Thermal management system and method for semiconductor device

Abstract

The present technology relates to thermal management systems and methods for semiconductor devices. In an embodiment, a semiconductor device includes an interposer including a first side and a second side. The first side is opposite to the second side. The apparatus further includes a first circuit coupled to the first side and a second circuit coupled to the second side. The apparatus further includes a first layer coupled to the first circuit and a second layer coupled to the second circuit. The second layer is configured to dissipate heat generated by the second circuit. This configuration improves overall efficiency and reliability of the semiconductor device by providing a direct thermal path for heat dissipation to enhance thermal management. In addition, elimination of thermal vias simplifies PCB layout, allowing for a more compact and cost-effective design.

Description

[0001] Cross-reference of related applications

[0002] This application claims priority to U.S. Provisional Application No. 63 / 658,964, filed June 12, 2024, which is jointly owned and incorporated herein by reference for all purposes. Technical Field

[0003] This technology relates to semiconductor devices. Background Technology

[0004] Effective thermal management is critical for the performance and reliability of semiconductor devices, especially those used in high-power applications. Over the past decade, the demand for more powerful and compact electronic devices has driven the need for advanced thermal management solutions. Some approaches involve using thermal vias for heat dissipation, which are often insufficient due to their limited thermal conductivity and the complexity they introduce in printed circuit board (PCB) layouts. These methods fail to provide effective thermal paths, leading to potential overheating of semiconductor components and reduced reliability.

[0005] Various methods have been explored to improve thermal management in semiconductor devices, but these methods are often insufficient. It is important to recognize the need for new and improved thermal management methods and systems. Summary of the Invention

[0006] In one aspect, this disclosure relates to a semiconductor device comprising: an interposer including a first side and a second side, the first side being opposite to the second side; a first circuit coupled to the first side, the first circuit including a first radio frequency (RF) component; a second circuit coupled to the second side, the second circuit including a second RF component; a first layer coupled to the first circuit, the first layer including a first molding material; and a second layer coupled to the second circuit, the second layer being configured to dissipate heat generated by the second circuit.

[0007] On the other hand, this disclosure relates to a semiconductor device comprising: an interposer including a first side and a second side, the first side being opposite to the second side; a first circuit coupled to the first side; a second circuit coupled to the second side; a first layer coupled to the first circuit, the first layer including a first molding material; a second layer coupled to the second circuit, the second layer including a second molding material; and a third layer coupled to the second circuit, the third layer being configured to dissipate heat generated by the second circuit.

[0008] On the other hand, this disclosure relates to a semiconductor device comprising: an interposer including a first side and a second side, the first side being opposite to the second side; a first circuit coupled to the first side, the first circuit including a first radio frequency (RF) component; a second circuit coupled to the second side, the second circuit including a second RF component; a first layer coupled to the first circuit, the first layer including a first molding material; a second layer coupled to the second circuit, the second layer including a second molding material; and a third layer coupled to the second layer, the third layer being configured to dissipate heat generated by the second circuit. Attached Figure Description

[0009] A further understanding of the nature and advantages of particular embodiments can be achieved by referring to the remainder of the specification and the accompanying drawings, in which the same reference numerals are used to refer to similar components. In some instances, sublabels are associated with reference numerals to indicate one of a plurality of similar components. When reference numerals are referenced without specifying existing sublabels, they are intended to refer to all such plurality of similar components.

[0010] Figure 1 This is a schematic cross-sectional view of a semiconductor device according to various embodiments of the present technology.

[0011] Figure 2 This is a schematic cross-sectional view of a semiconductor device according to various embodiments of the present technology.

[0012] Figure 3 This is a schematic cross-sectional view of a semiconductor device according to various embodiments of the present technology.

[0013] Figure 4 This is a schematic cross-sectional view of a semiconductor device according to various embodiments of the present technology.

[0014] Figure 5 This is a schematic cross-sectional view of a semiconductor device according to various embodiments of the present technology.

[0015] Figure 6 This is a schematic cross-sectional view of a semiconductor device according to various embodiments of the present technology.

[0016] Figure 7 This is a schematic cross-sectional view of a semiconductor device according to various embodiments of the present technology.

[0017] Figure 8 This is a schematic cross-sectional view of a semiconductor device according to various embodiments of the present technology. Detailed Implementation

[0018] This technology relates to semiconductor devices and methods thereof. In an embodiment, the semiconductor device includes an interposer layer comprising a first side and a second side. The first side and the second side are opposite to each other. The device further includes a first circuit coupled to the first side and a second circuit coupled to the second side. The device further includes a first layer coupled to the first circuit and a second layer coupled to the second circuit. The second layer is configured to dissipate heat generated by the second circuit. This configuration enhances thermal management by providing a direct thermal path for heat dissipation, improving the overall efficiency and reliability of the semiconductor device. Additionally, the elimination of thermal vias simplifies PCB layout, allowing for more compact and cost-effective designs.

[0019] The following description is presented to enable those skilled in the art to make and use the invention, and is incorporated into the context of a particular application. Those skilled in the art will readily understand various modifications and uses in different applications, and the general principles defined herein are applicable to a wide range of embodiments. Therefore, the invention is not intended to be limited to the presented embodiments, but should be accorded the widest scope consistent with the principles and novel features disclosed herein.

[0020] The following detailed description sets forth numerous specific details to provide a more thorough understanding of the present invention. However, those skilled in the art will understand that the present invention is practicable and is not necessarily limited to these specific details. In other examples, well-known structures and devices are shown in block diagrams rather than in detail to avoid obscuring the present invention.

[0021] This specification draws the reader's attention to all papers and documents submitted concurrently with and made publicly available for examination, the contents of which are incorporated herein by reference. Unless otherwise expressly stated, all features disclosed in this specification (including any accompanying claims, abstract, and drawings) may be replaced by alternative features for the same, equivalent, or similar purposes. Therefore, unless otherwise expressly stated, each disclosed feature is merely one example of a general series of equivalent or similar features.

[0022] Furthermore, any element that does not expressly state in the claims as performing a specified function or a "step" performing a specific function shall not be construed as a "component" or "step" as defined in paragraph 6 of section 112 of 35 U.S.SC. Specifically, the use of "step" or "action" in the claims herein is not intended to reference the provisions of paragraph 6 of 35 U.S.SC.

[0023] When an element is referred to herein as “connected” or “coupled” to another element, it should be understood that the element may be directly connected to the other element, or that there may be an intermediary element present between the elements. Conversely, when an element is referred to as “directly connected” or “directly coupled” to another element, it should be understood that there is no intermediary element in a “direct” connection between the elements. However, the presence of a direct connection does not preclude the existence of other connections in which intermediary elements may be present.

[0024] When an element is referred to herein as being "positioned" relative to another element in a certain way (e.g., positioned on it, between it, below it, near it, or in some other relative manner), it should be understood that the element may be positioned directly relative to the other element (e.g., directly on it) or may have an intervening element present between the elements. Conversely, when an element is referred to as being "directly positioned" relative to another element, it should be understood that in the "direct" instance, there is no intervening element. However, the presence of direct positioning does not preclude other instances in which an intervening element may be present.

[0025] Similarly, when an element is referred to herein as being “joined” to another element, it should be understood that the element may be directly joined to the other element (without any intermediary element) or has an intermediary element present between the joined elements. Conversely, when an element is referred to as being “directly joined” to another element, it should be understood that there is no intermediary element in the “direct” joint between the elements. However, the presence of a direct joint does not preclude other forms of joint in which an intermediary element may be present.

[0026] Similarly, when an element is referred to herein as a “layer,” it should be understood that the layer may be a single layer or comprise multiple layers. For example, a conductive layer may comprise multiple different conductive materials or multiple layers of different conductive materials, and a dielectric layer may comprise multiple dielectric materials or multiple layers of dielectric materials. When a layer is described as coupled or connected to another layer, it should be understood that the coupled or connected layer may contain intermediary elements present between the coupled or connected layers. Conversely, when a layer is referred to as being “directly” connected or coupled to another layer, it should be understood that there are no intermediary elements between the layers. However, the presence of directly coupled or connected layers does not preclude the existence of other connections where intermediary elements may be present.

[0027] Furthermore, the terms left, right, front, back, top, bottom, forward, reverse, clockwise, and counterclockwise are used for interpretive purposes only and are not limited to any fixed direction or orientation. Rather, they are used only to indicate the relative position and / or orientation between the various parts of an object and / or component.

[0028] Furthermore, for ease of description, the methods and processes described herein may be described in a specific order. However, it should be understood that unless the context otherwise indicates, intermediate processes may occur before and / or after any part of the described processes, and various other processes may be reordered, added, and / or omitted according to various embodiments.

[0029] Unless otherwise indicated, all figures used herein to express quantity, size, etc., should be understood to be modified by the term “about” in all instances. In this application, unless specifically stated otherwise, the use of the singular includes the plural, and unless otherwise indicated, the use of the terms “and” and “or” means “and / or”. Furthermore, the use of the terms “including” and “having,” as well as other forms such as “includes,” “included,” “has,” “have,” and “had,” should be considered non-exclusive. Additionally, terms such as “element” or “component” cover both elements and components comprising one unit and elements and components comprising more than one unit, unless otherwise specifically stated.

[0030] As used herein, the phrase "at least one" preceding a series of items separated by the terms "and" or "or" modifies the entire list, not each member of the list (i.e., each item). The phrase "at least one" does not require selection of at least one of every listed items; rather, the phrase allows for the inclusion of at least one of any item and / or at least one of any combination of items. For example, the phrases "at least one of A, B, and C" or "at least one of A, B, or C" each refer to only A, only B, or only C; and / or any combination of A, B, and C. In examples where the selection is intended to be "at least one of each of A, B, and C," or alternatively, "at least one of A, at least one of B, and at least one of C," it is explicitly described as such.

[0031] Figure 1 This is a schematic cross-sectional view of a semiconductor device 100 according to various embodiments of the present technology. This figure is merely illustrative and should not unduly limit the scope of the claims. Many variations, alternatives, and modifications will be recognized by those skilled in the art.

[0032] Semiconductor device 100 may include semiconductor modules designed for various applications, such as radio frequency (RF) communications, data processing, power management, and / or the like. For example, in RF applications, the semiconductor module may be configured to manage signal transmission and reception, noise filtering, signal amplification, and / or the like. In some embodiments, the semiconductor module may be a double-sided module, which may refer to an assembly in which components are mounted on both the top and bottom surfaces of a substrate. This configuration allows for compact and efficient use of space, which is advantageous in high-performance, space-constrained applications such as mobile devices, industrial automation, and consumer electronics.

[0033] As shown, semiconductor device 100 includes an interposer 108. For example, the term "interposer" can refer to a layer that facilitates electrical connections and mechanical support between different components within a semiconductor device. Interposers can be made of various materials and can be used for various functions, such as signal routing, power distribution, and thermal management. Examples of interposers include, but are not limited to, PCBs, low-temperature co-fired ceramics (LTCC), high-temperature co-fired ceramics (HTCC), semiconductor materials (e.g., silicon (Si) or gallium arsenide (GaAs)), and / or the like. Interposer 108 includes a first side and a second side. The first side may be positioned opposite the second side. For the purposes of this description, the first side may also be referred to as the top side, upper side, or upper surface. The second side may be referred to as the bottom side, lower side, underside, or rear side. These terms are used interchangeably throughout this description to describe various embodiments and are not intended to limit the scope of the technology.

[0034] In some embodiments, the semiconductor device 100 further includes a surface mount technology (SMT) component 102. For example, the term "SMT component" can refer to an electronic device that is directly mounted to the surface of a substrate or interposer without the need for via connections to achieve electrical or mechanical bonding. The SMT component 102 may include, but is not limited to, resistors, capacitors, diodes, transistors, inductors, filters, and / or the like. In some cases, the SMT component 102 may be coupled to a first side of the interposer 108. It should be noted that the inclusion of the SMT component 102 is not necessarily required in every embodiment and may vary depending on design requirements. Therefore, the claims do not limit the semiconductor device to embodiments that include the SMT component.

[0035] According to some embodiments, the semiconductor device 100 further includes a first circuit 104 coupled to a first side of the interposer 108. For example, the term "circuit" can refer to an arrangement of electronic components designed to perform a specific function or a set of functions. Examples of circuits may include, but are not limited to, amplifier circuits, oscillator circuits, filter circuits, switching circuits, signal processing circuits, and / or the like. In some cases, the circuit may include a die or a portion of a die. The term "die" can refer to a small piece of semiconductor material on which functional circuitry is fabricated. In various instances, the first circuit 104 may include a first RF component. The term "RF component" can refer to any electronic component or circuit used in radio frequency applications to process or control RF signals. Examples of RF components may include, but are not limited to, filter circuits (e.g., bandpass filters, high-pass filters, low-pass filters), low-noise amplifier (LNA) circuits, power amplifier (PA) circuits, switching circuits, coupler circuits, logic circuits, transmit filters, receive filters, power amplifiers, antennas, band selection switches, and / or the like. In some instances, the first circuit 104 includes a receive (Rx) filter. The term "receiver filter" can refer to an electronic filter designed to receive and process input signals within a specific frequency range while rejecting unwanted signals. Examples of Rx filters include, but are not limited to, bandpass filters, high-pass filters, low-pass filters, surface acoustic wave (SAW) filters, bulk acoustic wave (BAW) filters, thin-film bulk acoustic wave resonator (FBAR) filters, solid-mount resonator bulk acoustic wave (SMRBAW) filters, silicon-based surface acoustic wave (SiSAW) filters, temperature-compensated surface acoustic wave (TCSAW) filters, dielectric filters, and / or the like. Receiver filters are used to isolate desired signals from a range of received signals, ensuring signal quality is maintained for further processing.

[0036] In various embodiments, the semiconductor device 100 further includes a layer 101 that can be coupled to the first circuit 104. For example, layer 101 includes a molding material. The term "molding material" can refer to an encapsulation material used to protect and insulate electronic components. Examples of molding materials may include, but are not limited to, epoxy molding compounds (EMC), silicone molding compounds (SMC), phenolic molding compounds, polyimide molding compounds, and / or the like. Molding materials can be used to encapsulate electronic components (e.g., the first circuit 104, the second circuit 103) and protect them from physical damage, moisture, dust, and other environmental factors.

[0037] In various instances, the semiconductor device 100 further includes a second circuit 103 coupled to a first side of the interposer 108. The second circuit 103 may include RF components. For example, the second circuit 103 may include, but is not limited to, transmission (Tx) filters, time-division duplex (TDD) filters, amplifiers, and / or the like. The term "transmission filter" can refer to an electronic filter designed to transmit signals within a specific frequency range during transmission while blocking unwanted frequencies. Examples of Tx filters may include, but are not limited to, bandpass filters, high-pass filters, low-pass filters, SAW filters, BAW filters, FBAR filters, SMRBAW filters, SiSAW filters, TCSAW filters, dielectric filters, and / or the like. Tx filters are used to shape and limit the bandwidth of the transmitted signal to ensure compliance with regulatory standards and to minimize interference with other signals.

[0038] In various instances, the semi-thin conductor device 100 further includes a substrate 109, which can be coupled to a second side of the interposer 108 via interconnects 110. For example, the term "substrate" can refer to a base layer that supports and electrically connects various components of a semiconductor device. Substrate 109 can serve as a motherboard or include a ground paddle as part of the motherboard, providing a stable platform for mounting and connecting components. The term "interconnect" can refer to a structure or mechanism that electrically connects two or more layers or components in a semiconductor device. Interconnect 110 can include, but is not limited to, metal traces, solder bumps, conductive adhesive, wire bonding, through-silicon vias (TSVs), and / or the like. Depending on the embodiment, substrate 109 can be considered part of the semiconductor device 100 or used as a separate component to provide mechanical support and electrical connectivity to the semiconductor device 100. For example, substrate 109 can include, but is not limited to, a PCB, a silicon wafer, a ceramic substrate, and / or the like.

[0039] Substrate 109 also plays a role in thermal management by helping to dissipate heat generated by components on interposer 108. It may include thermal pads or heat sinks to aid in effective heat dissipation. The integration of high-power components (e.g., first circuit 104, second circuit 103) on the first side of interposer 108 requires effective thermal management to ensure optimal performance and reliability. For example, the term "high power" can refer to components that handle high power levels (e.g., in the range of several watts to tens of watts), resulting in significant heat generation. In some cases, it can refer to components designed to operate at power levels 20 to 50% higher than standard low-power circuits. In various embodiments, first circuit 104 and second circuit 103 may be 200 to 250 μm thick, which increases the challenge of managing heat dissipation when the two circuits are placed on the same side (e.g., the first side). The close proximity of these high-power components can lead to localized hot spots, exacerbating thermal resistance problems. Insufficient heat dissipation leads to increased thermal resistance, affecting device efficiency and lifespan.

[0040] Some thermal management methods involve using thermal vias and thermal pads to conduct heat away from heat-generating components (e.g., first circuit 104, second circuit 103) and transfer it to the motherboard thermal ground (e.g., substrate 109). For example, semiconductor device 100 further includes vias 105. The term "via" or "thermal via" can refer to a conductive path connecting different layers of a substrate. In some instances, via 105 extends through an interposer 108, providing an electrical and thermal connection between a first side and a second side of the interposer 108. This connection helps conduct heat from high-power components to the other side of the substrate, where heat can be dissipated more effectively.

[0041] For maximum heat transfer, via 105 must be positioned directly beneath the second circuit 103. In some cases, additional interconnects on the rear side of the module (e.g., interconnect 110) may be required to provide better thermal anchoring for any residual heat generated by the second circuit 103. However, this approach has limitations. The thermal conductivity of via 105 is limited by its material properties and cross-sectional area, which limits the amount of heat that can be effectively transferred. Furthermore, integrating thermal vias into the PCB layout introduces complexity, as they require precise placement and sufficient spacing to avoid electrical interference and maintain structural integrity. Despite the use of thermal paths, the total thermal resistance can still be high, impacting heat dissipation efficiency and potentially affecting the performance and reliability of the semiconductor device 100.

[0042] Depending on the application, the semiconductor device 100 may further include a third circuit 106 that may be coupled to the interposer 108. For example, the third circuit 106 may include a low-noise amplifier (LNA). The term "low-noise amplifier" refers to a type of electronic amplifier designed to amplify weak electrical signals while introducing minimal additional noise. LNAs are used to improve receiver sensitivity by amplifying the received signal without significantly degrading the signal-to-noise ratio (SNR), thereby enhancing the overall performance of a communication system.

[0043] In some embodiments, the third circuit 106 includes a Mobile Industry Processor Interface (MIPI) controller. The term "MIPI controller" can refer to a component that facilitates high-speed communication between the main processor in a mobile device and peripheral components (e.g., cameras, displays, sensors, etc.). The MIPI controller manages data transmission between these components, ensuring efficient and reliable communication.

[0044] In various embodiments, the semiconductor device 100 further includes a fourth circuit 107 that may be coupled to the interposer 108. For example, the fourth circuit 107 may include a switch. The term "switch" or "switch circuit" may refer to an electronic component that controls the flow of electrical signals within a circuit. The fourth circuit 107 may include, but is not limited to, an RF switch, a power switch, a signal switch, and / or the like. The fourth circuit 107 allows selection between different signal paths, enabling the device to switch between antennas, frequency bands, or communication standards as needed. This flexibility is advantageous in modern communication systems where the device operates across multiple frequency bands and standards (e.g., 4G, 5G, Wi-Fi, Bluetooth, etc.).

[0045] Figure 2 This is a schematic cross-sectional view of a semiconductor device 200 according to various embodiments of the present technology. This figure is merely illustrative and should not unduly limit the scope of the claims. Many variations, alternatives, and modifications will be recognized by those skilled in the art. In various embodiments, the semiconductor device 200 may include at least one of layer 201, SMT assembly 202, first circuit 204, second circuit 203, layer 205, third circuit 206, fourth circuit 207, interposer 208, substrate 209, and / or the like.

[0046] Similar to Figure 1 The semiconductor device 100 has an interposer 208 comprising a first side and a second side. The first side may be opposite to the second side. A first circuit 204 may be coupled to the first side of the interposer 208. The first circuit 204 may include RF components. In some instances, the first circuit 204 includes an Rx filter, which may be configured to isolate a desired signal from a series of received signals, ensuring that signal quality is maintained for further processing. Examples of Rx filters may include, but are not limited to, bandpass filters, high-pass filters, low-pass filters, SAW filters, BAW filters, FBAR filters, SMRBAW filters, SiSAW filters, TCSAW filters, dielectric filters, and / or the like.

[0047] In various embodiments, layer 201 may be coupled to the first circuit 204. For example, layer 201 may comprise a molding material configured to encapsulate the first circuit 204, protecting it from physical damage, moisture, dust, and other environmental factors. Examples of molding materials may include, but are not limited to, EMC, SMC, phenolic molding compounds, polyimide molding compounds, and / or the like.

[0048] like Figure 2As shown, the second circuit 203 is coupled to the second side of the interposer 208. The second circuit 203 may include RF components. For example, the second circuit 203 may include, but is not limited to, Tx filters, time-division duplex (TDD) filters, amplifiers, and / or the like. Examples of Tx filters may include, but are not limited to, bandpass filters, high-pass filters, low-pass filters, SAW filters, BAW filters, FBAR filters, SMRBAW filters, SiSAW filters, TCSAW filters, dielectric filters, and / or the like. Tx filters are used to shape and limit the bandwidth of the transmitted signal to ensure compliance with regulatory standards and to minimize interference with other signals.

[0049] By positioning the second circuit 203 (e.g., a Tx filter) on the second side of the interposer 208, heat generated by this component can be dissipated directly through the rear side, reducing the thermal load on the top side where the first circuit 204 (e.g., an Rx filter) is located. This separation of high-power components improves the overall thermal balance within the semiconductor device 200, thereby enhancing performance and reliability. Furthermore, this configuration eliminates the need for thermal vias (which would otherwise be required to conduct heat from the top side to the rear side), simplifying PCB layout and potentially reducing manufacturing costs.

[0050] In various instances, the second circuit 203 is characterized by a thickness of less than or equal to 120 μm. In some cases, the thickness of the second circuit 203 can range from 40 to 60 μm. The process of thinning the second circuit 203 involves several steps to ensure that the component maintains its functionality and reliability despite the reduction in thickness. As an example, this thinning can be relative to the initial thickness of the circuit, which for a standard filter can range from 200 to 250 μm. In some instances, this process begins with the initial attachment of the Tx filter to the interposer 208 (e.g., via flip-chip bonding). Subsequently, the Tx filter is thinned using various techniques (e.g., polishing or chemical mechanical planarization (CMP) techniques) until the desired thickness is achieved. In addition to thinning, other manufacturing techniques can also be used to achieve the desired thickness range. Thinning the Tx filter reduces thermal resistance, allowing for more efficient heat dissipation to ensure optimal performance. Furthermore, reducing the thickness of the Tx filter promotes a lower profile of the semiconductor module, which is advantageous in space-constrained applications such as mobile devices and other compact electronic systems.

[0051] In various embodiments, the semiconductor device 200 further includes a substrate 209 that can be coupled to a second side of the interposer 208. The substrate 209 may include, but is not limited to, a PCB, a silicon wafer, a ceramic substrate, and / or the like. Depending on the implementation, the substrate 209 may be coupled to the interposer 208 via various interconnect structures, including, but not limited to, metal traces, solder bumps, conductive adhesives, wire bonds, TSVs, and / or the like. In some cases, the substrate 209 may include a thermal pad, a heat sink, or other heat dissipation structure to enhance thermal conductivity and facilitate efficient heat transfer away from the semiconductor device 200.

[0052] In some embodiments, the semiconductor device 200 further includes a layer 205 coupled to the second circuit 203. Layer 205 may be configured to dissipate heat generated by the second circuit 203. For example, layer 205 may include a thermally conductive layer. The term "thermally conductive layer" may refer to a layer made of a material having high thermal conductivity, designed to effectively transfer heat away from heat-generating components. Layer 205 may include, but is not limited to, metal foil (e.g., copper, aluminum, etc.), graphite sheets, thermally conductive polymers, and / or the like. In some cases, layer 205 may be characterized by a thickness of 50 μm or less.

[0053] In some instances, layer 205 is characterized by a thermal conductivity greater than or equal to 50 W / (m*K). By positioning the second circuit 203 on the rear side, heat generated by the high-power components can be directly transferred to layer 205, which effectively conducts heat away from the circuitry. This configuration not only enhances thermal management but also reduces thermal stress on the top-side components, thereby improving the overall thermal balance and reliability of the semiconductor device 200.

[0054] According to some embodiments, the semiconductor device 200 may further include a third circuit 206 that may be coupled to the interposer 208. For example, the third circuit 206 includes an LNA that may be configured to improve receiver sensitivity by amplifying the received signal without significantly degrading the SNR, thereby enhancing the overall performance of the communication system. In some instances, the third circuit 206 includes a MIPI controller that may be configured to manage data transmission between the main processor and peripheral components (e.g., cameras, displays, sensors, etc.) to ensure effective and reliable communication.

[0055] In various embodiments, the semiconductor device 200 further includes a fourth circuit 207 that may be coupled to the interposer 208. For example, the fourth circuit 207 may include a switch that allows selection between different signal paths, enabling the device to switch between antennas, frequency bands, or communication standards as needed. The fourth circuit 207 may include, but is not limited to, RF switches, power switches, signal switches, and / or the like.

[0056] Figure 3 This is a schematic cross-sectional view of a semiconductor device 300 according to various embodiments of the present technology. This figure is merely illustrative and should not unduly limit the scope of the claims. Many variations, alternatives, and modifications will be recognized by those skilled in the art. In various embodiments, the semiconductor device 300 includes at least one of a first layer 301, an interposer 303, a second layer 302, a first circuit 304, a second circuit 305, an SMT assembly 306, a substrate 307, a via 308, a substrate pad 311, a first interconnect 310, and / or the like.

[0057] Semiconductor device 300 may include semiconductor modules designed for various applications, such as RF communications, data processing, power management, and / or the like. For example, in RF applications, the semiconductor module may be configured to manage signal transmission and reception, noise filtering, signal amplification, and / or the like. In some embodiments, the semiconductor module may be a double-sided module, wherein components are mounted on both the top and bottom surfaces of a substrate.

[0058] As shown, semiconductor device 300 includes an interposer 303 configured to provide mechanical support and electrical connection to components mounted thereon. Interposer 303 includes a first side and a second side. The first side may be opposite the second side. A first circuit 304 may be coupled to the first side of interposer 303. The first circuit 304 may include RF components. In some instances, the first circuit 304 includes an Rx filter configured to isolate a desired signal from a series of received signals, ensuring signal quality is maintained for further processing.

[0059] In various embodiments, the first layer 301 may be coupled to the first circuit 304. For example, the first layer 301 includes a first molding material that may be configured to encapsulate the first circuit 304, protecting it from physical damage, moisture, dust, and other environmental factors. The first molding material may include, but is not limited to, EMC, SMC, phenolic molding compounds, polyimide molding compounds, and / or the like.

[0060] In some embodiments, the semiconductor device 300 further includes an SMT component 306, which may include, but is not limited to, resistors, capacitors, diodes, transistors, inductors, filters, and / or the like. In some cases, the SMT component 306 may be coupled to a first side of the interposer 303.

[0061] In some embodiments, the second circuit 305 is coupled to a second side of the interposer 303. The second circuit 305 may include RF components. For example, the second circuit 305 may include, but is not limited to, a Tx filter, a time-division duplex (TDD) filter, an amplifier, and / or the like. Examples of Tx filters may include, but are not limited to, bandpass filters, high-pass filters, low-pass filters, SAW filters, BAW filters, FBAR filters, SMRBAW filters, SiSAW filters, TCSAW filters, dielectric filters, and / or the like. The Tx filter is used to shape and limit the bandwidth of the transmitted signal to ensure compliance with regulatory standards and to minimize interference with other signals. In some instances, the second circuit 305 may be characterized by a thickness of less than or equal to 120 μm. For example, the thickness of the second circuit 305 may be in the range of 40 to 60 μm.

[0062] In various embodiments, the second layer 302 may be coupled to the second circuit 305. For example, the second layer 302 includes a second molding material configured to encapsulate the second circuit 305, protecting it from physical damage, moisture, dust, and other environmental factors. The second molding material may include, but is not limited to, EMC, SMC, phenolic molding compounds, polyimide molding compounds, and / or the like. Depending on the implementation, the first and second molding materials may be the same or different.

[0063] In various embodiments, the semiconductor device 300 further includes a substrate 307 that is coupled to a second side of the interposer 303. The substrate 307 may include, but is not limited to, a PCB, a silicon wafer, a ceramic substrate, and / or the like. In some examples, the substrate 307 is coupled to the interposer 303 via a first interconnect 310. The first interconnect 310 may include, but is not limited to, metal traces, solder bumps, conductive adhesive, wire bonding, TSVs, and / or the like.

[0064] According to some embodiments, thermal management of the semiconductor device 300 relies on thermal paths 309, where heat generated by components such as the second circuit 305 is primarily dissipated to the motherboard (e.g., substrate 307) via substrate pads 311 and / or vias 308. However, due to practical considerations of pad size, pad pitch, and via dimensions, heat dissipation through the substrate pads and vias is limited by the finite cross-sectional area available for heat flow. This limitation leads to increased thermal resistance, affecting overall heat transfer capability. Furthermore, the inclusion of lateral traces within the substrate (e.g., interposer 303), necessary for wiring thermal paths, further limits heat dissipation due to their small cross-sectional area. Therefore, maintaining the optimal operating temperature of high-power components becomes more complex, potentially impacting the performance and lifespan of the semiconductor device 300.

[0065] Figure 4This is a schematic cross-sectional view of a semiconductor device 400 according to various embodiments of the present technology. This figure is merely illustrative and should not unduly limit the scope of the claims. Many variations, alternatives, and modifications will be recognized by those skilled in the art. In various embodiments, the semiconductor device 400 includes at least one of a first layer 401, an interposer 403, a second layer 402, a first circuit 404, a second circuit 405, an SMT assembly 406, a substrate 407, a via 408, a third layer 409, a first interconnect 410, a thermal grounding plate 412, and / or the like.

[0066] Similar to Figure 3 The semiconductor device 300 has an interposer 403 comprising a first side and a second side. The first side may be opposite to the second side. A first circuit 404 may be coupled to the first side of the interposer 403. The first circuit 404 may include RF components. In some instances, the first circuit 404 includes an Rx filter. In various instances, a first layer 401 may be coupled to the first circuit 404. For example, the first layer 401 includes a first molding material that may be configured to encapsulate the first circuit 404, protecting it from physical damage, moisture, dust, and other environmental factors.

[0067] In some embodiments, the semiconductor device 400 further includes an SMT component 406, which may include, but is not limited to, resistors, capacitors, diodes, transistors, inductors, filters, and / or the like. In some cases, the SMT component 406 may be coupled to a first side of the interposer 403.

[0068] In some embodiments, the second circuit 405 is coupled to a second side of the interposer 403. The second circuit 405 may include RF components. For example, the second circuit 405 may include, but is not limited to, a Tx filter, a TDD filter, an amplifier, and / or the like. In some instances, the second circuit 405 may be characterized by a thickness of less than or equal to 120 μm. For example, the thickness of the second circuit 405 may be in the range of 40 to 60 μm. In various embodiments, a second layer 402 may be coupled to the second circuit 405. For example, the second layer 402 includes a second molding material configured to encapsulate the second circuit 405, protecting it from physical damage, moisture, dust, and other environmental factors.

[0069] In various embodiments, the semiconductor device 400 further includes a substrate 407 that is coupled to a second side of the interposer 403. The substrate 407 may include, but is not limited to, a PCB, a silicon wafer, a ceramic substrate, and / or the like. In some instances, the substrate 407 is coupled to the interposer 403 via a first interconnect 410. The first interconnect 410 may include, but is not limited to, metal traces, solder bumps, conductive adhesives, wire bonds, TSVs, and / or the like. In some cases, the substrate 407 may include a thermal grounding patch 412. The term "thermal grounding patch" may refer to a dedicated area on the substrate designed to provide a thermal path from a heat-generating component to a heat sink or thermal ground. The thermal grounding patch 412 may be made of a thermally conductive material (e.g., copper or aluminum) and serve as a thermal interface between a heat-generating component within the semiconductor device and an external thermal management system. For example, the thermal grounding patch 412 may be coupled to a heat sink or other cooling mechanism on the substrate 407.

[0070] According to various embodiments, the semiconductor device 400 further includes a third layer 409 coupled to the second circuit 405. For example, the third layer 409 may comprise a thermally conductive layer. The third layer 409 may comprise, but is not limited to, metal foil (e.g., copper, aluminum), graphite sheets, thermally conductive polymers, and / or the like. In some instances, the third layer 409 is characterized by a thermal conductivity greater than or equal to 50 W / (m*K). The inclusion of a third layer 409 with its high thermal conductivity plays a crucial role in the thermal management of the semiconductor device 400. This layer can be positioned to directly interface with heat-generating components (e.g., the second circuit 405), allowing for efficient heat transfer away from the components. The high thermal conductivity of the third layer 409 ensures rapid heat conduction through the layer, minimizing temperature rise within the heat-generating components. The process of integrating the third layer 409 may include techniques such as lamination, bonding, or coating to ensure strong adhesion and minimal thermal resistance at the interface.

[0071] Depending on the implementation, the third layer 409 may be patterned to cover the back of the second circuit 405. This patterning process involves creating a specific geometry on the thermally conductive layer to align with the shape and position of the second circuit 405. This ensures that heat generated by the second circuit 405 is effectively transferred to the third layer 409. For example, the third layer 409 may be characterized by a first pattern. The term "pattern" may refer to a specific arrangement or design of a structure on a layer designed to achieve a particular function. Examples of patterns may include, but are not limited to, conduction paths, geometries, or layouts that optimize thermal and electrical performance.

[0072] In some instances, the third layer 409 includes signal pads 413 and thermal pads 414 separated from the first pattern. The term "signal pad" can refer to an area on a substrate or layer for electrical connection to a circuit or component, which may include contacts for wire bonding, soldering, or other electrical interfaces. The term "thermal pad" can refer to an area on a substrate or layer designed to facilitate heat transfer away from heat-generating components, which may include areas coated with thermally conductive material to improve heat dissipation. Examples of thermal pads may include, but are not limited to, copper areas for heat sinks, thermally conductive adhesives, and interface areas for cooling mechanisms. The separation of signal pads 413 and thermal pads 414 within the patterned third layer 409 optimizes the design by preventing electrical interference between the thermal management structure and the signal path. This separation ensures that the thermal management system does not adversely affect the electrical performance of the semiconductor device 400, maintains signal integrity, and reduces the risk of crosstalk.

[0073] In various embodiments, substrate 407 is coupled to third layer 409 (e.g., thermal pad 414) via first interconnect 410. For example, first interconnect 410 may be patterned to be positioned above third layer 409 and soldered to a motherboard (e.g., thermal grounding pad 412), providing a direct thermal path 411 for heat dissipation. This direct thermal path allows heat generated by second circuitry 405 to be efficiently transferred through third layer 409 and first interconnect 410 to the motherboard, where heat can dissipate over a larger surface area. By providing a large cross-sectional area for heat dissipation, thermal path 411 effectively reduces the thermal gradient and prevents overheating, which is important for maintaining the performance of high-power components (e.g., second circuitry 405). Furthermore, enhanced thermal management capabilities support improved RF performance by minimizing thermal stress and noise within RF components. This ensures more stable and reliable operation, allowing semiconductor device 400 to achieve higher power output without compromising signal integrity or device reliability.

[0074] Figure 5 This is a schematic cross-sectional view of a semiconductor device 500 according to various embodiments of the present technology. This figure is merely illustrative and should not unduly limit the scope of the claims. Many variations, alternatives, and modifications will be recognized by those skilled in the art. In various embodiments, the semiconductor device 500 includes at least one of a first layer 501, an interposer 503, a second layer 502, a first circuit 504, a second circuit 505, an SMT assembly 506, a substrate 507, a via 508, a third layer 509, a first interconnect 510, a thermal grounding plate 512, and / or the like.

[0075] As shown, the third layer 509 can be coupled to the substrate 507 via a first interconnect 510 beneath the second circuitry 505. For example, the first interconnect 510 includes solder bumps. The term "solder bump" can refer to a small amount of solder used to create electrical and thermal connections between different layers or components within a semiconductor device. Examples of solder bumps may include, but are not limited to, lead-based solder bumps, lead-free solder bumps, copper pillar bumps, and / or the like. In various embodiments, the solder bump may be positioned centrally beneath the second circuitry 505 to provide an effective thermal path. The term "central" or "centrally located" can refer to placing the solder bump near the geometric center of the second circuitry 505. For example, the solder bump may be positioned within 45 to 55% of the circuit length and width from any edge to provide a uniform distribution of thermal load. The central placement of solder bumps (e.g., the first interconnect 510) reduces mechanical stress and potential cracking problems that can be caused by thermal expansion mismatch between the second circuit 505 and the thermal grounding plate 512, thereby enhancing the overall durability and robustness of the semiconductor device 500.

[0076] Figure 6 This is a schematic cross-sectional view of a semiconductor device 600 according to various embodiments of the present technology. This figure is merely illustrative and should not unduly limit the scope of the claims. Many variations, alternatives, and modifications will be recognized by those skilled in the art. In various embodiments, the semiconductor device 600 includes at least one of a first layer 601, an interposer 603, a second layer 602, a first circuit 604, a second circuit 605, an SMT assembly 606, a substrate 607, a via 608, a third layer 609, a first interconnect 610a, a second interconnect 610b, a first thermal grounding plate 612a, a second thermal grounding plate 612b, and / or the like.

[0077] like Figure 6As shown, depending on the implementation, the semiconductor device 600 may employ multiple interconnects for thermal grounding. For example, the third layer 609 is coupled to the substrate 607 via both a first interconnect 610a and a second interconnect 610b beneath the second circuitry 605. Each interconnect may include solder bumps or other electrically bonded materials. The first interconnect 610a may be coupled to a first thermal grounding patch 612a. The second interconnect 610b may be coupled to a second thermal grounding patch 612b. This configuration allows multiple thermal paths (e.g., thermal paths 611a and 611b) to efficiently transfer heat from the second circuitry 605 to the substrate 607. This configuration increases the cumulative cross-sectional area for heat dissipation, enhancing the device's ability to effectively manage thermal loads. By employing multiple interconnects, the thermal management system can evenly distribute the thermal load across several thermal paths (e.g., thermal paths 611a and 611b), reducing the risk of localized overheating and maintaining a uniform temperature distribution within the semiconductor device 600. Furthermore, the use of multiple interconnects reduces mechanical stress concentration at any single point, thus enhancing the device's structural integrity and durability.

[0078] Figure 7 This is a schematic cross-sectional view of a semiconductor device 700 according to various embodiments of the present technology. This figure is merely illustrative and should not unduly limit the scope of the claims. Many variations, alternatives, and modifications will be recognized by those skilled in the art. In various embodiments, the semiconductor device 700 includes at least one of a first layer 701, an interposer 703, a second layer 702, a first circuit 704, a second circuit 705, an SMT assembly 706, a substrate 707, a via 708, a third layer 709, a first interconnect 710a, a second interconnect 710b, a first thermal grounding plate 712a, a second thermal grounding plate 712b, and / or the like.

[0079] Similar to Figure 6 Semiconductor device 600, semiconductor device 700 employs multiple interconnects (e.g., first interconnect 710a, second interconnect 710b) for thermal grounding. In various embodiments, the first interconnect 710a and the second interconnect 710b may be positioned offset from the second circuit 705 and located on top of a molding material (e.g., second layer 702) close to the second circuit 705. By positioning the interconnects away from the second circuit 705, the design minimizes mechanical stress concentration, enhancing the structural integrity and durability of the semiconductor device 700.

[0080] Multiple thermal paths (e.g., thermal paths 711a and 711b) facilitated by the first interconnect 710a and the second interconnect 710b ensure effective heat dissipation. Heat generated by the second circuit 705 is conducted through the third layer 709 into the interconnect and ultimately transferred to the thermal grounding plates 712a and 712b on the substrate 707. These thermal paths increase the cumulative cross-sectional area for heat dissipation, enhancing the device's ability to effectively manage thermal loads.

[0081] Figure 8 This is a schematic cross-sectional view of a semiconductor device 800 according to various embodiments of the present technology. This figure is merely illustrative and should not unduly limit the scope of the claims. Many variations, alternatives, and modifications will be recognized by those skilled in the art. In various embodiments, the semiconductor device 800 includes at least one of a first layer 801, an interposer 803, a second layer 802, a first circuit 804, a second circuit 805, an SMT assembly 806, a substrate 807, a via 808, a third layer 809, a first interconnect 810, a thermal grounding plate 812, a fourth layer 813, and / or the like.

[0082] As shown, the semiconductor device 800 further includes a fourth layer 813. In some instances, the fourth layer 813 may be coupled to the first layer 801 and / or the third layer 809. The fourth layer 813 may be configured to provide electromagnetic interference (EMI) shielding for the first circuit 804 and / or the second circuit 805. For example, the term "EMI shielding" may refer to the use of materials or structures designed to block or attenuate electromagnetic fields to protect sensitive electronic components from interference. The fourth layer 813 may include, but is not limited to, metal foil, conductive fabric, metallized film, conductive coating, and / or the like.

[0083] The fourth layer 813 can be used as an EMI shield to protect sensitive electronic components (e.g., the first circuit 804 and the second circuit 805) from external electromagnetic interference and to prevent these components from emitting electromagnetic radiation that could interfere with other nearby electronic devices. In various instances, the fourth layer 813 can be positioned around the sides of the semiconductor module to create a protective barrier, ensuring the stable and reliable operation of the semiconductor device 800.

[0084] In some cases, the fourth layer 813 can be coupled to the third layer 809, allowing EMI shielding to cover and protect the bottom side of the semiconductor module. This comprehensive coverage not only shields the entire module from EMI but also enhances thermal management by providing an additional path for heat dissipation. Furthermore, the EMI shielding provided by the fourth layer 813 minimizes the risk of crosstalk and signal degradation within the semiconductor device 800. By reducing electromagnetic interference, the device achieves better performance and higher signal integrity. This is particularly beneficial in applications where the semiconductor device operates in environments with high electromagnetic noise or very close to other electronic devices.

[0085] Although specific embodiments have been fully described above, various modifications, alternative constructions, and equivalents may be used. Therefore, the above description and illustrations should not be construed as limiting the scope of the technology as defined by the appended claims.

Claims

1. A semiconductor device comprising: an interposer comprising a first side and a second side, the first side opposite the second side; a first circuit coupled to the first side, the first circuit comprising a first radio frequency (RF) component; a second circuit coupled to the second side, the second circuit comprising a second RF component; a first layer coupled to the first circuit, the first layer comprising a first molding material; and a second layer coupled to the second circuit, the second layer configured to dissipate heat generated by the second circuit.

2. The semiconductor device of claim 1, wherein the second layer is characterized by a thermal conductivity greater than or equal to 50 W / (m*K).

3. The semiconductor device of claim 1, wherein the second circuit is characterized by a thickness less than or equal to 120 um.

4. The semiconductor device of claim 1, further comprising a substrate coupled to the second layer by first interconnects.

5. The semiconductor device of claim 4, wherein the first interconnects comprise solder bumps.

6. The semiconductor device of claim 1, wherein the second layer is characterized by a first pattern, the second layer comprising a signal pad and a thermal pad separated by the first pattern.

7. The semiconductor device of claim 1, wherein the second layer is characterized by a thickness less than or equal to 50 um.

8. The semiconductor device of claim 1, wherein the second layer comprises a copper foil.

9. The semiconductor device of claim 1, further comprising a surface mount technology (SMT) component coupled to the first side.

10. A semiconductor device comprising: an interposer comprising a first side and a second side, the first side opposite the second side; a first circuit coupled to the first side; a second circuit coupled to the second side; a first layer coupled to the first circuit, the first layer comprising a first molding material; a second layer coupled to the second circuit, the second layer comprising a second molding material; and a third layer coupled to the second circuit, the third layer configured to dissipate heat generated by the second circuit.

11. The semiconductor device of claim 10, wherein the second circuit comprises a radio frequency (RF) component.

12. The semiconductor device of claim 10, wherein the second layer is characterized by a first pattern, the second layer comprising a signal pad and a thermal pad separated by the first pattern.

13. The semiconductor device of claim 10, further comprising a substrate coupled to the second layer by first interconnects.

14. The semiconductor device of claim 10, wherein the second circuit comprises a transmission filter.

15. The semiconductor device of claim 10, further comprising a fourth layer coupled to the first and third layers, the fourth layer configured to provide electromagnetic interference (EMI) shielding for the first and second circuits.

16. The semiconductor device of claim 10, further comprising a surface mount technology (SMT) component coupled to the first side. ​ 17. A semiconductor device, comprising: an interposer comprising a first side and a second side, the first side opposite the second side; a first circuit coupled to the first side, the first circuit comprising a first radio frequency (RF) component; a second circuit coupled to the second side, the second circuit comprising a second RF component; a first layer coupled to the first circuit, the first layer comprising a first molding material; a second layer coupled to the second circuit, the second layer comprising a second molding material; and a third layer coupled to the second layer, the third layer configured to dissipate heat generated by the second circuit.

18. The semiconductor device of claim 17, wherein the second circuit is characterized by a thickness less than or equal to 120 um.

19. The semiconductor device of claim 17, wherein the second layer is characterized by a thermal conductivity greater than or equal to 50 W / (m*K).

20. The semiconductor device of claim 17, wherein the third layer is characterized by a thickness less than or equal to 50 um. ​

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