On-chip S parameter measurement method and device, medium and equipment

Abstract

The invention provides an on-chip S parameter measurement method and device, a medium and equipment, and relates to the technical field of S parameter calibration, and the method comprises the steps: based on the incidence relation of a T parameter and an S parameter, a first length of an on-chip straight-through calibration part, and a second length of an on-chip transmission line calibration part, obtaining a T parameter and an S parameter; performing matrix operation on the first transmission matrix of the on-chip straight-through calibration piece and the second transmission matrix of the on-chip transmission line calibration piece to obtain a first conversion relational expression of the tested piece; determining a second conversion relational expression of the measured piece according to the symmetry between the measured value and the true value of the reflection calibration piece at the first port and the second port and the symmetry between the measured value and the true value of the reflection calibration piece and the reflection calibration piece; and measuring the transmission matrix of the measured piece by using an uncalibrated on-chip S parameter measurement system, and converting the transmission matrix based on the first conversion relational expression, the second conversion relational expression and the incidence relation to obtain the on-chip S parameter of the measured piece. According to the invention, the on-chip S parameter of the measured piece can be accurately measured without eight error models.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of S parameter calibration, in particular to a method, device and equipment for on-wafer S parameter measurement. BACKGROUND

[0002] Before testing, the on-wafer S parameter measurement system in the microelectronics industry needs to be calibrated by selecting a suitable calibration method. The calibration method mainly includes SOLT (short circuit-open circuit-load-through), SOLR (short circuit-open circuit-load-reciprocity), LRM (transmission line-reflection-load), LRRM (transmission line-reflection-reflection-load), etc. Each calibration method has corresponding characteristics.

[0003] The calibration method includes a calibration algorithm and a corresponding on-wafer calibration piece. Generally, an eight-item error model is used to characterize the non-idealities of system source / load matching, reflection / transmission tracking, and directivity, respectively. It is widely used in the field of on-wafer measurement.

[0004] However, since different calibration methods have different requirements for the definition of on-wafer calibration pieces, the non-ideality of the on-wafer calibration piece will cause differences in the accuracy of the calibration results. SUMMARY

[0005] The embodiments of the present application provide a method, device and equipment for on-wafer S parameter measurement to solve the problem that the non-ideality of the calibration piece in the existing calibration method of on-wafer S parameter will cause the calibration result to be not accurate enough.

[0006] In a first aspect, the embodiments of the present application provide a method for on-wafer S parameter measurement, comprising:

[0007] Based on the correlation between T parameters and S parameters, the first length of the on-wafer through calibration piece and the second length of the on-wafer transmission line calibration piece, the first transmission matrix of the on-wafer through calibration piece and the second transmission matrix of the on-wafer transmission line calibration piece are subjected to matrix operation to obtain a first conversion relationship of the measured piece; wherein the first transmission matrix is obtained by measuring the on-wafer through calibration piece using an uncalibrated on-wafer S parameter measurement system; the second transmission matrix is obtained by measuring the on-wafer transmission line calibration piece using the uncalibrated on-wafer S parameter measurement system;

[0008] According to the relationship between the measured value and the true value of the reflection calibration piece at the first port, the relationship between the measured value and the true value of the reflection calibration piece at the second port and the symmetry of the reflection calibration piece, a second conversion relationship of the measured piece is determined;

[0009] The transmission matrix of the measured piece is measured using the uncalibrated on-wafer S parameter measurement system, and the transmission matrix is converted based on the first conversion relationship, the second conversion relationship and the correlation to obtain the on-wafer S parameter of the measured piece.

[0010] In a second aspect, an embodiment of the present application provides an on-wafer S parameter measurement device, comprising:

[0011] The computing module is configured to perform matrix operation on the first transmission matrix of the on-wafer straight-through calibration piece and the second transmission matrix of the on-wafer transmission line calibration piece based on the correlation between the T parameter and the S parameter, the first length of the on-wafer straight-through calibration piece, and the second length of the on-wafer transmission line calibration piece, to obtain a first conversion relationship of the measured piece; wherein the first transmission matrix is obtained by measuring the on-wafer straight-through calibration piece by using the uncalibrated on-wafer S parameter measurement system; and the second transmission matrix is obtained by measuring the on-wafer transmission line calibration piece by using the uncalibrated on-wafer S parameter measurement system.

[0012] The computing module is configured to determine a second conversion relationship of the measured piece according to the correlation between the measured value and the true value of the first port of the reflection calibration piece, the correlation between the measured value and the true value of the second port, and the symmetry of the reflection calibration piece.

[0013] The conversion module is configured to measure the transmission matrix of the measured piece by using the uncalibrated on-wafer S parameter measurement system, and convert the transmission matrix based on the first conversion relationship, the second conversion relationship, and the correlation, to obtain the on-wafer S parameter of the measured piece.

[0014] In a third aspect, an embodiment of the present application provides an electronic device, comprising a memory and a processor, wherein the memory stores a computer program, and the processor implements the method in the first aspect or any possible implementation manner of the first aspect when executing the computer program.

[0015] In a fourth aspect, an embodiment of the present application provides a computer readable storage medium, which stores a computer program, and the computer program is executed by a processor to implement the method in the first aspect or any possible implementation manner of the first aspect.

[0016] In the embodiment of the present application, the first conversion relationship of the measured piece is obtained by performing matrix operation based on the correlation between the T parameter and the S parameter, the first length of the on-wafer straight-through calibration piece and the first transmission matrix, and the second length of the on-wafer transmission line calibration piece and the second transmission matrix, the second conversion relationship of the measured piece is determined according to the correlation between the measured value and the true value of the first port and the second port of the reflection calibration piece and the symmetry of the reflection calibration piece, and the on-wafer S parameter of the measured piece is obtained by converting the transmission matrix of the measured piece measured by the uncalibrated on-wafer S parameter measurement system based on the first conversion relationship and the second conversion relationship, so that the on-wafer S parameter of the measured piece can be obtained without using the eight-error model, the requirement for the on-wafer calibration piece is lower, and the S parameter of the measured piece can be accurately measured. BRIEF DESCRIPTION OF DRAWINGS

[0017] Figure 1 is an implementation flowchart of the on-wafer S parameter measurement method provided by the embodiment of the present application;

[0018] Figure 2 is a cascade relationship between the first error network and the second error network of the on-wafer S parameter measurement method, the on-wafer through calibration piece, the on-wafer transmission line calibration piece and the measured piece provided by the embodiment of the present application;

[0019] Figure 3 is an implementation flowchart of the step S110 of the on-wafer S parameter measurement method provided by the embodiment of the present application;

[0020] Figure 4 is a connection relationship between the first error network and the second error network of the on-wafer S parameter measurement method and the reflection calibration piece provided by the embodiment of the present application;

[0021] Figure 5a is a magnitude measurement result of S 11 when the on-wafer S parameters of the same 10dB attenuator in the 1GHz-67GHz frequency band are measured by the method provided by the present application and the commercial method;

[0022] Figure 5b is a magnitude measurement result of S 12 when the on-wafer S parameters of the same 10dB attenuator in the 1GHz-67GHz frequency band are measured by the method provided by the present application and the commercial method;

[0023] Figure 5c is a magnitude measurement result of S 21 when the on-wafer S parameters of the same 10dB attenuator in the 1GHz-67GHz frequency band are measured by the method provided by the present application and the commercial method;

[0024] Figure 5d is a magnitude measurement result of S 22 when the on-wafer S parameters of the same 10dB attenuator in the 1GHz-67GHz frequency band are measured by the method provided by the present application and the commercial method;

[0025] Figure 6a is a phase measurement result of S 11 when the on-wafer S parameters of the same 10dB attenuator in the 1GHz-67GHz frequency band are measured by the method provided by the present application and the commercial method;

[0026] Figure 6bis the in-situ S parameter measurement method provided by the embodiment of the application, the phase measurement result of S 12 of the in-situ S parameter measurement method provided by the embodiment of the application;

[0027] Figure 6c is the in-situ S parameter measurement method provided by the embodiment of the application, the phase measurement result of S 21 of the in-situ S parameter measurement method provided by the embodiment of the application;

[0028] Figure 6d is the in-situ S parameter measurement method provided by the embodiment of the application, the phase measurement result of S 22 of the in-situ S parameter measurement method provided by the embodiment of the application;

[0029] Figure 7 is a structural schematic diagram of the in-situ S parameter measurement device provided by the embodiment of the application;

[0030] Figure 8 is a schematic diagram of the electronic device provided by the embodiment of the application. DETAILED DESCRIPTION

[0031] The embodiments of the application will be described in detail below with reference to the accompanying drawings.

[0032] Referring to Figure 1 , it shows the implementation flowchart of the in-situ S parameter measurement method provided by the embodiment of the application, which is described in detail as follows:

[0033] In step S110, based on the correlation between the T parameter and the S parameter, the first length of the in-situ straight-through calibration piece and the second length of the in-situ transmission line calibration piece, the first transmission matrix of the in-situ straight-through calibration piece and the second transmission matrix of the in-situ transmission line calibration piece are subjected to matrix operation to obtain the first conversion relationship of the measured piece; wherein the first transmission matrix is obtained by measuring the in-situ straight-through calibration piece by using the uncalibrated in-situ S parameter measurement system; the second transmission matrix is obtained by measuring the in-situ transmission line calibration piece by using the uncalibrated in-situ S parameter measurement system.

[0034] In some embodiments, the T parameter is also called transmission parameter, and the S parameter is also called scattering parameter. The T parameter and the S parameter are important parameters for describing the port characteristics of a microwave network, and are used to characterize the transmission, reflection and other behaviors of signals in the network. The T parameter includes T 11 , T 12 , T 21 , T 22 , and T 11is the reverse voltage transmission coefficient when the output port is matched to a load, T 12 is the reverse transfer impedance when the output port is matched to a load, T 21 is the forward transfer admittance when the output port is matched to a load, T 22 is the forward voltage transmission coefficient when the output port is matched to a load. The S parameters include S 11 , S 12 , S 21 , S 22 , S 11 is the reflection coefficient of port 1 when port 2 is matched to a load, S 21 is the transmission coefficient of signal from port 1 to port 2 when port 2 is matched to a load, S 12 is the transmission coefficient of signal from port 2 to port 1 when port 1 is matched to a load, S 22 is the reflection coefficient of port 2 when port 1 is matched to a load. The relationship between the T parameters and the S parameters is:

[0035]

[0036] In some embodiments, the on-wafer through calibration standard is one of the most basic calibration standards in on-wafer calibration, which is usually a very short transmission line with a system reference impedance, used to connect two test ports, and the design purpose is to simulate an ideal through state, eliminate the inherent delay, mismatch and connection error between the two ports in the test system, and ensure that the real characteristics of the measured device can be accurately separated in subsequent calibration. The on-wafer transmission line calibration standard is a standard transmission line with known characteristic impedance, length and loss parameters, which is used to calibrate the transmission characteristics of the system, including attenuation, phase delay, etc.

[0037] Referring to Figure 2 , when the on-wafer through calibration standard and the on-wafer transmission line calibration standard are tested, the on-wafer through calibration standard and the on-wafer transmission line calibration standard are located between the first error network and the second error network, and the first transmission matrix of the on-wafer through calibration standard and the second transmission matrix of the on-wafer transmission line calibration standard can be directly obtained by measurement. The first length of the on-wafer through calibration standard and the second length of the on-wafer transmission line calibration standard can be directly obtained by measurement.

[0038] Referring to Figure 3 , the specific processing mode of the above step S110 includes steps S1101-S1107, and the specific content is as follows:

[0039] Step S1101, based on the definition of T parameters, the first T parameter definition formula of the on-wafer through calibration standard and the second T parameter definition formula of the on-wafer transmission line calibration standard are determined.

[0040] In some embodiments, the first T parameter definition formula is:

[0041]

[0042] wherein T1 is a T parameter of the on-wafer through calibration element, l1 is a first length of the on-wafer through calibration element, and γ is a propagation constant of the transmission line.

[0043] The second T parameter definition formula is:

[0044]

[0045] wherein T2 is a T parameter of the on-wafer transmission line calibration element, l2 is a first length of the on-wafer transmission line calibration element, and γ is a propagation constant of the transmission line.

[0046] In step S1102, a first relationship formula between the first transmission matrix and the first T parameter definition formula and a second relationship formula between the second transmission matrix and the second T parameter definition formula are determined according to a measurement mode of the on-wafer S parameter measurement system.

[0047] In some embodiments, according to the connection relationship in Figure 2 , the measurement mode of the on-wafer S parameter measurement system can be obtained.

[0048] In a possible implementation, the specific processing manner of step S1102 is as follows: according to the measurement mode of the on-wafer S parameter measurement system, a cascade relationship between the on-wafer through calibration element and the on-wafer transmission line calibration element and first and second error networks of the uncalibrated on-wafer S parameter measurement system is determined; based on the cascade relationship between the on-wafer through calibration element and the first and second error networks, the first relationship formula between the first transmission matrix and the first T parameter definition formula is determined; and based on the cascade relationship between the on-wafer transmission line calibration element and the first and second error networks, the second relationship formula between the second transmission matrix and the second T parameter definition formula is determined.

[0049] In some embodiments, referring to Figure 2 , it can be obtained that the first error network is on the left side of the on-wafer through calibration element or the on-wafer transmission line calibration element, and the second error network is on the right side of the on-wafer through calibration element or the on-wafer transmission line calibration element, and therefore, the cascade relationship between the on-wafer through calibration element or the on-wafer transmission line calibration element and the first and second error networks is: first error network-on-wafer through calibration element / on-wafer transmission line calibration element-second error network. Therefore, the first relationship formula between the first transmission matrix and the first T parameter definition formula is:

[0050]

[0051] wherein M1 is the first transmission matrix, X is the first error network, and Y is the second error network.

[0052] The second relationship formula between the second transmission matrix and the second T parameter definition formula is:

[0053]

[0054] wherein M2 is a second transfer matrix, X is an error network X, and Y is an error network Y.

[0055] In step S1103, the first T parameter definition formula and the second T parameter definition formula are subjected to matrix operation to determine a first correlation between the first T parameter definition formula, the second T parameter definition formula, the first transfer matrix, and the second transfer matrix.

[0056] In some embodiments, according to the first correlation, the following can be obtained: According to the second correlation, the following can be obtained: Multiplying the two formulas, the first correlation between the first T parameter definition formula, the second T parameter definition formula, the first transfer matrix, and the second transfer matrix can be obtained as follows:

[0057] In step S1104, the propagation constant of the on-wafer transmission line calibration piece is calculated based on the first correlation.

[0058] In some embodiments, according to the first correlation, the following can be obtained: and are similar matrices.

[0059] In a possible implementation, the specific processing manner of step S1104 is as follows: the second transfer matrix and the inverse matrix of the first transfer matrix are multiplied, and the first eigenvalue and the second eigenvalue of the matrix obtained after the multiplication are calculated; based on the first correlation, the first eigenvalue, the second eigenvalue, and the difference between the second length and the first length, the propagation constant of the on-wafer transmission line calibration piece in the on-wafer S parameter measurement system is calculated.

[0060] In some embodiments, according to the first correlation, in order to facilitate calculation, the following can be obtained: Let Then the first correlation can be expressed as: P = X -1 QX. The matrix Q obtained after the multiplication of the second transfer matrix and the inverse matrix of the first transfer matrix can be directly calculated, since the second transfer matrix and the first transfer matrix are known quantities measured. Since the matrix P and the matrix Q are similar matrices, the eigenvalues of the similar matrices are equal, i.e., eig(P) = eig(Q) = λ i . Wherein eig is an eigenvalue operation, λ i is an eigenvalue, since the matrix P and the matrix Q are both second-order matrices, there are two eigenvalues, i.e., i = 1, 2.

[0061] It should be noted that since P is a diagonal matrix, the eigenvalues of matrix P are the elements on the diagonal line thereof, and the propagation constant can be calculated according to matrix P and the eigenvalues as follows:

[0062]

[0063] wherein γ i is the propagation constant of the forward and backward propagation.

[0064] In step S1105, the first T parameter is obtained by substituting the propagation constant and the first length into the first T parameter definition formula, and the second T parameter is obtained by substituting the propagation constant and the second length into the second T parameter definition formula.

[0065] In some embodiments, since only the first length and the propagation constant are unknown in the first T parameter definition formula, the first length is measured, the propagation constant is calculated, and then the first length and the propagation constant are substituted into the first T parameter definition formula to calculate the first T parameter. Since only the second length and the propagation constant are unknown in the second T parameter definition formula, the second length is measured, the propagation constant is calculated, and then the second length and the propagation constant are substituted into the second T parameter definition formula to calculate the second T parameter.

[0066] In step S1106, the first eigenvector and the second eigenvector are determined according to the propagation constant and the characteristics of the propagation constant.

[0067] In some embodiments, the first calculation formula and the second calculation formula can be obtained after the two eigenvalues of matrix P and matrix Q are combined to form a diagonal matrix, the first calculation formula is as follows:

[0068] diag(λ i )=A -1 PA,i=1,2

[0069] The second calculation formula is as follows:

[0070] diag(λ i )=B -1 PB,i=1,2

[0071] wherein A is the eigenvector of matrix P, that is, the first eigenvector, and B is the eigenvector of matrix Q, that is, the second eigenvector.

[0072] It should be noted that if a i and d i are also the eigenvectors of matrix P and matrix Q, and λ i are the corresponding eigenvalues, then any multiple of and Ψ are also the eigenvectors of matrix P and matrix Q, and the first eigenvector can be expressed as: The second eigenvector can be expressed as: B = [Ψ1b 01 Ψ2b 02 .

[0073] Simplifying the first eigenvector, we can obtain:

[0074]

[0075] Simplifying the second eigenvector, we can obtain:

[0076] B = B0Ψ, Ψ = diag(Ψ i ), i = 1, 2

[0077] Wherein, A0 and B0 are obtained from the eigenvalue decomposition of the first calculation formula and the second calculation formula.

[0078] Step S1107, based on the correlation between the T parameter and the S parameter, the first correlation, the first eigenvector and the second eigenvector, the first transfer matrix and the second transfer matrix are subjected to matrix operation, and the first conversion relationship is obtained.

[0079] In some embodiments, according to the first calculation formula and the second calculation formula, we can obtain: O = (BA -1 ) -1 QBA -1 , combined with the first correlation, we can obtain: X = BA -1 , after substituting the simplified first eigenvector and the second eigenvector, we can obtain: X = B0KA0 -1 , Wherein,

[0080] When A0 is the unit matrix, from X = B0kA0 -1 we can obtain X = B0K, let X0 = B0, then X = X0K. From the first relationship, we can obtain Substitute X = X0K, we can obtain Let , Substitute , we can obtain and Wherein, X0 and Y0 are known quantities, which can be obtained by calculation or measurement.

[0081] It should be noted that when measuring the measured piece, referring to Figure 2 The measured piece is located between the first error network and the second error network, so we can obtain:

[0082]

[0083] Wherein, T DUT is the T parameter of the measured piece, M DUT is the transmission matrix of the measured piece.

[0084] Substitute X=X0K and , we can get Let , we can get T DUT =K -1 T DUT0 K.

[0085] Substitute into T DUT =K -1 T DUT0 K, we can get:

[0086]

[0087] Therefore, Combined with the correlation between the T parameter and the S parameter, the first correlation formula can be obtained:

[0088]

[0089] Wherein, S DUT is the S parameter of the measured piece.

[0090] In step S120, the second conversion relationship of the measured piece is determined according to the relationship between the measured value and the true value of the reflection calibration piece at the first port, the relationship between the measured value and the true value of the reflection calibration piece at the second port, and the symmetry of the reflection calibration piece.

[0091] In some embodiments, referring to Figure 4 , the connection mode of the reflection calibration piece is shown in the figure, the measured value of the reflection calibration piece at the first port refers to the value of the reflection calibration piece measured by the uncalibrated S parameter measurement system, and the measured value of the reflection calibration piece at the second port refers to the value of the reflection calibration piece measured by the uncalibrated S parameter measurement system. The true value of the reflection calibration piece refers to the actual value of the reflection calibration piece. Since the reflection calibration piece has symmetry, the true value of the reflection calibration piece at the first port is equal to the true value of the reflection calibration piece at the second port.

[0092] In a possible implementation, the specific processing manner of step S120 is: determining a relationship between the measured value and the true value of the reflector at the first port, and a relationship between the measured value and the true value of the reflector at the second port according to the connection relationship between the reflector and the first error network and the second error network in the sheet S parameter measurement system; performing matrix operation on the relationship between the measured value and the true value of the reflector at the first port to obtain a third relationship; performing matrix operation on the relationship between the measured value and the true value of the reflector at the second port to obtain a fourth relationship; and performing matrix operation on the third relationship and the fourth relationship based on the symmetry of the reflector to obtain the second conversion relationship of the measured object.

[0093] In some embodiments, referring to Figure 4 The connection relationship between the reflector and the first error network and the connection relationship between the reflector and the second error network can be obtained. According to the connection relationship between the reflector and the first error network, a relationship between the measured value and the true value of the reflector at the first port (port 1) can be obtained, and a relationship between the measured value and the true value of the reflector at the second port (port 2) can be obtained. The relationship between the measured value and the true value of the reflector at the first port is:

[0094] Γ1=(X 11 Γ+X 12 )(X 21 Γ+X 22 ) -1

[0095] wherein Γ1 is the measured value of the reflector at the first port, Γ is the true value of the reflector at the first port, X 11 is the value of the first row and the first column in the matrix X, X 12 is the value of the first row and the second column in the matrix X, X 21 is the value of the second row and the first column in the matrix X, and X 22 is the value of the second row and the second column in the matrix X.

[0096] The relationship between the measured value and the true value of the reflector at the second port is:

[0097] Γ2=(Y 11 Γ+Y 12 )(Y 21 Γ+Y 22 ) -1

[0098] wherein Γ1 is the measured value of the reflector at the second port, Γ is the true value of the reflector at the second port, Y 11 is the value of the first row and the first column in the matrix Y, Y 12is the value of the second column of the first row in matrix Y, Y 21 is the value of the first column of the second row in matrix Y, Y 22 is the value of the second column of the second row in matrix Y.

[0099] It should be noted that, according to and can be obtained, and Substituting the two formulas into the relationship between the measured value and the true value of the reflection artifact at the first port and the second port, the following can be obtained:

[0100]

[0101]

[0102] Let Γ 10 = (X 011 - Γ1X 021 ) -1 (Γ1X 022 - X 012 ), Γ 20 = (Y 011 - Γ2Y 021 ) -1 (Γ2Y 022 - Y 012 ), since the reflection artifact has symmetry, the true value of the first port and the true value of the second port of the reflection artifact are equal, and thus the formulas of the two true values can be equal, that is, At this time, Let then Γ 20 = LΓ 10 L, that is,

[0103] From the above formula, it can be obtained that Let α = ± 1. At this time, L = αL0. Since then k2 = αL0k1 can be obtained, at this time, from can be obtained

[0104] Substituting into T DUT = K -1 T DUT0 K, the following can be obtained:

[0105]

[0106] Therefore, Combining the correlation between the T parameter and the S parameter, the first correlation formula can be obtained:

[0107] In a possible implementation, the specific processing manner of step S120 further includes: the second conversion relationship includes a reflection coefficient of the reflection calibration piece; if the reflection calibration piece is an open circuit calibration piece and an absolute value of a reflection phase of the reflection calibration piece is less than or equal to a first preset value, the reflection coefficient is 1; if the reflection calibration piece is the open circuit calibration piece and the absolute value of the reflection phase of the reflection calibration piece is greater than the first preset value, the reflection coefficient is -1; if the reflection calibration piece is a short circuit calibration piece and the absolute value of the reflection phase of the reflection calibration piece is between a first preset value and a second preset value, the reflection coefficient is 1; if the reflection calibration piece is the short circuit calibration piece and the absolute value of the reflection phase of the reflection calibration piece is not between the first preset value and the second preset value, the reflection coefficient is -1.

[0108] In some embodiments, the reflection calibration piece can be an open circuit calibration piece or a short circuit calibration piece, the first preset value is 90°, and the second preset value is 180°.

[0109] Step S130: measuring a transmission matrix of the measured piece by using the uncalibrated on-wafer S parameter measurement system, and converting the transmission matrix based on the first conversion relationship, the second conversion relationship and the correlation between the T parameter and the S parameter to obtain the on-wafer S parameter of the measured piece.

[0110] In some embodiments, after the transmission matrix of the measured piece is measured, the T parameter of the measured piece is determined according to the cascade relationship between the measured piece and the first error network and the second error network, the initial S parameter of the measured piece is determined according to the correlation between the T parameter and the S parameter, and the on-wafer S parameter of the measured piece is obtained by converting the initial S parameter of the measured piece according to the first conversion relationship and the second conversion relationship.

[0111] In a possible implementation, the specific processing manner of step S130 is: converting the transmission matrix of the measured piece into the initial T parameter of the measured piece based on the cascade relationship between the measured piece and the first error network and the second error network of the uncalibrated on-wafer S parameter measurement system; converting the initial T parameter to obtain the initial S parameter of the measured piece according to the correlation between the T parameter and the S parameter; and converting the initial S parameter of the measured piece based on the first conversion relationship and the second conversion relationship to obtain the on-wafer S parameter of the measured piece.

[0112] In some embodiments, referring to Figure 2 , the initial S parameter of the measured piece can be obtained according to the cascade relationship between the measured piece and the first error network and the second error network. Substituting X=X0K and Y=Y0K into the above equation, the initial S parameter of the measured piece can be obtained. At this time, Since X0 and Y0 are known quantities, T DUT0 ​Also for known quantity, according to T DUT0 , T parameters and S parameters, the association can calculate the initial S parameter S DUT0 .

[0113] According to the first conversion relationship, the measured piece of S parameters and initial S parameters in the first row of the second column, the first column of the second row of the same value, thus can obtain the measured piece of S parameters in the S 12 and S 21 .

[0114] According to the second conversion relationship, the measured piece of S parameters in the first row of the first column is the product of the initial S parameters in the first row of the first column and alpha, the measured piece of S parameters in the second row of the second column is the product of the initial S parameters in the second row of the second column and alpha, thus can obtain the measured piece of S parameters in the S 11 and S 22 . The measured piece of S 11 , S 12 , S 21 , S 22 together constitute the measured piece of S parameters in the wafer.

[0115] Referring to Figure 5a , Figure 5b , Figure 5c , Figure 5d , Figure 6a , Figure 6b , Figure 6c and Figure 6d It can be seen that in the 1GHz-67GHz frequency band, the transmission amplitude maximum deviation is 0.03dB, the transmission amplitude maximum deviation is 0.003, the transmission phase maximum deviation is 0.2°, the reflection phase maximum deviation is 0.3°, that is, the method provided by the application can realize the accurate measurement of the wafer S parameters, and can meet the measurement requirements.

[0116] Through the association between T parameters and S parameters, combined with the first length and the first transmission matrix of the wafer straight-through calibration piece, the second length and the second transmission matrix of the wafer transmission line calibration piece, the matrix operation is carried out, the first conversion relationship of the measured piece is obtained, the relationship between the measured value and the true value of the reflection calibration piece at the first port and the second port and the symmetry of the reflection calibration piece, combined with the characteristics of the short circuit calibration piece and the open circuit calibration piece, the second conversion relationship of the measured piece is determined, the transmission matrix of the measured piece measured by the uncalibrated wafer S parameter measurement system is converted through the first conversion relationship, the S 12 and S 21, the transmission matrix of the measured object measured by the uncalibrated on-wafer S parameter measurement system is converted by a second conversion relationship to obtain S 11 and S 22 , S 11 , S 12 , S 21 , S 22 together constitute the on-wafer S parameters of the measured object. The measurement method provided in the application can obtain the on-wafer S parameters of the measured object with accuracy meeting the application requirements without using the eight error models.

[0117] It should be understood that the size of the serial number of each step in the above embodiment does not mean the order of execution, and the execution order of each process should be determined according to its function and inherent logic, and should not constitute any limitation on the implementation process of the embodiment of the application.

[0118] The following is the device embodiment of the application, and for the details not described in detail, reference can be made to the corresponding method embodiments described above.

[0119] Figure 7 The structure of the on-wafer S parameter measurement device provided in the embodiment of the application is shown, only the parts related to the embodiment of the application are shown for the convenience of description, and the details are as follows:

[0120] As shown in Figure 7 , the on-wafer S parameter measurement device 7 comprises:

[0121] The calculation module 71 is configured to perform matrix operation on the first transmission matrix of the on-wafer straight-through calibration object and the second transmission matrix of the on-wafer transmission line calibration object based on the correlation between the T parameters and the S parameters, the first length of the on-wafer straight-through calibration object and the second length of the on-wafer transmission line calibration object, to obtain a first conversion relationship of the measured object; wherein the first transmission matrix is obtained by measuring the on-wafer straight-through calibration object by the uncalibrated on-wafer S parameter measurement system; the second transmission matrix is obtained by measuring the on-wafer transmission line calibration object by the uncalibrated on-wafer S parameter measurement system;

[0122] The calculation module 71 is configured to determine the second conversion relationship of the measured object according to the relationship between the measured value and the true value of the first port of the reflection calibration object, the relationship between the measured value and the true value of the second port and the symmetry of the reflection calibration object;

[0123] The conversion module 72 is configured to measure the transmission matrix of the measured object by the uncalibrated on-wafer S parameter measurement system, and convert the transmission matrix based on the first conversion relationship, the second conversion relationship, the correlation between the T parameters and the S parameters, to obtain the on-wafer S parameters of the measured object.

[0124] In a possible implementation, the calculating module 71 specifically comprises: determining a first T parameter definition formula of the on-wafer through calibration piece and a second T parameter definition formula of the on-wafer transmission line calibration piece based on the definition of the T parameter; determining a first relationship formula between the first transmission matrix and the first T parameter definition formula and a second relationship formula between the second transmission matrix and the second T parameter definition formula according to the measurement mode of the on-wafer S parameter measurement system; performing matrix operation on the first relationship formula and the second relationship formula to determine a first correlation relationship between the first T parameter definition formula, the second T parameter definition formula and the first transmission matrix and the second transmission matrix; calculating the propagation constant of the on-wafer transmission line calibration piece based on the first correlation relationship; obtaining the first T parameter by substituting the propagation constant and the first length into the first T parameter definition formula and obtaining the second T parameter by substituting the propagation constant and the second length into the second T parameter definition formula; determining a first eigenvector and a second eigenvector according to the propagation constant and the characteristics of the propagation constant; and performing matrix operation on the first transmission matrix and the second transmission matrix based on the correlation relationship between the T parameter and the S parameter, the first correlation relationship, the first eigenvector and the second eigenvector to obtain the first conversion relationship formula.

[0125] In a possible implementation, the calculating module 71 further comprises: performing point multiplication on the second transmission matrix and the inverse matrix of the first transmission matrix, and calculating the first eigenvalue and the second eigenvalue of the matrix obtained after the point multiplication; and calculating the propagation constant of the on-wafer transmission line calibration piece in the on-wafer S parameter measurement system based on the first correlation relationship, the first eigenvalue, the second eigenvalue and the difference between the second length and the first length.

[0126] In a possible implementation, the calculating module 71 further comprises: determining the cascade relationship between the on-wafer through calibration piece and the on-wafer transmission line calibration piece and the first error network and the second error network of the uncalibrated on-wafer S parameter measurement system according to the measurement mode of the on-wafer S parameter measurement system; determining the first relationship formula between the first transmission matrix and the first T parameter definition formula based on the cascade relationship between the on-wafer through calibration piece and the first error network and the second error network; and determining the second relationship formula between the second transmission matrix and the second T parameter definition formula based on the cascade relationship between the on-wafer transmission line calibration piece and the first error network and the second error network.

[0127] In a possible implementation, the calculating module 71 further comprises: determining, according to the connection relationship between the reflection calibration piece and the first error network and the second error network in the on-wafer S parameter measurement system, a relationship between a measured value and an actual value of the reflection calibration piece at the first port, a relationship between a measured value and an actual value of the reflection calibration piece at the second port; performing matrix operation on the relationship between the measured value and the actual value of the reflection calibration piece at the first port to obtain a third relationship; performing matrix operation on the relationship between the measured value and the actual value of the reflection calibration piece at the second port to obtain a fourth relationship; and performing matrix operation on the third relationship and the fourth relationship based on the symmetry of the reflection calibration piece to obtain a second conversion relationship of the measured piece.

[0128] In a possible implementation, the calculating module 71 further comprises: the second conversion relationship comprises a reflection coefficient of the reflection calibration piece; if the reflection calibration piece is an open circuit calibration piece and an absolute value of a reflection phase of the reflection calibration piece is less than or equal to a first preset value, the reflection coefficient is 1; if the reflection calibration piece is the open circuit calibration piece and the absolute value of the reflection phase of the reflection calibration piece is greater than the first preset value, the reflection coefficient is -1; if the reflection calibration piece is a short circuit calibration piece and the absolute value of the reflection phase of the reflection calibration piece is between a first preset value and a second preset value, the reflection coefficient is 1; the second conversion relationship comprises the reflection coefficient of the reflection calibration piece; if the reflection calibration piece is the short circuit calibration piece and the absolute value of the reflection phase of the reflection calibration piece is not between the first preset value and the second preset value, the reflection coefficient is -1.

[0129] In a possible implementation, the converting module 72 specifically comprises: converting, based on the cascade relationship between the measured piece and the uncalibrated first error network and the second error network of the on-wafer S parameter measurement system, a transmission matrix of the measured piece into an initial T parameter of the measured piece; converting, according to the correlation between the T parameter and the S parameter, the initial T parameter to obtain an initial S parameter of the measured piece; and converting, based on the first conversion relationship and the second conversion relationship, the initial S parameter of the measured piece to obtain an on-wafer S parameter of the measured piece.

[0130] Figure 8 is a schematic diagram of an electronic device provided by an embodiment of the present application. As shown in Figure 8 the electronic device 8 of this embodiment comprises a processor 80 and a memory 81. The memory 81 stores a computer program 82. The processor 80 implements the steps in each of the method embodiments described above when executing the computer program 82. Alternatively, the processor 80 implements the functions of each module / unit in each of the device embodiments described above when executing the computer program 82.

[0131] For example, the computer program 82 can be divided into one or more modules / units, which are stored in the memory 81 and executed by the processor 80 to complete the present application. The one or more modules / units can be a series of computer program instruction segments capable of completing a specific function, which are used to describe the execution process of the computer program 82 in the electronic device 8.

[0132] The electronic device 8 can include, but is not limited to, the processor 80, the memory 81. Those skilled in the art can understand that, Figure 8 The electronic device 8 is only an example and does not constitute a limitation on the electronic device 8, and can include more or fewer components than the illustration, or combine certain components, or different components, for example, the electronic device 8 can also include an input / output device, a network access device, a bus, etc.

[0133] For the convenience and brevity of description, only the above-mentioned division of each functional module / unit is exemplified, and in actual application, the above-mentioned functions can be completed by different functional modules / units according to needs. The above-mentioned modules / units can be realized in the form of hardware, software, or a combination of hardware and software.

[0134] The embodiment of the present application also provides a computer readable storage medium, which stores a computer program. When the computer program is executed by a processor, the method in each method embodiment described above is realized.

[0135] In the above embodiments, the description of each embodiment has its own emphasis, and the parts not described or recorded in a certain embodiment can be referred to the related description of other embodiments. If there is no special description and logical conflict, the terms and / or descriptions of different embodiments are consistent and can be mutually referenced. The technical features in different embodiments can be combined to form new embodiments according to their inherent logical relationship.

[0136] The above-described embodiments are only used to illustrate the technical solutions of the present application, rather than limit them; although the present application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that: it can still modify the technical solutions recorded in the foregoing embodiments, or make equivalent replacement to part of the technical features; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the spirit and scope of the technical solutions of the embodiments of the present application, and should be included in the protection scope of the present application.

Claims

1. An on-chip S-parameter measurement method, characterized in that, include: Based on the correlation between T-parameters and S-parameters, the first length of the on-chip through-cathode calibration component, and the second length of the on-chip transmission line calibration component, matrix operations are performed on the first transmission matrix of the on-chip through-cathode calibration component and the second transmission matrix of the on-chip transmission line calibration component to obtain the first transformation formula of the device under test; wherein, the first transmission matrix is ​​obtained by measuring the on-chip through-cathode calibration component using an uncalibrated on-chip S-parameter measurement system; the second transmission matrix is ​​obtained by measuring the on-chip transmission line calibration component using an uncalibrated on-chip S-parameter measurement system. Based on the relationship between the measured value and the true value of the reflection calibrator at the first port, the relationship between the measured value and the true value at the second port, and the symmetry of the reflection calibrator, the second conversion relationship of the test piece is determined. The transmission matrix of the device under test (DUT) is measured using an uncalibrated on-chip S-parameter measurement system. Based on the first transformation formula, the second transformation formula, and the correlation between T-parameters and S-parameters, the transmission matrix is ​​transformed to obtain the on-chip S-parameters of the DUT.

2. The on-chip S-parameter measurement method according to claim 1, characterized in that, Based on the correlation between T-parameters and S-parameters, the first length of the on-chip through-cathode calibration component, and the second length of the on-chip transmission line calibration component, matrix operations are performed on the first transmission matrix of the on-chip through-cathode calibration component and the second transmission matrix of the on-chip transmission line calibration component to obtain the first transformation formula of the device under test, including: Based on the definition of T-parameters, the first T-parameter definition of the on-chip through-calibrator and the second T-parameter definition of the on-chip transmission line calibrator are determined. Based on the measurement method of the on-chip S-parameter measurement system, determine the first relationship between the first transmission matrix and the first T-parameter definition, and the second relationship between the second transmission matrix and the second T-parameter definition; Perform matrix operations on the first relation and the second relation to determine the first association relationship between the first T-parameter definition, the second T-parameter definition, the first transmission matrix, and the second transmission matrix. Based on the first correlation, the propagation constant of the on-chip transmission line calibrator is calculated; Substituting the propagation constant and the first length into the definition of the first T parameter, we obtain the first T parameter; substituting the propagation constant and the second length into the definition of the second T parameter, we obtain the second T parameter. Based on the propagation constant and its characteristics, determine the first eigenvector and the second eigenvector; Based on the correlation between T parameters and S parameters, the first correlation relationship, the first eigenvector and the second eigenvector, matrix operations are performed on the first transmission matrix and the second transmission matrix to obtain the first transformation relation.

3. The on-chip S-parameter measurement method according to claim 2, characterized in that, The calculation of the propagation constant of the on-chip transmission line calibrator based on the first correlation includes: After performing a dot product between the second transmission matrix and the inverse of the first transmission matrix, the first and second eigenvalues ​​of the resulting matrix are calculated. Based on the first correlation, the first feature value, the second feature value, and the difference between the second length and the first length, the propagation constant of the on-chip transmission line calibrator in the on-chip S-parameter measurement system is calculated.

4. The on-chip S-parameter measurement method according to claim 2, characterized in that, The step of determining the first relationship between the first transfer matrix and the first T-parameter definition, and the second relationship between the second transfer matrix and the second T-parameter definition, based on the measurement method of the on-chip S-parameter measurement system, includes: Based on the measurement method of the on-chip S-parameter measurement system, determine the cascading relationship between the on-chip through calibration device and the on-chip transmission line calibration device and the first and second error networks of the uncalibrated on-chip S-parameter measurement system; Based on the cascade relationship between the on-chip through calibration component and the first error network and the second error network, a first relationship between the first transmission matrix and the first T-parameter definition is determined. Based on the cascade relationship between the on-chip transmission line calibration device and the first and second error networks, a second relationship between the second transmission matrix and the second T-parameter definition is determined.

5. The on-chip S-parameter measurement method according to claim 1, characterized in that, The step of determining the second transformation formula of the device under test based on the relationship between the measured values ​​and the true values ​​of the reflection calibrator at the first and second ports and the symmetry of the reflection calibrator includes: Based on the connection relationship between the reflection calibrator and the first and second error networks in the on-chip S-parameter measurement system, the relationship between the measured value and the true value of the reflection calibrator at the first port and the relationship between the measured value and the true value of the reflection calibrator at the second port are determined. A matrix operation is performed on the relationship between the measured value and the true value of the reflection calibrator at the first port to obtain a third relationship. A matrix operation is performed on the relationship between the measured value and the true value of the reflection calibrator at the second port to obtain a fourth relationship. Based on the symmetry of the reflection calibration component, matrix operations are performed on the third and fourth relations to obtain the second transformation relation of the test component.

6. The on-chip S-parameter measurement method according to claim 5, characterized in that, The second conversion formula includes the reflection coefficient of the reflection calibrator; the method further includes: If the reflection calibration element is an open-circuit calibration element, and the absolute value of the reflection phase of the reflection calibration element is less than or equal to a first preset value, then the reflection coefficient is 1; If the reflection calibration element is an open-circuit calibration element, and the absolute value of the reflection phase of the reflection calibration element is greater than the first preset value, then the reflection coefficient is -1; If the reflection calibrator is a short-circuit calibrator, and the absolute value of the reflection phase of the reflection calibrator is between the first preset value and the second preset value, then the reflection coefficient is 1. If the reflection calibrator is a short-circuit calibrator, and the absolute value of the reflection phase of the reflection calibrator is not between the first preset value and the second preset value, then the reflection coefficient is -1.

7. The on-chip S-parameter measurement method according to claim 1, characterized in that, The transformation of the transfer matrix based on the first transformation relation, the second transformation relation, and the correlation between the T parameters and S parameters to obtain the on-chip S parameters of the device under test includes: Based on the cascade relationship between the device under test (DUT) and the first and second error networks of the uncalibrated on-chip S-parameter measurement system, the transfer matrix of the DUT is converted into the initial T-parameters of the DUT. Based on the correlation between the T-parameters and the S-parameters, the initial T-parameters are transformed to obtain the initial S-parameters of the test piece; The initial S-parameters of the test device are transformed based on the first and second transformation formulas to obtain the on-chip S-parameters of the test device.

8. An on-chip S-parameter measurement device, characterized in that, include: The calculation module is used to perform matrix operations on the first transmission matrix of the on-chip through-calibrator and the second transmission matrix of the on-chip transmission line calibrator based on the correlation between T-parameters and S-parameters, the first length of the on-chip through-calibrator, and the second length of the on-chip transmission line calibrator, to obtain a first transformation formula for the device under test; wherein, the first transmission matrix is ​​obtained by measuring the on-chip through-calibrator using an uncalibrated on-chip S-parameter measurement system; and the second transmission matrix is ​​obtained by measuring the on-chip transmission line calibrator using an uncalibrated on-chip S-parameter measurement system. The calculation module is used to determine the second conversion formula of the device under test based on the relationship between the measured value and the true value of the reflection calibrator at the first port, the relationship between the measured value and the true value at the second port, and the symmetry of the reflection calibrator. The conversion module is used to measure the transmission matrix of the device under test using an uncalibrated on-chip S-parameter measurement system, and to convert the transmission matrix based on the first conversion formula, the second conversion formula, and the correlation between the T-parameters and S-parameters to obtain the on-chip S-parameters of the device under test.

9. An electronic device, characterized in that, It includes a memory and a processor, the memory storing a computer program, and the processor executing the computer program to implement the method as described in any one of claims 1 to 7.

10. A computer-readable storage medium, characterized in that, The computer-readable storage medium stores a computer program that, when executed by a processor, implements the method as described in any one of claims 1 to 7.

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