Semiconductor cleaning shield device and semiconductor cleaning equipment

Abstract

The embodiment of the invention provides a semiconductor cleaning shield device and semiconductor cleaning equipment, the semiconductor cleaning shield device comprises a first shield which is annular and coaxially surrounds a wafer, the first shield comprises a first wall body and a first bending part, and the first bending part is arranged at the top end of the first wall body and is bent towards the direction close to the wafer; the height difference between the top end of the second protective cover and the first bent part is adjustable, so that the first protective cover and the second protective cover are switched between a first working condition and a second working condition; wherein under the first working condition, the wafer is located between the first bending part and the second protective cover in the height direction, the radial inner side wall face of the first wall body is used for blocking liquid drops thrown out by rotation of the wafer, and under the second working condition, the top end of the second protective cover is attached to the first bending part; and the first wall body, the first bending part and the second protective cover are enclosed to form a first cleaning space for cleaning liquid to flow.

Description

TECHNICAL FIELD

[0001] The present disclosure relates to the technical field of semiconductor cleaning, and in particular, to a semiconductor cleaning shield device and a semiconductor cleaning equipment. BACKGROUND

[0002] The wafer cleaning process in the semiconductor industry includes electroplating edge washing, photoresist edge washing, etc. In order to prevent splashing of the chemical liquid, a splash-proof shield is arranged around the wafer. Most of the liquid droplets thrown out by the wafer during rotation will hit the middle part of the shield and then slide down along the inner side wall of the shield. When the chemical liquid is relatively viscous or acid-base gas crystallization occurs, residues will be generated on the inner side wall of the shield. If the residues are splashed back to the wafer surface, yield loss will be caused.

[0003] There are mainly two kinds of current shield cleaning methods. One is to perform periodic preventive maintenance on the machine cavity, and the inner side wall of the shield is manually wiped to remove residues. The other is to use a conveying arm to spray deionized water to the surface of a vacuum chuck, and use the centrifugal force generated by the high-speed rotation of the vacuum chuck to throw the deionized water to the inner side wall to achieve cleaning and flushing. The shield cleaning method of the prior art has low cleaning efficiency and poor cleaning effect. SUMMARY

[0004] The present disclosure provides a semiconductor cleaning shield device and a semiconductor cleaning equipment, which can improve the cleaning effect of the semiconductor cleaning shield device.

[0005] According to a first aspect of the present disclosure, a semiconductor cleaning shield device is provided, comprising:

[0006] a first shield, which is annular and coaxially surrounds the wafer, the first shield comprising a first wall body and a first bent portion, the first bent portion being arranged at the top end of the first wall body and being bent towards the wafer;

[0007] a second shield, which is arranged at the radial inner side of the first shield and is spaced apart from the first shield, the second shield being annular and coaxially surrounding the wafer, the height difference between the top end of the second shield and the first bent portion being adjustable, so as to switch the first shield and the second shield between a first working condition and a second working condition;

[0008] In the first working condition, the wafer is located between the first bent portion and the second shield in the height direction, and the radial inner side wall of the first wall body is used to block the liquid droplets thrown out by the wafer during rotation. In the second working condition, the top end of the second shield is fitted to the first bent portion, so that the first wall body, the first bent portion and the second shield form a first cleaning space for the cleaning liquid to flow.

[0009] In some embodiments, the first shield is liftable and / or the second shield is liftable.

[0010] In some embodiments, the semiconductor cleaning shield device further comprises:

[0011] The bottom wall comprises a first opening for liquid outflow, the first shield and the second shield are arranged on the bottom wall, and the first opening is located between the first shield and the second shield and is selectively communicated with the first discharge pipeline or the first recovery pipeline.

[0012] In some embodiments, the first bending portion is bent towards a direction close to a radial inner side surface of the first wall body, the first bending portion comprises a first liquid outlet component, the first wall body is internally provided with a first cleaning liquid flow pipeline communicated with the first liquid outlet component, and in the second working condition, the first liquid outlet of the first liquid outlet component sprays cleaning liquid into the first cleaning space.

[0013] In some embodiments, in the first direction, the flow cross-sectional dimension of the first cleaning liquid flow pipeline is smaller than the thickness dimension of the first wall body.

[0014] In some embodiments, the first cleaning liquid flow pipeline comprises a plurality of flow channels arranged at intervals in the circumferential direction, a main body portion of the flow channel extends in the height direction, the first liquid outlet component comprises a plurality of first liquid outlets arranged at intervals in the circumferential direction, and the plurality of flow channels and the plurality of first liquid outlets are arranged one-to-one.

[0015] In some embodiments, the circumferential angle interval between every two adjacent flow channels is equal and is 5°.

[0016] In some embodiments, a bottom end inside the first wall body is provided with an annular liquid supply pipe communicated with the plurality of flow channels,

[0017] The annular liquid supply pipe is selectively communicated with a dry gas source.

[0018] The annular liquid supply pipe is selectively communicated with a dry gas source.

[0019] In some embodiments, the semiconductor cleaning shield device further comprises:

[0020] The third shield is arranged radially outside the first shield and is arranged at intervals with the first shield, the third shield is annular and coaxially surrounds the wafer, the third shield comprises a third wall body and a third bending portion, the third bending portion is arranged at a top end of the third wall body and is bent towards a direction close to the wafer, and a height difference between the top end of the first shield and the third bending portion is adjustable to switch the third shield and the first shield between the third working condition and the fourth working condition.

[0021] In the third working condition, the wafer is located between the third bending part and the first shield in the height direction, and the radially inner side wall surface of the third wall body is used to block the liquid drops spun out by the wafer, and in the fourth working condition, the top end of the first shield is attached to the third bending part, so that the third wall body, the third bending part and the first shield form a second cleaning space for the cleaning liquid to flow.

[0022] According to a second aspect of the present disclosure, a semiconductor cleaning device is provided, comprising:

[0023] a cleaning platform for carrying the wafer, the cleaning platform being rotatable; and

[0024] The semiconductor cleaning shield device in the above embodiments is arranged on the radially outer side of the cleaning platform.

[0025] The semiconductor cleaning shield device in the embodiments of the present disclosure has the advantages that the top end of the second shield is attached to the first bending part to form a first cleaning space, which is beneficial to improve the flushing strength of the cleaning liquid and improve the cleaning effect of the semiconductor cleaning shield device, and can improve the consistency and stability of the cleaning effect, and prevent the pollution of the wafer cleaning chamber caused by the overflow or back-splashing of the residues or cleaning liquid during the self-cleaning process of the shield; the cleaning of the radially inner side wall surface of the first wall body does not occupy the vacuum chuck and the conveying arm, does not affect other radially inner side wall surfaces, and can ensure the continuous high-quality wafer cleaning process, and the shield cleaning has little effect on the machine throughput; the self-cleaning of the semiconductor cleaning shield device does not require manual intervention for wiping, and can improve the self-cleaning efficiency and the automation level of the semiconductor cleaning device. BRIEF DESCRIPTION OF DRAWINGS

[0026] In order to more clearly illustrate the technical solutions in the embodiments of the present disclosure or the prior art, the following will briefly introduce the drawings needed to be used in the embodiments or prior art description. Obviously, the drawings in the following description are only some embodiments of the present disclosure, and other drawings can be obtained by those skilled in the art without creative labor.

[0027] Figure 1 A structure schematic diagram of a first working condition of some embodiments of the semiconductor cleaning shield device in the semiconductor cleaning device of the present disclosure.

[0028] Figure 2 A structure schematic diagram of a second working condition of some embodiments of the semiconductor cleaning shield device in the semiconductor cleaning device of the present disclosure.

[0029] Figure 3 A structure schematic diagram of some embodiments of the first shield and the one-way valve of the semiconductor cleaning shield device in the semiconductor cleaning device of the present disclosure.

[0030] Figure 4Fig. 1 is a schematic diagram of a state switching of a semiconductor cleaning shield device in a semiconductor cleaning apparatus according to the present disclosure, wherein (a1) and (a2) are a zeroth working condition, (b1) and (b2) are a first working condition, and (c1) and (c2) are a second working condition. In the figures, (a1), (b1) and (c1) are three-dimensional structure schematic diagrams, and (a2), (b2) and (c2) are two-dimensional structure schematic diagrams.

[0031] Reference signs:

[0032] 1, first shield; 2, second shield; 3, third shield; 4, fourth shield; 5, bottom wall; 6, liquid delivery arm; 10, first cleaning space; 11, first wall body; 110, annular liquid supply pipe; 111, one-way valve; 12, first liquid outlet component; 120, first liquid outlet; 13, first cleaning liquid flow pipeline; 130, flow channel; 31, third wall body; 32, third liquid outlet component; 320, third liquid outlet; 33, third cleaning liquid flow pipeline; 41, fourth wall body; 42, fourth liquid outlet component; 420, fourth liquid outlet; 43, fourth cleaning liquid flow pipeline; 51, first opening; 511, first discharge pipeline; 512, first recovery pipeline; 52, second opening; 521, second discharge pipeline; 522, second recovery pipeline; 53, third opening; 531, third discharge pipeline; 532, third recovery pipeline; 100, wafer; 101, cleaning platform; x, first direction. DETAILED DESCRIPTION

[0033] Various exemplary embodiments of the present disclosure will now be described in detail with reference to the accompanying drawings. The description of the exemplary embodiments is merely illustrative in nature and is in no way intended to limit the disclosure, its application or uses. The disclosure can be implemented in numerous different forms, not limited to the embodiments described herein. These embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the disclosure to those skilled in the art. It should be noted that the relative arrangement of the components and steps set forth in these embodiments, the components of the materials, numerical expressions, and numerical values, unless specifically stated otherwise, should be interpreted as merely exemplary, rather than as a limitation.

[0034] The terms "first", "second", and similar terms used in the present disclosure do not denote any order, number or importance, but are only used to distinguish different parts. The terms "comprise", "include" and similar terms mean that the elements before the term encompass the elements listed after the term, and do not exclude the possibility of also encompassing other elements. "Up", "down", "left", "right", and the like are only used to indicate relative positional relationships, which may also change accordingly when the absolute position of the described object changes.

[0035] In the present disclosure, when it is described that a specific device is located between a first device and a second device, there can or can not be an intervening device between the specific device and the first device or the second device. When it is described that a specific device is connected to another device, the specific device can be directly connected to the other device without an intervening device, or can not be directly connected to the other device with an intervening device.

[0036] All terms used in the present disclosure, including technical or scientific terms, have the same meanings as those understood by those skilled in the art to which the present disclosure pertains, unless otherwise specifically defined. It should also be understood that terms such as those defined in commonly used dictionaries should be interpreted as having a meaning that is consistent with their meaning in the context of the relevant art and not in an idealized or overly formal sense, unless expressly so defined herein.

[0037] Techniques, methods, and apparatus known to those of ordinary skill in the relevant art can not be discussed in detail, but should be considered as part of the specification where appropriate.

[0038] Based on the above-described embodiments of the present disclosure, the technical features of one of the embodiments can be beneficially combined with one or more of the other embodiments without explicit negation or conflict, if any.

[0039] The inventors found in the research process that, on the one hand, the number of cavities of the current machine is large, and the number of cavities of some models can reach more than twenty. Preventive maintenance (PM) wastes a lot of manpower, and when the machine runs to the end of PM, the inner side wall surface of the shield has generated residues. The residues splashed to the wafer surface before wiping will greatly increase the risk of yield loss. On the other hand, if the deionized water is sprayed to the surface of the vacuum chuck by the conveying arm, and the centrifugal force generated by high-speed rotation is used to realize cleaning and flushing, this process must be matched with the vacuum chuck and the conveying arm. The cavities cannot be used during the cleaning process of the side wall of the shield and must be idle, which reduces the throughput of the machine.

[0040] To solve at least one of the above problems, the present disclosure provides a semiconductor cleaning shield device, as shown in Figures 1 to 4 In some embodiments, the semiconductor cleaning shield device includes:

[0041] a first shield 1 in the shape of a ring coaxially surrounding a wafer 100, the first shield 1 including a first wall body 11 and a first bent portion, the first bent portion being provided at a top end of the first wall body 11 and being bent towards a direction close to the wafer 100; and

[0042] The second shield 2 is arranged radially inward of the first shield 1 and spaced apart from the first shield 1, the second shield 2 is annular and coaxially surrounds the wafer 100, the height difference between the top end of the second shield 2 and the first bending part is adjustable, so that the first shield 1 and the second shield 2 are switched between the first working condition and the second working condition;

[0043] In the first working condition, the wafer 100 is located between the first bending part and the second shield 2 along the height direction, the radially inner side wall surface of the first wall body 11 is used to block the liquid droplets spun out by the wafer 100, and in the second working condition, the top end of the second shield 2 is attached to the first bending part, so that the first wall body 11, the first bending part and the second shield 2 form a first cleaning space 10 for the cleaning liquid to flow.

[0044] Specifically, the first working condition is the working condition of the semiconductor cleaning equipment, and the radially inner side wall surface of the first wall body 11 is used to block the liquid droplets spun out by the wafer 100, and the second working condition is the cleaning condition of the radially inner side wall surface of the first shield 1, and the cleaning liquid flows in the first cleaning space 10 to clean the residues on the radially inner side wall surface of the first shield 1, and the residues can be viscous liquid or acid-base gas crystallization, etc.

[0045] Specifically, the top end of the second shield 2 is attached or abuts against the first bending part, so that the first cleaning space 10 is a closed space except for the cleaning liquid flowing in and out of the opening, which is beneficial to improve the flushing strength of the cleaning liquid and the cleaning effect of the cleaning liquid on the radially inner side wall surface; it can also prevent the cleaning liquid from overflowing from the top end of the second shield 2, and prevent the residues or cleaning liquid from polluting the wafer cleaning chamber during the cleaning process of the shield; it can thoroughly clean the inner side wall surface of each height, and has high cleaning efficiency and good cleaning effect.

[0046] Cleaning the radially inner side wall surface of the first wall body 11 neither occupies the vacuum chuck nor the conveying arm, and also does not affect the splashing of liquid droplets on the inner side wall surface except the radially inner side wall surface of the first wall body 11, that is, it does not affect the continuous progress of the wafer cleaning process. In the case that the first shield 1 and the second shield 2 are in the second working condition, the radially inner side wall of the second shield 2 can be used for the wafer cleaning process, or other shields higher than the top end of the first shield 1 can be arranged radially outward of the first shield 1 for the wafer cleaning process.

[0047] Optionally, the cleaning liquid for cleaning viscous liquid medicine or acid-base gas crystallization can be deionized water or any other cleaning liquid. Optionally, the first shield 1 and the second shield 2 can only have vertical portions, or can each include a vertical portion and a converging portion that gradually reduces the horizontal cross-sectional area of the shield from bottom to top, for example, the first wall body 11 and the second wall body each include a vertical portion and a converging portion. Optionally, the first shield 1 and the second shield 2 can be adjusted in height by lifting the top end of the second shield 2 relative to the first bent portion, or can be adjusted in height by telescoping the wall body in the height direction.

[0048] Optionally, the cleaning liquid entering the first cleaning space 10 can be sourced from the first bent portion, for example, the first bent portion includes a first liquid outlet component 12, or can be sourced from the bottom wall 5, for example, the bottom wall 5 is provided with an opening for spraying cleaning liquid upward, or can be sourced from other positions suitable for providing nozzles or openings.

[0049] Optionally, the first bent portion can adopt any structure for forming a cleaning space after being bent in a direction close to the wafer, for example, can be further bent downward, for example, bent in a direction close to the radial inner side wall surface of the first wall body 11, or can not be bent downward, for example, only bent horizontally toward the radial inner side. Optionally, the top end of the second shield 2 and the abutting surface of the first bent portion can be provided with an annular sealing member to improve the sealing effect of the first cleaning space 10 at the abutting surface.

[0050] Optionally, the second shield 2 can not include a liquid outlet component, only to seal the first cleaning space 10, or can include a liquid outlet component to cooperate with other structures to clean the radial inner side wall surface of the second shield 2, for example, the second shield 2 includes a second wall body and a second liquid outlet component, the second wall body is internally provided with a second cleaning liquid flow pipeline connected to the second liquid outlet component, and the second liquid outlet component is arranged at the top end of the second wall body and is bent in a direction close to the radial inner wall surface of the second wall body. The top end of the second shield 2 is the area of the top of the second shield 2, which can be the top end of the second wall body or the outer side wall of the second liquid outlet component. Optionally, the second shield 2 and the first shield 1 can be the same in structure, or can not be the same in structure.

[0051] The semiconductor cleaning shield device of the embodiment, the top end of the second shield 2 is attached to the first bending part to form the first cleaning space 10, which is conducive to improving the flushing strength of the cleaning liquid and improving the cleaning effect of the semiconductor cleaning shield device. At the same time, it can improve the consistency and stability of the cleaning effect, and prevent the overflow or back-splashing of residues or cleaning liquid during the self-cleaning process of the shield from causing pollution to the wafer cleaning chamber. The cleaning of the radial inner side wall surface of the first wall body 11 does not occupy the vacuum chuck and the conveying arm, and does not affect other radial inner side wall surfaces, so as to ensure the continuous high-quality performance of the wafer cleaning process, and the shield cleaning has little effect on the machine table cargo volume. The self-cleaning of the semiconductor cleaning shield device does not require manual intervention for wiping, and can improve the self-cleaning efficiency and the automation level of the semiconductor cleaning equipment.

[0052] In some embodiments, as shown in Figure 1 and Figure 2 , the first bending part is bent towards the direction close to the radial inner side wall surface of the first wall body 11, the first bending part includes a first liquid outlet component 12, and the first wall body 11 is internally provided with a first cleaning liquid flow pipeline 13 connected to the first liquid outlet component 12. In the second working condition, the first liquid outlet 120 of the first liquid outlet component 12 sprays cleaning liquid into the first cleaning space 10.

[0053] The cleaning liquid sprayed by the first liquid outlet component 12 can clean the radial inner side wall surface from top to bottom under the action of gravity, which is conducive to improving the flushing strength of the cleaning liquid and improving the cleaning effect of the cleaning liquid on the radial inner side wall surface, thereby improving the consistency and stability of the cleaning effect.

[0054] Specifically, the first cleaning liquid flow pipeline 13 is arranged in the interior of the first wall body 11, which can improve the space utilization rate, stabilize the flow of the cleaning liquid, and also avoid introducing defect sources due to excessive pipeline bending or additional pipeline arrangement, for example, impurities may be deposited at the corner of the pipeline, and the deposited impurities are carried by the cleaning liquid to the inner side wall, and then back-splashed to the wafer surface in the wafer cleaning process.

[0055] The first cleaning liquid flow pipeline 13 of the embodiment is arranged in the interior of the first wall body 11, which can improve the space utilization rate, stabilize the flow of the cleaning liquid, and also avoid introducing defect sources due to excessive pipeline bending or additional pipeline arrangement.

[0056] In some embodiments, as shown in Figure 4As shown in (a1) or (a2), the first shield 1 and the second shield 2 can also be in a zero-condition. In the zero-condition, the top of the second shield 2 is attached to the first liquid outlet component 12, so that the first wall 11, the first liquid outlet component 12, and the second shield 2 enclose the first cleaning space 10. However, the first liquid outlet 120 of the first liquid outlet component 12 does not spray cleaning fluid into the first cleaning space 10. The zero-condition is an idle condition, a standby condition, or a transfer condition, etc. In this condition, the top of the second shield 2 is attached to the first liquid outlet component 12, which can prevent dust and other contaminants from adhering to the radial inner wall surface of the first wall 11 during idle, standby, or transfer processes, thereby reducing the risk of contaminants being transferred and contaminating the wafer cleaning chamber or the wafer during the wafer cleaning process.

[0057] Optionally, whether the first outlet 120 sprays cleaning fluid can be achieved by opening or closing the first outlet 120, by switching the first cleaning fluid flow pipeline 13 on or off, or by switching the water pump or other drive components in the cleaning fluid supply pipeline on or off.

[0058] In some embodiments, the first shield 1 is liftable and / or the second shield 2 is liftable.

[0059] If the first shield 1 can be raised and lowered while the second shield 2 is fixed, in the initial state, the top of the second shield 2 is attached to the first liquid outlet component 12 and the first liquid outlet 120 does not spray out cleaning fluid. The first shield 1 can be raised to switch from the zero condition to the first condition. In the first condition, the first shield 1 is lowered until the top of the second shield 2 is attached to the first liquid outlet component 12 and the first liquid outlet 120 sprays out cleaning fluid, which can switch from the first condition to the second condition. At this time, other shields that do not affect the wafer cleaning process should be located on the radial outside of the first shield 1.

[0060] If the second shield 2 can be raised and lowered while the first shield 1 remains fixed, in the initial state, the top of the second shield 2 is attached to the first liquid outlet component 12 and the first liquid outlet 120 does not spray out cleaning fluid. The second shield 2 can be lowered to switch from the zero condition to the first condition. In the first condition, the second shield 2 rises until the top of the second shield 2 is attached to the first liquid outlet component 12 and the first liquid outlet 120 sprays out cleaning fluid, which can switch from the first condition to the second condition. At this time, other shields that do not affect the wafer cleaning process can be the second shield 2 or located on the radial inner side of the second shield 2.

[0061] In some embodiments, such as Figure 1 and Figure 2 As shown, the semiconductor cleaning shield device also includes:

[0062] The bottom wall 5 comprises a first opening 51 for liquid outflow, and the first shield 1 and the second shield 2 are arranged on the bottom wall 5. The first opening 51 is located radially between the first shield 1 and the second shield 2, and is selectively connected to the first discharge pipeline 511 or the first recovery pipeline 512.

[0063] The first shield 1 and / or the second shield 2 can penetrate the bottom wall 5 to realize a lifting function. In a first working condition, the first opening 51 is connected to the first recovery pipeline 512 to recover the liquid medicine spun out by the rotating wafer, thereby reducing production cost. In a second working condition, the first opening 51 is connected to the first discharge pipeline 511 to discharge and treat the waste liquid after cleaning.

[0064] The embodiment can switch the downstream pipeline according to the working condition and production needs by selectively connecting the first opening 51 to the first discharge pipeline 511 or the first recovery pipeline 512, thereby improving the production scene adaptability of the semiconductor cleaning shield device.

[0065] In some embodiments, as shown in Figure 2 and Figure 3 , along the first direction x, the flow passage size of the first cleaning liquid flow pipeline 13 is smaller than the thickness size of the first wall body 11. The first direction x can be a circumferential radial direction with the center axis of the wafer 100 as the center.

[0066] The flow passage size of the first cleaning liquid flow pipeline 13 is smaller than the thickness size of the first wall body 11, that is, the first cleaning liquid flow pipeline 13 is arranged inside the first wall body 11, which can improve the space utilization rate and stabilize the cleaning liquid flow.

[0067] In some embodiments, as shown in Figure 3 , the first cleaning liquid flow pipeline 13 comprises a plurality of flow channels 130 arranged at intervals in the circumferential direction, the main body part of the flow channel 130 extends in the height direction, the first liquid outlet component 12 comprises a plurality of first liquid outlets 120 arranged at intervals in the circumferential direction, and the plurality of flow channels 130 and the plurality of first liquid outlets 120 are arranged one-to-one.

[0068] This embodiment can more comprehensively and thoroughly clean the radial inner side wall surface of the first wall body 11 by arranging a plurality of flow channels 130, and the plurality of flow channels 130 can also realize redundancy design, which can still achieve good inner wall cleaning effect in the case of partial or complete blockage of a certain flow channel 130.

[0069] In some embodiments, the flow channel 130 is a circular through hole with a diameter in the range of 1-2 mm, and the thickness of the first wall body 11 is in the range of 3-4 mm.

[0070] In some embodiments, the circumferential angle between any two adjacent flow channels 130 is equal and is 5°, and the first wall 11 is provided with 72 flow channels 130.

[0071] In some embodiments, such as Figure 3 As shown, the bottom of the interior of the first wall 11 is provided with an annular liquid supply pipe 110 that connects to multiple flow channels 130.

[0072] The annular supply pipe 110 is connected to the cleaning fluid source. A one-way valve 111 is provided between the annular supply pipe 110 and the cleaning fluid source. The one-way valve 111 is configured to allow the cleaning fluid to flow unidirectionally from the cleaning fluid source to the annular supply pipe 110.

[0073] In this embodiment, the annular liquid supply pipe 110, in conjunction with multiple flow channels 130, can improve the stability of the cleaning fluid supply, and the one-way valve 111 can prevent the cleaning fluid in the flow channels 130 from flowing back when the protective cover is cleaned.

[0074] In some embodiments, the annular liquid supply pipe 110 may be selectively connected to a drying gas source, enabling the radially inner wall surface of the first wall 11 to be dried by the drying gas after the second cleaning cycle, so that the first shield can be restored to a usable state more quickly. The drying gas source may be used to provide drying nitrogen or the like.

[0075] In some embodiments, such as Figure 1 and Figure 2 As shown, the semiconductor cleaning shield device also includes:

[0076] The third shield 3 is located radially outside the first shield 1 and spaced apart from the first shield 1. The third shield 3 is annular and coaxially surrounds the wafer 100. The third shield 3 includes a third wall 31 and a third bend. The third bend is located at the top of the third wall 31 and bends toward the direction close to the wafer. The height difference between the top of the first shield 1 and the third bend is adjustable so that the third shield 3 and the first shield 1 can switch between a third working condition and a fourth working condition.

[0077] In the third operating condition, the wafer 100 is located between the third bend and the first shield 1 along the height direction. The radial inner side of the third wall 31 is used to block the droplets thrown out by the rotating wafer 100. In the fourth operating condition, the top of the first shield 1 is attached to the third bend so that the third wall 31, the third bend and the first shield 1 enclose a second cleaning space for the cleaning fluid to flow. The third operating condition is independent of the second operating condition, and the fourth operating condition is independent of the first operating condition.

[0078] The third shield 3 and the first shield 1 can also be in the zeroth working condition, the relationship between the third shield 3 and the first shield 1 is the same as the relationship between the first shield 1 and the second shield 2, and the height adjustment mechanism, the working condition switching mechanism, the cleaning liquid source and the wafer continuous cleaning mechanism are not repeated here.

[0079] The top end of the first shield 1 is the area of the top of the first shield 1, which can be the top end of the first wall body 11 or the first bending part.

[0080] In the third working condition, the wafer 100 is located between the third bending part and the first shield 1 in the height direction, that is, the wafer 100 is located between the third bending part and the highest point of the first shield 1 in the height direction. Depending on the bending mode of the first bending part or the position of the highest point, the highest point of the first shield 1 can be the top end of the first wall body 11 or the first bending part. If the first bending part bends upward first and then downward at the top end of the first wall body 11, the first bending part is at least partially higher than the top end of the first wall body 11, and the first bending part constitutes the highest point of the first shield 1. If the first bending part bends horizontally towards the radial inner side at the top end of the first wall body 11, both the top end of the first wall body 11 and the first bending part constitute the highest point of the first shield 1. If the first bending part bends directly downward at the top end of the first wall body 11, the top end of the first wall body 11 constitutes the highest point of the first shield 1.

[0081] Optionally, the third bending part bends towards the radial inner side wall surface close to the third wall body 31, the third bending part includes a third liquid outlet component 32, and the third wall body 31 is internally provided with a third cleaning liquid flow pipeline 33 connected to the third liquid outlet component 32. In the second working condition, the third liquid outlet 320 of the third liquid outlet component 32 sprays cleaning liquid into the second cleaning space. Optionally, the third shield 3 and the first shield 1 can have the same structure except for different heights and radial positions, and the structure and layout of the third cleaning liquid flow pipeline 33 in the third wall body 31 can be consistent with those of the first cleaning liquid flow pipeline 13.

[0082] In the case where the first shield 1 and the second shield 2 are in the second working condition, the third shield 3 and the first shield 1 can be in the third working condition, and in the case where the first shield 1 and the second shield 2 are in the first working condition, the third shield 3 and the first shield 1 can be in the fourth working condition, so that wafer cleaning and shield inner wall cleaning can be performed simultaneously, thereby significantly improving production efficiency. Since the cleaning platform 101 and the wafer 100 are arranged on the central axis and only one set is provided, the first working condition and the third working condition are mutually exclusive, but the second working condition and the fourth working condition can be performed simultaneously.

[0083] In some embodiments, as Figure 1 and Figure 2As shown, the third shield 3 is arranged on the bottom wall 5, penetrates the bottom wall 5 and is liftable, the bottom wall 5 comprises a second opening 52 for liquid outflow, the second opening 52 is located between the third shield 3 and the first shield 1 in the radial direction, and the second opening 52 is selectively communicated with the second discharge pipeline 521 or the second recovery pipeline 522.

[0084] In some embodiments, as shown in Figure 1 and Figure 2 The semiconductor cleaning shield device further comprises:

[0085] The fourth shield 4 is arranged radially outside and spaced apart from the third shield 3, the fourth shield 4 is annular and coaxially surrounds the wafer 100, the fourth shield 4 comprises a fourth wall body 41 and a fourth liquid outlet component 42, the fourth wall body 41 is internally provided with a fourth cleaning liquid flow pipeline 43 communicated with the fourth liquid outlet component 42, the fourth liquid outlet component 42 is arranged at the top end of the fourth wall body 41 and is bent towards the direction close to the wafer 100, and the height difference between the top end of the third shield 3 and the fourth liquid outlet component 42 is adjustable to switch the fourth shield 4 and the third shield 3 between the fifth working condition and the sixth working condition.

[0086] In the fifth working condition, the wafer 100 is located between the fourth liquid outlet component 42 and the third shield 3 in the height direction, the radially inner wall surface of the fourth wall body 41 is used to block the liquid droplets spun out by the wafer 100, in the sixth working condition, the top end of the third shield 3 is fitted to the fourth liquid outlet component 42, so that the fourth wall body 41, the fourth liquid outlet component 42 and the third shield 3 form a third cleaning space for the cleaning liquid to flow, the fourth liquid outlet 420 of the fourth liquid outlet component 42 sprays the cleaning liquid into the third cleaning space, the fifth working condition is independent of the second working condition and the fourth working condition, and the sixth working condition is independent of the first working condition and the third working condition.

[0087] The fourth shield 4 and the third shield 3 can also be in the zeroth working condition, the relationship between the fourth shield 4 and the third shield 3 is the same as that between the fourth shield 4 and the third shield 3, and the height adjustment mechanism, the working condition switching mechanism, the cleaning liquid source and the wafer continuous cleaning mechanism are not repeated here.

[0088] The top end of the third shield 3 is a region of the top of the third shield 3, and the top end of the third shield 3 can be the top end of the third wall body 31 or the third bending portion. In the fifth working condition, the wafer 100 is located between the fourth liquid outlet component 42 and the third shield 3 in the height direction, that is, the wafer 100 is located between the fourth liquid outlet component 42 and the highest point of the third shield 3 in the height direction. Optionally, the fourth bending portion is bent towards the radial inner side wall surface close to the fourth wall body 41, the fourth bending portion includes the fourth liquid outlet component 42, the fourth wall body 41 is internally provided with a fourth cleaning liquid flow pipeline 43 connected to the fourth liquid outlet component 42, and in the second working condition, the fourth liquid outlet 420 of the fourth liquid outlet component 42 sprays cleaning liquid into the third cleaning space. Optionally, the fourth shield 4 and the first shield 1 can be the same in structure except that the height and the radial position are different, and the structure layout of the fourth cleaning liquid flow pipeline 43 in the fourth wall body 41 can also be consistent with that of the first cleaning liquid flow pipeline 13.

[0089] In the case that the first shield 1 and the second shield 2 are in the second working condition and / or the third shield 3 and the first shield 1 are in the fourth working condition, the fourth shield 4 and the third shield 3 can be in the fifth working condition, and in the case that the first shield 1 and the second shield 2 are in the first working condition or the third shield 3 and the first shield 1 are in the third working condition, the fourth shield 4 and the third shield 3 can be in the sixth working condition, so that the wafer cleaning process and the cleaning of the inner wall of the shield can be simultaneously performed, and the production efficiency can be significantly improved. Since the cleaning platform 101 and the wafer 100 are arranged on the central axis and only one set is arranged, the fifth working condition and the first working condition and the third working condition are mutually exclusive, but the sixth working condition and the second working condition and the fourth working condition can be simultaneously performed.

[0090] In some embodiments, as shown in Figure 1 and Figure 2 , the fourth shield 4 is arranged on the bottom wall 5, the fourth shield 4 penetrates the bottom wall 5 and the fourth shield 4 is liftable, the bottom wall 5 includes a third opening 53 for liquid outflow, the third opening 53 is located between the fourth shield 4 and the third shield 3 in the radial direction, and the third opening 53 is selectively connected to a third discharge pipeline 531 or a third recovery pipeline 532.

[0091] In the wafer cleaning process, the types of the chemical solutions flowing through the first opening 51, the second opening 52 and the third opening 53 can be the same or different, for example, any two of the three openings are used to collect a first type of chemical solution, and the other opening is used to collect a second type of chemical solution.

[0092] Secondly, the disclosure also proposes a semiconductor cleaning equipment, as shown in Figures 1 to 4 , comprising:

[0093] a cleaning platform 101 for carrying a wafer 100, the cleaning platform 101 being rotatable; and

[0094] The semiconductor cleaning shield device of the above embodiment is arranged at the radial outer side of the cleaning platform 101. The cleaning platform 101 can include a vacuum chuck or the like.

[0095] The semiconductor cleaning apparatus further includes a liquid delivery arm 6. During the wafer cleaning process, the wafer 100 is driven to rotate at a high speed by the cleaning platform 101, and the chemical liquid is sprayed to the wafer surface by the liquid delivery arm 6 to clean the wafer. The chemical liquid thrown out falls on the radial inner wall surface of the first shield 1 or the third shield 3 or the fourth shield 4, and is correspondingly recovered or discharged through the first opening 51 or the second opening 52 or the third opening 53.

[0096] The semiconductor cleaning apparatus of the embodiment has the semiconductor cleaning shield device with the self-cleaning function. The self-cleaning effect of the semiconductor cleaning shield device is good, and the consistency and stability of the cleaning effect are high. The semiconductor cleaning shield device can avoid the pollution of the wafer cleaning chamber by the residual or cleaning liquid. The semiconductor cleaning shield device does not occupy the cleaning platform 101 and the liquid delivery arm 6 during the self-cleaning process, so that the wafer cleaning process can be continuously and high-qualityly carried out, and the machine throughput is improved by avoiding the shutdown of the shield cleaning process.

[0097] The semiconductor cleaning shield device and the semiconductor cleaning apparatus provided by the present disclosure are described in detail above. The principles and implementation manners of the present disclosure are described by applying specific embodiments. The above description of the embodiments is only used to help understand the method of the present disclosure and its core idea. It should be noted that, for those skilled in the art, without departing from the principles of the present disclosure, the present disclosure can be improved and modified in several ways. These improvements and modifications also fall within the protection scope of the claims of the present disclosure.

Claims

1. A semiconductor cleaning shield device, characterized in that, include: The first shield (1) is annular and coaxially surrounds the wafer (100). The first shield (1) includes a first wall (11) and a first bend. The first bend is located at the top of the first wall (11) and bends toward the direction close to the wafer (100). and The second shield (2) is located radially inside the first shield (1) and spaced apart from the first shield (1). The second shield (2) is annular and coaxially surrounds the wafer (100). The height difference between the top of the second shield (2) and the first bend is adjustable so that the first shield (1) and the second shield (2) can switch between the first working condition and the second working condition. In the first operating condition, the wafer (100) is located between the first bend and the second shield (2) along the height direction. The radial inner wall of the first wall (11) is used to block the droplets thrown out by the rotating wafer (100). In the second operating condition, the top of the second shield (2) is attached to the first bend, so that the first wall (11), the first bend and the second shield (2) enclose a first cleaning space (10) for the cleaning fluid to flow.

2. The semiconductor cleaning shield device according to claim 1, characterized in that, The first protective cover (1) is liftable and / or the second protective cover (2) is liftable.

3. The semiconductor cleaning shield device according to claim 1, characterized in that, Also includes: The bottom wall (5) includes a first opening (51) for liquid outflow, the first shield (1) and the second shield (2) are both provided on the bottom wall (5), the first opening (51) is located between the first shield (1) and the second shield (2), and the first opening (51) is optionally connected to a first discharge pipe (511) or a first recovery pipe (512).

4. The semiconductor cleaning shield device according to claim 1, characterized in that, The first bending part bends toward the radial inner wall surface close to the first wall (11). The first bending part includes a first liquid outlet component (12). The first wall (11) is provided with a first cleaning fluid flow pipe (13) connected to the first liquid outlet component (12). In the second working condition, the first liquid outlet (120) of the first liquid outlet component (12) sprays cleaning fluid into the first cleaning space (10).

5. The semiconductor cleaning shield device according to claim 4, characterized in that, Along the first direction (x), the cross-sectional dimension of the first cleaning fluid flow pipe (13) is smaller than the thickness dimension of the first wall (11).

6. The semiconductor cleaning shield device according to claim 4, characterized in that, The first cleaning fluid flow pipeline (13) includes a plurality of flow channels (130) arranged circumferentially. The main body of the flow channel (130) extends along the height direction. The first liquid outlet component (12) includes a plurality of first liquid outlets (120) arranged circumferentially. The plurality of flow channels (130) and the plurality of first liquid outlets (120) are arranged one-to-one.

7. The semiconductor cleaning shield device according to claim 6, characterized in that, The circumferential angle between any two adjacent flow channels (130) is equal and is 5°.

8. The semiconductor cleaning shield apparatus according to claim 6, characterized in that, The bottom of the first wall (11) is provided with an annular liquid supply pipe (110) that is connected to a plurality of flow channels (130). The annular supply pipe (110) is connected to a cleaning fluid source, and a one-way valve (111) is provided between the annular supply pipe (110) and the cleaning fluid source. The one-way valve (111) is configured to allow the cleaning fluid to flow unidirectionally from the cleaning fluid source to the annular supply pipe (110); and / or The annular liquid supply pipe (110) can be selectively connected to a drying gas source.

9. The semiconductor cleaning shield apparatus according to any one of claims 1 to 8, characterized in that, Also includes: The third shield (3) is located radially outside the first shield (1) and spaced apart from the first shield (1). The third shield (3) is annular and coaxially surrounds the wafer (100). The third shield (3) includes a third wall (31) and a third bend. The third bend is located at the top of the third wall (31) and bends toward the direction close to the wafer (100). The height difference between the top of the first shield (1) and the third bend is adjustable so that the third shield (3) and the first shield (1) can switch between a third working condition and a fourth working condition. In the third operating condition, the wafer (100) is located between the third bend and the first shield (1) along the height direction. The radial inner wall of the third wall (31) is used to block the droplets thrown out by the rotating wafer (100). In the fourth operating condition, the top of the first shield (1) is attached to the third bend, so that the third wall (31), the third bend and the first shield (1) enclose a second cleaning space for the cleaning fluid to flow.

10. A semiconductor cleaning apparatus, characterized in that, include: A cleaning platform (101) is used to hold a wafer (100), and the cleaning platform (101) is rotatable; and The semiconductor cleaning shield device according to any one of claims 1 to 9 is disposed on the radial outer side of the cleaning platform (101).

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