Method for manufacturing photoelectric composite wiring board, photoelectric composite wiring board, and semiconductor package

Abstract

A method for manufacturing a photoelectric composite wiring board, the method comprising: a step in which a plurality of layers of different materials are laminated on a substrate having a first wiring layer, and one of the plurality of layers is exposed and developed to form an optical waveguide; a step for forming a via hole in an insulating layer formed by laminating the plurality of layers; and forming a second wiring layer on the insulating layer, and forming a via conductor connecting the first wiring layer and the second wiring layer in the via.

Description

Technical Field

[0001] This disclosure relates to a method for manufacturing an optoelectronic composite wiring board, the optoelectronic composite wiring board, and semiconductor packaging. Background Technology

[0002] In recent years, the concept of co-packaged optics—which integrates optical circuit chips and the electronic circuit chips used to control them into a single package for applications such as high-speed optical communication and HPC (High Performance Computing)—has been expanding. This enables high-speed, high-capacity, low-power, and miniaturized applications.

[0003] Generally, optical circuit chips and electronic circuit chips are packaged and mounted on a substrate separately. However, from the perspectives of productivity, high-speed transmission, power saving, and miniaturization, the following approach has been taken: optical circuit chips and electronic circuit chips are configured on a redistribution layer that serves as a silicon interposer, packaged together, and mounted on a substrate (see "FOWLP and Si-Interposer for High-Speed ​​Photonic Packaging", Lim Teck Guan, Eva Wai Leong Ching, Jong Ming Ching, Loh Woon Leng, David Ho Soon Wee and Surya Bhattacharya (2021 IEEE 71st Electronic Components and Technology Conference (ECTC))). Summary of the Invention

[0004] The problem that the invention aims to solve

[0005] The subject of this disclosure is to provide a technology that can reduce the cost of semiconductor packages incorporating optical circuit chips and electronic circuit chips.

[0006] Methods for solving problems

[0007] <1>

[0008] A method for manufacturing an optoelectronic composite wiring board, comprising:

[0009] The process of stacking multiple layers of different materials on a substrate having a first wiring layer, and exposing and developing one of the multiple layers to form an optical waveguide;

[0010] The process of forming through-holes in an insulating layer formed by stacking the plurality of layers; and

[0011] The process of forming a second wiring layer on the insulating layer and forming a through-hole conductor connecting the first wiring layer and the second wiring layer in the through-hole.

[0012] <2>

[0013] according to <1> The manufacturing method of the optoelectronic composite wiring board, wherein the layer forming the optical waveguide comprises a photosensitive material and a thermosetting resin.

[0014] <3>

[0015] according to <1> or <2> The manufacturing method of the optoelectronic composite wiring board, wherein the layer forming the optical waveguide comprises a negative or positive photosensitive material and a thermosetting resin.

[0016] <4>

[0017] according to <1> ~ <3> In any one of the methods for manufacturing an optoelectronic composite wiring board, the insulating layer is formed by stacking three layers, and the layer forming the optical waveguide is located in the middle of the three layers.

[0018] <5>

[0019] according to <1> ~ <3> The method for manufacturing an optoelectronic composite wiring board according to any one of the following methods involves stacking multiple layers of different materials on the substrate, exposing and developing the topmost layer to form an optical waveguide, and stacking the other layers on the optical waveguide to form the insulating layer.

[0020] <6>

[0021] according to <1> ~ <4> In any one of the methods for manufacturing the optoelectronic composite wiring board, the plurality of layers in the insulating layer are formed by stacking them layer by layer on the substrate.

[0022] <7>

[0023] according to <1> ~ <6> In any one of the methods for manufacturing the optoelectronic composite wiring board, at least one of the multiple layers of different materials is formed of a liquid resin material.

[0024] <8>

[0025] according to <1> ~ <6> In any one of the methods for manufacturing the optoelectronic composite wiring board, at least one of the multiple layers of different materials is formed of a film-like resin material.

[0026] <9>

[0027] A method for manufacturing an optoelectronic composite wiring board, comprising:

[0028] The process of forming a first insulating layer on a substrate having a first wiring layer;

[0029] The process of forming a first through hole on the first insulating layer;

[0030] The process of forming a second wiring layer on the first insulating layer and forming a first through-hole conductor connecting the first wiring layer and the second wiring layer in the first through-hole;

[0031] The process of forming a second insulating layer on the second wiring layer with a material different from that of the first insulating layer;

[0032] The process of exposing and developing the second insulating layer to form an optical waveguide;

[0033] The process of forming a third insulating layer on the second insulating layer, the third insulating layer being made of a material different from the second insulating layer;

[0034] The process of forming a second through-hole on the third insulating layer; and

[0035] The process of forming a third wiring layer on the third insulating layer and forming a second through-hole conductor connecting the second wiring layer and the third wiring layer in the second through-hole.

[0036] <10>

[0037] according to <9> The manufacturing method of the optoelectronic composite wiring board, wherein the second insulating layer comprises a photosensitive material and a thermosetting resin.

[0038] <11>

[0039] according to <9> or <10> The manufacturing method of the optoelectronic composite wiring board, wherein the second insulating layer comprises a negative or positive photosensitive material and a thermosetting resin.

[0040] <12>

[0041] according to <9> ~ <11> In any one of the methods for manufacturing an optoelectronic composite wiring board, the first through-hole conductor and the second through-hole conductor overlap in the stacking direction of the first insulating layer and the second insulating layer.

[0042] <13>

[0043] according to <9> ~ <12> In any one of the methods for manufacturing the optoelectronic composite wiring board, at least one of the first insulating layer and the second insulating layer is formed of a liquid resin material.

[0044] <14>

[0045] according to <9> ~ <12> In any one of the methods for manufacturing the optoelectronic composite wiring board, at least one of the first insulating layer and the second insulating layer is formed of a film-like resin material.

[0046] <15>

[0047] according to <1> or <9> The method for manufacturing the optoelectronic composite wiring board includes a substrate having a first surface, a second surface opposite to the first surface, through holes opening on the first surface and the second surface respectively, and a first wiring layer formed on the first surface.

[0048] The optical waveguide is formed by exposing and developing the insulating layer disposed within the through hole.

[0049] <16>

[0050] A photoelectric composite wiring board, which is used <1> ~ <8> , <15> The manufacturing method of the optoelectronic composite wiring board described in any one of the above statements is formed.

[0051] <17>

[0052] A photoelectric composite wiring board, which is used <9> ~ <15> The manufacturing method of the optoelectronic composite wiring board described in any one of the above statements is formed.

[0053] <18>

[0054] A semiconductor package having:

[0055] <16> The aforementioned optoelectronic composite wiring board;

[0056] An optical circuit chip, which is connected to the optical waveguide of the optoelectronic composite wiring board; and

[0057] An electronic circuit chip is disposed on the second wiring layer of the optoelectronic composite wiring board.

[0058] <19>

[0059] A semiconductor package having:

[0060] <17> The aforementioned optoelectronic composite wiring board;

[0061] An optical circuit chip, which is connected to the optical waveguide of the optoelectronic composite wiring board; and

[0062] An electronic circuit chip is disposed on the third wiring layer of the optoelectronic composite wiring board.

[0063] Invention Effects

[0064] According to the technology disclosed herein, it is possible to reduce the cost of semiconductor packages incorporating optical circuit chips and electronic circuit chips. Attached Figure Description

[0065] [ Figure 1A ] Figure 1A This is a cross-sectional schematic diagram illustrating one embodiment of the semiconductor package in this disclosure.

[0066] [ Figure 1B ] Figure 1B This is a cross-sectional schematic diagram illustrating one embodiment of the semiconductor package in this disclosure.

[0067] [ Figure 2 ] Figure 2 yes Figure 1A The diagram shows a planar schematic of a semiconductor package.

[0068] [ Figure 3 ] Figure 3 yes Figure 1A A plan view of a modified example of a semiconductor package.

[0069] [ Figure 4 ] Figure 4 This is a cross-sectional schematic diagram illustrating another embodiment of the semiconductor package in this disclosure.

[0070] [ Figure 5 ] Figure 5 yes Figure 4 The diagram shows a planar schematic of a semiconductor package.

[0071] [ Figure 6 ] Figure 6 yes Figure 4 A plan view of a modified example of a semiconductor package.

[0072] [ Figure 7 ] Figure 7 This is a cross-sectional schematic diagram illustrating another embodiment of the semiconductor package in this disclosure.

[0073] [ Figure 8 ] Figure 8 yes Figure 7 The diagram shows a planar schematic of a semiconductor package.

[0074] [ Figure 9 ] Figure 9 This is a cross-sectional schematic diagram illustrating another embodiment of the semiconductor package in this disclosure.

[0075] [ Figure 10 ] Figure 10 This is a cross-sectional schematic diagram illustrating another embodiment of the semiconductor package in this disclosure.

[0076] [ Figure 11 ] Figure 11 yes Figure 10 The diagram shows a planar schematic of a semiconductor package.

[0077] [ Figure 12 ] Figure 12 This is a cross-sectional schematic diagram illustrating another embodiment of the semiconductor package in this disclosure.

[0078] [ Figure 13 ] Figure 13 This is a cross-sectional schematic diagram illustrating another embodiment of the semiconductor package in this disclosure.

[0079] [ Figure 14 ] Figure 14 This is a perspective view of the optical input section of the optical circuit chip used in the semiconductor package shown in Figure 1.

[0080] [ Figure 15 ] Figure 15 This is a perspective view showing a modified example of the optical input section of an optical circuit chip used in the semiconductor package shown in Figure 1.

[0081] [ Figure 16A ] Figure 16A This is a cross-sectional schematic diagram of a first reference example used to illustrate the manufacturing method of an optoelectronic composite wiring board.

[0082] [ Figure 16B ] Figure 16B This is a cross-sectional schematic diagram of a first reference example used to illustrate the manufacturing method of an optoelectronic composite wiring board.

[0083] [ Figure 16C ] Figure 16C This is a cross-sectional schematic diagram of a first reference example used to illustrate the manufacturing method of an optoelectronic composite wiring board.

[0084] [ Figure 16D ] Figure 16D This is a cross-sectional schematic diagram of a first reference example used to illustrate the manufacturing method of an optoelectronic composite wiring board.

[0085] [ Figure 16E ] Figure 16E This is a cross-sectional schematic diagram of a first reference example used to illustrate the manufacturing method of an optoelectronic composite wiring board.

[0086] [ Figure 16F ] Figure 16F This is a cross-sectional schematic diagram of a first reference example used to illustrate the manufacturing method of an optoelectronic composite wiring board.

[0087] [ Figure 16G ] Figure 16G This is a cross-sectional schematic diagram of a first reference example used to illustrate the manufacturing method of an optoelectronic composite wiring board.

[0088] [ Figure 16H ] Figure 16HThis is a cross-sectional schematic diagram of a first reference example used to illustrate the manufacturing method of an optoelectronic composite wiring board.

[0089] [ Figure 16I ] Figure 16I This is a cross-sectional schematic diagram of a first reference example used to illustrate the manufacturing method of an optoelectronic composite wiring board.

[0090] [ Figure 17 ] Figure 17 This is a front view used to illustrate the materials used in the manufacturing method of optoelectronic composite wiring boards.

[0091] [ Figure 18 ] Figure 18 This is a cross-sectional schematic diagram illustrating the laminated film used in the manufacturing method of optoelectronic composite wiring board.

[0092] [ Figure 19 ] Figure 19 This is a cross-sectional schematic diagram illustrating the laminated film used in the manufacturing method of optoelectronic composite wiring board.

[0093] [ Figure 20 ] Figure 20 This is a cross-sectional schematic diagram illustrating the laminated film used in the manufacturing method of optoelectronic composite wiring board.

[0094] [ Figure 21A ] Figure 21A This is a cross-sectional schematic diagram of a second reference example used to illustrate the manufacturing method of an optoelectronic composite wiring board.

[0095] [ Figure 21B ] Figure 21B This is a cross-sectional schematic diagram of a second reference example used to illustrate the manufacturing method of an optoelectronic composite wiring board.

[0096] [ Figure 21C ] Figure 21C This is a cross-sectional schematic diagram of a second reference example used to illustrate the manufacturing method of an optoelectronic composite wiring board.

[0097] [ Figure 21D ] Figure 21D This is a cross-sectional schematic diagram of a second reference example used to illustrate the manufacturing method of an optoelectronic composite wiring board.

[0098] [ Figure 21E ] Figure 21E This is a cross-sectional schematic diagram of a second reference example used to illustrate the manufacturing method of an optoelectronic composite wiring board.

[0099] [ Figure 21F ] Figure 21F This is a cross-sectional schematic diagram of a second reference example used to illustrate the manufacturing method of an optoelectronic composite wiring board.

[0100] [ Figure 21G ] Figure 21G This is a cross-sectional schematic diagram of a second reference example used to illustrate the manufacturing method of an optoelectronic composite wiring board.

[0101] [ Figure 21H ] Figure 21H This is a cross-sectional schematic diagram of a second reference example used to illustrate the manufacturing method of an optoelectronic composite wiring board.

[0102] [ Figure 21I ] Figure 21I This is a cross-sectional schematic diagram of a second reference example used to illustrate the manufacturing method of an optoelectronic composite wiring board.

[0103] [ Figure 21J ] Figure 21J This is a cross-sectional schematic diagram of a second reference example used to illustrate the manufacturing method of an optoelectronic composite wiring board.

[0104] [ Figure 21K ] Figure 21K This is a cross-sectional schematic diagram of a second reference example used to illustrate the manufacturing method of an optoelectronic composite wiring board.

[0105] [ Figure 22A ] Figure 22A This is a cross-sectional schematic diagram illustrating one embodiment of a method for manufacturing an optoelectronic composite wiring board.

[0106] [ Figure 22B ] Figure 22B This is a cross-sectional schematic diagram illustrating one embodiment of a method for manufacturing an optoelectronic composite wiring board.

[0107] [ Figure 22C ] Figure 22C This is a cross-sectional schematic diagram illustrating one embodiment of a method for manufacturing an optoelectronic composite wiring board.

[0108] [ Figure 22D ] Figure 22D This is a cross-sectional schematic diagram illustrating one embodiment of a method for manufacturing an optoelectronic composite wiring board.

[0109] [ Figure 22E ] Figure 22E This is a cross-sectional schematic diagram illustrating one embodiment of a method for manufacturing an optoelectronic composite wiring board.

[0110] [ Figure 22F ] Figure 22F This is a cross-sectional schematic diagram illustrating one embodiment of a method for manufacturing an optoelectronic composite wiring board.

[0111] [ Figure 22G ] Figure 22G This is a cross-sectional schematic diagram illustrating one embodiment of a method for manufacturing an optoelectronic composite wiring board.

[0112] [ Figure 23A ] Figure 23A This is a cross-sectional schematic diagram illustrating one embodiment of a method for manufacturing an optoelectronic composite wiring board.

[0113] [ Figure 23B ] Figure 23B This is a cross-sectional schematic diagram illustrating one embodiment of a method for manufacturing an optoelectronic composite wiring board.

[0114] [ Figure 23C ] Figure 23C This is a cross-sectional schematic diagram illustrating one embodiment of a method for manufacturing an optoelectronic composite wiring board.

[0115] [ Figure 23D ] Figure 23D This is a cross-sectional schematic diagram illustrating one embodiment of a method for manufacturing an optoelectronic composite wiring board.

[0116] [ Figure 23E ] Figure 23E This is a cross-sectional schematic diagram illustrating one embodiment of a method for manufacturing an optoelectronic composite wiring board.

[0117] [ Figure 23F ] Figure 23F This is a cross-sectional schematic diagram illustrating one embodiment of a method for manufacturing an optoelectronic composite wiring board.

[0118] [ Figure 23G ] Figure 23G This is a cross-sectional schematic diagram illustrating one embodiment of a method for manufacturing an optoelectronic composite wiring board.

[0119] [ Figure 23H ] Figure 23H This is a cross-sectional schematic diagram illustrating one embodiment of a method for manufacturing an optoelectronic composite wiring board.

[0120] [ Figure 23I ] Figure 23I This is a cross-sectional schematic diagram illustrating one embodiment of a method for manufacturing an optoelectronic composite wiring board. Detailed Implementation

[0121] The following describes in detail the methods for implementing this disclosure. However, this disclosure is not limited to the following embodiments. In the following embodiments, the constituent elements (including element steps, etc.) are not essential unless specifically stated otherwise. Similarly, numerical values ​​and their ranges are not intended to limit this disclosure.

[0122] In this disclosure, the term "process" includes not only processes that are independent of other processes, but also processes that can be clearly distinguished from other processes, as long as the purpose of the process can be achieved.

[0123] In this disclosure, within the numerical range represented by "~", the values ​​recorded before and after "~" are respectively the minimum and maximum values.

[0124] In the numerical ranges described in this disclosure, the upper or lower limit of one numerical range can be replaced by the upper or lower limit of another numerical range described in other stages. Furthermore, the upper or lower limit of the numerical range described in this disclosure can also be replaced by the values ​​shown in the embodiments.

[0125] In this disclosure, each component may comprise multiple corresponding substances. In the presence of multiple substances equivalent to each component in the composition, unless otherwise specified, the content or percentage of each component refers to the total content or percentage of the multiple substances present in the composition.

[0126] In this disclosure, the term "layer" includes not only the case where it is formed in the whole of the region where the layer exists, but also the case where it is formed only in a part of the region.

[0127] In this disclosure, embodiments are described with reference to the accompanying drawings, but the configuration of these embodiments is not limited to the configuration shown in the drawings. Furthermore, the sizes of the components in the figures are conceptual, and the relative sizes of the components are not limited thereto.

[0128] [Semiconductor Packaging 20]

[0129] Figure 1A This is a cross-sectional schematic diagram illustrating one embodiment of the semiconductor package of this disclosure.

[0130] The semiconductor package 20 disclosed herein includes an optoelectronic composite wiring board 30, an optical circuit chip 50, and an electronic circuit chip 60.

[0131] (Optical composite wiring board 30)

[0132] like Figure 1A and Figure 1B As shown, the optoelectronic composite wiring board 30 has a resin layer, optical wiring, and electrical wiring. Specifically, the optoelectronic composite wiring board 30 has a substrate 32, an insulating layer 34, an optical waveguide 36 as optical wiring, a wiring layer 38 as electrical wiring, and a through-hole conductor 78 (see reference). Figure 1B ).

[0133] The substrate 32 has a wiring layer 33 as an electrical wiring layer (see reference). Figure 1BIn this embodiment, as an example, a wiring layer 33 is provided on the surface of the substrate 32. The substrate 32 may be an inorganic substrate such as glass or ceramic, an organic substrate such as a copper-clad laminate, or a composite substrate on which prepreg, laminated film, or rewiring resin material is laminated.

[0134] The insulating layer 34 is made of resin material and is disposed on the substrate 32. Specifically, as... Figure 1B As shown, the insulating layer 34 is disposed on the substrate 32 and the wiring layer 33. As an example, the insulating layer 34 in this embodiment is composed of three layers. This insulating layer 34 is mainly composed of a first layer 70 disposed on the substrate 32, a second layer 72 disposed on the first layer 70, and a third layer 74 disposed on the second layer 72. It should be noted that the number of layers constituting the insulating layer 34 is not limited to the above.

[0135] Optical waveguide 36 is the path for guiding optical signals, such as... Figure 1A and Figure 1B As shown, it is disposed inside the insulating layer 34. As an example, the optical waveguide 36 in this embodiment is formed by a portion of the second layer 72. Furthermore, a light guiding portion 42 is provided at the end of the optical waveguide 36. This light guiding portion 42 has a guiding body 42A and a reflector 42B. Light emitted from the end of the optical waveguide 36 is reflected by the reflector 42B and travels through the guiding body 42A to the optical circuit chip 50. It should be noted that the light guiding portion 42 is disposed within the insulating layer 34.

[0136] The wiring layer 38 is disposed inside the insulating layer 34 or on the surface of the insulating layer 34. For example... Figure 1B As shown, in this embodiment, the wiring layer 38 is disposed on the surface of the insulating layer 34.

[0137] It should be noted that when there are multiple wiring layers 38, the wiring layers 38 can also be disposed separately inside the insulating layer 34 and on the surface of the insulating layer 34. Furthermore, each wiring layer can contain one or more metals. Examples of metals constituting each wiring layer include copper, silver, gold, and aluminum. It should be noted that the metals constituting each wiring layer are not limited to the aforementioned metals.

[0138] Through-hole conductor 40 electrically connects wiring layer 33 and wiring layer 38. It should be noted that if there are multiple wiring layers 38, other through-hole conductors can also be used to electrically connect adjacent wiring layers 38 in the stacking direction. Furthermore, the metal constituting the through-hole conductor can be the same metal constituting the wiring layer 38.

[0139] (Optical circuit chip 50)

[0140] The optical circuit chip 50 is disposed on the optoelectronic composite wiring board 30. Furthermore, the optical circuit chip 50 is connected to the optical waveguide 36. Specifically, the optical circuit chip 50 is connected to the optical waveguide 36 via the light guiding portion 42. It should be noted that the optical circuit chip 50 has a light inlet 52 on the insulating layer 34 side (see reference). Figure 14 The light guide section 42 is connected to the light inlet 52. Multiple light inlets 52 are spaced apart on the optical circuit chip 50. Furthermore, the shape of the light inlet 52 is not limited as long as it can guide light; it can be any shape. Figure 14 The circular opening shown can also be Figure 15 The cone shape shown.

[0141] In addition, the optical circuit chip 50 is connected to the wiring layer of the optical circuit chip 50 in the insulating layer 34 via the chip electrode 54.

[0142] (Electronic circuit chip 60)

[0143] The electronic circuit chip 60 is disposed on the wiring layer 38. It should be noted that... Figure 1A The wiring layer 38 is omitted from the diagram. The electronic circuit chip 60 is connected to the wiring layer 38 via chip electrodes 62.

[0144] Figure 2 yes Figure 1A The diagram shows a planar schematic of a semiconductor package. Figure 2 In this example, an electronic circuit chip 60 is disposed in the center of the optoelectronic composite wiring board 30, and multiple optical circuit chips 50 are arranged to surround the electronic circuit chip 60. Multiple optical waveguides 36 extending from optical connectors 44 disposed at the periphery of the optoelectronic composite wiring board 30 are connected to these optical circuit chips 50. It should be noted that... Figure 2 In the example, optical connectors 44 are respectively provided on the four sides of the optoelectronic composite wiring board 30, but this disclosure is not limited to this configuration. For example, it can also be as follows: Figure 6 As shown in the example, a set of optical connectors 44 are provided on each of the two opposite sides of the optoelectronic composite wiring board 30.

[0145] In semiconductor package 20, optical circuit chip 50 and electronic circuit chip 60 are disposed on optoelectronic composite wiring board 30 without using silicon interposer as relay material. Therefore, the cost of semiconductor package 20 is reduced compared to a configuration using silicon interposer.

[0146] In the aforementioned semiconductor package 20, such as Figure 1A As shown, the optical waveguide 36 is connected to the optical circuit chip 50 via the optical guide section 42, but this disclosure is not limited to this configuration. Figure 4As shown in the semiconductor package 21, the optical input port 52 can also be directly connected to the portion constituting the optical waveguide 36. It should be noted that the semiconductor package 21 can be like... Figure 5 The electronic circuit chip 60, optical circuit chip 50, and optical connector 44 can be configured as shown in the example. Figure 6 The example shown configures the electronic circuit chip 60, the optical circuit chip 50, and the optical connector 44 as shown.

[0147] In addition, in the aforementioned semiconductor package 20, such as Figure 1A As shown, an optical circuit chip 50 is disposed on the optoelectronic composite wiring board 30, but the present invention is not limited to this configuration. Alternatively, as shown... Figure 7 As shown in the semiconductor package 22, an optical circuit chip 50 is embedded in the insulating layer 34 constituting the optoelectronic composite wiring board 30. Furthermore, a reflector 42B can be disposed at the end of the optical waveguide 36 to reflect light towards the light inlet 52 of the embedded optical circuit chip 50. It should be noted that the semiconductor package 22 can also be... Figure 8 The electronic circuit chip 60, optical circuit chip 50, and optical connector 44 are configured as shown in the example. Furthermore, they can also be configured as follows... Figure 9 As shown in the semiconductor package 23, the optical waveguide 36 is directly connected to the portion constituting the optical inlet 52.

[0148] Furthermore, in the aforementioned semiconductor package 22, an optical circuit chip 50 is embedded in the insulating layer 34 constituting the optoelectronic composite wiring board 30, but this disclosure is not limited to this configuration. Alternatively, as... Figure 10 As shown in the semiconductor package 24, an optical circuit chip 50 is embedded in the substrate 32 constituting the optoelectronic composite wiring board 30. Furthermore, a reflector 42B can be disposed at the end of the optical waveguide 36 to reflect light towards the light inlet 52 of the embedded optical circuit chip 50. It should be noted that the semiconductor package 24 can also be configured as follows: Figure 11 The electronic circuit chip 60, optical circuit chip 50, and optical connector 44 are configured as shown in the example. Furthermore, it can also be configured as follows... Figure 12 As shown in the semiconductor package 25, the optical waveguide 36 is directly connected to the portion constituting the optical inlet 52.

[0149] Furthermore, in the aforementioned semiconductor package 22, an optical circuit chip 50 and an electronic circuit chip 60 are disposed on the insulating layer 34 of the optoelectronic composite wiring board 30, but this disclosure is not limited to this configuration. Alternatively, as... Figure 13As shown in the semiconductor package 26, an optical circuit chip 50 and an electronic circuit chip 60 are disposed on the side of the substrate 32 opposite to the insulating layer 34. In this case, a through-hole 32A is provided on the substrate 32, through which an optical waveguide 36 passes, and the optical circuit chip 50 is disposed such that a light inlet 52 is disposed at the end of the optical waveguide 36. Thus, the optical waveguide 36 is connected to the optical circuit chip 50.

[0150] Next, the manufacturing method of the optoelectronic composite wiring board 30 will be described.

[0151] Figures 16A to 16I These are cross-sectional schematic diagrams of a first reference example used to illustrate the manufacturing method of the optoelectronic composite wiring board 30.

[0152] like Figure 16A As shown, an insulating layer 34 having multiple layers of different materials is formed on a substrate 32 having a wiring layer 33. It should be noted that in this embodiment, a first layer 70 (cladding layer) is disposed on the substrate 32, a second layer 72 (core layer) is disposed on the first layer 70, and a third layer 74 (cladding layer) is disposed on the second layer 72. Furthermore, the second layer 72 contains a material whose refractive index is modulated by exposure. Specifically, the second layer 72 is a photosensitive layer containing a material whose refractive index increases upon exposure to light with wavelengths of 10 nm to 450 nm, including ultraviolet light. Additionally, at least one layer constituting the insulating layer 34 may also contain a thermosetting resin. It should be noted that in this embodiment, each layer constituting the insulating layer 34 (first layer 70, second layer 72, and third layer 74) contains a thermosetting resin.

[0153] The photosensitive resin composition constituting the second layer 72 is not particularly limited, and conventionally known photosensitive resin compositions can be used. Specifically, materials that induce photodimerization and materials that induce photoremoval reactions based on light exposure can be used. Examples of materials that induce photodimerization include nitrone derivatives, norbornene derivatives, polyvinyl cinnamate, and maleimide compounds, which contain C=C (unsaturated double bonds) or maleimide, indole, cinnamate, succinate, or cinnamoyl groups as functional groups inducing photodimerization. Examples of materials that induce photoremoval reactions based on light exposure include α-diazoketone compounds and azide compounds having azide groups as functional groups that induce nitrogen removal by light exposure. By including at least one of these materials, the function of modulating the refractive index through exposure is achieved. Therefore, as long as at least one of them is included, alkali-soluble resins with phenolic hydroxyl groups, acrylic resins, epoxy resins, polyimide resins, polyamide-imide resins, polybenzoxazole resins, etc., can be appropriately selected.

[0154] It should be noted that the insulating layer 34 can also be formed by stacking the layers constituting the insulating layer 34 one by one on the substrate 32. For example, as Figure 17 As shown, the first layer 70 and the third layer 74 can also be formed using liquid resin material L1 (varnish), and the second layer 72 can be formed using liquid resin material L2 (varnish). In this case, liquid resin material L1 is coated onto the substrate 32, and after the resin material L1 cures, resin material L2 is coated onto the resin material L1, and after the resin material L2 cures, resin material L1 is coated onto the resin material L2, thereby forming the insulating layer 34.

[0155] On the other hand, such as Figure 18 As shown, the first layer 70 and the third layer 74 can also be formed using a film-like resin material F1, and the second layer 72 can be formed using a film-like resin material F2. In this case, the film-like resin material F1 is disposed on the substrate 32, then the resin material F2 is disposed on the resin material F1, and then the resin material F1 is disposed on the resin material F2, thereby forming the insulating layer 34. It should be noted that a film-like protective material P can also be provided on both sides of the resin material F1. In addition, a protective material P can also be provided on both sides of the resin material F2. Furthermore, when protective materials P are provided on both sides of the film-like resin material, the materials of the respective protective materials P can be different. Specifically, one protective material P can be used to support the film-like resin material, and the other protective material P can be used to protect the surface of the film-like resin material.

[0156] It should be noted that the film-like resin material can be formed by coating the protective material P with liquid resin material, or other protective materials P can be placed on the coated resin material.

[0157] In addition, such as Figure 19 As shown, a laminated film SF1 can also be used, in which film-like resin materials F1 and F2 forming the second layer 72 and the third layer 74 are stacked. In this case, the amount of protective material P can be reduced, thus easily reducing costs. In addition, manufacturing efficiency is improved compared to the case of layer-by-layer lamination on the substrate 32.

[0158] Furthermore, such as Figure 20 As shown, a laminated film SF2, in which film-like resin materials F1, F2, and F1 are respectively stacked to form the first layer 70, the second layer 72, and the third layer 74, can also be used. In this case, the amount of protective material P can be further reduced, thus easily reducing costs. In addition, manufacturing efficiency is improved compared to the case of layer-by-layer lamination on the substrate 32.

[0159] Next, as Figure 16BAs shown, a mask material M1 is disposed on the insulating layer 34. Then, the insulating layer 34 is exposed. Through exposure, as... Figure 16C As shown, the second layer 72 constituting the insulating layer 34 is exposed to form the optical waveguide 36. It should be noted that the portion of the second layer 72 that is not exposed due to the mask material M1 becomes the optical waveguide 36. After the exposure of the insulating layer 34 is completed, the mask material M1 is removed from the insulating layer 34.

[0160] Next, as Figure 16D As shown, a through-hole 76 is formed in the insulating layer 34. This through-hole 76 is a continuous through-hole penetrating the first layer 70, the second layer 72, and the third layer 74. It should be noted that the through-hole 76 can be formed, for example, by drilling, by laser irradiation, or by exposure and development.

[0161] Next, a wiring layer 38 is formed on the insulating layer 34, and a via conductor 78 connecting the wiring layer 33 and the wiring layer 38 is formed within the via 76. To form the via conductor 78, firstly, as... Figure 16E As shown, a seed layer 78A is disposed on the insulating layer 34, i.e., the third layer 74 (the surface of the third layer 74), and on the inner surface of the through-hole 76. Next, as... Figure 16F As shown, resist material R1 is disposed on seed layer 78A. Then, as... Figure 16G As shown, an electroplated layer 78B is disposed on the seed layer 78A. Then, as... Figure 16H As shown, the resist material R1 is removed from the seed layer 78A. Then, the portion of the seed layer 78A not covered by the electroplated layer 78B is removed. This forms the through-hole conductor 78 and the wiring layer 38. It should be noted that the portion inside the through-hole constitutes the through-hole conductor 78, and the portion on the third layer 74 constitutes the wiring layer 33.

[0162] As described above, an optoelectronic composite wiring board 30 having optical wiring and electrical wiring is manufactured.

[0163] It should be noted that in the above manufacturing method, the second layer 72 is a photosensitive layer containing a material whose refractive index increases upon exposure to light with wavelengths of 10 nm to 450 nm containing ultraviolet light, but this disclosure is not limited to this configuration. For example, the second layer 72 may also be a photosensitive layer containing a material whose refractive index decreases upon exposure to light with wavelengths of 10 nm to 450 nm containing ultraviolet light.

[0164] Next, the manufacturing method of the optoelectronic composite wiring board 130, which is a second reference example of the manufacturing method of optoelectronic composite wiring board, will be described.

[0165] Figures 21A to 21K These are cross-sectional schematic diagrams illustrating one embodiment of the manufacturing method of the optoelectronic composite wiring board 130. It should be noted that, as... Figure 21K As shown, the optoelectronic composite wiring board 130 has a first layer 170 (cladding layer) disposed on a substrate 32 having a wiring layer 33, a second layer 172 (core layer) disposed on the first layer 170, and a third layer 174 (cladding layer) disposed on the second layer 172. An insulating layer is formed on the substrate 32 through these first layers 170, second layers 172, and third layers 174. The second layer 172 is made of the same resin material as the second layer 72.

[0166] like Figure 21A As shown, a first layer 170 is formed on a substrate 32 having a wiring layer 33. It should be noted that the first layer 170 can be formed using either a liquid resin material L1 or a film-like resin material F1.

[0167] Next, as Figure 21B As shown, a through hole 176 is formed in the first layer 170. This through hole 176 is a through hole that penetrates the first layer 170. It should be noted that the through hole 176 can be formed, for example, by drilling, by laser irradiation, or by exposure and development.

[0168] Next, as Figure 21C As shown, a wiring layer 190 is formed on the first layer 170, and a via conductor 180 connecting the wiring layer 33 and the wiring layer 190 is formed within the via 76. It should be noted that the methods for forming the wiring layer 190 and the via conductor 180 are the same as those for forming the via conductor 78 and the wiring layer 38, therefore, the description is omitted. Furthermore, the portion within the via 76 constitutes the via conductor 180, and the portion on the first layer 170 constitutes the wiring layer 190.

[0169] Next, as Figure 21D As shown, a second layer 172 is formed on the first layer 170 and the wiring layer 190. It should be noted that the second layer 172 can be formed using either liquid resin material L2 or film-like resin material F2.

[0170] Next, as Figure 21E As shown, mask material M1 is disposed on the second layer 172. Then, the second layer 172 is exposed. Through exposure, as... Figure 21F As shown, the second layer 172 is exposed to form the optical waveguide 136. It should be noted that the portion of the second layer 172 that is not exposed due to the mask material M1 becomes the optical waveguide 136. After the exposure of the second layer 172 is completed, the mask material M1 is removed from the second layer 172.

[0171] Next, as Figure 21GAs shown, a through hole 177 is formed in the second layer 172. This through hole 177 is a through hole that penetrates the second layer 172. It should be noted that the through hole 177 can be formed, for example, by a drill bit or by laser irradiation.

[0172] Next, as Figure 21H As shown, a wiring layer 192 is formed on the second layer 172, and a via conductor 182 connecting the wiring layer 190 and the wiring layer 192 is formed within a via 177. It should be noted that the methods for forming the wiring layer 192 and the via conductor 182 are the same as those for forming the via conductor 78 and the wiring layer 38, therefore, descriptions are omitted. Furthermore, the portion within the via 177 constitutes the via conductor 182, and the portion on the second layer 172 constitutes the wiring layer 192.

[0173] Next, as Figure 21I As shown, a third layer 174 is formed on the second layer 172 and the wiring layer 192. It should be noted that the third layer 174 can be formed using liquid resin material L1 or film-like resin material F1.

[0174] Next, as Figure 21J As shown, a through hole 178 is formed in the third layer 174. This through hole 178 is a through hole that penetrates the third layer 174. It should be noted that the through hole 178 can be formed, for example, by drilling, by laser irradiation, or by exposure and development.

[0175] Next, as Figure 21K As shown, a wiring layer 194 is formed on the third layer 174, and a via conductor 184 connecting the wiring layer 192 and the wiring layer 194 is formed within the via 178. It should be noted that the methods for forming the wiring layer 194 and the via conductor 184 are the same as those for forming the via conductor 78 and the wiring layer 38, therefore, the description is omitted. Furthermore, the portion within the via 178 constitutes the via conductor 184, and the portion on the third layer 174 constitutes the wiring layer 194.

[0176] As described above, an optoelectronic composite wiring board 130 having optical wiring and electrical wiring is manufactured.

[0177] It should be noted that in the above manufacturing method, the second layer 172 is a photosensitive layer containing a material whose refractive index increases upon exposure to light with wavelengths of 10 nm to 450 nm containing ultraviolet light, but this disclosure is not limited to this configuration. For example, the second layer 172 may also be a photosensitive layer containing a material whose refractive index decreases upon exposure to light with wavelengths of 10 nm to 450 nm containing ultraviolet light.

[0178] Furthermore, in the optoelectronic composite wiring board 130, the through-hole conductors 180, 182, and 184 overlap in the stacking direction, but this disclosure is not limited to this configuration. They can also be non-overlapping or partially overlapping.

[0179] Next, the manufacturing method of the optoelectronic composite wiring board 230, which is one embodiment of the manufacturing method of the optoelectronic composite wiring board (first embodiment), will be described.

[0180] Figures 22A to 22G These are cross-sectional schematic diagrams illustrating one embodiment of the manufacturing method of the optoelectronic composite wiring board 230. It should be noted that, as... Figure 22G As shown, the optoelectronic composite wiring board 230 has a first layer 270 (cladding layer) disposed on a substrate 32 having a wiring layer 33, a resin layer 274 (cladding layer) disposed on the first layer 270, and an optical waveguide 236 disposed on the first layer 270 and within the resin layer 274. An insulating layer is formed on the substrate 32 through these first layer 270, resin layer 274, and optical waveguide 236. The second layer 272 contains a negative or positive photosensitive material and a thermosetting resin.

[0181] The photosensitive resin composition constituting the second layer 272 is not particularly limited, and conventionally known photosensitive resin compositions can be appropriately selected. Specifically, alkali-soluble resins, acrylic resins, epoxy resins, polyimide resins, polyamide-imide resins, polybenzoxazole resins, etc., containing phenolic hydroxyl groups, carboxyl groups, etc., can be appropriately selected. The photosensitive resin composition can be positive or negative. It should be noted that by combining a monomer or polymer containing photopolymerizable functional groups with a photopolymerization initiator, a negative development is achieved. Conversely, by combining it with a dissolution inhibitor that becomes alkali-soluble under light irradiation, a positive development is achieved.

[0182] like Figure 22A As shown, a first layer 270 is formed on a substrate 32 having a wiring layer 33. It should be noted that the first layer 270 can be formed using either a liquid resin material L1 or a film-like resin material F1.

[0183] Next, as Figure 22B As shown, a second layer 272 is formed on the first layer 270. It should be noted that the second layer 272 can be formed using either liquid resin material L2 or film-like resin material F2.

[0184] Next, as Figure 22C As shown, a mask material M1 is disposed on the second layer 272. Then, the second layer 272 is exposed. Afterwards, the mask material M1 is removed from the second layer 272, as shown. Figure 22DAs shown, the second layer 272 is developed. That is, the unexposed portions of the second layer 272 are removed. Here, the exposed portions of the second layer 272 become the optical waveguide 236.

[0185] Next, as Figure 22E As shown, a resin layer 274 is formed on the first layer 270 and the optical waveguide 236. It should be noted that the resin layer 274 can be formed using liquid resin material L1 or film-like resin material F1.

[0186] Next, as Figure 22F As shown, a through-hole 276 is formed between the first layer 270 and the resin layer 274. This through-hole 276 is a through-hole that penetrates both the first layer 270 and the resin layer 274. It should be noted that the through-hole 276 can be formed, for example, by drilling, by laser irradiation, or by exposure and development.

[0187] Next, as Figure 22G As shown, a wiring layer 290 is formed on the resin layer 274, and a via conductor 280 connecting the wiring layer 33 and the wiring layer 290 is formed within the via 276. It should be noted that the methods for forming the wiring layer 290 and the via conductor 280 are the same as those for forming the via conductor 78 and the wiring layer 38, therefore, descriptions are omitted. Furthermore, the portion within the via 276 constitutes the via conductor 280, and the portion on the resin layer 274 constitutes the wiring layer 190.

[0188] As described above, an optoelectronic composite wiring board 230 having optical wiring and electrical wiring is manufactured.

[0189] It should be noted that in the above manufacturing method, the unexposed part of the second layer 272 is removed, but the composition of the mask material M1 can also be changed to remove the exposed part of the second layer 272 and use the unexposed part as the optical waveguide 236.

[0190] Next, the manufacturing method of the optoelectronic composite wiring board 330, which is another embodiment (second embodiment) of the manufacturing method of the optoelectronic composite wiring board 30, will be described.

[0191] Figures 23A to 23I These are cross-sectional schematic diagrams illustrating one embodiment of the manufacturing method of the optoelectronic composite wiring board 330. It should be noted that, as... Figure 23IAs shown, the optoelectronic composite wiring board 330 has a first layer 370 (cladding layer) disposed on a substrate 32 having a wiring layer 33, a resin layer 374 (cladding layer) disposed on the first layer 370, and an optical waveguide 336 disposed on the first layer 370 and within the resin layer 374. An insulating layer is formed on the substrate 32 through these first layer 370, resin layer 374, and optical waveguide 336. The second layer 372 is made of the same material as the second layer 272.

[0192] like Figure 23A As shown, a first layer 370 is formed on a substrate 32 having a wiring layer 33. It should be noted that the first layer 370 can be formed using either a liquid resin material L1 or a film-like resin material F1.

[0193] Next, as Figure 23B As shown, a through hole 376 is formed in the first layer 370. This through hole 376 is a through hole that penetrates the first layer 370. It should be noted that the through hole 376 can be formed, for example, by drilling, by laser irradiation, or by exposure and development.

[0194] Next, as Figure 23C As shown, a wiring layer 390 is formed on the first layer 370, and a via conductor 380 connecting the wiring layer 33 and the wiring layer 390 is formed within a via 376. It should be noted that the methods for forming the wiring layer 390 and the via conductor 380 are the same as those for forming the via conductor 78 and the wiring layer 38, therefore, the description is omitted. Furthermore, the portion within the via 376 constitutes the via conductor 380, and the portion on the first layer 370 constitutes the wiring layer 390.

[0195] Next, as Figure 23D As shown, a second layer 372 is formed on the first layer 370 and the wiring layer 390. It should be noted that the second layer 372 can be formed using either liquid resin material L2 or film-like resin material F2.

[0196] Next, as Figure 23E As shown, mask material M1 is disposed on the second layer 372. Then, the second layer 372 is exposed. Then, the mask material M1 is removed from the second layer 372, as shown. Figure 23F As shown, the second layer 372 is developed. That is, the unexposed portions of the second layer 372 are removed. Here, the exposed portions of the second layer 372 become the optical waveguide 336.

[0197] Next, as Figure 23G As shown, a resin layer 374 is formed on the first layer 370 and the optical waveguide 336. It should be noted that the resin layer 374 can be formed using liquid resin material L1 or film-like resin material F1.

[0198] Next, as Figure 23H As shown, a through-hole 377 is formed between the first layer 370 and the resin layer 374. This through-hole 377 is a through-hole that penetrates both the first layer 370 and the resin layer 374. It should be noted that the through-hole 377 can be formed, for example, by drilling, by laser irradiation, or by exposure and development.

[0199] Next, as Figure 23I As shown, a wiring layer 392 is formed on the resin layer 374, and a via conductor 382 connecting the wiring layer 33 and the wiring layer 392 is formed within the via 377. It should be noted that the methods for forming the wiring layer 392 and the via conductor 380 are the same as those for forming the via conductor 78 and the wiring layer 38, therefore, descriptions are omitted. Furthermore, the portion within the via 377 constitutes the via conductor 382, ​​and the portion on the resin layer 374 constitutes the wiring layer 392.

[0200] As described above, an optoelectronic composite wiring board 330 with optical wiring and electrical wiring is manufactured.

[0201] It should be noted that in the above manufacturing method, the unexposed part of the second layer 372 is removed, but the composition of the mask material M1 can also be changed to remove the exposed part of the second layer 372 and use the unexposed part as the optical waveguide 336.

[0202] In the manufacturing methods of the aforementioned optoelectronic composite wiring board 330 and 230, an optical waveguide is formed by exposing and developing the core layer. When the core layer is exposed and developed in this way, for example, compared to reducing the exposure range of the core layer and modulating the refractive index by adjusting the exposure amount, the optical waveguide can be formed by exposing and developing both the core layer and the cladding layer resin materials. Therefore, when using exposure and development, the configuration of the manufacturing apparatus becomes simpler compared to adjusting the exposure amount to modulate the refractive index.

[0203] Next, the laminated film will be explained. For example... Figure 19As shown, the laminated film SF2 has a laminate (insulating layer) and protective materials P respectively disposed on both sides of the laminate to protect the two sides. The laminate (insulating layer) has a first resin layer and a second resin layer. The first resin layer contains a substance whose refractive index is modulated by light irradiation. The second resin layer is formed on both sides of the first resin layer and has a different refractive index than the first resin layer. The first resin layer contains a thermosetting resin. The substance contained in the first resin layer can be a substance whose refractive index increases or decreases by light irradiation. Alternatively, the second resin layer can also contain a thermosetting resin. One of the two protective materials P can be used as a support film, and the other as a protective film. Here, there are no particular limitations on the supporting film, and examples include polyesters such as polyethylene terephthalate, polybutylene terephthalate, and polyethylene naphthalate; polyolefins such as polyethylene and polypropylene; polycarbonate, polyamide, polyimide, polyamide-imide, polyetherimide, polyether sulfide, polyethersulfone, polyetherketone, polyphenylene ether, polyphenylene sulfide, polyarylate, polysulfone, and liquid crystal polymers.

[0204] From the viewpoint of softness and toughness, the preferred materials are polyethylene terephthalate, polybutylene terephthalate, polyethylene naphthalate, polypropylene, polycarbonate, polyamide, polyimide, polyamide-imide, polyphenylene ether, polyphenylene sulfide, polyarylate, and polysulfone.

[0205] Furthermore, from the viewpoint of improving the transmittance of active light used for exposure and reducing the sidewall roughness of the core pattern, a highly transparent support film is preferred. It should be noted that, from the viewpoint of improving peelability from the resin layer, films that have undergone release treatment using organosilicon compounds, fluorine-containing compounds, etc., can be used as needed.

[0206] The thickness of the support membrane can be appropriately varied according to the target flexibility, and is preferably 3μm to 250μm. If it is greater than or equal to 3μm, the membrane strength is sufficient, and if it is less than or equal to 250μm, sufficient flexibility can be obtained. From the above point of view, the thickness of the support membrane is more preferably 5μm to 200μm, and even more preferably 7μm to 150μm.

[0207] A photosensitive resin film, manufactured by coating a support film with a photosensitive resin varnish or a photosensitive resin composition, can be made into a three-layer structure consisting of a support film, a resin layer, and a protective film by attaching a protective film to the resin layer as needed. There are no particular limitations on the protective film; from the viewpoint of flexibility and toughness, polyesters such as polyethylene terephthalate, polybutylene terephthalate, and polyethylene naphthalate, and polyolefins such as polyethylene and polypropylene are preferred. It should be noted that, from the viewpoint of improving peelability from the resin layer, films that have undergone release treatment using organosilicon compounds, fluorine-containing compounds, etc., can be used as needed. The thickness of the protective film can be appropriately varied according to the target flexibility, preferably 10 μm to 250 μm. If it is greater than or equal to 10 μm, the film strength is sufficient; if it is less than or equal to 250 μm, sufficient flexibility can be obtained. From the above viewpoints, the thickness of the protective film is more preferably 15 μm to 200 μm, and even more preferably 20 μm to 150 μm.

[0208] Alternatively, in this disclosure, a substrate having multiple insulating layers on the first wiring can be prepared, and the prepared substrate can be subjected to processes such as exposure.

[0209] The above description illustrates embodiments of this disclosure, but these embodiments are merely examples and can be implemented with various modifications without departing from the spirit of the subject. Furthermore, the scope of this disclosure is not limited to these embodiments.

[0210] Regarding the above implementation methods, the following notes are further disclosed.

[0211] (Postscript 1)

[0212] A method for manufacturing an optoelectronic composite wiring board, comprising:

[0213] The process of forming an insulating layer with multiple layers of different materials on a substrate having a first wiring layer;

[0214] The process of exposing at least one layer of the insulating layer to form an optical waveguide;

[0215] The process of forming through holes in the insulating layer; and

[0216] The process of forming a second wiring layer on the insulating layer and forming a through-hole conductor connecting the first wiring layer and the second wiring layer in the through-hole.

[0217] (Postscript 2)

[0218] According to the manufacturing method of the optoelectronic composite wiring board described in Appendix 1, the layer forming the optical waveguide among the plurality of layers contains a material whose refractive index is modulated by exposure.

[0219] (Note 3)

[0220] According to the manufacturing method of the optoelectronic composite wiring board described in Appendix 2, the layer forming the optical waveguide contains a material whose refractive index increases upon exposure to light with wavelengths of 10 nm to 450 nm.

[0221] (Note 4)

[0222] According to the manufacturing method of the optoelectronic composite wiring board described in Appendix 2, the layer forming the optical waveguide contains a material whose refractive index decreases upon exposure to light with wavelengths of 10 nm to 450 nm.

[0223] (Note 5)

[0224] According to the manufacturing method of the optoelectronic composite wiring board according to any one of Appendix 1 to Appendix 4, at least one layer of the insulating layer comprises a thermosetting resin.

[0225] (Note 6)

[0226] According to the manufacturing method of the optoelectronic composite wiring board according to any one of Appendix 1 to Appendix 5, the plurality of layers in the insulating layer are formed by stacking them layer by layer on the substrate.

[0227] (Note 7)

[0228] According to the manufacturing method of the optoelectronic composite wiring board according to any one of Appendix 1 to Appendix 6, at least one layer of the insulating layer is formed of a liquid resin material.

[0229] (Postscript 8)

[0230] According to the manufacturing method of the optoelectronic composite wiring board according to any one of Appendix 1 to Appendix 7, at least one layer of the insulating layer is formed of a film-like resin material.

[0231] (Note 9)

[0232] According to the manufacturing method of the optoelectronic composite wiring board according to any one of Appendix 1 to Appendix 8, the insulating layer is formed by mounting a laminate of the plurality of layers on the substrate.

[0233] (Postscript 10)

[0234] According to the manufacturing method of the optoelectronic composite wiring board described in Appendix 9, the laminate is formed by stacking the layers made of film-like resin material.

[0235] (Postscript 11)

[0236] According to the manufacturing method of the optoelectronic composite wiring board described in Appendix 1, the insulating layer is formed by stacking three layers, and the layer forming the optical waveguide is located in the middle of the three layers.

[0237] (Postscript 12)

[0238] A method for manufacturing an optoelectronic composite wiring board, comprising:

[0239] The process of forming a first insulating layer on a substrate having a first wiring layer;

[0240] The process of forming a first through hole on the first insulating layer;

[0241] The process of forming a second wiring layer on the first insulating layer and forming a first through-hole conductor connecting the first wiring layer and the second wiring layer in the first through-hole;

[0242] The process of forming a second insulating layer on the second wiring layer with a material different from that of the first insulating layer;

[0243] The process of exposing the second insulating layer to form an optical waveguide;

[0244] The process of forming a second through-hole on the second insulating layer; and

[0245] The process of forming a third wiring layer on the second insulating layer and forming a second through-hole conductor connecting the second wiring layer and the third wiring layer in the second through-hole.

[0246] (Postscript 13)

[0247] According to the manufacturing method of the optoelectronic composite wiring board described in Appendix 12, the second insulating layer comprises a substance whose refractive index is modulated by exposure.

[0248] (Postscript 14)

[0249] According to the manufacturing method of the optoelectronic composite wiring board described in Appendix 13, the second insulating layer comprises a material whose refractive index increases upon exposure to light with wavelengths of 10 nm to 450 nm.

[0250] (Postscript 15)

[0251] According to the manufacturing method of the optoelectronic composite wiring board described in Appendix 13, the second insulating layer comprises a material whose refractive index decreases upon exposure to light with wavelengths of 10 nm to 450 nm.

[0252] (Postscript 16)

[0253] According to any one of Appendix 12 to Appendix 15, in the method of manufacturing the optoelectronic composite wiring board, the first insulating layer and the second insulating layer comprise a thermosetting resin.

[0254] (Postscript 17)

[0255] According to any one of Appendix 12 to Appendix 16, in the method of manufacturing the optoelectronic composite wiring board, at least one of the first insulating layer and the second insulating layer is formed of a liquid resin material.

[0256] (Postscript 18)

[0257] According to any one of Appendix 12 to Appendix 17, in the method of manufacturing the optoelectronic composite wiring board, at least one of the first insulating layer and the second insulating layer is formed of a film-like resin material.

[0258] (Postscript 19)

[0259] According to any one of Appendix 12 to Appendix 18, in the method of manufacturing an optoelectronic composite wiring board, the first through-hole conductor and the second through-hole conductor overlap in the stacking direction of the first insulating layer and the second insulating layer.

[0260] (Postscript 20)

[0261] According to the manufacturing method of the optoelectronic composite wiring board described in Appendix 19, it has the following characteristics:

[0262] The process of forming a third insulating layer on the third wiring layer with a material different from that of the second insulating layer;

[0263] The process of forming a third through-hole on the third insulating layer; and

[0264] The process of forming a fourth wiring layer on the third insulating layer and forming a third through-hole conductor connecting the third wiring layer and the fourth wiring layer within the third through-hole.

[0265] The second through-hole conductor and the third through-hole conductor overlap in the stacking direction of the second insulating layer and the third insulating layer.

[0266] (Postscript 21)

[0267] A method for manufacturing an optoelectronic composite wiring board, comprising:

[0268] The process of stacking multiple layers of different materials on a substrate having a first wiring layer, and exposing and developing one of the multiple layers to form an optical waveguide;

[0269] The process of forming through-holes in an insulating layer formed by stacking the plurality of layers; and

[0270] The process of forming a second wiring layer on the insulating layer and forming a through-hole conductor connecting the first wiring layer and the second wiring layer in the through-hole.

[0271] (Postscript 22)

[0272] According to the manufacturing method of the optoelectronic composite wiring board described in Appendix 21, the layer forming the optical waveguide comprises a photosensitive material and a thermosetting resin.

[0273] (Postscript 23)

[0274] According to the manufacturing method of the optoelectronic composite wiring board described in Appendix 21, the layer forming the optical waveguide comprises a negative or positive photosensitive material and a thermosetting resin.

[0275] (Postscript 24)

[0276] According to the manufacturing method of the optoelectronic composite wiring board described in Appendix 21, the insulating layer is formed by stacking three layers, with the layer forming the optical waveguide located in the middle of the three layers.

[0277] (Postscript 25)

[0278] According to the manufacturing method of the optoelectronic composite wiring board described in Appendix 21, multiple layers of different materials are stacked on the substrate, the topmost layer is exposed and developed to form an optical waveguide, and other layers are stacked on the optical waveguide to form the insulating layer.

[0279] (Postscript 26)

[0280] According to the manufacturing method of the optoelectronic composite wiring board according to any one of Appendix 21 to Appendix 24, the plurality of layers in the insulating layer are formed by stacking them layer by layer on the substrate.

[0281] (Postscript 27)

[0282] According to any one of Appendix 21 to Appendix 26, in the method of manufacturing the optoelectronic composite wiring board, at least one of the plurality of layers of different materials is formed of a liquid resin material.

[0283] (Postscript 28)

[0284] According to any one of Appendix 21 to Appendix 26, in the method of manufacturing the optoelectronic composite wiring board, at least one of the multiple layers of different materials is formed of a film-like resin material.

[0285] (Postscript 29)

[0286] A method for manufacturing an optoelectronic composite wiring board, comprising:

[0287] The process of forming a first insulating layer on a substrate having a first wiring layer;

[0288] The process of forming a first through hole on the first insulating layer;

[0289] The process of forming a second wiring layer on the first insulating layer and forming a first through-hole conductor connecting the first wiring layer and the second wiring layer in the first through-hole;

[0290] The process of forming a second insulating layer on the second wiring layer with a material different from that of the first insulating layer;

[0291] The process of exposing and developing the second insulating layer to form an optical waveguide;

[0292] The process of forming a third insulating layer on the second insulating layer, the third insulating layer being made of a material different from the second insulating layer;

[0293] The process of forming a second through-hole on the third insulating layer; and

[0294] The process of forming a third wiring layer on the third insulating layer and forming a second through-hole conductor connecting the second wiring layer and the third wiring layer in the second through-hole.

[0295] (Postscript 30)

[0296] According to the manufacturing method of the optoelectronic composite wiring board described in Appendix 29, the second insulating layer comprises a photosensitive material and a thermosetting resin.

[0297] (Postscript 31)

[0298] According to the manufacturing method of the optoelectronic composite wiring board described in Appendix 29, the second insulating layer comprises a negative or positive photosensitive material and a thermosetting resin.

[0299] (Postscript 32)

[0300] According to any one of Appendix 29 to Appendix 31, in the method of manufacturing an optoelectronic composite wiring board, the first through-hole conductor and the second through-hole conductor overlap in the stacking direction of the first insulating layer and the second insulating layer.

[0301] (Postscript 33)

[0302] According to any one of Appendix 29 to Appendix 32, in the method of manufacturing the optoelectronic composite wiring board, at least one of the first insulating layer and the second insulating layer is formed of a liquid resin material.

[0303] (Postscript 34)

[0304] According to any one of Appendix 29 to Appendix 32, in the method of manufacturing the optoelectronic composite wiring board, at least one of the first insulating layer and the second insulating layer is formed of a film-like resin material.

[0305] (Postscript 35)

[0306] A method for manufacturing an optoelectronic composite wiring board, comprising:

[0307] The process of forming a first covering layer on the first surface, the second surface and the inner wall surface of the through hole of a substrate having a first surface, a second surface opposite to the first surface, through holes opening on the first surface and the second surface respectively, and a first wiring layer formed on the first surface;

[0308] The process of forming a core layer on the first covering layer on the first surface and the second surface, and forming the core layer between the first covering layers on the inner wall surface;

[0309] The process of forming a second coating layer on the core layer in the first and second surfaces respectively;

[0310] The process of exposing the core layer to form an optical waveguide;

[0311] The process of forming a through-hole in a first insulating layer composed of the first covering layer, the second covering layer, and the core layer on the first surface; and

[0312] The process of forming a second wiring layer on the first insulating layer and forming a through-hole conductor within the through-hole to electrically connect the first wiring layer and the second wiring layer.

[0313] (Postscript 36)

[0314] According to the manufacturing method of the optoelectronic composite wiring board described in Appendix 35, at least one of the first covering layer, the core layer, and the second covering layer is formed of a liquid resin material.

[0315] (Postscript 37)

[0316] According to the manufacturing method of the optoelectronic composite wiring board described in Appendix 35, at least one of the first covering layer, the core layer, and the second covering layer is formed of a film-like resin material.

[0317] (Postscript 38)

[0318] According to any one of Appendix 35 to Appendix 37, in the method of manufacturing an optoelectronic composite wiring board, the core layer comprises a material whose refractive index is modulated by exposure.

[0319] (Postscript 39)

[0320] A method for manufacturing an optoelectronic composite wiring board, comprising:

[0321] The process of forming a first covering layer on the first surface, the second surface and the inner wall surface of the through hole of a substrate having a first surface, a second surface opposite to the first surface, through holes opening on the first surface and the second surface respectively, and a first wiring layer formed on the first surface;

[0322] A core layer is formed on the first covering layer on the first surface and the second surface, and the core layer is formed between the first covering layers on the inner wall surface;

[0323] The core layer is exposed and developed to form an optical waveguide;

[0324] A second covering layer is formed on the first covering layer on the first surface and the second surface in a manner that covers the core layer;

[0325] A through-hole is formed in a first insulating layer composed of the first covering layer, the second covering layer, and the core layer on the first surface; and

[0326] The process of forming a second wiring layer on the first insulating layer and forming a through-hole conductor within the through-hole to electrically connect the first wiring layer and the second wiring layer.

[0327] (Postscript 40)

[0328] According to the manufacturing method of the optoelectronic composite wiring board described in Appendix 39, at least one of the first covering layer, the core layer, and the second covering layer is formed of a liquid resin material.

[0329] (Postscript 41)

[0330] According to the manufacturing method of the optoelectronic composite wiring board described in Appendix 39, at least one of the first covering layer, the core layer, and the second covering layer is formed of a film-like resin material.

[0331] (Postscript 42)

[0332] According to any one of Appendix 39 to Appendix 41, in the method of manufacturing the optoelectronic composite wiring board, the core layer comprises a negative or positive photosensitive material and a thermosetting resin.

[0333] (Postscript 43)

[0334] An optoelectronic composite wiring board is formed using the manufacturing method of any one of Appendix 1 to Appendix 11.

[0335] (Postscript 44)

[0336] An optoelectronic composite wiring board, which has the following features:

[0337] A substrate having a first wiring layer;

[0338] An insulating layer is formed on the substrate and has multiple layers of different materials and through holes;

[0339] An optical waveguide is formed on the insulating layer;

[0340] A second wiring layer is formed on the insulating layer; and

[0341] A through-hole conductor is formed within the through-hole to connect the first wiring layer and the second wiring layer.

[0342] (Postscript 45)

[0343] An optoelectronic composite wiring board is formed using the manufacturing method of any one of Appendices 12 to 20.

[0344] (Postscript 46)

[0345] An optoelectronic composite wiring board, which has the following features:

[0346] A substrate having a first wiring layer;

[0347] A first insulating layer is formed on the substrate and has a first through-hole;

[0348] A second wiring layer is formed on the first insulating layer;

[0349] A first through-hole conductor is formed in the first through-hole to connect the first wiring layer and the second wiring layer;

[0350] A second insulating layer is formed on the second wiring layer and has a second through-hole;

[0351] An optical waveguide is formed on the second insulating layer;

[0352] A third wiring layer is formed on the second insulating layer; and

[0353] A second via conductor is formed within the second via, connecting the second wiring layer and the third wiring layer.

[0354] (Postscript 47)

[0355] According to the optoelectronic composite wiring board described in Appendix 46, the first through-hole conductor and the second through-hole conductor overlap in the stacking direction of the first insulating layer and the second insulating layer.

[0356] (Postscript 48)

[0357] According to Appendix 46, the optoelectronic composite wiring board has the following characteristics:

[0358] A third insulating layer is formed on the third wiring layer and has a third through-hole;

[0359] A fourth wiring layer is formed on the third insulating layer; and

[0360] A third via conductor is formed within the third via, connecting the third wiring layer and the fourth wiring layer.

[0361] The second through-hole conductor and the third through-hole conductor overlap in the stacking direction of the second insulating layer and the third insulating layer.

[0362] (Postscript 49)

[0363] An optoelectronic composite wiring board is formed using the manufacturing method of any one of Appendices 21 to 28.

[0364] (Postscript 50)

[0365] An optoelectronic composite wiring board is formed using the manufacturing method of any one of Appendix 29 to Appendix 34.

[0366] (Postscript 51)

[0367] An optoelectronic composite wiring board, which has the following features:

[0368] A substrate having a first surface, a second surface opposite to the first surface, through holes opening on the first surface and the second surface respectively, and a first wiring layer formed on the first surface;

[0369] A first insulating layer is formed on the first surface of the substrate and has a via.

[0370] A second wiring layer is formed on the first insulating layer;

[0371] A through-hole conductor that electrically connects the first wiring layer to the second wiring layer;

[0372] A first optical waveguide is formed on the first insulating layer;

[0373] A second insulating layer is formed on the second surface of the substrate;

[0374] A second optical waveguide, formed on the second insulating layer; and

[0375] The third optical waveguide optically connects the first optical waveguide and the second optical waveguide formed within the through-hole.

[0376] (Postscript 52)

[0377] A semiconductor package having:

[0378] The optoelectronic composite wiring board described in Appendix 43 or Appendix 44;

[0379] An optical circuit chip, which is connected to the optical waveguide of the optoelectronic composite wiring board; and

[0380] An electronic circuit chip is disposed on the second wiring layer of the optoelectronic composite wiring board.

[0381] (Postscript 53)

[0382] A semiconductor package having:

[0383] The optoelectronic composite wiring board described in Appendix 48;

[0384] An optical circuit chip, which is connected to the optical waveguide of the optoelectronic composite wiring board; and

[0385] An electronic circuit chip is disposed on the fourth wiring layer of the optoelectronic composite wiring board.

[0386] (Postscript 54)

[0387] A semiconductor package having:

[0388] The optoelectronic composite wiring board described in Appendix 49;

[0389] An optical circuit chip, which is connected to the optical waveguide of the optoelectronic composite wiring board; and

[0390] An electronic circuit chip is disposed on the second wiring layer of the optoelectronic composite wiring board.

[0391] (Postscript 55)

[0392] A semiconductor package having:

[0393] The optoelectronic composite wiring board described in Appendix 50;

[0394] An optical circuit chip, which is connected to the optical waveguide of the optoelectronic composite wiring board; and

[0395] An electronic circuit chip is disposed on the third wiring layer of the optoelectronic composite wiring board.

[0396] (Postscript 56)

[0397] A semiconductor package having:

[0398] The optoelectronic composite wiring board described in Appendix 51;

[0399] An optical circuit chip, which is optically connected to the first optical waveguide of the optoelectronic composite wiring board; and

[0400] An electronic circuit chip is electrically connected to the second wiring layer of the optoelectronic composite wiring board.

[0401] (Postscript 57)

[0402] A laminated film having:

[0403] A laminate having a first resin layer and a second resin layer, the first resin layer containing a substance whose refractive index is modulated by light irradiation, and the second resin layer formed on both sides of the first resin layer, having a different refractive index than the first resin layer; and

[0404] A protective film is disposed on both sides of the laminate and protects both sides respectively.

[0405] (Postscript 58)

[0406] According to Appendix 57, the first resin layer of the laminated film comprises a thermosetting resin.

[0407] (Postscript 59)

[0408] According to the laminated film described in Appendix 58, the substance contained in the first resin layer is a substance whose refractive index increases upon light irradiation.

[0409] (Postscript 60)

[0410] According to the laminated film described in Appendix 58, the substance contained in the first resin layer is a substance whose refractive index is reduced by light irradiation.

[0411] (Postscript 61)

[0412] According to any one of Appendix 57 to Appendix 60, the second resin layer comprises a thermosetting resin.

[0413] Explanation of reference numerals in the attached figures

[0414] 20, 21, 22, 23, 24, 25, 26: Semiconductor package; 30: Optoelectronic composite wiring board; 32: Substrate; 32A: Through-hole; 33: Wiring layer; 34: Insulating layer; 36: Optical waveguide; 38: Wiring layer; 40: Through-hole conductor; 42: Light guide; 42A: Guide body; 42B: Mirror; 44: Optical connector; 50: Optical circuit chip; 52: Light inlet; 54: Chip electrode; 60: Electronic circuit chip; 62: Chip electrode; 70: First layer; 72: Second layer; 74: Third layer; 76: Through-hole; 78: Through-hole conductor; 78A: Seed layer; 78B: Electroplating layer; 130: Optoelectronic composite wiring board; 136: Optical waveguide; 170: First layer; 172: Second layer; 174: Third layer; 176: Through-hole; 177: Through-hole; 178: Through-hole; 1 80: Through-hole conductor, 182: Through-hole conductor, 184: Through-hole conductor, 190: Wiring layer, 192: Wiring layer, 194: Wiring layer, 230: Optoelectronic composite wiring board, 236: Optical waveguide, 270: First layer, 272: Second layer, 274: Resin layer, 276: Through-hole, 280: Through-hole conductor, 290: Wiring layer, 330: Optoelectronic composite wiring board, 336: Optical waveguide, 370: First layer, 372: Second layer, 374: Resin layer, 376: Through-hole, 377: Through-hole, 380: Through-hole conductor, 382: Through-hole conductor, 390: Wiring layer, 392: Wiring layer, F1: Resin material, F2: Resin material, L1: Resin material, L2: Resin material, M1: Mask material, P: Protective material, R1: Resist material, SF1: Multilayer film, SF2: Multilayer film.

Claims

1. A method for manufacturing an optoelectronic composite wiring board, comprising: The process of stacking multiple layers of different materials on a substrate having a first wiring layer, and exposing and developing one of the multiple layers to form an optical waveguide; The process of forming through holes in an insulating layer formed by stacking the multiple layers; as well as The process of forming a second wiring layer on the insulating layer and forming a through-hole conductor connecting the first wiring layer and the second wiring layer in the through-hole.

2. The method for manufacturing an optoelectronic composite wiring board according to claim 1, wherein the layer forming the optical waveguide comprises a photosensitive material and a thermosetting resin.

3. The method for manufacturing an optoelectronic composite wiring board according to claim 1 or 2, wherein the layer forming the optical waveguide comprises a negative or positive photosensitive material and a thermosetting resin.

4. The method for manufacturing an optoelectronic composite wiring board according to claim 1, wherein the insulating layer is formed by stacking three layers, and the layer forming the optical waveguide is located in the middle of the three layers.

5. The method for manufacturing an optoelectronic composite wiring board according to claim 1, wherein multiple layers of different materials are stacked on the substrate, the uppermost layer is exposed and developed to form an optical waveguide, and other layers are stacked on the optical waveguide to form the insulating layer.

6. The method for manufacturing an optoelectronic composite wiring board according to any one of claims 1 to 4, wherein the plurality of layers in the insulating layer are formed by stacking them layer by layer on the substrate.

7. The method for manufacturing an optoelectronic composite wiring board according to any one of claims 1 to 6, wherein at least one of the plurality of layers of different materials is formed of a liquid resin material.

8. The method for manufacturing an optoelectronic composite wiring board according to any one of claims 1 to 6, wherein at least one of the plurality of layers of different materials is formed of a film-like resin material.

9. A method for manufacturing an optoelectronic composite wiring board, comprising: The process of forming a first insulating layer on a substrate having a first wiring layer; The process of forming a first through hole on the first insulating layer; The process of forming a second wiring layer on the first insulating layer and forming a first through-hole conductor connecting the first wiring layer and the second wiring layer in the first through-hole; The process of forming a second insulating layer on the second wiring layer with a material different from that of the first insulating layer; The process of exposing and developing the second insulating layer to form an optical waveguide; The process of forming a third insulating layer on the second insulating layer, the third insulating layer being made of a material different from the second insulating layer; The process of forming a second through-hole on the third insulating layer; and The process of forming a third wiring layer on the third insulating layer and forming a second through-hole conductor connecting the second wiring layer and the third wiring layer in the second through-hole.

10. The method for manufacturing the optoelectronic composite wiring board according to claim 9, wherein the second insulating layer comprises a photosensitive material and a thermosetting resin.

11. The method for manufacturing an optoelectronic composite wiring board according to claim 9, wherein the second insulating layer comprises a negative or positive photosensitive material and a thermosetting resin.

12. The method for manufacturing an optoelectronic composite wiring board according to any one of claims 9 to 11, wherein the first through-hole conductor and the second through-hole conductor overlap in the stacking direction of the first insulating layer and the second insulating layer.

13. The method for manufacturing an optoelectronic composite wiring board according to any one of claims 9 to 12, wherein at least one of the first insulating layer and the second insulating layer is formed of a liquid resin material.

14. The method for manufacturing an optoelectronic composite wiring board according to any one of claims 9 to 12, wherein at least one of the first insulating layer and the second insulating layer is formed of a film-like resin material.

15. The method for manufacturing an optoelectronic composite wiring board according to claim 1 or 9, wherein the substrate has a first surface, a second surface opposite to the first surface, through holes opening on the first surface and the second surface respectively, and a first wiring layer formed on the first surface. The optical waveguide is formed by exposing and developing the insulating layer disposed within the through hole.

16. An optoelectronic composite wiring board, formed using the manufacturing method of any one of claims 1 to 8 and 15.

17. An optoelectronic composite wiring board, formed using the manufacturing method of the optoelectronic composite wiring board according to any one of claims 9 to 14.

18. A semiconductor package having: The optoelectronic composite wiring board according to claim 16; An optical circuit chip, which is connected to the optical waveguide of the optoelectronic composite wiring board; and An electronic circuit chip is disposed on the second wiring layer of the optoelectronic composite wiring board.

19. A semiconductor package having: The optoelectronic composite wiring board according to claim 17; An optical circuit chip, which is connected to the optical waveguide of the optoelectronic composite wiring board; and An electronic circuit chip is disposed on the third wiring layer of the optoelectronic composite wiring board.

Images