Process cavity top cover and thin film deposition equipment

Abstract

The invention provides a process cavity top cover and thin film deposition equipment. The process cavity top cover comprises a top cover body, the top cover body comprises a plurality of air inlets longitudinally penetrating through the upper surface and the lower surface of the top cover body, the lower surface of the top cover body is provided with an upwards-sunken air mixing cavity, and the air inlets are connected with various different air sources; the rotating disc seals the lower surface of the gas mixing cavity and is provided with at least one gas outlet longitudinally penetrating through the upper surface and the lower surface of the rotating disc; and the driving mechanism is used for driving the turntable to rotate so as to adjust the distance from the air outlet to each air inlet.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor manufacturing, and in particular to a process cavity top cover and a thin film deposition device. BACKGROUND

[0002] In the field of high-precision manufacturing such as thin film deposition and coating preparation, the gas mixing chamber is a core component for realizing uniform mixing of reaction gases, and the structure design of the gas guide pipe inside the gas mixing chamber directly affects the gas mixing effect and the quality of the final thin film product. At present, the gas guide pipe of the gas mixing chamber in the industry is mostly fixed and installed in an integrated manner, that is, the gas guide pipe is rigidly connected with the chamber body through welding, bolt locking or other methods, and the position of the gas guide pipe is fixed after the production and assembly are completed. This type of structure is widely used in low-precision thin film production scenarios due to its simple assembly process and low manufacturing cost.

[0003] However, as the downstream industry continues to improve the precision requirements of thin films, the distance between the gas outlet of the gas guide pipe and the multiple gas inlets in the gas mixing chamber remains fixed due to the inability to adjust the position of the gas guide pipe, which prevents dynamic mixing and adjustment of the reaction gases in different areas according to actual needs. When the gas flows in the chamber, the gas concentration near the gas inlet area is too high, and the gas concentration away from the gas inlet area is too low, which directly causes poor gas mixing uniformity. Inadequate gas mixing uniformity further leads to significant differences in film thickness between the edge and the center during the thin film deposition process, which cannot meet the requirements of high-precision thin films for film thickness consistency.

[0004] In order to overcome the above-mentioned defects existing in the prior art, there is an urgent need in the field for a process cavity top cover technology for adjusting the distance from each gas outlet to multiple gas inlets to dynamically optimize the flow path and mixing time of the gas in the chamber, thereby effectively improving the gas mixing uniformity. SUMMARY

[0005] The following presents a simplified summary of one or more aspects in order to provide a basic understanding of such aspects. This summary is not an extensive overview of all contemplated aspects, and is intended to neither identify key or critical elements of all aspects nor delineate the scope of any or all aspects. Its sole purpose is to present some concepts of one or more aspects in a simplified form as a prelude to the more detailed description that is presented later.

[0006] In order to overcome the above-mentioned defects existing in the prior art, the present application provides a process cavity top cover and a thin film deposition device for adjusting the distance from each gas outlet to multiple gas inlets to dynamically optimize the flow path and mixing time of the gas in the chamber, thereby effectively improving the gas mixing uniformity.

[0007] Specifically, the process chamber top cover according to the first aspect of the present application comprises: a top cover body, comprising a plurality of gas inlets longitudinally penetrating through the upper surface and the lower surface thereof, wherein the lower surface of the top cover body is provided with a gas mixing cavity concaved upward, and the plurality of gas inlets are connected to a plurality of different gas sources; a rotating disc, enclosing the lower surface of the gas mixing cavity and provided with at least one gas outlet longitudinally penetrating through the upper surface and the lower surface thereof; and a driving mechanism, used to drive the rotating disc to rotate, so as to adjust the distance between the gas outlet and each of the gas inlets.

[0008] Further, in some embodiments of the present application, the driving mechanism drives the rotating disc to rotate multiple times during the process, so as to change the distance between the gas outlet and each of the gas inlets multiple times during the process.

[0009] Further, in some embodiments of the present application, the driving mechanism continuously drives the rotating disc to rotate during the process, so as to continuously change the distance between the gas outlet and each of the gas inlets, or the driving mechanism stepwise drives the rotating disc to rotate during the process, so as to stepwise change the distance between the gas outlet and each of the gas inlets.

[0010] Further, in some embodiments of the present application, the central region of the rotating disc is provided with at least one first gas outlet, and the edge region of the rotating disc is provided with at least one second gas outlet, the driving mechanism drives the rotating disc to rotate, so as to make the at least one first gas outlet close to the plurality of gas inlets, thereby improving the film deposition rate of the central region of the wafer below the process chamber top cover, and the driving mechanism drives the rotating disc to rotate, so as to make the at least one second gas outlet close to the plurality of gas inlets, thereby improving the film deposition rate of the edge region of the wafer below the process chamber top cover.

[0011] Further, in some embodiments of the present application, the line connecting the at least one first gas outlet to the center of the rotating disc is perpendicular to the line connecting the at least one second gas outlet to the center of the rotating disc, wherein the driving mechanism drives the at least one first gas outlet to close to the plurality of gas inlets while driving the at least one second gas outlet to move away from the plurality of gas inlets, or the driving mechanism drives the at least one second gas outlet to close to the plurality of gas inlets while driving the at least one first gas outlet to move away from the plurality of gas inlets.

[0012] Further, in some embodiments of the present application, the plurality of gas inlets are arranged in a central symmetry along the center of the rotating disc, the central region of the rotating disc is provided with a plurality of first circular arc grooves for aligning the corresponding gas inlets during rotation, the edge region of the rotating disc is provided with a plurality of second circular arc grooves for surrounding the corresponding first circular arc grooves, each of the first circular arc grooves is provided with a first gas guide pipe, each of the first gas outlets is arranged at the first end of the corresponding first gas guide pipe, each of the second circular arc grooves is provided with a second gas guide pipe, and each of the second gas outlets is arranged at the second end of the corresponding second gas guide pipe.

[0013] Further, in some embodiments of the present application, the central region of the rotating disc is rotationally connected to the edge region thereof, and the process chamber top cover comprises a plurality of driving mechanisms, wherein a first driving mechanism is connected to the central region for driving the central region to rotate independently so as to bring the at least one first gas outlet close to the plurality of gas inlets to improve the film deposition rate of the central region, and a second driving mechanism is connected to the edge region for driving the edge region to rotate independently so as to bring the at least one second gas outlet close to the plurality of gas inlets to improve the film deposition rate of the edge region.

[0014] Further, in some embodiments of the present application, in response to a first instruction for improving the film deposition rate of the central region, the driving mechanisms drive the rotating disc to reciprocate within a preset first angle range during the process so as to make the distance from the at least one first gas outlet to the plurality of gas inlets smaller than the distance from the at least one second gas outlet to the plurality of gas inlets, and in response to a second instruction for improving the film deposition rate of the central region, the driving mechanisms drive the rotating disc to reciprocate within a preset second angle range during the process so as to make the distance from the at least one first gas outlet to the plurality of gas inlets larger than the distance from the at least one second gas outlet to the plurality of gas inlets.

[0015] Further, in some embodiments of the present application, the driving mechanisms comprise a motor, a transmission shaft and a transmission gear, and the edge of the rotating disc is provided with a gear structure, wherein the motor is arranged above the top cover body, the first end of the transmission shaft is connected to the motor, and the second end of the transmission shaft penetrates downward through the top cover body to enter the gas mixing chamber, and the transmission gear is installed on the second end of the transmission shaft and driven by the transmission shaft to rotate the gear structure of the edge of the rotating disc.

[0016] In addition, the film deposition apparatus according to the second aspect of the present application comprises: a process chamber comprising the process chamber top cover according to any one of the first aspect of the present application; and a plurality of gas sources for providing a plurality of different gases required by a film deposition process to the plurality of gas inlets of the process chamber top cover. BRIEF DESCRIPTION OF DRAWINGS

[0017] The above-described features and advantages of the present invention will be better understood after reading the following detailed description of embodiments of the present disclosure in conjunction with the accompanying drawings. In the drawings, components are not necessarily drawn to scale, and components having similar related characteristics or features may have the same or similar reference numerals.

[0018] Figure 1 A schematic diagram of the structure of a process chamber top cover provided according to some embodiments of the present invention is shown.

[0019] Figure 2A A schematic diagram of the structure of a turntable provided according to some embodiments of the present invention is shown.

[0020] Figure 2B A perspective structural schematic diagram of a turntable provided according to some embodiments of the present invention is shown.

[0021] Figure 3 An exploded structural diagram of a turntable provided according to some embodiments of the present invention is shown.

[0022] Figure label:

[0023] 10. Top cover body

[0024] 11 Air Inlet

[0025] 12 Mixing chamber

[0026] 20 turntables

[0027] 21 First air outlet

[0028] 22 Second air outlet

[0029] 31 First circular groove

[0030] 32 Second circular groove

[0031] 41 First air duct

[0032] 42 Second air tube

[0033] 50 Transmission Gears Detailed Implementation

[0034] The advantages and effects of the present application can be easily understood by those skilled in the art from the disclosure of the specification. Although the description of the present application will be introduced in combination with the preferred embodiments, it does not mean that the features of the present application are limited to the embodiments. On the contrary, the purpose of introducing the application in combination with the embodiments is to cover other options or modifications that can be extended based on the claims of the present application. In order to provide a deep understanding of the present application, many specific details will be included in the following description. The present application can also be implemented without using these details. In addition, in order to avoid confusion or obscure the focus of the present application, some specific details will be omitted in the description.

[0035] In the description of the present application, it should be noted that unless otherwise explicitly specified and limited, the terms "mounting", "connecting", "connection" should be understood broadly, for example, it can be fixed connection, or detachable connection, or integrally connected; it can be mechanical connection, or electrical connection; it can be directly connected, or indirectly connected through intermediate medium, or internal communication of two elements. For those skilled in the art, the specific meaning of the above terms in the present application can be understood according to the specific circumstances.

[0036] In addition, "up", "down", "left", "right", "top", "bottom", "horizontal", "vertical" used in the following description should be understood as the orientation shown in the section and the related drawings. The relative terms are only for the convenience of description, and they do not mean that the devices described should be manufactured or operated in a particular orientation, so they should not be understood as a limitation on the present application.

[0037] It can be understood that although the terms "first", "second", "third" and the like can be used herein to describe various components, regions, layers and / or parts, these components, regions, layers and / or parts should not be limited by these terms, and these terms are only used to distinguish different components, regions, layers and / or parts. Therefore, the first component, region, layer and / or part discussed below can be referred to as the second component, region, layer and / or part without departing from some embodiments of the present application.

[0038] As described above, in the field of high-precision manufacturing such as thin film deposition, coating preparation, the gas mixing chamber is the core component to realize uniform mixing of reaction gas, and the structure design of the gas guide pipe inside the gas mixing chamber directly affects the gas mixing effect and the quality of the final thin film product. At present, the gas guide pipe of the gas mixing chamber in the industry is mostly fixed by an integrated structure, that is, the gas guide pipe and the chamber body are rigidly connected by welding, bolt locking and other methods. The position of the gas guide pipe is fixed after the production and assembly are completed. Such structure is widely used in medium and low precision thin film production scenes because of its simple assembly process and low manufacturing cost.

[0039] However, as the downstream industry continues to improve the precision requirements of the film, the distance between the gas outlet and the multiple gas inlets in the mixing chamber remains fixed due to the inability to adjust the position of the gas guide pipe, resulting in the inability to dynamically mix and adjust the reaction gas in different areas according to actual needs. When the gas flows in the chamber, the gas concentration near the gas inlet area is too high, and the gas concentration away from the gas inlet area is too low, directly causing poor mixing uniformity. Insufficient mixing uniformity will further cause obvious differences in film thickness between the edge and the center during the film deposition process, which cannot meet the requirements of high-precision films for film thickness consistency.

[0040] In order to overcome the above-mentioned defects of the prior art, the present application provides a process cavity top cover and a thin film deposition equipment for adjusting the distance from each gas outlet to the multiple gas inlets to dynamically optimize the flow path and mixing time of the gas in the chamber, thereby effectively improving the mixing uniformity.

[0041] In some non-limiting embodiments, the process cavity top cover provided by the first aspect of the present application can be configured in the thin film deposition equipment provided by the second aspect of the present application. Specifically, the thin film deposition equipment provided by the second aspect of the present application comprises a process cavity and multiple gas sources. The process cavity comprises a process cavity top cover. The multiple gas sources are used to provide multiple different gases required for a thin film deposition process to the multiple gas inlets of the process cavity top cover.

[0042] Specifically, please refer to Figure 1 , Figures 2A-2B , Figure 3 , Figure 1 Fig. 1 shows a structural schematic diagram of a process cavity top cover according to some embodiments of the present application. Figure 2A Fig. 2 shows a structural schematic diagram of a rotating disc according to some embodiments of the present application. Figure 2B Fig. 3 shows a perspective structural schematic diagram of a rotating disc according to some embodiments of the present application. Figure 3 Fig. 4 shows an exploded structural schematic diagram of a rotating disc according to some embodiments of the present application.

[0043] As shown in Figure 1 , Figures 2A-2B , Figure 3 , the process cavity top cover comprises a top cover body 10, a rotating disc 20 and a driving mechanism. The top cover body 10 comprises multiple gas inlets 11 longitudinally penetrating the upper surface and the lower surface thereof. The lower surface of the top cover body 10 is provided with a mixing chamber 12 concave upward, and the multiple gas inlets 11 are connected to multiple different gas sources. The rotating disc 20 closes the lower surface of the mixing chamber 12 and is provided with at least one gas outlet longitudinally penetrating the upper surface and the lower surface of the rotating disc 20. The driving mechanism is used to drive the rotating disc 20 to rotate to adjust the distance from the gas outlet to each gas inlet 11. Preferably, the driving mechanism can adopt a digital driving motor.

[0044] Thus, the present application provides a mixing chamber 12 above the process chamber, and adjusts the distance between the gas outlet and the plurality of gas inlets 11 by rotating the rotating disc 20, so as to adjust the uniformity of the mixed gas before the gas enters the process chamber, thereby improving the uniformity of the mixed gas in the whole process. Specifically, the driving mechanism receives a control signal and drives the rotating disc 20 to rotate, thereby changing the relative position between the gas outlet and the plurality of gas inlets 11 on the top cover body 10, and dynamically adjusting the straight-line distance between the gas outlet and each gas inlet 11. By adjusting the distance in this way, the mixing ratio and contact time of different gas sources in the mixing chamber 12 can be accurately controlled, the problem of excessive or insufficient concentration of local gas source can be avoided, the flow state and mixing process of the gas in the mixing chamber 12 can be effectively optimized, and thus the uniformity of the mixed gas can be effectively improved.

[0045] For example, when the concentration of a gas source corresponding to a gas inlet 11 needs to be increased, the driving mechanism can drive the rotating disc 20 to rotate, so that the gas outlet is closer to the gas inlet 11, the flow path of the gas from the gas inlet 11 to the gas outlet in the mixing chamber 12 is shortened, and the proportion of the gas source in the mixed gas is increased. Conversely, if the concentration of a gas source needs to be reduced, the rotating disc 20 can be rotated to move the gas outlet away from the corresponding gas inlet 11, thereby lengthening the flow path of the gas source and reducing its proportion in the mixed gas.

[0046] In some embodiments, the driving mechanism drives the rotating disc 20 to rotate multiple times during the process, so as to change the distance between the gas outlet and each gas inlet 11 multiple times during the process, thereby dynamically optimizing the flow path and mixing time of the gas in the chamber, and effectively improving the uniformity of the mixed gas.

[0047] Further, the driving mechanism continuously drives the rotating disc 20 to rotate during the process, so as to continuously change the distance between the gas outlet and each gas inlet 11, or the driving mechanism stepwise drives the rotating disc 20 to rotate during the process, so as to stepwise change the distance between the gas outlet and each gas inlet 11, thereby dynamically optimizing the flow path and mixing time of the gas in the chamber, and effectively improving the uniformity of the mixed gas.

[0048] In some embodiments, the central region of the rotating disc 20 is provided with at least one first gas outlet 21, and the edge region of the rotating disc 20 is provided with at least one second gas outlet 22. The driving mechanism drives the rotating disc 20 to rotate, so that the at least one first gas outlet 21 is closer to the plurality of gas inlets 11, thereby increasing the film deposition rate of the central region of the wafer below the process chamber top cover. The driving mechanism drives the rotating disc 20 to rotate, so that the at least one second gas outlet 22 is closer to the plurality of gas inlets 11, thereby increasing the film deposition rate of the edge region of the wafer below the process chamber top cover.

[0049] Furthermore, the line connecting at least one first air outlet 21 to the center of the turntable 20 is perpendicular to the line connecting at least one second air outlet 22 to the center of the turntable 20. The drive mechanism moves at least one first air outlet 21 closer to the plurality of air inlets 11 while simultaneously moving at least one second air outlet 22 away from the plurality of air inlets 11, or vice versa, thereby improving the sensitivity of distance adjustment. Here, "perpendicular" can be understood as approximately perpendicular, for example, 70° to 110°.

[0050] like Figure 3 As shown, multiple air inlets 11 can be symmetrically arranged around the center of the turntable 20. The central area of ​​the turntable 20 is provided with multiple first arc grooves 31 to align with the corresponding air inlets 11 during rotation. The edge area of ​​the turntable 20 is provided with multiple second arc grooves 32 to surround the corresponding first arc grooves 31. Each first arc groove 31 is provided with a first air guide pipe 41, and each first air outlet 21 is provided at the first end of the corresponding first air guide pipe 41. Each second arc groove 32 is provided with a second air guide pipe 42, and each second air outlet 22 is provided at the opposite second end of the corresponding second air guide pipe 42, thereby improving the accuracy and uniformity of distance adjustment.

[0051] Here, the first end can be the left end, and when the turntable 20 rotates to the left end, more reactive gas flows out through the inner first outlet 21. The second end can be the right end, and when the turntable 20 rotates to the right end, more reactive gas diffuses radially outward to flow out through the outer second outlet 22.

[0052] Those skilled in the art will understand that these embodiments of the turntable control method are merely some non-limiting implementations provided by the present invention, intended to clearly demonstrate the main concept of the present invention and provide some specific solutions that are easy for the public to implement, rather than intended to limit all functions or all working methods of the turntable.

[0053] Optionally, the central region of the turntable 20 is rotatably connected to its edge regions, and the top cover of the process chamber includes multiple drive mechanisms. A first drive mechanism is connected to the central region and is used to drive the central region to rotate independently, so that at least one first air outlet 21 is brought close to multiple air inlets 11, thereby improving the thin film deposition rate of the central region. A second drive mechanism is connected to the edge regions and is used to drive the edge regions to rotate independently, so that at least one second air outlet 22 is brought close to multiple air inlets 11, thereby improving the thin film deposition rate of the edge regions.

[0054] In some embodiments, in response to the first instruction for increasing the film deposition rate of the center region, the driving mechanism drives the rotating disc 20 to reciprocate within a preset first angle range during the process, so that the distance from the at least one first gas outlet 21 to the plurality of gas inlets 11 is less than the distance from the at least one second gas outlet 22 to the plurality of gas inlets 11. Correspondingly, in response to the first instruction for increasing the film deposition rate of the center region, the driving mechanism drives the rotating disc 20 to reciprocate within a preset second angle range during the process, so that the distance from the at least one first gas outlet 21 to the plurality of gas inlets 11 is greater than the distance from the at least one second gas outlet 22 to the plurality of gas inlets 11, thereby improving the accuracy and sensitivity of the rotating disc angle adjustment.

[0055] As shown in Figures 2A-2B and Figure 3 The driving mechanism includes a motor, a transmission shaft, and a transmission gear 50, and the edge of the rotating disc 20 is provided with a gear structure. Here, the number of teeth of the gear structure can be greater than the number of teeth of the transmission gear 50, and the control accuracy of the rotation angle can be improved by speed reduction transmission.

[0056] In some embodiments, the motor is arranged above the top cover body 10, the first end of the transmission shaft is connected to the motor, and the second end thereof passes downward through the top cover body 10 to enter the gas mixing chamber 12. The transmission gear 50 is installed on the second end of the transmission shaft, and is driven by the transmission shaft to rotate the gear structure of the edge of the rotating disc 20. Here, for the rotating disc 20 in which the center region is rotationally connected to the edge region, two sets of driving mechanisms can be configured to independently drive the center region and the edge region of the rotating disc 20 to rotate, respectively.

[0057] Here, by preparing a variable speed gear on the periphery of the gas guide pipe of the gas mixing chamber and cooperating with an external computer to accurately set the rotation angle of the gas guide pipe, the limitation that the position of the traditional gas guide pipe cannot be rotated can be broken, and flexible conversion of the position of the gas guide pipe can be realized. Here, the preparation method can adopt a combined machining method of milling and gear shaping.

[0058] In summary, the process chamber top cover and the film deposition equipment provided by the present application can be used to adjust the distance from each gas outlet to the plurality of gas inlets, to dynamically optimize the flow path and mixing time of the gas in the chamber, thereby effectively improving the gas mixing uniformity.

[0059] Although the above methods are illustrated and described as a series of acts for simplicity, it should be understood and appreciated that the methods are not limited by the order of acts, as some acts can, in accordance with one or more embodiments, occur in different orders and / or concurrently with other acts from that set of acts and other acts not depicted and described herein but which can be understood by those skilled in the art.

[0060] The previous description of the disclosure is provided to enable any person skilled in the art to make or use the disclosure. Various modifications to the disclosure will be readily apparent to those skilled in the art, and the generic principles defined herein can be applied to other variations without departing from the spirit or scope of the disclosure. Thus, the disclosure is not intended to be limited to the examples described herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A process chamber lid, comprising: The application relates to a top cover for a process chamber, comprising: a top cover body, comprising a plurality of gas inlets penetrating the upper and lower surfaces of the top cover body in the longitudinal direction, wherein the lower surface of the top cover body is provided with a gas mixing cavity concave upward, and the plurality of gas inlets are connected to different gas sources; a rotating disc, which covers the lower surface of the gas mixing cavity and is provided with at least one gas outlet penetrating the upper and lower surfaces of the rotating disc in the longitudinal direction; and a driving mechanism, which drives the rotating disc to rotate so as to adjust the distance between the gas outlet and each gas inlet. The driving mechanism drives the rotating disc to rotate multiple times during the process, so as to change the distance between the gas outlet and each gas inlet multiple times during the process.

2. The process cavity lid of claim 1, wherein, The driving mechanism continuously drives the rotating disc to rotate during the process, so as to continuously change the distance between the gas outlet and each gas inlet, or 3. The process cavity lid of claim 2, wherein, The driving mechanism step by step drives the rotating disc to rotate during the process, so as to step by step change the distance between the gas outlet and each gas inlet. The central region of the rotating disc is provided with at least one first gas outlet, and the edge region of the rotating disc is provided with at least one second gas outlet, 4. The process cavity lid of claim 1, wherein, the driving mechanism drives the rotating disc to rotate, so that the at least one first gas outlet is close to the plurality of gas inlets, thereby improving the film deposition rate of the central region of the wafer below the process chamber top cover, the driving mechanism drives the rotating disc to rotate, so that the at least one second gas outlet is close to the plurality of gas inlets, thereby improving the film deposition rate of the edge region of the wafer below the process chamber top cover. The line connecting the at least one first gas outlet to the center of the rotating disc is perpendicular to the line connecting the at least one second gas outlet to the center of the rotating disc, wherein 5. The process cavity lid of claim 4, wherein, the driving mechanism drives the at least one first gas outlet to be close to the plurality of gas inlets while driving the at least one second gas outlet to be away from the plurality of gas inlets, or the driving mechanism drives the at least one second gas outlet to be close to the plurality of gas inlets while driving the at least one first gas outlet to be away from the plurality of gas inlets. The plurality of gas inlets are arranged symmetrically along the center of the rotating disc, the central region of the rotating disc is provided with a plurality of first circular arc grooves for aligning corresponding gas inlets during rotation, the edge region of the rotating disc is provided with a plurality of second circular arc grooves for surrounding corresponding first circular arc grooves, 6. The process cavity lid of claim 5, wherein, each first circular arc groove is provided with a first gas guide pipe, and each first gas outlet is arranged at the first end of the corresponding first gas guide pipe, each second circular arc groove is provided with a second gas guide pipe, and each second gas outlet is arranged at the second end of the corresponding second gas guide pipe. The central region of the rotating disc is rotationally connected to the edge region thereof, and the process chamber top cover comprises a plurality of driving mechanisms, wherein 7. The process cavity lid of claim 4, wherein, a first driving mechanism is connected to the central region and is used for driving the central region to rotate independently, so that the at least one first gas outlet is close to the plurality of gas inlets, thereby improving the film deposition rate of the central region, a second driving mechanism is connected to the edge region and is used for driving the edge region to rotate independently, so that the at least one second gas outlet is close to the plurality of gas inlets, thereby improving the film deposition rate of the edge region. ​ 8. The process cavity lid of claim 4, wherein, in response to a first instruction for increasing the film deposition rate in the center region, the driving mechanism drives the rotating disc to reciprocally rotate in a preset first angular interval during the process, so that the distance from the at least one first gas outlet to the plurality of gas inlets is less than the distance from the at least one second gas outlet to the plurality of gas inlets, in response to a second instruction for decreasing the film deposition rate in the center region, the driving mechanism drives the rotating disc to reciprocally rotate in a preset second angular interval during the process, so that the distance from the at least one first gas outlet to the plurality of gas inlets is greater than the distance from the at least one second gas outlet to the plurality of gas inlets.

9. The process cavity lid of claim 1, wherein, the driving mechanism comprises a motor, a transmission shaft and a transmission gear, the edge of the rotating disc is provided with a gear structure, wherein, the motor is arranged above the top cover body, the first end of the transmission shaft is connected to the motor, and the second end thereof penetrates downward through the top cover body to enter the gas mixing cavity, and the transmission gear is installed on the second end of the transmission shaft and drives the gear structure of the edge of the rotating disc to rotate under the drive of the transmission shaft.

10. A thin film deposition apparatus, characterized by, comprising: a process chamber comprising the process chamber top cover as claimed in any one of claims 1-9; and a plurality of gas sources for providing a plurality of different gases required by a film deposition process to the plurality of gas inlets of the process chamber top cover. ​

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