High-efficiency 626nm semiconductor laser device and preparation method thereof

Abstract

The invention relates to a high-efficiency 626nm semiconductor laser device and a preparation method thereof. The semiconductor laser device sequentially comprises a GaAs substrate, a GaAs buffer layer, an AlInP lower limiting layer, a first lower waveguide layer, a second lower waveguide layer, a first quantum well, a first barrier layer, a second quantum well, a second barrier layer, a third quantum well, a first upper waveguide layer, a second upper waveguide layer, an AlInP upper limiting layer, a band gap transition layer and a GaAs cap layer from bottom to top. The components of the first upper waveguide layer and the second lower waveguide layer are gradually changed, an AlGaInP quaternary quantum well is adopted, and the In component is larger than 0.52. The step waveguide and the gradient waveguide are combined to form the composite waveguide structure, so that the light limiting factor is improved, the threshold current is reduced, and the carrier injection efficiency is improved.

Description

Technical Field

[0001] This invention belongs to the field of short-wavelength semiconductor laser technology, specifically relating to a high-efficiency 626nm semiconductor laser device and its fabrication method. Background Technology

[0002] Currently, laser-cooled Be+ ions have significant research and application value in quantum information science, plasma physics, and precision measurement physics. However, progress on 313nm deep ultraviolet lasers based on GaN materials has been slow, with poor performance and no commercially available products yet. Current methods mainly involve frequency multiplication to obtain a 626nm laser by first frequency multiplying 1051nm and 1550nm lasers generated by fiber lasers, followed by frequency doubling to obtain a 313nm laser; or frequency multiplication to obtain a 313nm laser by first frequency multiplying a 532nm laser generated by a YAG laser and a 760nm laser generated by a solid-state laser, followed by frequency doubling. While these methods can achieve high-power laser output, they suffer from complex system structures and high costs. Directly generating a 626nm semiconductor laser as a pump source offers advantages such as small size, low cost, and high conversion efficiency, significantly reducing system complexity and facilitating research in related fields; however, there are few domestic reports on this topic.

[0003] The literature Optical and Quantum Electronics, Vol 56:419 (2024) proposes using AlInP:Mg as a confinement layer to improve the band gap difference and enhance carrier suppression capability, which helps improve the high-temperature reliability of short-wavelength semiconductor lasers. However, the 626nm laser uses GaInP as the quantum well with a Ga composition of 0.73, resulting in extremely large quantum well strain, which easily leads to crystal defects and failure, and is difficult to grow. The literature Process of SPIE, High-Power Diode Laser Technology and Applications IX, Vol 7918:791811 (2011) points out that the performance of short-wavelength AlGaInP red lasers is mainly affected by the small conduction band gap difference, and carrier overflow leads to laser performance degradation. By using AlInP as a confinement layer, the optical confinement factor can be improved and the threshold current can be reduced. Using a higher P confinement layer doping concentration to improve the conduction band order helps improve the high-temperature performance of short-wavelength semiconductor lasers. However, reducing the GaInP quantum well width to achieve a 626nm lasing wavelength results in a significant impact on the interface growth quality and poor optical confinement capability.

[0004] Therefore, existing 626nm semiconductor laser devices suffer from problems such as failure due to crystal defects caused by the extreme strain of the quantum well, high growth difficulty, and poor light confinement capability due to the narrow GaInP quantum well width which significantly affects the interface growth quality. Summary of the Invention

[0005] To address the above problems, this invention provides a high-efficiency 626nm semiconductor laser device and its fabrication method.

[0006] This invention employs a compressively strained AlGaInP quantum well to increase the bandgap difference between the active region and the confinement layer, thereby improving carrier suppression capability. Furthermore, it utilizes a composite waveguide structure, combining fixed-component stepped waveguides and graded-ratio waveguides to enhance carrier injection efficiency and slope efficiency. To address the issue of AlGaInP quantum well surface absorption being easily affected by water and oxygen, a quantum well surface hybridization technique is employed to reduce surface absorption, while vacuum dissociation technology is used to improve reliability.

[0007] Terminology Explanation:

[0008] TMGa, TMAl, and TMIn refer to trimethylgallium, trimethylaluminum, and trimethylindium, respectively, and are raw materials used for epitaxial growth, along with AsH3 and PH3; Cp2Mg and DEZn are magnesium pyrocene and diethylzinc, respectively, and are doping sources for epitaxial growth, along with Si2H6 and CBr4.

[0009] Examples of expressing doping concentration: Doping concentration 2E19-1E20 atoms / cm³ 3 This refers to a doping concentration of 2×10 19 -1×10 20 atoms / cm 3 .

[0010] MOCVD is an abbreviation for Organometallic Chemical Vapor Deposition.

[0011] Compressive strain: The lattice constant of the material is greater than that of the GaAs substrate, and the lattice changes towards the substrate, resulting in compressive strain.

[0012] Tensile strain: When the lattice constant of the material is smaller than that of the GaAs substrate, the lattice changes towards the substrate and is subject to tensile strain.

[0013] The technical solution of the present invention is as follows:

[0014] In one aspect, the present invention provides a high-efficiency 626nm semiconductor laser device, comprising, from bottom to top, a GaAs substrate, a GaAs buffer layer, an AlInP lower confinement layer, a first lower waveguide layer, a second lower waveguide layer, a first quantum well, a first barrier layer, a second quantum well, a second barrier layer, a third quantum well, a first upper waveguide layer, a second upper waveguide layer, an AlInP upper confinement layer, a bandgap transition layer, and a GaAs cap layer;

[0015] The first lower waveguide layer is (Al) x1 Ga 1-x1 ) y1In 1-y1 P, where 0.65≤x1≤0.8, 0.4≤y1≤0.6;

[0016] The second lower waveguide layer is (Al) x2 Ga 1-x2 ) y2 In 1-y2 P, where 0.3≤x2≤0.8, 0.52≤y2≤0.65, In component is fixed, Al and Ga components gradually change, x2 gradually changes from high value to low value, and the initial value is the same as x1;

[0017] The first upper waveguide layer is (Al) x8 Ga 1-x8 ) y8 In 1-y8 P, where 0.3≤x8≤0.8, 0.52≤y8≤0.65, Al and Ga components gradually change, x8 gradually changes from low value to high value, and the termination value is the same as x9;

[0018] The second upper waveguide layer is (Al) x9 Ga 1-x9 ) y9 In 1-y9 P, where 0.65≤x9≤0.8, 0.4≤y9≤0.6.

[0019] According to a preferred embodiment of the present invention, the (Al) x2 Ga 1-x2 ) y2 In 1-y2 In the second lower waveguide layer of P, 0.4≤x2≤0.72, 0.55≤y2≤0.6, and x2 gradually changes from 0.72 to 0.4.

[0020] According to a preferred embodiment of the present invention, the (Al) x8 Ga 1-x8 ) y8 In 1-y8 In the first upper waveguide layer of P, 0.4≤x8≤0.72, 0.55≤y2≤0.6, and x8 gradually changes from 0.4 to 0.72.

[0021] According to the present invention, the thickness of the second lower waveguide layer is preferably 10-100 nm and is not intentionally doped; more preferably, the thickness is 40-60 nm, and most preferably, the thickness is 50 nm.

[0022] According to the present invention, the thickness of the first upper waveguide layer is preferably 10-100 nm and is not intentionally doped; more preferably, the thickness is 40-60 nm, and most preferably, the thickness is 50 nm.

[0023] According to a preferred embodiment of the present invention, the first quantum well is (Al) x3Ga 1-x3 ) y3 In 1-y3 P, where 0.1≤x3≤0.3, 0.3≤y3≤0.48.

[0024] According to a preferred embodiment of the present invention, the second quantum well is (Al) x5 Ga 1-x5 ) y5 In 1-y5 P, where 0.1≤x5≤0.3, 0.3≤y5≤0.48.

[0025] According to a preferred embodiment of the present invention, the third quantum well is (Al) x7 Ga 1-x7 ) y7 In 1-y7 P, where 0.1≤x7≤0.3, 0.3≤y7≤0.48.

[0026] According to a preferred embodiment of the present invention, the thickness of the first quantum well is 4-8 nm and is unintentionally doped; preferably, the thickness is 6 nm.

[0027] According to a preferred embodiment of the present invention, the thickness of the second quantum well is 4-8 nm and is unintentionally doped; preferably, the thickness is 6 nm.

[0028] According to a preferred embodiment of the present invention, the thickness of the third quantum well is 4-8 nm and is unintentionally doped; preferably, the thickness is 6 nm.

[0029] According to a preferred embodiment of the present invention, the first barrier layer is (Al) x4 Ga 1-x4 ) y4 In 1-y4 P, where 0.5≤x4≤0.65, 0.52≤y4≤0.65.

[0030] According to a preferred embodiment of the present invention, the second barrier layer is (Al) x6 Ga 1-x6 ) y6 In 1-y6 P, where 0.5≤x6≤0.65, 0.52≤y6≤0.65.

[0031] According to a preferred embodiment of the present invention, the bandgap transition layer is (Al) x10 Ga 1-x10 ) y10 In 1-y10 P, 0.1≤x10≤0.9, 0.4≤y7≤0.6.

[0032] Secondly, this invention provides a method for fabricating a high-efficiency 626nm semiconductor laser device, comprising performing surface heat treatment on a GaAs substrate in a growth chamber of an MOCVD equipment, and epitaxially growing, from bottom to top, a GaAs buffer layer, an AlInP lower confinement layer, a first lower waveguide layer, a second lower waveguide layer, a first quantum well, a first barrier layer, and (Al... x5 Ga 1-x5 ) y5 In 1-y5 The structure consists of a second quantum well, a second barrier layer, a third quantum well, a first upper waveguide layer, a second upper waveguide layer, an AlInP upper confinement layer, a bandgap transition layer, and a GaAs cap layer; among which,

[0033] The first lower waveguide layer is (Al) x1 Ga 1-x1 ) y1 In 1-y1 P, where 0.65≤x1≤0.8, 0.4≤y1≤0.6; the second lower waveguide layer is (Al x2 Ga 1-x2 ) y2 In 1-y2 P, where 0.3≤x2≤0.8, 0.52≤y2≤0.65, In component is fixed, Al and Ga components gradually change, x2 gradually changes from high value to low value, and the initial value is the same as x1;

[0034] The first upper waveguide layer is (Al) x8 Ga 1-x8 ) y8 In 1-y8 P, where 0.3≤x8≤0.8, 0.52≤y8≤0.65, Al and Ga components gradually change, x8 gradually changes from low to high value, and the termination value is the same as x9; the second upper waveguide layer is (Al x9 Ga 1-x9 ) y9 In 1-y9 P, where 0.65≤x9≤0.8, 0.4≤y9≤0.6;

[0035] The conditions for growing the second lower waveguide layer on the first lower waveguide layer are: growth temperature 630±10℃, introduction of TMAl, TMGa, TMIn and PH3, adjustment of the flow rate ratio of TMAl and TMGa so that x2 gradually changes from a high value to a low value, with the initial value being the same as x1.

[0036] The conditions for growing the first upper waveguide layer on the third quantum well are: growth temperature 630±10℃, introduction of TMAl, TMGa, TMIn and PH3, adjustment of the flow rate ratio of TMAl and TMGa so that x8 gradually changes from a low value to a high value, and the termination value is the same as x9.

[0037] According to a preferred embodiment of the present invention, the method includes the following steps:

[0038] S1. Place the GaAs substrate in the growth chamber of the MOCVD equipment, heat the H2 environment to 720±10℃ for baking, and introduce AsH3 to perform surface heat treatment on the GaAs substrate.

[0039] S2. Slowly reduce the temperature to 680±10℃ at a rate of less than or equal to 30℃ / min, and continue to introduce TMGa and AsH3 to grow a GaAs buffer layer on the GaAs substrate.

[0040] S3. The temperature is maintained at 680±10℃. Growth is stopped on the GaAs buffer layer. PH3 is introduced to stop the growth by stopping TMGa and AsH3. The stoppage lasts for 3 to 30 seconds, and the As atoms in the reaction chamber are exhausted.

[0041] S4. The temperature is maintained at 680±10℃. TMAl, TMIn and PH3 are introduced to grow an AlInP lower confinement layer on the GaAs buffer layer.

[0042] S5. The temperature is maintained at 680±10℃, and TMAl, TMGa, TMIn, and PH3 are introduced to grow on the AlInP confinement layer (Al x1 Ga 1-x1 ) y1 In 1-y1 P First lower waveguide layer;

[0043] S6. The temperature is abruptly changed to 630±10℃, and TMAl, TMGa, TMIn and PH3 are introduced. (Al...) x1 Ga 1-x1 ) y1 In 1-y1 P is grown on the first lower waveguide layer (Al) x2 Ga 1-x2 ) y2 In 1-y2 The second lower waveguide layer has a fixed In composition and gradually varying Al and Ga compositions. By adjusting the gas flow rate ratio of MAl and TMGa, x2 gradually changes from a high value to a low value. The initial value of x2 is the same as x1. The second lower waveguide layer is subjected to tensile strain.

[0044] S7. Maintain the temperature at 630±10℃, and introduce TMAl, TMGa, TMIn, and PH3. In (Al... x2 Ga 1-x2 ) y2 In 1-y2 P is grown on the second lower waveguide layer (Al) x3 Ga 1-x3 ) y3 In 1-y3P is the first quantum well; the first quantum well is subjected to compressive strain;

[0045] S8. The temperature is maintained at 630±10℃, and TMAl, TMGa, TMIn and PH3 are introduced. (Al) x3 Ga 1-x3 ) y3 In 1-y3 Growth on the first quantum well (Al) x4 Ga 1-x4 ) y4 In 1-y4 P is the first barrier layer; the first barrier layer is subjected to tensile strain;

[0046] S9. The temperature is maintained at 630±10℃, and TMAl, TMGa, TMIn and PH3 are introduced. (Al) x4 Ga 1-x4 ) y4 In 1-y4 P grows on the first barrier layer (Al) x5 Ga 1-x5 ) y5 In 1-y5 P is the second quantum well; the second quantum well is subjected to compressive strain;

[0047] S10, temperature maintained at 630±10℃, TMAl, TMGa, TMIn and PH3 are introduced, in (Al x5 Ga 1-x5 ) y5 In 1-y5 Growth on the second quantum well (Al) x6 Ga 1-x6 ) y6 In 1-y6 P is the second barrier layer; the second barrier layer uses tensile strain compensation to compensate for stress accumulation in the active region; the second barrier layer is subjected to tensile strain;

[0048] S11, maintain the temperature at 630±10℃, and introduce TMAl, TMGa, TMIn, and PH3, in (Al x6 Ga 1-x6 ) y6 In 1-y6 Growth on the second barrier layer (Al) x7 Ga 1-x7 ) y7 In 1-y7 P is the third quantum well; the third quantum well is subjected to compressive strain;

[0049] S12, temperature maintained at 630±10℃, TMAl, TMGa, TMIn and PH3 are introduced, in (Al x7 Ga 1-x7 ) y7 In 1-y7Growth on the third quantum well (Al) x8 Ga 1-x8 ) y8 In 1-y8 In the first upper waveguide layer P, by adjusting the gas flow ratio of MA1 and TMGa, x8 gradually changes from a low value to a high value, and the termination value of x8 is the same as that of x9.

[0050] S13, Temperature abruptly increased to 680±10℃, TMAl, TMGa, TMIn and PH3 are introduced, in (Al x8 Ga 1-x8 ) y8 In 1-y8 P is grown on the first upper waveguide layer (Al) x9 Ga 1-x9 ) y9 In 1-y9 P Second upper waveguide layer;

[0051] S14, maintain the temperature at 680±10℃, introduce TMAl, TMGa, TMIn and PH3, in (Al x9 Ga 1-x9 ) y9 In 1-y9 An AlInP upper confinement layer is grown on the second upper waveguide layer of P;

[0052] S15, temperature maintained at 680±10℃, TMAl, TMGa, TMIn and PH3 introduced, growth on AlInP confinement layer (Al x10 Ga 1-x10 ) y10 In 1-y10 P-bandgap transition layer;

[0053] S16. Reduce the temperature to 540±10℃, with a cooling rate not exceeding 40℃ / min, and continue to introduce TMGa and AsH3, in the (Al) x10 Ga 1-x10 ) y10 In 1-y10 GaAs cap layer is grown on the P-bandgap transition layer.

[0054] According to a preferred embodiment of the present invention, in step S2, the doping source of the GaAs buffer layer is Si2H6, and the doping concentration is 2E18-5E18 atoms / cm³. 3 The thickness is 0.1-0.3 μm; preferably, the doping concentration of the GaAs buffer layer is 2E18 atoms / cm³. 3 The thickness is 0.2um.

[0055] According to a preferred embodiment of the present invention, in step S4, the doping source of the AlInP lower confinement layer is Si2H6, and the doping concentration is 2E17-1E18 atoms / cm³. 3 The thickness is 1-3 μm; preferably, the doping concentration of the AlInP lower confinement layer is 5E18 atoms / cm³. 3 The thickness is 2µm.

[0056] According to a preferred embodiment of the present invention, in step S5, the (Al) x1 Ga 1-x1 ) y1 In 1-y1 The doping source for the first lower waveguide layer is Si₂H₆, with a doping concentration of 1E¹⁶-1E¹⁷ atoms / cm². 3 0.65≤x1≤0.8, 0.4≤y1≤0.6, thickness of 200-800nm; preferably, the (Al) x1 Ga 1-x1 ) y1 In 1-y1 The doping concentration of the first lower waveguide layer is 5E16 atoms / cm². 3 x1 = 0.72, y1 = 0.5, and the thickness is 600 nm.

[0057] According to a preferred embodiment of the present invention, in step S6, the (Al) x2 Ga 1-x2 ) y2 In 1-y2 The second lower waveguide layer P is unintentionally doped, with a particle size distribution of 0.3 ≤ x2 ≤ 0.8, 0.52 ≤ y2 ≤ 0.65, and x2 gradually decreasing from a high value to a low value, with the initial value of x2 being the same as x1; preferably, the (Al) x2 Ga 1-x2 ) y2 In 1-y2 In the second lower waveguide layer of P, 0.4≤x2≤0.72, y2=0.57, and x2 gradually changes from 0.72 to 0.4.

[0058] According to a preferred embodiment of the present invention, in step S7, the (Al) x3 Ga 1-x3 ) y3 In 1-y3 P is a first quantum well, unintentionally doped, with 0.1 ≤ x³ ≤ 0.3 and 0.3 ≤ y³ ≤ 0.48; preferably, the (Al) x3 Ga 1-x3 ) y3 In 1-y3 In the first quantum well P, x3 = 0.14 and y3 = 0.46.

[0059] According to a preferred embodiment of the present invention, in step S8, the (Al) x4 Ga 1-x4 ) y4 In 1-y4 The first barrier layer is unintentionally doped, with a particle size distribution of 0.5 ≤ x⁴ ≤ 0.65, 0.5² ≤ y⁴ ≤ 0.65, and a thickness of 4-12 nm; preferably, (Al) x4 Ga 1-x4 ) y4 In 1-y4 The thickness of the first barrier layer P is 5 nm, x4 = 0.55, y4 = 0.58.

[0060] According to a preferred embodiment of the present invention, in step S9, the (Al) x5 Ga 1-x5 ) y5 In 1-y5 P is a second quantum well, unintentionally doped, with 0.1 ≤ x⁵ ≤ 0.3 and 0.3 ≤ y⁵ ≤ 0.48; preferably, the (Al) x5 Ga 1-x5 ) y5 In 1-y5 In the second quantum well P, x5 = 0.14 and y5 = 0.46.

[0061] According to a preferred embodiment of the present invention, in step S10, the (Al) x6 Ga 1-x6 ) y6 In 1-y6 The second barrier layer is unintentionally doped, with a particle size distribution of 0.5 ≤ x6 ≤ 0.65, 0.52 ≤ y6 ≤ 0.65, and a thickness of 4-12 nm; preferably, the (Al) x6 Ga 1-x6 ) y6 In 1-y6 The thickness of the second barrier layer P is 5 nm, x6 = 0.55, y6 = 0.58.

[0062] According to a preferred embodiment of the present invention, in step S11, the (Al) x7 Ga 1-x7 ) y7 In 1-y7 P is a third quantum well, unintentionally doped, with 0.1 ≤ x7 ≤ 0.3 and 0.3 ≤ y7 ≤ 0.48; preferably, the (Al) x7 Ga 1-x7 ) y7 In 1-y7 In the third quantum well P, x7 = 0.13 and y7 = 0.44.

[0063] According to a preferred embodiment of the present invention, in step S12, the (Al) x8 Ga1-x8 ) y8 In 1-y8 The first upper waveguide layer P is unintentionally doped, with a particle size distribution of 0.3 ≤ x8 ≤ 0.8, 0.52 ≤ y8 ≤ 0.65, where x8 gradually increases from a low value to a high value, and the final value of x8 is the same as that of x9; preferably, the (Al) x8 Ga 1-x8 ) y8 In 1-y8 In the first upper waveguide layer of P, x8 gradually changes from 0.4 to 0.72, and y8 = 0.57.

[0064] According to a preferred embodiment of the present invention, in step S13, the (Al) x9 Ga 1-x9 ) y9 In 1-y9 The doping source for the second upper waveguide layer is Cp₂Mg or DEZn, with 0.65≤x⁹≤0.8 and 0.4≤y⁹≤0.6, and a doping concentration of 5E¹⁶-3E¹⁷ atoms / cm². 3 The thickness is 200-800 nm; preferably, the (Al) x9 Ga 1-x9 ) y9 In 1-y9 The doping concentration of the second upper waveguide layer is 1E17 atoms / cm². 3 x9 = 0.72, y9 = 0.5, and the thickness is 600nm.

[0065] According to a preferred embodiment of the present invention, in step S14, the doping source of the confinement layer on AlInP is Cp2Mg or DEZn, and the doping concentration is 8E17-2E18 atoms / cm³. 3 The thickness is 0.9-1.7 μm; preferably, the doping concentration of the confinement layer on the AlInP is 1.2E18 atoms / cm³. 3 The thickness is 1.3um.

[0066] According to a preferred embodiment of the present invention, in step S15, the (Al) x10 Ga 1-x10 ) y10 In 1-y10 The doping source for the p-bandgap transition layer is Cp₂Mg or DEZn, with a doping concentration of 1E¹⁸-3E¹⁸ atoms / cm². 3 0.1≤x10≤0.9, 0.4≤y10≤0.6, thickness of 30-100nm; preferably, the (Al) x10 Ga 1-x10 ) y10 In 1-y10The thickness of the P-bandgap transition layer is 50 nm, x10 gradually changes from 0.9 to 0.1, y10 = 0.5, and the doping concentration is 2E18 atoms / cm². 3 .

[0067] According to a preferred embodiment of the present invention, in step S16, the thickness of the cap layer is 0.1-1 μm, the doping source is CBr4 or DEZn, and the doping concentration is 2E19-1E20 atoms / cm². 3 Preferably, the thickness of the cap layer is 0.5 μm, and the doping concentration is 4E19 atoms / cm². 3 .

[0068] According to a preferred embodiment of the present invention, after epitaxial growth is completed, it can be processed by using Zn-induced ion hybridization technology and nitrogen-environment dissociation technology. Quantum well cavity surface hybridization technology is used to improve the cavity surface bandgap and reduce cavity surface absorption loss. At the same time, vacuum dissociation technology is used to dissociate in a nitrogen environment to avoid the influence of environmental water and oxygen, thereby further improving reliability.

[0069] Technical features and beneficial effects of the present invention:

[0070] This invention employs stepped waveguides and graded waveguide compositions. The first lower waveguide layer and the second upper waveguide layer have fixed compositions, while the Al and Ga compositions in the second lower waveguide layer and the first upper waveguide layer are graded, forming a composite waveguide structure. The graded waveguide layer helps improve carrier injection efficiency and slope efficiency, while the fixed waveguide layer helps increase the refractive index difference between the waveguide layer and the confinement layer, thereby increasing the optical confinement factor and reducing the threshold current. In this invention, the In composition in the second lower waveguide layer and the first upper waveguide layer is less than 0.48. Under tensile strain, combined with the tensile strain of the first and second barrier layers, it dissociates into a cavity surface bandgap contraction, reducing absorption loss.

[0071] This invention employs an AlGaInP quaternary quantum well. The In content of the AlGaInP quantum well is greater than 0.52. The compressive strain of the quantum well helps to decrease the conduction band level, thereby increasing the band gap difference between the quantum well and the confinement layer and enhancing the carrier suppression capability. This invention uses an AlGaInP quaternary quantum well. By adjusting the band gap through the Al content, and increasing the quantum well band gap through AlGaInP, the required wavelength can be achieved by matching the well width. Therefore, a wider quantum well can be used to enhance the optical confinement factor. Attached Figure Description

[0072] Figure 1 This is a schematic diagram of the epitaxial wafer structure of the 626nm semiconductor laser device of the present invention; wherein, 1 is a GaAs substrate, 2 is a GaAs buffer layer, 3 is an AlInP lower confinement layer, and 4 is an (Al x1 Ga 1-x1 ) y1 In 1-y1P is the first lower waveguide layer, 5 is (Al) x2 Ga 1-x2 ) y2 In 1-y2 P is the second lower waveguide layer, and 6 is (Al) x3 Ga 1-x3 ) y3 In 1-y3 P is the first quantum well, and 7 is (Al) x4 Ga 1-x4 ) y4 In 1-y4 P is the first barrier layer, 8 is (Al) x5 Ga 1-x5 ) y5 In 1-y5 P is the second quantum well, and 9 is (Al) x6 Ga 1-x6 ) y6 In 1-y6 P is the second barrier layer, 10 is (Al) x7 Ga 1-x7 ) y7 In 1-y7 P is the third quantum well, 11 is (Al) x8 Ga 1-x8 ) y8 In 1-y8 P is the first upper waveguide layer, 12 is (Al) x9 Ga 1-x9 ) y9 In 1-y9 P is the second upper waveguide layer, 13 is the AlInP upper confinement layer, and 14 is (Al x10 Ga 1-x10 ) y10 In 1-y10 P-bandgap transition layer, 15 is GaAs cap layer;

[0073] Figure 2 The graph shows the electrical parameter test curves of the 626nm semiconductor laser device of this invention, where the left vertical axis represents the output power (mW), the right vertical axis represents the voltage (V), and the lower horizontal axis represents the operating current (mA).

[0074] Figure 3 This is the lasing spectrum of the 626nm semiconductor laser device of the present invention; the horizontal axis is wavelength (nm) and the vertical axis is intensity (au). Detailed Implementation

[0075] The present invention will be further described below with reference to embodiments and accompanying drawings, but is not limited thereto. The described embodiments are some embodiments of the present invention. Based on these embodiments, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0076] In the description of this invention, it should be noted that the terms "upper," "lower," "left," "right," "inner," and "outer," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, and are only for the convenience of describing the invention and simplifying the description, and should not be construed as limiting the invention. Furthermore, the terms "first," "second," etc., are used for descriptive purposes only and should not be construed as indicating or implying relative importance. In this embodiment, "semiconductor laser device" has the same meaning as "semiconductor laser device" or "device."

[0077] Furthermore, the technical features involved in the different embodiments of the present invention described below can be combined with each other as long as they do not conflict with each other. Unless otherwise specified in the embodiments of the present invention, all can be based on existing technology. The component gradients in the embodiments are linear gradients.

[0078] In one embodiment of the present invention, a 626nm semiconductor laser device comprises, from bottom to top, a GaAs substrate 1, a GaAs buffer layer 2, an AlInP lower confinement layer 3, and (Al... x1 Ga 1-x1 ) y1 In 1-y1 P First lower waveguide layer 4, (Al) x2 Ga 1-x2 ) y2 In 1-y2 P Second Lower Waveguide Layer 5, (Al) x3 Ga 1-x3 ) y3 In 1-y3 P first quantum well 6, (Al) x4 Ga 1-x4 ) y4 In 1-y4 P First Base Layer 7, (Al) x5 Ga 1-x5 ) y5 In 1-y5 P second quantum well 8, (Al) x6 Ga 1-x6 ) y6 In 1-y6 P Second Base Layer 9, (Al) x7 Ga 1-x7 ) y7 In 1-y7 P Third Quantum Well 10, (Al) x8 Ga 1-x8 ) y8 In 1-y8 P First upper waveguide layer 11, (Al) x9 Ga 1-x9 ) y9 In1-y9 P second upper waveguide layer 12, AlInP upper confinement layer 13, (Al x10 Ga 1-x10 ) y10 In 1-y10 P-bandgap transition layer 14, GaAs cap layer 15; wherein, 0.65≤x1≤0.8, 0.4≤y1≤0.6; 0.3≤x2≤0.8, 0.52≤y2≤0.65; 0.1≤x3≤0.3, 0.3≤y3≤0.48; 0.5≤x4≤0.65, 0.52≤y4≤0.65; 0.1≤x5≤0.3, 0 0.3≤y5≤0.48;0.5≤x6≤0.65,0.52≤y6≤0.65;0.1≤x7≤0.3,0.3≤y7≤0.48;0.3≤x8≤0.8,0.52≤y8≤0.65;0.65≤x9≤0.8,0.4≤y9≤0.6;0.1≤x10≤0.9,0.4≤y7≤0.6。

[0079] The (Al) x1 Ga 1-x1 ) y1 In 1-y1 P's first lower waveguide layer has four components fixed; the (Al) x2 Ga 1-x2 ) y2 In 1-y2 In the lower waveguide layer of P, the In composition is fixed, while the Al and Ga compositions are gradually varied. x2 gradually decreases from a high value to a low value, with an initial value the same as x1. The (Al) x8 Ga 1-x8 ) y8 In 1-y8 P is the first upper waveguide layer 11, with Al and Ga components gradually changing, x8 gradually changing from a low value to a high value, and the termination value is the same as x9; the (Al) x9 Ga 1-x9 ) y9 In 1-y9 The second upper waveguide layer (P) has a fixed composition (12). As a comparative example, while using a graded waveguide layer alone can improve carrier injection efficiency, the small refractive index difference between it and the confinement layer results in poor optical confinement. Alternatively, using a stepped waveguide with a fixed composition alone provides good optical confinement, but the carrier injection efficiency is slightly lower. This invention innovatively employs a composite waveguide structure composed of stepped and graded waveguide components. Combining the advantages of both increases the refractive index difference between the waveguide layer and the confinement layer, improves the optical confinement factor, reduces the threshold current, and enhances carrier injection efficiency.

[0080] The present invention will be described in more detail below through preparation examples.

[0081] Example 1

[0082] A method for fabricating a high-efficiency 626nm semiconductor laser device includes the following steps:

[0083] S1. Place the GaAs substrate 1 in the growth chamber of the MOCVD equipment, heat the H2 environment to 720±10℃ for baking, and introduce AsH3 to perform surface heat treatment on the GaAs substrate 1.

[0084] S2. Slowly lower the temperature to 680±10℃ at a rate of ≤30℃ / min, and continue to introduce TMGa and AsH3 to grow a GaAs buffer layer 2 on GaAs substrate 1. The doping source is Si2H6, and the doping concentration is 2E18-5E18 atoms / cm³. 3 The thickness is 0.1-0.3um.

[0085] S3. The temperature is maintained at 680±10℃. Growth is stopped on GaAs buffer layer 2. PH3 is introduced to stop the growth by stopping TMGa and AsH3. The stoppage lasts for 3 to 30 seconds, exhausting the As atoms in the reaction chamber.

[0086] S4. Maintain the temperature at 680±10℃, introduce TMAl, TMIn, and PH3, and grow an AlInP lower confinement layer 3 on the GaAs buffer layer 2. The doping source is Si2H6, and the doping concentration is 2E17-1E18 atoms / cm³. 3 The thickness is 1-3 μm.

[0087] S5. The temperature is maintained at 680±10℃, and TMAl, TMGa, TMIn and PH3 are introduced to grow on the AlInP lower confinement layer 3 (Al x1 Ga 1-x1 ) y1 In 1-y1 The first lower waveguide layer (P4) is doped with Si2H6 as the doping source, and the doping concentration is 1E16-1E17 atoms / cm². 3 , 0.65≤x1≤0.8, 0.4≤y1≤0.6, thickness is 200-800nm.

[0088] S6. The temperature is abruptly changed to 630±10℃, and TMAl, TMGa, TMIn and PH3 are introduced. (Al...) x1 Ga 1-x1 ) y1 In 1-y1 (Al) is grown on the first lower waveguide layer 4. x2 Ga 1-x2 ) y2 In 1-y2P is the second lower waveguide layer 5, which is unintentionally doped, with 0.3≤x2≤0.8 and 0.52≤y2≤0.65. The x2 composition gradually changes from high to low values, and the starting value of the x2 composition change is the same as that of x1. The thickness is 10-100nm.

[0089] S7. Maintain the temperature at 630±10℃, and introduce TMAl, TMGa, TMIn, and PH3. In (Al... x2 Ga 1-x2 ) y2 In 1-y2 (Al) is grown on the second lower waveguide layer 5. x3 Ga 1-x3 ) y3 In 1-y3 P is the first quantum well 6, unintentionally doped, with 0.1≤x3≤0.3, 0.3≤y3≤0.48, and a thickness of 4-8nm.

[0090] S8. The temperature is maintained at 630±10℃, and TMAl, TMGa, TMIn and PH3 are introduced. (Al) x3 Ga 1-x3 ) y3 In 1-y3 Growth on the first quantum well 6 (Al) x4 Ga 1-x4 ) y4 In 1-y4 The first barrier layer 7 is unintentionally doped, with a thickness of 4-12 nm, where x4 ≤ 0.65 and y4 ≤ 0.52.

[0091] S9. The temperature is maintained at 630±10℃, and TMAl, TMGa, TMIn and PH3 are introduced. (Al) x4 Ga 1-x4 ) y4 In 1-y4 P grows on the first barrier layer 7 (Al) x5 Ga 1-x5 ) y5 In 1-y5 P-second quantum well 8, unintentionally doped, 0.1≤x5≤0.3, 0.3≤y5≤0.48, with a thickness of 4-8nm.

[0092] S10, temperature maintained at 630±10℃, TMAl, TMGa, TMIn and PH3 are introduced, in (Al x5 Ga 1-x5 ) y5 In 1-y5 Growth on the second quantum well 8 (Al) x6 Ga 1-x6 ) y6 In 1-y6The second barrier layer 9 is unintentionally doped with 0.5≤x6≤0.65 and 0.52≤y6≤0.65, and has a thickness of 4-12nm.

[0093] S11, maintain the temperature at 630±10℃, and introduce TMAl, TMGa, TMIn, and PH3, in (Al x6 Ga 1-x6 ) y6 In 1-y6 Growth on P second barrier layer 9 (Al) x7 Ga 1-x7 ) y7 In 1-y7 P-type third quantum well 10, unintentionally doped, 0.1≤x7≤0.3, 0.3≤y7≤0.48, with a thickness of 4-8nm.

[0094] S12, temperature maintained at 630±10℃, TMAl, TMGa, TMIn and PH3 are introduced, in (Al x7 Ga 1-x7 ) y7 In 1-y7 Growth on the third quantum well 10 (Al) x8 Ga 1-x8 ) y8 In 1-y8 P is the first upper waveguide layer 11, unintentionally doped, with 0.3≤x8≤0.8, 0.52≤y8≤0.65, x8 gradually changes from low to high values, and the termination value of the x8 composition gradient is the same as that of x9, with a thickness of 10-100nm.

[0095] S13, Temperature abruptly increased to 680±10℃, TMAl, TMGa, TMIn and PH3 are introduced, in (Al x8 Ga 1-x8 ) y8 In 1-y8 (Al) is grown on the first upper waveguide layer 11. x9 Ga 1-x9 ) y9 In 1-y9 The second upper waveguide layer (P12) is doped with Cp₂Mg or DEZn as the doping source, with a doping concentration of 0.65 ≤ x⁹ ≤ 0.8 and 0.4 ≤ y⁹ ≤ 0.6, and a doping concentration of 5E¹⁶-3E¹⁷ atoms / cm². 3 The thickness is 200-800nm.

[0096] S14, maintain the temperature at 680±10℃, introduce TMAl, TMGa, TMIn and PH3, in (Al x9 Ga 1-x9 ) y9 In 1-y9An AlInP upper confinement layer 13 is grown on the second upper waveguide layer 12, with the doping source being Cp2Mg or DEZn, and the doping concentration being 8E17-2E18 atoms / cm². 3 The thickness is 0.9-1.7um.

[0097] S15, temperature maintained at 680±10℃, TMAl, TMGa, TMIn and PH3 introduced, growth on AlInP confinement layer 13 (Al x10 Ga 1-x10 ) y10 In 1-y10 P-bandgap transition layer 14, with Cp₂Mg or DEZn as the doping source and a doping concentration of 1E¹⁸-3E¹⁸ atoms / cm². 3 , 0.1≤x10≤0.9, 0.4≤y10≤0.6, thickness is 30-100nm.

[0098] S16. Reduce the temperature to 540±10℃, with a cooling rate not exceeding 40℃ / min, and continue to introduce TMGa and AsH3, in the (Al) x10 Ga 1-x10 ) y10 In 1-y10 A GaAs cap layer 15 is grown on the P-bandgap transition layer 14, with CBr4 or DEZn as the doping source and a doping concentration of 2E19-1E20 atoms / cm². 3 The thickness is 0.1-1um.

[0099] S17. After the epitaxial wafer is grown, it is treated by Zn-induced ion hybridization technology and nitrogen-environment dissociation technology. The vacuum degree of the nitrogen-environment dissociation technology is less than 10^-6 Pa.

[0100] Example 2

[0101] A high-efficiency 626nm semiconductor laser device comprises, from bottom to top, a GaAs substrate 1, a GaAs buffer layer 2, an AlInP lower confinement layer 3, a first lower waveguide layer 4, a second lower waveguide layer 5, a first quantum well 6, a first barrier layer 7, a second quantum well 8, a second barrier layer 9, a third quantum well 10, a first upper waveguide layer 11, a second upper waveguide layer 12, an AlInP upper confinement layer 13, a bandgap transition layer 14, and a GaAs cap layer 15.

[0102] Among them, (Al) x1 Ga 1-x1 ) y1 In 1-y1 In the first lower waveguide layer 4 of P, x1 = 0.72, y1 = 0.5; (Al) x2 Ga 1-x2 ) y2 In1-y2 In the second lower waveguide layer 5 of P, 0.4 ≤ x2 ≤ 0.72, y2 = 0.57, and x2 gradually changes from 0.72 to 0.4; (Al) x3 Ga 1-x3 ) y3 In 1-y3 In the first quantum well 6 of P, x3 = 0.14, y3 = 0.46; (Al) x5 Ga 1-x5 ) y5 In 1-y5 In the second quantum well 8, x5 = 0.14, y5 = 0.46; (Al) x7 Ga 1-x7 ) y7 In 1-y7 In the third quantum well 10, x7 = 0.13, y7 = 0.44; (Al) x8 Ga 1-x8 ) y8 In 1-y8 In the first upper waveguide layer 11 of P, 0.4 ≤ x8 ≤ 0.72, y8 = 0.57, and x8 gradually changes from 0.4 to 0.72; (Al) x9 Ga 1-x9 ) y9 In 1-y9 In the second upper waveguide layer 12 of P, x9 = 0.72, y9 = 0.5.

[0103] The preparation method steps are as follows:

[0104] S1. Place the GaAs substrate 1 in the growth chamber of the MOCVD equipment, heat the H2 environment to 720℃ for baking, and introduce AsH3 to perform surface heat treatment on the GaAs substrate 1.

[0105] S2. Slowly lower the temperature to 680±10℃ at a cooling rate of 30℃ / min, and continue to introduce TMGa and AsH3 to grow a GaAs buffer layer 2 on GaAs substrate 1. The doping source is Si2H6, and the doping concentration is 2E18 atoms / cm³. 3 The thickness is 0.2um.

[0106] S3. The temperature is maintained at 680℃. Growth is stopped on GaAs buffer layer 2. PH3 is introduced to stop the growth by stopping the group V source (100% AsH3) and group III source (TMGa). The stoppage lasts for 30 seconds, exhausting the As atoms in the reaction chamber.

[0107] S4. Maintaining the temperature at 680℃, introduce TMAl, TMIn, and PH3 to grow an AlInP lower confinement layer 3 on the GaAs buffer layer 2. The doping source is Si2H6, and the doping concentration is 5E18 atoms / cm³. 3The thickness is 2µm.

[0108] S5. The temperature is maintained at 680℃, and TMAl, TMGa, TMIn, and PH3 are introduced to grow (Al) on the AlInP lower confinement layer 3. x1 Ga 1-x1 ) y1 In 1-y1 The first lower waveguide layer (P4) is doped with Si2H6 as the doping source, x1 = 0.72, y1 = 0.5, and the doping concentration is 5E16 atoms / cm². 3 The thickness is 600nm.

[0109] S6. Temperature abruptly increased to 630℃, TMAl, TMGa, TMIn, and PH3 are introduced, in (Al... x1 Ga 1-x1 ) y1 In 1-y1 (Al) is grown on the first lower waveguide layer 4. x2 Ga 1-x2 ) y2 In 1-y2 The second lower waveguide layer 5 is unintentionally doped, with x2 gradually changing from 0.72 to 0.4 and y2 = 0.57. The initial value of the x2 composition change is the same as that of x1, and the thickness is 50 nm.

[0110] S7. Maintain the temperature at 630℃, and introduce TMAl, TMGa, TMIn, and PH3. In (Al... x2 Ga 1-x2 ) y2 In 1-y2 (Al) is grown on the second lower waveguide layer 5. x3 Ga 1-x3 ) y3 In 1-y3 P is the first quantum well 6, unintentionally doped, with x3 = 0.14, y3 = 0.46, and a thickness of 6 nm.

[0111] S8, the temperature is maintained at 630℃, and TMAl, TMGa, TMIn and PH3 are introduced, in (Al x3 Ga 1-x3 ) y3 In 1-y3 Growth on the first quantum well 6 (Al) x4 Ga 1-x4 ) y4 In 1-y4 The first barrier layer 7 is unintentionally doped, with x4 = 0.55, y4 = 0.58, and a thickness of 5 nm.

[0112] S9, the temperature is maintained at 630℃, and TMAl, TMGa, TMIn and PH3 are introduced, in (Al x4Ga 1-x4 ) y4 In 1-y4 P grows on the first barrier layer 7 (Al) x5 Ga 1-x5 ) y5 In 1-y5 P is a second quantum well 8, unintentionally doped, with x5 = 0.14, y5 = 0.46, and a thickness of 6 nm.

[0113] S10, temperature maintained at 630℃, TMAl, TMGa, TMIn and PH3 are introduced, in (Al x5 Ga 1-x5 ) y5 In 1-y5 Growth on the second quantum well 8 (Al) x6 Ga 1-x6 ) y6 In 1-y6 The second barrier layer 9 is unintentionally doped, with x6 = 0.55, y6 = 0.58, and a thickness of 5 nm.

[0114] S11, the temperature is maintained at 630℃, and TMAl, TMGa, TMIn and PH3 are introduced, in (Al x6 Ga 1-x6 ) y6 In 1-y6 Growth on P second barrier layer 9 (Al) x7 Ga 1-x7 ) y7 In 1-y7 P is a third quantum well 10, unintentionally doped, with x7 = 0.13, y7 = 0.44, and a thickness of 6 nm.

[0115] S12, temperature maintained at 630℃, TMAl, TMGa, TMIn and PH3 are introduced, in (Al x7 Ga 1-x7 ) y7 In 1-y7 Growth on the third quantum well 10 (Al) x8 Ga 1-x8 ) y8 In 1-y8 The first upper waveguide layer 11 is unintentionally doped, with x8 gradually changing from 0.4 to 0.72, y8 = 0.57, and a thickness of 50 nm.

[0116] S13, Temperature abruptly increased to 680℃, TMAl, TMGa, TMIn and PH3 are introduced, in (Al x8 Ga 1-x8 ) y8 In 1-y8 (Al) is grown on the first upper waveguide layer 11. x9 Ga1-x9 ) y9 In 1-y9 The second upper waveguide layer, P12, is doped with Cp2Mg as the doping source, x9 = 0.72, y9 = 0.5, and the doping concentration is 1E17 atoms / cm². 3 The thickness is 600nm.

[0117] S14, maintain the temperature at 680℃, and introduce TMAl, TMGa, TMIn, and PH3, in (Al x9 Ga 1-x9 ) y9 In 1-y9 An AlInP upper confinement layer 13 is grown on the second upper waveguide layer 12, with Cp₂Mg as the doping source and a doping concentration of 1.2E¹⁸ atoms / cm². 3 The thickness is 1.3um.

[0118] S15, the temperature is maintained at 680℃, and TMAl, TMGa, TMIn and PH3 are introduced to grow on the AlInP confinement layer 13 (Al x10 Ga 1-x10 ) y10 In 1-y10 P-bandgap transition layer 14, with Cp₂Mg as the doping source and a doping concentration of 1E¹⁸-3E¹⁸ atoms / cm². 3 x10 gradually changes from 0.9 to 0.1, y10 = 0.5, and the doping concentration is 2E18 atoms / cm³. 3 The thickness is 50nm.

[0119] S16. Reduce the temperature to 540℃, with a cooling rate not exceeding 40℃ / min, and continue to introduce TMGa and AsH3, in the (Al) x10 Ga 1-x10 ) y10 In 1-y10 A GaAs cap layer 15 is grown on the P-bandgap transition layer 14, with CBr4 as the doping source and a doping concentration of 4E19 atoms / cm². 3 The thickness is 0.5um.

[0120] Preferably, after the above growth is completed, the cells are treated using Zn-induced ion hybridization technology and nitrogen-environment dissociation technology, with the vacuum level of the nitrogen-environment dissociation technology being less than 10^-6 Pa. Quantum well cavity surface hybridization technology is used to increase the cavity surface bandgap and reduce cavity surface absorption loss. Vacuum dissociation technology is employed in a nitrogen environment to avoid the influence of ambient water and oxygen.

[0121] Example 3, as described in Example 2, except that:

[0122] S5. The temperature is maintained at 680±10℃, and TMAl, TMGa, TMIn and PH3 are introduced to grow on the AlInP lower confinement layer 3 (Al x1 Ga 1-x1 ) y1 In 1-y1 The first lower waveguide layer (P4) is doped with Si2H6 as the doping source, x1 = 0.8, y1 = 0.5, and the doping concentration is 8E16 atoms / cm³. 3 The thickness is 500nm.

[0123] S6. The temperature is abruptly changed to 630±10℃, and TMAl, TMGa, TMIn and PH3 are introduced. (Al...) x1 Ga 1-x1 ) y1 In 1-y1 (Al) is grown on the first lower waveguide layer 4. x2 Ga 1-x2 ) y2 In 1-y2 The second lower waveguide layer 5 is unintentionally doped, with x2 gradually changing from 0.8 to 0.3 and y2 = 0.6. The initial value of the x2 composition gradient is the same as that of x1, and the thickness is 20 nm.

[0124] S7. Maintain the temperature at 630±10℃, and introduce TMAl, TMGa, TMIn, and PH3. In (Al... x2 Ga 1-x2 ) y2 In 1-y2 (Al) is grown on the second lower waveguide layer 5. x3 Ga 1-x3 ) y3 In 1-y3 P is the first quantum well 6, unintentionally doped, with x3 = 0.2, y3 = 0.4, and a thickness of 5 nm.

[0125] S8. The temperature is maintained at 630±10℃, and TMAl, TMGa, TMIn and PH3 are introduced. (Al) x3 Ga 1-x3 ) y3 In 1-y3 Growth on the first quantum well 6 (Al) x4 Ga 1-x4 ) y4 In 1-y4 The first barrier layer 7 is unintentionally doped, with x4 = 0.6, y4 = 0.6, and a thickness of 10 nm.

[0126] S9. The temperature is maintained at 630±10℃, and TMAl, TMGa, TMIn and PH3 are introduced. (Al) x4 Ga 1-x4 )y4 In 1-y4 P grows on the first barrier layer 7 (Al) x5 Ga 1-x5 ) y5 In 1-y5 P is a second quantum well 8, unintentionally doped, with x5 = 0.2, y5 = 0.3, and a thickness of 5 nm.

[0127] S10, temperature maintained at 630±10℃, TMAl, TMGa, TMIn and PH3 are introduced, in (Al x5 Ga 1-x5 ) y5 In 1-y5 Growth on the second quantum well 8 (Al) x6 Ga 1-x6 ) y6 In 1-y6 The second barrier layer 9 is unintentionally doped, with x6 = 0.6, y6 = 0.55, and a thickness of 8 nm.

[0128] S11, maintain the temperature at 630±10℃, and introduce TMAl, TMGa, TMIn, and PH3, in (Al x6 Ga 1-x6 ) y6 In 1-y6 Growth on P second barrier layer 9 (Al) x7 Ga 1-x7 ) y7 In 1-y7 P is a third quantum well 10, unintentionally doped, with x7 = 0.2, y7 = 0.4, and a thickness of 6 nm.

[0129] S12, temperature maintained at 630±10℃, TMAl, TMGa, TMIn and PH3 are introduced, in (Al x7 Ga 1-x7 ) y7 In 1-y7 Growth on the third quantum well 10 (Al) x8 Ga 1-x8 ) y8 In 1-y8 The first upper waveguide layer 11 is unintentionally doped, with x8 gradually changing from 0.3 to 0.8, y8 = 0.6, and a thickness of 20nm.

[0130] S13, Temperature abruptly increased to 680±10℃, TMAl, TMGa, TMIn and PH3 are introduced, in (Al x8 Ga 1-x8 ) y8 In 1-y8 (Al) is grown on the first upper waveguide layer 11. x9 Ga 1-x9 )y9 In 1-y9 The second upper waveguide layer, P12, is doped with DEZn as the doping source, x9 = 0.8, y9 = 0.5, and the doping concentration is 8E16 atoms / cm². 3 The thickness is 500nm.

[0131] Example 4, as described in Example 2, except that:

[0132] S5. The temperature is maintained at 680±10℃, and TMAl, TMGa, TMIn and PH3 are introduced to grow on the AlInP lower confinement layer 3 (Al x1 Ga 1-x1 ) y1 In 1-y1 The first lower waveguide layer (P4) is doped with Si2H6 as the doping source, x1 = 0.65, y1 = 0.6, and the doping concentration is 1E17 atoms / cm². 3 The thickness is 650nm.

[0133] S6. The temperature is abruptly changed to 630±10℃, and TMAl, TMGa, TMIn and PH3 are introduced. (Al...) x1 Ga 1-x1 ) y1 In 1-y1 (Al) is grown on the first lower waveguide layer 4. x2 Ga 1-x2 ) y2 In 1-y2 The second lower waveguide layer 5 is unintentionally doped, with x2 gradually changing from 0.65 to 0.3 and y2 = 0.68. The initial value of the x2 composition gradient is the same as that of x1, and the thickness is 70 nm.

[0134] S7. Maintain the temperature at 630±10℃, and introduce TMAl, TMGa, TMIn, and PH3. In (Al... x2 Ga 1-x2 ) y2 In 1-y2 (Al) is grown on the second lower waveguide layer 5. x3 Ga 1-x3 ) y3 In 1-y3 P is the first quantum well 6, unintentionally doped, with x3 = 0.3, y3 = 0.45, and a thickness of 7 nm.

[0135] S8. The temperature is maintained at 630±10℃, and TMAl, TMGa, TMIn and PH3 are introduced. (Al) x3 Ga 1-x3 ) y3 In 1-y3 Growth on the first quantum well 6 (Al) x4 Ga1-x4 ) y4 In 1-y4 The first barrier layer 7 is unintentionally doped, with x4 = 0.6, y4 = 0.58, and a thickness of 5 nm.

[0136] S9. The temperature is maintained at 630±10℃, and TMAl, TMGa, TMIn and PH3 are introduced. (Al) x4 Ga 1-x4 ) y4 In 1-y4 P grows on the first barrier layer 7 (Al) x5 Ga 1-x5 ) y5 In 1-y5 P is a second quantum well 8, unintentionally doped, with x5 = 0.3, y5 = 0.4, and a thickness of 6 nm.

[0137] S10, temperature maintained at 630±10℃, TMAl, TMGa, TMIn and PH3 are introduced, in (Al x5 Ga 1-x5 ) y5 In 1-y5 Growth on the second quantum well 8 (Al) x6 Ga 1-x6 ) y6 In 1-y6 The second barrier layer 9 is unintentionally doped, with x6 = 0.6, y6 = 0.52, and a thickness of 12 nm.

[0138] S11, maintain the temperature at 630±10℃, and introduce TMAl, TMGa, TMIn, and PH3, in (Al x6 Ga 1-x6 ) y6 In 1-y6 Growth on P second barrier layer 9 (Al) x7 Ga 1-x7 ) y7 In 1-y7 P is a third quantum well 10, unintentionally doped, with x7 = 0.2, y7 = 0.48, and a thickness of 6 nm.

[0139] S12, temperature maintained at 630±10℃, TMAl, TMGa, TMIn and PH3 are introduced, in (Al x7 Ga 1-x7 ) y7 In 1-y7 Growth on the third quantum well 10 (Al) x8 Ga 1-x8 ) y8 In 1-y8The first upper waveguide layer 11 is unintentionally doped, with x8 gradually changing from 0.3 to 0.65, y8 = 0.65, and a thickness of 65nm.

[0140] S13, Temperature abruptly increased to 680±10℃, TMAl, TMGa, TMIn and PH3 are introduced, in (Al x8 Ga 1-x8 ) y8 In 1-y8 (Al) is grown on the first upper waveguide layer 11. x9 Ga 1-x9 ) y9 In 1-y9 The second upper waveguide layer, P12, is doped with DEZn as the doping source, x9 = 0.65, y9 = 0.45, and the doping concentration is 8E16 atoms / cm². 3 The thickness is 550nm.

[0141] Example 5, as described in Example 2, except that:

[0142] S5. The temperature is maintained at 680±10℃, and TMAl, TMGa, TMIn and PH3 are introduced to grow on the AlInP lower confinement layer 3 (Al x1 Ga 1-x1 ) y1 In 1-y1 The first lower waveguide layer 4 of P is doped with Si2H6 as the doping source, x1 = 0.72, y1 = 0.4, and the doping concentration is 1E17 atoms / cm. 3 The thickness is 200nm.

[0143] S6. The temperature is abruptly changed to 630±10℃, and TMAl, TMGa, TMIn and PH3 are introduced. (Al...) x1 Ga 1-x1 ) y1 In 1-y1 (Al) is grown on the first lower waveguide layer 4. x2 Ga 1-x2 ) y2 In 1-y2 The second lower waveguide layer 5 is unintentionally doped, with x2 gradually changing from 0.72 to 0.3 and y2 = 0.54. The initial value of the x2 composition gradient is the same as that of x1, and the thickness is 68 nm.

[0144] S12, temperature maintained at 630±10℃, TMAl, TMGa, TMIn and PH3 are introduced, in (Al x7 Ga 1-x7 ) y7 In 1-y7 Growth on the third quantum well 10 (Al) x8 Ga 1-x8 )y8 In 1-y8 The first upper waveguide layer 11 is unintentionally doped, with x8 gradually changing from 0.3 to 0.72, y8 = 0.58, and a thickness of 90 nm.

[0145] S13, Temperature abruptly increased to 680±10℃, TMAl, TMGa, TMIn and PH3 are introduced, in (Al x8 Ga 1-x8 ) y8 In 1-y8 (Al) is grown on the first upper waveguide layer 11. x9 Ga 1-x9 ) y9 In 1-y9 The second upper waveguide layer, P12, is doped with DEZn as the doping source, x9 = 0.72, y9 = 0.7, and the doping concentration is 8E16 atoms / cm². 3 The thickness is 750nm.

[0146] Test case

[0147] The electrical parameters of the 626nm semiconductor laser device prepared in Example 2 were tested, and the test results are as follows: Figure 2 As shown. By Figure 2 It can be seen that the present invention achieves high-efficiency lasing with a cavity length of 1500um, a threshold current of 86mA, and a slope efficiency of 0.97W / A.

[0148] A lasing test (150mA) was conducted on the 626nm semiconductor laser device prepared in Example 2, and the results are as follows: Figure 3 As shown. By Figure 3 It is known that the semiconductor laser device of the present invention successfully achieved 626.8nm wavelength lasing under the operating conditions of 150mA@15℃. Further reducing the operating temperature can achieve a decrease in lasing wavelength, which will help to further expand the application of 626nm band lasers in the Be+ field.

Claims

1. A high-efficiency 626nm semiconductor laser device, characterized in that, From bottom to top, it includes a GaAs substrate, a GaAs buffer layer, an AlInP lower confinement layer, a first lower waveguide layer, a second lower waveguide layer, a first quantum well, a first barrier layer, a second quantum well, a second barrier layer, a third quantum well, a first upper waveguide layer, a second upper waveguide layer, an AlInP upper confinement layer, a bandgap transition layer, and a GaAs cap layer. The first lower waveguide layer is (Al) x1 Ga 1-x1 ) y1 In 1-y1 P, where 0.65≤x1≤0.8, 0.4≤y1≤0.6; The second lower waveguide layer is (Al) x2 Ga 1-x2 ) y2 In 1-y2 P, where 0.3≤x2≤0.8, 0.52≤y2≤0.65, In component is fixed, Al and Ga components gradually change, x2 gradually changes from high value to low value, and the initial value is the same as x1; The first upper waveguide layer is (Al) x8 Ga 1-x8 ) y8 In 1-y8 P, where 0.3≤x8≤0.8, 0.52≤y8≤0.65, Al and Ga components gradually change, x8 gradually changes from low value to high value, and the termination value is the same as x9; The second upper waveguide layer is (Al) x9 Ga 1-x9 ) y9 In 1-y9 P, where 0.65≤x9≤0.8, 0.4≤y9≤0.

6.

2. The high-efficiency 626nm semiconductor laser device according to claim 1, characterized in that, The (Al) x2 Ga 1-x2 ) y2 In 1-y2 In the second lower waveguide layer P, 0.4 ≤ x2 ≤ 0.72, 0.55 ≤ y2 ≤ 0.6, and x2 gradually changes from 0.72 to 0.4; preferably, the (Al) x8 Ga 1-x8 ) y8 In 1-y8 In the first upper waveguide layer of P, 0.4≤x8≤0.72, 0.55≤y2≤0.6, and x8 gradually changes from 0.4 to 0.

72.

3. The high-efficiency 626nm semiconductor laser device according to claim 1, characterized in that, Includes one or more of the following conditions: a. The thickness of the second lower waveguide layer is 10-100nm, and it is not intentionally doped; preferably, the thickness is 40-60nm, and most preferably, the thickness is 50nm; b. The thickness of the first upper waveguide layer is 10-100nm, and it is not intentionally doped; preferably, the thickness is 40-60nm, and most preferably, the thickness is 50nm.

4. The high-efficiency 626nm semiconductor laser device according to claim 1, characterized in that, Includes one or more of the following conditions: a. The first quantum well is (Al) x3 Ga 1-x3 ) y3 In 1-y3 P, where 0.1≤x³≤0.3, 0.3≤y³≤0.48; b. The second quantum well is (Al x5 Ga 1-x5 ) y5 In 1-y5 P, where 0.1≤x5≤0.3, 0.3≤y5≤0.48; c. The third quantum well is (Al x7 Ga 1-x7 ) y7 In 1-y7 P, where 0.1≤x7≤0.3, 0.3≤y7≤0.

48.

5. The high-efficiency 626nm semiconductor laser device according to claim 1, characterized in that, Includes one or more of the following conditions: a. The thickness of the first quantum well is 4-8 nm, and it is not intentionally doped; preferably, the thickness is 6 nm. b. The thickness of the second quantum well is 4-8 nm, and it is not intentionally doped; preferably, the thickness is 6 nm. c. The thickness of the third quantum well is 4-8 nm, and it is not intentionally doped; preferably, the thickness is 6 nm.

6. The high-efficiency 626nm semiconductor laser device according to claim 1, characterized in that, The method includes one or more of the following conditions: a. The first barrier layer is (Al) x4 Ga 1-x4 ) y4 In 1-y4 P, where 0.5 ≤ x⁴ ≤ 0.65, 0.5² ≤ y⁴ ≤ 0.65; b. The second barrier layer is (Al) x6 Ga 1-x6 ) y6 In 1-y6 P, where 0.5≤x6≤0.65, 0.52≤y6≤0.65; c. The bandgap transition layer is (Al) x10 Ga 1-x10 ) y10 In 1-y10 P, 0.1≤x10≤0.9, 0.4≤y7≤0.

6.

7. A method for fabricating a high-efficiency 626nm semiconductor laser device according to any one of claims 1-6, comprising performing surface heat treatment on a GaAs substrate in a growth chamber of an MOCVD equipment, characterized in that, From bottom to top, the following layers are epitaxially grown: GaAs buffer layer, AlInP lower confinement layer, first lower waveguide layer, second lower waveguide layer, first quantum well, first barrier layer, and (Al... x5 Ga 1-x5 ) y5 In 1-y5 P second quantum well, second barrier layer, third quantum well, first upper waveguide layer, second upper waveguide layer, AlInP upper confinement layer, bandgap transition layer, GaAs cap layer; In (Al) x1 Ga 1-x1 ) y1 In 1-y1 P is grown on the first lower waveguide layer (Al) x2 Ga 1-x2 ) y2 In 1-y2 The conditions for the second lower waveguide layer of P are: growth temperature 630±10℃, introduction of TMAl, TMGa, TMIn and PH3, adjustment of the flow rate ratio of TMAl and TMGa so that x2 gradually changes from a high value to a low value, with the initial value being the same as x1. In (Al) x7 Ga 1-x7 ) y7 In 1-y7 Growth on the third quantum well (Al) x8 Ga 1-x8 ) y8 In 1-y8 The conditions for the first upper waveguide layer of P are: growth temperature 630±10℃, introduction of TMAl, TMGa, TMIn and PH3, adjustment of the flow rate ratio of TMAl and TMGa so that x8 gradually changes from a low value to a high value, and the termination value is the same as x9.

8. The method for fabricating a high-efficiency 626nm semiconductor laser device according to claim 7, characterized in that, The method includes one or more of the following conditions: i. The doping source of the GaAs buffer layer is Si₂H₆, and the doping concentration is 2E¹⁸-5E¹⁸ atoms / cm². 3 The thickness is 0.1-0.3 μm; preferably, the doping concentration of the GaAs buffer layer is 2E18 atoms / cm³. 3 The thickness is 0.2 μm; ii. The doping source of the AlInP lower confinement layer is Si2H6, and the doping concentration is 2E17-1E18 atoms / cm³. 3 The thickness is 1-3 μm; preferably, the doping concentration of the AlInP lower confinement layer is 5E18 atoms / cm³. 3 The thickness is 2µm; iii. The aforementioned (Al) x1 Ga 1-x1 ) y1 In 1-y1 The doping source for the first lower waveguide layer is Si₂H₆, with a doping concentration of 1E¹⁶-1E¹⁷ atoms / cm². 3 0.65≤x1≤0.8, 0.4≤y1≤0.6, thickness of 200-800nm; preferably, the (Al) x1 Ga 1-x1 ) y1 In 1-y1 The doping concentration of the first lower waveguide layer is 5E16 atoms / cm². 3 x1 = 0.72, y1 = 0.5, thickness is 600nm; iv. The aforementioned (Al) x2 Ga 1-x2 ) y2 In 1-y2 The second lower waveguide layer P is unintentionally doped, with a particle size distribution of 0.3 ≤ x2 ≤ 0.8, 0.52 ≤ y2 ≤ 0.65, and x2 gradually decreasing from a high value to a low value, with the initial value of x2 being the same as x1; preferably, the (Al) x2 Ga 1-x2 ) y2 In 1-y2 In the second lower waveguide layer of P, 0.4≤x2≤0.72, y2=0.57, and x2 gradually changes from 0.72 to 0.4; v. The (Al) x3 Ga 1-x3 ) y3 In 1-y3 The first quantum well, unintentionally doped, has a density of 0.1 ≤ x³ ≤ 0.3, 0.3 ≤ y³ ≤ 0.48, and a thickness of 4-8 nm; preferably, the (Al) x3 Ga 1-x3 ) y3 In 1-y3 In the first quantum well P, x3 = 0.14, y3 = 0.46; vi. The (Al) x4 Ga 1-x4 ) y4 In 1-y4 The first barrier layer is unintentionally doped, with a particle size distribution of 0.5 ≤ x⁴ ≤ 0.65, 0.5² ≤ y⁴ ≤ 0.65, and a thickness of 4-12 nm; preferably, (Al) x4 Ga 1-x4 ) y4 In 1-y4 The thickness of the first barrier layer P is 5 nm, x4 = 0.55, y4 = 0.58; vii. The (Al) x5 Ga 1-x5 ) y5 In 1-y5 The second quantum well, unintentionally doped, has a particle size distribution of 0.1 ≤ x⁵ ≤ 0.3, 0.3 ≤ y⁵ ≤ 0.48, and a thickness of 4-8 nm; preferably, (Al) x5 Ga 1-x5 ) y5 In 1-y5 In the second quantum well P, x5 = 0.14, y5 = 0.46; viii. The (Al) x6 Ga 1-x6 ) y6 In 1-y6 The second barrier layer is unintentionally doped, with a particle size distribution of 0.5 ≤ x6 ≤ 0.65, 0.52 ≤ y6 ≤ 0.65, and a thickness of 4-12 nm; preferably, the (Al) x6 Ga 1-x6 ) y6 In 1-y6 The thickness of the second barrier layer P is 5 nm, x6 = 0.55, y6 = 0.58; ix. The (Al) x7 Ga 1-x7 ) y7 In 1-y7 The third quantum well, unintentionally doped, has a particle size distribution of 0.1 ≤ x₇ ≤ 0.3, 0.3 ≤ y₇ ≤ 0.48, and a thickness of 4-8 nm; preferably, the (Al) x7 Ga 1-x7 ) y7 In 1-y7 In the third quantum well P, x7 = 0.13, y7 = 0.44; x. The (Al) x8 Ga 1-x8 ) y8 In 1-y8 The first upper waveguide layer P is unintentionally doped, with a particle size distribution of 0.3 ≤ x8 ≤ 0.8, 0.52 ≤ y8 ≤ 0.65, where x8 gradually increases from a low value to a high value, and the final value of x8 is the same as that of x9; preferably, the (Al) x8 Ga 1-x8 ) y8 In 1-y8 In the first upper waveguide layer of P, x8 gradually changes from 0.4 to 0.72, and y8 = 0.57; xi. The (Al) x9 Ga 1-x9 ) y9 In 1-y9 The doping source for the second upper waveguide layer is Cp₂Mg or DEZn, with 0.65≤x⁹≤0.8 and 0.4≤y⁹≤0.6, and a doping concentration of 5E¹⁶-3E¹⁷ atoms / cm². 3 The thickness is 200-800 nm; preferably, the (Al) x9 Ga 1-x9 ) y9 In 1-y9 The doping concentration of the second upper waveguide layer is 1E17 atoms / cm². 3 x9 = 0.72, y9 = 0.5, thickness is 600nm; xii. The doping source for the confinement layer on AlInP is Cp₂Mg or DEZn, with a doping concentration of 8E¹⁷-2E¹⁸ atoms / cm². 3 The thickness is 0.9-1.7 μm; preferably, the doping concentration of the confinement layer on the AlInP is 1.2E18 atoms / cm³. 3 The thickness is 1.3 μm; xv. The (Al) x10 Ga 1-x10 ) y10 In 1-y10 The doping source for the p-bandgap transition layer is Cp₂Mg or DEZn, with a doping concentration of 1E¹⁸-3E¹⁸ atoms / cm². 3 0.1≤x10≤0.9, 0.4≤y10≤0.6, thickness of 30-100nm; preferably, the (Al) x10 Ga 1-x10 ) y10 In 1-y10 The thickness of the P-bandgap transition layer is 50 nm, x10 gradually changes from 0.9 to 0.1, y10 = 0.5, and the doping concentration is 2E18 atoms / cm². 3 ; xvi. The thickness of the cap layer is 0.1-1 μm, the doping source is CBr4 or DEZn, and the doping concentration is 2E19-1E20 atoms / cm². 3 Preferably, the thickness of the cap layer is 0.5 μm, and the doping concentration is 4E19 atoms / cm². 3 .

9. The method for fabricating a high-efficiency 626nm semiconductor laser device according to claim 7, characterized in that, After epitaxial growth is completed, it can be treated by Zn-induced ion hybridization technology and dissociation technology in a nitrogen environment. The vacuum degree of the dissociation technology in a nitrogen environment is less than 10^-6 Pa.

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