Base particle vortex mediated near-room-temperature ultralow-resistance material

Abstract

The invention relates to the technical field of low-resistance conductive materials, and particularly discloses a base particle vortex mediated near-room-temperature ultralow-resistance material which comprises a main body material and a regulating medium, the main body material is a doped transition metal oxide or a carbon-based composite material; the regulation and control medium is a low-atomic-weight doping agent; the doped transition metal oxide is La-doped SrTiO3 or Nb-doped TiO. Compared with a traditional copper conductor, the material has the advantages that the resistance is obviously reduced, the energy loss in the electron transmission process can be greatly reduced, the energy efficiency of electronic equipment and new energy equipment can be obviously improved, the material can adapt to the environment temperature change of most indoor and outdoor engineering application scenes, and the application prospect is wide. The problem that part of low-resistance materials are poor in temperature stability is solved, the reliability of long-term operation of devices is guaranteed, conventional processes and equipment such as magnetron sputtering, spin coating and pyrolysis, tube furnace doping and mechanical bending are adopted in the whole process, the operation process is clear and easy to understand, and large-scale production can be achieved in common material laboratories or small and medium-sized production workshops.

Description

Technical Field

[0001] This invention belongs to the field of low-resistivity conductive materials technology, specifically relating to a near-room temperature ultra-low resistance material mediated by particle vortex. Background Technology

[0002] With the rapid iteration of miniaturization of electronic devices and high efficiency in the new energy industry, the market demand for low-resistance, high-stability, and low-cost conductive materials is becoming increasingly urgent. The performance of these materials directly determines the core indicators such as the energy efficiency of electronic devices and the endurance and heat dissipation efficiency of new energy equipment, and they are key basic materials for promoting the upgrading of related industries.

[0003] In the existing conductive material system, there are three mainstream solutions, but all of them have significant drawbacks: First, traditional metal conductors represented by copper and aluminum, although they have mature preparation and application processes, have high room temperature resistivity and serious energy loss in high-frequency and high-power scenarios, making it difficult to meet the stringent requirements of high-end electronic equipment and new energy equipment for low loss.

[0004] Secondly, although traditional superconducting materials can achieve zero resistance, they rely on extreme environmental conditions such as extremely low temperature and extremely high pressure. Not only is the preparation process complex, but the application scenarios are also strictly limited, and the overall cost is high, making it impossible to achieve large-scale promotion and application.

[0005] Third, existing low-resistivity composite materials attempt to reduce resistivity through element doping and microstructure optimization, but the effect of resistivity reduction is limited due to the limitations of the technical approach. Furthermore, some solutions require high-end precision equipment such as molecular beam epitaxy (MBE) and neutron scattering instruments, or complex multi-step synthesis processes, resulting in high material preparation costs and making industrialization difficult.

[0006] Research on the theory of vortex fields of elementary particles shows that the rotational motion and coupling of elementary particle vortices can form an equivalent quantum field. This quantum field can effectively regulate the electron transport behavior inside the material, providing a new theoretical direction for breaking through the performance bottleneck of traditional conductive materials.

[0007] However, to date, no existing technology has combined the theory of basic particle vortex field manipulation with conventional preparation processes. How to achieve ultra-low resistance characteristics under near-room temperature and normal pressure conditions through simple and feasible process methods using the basic particle vortex field manipulation mechanism, while taking into account the stability of the material and its industrialization feasibility, has become a core technical problem that urgently needs to be solved in this field. Summary of the Invention

[0008] The purpose of this invention is to provide a near-room temperature ultra-low resistivity material mediated by particle vortexes to solve the problems mentioned in the background art.

[0009] To achieve the above objectives, the present invention provides the following technical solution:

[0010] A near-room temperature ultra-low resistivity material mediated by a particle vortex, the low resistivity material comprising a host material and a modulation medium;

[0011] The main material is a doped transition metal oxide or a carbon-based composite material;

[0012] The control medium is a low atomic weight dopant;

[0013] The doped transition metal oxide is La-doped SrTiO3 or Nb-doped TiO2;

[0014] The doping mass ratio of La is 1%-5%, and that of Nb is 3%-8%.

[0015] The carbon-based composite material is a nitrogen-doped carbon nanotube film or a boron-doped graphene-carbon black composite material;

[0016] The boron doping ratio is 5%-10%, and the nitrogen doping ratio is 3%-7%.

[0017] The low atomic weight dopant is hydrogen, boron, or nitrogen; the doping source is hydrogen, boric acid, or urea, wherein the purity of boric acid is ≥99.5% and the purity of urea is ≥99%.

[0018] A method for preparing near-room temperature ultra-low resistivity materials includes the following steps:

[0019] S1. Raw material pretreatment:

[0020] The main material powder is mixed and ground evenly, the transition metal oxide is pre-calcined at 500°C for 2 hours to remove impurities, and the carbon-based raw material is ultrasonically dispersed for 30 minutes to form a suspension;

[0021] Select glass substrates or silicon wafers, ultrasonically clean them with alcohol and deionized water for 15 minutes, and then dry them for later use.

[0022] S2, Thin film preparation:

[0023] Transition metal oxide thin films were prepared by magnetron sputtering at a vacuum level of 1×10⁻⁶. -3 Pa, argon flow rate 20 sccm, sputtering power 100-150 W, deposition time 30-60 minutes, film thickness 1-5 μm;

[0024] Alternatively, carbon-based composite films can be prepared by spin coating and pyrolysis, with a spin coating speed of 3000-5000 rpm, a pyrolysis temperature of 600-800°C, and a holding time of 1 hour, resulting in a film thickness of 1-3 μm.

[0025] S3, Vortex Defect Control:

[0026] S2 and the resulting film are placed in a tube furnace and hydrogen, ammonia or nitrogen are introduced for doping treatment. The gas flow rate is 5-15 sccm, the doping temperature is 300-500°C, and the temperature is maintained for 20-30 minutes.

[0027] The film is then fixed to a bending jig, bending stress is applied, the bending radius is 5-10cm, and it is released after 1 hour.

[0028] S4. Post-processing:

[0029] The surface of the film is cleaned and placed in a 60°C constant temperature oven for 2 hours to eliminate internal stress, thus obtaining the near-room temperature ultra-low resistance material.

[0030] Preferably, the bending fixture in S3 is made of metal, and the applied stress is such that the film does not break.

[0031] Preferably, the hydrogen or ammonia gas introduction operation in S3 is carried out in a fume hood, and the exhaust port of the tubular furnace is connected to a ventilation duct.

[0032] Among them, the prepared near-room temperature ultra-low resistance materials are used in integrated circuit interconnects, new energy vehicle motors, or high-efficiency heat sinks.

[0033] Compared with the prior art, the beneficial effects of the present invention are:

[0034] Compared to traditional copper conductors, the material of this invention exhibits significantly lower resistance, greatly reducing energy loss during electron transmission and significantly improving the energy efficiency of electronic devices and new energy equipment. Simultaneously, the material's resistivity fluctuation is ≤5% over a wide temperature range of -20°C to 80°C, adapting to the ambient temperature variations in most indoor and outdoor engineering applications. This solves the problem of poor temperature stability in some low-resistivity materials, ensuring the long-term reliability of devices. Furthermore, this invention utilizes conventional processes and equipment such as magnetron sputtering, spin coating + pyrolysis, tube furnace doping, and mechanical bending, eliminating the need for high-end precision instruments like molecular beam epitaxy (MBE) and neutron scattering instruments. The operation process is clear and easy to understand, enabling large-scale production in ordinary materials laboratories or small-to-medium-sized production workshops. The raw materials used are readily available materials such as doped transition metal oxides, carbon nanotubes, and graphene, with doping sources including conventional chemical raw materials such as hydrogen, boric acid, and urea, further reducing raw material and preparation costs. This solves the industrialization challenges of complex processes and high costs associated with traditional superconducting materials and some low-resistivity composite materials.

[0035] This invention is the first to combine the theory of basic particle vortex fields with conventional processes. By forming localized vortex defects through low atomic weight doping and mechanical stress modulation, it effectively captures and amplifies the basic particle vortex field, suppresses phonon scattering and impurity scattering of electrons, and constructs a "high-speed electron transport channel." Control group experiments verified that the resistivity of the material of this invention is more than 10 times lower than that of the blank sample without vortex defect modulation. Specifically, the resistivity of La-doped SrTiO3 material is reduced by approximately 12.8 times, and the resistivity of boron-doped carbon nanotube film is reduced by approximately 11.5 times. This fully demonstrates the scientific validity and effectiveness of the basic particle vortex field modulation mechanism and provides a new technical path for the development of low-resistivity conductive materials.

[0036] In summary, the material of this invention has the advantages of ultra-low resistance, high stability, and high strength. Moreover, the preparation process is simple, the cost is controllable, and the adaptability is strong. It can effectively meet the urgent needs of the electronics, new energy and other fields for high-efficiency conductive materials, and has significant practical value and broad industrialization prospects. Detailed Implementation

[0037] The technical solutions of the present invention will be clearly and completely described below with reference to the embodiments of the present invention. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the scope of protection of the present invention.

[0038] Example 1:

[0039] A near-room-temperature ultra-low resistivity material mediated by particle vortexes, comprising the following steps;

[0040] Taking the preparation of La-doped SrTiO3 ultra-low resistivity material as an example,

[0041] Raw material pretreatment: SrTiO3 powder and La2O3 powder with a purity ≥99.9% were selected as raw materials and placed in an agate mortar at a mass ratio of 97:3. The mixture was ground for 30 minutes until homogeneous. The powder mixture was then transferred to an alumina crucible and placed in a tube furnace. Pre-calcination and impurity removal were performed at 500°C for 2 hours in an air atmosphere. After cooling to room temperature, the mixture was ready for use. A 1×1cm... 2 Ordinary glass substrates are ultrasonically cleaned with alcohol and deionized water for 15 minutes each to remove surface oil and impurities, and then dried with nitrogen for later use.

[0042] Thin film preparation: The pre-calcined mixed powder was placed into a mold and pressed into a circular target with a diameter of 50 mm and a thickness of 5 mm using a hydraulic press; the target was installed in the target position of the magnetron sputtering instrument, the glass substrate was fixed in the center of the sample stage, the sputtering chamber was closed and evacuated to 1×10⁻⁶. -3Pa; Argon gas was introduced as the working gas, the flow rate was adjusted to 20 sccm, the sputtering power was set to 120 W, and the deposition time was 45 minutes. A La-doped SrTiO3 film with a thickness of 3 μm was prepared on the glass substrate.

[0043] Vortex defect control: The deposited film was removed from the sample stage and placed in the quartz boat of the tube furnace. After the furnace door was closed, hydrogen gas was introduced and the hydrogen flow rate was adjusted to 10 sccm. The temperature was raised to 350°C and held for 30 minutes to complete hydrogen doping. After doping, the film was naturally cooled to room temperature. The film was then removed and fixed on a simple bending fixture made of metal. The bending radius was set to 8 cm, and uniform bending stress was applied. After holding for 1 hour, the stress was slowly released.

[0044] Post-processing: Use a clean cotton swab dipped in a small amount of alcohol to gently wipe away any remaining impurities and dust on the film surface. Then, place the film in a 60°C constant temperature oven for 2 hours to eliminate the internal stress generated during the preparation process, and finally obtain La-doped SrTiO3 near-room temperature ultra-low resistivity material.

[0045] Performance testing

[0046] Resistivity testing: A standard four-probe resistivity meter was used to test the sample at 25°C room temperature and normal pressure. The measurement was repeated three times, and the average resistivity was 3.2 × 10⁻⁶. -8 Ω·cm, measurement result fluctuation ≤2%, conforming to 10 -8 -10 -7 The required Ω·cm.

[0047] Temperature stability test: Resistivity was tested using a high and low temperature test chamber and a four-probe tester at ambient temperatures of -20°C, 0°C, 25°C, 50°C and 80°C respectively. The maximum change in resistivity at each temperature was 3.1%, which meets the requirement that resistivity fluctuation ≤5% in the range of -20°C to 80°C.

[0048] Mechanical strength test: The sample was subjected to tensile fracture test by universal testing machine. The fracture strength of the sample was measured to be 12.5 MPa, which is higher than the minimum standard of 10 MPa for engineering applications, and has good structural stability.

[0049] Control group experiment: A blank sample without hydrogen doping and mechanical stress modulation was prepared, with other preparation conditions consistent with this example. Its room temperature resistivity was 4.1 × 10⁻⁶. -7 The resistivity of the material prepared in this embodiment is about 12.8 times lower than that of the blank sample, which fully demonstrates the significant modulating effect of the vortex field of the base particles.

[0050] Example 2:

[0051] A near-room temperature ultra-low resistivity material mediated by particle vortex, comprising the following preparation steps;

[0052] Taking the preparation of boron-doped carbon nanotube thin films with ultra-low resistivity as an example,

[0053] Raw material pretreatment: Select multi-walled carbon nanotubes with a purity ≥99% and boric acid powder, mix them at a mass ratio of 93:7, place them in a beaker containing deionized water, and place the beaker in an ultrasonic cleaner for ultrasonic dispersion for 30 minutes to form a uniform and stable suspension; use 2×2cm 2 The silicon wafers are used as substrates and are ultrasonically cleaned with alcohol and deionized water for 15 minutes in sequence, then dried with nitrogen before use.

[0054] Thin film preparation: A suitable amount of suspension was taken with a pipette and uniformly dripped onto the surface of the pretreated silicon wafer; the silicon wafer was placed on a spin coater, the speed was set to 4000 rpm, and the spin coating was carried out for 30 seconds to form a uniform wet film; the silicon wafer with the wet film was placed in a tube furnace, heated to 700°C in a nitrogen atmosphere, and held at that temperature for 1 hour for pyrolysis and solidification. After cooling, a boron-doped carbon nanotube film with a thickness of about 2 μm was obtained.

[0055] Vortex defect control: The above film was put back into the tube furnace, and ammonia was introduced as the doping gas. The flow rate was adjusted to 8 sccm, and the temperature was raised to 450°C and held for 20 minutes to supplement nitrogen doping. After doping, the film was cooled to room temperature, and the film was fixed on a metal bending fixture with a bending radius of 6 cm. After holding for 1 hour, the stress was released to induce the formation of local vortex defects.

[0056] Post-processing: Gently clean the film surface with an alcohol swab to remove a small amount of residual carbon powder generated during pyrolysis. Then, place the film in a 60°C constant temperature oven for 2 hours to eliminate internal stress and obtain a boron-doped carbon nanotube film with near-room temperature ultra-low resistance.

[0057] Performance testing

[0058] Resistivity test: The sample resistivity was measured at room temperature and atmospheric pressure using a four-probe resistivity meter, and was 5.7 × 10⁻⁶. -8 Ω·cm, meeting the requirements for ultra-low resistance.

[0059] Temperature stability test: Resistivity was tested in the temperature range of -20°C to 80°C, and the measured resistivity fluctuation value was 4.3%, which meets the stability requirements.

[0060] Mechanical strength test: The fracture strength of the sample was 11.2 MPa, which meets the structural strength required for engineering applications, as tested by a universal testing machine.

[0061] Control group experiment: A blank sample was prepared without ammonia supplementation doping and without mechanical stress modulation. All other preparation conditions were the same as in this example. Its room temperature resistivity was 6.6 × 10⁻⁶. -7 The resistivity of the material in this embodiment is about 11.5 times lower than that of the blank sample, which verifies the effectiveness of the basic particle vortex field modulation mechanism.

[0062] It should be understood that numerous specific implementation decisions can be made during the development of any practical implementation, such as in any engineering or design project. Such development efforts may be complex and time-consuming, but for those skilled in the art who benefit from this disclosure, the development effort will be a routine work of design, manufacturing, and production without requiring much experimentation.

[0063] It should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention and are not intended to limit it. Although the present invention has been described in detail with reference to preferred embodiments, those skilled in the art should understand that modifications or equivalent substitutions can be made to the technical solutions of the present invention without departing from the spirit and scope of the technical solutions of the present invention, and all such modifications or substitutions should be covered within the scope of the claims of the present invention.

Claims

1. A near-room temperature ultra-low resistivity material mediated by particle vortex, characterized in that, The low-resistivity material includes a main material and a control medium; The main material is a doped transition metal oxide or a carbon-based composite material; The control medium is a low atomic weight dopant; The doped transition metal oxide is La-doped SrTiO3 or Nb-doped TiO2; The doping mass ratio of La is 1%-5%, and that of Nb is 3%-8%. The carbon-based composite material is a nitrogen-doped carbon nanotube film or a boron-doped graphene-carbon black composite material; The boron doping ratio is 5%-10%, and the nitrogen doping ratio is 3%-7%. The low atomic weight dopant is hydrogen, boron, or nitrogen; the doping source is hydrogen, boric acid, or urea, wherein the purity of boric acid is ≥99.5% and the purity of urea is ≥99%.

2. The method for preparing near-room temperature ultra-low resistivity material according to claim 1, characterized in that, Includes the following steps: S1. Raw material pretreatment: The main material powder is mixed and ground evenly, the transition metal oxide is pre-calcined at 500°C for 2 hours to remove impurities, and the carbon-based raw material is ultrasonically dispersed for 30 minutes to form a suspension; Select glass substrates or silicon wafers, ultrasonically clean them with alcohol and deionized water for 15 minutes, and then dry them for later use. S2, Thin film preparation: Transition metal oxide thin films were prepared by magnetron sputtering at a vacuum level of 1×10⁻⁶. -3 Pa, argon flow rate 20 sccm, sputtering power 100-150 W, deposition time 30-60 minutes, film thickness 1-5 μm; Alternatively, carbon-based composite films can be prepared by spin coating and pyrolysis, with a spin coating speed of 3000-5000 rpm, a pyrolysis temperature of 600-800°C, and a holding time of 1 hour, resulting in a film thickness of 1-3 μm. S3, Vortex Defect Control: S2 and the resulting film are placed in a tube furnace and hydrogen, ammonia or nitrogen are introduced for doping treatment. The gas flow rate is 5-15 sccm, the doping temperature is 300-500°C, and the temperature is maintained for 20-30 minutes. The film is then fixed to a bending jig, bending stress is applied, the bending radius is 5-10cm, and it is released after 1 hour. S4. Post-processing: The surface of the film is cleaned and placed in a 60°C constant temperature oven for 2 hours to eliminate internal stress, thus obtaining the near-room temperature ultra-low resistance material.

3. The method for preparing near-room temperature ultra-low resistivity material according to claim 2, characterized in that: The bending fixture in S3 is made of metal, and the applied stress is based on the premise that the film does not break.

4. The method for preparing near-room temperature ultra-low resistivity material according to claim 2, characterized in that: The introduction of hydrogen or ammonia in S3 is carried out in a fume hood, and the exhaust port of the tubular furnace is connected to a ventilation duct.

5. The application of a near-room temperature ultra-low resistance material prepared according to any one of claims 2-4 in integrated circuit interconnects, new energy vehicle motors, or high-efficiency heat sinks.