A kind of street energy utilization material based on directional thermal radiation regulation and preparation method

Abstract

The present application relates to the technical field of energy utilization, and particularly relates to a kind of street block energy utilization materials and preparation method based on directional thermal radiation regulation, material includes base building material and preset microstructure arranged on the upper surface of base building material, method includes: based on the edge profile curve of heat flow diversion area smooth characterization parameter determination heat flow diversion area cleaning is qualified, to adjust argon flow;Based on the quality factor of target material atomic flow determines whether the process state of target material sputtering stage is stable, to adjust target base distance or adjust sputtering power;According to the distribution characterization parameter of island nucleus determines whether the distribution of island nucleus is qualified, to optimize interval adjustment coefficient or optimize power adjustment coefficient;Under the condition that the distribution of island nucleus is qualified, film coating is completed, based on the transition film layer width of heat flow diversion area determines whether the film layer of heat flow diversion area is qualified, to optimize preset smooth characterization parameter.The present application improves the film layer bonding force of heat flow diversion area.

Description

Technical Field

[0001] This invention relates to the field of energy utilization technology, and in particular to a street energy utilization material based on directional thermal radiation regulation and its preparation method. Background Technology

[0002] Thermal radiation is the core mode of energy exchange between buildings and the external environment, and the energy utilization efficiency of urban buildings is closely related to the directional control of thermal radiation. However, most traditional building materials are isotropic in thermal radiation, resulting in indiscriminate energy dissipation and significant energy waste. Among existing directional thermal radiation control technologies, materials based on structures such as micro-nano gratings and photonic crystals can achieve directionality, but their preparation processes are complex and costly, making large-scale application in the construction field difficult. Some high-reflectivity / high-emissivity coating materials, while possessing specific radiation characteristics, lack precise directional control capabilities and are deficient in weather resistance and bonding stability with building substrates, leading to rapid performance degradation under long-term outdoor urban environments. Therefore, to improve the energy utilization efficiency of urban buildings, achieve precise directional control of thermal radiation, and simultaneously meet the requirements of large-scale production, excellent weather resistance, and good compatibility with building substrates, it is urgent to develop an urban energy utilization material based on directional thermal radiation control and its simple and efficient preparation method.

[0003] Chinese Patent Application Publication No. CN118778160A discloses an infrared thermal radiation reflector, comprising a substrate, an anti-corrosion layer, and a reflective optical film. The anti-corrosion layer is disposed on the substrate and is made of nitride. The reflective optical film is disposed on the anti-corrosion layer and comprises a multilayered structure. The multilayered structure includes multiple layers of silicon dioxide material and multiple layers of low-absorption infrared material, and the multiple silicon dioxide material layers and multiple layers of low-absorption infrared material are alternately stacked to form the multilayered structure.

[0004] The existing technology also has the following problems: due to the matrix characteristics of building materials and the geometric effects of microstructures, traditional coating processes are prone to insufficient cleaning in the heat flow turning zone at the micrometer scale, which leads to poor film adhesion at the corners. At the same time, the interaction between the unstable sputtered atomic flow and the complex microstructure surface can lead to uneven growth of island nuclei, ultimately resulting in substandard macroscopic adhesion of the film. Summary of the Invention

[0005] Therefore, the present invention provides a street energy utilization material and preparation method based on directional thermal radiation regulation, in order to overcome the problem that the traditional coating process in the prior art is prone to insufficient cleaning in the heat flow turning zone at the micron scale, which leads to poor film adhesion in the heat flow turning zone.

[0006] To achieve the above objectives, the present invention provides a method for preparing street energy utilization materials based on directional thermal radiation regulation, comprising:

[0007] The base building material is imprinted to form a pre-defined microstructure with emitting and reflecting surfaces on its surface;

[0008] For a single surface layer, in the reverse sputtering cleaning stage based on magnetron sputtering, the smoothing characterization parameters of the edge contour curve of the heat flow turning zone are compared with the preset smoothing characterization parameters to determine whether the cleaning of the heat flow turning zone is qualified, and the argon flow rate is adjusted according to the contact angle of the heat flow turning zone based on the condition that the cleaning of the heat flow turning zone is unqualified.

[0009] The quality factor of the atomic flow of the target material during the target sputtering stage is obtained to determine whether the process state of the target sputtering stage is stable, and several spacing adjustment coefficients are set to adjust the target-substrate distance based on the determination result that the process state of the target sputtering stage is unstable.

[0010] The distribution characterization parameters of island nuclei during the film deposition stage are obtained, and the distribution characterization parameters are used to determine whether the distribution of island nuclei is qualified. If the distribution of island nuclei is determined to be unqualified, the spacing adjustment coefficient is optimized according to the rate of change of the inter-island necking size of the island nuclei.

[0011] The coating process is completed under the condition that the distribution of the island core is qualified. The width of the transition film layer in the heat flow turning zone is obtained. The qualification of the film layer is determined based on the width of the transition film layer. The preset smoothing characterization parameters are optimized based on the determination result of the film layer being unqualified.

[0012] The emitting surface and the reflecting surface are coated sequentially to complete the preparation of the street energy utilization material.

[0013] Furthermore, the process of determining whether the cleaning of the heat flow diversion zone is qualified based on the smoothing characterization parameters includes:

[0014] Calculate several second derivatives of the edge profile curve and determine the maximum value of the second derivatives;

[0015] The full width at half maximum (FWHM) corresponding to the maximum value of the second derivative is determined as the smoothness characterization parameter;

[0016] The smoothing representation parameter is compared with the preset smoothing representation parameter;

[0017] Based on the comparison result that the smoothing characterization parameter is greater than the preset smoothing characterization parameter, it is determined that the cleaning of the heat flow diversion zone is unqualified.

[0018] Furthermore, under the condition that the cleaning of the heat flow diversion zone is unqualified, the process of adjusting the argon flow rate based on the contact angle of the heat flow diversion zone includes:

[0019] Compare the contact angle with the preset contact angle;

[0020] Based on the comparison results of the contact angle being greater than the preset contact angle, several flow rate adjustment coefficients are set to adjust the argon flow rate.

[0021] Furthermore, the process of determining whether the process state of the target sputtering stage is stable based on the quality factor includes:

[0022] Compare the quality factor with the preset quality factor;

[0023] Based on the comparison results of the quality factor being less than the preset quality factor, it is determined that the process state of the target sputtering stage is unstable.

[0024] Furthermore, under the condition that the process state during the target sputtering stage is unstable, the process of adjusting the target-substrate distance or adjusting the sputtering power includes:

[0025] The difference between the preset quality factor and the quality factor is used to obtain the relative difference of the quality factors;

[0026] Compare the relative difference of the quality factors with a preset relative difference;

[0027] Based on the comparison result that the relative difference of the quality factor is less than or equal to the preset relative difference, the target-base distance is adjusted by the spacing adjustment coefficient.

[0028] Based on the comparison result that the relative difference of the quality factor is greater than the preset relative difference, the sputtering power is adjusted by the power adjustment coefficient.

[0029] Furthermore, the process of determining whether the distribution of the island nuclei is qualified based on the distribution characterization parameters of the island nuclei includes:

[0030] The distribution characterization parameters are compared with preset distribution characterization parameters;

[0031] Based on the comparison results of the distribution characterization parameter being less than the preset distribution characterization parameter, it is determined that the distribution of the island nucleus is unqualified.

[0032] Furthermore, under the condition that the distribution of the island nuclei is unqualified, the process of optimizing the spacing adjustment coefficient or optimizing the power adjustment coefficient includes:

[0033] The rate of change of the inter-island necking dimension is compared with a preset rate of change.

[0034] Based on the comparison result that the rate of change is greater than the first preset rate of change, several spacing optimization coefficients are set to optimize the spacing adjustment coefficient;

[0035] Based on the comparison result that the rate of change is less than the second preset rate of change, several power adjustment coefficients are set to optimize the power adjustment coefficients;

[0036] Wherein, the first preset change rate is greater than the second preset change rate.

[0037] Furthermore, the process of determining whether a membrane is qualified based on the width of the transition membrane layer includes:

[0038] The width of the transition film layer is compared with a preset width;

[0039] The membrane layer is determined to be unqualified based on the comparison result that the width of the transition membrane layer is greater than the preset width.

[0040] Furthermore, under the condition that the film layer is determined to be defective, the process of optimizing the preset smoothing characterization parameters includes:

[0041] The difference between the preset width and the width of the transition film layer is used to obtain the width difference value;

[0042] Compare the width difference with a preset difference;

[0043] Based on the comparison result between the width difference and the preset difference, several parameter adjustment coefficients are set to optimize the preset smoothness characterization parameters.

[0044] On the other hand, the present invention also provides a street energy utilization material based on directional thermal radiation regulation, comprising:

[0045] Base building materials;

[0046] A pre-defined microstructure is disposed on the upper surface of the substrate building material, comprising at least one serrated unit continuously arranged in the same direction, wherein each serrated unit includes a reflective film layer for reflecting heat radiation and a reflective film layer for reflecting heat radiation.

[0047] Compared with existing technologies, the advantages of this invention are as follows: In the reverse sputtering cleaning stage of magnetron sputtering coating, this invention dynamically determines the cleaning qualification by real-time acquisition of the edge contour curve of the heat flow conversion zone and calculation of smoothing characterization parameters based on the comparison results of these parameters with preset thresholds, and realizes online monitoring of edge sharpness using second derivative half-width quantization. The heat flow conversion zone, as the functional connection node between the reflective and emitting surfaces, directly determines the accuracy of heat flow orientation control due to the steepness of its edge contour. If cleaning is done only at fixed intervals or through offline sampling, it is difficult to identify microscopic passivation phenomena caused by contaminants. The smoothing characterization parameters can comprehensively reflect the width of the steep edge region and the intensity of contour abrupt changes, and their deviation from preset values ​​can accurately characterize the residual state of contaminants. When cleaning is unqualified, the argon flow rate is adjusted in stages based on the contact angle difference, avoiding the problems of insufficient plasma bombardment or excessive damage caused by traditional fixed flow rate cleaning, ensuring that the edges achieve atomic-level cleanliness and maintain complete geometric morphology, providing an ideal interface foundation for subsequent functional film deposition, thereby improving the film adhesion in the heat flow conversion zone.

[0048] Furthermore, this invention monitors the atomic flux quality factor in real time during the target sputtering stage using a multi-probe ion detector array. It combines sputtering rate fluctuations, the proportion of directionally transported atoms, and average kinetic energy for a multi-parameter weighted assessment of process stability, overcoming the limitations of traditional single-parameter monitoring. During magnetron sputtering, plasma fluctuations and uneven target etching can easily lead to instability in atomic flux density and kinetic energy. The quality factor can detect abnormal fluctuations in atomic flux transport in advance, rather than discovering defects only after film formation through performance testing. When the process is unstable, based on the synergistic judgment of the relative difference in quality factor and kinetic energy parameters, a graded adjustment strategy of target-substrate distance and sputtering power is adopted, rather than traditional empirical single-parameter adjustment. The relative difference threshold determination can accurately distinguish between slight fluctuations and severe instability. The adjustment method of first adjusting the target-substrate distance to fine-tune the spatial distribution of the atomic flux, and then adjusting the power to correct the energy input, can specifically restore the stability of directional atomic flux transport, avoiding the aggravation of film growth defects due to improper parameter adjustment, thereby improving the film adhesion in the heat flux conversion zone.

[0049] Furthermore, this invention assesses interface quality by detecting the width of the transition film after film deposition and optimizes the preset smoothing characterization parameters in the cleaning stage based on the width difference, thus constructing a closed-loop control system for coating process, interface morphology, and thermal flux performance. The width of the transition film directly reflects the interface abrupt change characteristics of the reflective / emissive functional region. Exceeding the standard indicates incomplete edge cleaning leading to abnormal film growth. The width difference can pinpoint the degree of cleaning standard deviation. When the difference exceeds the preset value, the threshold of the smoothing characterization parameter is significantly reduced by adjusting the parameter coefficient to increase the cleaning intensity requirement; when the difference does not exceed the preset value, the threshold is moderately optimized to balance cleaning efficiency and interface protection. Simultaneously, edge cleaning monitoring, atomic flow stability control, and final interface evaluation form a three-level quality control system, ensuring precise control of parameters at each process stage and continuously iterating the cleaning standard through a feedback mechanism, significantly improving the interface integrity of the functional film in the thermal flux conversion zone, thereby enhancing the film adhesion in the thermal flux conversion zone. Attached Figure Description

[0050] Figure 1 This is a flowchart illustrating the preparation method of street energy utilization materials based on directional thermal radiation regulation, as described in an embodiment of the present invention.

[0051] Figure 2 This is a flowchart illustrating the process of determining whether the cleaning of the heat flow diversion zone is qualified according to an embodiment of the present invention;

[0052] Figure 3 A flowchart for determining whether the process state is stable during the target sputtering stage in an embodiment of the present invention;

[0053] Figure 4 This is a schematic diagram of the structure of the street energy utilization material based on directional thermal radiation regulation according to an embodiment of the present invention;

[0054] In the diagram: 1. Base building material, 2. Reflective film layer, 3. Emissive film layer, 4. Heat flow deflection zone. Detailed Implementation

[0055] To make the objectives and advantages of the present invention clearer, the present invention will be further described below with reference to embodiments; it should be understood that the specific embodiments described herein are merely for explaining the present invention and are not intended to limit the present invention.

[0056] Preferred embodiments of the present invention will now be described with reference to the accompanying drawings. Those skilled in the art should understand that these embodiments are merely illustrative of the technical principles of the present invention and are not intended to limit the scope of protection of the present invention.

[0057] Please see Figure 1 As shown, it is a flowchart of the block energy utilization material and preparation method based on directional thermal radiation regulation according to an embodiment of the present invention.

[0058] The present invention provides a method for preparing street energy utilization materials based on directional thermal radiation regulation, comprising:

[0059] Step S1: Imprint the base building material to form a pre-defined microstructure with a radiating surface and a reflecting surface on its surface;

[0060] Step S2: For a single surface layer, in the reverse sputtering cleaning stage based on magnetron sputtering, the comparison result of the smooth characterization parameter of the edge contour curve of the heat flow turning zone with the preset smooth characterization parameter is obtained to determine whether the cleaning of the heat flow turning zone is qualified, and the argon flow rate is adjusted according to the contact angle of the heat flow turning zone based on the condition that the cleaning of the heat flow turning zone is unqualified. The heat flow turning zone is the transition zone between the emitting surface and the reflecting surface.

[0061] Step S3: Obtain the quality factor of the target atomic flow during the target sputtering stage to determine whether the process state of the target sputtering stage is stable, and set several spacing adjustment coefficients to adjust the target-substrate distance based on the determination result that the process state of the target sputtering stage is unstable, or set several power adjustment coefficients to adjust the sputtering power.

[0062] Step S4: Obtain the distribution characterization parameters of the island nuclei during the film deposition stage, and determine whether the distribution of the island nuclei is qualified based on the distribution characterization parameters. If the distribution of the island nuclei is determined to be unqualified, optimize the spacing adjustment coefficient or optimize the power adjustment coefficient based on the rate of change of the inter-island necking size of the island nuclei.

[0063] Step S5: Under the condition that the distribution of the island core is qualified, the coating process is completed, the width of the transition film layer in the heat flow turning zone is obtained, and the qualification of the film layer is determined based on the width of the transition film layer. The preset smoothing characterization parameters are optimized based on the determination result of the film layer being unqualified.

[0064] Step S6: Coating the emitting surface and the reflecting surface sequentially to complete the preparation of the street energy utilization material.

[0065] Specifically, the process of imprinting the base building material involves using a special roller with a surface complementary to the pre-designed microstructure to press it through an imprinting device, thereby obtaining a pre-designed microstructure with a radiating surface and a reflecting surface.

[0066] Specifically, the process of coating a single surface layer sequentially using magnetron sputtering includes a reverse sputtering cleaning stage, a target sputtering stage, a film deposition stage, and a post-treatment stage.

[0067] Understandably, even if the microstructure is pre-designed as serrated, the edge contour at the junction of the reflective and emitting surfaces is often not an ideally sharp straight line at the microscale, but rather a region with a width of micro-nanoscale. When external thermal radiation acts on the serrated microstructure, it first contacts the tilted reflective surface. The incident thermal radiation is projected onto the reflective surface at a specific angle. Due to the metallic lattice resonance effect of the high-reflectivity film, more than 90% of the radiation energy is reflected, and the reflection direction strictly follows the specular reflection law, achieving directional reflection and reflecting the radiation to the airspace far away from the building, preventing heat from entering the building interior. Some of the incident radiation near the edge will propagate towards the emitting surface after reflection, but because the reflective and emitting surfaces form a serrated angle, this part of the reflected radiation will not be directly projected onto the emitting surface, but will continue to diffuse outward along the directional direction of the reflective surface, only attaching to the edge at the junction. The boundary constraint that forms the reflected heat flow is formed. When redundant heat is generated inside the building, the heat is conducted through the base building material to the emitting surface of the sawtooth microstructure. The heat is converted into thermal radiation energy inside the emitting surface and emitted efficiently in the form of long-wave radiation. The emission direction is directional along the normal direction of the emitting surface towards the low-temperature environment outside the building, thus achieving heat dissipation. The emitted radiation near the edge will not be projected onto the reflecting surface due to the angular constraint between the emitting surface and the reflecting surface, thus avoiding being reflected back into the building by the high-reflectivity film. Instead, it forms a unified directional path with the emitted radiation of other areas, and only forms a spatially adjacent distribution with the reflected heat flow near the boundary. Therefore, the core function of the reflective surface is to block external heat radiation from entering the building, while the core function of the emitting surface is to expel redundant heat radiation from inside the building. The synergy of these two functions requires a junction. Without the edge structure at the junction, the reflective and emitting surfaces would form a planar connection, allowing reflected heat to easily be projected onto the emitting surface and absorbed, resulting in heat retention. Similarly, emitted heat would easily be projected onto the reflective surface and reflected back into the building, failing to dissipate heat. The edge structure at the junction avoids mutual interference between the two types of heat flow and allows the reflected and emitted heat flow to form parallel directional paths in space, achieving coordinated regulation of blocking external heat and expelling internal heat. This functional connection essentially represents a shift in the heat flow regulation target, from blocking to expelling. Therefore, this area is a turning point for the heat flow regulation function, i.e., the heat flow turning zone. When using materials with pre-designed microstructures for street energy collection, uneven film layers or deviations in the heat flow turning zone can create thermal resistance. This prevents heat radiation from being efficiently conducted along the designed serrated microstructure coating, causing scattering or localized accumulation of heat during conduction, leading to disordered heat conduction paths, deflected heat radiation directions, and consequently, low heat collection efficiency.

[0068] Specifically, the edge profile curve of the heat flow turning zone refers to the edge height-distance curve constructed by scanning the edge region using an online atomic force microscope.

[0069] Please see Figure 2 As shown, it is a flowchart for determining whether the cleaning of the heat flow diversion zone is qualified according to an embodiment of the present invention.

[0070] Specifically, the process of smoothing the edge contour curve parameters includes:

[0071] Calculate several second derivatives of the edge profile curve and determine the maximum value of the second derivatives;

[0072] The full width at half maximum (FWHM) corresponding to the maximum value of the second derivative is determined as the smoothness characterization parameter.

[0073] Specifically, the process of determining whether the cleaning of the heat flow diversion zone is qualified based on the smoothing characterization parameters includes:

[0074] The smoothing representation parameter is compared with the preset smoothing representation parameter;

[0075] The cleaning qualification of the heat flow diversion zone is determined based on the comparison result that the smooth characterization parameter is less than or equal to the preset smooth characterization parameter;

[0076] Based on the comparison result that the smoothing characterization parameter is greater than the preset smoothing characterization parameter, it is determined that the cleaning of the heat flow diversion zone is unqualified.

[0077] Specifically, the heat flow turning zone is the core area for directional thermal radiation regulation. Under ideal cleaning conditions, there should be no contaminant residue on the edges, and the contour should be sharp and steep. If the cleaning is inadequate, contaminants will adhere to the edges, filling the microscopic depressions or forming additional protrusions at the edges, causing the edge contour to change from sharp to blunt and smooth. The maximum value of the second derivative reflects the steepness of the edge; the sharper the edge, the more drastic the change in height with distance, and the larger the maximum value of the second derivative. The half-width at half-maximum (HWHM) reflects the width of the steep region of the edge; the sharper the edge, the narrower the steep region, and the smaller the HWHM. Conversely, when contaminants cause the edge to become blunt, the steep region widens, and the HWHM increases significantly.

[0078] Specifically, the preset smoothing characterization parameter is set to a value range of [100nm, 150nm], and in this embodiment of the invention, 130nm is preferred.

[0079] Specifically, when it is determined that the cleaning of the heat flow diversion zone is unqualified, the process of adjusting the argon flow rate based on the contact angle of the heat flow diversion zone includes:

[0080] Compare the contact angle with the preset contact angle;

[0081] Based on the comparison results of the contact angle being greater than the preset contact angle, several flow rate adjustment coefficients are set to adjust the argon flow rate.

[0082] Specifically, the contact angle is subtracted from the preset contact angle to obtain the contact angle difference value;

[0083] The contact angle difference is compared with a preset contact angle difference.

[0084] Based on the comparison result that the contact angle difference is greater than the preset contact angle difference, the argon flow rate is adjusted by the first flow rate adjustment coefficient;

[0085] Based on the comparison result that the contact angle difference is less than or equal to the preset contact angle difference, the argon flow rate is adjusted by the second flow rate adjustment coefficient.

[0086] Specifically, the preset contact angle is 40°; the preset contact angle difference is set to a range of [5°, 10°], preferably 8° in this embodiment of the invention; the first flow rate adjustment coefficient is set to a range of [1.2, 1.5], preferably 1.3 in this embodiment of the invention; and the second flow rate adjustment coefficient is set to a range of [1.05, 1.15], preferably 1.1 in this embodiment of the invention.

[0087] Understandably, the contact angle of the heat flow diversion zone reflects its surface cleanliness and wettability. When the cleaning is not up to standard, the contaminants remaining on the edges will cause the surface to change from a hydrophilic / weakly hydrophilic state to a hydrophobic state, resulting in a significant increase in the contact angle. In the reverse sputtering cleaning of the heat flow diversion zone, argon gas removes residual contaminants by bombarding them with high-energy particles of argon plasma. The larger the contact angle, the more serious the contaminant residue. It is necessary to adjust the argon flow rate to enhance the plasma cleaning intensity and reduce the contact angle to the acceptable range, so as to avoid the subsequent decrease in the adhesion of high-reflectivity / high-emissivity film layers and uneven film deposition caused by contaminants.

[0088] Specifically, the quality factor of the target atomic flow in the target sputtering stage refers to the sum of the scores corresponding to the sputtering rate fluctuation, the proportion of transported directional atoms, and the average kinetic energy, respectively, multiplied by their corresponding weighting coefficients.

[0089] Specifically, the sputtering rate fluctuation refers to the percentage of the maximum deviation between the instantaneous deposition rate and the average deposition rate of target atoms on the substrate surface per unit time, relative to the average deposition rate. The weighting coefficient for sputtering rate fluctuation is 0.4. The average kinetic energy refers to the statistical average value of the kinetic energy of a group of neutral atoms escaping from the target surface and transporting to the substrate building material during the target sputtering process. This value can be determined by time-of-flight mass spectrometry, reflection high-energy electron diffraction, or energy analyzer methods. The weighting coefficient for average kinetic energy is 0.2. The weighting coefficient for the proportion of transported directional atoms is 0.4. It is understood that those skilled in the art can select appropriate weighting coefficients based on the target type and substrate material, and no specific limitations are imposed.

[0090] Specifically, the process of determining the proportion of transport-oriented atoms includes:

[0091] With the line connecting the center of the target material to the center of the substrate as the main axis, the multi-probe ion detector array is arranged in the same vertical plane at equal angular intervals around this main axis.

[0092] During the sputtering stage of the target material, the ion current signal of the atomic flow is collected simultaneously. The percentage of the ion current signal collected by the main direction probe to the total ion current signal collected by the multi-probe ion detector array is determined as the proportion of directional atoms transmitted.

[0093] In practice, for example, if the main direction is 0°, the probes can be arranged in the same plane at -30°, -20°, -10°, 0°, 10°, 20°, and 30° respectively. The specific arrangement is not limited, and those skilled in the art can arrange the ion detectors according to actual needs.

[0094] Specifically, the scores corresponding to sputtering rate fluctuation, the proportion of transported directional atoms, and the average kinetic energy are all determined in the following manner:

[0095] Determine the measured value of any parameter, and the upper and lower limits of the ideal range;

[0096] If the measured value is within the ideal range, the corresponding score is 100.

[0097] If the measured value is less than the lower limit of the ideal range, the corresponding score is the product of 100 and the measured value, and the ratio of the product to the lower limit of the ideal range.

[0098] If the measured value is greater than the upper limit of the ideal range, the corresponding score is the product of 100 and the upper limit of the ideal range, and the ratio of the measured value.

[0099] In practice, the ideal range for the proportion of transported directional atoms is set to [85%, 100%]; the ideal range for the sputtering rate fluctuation is set to [-5%, 5%]; and the ideal range for the average kinetic energy is set to [3eV, 8eV]. Taking the proportion of transported directional atoms as an example, if the measured value of the proportion of transported directional atoms is 80%, which is lower than the lower limit of the ideal range, the corresponding score is 100×80% / 85%≈94; if the measured value of the proportion of transported directional atoms is 90%, which is within the ideal range, the corresponding score is 100.

[0100] Please see Figure 3 As shown, it is a flowchart for determining whether the process state of the target sputtering stage is stable according to an embodiment of the present invention.

[0101] Specifically, the process of determining whether the process state of the target sputtering stage is stable based on the quality factor includes:

[0102] Compare the quality factor with the preset quality factor;

[0103] The process status of the target sputtering stage is determined to be stable based on the comparison result that the quality factor is greater than or equal to the preset quality factor.

[0104] Based on the comparison results of the quality factor being less than the preset quality factor, it is determined that the process state of the target sputtering stage is unstable.

[0105] Specifically, the preset quality factor is set to a value range of [65, 80], and in this embodiment of the invention, 70 is preferred.

[0106] It is understandable that the larger the quality factor, the more stable the atomic flow of the target material, that is, the more stable the process state during the target sputtering stage, and the better the final film.

[0107] Specifically, under the condition that the process state during the target sputtering stage is unstable, the process of adjusting the target-substrate distance or adjusting the sputtering power includes:

[0108] The difference between the preset quality factor and the quality factor is used to obtain the relative difference of the quality factors;

[0109] Compare the relative difference of the quality factors with a preset relative difference;

[0110] Based on the comparison result that the relative difference of the quality factor is less than or equal to the preset relative difference, the target-base distance is adjusted by the spacing adjustment coefficient.

[0111] Based on the comparison result that the relative difference of the quality factor is greater than the preset relative difference, the sputtering power is adjusted by the power adjustment coefficient.

[0112] Specifically, under the condition that the relative difference of the quality factor is less than or equal to the preset relative difference, the sputtering rate fluctuation is compared with the preset sputtering rate fluctuation.

[0113] Based on the comparison result that the sputtering rate fluctuation is greater than the preset sputtering rate fluctuation, the target-substrate distance is increased by the spacing adjustment coefficient.

[0114] Specifically, when it is determined that the relative difference of the quality factor is greater than the preset relative difference, the average kinetic energy is compared with the preset kinetic energy;

[0115] Based on the comparison result that the average kinetic energy is greater than the preset kinetic energy, the sputtering power is reduced by a power adjustment coefficient.

[0116] Specifically, the preset relative difference is set to a range of [10%, 15%], preferably 13% in this embodiment; the preset difference is set to a range of [5%, 9%], preferably 7% in this embodiment; the spacing adjustment coefficient is set to a range of [1.06, 1.1], preferably 1.08 in this embodiment; the power adjustment coefficient is set to a range of [0.75, 0.89], preferably 0.8 in this embodiment; the preset sputtering rate fluctuation is 5%, and the preset kinetic energy is 8eV.

[0117] Specifically, the quality factor characterizes the degree of process instability. The smaller the relative difference, the less the process deviates from the ideal state; the larger the relative difference, the more serious the process deviation. Adjusting the target-substrate distance, by changing the atomic flow transmission distance, fine-tunes the atomic flow density and orientation, with little impact on the plasma state, and is suitable for correcting minor process deviations. Adjusting the sputtering power directly changes the energy and density of argon ion bombardment of the target, significantly affecting the atomic escape rate, kinetic energy, and plasma stability, with a fast response speed, and is suitable for correcting severe process deviations.

[0118] Specifically, the process of determining whether the distribution of the island nuclei is acceptable based on the distribution characterization parameters of the island nuclei includes:

[0119] The distribution characterization parameters are compared with preset distribution characterization parameters;

[0120] Based on the comparison result that the distribution characterization parameter is less than the preset distribution characterization parameter, it is determined that the distribution of the island nucleus is unqualified;

[0121] The distribution of the island nuclei is deemed qualified based on the comparison result of the distribution characterization parameter being greater than or equal to the preset distribution characterization parameter.

[0122] Specifically, the process of determining the distribution characteristics parameters of island nuclei includes:

[0123] Obtain images of the distribution of island-like cores on the surface of the substrate building material;

[0124] Based on the processed distribution image, the distance between two adjacent geometric centers is determined using the geometric center of any island nucleus as a reference point, and the geometric centers of the remaining island nuclei are sequentially aligned with the reference point.

[0125] The percentage of non-overlapping areas of two island nuclei is denoted as the island nucleus overlap degree.

[0126] The coefficient of variation of the island spacing is determined as the characterization value of the distribution uniformity of the island nuclei, and the coefficient of variation of the island nuclei overlap degree is determined as the characterization value of the island diameter consistency.

[0127] The reciprocal of the sum of the products of the distribution uniformity characterization value and the island diameter consistency characterization value and the corresponding weight coefficient is determined as the distribution characterization parameter of the island kernel;

[0128] Wherein, the sum of the weighting coefficient of the distribution uniformity characterization value and the weighting coefficient of the island path consistency characterization value is equal to 1.

[0129] Specifically, the preset distribution characterization parameter is set to a value range of [2, 10], and this embodiment of the invention is preferred in 6.

[0130] Understandably, island cores serve as the initial growth template in the early stages of thin film growth. Continuous film layers are formed by the fusion, connection, and spreading of island cores. The distribution quality of island cores directly determines the structural integrity and functional stability of subsequent film layers. Uneven island spacing can lead to early fusion in densely populated areas, resulting in excessively thick film layers due to subsequent atomic deposition, while late fusion in sparsely populated areas results in excessively thin film layers with thickness deviations exceeding ±10%. Uneven island diameters can cause larger islands to fuse preferentially, forming protrusions, while smaller islands fill gaps, forming depressions. This results in a film surface roughness exceeding design requirements, causing directional failure of thermal radiation due to interface scattering, reducing the heat flow conversion efficiency of the energy material, and decreasing the film's density and adhesion, thus weakening its weather resistance and functional durability.

[0131] Specifically, the process of optimizing the spacing adjustment coefficient or the power adjustment coefficient when the distribution of the island nuclei is determined to be substandard includes:

[0132] The rate of change of the inter-island necking dimension is compared with a preset rate of change.

[0133] Based on the comparison result that the rate of change is greater than the first preset rate of change, several spacing optimization coefficients are set to optimize the spacing adjustment coefficient;

[0134] Based on the comparison result that the rate of change is less than the second preset rate of change, several power adjustment coefficients are set to optimize the power adjustment coefficients;

[0135] Wherein, the first preset change rate is greater than the second preset change rate.

[0136] Specifically, the inter-island necking size refers to the minimum width of the contact area when two adjacent island nuclei begin to connect. As the connection process between adjacent island nuclei progresses, the inter-island necking size gradually increases.

[0137] Specifically, when it is determined that the rate of change is greater than the first preset rate of change, the difference between the rate of change and the first preset rate of change is calculated to obtain a first rate difference value.

[0138] Compare the first rate difference with the preset rate difference;

[0139] Based on the comparison result that the first rate difference is greater than or equal to the preset rate difference, the spacing adjustment coefficient is determined to be optimized with a first spacing optimization coefficient.

[0140] Based on the comparison result that the first rate difference is less than the preset rate difference, the spacing adjustment coefficient is determined to be optimized with the second spacing optimization coefficient.

[0141] Specifically, when it is determined that the rate of change is less than the second preset rate of change, the difference between the second preset rate of change and the rate of change is obtained to obtain the second rate difference value;

[0142] Compare the second rate difference with the preset rate difference;

[0143] Based on the comparison result that the second rate difference is greater than or equal to the preset rate difference, the power adjustment coefficient is determined to be optimized with the first power optimization coefficient.

[0144] Based on the comparison result that the second rate difference is less than the preset rate difference, the power adjustment coefficient is determined to be optimized with the second power optimization coefficient.

[0145] Specifically, the first preset rate of change is set to a range of [10nm / min, 15nm / min], preferably 12nm / min in this embodiment; the second preset rate of change is set to a range of [4nm / min, 7nm / min], preferably 5nm / min in this embodiment; the preset rate difference is set to a range of [3nm / min, 5nm / min], preferably 4nm / min in this embodiment; the first spacing optimization coefficient is set to a range of [1.10, 1.15], preferably 1.12 in this embodiment; the second spacing optimization coefficient is set to a range of [1.05, 1.09], preferably 1.06 in this embodiment; the first power optimization coefficient is set to a range of [1.17, 1.26], preferably 1.21 in this embodiment; and the second power optimization coefficient is set to a range of [1.08, 1.16], preferably 1.14 in this embodiment.

[0146] It is understandable that the rate of change of the island necking size directly reflects the island nuclear fusion efficiency. If the change is too fast, it indicates that the atomic flux density is too high, which can easily lead to rough film. It is necessary to increase the target-substrate distance by optimizing the spacing adjustment coefficient to reduce the atomic flux density. If the change is too slow, it indicates that the atomic kinetic energy is insufficient or the density is too low, which can easily lead to film porosity. It is necessary to increase the sputtering power by optimizing the power adjustment coefficient.

[0147] Specifically, the process of determining whether the film layer is qualified based on the width of the transition film layer includes:

[0148] The width of the transition film layer is compared with a preset width;

[0149] The membrane layer is determined to be unqualified based on the comparison result that the width of the transition membrane layer is greater than the preset width.

[0150] The membrane is deemed qualified based on the comparison results of whether the width of the transition membrane is less than or equal to the preset width.

[0151] Specifically, the width of the transition film refers to the length of the space in the heat flow conversion zone of the sawtooth microstructure, along the direction perpendicular to the geometric boundary between the emitting and reflecting surfaces, from a position where the emissivity of the long-wavelength 10 μm is greater than or equal to 0.85 to a position where the reflectivity of the short-wavelength 500 nm is greater than or equal to 85%.

[0152] Specifically, the preset width is set to a value range of [5nm, 10nm], and in this embodiment of the invention, 7nm is preferred.

[0153] Specifically, under the condition that the film layer is determined to be unqualified, the process of optimizing the preset smoothing characterization parameters includes:

[0154] The difference between the preset width and the width of the transition film layer is used to obtain the width difference value;

[0155] Compare the width difference with a preset difference;

[0156] Based on the comparison result between the width difference and the preset difference, several parameter adjustment coefficients are set to optimize the preset smoothness characterization parameters.

[0157] Specifically, based on the comparison result that the width difference is greater than the preset difference, the preset smoothing characterization parameter is optimized by the first parameter adjustment coefficient.

[0158] Based on the comparison result that the width difference is less than or equal to the preset difference, the preset smoothing characterization parameter is optimized by adjusting the second parameter coefficient.

[0159] Specifically, the preset difference value is set to a range of [2nm, 5nm], and preferably 3nm in this embodiment of the invention; the first parameter adjustment coefficient is set to a range of [0.78, 0.84], and preferably 0.81 in this embodiment of the invention; the second parameter adjustment coefficient is set to a range of [0.86, 0.92], and preferably 0.88 in this embodiment of the invention.

[0160] Please see Figure 4 As shown, it is a structural schematic diagram of the street energy utilization material based on directional thermal radiation regulation according to an embodiment of the present invention.

[0161] This invention relates to street energy utilization materials based on directional thermal radiation regulation, comprising:

[0162] The base building material 1; a pre-set microstructure is disposed on the upper surface of the base building material, including at least one serrated unit continuously arranged in the same direction, each serrated unit including a reflective film layer 2 for reflecting heat radiation and a reflective film layer 3 for reflecting heat radiation.

[0163] Specifically, the base building material 1 can have an alumina content of ≥95% and a bulk density of ≥3.6 g / cm³. 3 Flexural strength ≥300MPa, coefficient of thermal expansion 6.5×10 -6 The alumina ceramic substrate has a temperature range of 20-500℃; the emitting film layer 3 can be a silicon dioxide-titanium dioxide composite oxide film with a film thickness of 150nm±5nm, wherein the mass ratio of silicon dioxide to titanium dioxide is 7:3; the reflective film layer 2 can be a high-purity aluminum film with a purity greater than or equal to 99.99% and a film thickness of 100nm±3nm.

[0164] Specifically, the sawtooth microstructure has a sawtooth angle of 60°, an angle of 30° between the emitting surface and the surface of the substrate building material, a single sawtooth height of 500μm, and a single sawtooth width of 866μm.

[0165] It is understood that the parameter values ​​for the aforementioned materials and serrated microstructures are not limited to these values. Those skilled in the art can adjust the specific materials and parameters according to the actual application scenario, such as the building installation location and the target heat flow control direction.

[0166] Specifically, the street energy utilization material based on directional thermal radiation regulation in this embodiment of the invention can collect thermal radiation in an orderly and fixed path to a centralized energy collection system by reasonably arranging and adjusting the installation angle of the material in multi-story buildings in the street and utilizing the reflection and emission characteristics of light. This energy collection system can be connected to an energy storage device for the storage and reuse of thermal energy. The converted energy can be used for building heating, domestic hot water, and cross-seasonal heat storage, realizing regional distributed clean heating and efficient energy utilization.

[0167] The technical solution of the present invention has been described above with reference to the preferred embodiments shown in the accompanying drawings. However, it will be readily understood by those skilled in the art that the scope of protection of the present invention is obviously not limited to these specific embodiments. Without departing from the principles of the present invention, those skilled in the art can make equivalent changes or substitutions to the relevant technical features, and the technical solutions after these changes or substitutions will all fall within the scope of protection of the present invention.

Claims

1. A method for preparing street energy utilization materials based on directional thermal radiation regulation, characterized in that, include: The base building material is imprinted to form a pre-defined microstructure with emitting and reflecting surfaces on its surface; For a single surface layer, in the reverse sputtering cleaning stage based on magnetron sputtering, the smoothing characterization parameters of the edge contour curve of the heat flow turning zone are compared with the preset smoothing characterization parameters to determine whether the cleaning of the heat flow turning zone is qualified, and the argon flow rate is adjusted according to the contact angle of the heat flow turning zone based on the condition that the cleaning of the heat flow turning zone is unqualified. The quality factor of the target atomic flow during the target sputtering stage is obtained to determine whether the process state of the target sputtering stage is stable. Based on the determination result that the process state of the target sputtering stage is unstable, several spacing adjustment coefficients are set to adjust the target-substrate distance. The quality factor refers to the sum of the products of the sputtering rate fluctuation of the target atomic flow, the proportion of transported directional atoms, and the average kinetic energy, respectively, with the corresponding weight coefficients. The distribution characterization parameters of island nuclei during the film deposition stage are obtained, and the distribution characterization parameters are used to determine whether the distribution of island nuclei is qualified. If the distribution of island nuclei is determined to be unqualified, the spacing adjustment coefficient is optimized according to the rate of change of the inter-island necking size of the island nuclei. The coating process is completed under the condition that the distribution of the island core is qualified. The width of the transition film layer in the heat flow turning zone is obtained. The qualification of the film layer is determined based on the width of the transition film layer. The preset smoothing characterization parameters are optimized based on the determination result of the film layer being unqualified. The emitting surface and the reflecting surface are coated sequentially to complete the preparation of the street energy utilization material; The process of determining whether the cleaning of the heat flow diversion zone is qualified based on the smoothing characterization parameters includes, Calculate several second derivatives of the edge profile curve and determine the maximum value of the second derivatives; The full width at half maximum (FWHM) corresponding to the maximum value of the second derivative is determined as the smoothness characterization parameter; The smoothing representation parameter is compared with the preset smoothing representation parameter; Based on the comparison result that the smoothing characterization parameter is greater than the preset smoothing characterization parameter, it is determined that the cleaning of the heat flow diversion zone is unqualified.

2. The method for preparing street energy utilization materials based on directional thermal radiation regulation according to claim 1, characterized in that, If the cleaning of the heat flow diversion zone is determined to be substandard, the process of adjusting the argon flow rate based on the contact angle of the heat flow diversion zone includes: Compare the contact angle with the preset contact angle; Based on the comparison results of the contact angle being greater than the preset contact angle, several flow rate adjustment coefficients are set to adjust the argon flow rate.

3. The method for preparing street energy utilization materials based on directional thermal radiation regulation according to claim 2, characterized in that, The process of determining whether the process state of the target sputtering stage is stable based on the quality factor includes: Compare the quality factor with the preset quality factor; Based on the comparison results of the quality factor being less than the preset quality factor, it is determined that the process state of the target sputtering stage is unstable.

4. The method for preparing street energy utilization materials based on directional thermal radiation regulation according to claim 3, characterized in that, Under the condition that the process state during the target sputtering stage is unstable, the process of adjusting the target-substrate distance or adjusting the sputtering power includes: The difference between the preset quality factor and the quality factor is used to obtain the relative difference of the quality factors; Compare the relative difference of the quality factors with a preset relative difference; Based on the comparison result that the relative difference of the quality factor is less than or equal to the preset relative difference, the target-base distance is adjusted by the spacing adjustment coefficient. Based on the comparison result that the relative difference of the quality factor is greater than the preset relative difference, the sputtering power is adjusted by the power adjustment coefficient.

5. The method for preparing street energy utilization materials based on directional thermal radiation regulation according to claim 4, characterized in that, The process of determining whether the distribution of the island nuclei is qualified based on the distribution characterization parameters of the island nuclei includes: The distribution characterization parameters are compared with preset distribution characterization parameters; Based on the comparison results of the distribution characterization parameter being less than the preset distribution characterization parameter, it is determined that the distribution of the island nucleus is unqualified.

6. The method for preparing street energy utilization materials based on directional thermal radiation regulation according to claim 5, characterized in that, The process of optimizing the spacing adjustment coefficient or the power adjustment coefficient under the condition that the distribution of the island nuclei is unqualified includes: The rate of change of the inter-island necking dimension is compared with a preset rate of change. Based on the comparison result that the rate of change is greater than the first preset rate of change, several spacing optimization coefficients are set to optimize the spacing adjustment coefficient; Based on the comparison result that the rate of change is less than the second preset rate of change, several power adjustment coefficients are set to optimize the power adjustment coefficients; Wherein, the first preset change rate is greater than the second preset change rate.

7. The method for preparing street energy utilization materials based on directional thermal radiation regulation according to claim 6, characterized in that, The process of determining whether a membrane layer is qualified based on the width of the transition membrane layer includes: The width of the transition film layer is compared with a preset width; The membrane layer is determined to be unqualified based on the comparison result that the width of the transition membrane layer is greater than the preset width.

8. The method for preparing street energy utilization materials based on directional thermal radiation regulation according to claim 7, characterized in that, The process of optimizing the preset smoothing characterization parameters under the condition that the film layer is unqualified includes: The difference between the preset width and the width of the transition film layer is used to obtain the width difference value; Compare the width difference with a preset difference; Based on the comparison result between the width difference and the preset difference, several parameter adjustment coefficients are set to optimize the preset smoothness characterization parameters.

9. A street energy utilization material based on directional thermal radiation regulation, prepared using the preparation method of street energy utilization material based on directional thermal radiation regulation according to any one of claims 1-8, characterized in that, include: Base building materials; A pre-defined microstructure is disposed on the upper surface of the substrate building material, comprising at least one serrated unit continuously arranged in the same direction, wherein each serrated unit includes a reflective film layer for reflecting heat radiation and a reflective film layer for reflecting heat radiation.

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