Wafer calibration mechanism and calibration method for wafer sawing machine, wafer sawing machine and processor

Abstract

The present application relates to wafer dicing technical field, provide a kind of wafer calibration mechanism and calibration method for dicing machine, dicing machine and processor, the wafer calibration mechanism includes: pedestal and rotating mechanism;Rotating mechanism includes rotating part and calibration component, calibration component includes multiple calibration units, which can be radially synchronized along the rotating part, the side of calibration unit towards the center of rotating part is provided with curved surface structure for cooperating with wafer edge, the side of calibration unit towards the center of rotating part is set to curved surface structure, the curved surface structure has certain camber to facilitate with wafer edge cooperation, so that the difference between the radius of wafer warping area and the radius of normal flat wafer is compensated by camber design of curved surface structure, so that in the process of multiple calibration units synchronous movement, the wafer is adjusted to the predetermined position of rotating part by the guidance of the curved surface structure, it is favorable to improve the accuracy of subsequent notch mouth alignment and other processing technology of wafer.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of wafer dicing, and in particular to a wafer calibration mechanism and calibration method for a dicing machine, a dicing machine and a processor. BACKGROUND

[0002] In the semiconductor wafer dicing process, the wafer can be subjected to the dicing process only after being carried to the worktable by the mechanical carrying arm. Since the warping degree is too large to completely adhere to the worktable, the adsorption vacuum is insufficient, so the notch positioning cannot be performed, thereby affecting the cutting accuracy of the subsequent wafer dicing.

[0003] The calibration method commonly used in the current dicing machine is to use three-point conical surfaces for calibration, which can ignore the wafer warping problem, so as to more accurately position the center of the circle. The three-point positioning first clamps and rotates the wafer, and then uses a camera to position the notch of the wafer. However, the current three-point positioning method has a wafer eccentricity problem in the clamping process for a large-warping wafer, thereby affecting the subsequent notch positioning accuracy. SUMMARY

[0004] The present application provides a wafer calibration mechanism and calibration method for a dicing machine, a dicing machine and a processor to solve the problem that the existing semiconductor processing equipment cannot accurately position the notch for a warped wafer.

[0005] In a first aspect, the present application provides a wafer calibration mechanism for a dicing machine, comprising: a base and a rotating mechanism rotatably arranged on the base;

[0006] The rotating mechanism comprises a rotating component for placing a wafer and a calibration assembly arranged along the circumference of the rotating component, comprising a plurality of calibration units that can move radially synchronously along the rotating component. The calibration unit is provided with a curved surface structure on the side facing the center of the rotating component for cooperating with the edge of the wafer. During the synchronous movement of the plurality of calibration units, the wafer is adjusted to the predetermined position of the rotating component through the guidance of the curved surface structure.

[0007] Optionally, the curved surface structure comprises at least a plurality of continuously distributed curved surface segments. The radius of the wafer is R, and the radius of the arc surface corresponding to the lowermost curved surface segment of the plurality of curved surface segments is R. The radii of the arc surfaces corresponding to the remaining plurality of curved surface segments decrease in turn from bottom to top.

[0008] Optionally, the radii of the arc surfaces corresponding to the remaining plurality of curved surface segments decrease in turn from bottom to top according to a geometric progression.

[0009] Optionally, the number of curved surface segments is not more than four.

[0010] Optionally, the radius of the wafer is R, the diameter of the fitted circle is D, and the angle A between the edge position of the wafer along the fitted circle and the center of the wafer is equal to R / πD=A / 360°.

[0011] Optionally, the rotating component comprises a first rotating member and a second rotating member, the second rotating member is located above the first rotating member and rotates concentrically with the first rotating member, and the first rotating member is rotatably connected to the base; the calibration assembly further comprises a rotating driving component and a plurality of sliding links, the first rotating member is provided with a plurality of radial guide grooves, the second rotating member is provided with arc-shaped guide grooves corresponding to the sliding links, and the positioning column on the sliding link is matched with the arc-shaped guide groove; the calibration unit is arranged at the end of the sliding link, and the rotating driving component is used to drive the second rotating member to rotate relative to the first rotating member, so that the positioning column moves along the track of the arc-shaped guide groove, and the sliding link slides along the guide groove.

[0012] Optionally, the plurality of calibration units slide along with the sliding links until the rotating driving component stops at a predetermined stroke position; or the calibration unit is provided with a position detection component, which controls the rotating driving component to stop when detecting that the calibration unit moves to a predetermined position.

[0013] Optionally, the wafer calibration mechanism further comprises an image detection component, a gap positioning component, and a control unit; the image detection component and the gap positioning component are both mounted on the base, and the image detection component is used to acquire image information of the wafer.

[0014] The control unit is used to adjust the rotation angle of the rotating mechanism according to the angle position information between the image information of the wafer and the gap positioning component.

[0015] In a second aspect, the embodiments of the present application further provide a wafer dicing machine, comprising a workbench, a carrying arm, and a wafer calibration mechanism as described in the first aspect, the carrying arm is used to carry the wafer from a wafer box to the wafer calibration mechanism for calibration, and carry the calibrated wafer to the workbench.

[0016] In a third aspect, the embodiments of the present application further provide a wafer calibration method based on the wafer calibration mechanism as described in the first aspect, comprising:

[0017] S100, control the calibration unit to move synchronously in the direction close to the center of the rotating component;

[0018] S200, stopping moving when it is detected that the calibration unit reaches the predetermined position;

[0019] S300, acquiring image information of the wafer located at the rotating component, and adjusting the rotating angle of the rotating component according to the angle position information between the image information and the notch positioning component.

[0020] In a fourth aspect, an embodiment of the present application further provides a processor, which is used to run a program, wherein the program is used to execute the wafer calibration method in the third aspect when running.

[0021] The embodiment of the present application has at least the following technical effects:

[0022] The wafer calibration mechanism for the dicing machine provided by the embodiment of the present application sets the side of the calibration unit facing the center of the rotating component as a curved surface structure, which has a certain curvature, so as to cooperate with the edge of the wafer. Thus, the difference between the radius of the wafer warping area and the radius of the normal flat wafer is basically eliminated through the curvature design of the curved surface structure, so that the wafer is adjusted to the predetermined position of the rotating component through the guidance of the curved surface structure during the synchronous movement of the plurality of calibration units, which is beneficial to improve the subsequent notch alignment of the wafer and the subsequent dicing cutting process precision. BRIEF DESCRIPTION OF DRAWINGS

[0023] In order to more clearly illustrate the specific embodiments of the present application or the technical solutions in the prior art, the following will briefly introduce the drawings needed to be used in the specific embodiments or prior art description. Obviously, the drawings in the following description are some embodiments of the present application, and those skilled in the art can also obtain other drawings according to these drawings without creative labor.

[0024] Figure 1 A schematic diagram of the overall structure of the dicing machine provided by the embodiment of the present application is shown in the figure.

[0025] Figure 2 A schematic diagram of the overall structure of the wafer calibration mechanism provided by the embodiment of the present application is shown in the figure.

[0026] Figure 3 A side view of the wafer calibration mechanism provided by the embodiment of the present application is shown in the figure.

[0027] Figure 4 A schematic diagram of the structure of the wafer calibration mechanism provided by the embodiment of the present application, which hides the second rotating component, is shown in the figure.

[0028] Figure 5 A side view of the curved surface structure of the calibration unit of the wafer calibration mechanism provided by the embodiment of the present application is shown in the figure.

[0029] Figure 6 A schematic diagram of a bending track principle of a curved surface structure of a calibration unit provided for an embodiment of the present application;

[0030] Figure 7 A flowchart of a wafer calibration method provided for an embodiment of the present application.

[0031] Reference signs:

[0032] 100-wafer calibration mechanism; 200-workbench; 300-handling arm; 400-cassette;

[0033] 1-base; 2-first rotating part; 201-guiding groove; 3-second rotating part; 301-arc-shaped guiding groove; 4-sliding connecting rod; 401-positioning column; 5-calibration unit; 510-curved surface structure; 511-first curved surface section; 512-second curved surface section; 513-third curved surface section; 514-fourth curved surface section; 6-support frame; 7-image detecting part; 8-rotating driving part; 9-rotating motor; 10-rotating part. DETAILED DESCRIPTION

[0034] The technical solutions of the present application will be described clearly and completely below in conjunction with embodiments. Obviously, the described embodiments are only some of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative work fall within the scope of the present application.

[0035] Those skilled in the art can understand that, unless otherwise defined, all the terms (including technical terms and scientific terms) used herein have the same meaning as that generally understood by those skilled in the art in the field of the present application. It should also be understood that, the terms such as those defined in a general dictionary should be understood as having the same meaning as that in the context of the prior art, and should not be interpreted in an idealized or overly formal sense unless specifically defined as such.

[0036] Those skilled in the art can understand that, unless otherwise stated, the singular forms “a”, “an” and “the” used herein also include the plural forms. It should be further understood that the phrase “comprising” used in the specification of the present application means that the features, integers, steps, operations, elements and / or components exist, but does not exclude the presence or addition of one or more other features, integers, steps, operations, elements, components and / or groups thereof. The phrase “and / or” used herein includes all or any one of the associated listed items and all combinations thereof.

[0037] The existing wafer dicing machine adopts three-point positioning mode for calibration, but for a large warped wafer, eccentricity problem will occur on the side with larger warping degree during the calibration clamping process, which causes the center of the wafer to be unable to coincide with the center of the workbench, so that the alignment accuracy is reduced in the subsequent process of aligning the notch, thereby affecting the subsequent wafer dicing cutting accuracy.

[0038] Therefore, the wafer calibration mechanism and calibration method for the wafer dicing machine, the wafer dicing machine and the processor are provided to enable the calibration mechanism to calibrate the position of the warped wafer, so as to accurately position the notch.

[0039] In combination with Figures 1 to 5 The wafer calibration mechanism for the wafer dicing machine provided by the embodiment of the present application comprises a base 1 and a rotating mechanism, and the rotating mechanism is relatively rotatable with the base 1, so as to facilitate the alignment of the notch after wafer calibration.

[0040] Specifically, the rotating mechanism comprises a rotating part 10 and a calibration assembly, and the rotating part 10 is used for placing the wafer. Optionally, the rotating part 10 is connected with the base 1 through a rotating motor 9, and the rotating motor 9 drives the rotating part 10 and the wafer thereon to rotate, so as to realize the alignment of the notch of the wafer. The calibration assembly is arranged along the circumference of the rotating part 10, and the calibration assembly comprises a plurality of calibration units 5 which can move radially synchronously along the rotating part 10, so that the distance between each calibration unit 5 and the center of the rotating part 10 remains consistent, which ensures that the wafer is finally adjusted to the center of the rotating mechanism.

[0041] Optionally, the number of calibration units 5 is not less than three, and positioning is performed through at least three points, so as to improve the accuracy of wafer calibration. In the embodiment, three calibration units 5 are taken as an example for description.

[0042] Optionally, the calibration unit 5 is in a block structure, and the size of the block structure can be set according to the positioning and calibration requirements, which is not specifically limited here. The block structure can be made of rubber or other materials with certain toughness, which can not only ensure the moving effect on the wafer, but also have certain buffering when contacting the wafer, thereby reducing the risk of broken pieces.

[0043] The inventor finds through research that, for a wafer with an edge warping, if normal planar contact is adopted, in the process of synchronous inward shrinkage of the calibration units 5, the edge without warping first contacts the side of the calibration units 5, and there is still a certain gap between the warped side and the calibration units 5, and the further inward movement will cause the center of the wafer to deviate to the warped side. Therefore, the side of the calibration units 5 towards the center of the rotating component 10 is provided as a curved surface structure 510 in the embodiment of the present application, the curved surface structure 510 has a certain arc to facilitate cooperation with the edge of the wafer, so that the difference between the radius of the wafer warping area and the radius of the normal flat wafer is basically eliminated through the arc design of the curved surface structure 510, so that the wafer is adjusted to the predetermined position of the rotating component 10 through the guidance of the curved surface structure 510 in the process of synchronous movement of the plurality of calibration units 5, which is beneficial to improve the subsequent notch alignment of the wafer and the precision of other processing technologies. The predetermined position is the position where the center of the wafer overlaps with the center of the rotating component 10.

[0044] It should be noted that the distance from the plurality of calibration units 5 to the center of the rotating component 10 needs to be kept consistent when designing the wafer calibration mechanism, so that the wafer can be finally moved to the predetermined position of the rotating component 10 in the process of synchronous movement of the calibration units 5, so that the center of the wafer overlaps with the center of the rotating component 10.

[0045] In some embodiments, as shown in Figure 6 assuming that the radius of the wafer is R and the diameters of the fitted circles are different when the warping degree of the wafer D is different, the position B of the edge of the wafer on the fitted circle can be obtained, and the angle A of the position of the edge of the wafer on the fitted circle relative to the position of the center of the wafer can be obtained, where R / πD=A / 360°, and a curve composed of different warping degrees can be obtained, and the curved surface structure 510 can be obtained by making an arc surface according to the curve.

[0046] In some embodiments, the curved surface structure 510 at least includes a plurality of curved surface segments continuously distributed, and the bending degrees of the plurality of curved surface segments are different. Assuming that the radius of the wafer is R, the arc radius corresponding to the lowermost curved surface segment (that is, the curved surface segment closest to the rotating component 10, which is set as the first curved surface segment 511) of the plurality of curved surface segments is R, and the arc radius corresponding to the remaining plurality of curved surface segments (in turn, the second curved surface segment 512, the third curved surface segment 513, the fourth curved surface segment 514, and so on) decreases from bottom to top, that is, the bending degree is larger at the top and smaller at the bottom (tending to be flat).

[0047] Optionally, the number of curved surface segments is not more than four, because the size of the calibration units 5 is limited, and the number of curved surface segments formed by the side edges with different bending degrees is limited.

[0048] Optionally, the lengths of the arcs corresponding to the remaining plurality of curved segments decrease in order from bottom to top, that is, the length of the arc of the first curved segment 511 is the longest, and the length of the arc of the fourth curved segment 514 is the shortest, which is conducive to the positioning of the wafers with different degrees of warping. Optionally, as shown in Figure 5 Optionally, the radii of the arcs corresponding to the remaining plurality of curved segments decrease in order from bottom to top according to a geometric progression, for example, the radii of the arcs corresponding to the first curved segment 511, the second curved segment 512, the third curved segment 513, and the fourth curved segment 514 can decrease by a common ratio of 1 / 2, 1 / 3, 1 / 4, or other common ratios. The present embodiment is not limited in this regard.

[0049] Optionally, the radius of the arc corresponding to the first curved segment 511 is R, the radius of the arc corresponding to the second curved segment is R / 2, the radius of the arc corresponding to the third curved segment is R / 4, and the radius of the arc corresponding to the fourth curved segment is R / 8, that is, the radii of the arcs of the different curved segments decrease by a common ratio of 1 / 2. This arrangement is more conducive to adapting to the degree of warping of the wafer, because the greater the degree of warping of the wafer, the smaller the distance from the edge of the warped wafer to the center of the wafer. Therefore, in order to compensate for the gap between the edge of the wafer with a large degree of warping and the calibration unit 5, the radii of the arcs corresponding to different positions of the curved structure 510 on the side of the calibration unit 5 are set correspondingly to ensure that the calibration units 5 are in contact with the edge of the wafer at the same time during the wafer calibration process to achieve calibration positioning.

[0050] Optionally, the height difference of the first curved segment 511 in the vertical direction is H1, which is 4mm~8mm. This allows for more accurate positioning of wafers with a degree of warping within a predetermined range. For wafers with a large degree of warping, the second curved segment 512, the third curved segment 513, and the fourth curved segment 514 need to be set correspondingly to meet the positioning requirements of the warped wafer. The specific values of the arc length or the height difference in the vertical direction of these curved segments are not limited in this regard. It can be understood that the shorter the arc length of the upper curved segment, the more it can meet the requirements of wafers with different degrees of warping within the limited curved structure 510.

[0051] In some embodiments, continuing to refer to Figure 2 and Figure 4 , in order to achieve synchronous movement of the calibration units, the rotating component 10 specifically includes a first rotating member 2 and a second rotating member 3 that can rotate relative to each other. The second rotating member 3 is located above the first rotating member 2 and rotates concentrically with the first rotating member 2. The first rotating member 2 and the base 1 are connected by a rotating motor 9 to achieve rotatable connection. The first rotating member 2 and the second rotating member 3 are both circular disc structures, and are concentrically arranged, with the diameter of the second rotating member 3 being smaller than that of the first rotating member 2. This is more conducive to arranging the calibration units 5 on the periphery of the second rotating member 3.

[0052] Further, the calibration assembly further comprises a rotating driving component 8 and a plurality of sliding connecting rods 4 (three sliding connecting rods 4 are shown in the figure) Figures 2 to 4 The upper surface of the first rotating member 2 is provided with a plurality of radial guide grooves 201, and the second rotating member 3 is provided with arc-shaped guide grooves 301 corresponding to the sliding connecting rods 4. One end of the sliding connecting rod 4 is provided with a positioning column 401, which cooperates with the arc-shaped guide groove 301 to realize sliding movement in the arc-shaped guide groove. The calibration unit 5 is connected to the end of the sliding connecting rod 4 away from the positioning column 401. The rotating driving component 8 is used to drive the second rotating member 3 to rotate relative to the first rotating member 2, so that the positioning column 401 moves along the track of the arc-shaped guide groove 301, and at the same time, the sliding connecting rod 4 slides along the guide groove 201, and the calibration unit 5 moves along the radial direction of the rotating component 10.

[0053] Optionally, a plurality of calibration units 5 slide along the sliding connecting rods 4 until the rotating driving component 8 stops at a predetermined stroke position, i.e., the start and end points of the stroke of the rotating driving component 8 are pre-set. When the rotating driving component 8 is at the end point of the stroke, the center of the wafer is just adjusted to overlap with the center of the second rotating member 3, and the start point of the stroke only needs to ensure that the wafer can be easily placed on the second rotating member 3 without interfering with the calibration unit 5 and other components.

[0054] Optionally, the calibration unit 5 is provided with a position detection component, such as a position detection component arranged at the bottom of the calibration unit 5. During the movement of the calibration unit 5, the position of the calibration unit 5 relative to the second rotating member 3 is detected by the position detection component, and when the calibration unit 5 moves to a predetermined position, the rotating driving component 8 is controlled to stop working. It can be understood that the predetermined position of the calibration unit 5 can be understood as the position of the calibration unit 5 when the wafer is clamped by the calibration unit 5 and just overlaps with the center of the second rotating member 3.

[0055] Optionally, the rotating driving component 8 in the embodiment is a linear motor, which drives the second rotating member 3 to move relative to the first rotating member 2, which is beneficial to improve the efficiency and accuracy of wafer calibration.

[0056] Optionally, the rotating driving component 8 in the embodiment is a driving cylinder, which drives the second rotating member 3 to move relative to the first rotating member 2. The driving cylinder has fast response speed, simple control and low cost.

[0057] In other embodiments, each calibration unit 5 can also be driven by a linear driving mechanism to move along the radial direction of the second rotating member 3, so as to realize the center position calibration of the wafer.

[0058] In some embodiments, the wafer calibration mechanism further comprises an image detection component 7, a notch positioning component and a control unit, wherein the image detection component 7 and the notch positioning component are both mounted on the base 1, and the image detection component 7 is configured to acquire image information of the wafer. Optionally, the image detection component 7 can be a CCD image detection component, which has higher accuracy. The CCD image detection component can be fixed to the base 1 through a support frame 6, and can acquire image information of the wafer. The specific position of the CCD image detection component is not limited.

[0059] Specifically, the control unit adjusts the rotation angle of the wafer according to the angle position information between the image information of the wafer and the notch positioning component, that is, adjusts the rotation angle of the rotation motor 9 according to the angle difference between the position of the notch in the image information and the actual notch positioning component, so as to ensure that the notch can be aligned with the direction of the notch positioning component, and to improve the processing accuracy of the subsequent process. It can be understood that the alignment accuracy of the subsequent notch can be ensured only after the wafer is calibrated by the calibration unit 5, because if the wafer calibration accuracy in the early stage is not high, the alignment of the notch through the angle rotation will also be deviated.

[0060] Optionally, the control unit in the embodiment of the present application can also be used to control the rotation driving component in the foregoing embodiment, so as to realize automatic control of the movement process of the calibration unit. In addition, the control unit in the embodiment of the present application can be implemented by using the controller of the dicing machine itself, or can be implemented by additionally using other industrial controllers, and the present application does not limit the specific implementation.

[0061] In some embodiments, the surface of the curved structure 510 is treated to be smooth, which is beneficial to reduce the friction between the wafer and the calibration unit 5, thereby improving the adjustment accuracy of the wafer, and effectively reducing the risk of wafer breakage in the calibration process.

[0062] Based on the same inventive concept, as shown in Figure 1 The embodiment of the present application also provides a dicing machine, which comprises a workbench 200, a carrying arm 300 and a wafer calibration mechanism 100 as described in the foregoing embodiments, wherein the carrying arm 300 is configured to carry the wafer from a wafer box 400 to the wafer calibration mechanism 100 for calibration, and carry the calibrated wafer to the workbench 200 for cutting the cutting path of the wafer.

[0063] The wafer calibration mechanism of the wafer calibration device is provided with a curved surface structure on the side of the calibration unit facing the center of the rotating part, and the curved surface structure has a certain curvature to facilitate cooperation with the edge of the wafer. Thus, the difference between the radius of the wafer warping area and the radius of the normal flat wafer is basically eliminated through the curvature design of the curved surface structure, so that the wafer is adjusted to the predetermined position of the rotating part through the guidance of the curved surface structure during the synchronous movement of the plurality of calibration units, and the subsequent notch alignment of the wafer and the subsequent slicing cutting process precision are facilitated.

[0064] As shown in Figure 7 The wafer calibration method is based on the wafer calibration mechanism as described in the foregoing embodiments, and the wafer calibration method comprises the following steps of S100-S300:

[0065] S100, the calibration units are controlled to move synchronously in the direction close to the center of the rotating part.

[0066] Specifically, the calibration units are controlled to contract synchronously inwardly, and during the synchronous movement, the edge of the wafer warping area is in contact with the edge of the wafer and gradually tightens.

[0067] S200, the movement of the calibration units is stopped when it is detected that the calibration units reach the predetermined position.

[0068] Specifically, the predetermined position of the calibration units is determined in advance according to the size of the wafer when the calibration mechanism is designed, and the movement position of the calibration mechanism can be accurately controlled through the corresponding position detection part.

[0069] S300, image information of the wafer located on the rotating part is acquired, and the rotation angle of the rotating part is adjusted according to the angle position information between the image information and the notch positioning part.

[0070] Optionally, in S300, the image information of the wafer located on the rotating part 10 can be acquired by image detection part, and the rotation angle of the rotating motor is controlled through the difference between the notch position of the wafer in the image information and the rotation angle of the notch positioning part. Wherein, the notch positioning part is installed at the position calibrated as the position, which is the direction that the notch needs to be aligned.

[0071] The wafer calibration method provided by the embodiment adopts the wafer calibration mechanism with the curved surface structure, so as to cooperate with the edge of the wafer. In the calibration process, the difference between the radius of the wafer warping area and the radius of the normal flat wafer is basically eliminated through the curvature design of the curved surface structure. In the process of synchronous movement of the plurality of calibration units, the wafer is adjusted to the predetermined position of the rotating part through the guidance of the curved surface structure, which is beneficial to subsequent adjustment of the rotation angle of the rotating part through image detection, so as to improve the notch alignment of the wafer and the precision of the subsequent slicing cutting process.

[0072] Based on the same inventive concept, the embodiment of the present application also provides a processor for running a program. Those skilled in the art can understand that all or part of the steps in the wafer calibration method of the above-mentioned embodiment can be completed by instructing the relevant hardware through the program. The program can be stored in a computer-readable storage medium, including ROM / RAM, magnetic disk, optical disc, etc. The program is used to execute the wafer calibration method as described in the above-mentioned embodiment when running. For the specific steps of the wafer calibration method, refer to steps S100-S300 in the above-mentioned embodiment, which will not be repeated here.

[0073] Those skilled in the art can understand that the steps, measures and schemes in the various operations, methods and processes discussed in the present application can be alternated, changed, combined or deleted. Further, other steps, measures and schemes in the various operations, methods and processes discussed in the present application can also be alternated, changed, rearranged, decomposed, combined or deleted. Further, the steps, measures and schemes in the various operations, methods and processes in the prior art can also be alternated, changed, rearranged, decomposed, combined or deleted.

[0074] In the description of the present application, it should be understood that the terms "center", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer" and the like indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings, and are only for the purpose of facilitating the description of the present application and simplifying the description, and do not indicate or imply that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as a limitation of the present application.

[0075] The terms "first", "second" are only for descriptive purposes, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the technical features indicated. Therefore, the features defined with "first", "second" can explicitly or implicitly include one or more of the features. In the description of the present application, unless otherwise stated, the meaning of "a plurality of" is two or more.

[0076] In the description of the present application, it is necessary to point out that, unless otherwise explicitly specified and limited, the terms "mounting", "connection", "linking" should be understood in a broad sense, for example, it can be fixed connection, or detachable connection, or integrally connected; it can be directly connected, or indirectly connected through intermediate medium, or the internal communication of two elements. For those skilled in the art, the specific meaning of the above terms in the present application can be understood according to the specific circumstances.

[0077] In the description of the present application, the specific features, structures, materials or characteristics can be combined in any one or more embodiments or examples in a suitable manner. It should be understood that although each step in the flowchart of the drawings is displayed in sequence according to the direction of the arrow, these steps are not necessarily executed in sequence according to the direction of the arrow. Unless otherwise specified herein, the execution of these steps is not strictly limited in sequence, and they can be executed in other order. Moreover, at least part of the steps in the flowchart of the drawings can include multiple sub-steps or multiple stages, which are not necessarily executed at the same time, but can be executed at different times, and the execution sequence is not necessarily sequential, but can be alternately or alternately executed with other steps or other steps of sub-steps or stages.

[0078] Finally, it should be pointed out that: the above embodiments are only used to illustrate the technical solutions of the present application, and not to limit them; although the present application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that: it can still modify the technical solutions recorded in the foregoing embodiments, or make equivalent replacement for part or all of the technical features; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the scope of the technical solutions of the embodiments of the present application.

Claims

1. A wafer calibration mechanism for a dicing machine, characterized in that, Comprise: a base and a rotating mechanism rotatably arranged on the base; the rotating mechanism comprises a rotating part for placing a wafer and a calibration assembly arranged along the circumference of the rotating part, the calibration assembly comprises a plurality of calibration units which can move radially synchronously along the rotating part, and the side of the calibration unit facing the center of the rotating part is provided with a curved surface structure for cooperating with the edge of the wafer, and in the process of synchronous movement of the plurality of calibration units, the wafer is adjusted to the predetermined position of the rotating part through the guidance of the curved surface structure; the curved surface structure is recessed from the side of the calibration unit facing the center of the rotating part to the side away from the center of the rotating part, for compensating the gap between the edge of the wafer and the calibration unit; the curved surface structure comprises at least a plurality of continuously distributed curved surface segments, the radius of the wafer is R, the corresponding arc surface radius of the lowermost curved surface segment in the plurality of curved surface segments is R, and the corresponding arc surface radius of the remaining plurality of curved surface segments decreases in turn from bottom to top.

2. The wafer calibration mechanism of claim 1, wherein, The corresponding arc surface radius of the remaining plurality of curved surface segments decreases in turn from bottom to top according to the equal ratio series.

3. The wafer calibration mechanism of claim 1, wherein, The radius of the wafer is R, the circular diameter obtained by fitting according to the wafer warping degree is D, and the angle of the edge position of the wafer in the circular diameter direction on the fitting circle relative to the center position of the wafer is A, wherein: R / πD=A / 360°.

4. The wafer calibration mechanism of claim 1, wherein, The rotating part comprises a first rotating member and a second rotating member; the second rotating member is located above the first rotating member and rotates concentrically with the first rotating member, and the first rotating member is rotatably connected with the base; the calibration assembly further comprises a rotating driving part and a plurality of sliding links, the upper surface of the first rotating member is provided with a plurality of radially distributed guide grooves, the second rotating member is provided with an arc-shaped guide groove corresponding to the sliding link, and a positioning column on the sliding link is matched with the arc-shaped guide groove; the calibration unit is arranged on the sliding link, and the rotating driving part is used to drive the second rotating member to rotate relative to the first rotating member, so that the positioning column moves along the track of the arc-shaped guide groove, and the sliding link slides along the guide groove when the calibration unit moves synchronously.

5. The wafer calibration mechanism of claim 4, wherein, The plurality of calibration units slide with the sliding link until the rotating driving part stops at the predetermined stroke position; Alternatively, the calibration unit is provided with a position detection part, which controls the rotating driving part to stop when detecting that the calibration unit moves to the predetermined position.

6. The wafer calibration mechanism of claim 4, wherein, Further comprise: an image detection part, a notch positioning part and a control unit; the image detection part and the notch positioning part are both installed on the base, and the image detection part is used to acquire image information of the wafer; the control unit is used to adjust the rotation angle of the rotating mechanism according to the angle position information between the image information of the wafer and the notch positioning part.

7. A scribe machine characterized by, Comprise: A worktable, a carrying arm for carrying a wafer from a magazine to the wafer calibration mechanism for calibration and carrying the calibrated wafer to the worktable, and the wafer calibration mechanism according to any one of claims 1 to 6.

8. A wafer calibration method based on the wafer calibration mechanism according to any one of claims 1 to 6, characterized by, Comprising: S100, controlling the calibration unit to move synchronously along the direction close to the center of the rotating component; S200, stopping the movement when detecting that the calibration unit reaches a predetermined position; S300, acquiring image information of the wafer located on the rotating component, and adjusting the rotation angle of the rotating component according to the angle position information between the image information and the notch positioning component.

9. A processor, comprising: The processor is configured to run a program, and the program is configured to perform the wafer calibration method according to claim 8 when running.

Images