Nickel-plated laminate, semiconductor device, apparatus for manufacturing nickel-plated laminate, method for manufacturing nickel-plated laminate, and method for manufacturing semiconductor device

Abstract

A method for producing a nickel-plated laminate (2) according to the present invention comprises: a step (S1) in which a nickel (Ni) plating solution (200) containing phosphorus (P) and a sulfur additive and a material (1) to be plated are prepared; and a step (S2) for forming a nickel-plated laminate (2) on the material (1) to be plated using the nickel-plating solution (200). The nickel-plated laminate (2) includes nickel layers (20) having different phosphorus concentrations from each other.

Description

TECHNICAL FIELD

[0001] The present disclosure relates to a nickel-plated laminate, a semiconductor device, a manufacturing apparatus of a nickel-plated laminate, a manufacturing method of a nickel-plated laminate, and a manufacturing method of a semiconductor device. BACKGROUND

[0002] Conventionally, a manufacturing method of a nickel-plated laminate is known, in which a nickel-plated laminate is formed on a plating target material by immersion in a nickel plating solution. The nickel-plated laminate is formed of a nickel layer containing phosphorus. The plating target material immersed in the nickel plating solution is taken out and immersed in another nickel plating solution having a different concentration of phosphorus, so that a nickel layer having a different concentration of phosphorus can be further formed. However, when the plating target material is taken out from the nickel plating solution, an oxide film can be formed between the nickel layers. In Japanese Patent No. 2017-128791, instead of taking out the plating target material from the nickel plating solution, two nickel layers having different concentrations of phosphorus from each other are formed by changing the conditions (concentration or temperature, etc.) of the nickel plating solution. SUMMARY

[0003] However, in the above-described conventional method, it is difficult to change the concentration of phosphorus contained in a plurality of nickel layers multiple times. Therefore, in the conventional method, there is room for improvement in terms of changing the concentration of phosphorus contained in a plurality of nickel layers.

[0004] The present disclosure was completed in order to solve the above-described problems, and an object of the present disclosure is to provide a nickel-plated laminate in which the concentration of phosphorus contained in a plurality of nickel layers can be easily changed, a semiconductor device, a manufacturing apparatus of a nickel-plated laminate, a manufacturing method of a nickel-plated laminate, and a manufacturing method of a semiconductor device.

[0005] The manufacturing method of a nickel-plated laminate according to the present disclosure includes a step of preparing a nickel plating solution containing phosphorus and a sulfur additive and a plating target material, and a step of forming a nickel-plated laminate on the plating target material using the nickel plating solution. The nickel-plated laminate includes nickel layers having different concentrations of phosphorus from each other.

[0006] The manufacturing method of a semiconductor device according to the present disclosure uses the above-described manufacturing method of a nickel-plated laminate. The plating target material includes a semiconductor substrate.

[0007] The manufacturing apparatus of a nickel-plated laminate according to the present disclosure includes a container, and at least either a convection mechanism or a shaking mechanism. The container houses a nickel plating solution. The convection mechanism causes the nickel plating solution to flow. The shaking mechanism shakes a plating target material.

[0008] The nickel-plated laminate according to the present disclosure has at least three or more nickel layers. Two nickel layers having different concentrations of phosphorus from each other are arranged so as to directly contact each other.

[0009] The semiconductor device according to the present disclosure includes the above-described nickel-plated laminate and a connecting member. The nickel-plated laminate is provided with a recess. The nickel-plated laminate and the connecting member are connected via the recess. The above and other objects, features and advantages of the present application will become more apparent from the following detailed description thereof taken in conjunction with the accompanying drawings, in which: BRIEF DESCRIPTION OF DRAWINGS

[0010] Figure 1 is a schematic cross-sectional view of a plated nickel laminate according to Embodiment 1. Figure 2 is a schematic view of a manufacturing apparatus of a plated nickel laminate according to Embodiment 1. Figure 3 is a schematic view of a modification of the manufacturing apparatus of a plated nickel laminate according to Embodiment 1. Figure 4 is a flowchart of a manufacturing method of a plated nickel laminate according to Embodiment 1. Figure 5 is a schematic cross-sectional view of a semiconductor device according to Embodiment 2. Figure 6 is a schematic cross-sectional view of a plated nickel laminate according to Embodiment 3. Figure 7 is a schematic view for explaining a shielding effect. Figure 8 is a schematic partial enlarged cross-sectional view of a plated nickel laminate according to Embodiment 4. Figure 9 is a flowchart of a manufacturing method of a plated nickel laminate according to Embodiment 4. DETAILED DESCRIPTION

[0011] Hereinafter, an embodiment of the present disclosure will be described. In addition, in the following drawings, the same reference numerals are assigned to the same or corresponding portions unless particularly mentioned, and a description thereof will not be repeated.

[0012] Embodiment 1. Structure of plated nickel laminate Figure 1 is a schematic cross-sectional view of a plated nickel (Ni) laminate 2 according to Embodiment 1. Figure 1 The plated nickel laminate 2 illustrated is, for example, a plated nickel laminate 2 formed on a plated material 1, and has at least three or more nickel layers 20.

[0013] The plated material 1 can be an arbitrary member. The plated material 1 can be a semiconductor substrate that forms a semiconductor device. The plated material 1 can include a semiconductor base material 11 and a wiring layer 12 as described later (refer to Figure 5 ). The plated nickel laminate 2 can be disposed on the wiring layer 12 (refer to Figure 5 ).

[0014] As Figure 1As shown, the nickel-plated laminate 2 is formed of a plurality of nickel layers 20. The nickel-plated laminate 2 can be formed of three or more nickel layers 20, can be formed of five or more nickel layers 20, or can be formed of ten or more nickel layers 20.

[0015] As described later, the nickel layer 20 is formed using a nickel plating (Ni) solution containing phosphorus (P). That is, the nickel layer 20 contains phosphorus. In two nickel layers 20 arranged adjacent to each other, the concentration of phosphorus differs from each other. An oxide film is not formed between the plurality of nickel layers 20. That is, in two nickel layers arranged adjacent to each other, the nickel layers are arranged so as to directly contact each other.

[0016] Specifically, the plurality of nickel layers 20 includes a first layer 21, a second layer 22, and a third layer 23. The first layer 21 is adjacent to the second layer 22. The third layer 23 is adjacent to the second layer 22. When viewed from the second layer 22, the third layer 23 is arranged in an area opposite to an area in which the first layer 21 is arranged. That is, the first layer 21, the second layer 22, and the third layer 23 are laminated in this order.

[0017] An oxide film is not formed between the first layer 21 and the second layer 22. That is, the first layer 21 directly contacts the second layer 22. An oxide film is not formed between the second layer 22 and the third layer 23. That is, the second layer 22 directly contacts the third layer 23.

[0018] The concentration of phosphorus of the first layer 21 differs from the concentration of phosphorus of the second layer 22. Further, the concentration of phosphorus of the second layer 22 differs from the concentration of phosphorus of the third layer 23. The concentration of phosphorus of the first layer 21 can be greater than the concentration of phosphorus of the second layer 22, or can be less than the concentration of phosphorus of the second layer 22. The concentration of phosphorus of the second layer 22 can be greater than the concentration of phosphorus of the third layer 23, or can be less than the concentration of phosphorus of the third layer 23. Thus, the concentration of phosphorus in the nickel layers 20 adjacent to each other differs from each other.

[0019] According to the characteristics of the nickel layer 20 based on the concentration of phosphorus, the combination of the nickel layers 20 laminated can be changed. Table 1 shows the physical characteristics of each of a low-phosphorus layer, a middle-phosphorus layer, and a high-phosphorus layer. In Table 1, from top to bottom, the concentration of phosphorus, the crystal state, the magnetic property, the salt water spray resistance time (unit: Hr), the acid resistance, the hardness before heat treatment (Vickers hardness), the hardness after heat treatment (Vickers hardness), the thermal expansion rate, the electrical resistivity, the internal stress, the wear resistance, and the solder wettability are sequentially described. The hardness after heat treatment indicates the hardness after one hour of heat treatment at 400°C. The wear resistance is indicated by an index shown by a test wear index (TWI). The TWI indicates the resistance of a material to mechanical actions such as friction and cutting.

[0020] The nickel layer 20 is a low-phosphorus layer described in Table 1 in a case where the concentration of phosphorus contained in the nickel layer 20 is 1 mass% or more and 4 mass% or less. The nickel layer 20 is a medium-phosphorus layer described in Table 1 in a case where the concentration of phosphorus contained in the nickel layer 20 is 5 mass% or more and 8 mass% or less. The nickel layer 20 is a high-phosphorus layer described in Table 1 in a case where the concentration of phosphorus contained in the nickel layer 20 is 9 mass% or more and 12 mass% or less.

[0021] In addition, in Table 1, A, B, C indicate the evaluation in each item in the acid resistance and solder wettability. B indicates more excellent than C. A indicates more excellent than B. That is, A indicates the most excellent evaluation among A, B, and C. Further, the salt water spray resistance time indicates the time until the stage where a certain value is exceeded in the salt water spray test. The degree of corrosion is evaluated from both the appearance observation and the mass raw material determination.

[0022]

Table 1

[0023] The nickel-plated layer stack 2 can be a nickel-plated layer stack 2 in which a low-phosphorus layer and a medium-phosphorus layer are sequentially stacked. The low-phosphorus layer is relatively poor in corrosion resistance, whereas the medium-phosphorus layer has excellent corrosion resistance. Therefore, by sequentially stacking the low-phosphorus layer and the medium-phosphorus layer, the corrosion resistance of the low-phosphorus layer is supplemented by the medium-phosphorus layer. Further, the low-phosphorus layer and the medium-phosphorus layer have magnetism when heated.

[0024] The nickel-plated layer stack 2 can be a nickel-plated layer stack 2 in which a medium-phosphorus layer and a high-phosphorus layer are sequentially stacked. The solder wettability of the medium-phosphorus layer is relatively poor, whereas the high-phosphorus layer has excellent solder wettability. Therefore, by sequentially stacking the medium-phosphorus layer and the high-phosphorus layer, the solder wettability of the medium-phosphorus layer is supplemented by the high-phosphorus layer. Further, the medium-phosphorus layer has magnetism when heated. However, the high-phosphorus layer does not have magnetism.

[0025] The thickness of each of the nickel layers 20 can be, for example, 0.1 μm or more and 0.4 μm or less. The average value of the thickness of each of the nickel layers 20 in the nickel-plated layer stack 2 can be 0.1 μm or more and 0.5 μm or less. The lower limit of the average value of the thickness can be 0.15 μm or 0.2 μm. The upper limit of the average value of the thickness can be 0.4 μm or 0.3 μm. The average value can be, for example, 0.23 μm. The thickness of the nickel-plated layer stack 2 (the total thickness of the nickel layers 20) can be 3 μm or more and 10 μm or less. The lower limit of the thickness can be 1 μm, 2 μm, 3 μm, or 4 μm. The upper limit of the thickness can be 8 μm, 6 μm, or 5 μm. The thickness can be, for example, 4.3 μm. Thus, the thickness of each of the nickel layers 20 is a submicron order thickness, and therefore, the internal stress of the nickel-plated layer stack 2 is relaxed.

[0026] Thus, by forming the nickel layers 20 having different concentrations of phosphorus from each other, a plated nickel laminate 2 that can obtain effects corresponding to the use can be obtained. Particularly, by forming three or more nickel layers 20 having different concentrations of phosphorus from each other, effects of improvement of wear resistance, improvement of corrosion resistance, improvement of solder wettability, increase of hardness (Vickers hardness), and stress relaxation can be obtained.

[0027] <Manufacturing device of plated nickel laminate> Next, a manufacturing device 100 of the plated nickel laminate 2 according to the present embodiment 1 will be described. Figure 2 is a schematic view of the manufacturing device 100 of the plated nickel laminate 2 according to the present embodiment 1. The plated nickel laminate 2 is formed using the manufacturing device 100 as shown in Figure 2 . The manufacturing device 100 of the plated nickel laminate 2 includes a container 101, a convection mechanism 102, and a shaking mechanism 103. The manufacturing device 100 can have at least either one of the convection mechanism 102 and the shaking mechanism 103, as shown in Figure 2 , or both of the convection mechanism 102 and the shaking mechanism 103.

[0028] The container 101 houses a plated nickel (Ni) solution 200 and a plating target material 1. The plated nickel solution 200 is, for example, a non-electrolytic plated nickel solution, and contains phosphorus (P) and a sulfur additive. The sulfur additive is, for example, thiocyanate or the like.

[0029] The plated nickel laminate 2 formed of the nickel layers 20 is manufactured by immersing the plating target material 1 in the plated nickel solution 200. The speed of forming the nickel layers 20 varies depending on the amount of the sulfur additive contained in the plated nickel solution 200. Further, when the relative flow rate of the plated nickel solution 200 with respect to the plating target material 1 on which the nickel layers 20 are formed varies, the frequency of contact of the surface of the plating target material 1 with nickel ions in the plated nickel solution 200 varies. As a result, the speed of film formation of nickel on the surface of the plating target material 1 becomes faster. Thus, the speed of forming the nickel layers 20 varies, and the concentration of phosphorus of the nickel layers 20 varies. For example, when the amount of the sulfur additive contained in the plated nickel solution 200 decreases, the concentration of phosphorus of the nickel layers 20 formed increases. Further, when the relative flow rate of the plated nickel solution 200 with respect to the surface of the plating target material 1 on which the nickel layers 20 are formed becomes faster, the concentration of phosphorus of the nickel layers 20 formed decreases.

[0030] Figure 2 In the manufacturing device 100 as shown in , the amount of nickel (Ni) and phosphorus (P) that contact the plating target material 1 per unit time is varied, and thus a plurality of nickel layers 20 having different concentrations of phosphorus from each other are formed. That is, a plated nickel laminate 2 in which the concentration of phosphorus is graded is manufactured.

[0031] In order to manufacture the plated nickel laminate 2 according to the present embodiment 1, at least either one of the convection mechanism 102 and the shaking mechanism 103 is used.

[0032] The convection mechanism 102 causes the nickel plating solution 200 to convect. As shown in FIG. 2, the nickel plating solution 200 can be circulated using the convection mechanism 102. As a result, the nickel plating solution 200 can be caused to convect within the container 101. Figure 2

[0033] Specifically, as shown in FIG. 2, the convection mechanism 102 has a pipe 102a and a pump 102b. Both ends of the pipe 102a are connected to the container 101. The nickel plating solution 200 flows from the container 101 into the pipe 102a via one end of the pipe 102a as shown by the arrow and passes through the pipe 102a. The pump 102b is provided midway through the pipe 102a. That is, the pump 102b is provided between one end and the other end of the pipe 102a. The pump 102b sends out the nickel plating solution 200. The nickel plating solution 200 that has passed through the pipe 102a flows again into the container 101 via the other end of the pipe 102a. Figure 2

[0034] As a result, the nickel plating solution 200 within the container 101 is circulated via the pipe 102a. That is, by circulating the nickel plating solution 200 using the convection mechanism 102, the flow rate (the amount of the nickel plating solution 200 that contacts the material to be plated 1 per unit time) of the nickel plating solution 200 that contacts the material to be plated 1 can be adjusted.

[0035] The flow rate of the nickel plating solution 200 that contacts the material to be plated 1 is determined by the circulation flow rate of the nickel plating solution 200 that goes in and out of the container 101. The circulation flow rate can be 30 L / min or more and 60 L / min or less, or 40 L / min or more and 50 L / min or less.

[0036] If the circulation flow rate is increased, the number of times per unit time that the material to be plated 1 contacts the nickel ions contained in the nickel plating solution 200 increases. That is, the flow rate of the nickel plating solution 200 that contacts the surface of the material to be plated 1 rises, and thus the nickel layer 20 having a low concentration of phosphorus is formed.

[0037] When the nickel layer 20 having a low concentration of phosphorus is formed, the amount of the sulfur additive contained in the nickel plating solution 200 decreases. Therefore, the nickel plating solution 200 is adjusted to form the nickel layer 20 having a high concentration of phosphorus. As a result, the nickel layer 20 having a high concentration of phosphorus is formed adjacent to the nickel layer 20 having a low concentration of phosphorus.

[0038] As a result, by adjusting the flow rate of the nickel plating solution 200 that contacts the material to be plated 1, the nickel layer 20 having a desired concentration of phosphorus can be formed.

[0039] ​​The material to be plated 1 is housed in the container 101 as described above. The material to be plated 1 is immersed in the nickel plating solution 200 so as to be in contact therewith. The material to be plated 1 can be held by the shaking mechanism 103. The shaking mechanism 103, for example, shakes in the up-and-down direction. As a result, the material to be plated 1 is shaken in the up-and-down direction. The shaking mechanism 103, for example, can shake in the left-and-right direction. Thus, by shaking the material to be plated 1, it is possible to adjust the flow rate of the nickel plating solution 200 in contact with the material to be plated 1.

[0040] When the nickel layer 20 is formed, hydrogen gas is generated on the surface of the material to be plated 1. If this hydrogen gas remains on the surface of the material to be plated 1 and the formation of the nickel layer 20 continues to proceed, a defect called a pit or a pinhole is generated. In order to prevent the generation of this defect, the shaking mechanism 103 can have an impact mechanism 104. The impact mechanism 104, for example, can be an air cylinder or a shaking cam. As shown in Figure 2

[0041] The impact mechanism 104 applies an impact to the material to be plated 1. Thus, it is possible to remove the hydrogen gas generated on the surface of the material to be plated 1 from the surface of the material to be plated 1. In addition, by the impact mechanism 104, the effect of the convection of the nickel plating solution 200 increases.

[0042] The shaking period of the shaking mechanism 103, for example, can be 1 second or more and 5 seconds or less. The period in which the impact mechanism 104 applies an impact to the material to be plated 1 can be the same as the shaking period of the shaking mechanism 103.

[0043] Thus, the flow rate of the nickel plating solution 200 in contact with the material to be plated 1 is adjusted using the shaking mechanism 103, and it is possible to form the nickel layer 20 having a desired concentration of phosphorus.

[0044] In order to adjust the flow rate of the nickel plating solution 200 in contact with the material to be plated 1, the convection mechanism 102 can be used, the shaking mechanism 103 can be used, or both the convection mechanism 102 and the shaking mechanism 103 can be used.

[0045] <Manufacturing device of nickel-plated layer stack> Figure 3 is a schematic view of a modification example of the manufacturing device 100 of the nickel-plated layer stack 2 according to Embodiment 1. Figure 3 Corresponding to Figure 2 . Figure 3 The manufacturing device 100 shown in Figure 2 has basically the same structure as the manufacturing device 100 shown in

[0046] Specifically, as shown in Figure 3 ​As shown, the convection mechanism 102 has a fan 102c. The fan 102c rotates, thereby stirring the nickel plating solution 200 in the container 101. The convection mechanism 102 can also have a stirrer instead of the fan 102c.

[0047] Thus, the nickel plating solution 200 in the container 101 can be stirred using the convection mechanism 102 having the fan 102c. By stirring the nickel plating solution 200, the flow rate of the nickel plating solution 200 that contacts the material to be plated 1 can be adjusted.

[0048] The flow rate of the nickel plating solution 200 that contacts the material to be plated 1 is determined by the rotation speed of the convection mechanism 102 that stirs the nickel plating solution 200. The rotation speed of the convection mechanism 102 can be 400 rpm or more and 1000 rpm or less, or 600 rpm or more and 800 rpm or less.

[0049] If the rotation speed of the convection mechanism 102 is increased, the number of times of contact of the material to be plated 1 with nickel ions contained in the nickel plating solution 200 increases. That is, the flow rate of the nickel plating solution 200 that contacts the surface of the material to be plated 1 rises, thereby forming a nickel layer 20 having a low concentration of phosphorus.

[0050] Thus, by adjusting the flow rate of the nickel plating solution 200 that contacts the material to be plated 1 using the convection mechanism 102 that stirs the nickel plating solution 200, a nickel layer 20 having a desired concentration of phosphorus can be formed.

[0051] <Method for manufacturing nickel-plated laminate> Next, a method for manufacturing the nickel-plated laminate 2 according to the present embodiment 1 will be described. Figure 4 is a flowchart of the method for manufacturing the nickel-plated laminate 2 according to the present embodiment 1. In the method for manufacturing the nickel-plated laminate 2 according to the present embodiment 1, first, a process (S1) of preparing a nickel plating solution 200 containing a phosphorus and sulfur additive and a material to be plated 1 is performed.

[0052] As shown in Figure 2 or Figure 3 , the nickel plating solution 200 is housed in a container 101. The nickel plating solution 200 is, for example, a non-electrolytic nickel plating solution, and contains phosphorus (P) and a sulfur additive.

[0053] Next, a process (S2) of forming a nickel-plated laminate 2 using the nickel plating solution 200 on the material to be plated 1 is performed. In this process (S2), a manufacturing apparatus 100 shown in Figure 2 or Figure 3 is used to form the nickel-plated laminate 2. Specifically, the material to be plated 1 is housed in the container 101. The material to be plated 1 is immersed in the nickel plating solution 200 for a certain period of time. Thus, the material to be plated 1 is subjected to a plating treatment.

[0054] When the plating treatment is performed, a manufacturing apparatus 100 shown inFigure 2 and Figure 3 at least one or both of the convection mechanism 102 and the shaking mechanism 103 shown in FIG. 1, to adjust the flow rate of the nickel plating solution 200 in contact with the material to be plated 1.

[0055] Thus, the nickel plating laminate 2 including the nickel layers 20 having different concentrations of phosphorus from each other as shown in FIG. 2 is manufactured. Figure 1

[0056] Once the state of the nickel plating solution 200 is changed, it is difficult to return to the original state. That is, it takes time to return the state of the nickel plating solution 200 to the original state. Therefore, in the case where the method of changing the state of the nickel plating solution 200 is used, the productivity of the nickel plating laminate 2 is low.

[0057] On the other hand, according to the method of manufacturing the nickel plating laminate 2 according to Embodiment 1, it is possible to form the plurality of nickel layers 20 having different concentrations of phosphorus from each other without changing the state of the nickel plating solution 200 (for example, the concentration of phosphorus contained in the nickel plating solution 200 and the temperature of the nickel plating solution 200). That is, since the state of the nickel plating solution 200 is not changed, it is possible to efficiently form the plurality of nickel layers 20 having different concentrations of phosphorus. As a result, the productivity of the nickel plating laminate 2 according to Embodiment 1 is improved.

[0058] In the case where a plurality of nickel plating solutions 200 is used, if the material to be plated 1 is taken out of the nickel plating solution 200, the surface of the formed nickel layer 20 contacts air, and an oxide film can be formed.

[0059] On the other hand, according to the method of manufacturing the nickel plating laminate 2 described above, it is not necessary to use a plurality of nickel plating solutions 200 having different concentrations of phosphorus to form the nickel layers 20 having different concentrations of phosphorus. That is, one nickel plating solution 200 is used to form the plurality of nickel layers 20 having different concentrations of phosphorus from each other, and therefore, it is not necessary to take out the material to be plated 1 from the nickel plating solution 200 in the middle of the process of forming the nickel layers 20. Therefore, an oxide film is not formed between the nickel layers 20.

[0060] <Effects> ​The manufacturing method of the nickel-plated laminate 2 according to the present disclosure includes: a step (S1) of preparing a nickel-plating (Ni) solution 200 containing phosphorus (P) and a sulfur additive, and a material to be plated 1; and a step (S2) of forming the nickel-plated laminate 2 using the nickel-plating solution 200 on the material to be plated 1. The nickel-plated laminate 2 contains nickel layers 20 having different concentrations of phosphorus from each other. In the manufacturing method of the nickel-plated laminate 2 described above, the nickel-plated laminate 2 can contain three or more nickel layers 20. In the three or more nickel layers 20, the concentration of phosphorus is different between nickel layers 20 adjacent to each other. In the step (S2) of forming the nickel-plated laminate 2, the same nickel-plating solution 200 can be used to form the plurality (three or more) of nickel layers 20. In the step (S2) of forming the nickel-plated laminate 2, the concentration of phosphorus in the nickel layers 20 can be changed by changing the contact state of the nickel-plating solution 200 with respect to the material to be plated 1 (for example, the relative flow rate of the nickel-plating solution 200 in contact with the surface of the material to be plated 1, or the flow direction of the nickel-plating solution 200 with respect to the surface of the material to be plated 1, and the like).

[0061] Thus, it is possible to form a plurality of nickel layers 20 having different concentrations of phosphorus from each other without changing the state of the nickel-plating solution 200 (the concentration of phosphorus contained in the nickel-plating solution 200 and the temperature of the nickel-plating solution 200). That is, since the state of the nickel-plating solution 200 is not changed, it is possible to continuously form a plurality of nickel layers 20 having different concentrations of phosphorus. As a result, the productivity of the nickel-plated laminate 2 according to the present embodiment 1 is improved. In addition, since one nickel-plating solution 200 is used to form a plurality of nickel layers 20 having different concentrations of phosphorus from each other, an oxide film is not formed between the nickel layers 20. Thus, by forming nickel layers 20 having different concentrations of phosphorus from each other, it is possible to obtain a nickel-plated laminate 2 corresponding to the use.

[0062] According to the manufacturing method of the nickel-plated laminate 2 described above, in the step (S2) of forming the nickel-plated laminate 2, the nickel-plating solution 200 is subjected to convection.

[0063] Thus, the flow rate of the nickel-plating solution 200 in contact with the material to be plated 1 is adjusted. That is, the concentration of phosphorus contained in the nickel layers 20 can be changed by changing the flow rate of the nickel-plating solution 200 without changing the state of the nickel-plating solution 200. Therefore, it is possible to easily form a plurality of nickel layers 20 having different concentrations of phosphorus.

[0064] According to the manufacturing method of the nickel-plated laminate 2 described above, in the step (S2) of forming the nickel-plated laminate 2, the material to be plated 1 is shaken.

[0065] Thus, the flow rate of the nickel-plating solution 200 in contact with the material to be plated 1 is adjusted. That is, the concentration of phosphorus contained in the nickel layers 20 can be changed by changing the flow rate of the nickel-plating solution 200 without changing the state of the nickel-plating solution 200. Therefore, it is possible to easily form a plurality of nickel layers 20 having different concentrations of phosphorus.

[0066] The apparatus 100 for manufacturing the nickel-plated laminate 2 disclosed herein includes a container 101, and at least one of a convection mechanism 102 and a shaking mechanism 103. The container 101 contains a nickel plating solution 200. The convection mechanism 102 causes the nickel plating solution 200 to convect. The shaking mechanism 103 shakes the material 1 to be plated.

[0067] Therefore, multiple nickel layers 20 with different phosphorus concentrations can be formed without changing the state of the nickel plating bath 200 (the concentration of phosphorus contained in the nickel plating bath 200 and the temperature of the nickel plating bath 200). That is, since the state of the nickel plating bath 200 is not changed, multiple nickel layers 20 with different phosphorus concentrations can be formed continuously. As a result, the mass production capability of the nickel plating laminate 2 according to Embodiment 1 is improved. In addition, by using a single nickel plating bath 200 to form multiple nickel layers 20 with different phosphorus concentrations, no oxide film is formed between the nickel layers 20. Thus, by forming nickel layers 20 with different phosphorus concentrations, a nickel plating laminate 2 corresponding to the intended application can be obtained.

[0068] The nickel-plated laminate 2 disclosed herein comprises at least three nickel layers 20. Two nickel layers 20 with different phosphorus concentrations are configured to be in direct contact with each other.

[0069] Thus, by forming nickel layers 20 with different phosphorus concentrations, it is possible to obtain a nickel-plated laminate 2 that corresponds to the intended use.

[0070] Implementation method 2. <Structure of Semiconductor Devices> Figure 5 This is a simplified cross-sectional view of the semiconductor device 10 according to Embodiment 2. Figure 5 Corresponding to Figure 1 . Figure 5 The semiconductor device 10 shown is equipped with Figure 1 The semiconductor device 10 shown is a nickel-plated laminate 2 according to Embodiment 1. Specifically, the semiconductor device 10 includes a material to be plated 1, a nickel-plated laminate 2 according to Embodiment 1, and a back metal 3. The material to be plated 1 includes a semiconductor substrate 11 and a wiring layer 12.

[0071] The semiconductor substrate 11 may be made of silicon, for example. A wiring layer 12 is formed on the semiconductor substrate 11. The wiring layer 12 may be made of aluminum (Al) or silicon (Si), for example. A nickel-plated laminate 2 is disposed on the wiring layer 12. When viewed from the semiconductor substrate 11, a back metal 3 is formed in the region opposite to the region where the wiring layer 12 is disposed. The back metal 3 may be made of a metal such as aluminum. In addition, a semiconductor element (not shown) is formed on the semiconductor 11.

[0072] Thus, the nickel-plated laminate 2 can be used as a member constituting the semiconductor device 10.

[0073] The manufacturing method of the semiconductor device 10 according to Embodiment 2 uses the manufacturing method of the nickel-plated laminate 2 according to Embodiment 1. In the manufacturing method of the semiconductor device 10, first, the same process as the process (S1) is performed, in which the nickel-plating solution 200 and the material to be plated 1 shown in FIG. 1 are prepared. Figure 4 In the process (S1), the material to be plated 1 includes the semiconductor substrate 11 and the wiring layer 12.

[0074] Next, the same process as the process (S2) is performed, in which the nickel-plated laminate 2 shown in FIG. 2 is formed. Figure 4 In the process (S2), the nickel-plated laminate 2 is formed on the wiring layer 12. After the nickel-plated laminate 2 is formed, the back metal 3 can be formed by any method. The back metal 3 is formed in a region opposite to a region in which the nickel-plated laminate 2 is disposed, as viewed from the material to be plated 1. Thus, the semiconductor device 10 shown in FIG. 3 can be obtained. Figure 5

[0075] <Effects> The manufacturing method of the semiconductor device 10 according to the present disclosure uses the manufacturing method of the nickel-plated laminate 2. The material to be plated 1 includes the semiconductor substrate 11.

[0076] Thus, the nickel-plated laminate 2 is used as a member constituting the semiconductor device 10.

[0077] Embodiment 3. <Structure of nickel-plated layer> Figure 6 is a schematic cross-sectional view of the nickel-plated laminate 2 according to Embodiment 3. Figure 6 Corresponding to Figure 1 . Figure 6 The nickel-plated laminate 2 shown in FIG. 2 basically has the same structure as the nickel-plated laminate 2 shown in FIG. 2, and the same effects can be obtained, but differs in that the material to be plated 1 includes the base layer 15. Figure 1

[0078] Specifically, the material to be plated 1 includes the substrate 14 and the base layer 15. The material constituting the substrate 14 is, for example, copper (Cu). The substrate 14 has a high electrical conductivity. The base layer 15 is formed on the substrate 14. The material constituting the base layer 15 is copper. The base layer 15 can be formed using a non-electrolytic plating method.

[0079] The nickel-plated laminate 2 is disposed on the base layer 15. The nickel-plated laminate 2 can be the nickel-plated laminate 2 in which the middle-phosphorus layer and the high-phosphorus layer are sequentially laminated. The thickness of the nickel-plated laminate 2 is, for example, 0.3 μm or more and 10.0 μm or less.​​

[0080] As shown in Table 1, the medium-phosphorus layer and the high-phosphorus layer have different crystal states. The medium-phosphorus layer is a magnetic crystalline layer. The high-phosphorus layer is a non-magnetic, amorphous layer. When electromagnetic waves are incident on the nickel plating stack 2, they flow through the nickel layers 20, which are multiple medium-phosphorus layers. As a result, a high shielding effect is obtained in the nickel plating stack 2.

[0081] Figure 7 This is a schematic diagram illustrating the shielding effect. A portion of the electromagnetic wave (incident wave 41) incident on the shielding material 4 is reflected as a reflected wave 42 by the shielding material 4. A portion of the electromagnetic wave (incident wave 41) incident on the shielding material 4 passes through the interior of the shielding material 4 as an attenuated wave 43. A portion of the electromagnetic wave (incident wave 41) incident on the shielding material 4 undergoes multiple reflections as a multiple reflected wave 44 within the shielding material 4. A portion of the electromagnetic wave (incident wave 41) incident on the shielding material 4 passes through the shielding material 4 as a transmitted wave 45.

[0082] When the incident wave 41 passes through the shielding material 4 as a transmitted wave 45, the shielding effect of the shielding material 4 is represented by the reduction in the energy of the electromagnetic wave. This reduction is the sum of reflection loss (loss as reflected wave 42), absorption loss (loss as attenuated wave 43) due to absorption by the shielding material 4, and multiple reflection correction (loss as multiple reflected wave 44 due to multiple reflections within the shielding material 4). The units for reduction, reflection loss, absorption loss, and multiple reflection correction are each decibels (dB). Products that achieve excellent shielding effects are called electromagnetic wave shields.

[0083] Therefore, the nickel-plated laminate 2 can be used as a shielding material 4. Copper used as the substrate 14 is easily oxidized in the atmosphere. Therefore, the shielding effect of the substrate 14 may decrease.

[0084] Therefore, by forming an electroless nickel plating layer or a permalloy plating layer on copper with high electrical conductivity, it is possible to prevent the oxidation of copper.

[0085] The phosphorus concentrations in the multiple nickel layers 20 are different, therefore, the electrical conductivity of the nickel layers differs from one another. Thus, by forming a nickel-plated laminate 2 through which a medium-phosphorus layer and a high-phosphorus layer are sequentially stacked on a substrate 14, it is thus... Figure 7 The shielding material 4 shown increases the absorption loss as a result of the attenuation of wave 43. Consequently, the reduction in shielding effectiveness increases, and the shielding effect is improved. Furthermore, the wear resistance of this nickel-plated laminate 2 is improved.

[0086] In the manufacturing method of the nickel-plated laminate 2 according to Embodiment 3, firstly, the same process as step (S1) is performed, in which a preparation is made Figure 4A nickel plating solution 200 and a material to be plated 1 are shown. In this process (S1), the material to be plated 1 includes a base material 14 and a base layer 15. The base layer 15 can be formed using a non-electrolytic plating method.

[0087] Next, the same process as in the process (S2) is performed, in which a nickel plating layer 20 is formed on the base layer 15. Figure 4 A nickel plating layer 20 is shown. In the process (S2), the nickel plating layer 20 is formed on the base layer 15. Thus, a product in which the shielding effect is improved can be obtained. Figure 6 A semiconductor device 10 is shown.

[0088] <Effects> According to the manufacturing method of the nickel plating layer 20 described above, the material to be plated 1 includes the base layer 15.

[0089] Thus, by forming the nickel plating layer 20 in which the middle phosphorus layer and the high phosphorus layer are sequentially stacked on the base layer 15, a product in which the shielding effect is improved can be obtained.

[0090] Embodiment 4 <Structure of nickel plating layer> Figure 8 A nickel plating layer 20 according to Embodiment 4 is shown as a schematic partial enlarged cross-sectional view. Figure 8 A nickel plating layer 20 shown basically has the same structure as the nickel plating layer 20 shown in Figure 1 The nickel plating layer 20 shown basically has the same structure as the nickel plating layer 20 shown in

[0091] Specifically, as shown in Figure 8 The connecting member 5 is a member that can be connected to the outer peripheral surface 2s of the nickel plating layer 20. The connecting member 5 is disposed on the material to be plated 1. Figure 8 A portion of a semiconductor device, for example, including the material to be plated 1, the nickel plating layer 20, and the connecting member 5 is shown.

[0092] The material constituting the connecting member 5 is a material that is easy to mold. The material constituting the connecting member 5 can be, for example, a resin material such as polyimide, a metal material such as solder, or glass.

[0093] The outer peripheral surface 2s is provided with a plurality of recesses 2a. A portion of the connecting member is filled into the plurality of recesses 2a. Thus, by filling the connecting member 5 into the recesses 2a, the contact area of the nickel plating layer 20 and the connecting member 5 increases. As a result, the adhesiveness of the nickel plating layer 20 and the connecting member 5 improves. In addition, the affinity of the nickel plating layer 20 and the connecting member 5 improves.

[0094] <Manufacturing method of nickel plating layer> Next, the manufacturing method of the nickel-plated laminate 2 according to Embodiment 4 will be described. Figure 9 is a flowchart of the manufacturing method of the nickel-plated laminate 2 according to Embodiment 4. In the manufacturing method of the nickel-plated laminate 2 according to Embodiment 4, the same processes as those shown in FIG. 8 are sequentially performed, and the processes of forming the nickel-plated laminate 2 (S2) are performed. Figure 4 The same processes as those shown in FIG. 8 are sequentially performed, and the processes of forming the nickel-plated laminate 2 (S2) are performed.

[0095] Next, the process (S3) is performed, in which a plurality of recesses 2a are formed in the nickel-plated laminate 2 using an electrolyte solution containing metal ions having a higher potential than nickel (Ni). In this process S(3), the plurality of recesses 2a are formed in the nickel-plated laminate 2 using the electrolyte solution. The electrolyte solution contains metal ions having a higher potential than nickel (Ni). As the metal having a higher potential than nickel, for example, tin (Sn), lead (Pb), copper (Cu), silver (Ag), gold (Au), or the like can be given.

[0096] The electrolyte solution is brought into contact with the nickel-plated laminate 2, and thus a potential difference is generated at the outer circumferential surface 2s of the nickel-plated laminate 2. That is, in the nickel-plated laminate 2, the nickel layer 20 having a relatively low concentration of phosphorus is locally corroded. In the nickel layer 20 exposed at the outer circumferential surface 2s (the side surface at the outer circumferential end) of the nickel-plated laminate 2, the nickel layer 20 having a low concentration of phosphorus is corroded, and thus the plurality of recesses 2a are formed at the outer circumferential surface 2s. Subsequently, the connecting member 5 is formed. The manufacturing method of the connecting member 5 can use any method known in the art. Thus, the device shown in FIG. 10 can be obtained. Figure 8

[0097] Thus, by forming the plurality of recesses 2a at the outer circumferential surface 2s of the nickel-plated laminate 2 in contact with the connecting member 5, the adhesion of the nickel-plated laminate 2 and the connecting member 5 is improved. In addition, the affinity of the nickel-plated laminate 2 and the connecting member 5 is improved.

[0098] <Effects> The manufacturing method of the nickel-plated laminate 2 includes the process (S3), in which, after the process (S2) of forming the nickel-plated laminate 2, a plurality of recesses 2a are formed in the nickel-plated laminate 2 using an electrolyte solution containing metal ions having a higher potential than nickel (Ni).

[0099] Thus, the plurality of recesses 2a are formed at the outer circumferential surface 2s of the nickel-plated laminate 2. As a result, by filling the connecting member 5 into the recesses 2a, the contact area of the nickel-plated laminate 2 and the connecting member 5 is increased. That is, the adhesion of the nickel-plated laminate 2 and the connecting member 5 is improved. In addition, the affinity of the nickel-plated laminate 2 and the connecting member 5 is improved.

[0100] ​While embodiments of the present disclosure have been described, it is to be understood that the disclosed embodiments are merely exemplary of the disclosure, and are not intended to limit the scope of the present disclosure. It is therefore believed that the scope of the present disclosure is best described by reference to the appended claims in conjunction with the description.

Claims

1. A method for manufacturing a nickel-plated laminate, characterized in that, include: The process of preparing a nickel plating solution containing phosphorus and sulfur additives, as well as the material to be plated; as well as The process of forming a nickel-plated laminate on the material to be plated using the nickel plating solution. The nickel-plated laminate comprises nickel layers with varying phosphorus concentrations.

2. The method for manufacturing a nickel-plated laminate as described in claim 1, characterized in that, In the process of forming the nickel plating laminate, the nickel plating solution is convected.

3. The method for manufacturing a nickel-plated laminate as described in claim 1 or 2, characterized in that, During the process of forming the nickel-plated laminate, the material to be plated is shaken.

4. The method for manufacturing a nickel-plated laminate as described in any one of claims 1 to 3, characterized in that, The material to be plated includes a base layer.

5. The method for manufacturing a nickel-plated laminate as described in any one of claims 1 to 4, characterized in that, It also includes a step of forming a plurality of recesses in the nickel-plated laminate using an electrolyte containing metal ions with a higher potential than nickel, after the step of forming the nickel-plated laminate.

6. A method for manufacturing a semiconductor device, A method for manufacturing a semiconductor device using the method for manufacturing a nickel-plated laminate according to any one of claims 1 to 5, characterized in that, The material to be plated includes a semiconductor substrate.

7. An apparatus for manufacturing a nickel-plated laminate, characterized in that, include: A container for storing nickel plating solution; as well as At least one of a convection mechanism for convection of the nickel plating solution and a shaking mechanism for shaking the material to be plated.

8. A nickel-plated laminate, It is a nickel-plated laminate with at least three nickel layers, characterized in that... Two nickel layers with different phosphorus concentrations are configured to be in direct contact with each other.

9. A semiconductor device, characterized in that, include: The nickel-plated laminate as described in claim 8; as well as Connecting components, The nickel-plated laminate has a recess. The nickel-plated laminate and the connecting member are connected by the recess.

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