Ion implantation method, manufacturing apparatus, apparatus, medium and program product

Abstract

The embodiment of the invention provides an ion implantation method, manufacturing equipment, equipment, a medium and a program product, and the method comprises the steps: obtaining a plurality of groups of resistance information corresponding to a wafer after an ion implantation machine carries out the multiple times of ion implantation processing of the wafer; wherein one group of resistance information corresponds to one-time ion implantation processing of the wafer, the process parameters corresponding to each time of ion implantation processing are consistent, the taper angles of the target disc are different when the wafer is placed on the target disc, and the target disc is located in the ion implantation machine table; target group resistance information is selected from the multiple groups of resistance information, and the taper angle corresponding to the target group resistance information serves as the target taper angle of the target disc; and in response to an adjusting signal corresponding to the target taper angle, adjusting the taper angle of the corresponding target disc, and performing ion implantation processing on the wafer placed on the target disc. By adopting the technical scheme, the film forming quality of the ion implantation process can be improved.

Description

Technical Field

[0001] This disclosure relates to the field of semiconductor manufacturing technology, and more particularly to an ion implantation method, manufacturing equipment, apparatus, medium, and process product. Background Technology

[0002] In semiconductor manufacturing, ion implantation is a core process for achieving key steps such as source / drain doping and well region formation in transistors. As device dimensions shrink to the nanometer scale, the requirements for the uniformity of the implantation profile become increasingly stringent.

[0003] In actual implantation, the ion implantation angles at different radii of the wafer are different, resulting in deeper implantation in the middle region and shallower implantation in the edge region, and the resulting film structure cannot meet the requirements.

[0004] Against this backdrop, how to provide technical solutions to improve the film formation quality of ion implantation processes has become a technical problem that urgently needs to be solved by those skilled in the art. Summary of the Invention

[0005] In view of this, the present disclosure provides an ion implantation method, manufacturing apparatus, equipment, medium, and process product that can improve the film quality of the ion implantation process.

[0006] This disclosure provides an ion implantation method, including:

[0007] After the ion implantation machine performs multiple ion implantation processes on the wafer, multiple sets of resistance information corresponding to the wafer are obtained; wherein, one set of resistance information corresponds to one ion implantation process of the wafer, and the process parameters corresponding to each ion implantation process are the same, while the cone angle of the target disk is different when the wafer is placed on the target disk, and the target disk is located inside the ion implantation machine.

[0008] Select the target group resistance information from multiple groups of resistance information, and take the cone angle corresponding to the target group resistance information as the target cone angle of the target disk;

[0009] In response to an adjustment signal corresponding to the target cone angle, the cone angle of the corresponding target disk is adjusted, and ion implantation is performed on the wafer placed on the target disk.

[0010] Optionally, the acquisition of multiple sets of resistance information corresponding to the wafer after the ion implantation machine performs multiple ion implantation processes on the wafer includes:

[0011] For any ion implantation process of the wafer, obtain the sheet resistance value corresponding to each sampling point on the wafer after the ion implantation process.

[0012] Based on the sheet resistance value corresponding to each sampling point, the mean square error of the sheet resistance corresponding to each ion implantation is determined, and the sheet resistance value corresponding to each sampling point and the corresponding mean square error of the sheet resistance are used as the resistance information of the wafer after any ion implantation process.

[0013] Optionally, selecting the target group of resistance information from multiple groups of resistance information includes:

[0014] Compare the mean square error of the sheet resistance in each group of resistance information, and take the sheet resistance information with the smallest mean square error of sheet resistance, and when the corresponding maximum sheet resistance value does not exceed a preset threshold, take the corresponding sheet resistance information as the target group resistance information.

[0015] Optionally, the ion implantation equipment includes:

[0016] The base has a light detection through-hole;

[0017] A rotating shaft, which passes through the center of the base and is rotatably connected to the base;

[0018] A rotating disk is sleeved on a rotating shaft and located on one side of the base, and is configured to rotate in conjunction with the rotating shaft;

[0019] Multiple carrier components, each carrier component including a connected connecting rod and a target disk, are arranged at intervals along the circumference of the rotating disk. Each connecting rod is fixedly connected to the rotating disk. The light detection through hole is located between two adjacent carrier components in the carrier component array.

[0020] Optionally, the step of adjusting the cone angle of the corresponding target disk in response to an adjustment signal corresponding to the target cone angle, and performing ion implantation on the wafer placed on the target disk, includes:

[0021] When the target disk has the target cone angle, the implantation angle during the ion implantation process is changed, and a set of electrical parameter information corresponding to each ion implantation process is obtained.

[0022] Based on electrical parameter information, target group parameter information is selected from multiple sets of electrical parameter information, and the ion implantation parameters corresponding to the ion implantation treatment of the target group parameter information are used as the actual implantation parameters.

[0023] A processing signal corresponding to the actual implantation parameters is generated, and the processing signal is used to control the ion implanter to perform ion implantation on the wafer according to the actual implantation parameters.

[0024] Optionally, for any ion implantation process of the wafer, before obtaining the corresponding resistance information, the process further includes: performing an annealing process on the ion-implanted wafer.

[0025] Accordingly, this disclosure also provides a manufacturing apparatus, including:

[0026] An ion implantation apparatus includes a target disk for supporting a wafer, configured to perform multiple ion implantation processes on the wafer; wherein the process parameters corresponding to each ion implantation process are consistent, but the cone angle of the target disk is different when the wafer is placed on the target disk; and, when the target disk has a target cone angle, the wafer placed on the target disk is subjected to ion implantation.

[0027] The control unit is configured to acquire multiple sets of resistance information corresponding to the wafer after the ion implantation machine performs multiple ion implantation processes on the wafer; wherein, one set of resistance information corresponds to one ion implantation process of the wafer; and to select target set of resistance information from the multiple sets of resistance information, and take the cone angle corresponding to the target set of resistance information as the target cone angle of the target disk, and to generate an adjustment signal corresponding to the target cone angle, the adjustment signal being used to control the adjustment of the cone angle of the corresponding target disk.

[0028] This disclosure also provides a data processing device, including a memory and a processor, wherein the memory is adapted to store one or more computer instructions, and the processor executes the ion implantation method described in any of the preceding embodiments when running the computer instructions.

[0029] This disclosure also provides a computer-readable storage medium storing computer instructions that, when executed, perform the ion implantation method described in any of the preceding embodiments.

[0030] This disclosure also provides a computer program product, including computer instructions that, when executed by a processor, implement the ion implantation method described in any of the preceding embodiments.

[0031] Compared with the prior art, the technical solution of the present invention has the following advantages:

[0032] The ion implantation method provided in this disclosure can acquire multiple sets of resistance information corresponding to the wafer after multiple ion implantation processes performed by the ion implantation machine. Then, it can select the target set of resistance information from these multiple sets. This allows the cone angle corresponding to the ion implantation process of the target set of resistance information to be used as the target cone angle of the target disk, thereby controlling the cone angle of the target disk and performing ion implantation on the wafer at the target cone angle. This mitigates the adverse effects caused by the cone angle effect, improves the uniformity of the implantation process, and thus enhances the film quality of the ion implantation process. Attached Figure Description

[0033] To more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings used in the description of the embodiments of the present invention or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0034] Figure 1 A schematic diagram illustrating the principle of a cone angle effect is shown;

[0035] Figure 2 An electron microscope image of a wafer after ion implantation is shown;

[0036] Figure 3 A flowchart of an ion implantation method according to an embodiment of the present disclosure is shown;

[0037] Figure 4 A flowchart illustrating an embodiment of the present disclosure for obtaining resistance information is shown;

[0038] Figure 5 An electron microscope image of a wafer after ion implantation is shown in one embodiment of the present disclosure;

[0039] Figure 6 A schematic diagram of the structure of an ion implantation apparatus according to an embodiment of the present disclosure is shown;

[0040] Figure 7 A schematic diagram of a manufacturing apparatus according to an embodiment of the present disclosure is shown. Detailed Implementation

[0041] As described in the background section, during the actual implantation process, the ion implantation angles differ at different radii of the wafer, resulting in deeper implantation in the central region and shallower implantation in the edge region. This is because:

[0042] For batch high-energy ion implanters, a unique large rotary table structure is used. Due to the presence of centrifugal force, the target disk used to place the wafer is set at an angle (i.e., a cone angle) during the operation to prevent the wafer from being thrown out during the operation.

[0043] However, due to the presence of the cone angle, a cone angle effect occurs during implantation, resulting in different ion implantation angles at different radii on the wafer. When the implantation angle is 0 degrees, the center of the wafer is implanted more deeply, while the edges are implanted less deeply, producing a unique pattern.

[0044] See Figure 1 The diagram shown illustrates the principle of a cone angle effect, as follows: Figure 1As shown, wafer 12 has a channel 13, and ions 11 are implanted into the channel 13 of wafer 12. Due to the presence of the cone angle, the implantation depth of ions 11 at different locations on wafer 12 is inconsistent.

[0045] Specifically, the ion implantation depth 14 in the central region is deeper than that in the edge region, which will reduce device performance and yield. For example, if the junction depth in the edge region is too shallow and the junction depth in the central region is too deep, the tunneling effect will be enhanced, leading to an increase in junction leakage current.

[0046] Line 15 is used to simulate the flow path of ions 11 entering channel 13.

[0047] In some examples, the uniformity of the implantation process is characterized by measuring the resistance of the wafer after ion implantation.

[0048] See Figure 2 The image shown is an electron microscope image of a wafer after ion implantation, as follows: Figure 2 As shown, the different colored areas represent the sheet resistance values ​​of the ion-implanted film, and the black dots in the figure are used to indicate the locations sampled by the probes on the wafer surface when measuring the resistance of the wafer.

[0049] Due to the cone angle effect, along Figure 2 As indicated by the double-headed arrow A, the sheet resistance value changes from high to low.

[0050] More specifically, the sheet resistance is highest in the central region of the wafer (e.g., the blue region) and lower in the edge region (e.g., the red region), indicating poor ion distribution uniformity.

[0051] To address the aforementioned technical problems, this disclosure provides an ion implantation method capable of acquiring multiple sets of resistance information corresponding to a wafer after multiple ion implantation processes performed by an ion implantation machine. This allows for the selection of a target set of resistance information from these multiple sets. The cone angle corresponding to the ion implantation process of the target set of resistance information can be used as the target cone angle of the target disk, thereby controlling the cone angle of the target disk and enabling ion implantation of the wafer at the target cone angle. This mitigates the adverse effects caused by the cone angle effect, improves the uniformity of the implantation process, and ultimately enhances the film quality of the ion implantation process.

[0052] To enable those skilled in the art to have a clearer understanding of the technical concepts, principles, advantages, etc. contained in the embodiments of this disclosure, a detailed description will be provided below with reference to the accompanying drawings, specific embodiments, and specific application scenarios.

[0053] See Figure 3 The flowchart of an ion implantation method in an embodiment of this disclosure is shown below. Figure 3As shown, the ion implantation process can be performed using the following steps.

[0054] S31, after the ion implantation machine performs multiple ion implantation processes on the wafer, obtain multiple sets of resistance information corresponding to the wafer.

[0055] Specifically, when an ion implantation machine performs a single ion implantation on a wafer, the wafer's electrical properties are altered. By performing a measurement process on the wafer, a set of parameter information corresponding to each ion implantation can be obtained; that is, a set of resistance information corresponding to one ion implantation treatment of the wafer. By performing multiple ion implantation treatments on the wafer, the resistance information of the wafer during each ion implantation treatment can be obtained, resulting in multiple sets of parameter information.

[0056] In some examples, when multiple ion implantation processes are performed on a wafer using an ion implantation machine, the process parameters for each ion implantation process are consistent.

[0057] In some examples, "process parameters" may include: ion implantation energy and ion implantation dose, ion implantation type, duration, temperature, pressure, etc. That is, using the same ion implantation equipment and the same process parameters to perform multiple ion implantation processes on the wafer.

[0058] It should be noted that "multiple ion implantation processes" does not refer to ion implantation on a single wafer, but rather each ion implantation corresponds to a single wafer with identical parameters.

[0059] In some examples, the wafer is placed on a target disk with a different cone angle, and the target disk is located inside the ion implantation stage.

[0060] Specifically, when performing multiple ion implantation processes, each ion implantation process corresponds to a cone angle of the target disk, thereby obtaining resistance information at different cone angles.

[0061] The target disk is a key component that supports the wafer and performs ion implantation, ensuring that the wafer remains stable and does not shift under high-speed, high-energy ion beam bombardment.

[0062] The cone angle of the target disk refers to the angle between the target disk plane and its rotation axis in the vertical direction. Ion implantation equipment is equipped with a tilt / twist rotation mechanism, which is activated to change the cone angle of the target disk.

[0063] In some examples, "resistance information" can refer to a type of information that can characterize the actual state of the ion implanted layer formed under the corresponding process parameters. It may include a specific parameter value or multiple parameter values, and this disclosure does not impose any restrictions on it.

[0064] For example, the resistance information may include one or more sheet resistance values.

[0065] In some examples, by setting the process parameters for each ion implantation process to be consistent, the actual situation of the ion implantation layer formed by the same ion implantation machine under different cone angles can be reflected, so that the cone angle parameters that meet the requirements can be obtained in the future.

[0066] In some examples, different film layers can be formed through ion implantation:

[0067] Well regions, for example: N-well (donor impurities, such as phosphorus and arsenic, implanted on a P-type substrate); P-well (acceptor impurities, such as boron, implanted on an N-type substrate); dual-well (simultaneous implantation on a P-type or N-type substrate to form adjacent N-wells and P-wells for realizing CMOS structures); deep well: wells with lower implantation doses and higher energy for deeper isolation.

[0068] Heavy doped source / drain: After the gate and sidewalls are formed, a high dose of implantation is used to form the low-resistance electrode connections of the device.

[0069] Lightly doped drain: After gate formation and before main source / drain implantation, a low-energy, low-dose implantation is performed. This is used to reduce the electric field strength near the drain end and suppress hot carrier effects.

[0070] Halo: A non-uniform, angled injection into the channel below the source / drain end. Used to suppress short-channel effects and enhance inversion control in the channel region.

[0071] Channel layer: An appropriate amount of impurities of the opposite type are implanted into the channel region beneath the gate. By precisely controlling the implantation dose and energy, the threshold voltage of the transistor can be adjusted to achieve the design target value.

[0072] Puncture barrier layer: A deeper and heavier doped layer (usually P-type, such as boron) is implanted under high-voltage devices or channels to prevent the source and drain regions from punching through in the off state.

[0073] Polysilicon gate, impurities are injected into the polysilicon gate electrode.

[0074] It should be noted that the above film structure is only an example and does not limit the film structure formed by ion implantation process.

[0075] S32, select the target group resistance information from multiple groups of resistance information, and take the cone angle corresponding to the target group resistance information as the target cone angle of the target disk.

[0076] Specifically, the target set of resistance information refers to the set of resistance information that the ion implantation equipment aims to select when performing ion implantation on a wafer. This target set of resistance information is used to characterize the optimal parameter information obtainable using the current ion implantation process, thus serving as a benchmark for subsequent ion implantation processes.

[0077] Since a set of resistance information corresponds to one ion implantation process on a wafer, there is a correspondence between the resistance information and the cone angle. When determining the target set of resistance information, the cone angle information of the target set of resistance information can be used as the target cone angle of the target disk to perform ion implantation processes on other wafers.

[0078] In some examples, reference parameter information can also be used to select target group resistance information.

[0079] For example, the reference parameter information is a set of resistance information expected to be formed when the ion implantation machine performs ion implantation on the first wafer. When it is determined that there is a target set of resistance information that meets the reference parameter information among multiple sets of resistance information, it indicates that the cone angle of the target disk meets the manufacturing requirements.

[0080] It should be noted that, for any ion implantation process of the wafer, before obtaining the corresponding resistance information, the process also includes: performing an annealing process on the ion-implanted wafer.

[0081] By performing an annealing process, lattice damage can be repaired, allowing silicon atoms to move and rearrange back into their original single-crystal structure, thereby improving the accuracy of the obtained resistance information.

[0082] In some examples, the annealing process includes: rapid annealing, conventional annealing, laser annealing, high-temperature annealing, or low-temperature annealing. In this embodiment, high-temperature annealing is used.

[0083] S33, in response to an adjustment signal corresponding to the target cone angle, adjust the cone angle of the corresponding target disk and perform ion implantation on the wafer placed on the target disk.

[0084] Specifically, by using steps S31 and S32, at least one target cone angle can be obtained, thereby generating an adjustment signal to adjust the cone angle of the corresponding target disk so that the cone angle of the target disk is the target cone angle. In this way, when the wafer is placed on the target disk with the target cone angle, the adverse effects caused by the cone angle effect can be mitigated during the ion implantation process, thereby improving the uniformity of the implantation process and thus improving the film formation quality of the ion implantation process.

[0085] In one example, the target cone angle can be 3 degrees.

[0086] In actual ion implantation processes, the sheet resistance value of the wafer after ion implantation can be used as resistance information.

[0087] For example, see Figure 4 The flowchart shown in one embodiment of this disclosure illustrates a method for obtaining resistance information, as follows: Figure 4 As shown, steps S41 to S43 may be included.

[0088] S41, for any ion implantation process of the wafer, obtain the sheet resistance value corresponding to each sampling point on the wafer after the ion implantation process.

[0089] In some examples, during any ion implantation process, the sheet resistance value corresponding to each sampling point in the wafer can be obtained by measuring each sampling point; the sheet resistance value can reflect whether the electrical performance of the ion implantation layer of the wafer meets the requirements after ion implantation.

[0090] In some other examples, resistance information also includes: volume resistance, line resistance, etc.

[0091] In some examples, the sheet resistance of each sampling point is obtained using a resistance tester. The resistance tester may include a four-probe tester or a multimeter. In this embodiment, the resistance tester is a four-probe tester.

[0092] More specifically, four probes are pressed onto the surface of the sample (i.e., the wafer) under a certain pressure. A current I is passed between two of the probes, and a certain voltage V is generated between the other two probes. The sheet resistance is calculated based on the voltage V, the measurement method, and the current I.

[0093] For example, a current is passed between probes 1 and 4, and a voltage V is measured between probes 2 and 3.

[0094] S42, based on the sheet resistance value corresponding to each sampling point, determine the sheet resistance root mean square error corresponding to each ion implantation, and use the sheet resistance value corresponding to each sampling point and the corresponding sheet resistance root mean square error as the resistance information of the wafer after any ion implantation process.

[0095] In some examples, the sheet resistance values ​​at multiple sampling points can be determined, thereby enabling the determination of the root mean square error of the sheet resistance corresponding to the ion implantation layer for a single ion implantation treatment, which reflects the uniformity of the sheet resistance distribution.

[0096] For example, suppose there are 10 sampling points. By measuring, the corresponding sheet resistance values ​​R1 to R10 can be obtained. By processing these 10 sheet resistance values, the root mean square error of the corresponding sheet resistance can be determined.

[0097] In some examples, when determining the sheet resistance at each sampling point, the difference between the maximum and minimum sheet resistance can also be obtained separately to further reflect the resistance uniformity after ion implantation.

[0098] In some examples, multiple sets of resistance information on the wafer are obtained after multiple ion implantation processes. The target set of resistance information can be selected from the multiple sets of resistance information based on the sheet resistance value and the sheet resistance mean square error in each set of resistance information.

[0099] For example, the mean square error of the sheet resistance in each group of resistance information is compared, and the sheet resistance information with the smallest mean square error of the sheet resistance, and whose corresponding maximum sheet resistance value does not exceed a preset threshold, is taken as the target group of resistance information.

[0100] Specifically, when multiple ion implantation processes are performed on a wafer using different cone angles, multiple maximum sheet resistance values ​​and their corresponding sheet resistance root mean square errors can be obtained. That is, one ion implantation process corresponds to the measurement of one maximum sheet resistance value and the corresponding sheet resistance root mean square error.

[0101] By comparing the mean square errors of the sheet resistances, the one with the smallest mean square error can be selected. If the maximum sheet resistance value corresponding to this smallest mean square error does not exceed a preset threshold, it indicates that the resistance information at this cone angle meets the manufacturing requirements.

[0102] In some alternative examples, when there are no resistance parameters that simultaneously meet the above conditions, the ion implantation parameters of the wafer can be readjusted until resistance parameters that meet the set requirements are obtained.

[0103] In some optional examples, when multiple resistance parameters satisfying the above conditions are available simultaneously, the maximum difference in sheet resistance values ​​during each ion implantation can also be compared. The resistance information with the smallest maximum difference is selected as the target group resistance information.

[0104] In other words, by using the ion implantation method in this scheme, the resistance information of the target group can be selected, and the cone angle of the corresponding target disk can be adjusted to the target cone angle. In this way, by maintaining the cone angle of the target disk and adjusting the parameters of the ion implantation process, the film quality of the ion implantation process can be improved.

[0105] It should be noted that the process parameters of the ion implantation process used in the step of selecting the target group resistance information are the same as those of the mass production wafer, so as to more accurately guide the ion implantation process of the mass production wafer.

[0106] In actual ion implantation processes, the inventors further discovered that different implantation angles of the beam also affect film quality. In this scheme, the implantation angle can be further optimized when determining the target cone angle.

[0107] For example, when executing the aforementioned scheme, if the target disk can have a target cone angle, the implantation angle during the ion implantation process is changed, and a set of electrical parameter information corresponding to each ion implantation process is obtained; based on the electrical parameter information, target group parameter information is selected from multiple sets of electrical parameter information, and the ion implantation parameters corresponding to the ion implantation process of the target group parameter information are used as actual implantation parameters; a processing signal corresponding to the actual implantation parameters is generated, and the processing signal is used to control the ion implantation machine to perform ion implantation processing on the wafer according to the actual implantation parameters.

[0108] Specifically, the cone angle of the target disk is adjusted to achieve the target cone angle. Under these conditions, multiple ion implantation processes are performed, with all parameters remaining the same except for the implantation angle. This allows us to obtain electrical parameter information corresponding to each implantation angle.

[0109] By comparing each electrical parameter information separately, at least one target group of parameter information can be selected, and then the ion implantation parameters corresponding to the target group of parameter information can be used as the actual implantation parameters.

[0110] Next, under the conditions of the target cone angle and the target implantation angle, ion implantation is performed on the wafer to carry out mass production operations.

[0111] By changing the cone angle of the target disk and the injection angle of the beam in the batch high-energy injection machine, the cone angle effect can be mitigated and the film quality can be improved.

[0112] Combination Figure 2 See Figure 5 The image shown is an electron microscope image of a wafer after ion implantation, according to one embodiment of this disclosure. Figure 5 As shown, by giving the target disk a target cone angle, the cone angle effect is improved, thereby reducing the difference in sheet resistance values ​​between different regions of the wafer.

[0113] Compared to Figure 2 The sheet resistance distribution shown is as follows. Figure 5 The sheet resistance distribution is more uniform, and the differences between sheet resistances are further reduced.

[0114] In some examples, the ion implantation equipment typically includes multiple target disks, each of which can have its optimal cone angle determined in the manner described above.

[0115] See Figure 6The diagram shown is a structural schematic of an ion implantation apparatus according to an embodiment of this disclosure, as follows: Figure 6 As shown, the ion implantation stage 60 may include:

[0116] The base 61 has a light detection through hole 62;

[0117] A rotating shaft 63 passes through the center of the base 61 and is rotatably connected to the base 61;

[0118] A rotating disk 64 is sleeved on a rotating shaft 63 and located on one side of the base 61, and is configured to be rotatably engaged with the rotating shaft 63.

[0119] Multiple carrier components (not shown in the figure) are provided. Each carrier component includes a connected connecting rod 65 and a target disk 66, and they are arranged at intervals along the circumference of the rotating disk 64. Each connecting rod 65 is fixedly connected to the rotating disk 64. The light detection through hole 62 is located between two adjacent carrier components in the carrier component array.

[0120] In some examples, the wafer is placed on a target disk 66, which has a tapered angle. During ion implantation, the pedestal 61 moves, thereby moving the wafer to implant ions into it.

[0121] In some examples, there is a gap between the bottom surface of the target disk 66 and the base 61. This reduces the drag when the target disk 66 moves.

[0122] It should be noted that, firstly, for the sake of ease of description of the technical solution of this disclosure and to highlight the innovative aspects of this disclosure, the specific process of ion implantation is not described in detail in the embodiments of this disclosure. For the specific process of ion implantation, please refer to existing examples. Secondly, in actual ion implantation processes, the ion implantation equipment may also include other components; only components related to the cone angle are shown here. For more details regarding ion implantation equipment, please refer to existing examples.

[0123] It should be noted that the reason for opening the "optical detection through-hole 62" in this scheme is to determine whether the ion beam is stable by detecting the parameters of the ion beam on both sides of the optical detection through-hole 62.

[0124] For example, by detecting the total charge carried by the number of ions passing through a given cross section per unit time, when the difference in the total charge on both sides of the detection light detection aperture 62 is determined to be within a preset range, it indicates that the ion beam is in a stable state.

[0125] This disclosure also provides manufacturing equipment corresponding to the ion implantation method described in any of the above embodiments, which will be described below. It should be noted that the description of the manufacturing equipment below can be referred to in conjunction with the description of the ion implantation method above.

[0126] In some embodiments of this disclosure, see Figure 7 The diagram shown is a structural schematic of a manufacturing apparatus according to an embodiment of this disclosure, as follows: Figure 7 As shown, the manufacturing equipment 70 includes:

[0127] An ion implanter 71 includes a target disk (not shown) for holding a wafer and is configured to perform multiple ion implantation processes on the wafer; wherein the process parameters corresponding to each ion implantation process are the same, but the cone angle of the target disk is different when the wafer is placed on the target disk; and, when the target disk has a target cone angle, the wafer placed on the target disk is subjected to ion implantation.

[0128] The control unit 72 is configured to acquire multiple sets of resistance information corresponding to the wafer after the ion implantation machine performs multiple ion implantation processes on the wafer; wherein, one set of resistance information corresponds to one ion implantation process of the wafer; and to select target set of resistance information from the multiple sets of resistance information, and take the cone angle corresponding to the target set of resistance information as the target cone angle of the target disk, and generate an adjustment signal corresponding to the target cone angle, the adjustment signal being used to control the adjustment of the cone angle of the corresponding target disk.

[0129] Using the manufacturing equipment 60 in this embodiment, multiple sets of resistance information corresponding to the wafer can be acquired after multiple ion implantation processes performed by the ion implantation machine. Then, target resistance information can be selected from these multiple sets of resistance information. This allows the cone angle corresponding to the ion implantation process of the target resistance information to be used as the target cone angle of the target disk, thereby controlling the cone angle of the target disk and performing ion implantation on the wafer at the target cone angle. This mitigates the adverse effects caused by the cone angle effect, improves the uniformity of the implantation process, and thus enhances the film quality of the ion implantation process.

[0130] In some examples of this disclosure, a set of parameter information may include at least one parameter value, which includes a sheet resistance value.

[0131] Accordingly, for any ion implantation process on the wafer, the control unit can determine the corresponding resistance information in the following manner:

[0132] For any ion implantation process of the wafer, obtain the sheet resistance value corresponding to each sampling point on the wafer after the ion implantation process; determine the sheet resistance root mean square error corresponding to each ion implantation based on the sheet resistance value corresponding to each sampling point, and use the sheet resistance value corresponding to each sampling point and the corresponding sheet resistance root mean square error as the resistance information of the wafer after any ion implantation process.

[0133] In some examples, during any ion implantation process, the sheet resistance value corresponding to each sampling point in the wafer can be obtained by measuring each sampling point; the sheet resistance value can reflect whether the electrical performance of the ion implantation layer of the wafer meets the requirements after ion implantation.

[0134] Furthermore, by calculating the sheet resistance of each ion implantation treatment, the root mean square error of the sheet resistance corresponding to the ion implantation layer can be determined for each ion implantation treatment, reflecting the uniformity of the sheet resistance distribution. This allows us to obtain resistance information including the sheet resistance value and the corresponding root mean square error.

[0135] In some examples, the control unit acquires multiple sets of resistance information on the wafer after multiple ion implantation processes. It can select the target set of resistance information from the multiple sets of resistance information based on the sheet resistance value and the sheet resistance mean square error in each set of resistance information.

[0136] For example, the mean square error of the sheet resistance in each group of resistance information is compared, and when the mean square error of the sheet resistance and the corresponding maximum sheet resistance value do not exceed a preset threshold, the corresponding sheet resistance information is taken as the target group resistance information.

[0137] Specifically, when multiple ion implantation processes are performed on a wafer using different cone angles, multiple maximum sheet resistance values ​​and their corresponding sheet resistance root mean square errors can be obtained. That is, one ion implantation process corresponds to the measurement of one maximum sheet resistance value and the corresponding sheet resistance root mean square error.

[0138] By comparing the mean square errors of the sheet resistances, the one with the smallest mean square error can be selected. If the maximum sheet resistance value corresponding to this smallest mean square error does not exceed a preset threshold, it indicates that the resistance information at this cone angle meets the manufacturing requirements.

[0139] In some alternative examples, when there are no resistance parameters that simultaneously meet the above conditions, the ion implantation parameters of the wafer can be readjusted until resistance parameters that meet the set requirements are obtained.

[0140] In some optional examples, when multiple resistance parameters satisfying the above conditions are available simultaneously, the maximum difference in sheet resistance values ​​during each ion implantation can also be compared. The resistance information with the smallest maximum difference is selected as the target group resistance information.

[0141] In other words, by using the ion implantation method in this scheme, the resistance information of the target group can be selected, and the cone angle of the corresponding target disk can be adjusted to the target cone angle. In this way, by maintaining the cone angle of the target disk and adjusting the parameters of the ion implantation process, the film quality of the ion implantation process can be improved.

[0142] In actual ion implantation processes, the inventors further discovered that different implantation angles of the beam also affect the film quality. In this scheme, the implantation angle can be further optimized when determining the target cone angle.

[0143] For example, when executing the aforementioned scheme, if the target disk can have a target cone angle, the implantation angle during the ion implantation process is changed, and a set of electrical parameter information corresponding to each ion implantation process is obtained; based on the electrical parameter information, target group parameter information is selected from multiple sets of electrical parameter information, and the ion implantation parameters corresponding to the ion implantation process of the target group parameter information are used as actual implantation parameters; a processing signal corresponding to the actual implantation parameters is generated, and the processing signal is used to control the ion implantation machine to perform ion implantation processing on the wafer according to the actual implantation parameters.

[0144] Specifically, the cone angle of the target disk is adjusted to achieve the target cone angle. Under these conditions, multiple ion implantation processes are performed, with all parameters remaining the same except for the implantation angle. This allows us to obtain electrical parameter information corresponding to each implantation angle.

[0145] By comparing each electrical parameter information separately, at least one target group of parameter information can be selected, and then the ion implantation parameters corresponding to the target group of parameter information can be used as the actual implantation parameters.

[0146] Next, under the conditions of the target cone angle and the target implantation angle, ion implantation is performed on the wafer to carry out mass production operations.

[0147] By changing the cone angle of the target disk and the injection angle of the beam in the batch high-energy injection machine, the cone angle effect can be mitigated and the film quality can be improved.

[0148] This disclosure also provides a data processing device, which may include a memory and a processor. The memory and the processor can communicate with each other via a communication bus. The memory stores computer instructions that can be executed on the processor. When the processor executes the computer instructions, it can perform the ion implantation method described in any of the above embodiments. For details, please refer to the above-mentioned related content, which will not be repeated here.

[0149] In specific implementations, the processor may include a central processing unit, a field-programmable gate array, etc.

[0150] The memory may include random access memory (RAM), read-only memory (ROM), non-volatile memory (NVM), etc.

[0151] In practice, computer instructions may include any suitable type of code implemented using any appropriate high-level, low-level, object-oriented, visual, compiled, and / or interpreted programming language, such as source code, compiled code, interpreted code, executable code, static code, dynamic code, encrypted code, etc.

[0152] In some examples, the data processing device may further include a display interface and a display connected via the display interface. The display interface may communicate with the memory and the processor via a communication bus. The display may display the results obtained by the processor executing the ion implantation method provided in the embodiments of this disclosure, such as parameter information of the gate oxide layer and process parameters corresponding to each ion implantation process.

[0153] In some examples, the data processing device may also include a data output interface that can communicate with a memory and a processor via a communication bus to output data from the ion implantation process.

[0154] This disclosure also provides a computer-readable storage medium storing computer instructions thereon, which, when executed, can perform the ion implantation method described in any of the above embodiments of this disclosure. For details, please refer to the above-mentioned related content, which will not be repeated here.

[0155] The computer-readable storage medium may include any suitable type of memory cell, memory device, memory article, memory medium, storage device, storage article, storage medium and / or storage cell. Examples include memory, removable or non-removable media, erasable or non-erasable media, writable or rewritable media, digital or analog media, hard disk, floppy disk, optical disc read-only memory (CDROM), recordable optical disc (CD-R), rewritable optical disc (CD-RW), optical disc, magnetic media, magneto-optical media, removable memory cards or disks, various types of digital universal optical discs (DVDs), magnetic tape, cassette tape, etc.

[0156] Furthermore, computer instructions may include any suitable type of code implemented using any appropriate high-level, low-level, object-oriented, visual, compiled, and / or interpreted programming language, such as source code, compiled code, interpreted code, executable code, static code, dynamic code, encrypted code, etc.

[0157] The present invention also provides a computer program product, which may include computer instructions. When the computer instructions are executed by a processor, they implement the ion implantation method described in any of the above embodiments of the present invention. For details, please refer to the above-mentioned related content, which will not be repeated here.

[0158] It is understood that terms such as "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Therefore, a feature defined with terms such as "first" and "second" may explicitly or implicitly include one or more of that feature. Furthermore, terms such as "first" and "second" are used to distinguish similar objects and are not necessarily used to describe a specific order or indicate importance. It is understood that such terms can be interchanged where appropriate so that the embodiments of this disclosure described herein can be implemented in orders other than those illustrated or described herein.

[0159] While the embodiments disclosed herein are as described above, the invention is not limited thereto. Any person skilled in the art can make various modifications and alterations without departing from the spirit and scope of the invention; therefore, the scope of protection of this invention should be determined by the scope defined in the claims.

Claims

1. An ion implantation method, characterized in that, include: After the ion implantation machine performs multiple ion implantation processes on the wafer, multiple sets of resistance information corresponding to the wafer are obtained; wherein, one set of resistance information corresponds to one ion implantation process of the wafer, and the process parameters corresponding to each ion implantation process are the same, while the cone angle of the target disk is different when the wafer is placed on the target disk, and the target disk is located inside the ion implantation machine. Select the target group resistance information from multiple groups of resistance information, and take the cone angle corresponding to the target group resistance information as the target cone angle of the target disk; In response to an adjustment signal corresponding to the target cone angle, the cone angle of the corresponding target disk is adjusted, and ion implantation is performed on the wafer placed on the target disk.

2. The ion implantation method according to claim 1, characterized in that, The acquisition of multiple sets of resistance information corresponding to the wafer after the ion implantation machine performs multiple ion implantation processes on the wafer includes: For any ion implantation process of the wafer, obtain the sheet resistance value corresponding to each sampling point on the wafer after the ion implantation process. Based on the sheet resistance value corresponding to each sampling point, the mean square error of the sheet resistance corresponding to each ion implantation is determined, and the sheet resistance value corresponding to each sampling point and the corresponding mean square error of the sheet resistance are used as the resistance information of the wafer after any ion implantation process.

3. The ion implantation method according to claim 2, characterized in that, The step of selecting the target group of resistance information from multiple groups of resistance information includes: The standard deviation of sheet resistance in each group of resistance information is compared, and the sheet resistance information with the smallest standard deviation of sheet resistance, and whose corresponding maximum sheet resistance value does not exceed a preset threshold, is taken as the target group of resistance information.

4. The ion implantation method according to claim 1, characterized in that, The ion implantation equipment includes: The base has a light detection through-hole; A rotating shaft, which passes through the center of the base and is rotatably connected to the base; A rotating disk is sleeved on a rotating shaft and located on one side of the base, and is configured to rotate in conjunction with the rotating shaft; Multiple carrier components, each carrier component including a connected connecting rod and a target disk, are arranged at intervals along the circumference of the rotating disk. Each connecting rod is fixedly connected to the rotating disk. The light detection through hole is located between two adjacent carrier components in the carrier component array.

5. The ion implantation method according to claim 1, characterized in that, The step of adjusting the cone angle of the target disk in response to an adjustment signal corresponding to the target cone angle, and performing ion implantation on the wafer placed on the target disk, includes: When the target disk has the target cone angle, the implantation angle during the ion implantation process is changed, and a set of electrical parameter information corresponding to each ion implantation process is obtained. Based on electrical parameter information, target group parameter information is selected from multiple sets of electrical parameter information, and the ion implantation parameters corresponding to the ion implantation treatment of the target group parameter information are used as the actual implantation parameters. A processing signal corresponding to the actual implantation parameters is generated, and the processing signal is used to control the ion implanter to perform ion implantation on the wafer according to the actual implantation parameters.

6. The ion implantation method according to claim 1, characterized in that, Before obtaining the corresponding resistance information, for any ion implantation process of the wafer, the method further includes: performing an annealing process on the ion-implanted wafer.

7. A manufacturing apparatus, characterized in that, include: An ion implantation apparatus includes a target disk for supporting a wafer, configured to perform multiple ion implantation processes on the wafer; wherein the process parameters corresponding to each ion implantation process are consistent, but the cone angle of the target disk is different when the wafer is placed on the target disk; and, when the target disk has a target cone angle, the wafer placed on the target disk is subjected to ion implantation. The control unit is configured to acquire multiple sets of resistance information corresponding to the wafer after the ion implantation machine performs multiple ion implantation processes on the wafer; wherein, one set of resistance information corresponds to one ion implantation process of the wafer; and to select target set of resistance information from the multiple sets of resistance information, and take the cone angle corresponding to the target set of resistance information as the target cone angle of the target disk, and to generate an adjustment signal corresponding to the target cone angle, the adjustment signal being used to control the adjustment of the cone angle of the corresponding target disk.

8. A data processing device, characterized in that, The device includes a memory and a processor, wherein the memory is adapted to store one or more computer instructions, and the processor, when executing the computer instructions, performs the ion implantation method according to any one of claims 1 to 6.

9. A computer-readable storage medium, characterized in that, The device stores computer instructions that, when executed, perform the ion implantation method according to any one of claims 1 to 6.

10. A computer program product, characterized in that, Includes computer instructions, which, when executed by a processor, implement the ion implantation method according to any one of claims 1 to 6.

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