Wafer processing apparatus

Abstract

In a wafer processing apparatus, the time required for wafer recovery is shortened. The wafer processing apparatus (IM, IM2) includes: a processing chamber (1) that performs high-temperature processing on a wafer (W) that is circular in plan view; a primary cooling chamber (X) for cooling the wafer (W) taken out from the processing chamber (1); a secondary cooling chamber (Y) for cooling the wafer (W) taken out from the primary cooling chamber (X); and pedestals (6, 6-1, 6a, 6b) disposed in the secondary cooling chamber (Y). The pedestals (6, 6-1, 6a, 6b) are provided with support parts (10) in surface contact with a region including the circumferential edge of an imaginary circle (Wp) having the same size as the wafer (W).

Description

Technical Field

[0001] The present invention relates to a wafer processing apparatus for cooling and storing wafers after high-temperature processing in a box. Background Technology

[0002] In wafer processing apparatuses that process semiconductor substrates, such as film deposition apparatuses and ion implantation apparatuses, wafers are processed at high temperatures of several hundred degrees Celsius. After wafer processing, the wafers are stored in a cassette; however, if the wafers are stored in the cassette while they are still hot, the cassette will deform due to the heat from the wafers. To prevent deformation of the cassette caused by the heat of the wafer, the wafer is cooled to below the heat resistance temperature of the cassette during the wafer transport path from the processing chamber to the cassette.

[0003] Patent Document 1 discloses a batch film deposition apparatus for staged cooling of wafers after high-temperature processing. The batch film deposition apparatus transports wafers processed in a processing chamber to a load lock chamber adjacent to the processing chamber. In the load lock chamber, primary cooling of the wafers using nitrogen gas is performed. The wafers after primary cooling are then transported from the load lock chamber to a wafer transfer chamber and placed in a cooling reservoir within the wafer transfer chamber. In the cooling reservoir, secondary cooling of the wafers is performed by supplying clean air from a clean air unit.

[0004] Furthermore, in Patent Document 1, in order to prevent a decrease in the throughput of the batch film deposition apparatus, film deposition processing on unprocessed wafers is performed in parallel with the secondary cooling of the wafers. This parallel processing absorbs the cooling wait time of the wafers during the secondary cooling process.

[0005] Patent Document 1: Japanese Patent Application Publication No. 2003-92329

[0006] Due to changes in device structure and reductions in wafer processing time, the cooling wait time of wafers during secondary cooling becomes a major factor limiting throughput. Therefore, it is desirable to shorten the cooling wait time of wafers during secondary cooling. Summary of the Invention

[0007] The main objective of this invention is to shorten the cooling waiting time of the wafer during secondary cooling in a wafer processing apparatus.

[0008] The wafer processing apparatus includes: a processing chamber for performing high-temperature processing on a wafer that is circular in plan view; a primary cooling chamber for cooling the wafer removed from the processing chamber; a secondary cooling chamber for cooling the wafer removed from the primary cooling chamber; and a platform disposed in the secondary cooling chamber, the platform having a support portion that surfaces in contact with a region containing a circumferential edge of an imaginary circle having the same dimensions as the wafer.

[0009] The wafer housed in the box is supported near its circumferential edge. With this in mind, a platform is positioned in the secondary cooling chamber such that the support portion of the platform that supports the wafer is configured to contact the area containing an imaginary circle with the same dimensions as the wafer. According to this platform support structure, during secondary cooling of the wafer at the platform, the area near the circumferential edge of the wafer supported by the box can be effectively cooled, thus shortening the cooling wait time of the wafer during secondary cooling.

[0010] The support portion is partially disposed in the circumferential direction of the imaginary circle, and the support area supported by the support portion includes the arcs on the imaginary circle corresponding to two chords drawn at the position sandwiching the center line that divides the imaginary circle into two parts.

[0011] The wafer is locally supported by the box. With this in mind, the stage can be miniaturized by making the structure a structure in which the support is locally provided in the circumference of an imaginary circle. When a support is provided along the entire circumference of an imaginary circle, the structure of the wafer transfer mechanism is limited. To address this, by providing support locally along the circumference of the imaginary circle, wafer transfer can also be performed at locations where no support is provided, thus increasing the design flexibility of wafer handling. Furthermore, if the support area supported by the support portion is configured to include an arc on the imaginary circle corresponding to two chords drawn at the position sandwiching the center line that divides the imaginary circle into two parts, it is possible to cool the vicinity of the circumferential edge of the wafer supported by the box.

[0012] Preferably, the two strings are separated from the center line at equal distances.

[0013] When viewed from the front of the box in the direction the wafer is stored, the box's support for the wafer is symmetrical. Taking this into account, by making the two chords equidistant from the center line, it is possible to reduce the temperature difference between the left and right sides of the wafer supported by the box.

[0014] Preferably, it also includes a temperature measuring device that measures the temperature at the support area of ​​the wafer supported by the pedestal.

[0015] When cooling the wafer at the pedestal, the temperature of the wafer can be measured to reliably determine whether the wafer cooling has been adequate.

[0016] Preferably, the temperature measuring device measures the overall temperature distribution of the support area of ​​the wafer.

[0017] By employing a structure that measures the overall temperature distribution of the support region of the crystal wafer, the accuracy of temperature measurement can be improved.

[0018] Preferably, the device includes a transport apparatus for transporting the wafer from the pedestal, and the wafer is transported based on the measurement results of the temperature measuring device.

[0019] By linking temperature measurement results with wafer handling, fully cooled wafers can be reliably transported to the housing.

[0020] The wafer housed in the box is supported near its circumferential edge. With this in mind, a platform is positioned in the secondary cooling chamber such that the support portion of the platform that supports the wafer is configured to contact the area containing an imaginary circle with the same dimensions as the wafer. According to this platform support structure, during secondary cooling of the wafer at the platform, the area near the circumferential edge of the wafer supported by the box can be effectively cooled, thus shortening the cooling wait time of the wafer during secondary cooling. Attached Figure Description

[0021] Figure 1 This is a schematic top view of a chip processing device. Figure 2 From Figure 1 The diagram shows a schematic cross-sectional view of the wafer processing apparatus as observed by the AA line. Figure 3 This is an explanatory diagram showing how the chip is supported by a base. Figure 4 It is along Figure 3 The cross-sectional view of the BB line is shown. Figure 5 This is an illustration of a chip supported by a box. Figure 6 This is a schematic top view showing a variation of the pedestal. Figure 7 This is a schematic cross-sectional view showing a modified example of a wafer processing device. Figure 8 This is an explanatory diagram showing how the chip is supported by a base. Figure 9 It is along Figure 8 The cross-sectional view of the BB line is shown. Figure 10 This is an explanatory diagram of the support area for the wafer supported by the pedestal. Detailed Implementation

[0022] As a wafer processing apparatus (IM) for performing predetermined processing on wafers at high temperatures, film deposition apparatus, dry etching apparatus, and ion implantation apparatus are known. Figure 1 The structure of the ion implantation device in these wafer processing devices (IM) is illustrated in the figure. Figure 1 This is a schematic top view showing the periphery of the processing chamber 1 of the ion implantation apparatus. Boxes 7a-7d house multiple wafers W. The wafers W are SiC, Si, etc., wafers that appear circular from a top view. A wafer that appears roughly circular from a top view is one that, when viewed from the surface of the wafer undergoing ion implantation, also includes wafers with notches or oriented planes formed at the ends of the wafer surface.

[0023] The transport robots 4a and 4b remove the wafer W from boxes 7a-7d and transport it to the alignment device 5. After the alignment device 5 adjusts the circumferential position of the wafer W, the transport robots 4a and 4b transport the wafer W to the vacuum preparation chambers 3a and 3b. Vacuum preparation chambers 3a and 3b switch the vacuum level inside, thereby enabling the transfer of wafer W between processing chamber 1 with different vacuum levels and transfer chamber 20 equipped with alignment device 5. A drive mechanism (not shown) moves the base plates of vacuum preparation chambers 3a and 3b in the direction of the front and back of the paper. The movement of the base plates is carried out after the chambers 3a and 3b switch from atmospheric to vacuum or vice versa.

[0024] The vacuum preparation chamber 3a is equipped with a heater for performing preheating of the wafer W. The stage 2 is equipped with either or both of an electrostatic chuck and a mechanical clamping mechanism for supporting the wafer W. The stage 2 is also equipped with a heater for heating the wafer W, which has been preheated in the vacuum preparation chamber 3a, to a predetermined temperature.

[0025] A high-temperature wafer W, supported on a stage 2 within a processing chamber 1, is transversely scanned by an ion beam delivered to the processing chamber 1 by an implantation mechanism unit (not shown). This transverse scanning irradiates the entire surface of the wafer W with the ion beam, performing ion implantation on the high-temperature wafer W.

[0026] If processing in processing chamber 1 is completed, the wafer W passes through vacuum preparation chamber 3b and transfer chamber 20 and is recycled into any boxes 7a-7d. The vacuum preparation chamber 3b also serves as a primary cooling chamber X, which is used for temporary cooling of the wafer W. Primary cooling of the wafer W is achieved by returning the pressure within the chamber to atmospheric pressure. Specifically, in the vacuum preparation chamber 3b, nitrogen gas is blown from one end of the chamber towards the other, parallel to the surface of the wafer W, thereby achieving primary cooling of the wafer W. Alternatively, primary cooling of the wafer W can also be achieved by blowing nitrogen gas from vertically upwards towards the surface of the wafer W. Furthermore, the return atmospheric pressure mentioned here refers to making the pressure inside the vacuum preparation chamber 3b the same as the pressure in the transport chamber 20, which is equipped with transport robots 4a, 4b, etc.

[0027] Processing chamber 1 is equipped with vacuum handles V1 and V2 that can rotate independently in the direction of the arrow shown in the figure. Vacuum handles V1 and V2 have gripping parts C1 and C2 around the wafer W. Vacuum handles V1 and V2 hold the wafer W located in vacuum preparation chambers 3a and 3b and transport it to the stage 2.

[0028] After primary cooling, the wafer W is transported from the vacuum preparation chamber 3b to the transport chamber 20, which also serves as the secondary cooling chamber Y. A platform 6 for performing secondary cooling of the wafer W is provided in the transport chamber 20. Figure 2 From Figure 1 A schematic cross-sectional view of the wafer processing apparatus IM observed along line AA. The platform 6 is positioned above the aligner 5. A lifting pin drive device 9 is positioned below the platform 6. The lifting pin drive device 9 is a device that moves three lifting pins up and down during the transfer of wafer W between the transport robots 4a, 4b and the platform 6. The number of lifting pins is an example. The number of lifting pins is not limited as long as the wafer W can be stably supported on the pins. For example, a single pin with a large supporting area for the wafer W can be used. To reduce the contact area with the back of the wafer W, the number of pins can be set to three or more, thus enabling the transported wafer W to be supported at multiple points (three or more).

[0029] Figure 3 From Figure 2 The diagram shows a top view of the stage 6 viewed from the P direction. The stage 6 has a support portion 10 that contacts a region containing the circumferential edge of an imaginary circle Wp, the imaginary circle Wp having the same dimensions as the wafer W. Furthermore, the stage 6 has a frame 11 on the outer side of the support portion 10. The frame 11 is a component mounted to the lower part of the support base 6 by bolts (not shown). An opening H is formed on the inner side of the support part 10. The lifting pin is moved up and down through the opening H by the lifting pin drive device 9.

[0030] Figure 4 It is along Figure 3 A cross-sectional view of the BB line is shown. The support portion 10 and the frame 11 have different heights in the vertical direction. They can also be configured so that their heights are the same or the height of the frame 11 is lower than the height of the support portion 10. However, to prevent the wafer W from detaching from the support portion 10, it is preferable to... Figure 4 As shown, the height of the frame 11 located outside the support 10 is higher than the height of the support 10.

[0031] Figure 5 This is an explanatory diagram showing how the chip W is supported by boxes 7a-7d. Boxes 7a-7d have multiple layers of shelves on both sides of the paper for storing the chip W. Figure 5 The shelf depicted is a multi-tiered shelf located in the middle. like Figure 5 As shown in (A), the boxes 7a-7d have a support portion 7s that supports the circumferential edge of the back side of the wafer W. The support portion 7s extends inward from the left and right sides of the shelf. Figure 5 Figure (B) depicts the state when the chip W is stored in the shelf of the boxes 7a-7d. As shown in the figure, a portion of the circumferential edge of the chip W is supported by the support portion 7s of the boxes 7a-7d.

[0032] Figure 5 The shelves of boxes 7a-7d shown are exemplary shelves. Other boxes that store wafers W, which are circular from above, also employ a structure that supports the circumferential edges of the wafers W from the left and right sides of the shelf.

[0033] Figure 3 The support portion 10 of the pedestal 6 depicted is capable of supporting the entire circumference of the wafer W. By supporting the circumferential edge of the wafer W with the support portion 10 of the pedestal 6, heat moves from the circumferential edge of the wafer W supported on the support portion 10 to the pedestal 6, and the temperature near the circumferential edge of the supported wafer W decreases.

[0034] When recovering chip W from boxes 7a-7d, such as Figure 5 As shown, in the shelves of boxes 7a-7d that house the wafer W, the circumferential edge of the wafer W is partially supported. (By...) Figure 3 The support portion 10 of the pedestal 6 shown supports the circumferential edge of the wafer W, thereby enabling the vicinity of the circumferential edge of the wafer W to reach a low temperature in a short time. As a result, the waiting time during secondary cooling can be shortened. Furthermore, in Patent Document 1, which is prior art, the cooling effect near the circumferential edge of the wafer is poor because the wafer W is supported when secondary cooling is performed at three points.

[0035] Figure 6 This is a schematic top view showing a modified example of the base 6. Figure 6 The pedestal 6-1 shown is with Figure 3 The difference in the pedestal 6 shown is that a heat sink F is provided on the frame 11 of the pedestal 6-1. By providing the heat sink F, the heat capacity of the pedestal 6-1 is increased, which can promote the heat transfer from the circumferential edge of the wafer W to the pedestal 6.

[0036] Heatsink F is not limited to Figure 6 The quantity shown in the diagram. It may also be less than or more than the quantity shown in the diagram. The heat sink F can also be positioned on the upper side of the frame 11 or the lower side of the support 10. Alternatively, it can be positioned anywhere as long as it does not obstruct the movement of the chip W by the handling robots 4a and 4b.

[0037] exist Figure 2 In the transport chamber 20, which is equipped with an alignment device 5 and transport robots 4a and 4b, a temperature measuring device 8 is installed on the ceiling. The temperature measuring device 8 is one or more radiation thermometers or thermal imaging cameras. Such a temperature measuring device 8 is used to measure the temperature near the circumferential edge of the wafer W supported on the pedestal 6. exist Figure 2 In the illustrated structural example, the temperature measuring device 8 is disposed on the inner wall of the handling chamber 20. However, from the viewpoint of preventing contamination of the temperature measuring device 8, replacement in case of failure, and handling of malfunctions, a structure that can transmit infrared light can also be adopted: an infrared-transmitting window is installed in the ceiling of the handling chamber 20, and the temperature measuring device 8 is disposed outside the handling chamber 20.

[0038] Based on the measurement results of temperature measuring device 8, the handling robots 4a and 4b transport the wafer W from the pedestal 6 to the boxes 7a-7d. Figure 1 The control device C described has a computing unit, a storage unit, etc., required to perform various processes. A reference value is pre-stored in the storage section of the control device C. This reference value is, for example, the heat resistance temperature of boxes 7a-7d. The circumferential edge temperature of the wafer W measured by the temperature measuring device 8 is sent to the control device C as an output signal S1. The control device C compares the reference value with the received measured value. When the measured value is lower than the reference value, the control device C controls the handling robots 4a and 4b to output a control signal S2 to start handling the wafer W.

[0039] Temperature measuring device 8 measures the temperature at any point along the circumferential edge of the wafer W supported on the pedestal 6. However, considering the possibility that the measurement point is an outlier, it can also be configured to measure the temperature at multiple points. In this case, the measurement results of all points can be compared with a reference value, and a decision can be made on whether the wafer W can be moved based on whether the measurement results of all points are lower than the reference value. Furthermore, in order to implement more accurate handling control of the wafer W, it is preferable to use a thermal imaging camera as a temperature measuring device 8 to measure the overall temperature distribution of the support area of ​​the wafer W supported on the pedestal 6. Multiple radiation thermometers can also be configured to measure the overall temperature distribution of the support area of ​​the wafer W. However, it is physically difficult to densely configure radiation thermometers, and thermal imaging cameras are preferred for ease of maintenance.

[0040] Figure 7 This is a schematic cross-sectional view showing a modified example of a chip processing device (IM). Figure 7 The recorded chip processing device IM2 and Figure 2 Unlike the described wafer processing apparatus IM, it has two platforms 6a and 6b arranged vertically. By increasing the number of platforms, it is possible to process the secondary cooling of the wafer W in parallel. exist Figure 2 In the structure shown, when continuously processing wafer W, during the secondary cooling of the previously processed wafer W at the stage 6, the next wafer W cannot be transferred to the stage 6 and must remain in the vacuum preparation chamber 3b. However, if... Figure 7 By adding a secondary cooling platform 6 as shown in the structure, the waiting time for transporting the components to the platform 6 can be eliminated.

[0041] When adding 6 pedestals, the number does not have to be two; three or more can be set. In addition, Figure 7 In the structure shown, the platform 6 is positioned above the aligner 5, but the platform 6 is not limited to this position. It can be positioned anywhere the wafer W can be moved by the handling robots 4a and 4b.

[0042] Even in such Figure 7 In the case where a platform 6 is added in the vertical direction as shown in the platforms 6a and 6b, the lifting pin drive device 9 can also be used to transfer the wafer W. However, under such a structure, the design freedom of handling the wafer W is limited due to the large size of the lifting pin drive device 9 and the inability to transfer the wafer W to the upper platform 6a when there is a wafer W on the lower platform 6b.

[0043] Therefore, in order to improve the design freedom of handling chip W, in Figure 7 In the wafer processing device IM2 shown, only the transfer robots 4a and 4b perform the handover of wafers W with each of the pedestals 6a and 6b. Figure 8 From Figure 7 The diagram shows a top view of pedestal 6a when viewed from direction P. Pedestal 6b, not shown, has the same structure as pedestal 6a. To enable the transfer of chip W by transport robots 4a and 4b, such as Figure 8 As shown, each stage 6a, 6b is divided into two parts along the circumference of an imaginary circle Wp having the same size as the wafer W. Furthermore, an open end OP is formed between each divided part along the circumference of the imaginary circle Wp.

[0044] Figure 8 The pedestal 6a shown is Figure 3 The pedestal 6 shown is the same, and has a support part 10 and a frame 11. Figure 9 It is along Figure 8 A cross-sectional view of the BB line as recorded. (and...) Figure 4 The structures shown are the same, except that the heights of the support 10 and the frame 11 are different.

[0045] According to Figure 5 As explained, the wafer W is partially supported by the housings 7a-7d. That is, the wafer W is not supported by the support portions 7s of the housings 7a-7d covering the entire area of ​​the circumferential edge of the back surface of the wafer W. Therefore, it is sufficient to set the support portion 10 of the stage 6a to support the circumferential edge portion of the opposing wafer W.

[0046] The chip W is then transferred to the bases 6a and 6b as follows. The transport robots 4a and 4b have hands that support the wafer W. When transferring the wafer W to the pedestal 6a, the hands of the transport robots 4a and 4b supporting the wafer W are moved horizontally above the pedestal 6a. Then, the hands of the transport robots 4a and 4b are moved downwards. At this time, since the pedestal 6a has an opening H and an open end OP, the transport robots 4a and 4b do not physically interfere with the pedestal 6a. If the hands of the transport robots 4a and 4b move to a position lower than the support portion 10, the transfer of the wafer W from the hands of the transport robots 4a and 4b to the support portion 10 ends.

[0047] When receiving the wafer W from the pedestal 6a, the hands of the handling robots 4a and 4b are moved horizontally and positioned directly below the wafer W supported on the pedestal 6a. At this time, since the pedestal 6a has an opening H and an open end OP, there is no physical interference between the handling robots 4a and 4b and the pedestal 6a. Then, the hands of the handling robots 4a and 4b are moved upward, completing the transfer of the wafer W from the pedestal 6a to the hands of the handling robots 4a and 4b.

[0048] use Figure 10 This indicates that... Figure 8 The support area supported by the support portion 10 in the pedestal 6a shown. Two chords ST are drawn parallel to the center line CL at positions sandwiching the center line CL, the center line CL dividing an imaginary circle Wp with the same dimensions as the wafer W into two parts. The support area supported by the support portion 10 is an arc AR (in the imaginary circle Wp corresponding to these chords ST) Figure 10 The area is recorded as a thick line in the text.

[0049] When placing the chip W into boxes 7a-7d, since the transport direction of the chip W is a straight line, the transport direction of the chip W by the transport robots 4a and 4b is set so that the transport direction is parallel to the center line CL described here. At the pedestal 6a, by supporting the wafer W at the portion containing the arc AR, the vicinity of the circumferential edge of the wafer W, which is supported by the support portion 7s of the boxes 7a-7d, can be adequately cooled.

[0050] exist Figure 10In the illustrated embodiment, chords ST are drawn at positions equidistant from the center line CL, but the distances of each chord ST from the center line CL can also be different. However, since the support of the wafer W by the boxes 7a-7d is symmetrical, if the separation distance of the chords ST from the center line CL is set to be equal, the temperature difference between the left and right sides of the wafer W supported by the boxes 7a-7d can be reduced.

[0051] In the above embodiment, a structure is described in which primary cooling is performed in the vacuum preparation chamber 3b and secondary cooling is performed at the pedestals 6, 6-1, 6a, and 6b. However, this structure is not limited to this one, and other structures may also be used. For example, a cooling chamber may be added adjacent to the transport chamber 20 where the transport robots 4a and 4b are located, and primary and secondary cooling may be performed in the added cooling chamber.

[0052] The ion implantation apparatus is illustrated as a wafer processing apparatus IM and IM2, but the wafer processing apparatus is not limited to an ion implantation apparatus. Any apparatus that cools the wafer after high-temperature processing in two stages and recovers it into a box can also be a film deposition apparatus, an etching apparatus, or other wafer processing apparatus.

[0053] In the above embodiment, the vacuum preparation chamber 3b is configured to also serve as the primary cooling chamber X, but the vacuum preparation chamber 3a can also serve as the primary cooling chamber X. In this case, preheating is performed in the vacuum preparation chamber 3b.

[0054] In the above embodiment, it is described that the wafer W is transported based on the measurement result of the temperature measuring device 8. However, it is also possible to determine whether the wafer W can be transported based on the elapsed time when the wafer W is placed on the pedestals 6, 6-1, 6a, 6b. However, the wafer W after high-temperature treatment is not necessarily flat and deforms within the wafer surface. Furthermore, such deformation varies slightly from wafer W to wafer W. Moreover, in most cases, the wafer supply source is different, and the types of wafers W processed by wafer processing devices IM and IM2 are not uniform.

[0055] When considering these factors when setting the elapsed time until the circumferential edge of the wafer W is reliably sufficiently cooled, there is a tendency to set the time to be longer than the necessary time. This results in a longer waiting time during secondary cooling. In this regard, in the method of determining whether the wafer W can be moved based on the measurement results of the temperature measuring device 8, the temperature of the wafer W actually being processed is measured, so the wafer W can be moved at the appropriate time, which is advantageous in shortening the waiting time in the secondary cooling.

[0056] The support portion 10 of the bases 6, 6-1, 6a, and 6b can also be made of metals with good thermal conductivity, such as aluminum or gold. On the other hand, to avoid generating particles due to friction with the back of the wafer W, carbon with high wear resistance can also be used.

[0057] In addition, a device with the same air supply function as the clean air unit described in Patent Document 1 may be added, and this device may be used during the secondary cooling of the wafer W at the pedestals 6, 6-1, 6a, and 6b.

[0058] In addition, the present invention is not limited to the described embodiments, and various modifications can be made without departing from its spirit. Explanation of reference numerals in the attached figures

[0059] 1 Processing Room 4a and 4b transport robots 6, 6a, 6b pedestal Boxes 7a, 7b, 7c, and 7d 7s support section 8. Temperature measuring device 10 Support section X Primary Cooling Chamber Y secondary cooling room W chip Wp Imaginary Circle CL centerline AR arc ST string H opening OP open end IM and IM2 chip processing devices.

Claims

1. A wafer processing apparatus, characterized in that, have: The processing chamber is used to perform high-temperature processing on wafers that are viewed from above as circular. A primary cooling chamber is used to cool the wafer removed from the processing chamber; A secondary cooling chamber is used to cool the wafer taken out from the primary cooling chamber; as well as The pedestal is configured in the secondary cooling chamber. The pedestal has a support portion that contacts a region containing a circumferential edge of an imaginary circle having the same dimensions as the wafer.

2. The wafer processing apparatus according to claim 1, characterized in that, The support portion is partially provided in the circumferential direction of the imaginary circle. The support area supported by the support portion includes arcs on the imaginary circle corresponding to two chords drawn at positions sandwiching the center line that divide the imaginary circle into two parts.

3. The wafer processing apparatus according to claim 2, characterized in that, The two strings are separated from the center line at equal distances.

4. The wafer processing apparatus according to claim 1, characterized in that, It also includes a temperature measuring device that measures the temperature at the support area of ​​the wafer supported by the pedestal.

5. The wafer processing apparatus according to claim 4, characterized in that, The temperature measuring device measures the overall temperature distribution of the support area of ​​the wafer.

6. The wafer processing apparatus according to claim 4, characterized in that, The device includes a transport apparatus for transporting the wafer from the pedestal. Based on the temperature measurement results, the wafer is then moved.

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