Wafer calibration mechanism and calibration method for scribing machine, scribing machine and processor

Abstract

The invention relates to the technical field of wafer scribing, and provides a wafer calibration mechanism and calibration method for a scribing machine, the scribing machine and a processor. The wafer calibration mechanism comprises a base and a rotating mechanism; the rotating mechanism comprises a rotating part and a calibration assembly, the calibration assembly comprises a plurality of calibration units capable of synchronously moving in the radial direction of the rotating part, the side, facing the circle center of the rotating part, of each calibration unit is provided with a curved surface structure used for being matched with the edge of the wafer, and the side, facing the circle center of the rotating part, of each calibration unit is arranged to be of a curved surface structure. The curved surface structure has a certain radian so as to be matched with the edge of the wafer, so that the radian design of the curved surface structure compensates for the difference between the radius of a wafer warping area and the radius of a normal flat wafer. The wafer is adjusted to the preset position of the rotating part through the guidance of the curved surface structure, so that the subsequent notch opening alignment of the wafer and the precision of other processing technologies can be improved.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of wafer dicing, and in particular to a wafer calibration mechanism and calibration method for a dicing machine, a dicing machine and a processor. BACKGROUND

[0002] In the semiconductor wafer dicing process, the wafer can be subjected to the dicing process only after being carried to the worktable by the mechanical carrying arm. Since the warping degree is too large to completely adhere to the worktable, the adsorption vacuum is insufficient, so that the notch positioning cannot be performed, thereby affecting the cutting precision of the subsequent wafer dicing.

[0003] The calibration method commonly used in the current dicing machine is to use three-point conical surfaces for calibration, so that the wafer warping problem can be ignored, so that the center of the wafer can be positioned more accurately. The three-point positioning first clamps and rotates the wafer, and then uses a camera to position the notch of the wafer. However, the current three-point positioning method has a wafer eccentricity problem in the clamping process for a large-warping wafer, thereby affecting the subsequent notch positioning accuracy. SUMMARY

[0004] The present application provides a wafer calibration mechanism and calibration method for a dicing machine, a dicing machine and a processor to solve the problem that the existing semiconductor processing equipment cannot accurately position the notch for a warped wafer.

[0005] In a first aspect, the present application provides a wafer calibration mechanism for a dicing machine, comprising a base and a rotating mechanism rotatably arranged on the base. The rotating mechanism comprises a rotating component for placing a wafer and a calibration assembly arranged along the circumference of the rotating component, comprising a plurality of calibration units that can move radially synchronously along the rotating component. The calibration unit is provided with a curved surface structure on the side facing the center of the rotating component for cooperating with the edge of the wafer. During the synchronous movement of the plurality of calibration units, the wafer is adjusted to the predetermined position of the rotating component through the guidance of the curved surface structure.

[0006] Optionally, the curved surface structure comprises at least a plurality of continuously distributed curved surface segments. The radius of the wafer is R, and the radius of the arc surface corresponding to the lowermost curved surface segment of the plurality of curved surface segments is R. The radii of the arc surfaces corresponding to the remaining plurality of curved surface segments decrease in turn from bottom to top.

[0007] Optionally, the radii of the arc surfaces corresponding to the remaining plurality of curved surface segments decrease in turn from bottom to top according to a geometric progression. Optionally, the number of curved surface segments is not more than four.

[0008] Optionally, the radius of the wafer is R, the diameter of the fitted circle is D, and the angle of the edge position of the wafer along the fitted circle relative to the center of the wafer is A, wherein: R / πD=A / 360° Optionally, the rotating component comprises a first rotating member and a second rotating member; the second rotating member is located above the first rotating member and rotates concentrically with the first rotating member; the first rotating member is rotatably connected to the base; the calibration assembly further comprises a rotating driving component and a plurality of sliding links; the first rotating member is provided with a plurality of radial guide grooves; the second rotating member is provided with arc-shaped guide grooves corresponding to the sliding links; a positioning column on the sliding link is matched with the arc-shaped guide groove; the calibration unit is arranged at the end of the sliding link; the rotating driving component is used to drive the second rotating member to rotate relative to the first rotating member, so that the positioning column moves along the track of the arc-shaped guide groove, and the sliding link slides along the guide groove. Optionally, the plurality of calibration units slide along with the sliding links until the rotating driving component stops at a predetermined stroke position; or the calibration unit is provided with a position detection component, which controls the rotating driving component to stop when detecting that the calibration unit moves to a predetermined position. Optionally, the wafer calibration mechanism further comprises an image detection component, a gap positioning component, and a control unit; the image detection component and the gap positioning component are both mounted on the base; the image detection component is used to acquire image information of the wafer. The control unit is used to adjust the rotation angle of the rotating mechanism according to the angle position information between the image information of the wafer and the gap positioning component.

[0009] In a second aspect, the embodiments of the present application further provide a wafer dicing machine, comprising a workbench, a carrying arm, and a wafer calibration mechanism as described in the first aspect; the carrying arm is used to carry the wafer from a wafer box to the wafer calibration mechanism for calibration, and carry the calibrated wafer to the workbench.

[0010] In a third aspect, the embodiments of the present application further provide a wafer calibration method based on the wafer calibration mechanism as described in the first aspect, comprising: S100, controlling the calibration unit to move synchronously in the direction close to the center of the rotating component; S200, stopping moving when detecting that the calibration unit reaches a predetermined position; S300, acquiring image information of the wafer located in the rotating component, and adjusting the rotation angle of the rotating component according to the angle position information between the image information and the gap positioning component.

[0011] In a fourth aspect, the embodiments of the present application further provide a processor for running a program, wherein the program is used to execute the wafer calibration method according to the third aspect.

[0012] The embodiments of the present application have at least the following technical effects: The wafer calibration mechanism for the dicing machine provided by the embodiments of the present application sets the curved surface structure of the calibration unit towards the side of the center of the rotating part, which has a certain arc to facilitate the cooperation with the edge of the wafer. Thus, the difference between the radius of the wafer warping area and the radius of the normal flat wafer is basically eliminated through the arc design of the curved surface structure, so that the wafer is adjusted to the predetermined position of the rotating part through the guidance of the curved surface structure during the synchronous movement of the plurality of calibration units, which is beneficial to improve the subsequent notch alignment of the wafer and the subsequent dicing cutting process precision. BRIEF DESCRIPTION OF DRAWINGS

[0013] In order to more clearly illustrate the specific embodiments of the present application or the technical solutions in the prior art, the drawings needed to be used in the specific embodiments or the prior art description will be briefly introduced below. Obviously, the drawings in the following description are some embodiments of the present application, and other drawings can also be obtained by those skilled in the art without creative labor.

[0014] Figure 1 A schematic diagram of the overall structure of the dicing machine provided by the embodiments of the present application is provided. Figure 2 A schematic diagram of the overall structure of the wafer calibration mechanism provided by the embodiments of the present application is provided. Figure 3 A side view of the wafer calibration mechanism provided by the embodiments of the present application is provided. Figure 4 A schematic diagram of the structure of the wafer calibration mechanism provided by the embodiments of the present application is provided. Figure 5 A side view of the curved surface structure of the calibration unit of the wafer calibration mechanism provided by the embodiments of the present application is provided. Figure 6 A schematic diagram of the bending track principle of the curved surface structure of the calibration unit provided by the embodiments of the present application is provided. Figure 7 A flowchart of the wafer calibration method provided by the embodiments of the present application is provided.

[0015] Reference signs: 100-wafer calibration mechanism; 200-workbench; 300-handling arm; 400-material box; 1 - base; 2 - first rotating member; 201 - guide groove; 3 - second rotating member; 301 - arc-shaped guide groove; 4 - sliding connecting rod; 401 - positioning column; 5 - calibration unit; 510 - curved surface structure; 511 - first curved surface segment; 512 - second curved surface segment; 513 - third curved surface segment; 514 - fourth curved surface segment; 6 - support frame; 7 - image detection component; 8 - rotating driving component; 9 - rotating motor; 10 - rotating component. DETAILED DESCRIPTION

[0016] The technical solutions of the present application will be described clearly and completely below in conjunction with embodiments. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative work fall within the scope of protection of the present application.

[0017] Those skilled in the art can understand that, unless otherwise defined, all terms (including technical terms and scientific terms) used herein have the same meaning as commonly understood by those skilled in the art to which the present application belongs. It should also be understood that terms such as those defined in a general dictionary should be understood to have meanings consistent with those in the context of the prior art, and should not be interpreted to have idealized or overly formal meanings unless specifically defined as such.

[0018] Those skilled in the art can understand that, unless otherwise stated, the singular forms "a", "an" and "the" used herein also include the plural forms. It should be further understood that the use of the phrase "comprising" in the specification of the present application means that the features, integers, steps, operations, elements and / or components exist, but does not exclude the presence or addition of one or more other features, integers, steps, operations, elements, components and / or groups thereof. The phrase "and / or" used herein includes all or any one of the associated listed items and all combinations thereof.

[0019] The existing wafer dicing machine adopts a three-point positioning method for calibration. However, for a wafer with large warping, eccentricity problems occur on the side with larger warping during the calibration clamping process, which causes the center of the wafer to not coincide with the center of the worktable, thus reducing the alignment accuracy during the subsequent alignment of the notch, thereby affecting the subsequent wafer dicing accuracy.

[0020] Therefore, the embodiments of the present application provide a wafer calibration mechanism and calibration method for a dicing machine, a dicing machine and a processor, so that the calibration mechanism can calibrate the position of a warped wafer, thereby accurately positioning the notch.

[0021] In combination withFigures 1 to 5 As shown, the wafer calibration mechanism for the scriber provided by the embodiment of the present application comprises a base 1 and a rotating mechanism, the rotating mechanism is rotatable relative to the base 1, facilitating the alignment of the notch after the wafer calibration.

[0022] Specifically, the rotating mechanism comprises a rotating part 10 for placing the wafer and a calibration assembly. Optionally, the rotating part 10 is connected with the base 1 through a rotating motor 9, the rotating motor 9 drives the rotating part 10 and the wafer thereon to rotate, thereby realizing the alignment of the notch of the wafer. The calibration assembly is arranged along the circumference of the rotating part 10, and the calibration assembly comprises a plurality of calibration units 5 which are synchronously movable along the radial direction of the rotating part 10, so that the distance between each calibration unit 5 and the center of the rotating part 10 remains consistent, thus ensuring that the wafer is finally adjusted to the center of the rotating mechanism.

[0023] Optionally, the number of calibration units 5 is not less than three, and positioning is performed through at least three points to improve the accuracy of wafer calibration. In the embodiment, three calibration units 5 are taken as an example for illustration.

[0024] Optionally, the calibration unit 5 is in a block structure, and the size of the block structure can be set according to the positioning and calibration requirements, which is not specifically limited here. The block structure can be made of rubber or other materials with certain toughness, which can not only ensure the moving effect on the wafer, but also have certain buffering when contacting the wafer, thereby reducing the risk of broken pieces.

[0025] The inventor finds through research that for the wafer with edge warping, if normal planar contact is adopted, in the process of synchronous inward contraction of the calibration units 5, the edge not warping first contacts the side of the calibration unit 5, while the warped side still has a certain gap with the calibration unit 5, and continues to move inward, which will cause the center of the wafer to deviate to the warped side. Therefore, the side of the calibration unit 5 of the embodiment of the present application towards the center of the rotating part 10 is provided as a curved surface structure 510, the curved surface structure 510 has a certain arc, so as to cooperate with the edge of the wafer. In this way, through the arc design of the curved surface structure 510, the difference between the radius of the warped area of the wafer and the radius of the normal flat wafer is basically eliminated, so that in the process of synchronous movement of the plurality of calibration units 5, the wafer is adjusted to the predetermined position of the rotating part 10 through the guidance of the curved surface structure 510, which is beneficial to improve the subsequent notch alignment and other processing precision of the wafer. The predetermined position is the position where the center of the wafer overlaps with the center of the rotating part 10.

[0026] It should be noted that the design of the wafer calibration mechanism takes into account that the distance from the center of the multiple calibration units 5 to the center of the rotating component 10 must always be kept consistent. This ensures that the wafer is eventually moved to the predetermined position of the rotating component 10 during the synchronous movement of the calibration units 5, so that the center of the wafer overlaps with the center of the rotating component 10.

[0027] In some embodiments, such as Figure 6 As shown, assuming the wafer radius R and D is the diameter of the circle fitted to the surface when the wafer warps to different degrees, the edge position B of the wafer on the circle diameter can be obtained at the angle A relative to the center of the wafer, where R / πD=A / 360°. At this time, a curve composed of different warps can be obtained, and the surface structure 510 is obtained by using this curve as the arc surface.

[0028] In some embodiments, the curved structure 510 includes at least a plurality of continuously distributed curved segments with different degrees of curvature. Assuming the radius of the wafer is R, the lowermost curved segment (that is, the curved segment closest to the rotating component 10, designated as the first curved segment 511) has an arc radius of R. The arc radii of the remaining curved segments (in order, the second curved segment 512, the third curved segment 513, the fourth curved segment 514, etc.) decrease from bottom to top, that is, the curvature is greater at the top and less at the bottom (approaching a gentle curve).

[0029] Optionally, the number of surface segments shall not exceed four, and due to the limited size of the calibration unit 5, the number of surface segments with different degrees of curvature formed on its sides shall be limited.

[0030] Optionally, the arc lengths corresponding to the remaining curved surface segments decrease sequentially from bottom to top, that is, the first curved surface segment 511 has the longest arc length, and the fourth curved surface segment 514 has the shortest arc length. This facilitates effective positioning of sheets with different degrees of warpage. Optionally, as... Figure 5 As shown, the radii of the arc surfaces corresponding to the other multiple curved surface segments decrease sequentially from bottom to top in a geometric progression. For example, the radii of the arc surfaces corresponding to the first curved surface segment 511, the second curved surface segment 512, the third curved surface segment 513, and the fourth curved surface segment 514 can decrease in a common ratio of 1 / 2, 1 / 3, 1 / 4, or other ratios. This embodiment does not impose specific limitations.

[0031] Optionally, the first curved segment 511 corresponds to an arc surface radius R, the second curved segment corresponds to an arc surface radius R / 2, the third curved segment corresponds to an arc surface radius R / 4, and the fourth curved segment corresponds to an arc surface radius R / 8, that is, the arc surface radius of different curved segments decreases by a common ratio of 1 / 2, which is more conducive to adapting to the warping degree of the warped wafer. Because the greater the warping degree of the wafer, the smaller the distance from the edge of the warped wafer to the center of the wafer, in order to compensate for the gap between the edge of the wafer with a large warping degree and the calibration unit 5, the arc surface radius corresponding to different positions of the curved structure 510 on the side of the calibration unit 5 is set correspondingly to ensure that each calibration unit 5 is in contact with the edge of the wafer during wafer calibration to achieve calibration positioning.

[0032] Optionally, the height difference of the first curved segment 511 in the vertical direction is H1, and H1 is 4mm-8mm, which can achieve more accurate positioning for wafers with a warping degree within a preset range. For wafers with a large warping degree, the second curved segment 512, the third curved segment 513 and the fourth curved segment 514 need to be set correspondingly to meet the positioning requirements of the warped wafer. The specific arc length or height difference in the vertical direction of these curved segments is not specifically limited, and it can be understood that the arc length of the upper curved segment is shorter, which can meet the requirements of wafers with different warping degrees in a limited curved structure 510.

[0033] In some embodiments, continuing to refer to Figure 2 and Figure 4 , in order to realize the synchronous movement of each calibration unit, the rotating part 10 specifically comprises a first rotating part 2 and a second rotating part 3 which can rotate relative to each other, the second rotating part 3 is located above the first rotating part 2, the second rotating part 3 rotates concentrically with the first rotating part 2, and the first rotating part 2 and the base 1 are rotatably connected by a rotating motor 9. Among them, the first rotating part 2 and the second rotating part 3 are both circular disc structures, they are concentrically arranged, and the diameter of the second rotating part 3 located above is smaller than the diameter of the first rotating part 2, which is more conducive to arranging the calibration unit 5 on the periphery of the second rotating part 3.

[0034] Further, the calibration assembly further comprises a rotating driving part 8 and a plurality of sliding connecting rods 4 Figures 2 to 4The first rotating member 2 is provided with a plurality of guiding grooves 201 distributed along the radial direction on the upper surface thereof; the second rotating member 3 is provided with arc-shaped guiding grooves 301 corresponding to the sliding connecting rods 4, one end of each sliding connecting rod 4 is provided with a positioning column 401 which cooperates with the arc-shaped guiding groove 301 to realize the sliding movement in the arc-shaped guiding groove; the calibration unit 5 is connected to the end of the sliding connecting rod 4 away from the positioning column 401; the rotating driving component 8 is used to drive the second rotating member 3 to rotate relative to the first rotating member 2, so that the positioning column 401 moves along the track of the arc-shaped guiding groove 301, and the sliding connecting rod 4 is driven to slide along the guiding groove 201, and the calibration unit 5 is further driven to move along the radial direction of the rotating component 10.

[0035] Optionally, the plurality of calibration units 5 slide along with the sliding connecting rods 4 until the rotating driving component 8 stops when reaching a predetermined stroke position, i.e. the start and end points of the stroke of the rotating driving component 8 are preset, when the rotating driving component 8 is at the end point of the stroke, the center of the wafer is just adjusted to overlap with the center of the second rotating member 3, and the start point of the stroke only needs to ensure that the wafer can be easily placed on the second rotating member 3 and does not interfere with the calibration unit 5 and other components.

[0036] Optionally, the calibration unit 5 is provided with a position detection component, such as a position detection component arranged at the bottom of the calibration unit 5, during the movement of the calibration unit 5, the position of the calibration unit 5 relative to the second rotating member 3 is detected by the position detection component, and when the calibration unit 5 moves to a predetermined position, the rotating driving component 8 is controlled to stop working. It can be understood that the predetermined position of the calibration unit 5 can be understood as the position of the calibration unit 5 when the wafer is clamped by the calibration unit 5 and just overlaps with the center of the second rotating member 3.

[0037] Optionally, the rotating driving component 8 in the embodiment is a linear motor, which drives the second rotating member 3 to move relative to the first rotating member 2, which is beneficial to improve the wafer calibration efficiency and accuracy.

[0038] Optionally, the rotating driving component 8 in the embodiment is a driving cylinder, which drives the second rotating member 3 to move relative to the first rotating member 2, the driving cylinder has fast response speed, simple control and low cost.

[0039] In other embodiments, each calibration unit 5 can also be driven to move along the radial direction of the second rotating member 3 by a linear driving mechanism to realize the center position calibration of the wafer.

[0040] In some embodiments, the wafer calibration mechanism further comprises an image detection component 7, a notch positioning component, and a control unit; the image detection component 7 and the notch positioning component are both installed on the base 1, and the image detection component 7 is used to acquire image information of the wafer. Optionally, the image detection component 7 can adopt a CCD image detection component, which has higher accuracy. The CCD image detection component can be fixed to the base 1 through a support frame 6, and can ensure that the image information of the wafer can be acquired. The specific position of the CCD image detection component can not be specifically required.

[0041] Specifically, the control unit adjusts the rotation angle of the wafer according to the angle position information between the image information of the wafer and the notch positioning component, that is, adjusts the rotation angle of the rotating motor 9 according to the angle difference between the position of the notch of the wafer in the image information and the actual notch positioning component, so as to ensure that the notch can be aligned with the direction of the notch positioning detection component, and to facilitate improving the processing accuracy of the subsequent process. It can be understood that the alignment accuracy of the subsequent notch can be ensured only after the wafer is calibrated by the calibration unit 5, because if the wafer calibration accuracy in the early stage is not high, the alignment of the notch through the angle rotation will also be deviated.

[0042] Optionally, the control unit in the embodiment of the present application can also be used to control the rotating driving component in the foregoing embodiment, so as to realize automatic control of the moving process of the calibration unit. In addition, the control unit in the embodiment of the present application can be implemented by using the controller of the dicing machine itself, or can be additionally implemented by using other industrial controllers, and the present application does not make specific limitation thereto.

[0043] In some embodiments, the surface of the curved structure 510 is subjected to smooth treatment, which is beneficial to reducing the friction force between the wafer and the calibration unit 5, thereby improving the adjustment accuracy of the wafer, and can also effectively reduce the risk of wafer breakage in the calibration process.

[0044] Based on the same inventive concept, as shown in Figure 1 The embodiment of the present application also provides a dicing machine, which comprises a workbench 200, a carrying arm 300, and a wafer calibration mechanism 100 as described in the foregoing embodiments. The carrying arm 300 is used to carry the wafer from a wafer box 400 to the wafer calibration mechanism 100 for calibration, and to carry the calibrated wafer to the workbench 200, so as to perform dicing on the cutting path of the wafer.

[0045] The wafer calibration mechanism of the wafer scribing machine provided by the embodiment comprises a plurality of calibration units, and the calibration units are arranged on the rotating part in a circular manner.

[0046] As shown in Figure 7 The wafer calibration method provided by the embodiment of the present application is based on the wafer calibration mechanism as described in the foregoing embodiments, and comprises the following steps of S100-S300: S100, the calibration units are controlled to move synchronously along the direction close to the center of the rotating part.

[0047] Specifically, the calibration units are controlled to contract synchronously, and in the process of synchronous movement, the edge of the warped wafer is in contact with the edge of the wafer and gradually tightens.

[0048] S200, the movement of the calibration units is stopped when it is detected that the calibration units reach the predetermined position.

[0049] Specifically, the predetermined position of the calibration units is determined in advance according to the size of the wafer when the calibration mechanism is designed, and the moving position of the calibration mechanism can be accurately controlled by the corresponding position detection part.

[0050] S300, image information of the wafer located on the rotating part is acquired, and the rotating angle of the rotating part is adjusted according to the angle position information between the image information and the notch positioning part.

[0051] Optionally, in S300, the image information of the wafer located on the rotating part 10 can be acquired by image detection part, and the rotating motor is controlled by the difference between the notch position of the wafer in the image information and the rotating angle of the notch positioning part. Wherein, the notch positioning part is installed at the position calibrated as the position, which is the direction that the notch needs to be aligned.

[0052] The wafer calibration method provided by the embodiment adopts the wafer calibration mechanism with the curved surface structure, so as to cooperate with the edge of the wafer. In the calibration process, the difference between the radius of the wafer warping area and the radius of the normal flat wafer is basically eliminated through the curvature design of the curved surface structure. In the process of synchronous movement of the plurality of calibration units, the wafer is adjusted to the predetermined position of the rotating part through the guidance of the curved surface structure, which is beneficial to subsequent adjustment of the rotation angle of the rotating part through image detection, so as to improve the notch alignment of the wafer and the precision of the subsequent slicing cutting process.

[0053] Based on the same inventive concept, the embodiment of the present application also provides a processor for running a program. Those skilled in the art can understand that all or part of the steps in the wafer calibration method of the above-mentioned embodiment can be completed by instructing the relevant hardware through the program. The program can be stored in a computer-readable storage medium, including ROM / RAM, magnetic disk, optical disc, etc. The program is used to execute the wafer calibration method as described in the above-mentioned embodiment when running. For the specific steps of the wafer calibration method, refer to steps S100-S300 in the above-mentioned embodiment, which will not be repeated here.

[0054] Those skilled in the art can understand that the steps, measures and schemes in the various operations, methods and processes discussed in the present application can be alternated, changed, combined or deleted. Further, other steps, measures and schemes in the various operations, methods and processes discussed in the present application can also be alternated, changed, rearranged, decomposed, combined or deleted. Further, the steps, measures and schemes in the various operations, methods and processes in the prior art can also be alternated, changed, rearranged, decomposed, combined or deleted.

[0055] In the description of the present application, it should be understood that the terms "center", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer" and the like indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings, and are only for the purpose of facilitating the description of the present application and simplifying the description, and do not indicate or imply that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as a limitation of the present application.

[0056] The terms "first", "second" are only for descriptive purposes, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the technical features indicated. Therefore, the features defined with "first", "second" can explicitly or implicitly include one or more features. In the description of the present application, unless otherwise stated, the meaning of "a plurality of" is two or more.

[0057] In the description of the present application, it is necessary to point out that, unless otherwise explicitly specified and limited, the terms "mounting", "connection", "linking" should be understood in a broad sense, for example, it can be fixed connection, or detachable connection, or integrally connected; it can be directly connected, or indirectly connected through intermediate medium, or the internal communication of two elements. For those skilled in the art, the specific meaning of the above terms in the present application can be understood according to the specific circumstances.

[0058] In the description of the present application, specific features, structures, materials or characteristics can be combined in any one or more embodiments or examples in a suitable manner. It should be understood that although each step in the flowchart of the drawings is displayed in sequence according to the direction of the arrow, these steps are not necessarily executed in sequence according to the direction of the arrow. Unless otherwise specified herein, the execution of these steps is not strictly limited in sequence, and they can be executed in other order. Moreover, at least part of the steps in the flowchart of the drawings can include multiple sub-steps or multiple stages, which are not necessarily executed at the same time, but can be executed at different times, and the execution sequence is not necessarily sequential, but can be alternately or alternately executed with other steps or other steps of sub-steps or stages.

[0059] Finally, it should be pointed out that: the above embodiments are only used to illustrate the technical solutions of the present application, and not to limit them; although the present application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that: it can still modify the technical solutions recorded in the foregoing embodiments, or make equivalent replacement for part or all of the technical features; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the scope of the technical solutions of the embodiments of the present application.

Claims

1. A wafer calibration mechanism for a dicing machine, characterized in that, The application relates to a wafer calibration mechanism. The wafer calibration mechanism comprises a base and a rotating mechanism rotatably arranged on the base; the rotating mechanism comprises a rotating part for placing a wafer and a calibration assembly arranged along the circumference of the rotating part, the calibration assembly comprises a plurality of calibration units capable of moving radially synchronously along the rotating part, and the calibration units are provided with curved surface structures on the side towards the center of the rotating part for cooperating with the edge of the wafer; during synchronous movement of the plurality of calibration units, the wafer is adjusted to a predetermined position of the rotating part through the guidance of the curved surface structures. The curved surface structures comprise at least a plurality of continuously distributed curved surface segments; the radius of the wafer is R; the radius of the arc surface corresponding to the lowermost curved surface segment among the plurality of curved surface segments is R; and the radius of the arc surface corresponding to the remaining curved surface segments decreases from bottom to top.

2. The wafer calibration mechanism of claim 1, wherein, The radius of the arc surface corresponding to the remaining curved surface segments decreases from bottom to top according to an equal ratio series.

3. The wafer calibration mechanism of claim 2, wherein, The radius of the wafer is R; the diameter of a fitted circle according to the wafer warping degree is D; the angle of the edge position of the wafer along the direction of the fitted circle on the fitted circle relative to the center position of the wafer is A, wherein R / (pi*D) = A / 360.

4. The wafer calibration mechanism of claim 1, wherein, The rotating part comprises a first rotating member and a second rotating member; the second rotating member is located above the first rotating member and rotates concentrically with the first rotating member; and the first rotating member is rotatably connected with the base.

5. The wafer alignment mechanism of claim 1, wherein, The calibration assembly further comprises rotating driving parts and a plurality of sliding connecting rods; the upper surface of the first rotating member is provided with a plurality of radially distributed guide grooves; the second rotating member is provided with arc-shaped guide grooves corresponding to the sliding connecting rods; and the positioning columns on the sliding connecting rods are matched with the arc-shaped guide grooves. The calibration units are arranged on the sliding connecting rods; the rotating driving parts are used for driving the second rotating member to rotate relative to the first rotating member, so that the positioning columns move along the track of the arc-shaped guide grooves and the sliding connecting rods slide along the guide grooves. The plurality of calibration units slide along with the sliding connecting rods until the rotating driving parts stop at a predetermined stroke position.

6. The wafer calibration mechanism of claim 5, wherein, Alternatively, the calibration units are provided with position detection parts; when the calibration units are detected to move to a predetermined position, the rotating driving parts are controlled to stop. Further comprising:

7. The wafer calibration mechanism of claim 5, wherein, image detection parts, notch positioning parts and a control unit; the image detection parts and the notch positioning parts are both mounted on the base; the image detection parts are used for acquiring image information of the wafer; the control unit is used for adjusting the rotating angle of the rotating mechanism according to the angle position information between the image information of the wafer and the notch positioning parts. Further comprising:

8. A dicing saw, characterized by, a workbench, a carrying arm and the wafer calibration mechanism according to any one of claims 1 to 7; the carrying arm is used for carrying the wafer from a box to the wafer calibration mechanism for calibration and carrying the calibrated wafer to the workbench. Further comprising:

9. A wafer calibration method based on the wafer calibration mechanism according to any one of claims 1 to 7, characterized by, S100, controlling the calibration units to move synchronously in the direction close to the center of the rotating part; ​ S200, stopping moving when it is detected that the calibration unit reaches a predetermined position; S300, acquiring image information of the wafer located at the rotating component, and adjusting the rotating angle of the rotating component according to the angle position information between the image information and the gap positioning component.

10. A processor, comprising: The processor is configured to run a program, and the program is configured to execute the wafer calibration method in claim 9 when running.

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