BGV glass hole measuring structure and measuring method thereof
By forming a BGV glass hole measurement structure with trenches and island protrusions on the surface of the glass substrate and using probes to test electrical connections, the problem of seed layer sputtering quality judgment is solved, enabling accurate detection of sputtering quality and determination of the cause of abnormalities, thus reducing defect costs.
Patent Information
- Application Number
- CN202511166182.4
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-08-20
- Publication Date
- 2025-11-25
AI Technical Summary
Existing technologies cannot directly determine the sputtering quality of the seed layer in BGV holes, making it impossible to determine whether the problem lies in the electroplating process or the sputtering seed layer process when electroplating filling is abnormal. Furthermore, rework is not possible after an anomaly occurs, increasing the cost of defects.
The BGV glass aperture measurement structure is used to determine the sputtering quality by forming trenches and island protrusions on the surface of the glass substrate and using probes to test the electrical connection of the metal seed layer. The trenches and island protrusions are formed by laser induction, and the testing method includes current flow detection to detect open or closed circuits.
It enables accurate testing of the sputtering quality of metal seed layers, allowing for the identification of abnormalities and targeted rework, thus reducing the cost of defects.
Smart Images
Figure CN121007940A_ABST
Abstract
Description
Technical Field
[0001] This invention belongs to the field of BGV glass hole measurement technology, and particularly relates to a BGV glass hole measurement structure and its measurement method. Background Technology
[0002] With the rapid development of high-density electronic packaging, 3D integrated circuits (3D ICs), and microelectromechanical systems (MEMS), glass substrates, due to their excellent insulation, high-frequency characteristics, and thermal stability, are gradually becoming the core carrier for advanced packaging and optical devices. Fabricating high-precision blind glass vias (BGVs) in glass substrates is a key process for achieving vertical interconnection, signal transmission, and heat dissipation, and is particularly suitable for applications such as 5G RF modules, optical communication devices, and micro-sensors.
[0003] Interconnect technology based on the BGV solution uses electroplating to fill BGV vias with metallic copper as the interconnect layer. Before electroplating, a seed layer needs to be sputtered. The quality of the seed layer sputtered in the BGV via may be abnormal, such as breakage at the bottom corner or incomplete sidewall coverage, which will lead to the failure of subsequent electroplating. The sputtering quality of the seed layer cannot be directly judged. Therefore, the current method is to judge in reverse by the effect after electroplating. However, there is a problem of not being able to clearly attribute the abnormality, that is, it is impossible to determine whether it is the electroplating process or the sputtering seed layer process that has an impact. In addition, abnormalities after BGV electroplating and filling are usually not reworkable, and the cost of defects is very high. Summary of the Invention
[0004] This invention overcomes the shortcomings of the prior art by providing a BGV glass aperture measurement structure and method to solve the problems existing in the prior art.
[0005] To achieve the above objectives, the technical solution adopted by the present invention is as follows: a BGV glass aperture measurement method, employing a BGV glass aperture measurement structure, wherein a glass aperture is formed on the surface of a glass substrate by laser induction, and a metal seed layer is sputtered into the glass aperture, characterized in that...
[0006] The surface of the glass substrate is provided with a groove, and an island protrusion is provided in the groove. The top surface of the island protrusion is on the same plane as the top surface of the glass substrate, and any position on the top surface of the island protrusion is electrically connected to any position on the top surface of the glass substrate.
[0007] The BGV glass aperture measurement method includes the following steps:
[0008] S1. Laser-induced etching is performed on the test area on the surface of the glass substrate to form trenches, and an island protrusion is formed at the center of the trench.
[0009] S2. Install one probe on the top surface of the island protrusion and the other probe on the top surface of the glass substrate. Connect the two probes electrically. If a current path is formed, it indicates that the metal seed layer sputtering is qualified. If an open circuit is formed, it indicates that the metal seed layer sputtering is unqualified.
[0010] In a preferred embodiment of the present invention, the number of the trenches is at least one, and the island boss is formed at the center of the trench.
[0011] In a preferred embodiment of the present invention, the inner surface of the groove is a continuous curved surface, and the side surface of the island boss is a continuous curved surface.
[0012] In a preferred embodiment of the present invention, the glass hole is a circular hole.
[0013] In a preferred embodiment of the present invention, the planar pattern of the trench is a closed ring formed by embedding a plurality of glass holes into the surface of the glass substrate, wherein the closed ring is a pattern of arbitrary closed form formed by a plurality of circles.
[0014] This invention addresses the shortcomings of the prior art and has the following beneficial effects:
[0015] This invention enables the testing of the quality of the metal seed layer in a target region on a glass substrate. The testing results are good, and the sputtering status of the metal seed layer in the target region can be determined. Furthermore, the target region can be adjusted according to actual needs to summarize the regularity of the glass substrate, thereby providing test results for solving technical problems related to glass substrates. Attached Figure Description
[0016] The present invention will be further described below with reference to the accompanying drawings and embodiments;
[0017] Figure 1 This is a sputtering pattern of a metal seed layer in the background art;
[0018] Figure 2 This is a schematic diagram of the overall structure of a preferred embodiment of the present invention;
[0019] Figure 3 for Figure 2 Top view;
[0020] In the figure: 100, glass substrate; 101, glass hole; 10, trench; 20, island protrusion; 200, metal seed layer. Detailed Implementation
[0021] The present invention will be further described below with reference to the accompanying drawings and specific embodiments, so that those skilled in the art can better understand and implement the present invention. However, the embodiments described are not intended to limit the present invention.
[0022] This embodiment provides a BGV glass aperture measurement method. The method uses a BGV glass aperture measurement structure to test the quality of the metal seed layer 200 in the target area on the glass substrate 100. The test results are good, and it can determine the sputtering situation of the metal seed layer 200 in the target area. Moreover, the target area can be adjusted according to actual needs, so as to summarize the regularity of the glass substrate 100, thereby providing test results for solving technical problems of the glass substrate 100.
[0023] Combination Figures 1 to 3 As shown, in this embodiment, a glass hole 101 is formed on the surface of the glass substrate 100 by laser induction, and a metal seed layer 200 is sputtered in the glass hole 101. The measurement structure and measurement method of this embodiment realize the testing of the metal seed layer 200.
[0024] In this embodiment, a trench 10 is provided on the surface of the glass substrate 100, and an island protrusion 20 is provided in the trench 10. The top surface of the island protrusion 20 is on the same plane as the top surface of the glass substrate 100, and the top surface of the island protrusion 20 and the top surface of the glass substrate 100 are connected through a metal seed layer 200 in the trench 10.
[0025] In this embodiment, a trench 10 is formed on the surface of the glass substrate 100 by laser induction. After the trench 10 is formed, an island protrusion 20 is formed at the center of the trench 10. The location of the island protrusion 20 is the test area of the metal seed layer 200. Two probes are placed on the surface of the island protrusion 20 and the surface of the glass substrate 100. If a circuit is formed, it indicates that the metal seed layer 200 in the test area has no discontinuity or other issues. If a circuit is broken, it indicates that the metal seed layer 200 in the test area has discontinuity or other issues. In actual testing, two probes are inserted into the top surface of the island protrusion 20 and the top surface of the glass substrate 100, respectively, and a resistance test is performed by passing a 10mA current. If the metal seed layer 200 is broken, the circuit will be broken due to excessive resistance. This method is used to determine the sputtering effect of the metal seed layer 200 in the glass hole 101. At the same time, based on the test results, the abnormal glass substrate 100 can be reworked or sputtered to form a continuous metal seed layer 200, thereby significantly reducing the cost of defects.
[0026] Specifically, in this embodiment, there is at least one trench 10, and an island protrusion 20 is formed at the center of the trench 10. The position of the island protrusion 20 in this embodiment is the test area of the glass substrate 100. Therefore, in actual operation, the position of the island protrusion 20 can be changed according to the test requirements, and multiple island protrusions 20 can be formed through the trench 10 to test each area.
[0027] In this embodiment, the inner surface of the groove 10 is a continuous curved surface, the side surface of the island boss 20 is a continuous curved surface, and the glass hole 101 is a circular hole. The curvature of the inner surface of the groove 10, the curvature of the side surface of the island boss 20, and the curvature of the inner surface of the glass hole 101 are all the same. In this embodiment, the groove 10 is formed by laser-induced etching according to the shape of the glass hole 101, and the corresponding island boss 20 is formed. The groove 10 and the glass hole 101 are processed simultaneously without adding any additional processes. Only the test structure pattern is added to the glass surface.
[0028] Specifically, in this embodiment, the planar pattern of the trench 10 is a closed ring formed by embedding several glass holes 101 into the surface of the glass substrate 100. The closed ring is a pattern of arbitrary closed form formed by several circles. After etching, a structure with the same depth-to-width ratio as the BGV circular hole is obtained, thereby ensuring the accuracy of the test structure measurement results.
[0029] Obviously, the above embodiments are merely illustrative examples for clear explanation and are not intended to limit the implementation. Those skilled in the art will recognize that other variations or modifications can be made based on the above description. It is neither necessary nor possible to exhaustively list all possible implementations here. However, obvious variations or modifications derived therefrom are still within the scope of protection of this invention.
Claims
1. A BGV glass aperture measurement method, employing a BGV glass aperture measurement structure, wherein a glass aperture (101) is formed on the surface of a glass substrate (100) by laser induction, and a metal seed layer (200) is sputtered into the glass aperture (101), characterized in that, The surface of the glass substrate (100) is provided with a groove (10), and an island boss (20) is provided in the groove (10). The top surface of the island boss (20) is on the same plane as the top surface of the glass substrate (100), and any position on the top surface of the island boss (20) is electrically connected to any position on the top surface of the glass substrate (100). The BGV glass aperture measurement method includes the following steps: S1. Laser-induced etching is performed on the test area on the surface of the glass substrate (100) to form a trench (10), and an island protrusion (20) is formed at the center of the trench (10). S2. Install one probe on the top surface of the island protrusion (20) and the other probe on the top surface of the glass substrate (100). Connect the two probes electrically. If the current forms a circuit, it indicates that the sputtering of the metal seed layer (200) is qualified. If the current forms an open circuit, it indicates that the sputtering of the metal seed layer (200) is unqualified.
2. The method for measuring the BGV glass aperture according to claim 1, characterized in that, The number of the grooves (10) is at least one, and the island protrusion (20) is formed at the center of the groove (10).
3. The method for measuring the BGV glass aperture according to claim 1, characterized in that, The inner surface of the groove (10) is a continuous curved surface, and the side surface of the island boss (20) is a continuous curved surface.
4. The BGV glass aperture measurement method according to claim 3, characterized in that, The glass hole (101) is a circular hole.
5. The BGV glass aperture measurement method according to claim 4, characterized in that, The planar pattern of the trench (10) is a closed ring formed by a plurality of glass holes (101) embedded in the surface of the glass substrate (100), and the closed ring is a pattern of arbitrary closed form formed by a plurality of circles.