Deposition member and deposition apparatus

Abstract

The application provides a deposition device and a deposition component, the deposition component comprising a deposition ring, a center node and a plurality of support rods; the center node is arranged at the center of the deposition ring; the first end of the support rod is connected with the center node, the second end of the support rod is connected with the deposition ring, and the support rod has torsion around its own axis; the plurality of support rods are arranged radially around the center node to divide the area between the deposition ring and the center node into a plurality of deposition areas. In this way, by configuring the support rod to have torsion around its own axis, the projection area or projection angle of the support rod at different positions relative to the target material direction is changed, thereby adjusting the projection of the support rod on the wafer, improving the pattern trend of the thin film resistance, and at the same time adjusting the thin film thickness at different positions to improve the local uniformity.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor equipment, in particular to a deposition member and a deposition device. BACKGROUND

[0002] In the prior art, when a thick aluminum film (for example, the thickness of the aluminum film is greater than 10KÅ) is deposited by using a physical vapor deposition device or the like, a phenomenon that the thickness of the film in the middle is greater than the thickness of the film at the edge often occurs, and this phenomenon becomes more and more obvious as the thickness of the film increases. In order to improve the uniformity of the thick film deposition, a deposition member is arranged above a semiconductor substrate, and the deposition member is used to shield and guide sputtering particles, so that the phenomenon of non-uniform film thickness can be improved.

[0003] However, the existing deposition member is often of a regular shape, and the deposited film has a high similarity to the shape of the deposition member. Although the overall uniformity of the film is improved, there is a clear pattern trend when measuring the film resistance, and the local uniformity is poor. SUMMARY

[0004] The present application aims to provide a deposition member and a deposition device to solve the problem of poor local uniformity of film deposition.

[0005] To solve the above technical problems, the present application provides a deposition member, which comprises a deposition ring, a center node and a plurality of support rods.

[0006] The center node is arranged at the center position of the deposition ring; the first end of the support rod is connected with the center node, the second end of the support rod is connected with the deposition ring, and the support rod has a torsion around its own axis.

[0007] The plurality of support rods are arranged radially around the center node to divide the area between the deposition ring and the center node into a plurality of deposition areas.

[0008] Optionally, the cross section of the support rod at any position has a main inertia axis passing through the centroid of the cross section; wherein the included angle between the main inertia axis corresponding to the minimum moment of inertia and the axis of the deposition ring is the torsion angle of the support rod at the position.

[0009] The torsion angle of the support rod changes nonlinearly from the first end to the second end.

[0010] Optionally, the torsion angle of the support rod changes from large to small or from small to large from the first end to the second end.

[0011] Optionally, the size of the cross section of the support rod in the direction of the main inertia axis corresponding to the minimum moment of inertia changes from the first end to the second end.

[0012] Optionally, the cross-sectional shape of the support rod first increases and then decreases from the first end to the second end, or first decreases and then increases.

[0013] Optionally, the cross-section of any position on the support rod is a central symmetric cross-section, the central symmetric cross-section has a long axis and a short axis passing through the center of the cross-section, and the cross-section is arc-shaped at one end of the target material along the long axis.

[0014] Optionally, a plurality of the support rods are uniformly arranged in a circumferential direction around the central node, so that the divided plurality of the deposition areas correspond to the same area.

[0015] Optionally, the central node is a cylindrical body, one end of a plurality of the support rods is connected to the peripheral wall of the cylindrical body, the outer diameter of the cylindrical body is 5mm-8mm, and the height of the cylindrical body is 5mm-10mm.

[0016] Optionally, the support rod is arc-shaped curved in the radial direction of the deposition ring, and the bending direction and the bending radius of a plurality of the support rods are consistent.

[0017] To solve the above technical problems, the present application also provides a deposition device, which comprises a bearing ring, a support column and a deposition part as described above; the inner wall of the bearing ring is provided with a radially extending boss, the support column is arranged between the deposition ring and the boss, so that the deposition ring is carried on the boss through the support column, and a gap is maintained between the deposition ring and the boss.

[0018] Optionally, a plurality of first mounting holes are formed in the upper surface of the boss, a plurality of second mounting holes are formed in the lower surface of the deposition ring, the plurality of first mounting holes and the plurality of second mounting holes are arranged one-to-one, the top end and the bottom end of the support column are respectively accommodated in the first mounting hole and the second mounting hole arranged correspondingly; the top end of the support column is gap-fitted with the first mounting hole, and / or the bottom end of the support column is gap-fitted with the second mounting hole.

[0019] In summary, in the deposition part and the deposition device provided by the present application, the deposition part comprises a deposition ring, a central node and a plurality of support rods; the central node is arranged at the central position of the deposition ring; the first end of the support rod is connected with the central node, the second end of the support rod is connected with the deposition ring, and the support rod has a torsion around its axis; a plurality of the support rods are radially arranged around the central node to divide the area between the deposition ring and the central node into a plurality of deposition areas.

[0020] This configuration, by setting the support rod to twist around its own axis, changes the projected area or angle of the support rod relative to the target material at different positions, thereby adjusting the projection of the support rod on the wafer. This reduces the directionality and consistency of the shadow cast by the support rod on the wafer, thus breaking down concentrated, regular thickness variations into random, indistinguishable micro-variations. During the thin film deposition process, sputtered particles flying from different directions are blocked by the support rod at different angles and directions. Therefore, the shadow cast by the support rod on the wafer is no longer a clear area, but a "dispersed" and "blurred" area. The thickness change in this area is gradual and irregular, without clear boundaries. The change in film thickness changes from a steep abrupt change to a gentle gradient, thereby eliminating the regular and easily identifiable thin film resistance (RS) pattern. Furthermore, by configuring the support rod to twist around its own axis, the surface of the support rod does not have a fixed, continuous area that always faces the target material. Sputtered particles will be deposited on various surfaces of the support rod in different orientations, resulting in a more uniform film distribution. This avoids stress concentration in a specific direction, and even if peeling occurs, it will be in a small, dispersed form, greatly reducing the risk of generating large particles and thus avoiding wafer contamination by large particles. Attached Figure Description

[0021] Those skilled in the art will understand that the accompanying drawings are provided to better understand the invention and do not constitute any limitation on the scope of the invention.

[0022] Figure 1 This is a top view of the deposition component according to an embodiment of the present invention.

[0023] Figure 2 This is a perspective view of the deposition component according to an embodiment of the present invention.

[0024] Figure 3 It is along Figure 1 A schematic diagram showing the cross-sectional changes of the support rod along the AA section direction.

[0025] Figure 4 This is a schematic diagram illustrating the shielding effect of the support rod on the target material when the torsion angle of the support rod is zero, according to an embodiment of the present invention.

[0026] Figure 5 This is a schematic diagram illustrating the shielding effect on the target material when the torsion angle of the support rod is acute, according to an embodiment of the present invention.

[0027] Figure 6 This is a partially enlarged schematic diagram of the central portion of the deposition component according to an embodiment of the present invention.

[0028] Figure 7 This is a schematic axial cross-sectional view of the deposition apparatus according to an embodiment of the present invention.

[0029] Figure 8is Figure 7 B part of the deposition apparatus shown in the enlarged schematic view.

[0030] Figure 9 is the assembly schematic diagram of the deposition apparatus of the embodiment of the present application.

[0031] In the drawings: 1-deposition ring; 11-stress groove; 13-second mounting hole; 2-center node; 3-supporting rod; 4-deposition area; 5-bearing ring; 51- boss; 52-first mounting hole; 53-gap; 54-annular storage groove; 6-supporting column; 7-target material; 8-wafer; 81-projection range; 91-adapter; 92-bearing seat; 93-chamber; 94-wafer base. DETAILED DESCRIPTION

[0032] In order to make the purpose, advantages and characteristics of the present application more clear, the present application is further described in detail below in combination with the drawings and specific embodiments. It should be noted that the drawings are all very simplified and not drawn in proportion, and are only used to facilitate and clearly assist the purpose of describing the embodiments of the present application. In addition, the structures shown in the drawings are often part of the actual structures. In particular, the emphasis shown in each drawing is different, and sometimes different proportions are used.

[0033] As used in the present disclosure, the singular forms "a," "an," and "the" include plural referents unless the context clearly dictates otherwise. The term "or" is generally employed in its sense including "and / or" unless the context clearly dictates otherwise. The term "plurality" is generally employed in its sense including "two or more" unless the context clearly dictates otherwise. The terms "first," "second," "third," etc. are used only to describe different instances and do not imply relative importance or an actual number of the technical features indicated. Thus, features defined with "first," "second," "third" can explicitly or implicitly include one or at least two of the features. The terms "one end" and "the other end" and "proximal" and "distal" generally refer to two parts corresponding to each other, which include not only the end points. In addition, as used in the present disclosure, "mounting", "connecting", "connecting", "one element" "provided" in another element should be broadly understood, and generally only indicates that there is a connection, coupling, cooperation or transmission relationship between the two elements, and the two elements can be directly or indirectly connected, coupled, cooperated or transmitted through intermediate elements, and cannot be understood as indicating or implying the spatial positional relationship between the two elements, i.e. one element can be in any orientation inside, outside, above, below or one side of another element, unless the context clearly indicates otherwise. For those skilled in the art, the specific meaning of the above terms in the present disclosure can be understood according to the specific circumstances. In addition, directional terms such as above, below, up, down, upward, downward, left, right, etc. are used with respect to the exemplary embodiments as they are shown in the drawings, upward or upward direction is toward the top of the corresponding drawing, and downward or downward direction is toward the bottom of the corresponding drawing.

[0034] The present disclosure aims to provide a deposition member and a deposition apparatus to solve the problem of poor local uniformity of thin film deposition. For example, when depositing a thick aluminum thin film using a type of apparatus such as physical vapor deposition, sputtering particles fly to the wafer surface in a substantially straight path, and the deposition member can shield and guide the sputtering particles to improve the phenomenon of uneven thin film thickness. The following is described with reference to the accompanying drawings.

[0035] Referring to Figures 1 to 3 The present disclosure provides a deposition member, which includes a deposition ring 1, a center node 2, and a plurality of support rods 3; the center node 2 is arranged at the center position of the deposition ring 1; the first end of the support rod 3 is connected with the center node 2, and the second end of the support rod 3 is connected with the deposition ring 1, and the support rod 3 has a torsion around its own axis; a plurality of the support rods 3 are arranged radially around the center node 2 to divide the area between the deposition ring 1 and the center node 2 into a plurality of deposition areas 4.

[0036] In Figure 1 and Figure 2In the shown example, the number of support rods 3 and deposition areas 4 is 6. The number of support rods 3 and deposition areas 4 can be configured differently according to the actual needs, and the present application is not limited thereto.

[0037] For example, the deposition device includes a deposition ring 1 and a center node 2 arranged coaxially, the deposition ring 1 is in a ring structure, and the center part can be in a ring structure or a solid disc shape. The center node 2 is connected to the deposition ring 1 by a plurality of support rods 3, and the plurality of support rods 3 are arranged radially around the center node 2 to divide the area between the deposition ring 1 and the center node 2 into a plurality of deposition areas 4. Each support rod 3 can be fixedly connected or detachably connected to the corresponding structure. When the detachable connection is adopted, the connection position of the support rod 3 can be adjusted as needed, and the area of the different deposition areas 4 can be adjusted.

[0038] When the deposition device is applied to a thin film deposition equipment, the center node 2 is usually arranged horizontally coaxially with the center of the deposition cavity. The center node 2 and the deposition ring 1 of the deposition device can play a shielding role to reduce the deposition of sputtering particles in the area below these structures. The plurality of deposition areas 4 divided by the plurality of support rods 3 are not shielded, and the shielding and guiding of each support rod 3 can improve the phenomenon of uneven film thickness. For example, the sputtering particles are most concentrated in the center area of the chamber, and a large number of particles will bombard the center of the wafer, causing the center area to deposit too fast and the film to be too thick. The surface area of the center node 2 can be set as needed to reduce the deposition of the film in the center of the wafer, thereby avoiding the problem of too fast deposition and too thick film in the center of the wafer. For another example, in the deposition chamber, when the sputtering particles hit the surface of the support rod 3, part of the particles are adsorbed by the surface of the support rod 3 to form a film on the surface of the support rod 3, and the other part is reflected by the surface of the support rod 3 to fly to the area that cannot be directly reached or is difficult to be directly reached by changing the flight direction. In this way, the shielding and guiding of the sputtering particles are realized, and the phenomenon of uneven film thickness is finally improved.

[0039] The inventor found that when the plurality of support rods 3 of the deposition device are in a regular shape, for example, in a straight rod shape extending along the radial direction of the deposition ring, the cross-sectional shape and the spatial orientation are consistent. When the sputtering particles fly to the wafer surface in a substantially straight path, the support rod 3 will cast a shadow area on the wafer like an obstacle, and the film deposition rate of this shadow area will be significantly lower than that of the surrounding area. During the entire process, the support rod 3 casts a shadow defect on the wafer, which is completely the same in shape and size. When the support rods 3 are symmetrically distributed, these shadow defects will also be distributed radially symmetrically on the wafer. When the entire wafer is scanned on the film thickness measuring instrument, the instrument will clearly capture the symmetrically recessed points in thickness and connect them into a regular pattern corresponding to the number and position of the support rods 3, that is, a film resistance (RS) pattern similar to the shape of the deposition device.

[0040] Please combine Figure 4 and Figure 5 , the embodiment of the present application changes the projection area or projection angle of the support rod 3 at different positions relative to the target material direction by configuring the support rod 3 to twist around its own axis, thereby adjusting the projection of the support rod 3 on the wafer, reducing the directionality and consistency of the shadow cast by the support rod 3 on the wafer, and thereby dispersing the concentrated, regular thickness variation into random, barely distinguishable small variations. During thin film deposition, the sputtered particles flying from different directions have different angles and directions of being blocked by the support rod 3, so the shadow cast by the support rod 3 on the wafer is no longer a clear area, but a "dispersed" and "blurred" area, the thickness variation of which is gradual and irregular, without clear boundaries, and the thin film resistance (RS) pattern changes from sharp mutation to gentle transition, thereby eliminating regular and easily identifiable thin film resistance (RS) patterns.

[0041] In addition, when the plurality of support rods 3 of the deposition device are regular shapes, during thin film deposition, the sputtered particles deposited on the support rod 3 will also increase over time, thereby causing stress accumulation in the film layer on the support rod 3, causing the film layer to peel off from the support rod 3, resulting in particle contamination, falling on the wafer and causing yield loss. The present application configures the support rod 3 to twist around its own axis, so that there is no fixed and continuous area on the surface of the support rod 3 that always faces the target material, and sputtered particles will be deposited on each surface of the support rod 3 in different orientations, making the film layer more evenly distributed, avoiding stress accumulation in a particular direction, even if peeling occurs, it is in the form of small and dispersed, greatly reducing the risk of large particles, thereby avoiding the situation of wafer contamination by large particles.

[0042] The deposition device of the present embodiment will be further described below in conjunction with the exemplary embodiment shown in Figure 3 For the sake of convenience and comparison of the twisting of the support rod 3, the twisting angle is defined here as a parameter of the twisting amount at different positions of the support rod 3. Specifically, the cross section of any position on the support rod 3 has a principal axis of inertia passing through its centroid, wherein the angle between the principal axis of inertia corresponding to the minimum moment of inertia and the axis A of the deposition ring 1 is the twisting angle of the support rod 3 at that position.

[0043] With Figure 3For example, it shows the cross sections of different positions of the support rod 3, including the cross section C1 at the first end, the cross section C2 at the second end, and the cross section C3 between the first end and the second end. Taking the cross section C2 at the second end as an example, it is in the shape of a racetrack, i.e. composed of two long sides and two end arcs. The skilled in the art can determine its centroid O and the principal inertia axis y and the principal inertia axis z passing through the centroid O based on the prior art, and the principal inertia axis y and the principal inertia axis z are perpendicular to each other. Further, since the shape of the cross section C2 is longer in the direction of the principal inertia axis y and shorter in the direction of the principal inertia axis z, the moment of inertia Iy of the cross section C2 corresponding to the principal inertia axis y is smaller than the moment of inertia Iz of the cross section C2 corresponding to the principal inertia axis z, so the principal inertia axis y is the principal inertia axis corresponding to the minimum moment of inertia, and the included angle β between the principal inertia axis y and the axis A of the deposition ring 1 is the torsion angle of the support rod 3 at the cross section C2 at the second end. Similarly, the torsion angle of the support rod 3 at the cross section C1 is α, and the torsion angle of the support rod 3 at the cross section C3 is γ.

[0044] Preferably, the cross section of the support rod 3 at any position is a centrally symmetric cross section, and the centrally symmetric cross section has a long axis and a short axis passing through the centroid thereof. For the racetrack-shaped cross section as shown in Figure 3 , the long axis is the principal inertia axis y and the short axis is the principal inertia axis z. It should be noted that Figure 3 the racetrack-shaped cross section shown is only an example of the cross section shape of the support rod 3 and is not a limitation on the cross section shape of the support rod 3. In other embodiments, the cross section shape of the support rod 3 can also be an elliptical shape, a rounded rectangular shape, a rectangular shape, and the like, or even an asymmetric regular or irregular shape.

[0045] The support rod 3 has torsion around its axis, which can be understood as the torsion angle of the support rod 3 at different cross sections changing. Please refer to Figure 4 and Figure 5It can be seen that due to the change of the torsion angle of the support rod 3 at different cross sections, the projection area and the projection angle of the support rod 3 relative to the target material 7 direction also change. During the thin film deposition process, the sputtering particles flying from different directions, the angle and direction of the support rod 3 shielding them are different, so that the projection range 81 of the sputtering particles on the wafer 8 through the shielding of the support rod 3 changes with the different torsion of the support rod 3, thereby eliminating the regular and easily identifiable film resistance (RS) pattern, while adjusting the film thickness at different positions and improving the local uniformity. It can be understood that as long as the support rod 3 has a torsion around its own axis, the above-mentioned effect can be achieved. That is, in some embodiments, the support rod 3 can include several torsion sections, and can also include several non-torsion sections at the same time. In other embodiments, the support rod 3 is continuously twisted from the first end to the second end, so that the support rod 3 has the above-mentioned improvement effect on the entire length. Optionally, the torsion angle of the support rod 3 changes non-linearly from the first end to the second end, so as to further improve the irregularity of the torsion of the support rod 3 and further improve the pattern trend of the film resistance. Preferably, the torsion angle of the support rod 3 from the first end to the second end first increases and then decreases, or first decreases and then increases.

[0046] In Figure 3 In the illustrated example, the torsion angle α of the support rod 3 at the first end is 50°, the torsion angle of the support rod 3 at the cross section C3 between the first end and the second end is 25°, and the torsion angle β of the support rod 3 at the second end is 30°. The torsion angle of the support rod 3 from the first end to the second end first decreases and then increases. It can be understood that the support rod 3 twists in one direction (for example, counterclockwise) from the first end to the second end, and then twists in the opposite direction (for example, clockwise) after reaching the minimum torsion angle position. This forms the non-linear change of the torsion angle of the support rod 3 from the first end to the second end as a whole.

[0047] It should be noted that the change of the torsion angle of the support rod 3 from the first end to the minimum torsion angle position can be linear or non-linear, and the change of the torsion angle from the minimum torsion angle position to the second end can be linear or non-linear. The torsion angle of the support rod 3 at the first end can be the same as or different from the torsion angle at the second end. Preferably, the minimum torsion angle position (or the maximum torsion angle position) of the support rod 3 is located at the midpoint between the first end and the second end.

[0048] In some embodiments, in addition to the torsion around its own axis, the cross section of the support rod 3 also has a change in the shape of the cross section. Preferably, at least the size of the cross section of the support rod 3 in the direction of the principal axis of inertia corresponding to the minimum moment of inertia changes from the first end to the second end. Continuing with the example of Figure 3The main inertia axis of the minimum inertia moment of the runway-shaped cross section of the embodiment shown is the main inertia axis y, i.e. the long axis. That is, the cross section of the support rod 3 changes at least in the long axis direction from the first end to the second end. Considering that the support rod 3 functions to shield and guide the sputtered particles sputtered from the target material, in combination with the torsion of the support rod 3 around the axis, the change of the cross section of the support rod 3 in the long axis direction is beneficial to improve the uniformity of the projection range of the target material on the wafer through the support rod 3, further improve the pattern trend of the thin film resistance, while ensuring a smaller shielding area, improving the deposition rate, and increasing the wafer processing capacity (WPH) per hour.

[0049] Optionally, the change of the cross section shape of the support rod 3 from the first end to the second end is preferably non-linear, for example, the cross section shape of the support rod 3 first increases and then decreases, or first decreases and then increases from the first end to the second end.

[0050] Preferably, the cross section of the support rod 3 along the long axis is arc-shaped towards one end of the target material 7, and preferably both ends are convex arc-shaped. Please refer to Figure 4 and Figure 5 It can be understood that when the torsion angle is small, the cross section of the support rod 3 mainly faces the target material 7 with one end of the long axis ( Figure 4 and Figure 5 the upper end in the example) of the long axis, and the end of the long axis is configured as an arc shape, which is beneficial to reduce the shielding area of the sputtered particles on one hand, and on the other hand, it is also beneficial to reduce the directional rebound of the sputtered particles after directly impacting the surface of the support rod 3, further improving the uniformity of the deposition.

[0051] Please refer to Figure 1 The plurality of support rods 3 are arranged circumferentially uniformly around the center node 2, so that the areas of the plurality of deposition areas 4 corresponding to the plurality of support rods 3 are the same. The circumferentially uniformly arranged support rods 3 can make the areas and shapes of the deposition areas 4 the same on the one hand, which is beneficial to improve the deposition uniformity. On the other hand, the deposition member will expand under the action of high temperature in the process, and the circumferentially uniformly arranged support rods 3 can change uniformly in the circumferential direction when heated, thereby avoiding irregular deformation of the center node 2, which is beneficial to reduce or avoid irregular structural changes of the entire deposition member, and ensures the stability and reliability of the thin film deposition.

[0052] Please refer to Figure 1, preferably, the support rods 3 are curved in an arc shape in the radial direction of the deposition ring 1 (i.e. the horizontal direction in which the deposition ring 1 lies), and the bending directions and bending radii of the plurality of support rods 3 are consistent. By configuring the support rods 3 to be curved in an arc shape, when the support rods 3 expand due to heat, they preferentially deform in the bending direction, i.e. the stress generated by the expansion of the support rods 3 is preferentially offset by the bending of the support rods 3 themselves, reducing or avoiding the application of stress to the central node 2, and reducing or avoiding the central node 2 from arching or collapsing in the height direction (perpendicular to the direction of the paper). Figure 1 Further, the bending directions and bending radii of the plurality of support rods 3 are consistent, so that the bending deformations generated by the support rods 3 due to heat are approximately the same, reducing or avoiding the central node 2 from being twisted or offset in an undesirable manner due to uneven stress, reducing or avoiding the overall deposition assembly from being deformed in an irregular manner, and ensuring the stability and reliability of the thin film deposition.

[0053] Please refer to Figure 6 , and refer to Figure 1 and Figure 2 Further, the end of the support rod 3 connected to the central node 2 is a stress action end, the bending center of the support rod 3 is located inside the tangent line T of the support rod 3 at the stress action end, and there is a gap between the tangent line T and the axis A of the central node 2.

[0054] It should be noted that the stress action end can be simplified as the connection point of the bending axis of the support rod 3 and the central node 2. In order to further reduce the axial stress generated by the support rod 3 on the central node 2 when it expands due to heat, it is preferable to offset the tangent line T of the stress action end of the support rod 3 from the axis A of the central node 2. In this way, when the support rod 3 expands due to heat, the stress it applies to the central node 2 does not pass through the axis A of the central node 2, i.e. does not pass through the center of the central node 2, but is eccentric, thereby converting part of the axial stress into a bending moment on the central node 2, reducing the direct axial thrust on the central node 2, avoiding the central node from arching or collapsing due to the axial stress of the support rod 3, and further avoiding the deposition assembly from being deformed in the height direction, reducing the possibility of it being scratched by the semiconductor substrate. For example, with reference to Figure 6For example, if the support rod 3 bends clockwise from the stress-bearing end toward the deposition ring 1, on the horizontal plane where the deposition ring 1 is located, the support rod 3 is positioned with the tangent T (and its extension) at the stress-bearing end on the inner side (i.e., the concave side of the bend) and the outer side (i.e., the convex side of the bend) of the tangent T on the stress-bearing end, respectively. The bending center of the support rod 3 is located on the inner side of the tangent T. As another example, if the support rod 3 bends counterclockwise from the stress-bearing end toward the deposition ring, on the horizontal plane where the deposition ring 1 is located, the support rod 3 is positioned with the tangent T (and its extension) at the stress-bearing end on the inner side (i.e., the concave side of the bend) and the outer side (i.e., the convex side of the bend) of the tangent T on the stress-bearing end, respectively. The bending center of the support rod 3 is still located on the inner side of the tangent T.

[0055] In one embodiment, the axis A of the central node 2 is located on the same side of the tangent T of the plurality of support rods 3 at the stress-affected end. That is, the axis A of the central node 2 is located inside or outside the tangent T of the plurality of support rods 3 at the stress-affected end.

[0056] For example, continue with Figure 6 Taking the example shown, for multiple support rods 3, with respect to the tangent T at their respective stress-bearing ends, the axis A of the central node 2 is located outside them. Thus, when the multiple support rods 3 undergo stress deformation due to heat, they simultaneously apply a clockwise bending moment to the central node 2. Furthermore, since the bending direction and curvature of the multiple support rods 3 are consistent, the magnitudes of the bending moments applied by the multiple support rods 3 are approximately the same. The resultant bending moments formed at the central node 2 cancel each other out in magnitude. Ultimately, when the support rods 3 expand due to heat, the central node 2 tends to rotate clockwise around axis A, or undergoes a slight rotation, thus dissipating some of the stress caused by the deformation of the support rods 3. This reduces or avoids arching or collapsing of the central node 2 along axis A (i.e., the height direction). Simultaneously, since the central node 2 only tends to rotate or undergoes a slight rotation around axis A, it will not shift horizontally or twist vertically, resulting in regular and controllable deformation of the entire deposition piece. It is easy to understand that when the axis A of the central node 2 is located inside the corresponding tangent T of the multiple support rods 3, when the multiple support rods 3 are heated and undergo stress deformation, the multiple support rods 3 simultaneously apply a counterclockwise bending moment to the central node 2, the effect of which is the same as... Figure 6 The examples shown are similar, so they will not be repeated here.

[0057] In an exemplary embodiment, the center node is a cylinder, one end of the plurality of support rods is connected to the peripheral wall of the cylinder, the outer diameter of the cylinder is 5mm-8mm, and the height of the cylinder is 5mm-10mm. The center node 2 of the cylinder does not change much in the axial projection even if it rotates around the axis A, which is conducive to reducing the deformation of the deposition device caused by heat, thereby improving the uniformity of deposition.

[0058] Optionally, the deposition ring 1 is provided with a stress groove 11, the stress groove 11 is provided through the deposition ring 1 in the axial direction of the deposition ring 1, and the position of the stress groove 11 corresponds to the second end of the support rod 3. It is easy to understand that the support rod 3 will exert stress on one end of the deposition ring 1 when it expands due to heat. The stress groove 11 can significantly eliminate the stress exerted by the support rod 3 on the deposition ring 1 through deformation, thereby reducing the deformation of the entire deposition device.

[0059] Please refer to Figures 7 to 9 Based on the deposition device as described above, the present application further provides a deposition device, which comprises a bearing ring 5, a support column 6, and a deposition device 1 as described above; the inner wall of the bearing ring 5 is provided with a radially extending boss 51, the support column 6 is arranged between the deposition ring 1 and the boss 51, so that the deposition ring 1 is carried on the boss 51 through the support column 6, and a gap is maintained between the deposition ring 1 and the boss 51. Further, the deposition device further comprises an adapter 91, a bearing seat 92, a chamber 93, and a wafer base 94, the adapter 91 is connected to the chamber 93, used to support the bearing ring 5 and the bearing seat 92, and the wafer base 94 passes through the chamber 93 and the bearing seat 92, used to carry the wafer 8.

[0060] Since the expansion of the deposition device caused by heat is mainly in the radial direction of the deposition ring 1, the deformation in the axial direction of the deposition ring 1 can be ignored. Therefore, by supporting the deposition ring 1 through the support column 6, a controllable and stable gap can be formed between the deposition ring 1 and the boss 51, so that the entire deposition device can always remain stable in the height direction. It is easy to understand that by replacing the support column 6 with different lengths, the gap between the deposition ring 1 and the boss 51 can be changed to meet different needs. Optionally, the material of the support column 6 is ceramic material.

[0061] In an alternative exemplary embodiment, the upper surface of the boss 51 is provided with a plurality of first mounting holes 52, the lower surface of the deposition ring 1 is provided with a plurality of second mounting holes 13, the plurality of first mounting holes 52 and the plurality of second mounting holes 13 are arranged one by one, and the bottom end and the top end of the support column 6 are respectively accommodated in the corresponding first mounting hole 52 and second mounting hole 13.

[0062] In some embodiments, the bottom end of the support column 6 is clearance fitted with the first mounting hole 52. In some embodiments, the top end of the support column 6 is clearance fitted with the second mounting hole 13. In some embodiments, the bottom end and the top end of the support column 6 can be clearance fitted with the first mounting hole 52 and the second mounting hole 13, respectively. As used herein, the bottom end and the top end of the support column 6 are understood to be the two ends of the support column 6 along its own axial direction, which is preferably parallel to the axis of the deposition ring 1 and perpendicular to the upper surface of the boss 51.

[0063] In other embodiments, only one end of the support column 6 is clearance fitted with the corresponding mounting hole, and the other end is movably fitted with the corresponding mounting hole. Please refer to Figure 8 In one exemplary embodiment, the top end of the support column 6 is clearance fitted with the second mounting hole 13, while the bottom end of the support column 6 is movably fitted with the first mounting hole 52, i.e. the bottom end of the support column 6 can have a certain degree of freedom in the first mounting hole 52. Correspondingly, the cross section of the first mounting hole 52 (i.e. the cross section perpendicular to the axial direction of the first mounting hole 52) can be configured in the shape of a long strip with a certain length in the radial direction of the deposition ring 1. In this way, even if the deposition ring 1 expands due to heat during the process, it can move the support column 6 in the first mounting hole 52, thereby releasing the corresponding stress between the deposition ring 1 and the boss 51. It can be understood that Figure 7 The exemplary embodiment in which only the bottom end of the support column 6 is movably fitted with the first mounting hole 52 is not limiting. In other embodiments, the top end of the support column 6 can be movably fitted with the second mounting hole 13, which is not limited by the present embodiment.

[0064] Further, the inner wall of the carrier ring 5 has a gap 53 with the outer wall of the deposition ring 1, and the inner wall of the carrier ring 5 is provided with an annular storage groove 54 corresponding to the position of the deposition ring 1. It can be easily understood that the existence of the gap 53 allows the deposition ring 1 to expand radially to a certain extent without being squeezed by the inner wall of the carrier ring 5. The annular storage groove 54 is used to store the target material (such as aluminum) deposited in the gap 53 during the process.

[0065] In summary, in the deposition device and the deposition ring provided by the application, the deposition ring comprises a deposition ring, a center node and a plurality of support rods; the center node is arranged at the center of the deposition ring; the first end of the support rod is connected with the center node, and the second end of the support rod is connected with the deposition ring; the support rod has torsion around its own axis; the plurality of support rods are arranged radially around the center node to divide the area between the deposition ring and the center node into a plurality of deposition areas. In this way, by configuring the support rod to have torsion around its own axis, the projection area or the projection angle of the support rod at different positions relative to the target material is changed, so as to adjust the projection of the support rod on the wafer, reduce the directionality and consistency of the shadow projected by the support rod on the wafer, and thus disperse the concentrated and regular thickness variation into random and indistinguishable small variations. In the process of thin film deposition, the sputtering particles flying from different directions have different angles and directions of being shielded by the support rod, so that the shadow projected by the support rod on the wafer is no longer a clear area, but a "dispersed" and "blurred" area, the thickness variation of the area is gradual and irregular, and there is no clear boundary, and the change of the film thickness changes from abrupt change to gradual change, so as to eliminate the regular and easily identifiable film resistance (RS) pattern. In addition, by configuring the support rod to have torsion around its own axis, there is no fixed and continuous area on the surface of the support rod that always faces the target material, and the sputtering particles will be deposited on each surface of the support rod with different orientations, so that the film layer is distributed more uniformly, and the stress is avoided to be accumulated in a certain direction, even if peeling occurs, it is also in the form of small and dispersed particles, greatly reducing the risk of large particles, thereby avoiding the situation that the wafer is contaminated by large particles.

[0066] It should be noted that the above several embodiments can be combined with each other. The above description is only a description of the preferred embodiments of the application, and does not limit the scope of the application in any way. Any modification or modification of the above-mentioned disclosure by a person skilled in the art falls within the protection scope of the application.

Claims

1. A deposition component, characterized in that, The deposition device comprises a deposition ring, a center node and a plurality of support rods. The center node is arranged at the center of the deposition ring, the first end of the support rod is connected with the center node, the second end of the support rod is connected with the deposition ring, and the support rod has a torsion around its own axis. The plurality of support rods are arranged radially around the center node to divide the area between the deposition ring and the center node into a plurality of deposition areas. The cross section of the support rod at any position has a main inertia axis passing through its own centroid, and the angle between the main inertia axis corresponding to the minimum inertia moment and the axis of the deposition ring is the torsion angle of the support rod at the position. The torsion angle of the support rod changes non-linearly from the first end to the second end. The torsion angle of the support rod changes from large to small or from small to large from the first end to the second end.

2. The depositing member of claim 1, wherein, The size of the cross section of the support rod in the direction of the main inertia axis corresponding to the minimum inertia moment changes from the first end to the second end.

3. The depositing member of claim 1, wherein, The cross section shape of the support rod changes from large to small or from small to large from the first end to the second end.

4. The depositing member of claim 3, wherein, The cross section at any position of the support rod is a center-symmetric cross section having a long axis and a short axis passing through its own centroid, and the end of the cross section along the long axis towards the target material is arc-shaped.

5. The depositing member of claim 1, wherein, The plurality of support rods are arranged uniformly in the circumferential direction around the center node so that the divided plurality of deposition areas correspond to the same area.

6. The deposition member according to any one of claims 1 to 5, wherein The center node is a cylindrical body, one end of the plurality of support rods is connected around the peripheral wall of the cylindrical body, the outer diameter of the cylindrical body is 5-8 mm, and the height of the cylindrical body is 5-10 mm.

7. The depositing member of claim 6, wherein, The support rod is arc-shaped in the radial direction of the deposition ring, and the bending direction and bending radius of the plurality of support rods are consistent.

8. The deposition member according to any one of claims 1 to 5, wherein The deposition device comprises a bearing ring, a support column and the deposition device of any one of claims 1-8, the inner wall of the bearing ring is provided with a radially extending boss, the support column is arranged between the deposition ring and the boss, so that the deposition ring is carried on the boss through the support column, and a gap is maintained between the deposition ring and the boss.

9. A deposition apparatus, characterized by, The upper surface of the boss is provided with a plurality of first mounting holes, the lower surface of the deposition ring is provided with a plurality of second mounting holes, the plurality of first mounting holes and the plurality of second mounting holes are arranged one by one, the top end and the bottom end of the support column are respectively accommodated in the corresponding first mounting hole and the second mounting hole, the top end of the support column is gap-fitted with the first mounting hole, and / or the bottom end of the support column is gap-fitted with the second mounting hole.

10. The deposition apparatus of claim 9, wherein ​

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