High-precision vibration-damping die bonding device and die bonding method
By designing a high-precision vibration damping die bonding device, the device utilizes the step-by-step deceleration motion of the hysteresis cylinder and telescopic piston assembly, combined with springs and counterweight rings to buffer vibration, thus solving the vibration and impact problems when the wafer contacts the substrate and achieving high-precision and high-efficiency die bonding operations.
Patent Information
- Application Number
- CN202511300896.X
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-09-12
- Publication Date
- 2025-12-19
Smart Images

Figure CN121171900A_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The present application relates to the field of die bonding technology, and particularly relates to a high-precision vibration-reducing die bonding device and a die bonding method. BACKGROUND
[0002] As a key semiconductor packaging equipment, the main function of a die bonder is to accurately place a chip on a substrate. With the rapid development of the semiconductor industry, chip packaging technology is constantly evolving towards high density and high precision, which puts forward more stringent requirements for the performance of the die bonder. In the die bonding process, any slight vibration can significantly affect the positioning accuracy of the chip, and thus affect the packaging quality and product reliability.
[0003] The above vibration mainly comes from the vibration generated during the operation of the suction device and the movement of the wafer towards the substrate driven by the suction device. Therefore, the existing method is to set a high-precision damping platform to reduce the transmission of vibration in the contact moment, thereby reducing the influence of external vibration on the die bonding operation to a certain extent. However, since the volume of the wafer relative to the substrate is small, the range of the vibration area is small, and the use of the damping platform to achieve damping can only eliminate the vibration generated during the movement of the die bonding device to a certain extent.
[0004] Secondly, when the wafer moves towards the substrate, the wafer generally adopts a pneumatic cylinder to push down, and the wafer will rapidly descend relative to the substrate. When the wafer contacts the substrate, a certain impact force will be generated due to inertia, which will reduce the alignment accuracy between the wafer and the substrate, and even may damage the wafer or the substrate. SUMMARY
[0005] The present application aims to provide a high-precision vibration-reducing die bonding device and a die bonding method to solve the problems raised in the background.
[0006] To achieve the above-mentioned purpose, the present application provides the following technical solutions:
[0007] A high-precision vibration-reducing die bonding device is installed on a driving unit, comprising:
[0008] A grabbing device is slidingly arranged on the driving unit, and a damping structure is arranged on the grabbing device;
[0009] A containment cylinder is detachably installed on the driving unit, and two groups of driving chambers with different diameters are formed in the containment cylinder;
[0010] A telescopic piston group is arranged in the containment cylinder and connected with the grabbing device, and when the containment cylinder is uniformly filled with compressed gas, the telescopic piston group can drive the grabbing device to move at a gradually reduced speed;
[0011] A release structure in one-way communication with the holding cylinder, which can make the holding cylinder in communication with the outside when the grabbing device moves to a predetermined position.
[0012] As a further aspect of the application: the damping assembly includes a plurality of third cylindrical springs circumferentially equidistantly arranged outside the grabbing device, and the end of the third cylindrical spring away from the grabbing device is connected with a counterweight ring sleeved outside the grabbing device.
[0013] As a further aspect of the application: the holding cylinder is sequentially provided with a first holding cavity and a second holding cavity along the intake direction thereof, the first holding cavity and the second holding cavity form two groups of drive chambers, and the circumferential diameter of the first holding cavity is smaller than that of the second holding cavity.
[0014] As a further aspect of the application: the telescopic piston group includes a first sealing plug sealingly and slidingly installed in the first holding cavity and a second sealing plug sealingly and slidingly installed in the second holding cavity, and the first sealing plug and the second sealing plug are connected by a telescopic rod;
[0015] When the compressed gas is filled into the holding cylinder, the first sealing plug can drive the second sealing plug to move along the second holding cavity when moving to the end of the first holding cavity.
[0016] As a further aspect of the application: the telescopic rod includes a telescopic shaft fixedly connected with the first sealing plug coaxially and a sliding sleeve fixedly connected with the second sealing plug coaxially, and the sliding sleeve is sealingly and slidingly connected with the telescopic shaft.
[0017] A sliding abutment structure is arranged between the sliding sleeve and the telescopic shaft, which can make the first sealing plug and the second sealing plug move synchronously.
[0018] As a further aspect of the application: the sliding abutment structure includes a limiting groove arranged along the length direction of the telescopic shaft and a limiting block arranged on the inner wall of the sliding sleeve, and when the limiting block abuts against the end of the limiting groove, the first sealing plug can move synchronously with the second sealing plug.
[0019] As a further aspect of the application: one side of the second sealing plug is provided with a connecting shaft penetrating through the holding cylinder, a first cylindrical spring is sleeved on the connecting shaft, one end of the first cylindrical spring is connected with the second sealing plug, and the other end is connected with the inner wall of the holding cylinder.
[0020] As a further scheme of the present application: the release structure comprises a connecting frame arranged on the side of the grabbing device, a one-way valve is fixedly installed on the connecting frame, and the one-way valve is connected with one end of the first holding cavity away from the second holding cavity through a gas guide pipe;
[0021] The release structure further comprises an energy storage kit arranged on the connecting frame, and a plugging piece for plugging the one-way valve is arranged on the energy storage kit.
[0022] As a further scheme of the present application: the energy storage kit comprises a trigger shaft slidingly arranged through the connecting frame, an abutting piece is arranged at one end of the trigger shaft, and the other end of the trigger shaft is connected with the plugging piece through a connecting plate;
[0023] The energy storage kit further comprises a limiting ring arranged on the trigger shaft and a second cylindrical spring sleeved on the trigger shaft, one end of the second cylindrical spring is connected with the limiting ring, and the other end of the second cylindrical spring is connected with the connecting frame.
[0024] A method for die bonding using the high-precision die bonding device as described, comprising the following steps:
[0025] Step one: the grabbing device with the wafer sucked is transported to a specified position above the substrate through the driving unit;
[0026] Step two: uniform speed of compressed gas is filled into the holding cylinder;
[0027] Step three: the compressed gas enters the first holding cavity, at this time, the telescopic shaft can drive the grabbing device to move towards the substrate at a predetermined speed;
[0028] Step four: further uniform speed of compressed gas is filled into the holding cylinder, until the compressed gas enters the second holding cavity, at this time, the telescopic shaft drives the grabbing device to move towards the substrate at a speed lower than the predetermined speed;
[0029] Step five: when the release structure abuts against the substrate, the holding cylinder is in elastic communication with the outside, at this time, the wafer is in the state of being attached to the substrate.
[0030] Compared with the prior art, the present application has the following advantages:
[0031] During the process that the first sealing plug and the second sealing plug drive the grabbing device to move towards the substrate, the speed of the grabbing device will gradually decrease, which ensures that the grabbing device can first move at a faster speed and then move at a slower speed when approaching the substrate, thereby ensuring the timeliness of the grabbing device moving towards the substrate, improving the controllability of the position of the grabbing device, and avoiding the impact between the wafer and the substrate caused by too high speed, effectively preventing the damage of the substrate or the wafer;
[0032] Under the pressure relief effect of the one-way valve, the grabbing device can move towards the substrate at a slower speed, effectively eliminating the impact force between the wafer and the substrate on the grabbing device, ensuring that the two can be more gently attached, improving the precision and quality of die bonding;
[0033] The grabbing device can be damped and buffered during the entire die bonding stage, ensuring the precision of die bonding, improving the performance of die bonding equipment, and providing reliable protection for high-precision die bonding operations, which helps to improve product quality and production efficiency. BRIEF DESCRIPTION OF DRAWINGS
[0034] Figure 1 Structure diagram of an embodiment of the high-precision damping die bonding device.
[0035] Figure 2 Structure diagram of an embodiment of the high-precision damping die bonding device after removing the driving unit.
[0036] Figure 3 Structure diagram of another angle of an embodiment of the high-precision damping die bonding device after removing the driving unit.
[0037] Figure 4 Structure diagram of the internal structure of the containment cylinder in an embodiment of the high-precision damping die bonding device.
[0038] Figure 5 Structure cross-sectional view of the containment cylinder in an embodiment of the high-precision damping die bonding device.
[0039] Figure 6 Structure explosion view of the telescopic piston group in an embodiment of the high-precision damping die bonding device.
[0040] Figure 7 Structure diagram of the release structure and the grabbing device in an embodiment of the high-precision damping die bonding device.
[0041] Figure 8 Structure diagram of the release structure in an embodiment of the high-precision damping die bonding device.
[0042] Figure 9 Structure diagram of the damping structure in an embodiment of the high-precision damping die bonding device.
[0043] In the figure: 1, drive unit; 2, guide; 3, sliding connecting piece; 4, hold-up cylinder; 401, first hold-up cavity; 402, second hold-up cavity; 5, telescopic shaft; 501, limiting groove; 6, sliding sleeve; 7, limiting block; 8, connecting shaft; 9, first cylindrical spring; 10, air guide pipe; 11, connecting frame; 12, one-way valve; 13, plugging piece; 14, connecting plate; 15, trigger shaft; 1501, limiting ring; 16, abutting piece; 17, second cylindrical spring; 18, counterweight ring; 19, third cylindrical spring; 20, grabbing device; 21, first sealing plug; 22, second sealing plug. DETAILED DESCRIPTION
[0044] The technical solutions in the embodiments of the present application will be described clearly and completely below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative work fall within the scope of protection of the present application.
[0045] In addition, the elements in the present application are referred to as "fixed to" or "provided on" another element, which can be directly on another element or can have a middle element. When an element is considered to be "connected" to another element, it can be directly connected to another element or can have a middle element. The terms "vertical", "horizontal", "left", "right" and similar expressions used herein are for illustrative purposes only and do not represent the only implementation.
[0046] Please refer to Figures 1-9 In the embodiments of the present application, a high-precision vibration reduction die bonding device is installed on the drive unit 1, comprising: a grabbing device 20, a hold-up cylinder 4, a telescopic piston group, and a release structure. The drive unit 1 plays a key role in the die bonding process, which can accurately drive the grabbing device 20 to move flexibly in multiple directions on the horizontal plane. Through this high-precision movement control, the grabbing device 20 can accurately move to the top of the corresponding area of the substrate, providing an accurate initial position for subsequent wafer placement operations. When the grabbing device 20 moves towards the substrate, due to its accuracy, it can accurately place the wafer at the predetermined position of the substrate, thereby significantly improving the accuracy of die bonding.
[0047] The high-precision die bonding operation brings many benefits. First, it can effectively improve the quality and performance of the product. The electrical connection between the accurately placed wafer and the substrate is more stable and reliable, reducing the risk of circuit failure caused by positional deviation, thereby improving the yield of the product and reducing the production cost. Second, from the perspective of production efficiency, the quick and accurate movement and placement operation of the grabbing device 20 greatly shortens the time of the die bonding process. Compared with the traditional die bonding method, this efficient driving and grabbing device 20 can complete more die bonding operations in unit time, greatly improving the production efficiency and meeting the requirements of modern large-scale production for high efficiency and high precision. In addition, high-precision die bonding technology is also conducive to the miniaturization and integration of products.
[0048] Please refer to Figure 9 , the grabbing device 20 is slidingly arranged on the driving unit 1. Specifically, the grabbing device 20 is provided with a sliding connector 3, and the sliding connector 3 is slidingly connected with a guide 2 arranged on the driving unit 1. The grabbing device 20 is provided with a damping structure, and the damping assembly includes a plurality of third cylindrical springs 19 arranged circumferentially and equidistantly outside the grabbing device 20. One end of the third cylindrical spring 19 away from the grabbing device 20 is connected with a counterweight ring 18 sleeved outside the grabbing device 20.
[0049] During the die bonding process, the movement of the grabbing device 20 on the horizontal plane and the start and end of the movement of the wafer in the vertical direction will produce a certain degree of vibration due to inertia. Although the amplitude of these vibrations is relatively small, they have a non-negligible impact on the accurate positioning of the wafer. In order to effectively solve this problem, in this embodiment, the counterweight ring 18 is connected to the grabbing device 20 through a plurality of third cylindrical springs 19. When the grabbing device 20 moves on the horizontal plane, especially at the start and end of the movement, the counterweight ring 18 can maintain its original motion state by virtue of its own inertia, thereby effectively suppressing the vibration of the grabbing device 20 generated by the third cylindrical spring 19. In this way, the vibration generated by the grabbing device 20 during movement on the horizontal plane, such as the start of movement and direction switching, is significantly suppressed, thereby improving the consistency of the grabbing device 20 with the wafer after sucking the wafer, and effectively preventing the occurrence of die bonding precision decline caused by the existence of a small amount of deviation between the wafer and the grabbing device 20.
[0050] Further, when the grabbing device 20 generates movement in the vertical direction, the counterweight ring 18 can still maintain the original movement state, thereby effectively buffering the vibration generated by the vertical movement of the grabbing device 20, and under the joint action of the third cylindrical spring 19 and the counterweight ring 18, the grabbing device 20 can be buffered and damped in the entire stage of die bonding, thereby ensuring the precision of die bonding, improving the performance of the die bonding equipment, providing reliable guarantee for high-precision die bonding operation, and helping to improve product quality and production efficiency.
[0051] Please refer to Figures 4-6 The delay cylinder 4 is detachably mounted on the driving unit 1, two groups of driving chambers with different diameters are formed in the delay cylinder 4, the first delay chamber 401 and the second delay chamber 402 are sequentially arranged in the delay cylinder 4 along the air inlet direction, the first delay chamber 401 and the second delay chamber 402 form two groups of driving chambers, and the circumferential diameter of the first delay chamber 401 is smaller than that of the second delay chamber 402.
[0052] The telescopic piston group is arranged in the delay cylinder 4 and connected with the grabbing device 20, when the delay cylinder 4 is uniformly filled with compressed gas, the telescopic piston group can drive the grabbing device 20 to move at a step-by-step deceleration.
[0053] The telescopic piston group includes a first sealing plug 21 sealingly and slidingly arranged in the first delay chamber 401 and a second sealing plug 22 sealingly and slidingly arranged in the second delay chamber 402, and the first sealing plug 21 and the second sealing plug 22 are connected through a telescopic rod.
[0054] In the initial state, the first sealing plug 21 is located at one end of the first delay chamber 401 away from the second delay chamber 402, and the second sealing plug 22 is located at the position of the second delay chamber 402 close to the first delay chamber 401, when the external pump device (not shown in the figure) fills the delay cylinder 4 with compressed air, the compressed air first enters the first delay chamber 401 and pushes the first sealing plug 21 to move along the length direction of the first delay chamber 401, at this time, the first sealing plug 21 drives the grabbing device 20 to move downward at a predetermined speed through the telescopic rod.
[0055] When the first sealing plug 21 moves to the end of the first holding cavity 401, it will drive the second sealing plug 22 to move away from the first holding cavity 401 synchronously. Since the circumferential diameter of the second holding cavity 402 is larger than that of the first holding cavity 401, when the external pumping device maintains a constant inflation speed, the first sealing plug 21 and the second sealing plug 22 will be driven by the telescopic rod to move the grabbing device 20 at a speed lower than the predetermined speed, that is, the speed of the grabbing device 20 will gradually decrease during the process that the first sealing plug 21 and the second sealing plug 22 drive the grabbing device 20 to move towards the substrate. This design ensures that the grabbing device 20 can move at a faster speed first and then at a slower speed when it is close to the substrate, thereby ensuring the timeliness of the grabbing device 20 moving towards the substrate, improving the controllability of the position of the grabbing device 20, and avoiding the impact between the wafer and the substrate caused by too high speed, effectively preventing the damage of the substrate or the wafer.
[0056] When the compressed gas is filled into the holding cylinder 4, the first sealing plug 21 can drive the second sealing plug 22 to move along the second holding cavity 402 when it moves to the end of the first holding cavity 401;
[0057] The telescopic rod comprises a telescopic shaft 5 coaxially fixedly connected with the first sealing plug 21 and a sliding sleeve 6 coaxially fixedly connected with the second sealing plug 22, and the sliding sleeve 6 is in sealed sliding connection with the telescopic shaft 5;
[0058] A sliding abutment structure is arranged between the sliding sleeve 6 and the telescopic shaft 5, which can drive the first sealing plug 21 and the second sealing plug 22 to move synchronously. The sliding abutment structure comprises a limiting groove 501 arranged along the length direction of the telescopic shaft 5 and a limiting block 7 arranged on the inner wall of the sliding sleeve 6. When the limiting block 7 abuts against the end of the limiting groove 501, the first sealing plug 21 can move synchronously with the second sealing plug 22;
[0059] One side of the second sealing plug 22 is provided with a connecting shaft 8 penetrating through the holding cylinder 4, a first cylindrical spring 9 is sleeved on the connecting shaft 8, one end of the first cylindrical spring 9 is connected with the second sealing plug 22, and the other end is connected with the inner wall of the holding cylinder 4.
[0060] In the initial state, the limiting block 7 is in close abutment with the lower end of the limiting groove 501, at this time, the first sealing plug 21 is located at the end of the first holding cavity 401 away from the second holding cavity 402, and the second sealing plug 22 is located at the position of the second holding cavity 402 close to the first holding cavity 401. When the first sealing plug 21 starts to move downward, due to the supporting effect of the first cylindrical spring 9 on the second sealing plug 22, the first sealing plug 21 can move independently relative to the second sealing plug 22, that is, in the initial stage of the external pumping device filling compressed gas into the holding cylinder 4, only the first sealing plug 21 is in action. This design ensures that the telescopic shaft 5 can drive the grabbing device 20 to move towards the substrate at a predetermined speed, thereby improving the initial movement speed of the grabbing device 20 and ensuring its rapid response characteristics.
[0061] When the first sealing plug 21 moves to the end of the first holding cavity 401, the limiting block 7 can abut with the upper end of the limiting groove 501, at this time, the first sealing plug 21 and the second sealing plug 22 form a sealing plug structure with an area larger than the single area of the first sealing plug 21. In the case of the external pumping device filling compressed gas into the holding cylinder 4 at a constant speed, due to the increase of the sealing plug structure area, the telescopic shaft 5 will drive the grabbing device 20 to move at a slower speed. This design of speed change makes the grabbing device 20 move at a lower speed when approaching the substrate, thereby improving the precision and stability when placing the wafer.
[0062] Please refer to Figure 2 , Figure 3 , Figure 7 , Figure 8 , the release structure is in one-way communication with the holding cylinder 4, and the release structure can make the holding cylinder 4 and the external elastic guide communicate when the grabbing device 20 moves to a predetermined position, wherein the elastic guide is intended to express a one-way valve 12 with a spring structure, which needs to be opened under certain pressure requirements;
[0063] The release structure includes a connecting frame 11 arranged on the side of the grabbing device 20, and a one-way valve 12 is fixedly installed on the connecting frame 11. The one-way valve 12 is connected to the end of the first holding cavity 401 away from the second holding cavity 402 through the gas guide pipe 10, wherein the opening direction of the one-way valve 12 is from the inside of the holding cylinder 4 to the outside;
[0064] The release structure further includes an energy storage kit arranged on the connecting frame 11, and the energy storage kit is provided with a plugging piece 13 for plugging the one-way valve 12. The energy storage kit includes a trigger shaft 15 slidingly arranged through the connecting frame 11, one end of the trigger shaft 15 is provided with an abutting piece 16, and the other end is connected to the plugging piece 13 through a connecting plate 14;
[0065] The energy storage kit further comprises a limiting ring 1501 arranged on the trigger shaft 15 and a second cylindrical spring 17 sleeved on the trigger shaft 15, one end of the second cylindrical spring 17 is connected with the limiting ring 1501, and the other end is connected with the connecting frame 11.
[0066] In the initial state, the height of the abutting piece 16 is designed to be lower than the lower end of the grabbing device 20, and such an arrangement ensures that the abutting piece 16 can first contact the substrate during the movement of the grabbing device 20 towards the substrate. Since the abutting piece 16 is made of rubber, it can produce a certain buffering effect when it abuts against the substrate, thereby avoiding damage that may be caused by hard collision.
[0067] Further, in the initial state, the second cylindrical spring 17 is in a compressed state. This pre-compression state enables the trigger shaft 15 to press the blocking piece 13 against the one-way valve 12 with a predetermined pressure through the connecting plate 14. Meanwhile, the one-way valve 12 is also provided with a spring inside, which cooperates with the second cylindrical spring 17 to ensure that the compressed gas cannot escape from the one-way valve 12 when the compressed gas is filled into the volume cylinder 4. This double-spring mechanism ensures that the compressed gas filled into the volume cylinder 4 can stably drive the first sealing plug 21 and the second sealing plug 22 to move, thereby ensuring the stability and reliability of the entire system.
[0068] When the grabbing device 20 is about to reach the substrate, the abutting piece 16 will first contact the substrate. During the contact process, the abutting piece 16 can move upward relative to the grabbing device 20. This movement further compresses the second cylindrical spring 17 and separates the blocking piece 13 from the one-way valve 12. At this time, under the action of the high pressure inside the volume cylinder 4, the one-way valve 12 is open, thereby achieving a pressure relief effect. This pressure relief process enables the grabbing device 20 to move towards the substrate at a slower speed, effectively eliminating the impact force between the wafer on the grabbing device 20 and the substrate, thereby ensuring that the two can be more gently attached, improving the precision and quality of die bonding.
[0069] It should be noted that during the opening process of the one-way valve 12, the amount of gas escaping from the one-way valve 12 is less than the amount of gas filled into the volume cylinder 4 by the external pumping device, so that the compression inside the volume cylinder 4 is still increasing, but the increasing trend is slower, thereby ensuring that the grabbing device 20 can move towards the substrate at a slower speed.
[0070] After the wafer is placed, the external pumping device can suck back the gas in the volume cylinder 4. At this time, due to the one-way opening of the one-way valve 12, the external pumping device can only suck back the gas in the volume cylinder 4, thereby driving the first sealing plug 21 and the second sealing plug 22 to reset.
[0071] As an embodiment of the present application, a method for die bonding using the high-precision die bonding device is also provided, comprising the following steps:
[0072] Step one: the suction device 20 with the wafer is transported to the designated position above the substrate by the driving unit 1;
[0073] Step two: the compressed gas is uniformly filled into the holding cylinder 4 at a constant speed;
[0074] Step three: the compressed gas enters the first holding cavity 401, at this time the telescopic shaft 5 can drive the suction device 20 to move towards the substrate at a predetermined speed;
[0075] Step four: the compressed gas is further uniformly filled into the holding cylinder 4 at a constant speed, until the compressed gas enters the second holding cavity 402, at this time the telescopic shaft 5 drives the suction device 20 to move towards the substrate at a speed lower than the predetermined speed;
[0076] Step five: when the release structure abuts against the substrate, the holding cylinder 4 is in external elastic conduction, at this time the wafer is in the state of being attached to the substrate.
[0077] It is apparent for those skilled in the art that the present application is not limited to the details of the above-mentioned exemplary embodiments, and can be implemented in other specific forms without departing from the spirit or essential characteristics of the present application. Therefore, the embodiments should be regarded as exemplary and non-limiting, the scope of the present application is defined by the appended claims rather than the above description, and all changes falling within the meaning and scope of the equivalent elements of the claims are intended to be included in the present application. Any reference signs in the claims should not be regarded as limiting the claims involved.
[0078] In addition, it should be understood that although the present specification is described in terms of embodiments, not every embodiment contains only one independent technical solution, and the description of the specification is only for the sake of clarity, and those skilled in the art should regard the specification as a whole, and the technical solutions in each embodiment can also be properly combined to form other embodiments that those skilled in the art can understand.
Claims
1. A high-precision vibration damping and die bonding device, mounted on a drive unit, characterized in that, include: A gripping device is slidably mounted on the drive unit, and a vibration damping structure is provided on the gripping device; A hysteresis cylinder is detachably mounted on the drive unit, and two sets of drive chambers with different diameters are formed inside the hysteresis cylinder; A telescopic piston assembly is disposed inside the hysteresis cylinder and connected to the gripping device. When the hysteresis cylinder is filled with compressed gas at a constant speed, the telescopic piston assembly can drive the gripping device to decelerate step by step. The release structure is unidirectionally connected to the hysteresis cylinder, and the release structure can make the hysteresis cylinder elastically connected to the outside when the gripping device moves to a predetermined position.
2. The high-precision vibration damping and die bonding device according to claim 1, characterized in that, The vibration damping component includes multiple sets of third columnar springs arranged circumferentially at equal intervals outside the gripping device. The end of each third columnar spring away from the gripping device is connected to a counterweight ring sleeved outside the gripping device.
3. The high-precision vibration damping and die bonding device according to claim 2, characterized in that, The hysteresis cylinder is provided with a first hysteresis chamber and a second hysteresis chamber in sequence along its air intake direction. The first hysteresis chamber and the second hysteresis chamber form two sets of driving chambers, and the circumferential diameter of the first hysteresis chamber is smaller than the circumferential diameter of the second hysteresis chamber.
4. The high-precision vibration damping and die bonding device according to claim 3, characterized in that, The telescopic piston assembly includes a first sealing plug that is slidably installed in the first hysteresis cavity and a second sealing plug that is slidably installed in the second hysteresis cavity. The first sealing plug and the second sealing plug are connected by a telescopic rod. When compressed gas is filled into the hysteresis cylinder, the first sealing plug can drive the second sealing plug to move along the second hysteresis cavity when it moves to the end of the first hysteresis cavity.
5. The high-precision vibration damping and die bonding device according to claim 4, characterized in that, The telescopic rod includes a telescopic shaft coaxially and fixedly connected to the first sealing plug and a sliding sleeve coaxially and fixedly connected to the second sealing plug. The sliding sleeve is slidably and sealingly connected to the telescopic shaft. A sliding contact structure is provided between the sliding sleeve and the telescopic shaft, which enables the first sealing plug and the second sealing plug to move synchronously.
6. The high-precision vibration damping and die bonding device according to claim 5, characterized in that, The sliding contact structure includes a limiting groove arranged along the length of the telescopic shaft and a limiting block arranged on the inner wall of the sliding sleeve. When the limiting block abuts against the end of the limiting groove, the first sealing plug can move synchronously with the second sealing plug.
7. The high-precision vibration damping and die bonding device according to claim 4, characterized in that, A connecting shaft penetrating the hysteresis cylinder is provided on one side of the second sealing plug. A first cylindrical spring is sleeved on the connecting shaft. One end of the first cylindrical spring is connected to the second sealing plug, and the other end is connected to the inner wall of the hysteresis cylinder.
8. The high-precision vibration damping and die bonding device according to claim 3, characterized in that, The release structure includes a frame disposed on the side of the gripping device, and a one-way valve is fixedly installed on the frame. The one-way valve is connected to the end of the first hysteresis chamber away from the second hysteresis chamber through an air guide pipe. The release structure also includes an energy storage kit disposed on the connecting frame, and the energy storage kit is provided with a sealing element for sealing the one-way valve.
9. A high-precision vibration damping and die bonding device according to claim 8, characterized in that, The energy storage kit includes a trigger shaft that slides through the connecting frame. One end of the trigger shaft is provided with an abutment, and the other end is connected to the sealing member through a connecting plate. The energy storage kit also includes a limiting ring disposed on the trigger shaft and a second cylindrical spring sleeved on the trigger shaft. One end of the second cylindrical spring is connected to the limiting ring, and the other end is connected to the connecting frame.
10. A method for die bonding using the high-precision vibration damping die bonding device as described in any one of claims 1 to 9, characterized in that, Includes the following steps: Step 1: The gripping device holding the wafer is transported to the designated position above the substrate by the drive unit; Step 2: Inject compressed gas into the stabilization cylinder at a uniform speed; Step 3: Compressed gas enters the first hysteresis chamber, at which point the telescopic shaft can drive the gripping device to move toward the substrate at a predetermined speed; Step 4: Continue to uniformly fill the hysteresis cylinder with compressed gas until the compressed gas enters the second hysteresis chamber. At this time, the telescopic shaft drives the gripping device to move toward the substrate at a speed lower than the predetermined speed. Step 5: When the release structure comes into contact with the substrate, the hysteresis cylinder is made to be elastically connected to the outside, at which point the chip is in a state of being attached to the substrate.