Optical module

Abstract

In the optical module provided by the invention, the laser assembly comprises the substrate and the laser chip, and the laser chip is arranged on the surface of the substrate. The substrate is electrically connected with the circuit board, and the laser chip is electrically connected with the substrate. A light-emitting area is formed at one end of the laser chip, and the light-emitting area emits multiple beams of light without carrying information. A plurality of modulation areas are formed on one side of the light-emitting area, and in the plurality of modulation areas, one modulation area carries out signal modulation on one beam of light which does not carry information to generate a light signal. And multiple paths of optical signals can be generated by modulation through a plurality of modulation areas. A light-emitting port area is formed on one side of the plurality of modulation areas, the light-emitting port area is located on one side of the plurality of modulation areas, the light-emitting port area and the light-emitting area are oppositely arranged, and the plurality of modulation areas are located on the light-emitting area and the light-emitting port area. And multiple paths of optical signals modulated and generated by the plurality of modulation areas are output along the light outlet port area. In this way, the laser chip can output multiple paths of optical signals, array light emitting is achieved, the chip integration degree is improved, and the transmission rate of the optical module is increased.

Description

[0001] This application claims priority to the application with the application number 202410683508X filed on May 29, 2024 with the State Intellectual Property Office of China, the entire contents of which are incorporated herein by reference. TECHNICAL FIELD

[0002] The present disclosure relates to the field of optical communication technology, and in particular to an optical module. BACKGROUND

[0003] With the development of new business and application modes such as cloud computing, mobile Internet, and video, the progress of optical communication technology becomes increasingly important. In optical communication technology, optical modules, as one of the key devices in optical communication equipment, can realize optical-electrical signal conversion; in the development process of optical communication technology, the data transmission rate of optical modules is required to be continuously improved. SUMMARY

[0004] Some embodiments provide an optical module, which realizes the packaging between a laser chip capable of emitting multiple optical signals on the side based on a differential driving mode and a substrate.

[0005] In some embodiments, an optical module is provided, comprising:

[0006] a circuit board;

[0007] a laser assembly, comprising:

[0008] a substrate, electrically connected to the circuit board

[0009] a laser chip, disposed on the surface of the substrate and electrically connected to the substrate, the laser chip comprising:

[0010] a light emitting area located at one end of the laser chip, the light emitting area emitting multiple beams of non-information-carrying light;

[0011] a plurality of modulation areas located on one side of the light emitting area, one of the plurality of modulation areas modulating a beam of non-information-carrying light to generate an optical signal;

[0012] an optical output port area located on one side of the plurality of modulation areas, and the optical output port area is arranged opposite to the light emitting area, the plurality of modulation areas being located between the light emitting area and the optical output port area, and the plurality of modulation areas modulating the generated multiple optical signals to output along the optical output port area.

[0013] The technical scheme has the following advantages or beneficial effects: The optical module comprises a circuit board and a laser assembly. The laser assembly comprises a substrate and a laser chip, and the laser chip is arranged on the surface of the substrate. The substrate is electrically connected with the circuit board, and the laser chip is electrically connected with the substrate, thereby realizing signal transmission between the circuit board and the laser chip. One end of the laser chip is formed with a light-emitting area, and the light-emitting area emits a plurality of light beams without carrying information. One side of the light-emitting area is formed with a plurality of modulation areas. Among the plurality of modulation areas, one modulation area modulates one light beam without carrying information to generate an optical signal. After passing through the plurality of modulation areas, a plurality of optical signals can be modulated and generated. One side of the plurality of modulation areas is formed with an optical output port area. The optical output port area is located on one side of the plurality of modulation areas, and the optical output port area is arranged opposite to the light-emitting area. The plurality of modulation areas are located between the light-emitting area and the optical output port area. The plurality of optical signals modulated and generated by the plurality of modulation areas are output along the optical output port area. In this way, the laser chip can output a plurality of optical signals, realize array light output, improve the chip integration, and improve the transmission rate of the optical module.

[0014] In some embodiments, the light-emitting area comprises a first end and a second end arranged opposite to each other. The first end emits a first light beam, and the second end emits a second light beam. The first light beam and the second light beam do not carry information. The propagation direction of the second light beam is guided from the second end to the first end, so that the propagation directions of the second light beam and the first light beam are consistent.

[0015] The laser chip comprises:

[0016] A first beam splitter is arranged on the first light beam transmission path to split the first light beam into a first split light and a second split light. The first split light and the second split light are transmitted along one side of the light-emitting area.

[0017] A second beam splitter is arranged on the first end and on the second light beam transmission path to split the second light beam into a third split light and a fourth split light. The third split light and the fourth split light are transmitted along the other side of the light-emitting area.

[0018] The technical scheme has the following advantages or beneficial effects: the light emitting area includes a first end and a second end, the first end emits a first light beam, and the second end emits a second light beam, neither of which carries information. The propagation direction of the second light beam is guided from the second end to the first end, so that the second light beam is consistent with the first light beam in the propagation direction, that is, the second light beam is guided to the same propagation direction as the first light beam. The first beam splitter and the second beam splitter are located on the side of the first end of the light emitting area, so that the first light beam and the second light beam are transmitted to the first beam splitter and the second beam splitter, respectively, in the consistent propagation direction. The first beam splitter is located on the transmission light path of the first light beam to split the first light beam into a first light beam and a second light beam. The first light beam and the second light beam are transmitted along the side of the light emitting area. The second beam splitter is located on the transmission light path of the second light beam to split the second light beam into a third light beam and a fourth light beam. In this way, the light emitting area emits four light beams that do not carry information.

[0019] In some embodiments, the plurality of modulation areas include a first electro-absorption modulation area, a second electro-absorption modulation area, a third electro-absorption modulation area, and a fourth electro-absorption modulation area, the first electro-absorption modulation area performs signal modulation on the first light beam to generate a first optical signal, the second electro-absorption modulation area performs signal modulation on the second light beam to generate a second optical signal, the third electro-absorption modulation area performs signal modulation on the third light beam to generate a third optical signal, and the fourth electro-absorption modulation area performs signal modulation on the fourth light beam to generate a fourth optical signal.

[0020] The surface of the laser chip includes:

[0021] A first region is configured to set a first electrode group corresponding to the first electro-absorption modulation area, and the first electrode group includes:

[0022] A first radio frequency electrode is arranged on the surface of the laser chip and electrically connected to the substrate.

[0023] A second radio frequency electrode is arranged on one side of the first radio frequency electrode and electrically connected to the substrate.

[0024] A first direct current electrode is arranged on the other side of the first radio frequency electrode and electrically connected to the substrate.

[0025] A second direct current electrode is arranged on one side of the second radio frequency electrode and electrically connected to the substrate.

[0026] A second region is arranged adjacent to the first region and is configured to set a first bias electrode and a second bias electrode, the first bias electrode and the second bias electrode are respectively electrically connected to the light emitting area to input a bias current to the light emitting area, and the second region is arranged opposite to the light emitting port area.

[0027] A third region is arranged opposite to the first region, and is used for arranging a third electrode group corresponding to the third electro-absorption modulation region; the third electrode group comprises:

[0028] A third radio frequency electrode is arranged on the surface of the laser chip and is electrically connected with the substrate;

[0029] A fourth radio frequency electrode is arranged on one side of the third radio frequency electrode and is electrically connected with the substrate;

[0030] A third direct current electrode is arranged on the other side of the third radio frequency electrode and is electrically connected with the substrate;

[0031] A fourth direct current electrode is arranged on one side of the fourth radio frequency electrode and is electrically connected with the substrate.

[0032] The technical scheme has the following advantages or beneficial effects: the multiple modulation regions include a first electro-absorption modulation region, a second electro-absorption modulation region, a third electro-absorption modulation region and a fourth electro-absorption modulation region, the first electro-absorption modulation region performs signal modulation on the first light beam to generate a first optical signal, the second electro-absorption modulation region performs signal modulation on the second light beam to generate a second optical signal, the third electro-absorption modulation region performs signal modulation on the third light beam to generate a third optical signal, and the fourth electro-absorption modulation region performs signal modulation on the fourth light beam to generate a fourth optical signal. The laser chip outputs multiple optical signals to realize array light emission. The laser chip adopts a differential driving mode to reduce the power consumption of the laser chip. The first electro-absorption modulation region includes a first electrode group, and the first electrode group is a differential driving electrode group. The third electro-absorption modulation region includes a third electrode group, and the third electrode group is a differential driving electrode group. In order to set the electrode groups corresponding to the multiple electro-absorption modulation regions, the surface of the laser chip includes a first region, a second region and a third region. The first region is arranged adjacent to the second region, the third region is arranged opposite to the first region, and the second region is arranged opposite to the light emitting port region. The first region is used for setting the first electrode group corresponding to the first electro-absorption modulation region, the third region is used for setting the third electrode group corresponding to the third electro-absorption modulation region, and the second region is used for setting a first bias electrode and a second bias electrode. The first bias electrode and the second bias electrode are electrically connected to the light emitting region respectively, so as to input a bias current to the light emitting region. Further, the first electrode group includes a first radio frequency electrode, a second radio frequency electrode, a first direct current electrode and a second direct current electrode. The first radio frequency electrode and the second radio frequency electrode constitute a differential radio frequency electrode, and provide a differential driving modulation signal to the first electro-absorption modulation region. The first direct current electrode and the second direct current electrode constitute a differential direct current electrode, and provide a differential reverse bias voltage to the first electro-absorption modulation region. The first radio frequency electrode is arranged on the surface of the laser chip and is electrically connected to the substrate. The second radio frequency electrode is arranged on one side of the first radio frequency electrode and is electrically connected to the substrate. The first direct current electrode is arranged on the other side of the first radio frequency electrode and is electrically connected to the substrate. The second direct current electrode is arranged on one side of the second radio frequency electrode and is electrically connected to the substrate. The third electrode group includes a third radio frequency electrode, a fourth radio frequency electrode, a third direct current electrode and a fourth direct current electrode. The third radio frequency electrode and the fourth radio frequency electrode constitute a differential radio frequency electrode, and provide a differential driving modulation signal to the third electro-absorption modulation region. The third direct current electrode and the fourth direct current electrode constitute a differential direct current electrode, and provide a differential reverse bias voltage to the third electro-absorption modulation region. The first direct current electrode is located on one side of the first radio frequency electrode, the second radio frequency electrode is located on the other side of the first radio frequency electrode, and the first direct current electrode, the first radio frequency electrode and the second radio frequency electrode are sequentially arranged. The first radio frequency electrode is located on one side of the second radio frequency electrode, the second direct current electrode is located on the other side of the second radio frequency electrode, and the first direct current electrode, the first radio frequency electrode, the second radio frequency electrode and the second direct current electrode are sequentially arranged on the surface of the laser chip.The linear arrangement occupies a small area, and is conducive to meeting the differential driving mode requirement of multiple electric absorption modulation zones.

[0033] In some embodiments, the substrate comprises:

[0034] A first signal pad is disposed on the surface of the substrate, located on one side of the first radio frequency electrode, and electrically connected to the first radio frequency electrode;

[0035] A second signal pad is disposed on one side of the first signal pad, and electrically connected to the second radio frequency electrode;

[0036] A third signal pad is disposed on one side close to the circuit board, and electrically connected to the circuit board;

[0037] A fourth signal pad is disposed on one side of the third signal pad, and electrically connected to the circuit board;

[0038] A first differential driving signal line has one end connected to the first signal pad and the other end connected to the third signal pad;

[0039] A second differential driving signal line has one end connected to the second signal pad and the other end connected to the fourth signal pad;

[0040] A fifth signal pad is disposed on the other side of the first signal pad, and electrically connected to the first direct current electrode;

[0041] A sixth signal pad is disposed on one side of the second signal pad, and electrically connected to the second direct current electrode;

[0042] A seventh signal pad is disposed on one side close to the circuit board, and electrically connected to the circuit board;

[0043] An eighth signal pad is disposed on one side of the seventh signal pad, and electrically connected to the circuit board;

[0044] A first differential bias signal line has one end connected to the fifth signal pad and the other end connected to the seventh signal pad;

[0045] A second differential bias signal line has one end connected to the sixth signal pad and the other end connected to the eighth signal pad.

[0046] The technical scheme has the following advantages or beneficial effects: In order to meet the requirement of differential driving mode of the laser chip, the substrate includes a first signal pad, a second signal pad, a third signal pad and a fourth signal pad. The first signal pad is arranged on the surface of the substrate and is electrically connected with the first radio frequency electrode. The second signal pad is arranged on one side of the first signal pad and is electrically connected with the second radio frequency electrode. The third signal pad and the fourth signal pad are arranged on the side close to the circuit board and are electrically connected with the circuit board. The first differential driving signal line is connected between the first signal pad and the third signal pad, the first radio frequency electrode and the circuit board are electrically connected through the first differential driving signal line, so that the first differential driving modulation signal is input to the first electro-absorption modulation area through the first radio frequency electrode. The second differential driving signal line is connected between the second signal pad and the fourth signal pad, the second radio frequency electrode and the circuit board are electrically connected through the second differential driving signal line, so that the second radio frequency electrode inputs the second differential driving modulation signal to the first electro-absorption modulation area. The substrate includes a fifth signal pad, a sixth signal pad, a seventh signal pad and an eighth signal pad. The fifth signal pad is arranged on the other side of the first signal pad and is electrically connected with the first direct current electrode. The sixth signal pad is arranged on one side of the second signal pad and is electrically connected with the second direct current electrode. The seventh signal pad is arranged on the side close to the circuit board and is electrically connected with the circuit board. The eighth signal pad is arranged on one side of the seventh signal pad and is electrically connected with the circuit board. The first differential bias signal line is connected between the fifth signal pad and the seventh signal pad, the first direct current electrode and the circuit board are electrically connected through the first differential bias signal line, so that the first differential reverse bias voltage is input to the first electro-absorption modulation area through the first direct current electrode. The second differential bias signal line is connected between the sixth signal pad and the eighth signal pad, the second direct current electrode and the circuit board are electrically connected through the second differential bias signal line, so that the second differential reverse bias voltage is input to the first electro-absorption modulation area through the second direct current electrode. The first direct current electrode, the first radio frequency electrode, the second radio frequency electrode and the second direct current electrode are arranged on the surface of the laser chip in sequence. Correspondingly, the sixth signal pad, the second signal pad, the first signal pad and the fifth signal pad are arranged on the surface of the substrate in sequence. The linear arrangement occupies a small area, which is conducive to meeting the differential driving mode requirement of multiple electro-absorption modulation areas.

[0047] In some embodiments, the first electro-absorption modulation area includes a first electrode part and a second electrode part.

[0048] The first radio frequency electrode is electrically connected with the first electrode part; the first direct current electrode is electrically connected with the first radio frequency electrode, so that the first direct current electrode is electrically connected with the first electrode part.

[0049] The second radio frequency electrode is electrically connected with the second electrode part; the second direct current electrode is electrically connected with the second radio frequency electrode, so that the second direct current electrode is electrically connected with the second electrode part.

[0050] The technical scheme has the following advantages or beneficial effects: the first electric absorption modulation region comprises a first electrode part, a second electrode part, a first radio frequency electrode, a second radio frequency electrode, a first direct current electrode and a second direct current electrode. The first radio frequency electrode is electrically connected with the first electrode part, and the second radio frequency electrode is electrically connected with the second electrode part. The first direct current electrode is electrically connected with the first radio frequency electrode, and thus the first direct current electrode is electrically connected with the first electrode part. The second direct current electrode is electrically connected with the second radio frequency electrode, and thus the second direct current electrode is electrically connected with the second electrode part. The first differential driving modulation signal is input to the first electric absorption modulation region through the first radio frequency electrode, the second differential driving modulation signal is input to the second electric absorption modulation region through the second radio frequency electrode, the first differential reverse bias voltage is input to the first electric absorption modulation region through the first direct current electrode, and the second differential reverse bias voltage is input to the second electric absorption modulation region through the second direct current electrode. Under the action of the first differential reverse bias voltage and the second differential reverse bias voltage, the first electric absorption modulation region works. When the first electric absorption modulation region works, the first electrode part and the second electrode part simultaneously apply the first differential driving modulation signal and the second differential driving modulation signal with opposite phases to form a differential driving mode. Based on the electro-optical modulation effect, the light entering the second active layer is modulated by the differential driving modulation signal to generate an optical signal carrying information.

[0051] In some embodiments, the substrate surface is formed with a groove, and the laser chip is embedded in the groove so that the surface of the laser chip is flush with the surface of the substrate.

[0052] The technical scheme has the following advantages or beneficial effects: the substrate surface is formed with a groove, and the laser chip is embedded in the groove so that the surface of the laser chip is flush with the surface of the substrate, the wire length between the laser chip and the substrate is shortened, and the high-frequency signal transmission performance is improved.

[0053] In some embodiments, the light emitting region comprises a first light emitting waveguide, a second light emitting waveguide, a third light emitting waveguide and a fourth light emitting waveguide arranged side by side in sequence;

[0054] The plurality of modulation regions comprises a first modulation waveguide, a second modulation waveguide, a third modulation waveguide and a fourth modulation waveguide;

[0055] The output end of the first light emitting waveguide is connected to the input end of the first modulation waveguide, the output end of the second light emitting waveguide is connected to the input end of the second modulation waveguide, the output end of the third light emitting waveguide is connected to the input end of the third modulation waveguide, and the output end of the fourth light emitting waveguide is connected to the input end of the fourth modulation waveguide;

[0056] The laser chip comprises:

[0057] A first modulation pad is arranged above the first modulation waveguide and extends to the top of the first modulation waveguide;

[0058] a second modulation pad disposed above the second modulation waveguide and extending to a top of the second modulation waveguide;

[0059] a third modulation pad disposed above the third modulation waveguide and extending to a top of the third modulation waveguide;

[0060] a fourth modulation pad disposed above the fourth modulation waveguide and extending to a top of the fourth modulation waveguide;

[0061] a first light-emitting pad disposed above the first light-emitting waveguide;

[0062] a second light-emitting pad disposed above the second light-emitting waveguide;

[0063] a third light-emitting pad disposed above the third light-emitting waveguide;

[0064] a fourth light-emitting pad disposed above the fourth light-emitting waveguide;

[0065] The first modulation pad comprises a first wire-bonding portion, the second modulation pad comprises a second wire-bonding portion, the third modulation pad comprises a third wire-bonding portion, and the fourth modulation pad comprises a fourth wire-bonding portion; the first wire-bonding portion and the second wire-bonding portion are arranged side by side at a top between the first modulation waveguide and the second modulation waveguide, and the third wire-bonding portion and the fourth wire-bonding portion are arranged side by side at a top between the third modulation waveguide and the fourth modulation waveguide.

[0066] The technical scheme has the following advantages or beneficial effects: The laser chip is provided with four groups of waveguides, i.e., a first light-emitting waveguide-first modulation waveguide, a second light-emitting waveguide-second modulation waveguide, a third light-emitting waveguide-third modulation waveguide, and a fourth light-emitting waveguide-fourth modulation waveguide, and the first modulation pad and the second modulation pad are disposed above the first modulation waveguide and the second modulation waveguide, and the third modulation pad and the fourth modulation pad are disposed above the third modulation waveguide and the fourth modulation waveguide. In the laser chip provided by the disclosure, the first modulation pad comprises a first wire-bonding portion, the second modulation pad comprises a second wire-bonding portion, the third modulation pad comprises a third wire-bonding portion, and the fourth modulation pad comprises a fourth wire-bonding portion; the first wire-bonding portion and the second wire-bonding portion are arranged side by side at a top between the first modulation waveguide and the second modulation waveguide, and the third wire-bonding portion and the fourth wire-bonding portion are arranged side by side at a top between the third modulation waveguide and the fourth modulation waveguide, so as to facilitate control of the wire-bonding length of the laser chip and external devices, thereby facilitating guarantee of uniform high-frequency performance of the four channels of the laser chip, and being suitable for the demand of optical module integrated multi-channel optical signals.

[0067] In some embodiments, the light output end of the first modulating waveguide comprises a first deflection portion for tilting an optical axis of light output by the first modulating waveguide;

[0068] the light output end of the second modulating waveguide comprises a second deflection portion for tilting an optical axis of light output by the second modulating waveguide;

[0069] the light output end of the third modulating waveguide comprises a third deflection portion for tilting an optical axis of light output by the third modulating waveguide;

[0070] the light output end of the fourth modulating waveguide comprises a fourth deflection portion for tilting an optical axis of light output by the fourth modulating waveguide.

[0071] The technical scheme has the following advantages or beneficial effects: the first deflection part deflects the other end of the first modulation waveguide relative to the one end of the first modulation waveguide, so that the optical axis of the light signal output by the first modulation waveguide is deflected, and then the first deflection part inclines the optical axis of the light signal output by the first modulation waveguide relative to the optical axis of the light input by the first modulation waveguide. When the light-emitting end of the laser chip is provided with an optical device, part of the light signal output by the first modulation waveguide will be reflected by the optical device in the process of passing through the optical device, and the first deflection part can prevent the reflected light signal from entering the first modulation waveguide. The second deflection part deflects the other end of the second modulation waveguide relative to the one end of the second modulation waveguide, so that the optical axis of the light signal output by the second modulation waveguide is deflected, and then the second deflection part inclines the optical axis of the light signal output by the second modulation waveguide relative to the optical axis of the light input by the second modulation waveguide. When the light-emitting end of the laser chip is provided with an optical device, part of the light signal output by the second modulation waveguide will be reflected by the optical device in the process of passing through the optical device, and the second deflection part can prevent the reflected light signal from entering the second modulation waveguide. The third deflection part deflects the other end of the third modulation waveguide relative to the one end of the third modulation waveguide, so that the optical axis of the light signal output by the third modulation waveguide is deflected, and then the third deflection part inclines the optical axis of the light signal output by the third modulation waveguide relative to the optical axis of the light input by the third modulation waveguide. When the light-emitting end of the laser chip is provided with an optical device, part of the light signal output by the third modulation waveguide will be reflected by the optical device in the process of passing through the optical device, and the third deflection part can prevent the reflected light signal from entering the third modulation waveguide. The fourth deflection part deflects the other end of the fourth modulation waveguide relative to the one end of the fourth modulation waveguide, so that the optical axis of the light signal output by the fourth modulation waveguide is deflected, and then the fourth deflection part inclines the optical axis of the light signal output by the fourth modulation waveguide relative to the optical axis of the light input by the fourth modulation waveguide. When the light-emitting end of the laser chip is provided with an optical device, part of the light signal output by the fourth modulation waveguide will be reflected by the optical device in the process of passing through the optical device, and the fourth deflection part can prevent the reflected light signal from entering the fourth modulation waveguide.

[0072] In some embodiments, the first light-emitting pad comprises a first wire-bonding area, the second light-emitting pad comprises a second wire-bonding area, the third light-emitting pad comprises a third wire-bonding area, and the fourth light-emitting pad comprises a fourth wire-bonding area.

[0073] One end of the first wire-bonding area is close to the end face of the chip body, one end of the second wire-bonding area is close to the other end of the first wire-bonding area, the third wire-bonding area is located at the side of the second wire-bonding area, one end of the fourth wire-bonding area is close to the end face of the chip body, and the other end of the fourth wire-bonding area is close to one end of the third wire-bonding area.

[0074] The technical scheme has the following advantages or beneficial effects: the first light-emitting pad comprises a first wire-bonding area, and the first wire-bonding area is used for connecting a wire of the first light-emitting pad. One end of the first wire-bonding area is close to an end face of one end of the chip body, and the width of the first wire-bonding area is greater than the width of other areas on the first light-emitting pad, so as to facilitate wire bonding of the first light-emitting pad. The second light-emitting pad comprises a second wire-bonding area, and the second wire-bonding area is used for connecting a wire of the second light-emitting pad. One end of the second wire-bonding area is close to the other end of the first wire-bonding area, and the other end of the second wire-bonding area is away from the other end of the first wire-bonding area. The second wire-bonding area and the first wire-bonding area are staggered, so that the first light-emitting pad and the second light-emitting pad have sufficient wire-bonding space, and the space at the top of one end of the chip body can be fully utilized. The third light-emitting pad comprises a third wire-bonding area, and the third wire-bonding area is used for connecting a wire of the third light-emitting pad. The third wire-bonding area is located at a side of the second wire-bonding area, and the width of the third wire-bonding area is greater than the width of other areas on the third light-emitting pad, so as to facilitate wire bonding of the third light-emitting pad. The fourth light-emitting pad comprises a fourth wire-bonding area, and the fourth wire-bonding area is used for connecting a wire of the fourth light-emitting pad. One end of the fourth wire-bonding area is close to an end face of one end of the chip body, and the other end of the fourth wire-bonding area is close to one end of the third wire-bonding area. The fourth wire-bonding area and the third wire-bonding area are staggered, so that the third light-emitting pad and the fourth light-emitting pad have sufficient wire-bonding space, and the space at the top of one end of the chip body can be fully utilized.

[0075] In some embodiments, the laser chip further comprises a first insulating layer, a second insulating layer, a third insulating layer and a fourth insulating layer; the first insulating layer is arranged at a side of the first modulation waveguide and supports the first modulation pad, the second insulating layer is arranged at a side of the second modulation waveguide and supports the second modulation pad, the third insulating layer is arranged at a side of the third modulation waveguide and supports the third modulation pad, and the fourth insulating layer is arranged at a side of the fourth modulation waveguide and supports the fourth modulation pad.

[0076] The technical scheme has the following advantages or beneficial effects: the laser chip comprises a first insulating layer, the first insulating layer is arranged at a side of the first modulation waveguide and located below the first modulation pad. The laser chip comprises a second insulating layer, the second insulating layer is arranged at a side of the second modulation waveguide and located below the second modulation pad. The laser chip comprises a third insulating layer, the third insulating layer is arranged at a side of the third modulation waveguide and located below the third modulation pad. The laser chip comprises a fourth insulating layer, the fourth insulating layer is arranged at a side of the fourth modulation waveguide and located below the fourth modulation pad. The first insulating layer and the second insulating layer are used to reduce the parasitic capacitance effect of the first modulation pad and the second modulation pad, so as to improve the bandwidth of the laser chip. BRIEF DESCRIPTION OF DRAWINGS

[0077] In order to more clearly illustrate the technical solutions in the present disclosure, the drawings used in some embodiments of the present disclosure will be briefly introduced as follows. Obviously, the drawings in the following description are only some drawings of the embodiments of the present disclosure, and other drawings can also be obtained by those skilled in the art according to these drawings. In addition, the drawings in the following description can be regarded as schematic diagrams, and are not limited to the actual size, actual process, actual timing of signals, etc. of the products involved in the embodiments of the present disclosure.

[0078] Figure 1 A partial architecture diagram of an optical communication system according to some embodiments;

[0079] Figure 2 A partial structure diagram of a host computer according to some embodiments;

[0080] Figure 3 A structure diagram of an optical module according to some embodiments;

[0081] Figure 4 An exploded view of an optical module according to some embodiments;

[0082] Figure 5a An internal structure diagram of an optical module according to some embodiments;

[0083] Figure 5b An internal exploded view of an optical module according to some embodiments;

[0084] Figure 6a A structure diagram of an optical transmitting component according to some embodiments Figure 1 ;

[0085] Figure 6b A structure diagram of an optical transmitting component according to some embodiments Figure 2 ;

[0086] Figure 7a An optical path diagram of an optical receiving component according to some embodiments;

[0087] Figure 7b A structure diagram of a light folding member according to some embodiments;

[0088] Figure 7c An exploded view of a light folding member according to some embodiments;

[0089] Figure 8a An assembly exploded view of a circuit board according to some embodiments;

[0090] Figure 8b A cross-sectional view of an assembly of a circuit board according to some embodiments;

[0091] Figure 9aA partial view of a circuit board assembly according to some embodiments;

[0092] Figure 9b A partial view of a light emitting component according to some embodiments;

[0093] Figure 10a A partial view of a laser chip according to some embodiments;

[0094] Figure 10b A schematic view of a light path in a laser chip according to some embodiments;

[0095] Figure 11a A partial view of a first coupler according to some embodiments;

[0096] Figure 11b A partial view of a first coupler according to some embodiments;

[0097] Figure 11c A plan view of a waveguide layer according to some embodiments;

[0098] Figure 11d A plan view of a waveguide layer according to some embodiments;

[0099] Figure 12 A partial view of a light emitting region according to some embodiments;

[0100] Figure 13 A partial view of a light emitting region according to some embodiments;

[0101] Figure 14 A partial view of a laser chip according to some embodiments;

[0102] Figure 15 A partial view of a first electro-absorption modulating region according to some embodiments; Figure 1 ;

[0103] Figure 16 A partial view of a first electro-absorption modulating region according to some embodiments; Figure 2 ;

[0104] Figure 17 A partial view of a first electro-absorption modulating region according to some embodiments; Figure 3 ;

[0105] Figure 18 A partial view of a first electro-absorption modulating region according to some embodiments; Figure 4 ;

[0106] Figure 19 A laser assembly according to some embodiments;

[0107] Figure 20 A laser assembly exploded view according to some embodiments;

[0108] Figure 21 A laser assembly surface structure according to some embodiments Figure 1 ;

[0109] Figure 22 A laser assembly surface layout structure view according to some embodiments;

[0110] Figure 23 A laser assembly surface structure according to some embodiments Figure 2 ;

[0111] Figure 24 A capacitor arrangement schematic according to some embodiments;

[0112] Figure 25 A laser chip circuit schematic according to some embodiments;

[0113] Figure 26 A laser chip structure schematic according to some embodiments;

[0114] Figure 27 A laser chip structure according to some embodiments Figure 1 ;

[0115] Figure 28 A laser chip structure according to some embodiments Figure 2 ;

[0116] Figure 29 A laser chip structure according to some embodiments Figure 3 ;

[0117] Figure 30 A laser chip fabrication process flow schematic according to some embodiments;

[0118] Figure 31 A first electrical connection bridge fabrication process schematic according to some embodiments;

[0119] Figure 32 A laser chip fabrication process schematic according to some embodiments Figure 1 ;

[0120] Figure 33 A laser chip fabrication process schematic according to some embodiments Figure 2 ;

[0121] Figure 34 A laser chip fabrication process schematic according to some embodiments Figure 3 ;

[0122] Figure 35 A structural schematic diagram of a laser module according to some embodiments;

[0123] Figure 36 A structural schematic diagram of a laser chip according to some embodiments;

[0124] Figure 37 An exploded view of a laser chip according to some embodiments;

[0125] Figure 38 A partial enlargement of a laser chip according to some embodiments; Figure 1

[0126] Figure 39 A structural schematic diagram of a modulation pad in Figure 38

[0127] Figure 40 A partial enlargement of a laser chip according to some embodiments; Figure 2

[0128] Figure 41 A structural schematic diagram of yet another laser chip according to some embodiments;

[0129] Figure 42 A perspective view of a substrate according to some embodiments;

[0130] Figure 43 A top view of a substrate according to some embodiments;

[0131] Figure 44 A partial enlargement of A in Figure 43

[0132] Figure 45 A schematic of an electrical connection of a laser chip to a substrate according to some embodiments; Figure 1

[0133] Figure 46 A schematic of an electrical connection of a laser chip to a substrate according to some embodiments; Figure 2

[0134] Figure 47 A structural schematic diagram of another laser chip according to some embodiments;

[0135] Figure 48 A front view of another laser chip according to some embodiments;

[0136] Figure 49 A structural schematic diagram of another laser chip according to some embodiments, without a pad disposed thereon; ​​​​​​

[0137] Figure 50 A cross-sectional view of another laser chip provided according to some embodiments. Figure 1 ;

[0138] Figure 51 A cross-sectional view of another laser chip provided according to some embodiments. Figure 2 ;

[0139] Figure 52 A cross-sectional view of another laser chip provided according to some embodiments. Figure 3 ;

[0140] Figure 53 A cross-sectional view of another laser chip provided according to some embodiments. Figure 4 ;

[0141] Figure 54 This is a partial schematic diagram of another laser chip provided according to some embodiments. Figure 1 ;

[0142] Figure 55 This is a partial schematic diagram of another laser chip provided according to some embodiments. Figure 2 . Detailed Implementation

[0143] The embodiments of this disclosure will now be described clearly and in detail with reference to the accompanying drawings. However, the described embodiments are merely some, and not all, of the embodiments of this disclosure. All other embodiments obtained by those skilled in the art based on the embodiments provided in this disclosure are within the scope of protection of this disclosure.

[0144] Unless the context otherwise requires, throughout the specification and claims, the term "comprising" is interpreted as open and inclusive, meaning "including, but not limited to"; the terms "first" and "second" should not be construed as indicating or implying relative importance or indicating an upper limit on the number; the term "multiple" means two or more; the term "connection" should be interpreted broadly, for example, "connection" can be a fixed connection, a detachable connection, or an integral part, and can be a direct connection or an indirect connection through an intermediate medium; the use of the terms "applicable to" or "configured to" implies open and inclusive language, which does not exclude the applicability to or configuration of devices to perform additional tasks or steps; descriptions such as "parallel," "perpendicular," "identical," "consistent," and "aligned" are not limited to absolute mathematical theoretical relationships, but also include acceptable error ranges arising in practice, and differences based on the same design concept but due to manufacturing reasons.

[0145] In optical communication technology, in order to establish information transmission between information processing devices, information is loaded onto light, and the transmission of information is carried out by using the propagation speed of light. The light loaded with information is an optical signal. The optical signal can reduce the loss of optical power when transmitted in an optical information transmission device, and realize long-distance transmission of the optical signal. At the same time, the cost of optical information transmission devices such as optical fibers is lower than that of electrical information transmission devices such as copper wires. Therefore, optical communication technology can realize high-speed, long-distance and low-cost information transmission.

[0146] Information processing devices generally include optical network terminals (ONUs), gateways, routers, switches, mobile phones, computers, servers, tablets, televisions, etc. Optical information transmission devices generally include optical fibers and optical waveguides, etc. The signals that information processing devices can recognize and process are electrical signals, while optical communication technology uses optical signals for transmission, which requires optical modules to convert optical signals and electrical signals.

[0147] The optical module can realize the mutual conversion of optical signals and electrical signals between the information processing device and the optical information transmission device. In some embodiments, at least one of the optical signal input end or the optical signal output end of the optical module is connected with an optical fiber, and at least one of the electrical signal input end or the electrical signal output end of the optical module is connected with an optical network terminal; a first optical signal from the optical fiber is transmitted to the optical module, the optical module converts the first optical signal into a first electrical signal, and transmits the first electrical signal to the optical network terminal; a second electrical signal from the optical network terminal is transmitted to the optical module, the optical module converts the second electrical signal into a second optical signal, and transmits the second optical signal to the optical fiber.

[0148] Since multiple information processing devices can transmit information through electrical signals, at least one of the multiple information processing devices needs to be directly connected with the optical module, without the need for all information processing devices to be directly connected with the optical module. Here, the information processing device directly connected with the optical module is also referred to as the host computer of the optical module. In addition, the optical signal input end or the optical signal output end of the optical module is referred to as an optical port, and the electrical signal input end or the electrical signal output end of the optical module is referred to as an electrical port.

[0149] Figure 1 A partial structure diagram of an optical communication system according to some embodiments. As shown in Figure 1 the optical communication system mainly includes a remote information processing device 1000, a local information processing device 2000, a host computer 100 of an optical module, an optical module 200, an optical fiber 101 and a network cable 103, wherein the optical fiber 101 belongs to an optical information transmission device, and the network cable 103 belongs to an electrical information transmission device.

[0150] In some embodiments, one end of the optical fiber 101 extends towards the remote information processing device 1000, and the other end of the optical fiber 101 is connected to the optical module 200 through the optical port of the optical module 200. The optical signal can be totally reflected in the optical fiber 101, and the propagation of the optical signal in the direction of total reflection can maintain the original optical power. The optical signal is totally reflected multiple times in the optical fiber 101 to transmit the optical signal from the remote information processing device 1000 to the optical module 200, or to transmit the optical signal from the optical module 200 to the remote information processing device 1000, thereby realizing long-distance information transmission based on low power loss.

[0151] The optical communication system includes one or more optical fibers 101. In some embodiments, the optical fiber 101 is detachably connected to the optical module 200; in some embodiments, the optical fiber 101 is non-detachably connected to the optical module 200.

[0152] The host computer 100 is configured to provide a data signal to the optical module 200, or to receive a data signal from the optical module 200, or to monitor or control the working state of the optical module 200.

[0153] The host computer 100 includes a housing accommodating the optical module 200, and an optical module interface 102 disposed on the housing. The optical module 200 is inserted into the housing through the optical module interface 102, so that the host computer 100 and the optical module 200 establish a unidirectional or bidirectional electrical signal connection.

[0154] The host computer 100 further includes an external electrical interface, which can access an electrical signal network. In some embodiments, the external electrical interface includes a universal serial bus (USB) interface or a network cable interface 104. The network cable interface 104 is configured to access a network cable 103, so that the host computer 100 and the network cable 103 establish a unidirectional or bidirectional electrical signal connection.

[0155] One end of the network cable 103 is connected to the local information processing device 2000, and the other end of the network cable 103 is connected to the host computer 100, so that an electrical signal connection is established between the local information processing device 2000 and the host computer 100 through the network cable 103. In some embodiments, a third electrical signal emitted by the local information processing device 2000 is transmitted to the host computer 100 through the network cable 103, the host computer 100 generates a second electrical signal according to the third electrical signal, the second electrical signal from the host computer 100 is transmitted to the optical module 200, the optical module 200 converts the second electrical signal into a second optical signal, and transmits the second optical signal to the optical fiber 101, and the second optical signal is transmitted to the remote information processing device 1000 in the optical fiber 101.

[0156] In some embodiments, the first optical signal from the remote information processing device 1000 is transmitted through the optical fiber 101, the first optical signal from the optical fiber 101 is transmitted to the optical module 200, the optical module 200 converts the first optical signal into a first electrical signal, the optical module 200 transmits the first electrical signal to the host computer 100, the host computer 100 generates a fourth electrical signal according to the first electrical signal, and the fourth electrical signal is transmitted to the local information processing device 2000.

[0157] In some embodiments, the optical module is a tool for converting optical signals and electrical signals, and in the conversion process of the optical signals and the electrical signals, the information does not change, and the encoding or decoding mode of the information changes.

[0158] The host computer 100 includes an optical network terminal, an optical line terminal (OLT), an optical network device (ONT), or a data center server, etc.

[0159] Figure 2 A partial structure diagram of a host computer according to some embodiments. In order to clearly show the connection relationship between the optical module 200 and the host computer 100, Figure 2 Only the structure of the host computer 100 related to the optical module 200 is shown. As Figure 2 shown, in some embodiments, the host computer 100 further includes a PCB circuit board 105 arranged in the accommodation cavity, and a cage 106 arranged on the surface of the PCB circuit board 105; the optical module 200 is inserted into the cage 106 and fixed by the cage 106;

[0160] In some embodiments, the cage 106 is provided with a heat sink 107, which can dissipate heat for the optical module; in some embodiments, the heat sink 107 has a fin or other protruding structure to increase the heat dissipation area.

[0161] In some embodiments, the cage 106 is internally provided with an electrical connector configured to access the electrical port of the optical module 200.

[0162] In some embodiments, the optical module 200 is inserted into the cage 106 of the host computer 100, and the optical module 200 is fixed by the cage 106. The heat generated by the optical module 200 is conducted to the cage 106, and then diffused through the heat sink 107.

[0163] In some embodiments, the optical module 200 is inserted into the cage 106 of the host computer 100, and the electrical port of the optical module 200 is connected to the electrical connector inside the cage 106, so that the optical module 200 and the host computer 100 establish an electrical signal connection.

[0164] In some embodiments, the optical port of the optical module 200 is connected with the optical fiber 101, so that the optical module 200 establishes optical signal connection with the optical fiber 101.

[0165] Figure 3 FIG. 1 is a structural diagram of an optical module according to some embodiments, Figure 4 FIG. 2 is an exploded view of the optical module according to some embodiments. As shown in Figure 3 and Figure 4 In some embodiments, the optical module 200 includes a shell, which includes an upper shell 201 and a lower shell 202. The upper shell 201 covers the lower shell 202, forming two openings 204 and 205, one of which is an electrical port and the other of which is an optical port. In some embodiments, the shell forms one opening, which is both an electrical port and an optical port.

[0166] In some embodiments, the upper shell 201 and the lower shell 202 are made of metal material, which is conducive to electromagnetic shielding and heat dissipation.

[0167] The assembly method of the upper shell 201 and the lower shell 202 facilitates the installation of the circuit board 300, the optical transmitting component 400, the optical receiving component 500, etc. into the shell, and the shell can protect the above-mentioned components.

[0168] The direction of the connection line of the two openings 204 and 205 can be consistent with the length direction of the optical module 200, or can be inconsistent with the length direction of the optical module 200. For example, the opening 204 is located at the end of the optical module 200 (the right end of FIG. 1), and the opening 205 is also located at the end of the optical module 200 (the left end of FIG. 1). Alternatively, the opening 204 is located at the end of the optical module 200, and the opening 205 is located at the side of the optical module 200. Figure 3 Figure 3

[0169] In some embodiments, the lower shell 202 includes a bottom plate 2021 and two lower side plates 2022 located on both sides of the bottom plate 2021 and perpendicular to the bottom plate 2021; the upper shell 201 includes a cover plate 2011, which covers the two lower side plates 2022 of the lower shell 202 to form the shell.

[0170] In some embodiments, the lower shell 202 includes a bottom plate 2021 and two lower side plates 2022 located on both sides of the bottom plate 2021 and perpendicular to the bottom plate 2021; the upper shell 201 includes a cover plate 2011 and two upper side plates located on both sides of the cover plate 2011 and perpendicular to the cover plate 2011, and the two upper side plates and the two lower side plates 2022 are combined to cover the lower shell 202 by the upper shell 201.

[0171] As​​Figure 3 and Figure 4 As shown, in some embodiments, the optical module includes a circuit board 300 disposed within a housing. The circuit board 300 includes circuit traces, electronic components, and chips, etc. The electronic components and chips are connected according to the circuit design through the circuit traces to realize functions such as power supply, electrical signal transmission, and grounding. Electronic components may include, for example, capacitors, resistors, transistors, and metal-oxide-semiconductor field-effect transistors (MOSFETs). Chips may include microcontroller units (MCUs), laser driver chips, transimpedance amplifiers (TIAs), limiting amplifiers (LAs), clock and data recovery chips (CDRs), power management chips, and digital signal processing (DSP) chips.

[0172] In some embodiments, the circuit board includes a rigid circuit board, which, due to its relatively rigid material, can also serve a load-bearing function, such as being able to stably support the aforementioned electronic components and chips; the rigid circuit board can also be inserted into an electrical connector in the cage 106 of the host computer 100.

[0173] In some embodiments, the circuit board further includes a flexible circuit board, which can be used independently or in conjunction with a rigid circuit board.

[0174] In some embodiments, the circuit board further includes gold fingers formed on its end surface, the gold fingers consisting of a plurality of independent pins.

[0175] In some implementations, the gold fingers 301 are disposed on one side of the surface of the circuit board 300 (e.g., Figure 4 (as shown on the upper surface); In some implementations, the gold fingers 301 are disposed on the upper and lower surfaces of the circuit board 300 to provide a greater number of pins, thereby adapting to situations where the number of pins is required.

[0176] In some implementations, the gold fingers of the circuit board extend from the opening 204 and are inserted into the electrical connector of the host computer 100; the circuit board is inserted into the cage 106, and the gold fingers 301 are connected to the electrical connector inside the cage 106. The gold fingers 301 are configured to establish an electrical connection with the host computer, enabling electrical connection functions such as power supply, grounding, two-wire synchronous serial (Inter-Integrated Circuit, I2C) signal transmission, and data signal transmission.

[0177] In some embodiments, the light module 200 further comprises an unlocking component 600 located outside the shell of the light module 200. The unlocking component 600 is configured to achieve the fixed connection between the light module 200 and the host computer, or to release the fixed connection between the light module 200 and the host computer.

[0178] For example, the unlocking component 600 is located outside the two lower side plates 2022 of the lower shell 202, and comprises a clamping component matched with the cage 106 of the host computer 100. When the light module 200 is inserted into the cage 106, the light module 200 is fixed in the cage 106 by the clamping component of the unlocking component 600; when the unlocking component 600 is pulled, the clamping component of the unlocking component 600 moves accordingly, thereby changing the connection relationship of the clamping component with the host computer, to release the fixation of the light module 200 with the host computer, so that the light module 200 can be pulled out of the cage 106.

[0179] In some embodiments, the light module comprises a light emitting component 400.

[0180] In some embodiments, the light module comprises a light receiving component 500.

[0181] In some embodiments, at least one of the light emitting component 400 or the light receiving component 500 is located on the side of the circuit board 300 away from the gold finger 301.

[0182] In some embodiments, the light emitting component 400 and the light receiving component 500 are physically separated from the circuit board 300, and then are electrically connected to the circuit board 300 through corresponding flexible circuit boards or electrical connectors.

[0183] In some embodiments, at least one of the light emitting component or the light receiving component can be directly arranged on the circuit board 300. For example, at least one of the light emitting component or the light receiving component can be arranged on the surface of the circuit board 300 or the side of the circuit board 300.

[0184] Figure 5a FIG. 1 is a schematic diagram of an internal structure of a light module according to some embodiments, Figure 5b FIG. 2 is a schematic diagram of a partial disassembly of a light module according to some embodiments. As shown in Figure 5a and Figure 5b In some embodiments, the surface of the circuit board 300 is provided with the light receiving component 500 and the light emitting component 400.

[0185] In some embodiments, the light emitting component 400 is configured to receive an electrical signal and convert the electrical signal into an optical signal.

[0186] In some embodiments, the light emitting component 400 can include a housing 440 and a cover plate 450. The housing 440 and the cover plate 450 are connected to form a cavity. The cavity can be used to accommodate devices such as a laser assembly to protect the devices. The housing 440 includes a bottom plate and a side plate connected to the top of the edge of the bottom plate, and the bottom plate and the side plate form a housing with an open top. The top of the side plate supports the connection of the emitting cover plate 450.

[0187] In some embodiments, the light emitting component 400 can include a laser assembly 460. The laser assembly 460 is arranged inside the housing 440. The housing 440 has good thermal conductivity, which is conducive to heat dissipation of the laser assembly 460. The laser assembly 460 includes a substrate 420 and a laser chip 900. The laser chip 900 is electrically connected to the substrate 420, and the substrate 420 is electrically connected to the circuit board 300, thereby establishing an electrical connection between the laser chip 900 and the circuit board 300, and supplying power or inputting high-frequency signals to the laser chip 900. The laser assembly 460 can emit multi-channel optical signals to achieve high-speed transmission.

[0188] In some embodiments, the surface of the substrate 420 forms a circuit pattern including signal traces, pads, and the like. The laser chip 900 is electrically connected to the corresponding circuit pattern on the surface of the substrate 420 to supply power or input high-frequency signals to the laser chip 900 through the substrate 420 and the like.

[0189] In some embodiments, the laser chip 900 is located on the surface of the substrate 420, or the laser chip 900 is embedded in the substrate 420.

[0190] In some embodiments, the light emitting component 400 can include an optical fiber array 430. The optical fiber array 430 is located inside the housing 440. The optical fiber array 430 includes a fixing member 431a and an optical fiber bundle 432a. The optical fiber bundle 432a is fixed by the fixing member 431a, and the optical fiber bundle 432a includes a plurality of optical fibers that can correspond to the transmission of optical signals emitted by the laser chip 900 to achieve multi-channel transmission and improve overall transmission rate. For example, the laser chip 900 emits four beams of optical signals, and the optical fiber bundle 432a includes four optical fibers to correspond to the transmission of four beams of optical signals.

[0191] In some embodiments, the laser chip 900 is end-coupled to the optical fiber array 430, and the multi-channel optical signals emitted by the laser chip 900 are directly coupled into the laser chip 900.

[0192] In some embodiments, the light receiving component 500 is located on one side of the light emitting component 400. The light receiving component 500 is configured to receive optical signals and convert the optical signals into electrical signals.

[0193] In some embodiments, the light receiving component 500 can include a light folding member 510.

[0194] In some embodiments, the light receiving component 500 can include a light receiving chip 520.

[0195] In some embodiments, the light receiving component 500 can include a TIA 530.

[0196] In some embodiments, the light folding member 510 includes an optical fiber 511, the optical fiber 511 extends towards the light receiving chip 520, and the end of the optical fiber 511 is exposed above the light receiving chip 520. The end of the optical fiber 511 is formed with a reflection end face 512, and the reflection end face 512 is exposed above the light receiving chip 520. The reflection end face 512 is used to reflect the light signal transmitted by the optical fiber 511 to change the transmission direction of the light signal, so as to reflect the light signal transmitted by the optical fiber 511 to the light receiving chip 520, and realize the turning of the optical path.

[0197] In some embodiments, the TIA 530 is located on the surface of the circuit board 300 and on one side of the light receiving chip 520. The light receiving chip 520 converts the received optical signal into a photoelectric current signal, the TIA 530 converts the photoelectric current signal into a photoelectric voltage signal, and amplifies the photoelectric voltage signal.

[0198] Figure 6a Structure diagram of a light emitting component according to some embodiments Figure 1 , Figure 6b Structure diagram of a light emitting component according to some embodiments Figure 2 . As shown in Figure 6a and Figure 6b , in some embodiments, the light emitting component 400 includes a housing 440 and a cover plate 450, which are connected in a covering manner to form an emitting cavity, and the emitting cavity can be used to accommodate devices such as a laser assembly and a lens.

[0199] In some embodiments, the housing 440 includes a bottom plate and a side plate, the side plate is connected to the top of the edge of the bottom plate, and the bottom plate and the side plate form a housing with an open top. The top of the side plate supports the connection of the emitting cover plate 450.

[0200] In some embodiments, as shown in the direction of Figure 6a , a first notch 441 is formed on the side plate at the left end of the housing 440, and the first notch 441 communicates with the inner cavity of the housing 440. The optical fiber array 430 is arranged through the first notch 441, and the plurality of optical fibers of the optical fiber array 430 extend out of the housing 440 along the first notch 441.

[0201] In some embodiments, as shown in the direction of Figure 6b , a second notch 442 is formed at the right end of the housing 440, the bottom of the second notch 442 extends to the bottom plate of the housing 440, and the two sides of the second notch 442 extend to the side plates on both sides of the housing 440.

[0202] In some embodiments, the top of the shell 440 is formed with a first boss 443 and a second boss 444. The first boss 443 and the second boss 444 are formed by the outer wall of the side plate of the shell 440 protruding outwardly from the shell 440. The right end of the first boss 443 and the right end of the second boss 444 are beyond the right side of the second gap 442.

[0203] Figure 7a A schematic diagram of an optical path of a light receiving component according to some embodiments, Figure 7b A structural diagram of a light folding piece according to some embodiments, Figure 7c An exploded view of a light folding piece according to some embodiments. As shown in some embodiments, the reflective end face 512 reflects the optical signal transmitted by the optical fiber 511 to change the transmission direction of the optical signal in the optical fiber 511, so as to reflect the optical signal transmitted by the optical fiber 511 to the light receiving chip 520, thereby realizing the reception of the optical signal. Figures 7a-7c

[0204] In some embodiments, the light folding piece 510 can include an optical fiber 511. The light emitting end face of the optical fiber 511 is formed with a reflective end face 512.

[0205] In some embodiments, the light folding piece 510 can include a first optical fiber support part 513 and a second optical fiber support part 514. The first optical fiber support part 513 and the second optical fiber support part 514 are arranged oppositely, and a plurality of optical fibers 511 are clamped therebetween. The plurality of optical fibers 511 form an optical fiber array. The bottom surface of the first optical fiber support part 513 is formed with a V-shaped groove 517 for embedding the optical fiber 511.

[0206] In some embodiments, the light folding piece 510 can include an optical fiber fixing part 515. The optical fiber fixing part 515 is located at the tail of the second optical fiber support part 514 to fixedly connect the optical fiber 511. The optical fiber fixing part 515 plays a protective and buffering role for the optical fiber 511, thereby avoiding fiber breakage. Exemplarily, the optical fiber fixing part 515 is soft glue, which plays a protective and buffering role for the optical fiber 511.

[0207] In some embodiments, the length of the first optical fiber support part 513 is longer than that of the second optical fiber support part 514, and there is a space from the second optical fiber support part 514 to the end of the first optical fiber support part 513, which reserves a coating space for the optical fiber fixing part 515.

[0208] In some embodiments, the reflective end face 512 is an inclined surface, and the received optical signal transmitted by the optical fiber 511 undergoes total reflection at the reflective end face 512. Exemplarily, the inclination angle of the reflective end face 512 is 46-50°, such as 48°.

[0209] ​In some embodiments, the optical fiber 511 is arranged to pass through one end of the first optical fiber support part 513 and extend to the other end of the first optical fiber support part 513, so that the reflection end face 512 is located outside the other end of the first optical fiber support part 513. One end of the optical fiber fixing part 515 is connected to one end of the second optical fiber support part 514, and the other end of the optical fiber fixing part 515 is fixedly connected to the end of the optical fiber 511 to support the end of the optical fiber 511.

[0210] In some embodiments, the end face of the first optical fiber support part 513 is formed with a protection face 516 surrounding the side of the reflection end face 512 for protecting the reflection end face 512. For example, the protection face 516 is an inclined face with an inclination angle of 46-50°, such as an inclination angle of 48°.

[0211] In some embodiments, the reflection end face 512 and the protection face 516 are formed by grinding and polishing. The end face of the optical fiber 511 is ground to a certain inclination angle to form the reflection end face 512. The optical fiber 511 is cylindrical, and the cross section of the reflection end face 512 is elliptical after grinding, so that the bottom of the optical fiber 511 is exposed relative to the first optical fiber support part 513.

[0212] In some embodiments, a gap is left between the optical fiber fixing part 515 and the surface of the circuit board 300 to avoid the optical fiber fixing part 515 and the optical glue used to fix the second optical fiber support part 514 on the surface of the circuit board 300 from being adhered together, so as to maintain the binding force of the optical fiber fixing part 515 on the optical fiber 511.

[0213] In some embodiments, the light receiving chip 520 is located on the surface of the circuit board 300. When the model of the light receiving chip 520 is fixed, the thickness of the light receiving chip 520 is also fixed, so that the distance from the light sensitive surface of the light receiving chip 520 to the surface of the circuit board 300 is fixed.

[0214] In some embodiments, the distance between the reflection end face 512 and the light receiving chip 520 is small to ensure that the light signal reflected by the reflection end face 512 can be transmitted to the light sensitive surface of the light receiving chip 520 and then received by the light receiving chip 520. The thickness of the second optical fiber support part 514 is small to ensure that the distance between the reflection end face 512 and the light receiving chip 520 meets the preset distance. For example, the thickness of the second optical fiber support part 514 is smaller than that of the first optical fiber support part 513 to ensure that the distance between the reflection end face 512 and the light receiving chip 520 meets the preset distance.

[0215] In some embodiments, the second optical fiber support part 514 has a certain distance between the end and the reflection end face 512, and the length of the second optical fiber support part 514 does not extend to below the reflection end face 512 to leave space for the light receiving chip 520, so as to ensure that the distance between the reflection end face 512 and the light receiving chip 520 meets the preset distance.

[0216] Figure 8a Figure 1 is an exploded view of a circuit board assembly according to some embodiments, Figure 8b Figure 2 is a sectional view of a circuit board assembly according to some embodiments. As shown in Figure 8a and Figure 8b Figure 3, in some embodiments, the surface of the circuit board 300 is provided with a light receiving component 500 and a light emitting component 400.

[0217] In some embodiments, the surface of the circuit board 300 has a through hole 302. The shell 440 is embedded in the through hole 302, thereby fixing the shell 440 on the circuit board 300.

[0218] In some embodiments, the optical fiber bundle 432a extends to the outside of the shell 440 along the first gap 441 of the shell 440.

[0219] In some embodiments, the side walls on both sides of the bottom end of the shell 440 are inwardly recessed to support the circuit board 300 on both sides, thereby embedding the shell 440 in the through hole 302.

[0220] Figure 9a Figure 4 is a partial view of a circuit board assembly according to some embodiments, Figure 9b Figure 5 is a partial structural view of a light emitting component according to some embodiments. As shown in Figure 9a and Figure 9b Figure 6, in some embodiments, the surface of the circuit board 300 is provided with a light receiving component 500 and a light emitting component 400.

[0221] In some embodiments, the surface of the circuit board 300 has a through hole 302. The shell 440 is embedded in the through hole 302, thereby fixing the shell 440 on the circuit board 300.

[0222] In some embodiments, the laser chip 900 can be a single-channel light emitting laser chip or an array light emitting laser chip. The following embodiments will be exemplarily described taking the laser chip 900 as an array light emitting laser chip.

[0223] In some embodiments, the laser chip 900 emits multi-channel optical signals. The laser chip 900 has a plurality of light outlets, and the plurality of light outlets are optically connected with the light inlets of the optical fiber array 430, so that the multi-channel optical signals are transmitted into the corresponding optical fibers in the optical fiber bundle 432a.

[0224] In some embodiments, the laser chip 900 is coupled with the end surface of the optical fiber array 430. The laser chip 900 and the optical fiber array 430 are fixedly connected through refractive index matching optical glue.

[0225] In some embodiments, the surface of the substrate 420 is formed with a circuit pattern. The substrate 420 is electrically connected with the circuit board 300.

[0226] In some embodiments, the laser chip 900 can be an EML laser chip. The EML laser chip includes a Distributed Feedback Laser (DFB) and an Electro Absorption Modulator (EAM). Correspondingly, the laser chip 900 includes a light emitting region and an electro absorption modulation region.

[0227] In some embodiments, the light emitting region emits light without carrying a signal. The electro absorption modulation region is disposed on the light emitting path of the light emitting region to modulate the light emitted by the light emitting region without carrying a signal, and the modulation generates an optical signal.

[0228] In some embodiments, the surface of the circuit board 300 is provided with a bias current circuit. The output end of the bias current circuit is electrically connected to the surface of the substrate 420, and the surface of the substrate 420 is electrically connected to the light emitting region, thereby establishing an electrical connection between the bias current circuit and the light emitting region to load a forward bias current to the light emitting region. When the forward bias current is greater than a threshold value, the light emitting region emits light.

[0229] In some embodiments, the surface of the circuit board 300 is provided with a bias voltage circuit. The output end of the bias voltage circuit is electrically connected to the substrate 420, and the surface of the substrate 420 is electrically connected to the electro absorption modulation region, thereby establishing an electrical connection between the bias voltage circuit and the electro absorption modulation region to load a reverse bias voltage to the electro absorption modulation region.

[0230] In some embodiments, the surface of the circuit board 300 is provided with a driving circuit. The output end of the driving circuit is electrically connected to the substrate 420, and the surface of the substrate 420 is electrically connected to the electro absorption modulation region, thereby establishing an electrical connection between the driving circuit and the electro absorption modulation region to input a driving modulation signal to the electro absorption modulation region.

[0231] In some embodiments, a reverse bias voltage and a modulation current signal are provided to the electro absorption modulation region. Under the action of the reverse bias voltage, the intensity of the light emitted by the light emitting region changes with the change of the modulation current signal, thereby modulating the intensity and realizing intensity modulation, thereby generating an optical signal carrying information.

[0232] In some embodiments, the electro absorption modulation region is a P-I-N device that changes the transmission ability of light by using electro absorption effect, wherein the I layer is composed of a multi-quantum well waveguide. The modulation of the optical signal can be completed through the quantum confinement effect. When a reverse electric field is loaded to the active region of the electro absorption modulation region, the P-I-N forms a reverse bias, and the electron-hole pair level of the multi-quantum well is shifted, thereby causing the shift of the absorption peak position, and further modulating the generated optical signal.

[0233] Figure 10a An internal structure diagram of a laser chip according to some embodiments,Figure 10b A schematic diagram of a laser chip optical path according to some embodiments. As shown in FIG. 9, a laser chip 900 is provided. Figure 10a and Figure 10b In some embodiments, the laser chip 900 is integrated on chip to emit multi-channel optical signals, realizing multi-channel integration.

[0234] In some embodiments, the laser chip 900 is integrated on chip to emit light-emitting regions, electro-absorption modulation regions, and end-face couplers, to realize optical signal array output and low-loss coupling with the optical fiber array 430, improving transmission rate.

[0235] In some embodiments, the laser chip 900 includes a light-emitting region. The light-emitting region emits a beam of light that does not carry information along both ends of the active region.

[0236] In some embodiments, the laser chip 900 is integrated on chip to emit a beam of light from the light-emitting region, and the electro-absorption modulation region is located on the transmission path of the corresponding light to modulate the signal. For example, the laser chip 900 emits four beams of light, and the laser chip 900 includes a first beam splitter and a second beam splitter. The first beam splitter splits the light emitted along one end of the active region, and the second beam splitter splits the light emitted along the other end of the active region, generating four beams of light. The first beam splitter and the second beam splitter can be 1x2 multimode interference couplers, respectively.

[0237] In some embodiments, the laser chip 900 includes a plurality of electro-absorption modulation regions. The multi-channel light generated by splitting is transmitted through the transmission waveguide, and is modulated by the electro-absorption modulation region on each optical path, respectively, to emit multi-channel optical signals. For example, the laser chip 900 emits four beams of light, and the laser chip 900 includes a light-emitting region and four electro-absorption modulation regions.

[0238] In some embodiments, the output end face of the laser chip 900 is integrated with a plurality of end-face couplers to convert the small spot of the laser chip 900 into a large spot to match the mode spot of the optical fiber array 430, thereby realizing relatively low-loss coupling between the laser chip 900 and optical fibers of different sizes.

[0239] The following embodiments are exemplarily described with the laser chip 900 emitting four beams of light.

[0240] In some embodiments, the laser chip 900 can include a light emitting region 910. The light emitting region 910 emits a first light beam and a second light beam along two ends of the active region respectively. The first light beam is emitted from one end of the light emitting region 910, and the second light beam is emitted from another end of the light emitting region 910. Neither the first light beam nor the second light beam carries information. The end emitting the first light beam is defined as a first end of the light emitting region 910, and the end emitting the second light beam is defined as a second end of the light emitting region 910. The light emitting region 910 includes the first end and the second end, the first end emits the first light beam, and the second end emits the second light beam.

[0241] In some embodiments, the second light beam is guided in the same propagation direction as the first light beam. For example, the propagation direction of the second light beam is guided from the second end to the first end, so that the second light beam propagates in the same direction as the first light beam.

[0242] In some embodiments, the laser chip 900 can include a first optical splitter 920. The first optical splitter 920 is located on the transmission path of the first light beam, the first light beam is incident into the first optical splitter 920, and the first light beam is split into a first light beam and a second light beam. The first light beam is output from a first light output end of the first optical splitter 920, and the second light beam is output from a second light output end of the first optical splitter 920.

[0243] In some embodiments, the laser chip 900 can include a second optical splitter 930. The second optical splitter 930 is located on the same side of the light emitting region as the first optical splitter 920. For example, the second optical splitter 930 and the first optical splitter 920 are located on the side of the first end. The second optical splitter 930 is located on the transmission path of the second light beam, the second light beam is incident into the second optical splitter 930, and the second light beam is split into a third light beam and a fourth light beam. The third light beam is output from a first light output end of the second optical splitter 930, and the fourth light beam is output from a second light output end of the second optical splitter 930. Thus, there are four light beams on the output path of the light emitting region 910 to be modulated.

[0244] In some embodiments, the laser chip 900 can include a first electro-absorption modulation region 940. The first electro-absorption modulation region 940 is optically connected to the first light output end of the first optical splitter 920 to receive the first light beam. The first electro-absorption modulation region 940 is located on the transmission path of the first light beam to modulate the first light beam with a signal, and the modulation generates a first optical signal.

[0245] In some embodiments, the laser chip 900 can include a second electro-absorption modulation region 950. The second electro-absorption modulation region 950 is optically connected to the second light output end of the first optical splitter 920 to receive the second light beam. The second electro-absorption modulation region 950 is located on the transmission path of the second light beam to modulate the second light beam with a signal, and the modulation generates a second optical signal.

[0246] In some embodiments, the laser chip 900 can include a third electro-absorption modulation region 960. The third electro-absorption modulation region 960 is optically connected with the first light output end of the second optical splitter 930 to receive the third split light. The third electro-absorption modulation region 960 is located on the transmission light path of the third split light to perform signal modulation on the third split light, and the modulation generates a third optical signal.

[0247] In some embodiments, the laser chip 900 can include a fourth electro-absorption modulation region 970. The fourth electro-absorption modulation region 970 is optically connected with the second light output end of the second optical splitter 930 to receive the fourth split light. The fourth electro-absorption modulation region 970 is located on the transmission light path of the fourth split light to perform signal modulation on the fourth split light, and the modulation generates a fourth optical signal. At this point, the laser chip 900 modulates to generate four optical signals, realizes optical signal array output, improves chip integration, and improves transmission rate.

[0248] In some embodiments, the first electro-absorption modulation region 940 and the second electro-absorption modulation region 950 can be located on one side of the light emitting region 910 respectively, and the third electro-absorption modulation region 960 and the fourth electro-absorption modulation region 970 can be located on the other side of the light emitting region 910 respectively, which reasonably distributes multiple electro-absorption modulation regions and is beneficial to chip miniaturization.

[0249] In some embodiments, the first end of the light emitting region 910 is optically connected with the first optical splitter 920, and the second end of the light emitting region 910 is optically connected with the second optical splitter 930. The two light output ends of the first optical splitter 920 are optically connected with the first electro-absorption modulation region 940 and the second electro-absorption modulation region 950 respectively, and the two light output ends of the second optical splitter 930 are optically connected with the third electro-absorption modulation region 960 and the fourth electro-absorption modulation region 970 respectively.

[0250] In some embodiments, the light emitting region 910 is connected with the first optical splitter 920 and the second optical splitter 930 respectively by a transmission waveguide. The first light output end of the first optical splitter 920 is connected with the light input end of the first electro-absorption modulation region 940 by a transmission waveguide, and the second light output end is connected with the light input end of the second electro-absorption modulation region 950 by a transmission waveguide. The first light output end of the second optical splitter 930 is connected with the light input end of the third electro-absorption modulation region 960 by a transmission waveguide, and the second light output end is connected with the light input end of the fourth electro-absorption modulation region 970 by a transmission waveguide.

[0251] In some embodiments, the first end of the light emitting region 910 is connected with the first optical splitter 920 by a first transmission waveguide 981 to input the first light beam into the first optical splitter 920 for splitting. The first transmission waveguide 981 can be a straight waveguide.

[0252] In some embodiments, a second transmission waveguide 982 is connected between the second end of the light emitting region 910 and the second light splitter 930 to guide the second light beam into the second light splitter 930.

[0253] In some embodiments, the second transmission waveguide 982 is a bent waveguide, and the second transmission waveguide 982 includes a first bending region 9821, and two straight waveguides are respectively connected to two ends of the first bending region 9821. The first bending region 9821 bends from the second end of the light emitting region 910 towards the first end of the light emitting region 910 to bend the light path, and then the second light beam is folded back to the first end of the light emitting region 910. The first light splitter 920 and the second light splitter 930 can be arranged on the same side of the light emitting region 910, which is beneficial for chip miniaturization.

[0254] In some embodiments, the first light output end of the first light splitter 920 is optically connected to the light input end of the first electro-absorption modulation region 940. A third transmission waveguide 983 is connected between the first light output end of the first light splitter 920 and the light input end of the first electro-absorption modulation region 940. The third transmission waveguide 983 includes a second bending region 9831 to bend the transmission direction of the first light splitting. Two straight waveguides are respectively connected to two ends of the second bending region 9831.

[0255] In some embodiments, the second light output end of the first light splitter 920 is optically connected to the light input end of the second electro-absorption modulation region 950. A fourth transmission waveguide 984 is connected between the second light output end of the first light splitter 920 and the light input end of the second electro-absorption modulation region 950. The fourth transmission waveguide 984 includes a third bending region 9841 to bend the transmission direction of the second light splitting. Two straight waveguides are respectively connected to two ends of the third bending region 9841.

[0256] In some embodiments, the first light output end of the second light splitter 930 is optically connected to the light input end of the third electro-absorption modulation region 960. A fifth transmission waveguide 985 is connected between the first light output end of the second light splitter 930 and the light input end of the third electro-absorption modulation region 960. The fifth transmission waveguide 985 includes a fourth bending region 9851 to bend the transmission direction of the third light splitting. Two straight waveguides are respectively connected to two ends of the fourth bending region 9851.

[0257] In some embodiments, the second light output end of the second light splitter 930 is optically connected to the light input end of the fourth electro-absorption modulation region 970. A sixth transmission waveguide 986 is connected between the second light output end of the second light splitter 930 and the light input end of the fourth electro-absorption modulation region 970. The sixth transmission waveguide 986 includes a fifth bending region 9861 to bend the transmission direction of the fourth light splitting. Two straight waveguides are respectively connected to two ends of the fifth bending region 9861.

[0258] In some embodiments, the second bending region 9831 and the third bending region 9841 bend towards the same side, and the first light and the second light are guided to the same side.

[0259] In some embodiments, the fourth bending region 9851 and the fifth bending region 9861 bend towards the same side, and the third light and the fourth light are guided to the same side.

[0260] In some embodiments, the second bending region 9831 and the third bending region 9841 bend towards the first side along the two output ends of the first light splitter 920 respectively, and the fourth bending region 9851 and the fifth bending region 9861 bend towards the second side opposite to the first side along the two output ends of the second light splitter 930 respectively, so that the first light and the second light are guided to the first side, and the third light and the fourth light are guided to the second side, thereby reasonably deploying the optical path and facilitating the miniaturization of the laser chip with high integration.

[0261] In some embodiments, the second bending region 9831 and the third bending region 9841 bend towards the first side respectively, and the first light and the second light are guided to transmit on one side of the light emitting region 910 respectively. The first electric absorption modulation region 940 and the second electric absorption modulation region 950 are located on one side of the light emitting region 910.

[0262] In some embodiments, the fourth bending region 9851 and the fifth bending region 9861 bend towards the second side respectively, and the third light and the fourth light are guided to transmit on the other side of the light emitting region 910 respectively. The third electric absorption modulation region 960 and the fourth electric absorption modulation region 970 are located on the other side of the light emitting region 910, thereby reasonably deploying the four electric absorption modulation regions and facilitating the miniaturization of the chip.

[0263] In some embodiments, as the integration of the optical module is improved, the power consumption of the laser chip 900 needs to be further reduced to meet the overall power consumption requirement. The laser chip 900 adopts a differential driving mode to effectively reduce the power consumption. The differential driving modulation signals enter the electric absorption modulation regions respectively. The two differential signals have the same amplitude and frequency, but the phases are opposite. Compared with a single-ended driving chip, the differential driving has the advantages of stronger anti-noise interference ability, longer transmission distance, and lower power consumption.

[0264] In some embodiments, the first electric absorption modulation region 940 includes a first electrode part and a second electrode part. The first electrode part can be a P-face electrode, and the second electrode part can be an N-face electrode. The first electrode part and the second electrode part adopt a coplanar electrode form to reduce the parasitic capacitance between the electrodes of the modulation region.

[0265] In some embodiments, the light emitting region 910 and each electric absorption modulation region share a substrate. The substrate is a semi-insulating substrate, which avoids the driving modulation signals entering the electric absorption modulation region from being interfered by the light emitting region 910, and ensures the smooth differential driving.

[0266] In some embodiments, since the substrate is a semi-insulating substrate, the N-type electrode in the light emitting region 910 and the second electrode part of the first electro-absorption modulation region 940 cannot be disposed on the back surface of the substrate 911. For this reason, the N-type electrode in the light emitting region 910 and the P-type electrode are in the form of a coplanar electrode. The first electrode part and the second electrode part in the first electro-absorption modulation region 940 are also in the form of a coplanar electrode.

[0267] In some embodiments, the first electro-absorption modulation region 940 can include a first radio frequency electrode RF+. The first radio frequency electrode RF+ is electrically connected to the first electrode part to input a first differential drive modulation signal to the first electro-absorption modulation region 940.

[0268] In some embodiments, the first electro-absorption modulation region 940 can include a second radio frequency electrode RF-. The first radio frequency electrode RF+ and the second radio frequency electrode RF- constitute a differential drive electrode. The second radio frequency electrode RF- is electrically connected to the second electrode part to input a second differential drive modulation signal to the first electro-absorption modulation region 940. The second differential drive modulation signal and the first differential drive modulation signal constitute a differential pair.

[0269] In some embodiments, the first electro-absorption modulation region 940 can include a first direct current electrode DC+. The first direct current electrode DC+ is electrically connected to the first electrode part to input a first differential reverse bias voltage to the first electro-absorption modulation region 940.

[0270] In some embodiments, the first electro-absorption modulation region 940 can include a second direct current electrode DC-. The first direct current electrode DC+ and the second direct current electrode DC- constitute a differential reverse bias electrode. The second direct current electrode DC- is electrically connected to the second electrode part to input a second differential reverse bias voltage to the first electro-absorption modulation region 940. The second differential reverse bias voltage and the first differential reverse bias voltage constitute a differential pair.

[0271] In some embodiments, when the first electro-absorption modulation region 940 is working, the first electrode part and the second electrode part simultaneously apply the first differential drive modulation signal and the second differential drive modulation signal with opposite phases to form a differential drive mode. Based on the electro-optical modulation effect, the light entering the active region of the first electro-absorption modulation region 940 is modulated by the differential drive modulation signal to generate an optical signal carrying information. The coplanar electrode differential drive mode is used for signal modulation, thereby reducing power consumption.

[0272] In some embodiments, the first radio frequency electrode RF+ is electrically connected to the first electrode part. The second radio frequency electrode RF- is electrically connected to the second electrode part.

[0273] In some embodiments, the first direct current electrode DC+ is electrically connected to the first radio frequency electrode RF+, and the first direct current electrode DC+ is electrically connected to the first electrode part.

[0274] In some embodiments, the second direct current electrode DC- is electrically connected with the second radio frequency electrode RF-, and then the second direct current electrode DC- is electrically connected with the second electrode part.

[0275] In some embodiments, the differential driving mode of the second electro-absorption modulation region 950, the third electro-absorption modulation region 960, and the fourth electro-absorption modulation region 970 is the same as that of the first electro-absorption modulation region 940, which will not be expanded.

[0276] In some embodiments, the first electro-absorption modulation region 940 and the second electro-absorption modulation region 950 are arranged on one side of the light-emitting region 910 in a staggered manner to deploy respective differential driving electrodes and differential reverse bias electrodes.

[0277] In some embodiments, the third electro-absorption modulation region 960 and the fourth electro-absorption modulation region 970 are arranged on the other side of the light-emitting region 910 in a staggered manner to deploy respective differential driving electrodes and differential reverse bias electrodes.

[0278] In some embodiments, the laser chip 900 outputs multiple light signals. The light-emitting end of the first electro-absorption modulation region 940 outputs a first light signal, the light-emitting end of the second electro-absorption modulation region 950 outputs a second light signal, the light-emitting end of the third electro-absorption modulation region 960 outputs a third light signal, and the light-emitting end of the fourth electro-absorption modulation region 970 outputs a fourth light signal. The light-emitting end surface of the laser chip 900 is formed with four light-emitting ports, i.e., the four light-emitting ports are located on the same side, and then the respective light signals generated by modulation are output along the same side of the laser chip 900 to be coupled into the optical fiber array 430 along the same side, thereby realizing multiple light array outputs.

[0279] In some embodiments, the light field mode spot size mismatch occurs between the laser chip 900 and the optical fiber array 430, and coupling loss occurs between them. For example, the laser chip 900 outputs a light spot size smaller than the coupling light spot size of the optical fiber array 430.

[0280] In some embodiments, a plurality of couplers can be arranged between the laser chip 900 and the optical fiber array 430 to realize mode spot conversion. In some embodiments, a plurality of couplers can be integrated inside the laser chip 900 to realize mode spot conversion.

[0281] In some embodiments, an end face coupler is arranged on the light path of the light emitted by each electro-absorption modulation region to perform mode spot conversion, so as to enlarge the light spot size of the light signal output by the electro-absorption modulation region, thereby increasing the coupling efficiency between the laser chip and the optical fiber array 430, reducing the coupling loss, realizing the relatively low-loss coupling between the laser chip and the optical fiber of different sizes, and thus eliminating the need for separately arranging a converging lens between the laser chip 900 and the optical fiber array 430, so that the laser chip 900 and the optical fiber array 430 can be directly end face coupled and connected.

[0282] In some embodiments, various end-couplers are integrated within the laser chip 900, which can achieve low-loss coupling with different diameter fibers in waveguides with relatively wide tips and short dimensions.

[0283] In some embodiments, the structure of one of the couplers can refer to the coupling cross-sectional structure of the coupler in Figure 11a , and the structure of the first coupler 987 is described below.

[0284] In some embodiments, the first coupler 987 is disposed on the light path of the first electro-absorption modulation region 940 to perform mode spot conversion on the first optical signal, and to achieve low-loss coupling between the first optical signal and the fiber array 430. One end of the first coupler 987 is optically connected to the first electro-absorption modulation region 940, and the other end is optically connected to the fiber array 430.

[0285] In some embodiments, the second coupler 988 is disposed on the light path of the second electro-absorption modulation region 950 to perform mode spot conversion on the second optical signal, and to achieve low-loss coupling between the second optical signal and the fiber array 430. One end of the second coupler 988 is optically connected to the second electro-absorption modulation region 950, and the other end is optically connected to the fiber array 430.

[0286] In some embodiments, the third coupler 989 is disposed on the light path of the third electro-absorption modulation region 960 to perform mode spot conversion on the third optical signal, and to achieve low-loss coupling between the third optical signal and the fiber array 430. One end of the third coupler 989 is optically connected to the third electro-absorption modulation region 960, and the other end is optically connected to the fiber array 430.

[0287] In some embodiments, the fourth coupler 989a is disposed on the light path of the fourth electro-absorption modulation region 970 to perform mode spot conversion on the fourth optical signal, and to achieve low-loss coupling between the fourth optical signal and the fiber array 430. One end of the fourth coupler 989a is optically connected to the fourth electro-absorption modulation region 970, and the other end is optically connected to the fiber array 430.

[0288] In some embodiments, the first coupler 987 is located between the first electro-absorption modulation region 940 and the light output end face of the laser chip 900. The second coupler 988 is located between the second electro-absorption modulation region 950 and the light output end face of the laser chip 900. The third coupler 989 is located between the third electro-absorption modulation region 960 and the light output end face of the laser chip 900. The fourth coupler 989a is located between the fourth electro-absorption modulation region 970 and the light output end face of the laser chip 900. The coupled optical signals are output along the light output end face of the laser chip 900 and coupled into the fiber array 430.

[0289] In some embodiments, the first coupler 987, the second coupler 988, the third coupler 989, and the fourth coupler 989a can adopt the same structure. The following embodiments take the first coupler 987 as an example to illustrate the structure thereof.

[0290] Figure 11a FIG. 6 is a structural diagram of a first coupler according to some embodiments. Figure 11b FIG. 7 is a sectional structural diagram of a first coupler according to some embodiments. As shown in FIG. 7, in some embodiments, the first coupler 987 is disposed on the light path of the first electro-absorption modulation region 940. The first coupler 987 is used to perform mode spot conversion on the first light signal output by the first electro-absorption modulation region 940, and to amplify the spot size of the first light signal. The first light signal with amplified spot size is coupled into the optical fiber array 430, thereby realizing low-loss coupling between the laser chip 900 and the optical fiber array 430. Figure 11a Figure 11b

[0291] In some embodiments, the first coupler 987 can include a substrate 9871. The substrate 9871 is a semi-insulating substrate wafer.

[0292] In some embodiments, the first coupler 987 can include an N-InP layer 9872. The N-InP layer 9872 is located above the substrate 9871. The N-InP layer 9872 is an N-doped InP layer.

[0293] In some embodiments, the first coupler 987 can include a P-InP layer 9873. The P-InP layer 9873 is located above the N-InP layer 9872. The P-InP layer 9873 is a P-doped InP layer.

[0294] In some embodiments, the first coupler 987 can include a waveguide layer 9874. The waveguide layer 9874 is buried in the P-InP layer 9873. The waveguide layer 9874 is a passive transmission waveguide layer.

[0295] In some embodiments, the refractive index of the N-InP layer 9872 and the P-InP layer 9873 is less than the refractive index of the waveguide layer 9874, thereby confining the light field in the waveguide layer 9874 for transmission.

[0296] Figure 11c FIG. 8 is a plan structural diagram of a waveguide layer according to some embodiments. As shown in FIG. 8, in some embodiments, the waveguide layer 9874 is a passive transmission waveguide layer. Figure 11c ​​As shown, in some embodiments, waveguide layer 9874 includes a linearly graded region 9876. The linearly graded region 9876 can be a linearly graded region. Non-graded waveguide regions are connected to both ends of the linearly graded region 9876, one of which is optically connected to the first electro-absorption modulation region 940, and the other is optically connected to the fiber array 430. The width of the non-graded waveguide region optically connected to the first electro-absorption modulation region 940 is greater than the width of the non-graded waveguide region optically connected to the fiber array 430.

[0297] In some embodiments, in the linear gradient region 9876, the waveguide width of the waveguide layer 9874 gradually narrows with the direction of optical field propagation. As the waveguide width narrows, the optical confinement factor of the waveguide layer 9874 decreases, the waveguide layer 9874's ability to confine the optical field weakens, and the light spot is squeezed into the N-InP layer 9872 and the P-InP layer 9873, thereby increasing the light spot size, improving the optical field mode matching with the fiber array 430, and enabling the first optical signal to be coupled into the fiber array 430 with low loss.

[0298] In some embodiments, when coupling the first optical signal to the fiber array 430, the output position of the first coupler 987 should have a narrow waveguide width. Simultaneously, the linear gradient region 9876 will also be relatively long.

[0299] In some embodiments, a narrower waveguide width increases the difficulty of the etching process, while a longer linear gradient region 9876 results in a smaller divergence angle that satisfies thermal transmission requirements.

[0300] like Figure 11a and Figure 11b As shown, in some embodiments, the first coupler 987 may include a doped layer 9875. The doped layer 9875 is located within the N-InP layer 9872. The refractive index of the doped layer 9875 is greater than that of the N-InP layer 9872. The doped layer 9875 is a thin layer formed of InGaAsP material. Exemplarily, the thickness of the doped layer 9875 is less than the thickness of the N-InP layer 9872. For example, the thickness of the doped layer 9875 may be 60 nm.

[0301] In some embodiments, when the waveguide width of the linear gradient region 9876 is large, the role of the doped layer 9875 is limited. As the waveguide width narrows, the ability to confine the light spot weakens, the light spot becomes larger, and the optical field boundary extends to the doped layer 9875. The doped layer 9875 has a high refractive index, which helps to distribute more optical field in this layer structure, further enlarging the light spot size and increasing the coupling efficiency between the first optical signal and the fiber array 430.

[0302] In some embodiments, the setting of the doped layer 9875 makes the light spot larger than the light spot size when the doped layer 9875 is not set, under the same waveguide width. Then, to form the same light spot size, based on the doped layer 9875, the required output position waveguide width is smaller at this time, weakening the dependence on the waveguide width, reducing the difficulty of waveguide etching, and overcoming the technical barriers of the etching process of the narrower waveguide width.

[0303] In some embodiments, the refractive index size relationship between the waveguide layer 9874, the doped layer 9875, the P-InP layer 9873, and the N-InP layer 9872 can be: waveguide layer 9874 > doped layer 9875 > P-InP layer 9873 > N-InP layer 9872. Exemplarily, under the same doping concentration, the P-InP layer 9873 is larger than the N-InP layer 9872.

[0304] In some embodiments, the refractive index of the doped layer 9875 is greater than the refractive index of the P-InP layer 9873. The doped layer 9875 has a higher refractive index, which helps more light field to be distributed in the layer structure, further amplifying the light spot size. The refractive index of the doped layer 9875 is less than the refractive index of the waveguide layer 9874, and the main light field is more distributed in the waveguide layer 9874 for transmission, which is beneficial to reduce the transmission loss.

[0305] In some embodiments, the P-InP layer 9873 has a higher refractive index, and the waveguide layer 9874 is buried in the P-InP layer 9873, which is beneficial to limit the light field in the waveguide layer 9874 for transmission, reducing the transmission loss.

[0306] In some embodiments, by forming a doped layer 9875 in the N-InP layer 9872, the doped layer 9875 has a higher refractive index, which helps more light field to be distributed in the layer structure, further amplifying the light spot size. Then, to form the same light spot size, based on the setting of the doped layer 9875, the required waveguide width is smaller at this time, weakening the dependence on the waveguide width, reducing the difficulty of waveguide etching process.

[0307] Figure 11d Another waveguide layer planar structure according to some embodiments is shown in FIG. 9B. As shown in FIG. 9B, in some embodiments, the waveguide layer 9874 includes a nonlinearly tapered region 9877. One end of the nonlinearly tapered region 9877 is connected with a first non-tapered region 9878, and the other end is connected with a second non-tapered region 9879. Figure 11d

[0308] In some embodiments, the first non-tapered region 9878 is towards the first electro-absorption modulation region 940, and the first non-tapered region 9878 is optically connected with the first electro-absorption modulation region 940 to receive the optical signal output by the first electro-absorption modulation region 940.

[0309] ​In some embodiments, the second non-graded region 9879 is towards the optical fiber array 430, and the second non-graded region 9879 is optically connected with the optical fiber array 430 to transmit the mode-converted optical signal into the optical fiber array 430.

[0310] In some embodiments, the width of the waveguide of the first non-graded region 9878 is determined by the single mode condition of the laser chip 900, and the width of the waveguide of the second non-graded region 9879 is determined by the coupling efficiency with the optical fiber array 430. Exemplarily, the width of the waveguide of the first non-graded region 9878 is greater than the width of the waveguide of the second non-graded region 9879.

[0311] In some embodiments, a non-linear graded region 9877 is connected between the first non-graded region 9878 and the second non-graded region 9879, and in the non-linear graded region 9877, the width of the waveguide gradually changes from the width of the waveguide of the first non-graded region 9878 to the width of the waveguide of the second non-graded region 9879. The width of the waveguide connected with the first non-graded region 9878 is greater than the width of the waveguide connected with the second non-graded region 9879.

[0312] In some embodiments, the non-linear graded region 9877 adopts a non-linear graded area. The narrower the waveguide width, the more dramatic the change of the light field divergence angle with the waveguide width, and thus the wider the waveguide width, the faster the change, and when the waveguide width is narrow, the change should be slower to ensure the fundamental mode coupling efficiency and avoid exciting high-order modes. At this time, the purpose can be achieved in a shorter non-linear graded region 9877 length.

[0313] In some embodiments, the outer contour line of the non-linear graded region 9877 is an arc line, one side of the arc line is a first arc line 9771, and the other side of the arc line is a second arc line 9772. Exemplarily, the first arc line 9771 is a concave arc line, which is concave to the waveguide center. The second arc line 9772 is a convex arc line, which is convex to the waveguide center. In the direction from the first non-graded region 9878 to the second non-graded region 9879, the waveguide width between the first arc line 9771 and the second arc line 9772 gradually decreases. The waveguide width between the first arc line 9771 and the second arc line 9772 tends to the waveguide width of the second non-graded region. At this time, it can be ensured that the width changes faster when the waveguide width is wider, and the change is slower when the waveguide width is narrower, thereby ensuring the fundamental mode coupling efficiency and avoiding exciting high-order modes, and the adiabatic length of the non-linear graded region 9877 is shortened, thereby effectively shortening the overall length of the first coupler 940.

[0314] Figure 12 FIG. 1 is a schematic diagram of a light emitting region according to some embodiments, Figure 13 FIG. 2 is a schematic diagram of a light emitting region according to some embodiments. As shown in FIG. 2, Figure 12 and Figure 13As shown, in some embodiments, the light-emitting region 910 has a first end and a second end arranged oppositely, and the light-emitting region 910 emits light from the first end and the second end respectively, and the light does not carry information to be modulated.

[0315] In some embodiments, the light-emitting region 910 is provided with a bias current, and the light-emitting region 910 emits light under the action of the bias current.

[0316] In some embodiments, the light-emitting region 910 can include a substrate 911.

[0317] In some embodiments, the light-emitting region 910 can include an N-InP layer 912. The N-InP layer 912 is located above the substrate 911. The N-InP layer 912 is an N-doped InP layer. The N-InP layer 912 mainly outputs N-type carriers.

[0318] In some embodiments, the light-emitting region 910 can include a first active layer 913. The first active layer 913 is located above the N-InP layer 912. The first active layer 913 adopts a multi-quantum well structure. The first active layer 913 is configured to recombine P-type carriers and N-type carriers to generate photons. The N-type carriers are from the N-InP layer 912.

[0319] In some embodiments, the light-emitting region 910 can include a grating layer 914. The grating layer 914 is located above the first active layer 913.

[0320] In some embodiments, the light-emitting region 910 can include a P-InP layer 915. The P-InP layer 915 is located above the grating layer 914. The P-InP layer 915 is a P-doped InP layer. The P-InP layer 915 mainly outputs P-type carriers. The P-InP layer 915 inputs P-type carriers to the first active layer 913.

[0321] In some embodiments, within the first active layer 913, the stimulated radiation recombines discrete P-type carriers and N-type carriers to generate photons, thereby converting the injected carriers into photons. The photons are reflected by the resonant cavity or the distributed feedback grating to form positive feedback, and laser is generated. By changing the current injected into the grating layer 914, the effective refractive index of the grating layer 914 can be changed, thereby changing the laser resonant wavelength and realizing output of a specific wavelength. The light emitted from the two ends of the first active layer 913 does not carry signals.

[0322] In some embodiments, to ensure that the light-emitting power of the two ends of the first active layer 913 is consistent, the grating layer 914 can be a phase-shifted grating or a CPM grating, etc.

[0323] In some embodiments, the light emitting region 910 can include a P-type electrode 916 and an N-type electrode 917. Both are coplanar electrodes. The P-type electrode 916 and the N-type electrode 917 are electrically connected to a forward bias current source for power supply, respectively.

[0324] Figure 14 A partial cross-sectional view of a laser chip according to some embodiments. Figure 14 A partial cross-sectional view of a laser chip according to some embodiments. Figure 10a A partial cross-sectional view of a laser chip according to some embodiments. Figure 14 As shown, in some embodiments, the second end of the light emitting region 910 is connected to a second transmission waveguide 982, which folds back the second light beam emitted from the second end of the light emitting region 910 to the first end.

[0325] In some embodiments, the light emitting region 910 and the second transmission waveguide 982 can adopt the same waveguide structure. In the light emitting region 910, the first active layer 913 adopts a multi-quantum well structure for signal modulation. In this layer, the second transmission waveguide 982 corresponds to a transmission layer 9822, which adopts a waveguide material with low transmission loss to reduce transmission loss.

[0326] In some embodiments, the P-type electrode 916 is long enough to cover the corresponding surfaces of the light emitting region 910 and the second transmission waveguide 982.

[0327] In some embodiments, a SiO2 layer 919a is provided under the P-type electrode 916. A window is provided on the surface of the P-InP layer 915 to remove the corresponding SiO2 layer to ensure the electrical conductivity between the P-type electrode 916 and the first active layer 913. In the region corresponding to the second transmission waveguide 982, a SiO2 layer 919a is provided under the P-type electrode 916 to achieve insulation.

[0328] Figure 15 A partial cross-sectional view of a first electro-absorption modulation region according to some embodiments. Figure 1 .A partial cross-sectional view of a first electro-absorption modulation region according to some embodiments. Figure 15 A partial cross-sectional view of a first electro-absorption modulation region according to some embodiments. Figure 10a As shown, in some embodiments, the first electro-absorption modulation region 940 adopts a differential driving mode. Figure 15 In some embodiments, the first electro-absorption modulation region 940 includes a substrate 941.

[0329] In some embodiments, the first electro-absorption modulation region 940 includes an N-InP layer 942. The N-InP layer 942 is located above the substrate 941. The N-InP layer 942 is an N-type doped InP layer. The N-InP layer 942 mainly outputs N-type carriers.

[0330]

[0331] In some embodiments, the first electroabsorption modulation region 940 includes a second active layer 943. The second active layer 943 is located above the N-InP layer 942. The second active layer 943 employs a multi-quantum-well structure.

[0332] In some embodiments, the first electroabsorption modulation region 940 includes a P-InP layer 944. The P-InP layer 944 is located above the second active layer 943. The P-InP layer 944 is a P-type doped InP layer. The P-InP layer 944 primarily outputs P-type carriers. The P-InP layer 944 inputs P-type carriers to the second active layer 943, and the N-InP layer 942 inputs N-type carriers to the second active layer 943, thereby inputting a signal to the first electroabsorption modulation region 940.

[0333] In some embodiments, the first electroabsorption modulation region 940 includes a first electrode portion 945. The first electrode portion 945 is located above the P-InP layer 944. Exemplarily, the first electrode portion 945 is a P-type electrode.

[0334] In some embodiments, the first electroabsorption modulation region 940 includes a second electrode portion 946. The second electrode portion 946 and the first electrode portion 945 are coplanar electrodes. Exemplarily, the second electrode portion 946 is an N-type electrode.

[0335] In some embodiments, the first electrode portion 945 and the second electrode portion 946 are respectively electrically connected to a reverse bias electric field.

[0336] In some embodiments, the first electroabsorption modulation region 940 includes a first radio frequency electrode 9471. The first radio frequency electrode 9471 is electrically connected to the first electrode portion 945 to input a first differential drive modulation signal to the second active layer 943.

[0337] In some embodiments, a trench is provided between the first radio frequency electrode 9471 and the waveguide structure of the first electroabsorption modulation region 940 to achieve electrical isolation and ensure the quality of radio frequency signal transmission. A first electrical connection bridge 9481 is electrically connected between the first radio frequency electrode 9471 and the first electrode portion 945 to establish an electrical connection between the first radio frequency electrode 9471 and the first electrode portion 945.

[0338] Figure 16 A first electroabsorption modulation region profile structure according to some embodiments Figure 2 . Figure 10a For the appendix Figure 16 The cross-sectional structure corresponding to section line C. For example... Figure 17 As shown, in some embodiments, the first electroabsorption modulation region 940 employs a differential drive mode.

[0339] In some embodiments, the first electro-absorption modulation region 940 comprises a second radio frequency electrode 9472. The second radio frequency electrode 9472 is electrically connected with the second electrode part 946 to input a second differential driving modulation signal to the second active layer 943.

[0340] In some embodiments, a groove is provided between the second radio frequency electrode 9472 and the waveguide structure of the first electro-absorption modulation region 940 to achieve electrical isolation and ensure the quality of radio frequency signal transmission. The second radio frequency electrode 9472 is electrically connected with the second electrode part 946 through a second electrical connection bridge 9482 to establish electrical connection between the second radio frequency electrode 9472 and the second electrode part 946.

[0341] In some embodiments, the first electrical connection bridge 9481 and the second electrical connection bridge 9482 can be air bridges. The air bridge uses air with a small dielectric constant as a dielectric to reduce parasitic capacitance. Because air has a low dielectric constant, the signal transmission speed in the air bridge is relatively fast, and the loss is small. The structural design of the air bridge can optimize the signal transmission path, reduce signal reflection and scattering in the transmission process, and thus improve the transmission efficiency and quality of the signal.

[0342] In some embodiments, the first electrical connection bridge 9481 and the second electrical connection bridge 9482 are integrated inside the chip, and both belong to a chip-level structure, which is different from the gold wire bonding method.

[0343] Figure 3 A first electro-absorption modulation region cross-sectional structure according to some embodiments Figure 10a . Figure 17 A first electro-absorption modulation region cross-sectional structure according to some embodiments Figure 18 The cross-sectional structure corresponding to the cross-sectional line D. As shown in some embodiments, the first electro-absorption modulation region 940 adopts a differential driving mode. Figure 4

[0344] In some embodiments, the first electro-absorption modulation region 940 comprises a first direct current electrode 9473.

[0345] In some embodiments, the first direct current electrode 9473 is electrically connected with the first radio frequency electrode 9471. The first radio frequency electrode 9471 is electrically connected with the first electrode part 945, and thus the first direct current electrode 9473 is electrically connected with the first electrode part 945 to input a first differential reverse bias voltage to the second active layer 943.

[0346] In some embodiments, a first connection resistance 9491 is provided between the first direct current electrode 9473 and the first radio frequency electrode 9471 to establish electrical connection therebetween. The first connection resistance 9491 is an on-chip integrated resistance.

[0347] ​In some embodiments, an electrically isolated groove is formed between the first radio frequency electrode 9471 and the first direct current electrode 9473 to avoid mutual interference between the radio frequency signal and the direct current signal. A third electric connection bridge 9483 is formed above the electrically isolated groove.

[0348] In some embodiments, a first connection resistance 9491 and the third electric connection bridge 9483 are connected between the first radio frequency electrode 9471 and the first direct current electrode 9473 to realize the electrical connection between the first radio frequency electrode 9471 and the first direct current electrode 9473.

[0349] In some embodiments, the first connection resistance 9491 is connected to one end of the first radio frequency electrode 9471, one end of the first connection resistance 9491 is connected to the third electric connection bridge 9483, one end of the third electric connection bridge 9483 is connected to the first direct current electrode 9473, thereby realizing the electrical connection between the first radio frequency electrode 9471 and the first direct current electrode 9473, and further realizing the electrical connection between the first direct current electrode 9473 and the first electrode part 945.

[0350] Figure 10a A first electro-absorption modulation region cross-sectional structure according to some embodiments Figure 18 .A first electro-absorption modulation region cross-sectional structure according to some embodiments Figure 10a A first electro-absorption modulation region cross-sectional structure according to some embodiments Figure 19 A corresponding cross-sectional structure at the cross-sectional line E. As shown in some embodiments, each electro-absorption modulation region adopts a differential driving mode. The first electro-absorption modulation region 940 adopts a differential driving mode. The differential driving implementation mode is exemplarily described below taking the first electro-absorption modulation region 940 as an example. Figure 20

[0351] In some embodiments, the first electro-absorption modulation region 940 includes a second direct current electrode 9474.

[0352] In some embodiments, the second direct current electrode 9474 is electrically connected to a second radio frequency electrode 9472. The second radio frequency electrode 9472 is electrically connected to a second electrode part 946, and thus the second direct current electrode 9474 is electrically connected to the second electrode part 946 to input a second differential reverse bias voltage to the second active layer 943.

[0353] In some embodiments, a second connection resistance 9492 is arranged between the second radio frequency electrode 9472 and the second direct current electrode 9474 to establish the electrical connection therebetween. The second connection resistance 9492 is an on-chip integrated resistance.

[0354] In some embodiments, an electrically isolated groove is formed between the second radio frequency electrode 9472 and the second direct current electrode 9474 to avoid mutual interference between the radio frequency signal and the direct current signal. A fourth electric connection bridge 9484 is formed above the electrically isolated groove.

[0355] In some embodiments, a second connection resistor 9492 and a fourth electrical connection bridge 9484 are connected between the second radio frequency electrode 9472 and the second DC electrode 9474, thereby realizing the electrical connection between the second radio frequency electrode 9472 and the second DC electrode 9474.

[0356] In some embodiments, one end of the second radio frequency electrode 9472 is connected to a second connection resistor 9492, one end of the second connection resistor 9492 is connected to a fourth electrical connection bridge 9484, and one end of the fourth electrical connection bridge 9484 is connected to a second DC electrode 9474, thereby realizing the electrical connection between the second radio frequency electrode 9472 and the second DC electrode 9474, and further realizing the electrical connection between the second DC electrode 9474 and the second electrode portion 946.

[0357] In some embodiments, the first connecting resistor 9491 and the second connecting resistor 9492 are on-chip thin-film resistors, which can be implemented using semiconductor materials such as TaN or TiN. The sheet resistance is adjusted by the thickness, and the required resistance value is adjusted by the length and width. On-chip integrated resistors can reduce wire bonding length and decrease the impact of parasitic parameters on the high-speed performance of the chip.

[0358] In some embodiments, each electrical connection bridge may adopt an air bridge structure to reduce parasitic parameters and improve the high-speed characteristics of the chip.

[0359] In some embodiments, the first radio frequency electrode 9471, the second radio frequency electrode 9472, the first DC electrode 9473, and the second DC electrode 9474 are respectively disposed on the surface of the laser chip 900. For example... Figure 19 As shown, the first DC electrode 9473 is located on one side of the first RF electrode 9471, and the second RF electrode 9472 is located on the other side of the first RF electrode 9471. The first DC electrode 9473, the first RF electrode 9471, and the second RF electrode 9472 are arranged sequentially. The first RF electrode 9471 is located on one side of the second RF electrode 9472, and the second DC electrode 9474 is located on the other side of the second RF electrode 9472. The first DC electrode 9473, the first RF electrode 9471, the second RF electrode 9472, and the second DC electrode 9474 are arranged sequentially on the surface of the laser chip. This linear arrangement occupies a small area, which is beneficial for arranging the electrodes of the four electro-absorption modulation regions on the surface of the laser chip, thereby meeting the differential drive mode requirements of the four electro-absorption modulation regions.

[0360] In some embodiments, a method for fabricating a laser chip is provided, comprising: growing an N-InP layer along the surface of a substrate, growing a quantum well layer upward along the surface of the N-InP layer, and photolithographically fabricating a grating on the surface of the quantum well layer.

[0361] Then, etch away the quantum well layer and the grating with the preset width, and the remaining part forms the first active layer 913 in the light emitting region and the grating layer 914. Epitaxially joint growth of quantum well material along the first active layer 913 and the grating layer 914 to prepare the active layer of the subsequent electro-absorption modulation region. And joint growth of waveguide layer material in the transmission waveguide along the quantum well material to prepare each transmission waveguide. Growth of a large-area P-InP layer along the current surface.

[0362] Etch the quantum well material to form the active layer in the first electro-absorption modulation region 940, the second electro-absorption modulation region 950, the third electro-absorption modulation region 960 and the fourth electro-absorption modulation region 970. Etch the waveguide layer material to form the first transmission waveguide 981, the second transmission waveguide 982, the third transmission waveguide 983, the fourth transmission waveguide 984, the fifth transmission waveguide 985 and the sixth transmission waveguide 986.

[0363] Form the P-type electrode 916, the N-type electrode 917, the first bias electrode 918 and the second bias electrode 919 of the light emitting region and the first electrode part 945, the second electrode part 946, the first radio frequency electrode 9471, the second radio frequency electrode 9472, the first direct current electrode 9473 and the second direct current electrode 9474 corresponding to each electro-absorption modulation region by metal deposition, which is conducive to realizing the differential driving mode. Form a first electrical connection bridge between the first radio frequency electrode 9471 and the first electrode part 945 corresponding to the corresponding electro-absorption modulation region, which electrically connects the first radio frequency electrode 9471 and the first electrode part 945.

[0364] Form a second electrical connection bridge between the second radio frequency electrode 9472 and the second electrode part 946 corresponding to the corresponding electro-absorption modulation region, which electrically connects the second radio frequency electrode 9472 and the second electrode part 946. Form a first connection resistance and a third electrical connection bridge between the first radio frequency electrode 9471 and the first direct current electrode 9473, which electrically connects the first radio frequency electrode 9471 and the first direct current electrode 9473, and further electrically connects the first direct current electrode 9473 and the first electrode part 945. Form a second connection resistance and a fourth electrical connection bridge between the second radio frequency electrode 9472 and the second direct current electrode 9474, which electrically connects the second radio frequency electrode 9472 and the second direct current electrode 9474, and further electrically connects the second direct current electrode 9474 and the second electrode part 946.

[0365] In some embodiments, a first coupler 987 is etched on the light emitting path of the first electro-absorption modulation region 940, a second coupler 988 is etched on the light emitting path of the second electro-absorption modulation region 950, a third coupler 989 is etched on the light emitting path of the third electro-absorption modulation region 960, and a fourth coupler 989a is etched on the light emitting path of the fourth electro-absorption modulation region 970.

[0366] Figure 20A structure diagram of a laser module according to some embodiments, Figure 21 A structure diagram of a laser module according to some embodiments. As shown in Figure 1 and Figure 22 In some embodiments, the laser module 460 includes a laser chip 900 and a substrate 420. The surface of the substrate 420 is formed with a circuit pattern to establish electrical connection with the circuit board 300 and the laser chip 900 respectively.

[0367] In some embodiments, the surface of the laser chip 900 is connected with the surface of the substrate 420 by wire bonding to achieve electrical connection between the laser chip 900 and the substrate 420.

[0368] In some embodiments, the laser chip 900 and the substrate 420 have different positional relationships when the substrate 420 is made of different materials. For example, when the substrate 420 is made of a first material such as a ceramic substrate, the laser chip 900 is located on the surface of the substrate 420, and the surface of the laser chip 900 is higher than the surface of the substrate 420, so the wire bonding between them is longer. For example, when the substrate 420 is made of a second material such as a silicon substrate, the laser chip 900 can be embedded in the substrate 420 so that the surface of the laser chip 900 is flush with the surface of the substrate 420, shortening the wire bonding length between them, which is beneficial to improve the high-frequency signal transmission performance and increase the signal bandwidth.

[0369] In some embodiments, when the substrate 420 is made of a second material such as a silicon substrate, the surface of the substrate 420 is formed with a recess 421a. The laser chip 900 is embedded in the recess 421a to ensure that the surface of the laser chip 900 is flush with the surface of the substrate 420, shortening the wire bonding length between them.

[0370] In some embodiments, the laser chip 900 includes multiple electro-absorption modulation regions for signal modulation of multiple light channels to achieve multi-channel light signal array output.

[0371] In some embodiments, the laser chip 900 includes a first electro-absorption modulation region 940, a second electro-absorption modulation region 950, a third electro-absorption modulation region 960, and a fourth electro-absorption modulation region 970 for signal modulation of four-channel light to achieve four-channel array output.

[0372] In some embodiments, the first electro-absorption modulation region 940, the second electro-absorption modulation region 950, the third electro-absorption modulation region 960, and the fourth electro-absorption modulation region 970 are respectively driven in a differential mode to reduce power consumption.

[0373] In some embodiments, the first electroabsorption modulation region 940 includes a first radio frequency electrode 9471, a second radio frequency electrode 9472, a first DC electrode 9473, and a second DC electrode 9474. These four electrodes are disposed on the surface of the laser chip 900. Correspondingly, the four electrodes of the remaining electroabsorption modulation regions are also disposed on the surface of the laser chip 900. Exemplarily, these electrodes are disposed side by side on the surface of the laser chip 900.

[0374] In some embodiments, a light-emitting region 910 is formed at one end of the laser chip 900, emitting multiple beams of light without carrying information. Multiple modulation regions are formed on one side of the light-emitting region 910. In each modulation region, one of the beams of light without carrying information modulates a signal to generate an optical signal. Multiple optical signals can be generated by modulation through the multiple modulation regions. An output port region 900d is formed on one side of the multiple modulation regions. The output port region 900d includes multiple output ports, and the modulated optical signals are output along the corresponding output ports. The output port region 900d is positioned opposite the light-emitting region 910, with the multiple modulation regions located between the light-emitting region 910 and the output port region 900d. The multiple optical signals generated by the modulation of the multiple modulation regions are output along the output port region 900d. Thus, the laser chip can output multiple optical signals, achieving array-based light output, improving chip integration, and increasing the transmission rate of the optical module. The multiple modulation regions include a first electroabsorption modulation region 940, a second electroabsorption modulation region 950, a third electroabsorption modulation region 960, and a fourth electroabsorption modulation region 970.

[0375] Figure 21 A surface structure of a laser component according to some embodiments Figure 22 , Figure 23 This is a surface layout structure diagram of a laser component according to some embodiments. For example... Figure 2 and Figure 24 As shown, in some embodiments, the surface of the substrate 420 has a circuit pattern to enable electrical connection between the substrate 420 and the circuit board 300 and the laser chip 900, respectively.

[0376] In some embodiments, two differential bias circuits are added to the output circuit of the electroabsorption modulation region to improve high-frequency performance and reduce the overall design size of the chip.

[0377] In some embodiments, the dashed rectangle A on the surface of the laser chip 900 marks the area corresponding to the first electroabsorption modulation region 940. The dashed rectangle B marks the area corresponding to the second electroabsorption modulation region 950. The dashed rectangle C marks the area corresponding to the third electroabsorption modulation region 960. The dashed rectangle D marks the area corresponding to the fourth electroabsorption modulation region 970.

[0378] In some embodiments, the electrodes enclosed by the dashed rectangular frame A are a first electrode group in the first electro-absorption modulation region 940. The first electrode group includes a first radio frequency electrode 9471, a second radio frequency electrode 9472, a first direct current electrode 9473, and a second direct current electrode 9474.

[0379] In some embodiments, the electrodes enclosed by the dashed rectangular frame B are a second electrode group in the second electro-absorption modulation region 950. The second electrode group is the same as the first electrode group.

[0380] In some embodiments, the electrodes enclosed by the dashed rectangular frame C are a third electrode group in the third electro-absorption modulation region 960. The third electrode group includes a third radio frequency electrode 9471a, a fourth radio frequency electrode 9472a, a third direct current electrode 9473a, and a fourth direct current electrode 9474a.

[0381] In some embodiments, the electrodes enclosed by the dashed rectangular frame D are a fourth electrode group in the fourth electro-absorption modulation region 970. The fourth electrode group is the same as the first electrode group.

[0382] In some embodiments, the first radio frequency electrode 9471 is electrically connected to the first electrode part 945. The second radio frequency electrode 9472 is electrically connected to the second electrode part 946.

[0383] In some embodiments, the first direct current electrode 9473 is electrically connected to the first radio frequency electrode 9471, and the first direct current electrode 9473 is electrically connected to the first electrode part 945. Exemplarily, a first connecting resistor 9491 is arranged between the first direct current electrode 9473 and the first radio frequency electrode 9471.

[0384] In some embodiments, the second direct current electrode 9474 is electrically connected to the second radio frequency electrode 9472, and the second direct current electrode 9474 is electrically connected to the second electrode part 946. Exemplarily, a second connecting resistor 9492 is arranged between the second direct current electrode 9474 and the second radio frequency electrode 9472.

[0385] In some embodiments, the surface of the substrate 420 is provided with four differential drive signal lines corresponding to the four electro-absorption modulation regions. Differential wiring can improve the mutual coupling characteristics during signal transmission, reduce dependence on ground, and improve signal bandwidth.

[0386] In some embodiments, the inner layer of the substrate 420 is provided with four differential bias signal lines corresponding to the four electro-absorption modulation regions, avoiding crossing with the differential drive signal lines, thereby avoiding interference of the radio frequency signal by the direct current signal and ensuring the quality of radio frequency signal transmission.

[0387] In some embodiments, the laser chip 900 is provided with a first region 900a, a second region 900b, and a third region 900c. The first region 900a is adjacent to the second region 900b, and the first region 900a is opposite to the third region 900c. The light output port region 900d is opposite to the second region 900b.

[0388] In some embodiments, the first region 900a is adjacent to one side of the second region 900b, and the third region 900c is adjacent to the other side of the second region 900b. The light output port region 900d is opposite to the second region 900b.

[0389] In some embodiments, the first region 900a is provided with a first electrode group in the first electro-absorption modulation region 940 and a second electrode group in the second electro-absorption modulation region 950.

[0390] In some embodiments, the second region 900b is provided with a first bias electrode and a second bias electrode, which are electrically connected to the light emitting region respectively to input a bias current to the light emitting region.

[0391] In some embodiments, the third region 900c is provided with a third electrode group in the third electro-absorption modulation region 960 and a fourth electrode group in the fourth electro-absorption modulation region 970.

[0392] In some embodiments, taking the first electro-absorption modulation region 940 as an example, the substrate 420 is provided with a first differential drive signal line 4221 and a second differential drive signal line 4222, which are electrically connected to the first electro-absorption modulation region 940 respectively to input a differential drive modulation signal to the first electro-absorption modulation region 940.

[0393] In some embodiments, one end of the first differential drive signal line 4221 is electrically connected to the circuit board 300, and the other end is electrically connected to the first radio frequency electrode 9471 to input a first differential drive modulation signal to the first electro-absorption modulation region 940.

[0394] In some embodiments, one end of the second differential drive signal line 4222 is electrically connected to the circuit board 300, and the other end is electrically connected to the second radio frequency electrode 9472 to input a second differential drive modulation signal to the first electro-absorption modulation region 940.

[0395] In some embodiments, the substrate 420 is provided with a first signal pad 4231 and a second signal pad 4232 adjacent to one surface of the laser chip 900, and the substrate 420 is provided with a third signal pad 4233 and a fourth signal pad 4234 adjacent to one surface of the circuit board 300.

[0396] In some embodiments, the first signal pad 4231 is connected with the third signal pad 4233 through a first differential driving signal line 4221. The first differential driving signal line 4221 is connected with the first radio frequency electrode 9471 through wire bonding, and the first radio frequency electrode 9471 is electrically connected with the first electrode part 945, so as to input the first differential driving modulation signal to the first electrical absorption modulation area 940.

[0397] In some embodiments, the second signal pad 4232 is connected with the fourth signal pad 4234 through a second differential driving signal line 4222. The second differential driving signal line 4222 is connected with the second radio frequency electrode 9472 through wire bonding, and the second radio frequency electrode 9472 is electrically connected with the second electrode part 946, so as to input the second differential driving modulation signal to the first electrical absorption modulation area 940.

[0398] In some embodiments, the first direct current electrode 9473, the first radio frequency electrode 9471, the second radio frequency electrode 9472, and the second direct current electrode 9474 are sequentially arranged on the surface of the laser chip, and are arranged in a straight line, so as to occupy a small area, and facilitate the arrangement of the four electrodes of the electrical absorption modulation area on the surface of the laser chip, so as to meet the differential driving mode requirement of the four electrical absorption modulation areas.

[0399] In some embodiments, in order to meet the differential driving mode requirement of the laser chip 900, the first signal pad 4231 is arranged on the surface of the substrate 420 and is electrically connected with the first radio frequency electrode 9471. The second signal pad 4232 is arranged on one side of the first signal pad 4231 and is electrically connected with the second radio frequency electrode 9471. The third signal pad 4233 and the fourth signal pad 4234 are arranged on the side close to the circuit board 300 and are electrically connected with the circuit board 300.

[0400] In some embodiments, the first signal pad 4231 is connected with the third signal pad 4233 through a first differential driving signal line 4221, and the first radio frequency electrode 9471 and the circuit board 300 are electrically connected through the first differential driving signal line 4221, so as to input the first differential driving modulation signal to the first electrical absorption modulation area 940 through the first radio frequency electrode 9471.

[0401] In some embodiments, the second signal pad 4232 is connected with the fourth signal pad 4234 through a second differential driving signal line 4222, and the second radio frequency electrode 9472 and the circuit board 300 are electrically connected through the second differential driving signal line 4222, so as to input the second differential driving modulation signal to the first electrical absorption modulation area 940 through the second radio frequency electrode 9472.

[0402] In some embodiments, in order to meet the differential driving mode requirement of the laser chip 900, the fifth signal pad 4241 is located on the other side of the first signal pad 4231 and is electrically connected to the first DC electrode 9473. The sixth signal pad 4243 is located on one side of the second signal pad 4232 and is electrically connected to the second DC electrode 9473. The seventh signal pad 4242 is located on one side close to the circuit board 300 and is electrically connected to the circuit board 300. The eighth signal pad 4244 is located on one side of the seventh signal pad 4242 and is electrically connected to the circuit board 300.

[0403] In some embodiments, a first differential bias signal line 4251 is connected between the fifth signal pad 4241 and the seventh signal pad 4242, and the first DC electrode 9473 and the circuit board 300 are electrically connected through the first differential bias signal line 4251, so that a first differential reverse bias voltage is input to the first electro-absorption modulation region 940 through the first DC electrode 9473.

[0404] In some embodiments, a second differential bias signal line 4252 is connected between the sixth signal pad 4243 and the eighth signal pad 4244, and the second DC electrode 9474 and the circuit board 300 are electrically connected through the second differential bias signal line 4252, so that a second differential reverse bias voltage is input to the first electro-absorption modulation region 940 through the second DC electrode 9474.

[0405] In some embodiments, the first DC electrode 9473 is located on one side of the first RF electrode 9471, the second RF electrode 9472 is located on the other side of the first RF electrode 9471, and the first DC electrode 9473, the first RF electrode 9471 and the second RF electrode 9472 are arranged in sequence. The first RF electrode 9471 is located on one side of the second RF electrode 9472, and the second DC electrode 9474 is located on the other side of the second RF electrode 9472, and the first DC electrode 9473, the first RF electrode 9471, the second RF electrode 9472 and the second DC electrode 9474 are arranged in sequence on the surface of the laser chip 900. Correspondingly, the sixth signal pad 4243, the second signal pad 4232, the first signal pad 4231 and the fifth signal pad 4241 are arranged in sequence on the surface of the substrate 420. The straight arrangement occupies a small area, which is conducive to the distributed arrangement of multiple electro-absorption modulation regions, thereby meeting the differential driving mode requirement of multiple electro-absorption modulation regions.

[0406] In some embodiments, the third signal pad 4233 is provided with a first ground pad 4235 on one side, and the fourth signal pad 4234 is provided with a second ground pad 4236 on one side. The third signal pad 4233 and the fourth signal pad 4234 are located between the first ground pad 4235 and the second ground pad 4236, thereby forming a G-S-S-G differential driving mode, which is conducive to improving the noise immunity of the chip and reducing power consumption.

[0407] In some embodiments, the third differential drive signal line 4223 and the fourth differential drive signal line 4224 are formed on the surface of the substrate 420 and are electrically connected to the second electro-absorption modulation region 950 respectively to input differential drive modulation signals to the second electro-absorption modulation region 950.

[0408] In some embodiments, one end of the third differential drive signal line 4223 is electrically connected to the circuit board 300 and the other end is electrically connected to the first radio frequency electrode of the second electro-absorption modulation region 950 to input a first differential drive modulation signal to the second electro-absorption modulation region 950.

[0409] In some embodiments, one end of the fourth differential drive signal line 4224 is electrically connected to the circuit board 300 and the other end is electrically connected to the second radio frequency electrode of the second electro-absorption modulation region 950 to input a second differential drive modulation signal to the second electro-absorption modulation region 950.

[0410] In some embodiments, the fifth differential drive signal line 4225 and the sixth differential drive signal line 4226 are formed on the surface of the substrate 420 and are electrically connected to the third electro-absorption modulation region 960 respectively to input differential drive modulation signals to the third electro-absorption modulation region 960.

[0411] In some embodiments, one end of the fifth differential drive signal line 4225 is electrically connected to the circuit board 300 and the other end is electrically connected to the first radio frequency electrode of the third electro-absorption modulation region 960 to input a first differential drive modulation signal to the third electro-absorption modulation region 960.

[0412] In some embodiments, one end of the sixth differential drive signal line 4226 is electrically connected to the circuit board 300 and the other end is electrically connected to the second radio frequency electrode of the third electro-absorption modulation region 960 to input a second differential drive modulation signal to the third electro-absorption modulation region 960.

[0413] In some embodiments, the seventh differential drive signal line 4227 and the eighth differential drive signal line 4228 are formed on the surface of the substrate 420 and are electrically connected to the fourth electro-absorption modulation region 970 respectively to input differential drive modulation signals to the fourth electro-absorption modulation region 970.

[0414] In some embodiments, one end of the seventh differential drive signal line 4227 is electrically connected to the circuit board 300 and the other end is electrically connected to the first radio frequency electrode of the fourth electro-absorption modulation region 970 to input a first differential drive modulation signal to the fourth electro-absorption modulation region 970.

[0415] In some embodiments, one end of the eighth differential drive signal line 4228 is electrically connected with the circuit board 300, and the other end is electrically connected with the second radio frequency electrode of the fourth electro-absorption modulation region 970, so as to input a second differential drive modulation signal to the fourth electro-absorption modulation region 970.

[0416] In some embodiments, the first differential drive signal line 4221 and the second differential drive signal line 4222 are located on the first side of the laser chip 900, and the third differential drive signal line 4223 and the fourth differential drive signal line 4224 are located on the first side of the laser chip 900. Compared with the first differential drive signal line 4221 and the second differential drive signal line 4222, the third differential drive signal line 4223 and the fourth differential drive signal line 4224 have a longer wiring length, so as to reasonably deploy the signal lines and avoid conflicts.

[0417] In some embodiments, the fifth differential drive signal line 4225 and the sixth differential drive signal line 4226 are located on the second side of the laser chip 900, and the seventh differential drive signal line 4227 and the eighth differential drive signal line 4228 are located on the second side of the laser chip 900. Similarly, compared with the seventh differential drive signal line 4227 and the eighth differential drive signal line 4228, the fifth differential drive signal line 4225 and the sixth differential drive signal line 4226 have a longer wiring length, so as to reasonably deploy the signal lines and avoid conflicts.

[0418] In some embodiments, the first bias electrode 918 and the second bias electrode 919 are formed on the surface of the laser chip 900. One end of the first bias electrode 918 is electrically connected with the circuit board 300, and the other end is electrically connected with the P-type electrode 916. One end of the second bias electrode 919 is electrically connected with the circuit board 300, and the other end is electrically connected with the N-type electrode 917, so as to input a bias current to the light-emitting region 910.

[0419] In some embodiments, the substrate 420 has a first bias pad 4271 and a second bias pad 4272 on the surface. One end of the first bias pad 4271 is electrically connected with the circuit board 300, and the other end is wire-bonded with the first bias electrode 918 to realize electrical connection. One end of the second bias pad 4272 is electrically connected with the circuit board 300, and the other end is wire-bonded with the second bias electrode 919 to realize electrical connection.

[0420] Figure 25 A surface structure of a laser assembly according to some embodiments Figure 24 As shown in Figure 25 In some embodiments, the substrate 420 has four differential drive signal lines corresponding to the four electro-absorption modulation regions on the surface.

[0421] In some embodiments, the first DC electrode 9473 is electrically connected to the first RF electrode 9471 through a first connection resistor 9491, taking the first electrical absorption modulation region 940 as an example. The first RF electrode 9471 is electrically connected to the first electrode part 945, so as to realize the electrical connection between the first DC electrode 9473 and the first electrode part 945. The first connection resistor 9491 can be an on-chip integrated resistor.

[0422] In some embodiments, the second DC electrode 9474 is electrically connected to the second RF electrode 9472 through a second connection resistor 9492. The second RF electrode 9472 is electrically connected to the second electrode part 946, so as to realize the electrical connection between the second DC electrode 9474 and the second electrode part 946.

[0423] In some embodiments, the substrate 420 is formed with a fifth signal pad 4241 and a sixth signal pad 4243 adjacent to the surface of the laser chip 900. The fifth signal pad 4241 and the sixth signal pad 4243 are respectively located on the side of the first differential driving signal line 4221 and the second differential driving signal line 4222.

[0424] In some embodiments, the substrate 420 is formed with a seventh signal pad 4242 and an eighth signal pad 4244 adjacent to the surface of the circuit board 300.

[0425] In some embodiments, the fifth signal pad 4241 and the seventh signal pad 4242 are connected by a first differential bias signal line 4251. The fifth signal pad 4241 is used for electrical connection with the first DC electrode 9473, and the seventh signal pad 4242 is used for electrical connection with the circuit board 300. One end of the first differential bias signal line 4251 is electrically connected to the circuit board 300, and the other end is wire-connected between the first DC electrode 9473 and the first electrode part 945, so as to input a first differential reverse bias voltage to the first electrical absorption modulation region 940.

[0426] In some embodiments, the sixth signal pad 4243 and the eighth signal pad 4244 are connected by a second differential bias signal line 4252. The sixth signal pad 4243 is used for electrical connection with the second DC electrode 9474, and the eighth signal pad 4244 is used for electrical connection with the circuit board 300. One end of the second differential bias signal line 4252 is electrically connected to the circuit board 300, and the other end is wire-connected between the second DC electrode 9474 and the second electrode part 946, so as to input a second differential reverse bias voltage to the first electrical absorption modulation region 940.

[0427] In some embodiments, the first differential bias signal line 4251 and the second differential bias signal line 4252 are respectively arranged inside the substrate 420 to avoid mutual crosstalk between the differential drive signal and the differential reverse bias electrode, and to reserve more space for arranging the differential drive signal lines on the surface of the substrate 420, so that the first differential drive signal lines and the second differential drive signal lines corresponding to multiple electro-absorption modulation regions are distributed on the surface of the substrate 420, the spatial layout is optimized, and the signal transmission quality is ensured.

[0428] In some embodiments, the fifth signal pad 4241 is provided with a metal via to the inside of the substrate 420, and then connected to the seventh signal pad 4242 through internal wiring of the substrate 420, so as to embed the first differential bias signal line 4251 inside the substrate 420. In some embodiments, the sixth signal pad 4243 is provided with a metal via to the inside of the substrate 420, and then connected to the eighth signal pad 4244 through internal wiring of the substrate 420, so as to embed the second differential bias signal line 4252 inside the substrate 420.

[0429] In some embodiments, with reference to the first electro-absorption modulation region 940, the third differential bias signal line 4253 and the fourth differential bias signal line 4254 are formed inside the substrate 420 to input the differential reverse bias voltage to the second electro-absorption modulation region 950.

[0430] In some embodiments, with reference to the first electro-absorption modulation region 940, the fifth differential bias signal line 4255 and the sixth differential bias signal line 4256 are formed inside the substrate 420 to input the differential reverse bias voltage to the third electro-absorption modulation region 960.

[0431] In some embodiments, with reference to the first electro-absorption modulation region 940, the seventh differential bias signal line 4257 and the eighth differential bias signal line 4258 are formed inside the substrate 420 to input the differential reverse bias voltage to the fourth electro-absorption modulation region 970.

[0432] Figure 25 A schematic diagram of a capacitor according to some embodiments, Figure 26 A schematic diagram of a laser chip circuit according to some embodiments. As Figure 26 and Figure 27 shown, in some embodiments, an integrated capacitor design is used, which can directly add a coupling capacitor at the output end of the electro-absorption modulation region to achieve DC isolation and matching filtering.

[0433] In some embodiments, taking the first electroabsorption modulation region 940 as an example, the surface of the substrate 420 near the laser chip 900 is provided with a sixth signal pad 4243, a second signal pad 4232, a first signal pad 4231 and a fifth signal pad 4241, which are respectively electrically connected to the second DC electrode 9474, the second RF electrode 9472, the first RF electrode 9471 and the first DC electrode 9473.

[0434] In some embodiments, a coupling capacitor 426 is connected in series between the sixth signal pad 4243 and the fifth signal pad 4241 to achieve effective isolation between the DC positive and negative terminals. The coupling capacitor 426 has the characteristic of passing AC and blocking DC. The coupling capacitor 426 can achieve DC isolation and matched filtering.

[0435] In some embodiments, the coupling capacitor 426 is disposed in the inner layer of the substrate 420. The sixth signal pad 4243 and the fifth signal pad 4241 respectively drill metal vias into the inner layer of the substrate 420, thereby connecting the coupling capacitor 426 in series between them.

[0436] like Figure 1 As shown, in some embodiments, capacitor C4 in the circuit diagram is coupling capacitor 426. Black dot 1 in the circuit diagram represents the signal access point of the second DC electrode 9474, and black dot 4 represents the signal access point of the first DC electrode 9473. Black dot 2 represents the signal access point of the second RF electrode 9472, and black dot 3 represents the signal access point of the first RF electrode 9471.

[0437] In some embodiments, a first differential reverse bias voltage signal is applied at the signal access point of the first DC electrode 9473. This signal is split into components DC1+ and DC2+ at this access point. Component DC1+ flows into the first electrode section via wire L5 and resistor R6. Wire L5 is the connection between the fifth signal pad 4241 and the first DC electrode 9473, and resistor R6 is the first connection resistor 9491 between the first DC electrode 9473 and the first RF electrode 9471. Component DC2+ flows upward into the coupling capacitor 426, where it is open-circuited, thus achieving DC isolation.

[0438] In some embodiments, a second differential reverse bias voltage signal is applied at the signal access point of the second DC electrode 9474. This second differential reverse bias voltage signal is split into components DC1- and DC2- at this access point. Component DC1- flows into the second electrode section via wire L6 and resistor R7. Wire L6 is the connection between the sixth signal pad 4243 and the second DC electrode 9474, and resistor R7 is the second connection resistor 9492 between the second DC electrode 9474 and the second RF electrode 9472. Component DC2- flows downwards into the coupling capacitor 426, where it is open-circuited, thus achieving DC isolation.

[0439] In some embodiments, a second differential modulation drive signal is connected at the signal access point of the second radio frequency electrode 9472. The second differential modulation drive signal is split into components RF1- and RF2-. RF1- flows downward into the second electrode portion 946, and RF2- flows to the right into the coupling capacitor 426.

[0440] In some embodiments, a first differential drive modulation signal is introduced at the signal access point of the first RF electrode 9471. The first differential drive modulation signal is also split into components RF1+ and RF2+, where RF1+ flows upward into the first electrode portion 945, and RF2+ flows to the right into the coupling capacitor 426. The component RF2- of the second differential modulation drive signal and the component RF2+ of the first differential modulation drive signal merge within the coupling capacitor 426, canceling each other out, thereby achieving filtering and improving the chip's noise immunity.

[0441] In some embodiments, the laser chip 900 can be a single-channel laser chip or an array-emitting laser chip. The following embodiments use a single-channel laser chip 900 as an example for illustrative purposes.

[0442] Figure 27 This is a schematic diagram of the structure of a laser chip according to some embodiments. Figure 28 As shown, in some embodiments, the laser chip 900 can be an EML laser chip.

[0443] In some embodiments, the laser chip 900 may include a light-emitting region 910. The light-emitting region 910 is configured to emit light that does not carry a signal.

[0444] In some embodiments, the laser chip 900 may include an electro-absorption modulation region 920. The electro-absorption modulation region 920 is configured to modulate the light emitted from the light-emitting region 910 to generate an optical signal.

[0445] In some embodiments, the light-emitting region 910 and the electro-absorption modulation region 920 are arranged along the light field transmission direction.

[0446] Figure 2 A laser chip structure according to some embodiments Figure 29 .like Figure 3 As shown, in some embodiments, the laser chip 900 includes a substrate 930a. A light-emitting region 910 and an electro-absorption modulation region 920 are respectively disposed on the surface of the substrate 930a. The light-emitting region 910 and the electro-absorption modulation region 920 are laterally aligned. The electro-absorption modulation region 920 is located in the direction of the emitted light field of the light-emitting region 910.

[0447] In some embodiments, the light emitting region 910 emits light without carrying a signal, the electro-absorption modulation region 920 modulates the light emitted by the light emitting region 910 to generate a light signal, and the laser chip 900 outputs the light signal.

[0448] In some embodiments, the light emitting region 910 is provided with a bias current, and the light emitting region 910 emits light under the action of the bias current.

[0449] In some embodiments, the light emitting region 910 can include a first N-InP layer 911a. The first N-InP layer 911a is located above the substrate 930a. The first N-InP layer 911a is an N-doped InP layer. The first N-InP layer 911a mainly outputs N-type carriers.

[0450] In some embodiments, the light emitting region 910 can include a first quantum well layer 912. The first quantum well layer 912 is located above the first N-InP layer 911a. The first quantum well layer 912 is an active region of the light emitting region 910. The first quantum well layer 912 is configured to recombine P-type carriers and N-type carriers to generate photons. The N-type carriers are derived from the first N-InP layer 911a.

[0451] In some embodiments, the light emitting region 910 can include a grating layer 913. The grating layer 913 is located above the first quantum well layer 912.

[0452] In some embodiments, the light emitting region 910 can include a P-InP layer 940a. The P-InP layer 940a is located above the grating layer 913. The P-InP layer 940a is a P-doped InP layer. The P-InP layer 940a mainly outputs P-type carriers. The P-InP layer 940a inputs P-type carriers to the first quantum well layer 912.

[0453] In some embodiments, within the first quantum well layer 912, stimulated radiation causes discrete P-type carriers and N-type carriers to recombine to generate photons, thereby converting injected carriers into photons. The photons are reflected by the resonant cavity or the distributed feedback grating to form positive feedback, resulting in laser emission. By changing the current injected into the grating layer 913, the effective refractive index of the grating layer 913 can be changed, thereby changing the laser resonant lasing wavelength to achieve output of a specific wavelength. The light output from the first quantum well layer 912 does not carry a signal.

[0454] In some embodiments, the first N-InP layer 911a has a large size to support the first quantum well layer 912, the grating layer 913, and the P-InP layer.

[0455] In some embodiments, the reverse bias voltage and the modulating current signal are provided to the electro-absorption modulation region 920. Under the action of the reverse bias voltage, the intensity of the light emitted by the light emitting region 910 varies with the change of the modulating current signal, so that the intensity is modulated, intensity modulation is achieved, and an optical signal carrying information is generated.

[0456] In some embodiments, the electro-absorption modulation region 920 can include a second N-InP layer 921. The second N-InP layer 921 is located above the substrate 930a. The second N-InP layer 921 is an N-doped InP layer. The second N-InP layer 921 mainly outputs N-type carriers.

[0457] In some embodiments, the electro-absorption modulation region 920 can include a second quantum well layer 922. The second quantum well layer 922 is located above the second N-InP layer 921. The second quantum well layer 922 is the active region of the electro-absorption modulation region 920.

[0458] In some embodiments, the electro-absorption modulation region 920 can include a P-InP layer 940a. The P-InP layer 940a is located above the second quantum well layer 922. The P-InP layer 940a is a P-doped InP layer. The P-InP layer 940a mainly outputs P-type carriers. The P-InP layer 940a inputs P-type carriers to the second quantum well layer 922, and the second N-InP layer 921 inputs N-type carriers to the second quantum well layer 922, thereby inputting signals to the electro-absorption modulation region 920.

[0459] In some embodiments, the light emitting region 910 and the electro-absorption modulation region 920 share the P-InP layer 940a. That is, the P-InP layer 940a covers the corresponding regions of the light emitting region 910 and the electro-absorption modulation region 920. The P-InP layer 940a extends from the corresponding region of the light emitting region 910 to the corresponding region of the electro-absorption modulation region 920. The P-InP layer 940a extends from the surface of the grating layer 913 to the surface of the second quantum well layer 922. In some embodiments, the light emitting region 910 and the electro-absorption modulation region 920 can not share the P-InP layer 940a, which is not limited.

[0460] In some embodiments, the second N-InP layer 921 is large in size to support the second quantum well layer 922 and the P-InP layer 940a.

[0461] In some embodiments, the electro-absorption modulation region 920 can include a first electrode part 923. Exemplarily, the first electrode part 923 is a P-type electrode.

[0462] In some embodiments, the electro-absorption modulation region 920 can include a second electrode part 924. Exemplarily, the second electrode part 924 is an N-type electrode. The second electrode part 924 and the first electrode part 923 are coplanar electrodes, and are respectively located on the upper surface of the substrate 420.

[0463] In some embodiments, the first electrode part 923 is located on the surface of the P-InP layer 940a corresponding to the electro-absorption modulation region 920, and the second electrode part 924 is located on the surface of the second N-InP layer 921. The width of the second N-InP layer 921 is greater than the width of the second N-InP layer 921, or the width of the second N-InP layer 921 is greater than the width of the second quantum well layer 922, or the width of the second N-InP layer 921 is greater than the width of the P-InP layer 940a, leaving a space for the second electrode part 924.

[0464] In some embodiments, a reverse bias voltage and a driving modulation signal are provided to the electro-absorption modulation region 920. When the electro-absorption modulation region 920 is working, based on the electro-optic modulation effect of the second quantum well layer 922, the light entering the second quantum well layer 922 is modulated by the driving modulation signal to generate an optical signal carrying information.

[0465] In some embodiments, as the integration level of the optical module is improved, it is necessary to further reduce the power consumption of the laser chip 900 to meet the overall power consumption requirement. Among them, the laser chip 900 adopts a differential driving mode to effectively reduce the power consumption. The differential driving modulation signal enters the electro-absorption modulation region 920 respectively, and the two differential signals have the same amplitude and frequency, but the phases are opposite. Compared with single-ended driving chips, differential driving has the advantages of stronger anti-noise interference ability, longer transmission distance, lower power consumption, etc.

[0466] In some embodiments, when the light-emitting region 910 and the electro-absorption modulation region 920 share the N-InP layer, the driving modulation signal accessed from the N-InP layer to the electro-absorption modulation region will be disturbed by the light-emitting region 910, and it is difficult to perform differential driving.

[0467] In some embodiments, the laser chip 900 can include an electrical isolation region 951. The electrical isolation region 951 is located between the first N-InP layer 911a and the second N-InP layer 921, and then the electrical isolation region 951 performs N-face electrical isolation processing on the light-emitting region 910 and the electro-absorption modulation region 920.

[0468] In some embodiments, the electrically isolated region 951 is a high-resistivity region, preventing charge carriers from entering the other party's working region through the electrically isolated region 951. This avoids interference from the light-emitting region 910 on the driving modulation signal accessed from the second N-InP layer 921, thus ensuring the quality of the modulation signal. At the same time, it also avoids interference from the electrically absorbed modulation region 920 on the bias current signal accessed from the first N-InP layer 911a, thus ensuring the light output quality of the light-emitting region 910.

[0469] In some embodiments, the electrical isolation region 951 can be achieved by means of ion implantation or diffusion, which transforms the N-type semiconductor region between the first N-InP layer 911a and the second N-InP layer 921 into a high-resistivity region, thereby achieving electrical isolation.

[0470] In some embodiments, the laser chip 900 may include a connecting waveguide region 952. The connecting waveguide region 952 is located between the first quantum well layer 912 and the second quantum well layer 922. The connecting waveguide region 952 connects the first quantum well layer 912 and the second quantum well layer 922. Light output from the first quantum well layer 912 is transmitted through the connecting waveguide region 952 to the second quantum well layer 922 for signal modulation.

[0471] In some embodiments, ion implantation is performed downwards at the interface between the first quantum well layer 912 and the second quantum well layer 922. The ion implantation region is bombarded by the ion beam, forming deep-level defects and reducing conductivity, thus forming an electrically isolated region 951. The electrically isolated region 951 is a high-resistivity region, preventing charge carriers from entering the other party's working region through the electrically isolated region 951, thereby avoiding interference from the other party.

[0472] In some embodiments, after obtaining the electrically isolated region 951, an electrically isolated region of a predetermined thickness is etched to form a connecting waveguide region 952 on the surface of the electrically isolated region. The connecting waveguide region 952 is located between the first quantum well layer 912 and the second quantum well layer 922, and the connecting waveguide region 952 establishes an optical connection between the first quantum well layer 912 and the second quantum well layer 922. Exemplarily, the etching predetermined thickness should ensure that the thickness of the connecting waveguide region 952 matches the thickness of the first quantum well layer 912 and the second quantum well layer 922.

[0473] Figure 30 A laser chip structure according to some embodiments Figure 30 .like Figure 31 As shown, in some embodiments, the laser chip 900 includes a substrate 930a. A light-emitting region 910 and an electro-absorption modulation region 920 are respectively disposed on the surface of the substrate 930a.

[0474] In some embodiments, the laser chip 900 employs a differential drive mode to effectively reduce power consumption.

[0475] In some embodiments, the electroabsorption modulation region 920 can include a first radio frequency electrode 925. The first radio frequency electrode 925 is electrically connected with the first electrode part 923 to input a first differential driving modulation signal to the electroabsorption modulation region 920.

[0476] In some embodiments, the electroabsorption modulation region 920 can include a first direct current electrode 926. The first direct current electrode 926 is electrically connected with the first electrode part 923 to input a first differential reverse bias voltage to the electroabsorption modulation region 920.

[0477] In some embodiments, the electroabsorption modulation region 920 can include a second radio frequency electrode 927. The first radio frequency electrode 925 and the second radio frequency electrode 927 constitute a differential driving electrode. The second radio frequency electrode 927 is electrically connected with the second electrode part 924 to input a second differential driving modulation signal to the electroabsorption modulation region 920.

[0478] In some embodiments, the electroabsorption modulation region 920 can include a second direct current electrode 928. The first direct current electrode 926 and the second direct current electrode 928 constitute a differential reverse bias electrode. The second direct current electrode 928 is electrically connected with the second electrode part 924 to input a second differential reverse bias voltage to the electroabsorption modulation region 920.

[0479] In some embodiments, the first radio frequency electrode 925 and the first direct current electrode 926 are respectively located on two sides of the second N-InP layer 921. The second radio frequency electrode 927 and the second direct current electrode 928 are respectively located on two sides of the first N-InP layer 911a.

[0480] In some embodiments, the first radio frequency electrode 925, the first direct current electrode 926, the second radio frequency electrode 927 and the second direct current electrode 928 are respectively insulatedly connected with the substrate 930a.

[0481] In some embodiments, the surface of the substrate 930a is respectively formed with a first support part 931, a second support part 932, a third support part 933 and a fourth support part 934. The first support part 931, the second support part 932, the third support part 933 and the fourth support part 934 can respectively be mesa structures composed of SiO2 and have a certain thickness.

[0482] In some embodiments, the first support part 931 and the second support part 932 are respectively located on two sides of the first N-InP layer 911a. The third support part 933 and the fourth support part 934 are respectively located on two sides of the second N-InP layer 921.

[0483] In some embodiments, the first support portion 931 carries a first radio frequency electrode 925 on a surface thereof. The first radio frequency electrode 925 can be a circular electrode supported by the first support portion 931 to achieve an insulated connection with the substrate 930a. The first support portion 931 can achieve insulation between the first radio frequency electrode 925 and the substrate 930a.

[0484] In some embodiments, the second support portion 932 carries a first direct current electrode 926 on a surface thereof. The first direct current electrode 926 can be a circular electrode supported by the second support portion 932 to achieve an insulated connection with the substrate 930a. The second support portion 932 can achieve insulation between the first direct current electrode 926 and the substrate 930a.

[0485] In some embodiments, the third support portion 933 carries a second radio frequency electrode 927 on a surface thereof. The second radio frequency electrode 927 can be a circular electrode supported by the third support portion 933 to achieve an insulated connection with the substrate 930a. The third support portion 933 can achieve insulation between the second radio frequency electrode 927 and the substrate 930a.

[0486] In some embodiments, the fourth support portion 934 carries a second direct current electrode 928 on a surface thereof. The second direct current electrode 928 can be a circular electrode supported by the fourth support portion 934 to achieve an insulated connection with the substrate 930a. The fourth support portion 934 can achieve insulation between the second direct current electrode 928 and the substrate 930a.

[0487] In some embodiments, the first support portion 931 and the second support portion 932 are respectively located on two sides of the second N-InP layer 921. The third support portion 933 and the fourth support portion 934 are respectively located on two sides of the first N-InP layer 911a.

[0488] In some embodiments, the first radio frequency electrode 925 is electrically connected with the first electrode portion 923 to input a first differential driving modulation signal to the electroabsorption modulation region 920; the second radio frequency electrode 927 is electrically connected with the second electrode portion 924 to input a second differential driving modulation signal to the electroabsorption modulation region 920. The first differential driving modulation signal and the second differential driving modulation signal have the same amplitude and frequency, and opposite phases.

[0489] In some embodiments, the first direct current electrode 926 is electrically connected with the first electrode portion 923 to input a first differential reverse bias voltage to the electroabsorption modulation region 920; the second direct current electrode 928 is electrically connected with the second electrode portion 924 to input a second differential reverse bias voltage to the electroabsorption modulation region 920. Similarly, the first differential reverse bias voltage and the second differential reverse bias voltage have the same amplitude and frequency, and opposite phases.

[0490] In some embodiments, when the electro-absorption modulation region 920 is working, the first electrode part 923 and the second electrode part 924 simultaneously apply first and second differential driving modulation signals with opposite phases, forming a differential driving mode. Through the electro-optical modulation effect of the second quantum well layer 922, the light entering the second quantum well layer 922 is modulated by the differential driving modulation signals, generating an optical signal carrying information. The use of the coplanar electrode differential driving mode for signal modulation reduces power consumption.

[0491] In some embodiments, the substrate 420 carries the laser chip 900. The surface of the substrate 420 is paved with a circuit pattern for establishing electrical connections with the circuit board 300 and the laser chip 900 respectively, thereby transmitting signals to the laser chip 900.

[0492] In some embodiments, the surface of the circuit board 300 is provided with a bias current source. The bias current source is electrically connected to the substrate 420, and the substrate 420 is electrically connected to the laser chip 900, thereby inputting a bias current into the light-emitting region 910 of the laser chip 900, and the light-emitting region 910 emits light.

[0493] In some embodiments, the surface of the circuit board 300 is provided with a bias circuit. The bias circuit has a first differential output end and a second differential output end. The first differential output end of the bias circuit is electrically connected to the substrate 420, and the first direct current electrode 926 is electrically connected to the substrate 420, so that the first differential output end of the bias circuit is electrically connected to the first direct current electrode 926, thereby transmitting the first differential reverse bias voltage output by the bias circuit into the first direct current electrode 926. Then input into the electro-absorption modulation region 920 through the first electrode part 923.

[0494] In some embodiments, the second differential output end of the bias circuit is electrically connected to the substrate 420, and the second direct current electrode 928 is electrically connected to the substrate 420, so that the second differential output end of the bias circuit is electrically connected to the second direct current electrode 928, thereby transmitting the second differential reverse bias voltage output by the bias circuit into the second direct current electrode 928. Then input into the electro-absorption modulation region 920 through the second electrode part 924.

[0495] In some embodiments, the surface of the circuit board 300 is provided with a driving chip. The driving chip has a first differential output end and a second differential output end. The first differential output end of the driving chip is electrically connected to the substrate 420, and the first radio frequency electrode 925 is electrically connected to the substrate 420, so that the first differential output end of the driving chip is electrically connected to the first radio frequency electrode 925, thereby transmitting the first differential driving modulation signal output by the driving chip into the first radio frequency electrode 925. Then input into the electro-absorption modulation region 920 through the first electrode part 923.

[0496] In some embodiments, the second differential output terminal of the driver chip is electrically connected to the substrate 420, and the second radio frequency electrode 962 is electrically connected to the substrate 420. The second differential output terminal of the driver chip is then electrically connected to the second radio frequency electrode 962, thereby transmitting the second differential drive modulation signal output by the driver chip to the second radio frequency electrode 962. The signal is then input to the electroabsorption modulation region 920 via the second electrode portion 924.

[0497] Figure 31 A laser chip structure according to some embodiments Figure 12 .like Figure 12 As shown, in some embodiments, the laser chip 900 includes a substrate 930a. A light-emitting region 910 and an electro-absorption modulation region 920 are respectively disposed on the surface of the substrate 930a.

[0498] In some embodiments, the first radio frequency electrode 925 and the first DC electrode 926 are electrically connected to the first electrode portion 923, so as to transmit the first differential drive modulation signal and the first reverse bias voltage signal to the electroabsorption modulation region 920 via the first electrode portion 923, respectively.

[0499] In some embodiments, the second radio frequency electrode 927 and the second DC electrode 928 are electrically connected to the second electrode portion 924, so as to transmit the second differential drive modulation signal and the second reverse bias voltage signal to the electroabsorption modulation region 920 via the second electrode portion 924, respectively.

[0500] In some embodiments, the first electrode portion 923 and the second electrode portion 924 are coplanar electrodes, both of which are disposed facing the upper surface of the substrate 420.

[0501] In some embodiments, the first radio frequency electrode 925, the first DC electrode 926, the second radio frequency electrode 927, and the second DC electrode 928 are respectively disposed facing the upper surface of the substrate 420.

[0502] In some embodiments, the first support portion 931 and the second support portion 932 are respectively located on both sides of the second N-InP layer 921. The third support portion 933 and the fourth support portion 934 are respectively located on both sides of the first N-InP layer 911a. Then, the first radio frequency electrode 925 and the first DC electrode 926 are respectively located on both sides of the second N-InP layer 921, and the second radio frequency electrode 927 and the second DC electrode 928 are respectively located on both sides of the first N-InP layer 911a.

[0503] In some embodiments, the first electrode portion 923 is located above the second N-InP layer 921, and the first radio frequency electrode 925 and the first DC electrode 926 are located on both sides of the first electrode portion 923.

[0504] In some embodiments, the first support part 931 and the third support part 933 are located on one side of the P-InP layer 940a, and the first radio frequency electrode 925 and the second radio frequency electrode 927 are respectively located on one side of the P-InP layer 940a, so that the differential modulation driving signals are accessed from the substrate 420 carrying the laser chip at the same distance, and the parasitic inductance and capacitance are reduced.

[0505] In some embodiments, the second support part 932 and the fourth support part 934 are located on the other side of the P-InP layer 940a, and the first direct current electrode 926 and the second direct current electrode 928 are respectively located on the other side of the P-InP layer 940a, away from the first radio frequency electrode 925 and the second radio frequency electrode 927, thereby reducing the parasitic capacitance. At the same time, the direct current signals on the substrate 420 carrying the laser chip can be accessed to the first direct current electrode 926 and the second direct current electrode 928 from the other side of the laser chip, without sharing the first radio frequency electrode 925 or the second radio frequency electrode 927, reducing the difficulty of wire bonding, and providing flexibility for the arrangement of the substrate 420.

[0506] In some embodiments, the second radio frequency electrode 927 and the second electrode part 924 are located on both sides of the P-InP layer 940a, and the second direct current electrode 928 and the second electrode part 924 are located on the same side of the P-InP layer 940a.

[0507] In some embodiments, the second electrode part 924 is located on the surface of the second N-InP layer 921, and the second radio frequency electrode 927 and the second direct current electrode 928 are respectively located on both sides of the first N-InP layer 911a, and the second radio frequency electrode 927 is located on the diagonal side of the second electrode part 924, and the second direct current electrode 928 is located on the straight side of the second electrode part 924.

[0508] In some embodiments, the first radio frequency electrode 925 and the first direct current electrode 926 are respectively electrically connected with the first electrode part 923. Since the first radio frequency electrode 925 and the first direct current electrode 926 are respectively located on both sides of the first electrode part 923, a first electrical connection bridge 971 can be connected between the first radio frequency electrode 925 and the first direct current electrode 926. One end of the first electrical connection bridge 971 is electrically connected with the first radio frequency electrode 925, and the other end is electrically connected with the first direct current electrode 926. The first electrical connection bridge 971 is electrically connected with the first electrode part 923, so that the first radio frequency electrode 925, the first direct current electrode 926 and the first electrode part 923 are respectively electrically connected. The first support part 931 and the second support part 932 act as piers to support the first electrical connection bridge 971.

[0509] In some embodiments, the second radio frequency electrode 927 and the second electrode portion 924 are electrically connected with the second DC electrode 928, respectively. Since the second radio frequency electrode 927 and the second electrode portion 924 are located on two sides of the P-InP layer 940a, and the second DC electrode 928 and the second electrode portion 924 are located on the same side of the P-InP layer 940a, the electrical connection between the second radio frequency electrode 927 and the second electrode portion 924 needs to be relayed. To this end, the fourth support portion 934 is provided with a relay electrode portion 9341, which is electrically connected with the second DC electrode 928 located on the fourth support portion 934.

[0510] In some embodiments, the second electrode portion 924 and the relay electrode portion 9341 are connected with a second electrical connection bridge 972, and the relay electrode portion 9341 is electrically connected with the second DC electrode 928, thereby establishing an electrical connection between the second DC electrode 928 and the second electrode portion 924 and realizing the electrical connection therebetween. The second N-InP layer 921 and the fourth support portion 934 act as piers to support the second electrical connection bridge 972.

[0511] In some embodiments, the second electrode portion 924 and the relay electrode portion 9341 are connected with a second electrical connection bridge 972, and the relay electrode portion 9341 is electrically connected with the second radio frequency electrode 927, thereby establishing an electrical connection between the second radio frequency electrode 927 and the second electrode portion 924 and realizing the electrical connection therebetween. The third support portion 933 and the fourth support portion 934 act as piers to support the third electrical connection bridge 973.

[0512] In some embodiments, the first electrical connection bridge 971 spans the electrical absorption modulation region 920 and has a relatively long length. A P-type ohmic contact layer 929 is provided between the first electrode portion 923 and the P-InP layer to support the first electrical connection bridge 971 and reduce the risk of collapse caused by the relatively long length of the first electrical connection bridge 971.

[0513] In some embodiments, the third electrical connection bridge 973 spans the light-emitting region 920 and also has a relatively long length. The third electrical connection bridge 973 stays above the waveguide of the light-emitting region 920 and is isolated and supported by the thick dielectric support portion 974, thereby reducing the risk of collapse caused by the excessive length of the third electrical connection bridge 973.

[0514] In some embodiments, the first electrical connection bridge 971, the second electrical connection bridge 972, and the third electrical connection bridge 973 can be air bridges. An air bridge uses air with a relatively small dielectric constant as a dielectric to reduce parasitic capacitance. Since air has a relatively low dielectric constant, the transmission speed of signals in an air bridge is relatively fast, and the loss is relatively small. The structural design of an air bridge can optimize the transmission path of signals, reduce signal reflection and scattering in the transmission process, and thereby improve the transmission efficiency and quality of signals.

[0515] In some embodiments, the impedance of the electro-absorption modulation region 920 is greater than the impedance of the differential signal transmission line on the surface of the substrate 420. In order to achieve impedance matching between the electro-absorption modulation region 920 and the differential signal transmission line, the electro-absorption modulation region 920 is connected in parallel with a matching resistor to reduce the impedance of the electro-absorption modulation region 920, thereby achieving impedance matching. Exemplarily, the matching resistor has a preset impedance, such as 50 ohms or the like.

[0516] In some embodiments, the matching resistor can be disposed on the surface of the substrate 420 and connected in parallel with the electro-absorption modulation region 920.

[0517] In some embodiments, the matching resistor can be integrated on the surface of the laser chip 900. The first matching resistor 981a and the second matching resistor 982a are respectively formed on the surfaces of the second support portion 932 and the fourth support portion 934, achieving on-chip integration of the matching resistor, without the need to dispose the matching resistor on the surface of the substrate 420, thereby reducing the size of the substrate.

[0518] In some embodiments, the first matching resistor 981a is connected in parallel with the electro-absorption modulation region 920, and the second matching resistor 982a is connected in parallel with the electro-absorption modulation region 920, to reduce the impedance of the electro-absorption modulation region 920 and achieve impedance matching between the electro-absorption modulation region 920 and the differential signal transmission line on the surface of the substrate 420.

[0519] Based on the laser chip provided in the above embodiments, the present disclosure provides a preparation method of a laser chip. Figure 12 A flowchart of a preparation method of a laser chip according to some embodiments is shown in FIG. 10. The present disclosure provides a preparation method of a laser chip, which includes: Figure 12 as shown in FIG. 10. The present disclosure provides a preparation method of a laser chip, which includes:

[0520] S100: growing an N-InP layer along the surface of a substrate, and growing a first quantum well layer and a second quantum well layer in abutment along the surface of the N-InP layer, the surface of the first quantum well layer being formed with a grating layer.

[0521] In some embodiments, the N-InP layer is grown along the surface of a substrate, and the first quantum well layer 912 and the second quantum well layer 922 are grown in abutment along the surface of the N-InP layer 911, the surface of the first quantum well layer 912 being formed with a grating layer 913. The first quantum well layer 912 and the second quantum well layer 922 are respectively the active region of the light emitting region 910 and the electro-absorption modulation region 920. The light emission of the light emitting region 910 occurs in the first quantum well layer 912, and the signal modulation of the electro-absorption modulation region 920 occurs in the second quantum well layer 922.

[0522] In some embodiments, when the light emitting region 910 shares the N-InP layer with the electro-absorption modulation region 920, the driving modulation signal from the N-InP layer to the electro-absorption modulation region 920 is interfered by the light emitting region 910, and it is difficult to perform differential driving.

[0523] In some embodiments, the laser chip 900 can include an electrical isolation region 951. The electrical isolation region 951 is located between the first N-InP layer 911a and the second N-InP layer 921, and the electrical isolation region 951 performs N-face electrical isolation processing on the light emitting region 910 and the electro-absorption modulation region 920.

[0524] In some embodiments, the electrical isolation region 951 can be realized by ion implantation or diffusion, etc. The N-type semiconductor region between the first N-InP layer 911a and the second N-InP layer 921 is changed to a high resistance region, thereby realizing the electrical isolation effect.

[0525] In some embodiments, the laser chip 900 can include a connecting waveguide region 952. The connecting waveguide region 952 is located between the first quantum well layer 912 and the second quantum well layer 922. The connecting waveguide region 952 connects the first quantum well layer 912 and the second quantum well layer 922. The light output from the first quantum well layer 912 is transmitted to the second quantum well layer 922 through the connecting waveguide region 952, and is ready for signal modulation.

[0526] In some embodiments, the first quantum well layer 912 and the second quantum well layer 922 are ion implanted downward at the interface. The ion implantation region is bombarded by an ion beam, forming a deep level defect, reducing the conductivity, and forming an electrical isolation region 951. The electrical isolation region 951 is a high resistance region, and the carriers cannot pass through the electrical isolation region 951 into the working region of the other party, thereby avoiding interference from the other party.

[0527] In some embodiments, after obtaining the electrical isolation region 951, a preset thickness of the electrical isolation region is etched to form a connecting waveguide region 952 on the surface of the electrical isolation region. The connecting waveguide region 952 is located between the first quantum well layer 912 and the second quantum well layer 922, and the connecting waveguide region 952 establishes optical connection between the first quantum well layer 912 and the second quantum well layer 922. Exemplarily, the etching of the preset thickness should ensure that the thickness of the connecting waveguide region 952 can match the thickness of the first quantum well layer 912 and the second quantum well layer 922.

[0528] S200: growing a P-InP layer along the surface of the grating layer and the second quantum well layer.

[0529] In some embodiments, a P-InP layer 940a is grown along the surface of the grating layer 913 and the second quantum well layer 922. The P-InP layer 940a can cover the corresponding regions of the light emitting region 910 and the electro-absorption modulation region 920.

[0530] S300: A first support portion, a second support portion, a third support portion and a fourth support portion are respectively formed by surface deposition on the substrate. The first support portion and the third support portion are located on one side of the P-InP layer, and the second support portion and the fourth support portion are located on the other side of the P-InP layer.

[0531] In some embodiments, the electroabsorption modulation region 920 can include a first radio frequency electrode 925, a first direct current electrode 926, a second radio frequency electrode 927 and a second direct current electrode 928 for differential driving.

[0532] In some embodiments, a first support portion 931, a second support portion 932, a third support portion 933 and a fourth support portion 934 are respectively formed by surface deposition on the substrate 930a to respectively carry the first radio frequency electrode 925, the first direct current electrode 926, the second radio frequency electrode 927 and the second direct current electrode 928.

[0533] S400: A first radio frequency electrode is formed by surface deposition on the first support portion, and a second radio frequency electrode is formed by surface deposition on the third support portion; a first direct current electrode is formed by surface deposition on the second support portion, and a second direct current electrode is formed by surface deposition on the fourth support portion.

[0534] In some embodiments, the first radio frequency electrode 925 is formed by surface deposition on the first support portion 931, the second radio frequency electrode 927 is formed by surface deposition on the third support portion 933, the first direct current electrode 926 is formed by surface deposition on the second support portion 932, and the second direct current electrode 928 is formed by surface deposition on the fourth support portion 934.

[0535] S500: A second electrode portion is formed by surface deposition on the N-InP layer, and a switching electrode portion is formed by surface deposition on the fourth support portion.

[0536] In some embodiments, the second electrode portion 924 is formed by surface deposition on the N-InP layer 921, and the switching electrode portion 9341 is formed by surface deposition on the fourth support portion 934.

[0537] In some embodiments, the second electrode portion 924 is located on the surface of the second N-InP layer 921.

[0538] S600: A first electrical connection bridge is formed between the first radio frequency electrode and the first direct current electrode, a second electrical connection bridge is formed between the second electrode portion and the switching electrode portion, and a third electrical connection bridge is formed between the switching electrode portion and the second radio frequency electrode.

[0539] S700: A first electrode portion is grown along the surface of the first electrical connection bridge.

[0540] In some embodiments, the first radio frequency electrode 925 and the first direct current electrode 926 are respectively electrically connected with the first electrode part 923. The first radio frequency electrode 925 and the first direct current electrode 926 are respectively located on two sides of the first electrode part 923, and the first radio frequency electrode 925 is connected with the second radio frequency electrode 927 through a first electrical connection bridge 971. One end of the first electrical connection bridge 971 is electrically connected with the first radio frequency electrode 925, and the other end is electrically connected with the second radio frequency electrode 927. The first electrical connection bridge 971 is electrically connected with the first electrode part 923, so that the first radio frequency electrode 925 and the first direct current electrode 926 are respectively electrically connected with the first electrode part 923.

[0541] In some embodiments, the second radio frequency electrode 927 and the second direct current electrode 928 are respectively electrically connected with the second electrode part 924. The second radio frequency electrode 927 is located on two sides of the P-InP layer 940a, and the second direct current electrode 928 is located on the same side of the P-InP layer 940a as the second electrode part 924. Therefore, the electrical connection between the second radio frequency electrode 927 and the second electrode part 924 needs to be relayed. For this purpose, the fourth support part 934 is provided with a relay electrode part 9341, which is electrically connected with the second direct current electrode 928 located on the fourth support part 934.

[0542] In some embodiments, the second electrode part 924 is connected with the relay electrode part 9341 through a second electrical connection bridge 972, and the relay electrode part 9341 is electrically connected with the second direct current electrode 928. Thus, the electrical connection between the second direct current electrode 928 and the second electrode part 924 is established, realizing the electrical connection between them.

[0543] In some embodiments, the second electrode part 924 is connected with the relay electrode part 9341 through a second electrical connection bridge 972, and the relay electrode part 9341 is connected with the second radio frequency electrode 927 through a third electrical connection bridge 973. Thus, the electrical connection between the second radio frequency electrode 927 and the second electrode part 924 is established, realizing the electrical connection between them.

[0544] In some embodiments, the first electrical connection bridge 971, the second electrical connection bridge 972, and the third electrical connection bridge 973 can be air bridges. The air bridge uses air with a small dielectric constant as a dielectric to reduce parasitic capacitance. Because air has a low dielectric constant, the transmission speed of signals in the air bridge is relatively fast, and the loss is small. The structural design of the air bridge can optimize the transmission path of the signal, reduce the reflection and scattering of the signal in the transmission process, and thus improve the transmission efficiency and quality of the signal.

[0545] Figure 12 A first electrical connection bridge preparation process according to some embodiments is shown in the figure. Figure 32As shown, in some embodiments, the preparation of the electrical connection bridge is exemplarily illustrated by taking the preparation of the first electrical connection bridge as an example.

[0546] In some embodiments, the preparation process can include coating photoresist along the region between the P-InP layer and the substrate. This step corresponds to the S181 step in Figure 1 Exemplarily, photoresist is coated along the region between the P-InP layer and the substrate region corresponding to the first support part 931 and the second support part 932.

[0547] In some embodiments, the preparation process can include forming an arc-shaped bridge surface region by photoresist development. This step corresponds to the S182 step and the S183 step in Figure 33

[0548] In some embodiments, the preparation process can include curing the shape of the photoresist into an arc-shaped bridge surface region by high-temperature baking. This step corresponds to the S184 step in Figure 2

[0549] In some embodiments, photoresist is coated along the region between the P-InP layer and the substrate 930a. An arc-shaped bridge surface region is formed by photoresist development. The shape of the photoresist is fixed into an arc-shaped bridge surface region by high-temperature baking. The photoresist is changed into a state that is not easily corroded by the developing solution or the stripping solution by high-temperature curing, and is not affected by subsequent metal lithography.

[0550] In some embodiments, the preparation process can include forming a first radio frequency electrode, a first direct current electrode, and a metal layer between the first radio frequency electrode and the first direct current electrode along the surface of the photoresist by metal lithography and metal deposition, wherein the metal layer connects the first radio frequency electrode and the first direct current electrode. This step corresponds to the S185 step in Figure 34

[0551] In some embodiments, the preparation process can include stripping the photoresist between the metal layer and the substrate, so that an air gap is formed between the metal layer and the substrate, thereby forming a first electrical connection bridge between the first radio frequency electrode and the first direct current electrode. This step corresponds to the S186 step in Figure 3

[0552] In some embodiments, a first radio frequency electrode 925, a first direct current electrode 926, and a metal layer between the first radio frequency electrode 925 and the first direct current electrode 926 are formed along the surface of the photoresist by metal lithography and metal deposition, wherein the metal layer connects the first radio frequency electrode 925 and the first direct current electrode 926. The photoresist between the metal layer and the substrate is stripped, so that an air gap is formed between the metal layer and the substrate, the metal layer is suspended, and the topography before stripping is maintained, thereby forming a first electrical connection bridge 971 between the first radio frequency electrode 925 and the first direct current electrode 926.​​​​

[0553] Figures 32-34 A schematic of a laser chip fabrication process according to some embodiments Figure 27 , Figure 35 A schematic of a laser chip fabrication process according to some embodiments Figure 35 , Figure 35 A schematic of a laser chip fabrication process according to some embodiments Figure 36 . As shown in FIG. 1 1, in some embodiments, a laser chip fabrication process is shown in the form of a flowchart, the laser chip fabrication process includes: Figure 37

[0554] In some embodiments, an N-InP layer is grown along the surface of the substrate, and a first quantum well layer 912 and a second quantum well layer 922 are grown along the surface of the N-InP layer, and a grating layer 913 is formed on the surface of the first quantum well layer 912. The first quantum well layer 912 and the second quantum well layer 922 are active regions of the light emitting region 910 and the electro-absorption modulation region 920, respectively. Light emission of the light emitting region 910 occurs in the first quantum well layer 912, and modulation signal of the electro-absorption modulation region 920 occurs in the second quantum well layer 922. This process corresponds to step S110 shown in the flowchart.

[0555] In some embodiments, when the light emitting region 910 and the electro-absorption modulation region 920 share the N-InP layer, the driving modulation signal from the N-InP layer to the electro-absorption modulation region 920 will be disturbed by the light emitting region 910, and it is difficult to perform differential driving. Therefore, an electrical isolation region 951 is located between the first N-InP layer 911a and the second N-InP layer 921, and the electrical isolation region 951 performs N-face electrical isolation processing on the light emitting region 910 and the electro-absorption modulation region 920. In some embodiments, the interface between the first quantum well layer 912 and the second quantum well layer 922 is ion implanted downward, and the ion implanted region is bombarded by an ion beam to form deep level defects and reduce conductivity, thereby forming the electrical isolation region 951. The electrical isolation region 951 is a high resistance region, and carriers cannot pass through the electrical isolation region 951 to enter the working region of the other region, thereby avoiding interference from the other region. This process corresponds to step S120 shown in the flowchart.

[0556] In some embodiments, after obtaining the electrical isolation region 951, a predetermined thickness of the electrical isolation region is etched to form a connection waveguide region 952 on the surface of the electrical isolation region, and the connection waveguide region 952 is located between the first quantum well layer 912 and the second quantum well layer 922, and the connection waveguide region 952 establishes optical connection between the first quantum well layer 912 and the second quantum well layer 922. This process corresponds to steps S130 and S140 shown in the flowchart.

[0557] ​In some embodiments, a P-InP layer 940a is grown on the current surface. The P-InP layer 940a is laid on the entire plane. This process corresponds to step S150 shown in the accompanying drawings.

[0558] In some embodiments, the current structure is etched to form a first electrode portion 923, a second electrode portion 924, a third electrode portion 925, and a fourth electrode portion 926. This process corresponds to step S160 shown in the accompanying drawings. Figure 36

[0559] In some embodiments, a first support portion 931, a second support portion 932, a third support portion 933, and a fourth support portion 934 are formed on the surface of the substrate 930a. A first radio frequency electrode 925, a first direct current electrode 926, a second radio frequency electrode 927, and a second direct current electrode 928 are deposited on the surface of the first support portion 931, the second support portion 932, the third support portion 933, and the fourth support portion 934, respectively. This process corresponds to step S170 shown in the accompanying drawings.

[0560] In some embodiments, a first electrical connection bridge 971 is formed between the first radio frequency electrode 925 and the first direct current electrode 926, a second electrical connection bridge 972 is formed between the second electrode portion 924 and the third electrode portion 9341, and a third electrical connection bridge 973 is formed between the third electrode portion 9341 and the second radio frequency electrode 927. A first electrode portion 923 is grown on the surface of the first electrical connection bridge 971. This process corresponds to step S180.

[0561] In the present disclosure, by reasonably arranging the first radio frequency electrode, the second radio frequency electrode, the first direct current electrode, and the second direct current electrode, the coplanar electrode differential driving mode is realized to modulate the signal, thereby reducing the power consumption.

[0562] In some embodiments, the laser chip can include a plurality of light emitting regions to realize array light emission of the laser chip. Exemplarily, the laser chip can include a first light emitting waveguide, a second light emitting waveguide, a third light emitting waveguide, and a fourth light emitting waveguide to emit four beams of light without carrying information. The following embodiments are exemplarily described by taking the laser chip including a plurality of light emitting waveguides as an example.

[0563] Figure 37 FIG. 1 shows a structure of a laser assembly 400a according to some embodiments, Figure 38 FIG. 2 shows a structure of a laser assembly 400b according to some embodiments. The laser assembly 400b provided in the embodiments of the present disclosure can generate a plurality of light signals; for example, the laser assembly 400b can generate 2 beams, 3 beams, 4 beams, etc. of light signals.

[0564] In some embodiments, as shown in FIG. 3, Figure 1 The laser assembly 400b includes a laser chip 410, which can generate 4 beams of light signals. ​

[0565] In some embodiments, the laser assembly 400b includes a substrate 420, and a surface of the substrate 420 is formed with a circuit pattern. For example, the top surface of the substrate 420 is provided with transmission lines, pads, and the like. The laser chip 410 is disposed on the substrate 420, and the laser chip 410 is connected to the corresponding circuit pattern on the substrate 420 to supply power or input high-frequency signals to the laser chip 410 through the substrate 420, and the like.

[0566] Figure 39 FIG. 4 is a structural schematic diagram of a laser chip according to some embodiments, Figure 38 FIG. 5 is an exploded view of a laser chip according to some embodiments, in which the dashed arrows indicate the direction of light transmission. As shown in Figure 40 and Figure 2 In some embodiments, the laser chip 410 includes a chip body 411. The chip body 411 includes a plurality of ridge waveguides or the like for generating optical signals; for example, the chip body 411 includes 2 ridge waveguides, 3 ridge waveguides, 4 ridge waveguides, or the like. The two sides of the ridge waveguides are formed with grooves. The ridge waveguides in the chip body 411 can include a lower confinement layer, an active layer, an upper confinement layer, or a grating layer, which are sequentially stacked.

[0567] In some embodiments, one ridge waveguide includes a light-emitting waveguide and a modulation waveguide, and the output end of the light-emitting waveguide is connected to the input end of the modulation waveguide, i.e., the corresponding connected light-emitting waveguide and modulation waveguide form a ridge waveguide. The light-emitting waveguide is used to output light, and the modulation waveguide is used to modulate the light output by the light-emitting waveguide to output an optical signal.

[0568] In some embodiments, the chip body 411 includes a first light-emitting waveguide 4111 and a second light-emitting waveguide 4112, and the first light-emitting waveguide 4111 and the second light-emitting waveguide 4112 are arranged side by side with a spacing therebetween. The first light-emitting waveguide 4111 and the second light-emitting waveguide 4112 extend along the length of the chip body 411. The first light-emitting waveguide 4111 and the second light-emitting waveguide 4112 are used to generate light, and the first light-emitting waveguide 4111 and the second light-emitting waveguide 4112 form a light-emitting region of the chip body 411.

[0569] In some embodiments, the chip body 411 includes a first modulation waveguide 4113 and a second modulation waveguide 4114, which are arranged side by side with a spacing between the first modulation waveguide 4113 and the second modulation waveguide 4114. The first modulation waveguide 4113 and the second modulation waveguide 4114 extend along the length of the chip body 411. The first modulation waveguide 4113 is located at the light output end of the first light emitting waveguide 4111, and the second modulation waveguide 4114 is located at the light output end of the second light emitting waveguide 4112. For example, one end of the first modulation waveguide 4113 is connected to the light output end of the first light emitting waveguide 4111, and one end of the second modulation waveguide 4114 is connected to the light output end of the second light emitting waveguide 4112. The first modulation waveguide 4113 is used to modulate the light output by the first light emitting waveguide 4111 to generate a beam of light signals, and the second modulation waveguide 4114 is used to modulate the light output by the second light emitting waveguide 4112 to generate a beam of light signals. The first modulation waveguide 4113 and the second modulation waveguide 4114 form a modulation region of the chip body 411. The chip body 411 also includes a plurality of modulation regions located on one side of the light emitting region, and the light output port region is located on one side of the plurality of modulation regions.

[0570] In some embodiments, the top of the chip body 411 is provided with a first modulation pad 412 and a second modulation pad 413. The first modulation pad 412 is located above the first modulation waveguide 4113, and the second modulation pad 413 is located above the second modulation waveguide 4114. The first modulation pad 412 is used to load a high-frequency modulation signal to the first modulation waveguide 4113 to make the first modulation waveguide 4113 modulate the light output by the first light emitting waveguide 4111, and the second modulation pad 413 is used to load a high-frequency modulation signal to the second modulation waveguide 4114 to make the second modulation waveguide 4114 modulate the light output by the second light emitting waveguide 4112.

[0571] In some embodiments, the first modulation waveguide 4113 is close to the edge of the chip body 411, and the first modulation pad 412 and the second modulation pad 413 are arranged above the spacing between the first modulation waveguide 4113 and the second modulation waveguide 4114.

[0572] In some embodiments, the first modulation pad 412 is closer to one end of the chip body 411 than the second modulation pad 413, i.e., the first modulation pad 412 is closer to the light emitting region of the chip body 411 than the second modulation pad 413. Of course, in some embodiments, the second modulation pad 413 can be closer to one end of the chip body 411 than the first modulation pad 412.

[0573] Figure 41 A partial enlargement of a laser chip according to some embodiments Figure 42 , Figure 43 For Figure 44Fig. 6 is a schematic diagram of the structure of the modulation pads in Fig. 5. In some embodiments, the first modulation pad 412 includes a first wire-bonding portion 4121, and the second modulation pad 413 includes a second wire-bonding portion 4131. The first wire-bonding portion 4121 and the second wire-bonding portion 4131 are located above the space between the first modulation waveguide 4113 and the second modulation waveguide 4114. The first wire-bonding portion 4121 is used to facilitate wire bonding on the first modulation pad 412, and the second wire-bonding portion 4131 is used to facilitate wire bonding on the second modulation pad 413. For example, the top of the first wire-bonding portion 4121 is circular, oval, square, or the like, and the top of the second wire-bonding portion 4131 is circular, oval, square, or the like.

[0574] In some embodiments, the first wire-bonding portion 4121 and the second wire-bonding portion 4131 are arranged side by side above the space between the first modulation waveguide 4113 and the second modulation waveguide 4114, so that the distance from the first wire-bonding portion 4121 and the second wire-bonding portion 4131 to the edge of the chip body 411 is approximately equal and relatively short, so as to facilitate control of the wire length.

[0575] In some embodiments, the first modulation pad 412 includes a first electrode portion 4122, and the first electrode portion 4122 is located on the top of the first modulation waveguide 4113. The first electrode portion 4122 is connected to the first wire-bonding portion 4121. For example, the first electrode portion 4122 is a strip structure with a small width, and is laid on the top of the first modulation waveguide 4113.

[0576] In some embodiments, the second modulation pad 413 includes a second electrode portion 4132, and the second electrode portion 4132 is located on the top of the second modulation waveguide 4114. The second electrode portion 4132 is connected to the second wire-bonding portion 4131. For example, the second electrode portion 4132 is a strip structure with a small width, and is laid on the top of the second modulation waveguide 4114.

[0577] In some embodiments, the top of the chip body 411 is provided with a first light-emitting pad 414 and a second light-emitting pad 415. The first light-emitting pad 414 is located above the first light-emitting waveguide 4111, and the top of the first light-emitting waveguide 4111 is in contact with the first light-emitting pad 414. The second light-emitting pad 415 is located above the second light-emitting waveguide 4112, and the top of the second light-emitting waveguide 4112 is in contact with the second light-emitting pad 415.

[0578] In some embodiments, the first light-emitting pad 414 includes a first wire-bonding area 4141, and the first wire-bonding area 4141 is used for wire bonding of the first light-emitting pad 414. For example, one end of the first wire-bonding area 4141 is close to the end face of one end of the chip body 411, and the width of the first wire-bonding area 4141 is greater than the width of other areas of the first light-emitting pad 414, so as to facilitate wire bonding of the first light-emitting pad 414.

[0579] In some embodiments, the second light emitting pad 415 includes a second wire bonding area 4151 for the second light emitting pad 415 to connect a wire. For example, one end of the second wire bonding area 4151 is close to the other end of the first wire bonding area 4141, and the other end of the second wire bonding area 4151 is away from the other end of the first wire bonding area 4141. The second wire bonding area 4151 is staggered with the first wire bonding area 4141, so that the first light emitting pad 414 and the second light emitting pad 415 have sufficient wire bonding space, and the space at the top of one end of the chip body 411 can be fully utilized.

[0580] In some embodiments, the chip body 411 includes a third light emitting waveguide 4115 extending along the length of the chip body 411. The third light emitting waveguide 4115 is disposed at the side of the second light emitting waveguide 4112, away from the first light emitting waveguide 4111, and has a spacing between the third light emitting waveguide 4115 and the second light emitting waveguide 4112. The third light emitting waveguide 4115 is used to generate light.

[0581] In some embodiments, the chip body 411 includes a fourth light emitting waveguide 4116 extending along the length of the chip body 411. The fourth light emitting waveguide 4116 is disposed at the side of the third light emitting waveguide 4115, away from the second light emitting waveguide 4112, and has a spacing between the fourth light emitting waveguide 4116 and the third light emitting waveguide 4115. The fourth light emitting waveguide 4116 is used to generate light.

[0582] In some embodiments, the chip body 411 includes a third modulation waveguide 4117 extending along the length of the chip body 411. The third modulation waveguide 4117 is disposed at the side of the second modulation waveguide 4114, away from the first modulation waveguide 4113, and is disposed side by side with the second modulation waveguide 4114 and has a spacing between the third modulation waveguide 4117 and the second modulation waveguide 4114. One end of the third modulation waveguide 4117 is connected to the light output end of the third light emitting waveguide 4115, and the third modulation waveguide 4117 is used to modulate the light output by the third light emitting waveguide 4115 to generate a beam of light signals.

[0583] In some embodiments, the chip body 411 includes a fourth modulation waveguide 4118 extending along the length of the chip body 411. The fourth modulation waveguide 4118 is disposed at the side of the third modulation waveguide 4117, away from the second modulation waveguide 4117, and is disposed side by side with the third modulation waveguide 4117 and has a spacing between the fourth modulation waveguide 4118 and the third modulation waveguide 4117. One end of the fourth modulation waveguide 4118 is connected to the light output end of the fourth light emitting waveguide 4116, and the fourth modulation waveguide 4118 is used to modulate the light output by the fourth light emitting waveguide 4116 to generate a beam of light signals.

[0584] In some embodiments, the top of the chip body 411 is provided with a third modulation pad 416 and a fourth modulation pad 417. The third modulation pad 416 is located above the third modulation waveguide 4117, and the fourth modulation pad 417 is located above the fourth modulation waveguide 4118. The third modulation pad 416 is used to load a high-frequency modulation signal to the third modulation waveguide 4117, so that the third modulation waveguide 4117 modulates the light output by the third light-emitting waveguide 4115; the fourth modulation pad 417 is used to load a high-frequency modulation signal to the fourth modulation waveguide 4118, so that the fourth modulation waveguide 4118 modulates the light output by the fourth light-emitting waveguide 4116.

[0585] In some embodiments, the fourth modulation waveguide 4118 is close to the edge of the chip body 411, and the third modulation pad 416 and the fourth modulation pad 417 are arranged above the interval between the third modulation waveguide 4117 and the fourth modulation waveguide 4118.

[0586] In some embodiments, the fourth modulation pad 417 is closer to one end of the chip body 411 than the third modulation pad 416, i.e., the fourth modulation pad 417 is closer to the light-emitting area of the chip body 411 than the third modulation pad 416. Of course, in some embodiments, the third modulation pad 416 can be closer to one end of the chip body 411 than the fourth modulation pad 417.

[0587] In some embodiments, the third modulation pad 416 includes a third wire-bonding portion 4161, and the fourth modulation pad 417 includes a fourth wire-bonding portion 4171. The third wire-bonding portion 4161 and the fourth wire-bonding portion 4171 are located above the interval between the third modulation waveguide 4117 and the fourth modulation waveguide 4118. The third wire-bonding portion 4161 is used to facilitate wire bonding of the third modulation pad 416, and the fourth wire-bonding portion 4171 is used to facilitate wire bonding of the fourth modulation pad 417. For example, the top of the third wire-bonding portion 4161 is circular, elliptical, square, etc., and the top of the fourth wire-bonding portion 4171 is circular, elliptical, square, etc.

[0588] In some embodiments, the third wire-bonding portion 4161 and the fourth wire-bonding portion 4171 are arranged side by side above the interval between the third modulation waveguide 4117 and the fourth modulation waveguide 4118, so that the distance from the third wire-bonding portion 4161 and the fourth wire-bonding portion 4171 to the edge of the chip body 411 is approximately equal and relatively short, so as to facilitate control of the wire bonding length.

[0589] In some embodiments, the third modulation pad 416 includes a third electrode portion 4162, and the third electrode portion 4162 is located on the top of the third modulation waveguide 4117, and the third electrode portion 4162 is connected to the third wire-bonding portion 4161. For example, the third electrode portion 4162 is a strip structure with a small width, which is laid on the top of the third modulation waveguide 4117.

[0590] In some embodiments, the fourth modulation pad 417 comprises a fourth electrode portion 4172, which is located on the top of the fourth modulation waveguide 4118, and the fourth electrode portion 4172 is connected to the fourth wire-bonding portion 4171. For example, the fourth electrode portion 4172 is a strip structure with a small width, which is laid on the top of the fourth modulation waveguide 4118.

[0591] In some embodiments, the top of the chip body 411 is provided with a third light-emitting pad 418 and a fourth light-emitting pad 419. The third light-emitting pad 418 is located above the third light-emitting waveguide 4115, and the top of the third light-emitting waveguide 4115 is in contact with the third light-emitting pad 418. The fourth light-emitting pad 419 is located above the fourth light-emitting waveguide 4116, and the top of the third light-emitting waveguide 4115 is in contact with the fourth light-emitting pad 419.

[0592] In some embodiments, the third light-emitting pad 418 comprises a third wire-bonding area 4181, which is used for the third light-emitting pad 418 to be connected to a wire. For example, the third wire-bonding area 4181 is located on the side of the second wire-bonding area 4151, and the width of the third wire-bonding area 4181 is greater than that of other areas on the third light-emitting pad 418, so as to facilitate the wire bonding of the third light-emitting pad 418.

[0593] In some embodiments, the fourth light-emitting pad 419 comprises a fourth wire-bonding area 4191, which is used for the fourth light-emitting pad 419 to be connected to a wire. For example, one end of the fourth wire-bonding area 4191 is close to the end face of one end of the chip body 411, and the other end of the fourth wire-bonding area 4191 is close to one end of the third wire-bonding area 4181. The fourth wire-bonding area 4191 and the third wire-bonding area 4181 are staggered, so that the third light-emitting pad 418 and the fourth light-emitting pad 419 have sufficient wire-bonding space, and the space on the top of one end of the chip body 411 can be fully utilized.

[0594] Figure 43 A partial enlarged view of a laser chip according to some embodiments Figure 45 , Figure 1A structure of a light output end of a laser chip is shown. In some embodiments, the other end of the first modulating waveguide 4113 is a light output end for outputting optical signals. For example, the other end of the first modulating waveguide 4113 includes a first deflection part 4113a, which deflects the other end of the first modulating waveguide 4113 relative to the one end of the first modulating waveguide 4113, so as to deflect the optical axis of the optical signals output by the first modulating waveguide 4113, and then the first deflection part 4113a inclines the optical axis of the optical signals output by the first modulating waveguide 4113 relative to the optical axis of the input light of the first modulating waveguide 4113. When the light output end of the laser chip 410 is provided with an optical device, part of the optical signals output by the first modulating waveguide 4113 will be reflected by the optical device in the process of passing through the optical device, and the first deflection part 4113a can prevent the reflected optical signals from entering the first modulating waveguide 4113.

[0595] In some embodiments, the deflection angle of the first deflection part 4113a is 5-10°, such as 7-9°, etc.

[0596] In some embodiments, the other end of the second modulating waveguide 4114 is a light output end for outputting optical signals. The other end of the second modulating waveguide 4114 includes a second deflection part 4114a, which deflects the other end of the second modulating waveguide 4114 relative to the one end of the second modulating waveguide 4114, so as to deflect the optical axis of the optical signals output by the second modulating waveguide 4114, and then the second deflection part 4114a inclines the optical axis of the optical signals output by the second modulating waveguide 4114 relative to the optical axis of the input light of the second modulating waveguide 4114. When the light output end of the laser chip 410 is provided with an optical device, part of the optical signals output by the second modulating waveguide 4114 will be reflected by the optical device in the process of passing through the optical device, and the second deflection part 4114a can prevent the reflected optical signals from entering the second modulating waveguide 4114.

[0597] In some embodiments, the deflection angle of the second deflection part 4114a is 5-10°, such as 7-9°, etc.

[0598] In some embodiments, the other end of the third modulating waveguide 4117 is an out-coupling end for outputting the optical signal. The other end of the third modulating waveguide 4117 includes a third deflection portion 4117a, which deflects the other end of the third modulating waveguide 4117 relative to the one end of the third modulating waveguide 4117, so as to deflect the optical axis of the optical signal output by the third modulating waveguide 4117. In this way, the third deflection portion 4117a can tilt the optical axis of the optical signal output by the third modulating waveguide 4117 relative to the optical axis of the input light of the third modulating waveguide 4117. When the light device is arranged at the light output end of the laser chip 410, part of the optical signal output by the third modulating waveguide 4117 will be reflected by the light device in the process of passing through the light device. The third deflection portion 4117a can prevent the reflected optical signal from entering the third modulating waveguide 4117.

[0599] In some embodiments, the deflection angle of the third modulating waveguide 4117 is 5-10°, such as 7-9°, etc.

[0600] In some embodiments, the other end of the fourth modulating waveguide 4118 is an out-coupling end for outputting the optical signal. The other end of the fourth modulating waveguide 4118 includes a fourth deflection portion 4118a, which deflects the other end of the fourth modulating waveguide 4118 relative to the one end of the fourth modulating waveguide 4118, so as to deflect the optical axis of the optical signal output by the fourth modulating waveguide 4118. In this way, the fourth deflection portion 4118a can tilt the optical axis of the optical signal output by the fourth modulating waveguide 4118 relative to the optical axis of the input light of the fourth modulating waveguide 4118. When the light device is arranged at the light output end of the laser chip 410, part of the optical signal output by the fourth modulating waveguide 4118 will be reflected by the light device in the process of passing through the light device. The fourth deflection portion 4118a can prevent the reflected optical signal from entering the fourth modulating waveguide 4118.

[0601] In some embodiments, the deflection angle of the fourth modulating waveguide 4118 is 5-10°, such as 7-9°, etc.

[0602] Figure 46 Another structure of a laser chip according to some embodiments is shown in FIG. 4B. As shown in FIG. 4B, the first light emitting pad 414 and the second light emitting pad 415 have the same shape, and the first light emitting pad 414 and the second light emitting pad 415 are arranged side by side on the top of the light emitting area of the chip body 411. Figure 2

[0603] In some embodiments, the third light emitting pad 418 and the fourth light emitting pad 419 have the same shape, and the third light emitting pad 418 and the fourth light emitting pad 419 are arranged side by side on the top of the light emitting area of the chip body 411.

[0604] ​In some embodiments, the first light-emitting pad 414 and the fourth light-emitting pad 419 are symmetrically arranged on the top of the chip body 411.

[0605] In some embodiments, the second light-emitting pad 415 and the third light-emitting pad 418 are symmetrically arranged on the top of the chip body 411.

[0606] Figure 47 This is a perspective view of a substrate provided according to some embodiments. Figure 48 This is a top view of a substrate provided according to some embodiments. Figure 49 for Figure 50 A magnified view of a portion of point A in the middle. (See image below.) Figure 1 As shown, the substrate 420 includes a substrate body 421, and a circuit pattern is formed on the surface of the substrate body 421. The substrate body 421 is a ceramic substrate body. In some embodiments, an electrical connection area 422 is formed on the top surface of the substrate body 421, and the electrical connection area 422 is used for mounting and connecting the laser chip 410.

[0607] In some embodiments, the substrate body 421 includes a first side 4211 and a second side 4212, wherein the first side 4211 is located at one end of the substrate body 421, and the second side 4212 is located at the other end of the substrate body 421. One end of the electrical connection region 422 is spaced apart from one end of the substrate body 421, and the other end of the electrical connection region 422 is close to the end face of the other end of the substrate body 421. One end of the electrical connection region 422 is spaced apart from the first side 4211, and the other end of the electrical connection region 422 is close to the second side 4212.

[0608] In some embodiments, a solder mask bridge may be provided at the edge of the electrical connection area 422 to prevent solder flow during the process of soldering the laser chip 410 to the electrical connection area 422.

[0609] In some embodiments, a first high-frequency line 423 and a second high-frequency line 424 are disposed on the top surface of the substrate body 421, and the first end of the first high-frequency line 423 and the first end of the second high-frequency line 424 are located on one side of the electrical connection region 422. For example, the first end of the first high-frequency line 423 and the first end of the second high-frequency line 424 are disposed side by side on one side of the electrical connection region 422 and are as close as possible to the side of the electrical connection region 422.

[0610] In some embodiments, the second end of the first high-frequency line 423 and the second end of the second high-frequency line 424 are located at the top of the second side edge of the substrate body 421. The first end of the first high-frequency line 423 is smoothly connected to the second end of the first high-frequency line 423, and the first end of the second high-frequency line 424 is smoothly connected to the second end of the second high-frequency line 424.

[0611] In some embodiments, the second end of the first high-frequency line 423 and the second end of the second high-frequency line 424 are located at the top of the first side edge of the substrate body 421. The first end of the first high-frequency line 423 is smoothly connected to the second end of the first high-frequency line 423, and the first end of the second high-frequency line 424 is smoothly connected to the second end of the second high-frequency line 424.

[0612] In some embodiments, a third high-frequency line 425 and a fourth high-frequency line 426a are arranged on the top surface of the substrate body 421, and the first end of the third high-frequency line 425 and the first end of the fourth high-frequency line 426a are located at the other side of the electrical connection area 422. For example, the first end of the third high-frequency line 425 and the first end of the fourth high-frequency line 426a are arranged side by side at the other side of the electrical connection area 422, and as close to the side edge of the electrical connection area 422 as possible.

[0613] In some embodiments, the second end of the third high-frequency line 425 and the second end of the fourth high-frequency line 426a are located at the top of the second side edge of the substrate body 421. The second end of the third high-frequency line 425 is smoothly connected to the first end of the third high-frequency line 425, and the second end of the fourth high-frequency line 426a is smoothly connected to the first end of the fourth high-frequency line 426a.

[0614] In some embodiments, the second end of the third high-frequency line 425 and the second end of the fourth high-frequency line 426a are located at the top of the other side edge of the substrate body 421. The second end of the third high-frequency line 425 is smoothly connected to the first end of the third high-frequency line 425, and the second end of the fourth high-frequency line 426a is smoothly connected to the first end of the fourth high-frequency line 426a.

[0615] In some embodiments, a ground layer 427 is arranged on the top surface of the substrate body 421, the ground layer 427 is connected to the electrical connection area 422, and the ground layer 427 surrounds the side edges of the first high-frequency line 423 and the like and is insulated from the first high-frequency line 423 and the like. In some embodiments, the ground layer 427 extends to the side surface or the bottom surface of the substrate body.

[0616] In some embodiments, a first output pad 431 is arranged on the top surface of the substrate body 421, and the first output pad 431 is arranged at the side edge of the first end of the first high-frequency line 423. For example, the edge of the first output pad 431 is provided with a first thin-film resistor 4311, one end of the first thin-film resistor 4311 is electrically connected to the first output pad 431, and the other end of the first thin-film resistor 4311 is electrically connected to the ground layer 427. The first thin-film resistor 4311 is used as a matching resistor of the first modulation output circuit. Of course, in the embodiments of the present disclosure, the matching resistor of the first modulation output circuit is not limited to the first thin-film resistor 4311, and other forms of resistors can also be used.

[0617] In some embodiments, the top surface of the substrate body 421 is provided with a second output pad 432, which is arranged at the side of the first end of the second high-frequency line 424. The edge of the second output pad 432 is provided with a second thin-film resistor 4321, one end of which is electrically connected to the second output pad 432, and the other end of which is electrically connected to the ground layer 427. The second thin-film resistor 4321 is used as a matching resistor of the second modulation output circuit. Of course, in the embodiments of the present disclosure, the matching resistor of the second modulation output circuit is not limited to the second thin-film resistor 4321, but other forms of resistors can also be used.

[0618] In some embodiments, the first output pad 431 and the second output pad 432 are close to the electrical connection area 422, the first output pad 431 is located at the side of the first end of the first high-frequency line 423 and away from the first end of the second high-frequency line 424, and the second output pad 432 is located at the side of the first end of the second high-frequency line 424 and away from the first end of the first high-frequency line 423, and the first end of the first high-frequency line 423 and the first end of the second high-frequency line 424 are close to each other.

[0619] In some embodiments, the top surface of the substrate body 421 is provided with a third output pad 433, which is arranged at the side of the first end of the third high-frequency line 425. The edge of the third output pad 433 is provided with a third thin-film resistor 4331, one end of which is electrically connected to the third output pad 433, and the other end of which is electrically connected to the ground layer 427. The third thin-film resistor 4331 is used as a matching resistor of the third modulation output circuit. Of course, in the embodiments of the present disclosure, the matching resistor of the third modulation output circuit is not limited to the third thin-film resistor 4331, but other forms of resistors can also be used.

[0620] In some embodiments, the top surface of the substrate body 421 is provided with a fourth output pad 434, which is arranged at the side of the first end of the fourth high-frequency line 426a. The edge of the fourth output pad 434 is provided with a fourth thin-film resistor 4341, one end of which is electrically connected to the fourth output pad 434, and the other end of which is electrically connected to the ground layer 427. The fourth thin-film resistor 4341 is used as a matching resistor of the fourth modulation output circuit. Of course, in the embodiments of the present disclosure, the matching resistor of the fourth modulation output circuit is not limited to the fourth thin-film resistor 4341, but other forms of resistors can also be used.

[0621] In some embodiments, the third output pad 433 and the fourth output pad 434 are located close to the electrical connection region 422, the third output pad 433 is located at the side of the first end of the third high-frequency line 425 and away from the first end of the fourth high-frequency line 426a, and the fourth output pad 434 is located at the side of the first end of the fourth high-frequency line 426a and away from the first end of the third high-frequency line 425, and the first end of the third high-frequency line 425 and the first end of the fourth high-frequency line 426a are close to each other.

[0622] In some embodiments, the second output pad 432 is located at the edge of the other end of the substrate body 421, and the third output pad 433 is located at the edge of the other end of the substrate body 421.

[0623] In some embodiments, the top surface of the substrate body 421 is provided with a first LD pad 435, and the first LD pad 435 is located between the second end of the first high-frequency line 423 and the second end of the second high-frequency line 424.

[0624] In some embodiments, the top surface of the substrate body 421 is provided with a second LD pad 436, and the second LD pad 436 is located between the second end of the first high-frequency line 423 and the second end of the fourth high-frequency line 426a.

[0625] In some embodiments, the top surface of the substrate body 421 is provided with a third LD pad 437, and the third LD pad 437 is located between the second end of the first high-frequency line 423 and the second end of the fourth high-frequency line 426a.

[0626] In some embodiments, the top surface of the substrate body 421 is provided with a fourth LD pad 438, and the fourth LD pad 438 is located between the second end of the third high-frequency line 425 and the second end of the fourth high-frequency line 426a.

[0627] In some embodiments, the second LD pad 436 and the third LD pad 437 are arranged side by side at the side of one end of the electrical connection region 422.

[0628] Figure 51 A schematic diagram of the electrical connection between a laser chip and a substrate according to some embodiments Figure 2 , Figure 50 A schematic diagram of the electrical connection between a laser chip and a substrate according to some embodiments Figure 51 ; Figure 21 and Figure 22 A schematic diagram of the electrical connection between a laser chip and a substrate according to some embodiments

[0629] In some embodiments, the first modulation pad 412 is wire-bonded to the first end of the first high-frequency line 423, the first modulation pad 412 is wire-bonded to the first output pad 431, and the first light-emitting pad 414 is wire-bonded to the first LD pad 435. Exemplarily, two wire-bonds connected to the first modulation pad 412 extend from the first modulation pad 412 to the same side of the chip body 411.

[0630] In some embodiments, the second modulation pad 413 is wire-bonded to the first end of the second high-frequency line 424, the second modulation pad 413 is wire-bonded to the second output pad 432, and the second light-emitting pad 415 is wire-bonded to the second LD pad 436. Exemplarily, two wire-bonds connected to the second modulation pad 413 extend from the second modulation pad 413 to the same side of the chip body 411.

[0631] In some embodiments, the third modulation pad 416 is wire-bonded to the first end of the third high-frequency line 425, the third modulation pad 416 is wire-bonded to the third output pad 433, and the third light-emitting pad 418 is wire-bonded to the third LD pad 437. Exemplarily, two wire-bonds connected to the third modulation pad 416 extend from the third modulation pad 416 to the same side of the chip body 411.

[0632] In some embodiments, the fourth modulation pad 417 is wire-bonded to the first end of the fourth high-frequency line 426a, the fourth modulation pad 417 is wire-bonded to the fourth output pad 434, and the fourth light-emitting pad 419 is wire-bonded to the fourth LD pad 438. Exemplarily, two wire-bonds connected to the fourth modulation pad 417 extend from the fourth modulation pad 417 to the same side of the chip body 411.

[0633] In the laser assembly 400b provided by the embodiments of the present disclosure, the first modulation pad 412, the second modulation pad 413, the third modulation pad 416, and the fourth modulation pad 417 are all close to the edge of the laser chip 410 and have equal distances, and the first end of the first high-frequency line 423, the first end of the second high-frequency line 424, the first end of the third high-frequency line 425, and the first end of the fourth high-frequency line 426a on the substrate 420 are located at the edge of the electrical connection area 422 and close to the electrical connection area 422, so that the wire-bonding lengths of the first end of the first high-frequency line 423 and the first modulation pad 412, the first end of the second high-frequency line 424 and the second modulation pad 413, the first end of the third high-frequency line 425 and the third modulation pad 416, and the first end of the fourth high-frequency line 426a and the fourth modulation pad 417 can be effectively controlled, so as to control the parasitic inductance of the wire-bonding. In this way, the high-frequency performance of the four channels on the laser assembly 400b can be uniform, and four beams of light signals can be generated. Therefore, the laser assembly 400b provided by the embodiments of the present disclosure can meet the demand of the integrated multi-channel light signal emission of the optical module.

[0634] In some embodiments, the length of each wire bond on the laser assembly 400b can be controlled to be about 260 μm, such as 250-300 μm.

[0635] In some embodiments, the light emitting end of the laser chip 410 extends beyond the edge of the second side 4212 of the substrate body 421, i.e., the light emitting end of the laser chip 410 is not flush with the other end of the substrate body 421. The light emitting end of the laser chip 410 extending beyond the second side 4212 facilitates the assembly of optical devices, etc. at the light emitting end of the laser chip 410. For example, the first fold 4113a, etc. is located outside of the substrate body 421.

[0636] Figure 52 FIG. 4B shows a structure of another laser chip according to some embodiments, Figure 3 FIG. 4C shows a front view of another laser chip according to some embodiments, Figure 53 and Figure 4 FIG. 4D shows another structure of a laser chip. As shown in Figure 52 and Figure 53 In some embodiments, the laser chip 410 includes a first insulating layer 4101 disposed on the side of the first modulating waveguide 4113 and under the first modulating pad 412.

[0637] In some embodiments, the laser chip 410 includes a second insulating layer 4102 disposed on the side of the second modulating waveguide 4114 and under the second modulating pad 413.

[0638] In some embodiments, the laser chip 410 includes a third insulating layer 4103 disposed on the side of the third modulating waveguide 4117 and under the third modulating pad 416.

[0639] In some embodiments, the laser chip 410 includes a fourth insulating layer 4104 disposed on the side of the fourth modulating waveguide 4118 and under the fourth modulating pad 417.

[0640] In some embodiments, the first insulating layer 4101, the second insulating layer 4102, etc. are made of a material with low dielectric constant, such as PBO, PBI, etc. to reduce the parasitic capacitance effect of the first modulating pad 412, the second modulating pad 413, etc. and to improve the bandwidth of the laser chip 410.

[0641] In some embodiments, the grooves on both sides of the first light emitting waveguide 4111 are filled with a material with low dielectric constant, such as PBO, PBI, etc. The first light emitting pad 414, etc. is disposed on top of the grooves on both sides of the first light emitting waveguide 4111.

[0642] Figure 23 Another structure diagram of a laser chip without a pad is provided according to some embodiments, Figure 24 A state of disposing an insulating layer and the like on a laser chip is shown in FIG.

[0643] In some embodiments, the first insulating layer 4101 includes a first insulating layer 4101a and a first insulating layer 4101b, the first insulating layer 4101a is located on one side of the first modulation waveguide 4113, and the first insulating layer 4101b is disposed on the other side of the first modulation waveguide 4113. Exemplarily, the first insulating layer 4101b supports the connection of the first wire bonding part 4121. Of course, the structure of the first insulating layer 4101 is not limited to this in the embodiments of the present disclosure.

[0644] In some embodiments, the second insulating layer 4102 includes a second insulating layer 4102a and a second insulating layer 4102b, the second insulating layer 4102a is located on one side of the second modulation waveguide 4114, and the second insulating layer 4102b is disposed on the other side of the second modulation waveguide 4114. Exemplarily, the second insulating layer 4102a supports the connection of the second wire bonding part 4131. Of course, the structure of the second insulating layer 4102 is not limited to this in the embodiments of the present disclosure.

[0645] In some embodiments, the third insulating layer 4103 includes a third insulating layer 4103a and a third insulating layer 4103b, the third insulating layer 4103a is located on one side of the third modulation waveguide 4117, and the third insulating layer 4103b is disposed on the other side of the third modulation waveguide 4117. Exemplarily, the third insulating layer 4103b supports the connection of the third wire bonding part 4161. Of course, the structure of the third insulating layer 4103 is not limited to this in the embodiments of the present disclosure.

[0646] In some embodiments, the fourth insulating layer 4104 includes a fourth insulating layer 4104a and a fourth insulating layer 4104b, the fourth insulating layer 4104a is located on one side of the fourth modulation waveguide 4118, and the fourth insulating layer 4104b is disposed on the other side of the fourth modulation waveguide 4118. Exemplarily, the fourth insulating layer 4104a supports the connection of the fourth wire bonding part 4131. Of course, the structure of the fourth insulating layer 4104 is not limited to this in the embodiments of the present disclosure.

[0647] Figure 54 Another cross-sectional view of a laser chip is provided according to some embodiments Figure 1 , Figure 55 Another cross-sectional view of a laser chip is provided according to some embodiments Figure 2 , Figure 54 and Figure 55 A cross-sectional structure of a laser chip in a modulation region is shown. As Figure 25 andFigure 26 As shown, in some embodiments, the first modulating waveguide 4113 and the second modulating waveguide 4114 are etched through the quantum well layer.

[0648] In some embodiments, the bottom of the first insulating layer 4101 is lower than the bottom of the side edge groove of the first modulating waveguide 4113.

[0649] ​ A cross-sectional view of another laser chip according to some embodiments ​ , ​ A cross-sectional view of another laser chip according to some embodiments ​ , ​ and ​ A cross-sectional view of a laser chip at the light emitting region is shown. As shown, ​ and ​ The etching depth of the first light emitting waveguide 4111 and the second light emitting waveguide 4112 does not pass through the quantum well layer, i.e. the etching depth of the first light emitting waveguide 4111 and the second light emitting waveguide 4112 is above the quantum well layer.

[0650] ​ A partial schematic view of another laser chip according to some embodiments ​ , ​ A partial schematic view of another laser chip according to some embodiments ​ , ​ and ​ A light emitting waveguide and a modulating waveguide connection region is shown. As shown, ​ and ​ The chip body 411 includes a first connection waveguide 4110, one end of the first connection waveguide 4110 is connected to the output end of the first light emitting waveguide 4111, and the other end of the first connection waveguide 4110 is connected to the input end of the first modulating waveguide 4113. The first connection waveguide 4110 is used for the connection of the first light emitting waveguide 4111 to the first modulating waveguide 4113, so as to ensure the coupling efficiency of the light output by the first light emitting waveguide 4111 to the first modulating waveguide 4113.

[0651] In some embodiments, the first connecting waveguide 4110 includes a first tapered section 4110a and a second tapered section 4110b, the first tapered section 4110a has a width at one end smaller than a width at the other end, and the second tapered section 4110b has a width at one end larger than a width at the other end. The one end of the first tapered section 4110a is connected to the output end of the first light emitting waveguide 4111, the other end of the first tapered section 4110a is connected to the one end of the second tapered section 4110b, and the other end of the second tapered section 4110b is connected to the input end of the first modulating waveguide 4113. Of course, the structure of the first connecting waveguide 4110 in the embodiments of the present disclosure is not limited to this.

[0652] In some embodiments, the chip body 411 includes a first tapered groove 411a and a second tapered groove 411b, and the first tapered groove 411a and the second tapered groove 411b are located in the groove on the side of the first connecting waveguide 4110. For example, the first tapered groove 411a is arranged on one side of the first connecting waveguide 4110, and the second tapered groove 411b is arranged on the other side of the first connecting waveguide 4110.

[0653] In some embodiments, the first tapered groove 411a has a width at one end smaller than a width at the other end. For example, the other end of the first tapered groove 411a extends to the side of the first tapered section 4110a.

[0654] In some embodiments, the second tapered groove 411b has a width at one end smaller than a width at the other end. For example, the other end of the second tapered groove 411b extends to the side of the first tapered section 4110a.

[0655] In some embodiments, a connecting section can be arranged between the second light emitting waveguide 4112 and the second modulating waveguide 4114, between the third light emitting waveguide 4115 and the third modulating waveguide 4117, etc. The shape of the connecting section can refer to the shape of the first connecting waveguide 4110. The side of the connecting section can be provided with a tapered groove, and the shape of the tapered groove can refer to the shape of the first tapered groove 411a or the second tapered groove 411b.

[0656] The above is only a specific implementation of the present disclosure, but the protection scope of the present disclosure is not limited thereto, and any person skilled in the art can think of changes or replacements within the technical range disclosed by the present disclosure, which shall be covered within the protection scope of the present disclosure. Therefore, the protection scope of the present disclosure shall be subject to the protection scope of the claims.

Claims

1. An optical module characterized by comprising: The application relates to a laser module, comprising: a circuit board; a laser assembly, comprising: a substrate electrically connected to the circuit board a laser chip arranged on the surface of the substrate and electrically connected to the substrate, the laser chip comprising: a light-emitting area at one end of the laser chip, the light-emitting area emitting a plurality of non-information-carrying light beams; a plurality of modulation areas on one side of the light-emitting area, one of the plurality of modulation areas modulating a non-information-carrying light beam to generate an optical signal; an optical output port area on one side of the plurality of modulation areas, the optical output port area being arranged opposite to the light-emitting area, the plurality of modulation areas being arranged between the light-emitting area and the optical output port area, and the plurality of modulation areas modulating the generated multiple optical signals to output along the optical output port area.

2. The optical module according to claim 1, characterized by The light-emitting area comprises a first end and a second end arranged opposite to each other, the first end emitting a first light beam, and the second end emitting a second light beam, the first light beam and the second light beam not carrying information; the propagation direction of the second light beam is guided from the second end to the first end, so that the propagation directions of the second light beam and the first light beam are consistent; The laser chip comprises: a first optical splitter arranged on the first light beam transmission path to split the first light beam into a first split light and a second split light; the first split light and the second split light are transmitted along one side of the light-emitting area; a second optical splitter arranged on the side where the first end is located and arranged on the second light beam transmission path to split the second light beam into a third split light and a fourth split light; the third split light and the fourth split light are transmitted along the other side of the light-emitting area.

3. The optical module according to claim 2, characterized by The plurality of modulation areas comprise a first electro-absorption modulation area, a second electro-absorption modulation area, a third electro-absorption modulation area and a fourth electro-absorption modulation area, the first electro-absorption modulation area modulating the first split light to generate a first optical signal; the second electro-absorption modulation area modulating the second split light to generate a second optical signal; the third electro-absorption modulation area modulating the third split light to generate a third optical signal; and the fourth electro-absorption modulation area modulating the fourth split light to generate a fourth optical signal. The surface of the laser chip comprises: a first area for arranging a first electrode group corresponding to the first electro-absorption modulation area, the first electrode group comprising: a first radio frequency electrode arranged on the surface of the laser chip and electrically connected to the substrate; a second radio frequency electrode arranged on one side of the first radio frequency electrode and electrically connected to the substrate; a first direct current electrode arranged on the other side of the first radio frequency electrode and electrically connected to the substrate; a second direct current electrode arranged on one side of the second radio frequency electrode and electrically connected to the substrate; a second area arranged adjacent to the first area for arranging a first bias electrode and a second bias electrode, the first bias electrode and the second bias electrode being respectively electrically connected to the light-emitting area to input a bias current to the light-emitting area; the second area being arranged opposite to the optical output port area. ​ A third region is arranged opposite to the first region, and is used for arranging a third electrode group corresponding to the third electro-absorption modulation region. The third electrode group comprises: A third radio frequency electrode is arranged on the surface of the laser chip and is electrically connected with the substrate; A fourth radio frequency electrode is arranged on one side of the third radio frequency electrode and is electrically connected with the substrate; A third direct current electrode is arranged on the other side of the third radio frequency electrode and is electrically connected with the substrate; A fourth direct current electrode is arranged on one side of the fourth radio frequency electrode and is electrically connected with the substrate.

4. The optical module according to claim 3, characterized by The substrate comprises: A first signal pad is arranged on the surface of the substrate, is located on one side of the first radio frequency electrode, and is electrically connected with the first radio frequency electrode; A second signal pad is arranged on one side of the first signal pad and is electrically connected with the second radio frequency electrode; A third signal pad is arranged on one side close to the circuit board and is electrically connected with the circuit board; A fourth signal pad is arranged on one side of the third signal pad and is electrically connected with the circuit board; A first differential driving signal line has one end connected with the first signal pad and the other end connected with the third signal pad; A second differential driving signal line has one end connected with the second signal pad and the other end connected with the fourth signal pad; A fifth signal pad is arranged on the other side of the first signal pad and is electrically connected with the first direct current electrode; A sixth signal pad is arranged on one side of the second signal pad and is electrically connected with the second direct current electrode; A seventh signal pad is arranged on one side close to the circuit board and is electrically connected with the circuit board; An eighth signal pad is arranged on one side of the seventh signal pad and is electrically connected with the circuit board; A first differential bias signal line has one end connected with the fifth signal pad and the other end connected with the seventh signal pad; A second differential bias signal line has one end connected with the sixth signal pad and the other end connected with the eighth signal pad.

5. The optical module according to claim 3, characterized by The first electro-absorption modulation region comprises a first electrode part and a second electrode part; The first radio frequency electrode is electrically connected with the first electrode part; the first direct current electrode is electrically connected with the first radio frequency electrode, so that the first direct current electrode is electrically connected with the first electrode part; The second radio frequency electrode is electrically connected with the second electrode part; the second direct current electrode is electrically connected with the second radio frequency electrode, so that the second direct current electrode is electrically connected with the second electrode part.

6. The optical module of claim 1, wherein, The surface of the substrate is formed with a recess, and the laser chip is embedded in the recess, so that the surface of the laser chip is flush with the surface of the substrate.

7. The optical module of claim 1, wherein, The light emitting region comprises a first light emitting waveguide, a second light emitting waveguide, a third light emitting waveguide and a fourth light emitting waveguide arranged side by side in sequence; The plurality of modulation regions comprise a first modulation waveguide, a second modulation waveguide, a third modulation waveguide and a fourth modulation waveguide; The output end of the first light emitting waveguide is connected with the input end of the first modulation waveguide, the output end of the second light emitting waveguide is connected with the input end of the second modulation waveguide, the output end of the third light emitting waveguide is connected with the input end of the third modulation waveguide, and the output end of the fourth light emitting waveguide is connected with the input end of the fourth modulation waveguide; The laser chip comprises: A first modulation pad is arranged above the first modulation waveguide and extends to the top of the first modulation waveguide; a second modulation pad disposed above the second modulation waveguide and extending to a top of the second modulation waveguide; a third modulation pad disposed above the third modulation waveguide and extending to a top of the third modulation waveguide; a fourth modulation pad disposed above the fourth modulation waveguide and extending to a top of the fourth modulation waveguide; a first light-emitting pad disposed above the first light-emitting waveguide; a second light-emitting pad disposed above the second light-emitting waveguide; a third light-emitting pad disposed above the third light-emitting waveguide; a fourth light-emitting pad disposed above the fourth light-emitting waveguide; wherein the first modulation pad comprises a first wire-bonding portion, the second modulation pad comprises a second wire-bonding portion, the third modulation pad comprises a third wire-bonding portion, and the fourth modulation pad comprises a fourth wire-bonding portion; the first wire-bonding portion and the second wire-bonding portion are disposed side by side at a top between the first modulation waveguide and the second modulation waveguide, and the third wire-bonding portion and the fourth wire-bonding portion are disposed side by side at a top between the third modulation waveguide and the fourth modulation waveguide.

8. The optical module according to claim 7, characterized by the light-exit end of the first modulation waveguide comprises a first deflection portion for tilting an optical axis of light output by the first modulation waveguide; the light-exit end of the second modulation waveguide comprises a second deflection portion for tilting an optical axis of light output by the second modulation waveguide; the light-exit end of the third modulation waveguide comprises a third deflection portion for tilting an optical axis of light output by the third modulation waveguide; the light-exit end of the fourth modulation waveguide comprises a fourth deflection portion for tilting an optical axis of light output by the fourth modulation waveguide.

9. The optical module of claim 7, wherein, the first light-emitting pad comprises a first wire-bonding region, the second light-emitting pad comprises a second wire-bonding region, the third light-emitting pad comprises a third wire-bonding region, and the fourth light-emitting pad comprises a fourth wire-bonding region; one end of the first wire-bonding region is proximate to an end surface of the chip body, one end of the second wire-bonding region is proximate to the other end of the first wire-bonding region, the third wire-bonding region is located at a side of the second wire-bonding region, one end of the fourth wire-bonding region is proximate to the end surface of the chip body, and the other end of the fourth wire-bonding region is proximate to one end of the third wire-bonding region.

10. The optical module of claim 8, wherein, further comprising a first insulating layer, a second insulating layer, a third insulating layer, and a fourth insulating layer; the first insulating layer is disposed at a side of the first modulation waveguide and supports the first modulation pad, the second insulating layer is disposed at a side of the second modulation waveguide and supports the second modulation pad, the third insulating layer is disposed at a side of the third modulation waveguide and supports the third modulation pad, and the fourth insulating layer is disposed at a side of the fourth modulation waveguide and supports the fourth modulation pad.

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