Apparatus and method for determining mechanical stress distribution in semiconductor material using

Abstract

The invention relates to an apparatus and method for determining a mechanical stress profile in a semiconductor material using a stress sensing structure. Example apparatus and methods for determining a mechanical stress profile in a semiconductor material are provided. An example apparatus includes a set of sensing cells and voltage conversion circuitry. A set of sensing cells is disposed on a surface of the semiconductor material and includes a plurality of stress sensing structures, each stress sensing structure having a different combination of sensing characteristics. Each stress sensing structure detects a component of mechanical stress on the semiconductor material and generates an electrical signal representative of the component of mechanical stress. Voltage conversion circuitry receives an electrical signal representative of a component of mechanical stress from each stress sensing structure and generates a stress voltage representative of the component of mechanical stress. The stress voltages from each stress sensing structure are combined to determine a mechanical stress value representative of a mechanical stress on the semiconductor material at the set of sensing cells.

Description

Technical Field

[0001] Embodiments of this disclosure generally relate to measuring stress in semiconductor materials, and more specifically to mapping mechanical stress distributions using various stress-sensing structures. Background Technology

[0002] Many electrical systems implement electronic circuits fabricated on semiconductor wafers, including, for example, silicon wafers. The processes and packaging associated with semiconductor wafer fabrication can introduce mechanical stresses into the diced portions of the semiconductor wafer (e.g., a die). For example, sawing operations or molding processes can induce mechanical stresses on the semiconductor substrate that includes the die. These mechanical stresses can affect the performance of electronic systems, associated circuitry, and related electrical components.

[0003] The applicant has identified numerous technical challenges and difficulties associated with determining the distribution of mechanical stress in semiconductor materials. Through persistent efforts, ingenuity, and innovation, the applicant has solved the problems associated with determining the distribution of mechanical stress in semiconductor materials by developing the solutions embodied in this disclosure, which will be described in detail below. Summary of the Invention

[0004] Various embodiments relate to example apparatuses and methods for determining the distribution of mechanical stress in a semiconductor material. One example apparatus includes a group of sensing units and a voltage conversion circuit system. The sensing unit group is disposed on a surface of the semiconductor material and includes a plurality of stress-sensing structures, each stress-sensing structure including a different combination of sensing characteristics. The stress-sensing structures are configured to detect components of mechanical stress on the semiconductor material and generate electrical signals representing the components of mechanical stress. The voltage conversion circuit system is configured to receive electrical signals representing the components of mechanical stress from each stress-sensing structure and generate stress voltages representing the components of mechanical stress. The stress voltages from each stress-sensing structure of the sensing unit group are combined to determine a mechanical stress value representing the mechanical stress on the semiconductor material at the sensing unit group.

[0005] In some embodiments, the sensing characteristics include at least one of sensing type, doping type, and orientation.

[0006] In some embodiments, the sensing type includes at least one of the Wheatstone bridge sensing type and the current mirror configuration sensing type.

[0007] In some embodiments, orientation refers to the position of the stress-sensing structure relative to the semiconductor orientation of the semiconductor material.

[0008] In some embodiments, the sensing unit group includes at least: a first stress sensing structure having a Wheatstone bridge sensing type; a second stress sensing structure having a current mirror configuration sensing type including a first plurality of transistors, wherein each of the first plurality of transistors has an n-type doping type; and a third stress sensing structure having a current mirror configuration sensing type including a second plurality of transistors, wherein each of the second plurality of transistors has a p-type doping type.

[0009] In some embodiments, a first portion of the first plurality of transistors is positioned at a 45-degree angle relative to the semiconductor orientation, and a second portion of the second plurality of transistors is positioned at a negative 45-degree angle relative to the semiconductor orientation.

[0010] In some embodiments, a first portion of the second plurality of transistors is positioned at a 0-degree angle relative to the semiconductor orientation, and a second portion of the second plurality of transistors is positioned at a 90-degree angle relative to the semiconductor orientation.

[0011] In some embodiments, the voltage conversion circuit system includes: a first switch configured to enable a first electrical path, the first electrical path being configured to generate a first stress voltage representing a first component of mechanical stress measured by a first stress sensing structure; and a second switch configured to enable a second electrical path, the second electrical path being configured to generate a second stress voltage representing a second component of mechanical stress measured by a second stress sensing structure, wherein the sensing type of the first stress sensing structure is different from the sensing type of the second stress sensing structure.

[0012] In some embodiments, the example device further includes a sensing unit matrix comprising: a plurality of sensing unit groups disposed across the surface of a semiconductor material, wherein a mechanical stress distribution representing mechanical stress on the semiconductor material is determined based on a mechanical stress value at each of the plurality of sensing unit groups.

[0013] In some embodiments, the example apparatus further includes a processor, comprising one or more processors and one or more storage devices storing instructions operable, when executed by the one or more processors, to cause the processor to: receive stress voltages from each stress sensing structure in the sensing unit group, wherein each stress voltage represents a component of mechanical stress; and determine a mechanical stress value at the sensing unit group based on the stress voltages.

[0014] In some embodiments, the processor is further configured to determine the mechanical stress distribution across the semiconductor material based on the mechanical stress value at each sensing unit group.

[0015] In some embodiments, the device further includes a common-mode loop circuit system configured to bias the stress sensing structure based on stress voltage.

[0016] In some embodiments, the common-mode loop circuit system is configured to provide a bias voltage to at least a first stress-sensing structure and a bias current to at least a second stress-sensing structure based on the stress voltage.

[0017] In some embodiments, the example device further includes a microelectromechanical system (MEMS) gyroscope, wherein the output of the MEMS gyroscope is modulated based on mechanical stress on a semiconductor material.

[0018] In some embodiments, the example device further includes a temperature sensor, wherein the mechanical stress is adjusted based on the temperature received from the temperature sensor.

[0019] A method for determining the distribution of mechanical stress on a semiconductor material is also provided. In some embodiments, the method includes receiving stress voltages at a processor from a plurality of stress-sensing structures disposed on a surface of the semiconductor material and including a group of sensing units. In some embodiments, the stress voltages represent components of the mechanical stress on the semiconductor material at the sensing unit group. In some embodiments, each stress-sensing structure including the sensing unit group exhibits a unique combination of sensing characteristics. In some embodiments, the plurality of sensing unit groups are disposed on the surface of the semiconductor material in the form of a sensing unit matrix. The method further includes determining a plurality of mechanical stress values ​​for each sensing unit group including the sensing unit matrix, the plurality of mechanical stress values ​​representing the mechanical stress on the semiconductor material at the sensing unit group; and determining a mechanical stress distribution representing the mechanical stress on the semiconductor material based on the plurality of mechanical stress values.

[0020] In some embodiments, the stress voltage is received from a voltage conversion circuit system configured to receive an electrical signal representing a component of mechanical stress from each stress sensing structure, and to generate a stress voltage representing the component of mechanical stress based on the electrical signal.

[0021] In some embodiments, the sensing characteristics include at least one of sensing type, doping type, and orientation.

[0022] In some embodiments, the sensing type includes at least one of the Wheatstone bridge sensing type and the current mirror configuration sensing type.

[0023] A second example apparatus is also provided. The second example apparatus includes a sensing element and a mechanical stress measuring device. The sensing element includes a material configured to determine the physical properties of an environment based on one or more electrical properties of the material. The mechanical stress measuring device includes a group of sensing units disposed on the surface of a semiconductor material and a voltage conversion circuit system. The sensing unit group includes a plurality of stress sensing structures, each stress sensing structure including a different combination of sensing characteristics and configured to detect a component of mechanical stress on the semiconductor material and generate an electrical signal representing the component of mechanical stress. The voltage conversion circuit system is configured to receive the electrical signal representing the component of mechanical stress from each stress sensing structure and generate a stress voltage representing the component of mechanical stress. The stress voltages from each stress sensing structure of the sensing unit group are combined to determine a mechanical stress value representing the mechanical stress on the semiconductor material at the sensing unit group. The physical properties are adjusted based on the mechanical stress value representing the mechanical stress on the semiconductor material at the sensing unit group. Attached Figure Description

[0024] Referring now to the accompanying drawings. In some embodiments described herein, the components shown in the drawings may or may not be present. According to exemplary embodiments of this disclosure, some embodiments may include fewer (or more) components than those shown in the figures.

[0025] Figure 1 A block diagram of an example stress sensing device according to an example embodiment of the present disclosure is shown;

[0026] Figure 2 A detailed system diagram of an example stress sensing device according to an example embodiment of the present disclosure is shown;

[0027] Figure 3 A circuit-level diagram of an example sensing unit group according to an example embodiment of the present disclosure is shown;

[0028] Figure 4 A circuit level diagram of an example current and / or voltage to voltage conversion circuit system according to an example embodiment of the present disclosure is shown;

[0029] Figure 5 An example electrical path through an example current and / or voltage to voltage conversion circuit system according to an example embodiment of the present disclosure is shown;

[0030] Figure 6 A circuit-level diagram of an example common-mode loop circuit system according to an example embodiment of the present disclosure is shown;

[0031] Figure 7 An example stress sensing device configured to compensate for temperature is shown according to an example embodiment of the present disclosure;

[0032] Figure 8An example electrical system according to an exemplary embodiment of the present disclosure is shown, the example electrical system including a sensing element configured to modify observation data based on the output of a stress sensing device;

[0033] Figure 9 A flowchart is shown for a process of determining the distribution of mechanical stress in a semiconductor material according to an example embodiment of the present disclosure;

[0034] Figure 10 An example mechanical stress distribution in a semiconductor material, determined according to an example embodiment of the present disclosure, is shown; and

[0035] Figure 11 A block diagram depicting an example component of a digital signal processor (DSP) according to an example embodiment of the present disclosure is shown. Detailed Implementation

[0036] Example embodiments will now be described more fully with reference to the accompanying drawings, which illustrate some, but not all, embodiments of the invention disclosed herein. In fact, embodiments of the present disclosure may be embodied in many different forms and should not be construed as limited to the embodiments described herein; rather, these embodiments are provided so that the present disclosure may meet applicable legal requirements. The same numerals always refer to the same elements.

[0037] Various example embodiments address technical problems associated with determining mechanical stress in semiconductor materials, such as semiconductor materials including sensing elements configured to determine the physical properties of the surrounding environment based on the electrical properties of the semiconductor material. As those skilled in the art to which this disclosure pertains will understand, there are numerous example scenarios in which sensing elements or other electrical components can benefit from accurately mapping mechanical stress on semiconductor materials.

[0038] For example, many electrical systems implement electronic circuits on semiconductor dies cut from manufactured semiconductor wafers. The processes and packaging associated with semiconductor wafer manufacturing can introduce mechanical stresses onto the semiconductor die. For instance, sawing operations or molding processes can cause mechanical stresses on the semiconductor substrate of the die. This stress can affect the performance of electronic systems, related circuits, and associated electrical components.

[0039] Microelectromechanical systems (MEMS) gyroscopes are example electrical systems subjected to variations in mechanical stress. During operation, a MEMS gyroscope can determine its physical orientation and / or motion, such as yaw, pitch, roll, forward, backward, left, right, etc., based on the electrical properties of the semiconductor materials comprising the gyroscope. MEMS gyroscopes can be affected by environmental variations, such as temperature changes, packaging stress, aging, etc. These environmental variations can induce mechanical stress on the MEMS gyroscope, thereby affecting its performance.

[0040] Therefore, stress sensing devices can be integrated into electrical systems (e.g., MEMS gyroscopes) to characterize the mechanical stresses acting on the semiconductor materials constituting the sensing element. Stress sensing devices that are easy to operate, provide high sensitivity, and can be arranged to measure large structures may be required. By compensating for measurements based on mechanical stresses determined in a mechanical stress distribution, the performance of the sensing element (e.g., a MEMS gyroscope) can be improved by utilizing the determined mechanical stress distribution on the semiconductor material.

[0041] In some examples, individual stress-sensing structures are positioned on the surface of a semiconductor material to determine the mechanical stress on the semiconductor. However, a single stress-sensing structure cannot capture the distribution of mechanical stress. Furthermore, a single stress-sensing structure cannot provide an accurate measurement of the stress on the semiconductor material. Inaccurate stress measurements prevent adequate compensation by utilizing the electrical properties of the semiconductor material for the measurements taken by the sensing element.

[0042] The various example embodiments described herein utilize various techniques to ensure accurate determination of the mechanical stress distribution on a semiconductor material. For example, a stress sensing device according to this disclosure includes multiple sensing unit groups distributed on the surface of a semiconductor material. Each sensing unit group includes multiple stress sensing structures. The stress sensing structures may include various stress sensing types, doping types, orientations, and other sensing characteristics. Variations in sensing characteristics enable the measurement of individual components of the mechanical stress at a specific location.

[0043] For example, a stress-sensing structure designed according to a Wheatstone bridge sensing type can be configured to determine the sum of mechanical stresses at a specific location in orthogonal directions. Similarly, a stress-sensing structure designed according to a current mirror configuration sensing type can be configured to determine the difference of mechanical stresses in orthogonal directions. Furthermore, the orientation of the stress-sensing structure can be rotated to detect mechanical stresses on the semiconductor material in various directions. Additionally, the doping type of the stress-sensing structure can be changed to alter the sensitivity of a particular stress-sensing structure. Each change in sensing characteristics enables the determination of individual components of the mechanical stresses on the semiconductor material.

[0044] By utilizing the various components of each stress-sensing structure within a sensing unit group, it becomes possible to determine a sensing unit value representing the mechanical stress on the semiconductor material at the sensing unit group. Distributing multiple sensing unit groups across the surface of the semiconductor material in the form of a sensing unit matrix allows for the determination of the sensing unit distribution across the semiconductor material.

[0045] As a result of the exemplary embodiments described herein, in some examples, the accuracy of mechanical stress measurements on semiconductor materials can be significantly improved. Furthermore, the accuracy and reliability of sensing elements based on the electrical properties of semiconductor materials can be greatly improved.

[0046] Now for reference Figure 1 A block diagram of an example stress sensing device 100 is provided. For example... Figure 1 As shown, the example stress sensing device 100 includes a sensing unit matrix 102 electrically coupled to a front-end conversion circuit system 104, which is configured to transmit an electrosensing signal 103 and receive a bias signal 113. The transmission of electrical signals (e.g., electrosensing signal 103, bias signal 113) between the sensing unit matrix 102 and the front-end conversion circuit system 104 is managed by a matrix configuration signal 101 and a front-end configuration signal 105 transmitted by sensing unit control logic 106. Figure 1 As further shown, an analog-to-digital converter (ADC) 108 is electrically coupled to a front-end conversion circuit system 104. The ADC 108 is configured to receive an output stress voltage 107 from the front-end conversion circuit system 104 and generate a digital stress voltage to be transmitted to an electrically coupled digital signal processor (DSP) 110. The DSP 110 generates a mechanical stress distribution 111 based at least in part on the digital stress voltage 109.

[0047] like Figure 1 As shown, the example stress sensing device 100 includes a sensing unit matrix 102. The sensing unit matrix 102 includes a plurality of stress sensing structures distributed on the surface of a semiconductor material. (As shown in the diagram...) Figure 2 The stress sensing structure of the sensing unit matrix 102 is organized into sensing unit groups. These sensing unit groups can be distributed across the surface of the semiconductor material to maximize surface coverage. For example, in some embodiments, the sensing unit matrix may include multiple sensing unit groups organized in rows and columns across the surface of the semiconductor.

[0048] The sensing unit matrix 102 includes one or more electrical connections to the front-end conversion circuit system 104 to facilitate the transmission of an electrosensing signal 103 corresponding to each stress sensing structure including the sensing unit matrix 102.

[0049] like Figure 1As further shown, the example stress sensing device 100 includes sensing unit control logic 106. Sensing unit control logic 106 includes a circuit system comprising hardware and / or software configured to manage the electrosensing signal 103 output from the sensing unit matrix 102 and / or the bias signal 113 received at the sensing unit matrix 102. Sensing unit control logic 106 can manage the exchange of electrical signals by transmitting electrical configuration signals (e.g., matrix configuration signal 101, front-end configuration signal 105) to the sensing unit matrix 102 and the front-end conversion circuit system 104. Matrix configuration signal 101 can determine the stress sensing structure to which its electrosensing signal is transmitted. For example, matrix configuration signal 101 can sequentially enable electrical paths from each stress sensing structure including the sensing unit matrix 102. Furthermore, sensing unit control logic 106 can utilize front-end configuration signal 105 to configure the voltage conversion circuit system and common-mode loop circuit system based on the sensing type of the selected stress sensing structure. The voltage conversion circuit system and common-mode loop circuit system will be combined... Figures 4-6 Further description.

[0050] like Figure 1 As further illustrated, the example stress sensing device 100 includes a front-end conversion circuitry system 104. The front-end conversion circuitry system 104 includes hardware and / or software configured to generate an output stress voltage 107 based on an inductively sensed signal 103 received from a stress sensing structure. The front-end conversion circuitry system 104 is configured to receive the inductively sensed signal 103 from each stress sensing structure sensing type and generate the output stress voltage 107, which represents a component or combination of components of the mechanical stress detected by a particular stress sensing structure. For example, the generation of the output stress voltage 107 based on the inductively sensed signal 103 may depend on the sensing type of the stress sensing structure. A stress sensing structure including a Wheatstone bridge sensing type may generate an inductively sensed signal 103 in which voltage changes indicate a component of the mechanical stress. However, a stress sensing structure including a current mirror configuration sensing type may generate an inductively sensed signal 103 in which current changes indicate a component of the mechanical stress.

[0051] The front-end conversion circuit system 104 is configured to generate an output stress voltage 107 representing each sensing type. For example... Figure 4 As further shown, the voltage conversion circuitry of the front-end conversion circuitry system 104 includes multiple electrical paths that can be configured based on the sensing type of the stress sensing structure. By including a conversion circuitry system for each sensing type in a single circuit, the stress sensing device 100 can be implemented with a limited area.

[0052] Furthermore, the front-end conversion circuit system 104 is configured to generate a bias signal 113 based on the output stress voltage 107. The bias signal 113 is transmitted to the corresponding stress sensing structure to bias the stress sensing structure, thereby enabling the sensing unit matrix 102 to operate under appropriate bias conditions and improving the output stress voltage 107 derived from the inductive signal 103. Figure 6 As further shown, the common-mode loop circuitry of the front-end conversion circuitry 104 includes multiple electrical paths that can be configured based on the sensing type of the stress sensing structure. By including a common-mode bias circuitry for each sensing type in a single circuit, the stress sensing device 100 can be implemented with a limited area.

[0053] like Figure 1 As further shown, the example stress sensing device 100 includes an ADC 108. The ADC 108 includes a circuitry configured to convert analog signals such as voltage, light, and sound into digital signals that can be processed by the DSP 110. As described herein, the ADC 108 of the example stress sensing device 100 can receive and output a stress voltage 107 representing a component of mechanical stress at a location in the semiconductor material, and output a digital stress voltage 109 representing the output stress voltage 107 in digital form.

[0054] like Figure 1 As further illustrated, the example stress sensing device 100 includes a DSP 110. The DSP 110 includes one or more processors and associated circuitry configured to receive a plurality of digital stress voltages 109 and generate a mechanical stress distribution 111 based on the plurality of digital stress voltages 109. For example, the DSP 110 may be configured to receive a digital stress voltage 109 associated with each stress sensing structure in a group of sensing units. Based on the sensing type, doping type, and / or orientation of the stress sensing structure, the DSP 110 may combine the digital stress voltages 109 to determine a mechanical stress value.

[0055] The mechanical stress value indicates the mechanical stress measured at the location of the sensing unit group. The mechanical stress value can be determined based on a combination of components of the mechanical stress measured by each stress sensing structure. For example, a first stress sensing structure of the sensing unit group can be configured to determine mechanical stress in a planar direction, a second stress sensing structure of the sensing unit group can be configured to determine mechanical stress in a second planar direction, and a third stress sensing structure of the sensing unit group can be configured to determine mechanical stress in a third planar direction. The DSP 110 can be configured to combine the mechanical stresses and determine a mechanical stress value representing the mechanical stress at the sensing unit group. In another example, the first stress sensing structure of the sensing unit group can be configured to determine the sum of mechanical stresses in two orthogonal planar directions, the second stress sensing structure of the sensing unit group can be configured to determine the difference of mechanical stresses in two orthogonal planar directions, and the third stress sensing structure of the sensing unit group can be configured to determine a portion of the mechanical stress, such as shear stress, in an orientation different from the first two stress sensing structures. Again, the DSP 110 can be configured to combine the mechanical stresses and determine a mechanical stress value representing the mechanical stress at the sensing unit group.

[0056] like Figure 1 Further shown, DSP 110 is configured to generate a mechanical stress distribution 111. The mechanical stress distribution 111 is a representation of mechanical stress across the semiconductor material. In some embodiments, multiple sensing unit groups may be distributed across the surface of the semiconductor material. DSP 110 may utilize digital stress voltages 109 from each stress sensing structure to determine the mechanical stress value at each sensing unit group. Furthermore, DSP 110 may correlate the mechanical stress values ​​with physical locations on the surface of the semiconductor material. For example, the mechanical stress values ​​may be correlated with rows and columns in a sensing unit matrix 102, and the mechanical stress values ​​may be stored in a data structure, such as a two-dimensional array, based on the physical location of the sensing unit groups. DSP 110 may be configured to determine the mechanical stress distribution 111 based on multiple mechanical stress values ​​observed by each sensing unit group. In some embodiments, DSP 110 may be configured to predict the mechanical stress distribution 111 of a region on the surface of the semiconductor material between sensing unit groups based on the mechanical stress values ​​of nearby sensing unit groups. Example mechanical stress distribution 111 combined with... Figure 10 Further description.

[0057] Now for reference Figure 2 An example embodiment of the stress sensing device 100 is provided. For example... Figure 2As shown, the stress sensing device includes a sensing unit matrix 102, which includes multiple sensing unit groups 220, each sensing unit group including multiple stress sensing structures 222. The sensing unit matrix 102 is disposed on the surface of a semiconductor material 218. The sensing unit matrix 102 is configured to transmit an electrosensing signal 103 to a front-end conversion circuit system 104 based on the mechanical stress on the semiconductor material 218. The front-end conversion circuit system 104 includes a voltage conversion circuit system 224 configured to receive the electrosensing signal 103 and generate a stress voltage 225. The front-end conversion circuit system 104 also includes a voltage gain circuit system 226 configured to receive the stress voltage 225 and generate an amplified output stress voltage 107. Furthermore, the front-end conversion circuit system 104 includes a common-mode loop circuit system 228 configured to generate a bias signal 113 based on the stress voltage 225 and the sensing type of the stress sensing structures 222. Figure 2 As further shown, the example stress sensing device 100 includes sensing unit control logic 106 configured to configure the sensing unit matrix 102 using a matrix configuration signal 101 and to configure the front-end conversion circuit system 104 using a front-end configuration signal 105. Figure 2 The stress sensing device 100 also includes an ADC 108 configured to receive an output stress voltage 107 and generate a digital stress voltage 109. For example... Figure 2 As shown, the DSP 110 generates the mechanical stress distribution 111 based on the mechanical stress value derived from the digital stress voltage 109.

[0058] like Figure 2 As shown, the example stress sensing device 100 includes a semiconductor material 218 and a sensing unit matrix 102 disposed on the surface of the semiconductor material 218. The semiconductor material 218 includes any material having electrical properties between a conductor and an insulator. Many electrical systems use the semiconductor material 218 to implement electrical components. The conductivity of the semiconductor material 218 can change based on the presence or absence of voltage. Furthermore, some sensing elements can utilize changes in the electrical properties of the semiconductor material 218 to determine the physical characteristics of the surrounding environment. For example, the resistance of a portion of the semiconductor material 218 can change in an instance where pressure is present on the surface of the semiconductor material 218. The change in resistance can be detected using an electrical signal and analyzed to determine the pressure of the surrounding environment. Similarly, a temperature sensor can utilize changes in the electrical properties of the semiconductor material 218 to determine the temperature of the surrounding environment. Furthermore, a MEMS gyroscope can utilize changes in the electrical properties of the semiconductor material 218 to determine the angular velocity of the semiconductor material.

[0059] like Figure 2As shown, sensing unit group 220 can be distributed on the surface of semiconductor material 218 to determine the mechanical stress value at the location of sensing unit group 220 on the surface of semiconductor material 218. Sensing unit group 220 includes multiple stress sensing structures 222, each exhibiting a different set of sensing characteristics. Some example sensing characteristics may include sensing type, doping type, and orientation.

[0060] The sensing type and sensing characteristics refer to the electrical structure used by the stress sensing structure 222 to determine mechanical stress. For example, a Wheatstone bridge sensing type can be used to measure the components of mechanical stress in semiconductor material 218. In another example, a current mirror configuration sensing type can be used to measure the components of mechanical stress in semiconductor material 218. A combination of Wheatstone bridge sensing type and current mirror configuration sensing type... Figure 3 To describe.

[0061] The doping type sensing characteristics can also be varied within the sensing unit group 220 to adjust the component of the mechanical stress measured by the stress sensing structure 222. For example, the doping type may affect the sensitivity of the stress sensing structure 222. In some instances, the p-type or n-type transistors can be changed to adjust the sensitivity of the stress sensing structure 222. In some embodiments, a single sensing unit group 220 may include a stress sensing structure 222 comprising a p-type transistor and a stress sensing structure 222 comprising an n-type transistor.

[0062] Orientation sensing characteristics can also be varied within sensing unit group 220 to modulate the component of mechanical stress measured by stress sensing structure 222. Orientation is the relative position of one or more components of stress sensing structure 222 with respect to the orientation of semiconductor material 218. In some embodiments, the component of mechanical stress in semiconductor material 218 can be changed based on the orientation of electrical components including stress sensing structure 222. For example, when mechanical stress parallel to a transistor channel is applied, the channel of the transistor including stress sensing structure 222 may contract, thereby altering the electrical properties of stress sensing structure 222. However, in instances where the electrical components of stress sensing structure 222 rotate on the surface of semiconductor material 218, different portions of mechanical stress parallel to the new orientation of the stress sensing structure can be measured. Furthermore, in some instances, polycrystalline structures can be used to minimize sensitivity to stress orientation. Utilizing sensing unit group 220, which includes stress sensing structures 222 with different sensing characteristics, ensures that different portions of mechanical stress in specific regions of semiconductor material 218 are accurately measured.

[0063] like Figure 2As further shown, the inductive signal 103 is transmitted from the sensing unit matrix 102 on the semiconductor material 218 to the front-end conversion circuit system 104. The inductive signal 103 originates from one of the stress sensing structures 222 in the sensing unit matrix 102. The sensing unit control logic 106 transmits a matrix configuration signal 101 from each stress sensing structure 222 including the sensing unit matrix 102 to configure the sensing unit matrix 102. For example, the sensing unit control logic 106 may configure the sensing unit matrix 102 to sequentially transmit the inductive signal 103 from each stress sensing structure 222.

[0064] Due to variations in the sensing characteristics (e.g., sensing type, doping type, orientation) of the stress sensing structure 222 within the sensing unit group 220, the mechanical stress information derived from the electrosensing signal 103 can vary based on a specific stress sensing structure 222. For example, a stress sensing structure 222 including a Wheatstone bridge sensing type can be based on a voltage change in the electrosensing signal 103 caused by mechanical stress. Alternatively, a stress sensing structure 222 including a current mirror configuration sensing type can be based on a current change in the electrosensing signal 103 caused by mechanical stress.

[0065] like Figure 2 As further shown, the front-end conversion circuit system 104 includes a voltage conversion circuit system 224. The voltage conversion circuit system 224 includes hardware and / or software configured to receive the inductive signal 103 and generate a stress voltage 225 corresponding to the mechanical stress measured by the stress sensing structure 222. As described herein, the mechanical stress measurement can vary based on the sensing characteristics of the stress sensing structure 222. For example, some stress sensing structures 222 may indicate mechanical stress based on voltage changes in the inductive signal 103, while others may indicate mechanical stress based on current changes in the inductive signal 103. The voltage conversion circuit system 224 is configured to generate the stress voltage 225 regardless of the sensing characteristics of the stress sensing structure 222. For example, in some embodiments, the voltage conversion circuit system 224 may be configured to convert changes in current into a stress voltage 225. Specific embodiments of the voltage conversion circuit system 224 are described in conjunction with… Figure 4 Further description.

[0066] like Figure 2 As further shown, the sensing unit control logic 106 can transmit one or more front-end configuration signals 105 to coordinate the configuration of the voltage conversion circuit system 224 with the stress sensing structure 222 selected based on the matrix configuration signal 101. For example, the sensing unit control logic 106 can enable and / or disable one or more switches within the voltage conversion circuit system 224 to establish an electrical path through the voltage conversion circuit system 224 based on the stress sensing structure 222.

[0067] like Figure 2 As further shown, the front-end conversion circuit system 104 includes a voltage gain circuit system 226. The voltage gain circuit system 226 includes any circuitry comprising hardware and / or software configured to amplify a stress voltage 225 representing the mechanical stress received from the stress sensing structure 222 by the voltage conversion circuit system 224. The voltage gain circuit system 226 can utilize any electrical components, such as operational amplifiers, transistors, feedback resistors, input resistors, bias voltage sources, boost circuit systems, etc. Example embodiments of the voltage gain circuit system 226 are combined with... Figure 4 Describe it.

[0068] like Figure 2 As further shown, the front-end conversion circuitry system 104 includes a common-mode loop circuitry system 228. The common-mode loop circuitry system 228 includes circuitry comprising hardware and / or software configured to generate a common-mode signal (e.g., a bias signal 113) at each stress sensing structure 222 of the sensing unit matrix 102 during measurement. The common-mode loop circuitry system 228 can be configured to derive the bias signal 113 from the stress voltage 225 generated by the voltage conversion circuitry system 224. Similar to the voltage conversion circuitry system 224, the bias signal 113 can depend on the sensing characteristics of the expected stress sensing structure 222. For example, some stress sensing structures 222 can be configured to receive a bias current, while others can be configured to receive a bias voltage. The sensing unit control logic 106 can be configured to coordinate the configuration of the common-mode loop circuitry system 228 with the measured stress sensing structure 222. An example embodiment of the common-mode loop circuitry system 228 is described in conjunction with... Figure 6 Further description.

[0069] Now for reference Figure 3 Non-limiting examples of stress sensing structures 332-336 are provided. Although three stress sensing structures 332-336 are depicted, any stress sensing structure can be used in the sensing unit group 220. Furthermore, the sensing characteristics of each stress sensing structure can vary in a variety of ways, such as sensing type, doping type, and sensing orientation.

[0070] like Figure 3 As shown, the stress sensing structure 332 includes a Wheatstone bridge sensing type with zero-degree orientation relative to the semiconductor orientation 338. This sensing type includes sensing resistor elements 332a-332d with p-type doping and sensing resistor elements 332e-332h with n-type doping.

[0071] like Figure 3As shown, the stress sensing structure 332 includes a Wheatstone bridge sensing type. The Wheatstone bridge sensing type utilizes multiple resistive elements to convert the resistance of a semiconductor material into a voltage (e.g., inductive signal 103a). When the semiconductor material experiences mechanical stress, it can be compressed and / or expanded. This compression and expansion can change the resistance of the semiconductor material. By arranging multiple resistive elements in a Wheatstone bridge configuration and applying a bias voltage (e.g., bias signal 113a), this resistance can be converted into a voltage (e.g., inductive signal 103a). Therefore, the mechanical stress on the semiconductor material can be derived from the inductive signal 103a.

[0072] like Figure 3 As shown, the stress-sensing structure 332 includes four pairs of L-shaped resistive elements (332a, 332b; 332c, 332d; 332e, 332f; 332g, 332h). Two of the four pairs of resistive elements (332a, 332b; 332c, 332d) are p-type doped. Changing the doping type and concentration may affect the sensing characteristics of the stress-sensing structure 332. For example, p-type doped resistive elements 332a, 332b, 332c, and 332d can be more sensitive to changes in the resistivity of the semiconductor material. Figure 3 As further shown, two of the four pairs of resistive elements (332e, 332f; 332g, 332h) are n-type doped. The n-type doped resistive elements 332e, 332f, 332g, and 332h can at least partially alter their sensitivity to changes in the resistivity of the semiconductor material based on the piezoresistive coefficients involved.

[0073] Various sensing characteristics of the stress sensing structure 332 can be varied. For example, the stress sensing structure 332 can be configured with two pairs of L-shaped resistive elements. Furthermore, the doping type and / or doping concentration of the resistive elements can be adjusted. Additionally, the orientation of the resistive elements 332a, 332b, 332c, 332d, 332e, 332f, 332g, and 332h relative to the semiconductor orientation 338 can be adjusted. For example, as shown, the orientation of resistive elements 332a, 332d, 332e, and 332h is 0 degrees relative to the semiconductor orientation 338, while the orientation of resistive elements 332b, 332c, 332f, and 332g is 90 degrees relative to the semiconductor orientation 338. However, the orientation of resistive elements 332a, 332b, 332c, 332d, 332e, 332f, 332g, and 332h can be adjusted so that resistive elements 332a, 332d, 332e, and 332h are at a 45-degree angle relative to semiconductor orientation 338, while resistive elements 332b, 332c, 332f, and 332g are at a 315-degree angle relative to semiconductor orientation 338.

[0074] Changes in sensing characteristics can enable the detection of various components of mechanical stress on the semiconductor material at the location of the stress sensing structure 332, thereby improving the determination of the mechanical stress value at that location. For example, Figure 3 As shown, the stress sensing structure 332 is optimized to detect the sum of the mechanical stress at the stress sensing structure 332 in the x-direction relative to the semiconductor orientation 338 and the mechanical stress in the y-direction relative to the semiconductor orientation 338. In some embodiments, the determination of the mechanical stress represented by the stress sensing structure 332 shown can be expressed by equation (1):

[0075]

[0076] Where σ xx It is the mechanical stress in the x-direction relative to semiconductor orientation 338; σ yy It is the mechanical stress in the y-direction relative to semiconductor orientation 338; V O This represents the voltage (inductive signal 103a) indicating the mechanical stress on the semiconductor material; V BIAS It is the bias voltage (e.g., bias signal 113) provided to the stress sensing structure 332; and The piezoresistive characteristics of the doped silicon material for the corresponding sensing element pairs (332g, 332h; 332e, 332f; 332c, 332d; 332a, 332b) are represented.

[0077] like Figure 3 As further shown, the stress sensing structure 334 includes an n-type doped current mirror configuration sensing type oriented at 45° / 315°. Similarly, the stress sensing structure 336 includes a p-type doped current mirror configuration sensing type oriented at 0° / 90°. The current mirror configuration sensing type utilizes multiple transistors 334a, 334b, 334c, 334d; 336a, 336b, 336c, 336d arranged in a current mirror configuration to detect changes in current within the semiconductor material. Changes in current can indicate mechanical stress on the semiconductor material at the stress sensing structures 334, 336. Inductively sensed signals 103b, 103c can be generated from the source terminals of the transistors 334a, 334b, 334c, 334d, 336a, 336b, 336c, 336d, including the current mirror configuration. Figure 3 As further shown, the gate voltage at each of transistors 334a, 334b, 334c, 334d, 336a, 336b, 336c, and 336d is biased according to a bias voltage (e.g., bias signals 113b and 113c). The mechanical stress on the semiconductor can be measured based on changes in the inductive signals 103b and 103c. For example, changes in the current of the inductive signals 103b and 103c.

[0078] like Figure 3 As further shown, stress sensing structure 334 is oriented at 45° / 315°, while stress sensing structure 336 is oriented at 0° / 90°. The change in orientation of stress sensing structures 334 and 336 allows for the detection of various components of mechanical stress on the semiconductor material at the locations of stress sensing structures 334 and 336, thereby improving the determination of the mechanical stress value at those locations. For example, the change in orientation of stress sensing structures 334 and 336 alters the angle of the transistor channels, including transistors 334a, 334b, 334c, 334d, 336a, 336b, 336c, and 336d, resulting in variations in the compression and expansion of the transistor channels based on orientation. For example, as... Figure 3 As shown, the orientation of the stress sensing structure 336 is optimized to detect the difference between the mechanical stress at the stress sensing structure 336 in the x-direction relative to the semiconductor orientation 338 and the mechanical stress at the stress sensing structure 336 in the y-direction relative to the semiconductor orientation 338. Furthermore, the orientation of the stress sensing structure 334 is optimized to detect the shear mechanical stress at the stress sensing structure 334.

[0079] like Figure 3 As further shown, stress sensing structure 334 includes transistors 334a, 334b, 334c, and 334d with n-type doping, while stress sensing structure 336 includes transistors 336a, 336b, 336c, and 336d with p-type doping. The doping type of stress sensing structures 334 and 336 can be changed to alter their sensitivity. Each change in the sensing characteristics of stress sensing structures 332, 334, and 336 enables the determination of various components of the mechanical stress on the semiconductor material at stress sensing structures 332, 334, and 336.

[0080] like Figure 3 As shown, the stress sensing structure 334 is optimized to detect shear mechanical stress relative to the semiconductor orientation 338 of the semiconductor material. In some embodiments, the determination of the mechanical stress represented by the stress sensing structure 334 shown can be expressed by equation (2):

[0081]

[0082] I CM =(I A +I B +I C +I D ) / 4

[0083] Equation (3)

[0084] Where σ xyIt is shear mechanical stress; I A I B I C and I D It is the current at the corresponding source terminals of transistors 334a, 334b, 334c, and 334d; This corresponds to the piezoresistive characteristics of n-doped silicon materials in the current mirror.

[0085] like Figure 3 As shown, the stress sensing structure 336 is optimized to detect the difference between the mechanical stress at the stress sensing structure 336 in the x-direction relative to the semiconductor orientation 338 and the mechanical stress in the y-direction relative to the semiconductor orientation 338. In some embodiments, the determination of the mechanical stress represented by the stress sensing structure 336 shown can be expressed by equation (4):

[0086]

[0087] Where σ xx It is the mechanical stress in the x-direction relative to semiconductor orientation 338; σ yy It is the mechanical stress in the y-direction relative to semiconductor orientation 338; I A I B I C and I D It is the current at the corresponding source terminals of transistors 336a, 336b, 336c, and 336d; This refers to the piezoresistive characteristics of p-doped silicon materials in a current mirror.

[0088] Now for reference Figure 4 An example embodiment of a voltage conversion circuit system 224 electrically coupled to the sensing unit matrix 102 and the voltage gain circuit system 226 is provided. Figure 4 As shown, the sensing unit matrix 102 is configured to generate an electrosensing signal 103 from each stress sensing structure 332, 334, 336 of the sensing unit group 220, which includes a plurality of sensing unit groups 220. The voltage conversion circuit system 224 is also configured to generate a stress voltage 225 representing a component of the mechanical stress detected by the stress sensing structures 332, 334, 336. The voltage conversion circuit system 224 is configurable, for example, by sensing unit control logic (e.g., sensing unit control logic 106), to generate the stress voltage 225 based on the sensing characteristics of the stress sensing structures 332, 334, 336. Figure 4 As further shown, the voltage gain circuit system 226 is configured to transmit and / or amplify the stress voltage 225 and generate an output stress voltage 107.

[0089] like Figure 4As shown, the voltage conversion circuit system 224 includes a switch 440 that directly electrically couples the positive terminal 103p of the inductive signal 103 to the positive terminal 225p of the stress voltage 225 generated by the front-end conversion circuit system 244. Furthermore, the voltage conversion circuit system 224 includes a switch 442 that directly electrically couples the negative terminal 103n of the inductive signal 103 to the negative terminal 225n of the stress voltage 225 generated by the front-end conversion circuit system 244.

[0090] like Figure 4 As further shown, the voltage conversion circuit system 224 includes an n-type transistor 412 having a source terminal 412s electrically coupled to the negative terminal 103n of the inductive signal 103 and the drain terminal 414d of the p-type transistor 414; a gate terminal 412g electrically coupled to the second terminal 404b of the resistor 404, the input terminal of the current source 406, and the gate terminal 418g of the n-type transistor 418; and a drain terminal 412d electrically coupled to the source terminal 414s of the transistor 414. Figure 4 As further shown, the first terminal 404a of resistor 404 is electrically coupled to switches 402a and 402b, switch 402a being electrically coupled to voltage source 408 and switch 402b being electrically coupled to ground 410. The output terminal of current source 406 is electrically coupled to ground 410.

[0091] like Figure 4 As further shown, the gate terminal 414g of transistor 414 is electrically coupled to the gate terminal 416g of p-type transistor 416, the first terminal 424a of resistor 424, and the output terminal of current source 422; the source terminal 414s of transistor 414 is also electrically coupled to the first terminal 430a of resistor 430 and the negative terminal 225n of stress voltage 225. The input terminal of current source 422 is electrically coupled to voltage source 408. The drain terminal 416d of transistor 416 is electrically coupled to the positive terminal 103p of inductive signal 103 and the source terminal of transistor 418; the source terminal 416s is electrically coupled to the positive terminal 225p of stress voltage 225, the drain terminal 418d of transistor 418, and the first terminal 434a of resistor 434.

[0092] Example voltage conversion circuit system 224 also includes a switch 420 electrically coupled to a second terminal 424b of voltage source 408 and resistor 424; and a switch 426 electrically coupled to ground 410 and the second terminal 424b of resistor 424.

[0093] like Figure 4As further shown, the second terminal of resistor 430 is electrically coupled to switch 428, and also electrically coupled to the first terminal 432a of switch 432, which is electrically coupled to voltage source 408. The second terminal 432b of switch 432 is electrically coupled to ground 410 and the second terminal 436b of switch 436. The second terminal 434b of resistor 434 is electrically coupled to switch 438, which is electrically coupled to voltage source 408. The second terminal 434b of resistor 434 is also electrically coupled to the first terminal 436a of switch 436.

[0094] Figure 4 Example embodiments of the voltage gain circuit system 226 are also provided. For example... Figure 4 As shown, the voltage gain circuit system 226 receives the stress voltage 225 as input at the positive terminal 225p and the negative terminal 225n. The voltage gain circuit system 226 is configured to output the stress voltage 107 at the positive terminal 107p and the negative terminal 107n.

[0095] like Figure 4 As shown, the example voltage gain circuit system 226 includes a first operational amplifier 444a, which includes a positive input terminal 444a_p, a negative input terminal 444a_n, and an output terminal 444a_o. The example voltage gain circuit system 226 also includes a second operational amplifier 444b, which includes a positive input terminal 444b_p, a negative input terminal 444b_n, and an output terminal 444b_o. The positive terminal 225p of the stress voltage 225 is electrically coupled to the positive input terminal 444a_p of the operational amplifier 444a. The negative input terminal 444a_n of the operational amplifier 444a is electrically coupled to the first terminal 446a of the variable resistor 446. The second terminal 446b of the variable resistor 446 is electrically coupled to the output terminal 444a_o of the first operational amplifier 444a. The output terminal 444a_o of the first operational amplifier 444a is also electrically coupled to the positive terminal 107p of the output stress voltage 107. The negative terminal 225n of the stress voltage 225 is electrically coupled to the positive input terminal 444b_p of the operational amplifier 444b. The negative input terminal 444b_n of the operational amplifier 444ab is electrically coupled to the first terminal 448a of the variable resistor 448. The second terminal 448b of the variable resistor 448 is electrically coupled to the output terminal 444b_o of the second operational amplifier 444b. The output terminal 444b_o of the second operational amplifier 444b is also electrically coupled to the negative terminal 107n of the output stress voltage 107.

[0096] Now for reference Figure 5 ,like Figure 4The three different circuits 552, 554, and 556 within the illustrated voltage conversion circuit system can be enabled based on the sensing characteristics of the activated stress sensing structures (e.g., stress sensing structures 332, 334, and 336). For example, in an instance where a stress sensing structure of the Wheatstone bridge sensing type (e.g., stress sensing structure 332) is enabled, the first electrical path 552 can be enabled. In an instance where a stress sensing structure with a current mirror configuration including an n-type transistor (e.g., stress sensing structure 334) is enabled, the second electrical path 554 can be enabled. In an instance where a stress sensing structure with a current mirror configuration including a p-type transistor (e.g., stress sensing structure 336) is enabled, the third electrical path 556 can be enabled. In some embodiments, the sensing unit control logic 106 can co-enable the corresponding electrical path 552 with the activation of stress sensing structures 332, 334, and 336.

[0097] like Figure 5 As shown, the first electrical path 552 can be enabled by closing switches 440 and 442 while simultaneously opening switches 402a, 402b, 420, 426, 428, 432, and 436. Closing switches 440 and 442 directly transmits the inductive signal 103 to the stress voltage 225 output. In instances where mechanical stress causes a voltage change in the inductive signal 103, the first electrical path 552 can be enabled, for example, by using a stress sensing structure similar to stress sensing structure 332.

[0098] like Figure 5 As further shown, the second electrical path 554 can be enabled by closing switches 402a, 402b, 428, and 438 while simultaneously opening switches 420, 426, 432, 436, 440, and 442. Closing switches 402a, 402b, 428, and 438 will utilize an n-type transistor to generate a stress voltage 225 representing the mechanical stress measured at the stress sensing structure. In instances where the mechanical stress causes a change in current in the inductive signal 103 and the stress sensing structure utilizes an n-type electrical component, the second electrical path 554 can be enabled, for example, by using a stress sensing structure similar to stress sensing structure 334.

[0099] like Figure 5As further shown, the third electrical path 556 can be enabled by closing switches 420, 426, 432, and 436 while simultaneously opening switches 402a, 402b, 428, 438, 440, and 442. Closing switches 420, 426, 432, and 436 will utilize p-type transistors to generate a stress voltage 225 representing the mechanical stress measured at the stress sensing structure. The third electrical path 556 can be enabled in instances where the mechanical stress causes a change in current in the inductive signal 103 and the stress sensing structure utilizes p-type electrical components, for example, by using a stress sensing structure similar to stress sensing structure 336.

[0100] Figure 4 and Figure 5 The circuit system shown, including voltage conversion circuitry 224, enables the generation of a stress voltage 225 in which the voltage of the signal varies based on the mechanical stress measured at a specific stress-sensing structure. By supporting the conversion of multiple combinations of sensing characteristics into inductively sensed signals 103, the area required to enable accurate detection of the mechanical stress distribution can be reduced.

[0101] Now for reference Figure 6 An example embodiment of a common-mode loop circuit system 228 is provided. As described herein, the common-mode loop circuit system 228 can be configured to generate bias signals 229a, 229b based on an enabled stress-sensing structure.

[0102] like Figure 6 As shown, the common-mode loop circuit system 228 includes an operational amplifier 602, which includes a negative terminal 602n, a positive terminal 602p, and an output terminal 602o. The negative terminal is configured to receive an average voltage 600 from the voltage gain circuit system 226 based on a stress voltage 225 generated by the voltage conversion circuit system 224. Figure 6 As shown, the voltage gain circuit system 226 may include a voltage divider comprising two resistors 614 and 616. An average voltage 600 may be received based on the center values ​​at the two resistors 614 and 616. In some embodiments, the two resistors 614 and 616 may have equal resistance values; therefore, the resulting average voltage 600 is the average of the stress voltages 225 received at the positive and negative terminals of the voltage gain circuit system 226.

[0103] like Figure 6As further shown, the positive terminal 602p of operational amplifier 602 is configured to receive a reference voltage. The output terminal 602o of operational amplifier 602 is electrically coupled to the gate terminal 604g of transistor 604. Transistor 604 also includes a drain terminal 604d electrically coupled to ground, a body terminal 604b electrically coupled to the drain terminal 604d, and a source terminal 604s. The source terminal 604s of transistor 604 is electrically coupled to switch 606, which, when closed, completes the electrical coupling between the power supply terminal 604s of transistor 604 and bias signal 229a. The gate terminal 604g is electrically coupled to bias signal 229b. Bias signal 229a can be used as a bias voltage for a stress sensing structure having a Wheatstone bridge sensing type. Bias signal 229b can be used as the gate voltage for a transistor including a stress sensing structure having a current mirror configuration. The closing of switches 608, 610, and 612 can be coordinated to ensure that bias signals 229a and 229b are set based on the measured stress-sensing structure. In some examples, sensing unit control logic can be used to coordinate the enabling / disabling of switches 608, 610, and 612.

[0104] Now for reference Figure 7 An example stress sensing device 100 is provided, which includes a temperature sensor 702 configured to compensate for one or more mechanical stress values ​​to generate a compensated mechanical stress value 708. Figure 7 As shown, the example stress sensing device 100 includes a sensing unit matrix 102 configured to transmit multiple inductive signals 103 to a front-end conversion circuit system 104, which includes a voltage conversion circuit system 224, a voltage gain circuit system 226, and a common-mode loop circuit system 228. The front-end conversion circuit system 104 generates a bias signal 113 configured to bias the measured stress sensing structure of the sensing unit matrix 102. The front-end conversion circuit system is also configured to generate an output stress voltage 107 for each stress sensing structure of the sensing unit matrix 102. An ADC 108 is configured to generate a digital stress voltage 109 based on the output stress voltage 107.

[0105] like Figure 7As shown, the DSP 110 includes a temperature compensation circuit system 704. The temperature compensation circuit system 704 is any circuit system including hardware and / or software configured to receive temperature from a temperature sensor 702 and generate a temperature-compensated mechanical stress voltage 708 based on a digital stress voltage 109 and the temperature. The electrical properties of semiconductor materials can depend significantly on the temperature of the semiconductor material and the temperature of the surrounding environment. Therefore, the temperature sensor 702 can be configured to measure the temperature and transmit it to the DSP 110 to compensate for the digital stress voltage 109 received from the stress-sensing structure. For example, an increase in the temperature of a semiconductor material can increase its conductivity. This increase in conductivity is associated with a decrease in the resistance of the semiconductor material. The temperature compensation circuit system 704 of the DSP 110 can be configured to generate a temperature-compensated mechanical stress voltage 708, thereby adjusting the mechanical stress value of the semiconductor material and the resulting mechanical stress distribution.

[0106] Now for reference Figure 8 An example sensing system 880 is shown, including a stress sensing device 100 (e.g., a mechanical stress measuring device). Figure 8 As shown, the stress sensing device 100 is configured to generate a stress value 808. The stress value 808 may include a mechanical stress value corresponding to a mechanical stress measured at a location on the semiconductor material by the sensing unit group. The stress value 808 may also include a mechanical stress distribution (e.g., mechanical stress distribution 111) modeling the mechanical stress across the semiconductor material. Furthermore, the mechanical stress value 808 may be stored as a stored stress value 810 in a memory 804, thereby enabling the determination of historical stress values ​​808 based on the stored stress value 810 of the semiconductor material. The stress value 808 and the stored stress value 810 may be used by the digital compensation unit 800 to compensate for the measurement output 806 of the sensing element 802.

[0107] Sensing element 802 is any device configured to determine the physical characteristics of the surrounding environment based on the electrical properties of a material. For example, sensing element 802 can utilize the resistivity of a material to determine the pressure, temperature, or other physical characteristics of the environment to which the material is exposed or interacts. Non-limiting examples of sensing element 802 include pressure sensors, temperature sensors, light sensors, MEMS gyroscopes, etc. The measurement output 806 of sensing element 802 may be affected by mechanical stresses on the material caused by unrelated external forces.

[0108] A digital compensation unit (DCU) 800 includes one or more processors configured to apply compensation to the measurement output 806 of the sensing element 802 based on a stress value 808 received from a stress sensing device 100 and a stored stress value 810 from a memory 804 configured to store historical stress values ​​808. The DCU 800 generates a stress-compensated measurement output 812 representing the measurement output 806 of the sensing element 802 compensated based on the stress value 808 observed by the stress sensing device 100 configured according to one or more embodiments of the present disclosure. The stress-compensated measurement output 812 can significantly improve the measurement output 806 of the sensing element 802.

[0109] Now for reference Figure 9 A process 900 is provided for determining a mechanical stress distribution (e.g., mechanical stress distribution 111) on a semiconductor material (e.g., semiconductor material 218). At block 902, a processor (e.g., DSP 110) receives a stress voltage (e.g., digital stress voltage 109) from a plurality of stress sensing structures (e.g., stress sensing structures 222, 332, 334, 336) disposed on the surface of the semiconductor material and including a sensing unit group (e.g., sensing unit group 220), wherein the stress voltage represents a component of the mechanical stress on the semiconductor material at the sensing unit group, including that each stress sensing structure of the sensing unit group exhibits a unique combination of sensing characteristics, and wherein the plurality of sensing unit groups are disposed on the surface of the semiconductor material in the form of a sensing unit matrix (e.g., sensing unit matrix 102). As described herein, the sensing unit group includes a plurality of stress sensing structures configured to determine the components of the mechanical stress on the semiconductor material at the sensing unit group. Each stress sensing structure of the sensing unit group is configured with a unique combination of sensing characteristics such that each sensing unit structure within the sensing unit group measures a unique component of the mechanical stress on the semiconductor material at the sensing unit group. For example, a unique combination of sensing type, doping type, and orientation may result in the measurement of a unique component of the sensing cell structure.

[0110] At block 904, the processor determines multiple mechanical stress values ​​for each sensing unit group, which includes a sensing unit matrix, representing the mechanical stress on the semiconductor material at the sensing unit group. Various digital stress voltages measured by each unique stress sensing structure in the sensing unit group can be combined to determine a mechanical stress value representing the total mechanical stress on the semiconductor material at the sensing unit group. For example, the sensing unit group may include a first stress sensing structure configured to measure mechanical stress in the semiconductor material in a first direction (e.g., the x-direction). The sensing unit group may also include a second stress sensing structure configured to measure mechanical stress in a second direction orthogonal to the first direction (e.g., the y-direction). These two measurements can be combined to determine a mechanical stress value representing the total mechanical stress on the semiconductor material at the sensing unit group. In other examples, the sum of the components of the mechanical stress may be measured by one stress sensing structure in the sensing unit group, while the difference in mechanical stress is measured by a second stress sensing structure, and the shear stress is measured by a third stress sensing structure in the sensing unit group. In such examples, each mechanical stress can be combined to determine a mechanical stress value representing the total mechanical stress on the semiconductor material at the sensing unit group.

[0111] At block 906, the controller determines a mechanical stress distribution representing mechanical stress on the semiconductor material based on multiple mechanical stress values. Each mechanical stress value represents the mechanical stress on the semiconductor material at a location (the location of a sensing unit group). However, the sensing unit matrix comprises multiple sensing unit groups distributed across the surface of the semiconductor material. As described herein, the controller can determine a mechanical stress distribution representing mechanical stress across the semiconductor material. Mechanical stress values ​​can be averaged, combined, averaged over time, filtered, or otherwise used to determine the mechanical stress distribution. In some embodiments, mechanical stress values ​​can be stored in a data structure based on the location of the sensing unit groups to represent the mechanical stress distribution.

[0112] Now for reference Figure 10 Example mechanical stress distributions 1000a-1000c are provided. For example... Figure 10 As shown, a processor (e.g., DSP 110) can determine mechanical stress values ​​1008a-1008c at the location of each sensing unit group. The mechanical stress values ​​1008a-1008c can be determined based on the components of the mechanical stress returned by each stress-sensing structure including the sensing unit group. Figure 10 As further shown, the mechanical stress values ​​1008a-1008c can be stored according to the position of the sensing unit groups on the semiconductor material. For example, in an example where the sensing unit groups of the sensing unit matrix are arranged in rows and columns across the surface of the semiconductor material, the mechanical stress values ​​1008a-1008c determined at each sensing unit group can be stored according to the row and column positions. Figure 10As shown, each of the mechanical stress values ​​1008a-1008c corresponds to rows 1002a-1002c and columns 1004a-1004c within the sensing unit matrix. In some embodiments, the array of mechanical stress values ​​1008a-1004c can be combined or filtered based on physical proximity to generate a mechanical stress distribution 1000a-1000c representing the entire semiconductor material.

[0113] Now for reference Figure 11 , Figure 11 An example DSP 110 according to at least some exemplary embodiments of the present disclosure is shown. DSP 110 includes a processor 1102, an input / output circuitry 1104, a data storage medium 1106, and a communication circuitry 1108. In some embodiments, DSP 110 is configured to implement and perform the operations described herein using one or more of the respective sets of circuitry 1102, 1104, 1106, and / or 1108.

[0114] Although the components are described with respect to functional limitations, it should be understood that a particular implementation necessarily involves the use of specific computing hardware. It should also be understood that in some embodiments, certain components described herein include similar or general-purpose hardware. For example, both sets of circuit systems may utilize the same processor(s), network interfaces, storage media, etc., to perform their associated functions, thus eliminating the need for duplicate hardware between each set of circuit systems. Therefore, the term "circuit system" as used herein with respect to components of the apparatus described herein should be understood to include specific hardware configured to perform functions associated with the particular circuit system described herein.

[0115] Specifically, the term "circuit system" should be broadly understood to include hardware, and in some embodiments, also includes software for configuring the hardware. For example, in some embodiments, "circuit system" includes processing circuitry, storage media, network interfaces, input / output devices, etc. Alternatively or additionally, in some embodiments, other elements of the DSP 110 provide or supplement the functionality of other groups of specific circuitry. For example, in some embodiments, the processor 1102 provides processing functionality to any group of circuitry, the data storage medium 1106 provides storage functionality to any group of circuitry, the communication circuitry 1108 provides network interface functionality to any group of circuitry, etc.

[0116] In some embodiments, processor 1102 (and / or coprocessor, or auxiliary processor, or any other processing circuitry system otherwise associated with the processor) communicates with data storage medium 1106 via a bus to transfer information between components of DSP 110. In some embodiments, for example, data storage medium 1106 is non-transitory and may include, for example, one or more volatile and / or non-volatile memories. In other words, for example, in some embodiments, data storage medium 1106 includes or embodies an electronic storage device (e.g., a computer-readable storage medium). In some embodiments, data storage medium 1106 is configured to store information, data, content, applications, instructions, etc., so that DSP 110 can perform various functions according to exemplary embodiments of this disclosure.

[0117] Processor 1102 can be embodied in a variety of different ways. For example, in some example embodiments, processor 1102 includes one or more processing devices configured to execute independently. Additionally or alternatively, in some embodiments, processor 1102 includes one or more processors configured in series via a bus to enable independent execution of instructions, pipelines, and / or multithreading. The terms “processor” and “processing circuitry system” should be understood to include single-core processors, multi-core processors, multiple processors within DSP 110, and / or one or more remote or “cloud” processors external to DSP 110.

[0118] In example embodiments, processor 1102 is configured to execute instructions stored in data storage medium 1106 or otherwise accessible to the processor. Alternatively or additionally, in some embodiments, processor 1102 is configured to perform hard-coded functions. Thus, whether configured by hardware or software methods, or by a combination thereof, processor 1102 represents an entity (e.g., physically embodied in a circuit system) capable of performing operations according to embodiments of this disclosure when configured accordingly. Alternatively or additionally, as another example, in some example embodiments, when processor 1102 embodies an executor of software instructions, these instructions specifically configure processor 1102 to perform the algorithm embodied in the specific operations described herein when such instructions are executed.

[0119] In some embodiments, DSP 110 includes an input / output circuitry 1104 that provides output to a user and, in some embodiments, receives indications of user input. In some embodiments, the input / output circuitry 1104 communicates with processor 1102 to provide such functionality. The input / output circuitry 1104 may include one or more user interfaces (e.g., user interfaces) and, in some embodiments, a display that includes multiple interfaces rendered as a network user interface, application user interface, user device, backend system, etc. Processor 1102 and / or the input / output circuitry 1104 including the processor may be configured to control one or more functions of one or more user interface elements via computer program instructions (e.g., software and / or firmware) stored in processor-accessible memory (e.g., data storage medium 1106, etc.). In some embodiments, the input / output circuitry 1104 includes or utilizes user-oriented applications to provide input / output functionality to client devices and / or other displays associated with the user.

[0120] In some embodiments, DSP 110 includes a communication circuitry system 1108. The communication circuitry system 1108 includes any components configured to receive data from and / or transmit data to a network and / or any other device, circuitry, or module communicating with DSP 110, such as devices or circuitry embodied in hardware or a combination of hardware and software. In this regard, for example, in some embodiments, the communication circuitry system 1108 includes a network interface for enabling communication with a wired or wireless communication network. Additionally or alternatively, in some embodiments, the communication circuitry system 1108 includes one or more network interface cards, antennas, buses, switches, routers, modems, and any other devices supporting hardware, firmware, and / or software, or suitable for enabling communication via one or more communication networks. Additionally or alternatively, the communication circuitry system 1108 includes circuitry for interacting with antenna(s) and / or other hardware or software to induce reception of signals transmitted via antenna(s) or processed signals received via antenna(s). In some embodiments, the communication circuitry system 1108 enables the transmission of data to and / or reception of data from a client device communicating with DSP 110.

[0121] Additionally or alternatively, in some embodiments, one or more of the circuit systems 1102-1108 are composable. Additionally or alternatively, in some embodiments, one or more of the circuit systems perform some or all of the functions associated with another component. For example, in some embodiments, one or more of the circuit systems 1102-1108 are combined into a single module embodied in hardware, software, firmware, and / or a combination thereof. Similarly, in some embodiments, one or more of the circuit systems are combined such that the processor 1102 individually performs one or more of the operations described above with respect to each of these circuit systems.

[0122] While this embodiment illustrates some aspects of the invention, the appended claims cover other embodiments of the invention that differ from the described embodiments, based on various modifications and improvements. For example, those skilled in the art will recognize that such principles can be applied to any electronic device that relies on the measurement of the electrical properties of a semiconductor substrate, such as MEMS gyroscopes, inertial measurement units, accelerometers, pressure sensors, temperature sensors, etc.

[0123] In the appended claims, unless the specific terms “component for…” or “step for…” are used in a given claim, the claims are not intended to be interpreted in accordance with section 112, paragraph 6 of title 35 of the United States Code.

[0124] The use of broader terms such as “comprises,” “includes,” and “having” should be understood to support narrower terms such as “consisting of,” “substantially consisting of,” and “substantially including.” For any element of the embodiments, the use of terms such as “optionally,” “may,” “perhaps,” and “possibly” indicates that the element is not essential, or alternatively, that the element is essential, both of which are within the scope of the embodiments. Furthermore, references to examples are for illustrative purposes only and do not imply exclusivity.

Claims

1. An apparatus comprising: A sensing unit group is disposed on the surface of a semiconductor material, the sensing unit group comprising: Multiple stress sensing structures, each comprising a different combination of sensing characteristics and configured as follows: Detecting the components of mechanical stress on the semiconductor material; and Generate an electrical signal representing the component of the mechanical stress; and A voltage conversion circuit system is configured to receive an electrical signal representing the component of the mechanical stress from each stress sensing structure, and to generate a stress voltage representing the component of the mechanical stress; The stress voltages from each stress sensing structure in the sensing unit group are combined to determine a mechanical stress value representing the mechanical stress on the semiconductor material at the sensing unit group.

2. The apparatus of claim 1, wherein the sensing characteristic includes at least one of sensing type, doping type, and orientation.

3. The apparatus of claim 2, wherein the sensing type includes at least one of a Wheatstone bridge sensing type and a current mirror configuration sensing type.

4. The apparatus of claim 2, wherein the orientation refers to the position of the stress sensing structure relative to the semiconductor orientation of the semiconductor material.

5. The apparatus of claim 2, wherein the sensing unit group comprises at least: The first stress sensing structure has a Wheatstone bridge sensing type. The second stress sensing structure has a current mirror configuration sensing type including a first plurality of transistors, wherein each of the first plurality of transistors has an n-type doped type; as well as The third stress sensing structure has a current mirror configuration sensing type including a second plurality of transistors, wherein each of the second plurality of transistors has a p-type doped type.

6. The apparatus of claim 5, wherein a first portion of the first plurality of transistors is positioned at a 45-degree angle relative to the semiconductor orientation, and wherein a second portion of the first plurality of transistors is positioned at a negative 45-degree angle relative to the semiconductor orientation.

7. The apparatus of claim 6, wherein a first portion of the second plurality of transistors is positioned at a 0-degree angle relative to the semiconductor orientation, and wherein a second portion of the second plurality of transistors is positioned at a 90-degree angle relative to the semiconductor orientation.

8. The apparatus of claim 3, wherein the voltage conversion circuit system comprises: A first switch is configured to enable a first electrical path, the first electrical path being configured to generate a first stress voltage representing a first component of the mechanical stress measured by a first stress sensing structure. as well as A second switch is configured to enable a second electrical path, which is configured to generate a second stress voltage representing a second component of the mechanical stress measured by the second stress sensing structure. The sensing type of the first stress sensing structure is different from the sensing type of the second stress sensing structure.

9. The apparatus of claim 1, further comprising a sensing unit matrix, the sensing unit matrix comprising: Multiple sensing unit groups disposed across the surface of the semiconductor material. The mechanical stress distribution, representing the mechanical stress on the semiconductor material, is determined based on the mechanical stress value at each of the plurality of sensing unit groups.

10. The apparatus of claim 9, further comprising a processor, and one or more storage devices including one or more processors and one or more storage devices storing instructions, the instructions being operable, when executed by the one or more processors, to cause the processor to: Stress voltages are received from each stress sensing structure in the sensing unit group, wherein each stress voltage represents a component of the mechanical stress; and The mechanical stress value at the sensing unit group is determined based on the stress voltage.

11. The apparatus of claim 10, wherein the processor is further configured to: The mechanical stress distribution across the semiconductor material is determined based on the mechanical stress value at each sensing unit group.

12. The apparatus according to claim 1, further comprising: A common-mode loop circuit system is configured to bias the stress sensing structure based on the stress voltage.

13. The apparatus of claim 12, wherein the common-mode loop circuit system is configured to provide a bias voltage to at least a first stress sensing structure and a bias current to at least a second stress sensing structure based on the stress voltage.

14. The apparatus of claim 1, further comprising a microelectromechanical system (MEMS) gyroscope, wherein the output of the MEMS gyroscope is modulated based on the mechanical stress on the semiconductor material.

15. The apparatus of claim 1, further comprising a temperature sensor, wherein the mechanical stress is adjusted based on a temperature received from the temperature sensor.

16. A method for determining the distribution of mechanical stress on a semiconductor material, the method comprising: The processor receives stress voltages from multiple stress-sensing structures disposed on the surface of a semiconductor material and comprising a group of sensing units. The stress voltage represents a component of the mechanical stress on the semiconductor material at the sensing unit group. This includes the fact that each stress-sensing structure in the sensing unit group exhibits a unique combination of sensing characteristics, and Multiple sensing unit groups are arranged on the surface of the semiconductor material in the form of a sensing unit matrix; Multiple mechanical stress values ​​are determined for each sensing unit group including the sensing unit matrix, the multiple mechanical stress values ​​representing the mechanical stress on the semiconductor material at the sensing unit group; The mechanical stress distribution representing the mechanical stress on the semiconductor material is determined based on the plurality of mechanical stress values.

17. The method of claim 16, wherein the stress voltage is received from a voltage conversion circuit system configured to receive an electrical signal representing the component of the mechanical stress from each stress sensing structure, and to generate the stress voltage representing the component of the mechanical stress based on the electrical signal.

18. The method of claim 16, wherein the sensing characteristic includes at least one of sensing type, doping type, and orientation.

19. The method of claim 18, wherein the sensing type includes at least one of a Wheatstone bridge sensing type and a current mirror configuration sensing type.

20. An apparatus comprising: A sensing element includes: a material configured to determine physical properties of an environment based on one or more electrical properties of the material; and Mechanical stress measuring device, including: A sensing unit group is disposed on the surface of a semiconductor material, the sensing unit group comprising: Multiple stress sensing structures, each comprising a different combination of sensing characteristics and configured as follows: Detecting the components of mechanical stress on the semiconductor material; and Generate an electrical signal representing the component of the mechanical stress; and A voltage conversion circuit system is configured to receive an electrical signal representing the component of the mechanical stress from each stress sensing structure, and to generate a stress voltage representing the component of the mechanical stress; The stress voltages from each stress sensing structure in the sensing unit group are combined to determine a mechanical stress value representing the mechanical stress on the semiconductor material at the sensing unit group; The physical properties are adjusted based on the mechanical stress value, which represents the mechanical stress on the semiconductor material at the sensing unit group.

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