.

5. The method of claim 3, wherein: The base layer further comprises a protective layer, the protective layer being located between the release layer and the electrical connection layer.

6. The method of claim 1, wherein The plurality of base layers further comprises an i-th base layer, i being an integer greater than 2, and the manufacturing method further comprises the following steps: arranging the i-th base layer above the first base layer such that one side of the i-th base layer with the electrical connection layer faces one side of the first base layer with the electrical connection layer; connecting the electrical connection layer of the i-th base layer to the electrical connection layer of an i-1-th base layer transferred above the first base layer; removing the support layer of the i-th base layer to transfer the electrical connection layer of the i-th base layer above the first base layer, the electrical connection layer of the first base layer, the electrical connection layer of the second base layer, and the electrical connection layer of the i-th base layer being sequentially stacked and connected to form a redistribution layer.

7. The method of claim 1, wherein: The electrical connection layer comprises at least one of a single-layer structure and a multi-layer structure.

8. The method of claim 7, wherein When the electrical connection layer is a multi-layer structure, the method for forming the base layer comprises the following steps: providing a support layer; sequentially forming n initial electrical connection layers above the support layer, the n initial electrical connection layers being sequentially stacked from bottom to top to form the electrical connection layer, 1 9. The method of claim 7, wherein When the electrical connection layer is a multi-layer structure, the method for forming the base layer comprises the following steps: providing at least two initial layers, the initial layers comprising an initial electrical connection layer and an initial support layer located below the initial electrical connection layer; arranging the two initial layers with the initial electrical connection layer on one side thereof to face each other; connecting the two initial electrical connection layers and removing one of the initial support layers.

10. A package structure, characterized by: The packaging structure is obtained by the manufacturing method according to any one of claims 1-9, and the packaging structure comprises a redistribution layer, the redistribution layer comprising at least two electrical connection layers, the two electrical connection layers being connected to each other.

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