High-density bridge package method and package structure

Abstract

This application provides a high-density bridging packaging method and packaging structure. The method includes providing a first carrier having a first chip and a first metal pillar. The first chip and the first metal pillar are disposed on the same side of the first carrier and spaced apart. The first chip has a first pad. A protective layer is provided on the surface of the first chip, and the protective layer has a first groove exposing the first pad. A protective layer is formed within the first groove. A first molding compound covering the first chip and the first metal pillar is formed on the first carrier. The protective layer is removed, and a second groove exposing the first pad is formed on the first molding compound. A first conductive pillar electrically connected to the first pad is formed in the second groove. A first wiring layer is formed on the first molding compound; the first wiring layer is electrically connected to the first metal pillar and the first conductive pillar, respectively. This avoids voids caused by insufficient filling of the molding compound due to excessively small gaps between the first conductive pillars, and ensures uniform gaps between the first conductive pillars, improving the reliability of the connection between the conductive pillar and the wiring layer.

Description

Technical Field

[0001] This invention relates to the field of semiconductor packaging technology, and in particular to a high-density bridging packaging method and packaging structure. Background Technology

[0002] With the rapid development of the semiconductor industry, chiplet technology employs a new design approach to package small chips with different functions together, forming a heterogeneous integrated chip package structure. Silicon bridge technology achieves electrical connections between chips by embedding small bridge chips with multiple RDL (redistribution layers) in the substrate, effectively reducing manufacturing costs while maintaining high-density interconnect capabilities. However, during the molding process, if the gaps between the copper pillars of the small bridge chips are too small, it can easily lead to insufficient filling of the molding compound, resulting in voids. Furthermore, thermal stress from molding warpage can cause gap shifts between the copper pillars of the small bridge chips, or between the copper pillars and the metal pillars of the substrate, ultimately affecting the contact area between the subsequent wiring layers and the metal pillars, thus impacting their conductivity. Summary of the Invention

[0003] The purpose of this invention is to provide a high-density bridging packaging method and packaging structure, which can avoid insufficient filling of the molding compound due to excessively small gaps between the first conductive pillars, and prevent voids in the structure. It ensures uniform gaps between the first conductive pillars, improves wiring accuracy, and enhances the conductivity of the wiring layer and the first conductive pillars.

[0004] In a first aspect, the present invention provides a high-density bridging packaging method, comprising:

[0005] A first carrier is provided having a first chip and a first metal pillar; wherein the first chip and the first metal pillar are disposed on the same side of the first carrier and there is a gap between the first chip and the first metal pillar; the first chip is provided with a first pad;

[0006] The first chip has a protective layer on the side of its surface away from the first carrier, and the protective layer has a first groove that exposes the first pad;

[0007] A protective layer is formed within the first groove;

[0008] A first encapsulation covering the first chip and the first metal pillar is formed on the first carrier;

[0009] Remove the protective layer to form a second groove on the first molding compound that exposes the first pad;

[0010] A first conductive post electrically connected to the first pad is formed in the second groove;

[0011] A first wiring layer is formed on the first molding compound; the first wiring layer is electrically connected to the first metal pillar and the first conductive pillar, respectively.

[0012] In an optional implementation, the step of forming a protective layer within the first groove includes:

[0013] A dummy block covering the first pad is mounted in the first groove;

[0014] Alternatively, a first adhesive layer covering the first pad may be formed within the first groove;

[0015] Alternatively, a hollow metal pillar covering the first pad can be mounted inside the first groove.

[0016] In an optional embodiment, the step of mounting a dummy block covering the first pad within the first groove includes:

[0017] The dummy block is directly attached into the first groove;

[0018] Alternatively, a first adhesive layer covering the first pad is formed in the first groove; a dummy block is then mounted on the first adhesive layer.

[0019] In an optional implementation, the step of directly attaching the dummy block into the first groove includes:

[0020] The dummy block is attached to the first pad using a second adhesive layer;

[0021] The step of attaching the dummy block to the first adhesive layer includes:

[0022] The dummy block is mounted to the first pad using a first adhesive layer; or, a second adhesive layer is formed on the first adhesive layer, and the dummy block is mounted to the first adhesive layer using the second adhesive layer.

[0023] In an optional embodiment, the step of providing a first carrier having a first chip and a first metal pillar includes: providing the first chip; the method for fabricating the first chip includes:

[0024] Wafers are mounted on the second carrier;

[0025] A protective layer having the first groove is formed on the wafer;

[0026] The wafer is cut to form the first chip.

[0027] In an optional embodiment, after the step of forming a protective layer with the first groove on the wafer, the method further includes:

[0028] The protective layer is formed within the first groove.

[0029] In an optional embodiment, the step of forming the protective layer within the first groove includes:

[0030] A protective adhesive is formed on the protective layer;

[0031] The protective adhesive is exposed and developed, retaining the protective adhesive in the first groove to form a first adhesive layer; the first adhesive layer serves as the protective layer.

[0032] In an optional implementation, the step of mounting the wafer on the second carrier includes:

[0033] A second bonding adhesive layer and an adhesive layer are sequentially formed on the second carrier;

[0034] In the step of dicing the wafer, the wafer is diced from the side away from the second carrier to the bonding adhesive layer, such that the first chip includes the adhesive layer.

[0035] In an optional embodiment, in the step of forming a protective layer in the first groove, the end of the protective layer away from the first pad is planar or convex.

[0036] In an optional implementation, the step of providing a first carrier having a first chip and a first metal pillar includes:

[0037] Provide a first vehicle with a first metal pillar;

[0038] The first chip is attached to the first vehicle;

[0039] The step of forming a protective layer in the first groove is completed before or after the step of mounting the first chip.

[0040] In an optional implementation, the step of removing the protective layer to form a second groove on the first molding compound that exposes the first pad includes:

[0041] A third groove is formed on the first molding compound by laser grooving, exposure development, or etching to expose the protective layer; the second groove is formed after the protective layer is removed.

[0042] Alternatively, the first molding compound can be thinned to expose the protective layer; the second groove can be formed after removing the protective layer.

[0043] Alternatively, the protective layer may be made of a hollow metal column; the first molding body may be thinned and the upper end of the hollow metal column may be removed so that the metal cavity of the hollow metal column forms the second groove.

[0044] In an optional embodiment, a third groove exposing the protective layer is formed on the first molding compound by laser grooving, exposure development, or etching; in the step of forming the second groove after removing the protective layer:

[0045] The protective layer is removed using an adhesive remover.

[0046] In an optional embodiment, the step of thinning the first molding compound to expose the protective layer; and forming the second groove after removing the protective layer:

[0047] The protective layer includes a second adhesive layer and a dummy block that are sequentially covered on the first pad;

[0048] The first chip and the protective layer are immersed in a chemical agent at a preset temperature to separate the dummy block and the second adhesive layer; the density of the dummy block is less than the density of the chemical agent, and the dummy block floats on the surface of the chemical agent;

[0049] The second adhesive layer is removed by ultrasonic cleaning in the chemical agent, forming a second groove that exposes the first pad.

[0050] In an optional embodiment, the preset temperature is between 80 and 150 degrees Celsius, at which the second adhesive layer loses its tackiness.

[0051] In a second aspect, the present invention provides a packaging structure, comprising: a substrate, wherein a first metal pillar penetrating the substrate is disposed therein; a first wiring layer connected to the first metal pillar is disposed on one side of the substrate, and a second wiring layer connected to the first metal pillar is disposed on the other side of the substrate;

[0052] A first chip is embedded in the substrate; the first chip has a first pad; a first conductive post is connected to the first pad; the first conductive post is electrically connected to the first wiring layer.

[0053] A second conductive post is provided on the side of the first pad away from the first wiring layer; the second conductive post and the second wiring layer are electrically connected.

[0054] In an optional embodiment, the first chip has a protective layer on the side with the first pad, and the protective layer has a first groove exposing the first pad; the first conductive post is disposed in the first groove and is electrically connected to the first pad.

[0055] In an optional implementation, the first chip is provided with an active wiring layer; the two ends of the active wiring layer are electrically connected to the first pad and the first conductive post, respectively.

[0056] In an optional embodiment, a second pad is provided between the first conductive post and the first wiring layer; and / or, a second pad is provided between the second conductive post and the second wiring layer.

[0057] In an optional embodiment, at least one end of the first metal pillar is provided with a third pad, which is electrically connected to the first wiring layer or the second wiring layer.

[0058] In an optional implementation, a second chip and a second molding compound are also included;

[0059] The second chip is disposed on one side of the first wiring layer and electrically connected to the first wiring layer, and / or the second chip is disposed on one side of the second wiring layer and electrically connected to the second wiring layer;

[0060] The second molding compound encapsulates the second chip.

[0061] In an optional embodiment, the substrate is a first encapsulation body, the thickness of which is less than the thickness of the second encapsulation body.

[0062] The high-density bridging packaging method and packaging structure provided in this invention have the following advantages:

[0063] The high-density bridging packaging method provided in this invention first forms a first molding compound on a first carrier, then forms a second groove on the first molding compound, and forms a first conductive post within the second groove. The first molding compound is formed before the first conductive post, which avoids insufficient filling of the molding compound due to excessively small gaps between the first conductive posts, and prevents voids in the first molding compound. Furthermore, the second groove can release molding stress, preventing the first conductive post from being affected by molding thermal stress, ensuring uniform gaps between the first conductive posts, thereby improving wiring accuracy and the conductivity of the wiring layer and the first conductive post. In addition, a protective layer is formed on the first pad, which effectively protects the first pad from damage during the formation of the first molding compound and the second groove, thereby improving the electrical connection performance between the first pad and the first conductive post.

[0064] The packaging structure provided in this invention is reliable and not easily delaminated. It can mitigate the impact of warpage on the gap of the first conductive pillars, achieve high wiring accuracy, and provide good conductivity. Furthermore, it effectively protects the first pad and improves conductivity. Attached Figure Description

[0065] To more clearly illustrate the specific embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the specific embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of the present invention. For those skilled in the art, other drawings can be obtained from these drawings without creative effort.

[0066] Figure 1 This is one of the process schematic diagrams of the high-density bridging packaging method provided in the embodiments of the present invention;

[0067] Figure 2 This is a second schematic diagram of the manufacturing process of the high-density bridging packaging method provided in an embodiment of the present invention.

[0068] Figure 3 This is a schematic diagram of a first structure of the first chip in the high-density bridging packaging method provided in an embodiment of the present invention.

[0069] Figure 4 This is a schematic diagram of a second structure of the first chip in the high-density bridging packaging method provided in an embodiment of the present invention.

[0070] Figure 5 This is a schematic diagram of a structure in which a third groove exposing a protective layer is formed on a first molding compound in a high-density bridging encapsulation method provided in an embodiment of the present invention.

[0071] Figure 6 This is a schematic diagram of the structure for forming a second groove by removing the protective layer in the high-density bridging packaging method provided in this embodiment of the invention;

[0072] Figure 7 This is a schematic diagram of the structure in which a first metal layer is formed in the second groove in the high-density bridging packaging method provided in an embodiment of the present invention.

[0073] Figure 8 This is a schematic diagram of the structure in which a first conductive pillar is formed in the second groove in the high-density bridging packaging method provided in an embodiment of the present invention.

[0074] Figure 9 The third schematic diagram of the manufacturing process of the high-density bridging packaging method provided in the embodiments of the present invention;

[0075] Figure 10 Fourth schematic diagram of the manufacturing process of the high-density bridging packaging method provided in the embodiments of the present invention;

[0076] Figure 11 A schematic diagram of the fabrication process of the first chip for the high-density bridging packaging method provided in this embodiment of the invention;

[0077] Figure 12A schematic diagram of the structure of the protective adhesive forming protrusions in the first chip in the high-density bridging packaging method provided in the embodiments of the present invention;

[0078] Figure 13 A schematic diagram of the structure of a raised first adhesive layer formed on a first chip in the high-density bridging packaging method provided in this embodiment of the invention;

[0079] Figure 14 In the high-density bridging packaging method provided in this embodiment of the invention, a schematic diagram of a third groove formed on the first molding compound when a raised first adhesive layer is formed on the first chip is shown.

[0080] Figure 15 This is a process diagram illustrating the use of dummy blocks as the protective layer in the high-density bridging packaging method provided in this embodiment of the invention.

[0081] Figure 16 for Figure 15 A magnified view of a portion of point A in the middle;

[0082] Figure 17 This is a schematic diagram of another process in which the protective layer of the high-density bridging packaging method provided in the embodiments of the present invention uses a dummy block;

[0083] Figure 18 for Figure 17 A magnified view of a portion of point B in the middle;

[0084] Figure 19 This is a schematic diagram of a process in which the protective layer of the high-density bridging packaging method provided in an embodiment of the present invention uses hollow metal pillars.

[0085] Figure 20 A schematic diagram of the first packaging structure provided in an embodiment of the present invention;

[0086] Figure 21 This is a schematic diagram of a second packaging structure provided in an embodiment of the present invention.

[0087] Icons: 110 - First carrier; 111 - First bonding adhesive layer; 112 - Second metal layer; 113 - First metal pillar; 114 - First photoresist; 115 - First opening; 120 - First chip; 121 - First pad; 122 - Second conductive pillar; 123 - Protective layer; 124 - First groove; 125 - Active wiring layer; 126 - Adhesive layer; 127 - Protective adhesive; 128 - Protective layer; 1281 - First adhesive layer; 1283 - Hollow metal pillar; 129 - Dummy block; 1291 - Second adhesive layer; 130 - First molding compound; 131 - Second recess; 132 - Third recess; 140 - First conductive post; 141 - First metal layer; 150 - First wiring layer; 151 - First dielectric layer; 152 - Second dielectric layer; 153 - First solder ball; 160 - Second chip; 161 - Underfill adhesive; 162 - Second molding compound; 170 - Second wiring layer; 171 - Second solder ball; 180 - Second carrier; 181 - Second debonding adhesive layer; 182 - Wafer; 200 - Package structure; 220 - Second pad; 230 - Third pad. Detailed Implementation

[0088] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. The components of the embodiments of the present invention described and shown in the accompanying drawings can generally be arranged and designed in various different configurations.

[0089] Therefore, the following detailed description of the embodiments of the invention provided in the accompanying drawings is not intended to limit the scope of the claimed invention, but merely to illustrate selected embodiments of the invention. All other embodiments obtained by those skilled in the art based on the embodiments of the invention without inventive effort are within the scope of protection of the invention.

[0090] It should be noted that similar labels and letters in the following figures indicate similar items. Therefore, once an item is defined in one figure, it does not need to be further defined and explained in subsequent figures.

[0091] In the description of this invention, it should be noted that the terms "center," "upper," "lower," "left," "right," "vertical," "horizontal," "inner," and "outer," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, or the orientation or positional relationship commonly used when the product of this invention is in use. They are only for the convenience of describing this invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this invention. In addition, the terms "first," "second," "third," etc., are only used to distinguish descriptions and should not be construed as indicating or implying relative importance.

[0092] Furthermore, terms such as "horizontal," "vertical," and "sag" do not imply that components must be absolutely horizontal or suspended, but rather that they can be slightly tilted. For example, "horizontal" simply means that its direction is more horizontal relative to "vertical," and does not mean that the structure must be completely horizontal, but can be slightly tilted.

[0093] In the description of this invention, it should also be noted that, unless otherwise explicitly specified and limited, the terms "set," "install," "connect," and "link" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in this invention based on the specific circumstances.

[0094] The following detailed description of some embodiments of the present invention is provided in conjunction with the accompanying drawings. Unless otherwise specified, the following embodiments and features can be combined with each other.

[0095] The high-density bridging packaging method proposed in this invention can avoid insufficient filling of the molding compound due to excessively small gaps between the first conductive pillars, thus preventing voids in the structure. It ensures uniform gaps between the first conductive pillars, improves wiring accuracy, and enhances the conductivity of the wiring layer and the first conductive pillars.

[0096] This high-density bridging packaging method mainly includes the following steps:

[0097] Please combine Figures 1 to 3S1. A first carrier 110 is provided, having a first chip 120 and a first metal pillar 113. The first chip 120 and the first metal pillar 113 are located on the same side of the first carrier 110, and there is a gap between them. The first chip 120 has a first pad 121. A protective layer 123 is provided on the surface of the first chip 120 away from the first carrier 110, and the protective layer 123 has a first groove 124 exposing the first pad 121.

[0098] Optionally, a first carrier 110 with a first metal pillar 113 is provided. A first debonding adhesive layer 111 is coated on the surface of the first carrier 110. The first debonding adhesive layer 111 can be separated by irradiation with ultraviolet light or laser debonding. A second metal layer 112 is formed on the surface of the first debonding adhesive layer 111. The second metal layer 112 can be formed by metal sputtering or other methods, which are not specifically limited here. The second metal layer 112 can be a single layer, such as a titanium layer or a copper layer. The second metal layer 112 can also be a multilayer structure, such as including a two-layer structure, a copper layer and a titanium layer, or it can be more than one layer.

[0099] After coating the surface of the second metal layer 112 with a first photoresist 114 using a coating process, a first opening 115 is formed on the first photoresist 114 using an exposure and development method. A first metal pillar 113 is then formed in the first opening 115 using an electroplating process. In this electroplating process, the second metal layer 112 can serve as a seed layer for electroplating. After forming the first metal pillar 113, the first photoresist 114 is removed using a photoresist stripper. This completes the fabrication of the first metal pillar 113.

[0100] Please combine Figure 2 Optionally, a first chip 120 is mounted on the first carrier 110. The first chip 120 is attached to the first carrier 110 via an adhesive layer 126, which may be a DAF adhesive layer. The first pad 121 of the first chip 120 faces upward, meaning the first pad 121 is located on the side of the first chip 120 away from the first carrier 110. The adhesive layer 126 is cured using a baking process, thus fixing the first chip 120 to the first carrier 110.

[0101] In this embodiment, the first chip 120 is a bridge chip. The first chip 120 also includes a second conductive post 122 connected to the first pad 121. The second conductive post 122 extends from the first pad 121 to the surface of the first chip 120 away from the first pad 121. It should be noted that in some embodiments, the first pad 121 and the second conductive post 122 can be integrated, that is, the end face of the second conductive post 122 can serve as the first pad 121. In this way, the fabrication process of the first pad 121 can be omitted, the process is simpler, and the production efficiency is higher.

[0102] Optionally, the protective layer 123 may be made of polyimide, benzocyclobutene, silicon carbide, or silicon oxide.

[0103] S2. A protective layer 128 is formed within the first groove 124. It can be understood that the protective layer 128 can be pre-prepared during the fabrication of the first chip 120. Please refer to... Figure 4 Alternatively, a protective layer 128 may be formed within the first groove 124 after the first chip 120 is mounted onto the first carrier 110. No specific limitation is made here. In this embodiment, the protective layer 128 covers the bottom of the first groove 124, that is, the protective layer 128 covers the first pad 121, and the protective layer 128 extends from the sidewall of the first groove 124 and covers a portion of the protective layer 123.

[0104] S3. A first encapsulation 130 covering the first chip 120 and the first metal pillar 113 is formed on the first carrier 110. Optionally, the first encapsulation 130 is formed on the first carrier 110 using injection molding or stencil printing processes.

[0105] Optionally, the first molding compound 130 can be thinned using mechanical grinding, so that the end face of the first metal pillar 113 is exposed from the surface of the first molding compound 130. That is, the end face of the first metal pillar 113 is flush with the surface of the first molding compound 130. In this embodiment, the height of the first chip 120 is less than the height of the first metal pillar 113. After grinding the first molding compound 130, the first chip 120 is still completely embedded in the first molding compound 130. It is worth noting that thinning the first molding compound 130 can reduce the overall thickness of the first molding compound 130 and also reduce the height of the first metal pillar 113, thereby shortening the electrical connection path in the packaging structure 200 and improving transmission efficiency. Optionally, the height of the first metal pillar 113 is 100 micrometers to 350 micrometers, which is also the thickness of the first molding compound 130 after thinning. Furthermore, thinning the first molding compound 130 shortens the distance between its surface and the protective layer 128, thereby reducing the groove depth of the second groove 131 and improving grooving efficiency. Additionally, if the second groove 131 is grooved using laser technology, a shallower groove depth requires less laser energy, reducing heat radiation and mitigating the thermal impact of laser heat radiation on the surrounding first molding compound 130, preventing cracking or softening of the first molding compound 130. Optionally, the depth of the second groove 131 can be between 5 micrometers and 50 micrometers.

[0106] S4. Remove the protective layer 128 and form a second groove 131 on the first molding compound 130 to expose the first solder pad 121.

[0107] Please combine Figure 5Optionally, a third groove 132 exposing the protective layer 128 can be formed on the first molding compound 130 using laser grooving, dry etching, or exposure and development. It should be noted that the opening diameter D2 of the third groove 132 is larger than the opening diameter D1 of the first groove 124. In this embodiment, the opening diameter D1 of the first groove 124 is approximately 5 micrometers to 120 micrometers.

[0108] Please combine Figure 6 The protective layer 128 is then removed using a remover, thereby forming a second groove 131 exposing the first pad 121 and part of the protective layer 123. The remover can be an alkaline or acidic remover, such as potassium hydroxide (KOH), sodium hydroxide (NaOH), or a mixture of concentrated sulfuric acid and hydrogen peroxide. Alternatively, in some embodiments, the product exposing the protective layer 128 can be immersed in a chemical agent and ultrasonically cleaned to remove the protective layer 128, thereby forming the second groove 131 exposing the first pad 121 and part of the protective layer 123. It is understood that the groove diameter of the second groove 131 is equal to the groove diameter of the third groove 132.

[0109] In this way, the second groove 131 not only exposes the first pad 121, but also a portion of the protective layer 123. The protective layer 123 can disperse thermal stress, avoid stress concentration in the connection area between the first pad 121 and the first conductive post 140, significantly improve the resistance to thermal cycling in the connection area between the first pad 121 and the first conductive post 140, and improve the insulation performance around the first pad 121, reducing reliability failures during long-term use.

[0110] S5. A first conductive post 140 is formed in the second groove 131, which is electrically connected to the first pad 121.

[0111] Please combine Figure 7 Optionally, a first metal layer 141 electrically connected to the first pad 121 is first formed in the second groove 131. The first metal layer 141 covers the surface of the first pad 121 and the surface of the protective layer 123 exposed from the second groove 131. The first metal layer 141 can be formed by electroplating, sputtering, or electroless plating. It should be noted that, since the protective layer 123 is provided in advance, when preparing the first metal layer 141, the first metal layer 141 can extend from the first pad 121 to the surface of the protective layer 123, thereby improving the adhesion.

[0112] Please combine Figure 8Then, a first conductive pillar 140 is formed on the first metal layer 141. The first conductive pillar 140 can be prepared by electroplating. The first metal layer 141 can serve as a seed layer for electroplating the first conductive pillar 140, which is beneficial to improving the electroplating quality. The first metal layer 141 can also enhance the bonding force between the first conductive pillar 140 and the first pad 121.

[0113] In this embodiment, the first molding compound 130 is formed before the first conductive post 140, avoiding voids caused by insufficient filling of the first molding compound 130 due to the small gap between the first conductive posts 140, thus improving structural reliability. Furthermore, the design of the first metal layer 141 and the protective layer 123 further enhances structural bonding and reliability. In particular, the protective layer 123 can disperse thermal stress, preventing stress concentration in the connection area between the first pad 121 and the first conductive post 140, significantly improving the resistance to thermal cycling in the connection area, and enhancing the insulation performance around the first pad 121, reducing reliability failures during long-term use.

[0114] Please combine Figure 9 S6. A first wiring layer 150 is formed on the first molding compound 130; the first wiring layer 150 is electrically connected to the first metal pillar 113 and the first conductive pillar 140 respectively.

[0115] Optionally, a first dielectric layer 151 is formed on the first encapsulant 130 using a spin coating process, such as spin coating or spray coating. The material of the first dielectric layer 151 can be polyimide or benzocyclobutene, etc. A photomask with a patterned layer is placed over the first dielectric layer 151, and an exposure and development process is used to form patterned layer openings on the first dielectric layer 151. Metal is then filled into the patterned layer openings using electroplating, sputtering, or chemical plating to form a first wiring layer 150.

[0116] A second dielectric layer 152 is formed on a first dielectric layer 151 using a spin coating or spray coating process. The material of the second dielectric layer 152 includes, but is not limited to, polyimide or benzocyclobutene. A photomask with a patterned layer is placed over the second dielectric layer 152. A first opening is formed on the second dielectric layer 152 using an exposure and development process, exposing the first wiring layer 150. Metal is filled into the first opening using electroplating, sputtering, or chemical plating to form a first solder ball 153. Specifically, metal is first electroplated into the first opening to form a first bump, which is electrically connected to the first wiring layer 150. Optionally, the first bump is a copper pillar. Formic acid is used as a reducing agent, and high temperature and chemical reaction are used to remove oxides from the surface of the first bump, which helps to promote the bonding force between the first bump and the solder. Then, at least one of titanium, titanium-tungsten, nickel, tin-silver, tin-silver-copper, and tin-bismuth is electroplated onto the surface of the first bump to form the first solder ball 153.

[0117] S7, mount the second chip 160.

[0118] Optionally, the second chip 160 is mounted on one side of the second dielectric layer 152 using a hot-press bonding process or a flip-chip mounting process, and the second chip 160 is electrically connected to the first solder ball 153. An underfill adhesive 161 is formed using a dispensing process. The underfill adhesive 161 protects the solder structure at the first solder ball 153. A second molding compound 162 is formed on the second dielectric layer 152 to encapsulate the second chip 160. The thickness of the second molding compound 162 is greater than the thickness of the first molding compound 130, which prevents the first molding compound 130 from warping or deforming after the first carrier 110 is debonded, thus improving the packaging quality.

[0119] S8. A second wiring layer 170 is formed on the side of the first molding compound 130 away from the first wiring layer 150. The second wiring layer 170 is electrically connected to the first metal post 113 and the second conductive post 122, respectively.

[0120] Remove the first carrier 110. Optionally, debond the first carrier 110 and the first encapsulant 130 by irradiating with ultraviolet light. It should be noted that after removing the first carrier 110, the first chip 120 can provide support, preventing warping deformation of the first encapsulant 130 and the second encapsulant 162 due to stress contraction. Furthermore, the thickness of the second encapsulant 162 is greater than the thickness of the first encapsulant 130, which helps to mitigate warping deformation of the first encapsulant 130 after removing the first carrier 110.

[0121] Please combine Figure 10 The product is flipped so that the second metal layer 112 faces upwards. The second molding compound 162 provides support. The second metal layer 112 and the adhesive layer 126 on the back of the first chip 120 are removed by grinding, exposing the first metal pillar 113 and the second conductive pillar 122 on the surface of the first molding compound 130, respectively, and placing them on the same plane. It is easy to understand that when removing the adhesive layer 126, the first molding compound 130 is also thinned by grinding, and the first metal pillar 113 is also subject to some grinding. The grinding process changes the surface roughness of the first molding compound 130, thereby improving the adhesion between the second wiring layer 170 and the first metal pillar 113 and the second conductive pillar 122, as well as improving the adhesion between the first molding compound 130 and the dielectric layer.

[0122] A third dielectric layer, a second wiring layer 170, a fourth dielectric layer, and a second solder ball 171 are formed on the side of the first molding compound 130 away from the first wiring layer 150. The process steps are similar to those in step S6 described above, and will not be repeated here.

[0123] S9. Using a cutting process, the packaged product is cut and separated into individual products, completing the manufacturing process.

[0124] It should be noted that in some embodiments, the second chip 160 may also be mounted on one side of the second wiring layer 170, or the second chip 160 may be mounted on one side of the first wiring layer 150 and one side of the second wiring layer 170 respectively, without specific limitations.

[0125] In some embodiments, in step S2, the protective layer 128 is prepared in advance when the first chip 120 is fabricated. The fabrication method of the first chip 120 is roughly as follows:

[0126] Please combine Figure 11 Step S201: Mount wafer 182 on the second carrier 180.

[0127] A second carrier 180 is provided, and a second debonding adhesive layer 181 and an adhesive layer 126 are sequentially applied to the surface of the second carrier 180. The adhesive layer 126 may be a DAF adhesive layer. A wafer 182 with a bridging chip is mounted onto the adhesive layer 126. The bridging chip has a first pad 121 located on the side of the bridging chip away from the second carrier 180.

[0128] Step S202: Form a protective layer 123 with a first groove 124 on the wafer 182.

[0129] A protective layer 123 is formed on the surface of wafer 182 using a spin coating process. The protective layer 123 can be a dielectric material, such as polyimide, benzocyclobutene, silicon carbide, or silicon oxide. A first groove 124 is formed using methods such as exposure development or dry etching, exposing the first pad 121.

[0130] Step S203: A protective layer 128 is formed in the first groove 124.

[0131] Optionally, a protective adhesive 127 is formed on the protective layer 123. The protective adhesive 127 is exposed and developed, retaining the protective adhesive 127 in the first groove 124 to form a first adhesive layer 1281. The first adhesive layer 1281 serves as the protective layer 128.

[0132] Specifically, a protective adhesive 127 is coated onto the surface of the protective layer 123 using a spin coating process. The protective adhesive 127 is a second photoresist, which is baked into a film by continuous heating at a certain temperature (90°C to 100°C) for 1-2 minutes. An exposure and development process is used, utilizing the cross-linking reaction of the polymer in the exposed area of ​​the photomask opening. This prevents the second photoresist in the first pad 121 area from dissolving during development, while the second photoresist in the unexposed areas (areas other than the first pad 121) is dissolved and removed by the developer, thus preserving the protective adhesive 127 at the first pad 121. A first adhesive layer 1281 is formed on the first pad 121, serving as a protective layer 128. This first adhesive layer 1281 protects the first pad 121 of the first chip 120 from laser damage during subsequent laser grooving to form the second groove 131.

[0133] Step S204: Cut wafer 182 to form the first chip 120.

[0134] The wafer 182 is cut into individual chips using a dicing process, thus completing the fabrication of the first chip 120.

[0135] Optionally, in the cutting process, the cutting depth penetrates through the adhesive layer 126 to the second bonding adhesive layer, ensuring that the adhesive layer 126 is retained in each individual first chip 120 product. This facilitates the subsequent mounting of the first chip 120. The adhesive application process during the mounting of the first chip 120 can be omitted, and it can be directly bonded and fixed to the first carrier 110 or other carriers using the adhesive layer 126, improving packaging efficiency. The second carrier 180 is removed after cutting.

[0136] Of course, in some other embodiments, such as when the protective layer 128 needs to be formed after the first chip 120 is mounted onto the first carrier 110, the first chip 120 can be directly cut into wafer 182 after the protective layer 123 with the first groove 124 is formed when the first chip 120 is prepared, thus omitting step S203.

[0137] It should be noted that in the process of forming the protective adhesive 127 on the protective layer 123, the protective adhesive 127 is either planar or raised at the first groove 124. Figure 11 The protective adhesive 127 shown is in a straight shape. Figure 12 The protective adhesive 127 shown is raised, and the structure of the first chip 120 formed after cutting is as follows: Figure 13 As shown.

[0138] Please combine Figure 14Optionally, the protrusion can be hemispherical, teardrop-shaped, or any other protruding shape. Compared to a flat shape, a protrusion increases the volume and height of the first adhesive layer 1281, thereby reducing the volume of the first encapsulant 130 removed during laser grooving to form the second groove 131, shortening the grooving time, and improving efficiency. Furthermore, when the first adhesive layer 1281 is protruding, the first encapsulant 130 in contact with the protrusion is more easily detached during laser grooving, reducing the amount of residual first encapsulant 130 adhering to the first adhesive layer 1281. Moreover, a hemispherical design, where the curvature of the surface affects the direction and intensity of laser scattering, alters the laser propagation direction, enabling laser scattering and better protecting the first pad 121 from laser damage.

[0139] Optionally, in step S4, if the third groove 132 is formed by laser grooving, the residue in the third groove 132 needs to be cleaned using ultrasonic cleaning. During the cleaning process, the product is placed in a chemical agent and ultrasonic cleaning is used to remove the first adhesive layer 1281, thereby exposing the first solder pad 121.

[0140] Optionally, if the first adhesive layer 1281 is raised, during the cleaning process, the raised first adhesive layer 1281 is affected by gravity, which is more conducive to the falling off of the first adhesive layer 1281 and the residue of the first molding body 130, thereby improving cleaning efficiency and cleaning quality.

[0141] In some embodiments, the second groove 131 can also be formed by methods other than laser grooving. For example, it can be formed by attaching a dummy block 129 or a hollow metal pillar.

[0142] Optionally, in the step of mounting the first chip 120 on the first carrier 110, the first chip 120 has a protective layer 123, the protective layer 123 has a first groove 124, exposing the first pad 121.

[0143] Please combine Figure 15 and Figure 16 The protective layer 128 includes a dummy block 129. The dummy block 129 is mounted within the first recess 124. Optionally, the dummy block 129 is mounted within the first recess 124 via a second adhesive layer 1291. The second adhesive layer 1291 can be pre-prepared on the first chip 120 or the dummy block 129. Alternatively, a layer of the second adhesive layer 1291 can be applied to the first pad 121, and then the dummy block 129 can be attached to the second adhesive layer 1291; no specific limitation is made here. The second adhesive layer 1291 can be a DAF adhesive layer.

[0144] Optionally, the dummy block 129 can be made of aluminum chip or a low-density material such as carbon fiber. The shape of the dummy block 129 is not limited, and the end of the dummy block 129 away from the first pad 121 can be flat or convex.

[0145] A first molding compound 130 is formed on a first carrier 110, encapsulating a first chip 120 and a first metal pillar 113. During the molding process, a dummy block 129 protects the first pad 121. The first molding compound 130 is thinned by mechanical grinding, so that the end face of the first metal pillar 113 and the dummy block 129 are exposed from the surface of the first molding compound 130.

[0146] Clean and remove dummy block 129 to form second groove 131 that exposes first pad 121.

[0147] Optionally, using a de-adhesive process, the product with dummy block 129 is immersed in a chemical agent at a preset temperature. During immersion, dummy block 129 is placed face down, ensuring it is completely submerged in and in full contact with the chemical agent. The preset temperature is 80 to 150 degrees Celsius, at which point the second adhesive layer 1291 loses its tackiness. After immersion, dummy block 129 and the second adhesive layer 1291 separate. Due to the lower density of dummy block 129 compared to the chemical agent, it floats on the surface of the chemical agent. Thus, the second adhesive layer 1291 remains in complete contact with the chemical agent. Combined with ultrasonic cleaning in the chemical agent, residues on the first solder pad 121 can be quickly and thoroughly removed, including the second adhesive layer 1291. This allows the formation of a second groove 131 on the first molding compound 130, exposing the first solder pad 121. It can be understood that the volume of the dummy block 129 and the second adhesive layer 1291 is the volume of the second groove 131. The depth of the second groove 131 can be controlled by controlling the sum of the heights of the dummy block 129 and the second adhesive layer 1291. The diameter of the second groove 131 can also be controlled by the cross-sectional dimensions of the dummy block 129 and the second adhesive layer 1291, ensuring that the diameter of the second groove 131 is greater than the diameter of the first groove 124.

[0148] In this embodiment, the dummy block 129 is mounted. After the first molding compound 130 is formed, the dummy block 129 is removed to form the second groove 131. This avoids the use of laser grooving process, which can avoid heat radiation or burns to the first pad 121 caused by laser grooving, thus effectively protecting the first pad 121 and improving the conductivity of the first pad 121.

[0149] It should be noted that in the above embodiment, the first pad 121 of the first chip 120 does not have a first adhesive layer 1281 as a protective layer 128. A dummy block 129 can be directly mounted on the first pad 121.

[0150] Please combine Figure 17 and Figure 18 In some other embodiments, the structure of the first chip 120 may include a first adhesive layer 1281, that is, the first adhesive layer 1281 covers the first pad 121. The first adhesive layer 1281 can be pre-prepared when manufacturing the first chip 120. In this case, the dummy block 129 can be mounted onto the first adhesive layer 1281. Wherein, if the first adhesive layer 1281 is adhesive, the dummy block 129 can be directly fixed and bonded, omitting the second adhesive layer 1291. If the first adhesive layer 1281 is not adhesive or has low adhesiveness, the second adhesive layer 1291 can be covered on the first adhesive layer 1281, and the second adhesive layer 1291 is used to bond and fix the dummy block 129. The subsequent process is similar. After forming the first molding compound 130, the first molding compound 130 is ground to expose the dummy block 129. Immersed in a chemical agent, the second adhesive layer 1291 loses its adhesiveness, and the dummy block 129 and the second adhesive layer 1291 separate. Furthermore, the dummy block 129 floats on the surface of the chemical agent due to its low density. The first adhesive layer 1281 and the second adhesive layer 1291 are removed by ultrasonic cleaning, thereby forming a second groove 131 on the first molding compound 130 that exposes the first solder pad 121.

[0151] Combination Figure 19 In some other embodiments, the protective layer 128 includes hollow metal pillars 1283.

[0152] A first chip 120 is mounted on a first carrier 110. The first chip 120 has a protective layer 123 on its surface, and the protective layer 123 has a first groove 124 exposing a first pad 121. A hollow metal pillar 1283 is directly mounted at the first groove 124. In this embodiment, the hollow metal pillar 1283 is mounted on the protective layer 123, and the cavity of the hollow metal pillar 1283 communicates with the first groove 124. The inner diameter of the hollow metal pillar 1283 is larger than the diameter of the first groove 124.

[0153] A first molding compound 130 is formed. The first molding compound 130 is ground, and the upper end of the hollow metal pillar 1283 is removed to expose the metal cavity. This metal cavity can serve as a second groove 131. Metal is directly filled into the second groove 131 to form a first conductive pillar 140. In this embodiment, no laser grooving process is required, no chemical cleaning and adhesive removal are required, and the placement of the first metal layer 141 (seed layer) can be omitted. The sidewall of the hollow metal pillar 1283 can be used as a seed layer for electroplating, making the process simpler and improving packaging efficiency.

[0154] Optionally, when grinding the first molding compound 130, the end face of the first metal pillar 113 is exposed, which facilitates the subsequent electrical connection of the first wiring layer 150 with the first conductive pillar 140 and the first metal pillar 113 respectively.

[0155] Please combine Figure 20 This invention also provides a packaging structure 200, which can be manufactured using the aforementioned high-density bridging packaging method. The packaging structure 200 includes a substrate and a first chip 120 embedded within the substrate. A first metal pillar 113 penetrating the substrate is provided within the substrate; a first wiring layer 150 connected to the first metal pillar 113 is provided on one side of the substrate, and a second wiring layer 170 connected to the first metal pillar 113 is provided on the other side. The first chip 120 has a first pad 121 and a second conductive pillar 122 electrically connected to the first pad 121; a first conductive pillar 140 is connected to the first pad 121; the first conductive pillar 140 and the first wiring layer 150 are electrically connected. The second conductive pillar 122 and the second wiring layer 170 are electrically connected. In this embodiment, the second conductive pillar 122 is connected to the side of the first pad 121 away from the first wiring layer 150. This achieves both high-density packaging and reduces substrate warpage. The first chip 120 can be a device such as an inductor, voltage regulator, resistor, capacitor, transistor, or diode, which facilitates high-density interconnection and the formation of an integrated circuit (IC) package. The first chip 120 serves as the IC chip within the IC package. The IC chip can be a system-on-a-chip (SoC). The IC chip is electrically coupled to other IC chips and / or other components within the IC package via wiring layers electrically coupled to the substrate. The IC chip can also be electrically coupled to other circuits outside the IC package via electrical connections of the external metal interconnects of the IC package. For example, one or more embedded capacitors can provide decoupling capacitance for the power distribution network (PDN) within the IC package to reduce current resistance (IR) drop. Furthermore, the active wiring layer 125 of the embedded capacitor is disposed between the IC chip and the package substrate to minimize the distance between the embedded capacitor and the IC chip. This reduces parasitic inductance in the wiring between the embedded capacitor and the IC chip, thereby reducing IR drop in the PDN and also helps reduce PDN noise.

[0156] Optionally, the first chip 120 has a protective layer 123 on one side where the first pad 121 is located. The protective layer 123 has a first groove 124 exposing the first pad 121. A first conductive post 140 is located in the first groove 124 and electrically connected to the first pad 121. A first metal layer 141 is provided between the first conductive post 140 and the first pad 121. This can improve the reliability of the connection between the first pad 121 and the first conductive post 140, resulting in better bonding and conductivity. The protective layer 123 can disperse thermal stress, avoid stress concentration in the connection area between the first pad 121 and the first conductive post 140, significantly improve the resistance to thermal cycling in the connection area, and improve the insulation performance around the first pad 121, reducing reliability failures during long-term use.

[0157] Please combine Figure 21 Optionally, the first chip 120 is provided with an active wiring layer 125; the two ends of the active wiring layer 125 are electrically connected to the first pad 121 and the first conductive post 140, respectively. The design of the active wiring layer 125 can redistribute the pads, increase the gap between the pads, and thus increase the gap between the first conductive posts 140, avoiding bridging short circuits between the first metal post 113 and the active wiring layer 125 during the polishing process. Of course, in some embodiments, the active wiring layer 125 can be directly disposed on the second conductive post 122, omitting the structure of the first pad 121; this is not specifically limited here.

[0158] Optionally, a second pad 220 is provided between the first conductive post 140 and the first wiring layer 150; and / or, a second pad 220 is provided between the second conductive post 122 and the second wiring layer 170. The second pad 220 can be provided on either side of the first chip 120, or on both sides of the first chip 120, thereby increasing the contact area between the first conductive post 140 and the first wiring layer 150, or increasing the contact area between the second conductive post 122 and the second wiring layer 170, improving conductivity and connection reliability. The cross-sectional dimension of the second pad 220 is greater than or equal to the cross-sectional dimension of the first conductive post 140. If the cross-sectional dimension of the second pad 220 is greater than the cross-sectional dimension of the first conductive post 140, the contact area with the wiring layer can be increased, improving conductivity and connection reliability. If the cross-sectional dimension of the second pad 220 is equal to the cross-sectional dimension of the first conductive post 140, the conductivity of the first conductive post 140 can be increased.

[0159] Optionally, at least one end of the first metal pillar 113 is provided with a third pad 230, which is electrically connected to the first wiring layer 150 or the second wiring layer 170. The third pad 230 can be located on either side of the first metal pillar 113 or on both sides of the first metal pillar 113, thereby increasing the contact area between the first metal pillar 113 and the first wiring layer 150 or the second wiring layer 170, improving conductivity and connection reliability. Similarly, the cross-sectional dimension of the third pad 230 is greater than or equal to the cross-sectional dimension of the first metal pillar 113.

[0160] Optionally, the package structure 200 further includes a second chip 160 and a second molding compound 162. The second chip 160 is disposed on one side of the first wiring layer 150 and electrically connected to the first wiring layer 150, or the second chip 160 is disposed on one side of the second wiring layer 170 and electrically connected to the second wiring layer 170. Alternatively, the second chip 160 is disposed on both sides of the substrate. The second molding compound 162 covers the second chip 160. This further increases the chip integration density. Optionally, the substrate uses a first molding compound 130, and the thickness of the first molding compound 130 is less than the thickness of the second molding compound 162. This effectively mitigates warping deformation caused by thermal stress after removing the first carrier 110, improving the quality of the package structure 200.

[0161] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, and not to limit them; although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some or all of the technical features; any modifications, equivalent substitutions, improvements, etc., should be included within the protection scope of the present invention.

Claims

1. A high-density bridging packaging method, characterized in that, include: A first carrier is provided having a first chip and a first metal pillar; wherein the first chip and the first metal pillar are disposed on the same side of the first carrier and there is a gap between the first chip and the first metal pillar; the first chip is provided with a first pad; The first chip has a protective layer on the side of its surface away from the first carrier, and the protective layer has a first groove that exposes the first pad; A protective layer is formed within the first groove; A first encapsulation covering the first chip and the first metal pillar is formed on the first carrier; Remove the protective layer to form a second groove on the first molding compound that exposes the first pad; A first conductive post electrically connected to the first pad is formed in the second groove; A first wiring layer is formed on the first molding compound; the first wiring layer is electrically connected to the first metal pillar and the first conductive pillar, respectively.

2. The high-density bridging packaging method according to claim 1, characterized in that, The step of forming a protective layer in the first groove includes: A dummy block covering the first pad is mounted in the first groove; Alternatively, a first adhesive layer covering the first pad may be formed within the first groove.

3. The high-density bridging packaging method according to claim 2, characterized in that, The step of mounting a dummy block covering the first pad within the first groove includes: The dummy block is directly attached into the first groove; Alternatively, a first adhesive layer covering the first pad is formed in the first groove; a dummy block is then mounted on the first adhesive layer.

4. The high-density bridging packaging method according to claim 3, characterized in that, The step of directly attaching the dummy block into the first groove includes: The dummy block is attached to the first pad using a second adhesive layer; The step of attaching the dummy block to the first adhesive layer includes: The dummy block is mounted to the first pad using a first adhesive layer; or, a second adhesive layer is formed on the first adhesive layer, and the dummy block is mounted to the first adhesive layer using the second adhesive layer.

5. The high-density bridging packaging method according to claim 1, characterized in that, The step of providing a first carrier having a first chip and a first metal pillar includes: providing the first chip; the method for fabricating the first chip includes: Wafers are mounted on the second carrier; A protective layer having the first groove is formed on the wafer; The wafer is cut to form the first chip.

6. The high-density bridging packaging method according to claim 5, characterized in that, After the step of forming a protective layer with the first groove on the wafer, the method further includes: The protective layer is formed within the first groove.

7. The high-density bridging packaging method according to claim 6, characterized in that, The step of forming the protective layer within the first groove includes: A protective adhesive is formed on the protective layer; The protective adhesive is exposed and developed, retaining the protective adhesive in the first groove to form a first adhesive layer; the first adhesive layer serves as the protective layer.

8. The high-density bridging packaging method according to claim 5, characterized in that, The steps for mounting the wafer on the second carrier include: A second bonding adhesive layer and an adhesive layer are sequentially formed on the second carrier; In the step of dicing the wafer, the wafer is diced from the side away from the second carrier to the bonding adhesive layer, such that the first chip includes the adhesive layer.

9. The high-density bridging packaging method according to claim 1, characterized in that, In the step of forming a protective layer in the first groove, the end of the protective layer away from the first pad is either planar or convex.

10. The high-density bridging packaging method according to claim 1, characterized in that, The step of providing a first carrier having a first chip and a first metal pillar includes: Provide a first vehicle having a first metal pillar; The first chip is attached to the first vehicle; The step of forming a protective layer in the first groove is completed before or after the step of mounting the first chip.

11. The high-density bridging packaging method according to claim 1, characterized in that, The step of removing the protective layer to form a second groove on the first molding compound that exposes the first pad includes: A third groove is formed on the first molding compound by laser grooving, exposure development, or etching to expose the protective layer; the second groove is formed after the protective layer is removed. Alternatively, the first molding compound can be thinned to expose the protective layer; the second groove can be formed after the protective layer is removed.

12. The high-density bridging packaging method according to claim 11, characterized in that, In the step of forming a third groove on the first molding body by laser grooving, exposure development, or etching to expose the protective layer; and in the step of forming the second groove after removing the protective layer: The protective layer is removed using an adhesive remover.

13. The high-density bridging packaging method according to claim 11, characterized in that, In the steps of thinning the first molding compound to expose the protective layer; and removing the protective layer to form the second groove: The protective layer includes a second adhesive layer and a dummy block that are sequentially covered on the first pad; The first chip and the protective layer are immersed in a chemical agent at a preset temperature to separate the dummy block and the second adhesive layer; the density of the dummy block is less than the density of the chemical agent, and the dummy block floats on the surface of the chemical agent; The second adhesive layer is removed by ultrasonic cleaning in the chemical agent, forming a second groove that exposes the first pad.

14. The high-density bridging packaging method according to claim 13, characterized in that, The preset temperature is 80 to 150 degrees Celsius, at which the second adhesive layer loses its stickiness.

15. A packaging structure, characterized in that, The package structure is manufactured using the high-density bridging packaging method as described in any one of claims 1 to 14, and the package structure includes: A substrate, wherein a first metal pillar is provided through the substrate; a first wiring layer connected to the first metal pillar is provided on one side of the substrate, and a second wiring layer connected to the first metal pillar is provided on the other side; A first chip is embedded in the substrate; the first chip has a first pad; a first conductive post is connected to the first pad; the first conductive post is electrically connected to the first wiring layer. A second conductive post is provided on the side of the first pad away from the first wiring layer; the second conductive post and the second wiring layer are electrically connected.

16. The packaging structure according to claim 15, characterized in that, The first chip has a protective layer on one side where the first pad is located, and the protective layer has a first groove that exposes the first pad; the first conductive post is located in the first groove and is electrically connected to the first pad.

17. The packaging structure according to claim 15, characterized in that, The first chip has an active wiring layer; the two ends of the active wiring layer are electrically connected to the first pad and the first conductive post, respectively.

18. The packaging structure according to claim 15, characterized in that, A second pad is provided between the first conductive post and the first wiring layer; and / or, a second pad is provided between the second conductive post and the second wiring layer.

19. The packaging structure according to claim 15, characterized in that, At least one end of the first metal pillar is provided with a third pad, which is electrically connected to the first wiring layer or the second wiring layer.

20. The packaging structure according to claim 15, characterized in that, It also includes a second chip and a second molding compound; The second chip is disposed on one side of the first wiring layer and electrically connected to the first wiring layer, and / or the second chip is disposed on one side of the second wiring layer and electrically connected to the second wiring layer; The second molding compound encapsulates the second chip.

21. The packaging structure according to claim 20, characterized in that, The substrate is a first molding compound, the thickness of which is less than the thickness of the second molding compound.

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