Differential electrode Mach-Zehnder silicon-based electro-optical modulator based on frequency domain equalization technology
By employing frequency domain equalization techniques based on differential T-type electrodes and waveguide layers, along with a series PN junction and photoelectric reverse transmission structure, the bandwidth limitation problem of silicon-based electro-optic modulators was solved, enabling a modulator with high bandwidth and high speed, reducing capacitance, and improving signal integrity and high-frequency performance.
Patent Information
- Application Number
- CN202511470662.X
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-10-15
- Publication Date
- 2025-12-19
AI Technical Summary
The bandwidth of existing silicon-based MZM modulators is still limited. A key technical challenge is to provide a differential electrode Mach-Zehnder silicon-based electro-optic modulator based on frequency domain equalization technology, which can improve the bandwidth of the device.
The differential T-type electrode structure and waveguide layer design are adopted, including first and second modulator regions and equalizer region. By using a series PN junction and an equalizer structure that introduces photoelectric reverse transmission, the capacitance is reduced and the phase difference of high-frequency signals is compensated. The differential electrode structure is used to load high-speed electrical signals.
It achieves a high-bandwidth and high-speed modulator, reduces capacitance, improves signal integrity, is easy to integrate with drivers, and enhances high-frequency performance.
Smart Images
Figure CN121165366A_ABST
Abstract
Description
Technical Field
[0001] This invention relates to the fields of integrated silicon-based optoelectronic chips and optical communication technology, and in particular to a differential electrode Mach-Zehnder silicon-based electro-optic modulator based on frequency domain equalization technology. Background Technology
[0002] In today's digital age, cutting-edge technologies such as cloud computing, big data, and artificial intelligence are booming, driving exponential growth in global data volume and posing stringent challenges to the speed and capacity of communication links. Optical communication, with its significant advantages of high bandwidth, large capacity, low loss, low crosstalk, and low cost, has become a core technology for building high-speed data transmission networks and occupies a crucial position in the field of information and communication. In optical communication systems, silicon-based electro-optic modulators, as the core component for electro-optic information conversion, can modulate signals at high speed, converting electrical signals into optical signals. This enables high-speed, low-latency, and low-loss data transmission in optical fibers, significantly improving the efficiency and reliability of data transmission.
[0003] Silicon-based Mach-Zehnder electro-optic modulators (MZMs) are among the most widely used structures in silicon-based modulators, typically employing either a differential electrode structure based on GSGSG or a single-ended push-pull electrode structure based on GS electrodes. Differential electrodes are more favored in practical applications because the output of the driver usually uses a differential output structure. Differential electrodes use a pair of complementary signal lines to transmit signals, i.e., two signals, positive and negative, whose changes are synchronous. This method has better suppression of external electromagnetic interference and better signal integrity. Furthermore, using differential electrodes can reduce signal amplitude requirements. The single-ended push-pull structure relies on a single port for microwave signal driving, with high-frequency electrodes located on either side of the two phase-shift arms. The advantage of this structure is that the two PN junctions are connected in series, reducing the parallel capacitance and effectively reducing microwave losses of the traveling wave electrodes. However, its compatibility with current differential drive structures is poor. Currently, the bandwidth of silicon-based MZM modulators remains limited, necessitating the achievement of high-bandwidth, high-speed modulator structures without excessively sacrificing modulation efficiency. Summary of the Invention
[0004] The technical problem to be solved by the present invention is to provide a differential electrode Mach-Zehnder silicon-based electro-optic modulator based on frequency domain equalization technology, which can improve the bandwidth of the device.
[0005] The technical solution adopted by this invention to solve its technical problem is: to provide a differential electrode Mach-Zehnder silicon-based electro-optic modulator based on frequency domain equalization technology, comprising:
[0006] basal layer;
[0007] A differential T-type electrode structure is located above the substrate layer and includes a first ground electrode, a first signal electrode, a ground electrode, a second signal electrode, and a second ground electrode arranged in parallel.
[0008] A waveguide layer, located on the upper surface of the substrate layer, includes a first modulator region, a second modulator region, and an equalizer region. The optical path transmission direction and the circuit transmission direction are the same in the first and second modulator regions, while the optical path transmission direction and the circuit transmission direction are opposite in the equalizer region. The first modulator region is located between a first signal electrode and a ground electrode, the second modulator region is located between a ground electrode and a second signal electrode, and the equalizer region is located between a first signal electrode and a ground electrode. Each of the first, second, and equalizer regions includes a first phase shift arm and a second phase shift arm. P-type and N-type doped regions are formed within the first and second phase shift arms of each of the first, second, and equalizer regions to form a PN junction. The PN junction of the first phase shift arm... The first phase shifter and the second phase shifter in the first modulator region are connected in series with the PN junction of the second phase shifter; the input ends of the first phase shifter and the second phase shifter in the first modulator region are connected to the input waveguide through a multimode interference beam splitter; the input end of the first phase shifter in the second modulator region is connected to the first phase shifter in the first modulator region through a bent waveguide; the output end of the second phase shifter in the second modulator region is connected to the second phase shifter in the first modulator region through a bent waveguide; the output end of the first phase shifter and the second phase shifter in the equalizer region is connected to the output waveguide through a multimode interference beam splitter; a hot-tuning region is provided on one of the phase shifters in the first phase shifter and the second phase shifter in the equalizer region.
[0009] The P-type doped region contains three doping structures: lightly doped p structure, moderately doped p+ structure, and heavily doped p++ structure.
[0010] The N-type doped region contains three doping structures: lightly doped n-structure, moderately doped n+ structure, and heavily doped n++ structure.
[0011] The P-type doped region of the first phase shift arm in the first modulation region is connected to the first signal electrode through a via, and the P-type doped region of the second phase shift arm in the first modulation region is connected to the ground electrode through a via; the N-type doped region of the first phase shift arm in the first modulation region is connected to the N-type doped region of the second phase shift arm in the first modulation region.
[0012] The P-type doped region of the first phase shift arm in the second modulation region is connected to the ground electrode through a via, and the P-type doped region of the second phase shift arm in the second modulation region is connected to the second signal electrode through a via; the N-type doped region of the first phase shift arm in the second modulation region is connected to the N-type doped region of the second phase shift arm in the second modulation region.
[0013] The P-type doped region of the first phase shift arm in the equalizer region is connected to the ground electrode through a via, and the P-type doped region of the second phase shift arm in the equalizer region is connected to the first signal electrode through a via; the N-type doped region of the first phase shift arm in the equalizer region is connected to the N-type doped region of the second phase shift arm in the equalizer region.
[0014] The second signal electrode and the second ground electrode are provided with curved sections.
[0015] The first modulator region, the second modulator region, and the equalizer region are all provided with on-chip loads for matching the traveling wave electrodes.
[0016] Beneficial effects
[0017] Due to the adoption of the above technical solutions, the present invention has the following advantages and positive effects compared with the prior art: The present invention reduces capacitance by connecting PN junctions in series, and uses the phase difference of high frequency signals to compensate for frequency response roll-off by introducing an equalizer structure for reverse transmission of light and electricity, and uses a differential electrode structure to load high-speed electrical signals, which has the advantages of large bandwidth and high speed, and is easy to integrate with the driver. Attached Figure Description
[0018] Figure 1 This is a structural diagram of a differential electrode Mach-Zehnder silicon-based electro-optic modulator based on frequency domain equalization technology according to an embodiment of the present invention.
[0019] Figure 2 This is a partial cross-sectional view of the modulator / equalizer region in an embodiment of the present invention. Detailed Implementation
[0020] The present invention will be further illustrated below with reference to specific embodiments. It should be understood that these embodiments are for illustrative purposes only and are not intended to limit the scope of the invention. Furthermore, it should be understood that after reading the teachings of this invention, those skilled in the art can make various alterations or modifications to the invention, and these equivalent forms also fall within the scope defined by the appended claims.
[0021] Embodiments of the present invention relate to a differential electrode Mach-Zehnder silicon-based electro-optic modulator based on frequency domain equalization technology, such as... Figure 1 and Figure 2 As shown, it includes:
[0022] basal layer;
[0023] A differential T-type electrode structure is located above the substrate layer and includes a first ground electrode G1, a first signal electrode S1, a ground electrode G0, a second signal electrode S2, and a second ground electrode G2 arranged in parallel.
[0024] The waveguide layer, located on the upper surface of the substrate layer, includes a first modulator region 1, a second modulator region 2, and an equalizer region 3. The optical path transmission direction and the circuit transmission direction are the same in the first modulator region 1 and the second modulator region 2, while the optical path transmission direction and the circuit transmission direction are opposite in the equalizer region 3.
[0025] The first modulator region 1 is located between the first signal electrode S1 and the ground electrode G0, and includes a first phase shift arm 11 and a second phase shift arm 12. Both the first phase shift arm 11 and the second phase shift arm 12 form P-type doped regions and N-type doped regions to form PN junctions. The PN junction of the first phase shift arm 11 is connected in series with the PN junction of the second phase shift arm 12. The P-type doped region has three doping structures: lightly doped p structure, medium doped p+ structure, and heavily doped p++ structure. The N-type doped region has three doping structures: lightly doped n structure, medium doped n+ structure, and heavily doped n++ structure. In this embodiment, the heavily doped p++ structure of the first phase shift arm 11 in the first modulation region 1 is connected to the first signal electrode S1 through a via, and the heavily doped p++ structure of the second phase shift arm 12 in the first modulation region 1 is connected to the ground electrode G0 through a via; the heavily doped n++ structure of the first phase shift arm 11 in the first modulation region 1 is connected to the heavily doped n++ structure of the second phase shift arm 12 in the first modulation region 1, thus realizing the series connection of the PN junction of the first phase shift arm 11 and the PN junction of the second phase shift arm 12. In this embodiment, the input terminals of the first phase shift arm 11 and the second phase shift arm 12 in the first modulator region 1 are connected to the input waveguide 4 through a 1×2 multimode interference beamsplitter.
[0026] The second modulator region 2 is located between the ground electrode G0 and the second signal electrode S2, and includes a first phase shift arm 21 and a second phase shift arm 22. Both the first phase shift arm 21 and the second phase shift arm 22 form P-type doped regions and N-type doped regions to form PN junctions. The PN junction of the first phase shift arm 21 is connected in series with the PN junction of the second phase shift arm 22. The P-type doped region has three doping structures: lightly doped p structure, medium doped p+ structure and heavily doped p++ structure. The N-type doped region has three doping structures: lightly doped n structure, medium doped n+ structure and heavily doped n++ structure. In this embodiment, the heavily doped p++ structure of the first phase shift arm 21 in the second modulation region 2 is connected to the ground electrode G0 through a via, and the heavily doped p++ structure of the second phase shift arm 22 in the second modulation region 2 is connected to the second signal electrode S2 through a via; the heavily doped n++ structure of the first phase shift arm 21 in the second modulation region 2 is connected to the heavily doped n++ structure of the second phase shift arm 22 in the second modulation region 2, thus realizing the series connection of the PN junction of the first phase shift arm 21 and the PN junction of the second phase shift arm 22. In this embodiment, the input terminal of the first phase shift arm 21 in the second modulator region 2 is connected to the output terminal of the first phase shift arm 11 in the first modulator region 1 through a bent waveguide, and the input terminal of the second phase shift arm 22 in the second modulator region 2 is connected to the output terminal of the second phase shift arm 12 in the first modulator region 1 through a bent waveguide, wherein the bent waveguide is an undoped silicon waveguide. In order to achieve photoelectric rate matching, in this embodiment, a curved electrode is provided in the second signal electrode S2 to compensate for the phase difference in the first half of the light transmission, so that the photoelectric phase is matched when the light path is transmitted in the second half.
[0027] The equalizer region 3 is located between the first signal electrode S1 and the ground electrode G0, and includes a first phase shift arm 31 and a second phase shift arm 32. Both the first phase shift arm 31 and the second phase shift arm 32 form P-type doped regions and N-type doped regions to form PN junctions. The PN junction of the first phase shift arm 31 is connected in series with the PN junction of the second phase shift arm 32. The P-type doped region has three doping structures: lightly doped p structure, medium doped p+ structure, and heavily doped p++ structure. The N-type doped region has three doping structures: lightly doped n structure, medium doped n+ structure, and heavily doped n++ structure. In this embodiment, the heavily doped p++ structure of the first phase shift arm 31 in equalizer region 3 is connected to the ground electrode G0 through a via, and the heavily doped p++ structure of the second phase shift arm 32 in equalizer region 3 is connected to the first signal electrode S1 through a via. The heavily doped n++ structure of the first phase shift arm 31 in equalizer region 3 is connected to the heavily doped n++ structure of the second phase shift arm 32 in equalizer region 3, thus realizing the series connection of the PN junction of the first phase shift arm 31 and the PN junction of the second phase shift arm 32. In this embodiment, the input terminal of the first phase shift arm 31 in equalizer region 3 is connected to the output terminal of the first phase shift arm 21 in the second modulator region 2 through a bent waveguide, and the input terminal of the second phase shift arm 32 in equalizer region 3 is connected to the output terminal of the second phase shift arm 22 in the second modulator region 2 through a bent waveguide, wherein the bent waveguide is an undoped silicon waveguide. In this embodiment, the output terminals of the first phase shift arm 31 and the second phase shift arm 32 in equalizer region 3 are connected to the output waveguide 5 through a 1×2 multimode interference beamsplitter. In this embodiment, a thermal adjustment region (e.g., adding a heater) can be provided on one of the phase shift arms 31 and 32 in the equalizer region 3, and the operating point of the device can be adjusted by introducing the thermal adjustment region.
[0028] In this embodiment, a GSGSG differential T-type electrode structure is used to load the high-frequency signal. The input waveguide 4 is split into two paths after passing through a 1×2 multimode interference beam splitter (MMI). The two phase shift arms in the first modulator region 1 are located between the ground electrode G0 and the first signal electrode S1. The two phase shift arms adopt a six-level doping structure, corresponding to the lightly doped p, n region, the medium doped p+, n+ region, and the heavily doped p++, n++ region, respectively. The pn junctions of the two phase shift arms are connected in series. The high-frequency electrode is located on both sides of the phase shift arm. A reverse bias voltage is applied between the two phase shift arms to make it work in reverse bias mode. The high-frequency electrode is connected to both sides of the two phase shift arms through a via, that is, the two PN junctions are connected in series, so the junction capacitance can be reduced by half, effectively reducing the RC delay. In the second modulator region 2, the two phase-shifting arms are bent and positioned between the ground electrode G0 and the second signal electrode S2. The bent waveguide is an undoped silicon waveguide. To achieve photoelectric rate matching, the second signal electrode S2 has a bent section to compensate for the phase difference in the first half of the optical transmission, ensuring photoelectric phase matching in the second half of the optical path. In the latter part of the optical path transmission (i.e., the equalizer region), the phase-shifting arm waveguide returns through the bent waveguide to the area between the ground electrode G0 and the first signal electrode S1 for modulation. At this point, the optical path transmission direction is opposite to the circuit transmission direction.
[0029] In the low-frequency operating range, the transmission loss of the electrodes is low, allowing the two signals arriving at the in-phase and out-of-phase modulation sections to maintain similar amplitude levels. Based on this, the two signals can effectively cancel each other out through precise phase superposition, thus exhibiting the characteristic response of this frequency band. However, in the high-frequency operating range, the transmission loss of the electrodes increases significantly, causing the amplitude of the signal transmitted to the out-of-phase modulation section to decrease drastically due to excessive attenuation, thereby disrupting the amplitude matching condition of the two signals. Under these circumstances, the original phase cancellation effect is weakened, and the phase superposition mechanism of the two signals changes. Ultimately, through this dynamic adjustment process, the modulator's response characteristics in the high-frequency band are effectively compensated, and its high-frequency performance is optimized, thus ultimately compensating for the high-frequency response. Simultaneously, the device employs an equal-arm design, adjusting the device's operating point by introducing a thermally adjustable region. Furthermore, the high-frequency electrode terminals have on-chip loads (i.e., on-chip loads are provided in the first modulator region, the second modulator region, and the equalizer region), the size of which is consistent with the impedance of the electrode after loading the pn junction.
[0030] It is not difficult to see that this implementation adopts a reverse folding method to reduce the length of the device. At the same time, in terms of the PN junction, a scheme is adopted in which the high-frequency electrodes are located on both sides of the two phase shift arms. By reducing the capacitance through the series PN junction, the bandwidth of the device can be further improved. Meanwhile, by introducing an equalizer structure for reverse optical and electrical transmission, the phase difference of the high-frequency signal is used to compensate for the frequency response roll-off.
Claims
1. A differential electrode Mach-Zehnder silicon-based electro-optic modulator based on frequency domain equalization technique, characterized in that, The application relates to a differential T electrode structure, which comprises a substrate layer, a differential T electrode structure arranged above the substrate layer and comprising a first ground electrode, a first signal electrode, a ground electrode, a second signal electrode and a second ground electrode arranged in parallel, and a waveguide layer arranged on the upper surface of the substrate layer and comprising a first modulator region, a second modulator region and a balancer region. The application relates to a differential T electrode structure, which comprises a substrate layer, a differential T electrode structure arranged above the substrate layer and comprising a first ground electrode, a first signal electrode, a ground electrode, a second signal electrode and a second ground electrode arranged in parallel, and a waveguide layer arranged on the upper surface of the substrate layer and comprising a first modulator region, a second modulator region and a balancer region. The application relates to a differential T electrode structure, which comprises a substrate layer, a differential T electrode structure arranged above the substrate layer and comprising a first ground electrode, a first signal electrode, a ground electrode, a second signal electrode and a second ground electrode arranged in parallel, and a waveguide layer arranged on the upper surface of the substrate layer and comprising a first modulator region, a second modulator region and a balancer region. The application relates to a differential T electrode structure, which comprises a substrate layer, a differential T electrode structure arranged above the substrate layer and comprising a first ground electrode, a first signal electrode, a ground electrode, a second signal electrode and a second ground electrode arranged in parallel, and a waveguide layer arranged on the upper surface of the substrate layer and comprising a first modulator region, a second modulator region and a balancer region.
2. The frequency-domain equalization technique based differential electrode Mach-Zehnder silicon optical modulator of claim 1, wherein, The application relates to a differential T electrode structure, which comprises a substrate layer, a differential T electrode structure arranged above the substrate layer and comprising a first ground electrode, a first signal electrode, a ground electrode, a second signal electrode and a second ground electrode arranged in parallel, and a waveguide layer arranged on the upper surface of the substrate layer and comprising a first modulator region, a second modulator region and a balancer region.
3. The frequency-domain equalization technique based differential electrode Mach-Zehnder silicon optical modulator of claim 1, wherein, The application relates to a differential T electrode structure, which comprises a substrate layer, a differential T electrode structure arranged above the substrate layer and comprising a first ground electrode, a first signal electrode, a ground electrode, a second signal electrode and a second ground electrode arranged in parallel, and a waveguide layer arranged on the upper surface of the substrate layer and comprising a first modulator region, a second modulator region and a balancer region.
4. The frequency-domain equalization technique based differential electrode Mach-Zehnder silicon optical modulator of claim 1, wherein, The application relates to a differential T electrode structure, which comprises a substrate layer, a differential T electrode structure arranged above the substrate layer and comprising a first ground electrode, a first signal electrode, a ground electrode, a second signal electrode and a second ground electrode arranged in parallel, and a waveguide layer arranged on the upper surface of the substrate layer and comprising a first modulator region, a second modulator region and a balancer region.
5. The frequency-domain equalization technique based differential electrode Mach-Zehnder silicon optical modulator of claim 1, wherein, The application relates to a differential T electrode structure, which comprises a substrate layer, a differential T electrode structure arranged above the substrate layer and comprising a first ground electrode, a first signal electrode, a ground electrode, a second signal electrode and a second ground electrode arranged in parallel, and a waveguide layer arranged on the upper surface of the substrate layer and comprising a first modulator region, a second modulator region and a balancer region. The application relates to a differential T electrode structure, which comprises a substrate layer, a differential T electrode structure arranged above the substrate layer and comprising a first ground electrode, a first signal electrode, a ground electrode, a second signal electrode and a second ground electrode arranged in parallel, and a waveguide layer arranged on the upper surface of the substrate layer and comprising a first modulator region, a second modulator region and a balancer region. The application relates to a differential T electrode structure, which comprises a substrate layer, a differential T electrode structure arranged above the substrate layer and comprising a first ground electrode, a first signal electrode, a ground electrode, a second signal electrode and a second ground electrode arranged in parallel, and a waveguide layer arranged on the upper surface of the substrate layer and comprising a first modulator region, a second modulator region and a balancer region. The application relates to a differential T electrode structure, which comprises a substrate layer, a differential T electrode structure arranged above the substrate layer and comprising a first ground electrode, a first signal electrode, a ground electrode, a second signal electrode and a second ground electrode arranged in parallel, and a waveguide layer arranged on the upper surface of the substrate layer and comprising a first modulator region, a second modulator region and a balancer region. The application relates to a differential T electrode structure, which comprises a substrate layer, a differential T electrode structure arranged above the substrate layer and comprising a first ground electrode, a first signal electrode, a ground electrode, a second signal electrode and a second ground electrode arranged in parallel, and a waveguide layer arranged on the upper surface of the substrate layer and comprising a first modulator region, a second modulator region and a balancer region. The application relates to a differential T electrode structure, which comprises a substrate layer, a differential T electrode structure arranged above the substrate layer and comprising a first ground electrode, a first signal electrode, a ground electrode, a second signal electrode and a second ground electrode arranged in parallel, and a waveguide layer arranged on the upper surface of the substrate layer and comprising a first modulator region, a second modulator region and a balancer region. The application relates to a differential T electrode structure, which comprises a substrate layer, a differential T electrode structure arranged above the substrate layer and comprising a first ground electrode, a first signal electrode, a ground electrode, a second signal electrode and a second ground electrode arranged in parallel, and a waveguide layer arranged on the upper surface of the substrate layer and comprising a first modulator region, a second modulator region and a balancer region. The application relates to a differential T electrode structure, which comprises a substrate layer, a differential T electrode structure arranged above the substrate layer and comprising a first ground electrode, a first signal electrode, a ground electrode, a second signal electrode and a second ground electrode arranged in parallel, and a waveguide layer arranged on the upper surface of the substrate layer and comprising a first modulator region, a second modulator region and a balancer region. The application relates to a differential T electrode structure, which comprises a substrate layer, a differential T electrode structure arranged above the substrate layer and comprising a first ground electrode, a first signal electrode, a ground electrode, a second signal electrode and a second ground electrode arranged in parallel, and a waveguide layer arranged on the upper surface of the substrate layer and comprising a first modulator region, a second modulator region and a balancer region. The application relates to a differential T electrode structure, which comprises a substrate layer, a differential T electrode structure arranged above the substrate layer and comprising a first ground electrode, a first signal electrode, a ground electrode, a second signal electrode and a second ground electrode arranged in parallel, and a waveguide layer arranged on the upper surface of the substrate layer and comprising a first modulator region, a second modulator region and a balancer region. The application relates to a differential T electrode structure, which comprises a substrate layer, a differential T electrode structure arranged above the substrate layer and comprising a first ground electrode, a first signal electrode, a ground electrode, a second signal electrode and a second ground electrode arranged in parallel, and a waveguide layer arranged on the upper surface of the substrate layer and comprising a first modulator region, a second modulator region and a balancer region. The application relates to a differential T electrode structure, which comprises a substrate layer, a differential T electrode structure arranged above the substrate layer and comprising a first ground electrode, a first signal electrode, a ground electrode, a second signal electrode and a second ground electrode arranged in parallel, and a waveguide layer arranged on the upper surface of the substrate layer and comprising a first modulator region, a second modulator region and a balancer region. The application relates to a differential T electrode structure, which comprises a substrate layer, a differential T electrode structure arranged above the substrate layer and comprising a first ground electrode, a first signal electrode, a ground electrode, a second signal electrode and a second ground electrode arranged in parallel, and a waveguide layer arranged on the upper surface of the substrate layer and comprising a first modulator region, a second modulator region and a balancer region. The application relates to a differential T electrode structure, which comprises a substrate layer, a differential T electrode structure arranged above the substrate layer and comprising a first ground electrode, a first signal electrode, a ground electrode, a second signal electrode and a second ground electrode arranged in parallel, and a waveguide layer arranged on the upper surface of the substrate layer and comprising a first modulator region, a second modulator region and a balancer region. The application relates to a differential T electrode structure, which comprises a substrate layer, a differential T electrode structure arranged above the substrate layer and comprising a first ground electrode, a first signal electrode, a ground electrode, a second signal electrode and a second ground electrode arranged in parallel, and a waveguide layer arranged on the upper surface of the substrate layer and comprising a first modulator region, a second modulator region and a balancer region. The application relates to a differential T electrode structure, which comprises a substrate layer, a differential T electrode structure arranged above the substrate layer and comprising a first ground electrode, a first signal electrode, a ground electrode, a second signal electrode and a second ground electrode arranged in parallel, and a waveguide layer arranged on the upper surface of the substrate layer and comprising a first modulator region, a second modulator region and a balancer region. The application relates to a differential T electrode structure, which comprises a substrate layer, a differential T electrode structure arranged above the 6. The frequency-domain equalization technique based differential electrode Mach-Zehnder silicon optical modulator of claim 1, wherein, The P-type doped region of the first phase shift arm in the equalizer region is connected with the ground electrode through a via, and the P-type doped region of the second phase shift arm in the equalizer region is connected with the first signal electrode through a via; the N-type doped region of the first phase shift arm in the equalizer region is connected with the N-type doped region of the second phase shift arm in the equalizer region.
7. The frequency-domain equalization technique based differential electrode Mach-Zehnder silicon optical modulator of claim 1, wherein, The second signal electrode and the second ground electrode are provided with a bending section.
8. The frequency-domain equalization technique based differential electrode Mach-Zehnder silicon optical modulator of claim 1, wherein, On-chip loads for matching with the traveling wave electrode are arranged in the first modulator region, the second modulator region and the equalizer region.