Wide-spectrum integrated spectrometer

Abstract

The invention relates to a broadband spectrum integrated spectrometer which comprises a reading circuit and a quantum dot array photosensitive layer located on one side of the reading circuit, and the quantum dot array photosensitive layer comprises quantum dot photosensitive material units aiming at different response wavebands. The response wave band comprises an X-ray wave band, an ultraviolet light wave band, a visible light wave band and an infrared light wave band. Therefore, the quantum dots can directly convert received optical signals into electric signals through the photoelectric effect, the quantum dot photosensitive material units of different corresponding wavebands can convert optical signals of different wavelengths into electric signals, and the electric signals are output through the reading circuit, so that complex optical beam splitting systems and steps in a traditional spectrometer are avoided, the structure is simplified, and the cost is reduced. And the limitation problem caused by mechanical adjustment of the light splitting element is improved, the portability, the response speed and the precision of the spectrometer are improved, and the application field and application of the spectrometer are expanded.

Description

TECHNICAL FIELD

[0001] The present disclosure relates to the technical field of photoelectric detection, and in particular to a wide-spectrum integrated spectrometer. BACKGROUND

[0002] A spectrometer is an instrument for analyzing and resolving the intensity of different light waves (i.e., the wavelength of light signals), and is widely used in many fields such as astronomy, biology, chemistry, medicine, and environmental science.

[0003] At present, a spectrometer mainly separates and detects light signals by wavelength through a traditional light splitting component such as a prism or a grating. The optical system design of a traditional spectrometer is usually large and complex, and relies on mechanical components (such as light splitting elements such as prisms and gratings), resulting in a large device size and high cost. The volume is usually large, which is not convenient to move, which greatly limits the application field and application range of the spectral imager; at the same time, the prisms and gratings used in the traditional spectrometer often need to be mechanically adjusted, which limits the portability and response speed of the traditional spectrometer. SUMMARY

[0004] In order to solve the above technical problems, the present disclosure provides a wide-spectrum integrated spectrometer.

[0005] The present disclosure provides a wide-spectrum integrated spectrometer, comprising:

[0006] a readout circuit;

[0007] a quantum dot array photosensitive layer located on one side of the readout circuit, the quantum dot array photosensitive layer comprising quantum dot photosensitive material units for different response wavebands, the response wavebands including an X-ray waveband, an ultraviolet light waveband, a visible light waveband, and an infrared light waveband.

[0008] Optionally, the quantum dot photosensitive material units for different response wavebands are arranged in a linear array or a surface array in a plane parallel to the readout circuit.

[0009] Optionally, the thicknesses of the quantum dot photosensitive material units for different response wavebands are within the same thickness range.

[0010] Optionally, the thickness of the quantum dot photosensitive material unit is 500 nanometers to 800 nanometers.

[0011] Optionally, the quantum dot photosensitive material unit for the X-ray waveband includes at least one of a lead sulfide quantum dot and a cadmium sulfide quantum dot;

[0012] the quantum dot photosensitive material unit for the ultraviolet light waveband includes at least one of a zinc oxide quantum dot and a perovskite quantum dot;

[0013] The quantum dot photosensitive material unit responding to the visible light band includes at least one of cadmium telluride quantum dots and perovskite quantum dots.

[0014] The quantum dot photosensitive material unit responding to the infrared light band includes at least one of mercury sulfide, mercury selenide, indium antimonide, lead selenide, lead sulfide, lead selenide, mercury telluride, mercury selenide, cadmium sulfide, cadmium telluride, cadmium selenide, silver sulfide, silver telluride and silver selenide.

[0015] Optionally, the infrared light band includes at least two of short-wave infrared, medium-wave infrared and long-wave infrared.

[0016] Optionally, the readout circuit includes a plurality of electrodes.

[0017] The quantum dot photosensitive material unit is connected to the electrodes corresponding thereto, and the electrodes transmit the photoelectric signals generated by the quantum dot photosensitive material unit.

[0018] Optionally, the wide-spectrum integrated spectrometer further includes a signal processing module connected to the electrodes.

[0019] The signal processing module receives the photoelectric signals transmitted by the electrodes and processes to obtain a spectral image or spectral data.

[0020] Optionally, the wide-spectrum integrated spectrometer further includes an encapsulation layer located at least on a side of the quantum dot array photosensitive layer away from the readout circuit, and covering an exposed surface of the quantum dot array photosensitive layer.

[0021] Optionally, the thickness of the encapsulation layer is less than 50 nanometers.

[0022] The technical solution provided by the present disclosure has the following advantages compared with the prior art:

[0023] The wide-spectrum integrated spectrometer provided by the present disclosure includes a readout circuit and a quantum dot array photosensitive layer located on one side of the readout circuit. The quantum dot array photosensitive layer includes quantum dot photosensitive material units for different response bands, including X-ray band, ultraviolet light band, visible light band and infrared light band. Thus, the quantum dots can directly convert the received light signals into electrical signals through photoelectric effect. The quantum dot photosensitive material units for different response bands can convert light signals of different wavelengths into electrical signals and output through the readout circuit. Thus, the complex optical splitting system and steps in the traditional spectrometer are avoided, the structure is simplified, the limitation problem caused by mechanical adjustment of the splitting element is improved, the portability, response speed and accuracy of the spectrometer are improved, and the application field and application range of the spectrometer are expanded. BRIEF DESCRIPTION OF DRAWINGS

[0024] The accompanying drawings, which are incorporated herein and constitute a part of the specification, illustrate embodiments consistent with the present disclosure and serve to explain the principles of the present disclosure together with the specification.

[0025] In order to more clearly illustrate the technical solutions in the embodiments of the present disclosure or the prior art, the accompanying drawings required by the embodiments or the prior art description will be briefly introduced. Obviously, those skilled in the art can obtain other drawings according to these drawings without any creative effort.

[0026] Figure 1 A schematic diagram of a planar structure of a wide-spectrum integrated spectrometer according to an embodiment of the present disclosure is shown in FIG. 1.

[0027] Figure 2 A schematic diagram of a planar structure of another wide-spectrum integrated spectrometer according to an embodiment of the present disclosure is shown in FIG. 2.

[0028] Figure 3 A schematic diagram of a film layer structure of a wide-spectrum integrated spectrometer according to an embodiment of the present disclosure is shown in FIG. 3.

[0029] Figure 4 A schematic diagram of a film layer structure of another wide-spectrum integrated spectrometer according to an embodiment of the present disclosure is shown in FIG. 4.

[0030] Figure 5 A schematic diagram of a preparation process of a wide-spectrum integrated spectrometer according to an embodiment of the present disclosure is shown in FIG. 5. DETAILED DESCRIPTION

[0031] In order to more clearly illustrate the technical solutions in the embodiments of the present disclosure or the prior art, the accompanying drawings required by the embodiments or the prior art description will be briefly introduced. Obviously, those skilled in the art can obtain other drawings according to these drawings without any creative effort.

[0032] In the following description, many specific details are set forth in order to provide a thorough understanding of the present disclosure. However, the present disclosure can be practiced without the specific details. Obviously, the embodiments described in the specification are only some embodiments of the present disclosure, not all embodiments.

[0033] With the development of optoelectronic technology, especially the application of quantum dot materials in the field of optoelectronic detection, new spectral detection technology has emerged. Quantum dot materials have unique light absorption and emission characteristics, can cover a wide range of wavelengths, and have high photoelectric conversion efficiency.

[0034] The wide-spectrum integrated spectrometer provided by the embodiments of the present disclosure is a spectrometer based on a quantum dot array photosensitive layer. The colloidal quantum dots in the quantum dot array photosensitive layer are semiconductor nanocrystals with very small sizes (usually in the range of several nanometers). By setting the colloidal quantum dots as the photosensitive material in the photosensitive layer, detection of different wave bands can be realized by changing the types of the colloidal quantum dots.

[0035] Specifically, in the embodiments of the present disclosure, colloidal quantum dot materials are used as a coating covering the array readout circuit. Quantum dots can cover a wide range of wavelengths from X-rays to infrared. The energy level and absorption characteristics of each quantum dot unit can be adjusted as needed to ensure that the spectrometer can work efficiently in the full wave band range. For example, the energy level and absorption characteristics of the quantum dot unit can be flexibly adjusted according to the characteristics of the quantum dot material and the application requirements of the quantum dot material in spectral detection. The specific adjustment methods are as follows: for the adjustment requirements of different wavelength ranges, the specific adjustment methods include size adjustment and alloying adjustment; for the performance adjustment requirements, the specific adjustment methods include surface passivation.

[0036] The wide-spectrum integrated spectrometer provided by the embodiments of the present disclosure will be described below with reference to the accompanying drawings.

[0037] For example, Figure 1 FIG. 1 is a schematic diagram of a planar structure of a wide-spectrum integrated spectrometer provided by the embodiments of the present disclosure, showing a spectrometer in a linear array structure; Figure 2 FIG. 2 is a schematic diagram of a planar structure of another wide-spectrum integrated spectrometer provided by the embodiments of the present disclosure, showing a spectrometer in a two-dimensional array structure; Figure 3 FIG. 3 is a schematic diagram of a film layer structure of a wide-spectrum integrated spectrometer provided by the embodiments of the present disclosure, showing the film layer structure of the spectrometer. For reference Figure 1 and Figure 3 , or for reference Figure 2 and Figure 3 The wide-spectrum integrated spectrometer 10 provided by the embodiments of the present disclosure can include a readout circuit 11 and a quantum dot array photosensitive layer 12. The quantum dot array photosensitive layer 12 is located on one side of the readout circuit 11. The quantum dot array photosensitive layer 12 includes quantum dot photosensitive material units 120 for different response wave bands, including X-ray wave bands, ultraviolet wave bands, visible wave bands, and infrared wave bands.

[0038] The quantum dot photosensitive material units 120 in the quantum dot array photosensitive layer 12 can respond to optical signals in the X-ray wave band, the ultraviolet wave band, the visible wave band, and the infrared wave band, generate corresponding electrical signals such as current or voltage, and read out the corresponding electrical signals through the readout circuit 11.

[0039] In the wide-spectrum integrated spectrometer 10 provided by the embodiments of the present disclosure, a wide-band quantum dot array is arranged in the quantum dot array photosensitive layer 12, i.e., quantum dot material is used as a coating to cover the readout circuit 11, and the quantum dot photosensitive material units 120 in the quantum dot array photosensitive layer 12 can cover a wide wavelength range from X-ray to infrared. The energy level and absorption characteristics of each quantum dot photosensitive material unit 120 (the quantum dot photosensitive material unit can also be referred to as a "quantum dot unit") can be adjusted according to the application requirements in spectral detection, to ensure that the wide-spectrum integrated spectrometer 10 can work efficiently in the full-band range.

[0040] The wide-spectrum integrated spectrometer 10 provided by the embodiments of the present disclosure does not need the optical system such as a spectrometer prism in a traditional spectrometer. Specifically, the wide-spectrum integrated spectrometer 10 is different from the traditional spectrometer which needs to use a spectrometer prism or a grating to decompose light signals into light of different wavelengths. The miniature wide-spectrum integrated spectrometer 10 provided by the embodiments of the present disclosure directly responds to light signals of different wavelengths by using a quantum dot array (i.e., the quantum dot array photosensitive layer 12), thereby simplifying the overall structure of the instrument and the process of mechanically adjusting the light splitting element, and facilitating application.

[0041] The wide-spectrum integrated spectrometer 10 provided by the embodiments of the present disclosure can realize direct conversion of photoelectric signals, i.e., the quantum dot photosensitive material units 120 based on quantum dots in the quantum dot array photosensitive layer 12 directly convert received light signals into electrical signals through photoelectric effect. Different wavelengths of light signals are converted into different current or voltage signals under the action of quantum dot material and output through the readout circuit. This way avoids the complex optical light splitting step in the traditional spectrometer, simplifies the structure, and improves the response speed and accuracy of the instrument.

[0042] In some embodiments, with reference to Figure 1 The quantum dot photosensitive material units 120 of different response bands are arranged in a linear array in a plane parallel to the readout circuit 11, so as to form a spectrometer with a linear array structure.

[0043] In some embodiments, with reference to Figure 2 The quantum dot photosensitive material units 120 of different response bands are arranged in a two-dimensional array in a plane parallel to the readout circuit 11, so as to form a spectrometer with a two-dimensional array structure.

[0044] In some embodiments, with reference to Figure 3 The thicknesses of the quantum dot photosensitive material units 120 of different response bands are in the same thickness range. For example, the thicknesses of the quantum dot photosensitive material units 120 can be equal within an allowable error range, without being strictly equal in a mathematical sense.

[0045] In the embodiments of the present disclosure, by setting the thickness of the quantum dot photosensitive material unit 120 for different response wavebands in the quantum dot array photosensitive layer 12 within the same thickness range, it is convenient to form a regular quantum dot array photosensitive layer 12, and it is also convenient to form other film layer structures on the layer.

[0046] In some embodiments, the thickness of the quantum dot photosensitive material unit 120 is 500 nanometers to 800 nanometers, and the thickness of the quantum dot array photosensitive layer 12 is 500 nanometers to 800 nanometers.

[0047] For example, the thickness of the quantum dot photosensitive material unit 120 can be 500 nanometers, 800 nanometers, 650 nanometers, 500-550 nanometers, 600-700 nanometers, 750-800 nanometers, or other thickness values or thickness range values, which are not limited herein.

[0048] In some embodiments, the quantum dot photosensitive material unit 120 responding to the X-ray waveband includes at least one of lead sulfide quantum dots and cadmium sulfide quantum dots, that is, the quantum dot material of the X-ray quantum dot layer can include lead sulfide (PbS) quantum dots and / or cadmium sulfide (CdS) quantum dots.

[0049] In some embodiments, the quantum dot photosensitive material unit 120 responding to the ultraviolet light waveband includes at least one of zinc oxide quantum dots and perovskite quantum dots, that is, the quantum dot material of the ultraviolet light quantum dot layer can include zinc oxide (ZnO) quantum dots and / or perovskite quantum dots.

[0050] In some embodiments, the quantum dot photosensitive material unit 120 responding to the visible light waveband includes at least one of cadmium telluride quantum dots and perovskite quantum dots, that is, the quantum dot material of the visible light quantum dot layer can include CsPbX3, CH3PbX3, FAPbX3, MASnX3, and FASnX3, etc. perovskite quantum dot materials. Metal halide perovskite is a direct bandgap material, and its bandgap can be adjusted by changing its composition; and it is a solution-processed semiconductor with excellent optoelectronic properties, including a large absorption coefficient and good charge transport. For example, the absorption coefficient can reach 10 4 -10 5 cm -1 , the electron mobility can reach 75 cm 2 / (V·s), and the hole mobility can reach 12.5 cm 2 / (V·s).

[0051] In some embodiments, the quantum dot photosensitive material unit 120 responding to the infrared light waveband includes at least one of mercury sulfide, mercury selenide, indium antimonide, lead selenide, lead sulfide, lead selenide, mercury telluride, mercury selenide, cadmium sulfide, cadmium telluride, cadmium selenide, silver sulfide, silver telluride, and silver selenide.

[0052] Among them, the colloidal quantum dots in the quantum dot array photosensitive layer 12 are semiconductor nanocrystals with very small size (usually in the range of a few nanometers). By setting colloidal quantum dots as the photosensitive material in the photosensitive layer, the detection of different wavelengths can be achieved by changing the type of colloidal quantum dots.

[0053] Specifically: lead sulfide (PbS) quantum dots and cadmium sulfide (CdS) quantum dots can be used for detection in the X-ray band; for example, the size of lead sulfide quantum dots can be 3-5 nanometers, and the size of cadmium sulfide quantum dots can be 2-4 nanometers.

[0054] Specifically, zinc oxide (ZnO) quantum dots and perovskite quantum dots can be used for detection in the ultraviolet light band; for example, the size of zinc oxide quantum dots can be 2-5 nanometers, and the size of perovskite quantum dots can be 3-4 nanometers.

[0055] Specifically, perovskite quantum dots and cadmium telluride (CdTe) quantum dots are suitable for detection in the visible light band; for example, the size of perovskite quantum dots can be 2-6 nanometers, and the size of cadmium telluride quantum dots can be 2-10 nanometers.

[0056] Specifically, lead sulfide (PbS) quantum dots, lead selenide (PbSe) quantum dots, and mercury telluride (HgTe) quantum dots can be used for detection in the infrared band; for example, the size of lead selenide quantum dots can be 3-5 nanometers, and the size of mercury telluride quantum dots can be 2-10 nanometers.

[0057] In this embodiment, the blue and red shifts of X-ray bands can be controlled by material selection, alloying regulation, and size and morphology control; for the ultraviolet band, the response range of the ultraviolet band can be adjusted by adjusting the proportion of reactants; the emission wavelength of quantum dots in the visible light band is inversely proportional to their size, and the band gap width can be precisely adjusted by controlling the diameter of the quantum dots, achieving continuous control from blue light to red light; for the infrared band, the response band of infrared quantum dots can be adjusted by adjusting the reaction band and reaction temperature.

[0058] Specifically, by using colloidal quantum dots as the material of the photosensitive layer 12 of the quantum dot array, the quantum dot layer (i.e., quantum dot photosensitive material unit) on each pixel responds to a specific spectral range. The absorption band can be adjusted by controlling the type of quantum dots in the quantum dot layer or by controlling the alloying of the same quantum dots, the reaction time, or the reaction temperature.

[0059] For example, regarding blue shift and red shift in the X-ray band: the band gap can be increased by reducing the quantum dot size (e.g., from 10 nm to 5 nm), resulting in a blue shift in the band.

[0060] For example, in the ultraviolet band, the response range can be adjusted by regulating the ratio of reactants. For instance, with perovskite quantum dots CsPbBr3, the band gap can be tuned from 514 nm (green light) to 413 nm (ultraviolet light) by adjusting the mixing ratio of bromine (Br) and chlorine (Cl), achieving continuous coverage from visible light to ultraviolet light.

[0061] For example, regarding the manipulation of quantum dots in the visible light band, taking CdSe quantum dots as an example: when the diameter is 2nm, it emits blue light (470nm) and when it is 6nm, it emits red light (630nm), thus covering the entire visible spectrum.

[0062] For example, in the infrared band, the response band can be adjusted by regulating the reaction time and reaction temperature. Specifically, taking HgTe quantum dots as an example, at a high temperature of 200℃, rapid growth can generate HgTe (5nm), corresponding to a band gap of 0.5eV; by cooling to 150℃ and extending the reaction time, the crystal can be gradually grown to 15nm, and the band gap can be reduced to 0.07eV.

[0063] In this embodiment of the present disclosure, a coating comprising different quantum dots is formed on the surface of the readout array. Specifically, quantum dot materials for different response bands can be uniformly coated on the surface of the readout circuit. The light absorption characteristics of each quantum dot are adjustable according to its material composition and particle size, thereby covering different wavelength ranges.

[0064] In some embodiments, the infrared band includes at least two of short-wave infrared, mid-wave infrared, and long-wave infrared.

[0065] In this embodiment of the disclosure, the response band of the quantum dot photosensitive material unit included in the quantum dot layer for the infrared light band can be a dual-band combination of short / medium wave, short / long wave, and medium / long wave, or a three-band combination of short / medium / long wave, so as to achieve infrared light response in multiple bands.

[0066] For example, the infrared photosensitive layer material can be one or more of the following: mercuric sulfide (HgS2), mercuric selenide (HgSe), InSb (indium antimonide), lead selenide (PbSe), lead sulfide (PbS), lead selenide (PbSe), mercuric telluride (HgTe), mercuric selenide (HgSe), cadmium sulfide (CdS), cadmium telluride (CdTe), cadmium selenide (CdSe), silver sulfide (Ag2S), silver telluride (Ag2Te), and silver selenide (Ag2Se), and is not limited herein.

[0067] In some embodiments, the readout circuit 11 includes a plurality of electrodes; the quantum dot photosensitive material unit 120 is connected to the electrodes, and the electrodes transmit the photoelectric signals generated by the quantum dot photosensitive material unit 120.

[0068] This disclosure provides an array readout circuit. Specifically, the readout circuit 11 includes multiple electrodes, each electrode being connected to a corresponding quantum dot photosensitive material unit 120. That is, each electrode is connected to the quantum dot of the corresponding quantum dot photosensitive material unit 120. When the quantum dot absorbs a light signal and converts it into an electrical signal, the corresponding connected electrode will detect the corresponding current or voltage change and read out the current or voltage change signal through the readout circuit.

[0069] In some embodiments, the broadband integrated spectrometer 10 further includes a signal processing module connected to the electrodes; the signal processing module receives photoelectric signals transmitted by the electrodes and processes them to obtain spectral images or spectral data.

[0070] Specifically, when an optical signal is absorbed by a quantum dot, the quantum dot absorbs photons and generates photogenerated carriers. The corresponding quantum dot photosensitive material unit 120 converts the received optical signal into an electrical signal. The converted electrical signal undergoes amplification, filtering, and other signal processing by a signal processing module to improve the signal-to-noise ratio and accuracy. Finally, the processed electrical signal is converted into a spectral image or data, clearly showing the intensity distribution of light at different wavelengths, thereby enabling detailed analysis and measurement of the spectrum.

[0071] In some embodiments, Figure 4 A schematic diagram of the film structure of another broadband integrated spectrometer provided in this disclosure embodiment. Figure 3 Based on, refer to Figure 4 The broadband integrated spectrometer 10 also includes a packaging layer 13, which is located at least on the side of the quantum dot array photosensitive layer 12 away from the readout circuit 11 and covers the exposed surface of the quantum dot array photosensitive layer 12.

[0072] In this embodiment of the disclosure, an encapsulation layer 13 is provided to protect other structures in the spectrometer, such as the quantum dot array photosensitive layer 12. Specifically, by adding an encapsulation layer 13 to the outer layer of the quantum dot array photosensitive layer 12, the encapsulation layer 13 can effectively resist water and oxygen penetration, thereby improving the structural stability and performance stability of the instrument.

[0073] In some embodiments, the thickness of the encapsulation layer 13 is less than 50 nanometers.

[0074] Specifically, the encapsulation layer 13 can be deposited on the exposed surface of the quantum dot array photosensitive layer 12 using PECVD (plasma-enhanced chemical vapor deposition) or ALD (atomic layer deposition) processes. The thickness of the encapsulation layer 13 can be less than 50 nm, which can resist water and oxygen penetration and improve the stability of the instrument.

[0075] In some embodiments, Figure 5This is a schematic diagram illustrating the fabrication process of a broadband integrated spectrometer provided in this embodiment of the disclosure, mainly showing the steps involved in forming quantum dot photosensitive material units. (Reference) Figure 5 A quantum dot solution dissolved in photosensitive ligands is spin-coated onto the entire surface of a CMOS chip. A mask is placed on top of the CMOS chip, and the chip is exposed to ultraviolet light. The exposed area is then hardened, and the remaining quantum dots are washed away using an organic solvent. Figure 5 The middle image shows ultraviolet exposure; the exposed area of ​​the mask hardens, while the unexposed area covered by the mask does not harden. Figure 5 The last image only retains the quantum dots in the exposed area, achieving patterning. Understandably, to couple quantum dots with readout circuits at different response bands, it's necessary to form separate films of the corresponding quantum dot solutions and then pattern them.

[0076] In this embodiment, colloidal quantum dots can be fabricated onto silicon-based readout circuits via spin coating, spraying, or photolithography. The quantum dot film is patterned using these methods to achieve horizontal coupling from X-rays to the infrared band. An array of quantum dot photosensitive material units made of different materials such as cadmium sulfide (CdS), lead sulfide (PbS), and cadmium selenide (CdSe) is constructed. Each material corresponds to a specific spectral response range (e.g., CdS is sensitive to visible light, and PbS is sensitive to infrared), achieving broad spectral coverage through material combinations. The array layout does not require precise arrangement; only different material photosensitive layers need to be coated according to spectral response zones. Based on CMOS technology and combined with mature silicon photodetectors, the incident light signal is converted into an electrical signal using the silicon photodetector. During the initialization phase, each quantum dot photosensitive material unit is calibrated using a monochromatic light source (e.g., a xenon lamp + monochromator) to establish a "wavelength-resistance change rate" database. A nonlinear regression model (e.g., a support vector machine) is used to compensate for the nonlinear illumination characteristics of the quantum dot photosensitive material units, realizing the mapping relationship between spectral intensity and resistance change.

[0077] In this embodiment, colloidal quantum dots are synthesized via liquid-phase chemical reactions, offering advantages such as low cost and high yield. Furthermore, they can be directly coated onto various substrate materials using methods such as spin coating or drop coating, significantly reducing processing costs.

[0078] It should be noted that, in this document, relational terms such as "first" and "second" are used merely to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Without further limitations, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes said element.

[0079] The above description is merely a specific embodiment of this disclosure, enabling those skilled in the art to understand or implement it. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of this disclosure. Therefore, this disclosure is not to be limited to the embodiments described herein, but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A broadband integrated spectrometer, characterized in that, include: Readout circuit; A quantum dot array photosensitive layer is located on one side of the readout circuit. The quantum dot array photosensitive layer includes quantum dot photosensitive material units for different response bands, including X-ray band, ultraviolet band, visible light band and infrared band.

2. The broadband integrated spectrometer according to claim 1, characterized in that, Quantum dot photosensitive material units with different response bands are arranged in a linear array or a planar array in a plane parallel to the readout circuit.

3. The broadband integrated spectrometer according to claim 1, characterized in that, The thickness of quantum dot photosensitive material units with different response bands is within the same thickness range.

4. The broadband integrated spectrometer according to claim 1, characterized in that, The thickness of the quantum dot photosensitive material unit is 500 nanometers to 800 nanometers.

5. The broadband integrated spectrometer according to any one of claims 1-4, characterized in that, The quantum dot photosensitive material unit with a response band in the X-ray band includes at least one of lead sulfide quantum dots and cadmium sulfide quantum dots; The quantum dot photosensitive material unit responsive to ultraviolet light includes at least one of zinc oxide quantum dots and perovskite quantum dots; Quantum dot photosensitive material units responsive to the visible light band include at least one of cadmium telluride quantum dots and perovskite quantum dots; The quantum dot photosensitive material unit responsive to the infrared light band includes at least one of mercuric sulfide, mercuric selenide, indium antimonide, lead selenide, lead sulfide, lead selenide, mercuric telluride, mercuric selenide, cadmium sulfide, cadmium telluride, cadmium selenide, silver sulfide, silver telluride, and silver selenide.

6. The broadband integrated spectrometer according to any one of claims 1-4, characterized in that, The infrared light band includes at least two of the following: short-wave infrared, mid-wave infrared, and long-wave infrared.

7. The broadband integrated spectrometer according to any one of claims 1-4, characterized in that, The readout circuit includes multiple electrodes; The quantum dot photosensitive material unit is connected to the electrode, and the electrode transmits the photoelectric signal generated by the quantum dot photosensitive material unit.

8. The broadband integrated spectrometer according to claim 7, characterized in that, It also includes a signal processing module connected to the electrodes; The signal processing module receives the photoelectric signal transmitted by the electrode and processes it to obtain a spectral image or spectral data.

9. The broadband integrated spectrometer according to any one of claims 1-4, characterized in that, It also includes an encapsulation layer, located at least on the side of the quantum dot array photosensitive layer away from the readout circuit, covering the exposed surface of the quantum dot array photosensitive layer.

10. The broadband integrated spectrometer according to claim 9, characterized in that, The thickness of the encapsulation layer is less than 50 nanometers.

Images